TW202125542A - Thin film resistor element and manufacturing method thereof - Google Patents

Abstract

A method of manufacturing a thin film resistor element comprises sequentially forming a resistor layer, an intermediate layer and an electrode layer on a surface of a substrate, removing a portion of the electrode layer, the intermediate layer and the resistor layer to form a first pattern, and removing a portion of the electrode layer and the intermediate layer to form a second pattern, which it is on the resistor layer. Finally it can obtain a thin film resistor element with low contact resistance characteristics by using the intermediate layer to shape the electrode layer with a small area on the resistance layer.

Description

Thin film resistance element and manufacturing method thereof

The present invention relates to a method for manufacturing a thin film resistance element, and in particular to a method for manufacturing a thin film resistance element with low contact resistance characteristics.

Generally, in the process of manufacturing thin-film resistor elements, most of them first form a resistive layer on a substrate, and form a specific pattern on the resistive layer by etching, then form an electrode layer on the resistive layer with a specific pattern, and then perform the step of etching. An electrode layer with another specific pattern is formed.

However, for resistance elements with low contact area, it is not easy to form a low-area electrode layer on the resistance layer, and the defect rate in the manufacturing process is relatively high. The present invention proposes a solution to this problem.

In order to improve the manufacturing method of thin film resistance elements with low contact area, the present invention provides a method for manufacturing thin film resistance elements, which can produce thin film resistance elements with low metal contact area more efficiently.

The manufacturing method of the thin film resistance element of the present invention includes sequentially forming a resistance layer, an intermediate layer, and an electrode layer on the surface of a substrate, first removing a part of the electrode layer, the intermediate layer and the resistance layer to form a first pattern, and removing a part The electrode layer and the intermediate layer form a second pattern on the resistance layer, so that a thin film resistance element with low contact resistance characteristics can be obtained more efficiently.

The following detailed descriptions are provided with specific embodiments in conjunction with the accompanying drawings to make it easier to understand the purpose, technical content, characteristics and effects of the present invention.

Hereinafter, various embodiments of the present invention will be described in detail, and the drawings will be used as examples. In addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, and easy substitutions, modifications, and equivalent changes of any of the embodiments are included in the scope of the present invention, and the scope of the patent application is regarded as allow. In the description of the specification, in order to enable the reader to have a more complete understanding of the present invention, many specific details are provided; however, the present invention may still be implemented under the premise of omitting some or all of the specific details. In addition, well-known steps or elements are not described in details to avoid unnecessary limitations on the present invention. The same or similar elements in the drawings will be represented by the same or similar symbols. It is particularly important to note that the drawings are for illustrative purposes only, and do not represent the actual size or quantity of the components. Some details may not be completely drawn in order to keep the drawings concise.

The present invention provides a method for efficiently forming a resistance layer, an intermediate layer and an electrode layer with different patterns. The resistance layer, at least one intermediate layer and the electrode layer are formed on a substrate in sequence, and then the metal layers are formed by an etching process The specific pattern required.

Please refer to FIG. 3 first, which is a flow chart of the method for manufacturing the thin film resistor element of the present invention. In one embodiment of the present invention, a method for manufacturing a thin film resistor element includes forming a resistance layer, an intermediate layer, and an electrode layer on the surface of a substrate in sequence, and the resistance layer, the intermediate layer, and the electrode layer can be electrically connected to each other, as in step S101 As shown, the substrate material can be aluminum oxide or other materials suitable for resistance elements; a first photoresist is formed on the electrode layer and a part of the electrode layer is removed by the first etching to form a first pattern, as in steps S102-S103 As shown; after the first photoresist is removed, part of the intermediate layer is removed by a second etching and part of the resistive layer is removed by a third etching to form a first pattern, as shown in steps S104-S106, where the first The reagent components used for the three etchings include 5-50% hydrochloric acid, 5-30% sulfuric acid, 5-30% nitrates, 1-10% fluoride, 1-5% interface active agent and 1-10% copper protection Forming a second photoresist on the electrode layer and removing part of the electrode layer with the fourth etching to form a second pattern, as shown in steps S107-S108; after removing the second photoresist, perform a fifth Part of the intermediate layer is removed by etching to form a second pattern, and finally a thin film resistance element with a three-layer metal layer structure is obtained, as shown in steps S109-S111.

Among them, the resistance layer, the intermediate layer and the electrode layer are formed by bonding, sputtering or printing processes to make the metal material adhere to the surface of the substrate, and then use photoresist and etching to form different patterns, which are arranged as required.

The formation of the first pattern is to remove the residual resistance layer on the periphery of the substrate, which can avoid the parallel effect caused by the surrounding residual resistance during the probe resistance detection to affect the detection result.

Next, referring to FIG. 1 and FIG. 2, which are a top view and a side view of the thin film resistor element of the present invention. In an embodiment of the present invention, the thin film resistance element 200 obtained by the above-mentioned manufacturing method includes a substrate 20, a resistance layer 21 having a first pattern is disposed on the surface of the substrate 20, and an intermediate layer 23 having a second pattern is disposed on the surface of the substrate 20. On the resistive layer 21, the electrode layer 22 with the second pattern is also arranged on the intermediate layer 23, and the first pattern and the second pattern are arranged on the resistive layer 21, the intermediate layer 23, and the electrode layer 22, respectively. The sequence is formed by etching. The first pattern is partially the same as the second pattern, and the partially identical contact area is 75%-100%. The intermediate layer substantially covers the resistive layer, and the electrode layer substantially covers the intermediate layer.

In other embodiments, the lowermost layer is a resistive layer, the uppermost layer is an electrode layer, and the intermediate layer can be a plurality of transition metal layers or buffer layers of different materials, which can increase the stability of adhesion between the electrode layer and the resistive layer. The thickness and material of the resistive layer are 300-900 angstroms (Å) of nickel chromium silicon (NiCrSi), the thickness and material of the intermediate layer are 300-500 Å of titanium (Ti) or titanium tungsten (TiW), and the thickness and material of the electrode layer It is copper (Cu) of 3-15 microns (μm).

In the low contact resistance embodiment, the degree of thermal energy generated by the rated voltages of different magnifications is used to cause thermal damage to the metal material contact area, so as to verify the contact resistance change caused by the thermal energy. The thin film resistance element of the present invention has a low metal contact area and an intermediate layer to increase the adhesion between the electrode layer and the resistance layer, although after the thermal damage generated by the high-rate rated voltage, the average resistance value changes compared to the conventional thin film resistance element It is significantly lower, so the thin film resistance element of the present invention has better resistance stability. Table 1 Conventional thin film resistance element Voltage ratio 2.5X 3.0X 3.5X 4.0X 4.5X Average resistance change 0.0037 0.0087 0.0293 0.2465 0.9633 Standard deviation 0.0187 0.0298 0.0778 1.0428 1.9220 Thin film resistance element of the present invention Voltage ratio 2.5X 3.0X 3.5X 4.0X 4.5X Average resistance change -0.0011 0.0012 0.0013 0.0083 0.0107 Standard deviation 0.0016 0.0086 0.0284 0.0335 0.0435

In summary, the present invention provides a method for manufacturing a thin film resistor element, which includes first forming a laminated structure of a resistive layer, an intermediate layer and an electrode layer on a substrate, and then combining photoresist with different patterns and several etching methods. The metal layers of different layers form the required patterns to obtain the thin-film resistance element of the resistance layer and the electrode layer with low contact area. The intermediate layer increases the adhesion between the electrode layer and the resistance layer. This thin-film resistance element with low metal contact area has Stable resistance characteristics, not easily affected by high temperature.

The above-mentioned embodiments are only to illustrate the technical ideas and features of the present invention, and their purpose is to enable those who are familiar with the art to understand the content of the present invention and implement them accordingly. When they cannot be used to limit the patent scope of the present invention, That is, all equal changes or modifications made in accordance with the spirit of the present invention should still be covered by the patent scope of the present invention.

100: Flow chart of thin film resistance element manufacturing method 200: Thin film resistor element 20: substrate 21: Resistive layer 22: Electrode layer 23: middle layer S101-S111: steps

Fig. 1 is a side view of the thin film resistance element of the present invention.

Fig. 2 is a top view of the thin film resistance element of the present invention.

Fig. 3 is a flow chart of the method for manufacturing the thin film resistor element of the present invention.

200: Thin film resistor element

20: substrate

21: Resistive layer

22: Electrode layer

23: middle layer

Claims (7)

A method for manufacturing a thin film resistor element, including: Sequentially forming a resistance layer, an intermediate layer and an electrode layer on the surface of a substrate; Removing part of the electrode layer, the intermediate layer and the resistance layer to form a first pattern; and A part of the electrode layer and the intermediate layer are removed to form a second pattern on the resistance layer to obtain a thin film resistance element. According to the method for manufacturing a thin film resistor element described in the first item of the scope of the patent application, the resistor layer, the intermediate layer or the electrode layer are formed by bonding, sputtering or printing processes. According to the method for manufacturing a thin film resistance element described in the first item of the patent application, the removal of a part of the resistance layer, the electrode layer and the intermediate layer is performed by a photolithographic etching process. According to the method for manufacturing a thin film resistor element described in claim 1, wherein the overlapping area of the first pattern and the second pattern is 75%-100%. A thin film resistive element, including: A substrate; A resistance layer is disposed on the surface of the substrate, wherein the resistance layer has a first pattern; An intermediate layer is disposed on the resistance layer, wherein the intermediate layer has a second pattern; An electrode layer is disposed on the intermediate layer, wherein the electrode layer has the second pattern; and The first pattern and the second pattern are formed after the resistance layer, the intermediate layer, and the electrode layer are arranged. The thin film resistance element according to the 5th item of the scope of patent application, wherein the resistance layer is nickel chromium silicon, the electrode layer is copper, and the intermediate layer is titanium or titanium tungsten. According to the manufacturing method of the thin film resistor element described in the 5th item of the scope of patent application, the overlapping area of the first pattern and the second pattern is 75%-100%.

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