TW202224066A - Exhaust gas treatment equipment for semiconductor manufacturing facilities - Google Patents

Abstract

Provided is exhaust gas treatment equipment for semiconductor manufacturing facilities, the exhaust gas treatment equipment including a reaction chamber configured to treat exhaust gas by using an inductively coupled plasma reaction, and a reactive gas injection unit configured to inject a reactive gas, wherein the reaction chamber includes a chamber body providing a plasma reaction space in which the inductively coupled plasma reaction occurs, therein and the chamber body having a gas inlet and a gas outlet communicating with the plasma reaction space, and the exhaust gas is introduced into the plasma reaction space through the gas inlet, and the exhaust gas is discharged from the plasma reaction space through the gas outlet, and the reactive gas injection unit injects the reactive gas toward the plasma reaction space through the gas inlet outside an upstream side of the plasma reaction space.

Description

Exhaust gas treatment equipment for semiconductor manufacturing facilities

The present invention relates to a technique for use in a plurality of semiconductor fabrication facilities, and more particularly, to an apparatus for treating exhaust gas discharged from a processing chamber through the use of plasma.

Semiconductor devices are fabricated by repeatedly performing multiple processes such as photolithography, etching, diffusion, and metal deposition on wafers in a processing chamber. During a semiconductor manufacturing process, various process gases are used, and after the process is completed, residual gases may be present in the process chamber. Since the residual gas in the processing chamber contains a plurality of toxic components, the residual gas is discharged by a vacuum pump and purified by an exhaust gas treatment device. Since a plurality of exhaust gases are compressed at a high temperature of 100°C or higher in the vacuum pump, the exhaust gases are prone to phase change, and therefore, a plurality of solid by-products are easily formed in the vacuum pump and accumulate in the vacuum pump, causing the vacuum pump to malfunction.

In order to prevent the failure of the vacuum pump due to the exhaust gas, a technique of installing a plasma reactor in a conduit connecting the processing chamber and the vacuum pump by using inductively coupled plasma (ICP) has recently been developed and used. ) to decompose the gas (configuration described in Korean Patent Registration No. 10-1448449). The reaction gas such as oxygen is injected into the upstream pipeline of the plasma reactor to improve the decomposition performance of the exhaust gas in the plasma reactor. However, there are many solids generated and grown on the opposite wall at the port where the oxygen is injected. question.

technical problem:

The object of the present invention is to solve the generation and growth of a plurality of solids on the pipe wall surface of the upstream conduit through which oxygen is injected in the upstream pipe of a plasma reactor for decompression of gas using inductively coupled plasma.

Technical Solutions:

According to one aspect of the present invention, there is provided an exhaust gas treatment apparatus for a semiconductor manufacturing facility, the exhaust gas treatment apparatus comprising: a reaction chamber configured to treat the exhaust gas by using an inductively coupled plasma reaction; and a reaction a gas injection unit configured to inject a reactive gas, wherein the reaction chamber includes a chamber body that provides a plasma reaction space in which the inductively coupled plasma reaction occurs , the chamber body has a gas inlet and a gas outlet communicating with the plasma reaction space, and the waste gas is introduced into the plasma reaction space through the gas inlet, and the waste gas is discharged from the plasma reaction space through the gas outlet, and the reaction gas injection unit injects the reaction gas into the plasma reaction space through the gas inlet at the outer side of the upstream side of the plasma reaction space.

In accordance with another aspect of the present invention, there is provided an exhaust gas treatment apparatus for a semiconductor manufacturing facility, the exhaust gas treatment apparatus including a reaction chamber and a pair of gas nozzles, the reaction chamber being configured to use an inductively coupled plasma reaction For processing waste gas, the pair of gas nozzles includes a first gas nozzle and a second gas nozzle, and the reaction gas is injected through the first gas nozzle and the second gas nozzle, wherein the reaction chamber includes: a chamber main body, the chamber main body provides a plasma reaction space, in which the inductively coupled plasma reaction occurs in the chamber body; a gas inlet conduit portion, providing a gas inlet channel through which the exhaust gas is introduced into the plasma reaction space, and the first gas nozzle and the second gas nozzle is installed in the gas inlet conduit portion, the reaction gas is injected into the gas inlet channel, the first gas nozzle is injected into the second gas nozzle, and the second gas nozzle is injected into the first gas nozzle. A gas nozzle injects the reactive gas.

Beneficial effects of the present invention:

According to the present invention, all the above-mentioned objects of the present invention can be achieved. Specifically, since oxygen is injected into the plasma reaction space of the plasma reactor, and the zirconium source gas component is thermally decomposed in the plasma reaction space at a high temperature, the reactivity with oxygen is enhanced, thereby solving the problem of The problem of solid growth due to incomplete reaction is eliminated.

Hereinafter, the configuration and operation of the embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a block diagram schematically showing the configuration of an exhaust gas treatment device in a semiconductor manufacturing facility according to an embodiment of the present invention. Referring to FIG. 1, a semiconductor fabrication facility 100 includes a semiconductor fabrication facility 110 that performs a semiconductor fabrication process, an exhaust facility 120 for exhausting gas from the semiconductor fabrication facility 110, and an exhaust facility 120 for processing the exhaust gas from the semiconductor via the exhaust facility 120. The exhaust gas treatment facility 130 of the gas discharged from the manufacturing facility 110 .

The semiconductor manufacturing apparatus 110 includes a processing chamber 112 in which semiconductor manufacturing processes are performed by using various processing gases. The processing chamber 112 includes any type of processing chamber commonly used in semiconductor processing in the field of semiconductor fabrication equipment. The residual gas generated in the processing chamber 112 is purified by the exhaust gas treatment device 130 , and the residual gas is discharged to the outside by the exhaust device 120 .

The exhaust device 120 exhausts the residual gas generated in the process chamber 112 , the exhaust device 120 includes a vacuum pump 122 , a chamber exhaust pipe 124 connecting the process chamber 112 to the vacuum pump 122 , and from the vacuum pump 122 A pump exhaust pipe 126 extending downstream.

The vacuum pump 122 forms a negative pressure on the side of the processing chamber 112 through the chamber exhaust pipe 124 connecting the processing chamber 112 to the vacuum pump 122 to exhaust the residual gas of the processing chamber 112, and due to The vacuum pump 122 includes the configuration of a vacuum pump commonly used in the field of semiconductor manufacturing equipment, and a detailed description of the vacuum pump will be omitted.

The chamber exhaust pipe 124 connects the exhaust port of the processing chamber 112 to the inlet of the vacuum pump 122 between the processing chamber 112 and the vacuum pump 122 . The residual gas in the processing chamber 112 is exhausted as exhaust gas through the chamber exhaust exhaust pipe 124 by the negative pressure generated by the vacuum pump 122 .

The pump exhaust pipe 126 extends downstream from the vacuum pump 122 , and the pump exhaust pipe 126 is connected to a discharge port of the vacuum pump 122 so that the exhaust gas discharged from the vacuum pump 122 flows.

The exhaust gas treatment equipment 130 treats and purifies the gas discharged from the semiconductor manufacturing equipment 110 through the exhaust gas equipment 120 . The exhaust gas treatment equipment 130 includes a scrubber 140 , a plasma reactor 150 , a gas supply unit 180 and a collector 190 . The scrubber 140 is used to treat the exhaust gas discharged from the vacuum pump 122, the plasma reactor 150 is used to treat the exhaust gas discharged from the processing chamber 112 with plasma, and the gas supply unit 180 is used to supply the plasma The reactor 150 provides reaction gas, and the collector 190 is used to collect the powder contained in the exhaust gas discharged from the plasma reactor 150 .

The scrubber 140 is connected at the downstream end of the pump exhaust pipe 126 to treat the exhaust gas discharged from the vacuum pump 122 . The scrubber 140 includes all types of scrubbers commonly used in the technical field of semiconductor manufacturing equipment to treat the exhaust gas.

The plasma reactor 150 is installed on the chamber exhaust pipe 124 to disintegrate and treat the exhaust gas discharged from the processing chamber 112 using plasma. In Figures 2-4, the plasma reactor 150 is shown in perspective, longitudinal cross-section, and multiple plan views. The plasma reactor 150 includes a reaction chamber 160, a ferrite core 170, a first gas injection nozzle 180b and a second gas injection nozzle 180a. The ferrite core 170 is disposed around the reaction chamber 160 , and the first gas injection nozzle 180 b and the second gas injection nozzle 180 a are used for injecting reaction gas into the reaction chamber 160 . In this embodiment, the plasma reactor 150 is an inductively coupled plasma reactor that uses inductively coupled plasma to process the exhaust pipe (124 in FIG. 1) along the chamber ) of the exhaust gas flowing. Although not shown, the plasma reactor 150 operates by supplying alternating current (AC) suitable for an antenna coil wound around the ferrite core 170 from a power source (not shown).

The reaction chamber 160 is a substantially annular chamber, and the reaction chamber 160 includes a plasma reaction space 163 , a gas inlet channel 164 a and a gas discharge channel 164 b , and the gas to be processed is charged in the plasma reaction space 163 . Plasma reaction, the gas inlet passage 164a communicates with the plasma reaction space 163, and the exhaust gas flowing into the reaction space 163 flows through the gas discharge passage 164b, and communicates with the plasma reaction space 163, and from the plasma reaction space 163 The exhaust gas flows through the gas inlet passage 164a.

The reaction chamber 160 includes a chamber body 161 in which a plasma reaction space 163 is formed, a gas inlet conduit portion 162a, a gas discharge pipe portion 162b, and the gas inlet conduit portion 162a extending from the chamber body 161 And the gas inlet passage 164a is formed in the gas inlet conduit portion 162a, and the gas discharge pipe portion 162b extends from the chamber body 160 and the gas discharge passage 164b is formed in the chamber body 161.

The chamber body 161 forms the plasma reaction space 163 , and the gas to be treated undergoes a plasma reaction in the plasma reaction space 163 . Although not shown, an igniter for initial plasma ignition is installed in the chamber body 161, which includes a first base 161a, a second base 161b, a first connection duct portion 166, and a second connection duct 169, the second base 161b and the first base 161a are spaced apart from each other, and the first connecting conduit portion 166 and the second connecting conduit 169 are used to connect the first base 161a and the second base 161b.

The first base 161a defines a first inner space 1611a, and the first base 161a has a gas inlet 1612a, and the first inner space 1611a communicates with the gas inlet channel 164a through the gas inlet 1612a. The first base portion 161a is located above the second base portion 161b, and the gas inlet conduit portion 162a is connected to the upper portion of the first base portion 161a, and the first connection conduit portion 166 and the second connection conduit portion 169 are connected to the Both lower sides of the first base portion 161a.

The second base 161b is provided with a second inner space 1611b, and the second base 161b has a gas outlet 1612b, and the second inner space 1611b communicates with the gas discharge channel 164b through the gas outlet 1612b. The second base portion 161b is located below the first base portion 161a, and the gas discharge duct portion 162b is connected to the lower portion of the second base portion 161b. The first connecting duct portion 166 and the second connecting duct portion 169 are connected to both upper sides of the second base portion 161b.

The first connecting conduit portion 166 and the second connecting conduit portion 169 are arranged in parallel so that the first base portion 161a located above the second base portion 161b is connected to the second base portion 161b located below the first base portion 161a. The first connecting conduit portion 166 extends vertically between the first base portion 161a and the second base portion 161b, a first connecting passage 165 is formed inside the first connecting conduit portion 166, and a channel formed inside the first base portion 161a The first inner space 1611 a and the second inner space 1611 b formed inside the second base 161 b communicate with each other through the first connection channel 165 . The second connecting conduit portion 169 extends in a vertical direction between the first base 161a and the second base 161b. A second connecting passage 167 is formed inside the second connecting conduit portion 169 . The first interior space 1611a formed inside the first base 161a and the second interior space 1611b formed inside the second base 161b communicate with each other through the second connecting passage 167, the first connecting conduit portion 166 and the second interior space 1611b. The two connecting conduit portions 169 are arranged to be spaced apart from each other such that a groove 169 a is formed between the first connecting conduit portion 166 and the second connecting conduit portion 169 .

The first inner space 1611 a , the second inner space 1611 b , the first connection channel 165 and the second connection channel 167 are connected to each other in the chamber body 161 to form a plasma reaction space 163 . That is, in the present embodiment, the plasma reaction space 163 is formed between the gas inlet channel 164a and the gas outlet channel 164b, which are respectively vertically arranged so that the first connection channel 165 and the second connection channel 167 are separated from each other and Arranged in parallel, the upstream end of the first connection channel 165 and the upstream end of the second connection channel 167 communicate with each other through the first inner space 1611a, and the downstream end of the first connection channel 165 and the second connection The downstream ends of the passages 167 communicate with each other through the second inner space 1611b. As shown by a dotted line in FIG. 3 , plasma is generated along the annular discharge circuit R in the plasma reaction space 163 . The present invention is not limited to the structure of the chamber body 161 shown in the drawings, and the chamber body 161 may be any structure capable of forming an annular plasma reaction space 163 therein, which is also covered by the present invention In the range. The chamber body 161 is preferably arranged in a manner of erecting the annular plasma reaction space 163 formed inside the chamber body 161 . The exhaust gas introduced into the plasma reaction space 163 through the gas inlet 1612a is divided and flows through the first connection channel 165 and the second connection channel 167, respectively, and then discharged from the plasma reaction space 163 through the gas outlet 1612b.

The gas inlet conduit portion 162a is formed to extend upwardly from the upper portion of the first base 161a. A gas inlet channel 164a is formed in the gas inlet conduit portion 162a and extends along the vertical direction. The gas inlet channel 164a communicates with the first inner space 1611a through the gas inlet 1612a. The central axis X of the gas inlet passage 164a passes between the first connection passage 165 and the second connection passage 167 as the central axis of the gas inlet conduit portion 162a. The first gas nozzle 180b and the second gas nozzle 180a are installed in the gas inlet conduit portion 162a, and the exhaust gas and oxygen injected from the first gas injection nozzle 180b and the second gas injection nozzle 180a are introduced through the gas inlet passage 164a The plasma reaction space 163 .

The gas discharge duct portion 162b is formed to extend downward from the lower portion of the second base portion 161b, and a gas discharge passage 164b is formed inside the gas discharge pipe portion 162b and extends in the vertical direction. The gas discharge passage 164b communicates with the second inner space 1611b through the gas outlet 1612b. The gas of the plasma reaction space 163 is discharged to the outside through the gas discharge passage 164b. The gas discharge pipe portion 162b is disposed on the same axis as the gas inlet conduit portion 162a. The exhaust gas discharged from the plasma reactor 150 through the gas discharge passage 164b is introduced into the collector 190 .

The ferrite core 170 is disposed to surround the reaction chamber 160. The ferrite core 170 includes an edge wall 171 and a partition wall 175. The partition wall 175 is located inside the edge wall 171. The ferrite The bulk magnetic core 170 is disposed to surround a portion of the plasma reaction space 163 formed in the reaction chamber 160, and the edge wall portion 171 extends along the circumferential direction to form a substantially rectangular shape. The first connecting duct portion 166 and the second connecting duct portion 169 pass through the inner region of the edge wall portion 171 . The dividing wall portion 175 extends in a straight line from the inner region of the edge wall portion 171 to connect two opposing wall portions. The edge wall portion 171 passes through the groove 169 a formed between the two connecting conduit portions 166 and 169 . Therefore, each of the first connecting duct portion 166 and the second connecting duct portion 169 is surrounded by the ferrite core 170 in the circumferential direction. Although not shown, an antenna coil is wound around the ferrite core 170, and suitable alternating current (AC) power is supplied to the antenna coil.

The first gas injection nozzle 180b and the second gas injection nozzle 180a are installed in the gas inlet conduit portion 162a, and inject oxygen gas O ₂ (the oxygen gas) into the plasma reaction space 163 formed inside the reaction chamber 160 is the reaction gas supplied from the gas supply unit 180). To this end, a gas injection port through which gas is injected is formed in each of the first gas injection nozzle 180b and the second gas injection nozzle 180a. The oxygen injected through the first gas injection nozzle 180b and the second gas injection nozzle 180a enhances the decomposition performance of the exhaust gas in the plasma reaction space 163 . The first gas injection nozzle 180b and the second gas injection nozzle 180a form the reactive gas injection unit of the present invention.

The first gas injection nozzle 180b is disposed on the side of the second connecting conduit portion 169 in the circumferential direction of the gas inlet conduit portion 162a, and the oxygen supplied from the gas supply portion 180 is supplied to the first connecting passage 165 injection. Therefore, the oxygen injected from the first gas injection nozzle 180b flows from the upper portion of the second connection passage 167 in the gas inlet passage 164a in a downwardly inclined direction toward the first connection passage 165, and the The gas passes through the gas inlet 1612a and then flows into the first connecting channel 165, as indicated by the dotted arrow.

The second gas injection nozzle 180a is disposed on the side of the first connecting conduit portion 166 in the circumferential direction of the gas inlet conduit portion 162a, and the oxygen supplied from the gas supply unit 180 is supplied to the second connecting passage 167 injected. Therefore, the oxygen injected from the second gas injection nozzle 180a flows from the upper portion of the first connection passage 165 in the gas inlet passage 164a in a downwardly inclined direction toward the second connection passage 167, and passes through the The gas inlet 1612a flows into the second connecting channel 167, as indicated by the dashed arrow.

The gas supply unit 180 stores the oxygen as a reaction gas injected through the first gas nozzle 180b and the second gas nozzle 180a, and supplies the oxygen to the first gas nozzle 180b and the second gas nozzle 180b through the gas supply pipe 185 Gas nozzle 180a.

The collector 190 collects the powder contained in the exhaust gas discharged from the plasma reactor 150, and the collector 190 includes all types of collectors commonly used in the field of semiconductor manufacturing equipment to collect the powder contained in the exhaust gas. The collector 190 is disposed below the plasma reactor 150 on the chamber exhaust pipe 124 to collect powder contained in the exhaust gas discharged through the gas exhaust pipe portion 162b of the reaction chamber 160 .

A unique configuration of the present invention is that the first gas nozzle 180 b and the second gas nozzle 180 a inject the oxygen gas as a reactive gas into the plasma reaction space 163 formed in the reaction chamber 160 . In the following, the operation will be described in accordance with this unique configuration of the present invention.

When the oxygen is simply injected into the pipe, as shown in FIG. 5, solids are generated and grown on the inner wall surface of the pipe opposite the injection port. The inventors of the present invention analyzed the flow of the oxygen injected into the conduit to determine the cause of the generation of such solids. As a result, as shown in Figs. An oxygen-enriched area is created on the inner wall surface, creating an environment where powder is easily generated locally. Furthermore, the inventors of the present invention found that when the oxygen was simply injected into the conduit, solids generated and grown on the inner wall surface of the conduit opposite the injection port were used in the semiconductor manufacturing process. The zirconium source gas component (eg: CpZr(NMe ₂ ) ₃ ) of the precursor for the formation of the zirconia thin film reacts with oxygen to form zirconia (ZrO ₂ ), which is formed by incomplete reaction with high nitrogen content. An incomplete reaction product, and the reason for the incomplete reaction is that the reaction does not undergo complete oxidation at a temperature lower than the pyrolysis temperature (200~250 °C). In the present invention, oxygen is injected into the plasma reaction space 163, and the zirconium source gas component and oxygen react in the high temperature plasma reaction space 163 to generate zirconia. Since the zirconium source gas component is thermally decomposed in the high temperature plasma reaction space 163, the reactivity with oxygen is enhanced, thereby solving the problem of growing multiple solids due to incomplete reaction. The following reaction equations represent the decomposition and replacement reactions of the zirconium source gas components in the plasma reaction space 163 . [Reaction formula] Zirconium source (CpZr(NMe ₂ ) ₃ ) + plasma + O ₂ + Or. ₂ (S) + NO(g)/NO ₂ (g) + CO(g)/CO ₂ (g) + H ₂ O(g) + C _x H _y (g)

The zirconia (ZrO ₂ ) produced in this plasma reaction space 163 is in the form of a high-purity and stable fine powder, and is collected in a collector 190 provided below the plasma reactor 150 .

Figures 9 and 10 show a plasma reactor according to another embodiment of the present invention in longitudinal section and plan view. Referring to FIGS. 9 and 10 , the plasma reactor 250 includes a reaction chamber 160 , a ferrite core 170 disposed around the reaction chamber 160 , and a The first gas nozzle 280b and the second gas nozzle 280a. Except for the configuration of the first gas injection nozzle 280b and the second gas injection nozzle 280a, the rest of the configuration of the plasma reactor 250 is the same as the plasma reactor 150 shown in FIGS. 2 to 4, Therefore, the detailed description thereof is omitted, and only the configuration and operation of the first gas nozzle 280b and the second gas nozzle 280a are described in detail.

The first gas injection nozzle 280b and the second gas injection nozzle 280a are installed in the gas inlet conduit portion 162a such that a reactive gas such as oxygen (O ₂ ) is introduced into the gas formed in the gas inlet conduit portion 162a In the inlet channel 164a, the reaction gas passed through the first gas injection nozzle 280b and the second gas injection nozzle 280a is introduced into the plasma reaction space 163 through the gas inlet channel 164a together with the exhaust gas to be treated, so that the exhaust gas is The decomposition performance is enhanced in the plasma reaction space 163 . The first gas nozzle 280b and the second gas nozzle 280a form a pair of gas nozzles according to the present invention. Therefore, according to the present invention, the first gas injection port formed in the first gas injection nozzle 280b and the second gas injection port formed in the second gas injection nozzle 280a form a pair of gas injection ports. In this embodiment, the first gas nozzle 280b and the second gas nozzle 280a are located at a point symmetrical to each other with respect to the central axis X of the gas inlet passage 164a, and are disposed opposite to each other on the side of the gas inlet conduit portion 162a. peripheral.

The first gas injection nozzle 280b is installed in the gas inlet conduit portion 162a to inject a reactive gas such as oxygen toward the center of the gas inlet channel 164a, as indicated by arrows. The gas injection direction of the first gas nozzle 280b faces the second gas nozzle 280a opposite to the first gas nozzle 280b.

The second gas injection nozzle 280a is installed in the gas inlet conduit portion 162a to inject a reactive gas such as oxygen toward the center of the gas inlet channel 164a, as indicated by arrows. The gas injection direction of the second gas nozzle 280a faces the first gas nozzle 280b opposite to the second gas nozzle 280a.

The oxygen injected from the first gas injection nozzle 280b and the oxygen injected from the second gas injection nozzle 280a collide at the center of the gas inlet channel 164a. Therefore, the direct contact of the oxygen with the inner wall surface of the gas inlet conduit portion 162a is minimized to prevent the generation of solids.

In the present embodiment, it is described that the first gas injection nozzle 280b injects oxygen toward the second injection nozzle 280a, and the second injection nozzle 280a injects the oxygen toward the first gas injection nozzle 280b. Alternatively, the two gas nozzles 280b and 280a are arranged in various shapes such that the gas injection direction of the first gas nozzle 280b and the gas injection direction of the second gas nozzle 280a intersect, thereby obtaining the same effect, which also covers within the scope of the present invention.

In this embodiment, a pair of gas injection nozzles is taken as an example for description, but in addition to this, there may also be two or more pairs of gas injection nozzles arranged in this manner, which also falls within the scope of the present invention.

FIG. 11 is a plan view of a plasma reactor according to another embodiment of the present invention. Please refer to FIG. 11 , the plasma reactor 350 includes a reaction chamber 160 and a ferrite core 170 disposed around the reaction chamber 160 , and a gas injection unit for injecting reaction gas into the interior of the reaction chamber 160 . Except for the gas injection unit, the rest of the configuration of the plasma reactor 350 is the same as that of the plasma reactor 250 shown in FIGS. 9 to 10 , and therefore the detailed description thereof is omitted, and only the gas injection part is described in detail. configuration and operation.

In the embodiment shown in FIG. 11, the gas injection unit includes an annular gas flow pipe 390 surrounding the gas inlet duct portion 162a from the outside, and a plurality of gas injection ports 380a, 380b, 381a, 381b, 382a and 382b.

The gas flow conduit 390 is a conduit surrounding the gas inlet conduit portion 162a in an annular shape from the outside, and inside the gas flow conduit 390 is formed the reaction gas to flow along the circumferential direction of the gas inlet conduit portion 162a channel. The gas supply conduit 395 is connected to the gas flow conduit 390, the reaction gas is supplied from the outside into the gas flow conduit 390 through the gas supply conduit 395, and the reaction gas flowing in the gas flow conduit 390 is formed at the gas inlet The plurality of gas injection ports 380a, 380b, 381a, 381b, 382a and 382b in the conduit portion 162a are injected into the gas inlet channel 164a.

The plurality of gas injection ports 380a, 380b, 381a, 381b, 382a and 382b are formed in the gas inlet conduit portion 162a, and the plurality of gas injection ports 380a, 380b, 381a, 381b, 382a, 382b are respectively connected with the gas flow pipe 390 Connected. In the present embodiment, a plurality of gas injection ports 380a, 380b, 381a, 381b, 382a, and 382b are described as being disposed at a plurality of equal intervals along the circumferential direction of the gas inlet conduit portion 162a. The reaction gas flowing in the gas flow pipe 390 is injected into the gas inlet channel 164a through each of the plurality of gas injection ports 380a, 380b, 381a, 381b, 382a and 382b at the plurality of gas injection ports 380a , 380b, 381a, 381b, 382a and 382b, the two gas injection ports 380a and 380b arranged opposite to each other form a pair of first gas injection ports, and the other two gas injection ports 381a and 381b arranged opposite to each other form a pair The first gas injection port, and the other two gas injection ports 382a, 382b disposed opposite to each other form a pair of third gas injection ports, and the direction in which the gas is injected into each pair of gas injection ports is the same as that shown in FIGS. The direction of the pair of gas injection nozzles is the same.

In this embodiment, three pairs of gas injection ports are described, but in addition, the number of multiple gas injection port pairs may be two or less, or four or more, which are also covered in this within the scope of the invention.

Although the present invention has been described through the above-described embodiments, the present invention is not limited thereto. Without departing from the spirit and scope of the present invention, various modifications and changes can be made to the above-mentioned embodiments, and those skilled in the art to which the present invention pertains can understand that the various modifications and changes also belong to the present invention.

100: Semiconductor Manufacturing Facility 110: Semiconductor Manufacturing Equipment 112: Processing Chamber 120: Exhaust equipment 122: Vacuum pump 124: Chamber exhaust pipe 126: Pump exhaust pipe 130: Exhaust gas treatment equipment 140: Scrubber 150: Plasma Reactor 160: Reaction Chamber 161: Chamber body 161a: First base 1611a: First interior space 1611b: Second interior space 1612a: Gas inlet 1612b: Gas outlet 161b: Second base 162a: Gas inlet conduit section 162b: Gas discharge conduit section 163: Plasma Reaction Space 164a: Gas inlet channel 164b: Gas exhaust channel 165: The first connection channel 166: First connecting conduit part 167: Second connection channel 169: Second connecting conduit 169a: Groove 170: Ferrite core 171: Edge Wall 175: Partition wall 180: Gas supply unit 180a: Second gas injection nozzle 180b: First gas injection nozzle 185: Gas Supply Pipe 190: Collector 250: Plasma Reactor 280b: first gas injection nozzle 280a: Second gas injection nozzle 350: Plasma Reactor 380a, 380b, 381a, 381b, 382a and 382b: gas injection ports 390: Gas Flow Conduit 395: Gas Supply Conduit A-A': Straight line

FIG. 1 is a block diagram schematically showing the arrangement of an exhaust gas treatment device in a semiconductor manufacturing facility according to an embodiment of the present invention. Fig. 2 is a perspective view of the plasma reactor provided in the exhaust gas treatment equipment shown in Fig. 1; Fig. 3 is a longitudinal sectional view of the plasma reactor shown in Fig. 2 taken along line AA' of Fig. 2; Figure 4 is a plan view of the plasma reactor shown in Figure 2; Figure 5 shows a photograph of a plurality of solids produced and grown on the inner wall surface of the conduit relative to the injection port when oxygen was simply injected into the conduit; FIGS. 6-8 illustrate views of oxygen flow analysis for describing the growth of the plurality of solids shown in FIG. 5; 9 and 10 are respectively a longitudinal cross-sectional view and a plan view of a plasma reactor according to another embodiment of the present invention; and FIG. 11 is a plan view of a plasma reactor according to another embodiment of the present invention.

100: Semiconductor Manufacturing Facility

110: Semiconductor Manufacturing Equipment

112: Processing Chamber

120: Exhaust equipment

122: Vacuum pump

124: Chamber exhaust pipe

126: Pump exhaust pipe

130: Exhaust gas treatment equipment

140: Scrubber

150: Plasma Reactor

180: Gas supply unit

185: Gas Supply Pipe

190: Collector

Claims (15)

An exhaust gas treatment equipment for a semiconductor manufacturing facility, the exhaust gas treatment equipment comprising: a reaction chamber configured to treat an exhaust gas by using an inductively coupled plasma reaction; and a reactive gas injection unit configured to inject a reactive gas, Wherein the reaction chamber includes a chamber main body, the chamber main body provides a plasma reaction space in which the inductively coupled plasma reaction occurs, and the chamber main body has a plasma reaction space communicating with the plasma reaction space. a gas inlet and a gas outlet, and The exhaust gas is introduced into the plasma reaction space through the gas inlet, and the exhaust gas is discharged from the plasma reaction space through the gas outlet, The reaction gas injection unit injects the reaction gas into the plasma reaction space through the gas inlet at the outer side of an upstream side of the plasma reaction space. The exhaust gas treatment apparatus of claim 1, wherein a first connection passage and a second connection passage communicating with the gas inlet are formed in the plasma reaction space, and The exhaust gas introduced into the plasma reaction space through the gas inlet splits and flows through the first connection channel and the second connection channel, respectively, and The reaction gas injection unit includes a first gas injection port and a second gas injection port, the reaction gas is injected into the first connection channel through the first gas injection port, and the reaction gas is injected into the first connection channel through the second gas injection port Two connection channels are injected. The exhaust gas treatment apparatus of claim 2, wherein the first gas injection port and the second gas injection port are located in a gas inlet conduit portion extending from the chamber body to an outside, and A gas inlet passage communicating with the plasma reaction space through the gas inlet is formed inside the gas inlet conduit portion. The exhaust gas treatment equipment according to claim 3, wherein the first connecting channel and the second connecting channel are located on both sides of the gas inlet, and the gas inlet is located between the first connecting channel and the second connecting channel, and The reaction gas is injected obliquely to a central axis of the gas inlet channel to flow from the second connection channel to the first connection channel through the first gas injection port, and The reaction gas is injected obliquely to the central axis of the gas inlet channel to flow from the first connection channel to the second connection channel through the second gas injection port. The exhaust gas treatment apparatus of claim 1, wherein the reaction chamber is configured such that the gas inlet is located above the plasma reaction space, and The reaction gas is injected downward into the plasma reaction space from an upper portion of the gas inlet. An exhaust gas treatment equipment for a semiconductor manufacturing facility, the exhaust gas treatment equipment comprising: a reaction chamber configured to treat the exhaust gas by using an inductively coupled plasma reaction; and a pair of gas injection ports, including a first gas injection port and a second gas injection port, a reaction gas is injected through the first gas injection port and the second gas injection port, The reaction chamber includes a chamber main body and a gas inlet conduit portion, the chamber main body provides a plasma reaction space, an inductively coupled plasma reacts in the plasma reaction space, and the gas inlet conduit portion provides a plasma reaction space. a gas inlet channel through which the exhaust gas is introduced into the plasma reaction space, and The exhaust gas is injected into the gas inlet channel through the first gas injection port and the second gas injection port in the gas inlet conduit portion, and The pair of gas injection ports are arranged such that a gas injection direction through the first gas injection port and a gas injection direction through the second gas injection port intersect on the gas inlet channel. The exhaust gas treatment apparatus of claim 6, wherein the gas injected through the first gas injection port is directed to the second gas injection port, and the gas injected through the second gas injection port is directed to the first gas injection port . The exhaust gas treatment apparatus of claim 6, wherein the pair of gas injection ports are in plural form. The exhaust gas treatment apparatus according to claim 6, wherein the first gas injection port and the second gas injection port are disposed on an outer periphery of the gas inlet conduit portion opposite to each other, so that the reaction gas faces toward the gas inlet passage. A center injection. The exhaust gas treatment apparatus of claim 1 or 6, wherein the reactive gas is oxygen. The exhaust gas treatment apparatus of claim 10, wherein zirconium and oxygen react with each other in the plasma reaction space to form zirconium oxide, and zirconium is heated by a zirconium source gas contained in the exhaust gas in the plasma reaction space decomposed. The exhaust gas treatment apparatus of claim 11, wherein the zirconium source gas is CpZr(NMe ₂ ) ₃ used as a precursor for forming a zirconium oxide thin film. The exhaust gas treatment apparatus of claim 1 or 6, further comprising a collector configured to collect powder contained in the exhaust gas discharged from the reaction chamber. An exhaust gas treatment equipment for a semiconductor manufacturing facility, the exhaust gas treatment equipment comprising: a plasma reactor configured to treat an exhaust gas by using an inductively coupled plasma reaction; and a gas supply unit configured to supply a reaction gas to the plasma reactor, Wherein the plasma reactor includes: a chamber main body, the chamber main body provides a plasma reaction space in which the inductively coupled plasma reaction occurs; a gas inlet conduit part, from the chamber main body extending to an outer side and having a gas inlet passage, the gas inlet passage passing through the gas inlet conduit portion; a ferrite core, arranged on the outer side of the chamber body to surround the plasma reaction space; an antenna coil, wound An alternating current (AC) is applied on the ferrite core; and a reactive gas injection unit injects the reactive gas into the reactive gas injection unit, A gas inlet and a gas outlet communicating with the plasma reaction space are formed in the chamber body, The gas inlet channel extends from the gas inlet and communicates with the plasma reaction space, A first inner space communicated with the gas inlet, a second inner space communicated with the gas outlet and spaced from the first inner space, and a first connection channel and a second connection channel are formed in the plasma reaction space , the first connecting channel and the second connecting channel passing through the first inner space and the second inner space communicate with each other, The first connection channel and the second connection channel are arranged in parallel with the gas inlet in a state of being separated from each other, The exhaust gas flows into the first inner space through the gas inlet, divides into the first connection channel and the second connection channel, flows through the second inner space, and is discharged through the gas outlet, Electricity is generated in the plasma reaction space by AC power applied to the antenna coil along an annular discharge loop connecting the first inner space, the second inner space, and the first connection channel and the second connection channel pulp, The reaction gas injection unit includes a first gas injection port and a first gas injection port, the first gas injection port is located in the gas inlet conduit portion and injects the reaction gas into the first connection channel, the first gas injection port a port is located in the gas inlet conduit portion and injects reactive gas into the second connection channel, In the first gas injection port, the reaction gas injected from the first gas injection port is injected obliquely to a center axis of the gas inlet passage, and flows from the second connection passage to the first connection passage to pass through the gas inlet channel, and In the second gas injection port, the reaction gas injected from the second gas injection port is injected obliquely to the center axis of the gas inlet passage, and flows from the first connection passage to the second connection passage and passes through through the gas inlet channel. An exhaust gas treatment equipment for a semiconductor manufacturing facility, the exhaust gas treatment equipment comprising: a plasma reactor configured to treat exhaust gas by using an inductively coupled plasma reaction; and a gas supply unit configured to supply a reaction gas to the plasma reactor, Wherein the plasma reactor includes: a chamber main body, the chamber main body provides a plasma reaction space in which the inductively coupled plasma reaction occurs; a gas inlet conduit part, from the chamber main body extending to an outer side and having a gas inlet passage, the gas inlet passage passing through the gas inlet conduit portion; a ferrite core, arranged on the outer side of the chamber body to surround the plasma reaction space; an antenna coil, wound An alternating current (AC) is applied to the ferrite core; and a pair of gas injection ports includes a first gas injection port and a second gas injection port for injecting the reaction gas, A gas inlet and a gas outlet communicating with the plasma reaction space are formed in the chamber body, The gas inlet channel extends from the gas inlet and communicates with the plasma reaction space, A first inner space communicated with the gas inlet, a second inner space communicated with the gas outlet and spaced from the first inner space, and a first connection channel and a second connection channel are formed in the plasma reaction space , the first connecting channel and the second connecting channel passing through the first inner space and the second inner space communicate with each other, The first connection channel and the second connection channel are arranged in parallel with the gas inlet in a state of being separated from each other, The exhaust gas flows into the first inner space through the gas inlet, divides into the first connection channel and the second connection channel, flows through the second inner space, and is discharged through the gas outlet, Electricity is generated in the plasma reaction space by AC power applied to the antenna coil along an annular discharge loop connecting the first inner space, the second inner space, and the first connection channel and the second connection channel pulp, The first gas injection port and the second gas injection port are located in the gas inlet conduit portion and inject the reaction gas into the gas inlet channel, The first gas injection port and the second gas injection port are disposed opposite to each other on an outer periphery of the gas inlet conduit portion, The reaction gas injected from the first gas injection port is directed to the second gas injection port, and The reaction gas injected from the second gas injection port is directed to the first gas injection port.

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