TW201830685A - Photonics interposer optoelectronics - Google Patents

Abstract

In one embodiment an optoelectronic system can include a photonics interposer having a substrate and a functional interposer structure formed on the substrate, a plurality of through vias carrying electrical signals extending through the substrate and the functional interposer structure, and a plurality of wires carrying signals to different areas of the functional interposer structure. The system can further include one or more photonics device integrally formed in the functional interposer structure, and one or more prefabricated component attached to the functional interposer structure.

Description

Photoelectric system with photon interposer

CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority from US Provisional Application No. 62 / 426,100, "Photoelectric System with Photonic Interposer" filed on November 23, 2016, the entire contents of which are hereby incorporated by reference. This application also claims the priority of “Photonic System with Photonic Intermediate Layer” in US Non-Provisional Application No. 15 / 975,349, filed on October 27, 2017, the entire contents of which are hereby incorporated by reference.

Government Rights Statement This invention was made with government support of the United States Department of Defense under contract number FA8650-15-2-5220. The government may have certain rights in the invention.

The present invention is generally related to photons, and particularly to photonic structures and manufacturing processes.

Commercially available photonic integrated circuits are fabricated on, for example, bulk silicon wafers or silicon-on-insulator wafers. A commercially available pre-made photonic integrated circuit wafer may include a waveguide member for transmitting optical signals between different regions of a pre-made photonic integrated circuit wafer. Commercially available waveguide members have a rectangular or ridged geometry and are made of silicon (single or polycrystalline) or silicon nitride. A commercially available photonic integrated circuit wafer can be used on a system having a photonic integrated circuit wafer disposed on a printed circuit board.

Through the provision of photonic structures in one aspect, the disadvantages of the prior art are overcome and provide additional advantages.

In one embodiment, a photovoltaic system may include a photonic interposer having a substrate and a functional interposer structure formed on the substrate, and a plurality of channels extending through the substrate and the functional interposer structure to be transmitted. The electrical signals, the plurality of wires, transmit electrical signals to different regions of the functional interposer structure. The system may further include one or more photonic elements integrally formed in the functional interposer structure; and one or more prefabricated components attached to the functional interposer structure.

Additional features and advantages are understood through the techniques of the present invention.

Aspects of the invention and some of its features, advantages, and details are explained more thoroughly with reference to the non-limiting embodiments shown in the following drawings. Descriptions of well-known materials, manufacturing tools, processing techniques and so on are omitted to avoid obscuring the invention in detail. It should be understood, however, that while the detailed description and specific examples, while pointing out various aspects of the invention, are presented by way of example only and not limitation. Various substitutions, modifications, additions, and / or permutations within the spirit and / or scope of the basic inventive concept of the present invention will be apparent to those skilled in the art from the present disclosure.

Referring to the schematic diagram of FIG. 1, an embodiment of a photovoltaic system 10 is shown. A photovoltaic system 10 may include a photonic interposer 100 having a substrate 110 and a functional interposer structure 120 formed on the substrate 110. A plurality of channels 130 extend through the substrate 110. The photovoltaic system 10 may include: one or more prefabricated members 160 attached to the functional interposer structure 120; and one or more photonic elements 150 formed in the functional interposer structure 120.

The one or more prefabricated components 160 may include one or more prefabricated components selected from the group consisting of a prefabricated laser die wafer, a preformed photonic integrated circuit wafer, and a prefabricated semiconductor wafer. A prefabricated semiconductor wafer may be a wafer with active and / or passive electronic devices (complementary metal oxide semiconductors, radio frequency components, micro-electro-mechanical systems, discrete components).

The one or more photonic elements integrally formed in the functional interposer structure 120 may, for example, include one or more photonic elements, such as: one or more waveguides, photodetectors, couplers, modulators, polarizers, Circuit or resonator.

In one embodiment, a method for manufacturing an optoelectronic system 10 is described with reference to FIGS. 2 to 6.

Referring to Fig. 2, a photovoltaic system 10 is shown in an initial stage of manufacturing. The photovoltaic system 10 may include a substrate 110 and a functional interposer structure 120. The substrate 110 can be formed of various alternative materials, such as silicon, silicon dioxide, glass, or sapphire. The functional interposer structure 120 may be manufactured by using a plurality of interposer material layers through appropriate deposition and patterning. These layers may define a body 122 of the functional interposer structure 120. The interposer material layer defining the body 122 of the functional interposer structure 120 may include, for example, silicon, silicon dioxide, or a combination of layers having such materials.

The functional interposer structure 120 may include one or more feature-forming layers, such as one or more metallization layers, hard-stop layers, or photonic devices, such as waveguide material layers, to be formed in the functional interposer structure 120. A functional feature and an interposer material layer are formed in a region between the plurality of functional features. The interposer material intermediate that defines the functional characteristics of the body 122 of the functional interposer structure 120 may provide, for example, one or more electrical insulation, optical insulation, structural integrity, or structural spacing. The interposer material layer defining the functional interposer structure 120 formed of a dielectric material may be considered as the dielectric layer of the photonic interposer 100.

In one embodiment, as shown in FIG. 2, the functional interposer structure 120 may be a multi-layer structure having layers defining various characteristics. The channels 130 extending through the substrate 110 and the functional interposer structure 120 can be formed by appropriate patterning. For example, a layer of interposer material is deposited to a height of 202, and then a photomask is formed, an etching is performed to define a channel trench, and a metallization is deposited. Prior to layer 1404, the channel trench is filled with a conductive material and planarized to a height 202. The channels 134 extending through the functional interposer structure 120 may be formed by appropriate patterning, such as deposition on one or more layers of interposer material to a height of 202 (for lower vias) or a height of 204 (for lower vias) High vias) followed by photomasks, etching to define channel trenches, and before metallization layer 1404 (for lower vias) or metallization layer 1406 (for higher vias) is deposited. The conductive material fills the channel trenches and is planarized to a height of 202 (for lower vias) or a height of 204 (for higher vias).

The metallization layers 1402, 1404, 1406 define a plurality of wires 140. The plurality of wires 140 defined by the metallization layers 1402, 1404, and 1406 may extend horizontally through the plurality of regions of the functional interposer structure 120. The metallization layers 1402, 1404, 1406 are generally transparent: one or more interposer material layers are deposited to at least the top height of the corresponding metallization layers 1402, 1404, 1406, and etched to define recesses for receiving conductive materials Formed by filling a cavity with a conductive material and planarizing to the top height of the corresponding metallization layers 1402, 1404, 1406. The metallization layers 1402, 1404, and 1406 are also generally formed by depositing a metallization layer with a uniform thickness and then photomasking and etching to remove the layer material from the unwanted areas. The metallization layers 1402, 1404, and 1406 may also be formed of metal or other conductive materials. The wires 140 defined by the metallization layer 1402 may be electrically connected to one or more channels 130 for vertically and horizontally distributing one or more control logic and / or power signals to different regions of the functional interposer structure 120. . The wires 140 defined by the metallization layer 1404 may be electrically connected to one or more channels 134 for horizontally distributing one or more electrical control, logic, and / or power signals to different regions of the functional interposer structure 120. The wires 140 defined by the metallization layer 1406 may be electrically connected to one or more channels 134 for horizontally distributing one or more control, logic, and / or power signals to different regions of the functional interposer structure 120.

The functional interposer structure 120 may be formed therein with an alignment member 210 provided by a hard stop material layer to align a prefabricated member. As can be seen from this embodiment, improvements in the operation of prefabricated components can be achieved by providing precise alignment. In the embodiment of FIG. 2, the alignment member 210 may be provided by a hard stop material layer deposited on an interposer material layer. An alignment member 210 provided by a layer of hard stop material may be deposited at a precise lift position of the functional interposer structure 120 to provide a preform for attaching a prefabricated member to the functional interposer structure 120 as described in this specification. Precise vertical alignment of components. Precise lift control can reduce edge coupling losses between several photonic elements. The alignment member 210 provided by a hard-stop material layer may be formed of a material having a different etch selectivity than a material layer defining the body 122 of the functional interposer structure 120. The alignment member 210 provided by a layer of hard stop material may be deposited to a thickness of about 10 nm to 200 nm, and in one embodiment, to a thickness between about 20 nm to 80 nm. To manufacture the alignment member 210, an interposer material may be deposited on a layer of hard stop material defining the alignment member 210, and then may be etched back to form a cavity 402 to expose the alignment member 210. In one embodiment, in the case where the body 122 is formed of silicon dioxide, the alignment member 210 may be made of a material having an etch selectivity different from that of silicon dioxide, such as titanium nitride, silicon carbonitride or amorphous silicon form.

Referring to the additional features shown in the middle manufacturing stage of FIG. 2, the photovoltaic system 10 may include an alignment member 220 provided by a metal stack. The alignment member 220 provided by the metal stack shown in the manufacturing intermediate stage view in FIG. 2 may include a metal pillar 221, a barrier layer 222, and a structure 420 (as shown in a later stage view in FIG. 4). The alignment member 220 provided by the metal stack may provide vertical alignment along an axis parallel to the z-axis of the reference coordinate system 15 to accurately vertically align with a prefabricated member for attachment to the functional interposer structure 120 such that the prefabrication The height of the component can be accurately established. Accurate lift control can reduce edge coupling losses between several photonic elements. The alignment member 220 provided by the metal stack may be manufactured to have a predetermined total thickness within a small tolerance, so that the distance between the metallization layer 1404 and the top height of the metal stack defining the alignment member 220 may be accurately established. Generally speaking, the top-height formation structure 420, such as a metal bump structure or a plated structure (FIG. 4), may be heated and re-welded to connect a prefabricated component thereto. The distribution and volume of the top height forming structure 420 and the heating parameters can be controlled so that the height of the metal stack defining the alignment member 220 is not accidentally affected by the reflow of the top height forming structure 420 (FIG. 4).

Referring to the additional features shown in the intermediate manufacturing stage view of FIG. 2, the optoelectronic system 10 may include one or more photonic elements integrally formed with the functional interposer structure 120. As shown in FIG. 2, one or more photonic elements integrally formed with the functional interposer structure 120 may include a waveguide 150A defined by a waveguide material layer 1502. In one embodiment, the waveguide 150A may be fabricated by depositing a waveguide material layer 1502, a mask, and etching to remove unnecessary areas of the waveguide material layer 1502, and depositing an interposer material layer on the remaining portion of the waveguide material layer. The waveguide material layer 1502 defining the waveguide 150A may include, for example, single crystal silicon, polycrystalline silicon, amorphous silicon, silicon nitride, or silicon oxynitride. Waveguides made of different materials within the functional interposer structure 120 may be used to perform different functions. For example, a waveguide formed of silicon may be selected to manufacture a waveguide included in an active device such as a photodetector or modulator. Dielectric waveguides, such as formed from silicon nitride, are suitable for transmitting optical signals over longer distances. Other materials, such as amorphous silicon, may be selected for applications that emphasize the balance between current-conducting and light-conducting characteristics. The patterning of the waveguide 150A may include a patterning of the material defining the waveguide 150 and a patterning of the material surrounding the waveguide 150A, the refractive index of the material being different from the refractive index of the material of the waveguide 150A. The patterning of the waveguide 150A may include patterning to define different alternative geometries.

The functional interposer structure 120 may include one or more integrally formed photonic elements that supplement or replace one or more waveguides (eg, waveguide 150). For example, the functional interposer structure 120 may include one or more integrated photon regions, such as the photon region 240, which may be formed at, for example, a position A formed on the substrate 110, or a substrate 110 formed on the photon interposer 100. Position B in the functional interposer structure 120 at the height above. As shown in FIG. 7, the integrated photon region 240 may include one or more layers defining the functional interposer structure 120, and the layers defining the functional interposer structure 120 are patterned to define a photonic element 150B, that is, Light detector. As shown in FIG. 8, the integrated photon region 240 may include one or more layers defining the functional interposer structure 120, and the layers defining the functional interposer structure 120 are patterned to define different sizes, materials, and shapes. Waveguides, that is, photonic elements 150C, 150D, 150E. As shown in FIG. 9, the integrated photonic region 240 may include one or more layers defining a functional interposer structure 120, and the layers defining the functional interposer structure 120 are patterned to define a photonic element 150F. That is the grating coupler. As shown in FIG. 10, the integrated photon region 240 may include one or more layers defining the functional interposer structure 120. The layer defining the functional interposer structure 120 is patterned to define a photonic element 150G. Modulator. In one embodiment, the photon interposer 100 may include a photon region 240, which is distributed throughout the photon interposer 100, and the photon interposer 100 may include each of the integrated photonic elements 150B-150G described with reference to FIGS. 7-10. . In one embodiment, the photon region 240 represents a photon region that is manufactured to define one or more polarizers, beam splitters, or resonators.

In some embodiments, the material used to form the photonic device, such as monocrystalline silicon, polycrystalline silicon, and germanium can be epitaxially grown. It can be understood in this embodiment that while the thick silicon layer can accommodate epitaxial growth, the obtained photonic element may exhibit light loss through the thick silicon layer. In one embodiment, in order to accommodate the epitaxial growth of the epitaxial growth material, a structure having a silicon seed layer (silicon template) on an insulator may be provided. To provide a structure with a silicon seed layer, a silicon-on-insulator (SOI) wafer (having a thin oxide layer on the bulk silicon substrate and a thin silicon layer on the oxide) can be selected for fabrication Substrate 110. In an embodiment where a silicon-on-insulator wafer is used to fabricate the photonic interposer 100, the substrate 110 is provided by a main silicon substrate of a silicon-on-insulator wafer.

Epitaxial growth can also be performed by epitaxial growth on a silicon seed layer formed on glass. Therefore, the choice of silicon on the glass wafer (having a thin silicon layer formed on a bulk silicon substrate) used to fabricate the substrate 110 can accommodate epitaxial growth of epitaxial growth materials and Crystalline silicon, polycrystalline silicon or germanium). In one embodiment, the silicon on the glass wafer is used to make the photonic interposer 100. The substrate 110 is provided by a glass substrate of silicon on the glass wafer.

In one embodiment, the functional interposer structure 120 may be fabricated as a silicon-on-insulator interface at a height above the substrate 110. For example, a thick silicon layer above a top height on the substrate 110, such as epitaxial growth on a substrate 110 formed of silicon, can be separated by a process of local or non-local injection of oxygen (SIMOX) to Define a thin silicon layer and a buried oxide layer under the thin silicon layer.

With appropriate manufacturing methods, photonic elements provided by or having waveguides of different waveguide materials can be fabricated at any height of the functional interposer structure 120. In one embodiment, the epitaxially grown photonic element can be fabricated on the substrate position of the functional interposer structure 120, and a photonic element formed from a deposition material, such as deposited silicon nitride or silicon oxynitride, can be formed on Above the substrate height of the functional interposer structure 120. The functional interposer structure 120 may be manufactured to conduct light between the various heights through evanescent coupling between the various waveguides at different heights.

Various processes may be performed to modify the grain structure of a material layer from which various photonic elements may be manufactured. In one embodiment, a material layer may be composed of polycrystalline silicon. In one embodiment, ion implantation may be performed to modify the silicon crystal structure of a material layer. In the modification, polycrystalline silicon materials can be transformed into non-polycrystalline silicon materials. The ion-implanted species may include one or more silicon, argon (such as Ar or Ar ⁺ ), xenon (such as Xe or Xe ⁺ ), or germanium. On the other hand, an annealing treatment, such as a recrystallization annealing treatment, may be performed to further improve a grain structure of a material layer. In one embodiment, with or without ion implantation, a material layer may be annealed to modify a grain structure.

In order to enhance the performance of the photonic element integrally formed in the functional interposer structure 120, the photonic interposer 100 may include a feature to reduce the coupling between the integrally formed photonic element and the substrate 110. In one embodiment, the substrate 110 may be formed of glass to reduce coupling. In one embodiment, the substrate 110 may include deep trench insulation features in a region of the photonic interposer 100 with a photonic element integrally formed.

Fig. 3 illustrates the photovoltaic system 10 from Fig. 2 in a subsequent intermediate stage of manufacturing. Referring to FIG. 3, the substrate 110 may be ground to expose the conductive material of the channel 130, and additional patterning may be performed to form a redistribution layer wire 170. For example, an interposer material layer, for example, the interposer material layer defining the body 122, can be deposited after polishing the substrate planarized to a bottom height of the channel 130 in the stage shown in FIG. 2 On the substrate 110, a redistribution layer 1702 is then deposited and masked and etched to remove unwanted materials of the redistribution layer 1702 to define the redistribution layer wires 170 and deposit another one or more interposer material layers, and then The one or more interposer material layers are recessed to accommodate the bump underlying metal structure. In another embodiment, one or more interposer material layers, for example, the material is an interposer material layer defining the body 122, can be deposited, etched to define a cavity for receiving a conductive material, and the cavity can be Filled with a conductive material to define the redistribution layer 1702, and then deposit one or more interposer material layers, and recess the one or more interposer material layers to accommodate the bump underlying metal structure. In one embodiment, a photoresist template may be coated and filled with a conductive material to form a redistribution layer 1702.

The channels 130 and 134 may distribute control signals, logic signals, and / or power signals between the functional interposer structure 120 and the back surface of the interposer 100. The channels 130 and 134 and the wires 140 and 170 can help to fan out the power control and power signals. In one example, the metallization layers 1402, 1404, 1406 may have a nano-scale pitch, and the redistribution layer 1702 may have a micro-scale pitch. Materials used to make the redistribution layer 1702 and the metallization layers 1402, 1404, 1406 may include metals (such as copper, silver, gold, tungsten, or other conductive materials) or other conductive materials (such as conductively doped with a semiconductor material as appropriate material).

Prior to forming the manufacturing process including the rear surface features of the redistribution layer 1702, a front-side processing wafer (not shown) having the general structure of the processing wafer 180 can be temporarily temporarily used by using an adhesion layer having the general structure of the adhesion layer 182. Attached to the front surface of the photon interposer 100 (the front surface of the photon interposer 100 with the functional interposer structure 120). Such a front-processed wafer allows the photonic interposer 100 to be positioned in a back-up direction for use in a fabrication process that includes a back-surface feature including a redistribution layer 1702. After forming the manufacturing process including the back surface features of the redistribution layer 1702, a back processing wafer 180, such as using an adhesion layer 182, can be temporarily attached to the photonic interposer 100, as shown in FIG. 3, and the front surface The processing wafer can be removed. As shown in FIG. 3, the back-processed wafer 180 allows the photonic interposer 100 to be positioned in a face-up direction to manufacture additional features such as the formation of features of the region 302, the formation of the recesses 402, 404, and prefabrication. Attachment of building blocks.

The channels 130, 134 may extend vertically. In one embodiment, the channel 130 may extend through the substrate and may also extend through the functional interposer structure 120. In one embodiment, the channel 130 may extend through the substrate 110 by fully extending through the substrate 110 and may extend through the functional interposer structure 120 through partially extending through the substrate 110. In one embodiment, the channel 134 may extend through the functional interposer structure 120 by partially extending through the functional interposer structure 120.

Referring to other aspects of FIG. 3, additional manufacturing processes may be performed at area 302 to accommodate the attachment of a prefabricated component. In an embodiment where the prefabricated component is a prefabricated semiconductor wafer with tin-lead bumps, the processing in the region 302 may include manufacturing an under bump metallization (UBM) structure.

Fig. 4 illustrates the photovoltaic system 10 from Fig. 3 in a subsequent intermediate stage of manufacturing. Referring to FIG. 4, a cavity 402 may be formed to accommodate a prefabricated component provided by a prefabricated laser die wafer 160A (FIG. 5), and a cavity 404 may be formed to accommodate a prefabricated photonic integrated circuit wafer 160B ( Figure 5) a prefabricated component. A structure 410 may be formed in the cavity 402 to facilitate the electrical and mechanical coupling of the wire 140 to a prefabricated component, and a structure 420 may be formed in the cavity 402 on the barrier layer 222 to facilitate the electrical and mechanical coupling of the wire 140. To a prefabricated component. The construction 420 may complete the manufacture of the alignment member 220 provided by the metal stack shown in the middle stage of manufacturing in FIG. 3. The structure 410 may be formed on a barrier layer 222, where the barrier layer 222 may be formed on a metallization layer. A structure 420 may be formed on the barrier layer 222. The barrier layer 222 may be formed in the metal pillar 221, wherein the metal pillar 221 may be formed on the metallization layer 1404. The barrier layers 212, 222 can be formed as a barrier to suppress the gold or tin contact metallization layer that may be caused by the corresponding prefabricated components, such as the prefabricated laser die wafer 160A or the prefabricated photonic integrated circuit wafer 160B. 1404 or reaction of metal column 221.

In one embodiment, the structure 410 and / or the structure 420 may be formed of a tin-lead bump. In one embodiment, the structure 410 and / or the structure 420 may be formed of a thin coherent metal coating (eg, an electroless formation or an electroplated formation) produced by electroless plating or electroplating. According to one embodiment, electroless plating may be provided by chemical or non-electric autocatalytic plating, which involves reactions in an aqueous solution that does not require an external power source. In one embodiment where electroless plating is performed, hydrogen can be released through a reducing agent to generate a negative charge on a surface. Electroless plating may include, for example, electroless nickel, electroless silver, electroless gold, or electroless copper. According to one embodiment of electroplating, an electric current can be used to reduce the dissolved metal cations so that they can form a thin metal coating on an electrode. In one embodiment, electroplating (eg, electroless plating or electroplating) can be used to precisely control the quantity and distribution of the material structure 410 and / or the material structure 420, thereby reducing re-welding due to the material structure 410 and / or the material structure 420 Changes in thickness.

In another aspect as shown in FIG. 4, the prefabricated semiconductor wafer 160C may be attached to the region 430. The prefabricated semiconductor wafer 160C may be a wafer having an active element or a passive element (complementary metal oxide semiconductor, radio frequency element, micro-electro-mechanical system, or discrete element). The process of the region 430 may include a process of soldering the bumps of the prefabricated semiconductor wafer 160C to the bump underlying metal structure. The prefabricated semiconductor wafer 160C may be a wafer having active and / or passive components (complementary metal oxide semiconductors, static random access memory, logic, special application integrated circuits, radio frequency components, micro-electro-mechanical systems, or discrete components). .

Fig. 5 illustrates the photovoltaic system 10 from Fig. 4 in a subsequent intermediate stage of manufacturing. Referring to FIG. 5, a prefabricated laser die wafer 160A may be attached to the functional interposer structure 120 in the cavity 402, and a prefabricated photonic integrated circuit wafer 160B may be attached to the functional interposer structure in the cavity 404. 120.

In order to attach the prefabricated laser die wafer 160A, the prefabricated laser die wafer 160A may be lowered downward until the bottom of the prefabricated laser die wafer 160A adjacent to the contact 160AC of the prefabricated laser die wafer 160A contacts. Aligning member 210. When the prefabricated laser die wafer 160A contacts the alignment member 210, the structure 410 can be locally laser heated by a laser heating tool to electrically and mechanically connect the prefabricated laser die wafer 160A to the functional interposer 120. Local laser heating can cause the structure 410 to be re-soldered, and can be established by electrical and mechanical coupling between the metallization layer 1404 and the contact 160AC of the prefabricated laser die wafer 160A. The prefabricated laser die wafer 160A can emit laser light of a predetermined wavelength or a variable wavelength. The prefabricated laser die wafer 160A can be combined with one or more laser light emission technologies, such as: distributed feedback laser, Fabry-Perot, and Wavelength Division Multiplexer (WDM).

In order to attach the preformed photonic integrated circuit wafer 160B to the functional interposer 120, the preformed photonic integrated circuit wafer 160B may be lowered downward until the contact 160BC of the preformed photonic integrated circuit wafer 160B comes into contact with the metal post 221, The alignment layer 220 provided by the metal stack of the barrier layer 222 and the structure 420. As shown, the attachment member used to attach the pre-made photonic integrated circuit wafer 160B to the recess 404 can be based on the controlled thickness of the alignment member 220 provided by the metal stack, so that vertical alignment can be based on contact with the structure 420 Contacts for the pre-made photonic integrated circuit wafer 160B are provided such that the pre-made photonic integrated circuit wafer 160B is located at a specific height that can be substantially maintained after the structure 420 is re-soldered. When the contact 160BC of the prefabricated photonic integrated circuit wafer 160B contacts the alignment member 220, the structure 420 can be locally heated by the laser by a laser heating tool. As the prefabricated photonic integrated circuit wafer 160B contacts the alignment member 220 provided by the metal stack, local laser heating can cause the structure 420 to be re-soldered, and can be established on the contact 160BC of the metallization layer 1404 and the preformed photonic integrated circuit wafer 160B. Electrical and mechanical coupling.

The prefabricated photonic integrated circuit wafer 160B may be a prefabricated photonic integrated circuit wafer for various applications, such as biomedicine, wavelength division multiplexing, data communications, analog radio frequency, mobile, optical fiber, and fiber optic networks. The pre-made photonic integrated circuit wafer 160B may include one or more photonic elements, such as a waveguide 150A and / or one or more photonic elements 150B-150G, one or more of a photonic region 240 manufactured with reference to FIGS. 7-10. Photonic elements such as waveguides, photodetectors, couplers, modulators, polarizers, splitters or resonators.

In order to attach the prefabricated laser die wafer 160A and the prefabricated photonic integrated circuit wafer 160B to the functional interposer structure 120, the prefabricated laser die wafer 160A and the prefabricated photonic integrated circuit wafer 160B may be manufactured by machine vision A wafer bonding tool is positioned in their respective pockets 402 and 404. The alignment members 210, 220 may provide vertical alignment (in a direction parallel to the z-axis of the reference coordinate system 15 shown throughout the pattern of the photonic interposer 100), so that the prefabricated laser die wafer 160A and the preformed photonic product The height of the circuit wafer can be accurately established. An identifiable pattern may be included in the photonic interposer 100 to facilitate the prefabricated laser die wafer 160A and the preformed photonic integrated circuit wafer 160B in a direction parallel to the axis parallel to the y-axis of the reference coordinate system 15 and along a parallel Align in the direction of the x-axis axis of the reference coordinate system 15. A pattern recognizable through machine vision pattern recognition can be conveniently manufactured through a pattern defined by the metallization layer 1402 and / or the metallization layer 1404.

Alignment members 210 that are operable to vertically align and establish the precise height of the prefabricated laser die wafer 160A can be separated and independent of the features used for the electrical connection of the prefabricated laser die wafer 160A and the functional interposer structure 120. Therefore, the requirements for positioning and providing conductive materials for electrical connection purposes can be expected to have a small impact on the vertical alignment of the prefabricated laser die wafer 160A. An attachment assembly for attaching a pre-made photonic integrated circuit wafer 160B to the recess 404 can be operated independently of the alignment member 210 and can be removed from the alignment member 210 of the design configuration.

Although the attachment components used to attach a prefabricated laser die wafer 160A to the cavity 402 and to attach a premade photonic integrated circuit wafer 160B to the cavity 404 are shown differently in the specific embodiment of FIG. 4 Attachment components, however, universal attachment components may be used instead. For example, an attachment assembly for attaching a prefabricated laser die wafer 160A to the cavity 402 may be used to attach the prefabricated laser die wafer 160A to the cavity 402 and to prefabricate a photonic integrated circuit wafer 160B Attach in the pocket 404. The attachment assembly shown in another embodiment to attach the pre-made photonic integrated circuit wafer 160B to the cavity 404 may be used to attach the pre-made laser die wafer 160A to the cavity 402 and attach the pre-made photon The integrated circuit wafer 160B is attached to the recess 404. The attachment assembly shown in an alternative embodiment for attaching a prefabricated laser die wafer 160A to the cavity 402 can be used to attach a prefabricated photonic integrated circuit wafer 160B to the cavity 404, and to An attachment assembly that attaches the pre-made photonic integrated circuit wafer 160B to the recess 404 may be used to attach the pre-made laser die wafer 160A to the recess 402.

As shown in FIG. 5, by attaching the prefabricated laser die wafer 160A to the functional interposer structure 120, the prefabricated laser die wafer 160A can be vertically aligned (in a direction parallel to the z-axis of the reference coordinate system 15 Top) The waveguide 150A is integrally formed in the functional interposer structure 120 so that a light emitting layer 160AL of the prefabricated laser die wafer 160A is vertically aligned with the waveguide 150A. The prefabricated laser die wafer 160A may be aligned with the z-axis, and the x-axis and y-axis are aligned with the waveguide 150A (in a direction parallel to the x-axis and y-axis of the reference coordinate system 15). In the case where the prefabricated laser die wafer 160A and the waveguide 150A are so aligned, the prefabricated laser die wafer 160A and the waveguide 150A may be edge-coupled to each other. According to one embodiment, the edge coupling between the prefabricated laser die wafer 160A and the waveguide 150A may include optical coupling with reduced insertion loss, resulting in enhanced system and signal integrity. The edge coupling may include a tapered light receiving waveguide 150A to further reduce light loss.

As shown in Figures 4-5, by attaching a pre-made photonic integrated circuit wafer 160B to the functional interposer structure 120, the pre-made photonic integrated circuit wafer 160B can be vertically aligned (on the z-axis parallel to the reference coordinate system 15 Direction) and x-axis and y-axis alignment (in a direction parallel to the x-axis and y-axis of the reference coordinate system 15) on the waveguide 150A integrally formed in the functional interposer structure 120, so that the pre-made photonic integrated circuit The waveguide 160BW of the wafer 160B is aligned with the waveguide 150A and correspondingly is at the same height as the waveguide 150A. With the pre-assembled photonic integrated circuit wafer 160B and the waveguide 150A so aligned, the pre-made photonic integrated circuit wafer 160B and the waveguide 150A may be edge-coupled to each other. According to one embodiment, the edge coupling between the pre-made photonic integrated circuit wafer 160B and the waveguide 150A may include optical coupling with reduced insertion loss, resulting in enhanced system and signal integrity. Edge coupling may include a tapered light receiving waveguide 160BW to further reduce light loss.

As shown in FIG. 5, the prefabricated laser die wafer 160A and the preformed photonic integrated circuit wafer 160B are attached to the functional interposer structure 120. The light emitting layer 160AL of the prefabricated laser die wafer 160A is integrally formed in the function. The waveguide 150A in the sexual interposer structure 120 and the waveguide 160BW of the pre-made photonic integrated circuit wafer 160B may be aligned along a common horizontal axis 502 and may be disposed at a common height. In one embodiment, the light emitting layer 160AL of the prefabricated laser die wafer 160A, the waveguide 150A and the waveguide 160BW integrally formed in the functional interposer structure 120 may each be provided by a linear structure having respective axes 504, 506, 508 Where the axes 504, 506, 508 extend parallel to the x-axis of the reference coordinate system 15. Aligning the light emitting layer 160AL of the prefabricated laser die wafer 160A, the waveguide 150A integrally formed in the functional interposer structure 120, and the waveguide 160BW of the prefabricated photonic integrated circuit wafer 160B as described can reduce light transmission loss, for example, Light transmission loss due to diffraction or reflection of internal components of the functional interposer structure 120.

In another aspect explained with reference to the manufacturing view of FIG. 5, the photonic interposer 100 may be configured such that the channel 130 provides a heat dissipation function to remove heat-generating components from the prefabricated laser die wafer 160A and the prefabricated photonic integrated circuit wafer 160B. The heat generated. In the case where the substrate 110 is formed of a thermally conductive material such as silicon, the photonic interposer 100 may be configured such that heat conducted through the channel 130 may be conducted through the substrate and the redistribution layer 1702 to remove heat from the photonic interposer 100. In the case where the substrate 110 is formed of a thermally insulating material such as silicon dioxide or glass, the photonic interposer 100 may be configured such that heat conducted through the channel 130 may be mainly conducted by the redistribution layer 1702 to remove heat from the photonic interposer 100. .

For further manufacturing processes, the bump underlying metal structure 176 as shown in FIG. 6 may be formed on the exposed area of the redistribution layer 1702 on the back side of the photonic interposer 100 (the exposed area is around the redistribution layer 1702 Location of the interposer material, as shown in the depression). Such a bump underlying metal construction 176 may be adapted to receive tin-lead bumps of a substructure to which the photonic interposer 100 may be attached. A processing wafer (not shown) may be temporarily attached to the functional interposer structure 120 via an adhesive to allow the optoelectronic system 10 to be processed and mounted in a sub-structure such as a printed circuit board or interposer.

FIG. 6 shows the optoelectronic system 10 with the tin-lead bump 192 passing through the photonic interposer 100 connected to the bump underlying metal structure 176 and mounted on the substructure 190. The printed circuit board substructure 190 shown may be replaced by, for example, a ball grid array or an interposer. The photonic interposer 100 in the manufacturing stage as shown in FIG. 6 may include a bonding wire 188 for wire bonding an electrode of the prefabricated laser die wafer 160A to the exposed voltage terminal of the functional interposer structure 120. Alternatively, the region of the configuration 410 of the functional interposer structure 120 may be configured to define positive and negative voltage terminals that are electrically insulated, and have a bottom electrode configured as separate positive and negative terminal electrodes as shown A prefabricated laser die wafer 160A may be attached to the positive electrode terminal and the negative electrode terminal in the region of the corresponding structure 410. External laser light may be coupled to the functional interposer structure 120. For example, a fiber optic cable 196 that transmits light from an external (outside interposer) source (not shown) may be coupled to the integrated waveguide 150H integrally formed in the functional interposer structure 120. The light receiving waveguide 150H may be tapered to reduce light loss. In order to electrically and mechanically connect the photonic interposer 100 to the substructure, the bump underlying metal structure 176 of the photonic interposer 100 may be soldered to the corresponding tin-lead bump 192 of the substructure 190 and sealed with a sealant 194.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. Unless the context clearly indicates otherwise, as used in this specification, the singular forms "a" and "the" are intended to include the plural forms as well. It should be further understood that the terms "including" (and any form of inclusion), "has" (and any form of having), "including" (and any form of including) and "containing" (and any form of containing) All are open-connected verbs. Thus, a method or a device "having", "including" or "containing" one or more steps or elements is provided with the one or more steps or elements, but is not limited to having only the one or more steps or elements . Similarly, a step of a method or an element of a device that "includes," "has," "includes," or "contains" one or more features is provided with the one or more features, but is not limited to having only the One or more characteristics. The form of the term "defined by" includes the relationship that elements are partially defined and elements are fully defined. Numeric identifiers in the text, such as "first" and "second" are arbitrary terms used to designate different components without specifying the order of the components. In addition, a system method or device configured in a certain manner is configured in at least that method, but may also be configured in a manner not listed. Furthermore, a system method or device illustrated as having a specific number of elements may be practiced with less or greater than that specific number of elements.

The corresponding structures, materials, behaviors, and equivalents (if any) of all devices or steps incorporating functional elements in the scope of the following patent applications are intended to include any structure, material, or behavior. The description of the present invention has been presented for purposes of illustration and description, but is not intended to be exhaustive or limited to the forms disclosed. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the invention. The embodiments were chosen and described in order to best explain the principles and practical applications of one or more aspects of the invention, and to enable others of ordinary skill in the art to understand the invention's purpose of Various Modifications of Use One or more aspects of various embodiments.

10‧‧‧ Photoelectric System

100‧‧‧ photon interposer

110‧‧‧ substrate

120‧‧‧functional interposer structure

122‧‧‧ Subject

130, 134‧‧‧ channels

140, 170‧‧‧ wires

1402, 1404, 1406‧‧‧ metallization

15‧‧‧ reference coordinate system

150, 150A, 150H, 160BW‧‧‧ waveguide

150B-150G‧‧‧Photonic Element

1502‧‧‧waveguide material layer

160‧‧‧ prefabricated components

160A‧‧‧Prefabricated Laser Chip Wafer

160AC, 160BC‧‧‧Contacts

160AL‧‧‧Light-emitting layer

160B‧‧‧Prefabricated Photonic Integrated Circuit Chip

160C‧‧‧Prefabricated semiconductor wafer

1702‧‧‧ redistribution layer

176‧‧‧ Bulk metal structure

180‧‧‧Processing wafer

182‧‧‧ Adhesive layer

188‧‧‧ welding wire

190‧‧‧Substructure

192‧‧‧tin lead bump

194‧‧‧sealant

196‧‧‧fiber optic cable

202, 204‧‧‧ height

210, 220‧‧‧ Alignment members

212, 222‧‧‧ barrier layer

221‧‧‧metal pillar

240‧‧‧photon region

302, 430‧‧‧ zones

402, 404‧‧‧

410, 420‧‧‧ Structure

502‧‧‧horizontal axis

504, 506, 508‧‧‧ axis

One or more aspects of the invention are specifically pointed out and distinctly claimed in the scope of the patent application at the end of the specification. The above and other objects, features, and advantages of the present invention will be apparent from the following detailed description in conjunction with the accompanying drawings, in which:

Figure 1 is a schematic cross-sectional view of a photovoltaic system having an interposer, one or more attached prefabricated components, and one or more integrated photonic elements;

Figure 2 is a schematic cross-sectional view of a photovoltaic system in the middle stage of manufacturing;

FIG. 3 is a schematic cross-sectional view of a photovoltaic system in an intermediate stage of manufacturing after manufacturing a redistribution layer; FIG.

FIG. 4 is a schematic cross-sectional view of a photovoltaic system in an intermediate stage of manufacturing after manufacturing to accommodate one or more prefabricated components;

FIG. 5 is a schematic cross-sectional view of a photovoltaic system in an intermediate stage of manufacturing after attaching one or more prefabricated components;

FIG. 6 is a schematic cross-sectional view of a photovoltaic system installed in a bottom structure; and

7-10 illustrate alternative embodiments of photonic elements that can be integrally formed in a functional interposer structure.

Claims (14)

An optoelectronic system includes: a photonic interposer having a substrate, a plurality of channels, and a plurality of wires, wherein a functional interposer structure is formed on the substrate, and the plurality of channels pass electrical signals through the substrate and the substrate. A functional interposer structure, the plurality of wires transmitting electrical signals to different regions of the functional interposer structure; one or more photonic elements integrally formed in the functional interposer structure; and one or more prefabricated A component attached to the functional interposer structure. For example, the photovoltaic system of item 1 of the patent application scope, wherein the one or more prefabricated components include one selected from the group consisting of a prefabricated laser die wafer, a prefabricated photonic integrated circuit wafer, and a prefabricated semiconductor wafer. member. For example, the photovoltaic system of claim 1, wherein the one or more prefabricated components include one prefabricated component selected from the group consisting of a prefabricated laser chip wafer and a prefabricated photonic integrated circuit wafer. For example, the photovoltaic system of the first patent application scope, wherein the interposer includes a metallization layer and a cavity, wherein the one or more prefabricated components include a prefabricated laser chip wafer, and is electrically connected to the metallization layer. And set in the cavity. For example, in the photovoltaic system of claim 1, wherein the interposer includes a metallization layer and a cavity, wherein the one or more prefabricated components include a prefabricated photonic integrated circuit chip, and is electrically connected to the metallization layer. And set in the cavity. For example, the photovoltaic system of claim 1, wherein the one or more photonic elements include a photonic element selected from the group consisting of a passive photonic element and an active photonic element. For example, the photovoltaic system of the first patent application scope, wherein the one or more photonic elements include a member selected from a waveguide, a light detector, a grating coupler, a modulator, a polarizer, and a resonator. One of the photonic elements in the group. For example, the photovoltaic system according to item 1 of the patent application, wherein the material of the functional interposer structure includes a material selected from the group consisting of silicon, silicon dioxide, and silicon nitride, and wherein the material of the substrate includes a material selected from Materials in a group of glass, sapphire, and silicon. For example, in the photovoltaic system of claim 1, the one or more photonic elements integrally formed in the functional interposer structure include an integrally formed elongated waveguide that extends horizontally in the functional interposer structure. For example, the photovoltaic system of claim 1 in which the one or more photonic elements integrally formed in the functional interposer structure includes an integrally formed elongated waveguide extending horizontally in the functional interposer structure, and wherein The one or more prefabricated components attached to the functional interposer structure include a prefabricated laser die wafer attached to a cavity in the functional interposer structure, wherein the prefabricated laser die wafer has a The horizontally extending light emitting layer is aligned with the entirety of the functional interposer structure extending horizontally to form an elongated waveguide. For example, the photovoltaic system of claim 1 in which the one or more photonic elements integrally formed in the functional interposer structure includes an integrally formed elongated waveguide extending horizontally in the functional interposer structure, and wherein The one or more prefabricated components attached to the functional interposer structure include a prefabricated photonic integrated circuit wafer attached to a recess in the functional interposer structure. The prefabricated photonic integrated circuit wafer has an elongated The horizontally extending waveguide is aligned with the horizontally extending whole in the functional interposer structure to form an elongated waveguide. For example, the photovoltaic system of claim 1 in which the one or more photonic elements integrally formed in the functional interposer structure includes an integrally formed elongated waveguide extending horizontally in the functional interposer structure, and wherein The one or more prefabricated components attached to the functional interposer structure include a prefabricated laser die wafer attached to a first cavity of the functional interposer structure, wherein the prefabricated laser die wafer Having a horizontally extending light emitting layer, aligned with the whole extending horizontally in the functional interposer structure to form an elongated waveguide, and wherein the one or more prefabricated components attached to the functional interposer structure include a preformed photonic product A circuit chip attached to a second cavity of the functional interposer structure. The pre-made photonic integrated circuit chip has an elongated horizontally extending waveguide aligned with the entirety of the functional interposer structure and extending horizontally to form an elongated waveguide. . For example, the photovoltaic system of claim 1 in which the one or more photonic elements integrally formed in the functional interposer structure includes an integrally formed elongated waveguide extending horizontally in the functional interposer structure, and wherein The one or more prefabricated components attached to the functional interposer structure include a prefabricated laser die wafer attached to a first cavity of the functional interposer structure, wherein the prefabricated laser die wafer Having a horizontally extending light emitting layer, aligned with the whole extending horizontally in the functional interposer structure to form an elongated waveguide, and wherein the one or more prefabricated components attached to the functional interposer structure include a preformed photonic product A circuit chip attached to a second cavity of the functional interposer structure. The pre-made photonic integrated circuit chip has an elongated horizontally extending waveguide aligned with the entirety of the functional interposer structure and extending horizontally to form an elongated waveguide. And the photonic interposer is mounted on a primary structure selected from a printed circuit board, a ball grid array package, and an insert Once structure in a group of things. For example, the photovoltaic system of claim 1 in which the one or more photonic elements integrally formed in the functional interposer structure includes an integrally formed elongated waveguide extending horizontally in the functional interposer structure, and wherein The one or more prefabricated components attached to the functional interposer structure include a prefabricated laser die wafer attached to a first cavity of the functional interposer structure, wherein the prefabricated laser die wafer Having a horizontally extending light emitting layer, aligned with the whole extending horizontally in the functional interposer structure to form an elongated waveguide, and wherein the one or more prefabricated components attached to the functional interposer structure include a preformed photonic product A circuit chip attached to a second cavity of the functional interposer structure. The pre-made photonic integrated circuit chip has an elongated horizontally extending waveguide aligned with the entirety of the functional interposer structure and extending horizontally to form an elongated waveguide. Wherein the one or more prefabricated components attached to the functional interposer structure include a prefabricated semiconductor wafer, and wherein the photon The interposer is mounted on a printed circuit board, and the prefabricated semiconductor wafer is a wafer selected from the group consisting of a complementary metal oxide semiconductor wafer, a radio frequency component wafer, a micro-electromechanical wafer, and a discrete component wafer. .