TW202303705A - Laser annealing device and laser annealing method - Google Patents

Abstract

Provided is a laser annealing device with which it is possible to improve production efficiency, even in reforming of a crystallizing film, as well as to save space and reduce cost. The present invention comprises a dehydrogenating optical head that emits a dehydrogenating laser beam, the dehydrogenating optical head being moved in a scanning direction relative to an amorphous silicon film such that the dehydrogenating laser beam is released ahead of a crystallizing laser beam, at least a planned reformulation region in the amorphous silicon film is irradiated, and the amorphous silicon film is dehydrogenated.

Description

Laser annealing device and laser annealing method

The invention relates to a laser annealing device and a laser annealing method for modifying an amorphous silicon film into a pseudo-single crystal silicon film on a TFT substrate.

In flat panel displays (FPD: Flat Panel Displays) such as liquid crystal displays (LCD: Liquid Crystal Display) and organic EL displays (OLED: Organic Electroluminescence Display), the increase in size and high definition are progressing.

The FPD system includes a TFT substrate on which a thin film transistor (TFT: Thin Film Transistor) is formed. The TFT substrate is a substrate on which fine TFTs for active driving are formed on each of the pixels arranged in a matrix. For example, if it is a display with a full HD (1920×1080 dot (dot)) resolution and a 120Hz drive, a 10 million more than one pixel.

In order to increase the mobility of a channel region in a TFT, a laser annealing method is known in which a pseudo-single-crystal silicon is grown laterally on an amorphous silicon film. In the laser annealing method, the grains of the microcrystalline silicon film formed by excimer laser annealing are used as seed crystals. In this laser annealing method, the seed crystal is used as the starting point to make it grow laterally in the scanning direction of the continuous oscillating laser light, and a pseudo-single-crystal silicon film with high mobility can be formed.

In the above-mentioned laser annealing method of the amorphous silicon film, it is necessary to perform a dehydrogenation treatment for releasing hydrogen contained in the amorphous silicon film as the previous treatment. As an apparatus for performing this dehydrogenation treatment, there is known a dehydrogenation treatment furnace that accommodates a TFT substrate and heats it at a dehydrogenation treatment temperature; A dehydrogenation treatment device of a heat-generating current generating unit (see, for example, Patent Document 1). [Prior Art Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2020-119913

(Problem to be solved by the invention)

However, as described above, after using a dehydrogenation treatment device that desorbs hydrogen contained in the amorphous silicon film, if the TFT substrate is moved to a laser annealing device to perform laser annealing of the amorphous silicon film, there is a production efficiency. The subject of reduction. In addition, the dehydrogenation treatment device must have a space for accommodating the TFT substrate. Therefore, in the above-mentioned laser annealing method, there is a problem that a high cost is required until the amorphous silicon film is modified into a crystallized film (pseudo-single-crystal silicon film).

The present invention was made in view of the above-mentioned problems, and aims to provide a laser annealing device and a laser annealing device that can improve the production efficiency until the amorphous silicon film is modified into a crystallized film by laser annealing, and can save space and cost. Laser annealing method. (technical means to solve the problem)

In order to solve the above-mentioned problems and achieve the purpose, the aspect of the present invention is provided with: towards the intended modification region in the amorphous silicon film formed on the substrate, the laser light processed to be continuously oscillated is emitted for convergent crystallization An optical head for crystallization using a laser beam, the optical head for crystallization is in a state where the most convergent spot portion of the laser beam for crystallization is located inside the film of the amorphous silicon film, and the optical head for crystallization A laser annealing device for modifying the aforementioned region to be modified in the aforementioned amorphous silicon film into a crystallized film by relatively moving the amorphous silicon film along the scanning direction, characterized in that it includes: emitting a dehydrogenation laser beam The optical head for dehydrogenation, wherein the optical head for dehydrogenation uses the laser beam for dehydrogenation to irradiate at least the region to be modified before the laser beam for crystallization to remove the amorphous silicon film. In the way of hydrogenation, the aforementioned amorphous silicon film is relatively moved along the aforementioned scanning direction.

In terms of the above-mentioned aspect, it is preferable that the optical head for dehydrogenation emits a laser beam for dehydrogenation that is processed into a laser beam that is continuously oscillated, and the laser beam for dehydrogenation is the most convergent of the laser beams for dehydrogenation. The spot portion is located inside the aforementioned amorphous silicon film.

In the aspect described above, it is preferable that the beam spot of the dehydrogenation laser beam irradiated on the surface of the amorphous silicon film be arranged at a location smaller than that of the crystal layer irradiated on the surface of the amorphous silicon film. The beam spot of the dehydrogenation laser beam is closer to the upstream side of the scanning direction, and the wide size of the aforementioned beam spot of the aforementioned dehydrogenation laser beam is set to be larger than that of the aforementioned crystallization laser beam. The width dimension of the beam spot is longer.

In terms of the above aspect, it is preferable that the optical head for crystallization is guided by the laser light through the optical fiber for crystallization from the light source for crystallization, and the optical head for dehydrogenation is transmitted through the optical fiber for dehydrogenation by the light source for dehydrogenation. Guided laser light.

In the aspect described above, it is preferable that the optical head for crystallization and the optical head for dehydrogenation be composed of a common single optical head.

In terms of the above aspect, it is preferable that the optical head for crystallization and the optical head for dehydrogenation are formed by a common single optical head, and in the optical head, laser light is guided by a light source through a single optical fiber, On the output end face of the aforementioned optical fiber, an aperture having an opening for crystallization and an opening for dehydrogenation is arranged so that the opening for crystallization and the opening for dehydrogenation face each other. The crystallization laser beam is emitted from the opening, and the dehydrogenation laser beam is emitted from the dehydrogenation opening.

In the aspect described above, it is preferable that the output side of the optical fiber has a shape that expands so that the diameter becomes larger toward the output end face.

In terms of the above aspect, it is preferable that the aforementioned modified region is a channel semiconductor layer of a thin film transistor.

Another aspect of the present invention is directed toward the region to be modified in the amorphous silicon film formed on the substrate, and emits a laser beam for crystallization that is processed into a continuous oscillating laser light for convergence. The modification of the amorphous silicon film is predetermined by moving the amorphous silicon film relative to the scanning direction in a state where the most convergent spot portion of the laser beam is located inside the amorphous silicon film. A laser annealing method for modifying a region into a crystallized film, characterized in that the laser beam for dehydrogenation is irradiated with at least the planned modification region of the amorphous silicon film before the laser beam for crystallization In the method of performing dehydrogenation, the aforementioned amorphous silicon film is relatively moved toward the aforementioned scanning direction. (Effect of Invention)

With the laser annealing device and the laser annealing method of the present invention, it is possible to improve the production efficiency until the amorphous silicon film is modified into a crystallized film by performing laser annealing, and it is possible to save space and reduce the cost of the laser Effect of annealing device and laser annealing method.

The laser annealing device and the laser annealing method according to the embodiments of the present invention will be described in detail below based on the drawings. However, if the drawing is a model, it should be noted that the number of each member, the size of each member, the ratio of the size, the shape, etc. are different from the actual one. In addition, a portion in which the relation, ratio, or shape of mutual dimensions is different is included between the drawings.

[First Embodiment] (Configuration of Laser Annealing Apparatus) As shown in FIGS. 1 and 2 , the laser annealing apparatus 1 of this embodiment includes a light source unit 2 , an optical head 3 , an unillustrated substrate transport means for transporting a substrate 10 , and an unillustrated displacement gauge.

The light source unit 2 includes a crystallization light source unit 2A and a dehydrogenation light source unit 2B. Since the crystallization light source unit 2A and the dehydrogenation light source unit 2B have the same structure, the structure of the crystallization light source unit 2A will be described here, and the detailed structure of the dehydrogenation light source unit 2B will be omitted.

As shown in FIG. 2 , the crystallization light source unit 2A includes a plurality of semiconductor lasers LD ( LD1 to LDn ) that oscillate continuous oscillation laser light (CW laser light) as light sources. Here, continuous oscillation laser light (CW laser light) also includes the concept of so-called quasi-continuous oscillation in which laser light is continuously irradiated to a target region. That is, the laser light can be a pulsed laser, or a quasi-continuous oscillating laser whose pulse interval is shorter than the cooling time of the heated silicon thin film (amorphous silicon film) (irradiated with subsequent pulses before solidification). . As a laser light source, various lasers such as semiconductor lasers, solid lasers, liquid lasers, and gas lasers can be used.

However, in this embodiment, for example, semiconductor laser LD100-LDn is provided with the spare R of semiconductor laser LD.

The light source unit 2A for crystallization is equipped with the above-mentioned plurality of semiconductor laser LDs, a drive circuit 20 , and a plurality of coupling lenses 21 . The drive circuit 20 is connected to each of the plurality of semiconductor laser LDs, and drives each semiconductor laser LD.

The coupling lens 21 is connected to the output side of each semiconductor laser LD. One end of a crystallization optical fiber 22A serving as a waveguide is connected to each coupling lens 21 . In this embodiment, a multimode fiber is used as the crystallization fiber 22A.

The optical head 3 is provided with the optical head 3A for crystallization, and the optical head 3B for dehydrogenation. The optical head 3A for crystallization is equipped with the optical fiber array 31A for crystallization, and the imaging optical system 32A. The crystallization optical fiber array 31A is connected to the other end of the crystallization optical fiber 22A. As shown in Figure 4, the outgoing end of the crystallization optical fiber 22A connected to the crystallization optical fiber array 31A is connected to the exit end face of the crystallization optical fiber array 31A, and is arranged in a row at equal intervals along a straight line. configuration.

The dehydrogenation light source unit 2B shown in FIG. 1 is connected to the dehydrogenation optical head 3B through the dehydrogenation optical fiber 22B shown in FIG. 3 . As shown in FIG. 3 , the dehydrogenation optical head 3B includes a dehydrogenation optical fiber array 31B and an imaging optical system 32B.

The other end of the dehydrogenation optical fiber 22B is connected to the dehydrogenation optical fiber array 31B. As shown in Figure 4, the outgoing end of the dehydrogenation optical fiber 22B connected to the dehydrogenation optical fiber array 31B is arranged on the exit end face of the dehydrogenation optical fiber array 31B in a row along a straight line at equal intervals. configuration.

The imaging optical system 32A includes at least a first lens 33A on the incident side and a second lens 34A on the outgoing side. As shown in FIGS. 2 and 3 , the imaging optical system 32A receives laser light emitted from the crystallization optical fiber array 31A. As shown in FIG. 1 , the optical head 3A for crystallization processes the laser light so that it becomes the laser beam LB1 for crystallization that converges at the spot F toward the downstream side (rear side).

In this embodiment, as shown in FIG. 7-1 , on the emission side of the optical head 3A for crystallization, laser beams LB1 for crystallization are emitted from positions arranged at a pitch P1 along a straight line. The pitch P1 is set to be the same as the pitch of the gate lines 12 described later. However, in this embodiment, the direction in which the laser beam LB1 for crystallization is arranged is set so as to form a right angle with the extending direction of the gate line 12 described later.

The imaging optical system 32B has the same configuration as the aforementioned imaging optical system 32A, and includes at least a first lens 33B on the incident side and a second lens 34B on the outgoing side. As shown in FIG. 3 , laser light emitted from the dehydrogenation optical fiber array 31B is incident on the imaging optical system 32B. Also in the optical head 3B for dehydrogenation, laser light is processed so that it may become the laser beam LB2 for dehydrogenation which converge|converges in the spot part toward the downstream side (rear side).

On the side of the optical head 3A for crystallization, a displacement gauge (not shown) for correcting the positional deviation between the optical head 3A for crystallization and the substrate 10 is provided. The focal length of the crystallization laser beam LB1 emitted from the crystallization optical head 3A can be automatically adjusted based on the data of the positional displacement between the crystallization optical head 3A and the substrate 10 detected by the displacement meter. Adjust the autofocus function. However, in this embodiment, a displacement meter is used as the means of autofocus, but it is not limited to this, and various known techniques can be used. Wherein, the side of the optical head 3B for dehydrogenation is also provided with the same displacement gauge, which also has the data of the positional deviation between the optical head 3B for dehydrogenation and the substrate 10, and can be automatically carried out by the optical head 3B for dehydrogenation. The autofocus function of the focus adjustment of the outgoing dehydrogenation laser beam LB2.

In this embodiment, the laser beam LB1 for crystallization and the laser beam LB2 for dehydrogenation have characteristics of a top hat shape, and the cross-sectional shape in a direction perpendicular to the optical axis is a square. Here, the cross-sectional shape of the laser beam LB1 for crystallization and the laser beam LB2 for dehydrogenation may be a rectangle, a hexagon, or the like. In order to form the cross-sectional shapes of the laser beam LB1 for crystallization and the laser beam LB2 for dehydrogenation into the shapes shown above, if the cross-sectional shapes of the cores of the optical fiber 22A for crystallization and the optical fiber 22B for dehydrogenation are set as Square, rectangular, hexagonal, etc. will do.

The substrate conveyance means not shown is provided with the mechanism which conveys the board|substrate 10 to which the laser annealing process was performed to a scanning direction (one direction of X direction in this embodiment) at arbitrary speed. Therefore, by transferring the substrate 10 side with the positions of the crystallization optical head 3A and the dehydrogenation optical head 3B fixed, the crystallization laser beam LB1 and the dehydrogenation laser beam LB1 are scanned relative to the substrate 10 . Beam LB2.

However, in this embodiment, as shown in FIG. 3 , the beam spot of the laser beam LB1 for crystallization irradiated on the surface of the amorphous silicon film 15a described later is arranged at a lower position than that irradiated on the amorphous silicon film 15a. The beam spot of the dehydrogenation laser beam LB2 on the surface of 15 a is closer to the downstream side in the scanning direction S. Therefore, the region to be modified in the amorphous silicon film 15a is irradiated with the dehydrogenation laser beam LB2 before being irradiated with the crystallization laser beam LB1.

As shown in FIG. 5 , the beam spot width (length in the Y direction) of the dehydrogenation laser beam LB2 is larger than that of the crystallization laser beam irradiated on the surface of the amorphous silicon film 15a described later. The width dimension (length in the Y direction) of the beam spot of LB1 is set to be long.

The configuration of the substrate 10 will be described below. As shown in FIG. 1 , a substrate 10 as a substrate to be laser annealed has a glass substrate 11 as a main body. On the glass substrate 11 are sequentially stacked: a plurality of gate lines 12 patterned with copper (Cu) and other metal wiring patterns, a silicon nitride film (Si ₃ N ₄ ) 13, a silicon oxide film (SiO ₂ ) 14. The amorphous silicon film 15a and the like as a film to be treated by laser annealing. The plurality of gate lines 12 are arranged in parallel with each other. As described above, the distance between the gate lines 12 is set to the above-mentioned distance P1.

The gate line 12 includes a portion serving as a gate electrode of a TFT formed for each pixel region not shown. By the way, as an example, the gate line 12 has a thickness of 200 to 700 nm, the silicon nitride film 13 has a thickness of about 300 nm, the silicon oxide film 14 has a thickness of 50 to 100 nm, an amorphous The thickness of the silicon film 15a is about 50 nm.

In this embodiment, the beam diameter size of the beam spot of the crystallization laser beam LB1 irradiated on the surface of the amorphous silicon film 15 a is set to an arbitrary size, for example, from 5 μm to 300 μm. In addition, it is preferable that the beam diameter of the beam spot of the laser beam LB2 for dehydrogenation is set larger than the beam diameter of the beam spot of the said laser beam LB1 for crystallization. Wherein, the range of the beam diameter size of the beam spot of the crystallization laser beam LB1 is such that the irradiation surface of the crystallization laser beam LB1 can be accommodated in the semiconductor active region (modification plan region) of the TFT. . Wherein, the diameter of the irradiation surface of the laser beam LBcw is preferably not less than 10 μm and not more than 100 μm.

In this embodiment, the scanning speed of the crystallization laser beam LB1 relative to the amorphous silicon film 15a is preferably 200mm-500mm/sec, but it is not limited thereto. In addition, the distance between the beam spot of the crystallization laser beam LB1 and the beam spot of the dehydrogenation laser beam LB2 arranged on the upstream side and the downstream side along the scanning direction S is as small as the diffraction of light. A distance above the limit is sufficient.

In this embodiment, before irradiation with the laser beam LB1 for crystallization, the laser beam LB2 for dehydrogenation is irradiated with the laser beam LB2 for dehydrogenation in the direction extending along the gate line 12, and the region to be modified in the amorphous silicon film 15a is irradiated. This partially dehydrogenates the amorphous silicon film 15a. By irradiating the dehydrogenated area to be modified as described above with the laser beam LB1 for crystallization, as shown in FIG. Single crystal silicon film 15La.

According to the laser annealing apparatus 1 of this embodiment, since the spot portion F with high power density among the laser beam LB1 for crystallization and the laser beam LB2 for dehydrogenation is located inside the film of the amorphous silicon film 15a, Large heat is mainly supplied to the amorphous silicon film 15a. Next, most of the heat is transmitted in the amorphous silicon film 15a from the spot portion F toward the side (in the direction of the arrow h in FIG. 1). On the rear side (lower side) of the spot portion F, since the beam is diffused, the power density of the light reaching the underlying silicon oxide film 14 and the like becomes low, and overheating of the lower side of the amorphous silicon film 15a can be suppressed. Therefore, with the laser annealing apparatus 1 of the present embodiment, it is possible to avoid damage to the gate line 12 or other wiring patterns or the glass substrate 11 due to overheating.

In particular, in this embodiment, since it is not necessary to perform dehydrogenation of the amorphous silicon film in a separate process, laser annealing is performed to modify the amorphous silicon film 15a into a pseudo-single-crystal silicon film (crystallized film). High production efficiency, space saving and cost reduction.

With the laser annealing apparatus 1 of this embodiment, it is only necessary to irradiate the dehydrogenation laser beam LB2 and the crystallization laser beam LB1 on the planned modification region of the channel semiconductor layer that should be formed into a TFT, so it is possible to Improve energy efficiency.

Here, the spot portion F may have a limited width (margin) in the optical axis direction as a range in which the power density maintains the characteristic of the top-hat shape. If it is within the above range, uniform annealing can be performed and the state in which energy is concentrated on the amorphous silicon film 15a can be maintained. The range in which the power density in the spot portion F maintains the characteristic of the top hat shape will be described later in the eighth embodiment.

In addition, in the present invention, the beam diameter of the laser beam LB1 for crystallization can be considered as the diameter dimension of the flat portion of the top-hat shape. In this case, if uniform annealing treatment can be performed in the area to be modified, because the power density is sharp on the outside of the top-hat-shaped flat part in the laser beam LB1 for crystallization and the laser beam LB2 for dehydrogenation Therefore, it can take into account the avoidance of thermal damage and the improvement of energy utilization efficiency.

In addition, if the amorphous silicon film 15a is formed on the entire surface of the substrate and the beam diameter (the width of the irradiated area) is very smaller than the distance between the gate lines, the beam diameter can also be larger than the area to be modified. The generation of heat is concentrated on the amorphous silicon film 15a, and the energy utilization efficiency is greatly improved compared with conventional linear beam annealing. Here, the beam diameter is sufficiently smaller than the distance between the gate lines means, for example, that the beam diameter is 1/10 or less of the distance between the gate lines.

7-2 is an example in which the optical head 3A for crystallization of the laser annealing apparatus 1 according to the first embodiment of the present invention is set to be rotatably driven by a not-shown rotatable drive unit. In this case, the optical head 3A for crystallization is applicable when the pitch P2 of the gate lines 12 is shorter than the pitch P1 of the gate lines 12 shown in FIG. 7-1 . As shown in FIG. 7-2 , the optical head 3A for crystallization is rotated and adjusted so that the laser beam LB1 for crystallization corresponds to the plurality of gate lines 12, thereby reliably irradiating the laser beam LB1 for crystallization to A region to be modified in the amorphous silicon film 15 a above the gate line 12 .

Among them, when the optical head 3A for crystallization that is rotating and moving obliquely as shown in FIG. Since the gate lines 12 are sequentially shifted, it is only necessary to set so that the output timing to the semiconductor laser LD is sequentially delayed in the drive circuit 20 .

According to this embodiment, the pitch between columns to which the crystallization laser beam LB1 is irradiated can be changed by the rotation of the crystallization optical head 3A. Therefore, it is possible to realize a laser annealing device that is also applicable when the pitch of the gate lines 12 on the substrate is changed. However, similarly, it is also applicable when the optical head 3B for dehydrogenation is rotationally driven and the pitch of the gate line 12 is changed.

[Laser annealing method] Next, the laser annealing method of this embodiment will be described. The laser annealing method is a laser annealing treatment method for forming a pseudo-single-crystal silicon film 15La in a region to be modified in the substrate 10 using the laser annealing apparatus 1 .

First, in the laser annealing method, as shown in FIG. 1 , prepare to form a plurality of gate lines 12 parallel to each other on a glass substrate 11 , and cover the gate lines on the upper layer of the plurality of gate lines 12 . 12 on the substrate 10 with an amorphous silicon film 15a formed thereon.

Next, while relatively moving the substrate 10 in the scanning direction S by a substrate conveying means not shown, the substrate 10 is directed toward the region to be modified in the amorphous silicon film 15a, as shown in FIG. The laser beam LB2 for dehydrogenation is irradiated before the beam LB1.

Here, a state is maintained in which the most convergent spot portion F of the crystallization laser beam LB1 and the dehydrogenation laser beam LB2 is located inside the amorphous silicon film 15a. As a result, as shown in FIG. 6, the region to be the channel semiconductor layer of the TFT can be modified into a pseudo-single-crystal silicon film 15La.

In the laser annealing method of this embodiment, the pseudo-single-crystal silicon film 15La can be formed only in the region where the channel semiconductor layer of the TFT is to be formed, so annealing with good energy efficiency can be performed. Therefore, in this laser annealing method, the production efficiency until the amorphous silicon film 15a is modified into a crystallized film by performing laser annealing is improved, and a conventional furnace (furnace) is not required, and space saving can be achieved. reduction and cost reduction.

In addition, in the laser annealing method of this embodiment, since there is no thermal damage to the gate line 12 or the glass substrate 11, etc., it is possible to manufacture a TFT substrate with a high yield.

[Second Embodiment] Fig. 8 shows the main parts of the laser annealing apparatus according to the second embodiment of the present invention. In this embodiment, the optical fiber array 31A for crystallization and the optical fiber array 31B for dehydrogenation in the above-mentioned first embodiment are composed of a common single optical fiber array 31 . The crystallization laser beam LB1 is formed by laser light guided by a crystallization light source (not shown) through a crystallization optical fiber 22A having a relatively small cross-sectional area. The dehydrogenation laser beam LB2 is formed by laser light guided through the dehydrogenation optical fiber 22B having a relatively large cross-sectional area from a dehydrogenation light source (not shown).

As shown in FIG. 9 , in this embodiment, the ends of the plurality of crystallization optical fibers 22A and the plurality of dehydrogenation optical fibers 22B may be arranged on the output end face of the single optical fiber array 31 .

As shown in FIG. 8 , in this embodiment, both the laser beam LB1 for crystallization and the laser beam LB2 for dehydrogenation converge on the common first lens 33 and second lens 34. for processing. Also in this embodiment, as shown in FIG. 10 , the beam spot width (length in the Y direction) of the dehydrogenation laser beam LB2 is set to be larger than that irradiated on the surface of the amorphous silicon film 15a described later. The width dimension (length in the Y direction) of the beam spot of the laser beam LB1 for crystallization is long.

In this embodiment, since the optical fiber array 31 constituting the optical head 3, the first lens 33, and the second lens 34 are each single, the device can be simplified.

[third embodiment] Fig. 11 shows the main parts of the laser annealing apparatus according to the third embodiment of the present invention. In the present embodiment, the crystallization optical fiber array 31A and the dehydrogenation optical fiber array 31B are constituted by a common single optical fiber array 31 as in the above-mentioned second embodiment. In the optical fiber array 31, the laser light is guided by the light source through the optical fiber 22 with a single long diameter.

As shown in FIG. 11 , on the exit end face of the optical fiber 22 , a crystallization opening 40A and a dehydrogenation opening 40B are arranged to face the exit end face of the optical fiber 22 so that relatively small openings for crystallization are partitioned and formed. The aperture 40 of the portion 40A and the relatively large dehydrogenation opening portion 40B. The crystallization laser beam LB1 is emitted from the crystallization opening 40A, and the dehydrogenation laser beam LB2 is emitted from the dehydrogenation opening 40B. Also in this embodiment, as in the above-mentioned second embodiment, both of the laser beam LB1 for crystallization and the laser beam LB2 for dehydrogenation are formed by the common first lens 33 and second lens 34. processing in a convergent manner.

Also in this embodiment, since the optical fiber array 31 constituting the optical head 3 and the first lens 33 and the second lens 34 are each single, the device can be simplified.

[Fourth Embodiment] Fig. 12 shows the main parts of the laser annealing apparatus according to the fourth embodiment of the present invention. In the present embodiment, the crystallization optical fiber array 31A and the dehydrogenation optical fiber array 31B are constituted by a common single optical fiber array 31 as in the above-mentioned second embodiment. In the optical fiber array 31 , the laser light is guided by a light source through a single optical fiber 22 with a small diameter. Among them, as shown in FIG. 12 , the optical fiber 22 is formed with a diameter-enlarged portion 22E having a shape enlarged so as to increase in diameter toward the exit end surface in the optical fiber array 31 .

As shown in FIG. 12 , on the exit end face of the optical fiber 22 , a crystallization opening 40A and a dehydrogenation opening 40B face the exit end face of the optical fiber 22 . The aperture 40 of the portion 40A and the relatively large dehydrogenation opening portion 40B. The crystallization laser beam LB1 is emitted from the crystallization opening 40A, and the dehydrogenation laser beam LB2 is emitted from the dehydrogenation opening 40B. In this embodiment, as in the above-mentioned second embodiment, both the crystallization laser beam LB1 and the dehydrogenation laser beam LB2 are directed at the common first lens 33 and second lens 34. Process in a convergent manner.

In the present embodiment, a thin optical fiber 22 is used, but since the end of the optical fiber 22 is formed with an enlarged diameter portion 22E with a long diameter toward the exit end face, the opening 40A for crystallization in the aperture 40 and the dehydrogenation can be ensured. The distance between the openings 40B is used.

[Fifth Embodiment] Fig. 13 is a schematic configuration diagram showing a laser annealing apparatus 1A according to a fifth embodiment of the present invention. Among them, in this embodiment, an optical head 3A for crystallization and an optical head 3B for dehydrogenation not shown are provided, but since they have the same structure, the optical head 3A for crystallization will be described below, and the description of the dehydrogenation will be omitted. Use optical head 3B.

This embodiment is characterized in that it includes a light quantity sensor D1 that detects the light quantity of each of the plurality of crystallization laser beams LB1. The other configurations in this embodiment are the same as those of the laser annealing apparatus 1 in the above-mentioned first embodiment, and thus description thereof will be omitted.

The light quantity sensor D1 is arranged behind the optical head 3A for crystallization, and can move sequentially to the light spot F of the laser beam LB1 for crystallization. In addition, this light quantity sensor D1 is set so that when detecting the light quantity of one laser beam LB1 for crystallization, the adjacent laser beam LB1 for crystallization will not enter.

In this embodiment, the data detected by the light quantity sensor D1 is fed back to the drive circuit 20, and the output of the semiconductor laser LD which is the light source of the crystallization laser beam LB1 is adjusted.

In the present embodiment, before the laser annealing treatment, the light intensity of each crystallization laser beam LB1 is adjusted to achieve uniformity of the output (light intensity) of the crystallization laser beams LB1. Therefore, with the laser annealing apparatus 1A of the present embodiment, the electrical characteristics of the channel semiconductor layers of TFTs can be uniformed. Here, similarly, a light quantity sensor not shown may detect the light quantity of the dehydrogenation laser beam LB2 to perform output adjustment of the semiconductor laser LD not shown.

[Sixth Embodiment] Fig. 14 is a schematic configuration diagram of a laser annealing apparatus 1B according to a sixth embodiment of the present invention. In this embodiment, an optical head 3A for crystallization and an optical head 3B for dehydrogenation (not shown) are provided, but since they have the same structure, the optical head 3A for crystallization will be described below, and the description of the optical head 3B for dehydrogenation will be omitted. Head 3B.

The laser annealing apparatus 1B of this embodiment is equipped with a beam splitter 35 in the optical path in the imaging optical system 32A, and a side lens 36 and a light quantity sensor D2 are arranged on the side of the beam splitter 35 . In the present embodiment, the crystallization laser beam LB1 reflected by the beam splitter 35 is set to enter the light quantity sensor D2 through the side lens 36 . Other configurations of the laser annealing apparatus 1B of this embodiment are substantially the same as those of the above-mentioned first embodiment.

In this embodiment, the data detected by the light sensor D2 is fed back to the drive circuit 20, and the output of the semiconductor laser LD which is the light source of the crystallization laser beam LB1 is adjusted. In this embodiment, it is possible to adjust the output of each semiconductor laser LD while operating the laser annealing apparatus 1B.

[Seventh Embodiment] FIG. 15 is a schematic configuration diagram showing a laser annealing apparatus 1C according to a seventh embodiment of the present invention, and FIG. 16 is a side view of main parts of the laser annealing apparatus 1C. In this embodiment, an optical head 3A for crystallization and an optical head 3B for dehydrogenation (not shown) are provided, but the optical head 3A for crystallization is substantially the same as the optical head 3B for dehydrogenation (not shown). Therefore, the optical head 3A for crystallization will be described below, and the description of the optical head 3B for dehydrogenation will be omitted.

The laser annealing apparatus 1C of this embodiment makes the laser light emitted from the crystallization optical fiber array 31A pass through the first lens 33A and be reflected downward (sideward) by a scanning mirror SM such as a galvanometer mirror. The crystallization laser beam LB1 reflected by the scanning mirror SM is irradiated to the substrate side through the second lens 34 arranged below. As shown in FIG. 16 , the scanning mirror SM is set to be rotatable and adjustable in the direction of the arrow B, so that the degree of inclination can be changed.

According to this embodiment, the height dimension of the device can be shortened to simplify the device. Further, by rotating and adjusting the scanning mirror SM, the irradiation position of the crystallization laser beam LB1 or the depth position of the spot portion F in the film thickness direction from the surface of the amorphous silicon film 15a can be adjusted.

[Eighth Embodiment] Fig. 17 is a schematic configuration diagram of a laser annealing apparatus 1D according to an eighth embodiment of the present invention. In this embodiment, an optical head 3A for crystallization and an optical head 3B for dehydrogenation (not shown) are provided, but the optical head 3A for crystallization is substantially the same as the optical head 3B for dehydrogenation (not shown). Therefore, the optical head 3A for crystallization will be described below, and the description of the optical head 3B for dehydrogenation will be omitted.

This embodiment includes an imaging optical system 32D in which a mask 37 having an opening 37A is disposed at the pupil position of the imaging optical system 32 of the laser annealing apparatus 1A of the fifth embodiment. Other configurations of the laser annealing apparatus 1D of the present embodiment are substantially the same as those of the laser annealing apparatus 1A of the fifth embodiment described above.

According to this embodiment, the pattern of the crystallization laser beam LB1 passing through the imaging optical system 32D can be changed by the mask 37 . Also in this embodiment, since the light quantity sensor D1 is provided, the light quantity of each of the pattern-changed crystallization laser beams LB1 can be detected by the light quantity sensor D1.

[Ninth Embodiment] Fig. 18 is a schematic configuration diagram of a laser annealing apparatus 1E according to a ninth embodiment of the present invention. FIG. 19 is a schematic configuration diagram of the imaging optical system 38 in the laser annealing apparatus 1E. In this embodiment, an optical head 3A for crystallization and an optical head 3B for dehydrogenation not shown are provided, but since the optical head 3A for crystallization is the same as the optical head 3B for dehydrogenation not shown Therefore, the optical head 3A for crystallization will be described, and the description of the optical head 3B for dehydrogenation will be omitted.

As shown in FIG. 18, the laser annealing apparatus 1E of this embodiment is the same as the first embodiment, and includes: an optical fiber array 31A for crystallization and an imaging optical system 38 as an optical head 3A for crystallization. The other end of the crystallization optical fiber 22A is connected to the crystallization optical fiber array 31A. The output ends of the crystallization optical fibers 22A are arranged on the output end face of the crystallization optical fiber array 31A so as to be arranged in a row along a straight line.

In this embodiment, the imaging optical system 38 is constituted by a telecentric optical system. In addition, the optical fiber array 31A for crystallization is displaced along the optical axis direction by the actuator 39 . In the present embodiment, when the laser annealing apparatus 1E is in autofocus, only the crystallization optical fiber array 31A is moved along the optical axis by the actuator 39 . At this time, the crystallization light source unit 2A and the imaging optical system 38 do not move.

As shown in FIG. 19 , in the present embodiment, the imaging optical system 38 is a telecentric optical system composed of optical members L1 to L14 such as plural lenses arranged sequentially along the optical axis direction. By including the imaging optical system 38 composed of a telecentric optical system as described above, when focusing on the substrate 10, the actuator 39 only needs to move the light-weight optical fiber array 31A for crystallization. Responsive autofocus performance.

In addition, since the imaging optical system 38 is made of a telecentric optical system, there is no imaging shift with respect to the substrate 10, and the distance between the irradiation positions of the complex crystallization laser beam LB1 on the surface of the substrate 10 does not change. The advantages.

Among them, as the actuator 39 , a piezoelectric actuator, which is a positioning element using a piezoelectric effect, is applicable. Piezoelectric actuators can accurately perform positioning in the extremely small range of nanometers to hundreds of microns. In addition, since the piezoelectric actuator is formed of ceramics, it is very hard and can generate a large force. In addition, piezo actuators allow compact and energy-saving drives. Among them, in this embodiment, a piezoelectric actuator is used as the actuator 39, but of course other driving means such as a linear motor can also be used.

In this laser annealing apparatus 1E, it is only necessary to move the lightweight crystallization optical fiber array 31A, so the load on the actuator 39 is small and a rapid autofocus function can be provided.

[Tenth Embodiment] Fig. 20 is a schematic configuration diagram showing a laser annealing apparatus 1F according to a tenth embodiment of the present invention. In this embodiment, a semiconductor laser LD as a single light source, a coupling lens 21 , a single optical fiber 22 , a single crystallization optical head 3A, and a substrate transfer means (not shown) for transferring a substrate 10 are provided. In this embodiment, an unillustrated dehydrogenation optical head 3B is also provided, but description thereof will be omitted.

The semiconductor laser LD oscillates continuous oscillation laser light (CW laser light) as in the above-mentioned embodiments. The coupling lens 21 is connected to the output side of the semiconductor laser LD. One end of a crystallization optical fiber 22A serving as a waveguide is connected to the coupling lens 21 . In this embodiment, for example, a square fiber is used as the crystallization fiber 22A.

The optical head 3A for crystallization is equipped with the 1st lens 33A of the incidence side which is an imaging optical system, and the 2nd lens 34A of the output side. As shown in FIG. 20 , laser light emitted from the other end portion of the crystallization optical fiber 22A is incident on the crystallization optical head 3A. In the optical head 3A for crystallization, laser light is processed so that it becomes the laser beam LB1 for crystallization which converges at the spot part F toward the downstream side (rear side). Also in this embodiment, it is set so that the spot part F is located in the film interior (inside of a depth direction) of an amorphous silicon film.

In the present embodiment, the laser beam LB1 for crystallization also has a characteristic of a top-hat shape, and the cross-sectional shape in a direction perpendicular to the optical axis is a square. Wherein, the cross-sectional shape of the laser beam LB1 for crystallization may also be a rectangle, a hexagon, or the like. When forming the cross-sectional shape of the crystallization laser beam LB1 as described above, the cross-sectional shape of the core of the crystallization optical fiber 22A may be square, rectangular, hexagonal, or the like.

The substrate conveying means (not shown) is provided with a mechanism for conveying the substrate 10 subjected to the laser annealing process at an arbitrary speed in the scanning direction, as in the above-mentioned embodiments. Therefore, by transferring the substrate 10 side in a state where the position of the optical head 3A for crystallization is fixed, the laser beam LB1 for crystallization is relatively scanned with respect to the substrate 10 .

With the laser annealing apparatus 1F of this embodiment, since the spot F with high power density in the crystallization laser beam LB1 is located inside the amorphous silicon film, a large amount of heat is mainly supplied to the amorphous silicon film. Next, most of the heat is transmitted from the spot portion F toward the side to the inside of the amorphous silicon film. On the rear side (lower side) of the spot portion F, since the beam is diffused, the power density of the light reaching the underlying silicon oxide film or the like becomes low, and overheating of the lower side of the amorphous silicon film can be suppressed. Therefore, by using the laser annealing apparatus 1F, it is possible to avoid damage to gate lines, other wiring patterns, or glass substrates due to overheating.

[Eleventh Embodiment] Fig. 21 shows the basic principle of the laser annealing device and the laser annealing method according to the eleventh embodiment of the present invention.

In the above-mentioned first to tenth embodiments, the crystallization laser beam LB1 is used for crystallization in a state where the most converged spot portion F is located in the film interior of the amorphous silicon film 15a in the region to be modified. The laser beam LB1 scans. On the other hand, in this embodiment, as shown in FIG. 21 , a region A including the focal point and the vicinity of the focal point of the laser beam LB1 for crystallization and in which the beam profile maintains a top-hat shape is located between the amorphous silicon film 15a and the non-crystalline silicon film 15a. In a state where the regions inside the film overlap, the crystallization laser beam LB1 is scanned in the region to be modified. That is, in the laser annealing apparatus of the present embodiment, it is sufficient if the amorphous silicon film 15a overlaps the region A of the laser beam LB1 for crystallization shown in FIG. 21 .

As shown in FIG. 21 , the region A includes (1), (2) and (3) in the laser beam LB1 for crystallization. FIG. 22-3 shows the relationship between the radial position of the laser beam and the power density in the range of (1) in FIG. 21 . As shown in FIG. 21 , the region (1) is a region of approximately the depth of focus, and as shown in FIG. 22-3 , a typical top-hat beam profile is shown. The area of (2) in Fig. 21 is located closer to the focal point than the area of (1), as shown in Fig. 22-2, it is a top-hat area of the laser profile. The area of (3) in Fig. 21 is located behind the area of (1) or behind the focal point. As shown in Fig. 22-4, it is a top-hat area where the laser profile is considered.

The area of (4) in FIG. 21 is located closer to the area of (2), as shown in FIG. 22-1 , and becomes a shape in which the laser profile is not regarded as a top hat shape. The area of (5) in FIG. 21 is located further back than the area of (3), and as shown in FIG. 22-5 , it becomes a shape in which the laser profile is not regarded as a top hat shape. Therefore, in this embodiment, the region A shown in FIG. 21 is defined as a region where the beam profile maintains the top hat shape. Here, the region A may be appropriately set according to the conditions of the optical head 3 and the like.

The region (1) in FIG. 21 has sufficient energy density when annealing the amorphous silicon film 15a as shown in FIG. 22-3, and has a flat portion having a wide size for annealing necessary regions. The areas of (2) and (3) in Figure 21 are shown in Figure 22-2 and Figure 22-4, which are similar to the characteristics of the area of (1), but the areas of (4) and (5) are shown in the figure As shown in FIG. 22-1 and FIG. 22-5, the energy density is not sufficient, and the width of the flat portion for annealing the necessary region is narrow, so this region is not suitable for local annealing of the amorphous silicon film 15a.

The eleventh embodiment of the present invention has been described above, but other configurations are the same as the laser annealing apparatus and laser annealing method of the first embodiment.

In this embodiment, for example, if the amorphous silicon film 15a is located in the region (2) shown in FIG. Part is attracted by the amorphous silicon film 15a, so there is no thermal damage to the substrate, wiring, etc. under the amorphous silicon film 15a. Therefore, according to the present embodiment, the condition setting of the optical head 3 and the like can be easily set, and the device cost can be reduced.

(Other implementation forms) While the embodiments of the present invention have been described above, it should be understood that the statements and drawings forming a part of the disclosure of the embodiments are not intended to limit the present invention. Those skilled in the art should be able to clearly understand various alternative embodiments, examples, and application techniques from this disclosure.

In the above-mentioned embodiment, processing is performed in such a manner that the laser beam LB2 for dehydrogenation converges in a spot portion, and the spot portion is located in the interior of the amorphous silicon film, but it is not for Limited to this, only the surface of the amorphous silicon film may be irradiated with the dehydrogenation laser beam LB2.

In the above-mentioned embodiment, the amorphous silicon film 15a formed on the upper layer of the gate line 12 to cover the gate line 12 is annealed, but the laser annealing device and laser annealing method of the present invention can also be applied to The case where no gate line is formed under the amorphous silicon film. That is, the laser annealing apparatus and the laser annealing method of the present invention are also applicable to the manufacture of TFTs having a bottom gate (inverted staggered) structure and TFTs having a top gate (staggered) structure. In addition, the present invention is also applicable to laser annealing of an amorphous silicon film formed on a substrate on which no gate line is provided.

D1, D2: light sensor F: spot part h: Arrow direction L1~L14: Optical components LB1: Laser beam for crystallization LB2: Laser beam for dehydrogenation LD, LD1~LDn: semiconductor laser P1: Pitch R: spare part S: scanning direction SM: scanning mirror 1, 1A, 1B, 1C, 1D, 1E, 1F: Laser annealing device 2: Light source unit 2A: Light source unit for crystallization 2B: Light source unit for dehydrogenation 3: Optical head 3A: Optical head for crystallization 3B: Optical head for dehydrogenation 10: Substrate (substrate treated by laser annealing) 11: Glass substrate (substrate) 12: Gate line 13: Silicon nitride film 14: Silicon oxide film 15a: Amorphous silicon film 15La: Pseudo-single crystal silicon film 20: Drive circuit 21:Coupling lens 22: Optical fiber 22A: Optical fiber for crystallization 22B: Optical fiber for dehydrogenation 22E: expansion part 31: Fiber array 31A: Optical fiber array for crystallization 31B: Optical fiber array for dehydrogenation 32, 32A, 32B: Imaging optical system 33,33A,33B: 1st lens 34, 34A, 34B: second lens 35: beam splitter 36: side lens 37: mask 37A: Opening 38: Imaging optical system 39: Actuator 40: Aperture 40A: Opening for crystallization 40B: Opening for dehydrogenation

[ Fig. 1] Fig. 1 is a cross-sectional explanatory view showing a method of manufacturing a TFT array using a laser annealing apparatus according to a first embodiment of the present invention. [ Fig. 2] Fig. 2 is a schematic configuration diagram showing a laser annealing apparatus according to a first embodiment of the present invention. [ Fig. 3 ] is an explanatory diagram showing the optical head for crystallization and the optical head for dehydrogenation of the laser annealing apparatus according to the first embodiment of the present invention. [ Fig. 4 ] is a bottom view showing a state in which the crystallization optical fiber array and the dehydrogenation optical fiber array are viewed from below in the laser annealing apparatus according to the first embodiment of the present invention. [FIG. 5] shows the beam spots of the crystallization laser beam and the radiation of the dehydrogenation laser beam irradiated on the surface of the amorphous silicon film in the laser annealing apparatus according to the first embodiment of the present invention. A plan view of the bundle point. [ Fig. 6] Fig. 6 is an explanatory plan view showing a method of manufacturing a TFT array using the laser annealing apparatus according to the first embodiment of the present invention. [ Fig. 7-1 ] is a plan explanatory view showing a laser annealing method using the laser annealing apparatus according to the first embodiment of the present invention. [ Fig. 7-2 ] is an explanatory plan view showing a method of manufacturing a TFT array in a state where the optical head for crystallization is rotated to change the beam pitch in the laser annealing apparatus according to the first embodiment of the present invention. [ Fig. 8 ] is an explanatory diagram showing an optical head provided in a laser annealing apparatus according to a second embodiment of the present invention. [ Fig. 9 ] is a bottom view showing the output end face of the optical fiber array in the optical head of the laser annealing device according to the second embodiment of the present invention. [FIG. 10] shows the beam spot of the crystallization laser beam and the radiation of the dehydrogenation laser beam irradiated on the surface of the amorphous silicon film in the laser annealing apparatus according to the second embodiment of the present invention. A plan view of the bundle point. [ Fig. 11 ] is an explanatory diagram showing an optical head of a laser annealing apparatus according to a third embodiment of the present invention. [ Fig. 12 ] is an explanatory diagram showing an optical head of a laser annealing apparatus according to a fourth embodiment of the present invention. [ Fig. 13 ] is a configuration diagram showing the outline of a laser annealing apparatus according to a fifth embodiment of the present invention. [ Fig. 14 ] is a schematic configuration diagram showing a laser annealing apparatus according to a sixth embodiment of the present invention. [ Fig. 15 ] is a schematic configuration diagram showing a laser annealing apparatus according to a seventh embodiment of the present invention. [ Fig. 16 ] is a side view showing main parts of a laser annealing apparatus according to a seventh embodiment of the present invention. [ Fig. 17 ] is a schematic configuration diagram showing a laser annealing apparatus according to an eighth embodiment of the present invention. [ Fig. 18 ] is a schematic configuration diagram showing a laser annealing apparatus according to a ninth embodiment of the present invention. [ Fig. 19 ] is a configuration diagram of an imaging optical system in a laser annealing apparatus according to a ninth embodiment of the present invention. [ Fig. 20 ] is a schematic configuration diagram showing a laser annealing apparatus according to a tenth embodiment of the present invention. [ Fig. 21] Fig. 21 is an explanatory diagram showing a region A including the focal point and the vicinity of the focal point of the laser beam in the laser annealing apparatus according to the eleventh embodiment of the present invention, and the energy density profile maintains a top-hat shape. [ FIG. 22-1 ] is an explanatory diagram showing the relationship between the position in the radial direction of the laser beam and the power density in the region (4) in FIG. 21 . [ FIG. 22-2 ] is an explanatory diagram showing the relationship between the position in the radial direction of the laser beam and the power density in the region (2) in FIG. 21 . [ FIG. 22-3 ] is an explanatory diagram showing the relationship between the position in the radial direction of the laser beam and the power density in the region (1) in FIG. 21 . [FIG. 22-4] is an explanatory diagram showing the relationship between the position in the radial direction of the laser beam and the power density in the region (3) in FIG. 21. [FIG. [ FIG. 22-5 ] is an explanatory diagram showing the relationship between the position in the radial direction of the laser beam and the power density in the region (5) in FIG. 21 .

10: Substrate (substrate treated by laser annealing)

3A: Optical head for crystallization

3B: Optical head for dehydrogenation

22A: Optical fiber for crystallization

22B: Optical fiber for dehydrogenation

31A: Optical fiber array for crystallization

31B: Optical fiber array for dehydrogenation

32A, 32B: imaging optical system

33A, 33B: the first lens

34A, 34B: second lens

LB1: Laser beam for crystallization

LB2: Laser beam for dehydrogenation

S: scanning direction

Claims (9)

A laser annealing device comprising: a laser beam for crystallization that is processed to be continuously oscillated and converged toward a region to be modified in an amorphous silicon film formed on a substrate. An optical head for crystallization, which is used for crystallization in a state in which the most convergent light spot of the laser beam for crystallization is located inside the film of the amorphous silicon film A laser annealing device for modifying the predetermined region of the amorphous silicon film into a crystallized film by moving in the scanning direction, characterized by: Equipped with: an optical head for dehydrogenation that emits a laser beam for dehydrogenation, The optical head for dehydrogenation dehydrogenates the amorphous silicon film by irradiating at least the region to be modified with the laser beam for dehydrogenation before the laser beam for crystallization. The crystalline silicon film relatively moves along the aforementioned scanning direction. The laser annealing device as claimed in claim 1, wherein the optical head for dehydrogenation emits the laser beam for dehydrogenation that is processed to be converged by continuously oscillating laser light, and the laser beam for dehydrogenation is used in the aforementioned laser beam The most converging spot portion is located inside the aforementioned amorphous silicon film. The laser annealing device according to claim 1 or claim 2, wherein the beam spot of the aforementioned dehydrogenation laser beam irradiated on the surface of the aforementioned amorphous silicon film is arranged at a position lower than that irradiated on the aforementioned amorphous silicon film. The beam spot of the aforementioned crystallization laser beam on the surface of the film is closer to the upstream side of the aforementioned scanning direction, The width of the beam spot of the dehydrogenation laser beam is set to be longer than the width of the beam spot of the crystallization laser beam. The laser annealing device according to any one of claim 1 to claim 3, wherein the optical head for crystallization guides the laser light through the optical fiber for crystallization by the light source for crystallization, The aforementioned dehydrogenation optical head is guided by the dehydrogenation light source through the dehydrogenation optical fiber to guide the laser light. The laser annealing device according to claim 4, wherein the optical head for crystallization and the optical head for dehydrogenation are formed by a common single optical head. The laser annealing device according to any one of claim 1 to claim 3, wherein the optical head for crystallization and the optical head for dehydrogenation are formed by a common single optical head, In the aforementioned optical head, the laser light is guided by the light source through a single optical fiber, On the output end face of the aforementioned optical fiber, an aperture having an opening for crystallization and an opening for dehydrogenation is arranged so that the opening for crystallization and the opening for dehydrogenation are opposed to the output end face, The laser beam for crystallization is emitted from the opening for crystallization, and the laser beam for dehydrogenation is emitted from the opening for dehydrogenation. The laser annealing device according to claim 6, wherein the exit side of the optical fiber has an enlarged shape such that the diameter becomes larger toward the exit end face. The laser annealing device according to any one of claim 1 to claim 7, wherein the region to be modified is a channel semiconductor layer of a thin film transistor. A laser annealing method, which is directed toward a predetermined modification area in an amorphous silicon film formed on a substrate, and emits a laser beam for crystallization that is processed into a continuously oscillating laser light for convergence. In the state where the most convergent spot portion of the laser beam for crystallization is located inside the film of the amorphous silicon film, the amorphous silicon film is relatively moved toward the scanning direction to make the modification in the amorphous silicon film A laser annealing method for modifying a predetermined area into a crystallized film, characterized by: A laser beam for dehydrogenation is irradiated with at least the region to be modified in the amorphous silicon film before the laser beam for crystallization to perform dehydrogenation, scanning the amorphous silicon film toward the The direction moves relative to each other.

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