TW202238279A - Exposure apparatus, exposure method and method for manufacturing article facilitate accuracy of joint exposure - Google Patents
Exposure apparatus, exposure method and method for manufacturing article facilitate accuracy of joint exposure Download PDFInfo
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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Abstract
Description
本發明涉及曝光裝置、曝光方法及物品之製造方法。The present invention relates to an exposure device, an exposure method and a manufacturing method of an article.
在液晶面板、有機EL顯示器或半導體裝置等的製造,使用一面使基板與原版同步而移動一面經由投影光學系統將原版的圖案曝光於塗佈有抗蝕層的基板的掃描型的曝光裝置。近年來,為了應對於伴隨基板的大型化之曝光區域的大面積化,現今需要透過1次的掃描曝光在比被轉印原版的圖案的區域(部分區域)大的區域形成圖案。該方法方面,在日本特開平11-317366號公報,已提出透過了聯合曝光之曝光方法,該聯合曝光為使複數個部分區域在與掃描方向正交的非掃描方向上重複而進行曝光者。In the manufacture of liquid crystal panels, organic EL displays, semiconductor devices, etc., a scanning type exposure apparatus is used that exposes a pattern of the original plate to a substrate coated with a resist layer through a projection optical system while moving the substrate in synchronization with the original plate. In recent years, in order to cope with the enlargement of the exposure area accompanying the increase in the size of the substrate, it is now necessary to form a pattern in an area larger than the area (partial area) where the pattern of the original plate is transferred by one scanning exposure. In terms of this method, Japanese Patent Application Laid-Open No. 11-317366 proposes an exposure method through joint exposure in which a plurality of partial regions are repeatedly exposed in a non-scanning direction perpendicular to the scanning direction.
在進行聯合曝光之際,減小相鄰的部分區域重複的聯合區域內的累積曝光量的變異性為重要。於日本特開2017-053888號公報,已揭露以下內容:在投影光學系統與原版之間配置可調整照明形狀的可變縫,調整通過可變縫的光量,從而可使在聯合區域之累積曝光量為均勻。When joint exposure is performed, it is important to reduce the variability in cumulative exposure in the joint area where adjacent partial areas overlap. In Japanese Patent Laid-Open No. 2017-053888, the following content has been disclosed: a variable slit that can adjust the shape of the illumination is arranged between the projection optical system and the original plate, and the amount of light passing through the variable slit is adjusted, so that the cumulative exposure in the combined area can be adjusted. The amount is uniform.
[發明所欲解決之課題][Problem to be Solved by the Invention]
然而,即便使用記載於日本特開2017-053888號公報的可變縫,只要未配置為調整可變縫的調整部對應於在聯合區域的非掃描方向上的中間位置,即無法完全使聯合區域內的累積曝光量的變異性為均勻。此外,聯合區域因生產的面板的布局而定,故無法定位為使調整部的位置在全部的布局皆成為最佳。雖透過增加調整部的數量從而可一定程度應對於多樣的布局,惟存在配置空間等的約束。因此,在使用可變縫的情況下,仍在會聯合區域內的累積曝光量方面產生變異性,存在曝光的精度降低之虞。However, even if the variable seam described in Japanese Patent Application Laid-Open No. 2017-053888 is used, as long as the adjustment part that is not configured to adjust the variable seam corresponds to the intermediate position in the non-scanning direction of the joint area, the joint area cannot be fully adjusted. The variability within the cumulative exposure is uniform. In addition, the joint area depends on the layout of the panel to be produced, so it cannot be positioned so that the position of the adjustment part is optimal in all layouts. Although it is possible to cope with various layouts to a certain extent by increasing the number of adjustment parts, there are constraints such as configuration space. Therefore, even when the variable slit is used, variability occurs in the cumulative exposure amount in the joint area, and there is a possibility that the accuracy of exposure may be lowered.
於是,本發明目的在於提供在聯合曝光的精度方面有利的曝光裝置。 [解決課題之技術手段] Therefore, an object of the present invention is to provide an exposure apparatus that is advantageous in the precision of combined exposure. [Technical means to solve the problem]
為了達成前述目的,作為本發明的一方案的曝光裝置為一曝光裝置,其進行以來自光源的光對原版進行照明並一面使基板移動於掃描方向一面將前述原版的圖案對前述基板進行曝光的掃描曝光,以被透過第1曝光而曝光的區域與被透過第2曝光而曝光的區域局部地重複的方式進行聯合曝光,前述曝光裝置具有:投影光學系統,其將前述原版的圖案投影於前述基板;遮光板,其將在前述第1曝光及前述第2曝光中的至少一者之曝光光的一部分進行遮光;以及複數個調整部,其等對前述遮光板施力而調整被透過該遮光板進行遮光的光量;前述複數個調整部在未施力於前述遮光板的狀態下相對於通過前述投影光學系統的光軸且沿著前述掃描方向的直線被配置為非對稱。 本發明的進一步的特徵將由以下之實施方式(在參照圖式之下)而趨於清楚。 In order to achieve the aforementioned object, an exposure device as an aspect of the present invention is an exposure device that illuminates a master plate with light from a light source and exposes a pattern of the master plate to the substrate while moving the substrate in a scanning direction. In scanning exposure, joint exposure is performed in such a manner that the area exposed by the first exposure and the area exposed by the second exposure partially overlap, and the exposure device has a projection optical system for projecting the pattern of the original plate on the a substrate; a light-shielding plate that shields a part of the exposure light in at least one of the first exposure and the second exposure; The amount of light shielded by the plate; the plurality of adjustment parts are arranged asymmetrically with respect to a straight line passing through the optical axis of the projection optical system and along the scanning direction in a state where no force is applied to the light shielding plate. Further features of the present invention will become apparent from the following embodiments (below referring to the drawings).
於以下,基於圖式而詳細說明本發明的優選實施方式。另外,各圖中,就相同的構件標注相同的參考符號,重複的說明省略。Hereinafter, preferred embodiments of the present invention will be described in detail based on the drawings. In addition, in each figure, the same reference numerals are assigned to the same members, and overlapping descriptions are omitted.
<第1實施方式> 就本實施方式中的曝光裝置的構成進行說明。本實施方式中的曝光裝置為用於是半導體裝置、FPD等的裝置的製程之光刻程序的光刻裝置。本實施方式中的曝光裝置進行經由具有形成有圖案的面的原版而對基板進行曝光並將原版的圖案轉印於基板的曝光處理。 <First Embodiment> The configuration of the exposure apparatus in this embodiment will be described. The exposure apparatus in this embodiment is a photolithography apparatus used for a photolithography process in the process of manufacturing devices such as semiconductor devices and FPDs. The exposure apparatus in this embodiment performs an exposure process of exposing a substrate through an original plate having a surface on which a pattern is formed, and transferring the pattern of the original plate to the substrate.
圖1為本實施方式中的曝光裝置100的示意圖。在本實施方式,以平行於投影光學系統4的光軸的方向為Z方向且以垂直於此Z軸向的任意的平面為XY平面而定義座標系。此外,將以曝光裝置100進行掃描曝光之際使基板16移動的掃描方向定義為Y方向,將相對於掃描方向而正交的非掃描方向定義為X方向。FIG. 1 is a schematic diagram of an
曝光裝置100具有照明光學系統1、檢測原版3與基板16的對準標記的對準觀測器2、原版載台27、投影光學系統4、曝光量調整板19、基板台17、控制部20、取得部26。照明光學系統1例如可包含光源5、聚焦透鏡6及8、蠅眼透鏡7、狹縫9(遮光板)、成像光學系統10、平面鏡11。光源5例如可包含水銀燈與橢圓鏡。狹縫9設於光源5與原版3之間,從光源5射出的光之中僅使入射於狹縫的開口部的光透射,界定照明範圍。成像光學系統10包含複數個反射鏡,並被配置為使通過狹縫9的光成像於原版3。平面鏡11在照明光學系統1中使光路徑彎曲。The
投影光學系統4透過照明光學系統1將被保持於原版載台27的原版3的圖案投影於被保持於基板台17的基板16上。原版3被配置於投影光學系統4的物面的位置,基板16被配置於投影光學系統4的像面的位置。本實施方式中的投影光學系統4可為將原版3的圖案以等倍投影於基板16的等倍成像光學系統,亦可為放大成像光學系統、縮小成像光學系統。The projection
被透過照明光學系統1照明的原版3的圖案經由投影光學系統4的第1平行平板13a、平面鏡14、凹面鏡12、凸面鏡15、凹面鏡12、平面鏡14,然後經由第2平行平板13b而成像於基板16。在用於驅動基板16的基板台17配置就曝光量進行計測的光量感測器18(檢測部)。The pattern of the
曝光量調整板19被設於投影光學系統4與基板16之間,並被設為將從投影光學系統4射出的光的一部分進行遮光。曝光量調整板19例如可被以金屬而構成。曝光量調整板19具有可動於非掃描方向(X方向)上的機構,構成為可對曝光量進行控制。控制部20包含CPU、記憶體,並進行曝光裝置100整體的控制。The exposure
在本實施方式中的曝光裝置100,設想透過被稱為聯合曝光的曝光模式對基板16進行曝光。圖2為用於說明聯合曝光的程序的圖。
圖2(a)為就在基板16之第1曝光區域22a被曝光的程序(第1曝光)進行繪示的圖。在圖2(a),一面使原版3與基板16同步而移動於掃描方向(Y方向),一面透過曝光光23對第1曝光區域22a進行曝光。
In the
圖2(b)為就第1曝光區域22a被曝光後的程序(第2曝光)進行繪示的圖。在圖2(b),使原版3與基板16同步而移動於非掃描方向(X方向)。此時,曝光不被執行。使原版3與基板16往非掃描方向移動的移動量方面,決定為第1曝光區域22a與在下個曝光被曝光的第2曝光區域之間不產生不會被曝光的區域,一部分重疊。FIG. 2( b ) is a diagram illustrating a procedure (second exposure) after the
圖2(c)為就在基板16之第2曝光區域22b被曝光的程序進行繪示的圖。在圖2(c),一面使原版3與基板16同步而移動於掃描方向(Y方向),一面透過曝光光23對第2曝光區域22b進行曝光。此處,第2曝光區域22b被以一部分與第1曝光區域22a重疊的方式曝光,故形成在第1曝光區域22a與第2曝光區域22b部分地重複的聯合區域24(在聯合曝光重複被曝光的區域)。此外,在本實施方式,只要為複數次掃描曝光即可,不限於2次掃描曝光,亦可透過3次以上的掃描曝光進行曝光。FIG. 2( c ) is a diagram illustrating a procedure for exposing the
圖2(d)為就透過聯合曝光而曝光的累積曝光量進行繪示的圖。累積曝光量為曝光於基板的曝光量的累積值。在圖2(d),示出在第1曝光區域22a及第2曝光區域22b的Y方向上的一處之非掃描方向(X方向)上的累積曝光量。圖形的縱軸為累積曝光量,橫軸表示X方向上的位置。在第1曝光與第2曝光,在聯合區域24重複進行曝光,故要使被曝光的區域的累積曝光量為均勻,需要使在聯合區域24之曝光量降低。例如,在投影光學系統4與基板16之間的光路徑插入曝光量調整板19於非掃描方向(X方向),從而可使在聯合區域24之曝光量降低。控制部20控制曝光量調整板19的驅動。在聯合區域24之曝光量可透過曝光量調整板19的驅動的大小從而調整。曝光量調整板19透過延伸於相對於掃描方向(Y方向)而交叉的方向之邊緣,從而可使在第1曝光與第2曝光被曝光的聯合區域24的累積曝光量為與聯合區域24以外的區域相同程度。FIG. 2( d ) is a graph plotting the cumulative exposure amount exposed by combined exposure. The accumulated exposure amount is an accumulated value of the exposure amount exposed to the substrate. In FIG. 2( d ), the cumulative exposure amount in the non-scanning direction (X direction) at one point in the Y direction of the
然而,在透過了曝光量調整板19之調整,在聯合區域24的累積曝光量含有二次的成分的情況下,無法在聯合區域24的全區校正為均勻的值。例如,無法將如示於圖2(d)的累積曝光量的分布校正為均勻。在本實施方式,說明有關為了將累積曝光量的分布調整為均勻而透過構成為可使狹縫9的形狀變形從而將在聯合區域24之累積曝光量調整為均勻的方法。However, when the cumulative exposure amount of the combined
在聯合曝光,可對比能以1次掃描曝光進行曝光的範圍更廣的範圍的區域進行曝光。為此,例如可在生產大畫面的液晶面板、有機EL面板之際成為有利的技術。然而,由於形成聯合區域24,故在聯合區域24與其以外的區域需要抑制累積曝光量的變異性,或需要抑制在聯合區域24內的累積曝光量的變異性。In the joint exposure, it is possible to expose a wider area than can be exposed with one scanning exposure. For this reason, it becomes an advantageous technique when producing a large-screen liquid crystal panel or an organic EL panel, for example. However, since the combined
圖3為就可局部地調整曝光量的可變縫21進行繪示的圖。圖3(a)為就本實施方式的比較例進行繪示的圖,可變縫21的複數個調整部21c被配置為左右對稱。圖3(b)為就本實施方式的可變縫21的構成進行繪示的圖,複數個調整部21c被配置為左右非對稱。FIG. 3 is a diagram illustrating the variable slit 21 capable of locally adjusting the exposure amount. FIG. 3( a ) is a diagram illustrating a comparative example of the present embodiment, and a plurality of
可變縫21被應用於狹縫9(遮光板)。可變縫21由可變片件21a與固定片件21b構成。可變片件21a具有排列於X方向的複數個調整部21c(L1~5、X0、R1~5),各個調整部21c推拉可變片件21a從而調整在各位置的縫寬(可變片件21a與固定片件21b間的寬)。亦即,對可變縫21施力而使可變縫21變形,從而調整開口21d的形狀。開口21d為可變片件21a與固定片件21b間的空間,光通過開口21d,從而可將照明於原版3的照明區域界定為開口21d的形狀。本實施方式中的調整部21c(L1~5及R1~5)在未施力於可變縫21的狀態下,相對於通過狹縫中心並沿著掃描方向(Y方向)的直線被配置為非對稱。此處,狹縫中心例如為投影光學系統4的光軸。The variable slit 21 is applied to the slit 9 (shading plate). The
於圖3(a),使相鄰的2個調整部21c(L1~L5或R1~R5)之間隔為A。與聯合區域之中心位置的差方面,選擇調整部21c(L1~L5)的情況與選擇調整部21c(R1~R5)的情況皆為相同的量。例如,聯合區域之中心位置為圖3(a)的以方形表示的位置的情況下,選擇調整部21c(L4)或選擇調整部21c(R4)時,差皆為A/2。因此,圖3(a)的情況下,於非掃描方向(X方向),聯合區域24之中心位置與調整部的距離最大會偏差A/2。In FIG. 3( a ), the interval between two
另一方面,於圖3(b),選擇調整部21c(L1~L5)的情況及選擇調整部21c(R1~R5),與聯合區域之中心位置的差不同。於圖3(b),使相鄰的2個調整部21c(L1~L5或R1~R5)之間隔為A,將以開口21d之中心(X0的位置)為基準而與調整部21c(L1~L5)對稱的位置以黑圈表示。在本實施方式,配置為一調整部21c(R1~5)的配置成為另一調整部21c(L1~5)的位置之中間位置(黑圈與黑圈之中間位置)。在圖3(b),例如聯合區域之中心位置為以圖3(b)的方形表示的位置的情況下,選擇調整部21c(L5)或選擇調整部21c(R5)時,差會不同。選擇調整部21c(L5)的情況下,與聯合區域之中心位置的差成為3A/4,選擇調整部21c(R5)的情況下,與聯合區域之中心位置的差成為A/4。亦即,在圖3(b),選擇靠近的調整部從而可將與聯合區域之中心位置的差最大抑制為A/4的偏差。另外,選擇調整部21c(L4)的情況亦與聯合區域之中心位置的差成為A/4,故亦可選擇調整部21c(L4)。亦即,選擇與聯合區域之中心位置最近的調整部即可。On the other hand, in FIG. 3( b ), the difference between the center position of the joint region and the case of selecting the
此處,說明有關在非掃描方向(X方向)上使聯合區域24之中心位置與調整部21c的距離為最小使得在聯合區域24之曝光精度提升的理由。如以圖2(d)示出,聯合區域24的累積曝光量的分布具有二次形狀的情況下,將調整部21c進行調整從而可消除累積曝光量的二次成分。
此時,累積曝光量的二次成分在聯合區域24之中心位置具有峰值。調整對應於二次形狀的峰位的位置或靠近其之位置的調整部21c,從而可更有效地除去累積曝光量的二次成分。
Here, the reason for improving the exposure accuracy in the
例如,假設是複數個調整部之中就在第1曝光對聯合區域24進行曝光的曝光量進行調整的調整部與聯合區域24的形成預定位置的非掃描方向(X方向)上的中心位置的位置座標的距離的第1距離。此外,假設是複數個調整部之中就在第2曝光對聯合區域24進行曝光的曝光量進行調整的調整部與聯合區域24的形成預定位置的非掃描方向(X方向)上的中心位置的位置座標的距離的第2距離。並且,比較第1距離與第2距離。第1距離比第2距離小的情況下,在第1曝光調整曝光於聯合區域24的曝光量,第2距離比第1距離小的情況下,在第2曝光調整曝光於聯合區域24的曝光量,從而可有效地除去累積曝光量的二次成分。For example, it is assumed that the adjustment unit that adjusts the exposure amount for exposing the
此處,二次成分表示在聯合區域24之非掃描方向(X方向)上的曝光量分布的形狀包含曲線,除去二次成分,使得在聯合區域24之非掃描方向(X方向)上的曝光量分布的形狀從曲線成為直線。於本實施方式,複數個調整部被控制為聯合區域24的曝光量分布的形狀從曲線成為直線。Here, the secondary component means that the shape of the exposure distribution in the non-scanning direction (X direction) of the combined
在聯合區域24之累積曝光量具有二次成分的理由方面,例如光學構件的製造時的誤差可能為主因。例如,用於成像光學系統10的反射鏡的製造誤差為主因。本實施方式中照明於原版3的照明形狀為圓弧的情況下,用於成像光學系統10的反射鏡被研磨於沿著圓弧形狀的方向。使用研磨於沿著圓弧形狀的方向的反射鏡,使得存在沿著照明形狀的掃描方向(Y方向)發生照度不均之虞。於掃描方向(Y方向)存在照度不均的情況下,累積曝光量成為曝光量變大之處與變小之處的累積值,故累積曝光量變均勻,在圓弧形狀的照明區域之中大部分不會成為問題。The reason why the cumulative exposure amount of the
然而,在圓弧形狀的照明區域的端部(曝光量調整板19的邊緣附近的照明區域),存在曝光量變大之處被遮光而僅曝光量變小之處累積於聯合區域24之虞。或者,存在曝光量變小之處被遮光而僅曝光量變大之處累積於聯合區域24之虞。如此的情況下,於聯合區域24,累積曝光量不會變均勻,成為顯示如在聯合區域24之中心具有峰值的二次形狀的累積曝光量的分布的結果。However, at the end of the arc-shaped illumination area (illumination area near the edge of the exposure level adjustment plate 19 ), the portion where the exposure amount is increased may be blocked and only the portion where the exposure amount is decreased may be accumulated in the
在本實施方式,選擇為調整部21c對應於聯合區域24之中心附近,故有效地除去在累積曝光量的分布之二次成分,使得可有效地減低聯合區域24的累積曝光量的變異性。此外,為了最大限度使聯合曝光的精度提升,使調整部21c為左右非對稱的配置,選擇以其中一方校正二次成分,從而可使聯合曝光的精度提升。在圖3,雖相對於一調整部將相反側的調整部的配置全部配置於個別的對稱位置之中間,惟不使用於聯合區域的調整部21c(例如,開口21d之中心附近的R1與L1)亦可配置於成為左右對稱的位置。此外,以可變縫21界定的曝光光的形狀可為圓弧形狀,亦可為矩形。In this embodiment, the
接著,就說明有關在執行聯合曝光之際將複數個調整部21c之中那個調整部予以驅動的決定方法及調整部的驅動量的決定方法進行說明。取得部26取得被透過使用者輸入於輸入裝置(未圖示)的要生產的面板的布局等的資訊。據此,取得部26可取得形成聯合區域24的預定的區域的位置資訊。形成聯合區域24的預定的區域的位置資訊例如指非掃描方向(X方向)上的聯合區域24之中間位置的座標。可透過取得部26取得聯合區域24全區的座標,透過控制部20算出在非掃描方向(X方向)上的聯合區域24之中間位置的座標。Next, a method of determining which adjustment unit to drive among the plurality of
控制部20基於聯合區域24的位置資訊而決定在第1曝光及第2曝光被曝光的聯合區域24中進行遮光的光量,將曝光量調整板19予以驅動於非掃描方向(X方向)為將光路徑的一部分進行遮光。此外,為了決定調整部21c的驅動量,以光量感測器18就曝光量分布進行計測。具體而言,將基板台17逐次予以步進於非掃描方向(X方向),以光量感測器18檢測光量。透過了光量感測器18之曝光量分布的計測可在進行聯合曝光前每次執行,亦可在變更了要生產的面板的布局的時序、從前次的計測經過了既定時間的時序執行。The
參照圖4,說明有關在本實施方式中的聯合曝光中使聯合區域24的累積曝光量為均勻的方法。在圖4,說明有關透過第1曝光與第2曝光的2次的掃描曝光進行聯合曝光之例。另外,在以下的說明之曝光量調整板19,曝光量調整板19a與曝光量調整板19b被夾著光路徑而設為不同形體。Referring to FIG. 4 , a description will be given of a method for making the cumulative exposure amount of the combined
圖4(a)為就曝光區域24的位置與在第1曝光的可變縫21的位置及曝光量調整板19a的位置的對應進行繪示的圖。在第1曝光將曝光量調整板19a予以驅動於非掃描方向(X方向),調整為聯合區域24的曝光量成為0%~100%的連續的曝光量分布。圖4(b)為就曝光區域24的位置與在第2曝光的可變縫21的位置及曝光量調整板19b的位置的對應進行繪示的圖。
在第2曝光將曝光量調整板19b予以驅動於非掃描方向(X方向),調整為聯合區域24的曝光量成為0%~100%的連續的曝光量分布。此外,參照圖4(a)與圖4(b),曝光區域24的非掃描方向(X方向)上的中間位置相當於R3的位置的調整部。因此,將R3的位置的調整部予以驅動,從而校正為除去累積曝光量分布的二次形狀。
FIG. 4( a ) is a diagram showing the correspondence between the position of the
圖4(c)為就被透過聯合曝光而曝光的區域與在一Y座標位置的非掃描方向(X方向)上的位置及累積曝光量的圖形進行繪示的圖。圖形的縱軸為累積曝光量,橫軸為非掃描方向(X方向)上的位置。圖形內的點線為透過光量感測器18事前進行了曝光量分布的計測的結果,顯示二次形狀的累積曝光量分布。控制部20算出二次形狀的累積曝光量的校正量,決定R3的位置的調整部及關聯於校正的R3的位置的周邊的調整部的驅動量。如示於圖4(c)般聯合區域24的累積曝光量比其他區域的累積曝光量小的情況下,對調整部進行調整於加寬開口21d的方向,使得如累積曝光量以圖4(c)的圖形的實線表示般在聯合區域24亦可均勻地曝光。FIG. 4( c ) is a diagram illustrating a region exposed by joint exposure, a position in a non-scanning direction (X direction) at a Y coordinate position, and a pattern of cumulative exposure. The vertical axis of the graph is the cumulative exposure, and the horizontal axis is the position in the non-scanning direction (X direction). The dotted line in the graph is the result of measuring the exposure amount distribution in advance through the
說明有關以曝光裝置100執行聯合曝光的順序。圖5為就透過了本實施方式中的聯合曝光之處理方法進行繪示的流程圖。控制部20控制曝光裝置100的各部分,從而執行在以下說明的各步驟。A description will be given of the procedure for performing joint exposure with the
在步驟S501,取得部26取得依被曝光於基板16的曝光區域的布局而形成聯合區域24的預定的位置資訊。取得的位置資訊例如為非掃描方向(X方向)上的聯合區域24的形成預定位置之中間位置的座標。In step S501 , the
在步驟S502,為了基於在步驟S501取得的聯合區域24的位置資訊而調整聯合區域24的累積曝光量,控制部20將曝光量調整板19予以驅動。此外,將曝光量調整板19予以驅動之際,透過光量感測器18取得曝光量分布。聯合區域24的累積曝光量透過在第1曝光的累積曝光量與在第2曝光的累積曝光量的和而算出。使用在前次的聯合區域的計測資訊而進行本次的聯合區域的情況下,步驟S502被省略。In step S502 , the
在步驟S503,選擇予以驅動的調整部21c,決定被選擇的調整部21c的驅動量。予以驅動的調整部21c被基於在步驟S501取得的聯合區域24的位置資訊與調整部21c被配置的位置而選擇。基於事前記憶於控制部20的調整部21c的各軸的位置座標,與形成的預定的聯合區域24的非掃描方向(X方向)上的中間位置的位置座標最近的調整部被透過控制部20而判定。控制部20決定被選擇的調整部及其周邊的調整部(例如,被鄰接於被選擇的調整部而配置的調整部)的驅動量。In step S503, the
在上述的說明,雖說明有關調整部21c被控制為除去曝光分布的二次成分(亦即,將二次形狀的曝光分布校正為一次形狀的分布)之例,惟僅以此無法說是在聯合區域24之累積曝光量已被校正為均勻。需要調整部21c控制為亦除去一次成分而非僅二次成分。在以下,說明有關除去一次成分之例。In the above description, although the example in which the
此處,一次成分表示包含在聯合區域24之非掃描方向(X方向)上的曝光量分布的直線成分,除去二次及一次成分,使得在聯合區域24之非掃描方向(X方向)上的曝光量分布的形狀成為無傾斜的直線。於本實施方式,複數個調整部被控制為聯合區域24的曝光量分布的形狀成為無傾斜的直線,使得聯合區域24被均勻地曝光。Here, the primary component represents the linear component of the exposure distribution in the non-scanning direction (X direction) of the
在步驟S502,將與為了除去二次成分而選擇的調整部屬相反的位置的調整部予以驅動,從而使累積曝光量為均勻。亦即,圖4(a)中在第1曝光選擇R3的位置的調整部於二次形狀的校正的情況下,在第2曝光控制位於與R3的位置相反側的調整部,從而可除去一次成分。具體而言,將對曝光區域24的曝光量造成影響的L2~L5的調整部按固定量予以驅動,從而可進行一次成分的除去。In step S502, the adjustment unit at the position opposite to the adjustment unit selected for removing the secondary component is driven so that the cumulative exposure amount becomes uniform. That is, in Fig. 4(a), in the case where the adjustment unit at the position of R3 is selected in the first exposure for secondary shape correction, the second exposure controls the adjustment unit at the opposite side to the position of R3, thereby eliminating the primary Element. Specifically, the primary components can be removed by driving the adjustment units of L2 to L5 that affect the exposure amount of the
此外,於本實施方式,亦可將屬於與為了除去二次成分而選擇的調整部(R3的位置的調整部)相同的位置的調整部(R2~R5的位置的調整部)予以驅動,從而除去一次成分而使累積曝光量為均勻。亦即,可為在第1曝光除去二次成分並在第2曝光除去一次成分的方法,亦可為僅在第1曝光與第2曝光中的其中一者進行校正的方法。或者,亦可在第1曝光與第2曝光分成既定的比例而在個別的曝光除去一次成分與二次成分。此外,亦可根據在步驟S503決定的校正量進行了校正驅動後,再度如步驟S502般以光量感測器18確認累積曝光量,算出更正確的調整部21c的校正量。In addition, in the present embodiment, the adjustment unit (the adjustment unit at the position R2 to R5) belonging to the same position as the adjustment unit (the adjustment unit at the position R3) selected for removing the secondary component may be driven, thereby The cumulative exposure amount is made uniform by removing primary components. That is, it may be a method of removing secondary components in the first exposure and removing a primary component in the second exposure, or a method of performing correction only in one of the first exposure and the second exposure. Alternatively, the first exposure and the second exposure may be divided into a predetermined ratio, and the primary component and the secondary component may be removed in separate exposures. In addition, after the calibration drive is performed based on the correction amount determined in step S503, the cumulative exposure amount can be confirmed again with the
在步驟S504,以在步驟S503決定的驅動量將調整部21c予以驅動,進行聯合曝光。In step S504, the
在本實施方式,即使聯合區域24具有二次成分的曝光分布的情況下,仍可透過在相對於通過開口21d的重心並沿著掃描方向(Y方向)的直線被配置為非對稱的調整部之中選擇適切的調整部而予以驅動,從而將累積曝光量校正為均勻。此外,變得可予以執行對應於豐富多彩的面板布局的聯合曝光。In the present embodiment, even if the combined
<第2實施方式>
在第1實施方式,說明了有關透過應用具備了被左右非對稱地配置於狹縫9的複數個調整部21c的可變縫21從而可將聯合區域的累積曝光量校正為均勻之例。在本實施方式,說明有關使具備了被配置為左右非對稱的複數個調整部27的可變調整板25應用於曝光量調整板19之例。另外,曝光裝置100的構成方面,與第1實施方式相同故省略說明。此外,在本實施方式未言及之事項方面,依循第1實施方式。
<Second Embodiment>
In the first embodiment, an example was described in which the cumulative exposure amount of the joint area can be corrected to be uniform by applying the variable slit 21 provided with the plurality of
於本實施方式,狹縫9非被配置以使聯合區域的累積曝光量為均勻,而被配置以將照明於原版3的光的照明形狀界定為例如圓弧形狀。因此,不需要界定照明形狀的情況下,亦可不構成於曝光裝置100。此外,配置狹縫9的情況下,狹縫9可非為可變縫,亦可與第1實施方式同樣般為可變縫。In this embodiment, the
圖6為就可局部地調整曝光量的可變調整板25(遮光板)進行繪示的圖。可變調整板25具有左右2個的遮光板25a、25b。可變調整板25具有複數個調整部27(L1~7、R1~7),各個調整部27將遮光板27a、27b推拉從而局部地調整遮光的曝光量。調整部27(L1~7)被相對於調整部27(R1~7)配置為非對稱。具體而言,未施力於遮光板27a及遮光板27b的狀態下,相對於通過遮光板27a與遮光板27b之中心位置並沿著掃描方向(Y方向)的直線被配置為非對稱。遮光板未驅動於非掃描方向(X方向)的情況下,取決於曝光光之照明區域的重心位置成為遮光板27a與遮光板27b之中間位置。在圖6,將與L1~L7的位置成為對稱的位置以黑圈表示。調整部27(R1~7)被配置於與黑圈為不同的位置。調整部27被配置為非對稱的理由在於,作成為可選擇用於校正的調整部以與第1實施方式同樣地除去聯合曝光區域的二次成分。FIG. 6 is a diagram illustrating a variable adjustment plate 25 (shading plate) capable of locally adjusting the exposure amount. The
於本實施方式,亦如同第1實施方式,即使為聯合區域24具有二次成分的曝光分布的情況,仍可透過在配置為左右非對稱的調整部之中選擇適切的調整部並予以驅動,從而將累積曝光量校正為均勻。此外,變得可予以執行對應於豐富多彩的面板布局的聯合曝光。In the present embodiment, as in the first embodiment, even if the
<物品之製造方法的實施方式> 涉及本發明的實施方式的物品之製造方法,適於製造例如平板顯示器(FPD)。本實施方式的物品之製造方法包含:使用上述的曝光裝置對塗佈於基板上的感光劑形成潛像圖案的程序(對基板進行曝光的程序);以及對以該程序形成了潛像圖案的基板進行顯影的程序。再者,該製造方法包含其他周知的程序(氧化、成膜、蒸鍍、摻雜、平坦化、蝕刻、抗蝕層剝離、切割、接合、封裝等)。本實施方式的物品之製造方法比起歷來的方法,在物品的性能、品質、生產性、生產成本中的至少一者方面有利。 <Embodiments of the manufacturing method of the article> The manufacturing method of the article related to the embodiment of the present invention is suitable for manufacturing, for example, a flat panel display (FPD). The method of manufacturing an article according to this embodiment includes: a process of forming a latent image pattern on a photosensitive agent coated on a substrate using the above-mentioned exposure device (a process of exposing the substrate); A procedure for developing substrates. Furthermore, the manufacturing method includes other well-known procedures (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The method of manufacturing an article according to this embodiment is advantageous in at least one of article performance, quality, productivity, and production cost compared to conventional methods.
以上,雖說明有關本發明之優選實施方式,惟本發明當然不限定於此等實施方式,在其要旨之範圍內,可進行各種的變形及變更。As mentioned above, although the preferred embodiment of this invention was described, it goes without saying that this invention is not limited to these embodiment, Various deformation|transformation and a change are possible within the range of the summary.
3:原版
4:投影光學系統
5:光源
9:狹縫
16:基板
19:曝光量調整板
21c:調整部
22a:第1曝光區域
22b:第2曝光區域
100:曝光裝置
3: Original
4: Projection optical system
5: light source
9: Slit
16: Substrate
19:
[圖1]為就曝光裝置的構成進行繪示的示意圖。 [圖2]為用於說明聯合曝光的圖。 [圖3]為就第1實施方式中的狹縫的構成進行繪示的圖。 [圖4]為就第1實施方式中的聯合曝光進行繪示的圖。 [圖5]為就第1實施方式中的聯合曝光的順序進行繪示的流程圖。 [圖6]為就第2實施方式中的曝光量調整板的構成進行繪示的圖。 [FIG. 1] is a schematic diagram showing the structure of an exposure apparatus. [ Fig. 2 ] is a diagram for explaining joint exposure. [ Fig. 3] Fig. 3 is a diagram illustrating the configuration of a slit in the first embodiment. [ Fig. 4] Fig. 4 is a diagram illustrating combined exposure in the first embodiment. [FIG. 5] It is a flowchart which shows the procedure of combined exposure in 1st Embodiment. [FIG. 6] It is a figure which shows the structure of the exposure level adjustment plate in 2nd Embodiment.
9:狹縫 9: Slit
21:可變縫 21: variable seam
21a:可變片件 21a: Variable pieces
21b:固定片件 21b: Fixed pieces
21c:調整部 21c: Adjustment Department
21d:開口 21d: opening
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