TW202101885A - Power control device specifically relating to a power control device for dynamically adjusting the driving capability, and setting a driving voltage to control the conduction loss and the switch loss to achieve balance - Google Patents

Abstract

A power control device is suitably applied to the field of driving a microelectronic device like MOSFET. The power control device of the present invention is a power control device that can dynamically adjust driving capability. Based on Miller plateau voltage of different microelectronic device such as MOSFET, it can set a driving voltage so as to control the conduction loss and the switch loss to get balance, and further achieve an optimal average efficiency, particularly, for easy selecting or replacing the microelectronic device like MOSFET. Furthermore, an electronic system provided with the power control device effectively solves the problem of Electromagnetic Interference (EMI) imposed on peripheral devices.

Description

Power control device

The present invention relates to a power control device. More specifically, it relates to a power control device with dynamic driving capability adjustment, setting the driving voltage, controlling the conduction loss and the switching loss to achieve a balance, and simultaneously solving electromagnetic interference EMI The problem.

In power electronic systems with switching mode power supply, power metal oxide semiconductor field-effect transistor MOSFET is often used as a semiconductor switching device, and in order to achieve high performance, low electromagnetic interference EMI, and good control performance The gate driver of the power MOSFET is essential.

Taiwan Public/Announcement No. I250406 "Gate Driver Multi-Chip Module" discloses a multi-chip module (MCM) that can provide a power circuit on a computer motherboard. The package size is reduced, but the package size is reduced. Performance will be sacrificed. The MCM encapsulates the necessary power circuit components on a ball grid array (BGA) substrate. Two power MOSFETs are located on the BGA substrate and connected between an input voltage and ground to form a half-bridge arrangement. The MOSFET gate driver is electrically connected to the respective gate inputs of the two power MOSFETs to alternately switch the power MOSFETs to generate an AC output voltage at a common output node among the power MOSFETs.

Taiwan Publication/Announcement No. I563788 "Circuits and power modules used to provide power to electronic devices, and methods for assembling step-down equipment" discloses a circuit used to provide power for powering electronic devices. The circuit includes a primary power circuit and a secondary power circuit. The primary power circuit receives an alternating current (AC) input power signal from a power source and generates an intermediate direct current (DC) power signal. The intermediate DC power signal is generated at a first voltage level that is less than a voltage level of the AC input power signal. The secondary power circuit receives the intermediate DC power signal from the primary power circuit and transmits an output DC power signal to an electronic device. The output DC power signal is transmitted at an output voltage level less than the first voltage level of the intermediate DC power signal.

China Public/Announcement No. CN 103095137 B "Dynamic MOSFET Gate Driver" discloses a dynamic metal oxide semiconductor field effect transistor (MOSFET) gate driver system architecture and control scheme. In this case, a switching power converter includes: a transformer including: a primary winding coupled to the input voltage; and a secondary winding coupled to the output of the switching power converter; a field effect transistor switch coupled to the The primary winding of the transformer generates a current through the primary winding when the field effect transistor switch is turned on, and does not generate a current through the primary winding when the field effect transistor switch is turned off; and The driver control circuit includes: a first field-effect transistor having a variable on-resistance; a second field-effect transistor coupled in series with the first field-effect transistor and also having a variable on-resistance, wherein the field effect The gate of the transistor switch is coupled to the node between the first field effect transistor and the second field effect transistor, wherein the driver control circuit is configured to generate a plurality of switches for switching on the field effect transistor A control signal for turning on or turning off the field effect transistor switch during a switching period, each of the switching periods includes a first part where the field effect transistor switch is turned on and where the field effect transistor switch is turned off The second part of the off, and the driver control circuit adjusts the on resistance of the first field effect transistor to change the magnitude of the control signal from at least one switching period of the switching period of the field effect transistor switch The first level during the first duration of the first portion of the switching period is adjusted to the second level during the second duration of the first portion of the one switching period of the switching period, and the second level is high At the first level, the second duration is later than the first duration in time.

Taiwan Publication/Announcement No. I473396 "Switching Power Converter and Method of Controlling Switching Power Converter" discloses a dynamic metal oxide semiconductor field effect transistor (MOSFET) gate driver system architecture and control scheme. The MOSFET gate driver system dynamically adjusts both the gate driver on resistance and the gate driver off resistance in a single (ie, one) switching cycle to reduce electromagnetic interference (EMI) in the system and minimize Calculate the conduction loss of a power MOSFET during operation.

Taiwan Publication/Announcement No. I399912 "Power Converter and Method of Providing Control in Power Converter" discloses a power converter using a microcontroller. In one embodiment, the power converter can be a digital flyback or forward converter. The microcontroller can have a digital pulse width modulation (PWM) controller, arithmetic logic unit (ALU) core, internal random access memory (RAM), read-only memory (ROM) and one or more analogs Digital (A/D) and digital to analog (D/A) microcontrollers. In order to achieve a fast dynamic response in an internal current control loop, an analog comparator is used to provide analog current control. The analog comparator can compare a signal representing the current flowing into the power converter with a programmable voltage reference value. The analog comparator can be integrated with a digital microcontroller into a single integrated circuit (IC) chip. Furthermore, the power converter can transmit signals of various conditions (for example, output voltage level, current level, error, etc.) via the serial communication port, or can receive system control commands (for example, Output voltage, current protection level, standby mode for a minimum power consumption, normal mode and power on (ON) or off (OFF) commands.

However, looking at the above-mentioned conventional technology, as far as the current electronic system is concerned, in order to achieve the best value of average efficiency, it is easy to select and replace microelectronic components (for example, MOSFET), and at the same time solve an electronic system of the power control device After experiments and tests, the inventor can set the driving voltage according to the Miller voltage of different MOSFETs by setting the driving voltage according to the Miller voltage of different MOSFETs through experiments and tests. In order to achieve a balance between loss and switching loss, all of the above are problems to be solved.

The main purpose of the present invention is to provide a power control device, which is used in a MOSFET driving environment. The power control device of the present invention is a power control device with dynamic drive capability adjustment, which can be set to drive according to the Miller voltage of different MOSFETs. Voltage, control conduction loss and switching loss to achieve a balance to achieve the best average efficiency, easy to select and replace MOSFET components, and at the same time take into account the electromagnetic interference EMI of an electronic system using the power control device.

Another object of the present invention is to provide a power control device, which is applied in a MOSFET driving environment. The power control device of the present invention is a power control device with dynamic drive capability adjustment, which is used in an electronic system using the power control device The driving voltage level can be adjusted intelligently and flexibly. The driving level can be adjusted according to the characteristics of the different MOS/MOSFETs being driven. For example, the higher the voltage level of the Miller platform driving the MOS, the higher the driving level will be adjusted and the conduction loss will be controlled. Balance with switching loss to achieve the best average efficiency, and control the drive voltage to take into account electromagnetic interference EMI.

Another object of the present invention is to provide a power control device, the following is to provide a driving environment applied to MOSFET, but not limited to this specific form, the power control device of the present invention is a power control device with dynamic driving ability adjustment In an electronic system using a power control device, the driving voltage level is adjusted according to the load and input voltage in the electronic system. When the load is lower, the driving voltage level is lower, for example, when the electronic system 115Vac AC input When (or less than 180Vac AC input), when 1/2 load to full load, the driving voltage is 12V, and when less than 1/2 load, the driving voltage slowly decreases, and the driving voltage is 9V when no load, in other words, with Different loads have different drive voltages, and the lower the load, the lower the drive voltage level. In addition, for example, when the electronic system is 230Vac AC input (or greater than 180Vac AC input), the driving voltage is 11V at full load, and when the load is less than 80%, the driving voltage is slowly reduced, and the driving voltage is 8V at no load. .

According to the above-mentioned objective, the present invention provides a power control device, which includes a controller and microelectronic components.

The controller, the controller can be an integrated circuit chip, a System On Chip (SOC), or part of the aforementioned components.

Microelectronic components, the microelectronic components can be a single active or passive microelectronic device (Microelectronic Device), or a combination of various active and/or passive microelectronic components, where the passive components are resistors, capacitors, inductors, Diodes, etc... and the active components are Metal-Oxide Semiconductor Field Effect Transistors (MOSFET), Complementary Metal-Oxide Semiconductor (CMOS) transistors, and bipolar Bipolar Junction Transistors (BJT), Laterally Diffused MOS (LDMOS) transistors, High Power MOS transistors, or other types of transistors Crystals etc...

The power control device of the present invention is a power control device with dynamic drive capability adjustment. In an electronic system using the power control device, the drive voltage level regulated by the controller can be intelligently and flexibly adjusted according to the different MOS/MOSFETs being driven Characteristics, adjust the drive level, for example, the higher the voltage level of the Miller platform driving the MOS, the higher the drive level will be adjusted, and the conduction loss and switching loss will be controlled to achieve the best average efficiency. Solve the problem of electromagnetic interference EMI on peripheral devices.

The power control device is a power control device with dynamic drive capability adjustment. In an electronic system that uses the power control device, the controller can adjust the drive voltage level required by the microelectronic components according to the load in the electronic system and the input voltage level. , When the load is lower, the driving voltage level is lower, for example, when the electronic system 115Vac AC input (or less than 180Vac AC input), at 1/2 load to full load, the driving voltage of the controller is 12V, which is less than At 1/2 load, the driving voltage is slowly reduced. When there is no load, the driving voltage is 9V. In other words, there are different driving voltages depending on the load, and the lower the load, the lower the driving voltage level. Furthermore, when the electronic system is 230Vac AC input (or greater than 180Vac AC input), the driving voltage is 11V at full load, and when the load is less than 80%, the driving voltage is slowly reduced, and the driving voltage is 8V at no load.

In an electronic system using a power control device, the drive voltage level regulated by the controller can be intelligently and flexibly adjusted. The drive level can be adjusted according to the characteristics of different microelectronic components driven, such as MOS/MOSFET characteristics. The higher the voltage level of the Miller platform driving the MOS, the higher the adjustment drive level, the control of the conduction loss and the switching loss to achieve the best average efficiency, and the control of the drive voltage to simultaneously solve the problem of electromagnetic interference EMI.

For a single electronic system with the power supply control device of the present invention, the drive current regulated by the controller and the microelectronic components are more efficient at the same drive current, lower drive voltage than higher drive voltage. The more obvious the system is when the load is lighter, and the electromagnetic interference EMI radiation (radiation) is better.

In addition, in terms of the driving voltage regulated by the controller and the microelectronics components, for the same driving voltage, the driving current is slower and then faster, the electromagnetic interference EMI is better, and the driving current is faster and then slower, the efficiency is better.

Compared with the high driving voltage, the low voltage has better efficiency, which is more obvious when the system is lightly loaded, and the electromagnetic interference EMI radiation (radiation) is better.

In order to enable those skilled in the art to understand the purpose, features, and effects of the present invention, the following specific embodiments and accompanying drawings are used to explain the present invention in detail as follows:

The following will explain the content of the present invention through embodiments, which are related to an e-book online teaching dynamic icon evaluation system. However, the embodiments of the present invention are not intended to limit any specific environment, application or special way of implementing the present invention. Therefore, the description of the embodiments is only for explaining the present invention, not for limiting the present invention. It should be noted that in the following embodiments and drawings, the components that are not directly related to the present invention are omitted and not shown; and for the sake of simple understanding, the dimensional relationship between the components is not shown in accordance with the actual scale.

Figure 1 is a schematic diagram showing the structure and operation of the power control device of the present invention. As shown in Figure 1, the power control device 1, the power control device 1 includes a controller 2, and a microelectronic component 3, wherein the power control device 1 can be located in an electronic system 10 and cooperate with the electronic system 10 operations.

The controller 2 can be an integrated circuit chip, a System On Chip (SOC), or part of the aforementioned components.

Microelectronic device 3, the microelectronic device 3 can be a single active or passive microelectronic device (Microelectronic Device), or a combination of various active and/or passive microelectronic devices, wherein the passive device is a resistor, a capacitor, Inductors, diodes, etc... and the active components are Metal-Oxide Semiconductor Field Effect Transistors (MOSFET), Complementary Metal-Oxide Semiconductor (CMOS) transistors, Bipolar Junction Transistors (BJT), Laterally Diffused MOS (LDMOS) transistors, High Power MOS transistors, or other types Transistor, etc...

The power control device 1 is a power control device with dynamic driving capability adjustment. In an electronic system 10 using the power control device 1, the driving voltage level regulated by the controller 2 can be adjusted intelligently and flexibly according to the different MOS/ MOSFET characteristics, adjust the drive level, for example, the higher the voltage level of the Miller platform driving the MOS, the higher the drive level will be adjusted, and the conduction loss and switching loss will be balanced to achieve the best average efficiency. At the same time, it solves the problem of electromagnetic interference EMI on peripheral devices.

The power control device 1 is a power control device with dynamic driving capability adjustment. In an electronic system 10 using the power control device 1, the controller can adjust the microelectronic components 3 required by the load and the input voltage in the electronic system 10 The driving voltage level, when the load is lower, the driving voltage level is lower, for example, when the electronic system 10 is 115Vac AC input (or less than 180Vac AC input), at 1/2 load to full load, controller 2 The regulated driving voltage is 12V, and when it is less than 1/2 load, the driving voltage is slowly reduced, and the driving voltage is 9V at no load. In other words, with different loads, there are different driving voltages. The lower the drive voltage level is. For another example, when the electronic system 10 is 230Vac AC input (or greater than 180Vac AC input), the driving voltage is 11V at full load, and when it is less than 80% load, the driving voltage is slowly reduced, and the driving voltage is at no load. It is 8V.

In the electronic system 10 using the power control device 1, the driving voltage level regulated by the controller 2 can be adjusted intelligently and flexibly. The driving level can be adjusted according to the characteristics of the different microelectronic components 3 driven, for example, the characteristics of the MOS/MOSFET. For example, the higher the voltage level of the Miller platform driving the MOS, the higher the drive level will be adjusted to control the conduction loss and the switching loss to achieve the best average efficiency. Interference EMI is a problem for peripheral devices.

For a single electronic system 10 with the power control device 1 of the present invention, the driving current regulated by the controller 2 and the microelectronic element 3 are as follows. At the same driving current, the driving voltage is lower than the driving voltage is higher. The efficiency is good, the more obvious when the system is lightly loaded, and the electromagnetic interference EMI radiation (radiation) is better.

In addition, for the driving voltage regulated by the controller 2 and the microelectronics 3, at the same driving voltage, the driving current is slower and then faster for better electromagnetic interference EMI, and the driving current is faster and then slower for better efficiency.

Compared with the high driving voltage, the low voltage is more efficient. It is more obvious when the system is lightly loaded, and the electromagnetic interference EMI radiation (radiation) is better.

Figure 2(a) is a schematic diagram showing the correlation between the driving voltage of the microelectronic element and the average conversion efficiency of the electronic system under different input AC voltages of the electronic system shown in Figure 1.

When the microelectronic element 3 is a MOSFET element, when the input AC voltage Vac=115V or Vac=230V of the different electronic system 10, the lower the driving voltage of the microelectronic element 3 MOSFET, the higher the average conversion efficiency of the electronic system 10 Okay, where the conversion efficiency of the electronic system 10 is (output power/input power).

In addition, when the microelectronic device 3 is a MOSFET device, when the input AC voltage Vac=115V or Vac=230V of the different electronic system 10, the no-load power consumption of the electronic system 10, and when the microelectronic device 3 MOSFET When the driving voltage is lower, it helps to reduce the no-load power consumption of the electronic system 10. In addition, when the input AC voltage of the electronic system 10 is low, for example, when the input AC voltage Vac=115V, the no-load power consumption of the electronic system 10 The consumption is low.

Furthermore, when the microelectronic device 3 is a MOSFET device, the Low Line effect of different driving voltages regulated by the controller 2 in the electronic system 10, for example, 9Vcc (9V), 12Vcc (12V), 16Vcc (16V), 24Vcc (24V), depending on the output current of the power control device 1, the electronic system 1 has different conversion efficiency.

In addition, when the microelectronic device 3 is a MOSFET device, the High Line effect of different driving voltages regulated by the controller 2 in the electronic system 10, for example, 9Vcc (9V), 12Vcc (12V), 16Vcc (16V), 24Vcc (24V), depending on the output current of the power control device 1, the electronic system 1 has different conversion efficiency.

FIG. 2 is a schematic diagram showing an embodiment of the power control device of the present invention and its operation status. As shown in Figure 2, the power control device 1, the power control device 1 includes a controller 2, and microelectronics 3, wherein the power control device 1 can be located in an electronic system 11, and cooperate with the electronic system 11 operation.

The controller 2 can be an integrated circuit chip, a System On Chip (SOC), or part of the aforementioned components.

Microelectronic device 3, the microelectronic device 3 can be a single active or passive microelectronic device (Microelectronic Device), or a combination of various active and/or passive microelectronic devices, wherein the passive device is a resistor, a capacitor, Inductors, diodes, etc... and the active components are Metal-Oxide Semiconductor Field Effect Transistors (MOSFET), Complementary Metal-Oxide Semiconductor (CMOS) transistors, Bipolar Junction Transistors (BJT), Laterally Diffused MOS (LDMOS) transistors, High Power MOS transistors, or other types Transistor, etc...

The power control device 1 is a power control device with dynamic drive capability adjustment. In an electronic system 11 using the power control device 1, the drive voltage level regulated by the controller 2 can be adjusted flexibly and intelligently according to the different MOS/ MOSFET characteristics, adjust the drive level, for example, the higher the voltage level of the Miller platform driving the MOS, the higher the drive level will be adjusted to control the conduction loss and the switching loss to achieve the best average efficiency effect and control the drive Voltage and simultaneously solve the problem of electromagnetic interference EMI on peripheral devices

As shown in Figure 2, the power control device 1 is located in an electronic system 11, which has a power transformer including a leakage inductance Lleak, a primary winding Lp, and a secondary winding Ls. The secondary output stage includes a diode D and an output capacitor C. The controller 2 of the power controller 1 uses an output drive signal in the form of a pulse having an on time (Ton) and an off time (Toff) to control the on state and the off state of the microelectronic element 3 as the MOSFET.

The input voltage of the electronic system 11 is DC Vi. When the microelectronic component 3 (switch 3) of the MOSFET is turned on, the input power is stored in the primary winding Lp of the transformer. This is because when the microelectronic component 3 (switch 3) of the MOSFET is turned on ), the diode D becomes reverse biased. Then, when the microelectronic element 3 (switch 3) of the MOSFET is turned off, the rectified input power is transferred to a load Z across the capacitor C. This is because when the microelectronic element 3 (switch 3) of the MOSFET is turned off, the diode D becomes forward biased. The diode D functions as an output rectifier and the capacitor C functions as an output filter, and the output voltage Vo is adjusted to the load Z. The controller 2 generates appropriate switch drive pulses to control the on-time and off-time of the microelectronic element 3 (switch 3) which is a MOSFET and adjust the output voltage Vo. The controller 2 is based on the sensed output voltage Vs and sensed primary in the previous switching cycle of the switching power converter in multiple operation modes including PWM (Pulse Width Modulation) and/or PFM (Pulse Frequency Modulation) modes The side current Id uses a feedback loop to control the microelectronic element 3 (switch 3) as a MOSFET.

The output voltage Vo is reflected across to the primary winding Lp and is input to the controller 2 as the voltage Vs. Based on the sensed output voltage, the controller 2 determines the operating frequency of the switching power converter, which specifies the frequency of the on-time (TON) and off-time (TOFF) in the output driving signal.

FIG. 3 is a schematic diagram showing another embodiment and operation of the power control device of the present invention. As shown in Figure 3, the power control device 1, the power control device 1 includes a controller 2, and a microelectronic component 3, wherein the power control device 1 can be located in an electronic system 12 and cooperate with the electronic system 12 operation.

The controller 2 can be an integrated circuit chip, a System On Chip (SOC), or part of the aforementioned components.

A microelectronic device 3, the microelectronic device 3 can be two of various active or passive microelectronic devices (Microelectronic Device), or a combination of two of various active and/or passive microelectronic devices, wherein the passive device is Resistors, capacitors, inductors, diodes, etc... and the active components are Metal-Oxide Semiconductor Field Effect Transistors (MOSFET), Complementary Metal-Oxide Semiconductor (CMOS) ) Transistor, Bipolar Junction transistors (BJT), Laterally Diffused MOS (LDMOS) Transistor, High Power MOS transistor (High Power MOS transistor) , Or other types of transistors, etc...

The power control device 1 is a power control device with dynamic drive capability adjustment. In an electronic system 12 using the power control device 1, the drive voltage level regulated by the controller 2 can be adjusted flexibly and intelligently according to the different MOS/ MOSFET characteristics, adjust the drive level, for example, the higher the voltage level of the Miller platform driving the MOS, the higher the drive level will be adjusted to control the conduction loss and the switching loss to achieve the best average efficiency. Drive voltage to simultaneously solve the problem of electromagnetic interference EMI on peripheral devices

As shown in Figure 3, the power control device 1 is located in an electronic system 12, which has a power transformer including a leakage inductance Lleak, a primary winding Lp, and a secondary winding Ls. The secondary output stage includes a diode D and an output capacitor C. The controller 2 of the power controller 1 uses an output drive signal in the form of a pulse with an on time (Ton) and an off time (Toff) to control the first switch 31 and the second switch of the microelectronic element 3 as two MOSFETs 32 on state and off state.

The input voltage of the electronic system 12 is DC Vi. When the microelectronic components 3 (the first switch 31 and the second switch 32) of the MOSFET are turned on, the input power is stored in the transformer Lp. This is because when the microelectronics of the MOSFET are turned on The element 3 (the first switch 31, the second switch 32) becomes the diode D under reverse bias. Then, when the microelectronic element 3 (the first switch 31 and the second switch 32) of the MOSFET is turned off, the rectified input power is transferred to a load Z across the capacitor C. This is because when the microelectronic element 3 ( When the first switch 31 and the second switch 32), the diode D becomes forward biased. The diode D functions as an output rectifier and the capacitor C functions as an output filter, and the output voltage Vo is adjusted to the load Z.

The controller 2 generates appropriate switch drive pulses to control the on-time and off-time of the microelectronic components 3 (the first switch 31 and the second switch 32) which are MOSFETs, and adjust the output voltage Vo. The controller 2 is based on the sensed output voltage Vo and sensed primary in the previous switching cycle of the switching power converter in multiple operation modes including PWM (Pulse Width Modulation) and/or PFM (Pulse Frequency Modulation) modes The side current Id uses a feedback loop to control the microelectronic element 3 (switch 3) as a MOSFET.

The output voltage Vo is reflected to cross the primary winding LP and is input to the controller 2 as a voltage Vs. Based on the sensed output voltage, the controller 2 determines the operating frequency of the switching power converter, which specifies the frequency of the on-time (TON) and off-time (TOFF) in the output driving signal.

4(a) is a schematic diagram for showing an embodiment of the power control device of the present invention. As shown in Fig. 4(a), the power control device 1 includes a controller 2 and a microelectronic component 3.

The controller 2 can be an integrated circuit chip, a System On Chip (SOC), or part of the aforementioned components.

The microelectronic device 3, the microelectronic device 3 can be a single active or passive microelectronic device, or a combination of various active and/or passive microelectronic devices. Here, the microelectronic device System 3 includes MOS and resistor R. The output terminal of controller 2 is connected to the MOS gate and one end of resistor R.

4(b) is a schematic diagram showing an embodiment of the power control device of the present invention. As shown in Fig. 4(b), the power control device 1 includes a controller 2 and a microelectronic component 3.

The controller 2 can be an integrated circuit chip, a System On Chip (SOC), or part of the aforementioned components.

The microelectronic component 3 can be a single active or passive microelectronic component (Microelectronic fevice), or a combination of various active and/or passive microelectronic components. Here, the microelectronic component The 3 series include NPN type transistors and PNP type transistors.

4(c) is a schematic diagram for showing an embodiment of the power control device of the present invention. As shown in Fig. 4(c), the power control device 1 includes a controller 2 and a microelectronic component 3.

The controller 2 can be an integrated circuit chip, a System On Chip (SOC), or part of the aforementioned components.

The microelectronic component 3, the microelectronic component 3 can be a single active or passive microelectronic device (Microelectronic Device), or a combination of various active and/or passive microelectronic devices, where the microelectronic device System 3 includes MOS and resistor R. The output terminal of controller 2 is connected to one end of resistor R and connected to the drain or source of MOS.

FIG. 5 is a schematic diagram showing the change of driving voltage and driving current Ion regulated by the controller of the power supply control device of the present invention.

As shown in Figure 5, here, for example, the microelectronic element 3 is a MOSFET; T1 is the first rise time of the drive voltage V and the drive current Ion, T2 is the second rise time, and T3 is the first fall time, And T4 is the second fall time.

During the first rise time of T1, the driving voltage V rises from VL to the first voltage level V1 and the drive current Ion rises; wherein, during the time interval T1, the gate-to-source voltage VGS of the microelectronic element 3 rises to A first voltage level V1 higher than the threshold voltage VTH of the microelectronic element 3 and the microelectronic element 3 starts to conduct electricity. During this period, the drain-to-source voltage VDS of the microelectronic device 3 maintains a high voltage.

In the second rising time of T2, the driving voltage V will rise to V2 and the driving current Ion will rise. During the time interval T2, the drain-to-source voltage VDS of the microelectronic device 3 drops to a low level and the gate reaches The source voltage VGS rises and finally reaches a near high voltage VH(Vcc) between T2 and T3.

Between T2 and T3, the drive voltage V rises to the high voltage VH, and the drive current Ion rises.

In the first falling time of T3, the driving voltage V drops from the high voltage VH to V2, and the driving current Ion drops. During the time interval T3, the gate-to-source voltage VGS of the microelectronic element 3 drops from VCC to a value higher than the threshold. One of the limit voltages VTH is a voltage V2, and the drain-to-source voltage VDS of the microelectronic device 3 remains at a low level.

In the second falling time of T4, the driving voltage V drops from the voltage V2 to V1, and then to VL, and the driving current Ion drops. During the time interval T4, the drain-to-source voltage VDS of the microelectronic element 3 reaches the maximum voltage , And the drain-to-source voltage VDS begins to decrease at a subsequent time. In addition, the gate-to-source voltage VGS of the microelectronic device 3 decreases to zero during the time interval T4. Once the gate-to-source voltage VGS drops below the threshold voltage VTH, the microelectronic element 3 is turned off.

FIG. 6 is a schematic diagram showing a waveform diagram illustrating the turn-on operation of the driving voltage regulated by the controller of the power control device of the present invention.

Here, for example, the microelectronic element 3 is a MOSFET; at the first rise time of T1, the driving voltage V rises from VL to the first voltage level V1; wherein, during the time interval T1, the gate of the microelectronic element 3 is The pole voltage VGS rises to a first voltage level V1 higher than the threshold voltage VTH of the microelectronic element 3 and the microelectronic element 3 starts to conduct electricity. During this period, the drain-to-source voltage VDS of the microelectronic device 3 maintains a high voltage.

During the second rise time of T2, the driving voltage V will rise to V2, wherein, during the time interval T2, the drain-to-source voltage VDS of the microelectronic device 3 decreases to a low level and the gate-to-source voltage VGS increases , And finally reach close to the high voltage VH(Vcc) afterwards.

FIG. 7 is a schematic diagram showing a waveform diagram illustrating the turn-off operation of the driving voltage regulated by the controller of the power supply control device of the present invention.

Here, for example, the microelectronic element 3 is a MOSFET; in the first fall time of T3, the driving voltage V drops from the high voltage VH to V2, and the driving current Ion drops, wherein, during the time interval T3, the gate of the microelectronic element 3 The pole-to-source voltage VGS decreases from VCC to a voltage V2 which is higher than the threshold voltage VTH, and the drain-to-source voltage VDS of the microelectronic device 3 remains at a low level.

In the second falling time of T4, the driving voltage V drops from the voltage V2 to V1, and then to VL, and the driving current Ion drops. During the time interval T4, the drain-to-source voltage VDS of the microelectronic element 3 reaches the maximum voltage , And the drain-to-source voltage VDS begins to decrease at a subsequent time. In addition, the gate-to-source voltage VGS of the microelectronic device 3 decreases to zero during the time interval T4. Once the gate-to-source voltage VGS drops below the threshold voltage VTH, the microelectronic element 3 is turned off.

Based on the above embodiments, we can obtain a power control device of the present invention, which is applied in a MOSFET driving environment. The power control device of the present invention is a power control device with dynamic drive capability adjustment, which can be adjusted according to the size of different MOSFETs. Low voltage, set the drive voltage, control the conduction loss and switching loss to achieve the best value of average efficiency, easy to select and replace MOSFET components, and at the same time solve the problem of electromagnetic interference EMI of an electronic system of the power control device on peripheral devices . The power control device of the present invention has the following advantages:

The power control device of the present invention is a power control device with dynamic drive capability adjustment, which can set the drive voltage according to the Miller voltage of different MOSFETs, control the conduction loss and switching loss to achieve a balance, achieve the best value of average efficiency, and is easy for MOSFET components Alternatives are selected, and at the same time the problem of electromagnetic interference EMI of an electronic system of the power control device on peripheral devices is solved.

In an electronic system using a power control device, the driving voltage level can be adjusted intelligently and flexibly. The driving level can be adjusted according to the characteristics of the different MOS/MOSFETs being driven. For example, the higher the voltage level of the Miller platform driving the MOS, the higher Adjust the drive level higher, control the conduction loss and the switching loss to achieve the best average efficiency, control the drive voltage and solve the problem of electromagnetic interference EMI on peripheral devices.

In an electronic system using a power control device, the driving voltage level is adjusted according to the load and input voltage in the electronic system. When the load is lower, the driving voltage level is lower, for example, when the electronic system 115Vac AC input (Or when the AC input is less than 180Vac), when the load is 1/2 to full load, the driving voltage is 12V, and when it is less than 1/2 load, the driving voltage is slowly reduced, and the driving voltage is 9V at no load, in other words, with the load There are different driving voltages, and the lower the load, the lower the driving voltage level. In addition, for example, when the electronic system is 230Vac AC input (or greater than 180Vac AC input), the driving voltage is 11V at full load, and when the load is less than 80%, the driving voltage is slowly reduced, and the driving voltage is 8V at no load. .

The above descriptions are only the preferred embodiments of the present invention and are not intended to limit the scope of the present invention; all other equivalent changes or modifications made without departing from the spirit of the present invention should be included in the following patents Within range.

1: Power control device 2: Controller 3: Microelectronic components 10: Electronic system 11: Electronic system 12: Electronic system 31: The first switch 32: The second switch

Figure 1 is a schematic diagram showing the structure and operation of the power control device of the present invention; Figure 2 is a schematic diagram showing an embodiment of the power control device of the present invention and its operation status; Figure 3 is a schematic diagram showing another embodiment of the power control device of the present invention and its operation status; 4(a) is a schematic diagram showing an embodiment of the power control device of the present invention; 4(b) is a schematic diagram showing an embodiment of the power control device of the present invention; 4(c) is a schematic diagram for showing an embodiment of the power control device of the present invention; Figure 5 is a schematic diagram showing the change of the driving voltage and the driving current Ion regulated by the controller of the power control device of the present invention; FIG. 6 is a schematic diagram showing a waveform diagram illustrating the turn-on operation of the driving voltage regulated by the controller of the power control device of the present invention; and FIG. 7 is a schematic diagram showing a waveform diagram illustrating the turn-off operation of the driving voltage regulated by the controller of the power supply control device of the present invention.

1: Power control device

2: Controller

3: Microelectronic components

4: Electronic system

Claims (10)

A power control device, which has dynamic driving capability adjustment, and includes: Controller; and A microelectronic element, the controller is connected with the microelectronic element, can set the driving voltage of the microelectronic element, control the conduction loss and the switching loss to achieve a balance, and achieve the best average efficiency value. The power control device described in item 1 of the scope of patent application, wherein the power control device is located in an electronic system and works with the electronic system. As for the power control device described in claim 1, wherein the controller can be one of an integrated circuit chip and a system-on-a-chip, or is, or part of the integrated circuit chip and system Single wafer components. According to the power control device described in claim 1, wherein the microelectronic device is one of active and passive microelectronic devices, or a combination of active and/or passive microelectronic devices. The power control device described in item 4 of the scope of patent application, wherein the passive element is selected from at least one of resistance, capacitor, inductor, and diode, and the active element is selected from metal oxide semiconductor field effect power At least one of crystalline MOSFET, complementary metal oxide semiconductor CMOS transistor, bipolar junction transistor BJT, laterally diffused metal oxide semiconductor LDMOS transistor, and high power metal oxide semiconductor transistor (High Power MOS Transistor) One. A power control device, which has dynamic driving capability adjustment, and includes: Controller; and A microelectronic component. The controller is connected to the microelectronic component and can set the driving voltage of the microelectronic component. The controller adjusts the driving voltage level according to the characteristics of the microelectronic component being driven. When driving the microelectronic component The higher the voltage level of the Miller platform, the higher the drive level will be adjusted to control the conduction loss and the switching loss to achieve the best value of average efficiency, and control the drive voltage to take into account electromagnetic interference EMI. For the power control device described in item 6 of the scope of patent application, the power control device is located in an electronic system and works with the electronic system. For the power control device described in item 6 of the scope of the patent application, the controller can be one of an integrated circuit chip and a system-on-a-chip, or is, or part of the integrated circuit chip and system Single wafer components. According to the power control device described in item 6 of the scope of patent application, the microelectronic element is one of active and passive microelectronic elements, or a combination of active and/or passive microelectronic elements. The power control device according to item 9 of the scope of patent application, wherein the passive element is selected from at least one of resistance, capacitor, inductor, and diode, and the active element is selected from metal oxide semiconductor field effect power supply At least one of crystalline MOSFET, complementary metal oxide semiconductor CMOS transistor, bipolar junction transistor BJT, laterally diffused metal oxide semiconductor LDMOS transistor, and high power metal oxide semiconductor transistor (High Power MOS Transistor) One.

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