TW202406989A - Polyimide film, manufacturing method of the same, flexible metal foil laminate and electronic components including the same - Google Patents
Polyimide film, manufacturing method of the same, flexible metal foil laminate and electronic components including the same Download PDFInfo
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- TW202406989A TW202406989A TW112127283A TW112127283A TW202406989A TW 202406989 A TW202406989 A TW 202406989A TW 112127283 A TW112127283 A TW 112127283A TW 112127283 A TW112127283 A TW 112127283A TW 202406989 A TW202406989 A TW 202406989A
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- 229920001721 polyimide Polymers 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 title claims description 65
- 239000002184 metal Substances 0.000 title claims description 65
- 239000011888 foil Substances 0.000 title claims description 53
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 46
- 150000004985 diamines Chemical class 0.000 claims description 39
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 claims description 21
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 claims description 15
- 239000004952 Polyamide Substances 0.000 claims description 15
- 229920002647 polyamide Polymers 0.000 claims description 15
- 230000009467 reduction Effects 0.000 claims description 14
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 claims description 12
- BATVGDQMONZKCV-UHFFFAOYSA-N 2-[3-(2-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC=C1OC1=CC=CC(OC=2C(=CC=CC=2)N)=C1 BATVGDQMONZKCV-UHFFFAOYSA-N 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 10
- 229920005575 poly(amic acid) Polymers 0.000 claims description 10
- JVERADGGGBYHNP-UHFFFAOYSA-N 5-phenylbenzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C=2C=CC=CC=2)=C1C(O)=O JVERADGGGBYHNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 claims description 5
- 150000001412 amines Chemical class 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 230000000379 polymerizing effect Effects 0.000 claims description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 3
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 15
- 239000000203 mixture Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 13
- 239000004642 Polyimide Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 10
- 239000000945 filler Substances 0.000 description 10
- -1 diamine compound Chemical class 0.000 description 9
- 239000011889 copper foil Substances 0.000 description 8
- 108010025899 gelatin film Proteins 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical compound CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 5
- 125000003368 amide group Chemical group 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000012024 dehydrating agents Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- BCJIMAHNJOIWKQ-UHFFFAOYSA-N 4-[(1,3-dioxo-2-benzofuran-4-yl)oxy]-2-benzofuran-1,3-dione Chemical compound O=C1OC(=O)C2=C1C=CC=C2OC1=CC=CC2=C1C(=O)OC2=O BCJIMAHNJOIWKQ-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 150000001408 amides Chemical group 0.000 description 4
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 150000008064 anhydrides Chemical class 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- JJYPMNFTHPTTDI-UHFFFAOYSA-N 3-methylaniline Chemical compound CC1=CC=CC(N)=C1 JJYPMNFTHPTTDI-UHFFFAOYSA-N 0.000 description 2
- ITQTTZVARXURQS-UHFFFAOYSA-N 3-methylpyridine Chemical compound CC1=CC=CN=C1 ITQTTZVARXURQS-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 125000006159 dianhydride group Chemical group 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 238000007363 ring formation reaction Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229920006259 thermoplastic polyimide Polymers 0.000 description 2
- GEWWCWZGHNIUBW-UHFFFAOYSA-N 1-(4-nitrophenyl)propan-2-one Chemical compound CC(=O)CC1=CC=C([N+]([O-])=O)C=C1 GEWWCWZGHNIUBW-UHFFFAOYSA-N 0.000 description 1
- ONRSPOWNRLCCGF-UHFFFAOYSA-N 2,2-diphenyloxolane Chemical compound C1CCOC1(C=1C=CC=CC=1)C1=CC=CC=C1 ONRSPOWNRLCCGF-UHFFFAOYSA-N 0.000 description 1
- ISPYQTSUDJAMAB-UHFFFAOYSA-N 2-chlorophenol Chemical compound OC1=CC=CC=C1Cl ISPYQTSUDJAMAB-UHFFFAOYSA-N 0.000 description 1
- AURKDQJEOYBJSQ-UHFFFAOYSA-N 2-hydroxypropanoyl 2-hydroxypropanoate Chemical compound CC(O)C(=O)OC(=O)C(C)O AURKDQJEOYBJSQ-UHFFFAOYSA-N 0.000 description 1
- WXNZTHHGJRFXKQ-UHFFFAOYSA-N 4-chlorophenol Chemical compound OC1=CC=C(Cl)C=C1 WXNZTHHGJRFXKQ-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JLJWIVHYUCBSRC-UHFFFAOYSA-N benzene;9-[fluoren-9-ylidene(phenyl)methyl]fluorene Chemical compound C1=CC=CC=C1.C1=CC=CC=C1C([C]1C2=CC=CC=C2C2=CC=CC=C21)=C1C2=CC=CC=C2C2=CC=CC=C21 JLJWIVHYUCBSRC-UHFFFAOYSA-N 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- FUFJGUQYACFECW-UHFFFAOYSA-L calcium hydrogenphosphate Chemical compound [Ca+2].OP([O-])([O-])=O FUFJGUQYACFECW-UHFFFAOYSA-L 0.000 description 1
- 239000001506 calcium phosphate Substances 0.000 description 1
- 229910000389 calcium phosphate Inorganic materials 0.000 description 1
- 235000011010 calcium phosphates Nutrition 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004427 diamine group Chemical group 0.000 description 1
- 235000019700 dicalcium phosphate Nutrition 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 125000000879 imine group Chemical group 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000009878 intermolecular interaction Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- WYVAMUWZEOHJOQ-UHFFFAOYSA-N propionic anhydride Chemical compound CCC(=O)OC(=O)CC WYVAMUWZEOHJOQ-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Laminated Bodies (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Abstract
Description
本發明係關於尺寸穩定性和附著力均優異的聚醯亞胺膜,更詳細地,係關於一種表面硬度高、常溫附著力及耐熱附著力間的附著力減小實現最小化的聚醯亞胺膜及其製造方法。The present invention relates to a polyimide film that is excellent in both dimensional stability and adhesion. More specifically, it relates to a polyimide film that has high surface hardness and minimizes the reduction in adhesion between normal temperature adhesion and heat-resistant adhesion. Amine film and method of making same.
聚醯亞胺(polyimide:PI)以剛性芳族主鏈和化學穩定性非常優異的醯亞胺環為基礎,是有機材料中具有最高水平耐熱性、耐藥品性、電氣絕緣性、耐化學性、耐氣候性的高分子材料。Polyimide (polyimide: PI) is based on a rigid aromatic backbone and an amide ring with excellent chemical stability. It has the highest level of heat resistance, chemical resistance, electrical insulation, and chemical resistance among organic materials. , Weather-resistant polymer materials.
聚醯亞胺膜作為要求前述特性的多種電子設備的材料而倍受矚目。Polyimide films have attracted much attention as materials for various electronic devices requiring the aforementioned properties.
應用聚醯亞胺膜的微電子部件可以例如電路積體化高的可撓性超薄電路基板,以便能夠應對電子製品的輕量化和小型化,聚醯亞胺膜尤其廣泛用作超薄電路基板的絕緣薄膜。Microelectronic components using polyimide films can be, for example, flexible ultra-thin circuit substrates with high circuit integration, so as to cope with the weight reduction and miniaturization of electronic products. Polyimide films are particularly widely used as ultra-thin circuits. Insulating film for substrate.
前述超薄電路基板的結構一般是在絕緣薄膜上形成有包括金屬箔的電路,從廣義而言,將這種超薄電路基板稱為可撓性覆金屬箔層壓板(Flexible Metal Foil Clad Laminate),當使用薄銅板作為金屬箔時,從狹義而言,也稱為可撓性覆銅板(Flexible Copper Clad Laminate:FCCL)。The structure of the aforementioned ultra-thin circuit substrate is generally a circuit including metal foil formed on an insulating film. Broadly speaking, this ultra-thin circuit substrate is called a flexible metal foil clad laminate (Flexible Metal Foil Clad Laminate). , when a thin copper plate is used as the metal foil, in a narrow sense, it is also called Flexible Copper Clad Laminate (FCCL).
作為可撓性覆金屬箔層壓板的製造方法,可以例如:(i)在金屬箔上澆鑄(casting)或塗覆作為聚醯亞胺前驅物的聚醯胺酸後進行醯亞胺化的鑄造法;(ii)藉由濺射(Sputtering)而在聚醯亞胺薄膜上直接設置金屬層的金屬化法;以及(iii)藉由熱可塑性聚醯亞胺而利用熱和壓力使聚醯亞胺薄膜與金屬箔接合的層壓法。As a method of manufacturing a flexible metal foil-clad laminate, for example: (i) casting on a metal foil or casting in which polyamide acid, which is a polyimide precursor, is coated and then imidized. method; (ii) metallization method of directly setting a metal layer on a polyimide film by sputtering; and (iii) thermoplastic polyimide using heat and pressure to make the polyimide Lamination method of joining amine film to metal foil.
特別是金屬化法,例如是在20 μm至38 μm厚度的聚醯亞胺薄膜上濺射銅等金屬而依次沉積黏接(Tie)層、種子(Seed)層,從而生產可撓性覆金屬箔層壓板的方法,在形成電路圖案的節距(pitch)為35 μm以下的超微電路方面具有優勢,正廣泛用於製造用於COF(chip on film:薄膜覆晶)的可撓性覆金屬箔層壓板。Especially the metallization method, for example, sputtering copper and other metals on a polyimide film with a thickness of 20 μm to 38 μm to sequentially deposit a tie layer and a seed layer to produce flexible metal coating. The foil laminate method has advantages in forming ultra-micro circuits with a circuit pattern pitch of 35 μm or less, and is being widely used to manufacture flexible coatings for COF (chip on film). Metal foil laminate.
基於金屬化法的可撓性覆金屬箔層壓板中使用的聚醯亞胺膜需具有高尺寸穩定性和與濺射(sputter)金屬箔的附著力。但是,尺寸穩定性高的聚醯亞胺膜通常具有與濺射金屬箔的附著力低下的問題。Polyimide films used in flexible metal foil laminates based on metallization require high dimensional stability and adhesion to sputtered metal foils. However, polyimide films with high dimensional stability generally have a problem of low adhesion to sputtered metal foils.
因此,迫切要求一種同時具有尺寸穩定性和與濺射金屬箔的優異附著力的聚醯亞胺膜。Therefore, there is an urgent demand for a polyimide film that has both dimensional stability and excellent adhesion to sputtered metal foil.
特別是需要使濺射製程及後續製程中的聚醯亞胺膜尺寸變化導致的與濺射金屬箔的附著力減小實現最小化。In particular, it is necessary to minimize the reduction in adhesion to the sputtered metal foil caused by dimensional changes in the polyimide film during the sputtering process and subsequent processes.
以上背景技術中記載的事項用於幫助對發明背景的理解,可包括並非該技術領域的一般技藝人士已知的以往技術的事項。The matters described in the background art above are intended to assist in understanding the background of the invention, and may include matters that are not prior art known to those of ordinary skill in the technical field.
[先前技術文獻] [專利文獻] 專利文獻1 :韓國公開專利公報第10-2020-0120515號。 [Prior technical literature] [Patent Document] Patent Document 1: Korean Patent Publication No. 10-2020-0120515.
[技術課題][Technical Issue]
因此,本發明的目的在於提供一種同時具有高尺寸穩定性和優異附著力的聚醯亞胺膜。Therefore, the object of the present invention is to provide a polyimide film having both high dimensional stability and excellent adhesion.
特別是目的在於提供一種表面硬度優異、使濺射製程及後續製程中與濺射金屬箔附著力減小實現最小化的聚醯亞胺膜。In particular, the purpose is to provide a polyimide film that has excellent surface hardness and minimizes the reduction in adhesion to the sputtered metal foil during the sputtering process and subsequent processes.
但是,本發明要解決的課題不限於以上提及的課題,未提及的其他課題是從業人員可以從以下記載明確理解的。 [技術方案] However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description. [Technical solution]
為實現如上所述目的,本發明一個態樣提供一種聚醯亞胺膜,其中,In order to achieve the above object, one aspect of the present invention provides a polyimide film, wherein,
以奈米壓痕儀(nanoindenter)測量的表面硬度(hardness)為0.4 GPa以上、0.6 GPa以下。The surface hardness (hardness) measured with a nanoindenter is 0.4 GPa or more and 0.6 GPa or less.
本發明另一態樣提供一種聚醯亞胺膜的製造方法,包括: (a) 步驟,將二酐成分和二胺成分在有機溶劑中聚合以製造聚醯胺酸,其中,前述二酐成分包括聯苯四甲酸二酐(BDPA)和均苯四甲酸二酐(PMDA),前述二胺成分包括選自由對苯二胺(PPD)、二胺基二苯醚(ODA)和1,3-雙(胺基苯氧基)苯(TPE-R)構成的組的兩種以上;及 (b) 步驟,使前述聚醯胺酸進行醯亞胺化。 Another aspect of the present invention provides a method for manufacturing a polyimide film, which includes: (a) step, polymerizing a dianhydride component and a diamine component in an organic solvent to produce polyamic acid, wherein the aforementioned dianhydride component includes diphenyltetracarboxylic dianhydride (BDPA) and pyromellitic dianhydride (PMDA) ), the aforementioned diamine component includes two selected from the group consisting of p-phenylenediamine (PPD), diaminodiphenyl ether (ODA) and 1,3-bis(aminophenoxy)benzene (TPE-R). more than one species; and (b) Step: imidizing the aforementioned polyamide acid.
本發明又一態樣提供一種包括前述聚醯亞胺膜和導電性金屬箔的可撓性金屬箔層壓板。Another aspect of the present invention provides a flexible metal foil laminate including the aforementioned polyimide film and conductive metal foil.
本發明又一態樣提供一種包括前述可撓性覆金屬箔層壓板的電子部件。 [發明效果] Yet another aspect of the present invention provides an electronic component including the aforementioned flexible metal foil-clad laminate. [Effects of the invention]
本發明藉由提供調節了二酐和二胺成分的配比、反應比等的聚醯亞胺膜,從而提供尺寸穩定性以及附著力均優異的聚醯亞胺膜。The present invention provides a polyimide film in which the ratio, reaction ratio, etc. of the dianhydride and diamine components are adjusted, thereby providing a polyimide film with excellent dimensional stability and adhesion.
這種聚醯亞胺膜可以應用於要求優異尺寸穩定性和附著力的聚醯亞胺膜的多個領域,例如,可以應用於根據金屬化法製造的可撓性覆金屬箔層壓板或包括這種可撓性覆金屬箔層壓板的電子部件。This polyimide film can be applied to various fields requiring polyimide films with excellent dimensional stability and adhesion. For example, it can be applied to flexible metal foil laminates manufactured according to the metallization method or including This flexible metal foil laminate is used for electronic components.
本說明書和申請專利範圍中使用的術語或詞語不得限定為通常的意義或詞典的意義進行解釋,應立足於「發明人為了以最佳方法描述其自身的發明而可以適當地定義術語的概念」的原則,只解釋為符合本發明的技術思想的意義和概念。The terms or words used in this specification and the scope of the patent application shall not be limited to the common meaning or dictionary meaning, but shall be based on the concept that "the inventor can appropriately define the terms in order to describe his own invention in the best way." principles shall only be interpreted as meanings and concepts consistent with the technical ideas of the present invention.
因此,本說明書中記載的實施例的構成只不過是本發明最佳的一個實施例,並不全部代表本發明的技術思想,因此應理解為在本申請時間點會存在可以替代其多樣均等物和變形例。Therefore, the configuration of the embodiments described in this specification is only one of the best embodiments of the present invention, and does not all represent the technical ideas of the present invention. Therefore, it should be understood that there will be various equivalents that can replace it at the time of this application. and modifications.
只要上下文未明確表示不同,本說明書中單數的表達包括複數的表達。在本說明書中,「包括」、「具備」或「具有」等術語是要指定實施的特徵、數字、步驟、構成要素或其組合的存在,應理解為不預先排除一個或其以上的其他特徵或數字、步驟、構成要素或其組合的存在或附加可能性。In this specification, singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "including", "having" or "having" are intended to specify the presence of features, numbers, steps, components or combinations thereof, and should be understood as not excluding one or more other features in advance. or the existence or additional possibility of numbers, steps, components, or combinations thereof.
在本說明書中,「二酐」意指包括其前驅物或衍生物,其在技術上可能不是二酐,但儘管如此,仍與二胺反應而形成聚醯胺酸,該聚醯胺酸可以再次變換成聚醯亞胺。In this specification, "dianhydride" is meant to include its precursors or derivatives, which may not technically be dianhydrides, but nevertheless react with diamines to form polyamides that can Convert to polyimide again.
在本說明書中,「二胺」意指包括其前驅物或衍生物,其在技術上可不是二胺,但儘管如此,仍與二酐反應而形成聚醯胺酸,該聚醯胺酸可以再次變換成聚醯亞胺。In this specification, "diamine" is meant to include its precursors or derivatives, which may not technically be diamines, but nevertheless react with dianhydrides to form polyamides, which may Convert to polyimide again.
在本說明書中,當藉由列舉範圍、較佳範圍或較佳上限值和較佳下限值而給出量、濃度或其他值或參數時,無論範圍是否另行公開,應理解為具體公開了由任意一對的任意範圍上限值或較佳值和任意範圍下限值或較佳值形成的所有範圍。In this specification, when an amount, concentration or other value or parameter is given by enumerating a range, a preferred range, or a preferred upper limit and a preferred lower limit, whether or not the range is otherwise disclosed, it should be understood that the specific disclosure is All ranges formed by any pair of the upper limit of any range or better value and the lower limit of any range or better value.
在本說明書中提及數值的範圍時,只要未不同地敘述,其範圍意指包括其端點及其範圍內的所有整數和分數。意指本發明的範疇不限定於定義範圍時提及的特定值。Where reference is made in this specification to a range of values, unless otherwise stated, the range is meant to include its endpoints and all integers and fractions within the range. It is intended that the scope of the invention is not limited to the specific values mentioned in defining the range.
在本說明書中,表示數值範圍的「a至b」和「a~b」中的「至」和「~」定義為≥a且≤b。In this specification, "to" and "~" in "a to b" and "a~b" indicating numerical ranges are defined as ≥a and ≤b.
本發明一實現例的聚醯亞胺膜以奈米壓痕儀(nanoindenter)測量的表面硬度(hardness)可為0.4 GPa以上、0.6 GPa以下。The surface hardness (hardness) measured by a nanoindenter of the polyimide film according to an embodiment of the present invention can be between 0.4 GPa and 0.6 GPa.
例如,前述表面硬度可為0.45 GPa以上、0.5 GPa以上、0.55 Gpa以上。For example, the aforementioned surface hardness may be 0.45 GPa or more, 0.5 GPa or more, or 0.55 GPa or more.
若超過前述表面硬度範圍,則金屬箔難以沉積,前述聚醯亞胺膜的常溫附著力會弱化,若低於前述表面硬度範圍,則前述聚醯亞胺膜的熱穩定性和耐熱附著力會低下。If it exceeds the aforementioned surface hardness range, it will be difficult to deposit the metal foil, and the normal temperature adhesion of the aforementioned polyimide film will be weakened. If it is lower than the aforementioned surface hardness range, the thermal stability and heat-resistant adhesion of the aforementioned polyimide film will decrease. low.
在一實現例中,前述聚醯亞胺膜與金屬箔的常溫附著力可為0.6 kgf/cm以上、0.9 kgf/cm以下,與金屬箔的耐熱附著力可為0.3 kgf/cm以上、0.5 kgf/cm以下。In an implementation example, the normal temperature adhesion between the polyimide film and the metal foil can be between 0.6 kgf/cm and 0.9 kgf/cm, and the heat-resistant adhesion between the polyimide film and the metal foil can be between 0.3 and 0.5 kgf/cm. /cm below.
前述常溫附著力可為在前述聚醯亞胺膜上藉由濺射製程沉積金屬箔(例如,銅箔)後,在常溫(15~25℃)下測量的前述聚醯亞胺膜與金屬箔的附著力。The aforementioned normal temperature adhesion can be measured at normal temperature (15~25°C) after depositing metal foil (for example, copper foil) on the aforementioned polyimide film through a sputtering process. of adhesion.
另外,前述耐熱附著力可為在前述聚醯亞胺膜上藉由濺射製程沉積金屬箔(例如,銅箔),在高溫(100~200℃)下長時間(100~300小時)放置後測量的前述聚醯亞胺膜與金屬箔的附著力。In addition, the aforementioned heat-resistant adhesion can be obtained by depositing metal foil (for example, copper foil) on the aforementioned polyimide film through a sputtering process, and then leaving it at high temperature (100~200°C) for a long time (100~300 hours). The adhesion of the aforementioned polyimide film to the metal foil was measured.
作為一例,前述常溫附著力可為0.6 kgf/cm以上、0.83 kgf/cm以下,前述耐熱附著力可為0.45 kgf/cm以上、0.50 kgf/cm以下。As an example, the normal temperature adhesion force may be 0.6 kgf/cm or more and 0.83 kgf/cm or less, and the heat-resistant adhesion force may be 0.45 kgf/cm or more and 0.50 kgf/cm or less.
若超過或低於前述常溫和/或耐熱附著力範圍,則在前述聚醯亞胺膜所應用的製品的生產製程中會發生問題。If it exceeds or falls below the aforementioned normal temperature and/or heat-resistant adhesion range, problems may occur in the production process of products to which the aforementioned polyimide film is applied.
在一實現例中,以下述數學式1表示的附著力減小率可為50%以下,熱膨脹係數可以大於1 ppm/℃、小於等於15 ppm/℃。In an implementation example, the adhesion reduction rate expressed by the following mathematical formula 1 may be less than 50%, and the thermal expansion coefficient may be greater than 1 ppm/℃ and less than or equal to 15 ppm/℃.
[數學式1] 附著力減小率(%)=[(與金屬箔的常溫附著力-與金屬箔的耐熱附著力)/與金屬箔的常溫附著力]*100 [Mathematical formula 1] Adhesion reduction rate (%) = [(room-temperature adhesion to metal foil - heat-resistant adhesion to metal foil)/room-temperature adhesion to metal foil]*100
前述附著力減小率例如可為45%以下、40%以下、35%以下、30%以下、25%以下、20%以下。The adhesion reduction rate may be, for example, 45% or less, 40% or less, 35% or less, 30% or less, 25% or less, or 20% or less.
另一方面,前述熱膨脹係數例如可為4.5 ppm/℃以上、10 ppm/℃以下。On the other hand, the thermal expansion coefficient may be, for example, 4.5 ppm/°C or more and 10 ppm/°C or less.
若超過前述熱膨脹係數範圍,則沉積的金屬箔與聚醯亞胺膜的耐熱穩定性會降低,若低於前述熱膨脹係數範圍,則前述聚醯亞胺膜與金屬箔的常溫附著力會低下。If the coefficient of thermal expansion exceeds the range of the thermal expansion coefficient, the heat resistance stability of the deposited metal foil and polyimide film will be reduced. If it is lower than the range of the coefficient of thermal expansion, the adhesion of the polyimide film and the metal foil at room temperature will be reduced.
在一實現例中,本申請的聚醯亞胺膜可使包含二酐成分和二胺成分的聚醯胺酸溶液發生醯亞胺化反應而得到,其中,前述二酐成分包括聯苯四甲酸二酐(3,3',4,4'-Biphenyltetracarboxylic dianhydride, BPDA)和均苯四甲酸二酐(Pyromellitic dianhydride, PMDA),前述二胺成分包括選自由對苯二胺(PPD)、二胺基二苯醚(ODA)和1,3-雙(胺基苯氧基)苯(TPE-R)構成的組的兩種以上。In an implementation example, the polyimide film of the present application can be obtained by subjecting a polyimide solution containing a dianhydride component and a diamine component to an imidization reaction, wherein the dianhydride component includes biphenyltetracarboxylic acid. Dianhydride (3,3',4,4'-Biphenyltetracarboxylic dianhydride, BPDA) and pyromellitic dianhydride (PMDA), the aforementioned diamine components include p-phenylenediamine (PPD), diamine group Two or more types of the group consisting of diphenyl ether (ODA) and 1,3-bis(aminophenoxy)benzene (TPE-R).
不過,本申請的聚醯亞胺膜的二酐成分可不包含二苯酮四羧酸二酐(3,3',4,4'-Benzophenone tetracarboxylic dianhydride,BTDA)和氧雙鄰苯二甲酸酐(4,4'-Oxydiphthalic anhydride,ODPA)。However, the dianhydride component of the polyimide film of the present application may not include benzophenone tetracarboxylic dianhydride (BTDA) and oxybisphthalic anhydride (BTDA). 4,4'-Oxydiphthalic anhydride, ODPA).
另外,本申請的聚醯亞胺膜的二胺成分可不包含間聯甲苯胺(m-tolidine,MTD)。In addition, the diamine component of the polyimide film of the present application may not include m-tolidine (MTD).
例如,前述聚醯亞胺膜的二胺成分可使用對苯二胺和二胺基二苯醚的組合,或對苯二胺和1,3-雙(胺基苯氧基)苯(TPE-R)的組合。For example, the diamine component of the polyimide film can be a combination of p-phenylenediamine and diaminodiphenyl ether, or p-phenylenediamine and 1,3-bis(aminophenoxy)benzene (TPE- R) combination.
來源於聯苯四甲酸二酐的聚醯亞胺鏈具有被命名為電荷轉移錯合物(CTC:Charge transfer complex)的結構,即,電子供體(electron donnor)與電子受體(electron acceptor)彼此接近配置的規則性直線結構,加強了分子間相互作用(intermolecular interaction)。The polyimide chain derived from diphenyltetracarboxylic dianhydride has a structure named charge transfer complex (CTC), that is, electron donor (electron donnor) and electron acceptor (electron acceptor) Regular linear structures arranged close to each other strengthen intermolecular interactions.
另外,均苯四甲酸二酐是具有相對剛性結構的二酐成分,能夠賦予聚醯亞胺膜適當的彈性,因而較佳。In addition, pyromellitic dianhydride is a dianhydride component with a relatively rigid structure and can impart appropriate elasticity to the polyimide film, so it is preferred.
另一方面,聯苯四甲酸二酐包含與芳族部分相應的2個苯環,相反,均苯四甲酸二酐包含與芳族部分相應的1個苯環。On the other hand, diphenyltetracarboxylic dianhydride contains two benzene rings corresponding to the aromatic moiety, and conversely, pyromellitic dianhydride contains one benzene ring corresponding to the aromatic moiety.
在二酐成分中,均苯四甲酸二酐含量的增加,在以相同分子量為基準時,可以理解為分子內的醯亞胺基增加,這可以理解為在聚醯亞胺高分子鏈上,來源於前述均苯四甲酸二酐的醯亞胺基的比率,比來源於聯苯四羧酸二酐的醯亞胺基相對增加。In the dianhydride component, the increase in the content of pyromellitic dianhydride, based on the same molecular weight, can be understood as an increase in the amide imine groups in the molecule, which can be understood as the increase in the polyimide polymer chain. The ratio of the acyl imine groups derived from the pyromellitic dianhydride is relatively higher than that of the amide imine groups derived from biphenyltetracarboxylic dianhydride.
在一實現例中,以前述二酐成分的總含量100莫耳%為基準,前述聯苯四甲酸二酐的含量可為40莫耳%以上、99莫耳%以下,前述均苯四甲酸二酐的含量可為1莫耳%以上、60莫耳%以下,以前述二胺成分的總含量100莫耳%為基準,前述對苯二胺的含量可為40莫耳%以上、95莫耳%以下,前述二胺基二苯醚的含量可為30莫耳%以下,前述1,3-雙(胺基苯氧基)苯的含量可為60莫耳%以下。In an implementation example, based on the total content of the dianhydride component of 100 mol%, the content of the aforementioned biphenyltetracarboxylic acid dianhydride can be more than 40 mol% and less than 99 mol%, and the aforementioned pyromellitic acid dianhydride can be The content of the anhydride may be 1 mol% or more and 60 mol% or less. Based on the total content of the diamine component of 100 mol%, the content of the p-phenylenediamine may be 40 mol% or more and 95 mol%. % or less, the content of the aforementioned diaminodiphenyl ether may be 30 mol% or less, and the content of the aforementioned 1,3-bis(aminophenoxy)benzene may be 60 mol% or less.
例如,以前述二酐成分的總含量100莫耳%為基準,前述聯苯四甲酸二酐的含量可為50莫耳%以上、97莫耳%以下,前述均苯四甲酸二酐的含量可為3莫耳%以上、50莫耳%以下。For example, based on the total content of the dianhydride component of 100 mol%, the content of the diphenyltetracarboxylic acid dianhydride may be between 50 mol% and 97 mol%, and the content of the pyromellitic acid dianhydride may be It is more than 3 mol% and less than 50 mol%.
另外,以前述二胺成分的總含量100莫耳%為基準,前述對苯二胺的含量可為55莫耳%以上、87莫耳%以下,前述二胺基二苯醚的含量可為13莫耳%以下,前述1,3-雙(胺基苯氧基)苯的含量可為45莫耳%以下。In addition, based on 100 mol% of the total content of the aforementioned diamine components, the content of the aforementioned p-phenylenediamine may be 55 mol% or more and 87 mol% or less, and the content of the aforementioned diaminodiphenyl ether may be 13 mol%. mol% or less, and the content of the aforementioned 1,3-bis(aminophenoxy)benzene may be 45 mol% or less.
前述二酐成分和二胺成分中,若前述對苯二胺、前述均苯四甲酸二酐等短結構單體的含量增加,則會出現前述聚醯亞胺膜表面硬度升高、熱膨脹係數下降的傾向。Among the aforementioned dianhydride components and diamine components, if the content of short structural monomers such as the aforementioned p-phenylenediamine and the aforementioned pyromellitic dianhydride increases, the surface hardness of the aforementioned polyimide film will increase and the thermal expansion coefficient will decrease. tendency.
另一方面,前述二酐成分和二胺成分中,若前述二胺基二苯醚、前述聯苯四甲酸二酐等柔軟結構的單體的含量增加,則會出現前述聚醯亞胺膜的表面硬度下降、熱膨脹係數升高的傾向。On the other hand, if the content of soft-structured monomers such as the diaminodiphenyl ether and the diphenyltetracarboxylic dianhydride in the dianhydride component and the diamine component increases, the polyimide film may deteriorate. The surface hardness tends to decrease and the thermal expansion coefficient increases.
在本發明中,聚醯胺酸的製造例如可以有以下方法等: (1) 方法,將二胺成分全量加入溶劑中,然後添加二酐成分使得與二胺成分實質上達到等莫耳並進行聚合; (2) 方法,將二酐成分全量加入溶劑中,然後添加二胺成分使得與二酐成分實質上達到等莫耳並進行聚合; (3) 方法,將二胺成分中一部分成分加入溶劑中後,相對於反應成分,將二酐成分中一部分成分按約95~105莫耳%的比率混合後,添加剩餘二胺成分,接著添加剩餘二酐成分,使二胺成分和二酐成分實質上達到等莫耳並進行聚合; (4) 方法,將二酐成分加入溶劑中後,相對於反應成分,將二胺化合物中一部分成分按95~105莫耳%比率混合後,添加其他二酐成分,接著添加剩餘二胺成分,使二胺成分和二酐成分實質上達到等莫耳並進行聚合; (5) 方法,在溶劑中使一部分二胺成分與一部分二酐成分反應以使某一者過量,形成第一組合物,在又一溶劑中,使一部分二胺成分與一部分二酐成分反應以使某一者過量,形成第二組合物後,混合第一、第二組合物而完成聚合,此時,該方法在形成第一組合物時,若二胺成分過剩,則在第二組合物中使二酐成分過量,在第一組合物中二酐成分過剩時,則在第二組合物中使二胺成分過量,混合第一、第二組合物,使得他們反應所使用的全體二胺成分和二酐成分實質上達到等莫耳並進行聚合。 In the present invention, polyamide acid can be produced by, for example, the following methods: (1) Method: add the entire amount of the diamine component into the solvent, and then add the dianhydride component to make it substantially equimolar with the diamine component and polymerize; (2) Method: add the entire amount of the dianhydride component into the solvent, and then add the diamine component to make it substantially equimolar with the dianhydride component and polymerize; (3) Method: After adding a part of the diamine component to the solvent, mix a part of the dianhydride component at a ratio of about 95 to 105 mol% relative to the reaction component, then add the remaining diamine component, and then add The remaining dianhydride component is such that the diamine component and the dianhydride component are substantially equimolar and polymerized; (4) Method: After adding the dianhydride component to the solvent, mix a part of the diamine compound at a ratio of 95 to 105 mol% relative to the reaction components, then add the other dianhydride component, and then add the remaining diamine component. The diamine component and the dianhydride component are made to be substantially equimolar and polymerized; (5) A method of reacting a part of a diamine component and a part of a dianhydride component in a solvent so that one of them is in excess to form a first composition, and reacting a part of a diamine component and a part of a dianhydride component in another solvent to form a first composition. After making an excess of one of them to form the second composition, the first and second compositions are mixed to complete the polymerization. At this time, in this method, when forming the first composition, if the diamine component is excessive, then in the second composition When the dianhydride component is excessive in the first composition, the diamine component is excessive in the second composition, and the first and second compositions are mixed so that they react with all the diamines used. The component and the dianhydride component become substantially equimolar and polymerize.
不過,並非前述聚合方法只限定於以上示例,前述聚醯胺酸的製造當然可使用公知的任意方法。However, the polymerization method is not limited to the above examples, and any known method can of course be used for the production of the polyamide.
在一個具體示例中,本發明的聚醯亞胺膜的製造方法可包括: (a) 步驟,將二酐成分和二胺成分在有機溶劑中聚合以製造聚醯胺酸,其中,前述二酐成分包括聯苯四甲酸二酐和均苯四甲酸二酐,前述二胺成分包括選自由對苯二胺(PPD)、二胺基二苯醚(ODA)和1,3-雙(胺基苯氧基)苯(TPE-R)構成的組的兩種以上;及 (b) 步驟,使前述聚醯胺酸進行醯亞胺化。 In a specific example, the manufacturing method of the polyimide film of the present invention may include: (a) step, polymerizing a dianhydride component and a diamine component in an organic solvent to produce polyamic acid, wherein the aforementioned dianhydride component includes diphenyltetracarboxylic dianhydride and pyromellitic acid dianhydride, and the aforementioned diamine component Including two or more selected from the group consisting of p-phenylenediamine (PPD), diaminodiphenyl ether (ODA) and 1,3-bis(aminophenoxy)benzene (TPE-R); and (b) Step: imidizing the aforementioned polyamide acid.
在一實現例中,以前述二酐成分的總含量100莫耳%為基準,前述聯苯四甲酸二酐的含量可為40莫耳%以上、99莫耳%以下,前述均苯四甲酸二酐的含量可為1莫耳%以上、60莫耳%以下,以前述二胺成分的總含量100莫耳%為基準,前述對苯二胺的含量可為40莫耳%以上、95莫耳%以下,前述二胺基二苯醚的含量可為30莫耳%以下,前述1,3-雙(胺基苯氧基)苯的含量可為60莫耳%以下。In an implementation example, based on the total content of the dianhydride component of 100 mol%, the content of the aforementioned biphenyltetracarboxylic acid dianhydride can be more than 40 mol% and less than 99 mol%, and the aforementioned pyromellitic acid dianhydride can be The content of the anhydride may be 1 mol% or more and 60 mol% or less. Based on the total content of the diamine component of 100 mol%, the content of the p-phenylenediamine may be 40 mol% or more and 95 mol%. % or less, the content of the aforementioned diaminodiphenyl ether may be 30 mol% or less, and the content of the aforementioned 1,3-bis(aminophenoxy)benzene may be 60 mol% or less.
另一方面,前述聚醯亞胺膜的以奈米壓痕儀(nanoindenter)測量的表面硬度(hardness)可為0.4 GPa以上、0.6 GPa以下,與金屬箔的常溫附著力可為0.6 kgf/cm以上、0.9 kgf/cm以下,與金屬箔的耐熱附著力可為0.3 kgf/cm以上、0.5 kgf/cm以下。On the other hand, the surface hardness (hardness) of the polyimide film measured with a nanoindenter can be 0.4 GPa or more and 0.6 GPa or less, and the normal temperature adhesion to the metal foil can be 0.6 kgf/cm Above and below 0.9 kgf/cm, the heat-resistant adhesion to metal foil can be above 0.3 kgf/cm and below 0.5 kgf/cm.
在本發明中,可以將如上所述的聚醯胺酸的聚合方法定義為任意(random)聚合方式,藉由如上所述過程製造的本發明的由聚醯胺酸製造的聚醯亞胺膜,由於改善了機械特性、耐熱性和耐化學性的本發明效果,因而可以較佳適用。In the present invention, the polymerization method of polyamic acid as described above can be defined as a random polymerization method. The polyimide film of the present invention made of polyamic acid is produced by the process as described above. , due to the effect of the present invention that improves mechanical properties, heat resistance and chemical resistance, it can be better applied.
另一方面,用於合成聚醯胺酸的溶劑不特別限定,只要是使聚醯胺酸溶解的溶劑,則任何溶劑均可使用,但較佳為醯胺類溶劑。On the other hand, the solvent used for synthesizing polyamic acid is not particularly limited and any solvent can be used as long as it dissolves polyamic acid. However, amide solvents are preferred.
具體地,前述溶劑可為有機極性溶劑,詳細地,可為非質子極性溶劑(aprotic polar solvent),例如,可為選自由N,N-二甲基甲醯胺(DMF)、N,N-二甲基乙醯胺(DMAc)、N-甲基吡咯啶酮(NMP)、對氯苯酚、鄰氯苯酚、γ-丁內酯(GBL)、二甘醇二甲醚(Diglyme)構成的組的一種以上,但並非限定於此,可以根據需要而單獨使用或組合兩種以上使用。Specifically, the aforementioned solvent may be an organic polar solvent. Specifically, it may be an aprotic polar solvent. For example, it may be selected from the group consisting of N,N-dimethylformamide (DMF), N,N- Dimethylacetamide (DMAc), N-methylpyrrolidone (NMP), p-chlorophenol, o-chlorophenol, γ-butyrolactone (GBL), diglyme (Diglyme) One or more types, but are not limited thereto, and may be used alone or in combination of two or more types as needed.
在一個示例中,前述溶劑尤其可以較佳使用N,N-二甲基甲醯胺和N,N-二甲基乙醯胺。In one example, N,N-dimethylformamide and N,N-dimethylacetamide are particularly preferred as the aforementioned solvents.
另外,在聚醯胺酸製造製程中,亦可添加奈米二氧化矽以外的填料以改善滑動性、導熱性、耐電暈性、環硬度等膜的多種特性。添加的填充材料不特別限定,作為較佳示例,可以例如氧化鈦、氧化鋁、氮化矽、氮化硼、磷酸氫鈣、磷酸鈣、雲母等。In addition, in the polyamide manufacturing process, fillers other than nanosilica can also be added to improve various properties of the film such as sliding properties, thermal conductivity, corona resistance, and ring hardness. The added filler material is not particularly limited, and preferred examples include titanium oxide, aluminum oxide, silicon nitride, boron nitride, calcium hydrogen phosphate, calcium phosphate, mica, etc.
填充材料的粒徑不特別限定,可以根據需改性的膜特性和添加的填充材料種類來確定。一般而言,平均粒徑為0.05μm至100μm,較佳為0.1μm至75μm,更佳為0.1μm至50μm,尤其較佳為0.1μm至25μm。The particle size of the filler material is not particularly limited and can be determined according to the characteristics of the membrane to be modified and the type of filler material added. Generally speaking, the average particle diameter is 0.05 μm to 100 μm, preferably 0.1 μm to 75 μm, more preferably 0.1 μm to 50 μm, especially preferably 0.1 μm to 25 μm.
若粒徑低於該範圍,則難以表現出改性效果,若超過該範圍,則存在極大損傷表面性或機械特性大幅下降的情形。If the particle size is less than this range, it is difficult to exhibit the modification effect, and if it exceeds this range, the surface properties may be greatly damaged or the mechanical properties may be greatly reduced.
另外,對於填充材料的添加量也不特別限定,可以根據需改性的膜特性或填充材料粒徑等確定。一般而言,填充材料的添加量相對於聚醯亞胺100重量份,為0.01至100重量份,較佳為0.01至90重量份,更佳為0.02至80重量份。In addition, the amount of filler added is not particularly limited and can be determined based on the characteristics of the membrane to be modified or the particle size of the filler. Generally speaking, the amount of filler added is 0.01 to 100 parts by weight, preferably 0.01 to 90 parts by weight, and more preferably 0.02 to 80 parts by weight relative to 100 parts by weight of polyimide.
若填充材料添加量低於該範圍,則難以表現出填充材料的改性效果,若超過該範圍,則存在薄膜機械特性受到極大損傷的可能性。填充材料的添加方法不特別限定,也可使用公知的任何方法。If the amount of filler added is less than this range, it will be difficult to exhibit the modification effect of the filler. If it exceeds this range, there is a possibility that the mechanical properties of the film will be greatly damaged. The method of adding the filler is not particularly limited, and any known method can be used.
在本發明的製造方法中,聚醯亞胺膜可以根據熱醯亞胺化法和化學醯亞胺化法製造。In the production method of the present invention, the polyimide film can be produced according to the thermal imidization method and the chemical imidization method.
另外,亦可藉由並用熱醯亞胺化法和化學醯亞胺化法的複合醯亞胺化法製造。In addition, it can also be produced by a composite imidization method in which a thermal imidization method and a chemical imidization method are used together.
所謂前述熱醯亞胺化法,是不使用化學催化劑而利用熱風或紅外線乾燥器等熱源來誘導醯亞胺化反應的方法。The aforementioned thermal imidization method is a method in which a heat source such as hot air or an infrared dryer is used to induce an imidization reaction without using a chemical catalyst.
前述熱醯亞胺化法可以將前述凝膠膜在100至600℃範圍的可變溫度下進行熱處理,使凝膠膜中存在的醯胺基實現醯亞胺化,詳細地,可以在200至500℃下,更詳細地,可以在300至500℃下進行熱處理,使凝膠膜中存在的醯胺基實現醯亞胺化。The aforementioned thermal imidization method can heat-treat the aforementioned gel film at a variable temperature ranging from 100 to 600°C, so that the amide groups present in the gel film can be imidized. Specifically, the gel film can be heat-treated at a temperature ranging from 200 to 600°C. At 500°C, in more detail, heat treatment may be performed at 300 to 500°C to achieve amide imidization of the amide groups present in the gel film.
不過,在形成凝膠膜的過程中,醯胺酸中一部分(約0.1莫耳%至10莫耳%)會被醯亞胺化,為此,可以在50℃至200℃範圍的可變溫度下乾燥聚醯胺酸組合物,這也可包括於前述熱醯亞胺化法的範疇。However, during the formation of the gel film, a portion of the amide acid (about 0.1 mol% to 10 mol%) will be imidized. For this purpose, a variable temperature ranging from 50°C to 200°C can be used. The polyamide composition is dried below, which may also be included in the category of the aforementioned thermal imidization method.
就化學醯亞胺化法而言,可以根據本行業公知的方法,利用脫水劑和醯亞胺化劑來製造聚醯亞胺膜。其中,所謂「脫水劑」,是指藉由對聚醯胺酸的脫水作用來促進閉環反應的物質,作為關於此的非限制性示例,可以例如脂族酸酐、芳族酸酐、N,N'-二烷基碳二亞胺、鹵代低級脂族、鹵代低級脂肪酸酐、芳基膦二鹵化物和亞硫醯鹵等。其中,從可得性和成本角度考慮,可較佳為脂族酸酐,作為其非限制性示例,可以例如為乙酸酐(或無水醋酸,AA)、丙酸酐和乳酸酐等,其可以單獨使用或組合兩種以上使用。As for the chemical imidization method, the polyimide membrane can be produced by using a dehydrating agent and an imidization agent according to methods known in the industry. Among them, the so-called "dehydrating agent" refers to a substance that promotes the ring-closing reaction by dehydrating polyamide. Non-limiting examples of this include aliphatic acid anhydrides, aromatic acid anhydrides, N, N' -Dialkylcarbodiimides, halogenated lower aliphatic, halogenated lower fatty acid anhydrides, arylphosphine dihalides and thionyl halides, etc. Among them, from the perspective of availability and cost, aliphatic acid anhydrides are preferred. Non-limiting examples thereof include acetic anhydride (or anhydrous acetic acid, AA), propionic anhydride, lactic anhydride, etc., which can be used alone. Or use two or more in combination.
另外,術語「醯亞胺化劑」意指具有促進對聚醯胺酸的閉環反應的效果的物質,例如可為脂族三級胺、芳族三級胺和雜環三級胺等亞胺類成分。其中,從作為催化劑的反應性角度考慮,可以較佳雜環三級胺。作為雜環三級胺的非限制性示例,可以例如喹啉、異喹啉、β-甲基吡啶(BP)、吡啶等,其可以單獨使用或混合兩種以上使用。In addition, the term "imidating agent" means a substance that has the effect of promoting the ring-closing reaction of polyamide acid. For example, it can be an imine such as an aliphatic tertiary amine, an aromatic tertiary amine, and a heterocyclic tertiary amine. class ingredients. Among these, heterocyclic tertiary amines are preferred from the viewpoint of reactivity as a catalyst. Non-limiting examples of heterocyclic tertiary amines include quinoline, isoquinoline, β-methylpyridine (BP), pyridine, etc., which may be used alone or in a mixture of two or more.
脫水劑的添加量,相對於聚醯胺酸中醯胺酸基1莫耳,較佳為0.5至5莫耳範圍以內,尤其較佳為1.0莫耳至4莫耳範圍以內。另外,醯亞胺化劑的添加量,相對於聚醯胺酸中醯胺酸基1莫耳,較佳為0.05莫耳至2莫耳範圍以內,尤其可以較佳為0.2莫耳至1莫耳範圍以內。The amount of the dehydrating agent added is preferably within the range of 0.5 to 5 moles, and particularly preferably within the range of 1.0 moles to 4 moles based on 1 mole of the amide group in the polyamic acid. In addition, the amount of the imidizing agent added is preferably within the range of 0.05 mol to 2 mol relative to 1 mol of the amide group in the polyamic acid, and is particularly preferably 0.2 mol to 1 mol. within ear range.
若前述脫水劑和醯亞胺化劑超過前述範圍,則化學醯亞胺化不充分,在所製造的聚醯亞胺膜上會形成裂紋,並且膜的機械強度也會降低。另外,若這些添加量超過前述範圍,則醯亞胺化會進行得過快,此時,會難以流延成膜形態或者所製造的聚醯亞胺膜會表現出脆性(brittle)特性,因而不推薦。If the dehydrating agent and imidization agent exceed the above ranges, chemical imidization will be insufficient, cracks will be formed in the polyimide film produced, and the mechanical strength of the film will also decrease. In addition, if these addition amounts exceed the aforementioned range, imidization will proceed too quickly, and in this case, it will be difficult to cast into a film form or the produced polyimide film will exhibit brittle characteristics. Not recommended.
作為複合醯亞胺化法的一個示例,可以在聚醯胺酸溶液中投入脫水劑及醯亞胺化劑後,在80至200℃下,較佳在100至180℃下加熱,在部分固化及乾燥後,在200至400℃下加熱5至400秒時間,從而可以製造聚醯亞胺薄膜。As an example of the composite imidization method, a dehydrating agent and an imidization agent can be added to the polyamic acid solution, and then heated at 80 to 200°C, preferably 100 to 180°C, to partially cure. After drying, it is heated at 200 to 400°C for 5 to 400 seconds to produce a polyimide film.
本發明提供一種包括上述聚醯亞胺膜和導電性金屬箔的可撓性覆金屬箔層壓板。The present invention provides a flexible metal foil-clad laminate including the above-mentioned polyimide film and conductive metal foil.
作為使用的金屬箔,不特別限定,但例如在將本發明的多層膜用於電子設備或電氣設備用途的情況下,可為包括銅或銅合金、不銹鋼或其合金、鎳或鎳合金(也包括42合金)、鋁或鋁合金的金屬箔。The metal foil used is not particularly limited, but for example, when the multilayer film of the present invention is used for electronic equipment or electrical equipment, it may include copper or copper alloys, stainless steel or alloys thereof, nickel or nickel alloys (also Metal foil including alloy 42), aluminum or aluminum alloys.
在普通的可撓性覆金屬箔層壓板中,多使用稱為軋製銅箔、電解銅箔的銅箔,在本發明中亦可較佳使用。另外,在這些金屬箔表面亦可被覆防銹層、耐熱性或黏合層。In ordinary flexible metal foil-clad laminates, copper foils called rolled copper foil and electrolytic copper foil are often used, and they can also be preferably used in the present invention. In addition, the surface of these metal foils can also be covered with an anti-rust layer, heat resistance or adhesive layer.
在本發明中,對於前述金屬箔的厚度不特別限定,只要是能夠根據其用途充分發揮功能的厚度即可。In the present invention, the thickness of the metal foil is not particularly limited as long as it is a thickness that can fully function according to its use.
本發明的可撓性覆金屬箔層壓板可為在前述聚醯亞胺膜的一面層壓有金屬箔或在前述聚醯亞胺膜的一面附加含有熱可塑性聚醯亞胺的黏合層,在前述金屬箔附著於黏合層的狀態下進行層壓的結構。The flexible metal foil-clad laminate of the present invention may include a metal foil laminated on one side of the polyimide film or an adhesive layer containing thermoplastic polyimide added to one side of the polyimide film. The metal foil is laminated while being attached to the adhesive layer.
本發明還提供一種包括前述可撓性覆金屬箔層壓板作為電信號傳輸電路的電子部件。The present invention also provides an electronic component including the aforementioned flexible metal foil-clad laminate as an electrical signal transmission circuit.
下文藉由發明的具體實施例,更詳細描述發明的作用和效果。不過,這種實施例只是作為發明示例而提出的,發明的權利範圍不由此限定。The functions and effects of the invention are described in more detail below through specific embodiments of the invention. However, such embodiments are only provided as examples of the invention, and the scope of rights of the invention is not limited thereby.
製造例1:聚醯亞胺膜的製造。Production Example 1: Production of polyimide film.
在具有攪拌器和氮注入/排出管的500 ml反應器中注入氮氣後投入DMF,將反應器溫度設置為30℃後,作為二胺成分,選擇對苯二胺(PPD)、間聯甲苯胺(m-tolidine,MTD)、1,3-雙(胺基苯氧基)苯(TPE-R)和二胺基二苯醚(ODA)中一部分並投入,作為二酐成分,選擇聯苯四甲酸二酐(BPDA)、均苯四甲酸二酐(PMDA)和氧雙鄰苯二甲酸酐(ODPA)中一部分並投入,確認其完全溶解。Inject nitrogen into a 500 ml reactor equipped with a stirrer and nitrogen injection/discharge pipe, then add DMF. After setting the reactor temperature to 30°C, select p-phenylenediamine (PPD) and m-toluidine as the diamine component. (m-tolidine, MTD), 1,3-bis(aminophenoxy)benzene (TPE-R) and diaminodiphenyl ether (ODA) are put in together. As the dianhydride component, diphenyl tetrahydrofuran is selected. Add a portion of formic dianhydride (BPDA), pyromellitic dianhydride (PMDA) and oxydiphthalic anhydride (ODPA) and confirm that they are completely dissolved.
然後,在氮氣氣氛下,加熱升溫反應器溫度至40℃,並持續攪拌120分鐘,製造了聚醯胺酸溶液。Then, in a nitrogen atmosphere, the reactor temperature was raised to 40° C., and stirring was continued for 120 minutes, thereby producing a polyamide solution.
在如此製造的聚醯胺酸溶液中,以醯胺酸基1莫耳為基準,添加3莫耳乙酸酐和1莫耳異喹啉,得到了用於聚醯亞胺膜的前驅物組合物。To the polyamide acid solution produced in this way, 3 moles of acetic anhydride and 1 mole of isoquinoline were added based on 1 mole of amide group to obtain a precursor composition for a polyimide film. .
將前述用於聚醯亞胺膜的前驅物組合物使用刮刀在SUS板上流延,在110℃下乾燥4分鐘,製造了凝膠膜。The precursor composition for the polyimide film was cast on a SUS plate using a doctor blade, and dried at 110° C. for 4 minutes to produce a gel film.
將前述凝膠膜與SUS板分離後,在380℃下熱處理8分鐘,製造了具有35μm厚度的聚醯亞胺膜。After the gel film was separated from the SUS plate, the gel film was heat-treated at 380° C. for 8 minutes to produce a polyimide film having a thickness of 35 μm.
所製造的聚醯亞胺薄膜的厚度使用安立(Anritsu)公司的薄膜厚度測量儀(Electric Film thickness tester)進行了測量。The thickness of the produced polyimide film was measured using an Anritsu Electric Film Thickness Tester.
<實施例1至3和比較例1至4><Examples 1 to 3 and Comparative Examples 1 to 4>
根據前面描述的製造例進行了製造,且如下表1所示調節了二胺單體和二酐單體的含量。Production was carried out according to the previously described production examples, and the contents of the diamine monomer and dianhydride monomer were adjusted as shown in Table 1 below.
[表1]
製造例2:可撓性金屬箔層壓板的製造。Production Example 2: Production of flexible metal foil laminate.
藉由濺射在製造例1製造的實施例1至3和比較例1至4的聚醯亞胺膜上沉積厚度為約80至300 nm的銅薄膜層作為用於電鍍電極的銅晶種(seed)層,並藉由電鍍形成厚度約為8至9μm的銅導電層。A copper thin film layer with a thickness of about 80 to 300 nm was deposited by sputtering on the polyimide films of Examples 1 to 3 and Comparative Examples 1 to 4 produced in Production Example 1 as a copper seed crystal for electroplating electrodes ( seed) layer, and form a copper conductive layer with a thickness of approximately 8 to 9 μm through electroplating.
(1) 熱膨脹係數測量(1) Thermal expansion coefficient measurement
熱膨脹係數(CTE)使用了TA公司熱機理分析儀(thermomechanical analyzer)Q400型,將製造例1製造的實施例1至3和比較例1至4的聚醯亞胺膜截斷成寬度4mm、長度20mm後,在氮氣氣氛下施加0.05N的張力,並以10℃/分鐘的速度從30℃升溫至400℃後重新以10℃/分鐘的速度冷卻,同時測量了50℃至200℃區間的斜率(50℃至200℃區間的溫度變化引起的尺寸變化率(ppm/℃))。The coefficient of thermal expansion (CTE) was measured using a TA company thermomechanical analyzer Q400. The polyimide films of Examples 1 to 3 and Comparative Examples 1 to 4 produced in Production Example 1 were cut into a width of 4 mm and a length of 20 mm. Finally, a tension of 0.05N was applied under a nitrogen atmosphere, and the temperature was raised from 30°C to 400°C at a rate of 10°C/min and then cooled again at a rate of 10°C/min. The slope in the range from 50°C to 200°C was measured at the same time ( Dimensional change rate caused by temperature change between 50℃ and 200℃ (ppm/℃)).
(2) 表面硬度測量(2) Surface hardness measurement
將製造例1製造的實施例1至3和比較例1至4的聚醯亞胺膜截斷成寬度100mm、長度100mm後,使用KLA-Tenco公司iNano奈米壓痕儀測量了表面硬度,奈米壓痕儀可以藉由測量將探針壓入樣品期間施加於探針上的力來測量表面硬度。After the polyimide films of Examples 1 to 3 and Comparative Examples 1 to 4 produced in Production Example 1 were cut into a width of 100 mm and a length of 100 mm, the surface hardness was measured using the KLA-Tenco iNano nanoindentation instrument. An indenter can measure surface hardness by measuring the force exerted on the probe as it is pressed into the sample.
(3) 常溫附著力測量(3) Adhesion measurement at room temperature
對使用實施例1至3和比較例1至4的聚醯亞胺膜並根據製造例2製造的可撓性金屬板層壓板應用濕法蝕刻製程,蝕刻成寬度為2mm的棒形態後,利用萬能試驗機(Universal Testing Machine),藉由90°剝離試驗,以20mm/min的速度進行拉伸而測量了常溫附著力。A wet etching process was applied to the flexible metal plate laminate manufactured according to Production Example 2 using the polyimide films of Examples 1 to 3 and Comparative Examples 1 to 4, and etched into a rod shape with a width of 2 mm, and then used The Universal Testing Machine measured adhesion at room temperature through a 90° peel test and stretching at a speed of 20mm/min.
前述濕法蝕刻製程按如下順序進行,即,在前述可撓性金屬箔層壓板上附著寬度2mm的棒形態的塗膜,噴灑蝕刻液(三氯化鐵[氯化鐵Ⅲ])以蝕刻金屬,從而形成棒形態的圖案,接著去除塗膜。The aforementioned wet etching process is carried out in the following order, that is, a rod-shaped coating film with a width of 2 mm is attached to the aforementioned flexible metal foil laminate, and an etching liquid (ferric chloride [ferric chloride III]) is sprayed to etch the metal , thereby forming a rod-shaped pattern, and then removing the coating film.
(4) 耐熱附著力測量(4) Heat-resistant adhesion measurement
對使用實施例1至3和比較例1至4的聚醯亞胺膜並根據製造例2製造的可撓性金屬板層壓板應用濕法蝕刻製程,蝕刻成寬度2mm的棒形態後,在150℃下熱處理168小時。A wet etching process was applied to the flexible metal plate laminate produced according to Production Example 2 using the polyimide films of Examples 1 to 3 and Comparative Examples 1 to 4. After etching into a rod shape with a width of 2 mm, the flexible metal plate laminate was etched at 150 Heat treatment at ℃ for 168 hours.
前述濕法蝕刻製程以與前述常溫附著力測量相同的方式執行。The aforementioned wet etching process is performed in the same manner as the aforementioned normal temperature adhesion measurement.
然後,利用萬能試驗機(Universal Testing Machine),藉由90°剝離試驗,以20mm/min的速度進行拉伸而測量了耐熱附著力。Then, a universal testing machine was used to perform a 90° peel test and the heat-resistant adhesion was measured by stretching at a speed of 20 mm/min.
藉由上述測量方法測量的製造例1製造的實施例1至3和比較例1至4的聚醯亞胺膜的熱膨脹係數(CTE)、表面硬度、常溫附著力和耐熱附著力示出於下表2。The thermal expansion coefficient (CTE), surface hardness, normal temperature adhesion and heat-resistant adhesion of the polyimide films of Examples 1 to 3 and Comparative Examples 1 to 4 produced in Production Example 1 measured by the above measurement method are shown below. Table 2.
另外,根據上述數學式1計算的附著力減小示出於下表2。In addition, the reduction in adhesion calculated according to the above-mentioned Mathematical Expression 1 is shown in Table 2 below.
[表2]
測量結果表明,實施例1至3的聚醯亞胺膜表現出大於1 ppm/℃、小於等於15 ppm/℃的熱膨脹係數,0.4 Gpa以上、0.6 Gpa以下的表面硬度,0.6 kgf/cm以上、0.9 kgf/cm以下的常溫附著力,0.3 kgf/cm以上、0.5 kgf/cm以下的耐熱附著力,以及50%以下的附著力減小特性。The measurement results show that the polyimide films of Examples 1 to 3 exhibit a thermal expansion coefficient of greater than 1 ppm/℃ and less than or equal to 15 ppm/℃, a surface hardness of more than 0.4 Gpa and less than 0.6 Gpa, and a surface hardness of more than 0.6 kgf/cm. Room temperature adhesion below 0.9 kgf/cm, heat-resistant adhesion above 0.3 kgf/cm and below 0.5 kgf/cm, and adhesion reduction characteristics below 50%.
與此相比,比較例1至4的聚醯亞胺膜,其熱膨脹係數、表面硬度、常溫附著力、耐熱附著力及附著力減小特性中任一項以上特性無法滿足本案申請的聚醯亞胺膜的特性範圍。In comparison, the polyimide films of Comparative Examples 1 to 4 cannot satisfy any one or more of the thermal expansion coefficient, surface hardness, adhesion at room temperature, heat-resistant adhesion and adhesion reduction characteristics of the polyimide film applied for in this case. Characteristic range of imine membranes.
因此可以確認,在本案的適宜範圍內製造的實施例1至3的多層聚醯亞胺膜,其熱尺寸穩定性、對水分的尺寸穩定性及與銅箔的附著力均優異,但超過本案的適宜範圍時,均難以全部滿足本案的多層聚醯亞胺膜的熱尺寸穩定性、對水分的尺寸穩定性及與銅箔的附著力。Therefore, it was confirmed that the multilayer polyimide films of Examples 1 to 3 produced within the appropriate range of this case were excellent in thermal dimensional stability, dimensional stability against moisture, and adhesion to copper foil, but exceeded that of this case. Even within the appropriate range, it is difficult to fully satisfy the thermal dimensional stability, dimensional stability against moisture, and adhesion to copper foil of the multilayer polyimide film in this case.
即,可以確認,具有優異的尺寸穩定性和與銅箔的附著力並全部滿足可應用於應用領域的多樣條件的多層聚醯亞胺膜,是在本案的適宜範圍內製造的聚醯亞胺膜。That is, it was confirmed that a multilayer polyimide film that has excellent dimensional stability and adhesion to copper foil and satisfies all the various conditions applicable to application fields is a polyimide produced within the appropriate range of this case. membrane.
本發明的聚醯亞胺膜及聚醯亞胺膜的製造方法的實施例只是使本發明所屬技術領域的一般技藝人士能夠容易地實施本發明的較佳實施例,不限定於前述實施例,因此,本發明的申請專利範圍不由此限定。因此,本發明的真正的技術保護範圍應根據附帶的申請專利範圍的技術思想確定。另外,在不超出本發明技術思想的範圍內,可以實現多種置換、變形及變更,這是從業人員不言而喻的,可以由從業人員容易地變更的部分也包括於本發明的申請專利範圍,這是不言而喻的。The embodiments of the polyimide film and the manufacturing method of the polyimide film of the present invention are only preferred embodiments that enable those of ordinary skill in the technical field to which the present invention belongs to easily implement the present invention, and are not limited to the foregoing embodiments. Therefore, the patentable scope of the present invention is not limited thereby. Therefore, the true technical protection scope of the present invention should be determined based on the technical ideas of the accompanying patent application scope. In addition, it is self-evident to practitioners that various substitutions, deformations and changes can be made without departing from the scope of the technical idea of the present invention. Parts that can be easily changed by practitioners are also included in the patent scope of the present invention. , which is self-evident.
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