TW202243802A - Method for producing wafer - Google Patents

Abstract

The present invention is a method for producing a wafer, the method including: pressing the wafer by a holding means and bringing a first main surface of the wafer into contact with a resin; pressing and spreading the resin on the first main surface of the wafer in a state in which a second main surface of the wafer is released from holding by the holding means, by blowing air from the holding means between the holding means and the second main surface while pressing and spreading the resin on the first main surface of the wafer; separating the wafer and the holding means while blowing air; after separation of the wafer and the holding means, curing the resin to obtain a composite body including a flattened resin layer; grinding or polishing the second main surface of the wafer with the composite body being chucked using the flattened resin layer as a reference surface; and grinding or polishing the first main surface of the wafer with the second main surface of the wafer being chucked. The present invention thus provides a method for producing a wafer that makes it possible to produce a wafer that has good warp and a favorable nan otopography.

Description

Wafer Manufacturing Method

The invention relates to a wafer manufacturing method. In particular, the present invention relates to an overlay forming method and planar grinding technique capable of producing wafers with good warpage and nanometer topography.

The substrate wafer is also required to have small and good warpage, especially small and good bending, and small and good waviness of shorter wavelengths called nano-topography (hereinafter NT). As a technique for achieving the latter, there is a processing method in which one surface of a wafer is covered with a resin and ground (for example, Patent Documents 1 to 4).

For example, Patent Document 2 describes that after one side of the wafer sucked and held by the holding means presses the liquid resin to form a film of the liquid resin, air is ejected downward from the suction surface of the holding means, so that the ejection pressure of the air The wafer is pushed down from the suction surface to securely release the wafer from the holding means.

In addition, Patent Document 5 discloses a change in pressure when the distance between the pressing part and the table part is changed while ejecting gas from the suction port during assembly before resin coating. [Prior Art Literature] (patent documents)

Patent Document 1: Japanese Patent Laid-Open No. 2009-148866 Patent Document 2: Japanese Patent Laid-Open No. 2020-92161 Patent Document 3: Japanese Patent Laid-Open No. 2007-134371 Patent Document 4: Japanese Patent Laid-Open No. 2010-155298 Patent Document 5: Specification of Japanese Patent No. 5670208

[Problem to be solved by the invention]

In the method described in the aforementioned Patent Document 1, the shape of the holding means (table) at the time of resin pressing is transferred to the resin thickness distribution, which may affect the wafer shape (warpage) after processing. As a prior art, Patent Document 2 discloses a method of restoring the deformed elements of the wafer by supplying sound waves after the resin is pressed (after the wafer is separated from the upper stage as a holding means), but there is no such method in the resin Technology that suppresses the transfer of the shape of the holding means during the pressing process.

The present invention is made to solve the above problems, and its purpose is to provide a method for manufacturing a wafer, which can manufacture a wafer with good curvature and good nano-morphology. [Technical means to solve the problem]

In order to solve the above problems, the present invention provides a method for manufacturing a wafer, which is characterized in that it comprises the following steps: preparing a wafer having a first main surface and a second main surface opposite to the first main surface; Using holding means to hold the aforementioned second main face of the aforementioned wafer; Arranging the resin in a plastic state in a manner opposite to the aforementioned first main surface of the aforementioned wafer; pressing the wafer by the holding means, so that the first main surface of the wafer contacts the resin; While pressing the resin away from the first main surface of the wafer, air is sprayed from the holding means between the holding means and the second main surface, whereby the holding means will hold the wafer In the state where the holding of the aforementioned second main surface of the aforementioned wafer is released, the aforementioned resin is pressed apart on the aforementioned first main surface of the aforementioned wafer; While performing the aforementioned jetting of air, a gap is formed between the aforementioned wafer and the aforementioned holding means to separate the aforementioned wafer from the aforementioned holding means; After the aforementioned separation of the aforementioned wafer from the aforementioned holding means, the aforementioned resin is hardened to form a planarization resin layer, thereby obtaining a composite comprising the aforementioned wafer and the aforementioned first principal surface of the aforementioned wafer in contact with the aforementioned planarization resin layer. body; Adsorbing and holding the composite body with the planarizing resin layer as a reference plane, grinding or grinding the second main surface of the wafer in this state; removing the aforementioned planarizing resin layer from the aforementioned wafer; and, The second main surface of the wafer is sucked and held, and the first main surface of the wafer is ground or ground in this state.

According to the wafer manufacturing method of the present invention, the resin is pushed apart on the first main surface of the wafer in a state where the holding of the second main surface of the wafer by the holding means is released while injecting air. The wafer is separated from the holding means by spraying air, and the resin is hardened after the separation, thereby preventing the shape of the holding means from being transferred to the wafer. round.

When the wafer is separated from the holding means, the gap can be formed between the wafer and the holding means by the flow of the resin by performing a stand-by without changing the height of the holding means, And the formation of the aforementioned gap is grasped based on the load value applied to the aforementioned holding means.

For example, it is possible to separate the wafer from the holding means by standing by while spraying air without changing the height of the holding means.

Alternatively, when the aforementioned wafer is separated from the aforementioned holding means, the aforementioned gap between the aforementioned wafer and the aforementioned holding means can be formed by using the withdrawal of the aforementioned holding means.

In this way, separation of the wafer from the holding means can be performed by withdrawing the holding means from the wafer. By doing so, the gap between the wafer and the holding means can be sufficiently secured in a relatively short time. [Efficacy of the invention]

As described above, according to the wafer manufacturing method of the present invention, the transfer of the shape of the holding means to the wafer can be suppressed. wafer.

As mentioned above, it is sought to develop a wafer manufacturing method capable of manufacturing a wafer with good curvature and good nano-morphology.

The inventors of the present invention have repeatedly studied the above-mentioned problems, and as a result, it has been found that the resin is pushed apart on the first main surface of the wafer while spraying air while releasing the holding of the second main surface of the wafer by the holding means. The wafer is separated from the holding means by spraying air, and the resin is cured after the separation, thereby preventing the shape of the holding means from being transferred to the wafer. wafer, thereby completing the present invention.

That is, the present invention is a method for manufacturing a wafer, characterized in that it comprises the following steps: preparing a wafer having a first main surface and a second main surface opposite to the first main surface; Using holding means to hold the aforementioned second main face of the aforementioned wafer; Arranging the resin in a plastic state in a manner opposite to the aforementioned first main surface of the aforementioned wafer; pressing the wafer by the holding means, so that the first main surface of the wafer contacts the resin; While pressing the resin away from the first main surface of the wafer, air is sprayed from the holding means between the holding means and the second main surface, whereby the holding means will hold the wafer In the state where the holding of the aforementioned second main surface of the aforementioned wafer is released, the aforementioned resin is pressed apart on the aforementioned first main surface of the aforementioned wafer; While performing the aforementioned jetting of air, a gap is formed between the aforementioned wafer and the aforementioned holding means to separate the aforementioned wafer from the aforementioned holding means; After the aforementioned separation of the aforementioned wafer from the aforementioned holding means, the aforementioned resin is hardened to form a planarization resin layer, thereby obtaining a composite comprising the aforementioned wafer and the aforementioned first principal surface of the aforementioned wafer in contact with the aforementioned planarization resin layer. body; Adsorbing and holding the composite body with the planarizing resin layer as a reference plane, grinding or grinding the second main surface of the wafer in this state; removing the aforementioned planarizing resin layer from the aforementioned wafer; and, The second main surface of the wafer is sucked and held, and the first main surface of the wafer is ground or ground in this state.

On the other hand, Patent Documents 1 to 5 do not describe or teach to separate the wafer from the holding means by pressing the resin on the wafer while spraying air from the holding means.

Hereinafter, the present invention will be described in detail with reference to the drawings, but the present invention is not limited to these descriptions. In addition, in the drawings, the unevenness of the wafer before grinding and the warpage of the holding means are exaggeratedly drawn for explanation, but in the wafer manufacturing method of the present invention, the wafer before grinding The unevenness and the warping of the holding means are not limited to be as large as shown in the illustration.

FIG. 1 and FIG. 2 are schematic flowcharts illustrating examples of the wafer manufacturing method of the present invention, respectively. The example in Fig. 2 is the same as the example in Fig. 1 except that the steps in Fig. 2 (E) and Fig. 2 (F) are different from those in Fig. 1 (E) and Fig. 1 (F). Hereinafter, the example in FIG. 1 will be described as a representative, and only the steps in FIG. 2 (E) and FIG. 2 (F) will be described for the example in FIG. 2 .

First, as shown in FIG. 1(A), a wafer 1 having a first main surface 1A and a second main surface 1B opposite to the first main surface 1A is prepared. The prepared wafer 1 is not particularly limited.

Next, as shown in FIG. 1(B), the second main surface 1B of the wafer 1 is held by the holding means 2 . In this example, the second main surface 1B of the wafer 1 is held by vacuum suction on the upper stage 2 as holding means. Vacuum suction is performed through the through-holes 2 a penetrating the upper and lower sides of the upper platform 2 , whereby the upper platform 2 can vacuum-suction the wafer 1 .

On the other hand, as shown in FIG. 1(B), resin 5 in a plastic state is arranged to face first principal surface 1A of wafer 1 . In this example, a light-transmitting film 4 is laid on a glass platform 3 (lower platform) having a flat surface, and a plastic state, for example, liquid resin 5 is supplied thereon. The resin 5 is not particularly limited as long as it can be cured.

Next, as shown in FIG. 1(C), the wafer 1 is pressed by the holding means 2 so that the first main surface 1A of the wafer 1 is brought into contact with the resin 5 . In this example, the upper stage 2 as the holding means is lowered to push the wafer 1 held by the upper stage 2 against the resin 5 from above, so that the first main surface 1A of the wafer 1 contacts the resin 5 .

After the resin 5 comes into contact with the wafer 1, air injection is started. In this example, as shown in FIG. 1 (D), at the point where the resin 5 contacts the first main surface 1A of the wafer 1 (the position where the load applied to the upper stage 2 exceeds the set load (A)), from Air is injected between the upper platform 2 and the upper platform 2 and the second main surface 1B of the wafer 1 . The injection of air can be performed through, for example, the through-hole 2 a of the upper platform 2 .

Then, while continuing to spray air, the upper table 2 is lowered until the resin 5 is fully developed. That is, the air is sprayed while pressing the resin 5 on the first main surface 1A of the wafer 1 . Thereby, the present invention presses the resin 5 away from the first main surface 1 of the wafer 1 in a state where the holding of the second main surface 1B of the wafer 1 by the holding means 2 is released.

During the execution of the air injection, a part of the second main surface 1B of the wafer 1 may contact the upper platform 2 (for example, a point contact), but maintain a state where the holding of the second main surface 1B of the wafer 1 by the holding means 2 is released. .

By pressing the resin 5 from above while injecting air in this way, an air cushion layer is formed between the upper stage 2 and the second main surface 1B of the wafer 1, whereby the shape of the upper stage 2 can be suppressed from being transferred. to wafer 1.

Then, the descent of the upper platform 2 is stopped with the set stop load (B). In this example, the stand-by is performed without changing the height of the upper platform 2 as holding means. Air is also continuously injected during this period. Thereby, the resin 5 gradually spreads naturally, and a gap 2b is formed between the wafer 1 and the upper stage 2 as shown in FIG. 1(E). Thereby, the wafer 1 is separated from the upper stage 2 .

Then, as shown in FIG. 1(E), the resin 5 spreads naturally, and when the distance between the upper stage 2 and the wafer 1 is sufficiently ensured, the injection of air is stopped. For example, the value of the load applied to the upper platform 2 is grasped, and when the load drops to the set load (C), jetting of air is stopped.

Or, as shown in Figure 2 (E), after detecting the set stop load (B), the upper platform 2 can also be retreated (moved upward) while continuously spraying air. If the upper platform 2 is fully secured The distance from the wafer 1 stops spraying air, thereby separating the upper platform 2 from the wafer 1 and forming a gap 2b between them.

By stopping the blowing of air in a state where the gap between the wafer 1 and the upper stage 2 is sufficiently ensured, it is possible to prevent the wafer 1 and the upper stage 2 from coming into contact again due to the elasticity of the wafer 1 or the resin 5 . As a result, it is possible to more reliably prevent the shape of the upper stage 2 from being transferred to the thickness of the resin via the wafer 1 .

Then, after the wafer 1 is separated from the upper platform 2, as shown in FIG. 1 (F), the resin 5 is hardened to make a planarization resin layer 6, and the first master including the wafer 1 and the wafer 1 is obtained. Composite 10 of planarized resin layer 6 in contact with surface 1A.

In this example, since the lower platform 3 is a glass platform, by irradiating ultraviolet rays from below the lower platform 3 , the ultraviolet rays can pass through the lower platform 3 and the translucent film 4 and strike the resin 5 to harden the resin 5 . In addition, the hardening means of the resin 5 is not limited to ultraviolet irradiation, It can change suitably according to the kind of resin 5. For example, when the resin 5 is a thermosetting resin, it can also be cured by external stimuli such as heat.

In the example shown in FIG. 2, as shown in FIG. 2(E), after the wafer 1 is separated from the upper stage 2, the resin 5 is cured in the state shown in FIG. 2(F). The resin layer 6 is planarized.

Next, as shown in FIG. 1(G), the composite 10 is moved to, for example, a grinding table 20 with the flattened resin layer 6 as a reference plane, and the composite 10 is adsorbed and held. The grinding table 20 is made of, for example, porous ceramics, and can hold the composite body 10 by vacuum suction.

Next, as shown in FIG. 1(H), the second main surface 1B of the wafer 1 is ground or polished while being sucked and held by the grinding table 20 . In this example, the second main surface 1B of the wafer 1 is ground (first ground) using the grinding wheel 30 to obtain the ground second main surface 1C. For example, grinding is performed so that the total thickness variation (TTV) after grinding becomes 1 μm or less.

Next, as shown in FIG. 1 (I), the planarization resin layer 6 is removed from the wafer 1 . In this example, the translucent film 4 is also removed at the same time.

Next, as shown in FIG. 1 (J), the wafer 1 is reversed, and the ground second main surface 1C of the wafer 1 is sucked and held by the grinding table 20, and ground or polished in this state. The first main surface 1A of the wafer 1 . In this example, the grinding wheel 30 is used to grind the first main surface 1A of the wafer 1 to obtain the ground first main surface 1D.

As shown in FIG. 1(K), the wafer 1 thus obtained has a ground first main surface 1D and a ground second main surface 1C. While spraying air, the resin 5 is pushed apart on the first main surface 1A of the wafer 1 while releasing the holding of the second main surface 1B of the wafer 1 by the holding means (upper stage) 2 . The wafer 1 is separated from the holding means 2 by spraying air, and then the resin 5 is cured, whereby the wafer 1 can prevent the shape of the holding means (upper stage) 2 from being transferred to the wafer 1 . That is, it is possible to manufacture a wafer with less warpage (warpage) and good quality. In addition, the second main surface 1B is ground in a state where the flattening resin layer 6 is formed in contact with the first main surface 1A of the wafer 1, and then the wafer 1 is turned over to grind the first main surface 1A. , whereby the nano-morphology can be made smaller than the target value to make it good.

On the other hand, for example, as described below with reference to FIG. 3 , the wafer manufacturing method of the conventional example cannot manufacture a wafer with less warp and good quality.

The wafer manufacturing method of the conventional example shown in Fig. 3 as a schematic flow chart is mainly Fig. 3 (D) and the present invention shown in Fig. 1 (D) and Fig. 2 (D) as examples The wafers are manufactured differently. That is, in the conventional method shown in FIG. 3 , after the resin 5 is in contact with the wafer 1, the air is not sprayed, and the second main surface of the wafer 1 is maintained by the holding means (upper platform) 2. The resin 5 is continuously pushed apart on the first main surface 1A of the wafer 1 in the held state of the wafer 1B. As a result, as shown in FIG. 3(E), after the holding by the upper stage 2 is released, the wafer 1 on which the shape of the upper stage 2 is transferred is obtained. As a result, as shown in FIG. 3(K), the wafer 1 obtained by grinding the second main surface 1B and the first main surface 1A is greatly warped. [Example]

Hereinafter, although an Example and a comparative example are used and this invention is demonstrated concretely, this invention is not limited to these examples.

[Experimental content] (Formation of a planarization resin layer on a wafer) <Examples 1-1 to 1-4> In Examples 1-1 to 1-4, according to the same process as in Fig. 1 (A) to Fig. 1 (F), the first main surface including the wafer and the first main surface contacting the wafer was produced under the following conditions: A composite of planarized resin layers.

◇Cladding (flattening resin layer) formation conditions ･As the wafer, a P-type monocrystalline silicon wafer with a diameter of 300mm is used. ･Uses ultraviolet (UV) curable resin as resin and polyethylene terephthalate (PET) film as translucent film. ･Lay a PET film on a flat glass platform (lower platform), and drop 10ml of UV curable resin on the PET film. ･Attracts and holds the second main surface of the wafer on the ceramic stage (upper stage), and lowers it toward the above-mentioned resin, thereby pressing the resin.

･The pressing control is driven by the servo motor that keeps the upper stage, and the vacuum suction is stopped when the specified load (A) of 100N is detected, and the air injection starts. ･The upper platform is lowered while continuously injecting air, and the lowering of the upper platform is stopped with a stop load (B) of 2000N. Thereby, the resin is pushed apart on the first main surface of the wafer in a state where the holding of the second main surface of the wafer by the upper stage is released. ･By waiting while maintaining the state of injecting air, the resin spreads naturally and the load on the upper platform is reduced. Thereby, a gap is formed between the wafer and the upper platform, and the wafer is separated from the upper platform. ･When the load applied to the upper platform is reduced to the set load (C), stop spraying air. ･Ultraviolet rays are irradiated to harden the resin to create a flattened resin layer. (There is a gap between the wafer and the upper stage when irradiating ultraviolet rays) ･Here, in consideration of the influence of the transfer due to the gap between the wafer and the upper stage until the air injection is stopped, the set load (C) was set to 1500N (Example 1-1), 1000N ( 4 examples of embodiment 1-2), 500N (embodiment 1-3), 100N (embodiment 1-4). ･As a light source for resin curing, an ultraviolet light-emitting diode (UV-LED) with a wavelength of 365nm is used.

＜Comparative example 2＞ In Comparative Example 2, a composite body including a wafer and a planarizing resin layer in contact with the first main surface of the wafer was produced in accordance with the same flow as in FIG. 3 (A) to FIG. 3 (F). Specifically, the pressing control was changed from Example 1-1 to the following.

･The push control is driven by the servo motor that keeps the upper platform, and stops the upper platform from descending with a stop load (B) of 2000N. During this period, no air is injected, and the resin is pushed apart on the first main surface of the wafer while the wafer is held on the above platform. ･Then, the vacuum suction stops and the air jet starts. ･The upper platform is raised and stopped, further stopping the injection of air. Thereby, a gap is formed between the wafer and the upper platform. ･Ultraviolet rays are irradiated to harden the resin to create a flattened resin layer. (There is a gap between the wafer and the upper stage when irradiating ultraviolet light) ･A UV-LED with a wavelength of 365nm is used as the light source for resin curing.

<Examples 2-1 to 2-3> In Examples 2-1 to 2-3, according to the same flow as in Fig. 2 (A) to Fig. 2 (F), a flattening resin including a wafer and the first main surface of the wafer was produced. layer complex. Specifically, the pressing control was changed from Example 1-1 to the following.

･The pressing control is driven by the servo motor that keeps the upper stage, and the vacuum suction is stopped when the specified load (A) of 100N is detected, and the air injection starts. ･The upper platform is lowered while continuously injecting air, and the lowering of the upper platform is stopped with a stop load (B) of 2000N. Thereby, the resin is pushed apart on the first main surface of the wafer in a state where the holding of the second main surface of the wafer by the upper stage is released. ･Then, while continuing to spray air, raise the upper platform by a predetermined distance L and stop it, then stop spraying air. Thereby, a gap is formed between the wafer and the upper platform. ･Ultraviolet rays are irradiated to harden the resin to create a flattened resin layer. (There is a gap between the wafer and the upper stage when irradiating ultraviolet light) ･Here, considering the effect of transfer due to the gap between the wafer and the upper stage, the above-mentioned predetermined distance L was set to 2 μm (Example 2-1), 5 μm (Example 2-2) , 3 examples of 10 μm (Example 2-3). ･A UV-LED with a wavelength of 365nm is used as the light source for resin curing.

(grinding) ＜Comparative example 1＞ In Comparative Example 1, the same P-type single crystal silicon wafer with a diameter of 300 mm as used in Example 1-1 was prepared, and the wafer was ground under the following conditions.

<Examples 1-1 to 1-4, Comparative Example 2, Examples 2-1 to 2-3> In Examples 1-1 to 1-4, Comparative Example 2, and Examples 2-1 to 2-3, grinding was carried out on the previously produced composites under the following conditions.

◇Grinding conditions ･For the grinding process, DFG8360 (trade name) manufactured by Disco Co., Ltd. was used. ･Use a grinding wheel combined with diamond abrasive grains as the grinding wheel. The subsequent grinding method differs from the other examples (<Comparative Example 2>, <Examples 1-1 to 1-4>, <Examples 2-1 to 2-3>) in <Comparative Example 1> , so record them individually.

＜Comparative example 1＞ The first grinding condition (back (second main surface) grinding) ･The front (first main surface) side of the wafer is vacuum-adsorbed on the grinding table, and the back surface (second main surface) is ground. (without planarizing resin layer)

Second grinding condition (surface (first main surface) grinding) ･The first grinding surface (second main surface after grinding) is vacuum-adsorbed on the grinding table, and the surface (first main surface) is ground. ･By adjusting the axis angle of the chuck table, it is adjusted so that the wafer thickness deviation becomes 1 μm or less.

<Comparative Example 2>, <Examples 1-1 to 1-4>, <Examples 2-1 to 2-3> The first grinding condition (back (second main surface) grinding) ･On the cover (flattened resin layer) side of the vacuum adsorption composite, the back (second main surface) is ground. ･Peel off the flattening resin layer after grinding.

Second grinding condition (surface (first main surface) grinding) ･The first grinding surface (second main surface after grinding) is vacuum-adsorbed on the grinding table, and the surface (first main surface) is ground. ･By adjusting the axis angle of the chuck, it is adjusted so that the wafer thickness deviation becomes 1 μm or less.

(Mirror Polishing) Mirror grinding is performed on the front and back surfaces (first and second main surfaces after grinding) of each wafer that has been ground in the above manner.

[The measurement results] After mirror grinding, the bow and nanotopography (NT) of each wafer were determined in the following manner.

An optical interference-type flatness/NT measuring device (manufactured by KLA Corporation: trade name WaferSight2+) was used for the measurement of curvature and NT. As an index of NT, square millimeter (SQMM) 2mm×2mm is used. The results are shown in Table 1 below.

[Table 1]

In Comparative Example 1, since grinding was performed so as not to form a flattening resin layer, both warpage and NT were unfavorable.

In Comparative Example 2, although the grinding was performed by forming a flattening resin layer, NT was good, but since the resin was continuously pressed on the first main surface of the wafer while maintaining the state of holding by the upper stage, Open, so the transfer of the terrace shape occurs, making the bending bad.

On the other hand, in Examples 1-1, 1-2, 1-3, and 1-4, while spraying air, the first main body of the wafer is released in a state where the holding by the upper stage is released. The resin was pushed apart on the surface, and the resin was cured while the upper stage was separated from the wafer to form a planarization resin layer, thereby relieving the transfer of the stage shape and improving warpage compared to Comparative Example 2.

In particular, in Examples 1-3 and 1-4 in which the air injection stop load was set to 500 N or less, the gap between the wafer and the upper stage was sufficiently secured when the air injection was stopped, thereby further improving bowing.

Also, on the other hand, in Examples 2-1, 2-2, and 2-3, while spraying air, the first main surface of the wafer is released in a state where the holding by the upper stage is released. The resin was pressed apart, and the resin was cured while the upper stage was separated from the wafer to form a planarization resin layer, thereby relieving the transfer of the stage shape and improving warpage compared to Comparative Example 2.

In addition, especially in Examples 2-2 and 2-3, in which the distance to retract the upper stage during the air injection process was set to 5 μm or more, the gap between the wafer and the upper stage was sufficiently ensured when the air injection was stopped, so Further improved bending.

From the above results, it can be seen that when forming the planarizing resin layer, while spraying air, the resin is pushed apart on the first main surface of the wafer while the holding by the upper stage is released, and the upper stage and the wafer are separated. The planarization resin layer is formed by curing the resin while the circles are separated, thereby preventing transfer of the plateau shape.

It was further found that when the upper stage is separated from the wafer by making the upper stage stand by, it is more desirable to set the load when the air injection is stopped to 500N or less.

In addition, it can be seen that from the viewpoint of shortening the processing time, it is preferable to retract the upper stage during air injection, and it is more preferable to set the distance of retracting the upper stage at 5 μm or more.

In addition, this invention is not limited to the said embodiment. The above-mentioned embodiments are examples, and any one having substantially the same configuration as the technical idea described in the claims of the present invention and exerting the same effects is included in the technical scope of the present invention.

1: Wafer 1A, 1D: the first main surface 1B, 1C: the second main surface 2: Keep the means (on the platform) 2a: Through hole 2b: Clearance 3: Glass platform (lower platform) 4: Translucent film 5: Resin 6: Flattening the resin layer 10: Complex 20: Grinding table 30: grinding wheel

FIG. 1 is a schematic flow chart showing an example of the wafer manufacturing method of the present invention. FIG. 2 is a schematic flowchart showing another example of the wafer manufacturing method of the present invention. FIG. 3 is a schematic flowchart showing an example of a conventional wafer manufacturing method.

Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

1: Wafer

1A, 1D: the first main surface

1B, 1C: the second main surface

2: Keep the means (on the platform)

2a: Through hole

2b: Clearance

3: Glass platform (lower platform)

4: Translucent film

5: Resin

6: Flattening the resin layer

10: Complex

20: Grinding table

30: grinding wheel

Claims (3)

A method for manufacturing a wafer, characterized in that it comprises the following steps: preparing a wafer having a first main surface and a second main surface opposite to the first main surface; Using holding means to hold the aforementioned second main face of the aforementioned wafer; Arranging the resin in a plastic state in a manner opposite to the aforementioned first main surface of the aforementioned wafer; pressing the wafer by the holding means, so that the first main surface of the wafer contacts the resin; While pressing the resin away from the first main surface of the wafer, air is sprayed from the holding means between the holding means and the second main surface, whereby the holding means will hold the wafer In the state where the holding of the aforementioned second main surface of the aforementioned wafer is released, the aforementioned resin is pressed apart on the aforementioned first main surface of the aforementioned wafer; While performing the aforementioned jetting of air, a gap is formed between the aforementioned wafer and the aforementioned holding means to separate the aforementioned wafer from the aforementioned holding means; After the aforementioned separation of the aforementioned wafer from the aforementioned holding means, the aforementioned resin is hardened to form a planarization resin layer, thereby obtaining a composite comprising the aforementioned wafer and the aforementioned first principal surface of the aforementioned wafer in contact with the aforementioned planarization resin layer. body; Adsorbing and holding the composite body with the planarizing resin layer as a reference plane, grinding or grinding the second main surface of the wafer in this state; removing the aforementioned planarizing resin layer from the aforementioned wafer; and, The second main surface of the wafer is sucked and held, and the first main surface of the wafer is ground or ground in this state. The wafer manufacturing method according to claim 1, wherein when the wafer is separated from the holding means, the flow of the resin is used to wait for the wafer without changing the height of the holding means. The gap is formed between the wafer and the holding means, and the formation of the gap is grasped based on the value of the load applied to the holding means. The wafer manufacturing method according to claim 1, wherein when the wafer is separated from the holding means, the holding means is retracted to form the gap between the wafer and the holding means.

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