TW201642024A - Positive-type photosensitive resin composition for production of microlens pattern - Google Patents
Positive-type photosensitive resin composition for production of microlens pattern Download PDFInfo
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本發明係有關微透鏡圖型製造用正型感光性樹脂組成物及使用該組成物之微透鏡圖型之製造方法及微透鏡之製造方法。 The present invention relates to a positive photosensitive resin composition for producing a microlens pattern, a method for producing a microlens pattern using the composition, and a method for producing a microlens.
以往,相機、攝影機中採用固體攝影元件。此固體攝影元件使用CCD(charge-coupled device:電荷耦合元件)影像感測器、或CMOS(complementary metal-oxide semiconductor:互補式金屬-氧化物半導體)影像感測器。影像感測器中設置有以提高聚光率為目的之微細的聚光透鏡(以下稱為微透鏡)。 In the past, solid-state imaging elements were used in cameras and cameras. This solid-state imaging device uses a CCD (charge-coupled device) image sensor or a CMOS (complementary metal-oxide semiconductor) image sensor. A fine condenser lens (hereinafter referred to as a microlens) for increasing the concentration of light is provided in the image sensor.
微透鏡例如藉由使用正型感光性樹脂組成物之蝕刻法所形成。具體而言,在透鏡材料層上,使用正型感光性樹脂組成物形成正型感光性樹脂組成物層後,將此進行選擇性曝光。然後,藉由顯影除去曝光部分後,藉由熱處理使正型感光性樹脂組成物層流動化,形成具有微透鏡圖型之遮罩層。然後,乾蝕刻透鏡材料層及遮罩層,藉由將微透鏡圖型的形狀轉印至透鏡材料層而得到微透鏡。 以往,形成上述遮罩層使用之微透鏡圖型製造用正型感光性樹脂組成物,使用例如、丙烯酸系或酚醛系之正型阻劑材料(專利文獻1)。 The microlens is formed, for example, by an etching method using a positive photosensitive resin composition. Specifically, after forming a positive photosensitive resin composition layer on the lens material layer using a positive photosensitive resin composition, this is selectively exposed. Then, after the exposed portion is removed by development, the positive photosensitive resin composition layer is fluidized by heat treatment to form a mask layer having a microlens pattern. Then, the lens material layer and the mask layer are dry-etched, and the microlens is obtained by transferring the shape of the microlens pattern to the lens material layer. In the conventional positive photosensitive resin composition for producing a microlens pattern for use in the above-mentioned mask layer, for example, an acrylic or phenolic positive resist material is used (Patent Document 1).
[專利文獻1]日本特開2013-117662號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2013-117662
如上述之微透鏡圖型製造用正型感光性樹脂組成物,要求優異之解像性及寬廣之流動餘裕(可形成良好之微透鏡圖型的溫度範圍),但是以往的微透鏡圖型製造用正型感光性樹脂組成物,此等特性不足。 As described above, the positive photosensitive resin composition for producing a microlens pattern requires excellent resolution and a wide flow margin (a temperature range in which a good microlens pattern can be formed), but the conventional microlens pattern is manufactured. With a positive photosensitive resin composition, these characteristics are insufficient.
本發明係有鑑於以往實情而完成者,本發明之目的係提供具備優異之解像性及寬廣之流動餘裕之任一之微透鏡圖型製造用正型感光性樹脂組成物及使用該組成物之微透鏡圖型之製造方法及微透鏡之製造方法。 The present invention has been made in view of the facts of the present invention, and an object of the present invention is to provide a positive-type photosensitive resin composition for manufacturing a microlens pattern having excellent resolution and a wide flow margin, and to use the composition. A method of manufacturing a microlens pattern and a method of manufacturing a microlens.
本發明人等藉由組合具有酸解離性溶解抑制基,藉由酸的作用對鹼之溶解性增加之特定的樹脂與具有至少2個乙烯氧基之化合物,發現可解決上述課題,遂完成本發明。具體而言,本發明係提供以下者。 The present inventors have found that a specific resin having an acid dissociable dissolution inhibiting group and a solubility of an alkali by an action of an acid and a compound having at least two ethyleneoxy groups can be used to solve the above problems. invention. Specifically, the present invention provides the following.
本發明之第一態樣係一種正型感光性樹脂組成物,其係含有:具有酸解離性溶解抑制基,藉由酸之作用,對鹼之溶解性增加的樹脂(A)、具有至少2個乙烯氧基的化合物(B)及光酸產生劑(C)之微透鏡圖型製造用正型感光性樹脂組成物,其中前述樹脂(A)含有具有由羥基苯乙烯衍生之構成單位(a1)及由羥基苯乙烯衍生之構成單位中之至少1個羥基的氫原子被含有酸解離性溶解抑制基之基取代的構成單位(a2)的樹脂(A1)。 The first aspect of the present invention is a positive photosensitive resin composition comprising: a resin (A) having an acid dissociable dissolution inhibiting group and having an increased solubility to an alkali by an action of an acid, having at least 2 A positive photosensitive resin composition for producing a fluorinated compound (B) and a photoacid generator (C), wherein the resin (A) contains a constituent unit derived from hydroxystyrene (a1) And a resin (A1) constituting the unit (a2) in which a hydrogen atom of at least one hydroxyl group in a constituent unit derived from hydroxystyrene is substituted with a group containing an acid dissociable dissolution inhibiting group.
本發明之第二態樣係一種微透鏡圖型之製造方法,其係包含以下步驟:使用上述正型感光性樹脂組成物,形成正型感光性樹脂組成物層之正型感光性樹脂組成物層形成步驟,將上述正型感光性樹脂組成物層選擇性曝光的曝光步驟,將曝光後之上述正型感光性樹脂組成物層進行顯影的顯影步驟,及將顯影後之前述正型感光性樹脂組成物層進行加熱的加熱步驟。 A second aspect of the present invention is a method for producing a microlens pattern comprising the step of forming a positive photosensitive resin composition of a positive photosensitive resin composition layer using the positive photosensitive resin composition described above. a layer forming step of exposing the positive photosensitive resin composition layer to an exposure step, a developing step of developing the exposed positive photosensitive resin composition layer after exposure, and the positive photosensitive property after development The heating step of heating the resin composition layer.
本發明之第三態樣係一種微透鏡之製造方法,其係包含以下步驟:使用上述正型感光性樹脂組成物,將正型感光性樹脂組成物層層合於透鏡材料層上之正型感光性樹脂組成物層層合步驟,將上述正型感光性樹脂組成物層選擇性曝光的曝光步驟,將曝光後之上述正型感光性樹脂組成物層進行顯影的顯影步驟,將顯影後之上述正型感光性樹脂組成物層進行加熱,形成具有微透鏡圖型之遮罩層的遮罩層形成步驟及乾蝕刻上述透鏡材料層及上述遮罩層,將上述微透鏡圖型的形狀轉印至上述透鏡材料 層之形狀轉印步驟。 A third aspect of the present invention provides a method for producing a microlens, comprising the step of: laminating a positive photosensitive resin composition layer on a lens material layer using the positive photosensitive resin composition; a photosensitive resin composition layer laminating step, an exposure step of selectively exposing the positive photosensitive resin composition layer, and a developing step of developing the exposed positive photosensitive resin composition layer after exposure, and developing the image The positive photosensitive resin composition layer is heated to form a mask layer forming step having a mask layer of a microlens pattern, and dry etching the lens material layer and the mask layer to convert the shape of the microlens pattern Printed to the above lens material The shape transfer step of the layer.
依據本發明時,可提供具備優異之解像性及寬廣之流動餘裕之任一的微透鏡圖型製造用正型感光性樹脂組成物及使用該組成物之微透鏡圖型之製造方法及微透鏡之製造方法。 According to the present invention, it is possible to provide a positive photosensitive resin composition for producing a microlens pattern having excellent resolution and a wide flow margin, and a method for producing a microlens pattern using the composition and micro The method of manufacturing the lens.
本發明之微透鏡圖型製造用正型感光性樹脂組成物含有:具有酸解離性溶解抑制基,藉由酸之作用,對鹼之溶解性增加的樹脂(A)、具有至少2個乙烯氧基的化合物(B)及光酸產生劑(C),其中上述樹脂(A)含有具有由羥基苯乙烯衍生之構成單位(a1)及由羥基苯乙烯衍生之構成單位中之至少1個羥基的氫原子被含有酸解離性溶解抑制基之基取代的構成單位(a2)的樹脂(A1)。此正型感光性樹脂組成物係藉由蝕刻法製造微透鏡時,適用於形成具有微透鏡圖型之遮罩層。以下詳細說明上述正型感光性樹脂組成物所含有之各成分。 The positive photosensitive resin composition for producing a microlens pattern of the present invention contains a resin (A) having an acid dissociable dissolution inhibiting group and having an increased solubility to an alkali by an action of an acid, and having at least 2 ethylene oxides. a compound (B) and a photoacid generator (C), wherein the resin (A) contains at least one hydroxyl group having a constituent unit derived from hydroxystyrene (a1) and a constituent unit derived from hydroxystyrene The resin (A1) constituting the unit (a2) in which a hydrogen atom is substituted with a group containing an acid dissociable dissolution inhibiting group. When the positive photosensitive resin composition is manufactured by an etching method, it is suitable for forming a mask layer having a microlens pattern. Hereinafter, each component contained in the above-mentioned positive photosensitive resin composition will be described in detail.
具有酸解離性溶解抑制基,藉由酸之作用,對鹼之溶解性增加的樹脂(A)係含有具有由羥基苯乙烯衍生之構成單位(a1)及由羥基苯乙烯衍生之構成單位中之至少1個羥基的氫原子被含有酸解離性溶解抑制基之基取代的構成單位(a2)的樹脂(A1)。樹脂(A)可單獨使用或組合2種以上使用。 The resin (A) having an acid dissociable dissolution inhibiting group and having an increased solubility in alkali by an action of an acid contains a constituent unit derived from hydroxystyrene (a1) and a constituent unit derived from hydroxystyrene A resin (A1) constituting the unit (a2) in which at least one hydrogen atom of a hydroxyl group is substituted with a group containing an acid dissociable dissolution inhibiting group. The resin (A) may be used singly or in combination of two or more.
樹脂(A)藉由含有具有構成單位(a1)與構成單位(a2)之樹脂(A1),所得之正型感光性樹脂組成物容易成為解像性優異者,且容易確保寬廣之流動餘裕。 When the resin (A) contains the resin (A1) having the constituent unit (a1) and the constituent unit (a2), the positive photosensitive resin composition obtained is excellent in resolution, and it is easy to ensure a wide flow margin.
構成單位(a1)可列舉例如以下述一般式(a1-1)表示之構成單位。又,構成單位(a2)可列舉例如以下述一般式(a2-1)表示之構成單位。 The constituent unit (a1) is, for example, a constituent unit represented by the following general formula (a1-1). In addition, the constituent unit (a2) may be, for example, a constituent unit represented by the following general formula (a2-1).
一般式(a1-1)中,Ra1及Ra3表示氫原子、烷基、鹵素原子、或被鹵素原子取代之烷基。Ra1及Ra3之烷基為碳數1~5之烷基,較佳為直鏈或分枝狀之烷基,可列舉例如甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等。工業上較佳為甲基。鹵素原子可列舉例如氟原子、氯原子、溴原子、碘原子等,特佳為氟原子。被鹵素原子取代之烷基係上述碳數1~5之烷基之一部份或全部之氫原子被鹵素原子取代者。本發明中,氫原子全部被鹵素化者較佳。被鹵素原子取代之烷基,較佳為被鹵素原子取代之直鏈或分枝狀之烷基,特佳為三氟甲基、五氟乙基、七氟丙基、九氟丁基等之氟化烷基,最佳為三氟甲基(-CF3)。Ra1及Ra3較佳為氫原子或甲基,更佳為氫原子。 In the general formula (a1-1), R a1 and R a3 represent a hydrogen atom, an alkyl group, a halogen atom or an alkyl group substituted by a halogen atom. The alkyl group of R a1 and R a3 is an alkyl group having 1 to 5 carbon atoms, preferably a linear or branched alkyl group, and examples thereof include a methyl group, an ethyl group, a propyl group, an isopropyl group, and an n-butyl group. Base, isobutyl, tert-butyl, pentyl, isopentyl, neopentyl, and the like. Industrially preferred is methyl. The halogen atom may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, and particularly preferably a fluorine atom. The alkyl group substituted by a halogen atom is a part or all of a hydrogen atom of one or more of the alkyl groups having 1 to 5 carbon atoms, which is substituted by a halogen atom. In the present invention, it is preferred that all of the hydrogen atoms are halogenated. The alkyl group substituted by a halogen atom is preferably a linear or branched alkyl group substituted by a halogen atom, particularly preferably a trifluoromethyl group, a pentafluoroethyl group, a heptafluoropropyl group, a nonafluorobutyl group or the like. The fluorinated alkyl group is preferably a trifluoromethyl group (-CF 3 ). R a1 and R a3 are preferably a hydrogen atom or a methyl group, more preferably a hydrogen atom.
Ra2及Ra5之碳數1~5之烷基,可列舉與Ra1及Ra3之烷基同樣者。q、s、及t獨立為0~4之整數。此等之中,q、s、及t較佳為0或1,在工業上特佳為0。Ra2之取代位置係當q為1的情形,可為o-位、m-位、p-位之任一,q為2~4之整數的情形,可組合任意之取代位置。Ra5之取代位置係當t為1的情形,可為o-位、m-位、p-位之任一,t為1~4之整數的情形,可組合任意之取代位置。p及r表示1~5之整數,較佳為1~3之整數,較佳為1。羥基之取代位置係p及s為1的情形,可為o-位、m-位、p-位之任一,但是可容易取得,且低價格,較佳為p-位。此外,p為2~5之整數的情形及s為2~4之整數的情 形,可組合任意之取代位置。 The alkyl group having 1 to 5 carbon atoms of R a2 and R a5 may be the same as the alkyl group of R a1 and R a3 . q, s, and t are independently integers from 0 to 4. Among these, q, s, and t are preferably 0 or 1, and industrially preferably 0. The substitution position of R a2 is a case where q is 1, and may be any of the o-position, the m-position, and the p-position, and q is an integer of 2 to 4, and any substitution position may be combined. The substitution position of R a5 is a case where t is 1, and may be any of the o-position, the m-position, and the p-position, and t is an integer of 1 to 4, and any substitution position may be combined. p and r represent an integer of 1 to 5, preferably an integer of 1 to 3, preferably 1. When the substitution position of the hydroxyl group is p and s is 1, it may be any of the o-position, the m-position, and the p-position, but it is easily available and has a low price, preferably a p-position. Further, in the case where p is an integer of 2 to 5 and s is an integer of 2 to 4, any substitution position may be combined.
上述以Ra4表示之酸解離性溶解抑制基,可列舉例如以下述式(a2-1-1)表示之基、以下述式(a2-1-2)表示之基、碳數1~6之直鏈狀、分枝狀、或環狀之烷基、乙烯氧基乙基、四氫吡喃基、四呋喃基、或三烷基甲矽烷基。 The acid dissociable dissolution inhibiting group represented by R a4 , for example, a group represented by the following formula (a2-1-1), a group represented by the following formula (a2-1-2), and a carbon number of 1 to 6 A linear, branched, or cyclic alkyl group, a vinyloxyethyl group, a tetrahydropyranyl group, a tetrafuranyl group, or a trialkylcarbenyl group.
上述式(a2-1-1)及(a2-1-2)中,Ra6及Ra7獨立表示氫原子或烷基,Ra8及Ra10獨立表示烷基或環烷基,Ra9表示單鍵或伸烷基,但是Ra6、Ra7、及Ra8之至少2種互相鍵結可形成環。 In the above formulae (a2-1-1) and (a2-1-2), R a6 and R a7 independently represent a hydrogen atom or an alkyl group, and R a8 and R a10 independently represent an alkyl group or a cycloalkyl group, and R a9 represents a single A bond or an alkyl group, but at least two of R a6 , R a7 , and R a8 are bonded to each other to form a ring.
Ra6或Ra7表示之烷基可列舉例如碳數1~6之直鏈狀或分枝狀之烷基。Ra8表示之烷基,可列舉例如碳數1~10之直鏈狀或分枝狀之烷基,Ra8表示之環烷基,可列舉例如碳數3~10之環烷基。Ra9表示之伸烷基,可列舉例如碳數1~3之伸烷基。Ra10表示之烷基,可列舉例如碳數1~6之直鏈狀或分枝狀之烷基,Ra10表示之環烷基,可列舉例如碳數3~6之環烷基。 The alkyl group represented by R a6 or R a7 may, for example, be a linear or branched alkyl group having 1 to 6 carbon atoms. The alkyl group represented by R a8 may, for example, be a linear or branched alkyl group having 1 to 10 carbon atoms, and a cycloalkyl group represented by R a8 may, for example, be a cycloalkyl group having 3 to 10 carbon atoms. The alkylene group represented by R a9 may, for example, be an alkylene group having 1 to 3 carbon atoms. Examples of the alkyl group represented by R a10 include a linear or branched alkyl group having 1 to 6 carbon atoms, and a cycloalkyl group represented by R a 10 , and examples thereof include a cycloalkyl group having 3 to 6 carbon atoms.
上述直鏈狀或分枝狀之烷基,可列舉例如甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、 戊基、異戊基、新戊基。又,上述環烷基,可列舉例如環戊基、環己基等。上述伸烷基,可列舉例如亞甲基、伸乙基、甲基亞甲基、伸丙基、異伸丙基、及乙基亞甲基。 Examples of the linear or branched alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, and a tert-butyl group. Pentyl, isopentyl, neopentyl. Further, examples of the cycloalkyl group include a cyclopentyl group and a cyclohexyl group. The above alkylene group may, for example, be a methylene group, an ethylidene group, a methylmethylene group, a propyl group, an exopropyl group or an ethylmethylene group.
在此,以上述式(a2-1-1)表示之酸解離性溶解抑制基,具體而言,可列舉例如甲氧基乙基、乙氧基乙基、n-丙氧基乙基、異丙氧基乙基、n-丁氧基乙基、異丁氧基乙基、tert-丁氧基乙基、環己氧基乙基、甲氧基丙基、乙氧基丙基、1-甲氧基-1-甲基-乙基、1-乙氧基-1-甲基乙基等。又,以上述式(a2-1-2)表示之酸解離性溶解抑制基,具體而言,可列舉例如tert-丁氧基羰基、tert-丁氧基羰基甲基等。又,上述三烷基甲矽烷基可列舉例如三甲基甲矽烷基、三-tert-丁基二甲基甲矽烷基等之各烷基之碳數1~6者。 Here, the acid dissociable dissolution inhibiting group represented by the above formula (a2-1-1), specifically, for example, methoxyethyl, ethoxyethyl, n-propoxyethyl or the like Propoxyethyl, n-butoxyethyl, isobutoxyethyl, tert-butoxyethyl, cyclohexyloxyethyl, methoxypropyl, ethoxypropyl, 1- Methoxy-1-methyl-ethyl, 1-ethoxy-1-methylethyl and the like. In addition, the acid dissociable dissolution inhibiting group represented by the above formula (a2-1-2) may, for example, be a tert-butoxycarbonyl group or a tert-butoxycarbonylmethyl group. Further, examples of the trialkylcarbenyl group include those having 1 to 6 carbon atoms of each alkyl group such as trimethylmethanealkyl or tri-tert-butyldimethylformamidin.
構成單位(a1)及(a2)各自可使用1種或混合2種以上使用。 Each of the constituent units (a1) and (a2) may be used alone or in combination of two or more.
樹脂(A1)中,構成單位(a1)及(a2)之合計之比例係相對於構成樹脂(A1)之全構成單位,較佳為10~100莫耳%,更佳為30~100莫耳%,又更佳為50~100莫耳%,特佳為70~100莫耳%,最佳為100莫耳%。上述比例在上述範圍內時,所得之正型感光性樹脂組成物容易成為解像性更優異者,又,容易確保更寬廣之流動餘裕,此外,與其他之構成單位的平衡良好。 In the resin (A1), the total ratio of the constituent units (a1) and (a2) is preferably 10 to 100 mol%, more preferably 30 to 100 mol%, based on the total constituent unit of the constituent resin (A1). %, more preferably 50~100% by mole, especially preferably 70~100% by mole, and most preferably 100% by mole. When the ratio is within the above range, the positive photosensitive resin composition obtained tends to be more excellent in resolution, and it is easy to secure a wider flow margin, and the balance with other constituent units is good.
構成單位(a1)及(a2)之合計中,構成單位(a2)之比例(亦即,羥基苯乙烯之保護率)較佳為10~60莫耳 %,更佳為20~40莫耳%。羥基苯乙烯之保護率為上述範圍內時,所得之正型感光性樹脂組成物容易成為解像性更優異者,又,容易確保更寬廣之流動餘裕。 In the total of the constituent units (a1) and (a2), the ratio of the constituent unit (a2) (that is, the protection ratio of hydroxystyrene) is preferably 10 to 60 m. %, more preferably 20 to 40% by mole. When the protective ratio of the hydroxystyrene is within the above range, the obtained positive photosensitive resin composition is more likely to be excellent in resolution, and it is easy to secure a wider flow margin.
樹脂(A1)除構成單位(a1)及(a2)外。也可含有構成單位(a1)及(a2)以外之其他的構成單位。其他的構成單位,具體而言,可列舉例如下述構成單位(a3)及(a4)等。 The resin (A1) is in addition to the constituent units (a1) and (a2). It may also contain other constituent units other than the constituent units (a1) and (a2). Specific examples of the other constituent units include the following constituent units (a3) and (a4).
構成單位(a3)係由苯乙烯衍生之構成單位。藉由含有構成單位(a3),調整其含量,有時可調整樹脂(A1)對鹼顯影液之溶解性的情形,藉此,有時可控制厚膜阻劑膜之鹼溶解性的情形,也可更提高形狀的情形。 The constituent unit (a3) is a constituent unit derived from styrene. By including the constituent unit (a3) and adjusting the content thereof, the solubility of the resin (A1) in the alkali developing solution may be adjusted, whereby the alkali solubility of the thick film resist film may be controlled. It is also possible to increase the shape of the situation.
在此,「苯乙烯」係指狭義之苯乙烯及狭義之苯乙烯之α位的氫原子被取代成鹵素原子、烷基、鹵素化烷基等之其他的取代基者,及含有彼等之衍生物的概念。「由苯乙烯衍生之構成單位」係指苯乙烯之乙烯性雙鍵開裂構成之構成單位。苯乙烯之苯基之氫原子也可被低級烷基(例如碳數1~5之烷基)等之取代基所取代。 Here, "styrene" means a substituent in which a hydrogen atom at the α position of styrene and a narrow styrene is substituted with a halogen atom, an alkyl group, a halogenated alkyl group or the like, and contains the other substituents. The concept of derivatives. The "constituting unit derived from styrene" means a constituent unit composed of ethylene double bond cracking of styrene. The hydrogen atom of the phenyl group of styrene may also be substituted with a substituent such as a lower alkyl group (for example, an alkyl group having 1 to 5 carbon atoms).
構成單位(a3)例如有以下述一般式(a3-1)表示之構成單位。 The constituent unit (a3) has, for example, a constituent unit represented by the following general formula (a3-1).
式中,R表示氫原子、烷基、鹵素原子、或被鹵素原子取代之烷基,R7表示碳數1~5之烷基,r表示0~3之整數。 In the formula, R represents a hydrogen atom, an alkyl group, a halogen atom or an alkyl group substituted by a halogen atom, R 7 represents an alkyl group having 1 to 5 carbon atoms, and r represents an integer of 0 to 3.
R可列舉例如與上述Ra1及Ra3所例示者同樣之基。R7可列舉例如與上述Ra2及Ra5所例示者同樣之基。 R may be, for example, the same as those exemplified above for R a1 and R a3 . R 7 may, for example, be the same as those exemplified above for R a2 and R a5 .
r為0~3之整數。此等之中,r較佳為0或1,在工業上特佳為0。 r is an integer from 0 to 3. Among these, r is preferably 0 or 1, and industrially preferably 0.
R7之取代位置當r為1的情形,可為o-位、m-位、p-位之任一,r為2或3的情形,可組合任意之取代位置。 The substitution position of R 7 may be any of the o-position, the m-position, and the p-position, and r may be 2 or 3 in the case where r is 1, and any substitution position may be combined.
構成單位(a3)可單獨使用1種,或可組合2種以上使用。 The constituent unit (a3) may be used alone or in combination of two or more.
樹脂(A1)中,構成單位(a3)之比例係相對於構成樹脂(A1)之全構成單位,較佳為0~90莫耳%,更佳為0~70莫耳%,又更佳為0~50莫耳%,特佳為0~30莫耳%,最佳為0莫耳%。上述比例為上述範圍內時,與其他之構成單位之平衡容易變得良好。上述比例之下限係相對於構成樹 脂(A1)之全構成單位,較佳為1莫耳%,更佳為3莫耳%,特佳為5莫耳%。上述下限為上述之值時,具有構成單位(a3)所得之效果容易提高。 In the resin (A1), the ratio of the constituent unit (a3) is preferably from 0 to 90 mol%, more preferably from 0 to 70 mol%, more preferably from 0 to 90 mol%, more preferably from the total constituent unit of the constituent resin (A1). 0~50% by mole, especially preferably 0~30% by mole, and most preferably 0% by mole. When the above ratio is within the above range, the balance with other constituent units tends to be good. The lower limit of the above ratio is relative to the constituent tree The total constituent unit of the fat (A1) is preferably 1 mol%, more preferably 3 mol%, and particularly preferably 5 mol%. When the lower limit is the above value, the effect obtained by having the constituent unit (a3) is likely to be improved.
構成單位(a4)係由具有醇性羥基之丙烯酸酯所衍生之構成單位。藉由具有此構成單位(a4),有進一步提高本發明效果的情形。 The constituent unit (a4) is a constituent unit derived from an acrylate having an alcoholic hydroxyl group. By having such a constituent unit (a4), there is a case where the effect of the present invention is further improved.
較佳之構成單位(a4),可列舉例如含有具有醇性羥基之鏈狀或環狀烷基的構成單位。亦即,構成單位(a4)較佳為由具有含有醇性羥基之鏈狀或環狀烷基之丙烯酸酯所衍生之構成單位。 The constituent unit (a4) is preferably a constituent unit containing a chain or cyclic alkyl group having an alcoholic hydroxyl group. That is, the constituent unit (a4) is preferably a constituent unit derived from an acrylate having a chain or cyclic alkyl group having an alcoholic hydroxyl group.
構成單位(a4)具有由具有含有醇性羥基之環狀烷基之丙烯酸酯所衍生之構成單位(以下有時僅稱為「具有含羥基之環狀烷基之構成單位」)時,有解像性提高的情形,同時也有提高蝕刻耐性的情形。 When the constituent unit (a4) has a constituent unit derived from an acrylate having a cyclic alkyl group having an alcoholic hydroxyl group (hereinafter sometimes referred to simply as "a constituent unit having a cyclic alkyl group having a hydroxyl group"), In the case where the image is improved, there is also a case where the etching resistance is improved.
又,構成單位(a4)具有由具有含有醇性羥基之鏈狀烷基之丙烯酸酯所衍生之構成單位(以下有時僅稱為「具有含羥基之鏈狀烷基之構成單位」)時,因(A)成分全體之親水性有提高的情形,與顯影液之親和性有提高的情形,故解像性有提高的情形。 In addition, when the constituent unit (a4) has a constituent unit derived from an acrylate having a chain alkyl group having an alcoholic hydroxyl group (hereinafter sometimes referred to simply as "a constituent unit having a hydroxyl group-containing chain alkyl group"), When the hydrophilicity of the entire component (A) is improved, the affinity with the developer is improved, so that the resolution is improved.
具有含羥基之環狀烷基之構成單位,可列舉例如丙烯 酸酯之酯基[-C(O)O-]上鍵結有含羥基之環狀烷基之構成單位等。其中,「含羥基之環狀烷基」係指環狀烷基上鍵結有羥基之基。 A constituent unit having a cyclic alkyl group having a hydroxyl group, and examples thereof include propylene. A constituent unit of a cyclic alkyl group having a hydroxyl group bonded to an ester group [-C(O)O-] of the acid ester. Here, the "hydroxyl-containing cyclic alkyl group" means a group having a hydroxyl group bonded to a cyclic alkyl group.
羥基例如鍵結1~3個為佳,鍵結1個更佳。 Preferably, the hydroxyl group is, for example, 1 to 3 bonds, and the bonding is preferably one.
環狀烷基可為單環也可為多環,但是較佳為多環式基。又,環狀烷基之碳數較佳為5~15。 The cyclic alkyl group may be a single ring or a polycyclic ring, but is preferably a polycyclic group. Further, the number of carbon atoms of the cyclic alkyl group is preferably from 5 to 15.
環狀烷基之具體例,可列舉以下者。 Specific examples of the cyclic alkyl group include the following.
單環式之環狀烷基,可列舉由環鏈烷中去除1個~4個氫原子所得之基等。更具體而言,單環式之環狀烷基,可列舉例如環戊烷、環己烷等之環鏈烷中去除1個~4個氫原子所得之基,此等之中,較佳為環己基。 The monocyclic cyclic alkyl group may, for example, be a group obtained by removing one to four hydrogen atoms from a cycloalkane. More specifically, the monocyclic cyclic alkyl group may, for example, be a group obtained by removing one to four hydrogen atoms from a cycloalkane such as cyclopentane or cyclohexane. Among these, it is preferably Cyclohexyl.
多環式之環狀烷基,可列舉例如雙環鏈烷、三環鏈烷、四環鏈烷等之多環鏈烷中去除1個~4個氫原子而得之基等。更具體而言,可列舉例如金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等之多環鏈烷中去除1個~4個氫原子而得之基等。 The polycyclic cyclic alkyl group may, for example, be a group obtained by removing one to four hydrogen atoms from a polycyclic alkane such as a bicycloalkane, a tricycloalkane or a tetracycloalkane. More specifically, for example, a group obtained by removing one to four hydrogen atoms from a polycyclic alkane such as adamantane, norbornane, isodecane, tricyclodecane or tetracyclododecane may be mentioned.
又,這種環狀烷基例如在ArF準分子雷射製程用之光阻組成物用樹脂中,被多數提案作為構成酸解離性溶解抑制基者中適宜選擇使用。此等之中,環己基、金剛烷基、降莰基、及四環十二烷基在工業上容易取得,故較佳。 Further, such a cyclic alkyl group is suitably used, for example, as a resin for forming a photoresist composition for an ArF excimer laser process, which is proposed as an acid dissociation dissolution inhibiting group. Among these, cyclohexyl, adamantyl, norbornyl, and tetracyclododecyl are preferable because they are industrially easy to obtain.
此等例示之單環式基及多環式基之中,較佳為環己基及金剛烷基,特佳為金剛烷基。 Among the above-exemplified monocyclic and polycyclic groups, a cyclohexyl group and an adamantyl group are preferred, and an adamantyl group is particularly preferred.
具有含羥基之環狀烷基之構成單位之具體例,例如以下述一般式(a4-1)表示之構成單位(a4-1)為佳。 Specific examples of the constituent unit having a cyclic alkyl group having a hydroxyl group are preferably, for example, a constituent unit (a4-1) represented by the following general formula (a4-1).
式中,R表示氫原子、烷基、鹵素原子、或被鹵素原子取代之烷基,s為1~3之整數。 In the formula, R represents a hydrogen atom, an alkyl group, a halogen atom, or an alkyl group substituted by a halogen atom, and s is an integer of 1 to 3.
R可列舉例如與上述Ra1及Ra3所例示者同樣之基。 R may be, for example, the same as those exemplified above for R a1 and R a3 .
s為1~3之整數,最佳為1。 s is an integer from 1 to 3, and most preferably 1.
羥基之鍵結位置無特別限定,羥基鍵結於金剛烷基之3位之位置者為佳。 The bonding position of the hydroxyl group is not particularly limited, and it is preferred that the hydroxyl group is bonded to the position of the adamantyl group at the 3-position.
具有含羥基之鏈狀烷基之構成單位,可列舉例如丙烯酸酯之酯基[-C(O)O-]上鍵結有鏈狀之羥基烷基之構成單位等。在此,「鏈狀之羥基烷基」係指鏈狀(直鏈或分枝狀)之烷基中氫原子之一部分或全部被羥基取代所成之基。 The constituent unit of the chain-like alkyl group having a hydroxyl group may, for example, be a constituent unit in which a chain hydroxyalkyl group is bonded to an ester group of acrylate [-C(O)O-]. Here, the "chain hydroxyalkyl group" means a group in which a part or all of a hydrogen atom in a chain (linear or branched) alkyl group is substituted with a hydroxyl group.
具有含羥基之鏈狀烷基之構成單位,特別是以下述一般式(a4-2)表示之構成單位(a4-2)為佳。 The constituent unit having a hydroxyl group-containing chain alkyl group is particularly preferably a constituent unit (a4-2) represented by the following general formula (a4-2).
式中,R係與上述同樣,R8為鏈狀之羥基烷基。] In the formula, R is the same as above, and R 8 is a chain hydroxyalkyl group. ]
R可列舉與上述Ra1及Ra3所例示者同樣之基。 R may be the same as those exemplified above for R a1 and R a3 .
R8之羥基烷基,較佳為碳數1~10之羥基烷基,更佳為碳數2~8之羥基烷基,又更佳為碳數2~4之直鏈狀之羥基烷基。 a hydroxyalkyl group of R 8 , preferably a hydroxyalkyl group having 1 to 10 carbon atoms, more preferably a hydroxyalkyl group having 2 to 8 carbon atoms, more preferably a linear hydroxyalkyl group having 2 to 4 carbon atoms; .
羥基烷基中之羥基之數及鍵結位置無特別限定,通常羥基之數為1個,又,鍵結位置較佳為烷基之末端。 The number of the hydroxyl groups in the hydroxyalkyl group and the bonding position are not particularly limited, and usually the number of the hydroxyl groups is one, and the bonding position is preferably the terminal of the alkyl group.
構成單位(a4)可使用1種或混合2種以上使用。 The constituent unit (a4) may be used alone or in combination of two or more.
樹脂(A1)中,構成單位(a4)之比例係相對於構成樹脂(A1)之全構成單位,較佳為0~90莫耳%,更佳為0~70莫耳%,又更佳為0~50莫耳%,特佳為0~30莫耳%,最佳 為0莫耳%。上述比例為上述範圍內時,與其他之構成單位之平衡容易變得良好。上述比例之下限係相對於構成樹脂(A1)之全構成單位,較佳為1莫耳%,更佳為3莫耳%,特佳為5莫耳%。上述下限為上述之值時,藉由具有構成單位(a4)所得之效果容易提高。 In the resin (A1), the ratio of the constituent unit (a4) is preferably from 0 to 90 mol%, more preferably from 0 to 70 mol%, more preferably from 0 to 90 mol%, more preferably from the total constituent unit of the constituent resin (A1). 0~50% by mole, especially good for 0~30% by mole, best It is 0% by mole. When the above ratio is within the above range, the balance with other constituent units tends to be good. The lower limit of the above ratio is preferably 1 mol%, more preferably 3 mol%, and particularly preferably 5 mol%, based on the total constituent unit of the constituent resin (A1). When the lower limit is the above value, the effect obtained by having the constituent unit (a4) is easily improved.
樹脂(A1)在不損及本發明效果的範圍內,也可含有上述構成單位(a1)~(a4)以外之其他之構成單位(a5)。 The resin (A1) may contain other constituent units (a5) other than the above-described constituent units (a1) to (a4) within a range not impairing the effects of the present invention.
構成單位(a5)只要是不被分類為上述構成單位(a1)~(a4)之其他之構成單位時,則無特別限定,也可使用被用於ArF準分子雷射用、KrF正型準分子雷射用(較佳為KrF準分子雷射用)等之阻劑用樹脂為以往所知之多數者。 The constituent unit (a5) is not particularly limited as long as it is not classified into the other constituent units (a1) to (a4), and may be used for ArF excimer laser or KrF positive type. Resins for molecular lasers (preferably for KrF excimer lasers) and the like are conventionally known.
樹脂(A1)可為單獨1種也可併用2種以上。 The resin (A1) may be used alone or in combination of two or more.
(A)成分中,樹脂(A1)之比例,為了本發明效果時,較佳為50~100質量%,更佳為80~100質量%,最佳為100質量%。 In the component (A), the ratio of the resin (A1) is preferably from 50 to 100% by mass, more preferably from 80 to 100% by mass, most preferably 100% by mass, in order to obtain the effect of the present invention.
樹脂(A1)包含具有以下述式(a1-1)表示之構成單位與以下述式(a2-1)表示之構成單位的樹脂(A2)為佳。 The resin (A1) preferably contains a resin (A2) having a constituent unit represented by the following formula (a1-1) and a constituent unit represented by the following formula (a2-1).
因樹脂(A1)包含樹脂(A2),所得之正型感光性樹脂組成物容易成為解像性更優異者,又,容易確保更寬廣之流動餘裕。 Since the resin (A1) contains the resin (A2), the obtained positive photosensitive resin composition is more likely to be excellent in resolution, and it is easy to secure a wider flow margin.
樹脂(A2)可為單獨1種也可併用2種以上。 The resin (A2) may be used alone or in combination of two or more.
樹脂(A1)中,樹脂(A2)之比例,為了本發明效果時,較佳為50~100質量%,更佳為80~100質量%,最佳為100質量%。 In the resin (A1), the ratio of the resin (A2) is preferably from 50 to 100% by mass, more preferably from 80 to 100% by mass, most preferably 100% by mass, in order to obtain the effect of the present invention.
樹脂(A2)包含具有以上述式(a1-1)表示之構成單位及以下述式(a2-2)表示之構成單位及/或以下述式(a2-3)表示之構成單位的樹脂(A3)為佳。 The resin (A2) contains a resin having a constituent unit represented by the above formula (a1-1) and a constituent unit represented by the following formula (a2-2) and/or a constituent unit represented by the following formula (a2-3) (A3) ) is better.
因樹脂(A2)包含樹脂(A3),所得之正型感光性樹脂組成物容易成為解像性更優異者,又,容易確保更寬廣之流動餘裕。 When the resin (A2) contains the resin (A3), the obtained positive photosensitive resin composition is more likely to be excellent in resolution, and it is easy to secure a wider flow margin.
樹脂(A3)可為單獨1種也可併用2種以上。 The resin (A3) may be used alone or in combination of two or more.
樹脂(A2)中,樹脂(A3)之比例,為了本發明效果時,較佳為50~100質量%,更佳為80~100質量%,最佳為100質量%。 In the resin (A2), the ratio of the resin (A3) is preferably from 50 to 100% by mass, more preferably from 80 to 100% by mass, most preferably 100% by mass, in order to obtain the effect of the present invention.
樹脂(A3)包含以上述式(a1-1)表示之構成單位、以上述式(a2-2)表示之構成單位之樹脂(A4)及/或以上述式(a1-1)表示之構成單位及以上述式(a2-3)表示之構成單位的樹脂(A5)為佳。 The resin (A3) includes a constituent unit represented by the above formula (a1-1), a resin (A4) represented by the above formula (a2-2), and/or a constituent unit represented by the above formula (a1-1). The resin (A5) which is a constituent unit represented by the above formula (a2-3) is preferred.
因樹脂(A3)包含樹脂(A4)及/或樹脂(A5),所得之正型感光性樹脂組成物容易成為解像性更優異者,又,容易確保更寬廣之流動餘裕。 When the resin (A3) contains the resin (A4) and/or the resin (A5), the positive photosensitive resin composition obtained tends to be more excellent in resolution, and it is easy to ensure a wider flow margin.
特別是樹脂(A3)包含樹脂(A4)及樹脂(A5)之兩者的情形,可同時兼具高的解像性與寬廣之流動餘裕,故較佳。 In particular, in the case where the resin (A3) contains both the resin (A4) and the resin (A5), it is preferable because it has both high resolution and a wide flow margin.
樹脂(A4)及樹脂(A5)之各自可為單獨1種也可併用2種以上。 Each of the resin (A4) and the resin (A5) may be used alone or in combination of two or more.
樹脂(A3)中,樹脂(A4)及(A5)之合計之比例,為了本發明效果時,較佳為50~100質量%,更佳為80~100質量%,最佳為100質量%。 In the resin (A3), the ratio of the total of the resins (A4) and (A5) is preferably from 50 to 100% by mass, more preferably from 80 to 100% by mass, most preferably 100% by mass, in order to obtain the effect of the present invention.
樹脂(A4)之量係相對於樹脂(A4)與樹脂(A5)之合計,較佳為60~90莫耳%,更佳為70~80莫耳%。樹脂(A4)之量為上述範圍內時,所得之正型感光性樹脂組成物 容易成為解像性更優異者,又,特別是容易確保更寬廣之流動餘裕。 The amount of the resin (A4) is preferably 60 to 90 mol%, more preferably 70 to 80 mol%, based on the total of the resin (A4) and the resin (A5). When the amount of the resin (A4) is within the above range, the obtained positive photosensitive resin composition It is easy to become more excellent in resolving, and in particular, it is easy to ensure a wider flow margin.
樹脂(A1)之質量平均分子量(Mw),較佳為5000~30000。關於樹脂(A2)及(A3)之質量平均分子量也同樣。上述質量平均分子量為上述範圍內時,所得之正型感光性樹脂組成物之解像性、耐熱性、及流動性容易變成良好者。又,本說明書中,質量平均分子量係指藉由凝膠滲透層析(GPC)所得之以聚苯乙烯換算者。 The mass average molecular weight (Mw) of the resin (A1) is preferably from 5,000 to 30,000. The same applies to the mass average molecular weight of the resins (A2) and (A3). When the mass average molecular weight is within the above range, the resolution, heat resistance, and fluidity of the obtained positive photosensitive resin composition tend to be good. In the present specification, the mass average molecular weight means a polystyrene equivalent obtained by gel permeation chromatography (GPC).
樹脂(A4)之質量平均分子量,較佳為15000~30000,更佳為17000~25000。上述質量平均分子量為15000以上時,所得之正型感光性樹脂組成物容易提高耐熱性,又,流動性不會過高,故容易確保寬廣之流動餘裕。此外,上述質量平均分子量為30000以下時,所得之正型感光性樹脂組成物容易成為解像性優異者。 The mass average molecular weight of the resin (A4) is preferably from 15,000 to 30,000, more preferably from 17,000 to 25,000. When the mass average molecular weight is 15,000 or more, the positive photosensitive resin composition obtained tends to improve heat resistance, and the fluidity is not excessively high, so that it is easy to secure a wide flow margin. In addition, when the mass average molecular weight is 30,000 or less, the obtained positive photosensitive resin composition is likely to be excellent in resolution.
樹脂(A5)之質量平均分子量,較佳為5000~15000,更佳為7000~10000。上述質量平均分子量為上述範圍內時,所得之正型感光性樹脂組成物容易成為耐熱性及流動性良好者。 The mass average molecular weight of the resin (A5) is preferably from 5,000 to 15,000, more preferably from 7,000 to 10,000. When the mass average molecular weight is within the above range, the obtained positive photosensitive resin composition is likely to be excellent in heat resistance and fluidity.
本發明中,作為(A)成分,在不損及本發明效果之範圍內,除樹脂(A1)外,也可含有PHS系樹脂、丙烯酸系樹脂等之一般作為化學增寬型正型阻劑用樹脂使用的樹脂。 In the present invention, as the component (A), in addition to the resin (A1), a PHS-based resin or an acrylic resin may be contained as a chemically broadened positive resist as a component of the component (A). A resin used with a resin.
樹脂(A)之質量平均分子量(Mw),較佳為5000~30000。上述質量平均分子量為上述範圍內時,所得 之正型感光性樹脂組成物容易成為解像性、耐熱性、及流動性良好者。 The mass average molecular weight (Mw) of the resin (A) is preferably from 5,000 to 30,000. When the mass average molecular weight is within the above range, the obtained The positive photosensitive resin composition is likely to be excellent in resolution, heat resistance, and fluidity.
本發明之正型感光性樹脂組成物中,(A)成分之含量可配合欲形成之阻劑膜厚來調整即可。 In the positive photosensitive resin composition of the present invention, the content of the component (A) may be adjusted in accordance with the thickness of the resist film to be formed.
具有至少2個乙烯氧基之化合物(B)只要是具有2個以上之乙烯氧基(CH2=CH-O-)之氧原子與碳原子鍵結之乙烯基醚基的化合物時,則無特別限定。藉由含有此化合物,所得之正型感光性樹脂組成物容易成為解像性更優異者,又,容易確保寬廣之流動餘裕。(B)成分可單獨使用或組合2種以上使用。 The compound (B) having at least two ethyleneoxy groups is not particularly limited as long as it is a compound having two or more vinyl ether groups in which an oxygen atom of a vinyloxy group (CH 2 =CH-O-) is bonded to a carbon atom. Specially limited. By containing such a compound, the positive-type photosensitive resin composition obtained is more excellent in resolution, and it is easy to ensure a wide flow margin. The component (B) may be used singly or in combination of two or more.
具有至少2個乙烯氧基之化合物(B)推測藉由對於(A)成分,作為交聯劑作用,而發揮上述效果。亦即,具有至少2個乙烯氧基之化合物(B)係因預烤時之加熱,與(A)成分進行交聯反應,於基板全面形成鹼不溶化阻劑層。然後,推測曝光時,因由(B)成分產生之酸的作用,該交聯被分解,曝光部變成鹼可溶性,未曝光部未變化為鹼不溶,故提高溶解對比。又,推測後烤時,進一步與樹脂(A)進行交聯,而提高流動餘裕。 The compound (B) having at least two ethyleneoxy groups is presumed to exert the above effects by acting as a crosslinking agent for the component (A). That is, the compound (B) having at least two ethyleneoxy groups is subjected to a crosslinking reaction with the component (A) by heating during prebaking, and an alkali-insoluble resist layer is formed on the entire substrate. Then, at the time of exposure, it is presumed that the cross-linking is decomposed by the action of the acid generated by the component (B), the exposed portion becomes alkali-soluble, and the unexposed portion is not changed to alkali-insoluble, so that the dissolution contrast is improved. Further, it is presumed that the post-baking is further cross-linked with the resin (A) to increase the flow margin.
具有至少2個乙烯氧基之化合物(B),具體而言,多數列舉於日本特開平6-148889號公報、日本特開平6-230574號公報等,可由此等之中任意選擇使用。特別是考慮起因於熱交聯性與酸所致之分解性的阻劑圖型形 狀、及曝光部與未曝光部之對比的特性時,藉由將以下述一般式(f-2)表示之醇之羥基之一部份或全部之氫原子以乙烯基取代,進行醚化的化合物較佳。 The compound (B) having at least two ethylene-oxy groups, and the like, are arbitrarily selected from the group consisting of JP-A-6-148889, JP-A-6-230574, and the like. In particular, consider the shape of the resisting agent due to thermal crosslinkability and acid decomposition. In the case of the characteristics of the contrast between the exposed portion and the unexposed portion, the partial or total hydrogen atom of one or more of the hydroxyl groups of the alcohol represented by the following general formula (f-2) is substituted with a vinyl group to carry out etherification. The compound is preferred.
Rb-(OH)b (f-2) Rb-(OH) b (f-2)
式中,Rb為由直鏈狀、分枝狀、或環狀之鏈烷中去除個氫原子所得之基,可具有取代基。又,鏈烷中可含有氧鍵結(醚鍵)。b表示2、3、或4。 In the formula, Rb is a group obtained by removing a hydrogen atom from a linear, branched or cyclic alkane, and may have a substituent. Further, the alkane may contain an oxygen bond (ether bond). b means 2, 3, or 4.
具體而言,可列舉例如乙二醇二乙烯基醚、三乙二醇二乙烯基醚、1,3-丁二醇二乙烯基醚、四亞甲基乙二醇二乙烯基醚、新戊二醇二乙烯基醚、三羥甲基丙烷三乙烯基醚、三羥甲基乙烷三乙烯基醚、己二醇二乙烯基醚、1,4-環己二醇二乙烯基醚、四乙二醇二乙烯基醚、季戊四醇二乙烯基醚、季戊四醇三乙烯基醚、環己烷二甲醇二乙烯基醚等。 Specific examples thereof include ethylene glycol divinyl ether, triethylene glycol divinyl ether, 1,3-butylene glycol divinyl ether, tetramethylene glycol divinyl ether, and neopentyl Diol divinyl ether, trimethylolpropane trivinyl ether, trimethylolethane trivinyl ether, hexanediol divinyl ether, 1,4-cyclohexanediol divinyl ether, four Ethylene glycol divinyl ether, pentaerythritol divinyl ether, pentaerythritol trivinyl ether, cyclohexane dimethanol divinyl ether, and the like.
具有至少2個乙烯氧基之化合物(B),較佳為以下述一般式(f-3)表示者。 The compound (B) having at least two ethyleneoxy groups is preferably represented by the following general formula (f-3).
CH2=CH-O-R27-O-CH=CH2 (f-3) CH 2 =CH-OR 27 -O-CH=CH 2 (f-3)
式(f-3)中,R27為碳數1~10之分枝狀或直鏈狀之伸烷基或以下述一般式(f-4)表示之基。R27可具有取代基。又,R27之主鏈可含有氧鍵結(醚鍵)。 In the formula (f-3), R 27 is a branched or linear alkyl group having 1 to 10 carbon atoms or a group represented by the following general formula (f-4). R 27 may have a substituent. Further, the main chain of R 27 may contain an oxygen bond (ether bond).
一般式(f-4)中,R28各自獨立為可具有取代基之碳數1~10之分枝狀或直鏈狀之伸烷基,該伸烷基可在主鏈上含有氧鍵結(醚鍵)。c各自獨立為0或1。 In the general formula (f-4), R 28 is each independently a branched or linear alkyl group having 1 to 10 carbon atoms which may have a substituent, and the alkylene group may have an oxygen bond in the main chain. (ether bond). c is independently 0 or 1.
R27較佳為-C4H8-、-C2H4OC2H4-、-C2H4OC2H4OC2H4-、以一般式(f-4)所示之基等,其中較佳為以一般式(f-4)所示之基,特別是R28為碳數1之伸烷基(亦即,亞甲基),c為1之以一般式(f-4)所示之基為佳。 R 27 is preferably -C 4 H 8 -, -C 2 H 4 OC 2 H 4 -, -C 2 H 4 OC 2 H 4 OC 2 H 4 -, a group represented by the general formula (f-4) And wherein, preferably, it is a group represented by the general formula (f-4), particularly, R 28 is a C 1 alkyl group (that is, a methylene group), and c is 1 by a general formula (f- 4) The base shown is preferred.
以一般式(f-3)表示之化合物,較佳為環己二醇二乙烯基醚[以下簡稱為CHDVE〕。 The compound represented by the general formula (f-3) is preferably cyclohexanediol divinyl ether [hereinafter abbreviated as CHDVE].
本發明之正型感光性樹脂組成物中,(B)成分之含量,從容易提高所得之正型感光性樹脂組成物之解像性及流動餘裕的觀點,相對於(A)成分100質量份,較佳為0.1~15質量份,更佳為1~8質量份。 In the positive photosensitive resin composition of the present invention, the content of the component (B) is 100 parts by mass relative to the component (A) from the viewpoint of easily improving the resolution and flow margin of the positive photosensitive resin composition obtained. It is preferably 0.1 to 15 parts by mass, more preferably 1 to 8 parts by mass.
本發明所用之光酸產生劑(C)只要是藉由活性光線或輻射線照射而產生酸的化合物時,則無特別限定。(C)成分可單獨或組合2種以上使用。 The photoacid generator (C) used in the present invention is not particularly limited as long as it is a compound which generates an acid by irradiation with active light or radiation. The component (C) may be used alone or in combination of two or more.
(C)成分係以下說明之第一~第五態樣之光酸產生劑較佳。以下,針對(C)成分中較適合者,以第一至第 五態樣來說明。 The component (C) is preferably a photoacid generator of the first to fifth aspects described below. Hereinafter, for the more suitable ones of the components (C), the first to the first Five aspects to illustrate.
(C)成分中之第一態樣,可列舉以下述式(c1)表示之化合物。 The first aspect of the component (C) includes a compound represented by the following formula (c1).
上述式(c1)中,X1c表示原子價g之硫原子或碘原子,g為1或2。h表示括弧內之構造的重複單位數。R1c為與X1c鍵結之有機基,表示碳數6~30之芳基、碳數4~30之雜環基、碳數1~30之烷基、碳數2~30之烯基、或碳數2~30之炔基,R1c亦可被選自由烷基、羥基、烷氧基、烷基羰基、芳基羰基、烷氧基羰基、芳氧基羰基、芳硫基羰基、醯氧基、芳硫基、烷硫基、芳基、雜環、芳氧基、烷基亞磺醯基、芳基亞磺醯基、烷基磺醯基、芳基磺醯基、伸烷氧基、胺基、氰基、硝基之各基、及鹵素所成群組之至少1種取代。R1c之個數為g+h(g-1)+1,R1c可各自彼此相同亦可相異。又,2個以上之R1c亦可互相直接、或經由-O-、-S-、-SO-、-SO2-、-NH-、-NR2c-、-CO-、-COO-、-CONH-、碳數1~3之伸烷基、或伸苯基而鍵結,也可形成包含X1c之環構造。R2c係碳數1~5之烷基或碳數6~10之芳基。 In the above formula (c1), X 1c represents a sulfur atom or an iodine atom of the valence g, and g is 1 or 2. h represents the number of repeating units of the structure in parentheses. R 1c is an organic group bonded to X 1c , and represents an aryl group having 6 to 30 carbon atoms, a heterocyclic group having 4 to 30 carbon atoms, an alkyl group having 1 to 30 carbon atoms, and an alkenyl group having 2 to 30 carbon atoms. Or an alkynyl group having 2 to 30 carbon atoms, and R 1c may also be selected from an alkyl group, a hydroxyl group, an alkoxy group, an alkylcarbonyl group, an arylcarbonyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an arylthiocarbonyl group, or an anthracene group. Oxyl, arylthio, alkylthio, aryl, heterocyclic, aryloxy, alkylsulfinyl, arylsulfinyl, alkylsulfonyl, arylsulfonyl, alkoxy At least one of a group of a group, an amine group, a cyano group, a nitro group, and a halogen group. The number of R 1c is g+h(g-1)+1, and R 1c may be the same or different from each other. Further, two or more R 1c may be directly or mutually via -O-, -S-, -SO-, -SO 2 -, -NH-, -NR 2c -, -CO-, -COO-, - CONH-, an alkylene group having a carbon number of 1 to 3, or a phenyl group to bond, may also form a ring structure containing X 1c . R 2c is an alkyl group having 1 to 5 carbon atoms or an aryl group having 6 to 10 carbon atoms.
X2c係以下述式(c2)表示之構造。 X 2c is a structure represented by the following formula (c2).
上述式(c2)中,X4c表示碳數1~8之伸烷基、碳數6~20之伸芳基、或碳數8~20之雜環化合物之2價基,X4c亦可被選自由碳數1~8之烷基、碳數1~8之烷氧基、碳數6~10之芳基、羥基、氰基、硝基之各基、及鹵素所成群組之至少1種所取代。X5c表示-O-、-S-、-SO-、-SO2-、-NH-、-NR2c-、-CO-、-COO-、-CONH-、碳數1~3之伸烷基、或伸苯基。h表示括弧內之構造的重複單位數。h+1個之X4c及h個之X5c可各自相同亦可相異。R2c係與前述之定義相同。 In the above formula (c2), X 4c represents an alkylene group having 1 to 8 carbon atoms, an extended aryl group having 6 to 20 carbon atoms, or a divalent group having a heterocyclic compound having 8 to 20 carbon atoms, and X 4c may also be Selecting an alkyl group having 1 to 8 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an aryl group having 6 to 10 carbon atoms, a hydroxyl group, a cyano group, a group of a nitro group, and at least 1 group of a halogen group Replaced by species. X 5c represents -O-, -S-, -SO-, -SO 2 -, -NH-, -NR 2c -, -CO-, -COO-, -CONH-, alkylene having 1 to 3 carbon atoms Or stretch phenyl. h represents the number of repeating units of the structure in parentheses. The h+1 X 4c and the h X 5c may be the same or different. R 2c is the same as defined above.
X3c-為鎓類之對離子,可列舉下述式(c17)表示之氟化烷基氟磷酸陰離子或下述式(c18)表示之硼酸鹽陰離子。 X 3c- is a counter ion of a hydrazine, and a fluorinated alkyl fluorophosphate anion represented by the following formula (c17) or a borate anion represented by the following formula (c18) is mentioned.
上述式(c17)中,R3c表示氫原子之80莫耳%以上被氟原子取代之烷基。j表示其個數,為1~5之整數。j個之R3c可各自相同亦可相異。 In the above formula (c17), R 3c represents an alkyl group in which 80 mol% or more of a hydrogen atom is substituted by a fluorine atom. j indicates the number, which is an integer from 1 to 5. The j R 3c may be the same or different.
上述式(c18)中,R4c~R7c各自獨立表示氟原子或苯基,該苯基之氫原子之一部分或全部,亦可被選自由氟原子及三氟甲基所成群組之至少1種取代。 In the above formula (c18), R 4c to R 7c each independently represent a fluorine atom or a phenyl group, and part or all of a hydrogen atom of the phenyl group may be selected from at least a group consisting of a fluorine atom and a trifluoromethyl group. 1 substitution.
上述式(c1)表示之化合物中之鎓離子,可列舉三苯基鋶、三-p-甲苯基鋶、4-(苯硫基)苯基二苯基鋶、雙[4-(二苯基鋶基)苯基]硫醚、雙〔4-{雙[4-(2-羥基乙氧基)苯基]鋶基}苯基〕硫醚、雙{4-[雙(4-氟苯基)鋶基]苯基}硫醚、4-(4-苯甲醯基-2-氯苯硫基)苯基雙(4-氟苯基)鋶、7-異丙基-9-側氧-10-硫雜-9,10-二氫蒽-2-基二-p-甲苯基鋶、7-異丙基-9-側氧-10-硫雜-9,10-二氫蒽-2-基二苯基鋶、2-[(二苯基)鋶基]噻噸酮、4-[4-(4-tert-丁基苯甲醯基)苯硫基]苯基二-p-甲苯基鋶、4-(4-苯甲醯基苯硫基)苯基二苯基鋶、二苯基苯甲醯甲基鋶、4-羥基苯基甲基苄基鋶、2-萘基甲基(1-乙氧基羰基)乙基鋶、4-羥基苯基甲基苯甲醯甲基鋶、苯基[4-(4-聯苯硫基)苯基]4-聯苯基鋶、苯基[4-(4-聯苯硫基)苯基]3-聯苯基鋶、[4-(4-乙醯苯硫基)苯基]二苯基鋶、十八基甲基苯甲醯甲基鋶、二苯基錪、二-p-甲苯基錪、雙(4-十二基苯基)錪、雙(4-甲氧基苯基)錪、(4-辛氧基苯基)苯基錪、雙(4-癸氧基)苯基錪、4-(2-羥基十四烷氧基)苯基苯基錪、4-異丙基苯基(p-甲苯基)錪、或4-異丁 基苯基(p-甲苯基)錪等。 Examples of the phosphonium ion in the compound represented by the above formula (c1) include triphenylsulfonium, tris-p-methylphenylphosphonium, 4-(phenylthio)phenyldiphenylphosphonium, and bis[4-(diphenyl). Mercapto)phenyl]thioether, bis[4-{bis[4-(2-hydroxyethoxy)phenyl]indolyl}phenyl] sulfide, double {4-[bis(4-fluorophenyl)鋶]phenyl]thioether, 4-(4-benzylidene-2-chlorophenylthio)phenylbis(4-fluorophenyl)anthracene, 7-isopropyl-9-sideoxy- 10-thia-9,10-dihydroinden-2-yldi-p-tolylhydrazine, 7-isopropyl-9-oxooxy-10-thia-9,10-dihydroindole-2- Diphenyl hydrazine, 2-[(diphenyl)indenyl]thioxanthone, 4-[4-(4-tert-butylbenzylidene)phenylthio]phenyldi-p-tolyl Bismuth, 4-(4-benzylidenephenylthio)phenyldiphenylphosphonium, diphenylbenzylidenemethylhydrazine, 4-hydroxyphenylmethylbenzylhydrazine, 2-naphthylmethyl ( 1-ethoxycarbonyl)ethyl hydrazine, 4-hydroxyphenylmethylbenzhydrylmethylhydrazine, phenyl[4-(4-biphenylthio)phenyl]4-biphenyl fluorene, phenyl [4-(4-Biphenylthio)phenyl]3-biphenyl fluorene, [4-(4-ethylphenylthio)phenyl]diphenyl fluorene, octadecylmethyl benzoyl Base, diphenylanthracene, di-p-tolylhydrazine, double (4-ten Phenyl, bis(4-methoxyphenyl)fluorene, (4-octyloxyphenyl)phenylhydrazine, bis(4-decyloxy)phenylhydrazine, 4-(2-hydroxyl-10- Tetraalkoxy)phenylphenylhydrazine, 4-isopropylphenyl(p-methylphenyl)anthracene, or 4-isobutyl Phenylphenyl (p-tolyl) oxime or the like.
上述式(c1)表示之化合物中之鎓離子中,較佳之鎓離子可列舉下述式(c19)表示之鋶離子。 Among the cerium ions in the compound represented by the above formula (c1), preferred cerium ions include cerium ions represented by the following formula (c19).
上述式(c19)中,R8c各自獨立地表示選自由氫原子、烷基、羥基、烷氧基、烷基羰基、烷基羰氧基、烷氧基羰基、鹵素原子、可具有取代基之芳基、芳基羰基所成群組之基。X2c係表示與上述式(c1)中之X2c相同意義。 In the above formula (c19), R 8c each independently represents a group selected from a hydrogen atom, an alkyl group, a hydroxyl group, an alkoxy group, an alkylcarbonyl group, an alkylcarbonyloxy group, an alkoxycarbonyl group, a halogen atom, and a substituent. A group in which an aryl group or an arylcarbonyl group is grouped. X 2c represents the same meaning as X 2c in the above formula (c1).
上述式(c19)表示之鋶離子之具體例,可列舉4-(苯硫基)苯基二苯基鋶、4-(4-苯甲醯基-2-氯苯硫基)苯基雙(4-氟苯基)鋶、4-(4-苯甲醯基苯硫基)苯基二苯基鋶、苯基[4-(4-聯苯硫基)苯基]4-聯苯基鋶、苯基[4-(4-聯苯硫基)苯基]3-聯苯基鋶、[4-(4-乙醯苯硫基)苯基]二苯基鋶、二苯基[4-(p-聯三苯硫基)苯基]二苯基鋶。 Specific examples of the ruthenium ion represented by the above formula (c19) include 4-(phenylthio)phenyldiphenylphosphonium and 4-(4-benzylidene-2-chlorophenylthio)phenyl bis ( 4-fluorophenyl)anthracene, 4-(4-benzylidenephenylthio)phenyldiphenylanthracene, phenyl[4-(4-biphenylthio)phenyl]4-biphenylhydrazine Phenyl [4-(4-biphenylthio)phenyl]3-biphenyl fluorene, [4-(4-ethylsulfonylphenyl)phenyl]diphenyl fluorene, diphenyl [4- (p-bitriphenylthio)phenyl]diphenylphosphonium.
上述式(c17)表示之氟化烷基氟磷酸陰離子中,R3c表示被氟原子取代之烷基,較佳之碳數為1~8、更佳之碳數為1~4。烷基之具體例,可列舉甲基、乙基、丙基、丁基、戊基、辛基等之直鏈烷基;異丙基、異丁 基、sec-丁基、tert-丁基等之分支烷基;及環丙基、環丁基、環戊基、環己基等之環烷基等,烷基之氫原子被氟原子取代之比例,通常為80莫耳%以上、較佳為90莫耳%以上、又更佳為100莫耳%。氟原子之取代率未達80莫耳%的情形,上述式(c1)表示之鎓類氟化烷基氟磷酸鹽之酸強度會降低。 In the fluorinated alkyl fluorophosphate anion represented by the above formula (c17), R 3c represents an alkyl group substituted by a fluorine atom, preferably a carbon number of 1 to 8, more preferably a carbon number of 1 to 4. Specific examples of the alkyl group include linear alkyl groups such as methyl, ethyl, propyl, butyl, pentyl and octyl; isopropyl, isobutyl, sec-butyl, tert-butyl, etc. a branched alkyl group; and a cycloalkyl group such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group or a cyclohexyl group; and the ratio of the hydrogen atom of the alkyl group to the fluorine atom is usually 80 mol% or more, preferably 90% or more, and more preferably 100% by mole. In the case where the substitution ratio of the fluorine atom is less than 80 mol%, the acid strength of the fluorinated alkyl fluoride fluorophosphate represented by the above formula (c1) is lowered.
特佳之R3c,係碳數1~4、且氟原子之取代率為100莫耳%之直鏈狀或分支狀之全氟烷基,具體例子可列舉CF3、CF3CF2、(CF3)2CF、CF3CF2CF2、CF3CF2CF2CF2、(CF3)2CFCF2、CF3CF2(CF3)CF、(CF3)3C。R3c之個數j,係1~5之整數、較佳為2~4、特佳為2或3。 Particularly preferred R 3c is a linear or branched perfluoroalkyl group having a carbon number of 1 to 4 and a fluorine atom substitution ratio of 100 mol %, and specific examples thereof include CF 3 , CF 3 CF 2 , (CF). 3 ) 2 CF, CF 3 CF 2 CF 2 , CF 3 CF 2 CF 2 CF 2 , (CF 3 ) 2 CFCF 2 , CF 3 CF 2 (CF 3 ) CF, (CF 3 ) 3 C. The number j of R 3c is an integer of 1 to 5, preferably 2 to 4, and particularly preferably 2 or 3.
較佳之氟化烷基氟磷酸陰離子之具體例,可列舉[(CF3CF2)2PF4]-、[(CF3CF2)3PF3]-、[((CF3)2CF)2PF4]-、[((CF3)2CF)3PF3]-、[(CF3CF2CF2)2PF4]-、[(CF3CF2CF2)3PF3]-、[((CF3)2CFCF2)2PF4]-、[((CF3)2CFCF2)3PF3]-、[(CF3CF2CF2CF2)2PF4]-、或[(CF3CF2CF2)3PF3]-,此等之中,特佳為[(CF3CF2)3PF3]-、[(CF3CF2CF2)3PF3]-、[((CF3)2CF)3PF3]-、[((CF3)2CF)2PF4]-、[((CF3)2CFCF2)3PF3]-、或[((CF3)2CFCF2)2PF4]-。 Specific examples of the preferred fluorinated alkylfluorophosphate anion include [(CF 3 CF 2 ) 2 PF 4 ] - , [(CF 3 CF 2 ) 3 PF 3 ] - , [((CF 3 ) 2 CF) 2 PF 4 ] - , [((CF 3 ) 2 CF) 3 PF 3 ] - , [(CF 3 CF 2 CF 2 ) 2 PF 4 ] - , [(CF 3 CF 2 CF 2 ) 3 PF 3 ] - , [((CF 3 ) 2 CFCF 2 ) 2 PF 4 ] - , [((CF 3 ) 2 CFCF 2 ) 3 PF 3 ] - , [(CF 3 CF 2 CF 2 CF 2 ) 2 PF 4 ] - , Or [(CF 3 CF 2 CF 2 ) 3 PF 3 ] - , among these, particularly preferably [(CF 3 CF 2 ) 3 PF 3 ] - , [(CF 3 CF 2 CF 2 ) 3 PF 3 ] - , [((CF 3 ) 2 CF) 3 PF 3 ] - , [((CF 3 ) 2 CF) 2 PF 4 ] - , [((CF 3 ) 2 CFCF 2 ) 3 PF 3 ] - , or [ ((CF 3 ) 2 CFCF 2 ) 2 PF 4 ] - .
上述式(c18)表示之硼酸鹽陰離子之較佳之具體例,可列舉肆(五氟苯基)硼酸鹽([B(C6F5)4]-)、肆[(三氟甲基)苯基]硼酸鹽([B(C6H4CF3)4]-)、二氟雙(五氟苯基)硼酸鹽([(C6F5)2BF2]-)、三氟(五氟苯基)硼酸鹽([(C6F5)BF3]- )、肆(二氟苯基)硼酸鹽([B(C6H3F2)4]-)等。此等之中,特佳為肆(五氟苯基)硼酸鹽([B(C6F5)4]-)。 Preferred examples of the borate anion represented by the above formula (c18) include quinone (pentafluorophenyl) borate ([B(C 6 F 5 ) 4 ] - ), 肆[(trifluoromethyl)benzene. Boronate ([B(C 6 H 4 CF 3 ) 4 ] - ), difluorobis(pentafluorophenyl)borate ([(C 6 F 5 ) 2 BF 2 ] - ), trifluoro (five Fluorophenyl)borate ([(C 6 F 5 )BF 3 ] - ), fluorenyl (difluorophenyl) borate ([B(C 6 H 3 F 2 ) 4 ] - )). Among them, particularly preferred is quinone (pentafluorophenyl) borate ([B(C 6 F 5 ) 4 ] - ).
(C)成分中之第二態樣,可列舉2,4-雙(三氯甲基)-6-胡椒基-1,3,5-三嗪、2,4-雙(三氯甲基)-6-[2-(2-呋喃基)乙烯基]-s-三嗪、2,4-雙(三氯甲基)-6-[2-(5-甲基-2-呋喃基)乙烯基]-s-三嗪、2,4-雙(三氯甲基)-6-[2-(5-乙基-2-呋喃基)乙烯基]-s-三嗪、2,4-雙(三氯甲基)-6-[2-(5-丙基-2-呋喃基)乙烯基]-s-三嗪、2,4-雙(三氯甲基)-6-[2-(3,5-二甲氧基苯基)乙烯基]-s-三嗪、2,4-雙(三氯甲基)-6-[2-(3,5-二乙氧基苯基)乙烯基]-s-三嗪、2,4-雙(三氯甲基)-6-[2-(3,5-二丙氧基苯基)乙烯基]-s-三嗪、2,4-雙(三氯甲基)-6-[2-(3-甲氧基-5-乙氧基苯基)乙烯基]-s-三嗪、2,4-雙(三氯甲基)-6-[2-(3-甲氧基-5-丙氧基苯基)乙烯基]-s-三嗪、2,4-雙(三氯甲基)-6-[2-(3,4-亞甲基二氧基苯基)乙烯基]-s-三嗪、2,4-雙(三氯甲基)-6-(3,4-亞甲基二氧基苯基)-s-三嗪、2,4-雙-三氯甲基-6-(3-溴-4-甲氧基)苯基-s-三嗪、2,4-雙-三氯甲基-6-(2-溴-4-甲氧基)苯基-s-三嗪、2,4-雙-三氯甲基-6-(2-溴-4-甲氧基)苯乙烯基苯基-s-三嗪、2,4-雙-三氯甲基-6-(3-溴-4-甲氧基)苯乙烯基苯基-s-三嗪、2-(4-甲氧基苯基)-4,6-雙(三氯甲基)-1,3,5-三嗪、2-(4-甲氧基萘基)-4,6-雙(三氯甲基)-1,3,5-三嗪、2-[2-(2-呋喃基)乙烯基]-4,6-雙(三氯甲基)-1,3,5-三嗪、2-[2-(5-甲基-2-呋喃基)乙烯基]-4,6-雙(三氯甲基)-1,3,5-三嗪、2-[2-(3,5-二甲氧基苯基)乙烯基]-4,6-雙(三氯甲基)-1,3,5-三嗪、2-[2-(3,4-二 甲氧基苯基)乙烯基]-4,6-雙(三氯甲基)-1,3,5-三嗪、2-(3,4-亞甲基二氧基苯基)-4,6-雙(三氯甲基)-1,3,5-三嗪、參(1,3-二溴丙基)-1,3,5-三嗪、參(2,3-二溴丙基)-1,3,5-三嗪等之鹵素含有三嗪化合物、及參(2,3-二溴丙基)三聚異氰酸酯等之下述式(c3)表示之含鹵素之三嗪化合物。 The second aspect of the component (C) includes 2,4-bis(trichloromethyl)-6-piperidin-1,3,5-triazine and 2,4-bis(trichloromethyl). -6-[2-(2-furyl)vinyl]-s-triazine, 2,4-bis(trichloromethyl)-6-[2-(5-methyl-2-furyl)ethene Base]-s-triazine, 2,4-bis(trichloromethyl)-6-[2-(5-ethyl-2-furyl)vinyl]-s-triazine, 2,4-double (Trichloromethyl)-6-[2-(5-propyl-2-furyl)vinyl]-s-triazine, 2,4-bis(trichloromethyl)-6-[2-( 3,5-Dimethoxyphenyl)vinyl]-s-triazine, 2,4-bis(trichloromethyl)-6-[2-(3,5-diethoxyphenyl)ethene Base]-s-triazine, 2,4-bis(trichloromethyl)-6-[2-(3,5-dipropoxyphenyl)vinyl]-s-triazine, 2,4- Bis(trichloromethyl)-6-[2-(3-methoxy-5-ethoxyphenyl)vinyl]-s-triazine, 2,4-bis(trichloromethyl)-6 -[2-(3-methoxy-5-propoxyphenyl)vinyl]-s-triazine, 2,4-bis(trichloromethyl)-6-[2-(3,4- Methylenedioxyphenyl)vinyl]-s-triazine, 2,4-bis(trichloromethyl)-6-(3,4-methylenedioxyphenyl)-s-three Pyrazine, 2,4-bis-trichloromethyl-6-(3-bromo-4-methoxy)phenyl-s-triazine, 2,4-bis-trichloromethyl-6-(2- Bromo-4-methoxy)phenyl-s- Oxazine, 2,4-bis-trichloromethyl-6-(2-bromo-4-methoxy)styrylphenyl-s-triazine, 2,4-bis-trichloromethyl-6- (3-Bromo-4-methoxy)styrylphenyl-s-triazine, 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3, 5-triazine, 2-(4-methoxynaphthyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-[2-(2-furyl)ethylene 4,6-bis(trichloromethyl)-1,3,5-triazine, 2-[2-(5-methyl-2-furyl)vinyl]-4,6-bis ( Trichloromethyl)-1,3,5-triazine, 2-[2-(3,5-dimethoxyphenyl)vinyl]-4,6-bis(trichloromethyl)-1, 3,5-triazine, 2-[2-(3,4-di Methoxyphenyl)vinyl]-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-(3,4-methylenedioxyphenyl)-4, 6-bis(trichloromethyl)-1,3,5-triazine, 1,3-(dibromopropyl)-1,3,5-triazine, ginseng (2,3-dibromopropyl) The halogen-containing triazine compound, and a halogen-containing triazine compound represented by the following formula (c3), such as a triazine compound and a ginseng (2,3-dibromopropyl) trimer isocyanate.
上述式(c3)中,R9c、R10c、R11c各自獨立表示鹵化烷基。 In the above formula (c3), R 9c , R 10c and R 11c each independently represent a halogenated alkyl group.
又,(C)成分中之第三態樣,可列舉α-(p-甲苯磺醯氧基亞胺基)-苯基乙腈、α-(苯磺醯氧基亞胺基)-2,4-二氯苯基乙腈、α-(苯磺醯氧基亞胺基)-2,6-二氯苯基乙腈、α-(2-氯苯磺醯氧基亞胺基)-4-甲氧基苯基乙腈、α-(乙基磺醯氧基亞胺基)-1-環戊烯基乙腈、以及含有肟磺酸酯基之下述式(c4)表示之化合物。 Further, in the third aspect of the component (C), α-(p-toluenesulfonyloxyimido)-phenylacetonitrile or α-(phenylsulfonyloxyimino)-2,4 may be mentioned. -dichlorophenylacetonitrile, α-(phenylsulfonyloxyimino)-2,6-dichlorophenylacetonitrile, α-(2-chlorophenylsulfonyloxyimino)-4-methoxy Phenyl phenyl acetonitrile, α-(ethylsulfonyloxyimino)-1-cyclopentenylacetonitrile, and a compound represented by the following formula (c4) containing an oxime sulfonate group.
上述式(c4)中,R12c表示1價、2價、或3價之有機基,R13c表示取代或未取代之飽和烴基、不飽和烴基、或芳香族性化合物基,n表示括弧內之構造的重複單位數。 In the above formula (c4), R 12c represents a monovalent, divalent or trivalent organic group, R 13c represents a substituted or unsubstituted saturated hydrocarbon group, an unsaturated hydrocarbon group or an aromatic compound group, and n represents a parenthesis. The number of repeating units constructed.
上述式(c4)中,芳香族性化合物基係指表示顯示芳香族化合物特有之物理/化學特性之化合物之基,可列舉例如苯基、萘基等之芳基、或呋喃基、噻吩基等之雜芳基。此等可於環上具有1個以上之適當的取代基,例如鹵素原子、烷基、烷氧基、硝基等。又,R13c,特佳為碳數1~6之烷基,可列舉甲基、乙基、丙基、丁基。特別是R12c為芳香族性化合物基、R13c為碳數1~4之烷基的化合物為佳。 In the above formula (c4), the aromatic compound group is a group which represents a compound which exhibits physical/chemical properties peculiar to the aromatic compound, and examples thereof include an aryl group such as a phenyl group or a naphthyl group, or a furyl group or a thienyl group. Heteroaryl. These may have one or more appropriate substituents on the ring, such as a halogen atom, an alkyl group, an alkoxy group, a nitro group or the like. Further, R 13c is particularly preferably an alkyl group having 1 to 6 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group and a butyl group. In particular, a compound in which R 12c is an aromatic compound group and R 13c is an alkyl group having 1 to 4 carbon atoms is preferred.
上述式(c4)表示之酸產生劑,當n=1時,R12c為苯基、甲基苯基、甲氧基苯基之任一者,R13c為甲基之化合物,具體而言可列舉α-(甲基磺醯氧基亞胺基)-1-苯基乙腈、α-(甲基磺醯氧基亞胺基)-1-(p-甲基苯基)乙腈、α-(甲基磺醯氧基亞胺基)-1-(p-甲氧基苯基)乙腈、〔2-(丙基磺醯氧基亞胺基)-2,3-二羥基噻吩-3-亞基〕(o-甲苯基)乙腈等。當n=2時,上述式(c4)表示之光酸產生劑,具體而言可列舉下述式表示之光酸產生劑。 The acid generator represented by the above formula (c4), when n=1, R 12c is any one of a phenyl group, a methylphenyl group and a methoxyphenyl group, and R 13c is a methyl group, specifically Listed α-(methylsulfonyloxyimino)-1-phenylacetonitrile, α-(methylsulfonyloxyimino)-1-(p-methylphenyl)acetonitrile, α-( Methylsulfonyloxyimino)-1-(p-methoxyphenyl)acetonitrile, [2-(propylsulfonyloxyimino)-2,3-dihydroxythiophene-3-arylene Base] (o-tolyl) acetonitrile and the like. When n = 2, the photoacid generator represented by the above formula (c4), specifically, a photoacid generator represented by the following formula.
又,(C)成分中之第四態樣,可列舉於陽離子部具有萘環之鎓鹽。此「具有萘環」意指具有來自萘之構造,且意指至少2個環的構造與維持該等之芳香族性。此萘環亦可具有碳數1~6之直鏈狀或分支狀之烷基、羥基、碳數1~6之直鏈狀或分支狀之烷氧基等之取代基。來自萘環之構造,可為1價基(游離原子價為1)、亦可為2價基(游離原子價為2)以上,較佳為為1價基(惟,此時係除去 與上述取代基鍵結的部分,來計算游離原子價者)。萘環之數目較佳為1~3。 Further, the fourth aspect of the component (C) is exemplified by a phosphonium salt having a naphthalene ring in the cation portion. The phrase "having a naphthalene ring" means having a structure derived from naphthalene, and means a structure of at least two rings and maintaining the aromaticity. The naphthalene ring may have a substituent such as a linear or branched alkyl group having 1 to 6 carbon atoms, a hydroxyl group, or a linear or branched alkoxy group having 1 to 6 carbon atoms. The structure derived from the naphthalene ring may be a monovalent group (free valence of 1) or a divalent group (free valence of 2) or more, preferably a monovalent group (except that at this time, it is removed) The portion bonded to the above substituent to calculate the free atomic valence). The number of naphthalene rings is preferably from 1 to 3.
這種陽離子部具有萘環之鎓鹽的陽離子部,較佳為下述式(c5)表示之構造。 The cation portion has a cation portion of a sulfonium salt of a naphthalene ring, and preferably has a structure represented by the following formula (c5).
上述式(c5)中,R14c、R15c、R16c之中至少1個表示以下述式(c6)表示之基,其餘表示碳數1~6之直鏈狀或分支狀之烷基、可具有取代基之苯基、羥基、或碳數1~6之直鏈狀或分支狀之烷氧基。或R14c、R15c、R16c之中之1個為下述式(c6)表示之基,其餘2個各自獨立為碳數1~6之直鏈狀或分支狀之伸烷基,此等之末端亦可鍵結而成為環狀。 In the above formula (c5), at least one of R 14c , R 15c and R 16c represents a group represented by the following formula (c6), and the remainder represents a linear or branched alkyl group having 1 to 6 carbon atoms. A phenyl group having a substituent, a hydroxyl group, or a linear or branched alkoxy group having 1 to 6 carbon atoms. Or one of R 14c , R 15c and R 16c is a group represented by the following formula (c6), and the other two are each independently a linear or branched alkyl group having 1 to 6 carbon atoms; The ends can also be bonded to form a ring shape.
上述式(c6)中,R17c、R18c各自獨立地表示羥基、碳數1~6之直鏈狀或分支狀之烷氧基、或碳數1~6之 直鏈狀或分支狀之烷基,R19c表示單鍵或可具有取代基之碳數1~6之直鏈狀或分支狀之伸烷基。l及m各自獨立地表示0~2之整數,l+m為3以下。但是R17c存在有複數個的情形,彼等可彼此相同亦可相異。又,R18c存在有複數個的情形,彼等可彼此相同亦可相異。 In the above formula (c6), R 17c and R 18c each independently represent a hydroxyl group, a linear or branched alkoxy group having 1 to 6 carbon atoms, or a linear or branched alkane having 1 to 6 carbon atoms. And R 19c represents a single bond or a linear or branched alkyl group having 1 to 6 carbon atoms which may have a substituent. l and m each independently represent an integer of 0 to 2, and l+m is 3 or less. However, there are a plurality of cases in which R 17c exists, and they may be identical to each other or different. Further, there are a plurality of cases in which R 18c exists, and they may be the same or different from each other.
上述R14c、R15c、R16c之中,上述式(c6)表示之基的數目,就化合物之安定性的觀點,較佳為1個,其餘為碳數1~6之直鏈狀或分支狀之伸烷基,此等之末端亦可鍵結而成為環狀。此時,上述2個伸烷基,包含硫原子構成3~9員環。構成環的原子(包含硫原子)之數目,較佳為5~6。 Among the above R 14c , R 15c and R 16c , the number of the groups represented by the above formula (c6) is preferably one from the viewpoint of the stability of the compound, and the remainder is a linear or branched carbon number of 1 to 6. The alkyl group may be bonded to the end to form a ring. In this case, the above two alkylene groups contain a sulfur atom to form a 3 to 9 member ring. The number of atoms (including sulfur atoms) constituting the ring is preferably 5 to 6.
又,上述伸烷基可具有之取代基,可列舉氧原子(此時,與構成伸烷基之碳原子一起形成羰基)、羥基等。 Further, the substituent which the above-mentioned alkylene group may have may be an oxygen atom (in this case, a carbonyl group is formed together with a carbon atom constituting an alkylene group), a hydroxyl group or the like.
又,苯基可具有之取代基,可列舉羥基、碳數1~6之直鏈狀或分支狀之烷氧基、碳數1~6之直鏈狀或分支狀之烷基等。 Further, the phenyl group may have a substituent, and examples thereof include a hydroxyl group, a linear or branched alkoxy group having 1 to 6 carbon atoms, and a linear or branched alkyl group having 1 to 6 carbon atoms.
此等之陽離子部,較適合者可列舉下述式(c7)、(c8)表示者等,特佳為下述式(c8)表示之構造。 The cation portion of the above-mentioned formula (c7) or (c8) is preferable, and the structure represented by the following formula (c8) is particularly preferable.
這種陽離子部,可為錪鹽亦可為鋶鹽,但就酸產生效率等之觀點,較佳為鋶鹽。 The cation portion may be an onium salt or a phosphonium salt. From the viewpoint of acid production efficiency and the like, a phosphonium salt is preferred.
因此,作為於陽離子部具有萘環之鎓鹽的陰離子部,適合者較佳為可形成鋶鹽的陰離子。 Therefore, as the anion portion having a sulfonium salt of a naphthalene ring in the cation portion, an anion capable of forming a sulfonium salt is preferred.
這種酸產生劑的陰離子部係氫原子之一部分或全部被氟化之氟烷基磺酸離子或芳基磺酸離子。 A part or all of the anion moiety hydrogen atom of the acid generator is fluorinated fluoroalkylsulfonate ion or arylsulfonate ion.
氟烷基磺酸離子中之烷基,可為碳數1~20之直鏈狀、分支狀、環狀,就所產生之酸的大體積程度與其擴散距離而言,較佳為碳數1~10。特別是分支狀或環狀者因擴散距離短,故較佳。又,可廉價合成而言,較佳者可列舉甲基、乙基、丙基、丁基、辛基等。 The alkyl group in the fluoroalkylsulfonic acid ion may be a linear chain, a branched chain or a ring having a carbon number of 1 to 20, and preferably has a carbon number of 1 in terms of a large volume of the acid produced and a diffusion distance thereof. ~10. In particular, branches or rings are preferred because of their short diffusion distance. Further, in terms of inexpensive synthesis, a methyl group, an ethyl group, a propyl group, a butyl group, an octyl group or the like is preferable.
芳基磺酸離子中之芳基係碳數6~20之芳基,可列舉可被烷基、鹵素原子取代或不被取代之苯基、萘基。特別是就可廉價合成而言,較佳為碳數6~10之芳基。較佳者的具體例,可列舉苯基、甲苯磺醯基、乙基苯基、萘基、甲基萘基等。 The aryl group in the arylsulfonic acid ion is an aryl group having 6 to 20 carbon atoms, and examples thereof include a phenyl group and a naphthyl group which may be substituted or unsubstituted with an alkyl group or a halogen atom. In particular, in the case of inexpensive synthesis, an aryl group having 6 to 10 carbon atoms is preferred. Specific examples of preferred examples include a phenyl group, a tolsulfonyl group, an ethylphenyl group, a naphthyl group, and a methylnaphthyl group.
上述氟烷基磺酸離子或芳基磺酸離子中,氫原子之一部分或全部被氟化時的氟化率,較佳為10~100%、更佳為50~100%,特別是氫原子全部被氟原子取代者,因酸的強度變強,故較佳。如此者,具體而言可列舉三氟甲烷磺酸酯、全氟丁烷磺酸酯、全氟辛烷磺酸酯、全氟苯磺酸酯等。 In the above fluoroalkylsulfonate ion or arylsulfonate ion, a fluorination ratio when a part or all of a hydrogen atom is fluorinated is preferably 10 to 100%, more preferably 50 to 100%, particularly a hydrogen atom. All of them substituted by fluorine atoms are preferred because the strength of the acid is increased. Specific examples thereof include trifluoromethanesulfonate, perfluorobutanesulfonate, perfluorooctanesulfonate, and perfluorobenzenesulfonate.
此等之中,較佳之陰離子部,可列舉下述式(c9)表示者。 Among these, the preferred anion moiety is represented by the following formula (c9).
R20cSO3 - (c9) R 20c SO 3 - (c9)
上述式(c9)中,R20c係以下述式(c10)、(c11)表示之基、或以下述式(c12)表示之基。 In the above formula (c9), R 20c is a group represented by the following formulas (c10) and (c11) or a group represented by the following formula (c12).
上述式(c10)中,x表示1~4之整數。又,上述式(c11)中,R21c表示氫原子、羥基、碳數1~6之直鏈狀或分支狀之烷基、或碳數1~6之直鏈狀或分支狀之烷氧基,y表示1~3之整數。此等之中,就安全性之觀點而言,較佳為三氟甲烷磺酸酯、全氟丁烷磺酸酯。 In the above formula (c10), x represents an integer of 1 to 4. Further, in the above formula (c11), R 21c represents a hydrogen atom, a hydroxyl group, a linear or branched alkyl group having 1 to 6 carbon atoms, or a linear or branched alkoxy group having 1 to 6 carbon atoms. , y represents an integer from 1 to 3. Among these, from the viewpoint of safety, trifluoromethanesulfonate or perfluorobutanesulfonate is preferred.
又,陰離子部亦可使用下述式(c13)、(c14)表示之含有氮者。 Further, the anion portion may be one containing nitrogen represented by the following formulas (c13) and (c14).
上述式(c13)、(c14)中,Xc表示至少1個氫原子被氟原子取代之直鏈狀或分支狀之伸烷基,該伸烷基之碳數為2~6、較佳為3~5、最佳為碳數3。又,Yc、Zc分別獨立表示至少1個氫原子被氟原子取代之直鏈狀或分支狀之烷基,該烷基之碳數為1~10、較佳為1~7、更佳為1~3。 In the above formulae (c13) and (c14), X c represents a linear or branched alkyl group in which at least one hydrogen atom is substituted by a fluorine atom, and the alkyl group has a carbon number of 2 to 6, preferably 3~5, the best is carbon number 3. Further, Y c and Z c each independently represent a linear or branched alkyl group in which at least one hydrogen atom is replaced by a fluorine atom, and the alkyl group has a carbon number of 1 to 10, preferably 1 to 7, more preferably It is 1~3.
Xc之伸烷基之碳數、或Yc、Zc之烷基之碳數越小,對有機溶劑之溶解性亦越良好,故較佳。 The smaller the carbon number of the alkyl group of X c or the carbon number of the alkyl group of Y c and Z c , the better the solubility in an organic solvent, which is preferable.
又,Xc之伸烷基或Yc、Zc之烷基中,被氟原子取代之氫原子數目越多,酸之強度變得越強,故較佳。該伸烷基或烷基中之氟原子的比例,亦即氟化率,較佳為70~100%、更佳為90~100%、最佳為全部的氫原子被氟原子取代之全氟伸烷基或全氟烷基。 Further, in the alkyl group of X c or the alkyl group of Y c or Z c , the larger the number of hydrogen atoms substituted by fluorine atoms, the stronger the strength of the acid, which is preferable. The proportion of the fluorine atom in the alkyl group or the alkyl group, that is, the fluorination rate, is preferably 70 to 100%, more preferably 90 to 100%, and most preferably the entire hydrogen atom is replaced by a fluorine atom. An alkyl or perfluoroalkyl group.
這種陽離子部具有萘環之鎓鹽,較佳者可列 舉下述式(c15)、(c16)表示之化合物。 The cation portion has a naphthalene ring and is preferably listed. The compounds represented by the following formulas (c15) and (c16) are given.
又,(C)成分中之第五態樣,可列舉雙(p-甲苯磺醯基)重氮甲烷、雙(1,1-二甲基乙基磺醯基)重氮甲烷、雙(環己基磺醯基)重氮甲烷、雙(2,4-二甲基苯基磺醯基)重氮甲烷等之雙磺醯基重氮甲烷類;p-甲苯磺酸2-硝基苄酯、p-甲苯磺酸2,6-二硝基苄酯、甲苯磺酸硝基苄酯、甲苯磺酸二硝基苄酯、磺酸硝基苄酯、碳酸硝基苄酯、碳酸二硝基苄酯等之硝基苄基衍生物;焦掊酚三氟甲磺酸酯、焦掊酚三甲苯磺酸酯、甲苯磺酸苄酯、磺酸苄酯、N-甲基磺醯氧基琥珀醯亞胺、N-三氯甲基磺醯氧基琥珀醯亞胺、N-苯基磺醯氧基馬來醯亞胺、N-甲基磺醯氧基鄰苯二甲醯亞胺等之磺酸酯類;N-羥基鄰苯二甲醯亞胺、N-羥基萘二甲醯亞胺等之三氟甲烷磺酸酯類;二苯基錪六氟磷酸鹽、(4-甲氧基苯基)苯基錪三氟甲烷磺酸鹽、雙(p-tert-丁基苯 基)錪三氟甲烷磺酸鹽、三苯基鋶六氟磷酸鹽、(4-甲氧基苯基)二苯基鋶三氟甲烷磺酸鹽、(p-tert-丁基苯基)二苯基鋶三氟甲烷磺酸鹽等之鎓鹽類;苯偶姻甲苯磺酸酯、α-甲基苯偶姻甲苯磺酸酯等之苯偶姻甲苯磺酸酯類;其他之二苯基錪鹽、三苯基鋶鹽、苯基重氮鎓鹽、苄基碳酸酯等。 Further, the fifth aspect of the component (C) includes bis(p-toluenesulfonyl)diazomethane, bis(1,1-dimethylethylsulfonyl)diazomethane, and bis (ring). Hexylsulfonyl) diazomethanediazomethane such as diazomethane, bis(2,4-dimethylphenylsulfonyl)diazomethane; 2-nitrobenzyl p-toluenesulfonate, 2,6-dinitrobenzyl p-toluenesulfonate, nitrobenzyl p-toluenesulfonate, dinitrobenzyl tosylate, nitrobenzyl sulfonate, nitrobenzyl carbonate, dinitrobenzyl carbonate a nitrobenzyl derivative of an ester or the like; pyrogallol trifluoromethanesulfonate, pyrogallol trimethylsulfonate, benzyl tosylate, benzyl sulfonate, N-methylsulfonyloxyarene Sulphur of imine, N-trichloromethylsulfonyloxysuccinimide, N-phenylsulfonyloxymaleimide, N-methylsulfonyloxyphthalimide, etc. Acid esters; trifluoromethanesulfonates such as N-hydroxyphthalic imine, N-hydroxynaphthalene imine, etc.; diphenylphosphonium hexafluorophosphate, (4-methoxybenzene) Phenyltrifluoromethanesulfonate, bis(p-tert-butylbenzene (錪)trifluoromethanesulfonate, triphenylsulfonium hexafluorophosphate, (4-methoxyphenyl)diphenylphosphonium trifluoromethanesulfonate, (p-tert-butylphenyl) a sulfonium salt such as phenylsulfonium trifluoromethanesulfonate; a benzoin tosylate such as benzoin tosylate or α-methylbenzoin tosylate; Anthracene salt, triphenylsulfonium salt, phenyldiazonium salt, benzyl carbonate, and the like.
本發明之正型感光性樹脂組成物中,(C)成分之含量,在不阻礙本發明之目的之範圍內並無特別限定,相對於(A)成分100質量份,較佳為0.1~15質量份,更佳為1~10質量份。 In the positive photosensitive resin composition of the present invention, the content of the component (C) is not particularly limited as long as it does not inhibit the object of the present invention, and is preferably 0.1 to 15 with respect to 100 parts by mass of the component (A). The mass part is more preferably 1 to 10 parts by mass.
本發明之正型感光性樹脂組成物也可再含有(D)成分。藉此,阻劑圖型形狀容易變得良好,例如容易得到側壁之垂直性高,矩形性優異的阻劑圖型。可得到此效果的理由,未明確,但是推測三級脂肪族胺均勻分散阻劑膜中,可有效地抑制由(C)成分所產生之酸之擴散。又,藉由含有(D)成分,也容易提高正型感光性樹脂組成物之放置經時安定性等。(D)成分可單獨使用或組合2種以上使用。 The positive photosensitive resin composition of the present invention may further contain the component (D). Thereby, the shape of the resist pattern is likely to be good, and for example, it is easy to obtain a resist pattern having a high verticality of the side wall and excellent squareness. Although the reason why this effect can be obtained is not clear, it is estimated that the diffusion of the acid generated by the component (C) can be effectively suppressed in the tertiary aliphatic amine uniformly dispersed resist film. Moreover, by containing the component (D), it is also easy to improve the stability of the positive photosensitive resin composition during storage and the like. The component (D) may be used singly or in combination of two or more.
三級脂肪族胺已提案有多種多樣者,故任意使用公知者即可,可列舉如,氨NH3之3個氫原子全部被碳數12以下之烷基或羥烷基所取代之胺(三烷基胺或三(烷醇)胺)。 The tertiary aliphatic amine has been proposed in a wide variety of ways, and any known one may be used. For example, an amine in which all three hydrogen atoms of ammonia NH 3 are replaced by an alkyl group having 12 or less carbon atoms or a hydroxyalkyl group (for example) may be mentioned. Trialkylamine or tri(alkanol)amine).
三烷基胺之具體例,可列舉如,三甲基胺、三乙基 胺、三-n-丙基胺、三-n-丁基胺、三-n-己基胺、三-n-戊基胺、三-n-庚基胺、三-n-辛基胺、三-n-壬基胺、三-n-癸基胺、三-n-十二烷基胺等。 Specific examples of the trialkylamine include, for example, trimethylamine and triethylamine. Amine, tri-n-propylamine, tri-n-butylamine, tri-n-hexylamine, tri-n-pentylamine, tri-n-heptylamine, tri-n-octylamine, three -n-decylamine, tri-n-decylamine, tri-n-dodecylamine, and the like.
三(烷醇)胺之具體例,可列舉如,三乙醇胺、三異丙醇胺、三-n-辛醇胺等。 Specific examples of the tri(alkanol)amine include triethanolamine, triisopropanolamine, and tri-n-octanolamine.
三級脂肪族胺可單獨使用1種,或可併用2種以上。 The tertiary aliphatic amine may be used singly or in combination of two or more.
(D)成分中,三級脂肪族胺之比例,為了本發明效果時,較佳為10~100質量%、更佳為50~100質量%、最佳為100質量%。 In the component (D), the ratio of the tertiary aliphatic amine is preferably from 10 to 100% by mass, more preferably from 50 to 100% by mass, most preferably 100% by mass, in order to obtain the effect of the present invention.
本發明中,作為(D)成分,在不損及本發明效果的範圍內。也可含有三級脂肪族胺以外的含氮有機化合物。 In the present invention, the component (D) is within the range not detracting from the effects of the present invention. A nitrogen-containing organic compound other than a tertiary aliphatic amine may also be contained.
三級脂肪族胺以外之含氮有機化合物,無特別限定,任意使用公知者即可。具體而言,可列舉例如環式胺、三級脂肪族胺以外之脂肪族胺等。 The nitrogen-containing organic compound other than the tertiary aliphatic amine is not particularly limited, and any one of them may be used arbitrarily. Specific examples thereof include an aliphatic amine other than a cyclic amine and a tertiary aliphatic amine.
在此,本發明中,「脂肪族胺」係指氨NH3之3個氫原子之中,至少1個被1價脂肪族基所取代之構造,且分子內不具有環構造之鏈狀的胺。該脂肪族基係碳數為1~12者為佳。 Here, in the present invention, the "aliphatic amine" means a structure in which at least one of the three hydrogen atoms of ammonia NH 3 is substituted with a monovalent aliphatic group, and has no chain structure in the molecule. amine. It is preferred that the aliphatic group has a carbon number of from 1 to 12.
「環式胺」係指分子內具有環構造的胺,環構造可為脂肪族也可為芳香族者。 "Cyclic amine" means an amine having a ring structure in a molecule, and the ring structure may be either aliphatic or aromatic.
環式胺,可列舉如,含有作為雜原子之氮原子之雜環化合物等。該雜環化合物,可為單環式者(脂肪 族單環式胺),亦可為多環式者(脂肪族多環式胺)。 The cyclic amine may, for example, be a heterocyclic compound containing a nitrogen atom as a hetero atom. The heterocyclic compound, which can be monocyclic (fat) The family of monocyclic amines can also be polycyclic (aliphatic polycyclic amines).
脂肪族單環式胺,具體而言,可列舉如,哌啶、哌嗪等。 The aliphatic monocyclic amine is specifically, for example, piperidine or piperazine.
脂肪族多環式胺,較佳為碳數6~10者,具體而言,可列舉如1,5-二氮雜雙環[4.3.0]-5-壬烯、1,8-二氮雜雙環[5.4.0]-7-十一烯、六亞甲基四胺、1,4-二氮雜雙環[2.2.2]辛烷等。 The aliphatic polycyclic amine is preferably a carbon number of 6 to 10, and specific examples thereof include 1,5-diazabicyclo[4.3.0]-5-nonene and 1,8-diaza Bicyclo [5.4.0]-7-undecene, hexamethylenetetramine, 1,4-diazabicyclo[2.2.2]octane, and the like.
三級脂肪族胺以外之脂肪族胺,可列舉如,氨NH3中之1個氫原子被碳數12以下之烷基或羥烷基所取代之胺(單烷基胺或單(烷醇)胺);氨NH3之2個氫原子被碳數12以下之烷基或羥基烷基取代之胺(二烷基胺或二(烷基醇)胺)等。單烷基胺之具體例,可列舉例如n-己基胺、n-庚基胺、n-辛基胺、n-壬基胺、n-癸基胺等。 The aliphatic amine other than the tertiary aliphatic amine may, for example, be an amine in which one hydrogen atom of ammonia NH 3 is substituted with an alkyl group having at least 12 carbon atoms or a hydroxyalkyl group (monoalkylamine or monoalcohol). An amine); an amine (dialkylamine or di(alkyl alcohol)amine) in which two hydrogen atoms of ammonia NH 3 are substituted with an alkyl group having 12 or less carbon atoms or a hydroxyalkyl group. Specific examples of the monoalkylamine include, for example, n-hexylamine, n-heptylamine, n-octylamine, n-decylamine, n-decylamine, and the like.
二烷基胺之具體例,可列舉二乙基胺、二-n-丙基胺、二-n-庚基胺、二-n-辛基胺、二環己基胺等。 Specific examples of the dialkylamine include diethylamine, di-n-propylamine, di-n-heptylamine, di-n-octylamine, dicyclohexylamine, and the like.
二(烷基醇)胺之具體例,可列舉二乙醇胺、二異丙醇胺、二-n-辛醇胺等。 Specific examples of the di(alkyl alcohol) amine include diethanolamine, diisopropanolamine, and di-n-octanolamine.
此等可單獨使用或可組合2種以上使用。 These may be used alone or in combination of two or more.
本發明之正型感光性樹脂組成物中,(D)成分之含量,容易得到藉由添加(D)成分所得之效果的觀點,相對於(A)成分100質量份,較佳為0.005~5.0質量份,更佳為0.01~0.3質量份,又更佳為0.015~0.2質量份。 In the positive photosensitive resin composition of the present invention, the content of the component (D) is easily obtained by adding the component (D), and is preferably 0.005 to 5.0 with respect to 100 parts by mass of the component (A). The mass fraction is more preferably 0.01 to 0.3 parts by mass, and more preferably 0.015 to 0.2 parts by mass.
本發明之正型感光性樹脂組成物,亦可含有有機溶劑(S)。上述正型感光性樹脂組成物藉由含有有機溶劑(S),而上述正型感光性樹脂組成物之塗佈性、或使用上述正型感光性樹脂組成物所形成之正型感光性樹脂層之膜厚之調整變得容易。(S)成分可單獨或組合2種以上使用。 The positive photosensitive resin composition of the present invention may further contain an organic solvent (S). The positive photosensitive resin composition contains an organic solvent (S), and the coating property of the positive photosensitive resin composition or the positive photosensitive resin layer formed using the positive photosensitive resin composition The adjustment of the film thickness is easy. The (S) component may be used alone or in combination of two or more.
(S)成分之具體例,可列舉丙酮、甲基乙基酮、環己酮、甲基異戊酮、2-庚酮等之酮類;乙二醇、乙二醇單乙酸酯、二乙二醇、二乙二醇單乙酸酯、丙二醇、丙二醇單乙酸酯、二丙二醇、及二丙二醇單乙酸酯、及此等之單甲基醚、單乙基醚、單丙基醚、單丁基醚、或單苯基醚(例如丙二醇單甲基醚乙酸酯)等之多元醇類及其衍生物;二噁烷等之環式醚類;甲酸乙酯、乳酸甲酯、乳酸乙酯、乙酸甲酯、乙酸乙酯、乙酸丁酯、丙酮酸甲酯、乙醯乙酸甲酯、乙醯乙酸乙酯、丙酮酸乙酯、乙氧基乙酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯、2-羥基丙酸甲酯、2-羥基丙酸乙酯、2-羥基-2-甲基丙酸乙酯、2-羥基-3-甲基丁酸甲酯、3-甲氧基丁基乙酸酯、3-甲基-3-甲氧基丁基乙酸酯等之酯類;甲苯、二甲苯等之芳香族烴類;等。 Specific examples of the component (S) include ketones such as acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl ketone, and 2-heptanone; ethylene glycol, ethylene glycol monoacetate, and Ethylene glycol, diethylene glycol monoacetate, propylene glycol, propylene glycol monoacetate, dipropylene glycol, and dipropylene glycol monoacetate, and monomethyl ether, monoethyl ether, monopropyl ether Polyols such as monobutyl ether or monophenyl ether (for example, propylene glycol monomethyl ether acetate) and derivatives thereof; cyclic ethers such as dioxane; ethyl formate, methyl lactate, Ethyl lactate, methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, methyl acetate, ethyl acetate, ethyl pyruvate, ethyl ethoxyacetate, methoxypropionic acid Methyl ester, ethyl ethoxypropionate, methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, 2-hydroxy-3-methylbutyric acid An ester such as a methyl ester, 3-methoxybutyl acetate or 3-methyl-3-methoxybutyl acetate; an aromatic hydrocarbon such as toluene or xylene; or the like.
本發明之正型感光性樹脂組成物中,有機溶劑(S)之含量係相對於(A)成分100質量份,較佳為50~3000質量份,更佳為100~2000質量份。上述含量為上述範圍內時,容易提高上述正型感光性樹脂組成物之塗佈性,使用上述正型感光性樹脂組成物所形成之正型感光性樹脂組成物層之膜厚之調整變得容易。 In the positive photosensitive resin composition of the present invention, the content of the organic solvent (S) is preferably from 50 to 3,000 parts by mass, more preferably from 100 to 2,000 parts by mass, per 100 parts by mass of the component (A). When the content is within the above range, the coating property of the positive photosensitive resin composition is likely to be improved, and the film thickness of the positive photosensitive resin composition layer formed using the positive photosensitive resin composition is adjusted. easily.
本發明之正型感光性樹脂組成物,為了提高所形成之被膜的可塑性,亦可進一步含有聚乙烯基樹脂。聚乙烯基樹脂之具體例,可列舉聚氯乙烯、聚苯乙烯、聚羥基苯乙烯、聚乙酸乙烯酯、聚乙烯基苯甲酸、聚乙烯基甲基醚、聚乙烯基乙基醚、聚乙烯醇、聚乙烯基吡咯烷酮、聚乙烯基酚、及此等之共聚物等。聚乙烯基樹脂,由玻璃轉移溫度低的觀點,較佳為聚乙烯基甲基醚。 The positive photosensitive resin composition of the present invention may further contain a polyvinyl resin in order to improve the plasticity of the formed film. Specific examples of the polyvinyl resin include polyvinyl chloride, polystyrene, polyhydroxystyrene, polyvinyl acetate, polyvinylbenzoic acid, polyvinyl methyl ether, polyvinyl ethyl ether, and polyethylene. An alcohol, a polyvinylpyrrolidone, a polyvinyl phenol, a copolymer of these, and the like. The polyvinyl resin is preferably a polyvinyl methyl ether from the viewpoint of a low glass transition temperature.
本發明之正型感光性樹脂組成物,為了提高與支撐體之接著性,亦可進一步含有接著助劑。 The positive photosensitive resin composition of the present invention may further contain a secondary auxiliary agent in order to improve the adhesion to the support.
本發明之正型感光性樹脂組成物,為了提高塗佈性、消泡性、平坦性等,亦可進一步含有界面活性劑。界面活性劑之具體例,可列舉BM-1000、BM-1100(均為BM Chemie公司製)、Megafac F142D、Megafac F172、Megafac F173、Megafac F183(均為大日本油墨化學工業公司製)、Fluorad FC-135、Fluorad FC-170C、Fluorad FC-430、Fluorad FC-431(均為住友3M公司製)、Surflon S-112、Surflon S-113、Surflon S-131、Surflon S-141、Surflon S-145(均為旭硝子公司製)、SH-28PA、SH-190、SH-193、SZ-6032、SF-8428(均為Toray Silicone公司製)等之市售氟系界面活性劑,但不限定於此等。 The positive photosensitive resin composition of the present invention may further contain a surfactant in order to improve coatability, defoaming property, flatness, and the like. Specific examples of the surfactant include BM-1000, BM-1100 (both manufactured by BM Chemie Co., Ltd.), Megafac F142D, Megafac F172, Megafac F173, and Megafac F183 (all manufactured by Dainippon Ink and Chemicals Co., Ltd.), and Fluorad FC. -135, Fluorad FC-170C, Fluorad FC-430, Fluorad FC-431 (both Sumitomo 3M), Surflon S-112, Surflon S-113, Surflon S-131, Surflon S-141, Surflon S-145 (all are manufactured by Asahi Glass Co., Ltd.), SH-28PA, SH-190, SH-193, SZ-6032, SF-8428 (all manufactured by Toray Silicone Co., Ltd.), etc., but are not limited thereto. Wait.
本發明之正型感光性樹脂組成物,為了進行對顯影液之溶解性的微調整,亦可進一步含有酸或酸酐。 The positive photosensitive resin composition of the present invention may further contain an acid or an acid anhydride in order to finely adjust the solubility of the developer.
酸及酸酐之具體例,可列舉乙酸、丙酸、n-丁酸、異丁酸、n-戊酸、異戊酸、苯甲酸、桂皮酸等之單羧酸類;乳酸、2-羥基丁酸、3-羥基丁酸、水楊酸、m-羥基苯甲酸、p-羥基苯甲酸、2-羥基桂皮酸、3-羥基桂皮酸、4-羥基桂皮酸、5-羥基間苯二甲酸、丁香酸等之羥基單羧酸類;草酸、琥珀酸、戊二酸、己二酸、馬來酸、伊康酸、六氫苯二甲酸、苯二甲酸、間苯二甲酸、對苯二甲酸、1,2-環己烷二羧酸、1,2,4-環己烷三羧酸、丁烷四羧酸、苯均四酸、偏苯三甲酸、環戊烷四羧酸、丁烷四羧酸、1,2,5,8-萘四羧酸等之多元羧酸類;伊康酸酐、琥珀酸酐、檸康酸酐、十二烯基琥珀酸酐、丙三羧酸(Tricarballylic Acid)酐、馬來酸酐、六氫化苯二甲酸酐、甲基四氫苯二甲酸酐、降莰烯二酸酐(himic anhydride)、1,2,3,4-丁烷四羧酸酐、環戊烷四羧酸二酐、苯二甲酸酐、偏苯三甲酸酐、苯均四酸酐、二苯甲酮四羧酸酐、乙二醇雙偏苯三甲酸酐、甘油三偏苯三甲酸酐等之酸酐等。 Specific examples of the acid and the acid anhydride include monocarboxylic acids such as acetic acid, propionic acid, n-butyric acid, isobutyric acid, n-valeric acid, isovaleric acid, benzoic acid, and cinnamic acid; and lactic acid and 2-hydroxybutyric acid. , 3-hydroxybutyric acid, salicylic acid, m-hydroxybenzoic acid, p-hydroxybenzoic acid, 2-hydroxycinnamic acid, 3-hydroxycinnamic acid, 4-hydroxycinnamic acid, 5-hydroxyisophthalic acid, clove Hydroxy monocarboxylic acids such as acid; oxalic acid, succinic acid, glutaric acid, adipic acid, maleic acid, itaconic acid, hexahydrophthalic acid, phthalic acid, isophthalic acid, terephthalic acid, 1 , 2-cyclohexanedicarboxylic acid, 1,2,4-cyclohexanetricarboxylic acid, butanetetracarboxylic acid, pyromellitic acid, trimellitic acid, cyclopentane tetracarboxylic acid, butane tetracarboxylic acid Polycarboxylic acids such as acid, 1,2,5,8-naphthalenetetracarboxylic acid; itaconic anhydride, succinic anhydride, citraconic anhydride, dodecenyl succinic anhydride, tricarballylic acid anhydride, Malay Anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, himic anhydride, 1,2,3,4-butanetetracarboxylic anhydride, cyclopentane tetracarboxylic dianhydride , phthalic anhydride, trimellitic anhydride Pyromellitic anhydride, benzophenone tetracarboxylic anhydride, ethylene glycol bis trimellitic anhydride, trimellitic anhydride triglyceride, etc. anhydride.
本發明之微透鏡圖型製造用正型感光性樹脂組成物,可藉由將上述各成分以通常方法混合、攪拌即可調製,亦依需要,可使用溶解器(dissolver)、均質器、3輥磨機等之分散機進行分散、混合。又,混合後亦可進一步使用網目、膜過濾器等來過濾。 The positive photosensitive resin composition for producing a microlens pattern of the present invention can be prepared by mixing and stirring the above components in a usual manner, and a dissolver, a homogenizer, or the like can be used as needed. A disperser such as a roll mill is dispersed and mixed. Further, after mixing, it may be further filtered using a mesh, a membrane filter or the like.
本發明之微透鏡圖型之製造方法,其係包含以下步驟:使用本發明之正型感光性樹脂組成物,形成正型感光性樹脂組成物層之正型感光性樹脂組成物層形成步驟,將上述正型感光性樹脂組成物層選擇性曝光的曝光步驟,將曝光後之上述正型感光性樹脂組成物層進行顯影的顯影步驟,及將顯影後之上述正型感光性樹脂組成物層進行加熱的加熱步驟。 The method for producing a microlens pattern according to the present invention includes the step of forming a positive photosensitive resin composition layer forming a positive photosensitive resin composition layer by using the positive photosensitive resin composition of the present invention, An exposure step of selectively exposing the positive photosensitive resin composition layer, a development step of developing the exposed positive photosensitive resin composition layer after exposure, and a positive photosensitive resin composition layer after development A heating step in which heating is performed.
正型感光性樹脂組成物層形成步驟中,使用本發明之正型感光性樹脂組成物,形成正型感光性樹脂組成物層。上述正型感光性樹脂組成物層較佳為形成於基材上。基材可列舉後述之透鏡材料層。 In the positive photosensitive resin composition layer forming step, the positive photosensitive resin composition layer of the present invention is used to form a positive photosensitive resin composition layer. The positive photosensitive resin composition layer is preferably formed on a substrate. The substrate may be exemplified by a lens material layer to be described later.
形成上述正型感光性樹脂組成物層的方法,無特別限定,可使用以往公知的方法。正型感光性樹脂組成物為固體或高黏度之凝膠的情形,例如將所定量之正型感光性樹脂組成物供給基材上後,將正型感光性樹脂組成物進行適宜加熱,同時進行壓製的方法,可形成正型感光性樹脂組成物層。正型感光性樹脂組成物為液體的情形,(例如正型感光性樹脂組成物含有有機溶劑(S)的情形),使用例如輥塗佈機、逆輥塗佈機、塗佈棒、狹縫塗佈機等之接觸轉印型塗佈裝置或、旋轉器(旋轉式塗佈裝置)、淋幕 式平面塗佈機(curtain flow coater)等之非接觸型塗佈裝置,藉由將正型感光性樹脂組成物塗佈於基材上,成為所望的膜厚,形成塗膜,適宜加熱處理(預烤(塗佈後烤(PAB:post applied bake))處理)除去塗膜中之有機溶劑,可形成正型感光性樹脂組成物層。 The method of forming the positive photosensitive resin composition layer is not particularly limited, and a conventionally known method can be used. When the positive photosensitive resin composition is a solid or a high-viscosity gel, for example, after a predetermined amount of the positive photosensitive resin composition is supplied onto a substrate, the positive photosensitive resin composition is appropriately heated and simultaneously performed. The method of pressing forms a positive photosensitive resin composition layer. When the positive photosensitive resin composition is a liquid (for example, when the positive photosensitive resin composition contains an organic solvent (S)), for example, a roll coater, a reverse roll coater, a coating bar, and a slit are used. Contact transfer type coating device such as coater, rotator (rotary coating device), shower curtain A non-contact type coating apparatus such as a curtain flow coater is formed by applying a positive photosensitive resin composition to a substrate to have a desired film thickness, and forming a coating film, which is suitable for heat treatment ( The pre-baked (PAB: post applied bake) treatment removes the organic solvent in the coating film to form a positive photosensitive resin composition layer.
上述加熱處理之條件係因組成物中之各成分之種類、調配比例、塗佈膜厚等而異,但是加熱溫度例如為60~150℃(較佳為70~140℃),加熱時間例如為0.5~60分鐘(較佳為1~50分鐘)左右。 The conditions of the heat treatment differ depending on the type of each component in the composition, the blending ratio, the coating film thickness, and the like, but the heating temperature is, for example, 60 to 150 ° C (preferably 70 to 140 ° C), and the heating time is, for example, 0.5~60 minutes (preferably 1~50 minutes).
正型感光性樹脂組成物層之膜厚,較佳為100nm~4.0μm、更佳為400nm~2.0μm之範圍。 The film thickness of the positive photosensitive resin composition layer is preferably in the range of 100 nm to 4.0 μm, more preferably 400 nm to 2.0 μm.
曝光步驟中,將上述正型感光性樹脂組成物層進行選擇性曝光。選擇性曝光,例如可經由所望之遮罩圖型進行。曝光所使用之波長,並未有特別限定,可使用KrF準分子雷射、ArF準分子雷射、F2準分子雷射、EUV(極紫外線)、VUV(真空紫外線)、EB(電子線)、X線、軟X線等輻射線進行。本發明之正型感光性樹脂組成物,特別是對於KrF準分子雷射有用。 In the exposure step, the positive photosensitive resin composition layer is selectively exposed. Selective exposure can be performed, for example, via a desired mask pattern. The wavelength used for the exposure is not particularly limited, and a KrF excimer laser, an ArF excimer laser, an F 2 excimer laser, an EUV (very ultraviolet ray), a VUV (vacuum ultraviolet ray), or an EB (electron line) can be used. , X-ray, soft X-ray and other radiation. The positive photosensitive resin composition of the present invention is particularly useful for KrF excimer lasers.
曝光後,適宜實施PEB處理(曝光後加熱處理)。PEB處理之條件係因組成物中之各成分的種類、調配比例、塗佈膜厚等而異,例如加熱溫度為60~150℃(較佳為70~140℃),加熱時間例如0.5~60分鐘(較佳為1~50 分鐘)左右。 After the exposure, PEB treatment (heat treatment after exposure) is suitably carried out. The conditions for the PEB treatment vary depending on the type of each component in the composition, the blending ratio, the coating film thickness, and the like, and the heating temperature is, for example, 60 to 150 ° C (preferably 70 to 140 ° C), and the heating time is, for example, 0.5 to 60. Minutes (preferably 1~50) Minutes).
顯影步驟中,將曝光後之上述正型感光性樹脂組成物層進行顯影。藉此,溶解及除去不要的部分。 In the developing step, the exposed positive photosensitive resin composition layer after exposure is developed. Thereby, the unnecessary portion is dissolved and removed.
顯影液可使用例如氫氧化鈉、氫氧化鉀、碳酸鈉、矽酸鈉、偏矽酸鈉、氨水、乙基胺、n-丙基胺、二乙基胺、二-n-丙基胺、三乙胺、甲基二乙基胺、二甲基乙醇胺、三乙醇胺、氫氧化四甲基銨、四乙基銨氫氧化物、吡咯、哌啶、1,8-二氮雜雙環[5.4.0]-7-十一碳烯、1,5-二氮雜雙環[4.3.0]-5-壬烷等之鹼類的水溶液。又,於上述鹼類的水溶液添加有適量之甲醇、乙醇等之水溶性有機溶劑或界面活性劑的水溶液也可作為顯影液使用。顯影液較佳為0.1~10質量%氫氧化四甲基銨水溶液。 As the developer, for example, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium citrate, sodium metasilicate, aqueous ammonia, ethylamine, n-propylamine, diethylamine, di-n-propylamine, Triethylamine, methyldiethylamine, dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, piperidine, 1,8-diazabicyclo[5.4. An aqueous solution of a base such as 7-undecene or 1,5-diazabicyclo[4.3.0]-5-nonane. Further, an aqueous solution in which an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant is added to the aqueous solution of the above-mentioned alkali can also be used as a developing solution. The developer is preferably an aqueous solution of 0.1 to 10% by mass of tetramethylammonium hydroxide.
顯影時間係因本發明之正型感光性樹脂組成物之組成或正型感光性樹脂組成物層的膜厚等而異,通常為1~30分鐘。顯影方法可為盛液法、浸漬法、攪拌法、噴霧顯影法等之任一。 The development time varies depending on the composition of the positive photosensitive resin composition of the present invention or the film thickness of the positive photosensitive resin composition layer, and is usually from 1 to 30 minutes. The developing method may be any one of a liquid-filling method, a dipping method, a stirring method, a spray developing method, and the like.
顯影後適宜地進行流水洗凈30~90秒,使用空氣槍或烤箱等使乾燥。 After development, it is suitably washed with running water for 30 to 90 seconds, and dried using an air gun or an oven.
加熱步驟中,將顯影後之上述正型感光性樹脂組成物層進行加熱。藉此,因上述正型感光性樹脂組成物層產生 熱變形,形成微透鏡圖型、較佳為凸面狀之微透鏡圖型。 In the heating step, the developed positive photosensitive resin composition layer after development is heated. Thereby, the positive photosensitive resin composition layer is produced Thermal deformation, forming a microlens pattern, preferably a convex microlens pattern.
加熱之條件係因組成物中之各成分之種類、調配比例、塗佈膜厚等而異,例如加熱溫度為130~170℃(較佳為140~160℃),加熱時間例如1~30分鐘(較佳為3~10分鐘)左右。 The heating conditions vary depending on the type of each component in the composition, the blending ratio, the coating film thickness, and the like. For example, the heating temperature is 130 to 170 ° C (preferably 140 to 160 ° C), and the heating time is, for example, 1 to 30 minutes. (preferably 3 to 10 minutes) or so.
本發明之微透鏡圖型之製造方法,其係包含以下步驟:使用本發明之正型感光性樹脂組成物,將正型感光性樹脂組成物層層合於透鏡材料層上之正型感光性樹脂組成物層層合步驟,將上述正型感光性樹脂組成物層選擇性曝光的曝光步驟,將曝光後之上述正型感光性樹脂組成物層進行顯影的顯影步驟,將顯影後之上述正型感光性樹脂組成物層進行加熱,形成具有微透鏡圖型之遮罩層的遮罩層形成步驟及乾蝕刻上述透鏡材料層及上述遮罩層,將上述微透鏡圖型的形狀轉印至上述透鏡材料層之形狀轉印步驟。 The method for producing a microlens pattern according to the present invention comprises the step of: positive-type photosensitive layer in which a positive photosensitive resin composition layer is laminated on a lens material layer using the positive photosensitive resin composition of the present invention. a resin composition layer laminating step, an exposure step of selectively exposing the positive photosensitive resin composition layer, and a developing step of developing the exposed positive photosensitive resin composition layer after exposure, and the above-described positive development after development The photosensitive resin composition layer is heated to form a mask layer forming step having a mask layer of a microlens pattern, dry etching the lens material layer and the mask layer, and transferring the shape of the microlens pattern to The shape transfer step of the above lens material layer.
正型感光性樹脂組成物層層合步驟中,使用本發明之正型感光性樹脂組成物,將正型感光性樹脂組成物層層合於透鏡材料層上。透鏡材料層可使用以往公知者,例如形成有圖像元件的矽晶圓等之基板上,僅設置透明平坦化膜或設置抗反射膜及透明平坦化膜,設置於此透明平坦化膜 上的透鏡材料層。 In the positive photosensitive resin composition layer laminating step, the positive photosensitive resin composition layer of the present invention is used to laminate a positive photosensitive resin composition layer on the lens material layer. The lens material layer can be used in a conventionally known substrate such as a germanium wafer on which an image element is formed, and only a transparent planarizing film or an antireflection film and a transparent planarizing film are provided, and the transparent planarizing film is provided. The layer of lens material on.
正型感光性樹脂組成物層層合步驟除了使用作為基材之透鏡材料層外,可與上述微透鏡圖型之製造方法中之正型感光性樹脂組成物層形成步驟同樣。 The positive photosensitive resin composition layer lamination step can be carried out in the same manner as the positive photosensitive resin composition layer forming step in the above-described manufacturing method of the microlens pattern, except that the lens material layer as the substrate is used.
曝光步驟中,將上述正型感光性樹脂組成物層進行選擇性曝光。曝光步驟係與上述微透鏡圖型之製造方法中之曝光步驟同樣。 In the exposure step, the positive photosensitive resin composition layer is selectively exposed. The exposure step is the same as the exposure step in the above-described manufacturing method of the microlens pattern.
顯影步驟中,將曝光後之上述正型感光性樹脂組成物層進行顯影。顯影步驟係與上述微透鏡圖型之製造方法中之顯影步驟同樣。 In the developing step, the exposed positive photosensitive resin composition layer after exposure is developed. The developing step is the same as the developing step in the above-described manufacturing method of the microlens pattern.
遮罩層形成步驟中,將顯影後之上述正型感光性樹脂組成物層進行加熱,形成具有微透鏡圖型之遮罩層。遮罩層形成步驟中,顯影後之上述正型感光性樹脂組成物層之加熱可與上述微透鏡圖型之製造方法中之加熱步驟同樣進行。遮罩層形成步驟中,形成之遮罩層所具有的微透鏡圖型係與藉由上述微透鏡圖型之製造方法所得之微透鏡圖型對應。 In the mask layer forming step, the developed positive photosensitive resin composition layer after development is heated to form a mask layer having a microlens pattern. In the mask layer forming step, the heating of the positive photosensitive resin composition layer after development can be performed in the same manner as the heating step in the above-described manufacturing method of the microlens pattern. In the mask layer forming step, the microlens pattern of the mask layer formed corresponds to the microlens pattern obtained by the above-described manufacturing method of the microlens pattern.
形狀轉印步驟中,乾蝕刻上述透鏡材料層及上述遮罩層,將上述微透鏡圖型之形狀轉印至上述透鏡材料層。藉此,可由上述透鏡材料層得到微透鏡。 In the shape transfer step, the lens material layer and the mask layer are dry-etched, and the shape of the microlens pattern is transferred to the lens material layer. Thereby, the microlens can be obtained from the above lens material layer.
乾蝕刻無特別限定,例如藉由電漿(氧、氬、CF4等)、電暈放電等之乾蝕刻。 The dry etching is not particularly limited, and is, for example, dry etching by plasma (oxygen, argon, CF 4 or the like), corona discharge, or the like.
以下藉由實施例詳細說明本發明,但是本發明不限定於此等之實施例者。 Hereinafter, the present invention will be described in detail by way of examples, but the invention is not limited thereto.
將如表1所示之(A)~(D)成分均勻溶解於有機溶劑(S)中,調製正型感光性樹脂組成物。表1中之括弧內之數值表示各成分之調配量(單位:質量份)。 The components (A) to (D) shown in Table 1 were uniformly dissolved in an organic solvent (S) to prepare a positive photosensitive resin composition. The numerical values in parentheses in Table 1 indicate the amount of each component (unit: parts by mass).
下述表示A-1~A-4之下述之各式中,各重複單位上附的文字(x、y、及z)為對於該樹脂所含有之全重複單位之各重複單位的比例(莫耳%)。 In the following various formulae showing A-1 to A-4, the characters (x, y, and z) attached to the respective repeating units are ratios of the respective repeating units of the total repeating unit contained in the resin ( Moer%).
A-1:下述式表示之樹脂(質量平均分子量20000、x=70、y=30) A-1: a resin represented by the following formula (mass average molecular weight: 20000, x=70, y=30)
A-1a:下述式表示之樹脂(質量平均分子量7000、x=70、y=30) A-1a: Resin represented by the following formula (mass average molecular weight 7000, x=70, y=30)
A-2:下述式表示之樹脂(質量平均分子量8000、x=75、y=25) A-2: a resin represented by the following formula (mass average molecular weight: 8,000, x=75, y=25)
A-3:下述式表示之樹脂(質量平均分子量20000、x=70、y=30) A-3: Resin represented by the following formula (mass average molecular weight: 20000, x=70, y=30)
A-4:下述式表示之樹脂(比較例、質量平均分 子量10000、x=65、y=25、z=10) A-4: Resin represented by the following formula (comparative example, mass average score Sub-quantity 10000, x=65, y=25, z=10)
B-1:下述式表示之化合物 B-1: a compound represented by the following formula
C-1:下述式表示之化合物 C-1: a compound represented by the following formula
C-2:下述式表示之化合物 C-2: a compound represented by the following formula
D-1:三乙胺 D-1: triethylamine
D-2:三乙醇胺 D-2: triethanolamine
S-1:丙二醇單甲基醚乙酸酯與乳酸乙酯之混合溶劑(質量比:6/4) S-1: mixed solvent of propylene glycol monomethyl ether acetate and ethyl lactate (mass ratio: 6/4)
於Si基板上形成有抗反射膜及丙烯酸系之透明平坦化膜的基板上,使用旋轉塗佈器,塗佈以實施例或比較例調製之正型感光性樹脂組成物,形成塗膜。對於上述塗膜,藉由於加熱板上,以100℃預烤處理90秒,使上述塗膜乾燥,形成膜厚800nm之正型感光性樹脂組成物層。 On the substrate on which the antireflection film and the acrylic transparent flattening film were formed on the Si substrate, a positive photosensitive resin composition prepared in the examples or the comparative examples was applied using a spin coater to form a coating film. The coating film was pre-baked at 100 ° C for 90 seconds on the hot plate to dry the coating film to form a positive photosensitive resin composition layer having a thickness of 800 nm.
接著,使用KrF曝光裝置NSR-S203B(Nikon製、NA=0.68、S=0.75),經由遮罩,將KrF準分子雷射(248nm)選擇性照射於上述正型感光性樹脂組成物層。 Next, a KrF excimer laser (248 nm) was selectively irradiated onto the positive photosensitive resin composition layer through a mask using a KrF exposure apparatus NSR-S203B (manufactured by Nikon, NA=0.68, S=0.75).
然後,對於上述正型感光性樹脂組成物層,以110℃進行90秒鐘PEB處理,接著,於23℃下,以2.38質量%氫氧化四甲基銨水溶液進行60秒鐘顯影後,使用純水進行30秒清洗。將純水甩乾進行乾燥,得到阻劑圖型。 Then, the positive-type photosensitive resin composition layer was subjected to PEB treatment at 110 ° C for 90 seconds, and then developed at 23 ° C for 2.3 seconds with a 2.38 mass % aqueous solution of tetramethylammonium hydroxide for 60 seconds. The water was washed for 30 seconds. The pure water is dried and dried to obtain a resist pattern.
所得之阻劑圖型的剖面使用SEM觀察。藉由變化遮罩尺寸,求臨界解像力,依據以下基準評價臨界解像力。結果如表2所示。 The cross section of the obtained resist pattern was observed using SEM. By varying the mask size, the critical resolution is sought and the critical resolution is evaluated according to the following criteria. The results are shown in Table 2.
◎(極良好):臨界解像力為0.17μm以下 ◎ (very good): the critical resolution is less than 0.17μm
○(良好):臨界解像力為超過0.17μm、0.18μm以下 ○ (good): The critical resolution is more than 0.17 μm and 0.18 μm or less.
△(不良):臨界解像力為超過0.18μm、0.19μm以下 △ (bad): the critical resolution is more than 0.18 μm and 0.19 μm or less
×(極不良):限界解像力為超過0.19μm × (very bad): the limit resolution is more than 0.19μm
與上述同樣,對於所得之阻劑圖型,由上方以SEM觀察。測量出現於各阻劑圖型之周圍的白色能帶之寬,依據以下基準評價。結果如表2所示。白色能帶係在底(bottom)部分之尺寸大於阻劑圖型之頂(top)部分之尺寸時被確認者。白色能帶之寬係頂部分與底部分之尺寸差,表示錐形狀的程度。白色能帶之寬越小,表示圖型之垂直性越高、越良好。 As in the above, the obtained resist pattern was observed by SEM from above. The width of the white energy band appearing around each resist pattern was measured and evaluated according to the following criteria. The results are shown in Table 2. The white band is confirmed when the size of the bottom portion is larger than the size of the top portion of the resist pattern. The width of the wide top portion and the bottom portion of the white energy band is different, indicating the degree of the tapered shape. The smaller the width of the white band, the higher the verticality of the pattern and the better.
◎(極良好):白色能帶之寬未達0.07μm ◎ (very good): the width of the white energy band is less than 0.07μm
○(良好):白色能帶之寬為0.07μm以上、未達0.075μm ○ (good): the width of the white energy band is 0.07 μm or more and less than 0.075 μm.
△(不良):白色能帶之寬為0.075μm以上、未達0.08μm △ (bad): the width of the white energy band is 0.075 μm or more and less than 0.08 μm.
×(極不良):白色能帶之寬為0.08μm以上 × (very bad): the width of the white energy band is 0.08 μm or more
與上述同樣,對於所得之阻劑圖型,以130~170℃之 各溫度,進行300秒鐘後烘烤處理,以SEM觀察阻劑圖型的剖面。求藉由上述後烘烤處理形成微透鏡圖型之最低溫度T1與相鄰之微透鏡圖型彼此之下底部分所接觸的最低溫度T2。將差T2-T1作為流動餘裕,依據以下基準評價。結果如表2所示。 Similarly to the above, the obtained resist pattern was subjected to post-baking treatment at a temperature of 130 to 170 ° C for 300 seconds, and the cross section of the resist pattern was observed by SEM. The lowest temperature T 1 at which the microlens pattern is formed by the post-baking process and the lowest temperature T 2 in contact with the lower portion of the adjacent microlens pattern are obtained. The difference T 2 -T 1 was taken as a flow margin and evaluated based on the following criteria. The results are shown in Table 2.
◎◎(極良好):流動餘裕為10℃以上 ◎ ◎ (very good): the flow margin is 10 ° C or more
◎(良好):流動餘裕為7℃以上、未達10℃ ◎ (good): the flow margin is above 7 ° C, less than 10 ° C
○(稍微良好):流動餘裕為4℃以上、未達7℃ ○ (slightly good): The flow margin is 4 ° C or more and less than 7 ° C
×(不良):流動餘裕為未達4℃ × (bad): the flow margin is less than 4 ° C
由表2可知,含有本發明之(A)成分及(B)成分之實施例1~7之組成物,具備優異之解像性及寬廣之流動餘裕之任一者。相對於此,不含有本發明之(A)成分及/或(B)成分之比較例1~3之組成物,其流動餘裕狹小。 As is clear from Table 2, the compositions of Examples 1 to 7 containing the components (A) and (B) of the present invention have excellent resolution and a wide flow margin. On the other hand, the composition of Comparative Examples 1 to 3 which does not contain the component (A) and/or the component (B) of the present invention has a small flow margin.
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