[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

TW201607659A - Laser processing device - Google Patents

Laser processing device Download PDF

Info

Publication number
TW201607659A
TW201607659A TW104121842A TW104121842A TW201607659A TW 201607659 A TW201607659 A TW 201607659A TW 104121842 A TW104121842 A TW 104121842A TW 104121842 A TW104121842 A TW 104121842A TW 201607659 A TW201607659 A TW 201607659A
Authority
TW
Taiwan
Prior art keywords
wavelength
laser beam
light
inspection light
workpiece
Prior art date
Application number
TW104121842A
Other languages
Chinese (zh)
Other versions
TWI660802B (en
Inventor
Keiji Nomaru
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of TW201607659A publication Critical patent/TW201607659A/en
Application granted granted Critical
Publication of TWI660802B publication Critical patent/TWI660802B/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Laser Beam Processing (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Dicing (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)

Abstract

The subject of the present invention is to provide a laser processing device capable of forming a laser-processed groove with a uniform depth without controlling the output of a laser beam. To solve the problem, the laser processing device comprises a processed object holding means for holding a processed object, and a laser beam irradiation means for irradiating a laser beam on the processed object held by the processed object holding means. The laser beam irradiation means is composed of a pulse laser beam oscillation means, a condenser for condensing the pulse laser beam, and a scanning mirror arranged between the pulse laser beam oscillation means and the condenser for scanning and guiding the pulse laser beam generated by the oscillation of the pulse laser beam oscillation means to the condenser. The laser processing device further comprises a processing depth detection means for detecting the processing depth of the processed objected held by the processed object holding means. The processing depth detection means includes: an inspection light source for emitting inspection light with a predetermined wavelength band toward the scanning mirror; a color difference lens arranged between the inspection light source and the scanning mirror for splitting light corresponding to the wavelength of the inspection light and slightly modifying the expansion angle of the inspection light according to the wavelength; a beam splitter arranged between the inspection light source and the color difference lens for diverting the reflection light of the inspection light irradiated onto the processed object to the reflection light detection path; a wavelength screening means arranged on the reflection light detection path for allowing the reflection light of the processed object with a wavelength consistent to the focal point to pass through the wavelength screening means; a wavelength detection means for detecting the wavelength of the reflection light passing through the wavelength screening means; and a control means for determining the processing depth of the processed object according to the wavelength detected by the wavelength detection means.

Description

雷射加工裝置 Laser processing device 發明領域 Field of invention

本發明是有關於一種對被保持在工作夾台上的半導體晶圓等被加工物施行雷射加工的雷射加工裝置。 The present invention relates to a laser processing apparatus that performs laser processing on a workpiece such as a semiconductor wafer held on a work chuck.

發明背景 Background of the invention

在半導體器件的製造步驟中,是在大致呈圓板狀的半導體晶圓的表面上藉由排列成格子狀之分割預定線劃分成複數個區域,並在此劃分的區域中形成IC、LSI等器件。並且,藉由沿著切割道(street)將半導體晶圓切斷,以將形成有器件的區域分割而製造一個個的半導體器件。 In the manufacturing process of the semiconductor device, a plurality of regions are divided by a predetermined dividing line arranged in a lattice shape on the surface of the substantially disk-shaped semiconductor wafer, and ICs, LSIs, and the like are formed in the divided regions. Device. Further, by dicing the semiconductor wafer along a street to divide the region in which the device is formed, individual semiconductor devices are fabricated.

近來,為了提升IC、LSI等半導體晶片的處理能力,在矽等基板的表面上藉由功能層來形成半導體器件之形態的半導體晶圓正被實用化,該功能層是將由SiOF、BSG(SiOB)等之無機物類的膜,或是聚醯亞胺類、聚對二甲苯(parylene)類等聚合物膜之有機物類的膜所構成之低介電常數絕緣體被覆膜(Low-k膜)積層而成。 Recently, in order to improve the processing capability of semiconductor wafers such as ICs and LSIs, semiconductor wafers in the form of semiconductor devices formed by functional layers on the surface of germanium substrates are being put into practical use. The functional layers will be composed of SiOF, BSG (SiOB). a film of an inorganic substance, or a film of a low dielectric constant insulator (Low-k film) composed of a film of an organic substance such as a polymer film such as a polyimine or a parylene. Laminated.

沿著這種半導體晶圓的切割道所進行的分割,通常是以稱為切割機(dicer)的切削裝置來進行。此切削裝置具備有保持作為被加工物之半導體晶圓的工作夾台、用於切 削保持於該工作夾台上之半導體晶圓的切削手段、以及使工作夾台與切削手段相對地移動之移動手段。切削手段包含有使其高速旋轉之旋轉主軸與裝設在該主軸上的切削刀。切削刀是由圓盤狀之基台與裝設在該基台的側面外周部的環狀切割刃所構成,切割刃是藉由電鑄將例如粒徑3μm左右的鑽石磨粒加以固定而形成。 The segmentation along the dicing streets of such semiconductor wafers is typically performed in a cutting device called a dicer. The cutting device is provided with a working chuck for holding a semiconductor wafer as a workpiece, and is used for cutting A cutting means for cutting a semiconductor wafer held on the working chuck, and a moving means for moving the working chuck and the cutting means. The cutting means includes a rotary spindle that rotates at a high speed and a cutter that is mounted on the spindle. The cutting blade is composed of a disk-shaped base and an annular cutting edge attached to the outer peripheral portion of the side surface of the base. The cutting edge is formed by fixing, for example, diamond abrasive grains having a particle diameter of about 3 μm by electroforming. .

然而,上述Low-k膜要以切削刀來切削是有困難的。亦即,由於Low-k膜是如同雲母一般非常地脆,當以切削刀沿著分割預定線進行切削時,就會有Low-k膜剝離、且其剝離甚至到達電路而對器件造成致命性的損傷之問題。 However, it is difficult to cut the above Low-k film with a cutter. That is, since the Low-k film is very brittle like mica, when the cutting is performed along the dividing line by the cutting blade, the Low-k film peels off, and the peeling or even reaching the circuit causes fatality to the device. The problem of damage.

又,在配置有用於測試在分割預定線上的功能層中的器件功能之稱為測試元件群組(Test Element Group,TEG)的測試用金屬膜的半導體晶圓中,會有下列問題:當以切削刀切削後會產生毛邊而使器件的品質降低,並且必須頻繁地實施切削刀的修整(dressing)而使生產性降低。 Further, in a semiconductor wafer in which a test metal film called a test element group (TEG) for testing a device function in a functional layer on a division predetermined line is disposed, there is the following problem: When the cutter is cut, burrs are generated to deteriorate the quality of the device, and the dressing of the cutter must be frequently performed to reduce the productivity.

為了解決上述問題,在下述專利文獻1中已揭示有一種晶圓的分割方法,該切割方法為:沿著形成於半導體晶圓的分割預定線照射雷射光線,藉此在由Low-k膜所形成的積層體上形成雷射加工溝以將功能層分斷,並藉由將切削刀定位在已將此功能層分斷的雷射加工溝上來將切削刀和半導體晶圓相對移動,以將半導體晶圓沿著分割預定線切斷。 In order to solve the above problem, a method of dividing a wafer by irradiating laser light along a predetermined dividing line formed on a semiconductor wafer by the Low-k film is disclosed in Patent Document 1 listed below. Forming a laser processing groove on the formed laminated body to break the functional layer, and relatively moving the cutting blade and the semiconductor wafer by positioning the cutting tool on the laser processing groove that has broken the functional layer The semiconductor wafer is cut along a predetermined dividing line.

然而,在配置有用於測試在分割預定線上的功能層中的器件功能之稱為測試元件群組(TEG)的測試用金屬 膜的半導體晶圓中,會有無法沿著分割預定線形成均一的深度的雷射加工溝之問題。為了解決此問題,在下述專利文獻2中已揭示有下列技術:檢測配置有測試用之金屬膜的區域來製作並儲存座標,並根據所儲存的座標一邊調整雷射光線的輸出一邊沿著分割預定線照射雷射光線。 However, a test metal called a test element group (TEG) is provided with a device function for testing a function layer in a division line. In a semiconductor wafer of a film, there is a problem that a laser processing groove having a uniform depth cannot be formed along a predetermined dividing line. In order to solve this problem, Patent Document 2 listed below discloses a technique of detecting a region in which a metal film for testing is disposed to fabricate and store coordinates, and adjusting the output of the laser light while dividing along the stored coordinates. The predetermined line illuminates the laser light.

先前技術文獻 Prior technical literature 專利文獻 Patent literature

專利文獻1:日本專利特開2005-64231號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2005-64231

專利文獻2:日本專利特開2005-118832號公報 Patent Document 2: Japanese Patent Laid-Open Publication No. 2005-118832

發明概要 Summary of invention

但是,要像上述專利文獻2中所揭示的技術一樣檢測配置有測試用金屬膜的區域以製作座標,會有需要許多時間而使生產性變差的問題,並且要根據座標適時地控制座標雷射光線的輸出也未必容易。 However, it is necessary to detect the area in which the metal film for test is disposed to form a coordinate like the technique disclosed in the above-mentioned Patent Document 2, which may require a lot of time to deteriorate the productivity, and the coordinates of the coordinate are controlled in accordance with the coordinates. The output of the light is not necessarily easy.

本發明是有鑒於上述事實而作成的發明,其主要技術課題為提供一種可以在不控制雷射光線的輸出的情形下形成均一的深度的雷射加工溝之雷射加工裝置。 The present invention has been made in view of the above circumstances, and a main technical object thereof is to provide a laser processing apparatus capable of forming a laser processing groove of uniform depth without controlling the output of laser light.

為了解決上述主要的技術課題,依據本發明所提供的雷射加工裝置,是具備保持被加工物之被加工物保持手段、和將雷射光線照射在該被加工物保持手段所保持的被加工物上的雷射光線照射手段之雷射加工裝置,其特徵 在於,該雷射光線照射手段是由下列所構成:脈衝雷射光線振盪手段,振盪產生脈衝雷射光線;聚光器,將從該脈衝雷射光線振盪手段所振盪產生的脈衝雷射光線聚光並照射在該被加工物保持手段所保持的被加工物上;以及掃瞄鏡,配置在該脈衝雷射光線振盪手段與該聚光器之間,將從該脈衝雷射光線振盪手段所振盪產生的脈衝雷射光線掃瞄而導引至該聚光器,且具備有檢測該被加工物保持手段所保持的被加工物的加工深度之加工深度檢測手段,該加工深度檢測手段是由下列所構成:檢查光源,朝向該掃瞄鏡發射具有預定的波長頻帶的檢查光;色差透鏡,配置在該檢查光源與該掃瞄鏡之間,並對應檢查光的波長而分光,且按每個波長將檢查光的擴張角稍微變更;光束分離器(beam splitter),配置在該檢查光源與該色差透鏡之間,將從該檢查光源發出而透過該掃瞄鏡及該聚光器照射在該被加工物保持手段所保持的被加工物上的檢查光之反射光分歧到反射光檢測路徑上;波長篩選手段,配置在該反射光檢測路徑上,使在反射光的波長頻帶中可使被加工物與焦點一致的波長之檢查光的反射光通過; 波長檢測手段,檢測已通過該波長篩選手段之檢查光的反射光之波長;以及控制手段,根據由該波長檢測手段所檢測出的波長求出該被加工物保持手段所保持之被加工物的加工深度。 In order to solve the above-mentioned main technical problems, the laser processing apparatus according to the present invention is provided with means for holding a workpiece to hold a workpiece, and processing to be held by the workpiece holding means by irradiating laser light. Laser processing device for laser light irradiation on an object The laser light irradiation means is composed of: a pulsed laser ray oscillating means for oscillating to generate pulsed laser light; and a concentrator for concentrating the pulsed laser light oscillated from the pulsed laser oscillating means Light is incident on the workpiece held by the workpiece holding means; and a scanning mirror is disposed between the pulsed laser ray oscillating means and the concentrator, and the laser light oscillating means The pulsed laser light generated by the oscillation is scanned and guided to the concentrator, and is provided with a processing depth detecting means for detecting the processing depth of the workpiece held by the workpiece holding means, and the processing depth detecting means is The following is configured to: inspect the light source, and emit inspection light having a predetermined wavelength band toward the scanning mirror; the color difference lens is disposed between the inspection light source and the scanning mirror, and is divided according to the wavelength of the inspection light, and is divided into The wavelengths of the inspection light are slightly changed; a beam splitter is disposed between the inspection light source and the color difference lens, and is emitted from the inspection light source. The scanning mirror and the illuminator illuminate the reflected light of the inspection light irradiated on the workpiece held by the workpiece holding means to the reflected light detecting path; and the wavelength screening means is disposed in the reflected light detecting path And passing the reflected light of the inspection light of a wavelength at which the processed object and the focus coincide with each other in the wavelength band of the reflected light; The wavelength detecting means detects the wavelength of the reflected light of the inspection light that has passed through the wavelength screening means, and the control means determines the workpiece to be processed by the workpiece holding means based on the wavelength detected by the wavelength detecting means Processing depth.

本發明的雷射加工裝置是如上所述地被構成,由於可以一邊作動雷射光線照射手段而將雷射光線照射在被加工物保持手段所保持的被加工物上一邊以加工深度檢測手段檢測所加工的雷射加工溝的深度,且一旦雷射加工溝達到預定的厚度後即停止朝向被加工物的雷射光線的照射,因此即使被加工物上存在有不同種類的材料,也可以在不控制雷射光線的輸出的情形下形成均一的深度的雷射加工溝。因此,由於沒必要檢測不同種類的材料存在之區域來製作座標,所以能夠提升生產性。 The laser processing apparatus of the present invention is configured as described above, and is capable of detecting the laser beam irradiation means while irradiating the laser beam to the workpiece held by the workpiece holding means while detecting the processing depth by means of the processing depth detecting means. The depth of the processed laser processing groove, and once the laser processing groove reaches a predetermined thickness, the irradiation of the laser light toward the workpiece is stopped, so even if different materials are present on the workpiece, A uniform depth laser processing trench is formed without controlling the output of the laser light. Therefore, since it is not necessary to detect the regions in which different kinds of materials exist to make coordinates, productivity can be improved.

10‧‧‧半導體晶圓 10‧‧‧Semiconductor wafer

110‧‧‧基板 110‧‧‧Substrate

110a‧‧‧表面 110a‧‧‧ surface

110b‧‧‧下表面 110b‧‧‧ lower surface

120‧‧‧功能層 120‧‧‧ functional layer

120a‧‧‧表面 120a‧‧‧Surface

121‧‧‧分割預定線 121‧‧‧Division line

122‧‧‧器件 122‧‧‧Device

123‧‧‧金屬膜 123‧‧‧Metal film

130‧‧‧雷射加工溝 130‧‧‧Laser processing ditch

2‧‧‧靜止基台 2‧‧‧Standing abutment

3‧‧‧工作夾台機構 3‧‧‧Working table mechanism

31、322‧‧‧導軌 31, 322‧‧‧ rails

32‧‧‧第1滑塊 32‧‧‧1st slider

321、331‧‧‧被導引溝 321,331‧‧‧guided ditch

33‧‧‧第2滑塊 33‧‧‧2nd slider

34‧‧‧圓筒構件 34‧‧‧Cylinder components

35‧‧‧支撐台 35‧‧‧Support table

36‧‧‧工作夾台 36‧‧‧Working table

361‧‧‧吸附夾頭 361‧‧‧Adsorption chuck

362‧‧‧夾具 362‧‧‧ fixture

37‧‧‧加工進給手段 37‧‧‧Processing means of feeding

371、381‧‧‧公螺桿 371, 381‧‧‧ male screw

372、382‧‧‧脈衝馬達 372, 382‧‧ ‧ pulse motor

373、383‧‧‧軸承塊 373, 383‧ ‧ bearing blocks

38‧‧‧分度進給手段 38‧‧‧Dividing means of feeding

4‧‧‧雷射光線照射單元 4‧‧‧Laser light irradiation unit

41‧‧‧支撐構件 41‧‧‧Support members

42‧‧‧套殼 42‧‧‧shells

5‧‧‧雷射光線照射手段 5‧‧‧Laser light exposure

51‧‧‧脈衝雷射光線振盪手段 51‧‧‧Pulse laser oscillating means

511‧‧‧脈衝雷射光線振盪器 511‧‧‧pulse laser ray oscillator

512‧‧‧重複頻率設定手段 512‧‧‧Repetition frequency setting means

52‧‧‧聚光器 52‧‧‧ concentrator

521‧‧‧fθ透鏡 521‧‧‧fθ lens

53‧‧‧掃瞄鏡 53‧‧‧Scan mirror

530‧‧‧掃瞄馬達 530‧‧‧Scan motor

53a‧‧‧箭頭 53a‧‧‧arrow

54‧‧‧光軸變更手段 54‧‧‧ Optical axis change means

55‧‧‧雷射光線吸收手段 55‧‧‧Laser light absorption means

6‧‧‧攝像手段 6‧‧‧Photography

7‧‧‧加工深度檢測手段 7‧‧‧Processing depth detection means

71‧‧‧檢查光源 71‧‧‧Check the light source

72‧‧‧色差透鏡 72‧‧‧chromatic aberration lens

73‧‧‧反射光檢測路徑 73‧‧‧ Reflected light detection path

74‧‧‧光束分離器 74‧‧‧beam splitter

75‧‧‧波長篩選手段 75‧‧‧ Wavelength screening

751‧‧‧聚光透鏡 751‧‧‧ Concentrating lens

752‧‧‧針孔遮罩 752‧‧‧ pinhole mask

752a‧‧‧針孔 752a‧‧‧ pinhole

753‧‧‧準直透鏡 753‧‧‧ Collimating lens

76‧‧‧波長檢測手段 76‧‧‧ Wavelength detection means

761‧‧‧繞射光柵 761‧‧‧diffraction grating

762‧‧‧聚光透鏡 762‧‧‧ concentrating lens

763‧‧‧線型影像感測器 763‧‧‧Line image sensor

8‧‧‧控制手段 8‧‧‧Control means

81‧‧‧中央處理裝置(CPU) 81‧‧‧Central Processing Unit (CPU)

82‧‧‧唯讀記憶體(ROM) 82‧‧‧Read-only memory (ROM)

83‧‧‧隨機存取記憶體(RAM) 83‧‧‧ Random Access Memory (RAM)

84‧‧‧輸入介面 84‧‧‧Input interface

85‧‧‧輸出介面 85‧‧‧Output interface

F‧‧‧環狀的框架 F‧‧‧Ringed frame

LB、LB1、LBn‧‧‧脈衝雷射光線 LB, LB1, LBn‧‧‧ pulsed laser light

T‧‧‧切割膠帶 T‧‧‧ cutting tape

W‧‧‧被加工物 W‧‧‧Processed objects

X、X1、Y、Z‧‧‧方向 X, X1, Y, Z‧‧‧ directions

P1、P2‧‧‧聚光點 P1, P2‧‧‧ spotlights

圖1是依照本發明所構成的雷射加工裝置之立體圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a perspective view of a laser processing apparatus constructed in accordance with the present invention.

圖2是裝備於圖1所示之雷射加工裝置上的雷射光線照射手段及加工深度檢測手段之方塊構成圖。 Fig. 2 is a block diagram showing the arrangement of a laser beam irradiation means and a processing depth detecting means provided in the laser processing apparatus shown in Fig. 1.

圖3是顯示圖2所示之加工深度檢測手段的檢查光之各波長的聚光點之說明圖。 Fig. 3 is an explanatory view showing a light collecting point of each wavelength of the inspection light of the processing depth detecting means shown in Fig. 2;

圖4是裝備於圖1所示之雷射加工裝置上的控制手段之方塊構成圖。 Figure 4 is a block diagram showing the control means provided on the laser processing apparatus shown in Figure 1.

圖5是顯示檢查光的波長(nm)與加工深度(μm)的關係 之控制圖。 Figure 5 is a graph showing the relationship between the wavelength (nm) of the inspection light and the processing depth (μm). Control chart.

圖6(a)、(b)是作為被加工物的半導體晶圓之立體圖及主要部位放大剖面圖。 6(a) and 6(b) are a perspective view and a cross-sectional view of a main portion of a semiconductor wafer as a workpiece.

圖7是顯示將圖6所示之將半導體晶圓貼附於已裝設在環狀框架上的切割膠帶之表面上的狀態之立體圖。 Fig. 7 is a perspective view showing a state in which the semiconductor wafer shown in Fig. 6 is attached to the surface of the dicing tape which has been mounted on the annular frame.

圖8(a)~(c)是以圖1所示之雷射加工裝置實施的雷射加工溝形成步驟與進給步驟之說明圖。 8(a) to 8(c) are explanatory views showing a laser processing groove forming step and a feeding step performed by the laser processing apparatus shown in Fig. 1.

用以實施發明之形態 Form for implementing the invention

以下,將參照附加之圖式,針對依照本發明而構成之雷射加工裝置的較佳實施形態,作更詳細的說明。 Hereinafter, preferred embodiments of the laser processing apparatus constructed in accordance with the present invention will be described in more detail with reference to the accompanying drawings.

圖1中所示為依照本發明而構成之雷射加工裝置的立體圖。圖1所示的加工裝置具備有靜止基台2、配置成可在該靜止基台2上於以箭頭X所示的加工進給方向(X軸方向)上移動且保持被加工物的工作夾台機構3、以及配置於基台2上之作為雷射光線照射手段之雷射光線照射單元4。 A perspective view of a laser processing apparatus constructed in accordance with the present invention is shown in FIG. The processing apparatus shown in Fig. 1 is provided with a stationary base 2, a working clamp that is arranged to be movable on the stationary base 2 in a machining feed direction (X-axis direction) indicated by an arrow X and to hold a workpiece. The stage mechanism 3 and the laser beam irradiation unit 4 which is disposed on the base 2 as a laser beam irradiation means.

上述工作夾台機構3具備有在靜止基台2上沿著X軸方向平行地配置的一對導軌31、31、配置成可在該導軌31、31上於X軸方向上移動的第1滑塊32、配置成可在該第1滑塊32上於與加工進給方向(X軸方向)垂直之以箭頭Y所示的分度進給方向(Y軸方向)上移動的第2滑塊33、藉由圓筒構件34而被支撐在該第2滑塊33上的支撐台35、和作為被加工物保持手段的工作夾台36。此工作夾台36具備有由多孔性材料所形成的吸附夾頭361,並形成為可藉由圖未示之吸 引手段將成為被加工物之例如圓形之半導體晶圓保持在為吸附夾頭361之上表面的保持面上。如此所構成的工作夾台36是藉由配置於圓筒構件34內的圖未示的脈衝馬達而使其旋轉。再者,工作夾台36上配置有用於固定環狀框架之夾具362,該環狀框架是透過保護膠帶支撐半導體晶圓等被加工物。 The above-described work clamping mechanism 3 includes a pair of guide rails 31 and 31 which are arranged in parallel along the X-axis direction on the stationary base 2, and a first slide which is arranged to be movable in the X-axis direction on the guide rails 31 and 31. The block 32 is disposed so as to be movable on the first slider 32 in the index feeding direction (Y-axis direction) indicated by the arrow Y perpendicular to the machining feed direction (X-axis direction). 33. A support base 35 supported by the second slider 33 by the cylindrical member 34, and a work chuck 36 as a workpiece holding means. The working clamping table 36 is provided with an adsorption chuck 361 formed of a porous material, and is formed to be sucked by a drawing. The guiding means holds the semiconductor wafer, which is a workpiece, for example, in a circular holding surface on the upper surface of the chucking chuck 361. The work chuck 36 configured as described above is rotated by a pulse motor (not shown) disposed in the cylindrical member 34. Further, a clamp 362 for fixing an annular frame is disposed on the work chuck 36, and the annular frame supports a workpiece such as a semiconductor wafer through a protective tape.

上述第1滑塊32,於其下表面設有與上述一對導軌31、31嵌合的一對被導引溝321、321,並且於其上表面設有沿著Y軸方向平行地形成的一對導軌322、322。像這樣所構成之第1滑動塊32是構成為:藉由將被導引溝321、321嵌合於一對導軌31、31上,而可沿著一對導軌31、31在X軸方向上移動。圖示之實施形態中的工作夾台機構3具備有用以使第1滑塊32沿著一對導軌31、31在X軸方向上移動的加工進給手段37。加工進給手段37包含有在上述一對導軌31和31之間平行地配置的公螺桿371,和用於旋轉驅動該公螺桿371之脈衝馬達372等驅動源。公螺桿371,其一端受到固定於上述靜止基台2之軸承塊373支撐成旋轉自如,其另一端則被上述脈衝馬達372的輸出軸傳動連結。再者,是將公螺桿371螺合於突出於第1滑塊32之中央部下表面而設置之圖未示的母螺塊所形成之貫通螺孔中。因此,透過以脈衝馬達372正轉以及逆轉驅動公螺桿371,就能使第1滑動塊32沿著導軌31、31在X軸方向上移動。 The first slider 32 is provided with a pair of guided grooves 321 and 321 fitted to the pair of guide rails 31 and 31 on the lower surface thereof, and is formed on the upper surface thereof in parallel along the Y-axis direction. A pair of guide rails 322, 322. The first slide block 32 configured as described above is configured to be fitted to the pair of guide rails 31 and 31 by the guide grooves 321 and 321 so as to be along the X-axis direction along the pair of guide rails 31 and 31. mobile. The work clamping mechanism 3 in the illustrated embodiment includes a machining feed means 37 for moving the first slider 32 in the X-axis direction along the pair of rails 31, 31. The machining feed means 37 includes a male screw 371 disposed in parallel between the pair of guide rails 31 and 31, and a drive source such as a pulse motor 372 for rotationally driving the male screw 371. The male screw 371 is rotatably supported at one end by a bearing block 373 fixed to the stationary base 2, and the other end thereof is driven and coupled by an output shaft of the pulse motor 372. Further, the male screw 371 is screwed into a through screw hole formed by a female nut (not shown) which is provided so as to protrude from the lower surface of the central portion of the first slider 32. Therefore, the first slider block 32 can be moved in the X-axis direction along the guide rails 31 and 31 by the forward rotation of the pulse motor 372 and the reverse rotation of the male screw 371.

上述第2滑塊33是構成為:在其下表面設置有可與設置在上述第1滑塊32之上表面的一對導軌322、322嵌合 的一對被導引溝331、331,並藉由將此被導引溝331、331嵌合於一對導軌322、322,而可在Y軸方向上移動。圖示的實施形態中的工作夾台機構3具備有用於使第2滑塊33沿著裝設在第1滑塊32上的一對導軌322、322在Y軸方向上移動的分度進給手段38。分度進給手段38包含有在上述一對導軌322和322之間平行地配置的公螺桿381,和用於旋轉驅動該公螺桿381的脈衝馬達382等的驅動源。公螺桿381,其一端受到固定於上述第1滑塊32之上表面的軸承塊383支撐成旋轉自如,其另一端則被上述脈衝馬達382的輸出軸傳動連結。再者,是將公螺桿381螺合於突出於第2滑塊33之中央部下表面而設置之圖未示的母螺塊所形成之貫通螺孔中。因此,透過以脈衝馬達382正轉及逆轉驅動公螺桿381,就能使第2滑塊33沿著導軌322、322在Y軸方向上移動。 The second slider 33 is configured to be fitted to a pair of guide rails 322 and 322 provided on the upper surface of the first slider 32 on the lower surface thereof. The pair of guided grooves 331 and 331 are movable in the Y-axis direction by fitting the guided grooves 331 and 331 to the pair of guide rails 322 and 322. The work clamping mechanism 3 in the illustrated embodiment includes an index feeding means for moving the second slider 33 along the pair of guide rails 322 and 322 attached to the first slider 32 in the Y-axis direction. 38. The index feeding means 38 includes a male screw 381 which is disposed in parallel between the pair of guide rails 322 and 322, and a drive source for a pulse motor 382 or the like for rotationally driving the male screw 381. The male screw 381 has one end supported by a bearing block 383 fixed to the upper surface of the first slider 32 so as to be rotatable, and the other end of which is rotatably coupled to the output shaft of the pulse motor 382. Further, the male screw 381 is screwed into a through screw hole formed by a female nut (not shown) which is provided so as to protrude from the lower surface of the central portion of the second slider 33. Therefore, by driving the male screw 381 by the forward rotation and the reverse rotation of the pulse motor 382, the second slider 33 can be moved in the Y-axis direction along the guide rails 322 and 322.

上述雷射光線照射單元4具備有配置於上述基台2上的支撐構件41、被該支撐構件41所支撐且實質上水平延伸的套殼42、配置於該套殼42之雷射光線照射手段5、及配置於套殼42的前端部且可檢測用來雷射加工之加工區域的攝像手段6。再者,攝像手段6設有照明被加工物的照明手段、捕捉以該照明手段所照明之區域的光學系統、以及拍攝以該光學系統所捕捉到之影像的攝像元件(CCD)等,並可將所拍攝到的影像訊號傳送至後述之控制手段。 The laser beam irradiation unit 4 includes a support member 41 disposed on the base 2, a casing 42 supported by the support member 41 and extending substantially horizontally, and a laser beam irradiation means disposed in the casing 42. 5. An image pickup means 6 disposed at a front end portion of the casing 42 and capable of detecting a processing area for laser processing. Further, the imaging means 6 is provided with an illumination means for illuminating the workpiece, an optical system for capturing a region illuminated by the illumination means, and an imaging element (CCD) for capturing an image captured by the optical system, and the like. The captured image signal is transmitted to a control means described later.

參照圖2來說明上述的雷射光線照射手段5。 The above-described laser beam irradiation means 5 will be described with reference to Fig. 2 .

雷射光線照射手段5是由下列所構成:脈衝雷射光線振盪手段51、將從該脈衝雷射光線振盪手段51所振盪產生的 脈衝雷射光線聚光而照射在工作夾台36所保持的被加工物W上的聚光器52、以及配置在脈衝雷射光線振盪手段51與聚光器52之間並將從脈衝雷射光線振盪手段51所振盪產生的雷射光線掃瞄而導引至聚光器52的掃瞄鏡53。脈衝雷射光線震盪手段51是由脈衝雷射光線振盪器511與附設在其上之重複頻率設定手段512所構成。再者,脈衝雷射光線振盪手段51的脈衝雷射光線振盪器511在圖示的實施狀態中,會振盪產生波長為355nm的脈衝雷射光線LB。上述聚光器52具備有將從上述脈衝雷射光線振盪手段51所振盪產生的脈衝雷射光線LB聚光的fθ透鏡521。再者,聚光器52是形成為藉由圖未示的聚光點位置調整手段而使其可在相對於工作夾台36的保持面為垂直的聚光點位置調整方向(圖1中以箭頭Z所示的Z軸方向)上移動。 The laser beam irradiation means 5 is composed of a pulsed laser beam oscillating means 51 for collecting the pulsed laser beam oscillated from the pulsed laser beam oscillating means 51 and illuminating the lens holder 36. The concentrator 52 on the workpiece W and the laser light arranged between the pulsed laser ray oscillating means 51 and the concentrator 52 and oscillated from the pulsed laser ray oscillating means 51 are scanned and guided. To the scanning mirror 53 of the concentrator 52. The pulsed laser ray oscillating means 51 is constituted by a pulsed laser ray oscillator 511 and a repetition frequency setting means 512 attached thereto. Further, in the illustrated embodiment, the pulsed laser beam 511 of the pulsed laser beam oscillating means 51 oscillates to generate a pulsed laser beam LB having a wavelength of 355 nm. The concentrator 52 is provided with an f θ lens 521 that condenses the pulsed laser beam LB oscillated by the pulsed laser ray oscillation means 51. Furthermore, the concentrator 52 is formed so as to be adjustable in the direction of the condensing point position perpendicular to the holding surface of the working gantry 36 by the condensing point position adjusting means (not shown) (in FIG. 1 Moves in the Z-axis direction indicated by the arrow Z).

上述掃瞄鏡53在圖示的實施形態中是由多面鏡所構成的,藉由以掃瞄馬達530在圖2中朝以箭頭53a表示的方向旋轉,以將從脈衝雷射光線振盪手段51所振盪產生的脈衝雷射光線LB在LB1至LBn的範圍內沿著X軸方向導引至fθ透鏡521。再者,也可以將電流鏡(galvano-mirror)作為掃瞄鏡53來使用。又,藉由上述fθ透鏡521所聚光的脈衝雷射光線LB1至LBn的範圍,在圖示的實施形態中雖是誇大而畫出,但可設定為例如2mm。 In the illustrated embodiment, the scanning mirror 53 is constituted by a polygon mirror, and is rotated by a scanning motor 530 in a direction indicated by an arrow 53a in FIG. The pulsed laser beam LB generated by the oscillation is guided to the f θ lens 521 along the X-axis direction within the range of LB1 to LBn. Further, a current mirror (galvano-mirror) may be used as the scanning mirror 53. Further, the range of the pulsed laser beams LB1 to LBn condensed by the f θ lens 521 is drawn in an exaggerated manner in the illustrated embodiment, but may be set to, for example, 2 mm.

圖示的實施形態中的雷射光線照射手段5具備有配置在脈衝雷射光線振盪手段51與掃瞄鏡53之間,將從脈衝雷射光線振盪手段51所振盪產生的脈衝雷射光線LB的光 軸偏向之光軸變更手段54。在圖示的實施形態中,此光軸變更手段54是由聲光元件(AOD)所構成,且在被施加了預定頻率的RF(radio frequency)時,會如圖2中以虛線所示地將脈衝雷射光線LB的光軸朝向雷射光線吸收手段55變更。 The laser beam irradiation means 5 in the illustrated embodiment includes a pulsed laser beam LB which is disposed between the pulsed laser beam oscillating means 51 and the scanning mirror 53, and is oscillated from the pulsed laser ray oscillating means 51. Light The optical axis changing means 54 for the axis deviation. In the illustrated embodiment, the optical axis changing means 54 is constituted by an acousto-optic element (AOD), and when RF (radio frequency) of a predetermined frequency is applied, it is indicated by a broken line in FIG. The optical axis of the pulsed laser beam LB is changed toward the laser beam absorbing means 55.

像以上所述地被構成的雷射光線照射手段5的脈衝雷射光線振盪手段51與掃瞄鏡53的掃瞄馬達530以及光軸變更手段54是被後述的控制手段所控制。 The pulsed laser beam oscillating means 51 of the laser beam irradiation means 5 configured as described above and the scan motor 530 and the optical axis changing means 54 of the scanning mirror 53 are controlled by a control means to be described later.

參照圖2繼續說明,圖示的實施形態中的雷射加工裝置具備有檢測作為被加工物保持手段的工作夾台36所保持之被加工物W的加工深度之加工深度檢測手段7。加工深度檢測手段7具備有檢查光源71、色差透鏡72、光束分離器74、波長篩選手段75及波長檢測手段76。該檢查光源71會朝向上述雷射光線照射手段5的掃瞄鏡53發射具有預定的波長頻帶的檢查光。該色差透鏡72是配置在檢查光源71與掃瞄鏡53之間,並對應檢查光的波長而分光,並按每個波長將檢查光的擴張角度稍微變更。該光束分離器74是配置在檢查光源71與色差透鏡72之間,將從檢查光源71發出而透過掃瞄鏡53以及聚光器52的fθ透鏡521照射在工作夾台36所保持的被加工物W上的檢查光之反射光分歧到反射光檢測路徑73上。該波長篩選手段75是配置在反射光檢測路徑73上,使在反射光的波長頻帶中可使焦點與被加工物一致的波長之檢查光的反射光通過。該波長檢測手段76是檢測已通過該波長篩選手段75之檢查光的反射光之波長。 Referring to Fig. 2, the laser processing apparatus according to the illustrated embodiment includes a machining depth detecting means 7 for detecting the machining depth of the workpiece W held by the work chuck 36 as the workpiece holding means. The machining depth detecting means 7 includes an inspection light source 71, a chromatic aberration lens 72, a beam splitter 74, a wavelength screening means 75, and a wavelength detecting means 76. The inspection light source 71 emits inspection light having a predetermined wavelength band toward the scanning mirror 53 of the above-described laser beam irradiation means 5. The color difference lens 72 is disposed between the inspection light source 71 and the scanning mirror 53, and is split according to the wavelength of the inspection light, and slightly changes the expansion angle of the inspection light for each wavelength. The beam splitter 74 is disposed between the inspection light source 71 and the chromatic aberration lens 72, and the f θ lens 521 emitted from the inspection light source 71 and transmitted through the scanning mirror 53 and the concentrator 52 is irradiated to the keeper held by the operation gantry 36. The reflected light of the inspection light on the workpiece W is branched onto the reflected light detecting path 73. The wavelength selection means 75 is disposed on the reflected light detection path 73 so that the reflected light of the inspection light of the wavelength at which the focus can be aligned with the workpiece in the wavelength band of the reflected light passes. The wavelength detecting means 76 is a wavelength for detecting the reflected light of the inspection light having passed through the wavelength screening means 75.

檢查光源71是由超輻射發光二極體 (superluminescent diode,SLD)或閃光燈泡所構成,在圖示的實施形態中具有800~900nm的波長頻帶。色差透鏡72會將檢查光源71所發出之具有800~900nm的波長頻帶之檢查光對應波長而分光以將檢查光的擴張角度按每個波長稍微變更而導引至掃瞄鏡53。因此,在掃瞄鏡53上反射並被導引至fθ透鏡521的具有800~900nm之波長頻帶的檢查光會形成如圖3所示地將800nm的光聚光於P1,並將波長為900nm的光聚光於P2。再者,在圖示之實施形態中,是設定成波長為800nm的聚光點P1與波長為900nm的聚光點P2的間隔為50μm。因此,在圖示的實施形態中會製作圖5所示的表示檢查光之波長(nm)與加工深度(μm)之關係的控制圖,並將此控制圖儲存在後述的控制手段之記憶體中。 The inspection light source 71 is composed of a superluminescent diode (SLD) or a flash bulb, and has a wavelength band of 800 to 900 nm in the illustrated embodiment. The chromatic aberration lens 72 splits the inspection light having a wavelength band of 800 to 900 nm emitted from the inspection light source 71 by a wavelength, and directs the expansion angle of the inspection light to the scanning mirror 53 with a slight change for each wavelength. Therefore, the inspection light having a wavelength band of 800 to 900 nm reflected on the scanning mirror 53 and guided to the f θ lens 521 forms a light of 800 nm concentrated on P1 as shown in FIG. 3, and the wavelength is 900 nm light is concentrated on P2. Further, in the illustrated embodiment, the interval between the condensed spot P1 having a wavelength of 800 nm and the condensed spot P2 having a wavelength of 900 nm is set to 50 μm. Therefore, in the illustrated embodiment, a control map showing the relationship between the wavelength (nm) of the inspection light and the processing depth (μm) shown in FIG. 5 is created, and the control map is stored in a memory of a control means to be described later. in.

上述光束分離器74雖然是讓檢查光源71所發出之具有800~900nm的波長頻帶之檢查光朝向並通過色差透鏡72,但是已被照射在工作夾台36上的檢查光之反射光會朝向反射光檢測路徑73分歧。配置在反射光檢測路徑73上的波長篩選手段75是由聚光透鏡751、在該聚光透鏡751的下流側而配置於聚光透鏡751的焦點位置且包括有針孔752a的針孔遮罩752、以及配置在該針孔遮罩752的下流側且將已通過針孔752a的反射光形成為平行光之準直透鏡(collimation lens)753所形成。像這樣所構成的波長篩選手段75是形成為可使被照射在工作夾台36所保持的被加工物W上之檢查光在聚光點反射之波長的反射光通過針孔遮罩752的針孔752a。上述波長檢測手段76是由繞射光柵761、 聚光透鏡762以及線型影像感測器763所形成。上述繞射光柵761會將藉由準直透鏡753而形成為平行光之反射光繞射,並透過聚光透鏡762將與各波長對應的繞射訊號傳送至線型影像感測器763。線型影像感測器763會檢測藉由繞射光柵761而繞射的反射光之各波長中的光強度,並將檢測訊號傳送至後述的控制手段。 The beam splitter 74 is configured such that the inspection light having the wavelength band of 800 to 900 nm emitted from the inspection light source 71 is directed toward and passing through the chromatic aberration lens 72, but the reflected light of the inspection light that has been irradiated on the working chuck 36 is directed toward the reflection. The light detection path 73 is divergent. The wavelength screening means 75 disposed on the reflected light detecting path 73 is a condensing lens 751, a pinhole mask which is disposed at a focus position of the condensing lens 751 on the downstream side of the condensing lens 751 and includes a pinhole 752a. 752, and a collimation lens 753 disposed on the downstream side of the pinhole mask 752 and forming reflected light that has passed through the pinhole 752a as parallel light. The wavelength selection means 75 configured as described above is a needle formed so that the reflected light of the wavelength reflected by the inspection light reflected on the workpiece W held by the work chuck 36 passes through the pinhole mask 752. Hole 752a. The wavelength detecting means 76 is composed of a diffraction grating 761, A condenser lens 762 and a line image sensor 763 are formed. The diffraction grating 761 diffracts the reflected light formed by the collimating lens 753 into parallel light, and transmits the diffracted signal corresponding to each wavelength to the line image sensor 763 through the collecting lens 762. The line image sensor 763 detects the light intensity in each wavelength of the reflected light diffracted by the diffraction grating 761, and transmits the detection signal to a control means to be described later.

在圖示之實施形態中的雷射加工裝置具備有圖4所示之控制手段8。控制手段8是由電腦所構成,且包括有按照控制程式進行演算處理之中央處理裝置(CPU)81、保存控制程式等之唯讀記憶體(ROM)82、保存演算結果等之可讀寫的隨機存取記憶體(RAM)83、輸入介面84、以及輸出介面85。控制手段8的輸入介面84會被輸入來自上述攝像手段6、線型影像感測器763等之檢測訊號。然後,會從控制手段8的輸出介面85將控制訊號輸出至上述加工進給手段37、分度進給手段38、脈衝雷射光線振盪手段51、掃瞄鏡53的掃瞄馬達530、光軸變更手段54、加工深度檢測手段7的檢查光源71等。再者,在上述隨機存取記憶體(RAM)83中儲存有圖5所示之表示檢查光之波長(nm)與加工深度(μm)的關係之控制圖。 The laser processing apparatus according to the embodiment shown in the drawings includes the control means 8 shown in FIG. The control means 8 is constituted by a computer, and includes a central processing unit (CPU) 81 that performs arithmetic processing in accordance with a control program, a read-only memory (ROM) 82 that stores a control program, and the like, and a readable and writable storage result. A random access memory (RAM) 83, an input interface 84, and an output interface 85 are provided. The input interface 84 of the control means 8 is input with detection signals from the imaging means 6, the line type image sensor 763, and the like. Then, the control signal is output from the output interface 85 of the control means 8 to the processing feed means 37, the index feed means 38, the pulsed laser ray oscillating means 51, the scan motor 530 of the scan mirror 53, and the optical axis. The changing means 54 and the inspection light source 71 of the processing depth detecting means 7 are used. Further, in the random access memory (RAM) 83, a control map showing the relationship between the wavelength (nm) of the inspection light and the processing depth (μm) shown in FIG. 5 is stored.

在圖示之實施形態中的加工裝置是如以上所述地被構成,以下將說明其作用。 The processing apparatus in the embodiment shown in the drawings is configured as described above, and its action will be described below.

圖6之(a)以及(b)中所示為作為被加工物的半導體晶圓之立體圖及主要部位放大剖面圖。 Fig. 6 (a) and (b) are a perspective view showing a semiconductor wafer as a workpiece and an enlarged cross-sectional view of a main portion.

圖6之(a)以及(b)中所示之半導體晶圓10,是在厚度為 150μm之矽等基板110的表面110a上形成有將絕緣膜與形成電路之功能膜積層而成的功能層120,且在該功能層120上以形成為格子狀的複數條分割預定線121所劃分出的複數個區域中形成有IC、LSI等器件122。再者,在圖示之實施形態中,形成功能層120的絕緣膜,是由SiO2膜或以SiOF、BSG(SiOB)等之無機物類的膜或是聚醯亞胺類、聚對二甲苯類等聚合物膜之有機物類的膜所形成的低介電常數絕緣體被覆膜(Low-k膜)所形成,並將厚度設定成10μm。又,在半導體晶圓10的分割預定線121上部分地配置有複數個用於測試器件122的功能之稱為測試元件群組(TEG)的測試用金屬膜123,該測試用金屬膜123是由銅(Cu)及鋁(Al)所形成。 The semiconductor wafer 10 shown in (a) and (b) of FIG. 6 is formed with a functional layer in which an insulating film and a functional film forming a circuit are laminated on a surface 110a of a substrate 110 having a thickness of 150 μm. In the functional layer 120, a device 122 such as an IC or an LSI is formed in a plurality of regions divided by a plurality of predetermined dividing lines 121 formed in a lattice shape. Further, in the embodiment shown in the figure, the insulating film forming the functional layer 120 is made of a SiO 2 film or a film of an inorganic substance such as SiOF or BSG (SiOB) or a polyblyimide or parylene. A low dielectric constant insulator coating film (Low-k film) formed of a film of an organic substance such as a polymer film is formed, and the thickness is set to 10 μm. Further, a test metal film 123 called a test element group (TEG), which is a plurality of test element groups (TEG) for partially functioning the test device 122, is partially disposed on the division planned line 121 of the semiconductor wafer 10, and the test metal film 123 is It is formed of copper (Cu) and aluminum (Al).

在沿著分割預定線加工上述半導體晶圓10時,會實施將半導體晶圓10貼附在已裝設於環狀框架的切割膠帶上之晶圓支撐步驟。亦即,是如圖7所示地將構成半導體晶圓10的基板110的背面110b貼附在已被裝設於環狀框架F上之由聚烯烴(polyolefin)等合成樹脂片所形成的切割膠帶T之表面上。因此,被貼附在切割膠帶T的表面上之半導體晶圓10是使功能層120的表面120a成為上側。 When the semiconductor wafer 10 is processed along the planned dividing line, a wafer supporting step of attaching the semiconductor wafer 10 to the dicing tape attached to the annular frame is performed. That is, as shown in FIG. 7, the back surface 110b of the substrate 110 constituting the semiconductor wafer 10 is attached to a cut formed of a synthetic resin sheet such as polyolefin which has been mounted on the annular frame F. On the surface of the tape T. Therefore, the semiconductor wafer 10 attached to the surface of the dicing tape T has the surface 120a of the functional layer 120 as the upper side.

已實施上述晶圓支撐步驟後,即可將半導體晶圓10的切割膠帶T側載置在圖1所示的雷射加工裝置之工作夾台36上。然後,藉由作動圖未示的吸引手段,以隔著切割膠帶T將半導體晶圓10吸引保持在工作夾台36上(晶圓保持步驟)。因此,隔著切割膠帶T被保持在工作夾台36上的半 導體晶圓10是使功能層120的表面120a成為上側。 After the wafer supporting step described above is performed, the dicing tape T side of the semiconductor wafer 10 can be placed on the working chuck 36 of the laser processing apparatus shown in FIG. Then, the semiconductor wafer 10 is sucked and held on the work chuck 36 via the dicing tape T by a suction means not shown in the drawing (wafer holding step). Therefore, the half that is held on the work chuck 36 across the dicing tape T The conductor wafer 10 has the surface 120a of the functional layer 120 as the upper side.

如上所述,隔著切割膠帶T將半導體晶圓10吸引保持在工作夾台36上之後,控制手段8便作動加工進給手段37以將保持有半導體晶圓10的工作夾台36定位到攝像手段6的正下方。像這樣地進行而將工作夾台36定位到攝像手段6的正下方之後,控制手段8便會作動攝像手段6以實行檢測半導體晶圓10的用來雷射加工之加工區域的校準作業。亦即,攝像手段6以及控制手段8會實行用於進行在半導體晶圓10的預定方向上形成的分割預定線121,與構成沿著分割預定線121照射雷射光線之雷射光線照射手段5的聚光器52之對位的型樣匹配等的影像處理,而完成雷射光線照射位置之校準。又,對於在半導體晶圓10上所形成之相對於上述預定方向朝垂直相交的方向延伸之分割預定線121,也是同樣地完成雷射光線照射位置之校準。 As described above, after the semiconductor wafer 10 is attracted and held on the work chuck 36 via the dicing tape T, the control means 8 operates the feed means 37 to position the work chuck 36 holding the semiconductor wafer 10 to the image. Just below the means 6. After positioning the work chuck 36 directly below the image pickup means 6 as described above, the control means 8 activates the image pickup means 6 to perform a calibration operation for detecting the processing area of the semiconductor wafer 10 for laser processing. That is, the imaging means 6 and the control means 8 perform the divisional line 121 for forming the predetermined direction in the semiconductor wafer 10, and the laser beam irradiation means 5 for illuminating the laser beam along the division line 121. The aligning pattern of the concentrator 52 matches the image processing of the image, and the calibration of the laser beam irradiation position is completed. Further, the alignment of the laser beam irradiation position is similarly performed on the division planned line 121 which is formed on the semiconductor wafer 10 and which extends in the direction perpendicular to the predetermined direction.

當已實施上述的校準步驟後,控制手段8會作動加工進給手段37以如圖8(a)所示地將工作夾台36移動至雷射光線照射手段5的聚光器52所在的雷射光線照射區域,並將預定的分割預定線121定位在聚光器52之正下方。此時,如圖8(a)所示,半導體晶圓10是定位成使比分割預定線121的一端(在圖8(a)中為左端)還內側1mm之位置位於聚光器52的正下方。然後,控制手段8會作動圖未示的聚光點位置調整手段,將聚光器52定位成使脈衝雷射光線中的800nm的波長之聚光點成為分割預定線121的表面位置。 When the above-described calibration step has been carried out, the control means 8 actuates the machining feed means 37 to move the working chuck 36 to the ray of the concentrator 52 of the laser beam irradiation means 5 as shown in Fig. 8(a). The light irradiation area is irradiated, and the predetermined division planned line 121 is positioned directly under the concentrator 52. At this time, as shown in FIG. 8(a), the semiconductor wafer 10 is positioned such that it is located at the position of 1 mm inside the one end (the left end in FIG. 8(a)) of the dividing line 121 at the position of the concentrator 52. Below. Then, the control means 8 activates the condensed spot position adjusting means not shown, and positions the concentrator 52 so that the condensed spot of the wavelength of 800 nm in the pulsed laser ray becomes the surface position of the dividing line 121.

接著,控制手段8會作動脈衝雷射光線振盪手段 51並且作動掃瞄馬達530,以使掃瞄鏡53以預定的旋轉速度旋轉。其結果,從雷射光線照射手段5的聚光器52到半導體晶圓10會將脈衝雷射光線沿著X軸方向在LB1至LBn的2mm之範圍內進行照射(雷射加工溝形成步驟)。另一方面,控制手段8會作動加工深度檢測手段7,檢測藉由上述脈衝雷射光線LB1~LBn的照射而被加工過的雷射加工溝之深度。加工深度檢測手段7的線型感測器763在加工開始時,是使800nm波長的光強度顯示為最高值,且隨著加工的進行而使光強度為最高值之波長接近於900nm。然後,在將所加工的雷射加工溝的深度設定為30μm的情況中,會從圖5所示的控制圖中將成為控制基準的波長設定為860nm。因此,當根據來自線型影像感測器763的檢測訊號已使光強度為最高值的波長形成860nm時,控制手段便會判斷雷射加工溝的深度已達到30μm,並作動加工進給手段37而將工作夾台36在圖8(a)中朝箭頭X1所示的方向移動2mm(進給步驟)。 Then, the control means 8 will actuate the pulse laser oscillating means The scan motor 530 is also actuated to rotate the scan mirror 53 at a predetermined rotational speed. As a result, from the concentrator 52 of the laser beam irradiation means 5 to the semiconductor wafer 10, the pulsed laser beam is irradiated in the X-axis direction within 2 mm of LB1 to LBn (laser processing groove forming step). . On the other hand, the control means 8 operates the machining depth detecting means 7 to detect the depth of the laser machining groove processed by the irradiation of the pulsed laser beams LB1 to LBn. The line sensor 763 of the processing depth detecting means 7 displays the light intensity at the wavelength of 800 nm as the highest value at the start of the processing, and the wavelength at which the light intensity is the highest value as the processing progresses is close to 900 nm. Then, when the depth of the processed laser processing groove is set to 30 μm, the wavelength to be the control reference is set to 860 nm from the control chart shown in FIG. 5 . Therefore, when the wavelength from the line image sensor 763 has been set to 860 nm, the control means determines that the depth of the laser processing groove has reached 30 μm, and operates the feed means 37. The work chuck 36 is moved by 2 mm in the direction indicated by the arrow X1 in Fig. 8(a) (feeding step).

重複實施上述的雷射加工溝形成步驟與進給步驟,並在如圖8(b)所示地使分割預定線121的另一端(在圖8(b)中為右端)位於聚光器52的正下方位置上而已實施過上述雷射加工溝形成步驟後,控制手段8會藉由將預定頻率的RF(radio frequency)施加在由聲光元件(AOD)所構成的光軸變更手段54上而將脈衝雷射光線LB的光軸朝向雷射光線吸收手段55,藉以停止雷射光線對保持於工作夾台36上的半導體晶圓10的照射,並且停止加工進給手段37的作動而停止工作夾台36的移動。其結果,在半導體晶圓10上會形成 如圖8(c)所示地深度比功能層120的厚度更深、亦即到達基板110之深度為30μm的雷射加工溝130,且將上述金屬膜123去除並且將功能層120分斷。然後,沿著形成於半導體晶圓10上的所有分割預定線121實施上述的雷射加工溝形成步驟以及進給步驟。 The above-described laser processing groove forming step and feeding step are repeatedly performed, and the other end (the right end in FIG. 8(b)) of the division planned line 121 is positioned in the concentrator 52 as shown in FIG. 8(b). After the above-described laser processing groove forming step is performed at the position directly below, the control means 8 applies an RF (radio frequency) of a predetermined frequency to the optical axis changing means 54 composed of the acousto-optic element (AOD). The optical axis of the pulsed laser beam LB is directed toward the laser beam absorbing means 55, thereby stopping the irradiation of the laser light to the semiconductor wafer 10 held on the working chuck 36, and stopping the operation of the processing feed means 37 to stop. The movement of the work table 36. As a result, a semiconductor wafer 10 is formed. As shown in FIG. 8(c), the laser processing groove 120 is deeper than the thickness of the functional layer 120, that is, the laser processing groove 130 having a depth of 30 μm reaching the substrate 110, and the metal film 123 is removed and the functional layer 120 is broken. Then, the above-described laser processing groove forming step and feeding step are performed along all the dividing planned lines 121 formed on the semiconductor wafer 10.

再者,上述雷射加工溝形成步驟,可以用例如以下的加工條件進行。 Further, the laser processing groove forming step can be performed by, for example, the following processing conditions.

雷射光線的波長:355nm(YAG雷射) Laser light wavelength: 355nm (YAG laser)

平均輸出:10W Average output: 10W

重複頻率:10MHz Repeat frequency: 10MHz

如以上所述,圖示的實施形態中的雷射加工溝形成步驟是藉由一邊沿著分割預定線121照射脈衝雷射光線一邊藉由加工深度檢測手段7檢測雷射加工溝的深度,並於雷射加工溝達到預定的厚度後即作動光軸變更手段54以將脈衝雷射光線LB的光軸朝向雷射光線吸收手段55,以停止脈衝雷射光線對保持於工作夾台36上的半導體晶圓10的照射,因此即使在分割預定線121上部分地配置有複數個測試用的金屬膜123的情況中,也可以在不控制脈衝雷射光線的輸出的情形下形成均一的深度的雷射加工溝。 As described above, the laser processing groove forming step in the illustrated embodiment detects the depth of the laser processing groove by the processing depth detecting means 7 while irradiating the pulsed laser beam along the dividing line 121, and After the laser processing groove reaches a predetermined thickness, the optical axis changing means 54 is actuated to direct the optical axis of the pulsed laser beam LB toward the laser beam absorbing means 55 to stop the pulsed laser beam from being held on the working chuck 36. Since the semiconductor wafer 10 is irradiated, even in the case where a plurality of metal films 123 for testing are partially disposed on the division planned line 121, a uniform depth can be formed without controlling the output of the pulsed laser light. Laser processing groove.

如以上所述,已藉由沿著分割預定線121所形成的雷射加工溝130將功能層120分斷的半導體晶圓10,會被搬送至分割步驟,而沿著功能層120已分斷的分割預定線121進行分割。 As described above, the semiconductor wafer 10 which has been separated by the laser processing groove 130 formed along the division planned line 121 is transferred to the dividing step, and is separated along the functional layer 120. The division planned line 121 performs division.

36‧‧‧工作夾台 36‧‧‧Working table

5‧‧‧雷射光線照射手段 5‧‧‧Laser light exposure

51‧‧‧脈衝雷射光線振盪手段 51‧‧‧Pulse laser oscillating means

511‧‧‧脈衝雷射光線振盪器 511‧‧‧pulse laser ray oscillator

512‧‧‧重複頻率設定手段 512‧‧‧Repetition frequency setting means

52‧‧‧聚光器 52‧‧‧ concentrator

521‧‧‧fθ透鏡 521‧‧‧fθ lens

53‧‧‧掃瞄鏡 53‧‧‧Scan mirror

530‧‧‧掃瞄馬達 530‧‧‧Scan motor

53a‧‧‧箭頭 53a‧‧‧arrow

54‧‧‧光軸變更手段 54‧‧‧ Optical axis change means

55‧‧‧雷射光線吸收手段 55‧‧‧Laser light absorption means

7‧‧‧加工深度檢測手段 7‧‧‧Processing depth detection means

71‧‧‧檢查光源 71‧‧‧Check the light source

72‧‧‧色差透鏡 72‧‧‧chromatic aberration lens

73‧‧‧反射光檢測路徑 73‧‧‧ Reflected light detection path

74‧‧‧光束分離器 74‧‧‧beam splitter

75‧‧‧波長篩選手段 75‧‧‧ Wavelength screening

751‧‧‧聚光透鏡 751‧‧‧ Concentrating lens

752‧‧‧針孔遮罩 752‧‧‧ pinhole mask

752a‧‧‧針孔 752a‧‧‧ pinhole

753‧‧‧準直透鏡 753‧‧‧ Collimating lens

76‧‧‧波長檢測手段 76‧‧‧ Wavelength detection means

761‧‧‧繞射光柵 761‧‧‧diffraction grating

762‧‧‧聚光透鏡 762‧‧‧ concentrating lens

763‧‧‧線型影像感測器 763‧‧‧Line image sensor

LB、LB1、LBn‧‧‧脈衝雷射光線 LB, LB1, LBn‧‧‧ pulsed laser light

W‧‧‧被加工物 W‧‧‧Processed objects

Claims (1)

一種雷射加工裝置,是具備保持被加工物的被加工物保持手段、和將雷射光線照射在該被加工物保持手段所保持的被加工物上的雷射光線照射手段之雷射加工裝置,其特徵在於,該雷射光線照射手段是由下列所構成:脈衝雷射光線振盪手段,振盪產生脈衝雷射光線;聚光器,將從該脈衝雷射光線振盪手段所振盪產生的脈衝雷射光線聚光並照射在該被加工物保持手段所保持的被加工物上;以及掃瞄鏡,配置在該脈衝雷射光線振盪手段與該聚光器之間,將從該脈衝雷射光線振盪手段所振盪產生的脈衝雷射光線掃瞄而導引至該聚光器,且具備檢測該被加工物保持手段所保持的被加工物的加工深度之加工深度檢測手段,該加工深度檢測手段是由下列所構成:檢查光源,朝向該掃瞄鏡發射具有預定的波長頻帶的檢查光;色差透鏡,配置在該檢查光源與該掃瞄鏡之間,並對應檢查光的波長而分光,且按每個波長將檢查光的擴張角度稍微變更;光束分離器,配置在該檢查光源與該色差透鏡之間,將從該檢查光源發出而透過該掃瞄鏡及該聚光器照射 在該被加工物保持手段所保持的被加工物上的檢查光之反射光分歧到反射光檢測路徑上;波長篩選手段,配置在該反射光檢測路徑上,使在反射光的波長頻帶中可使被加工物與焦點一致的波長之檢查光的反射光通過;波長檢測手段,檢測已通過該波長篩選手段之檢查光的反射光之波長;以及控制手段,根據由該波長檢測手段所檢測出的波長求出該被加工物保持手段所保持的被加工物的加工深度。 A laser processing apparatus is a laser processing apparatus including a workpiece holding means for holding a workpiece and a laser beam irradiation means for irradiating the laser beam onto the workpiece held by the workpiece holding means The laser light irradiation means is composed of the following: a pulsed laser ray oscillating means for oscillating to generate a pulsed laser beam; a concentrator for pulsing a pulsed ray which is oscillated from the pulsed laser oscillating means The illuminating light is condensed and irradiated onto the workpiece held by the workpiece holding means; and the scanning mirror is disposed between the pulsed laser ray oscillating means and the concentrator, and the laser light from the pulse is The pulsed laser beam oscillated by the oscillating means is guided to the concentrator, and has a processing depth detecting means for detecting a processing depth of the workpiece held by the workpiece holding means, and the processing depth detecting means It is constituted by: inspecting a light source, emitting inspection light having a predetermined wavelength band toward the scanning mirror; a color difference lens disposed at the inspection light source and the scanning And splitting the light according to the wavelength of the inspection light, and slightly changing the expansion angle of the inspection light for each wavelength; the beam splitter is disposed between the inspection light source and the color difference lens, and is emitted from the inspection light source. The scanning mirror and the concentrator irradiation The reflected light of the inspection light on the workpiece held by the workpiece holding means branches to the reflected light detection path; the wavelength screening means is disposed on the reflected light detection path so that the wavelength band of the reflected light can be The reflected light of the inspection light having a wavelength matching the focus of the workpiece passes; the wavelength detecting means detects the wavelength of the reflected light of the inspection light that has passed through the wavelength screening means; and the control means detects the wavelength detection means The wavelength of the workpiece is the depth of processing of the workpiece held by the workpiece holding means.
TW104121842A 2014-08-28 2015-07-06 Laser processing device TWI660802B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-173838 2014-08-28
JP2014173838A JP6367048B2 (en) 2014-08-28 2014-08-28 Laser processing equipment

Publications (2)

Publication Number Publication Date
TW201607659A true TW201607659A (en) 2016-03-01
TWI660802B TWI660802B (en) 2019-06-01

Family

ID=55415547

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104121842A TWI660802B (en) 2014-08-28 2015-07-06 Laser processing device

Country Status (4)

Country Link
JP (1) JP6367048B2 (en)
KR (1) KR102303131B1 (en)
CN (1) CN105382420B (en)
TW (1) TWI660802B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107378255A (en) * 2017-07-14 2017-11-24 中国科学院微电子研究所 Method and device for processing wafer by laser
CN113834784A (en) * 2021-09-18 2021-12-24 王红珍 Device for detecting wide bandgap semiconductor electronic device
TWI820325B (en) * 2019-04-03 2023-11-01 日商迪思科股份有限公司 Ultra-high-speed camera equipment

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018098441A (en) * 2016-12-16 2018-06-21 株式会社ディスコ Die bonder
JP6917727B2 (en) * 2017-02-15 2021-08-11 株式会社ディスコ Laser processing equipment
JP6781649B2 (en) * 2017-03-13 2020-11-04 株式会社ディスコ Laser processing equipment
JP6998177B2 (en) * 2017-11-02 2022-01-18 株式会社ディスコ Laser processing equipment
JP6998178B2 (en) * 2017-11-07 2022-01-18 株式会社ディスコ Laser processing equipment
JP7270216B2 (en) * 2019-08-23 2023-05-10 パナソニックIpマネジメント株式会社 LASER PROCESSING DEVICE, LASER PROCESSING METHOD, AND CORRECTION DATA GENERATION METHOD
JP7339086B2 (en) * 2019-09-11 2023-09-05 株式会社ディスコ Measuring device
CN114502312A (en) * 2021-03-04 2022-05-13 国立大学法人名古屋工业大学 Laser processing apparatus and relation determination method
JPWO2023084681A1 (en) * 2021-11-11 2023-05-19

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3880242B2 (en) * 1998-05-20 2007-02-14 キヤノン株式会社 Through hole formation method
US7119351B2 (en) 2002-05-17 2006-10-10 Gsi Group Corporation Method and system for machine vision-based feature detection and mark verification in a workpiece or wafer marking system
JP2005064231A (en) 2003-08-12 2005-03-10 Disco Abrasive Syst Ltd Dividing method of plate-shaped article
JP4473550B2 (en) 2003-10-17 2010-06-02 株式会社ディスコ Laser processing method and laser processing apparatus
JP4349075B2 (en) * 2003-10-28 2009-10-21 パナソニック電工株式会社 Laser processing method and processing state judgment method
JP2006305608A (en) * 2005-04-28 2006-11-09 Toshiba Corp Apparatus and method for laser beam machining
JP2007095952A (en) * 2005-09-28 2007-04-12 Tokyo Seimitsu Co Ltd Laser dicing equipment and laser dicing method
JP5122773B2 (en) 2006-08-04 2013-01-16 株式会社ディスコ Laser processing machine
JP4885650B2 (en) * 2006-08-21 2012-02-29 株式会社ディスコ Surface position detection device and laser processing machine
JP4885658B2 (en) 2006-09-01 2012-02-29 株式会社ディスコ Drilling hole depth detection device and laser processing machine
JP2008170366A (en) * 2007-01-15 2008-07-24 Disco Abrasive Syst Ltd Device of measuring workpiece held by chuck table, and laser beam processing machine
JP5248825B2 (en) 2007-09-06 2013-07-31 株式会社ディスコ Device for detecting the height position of the workpiece held on the chuck table
JP5011072B2 (en) 2007-11-21 2012-08-29 株式会社ディスコ Laser processing equipment
JP2009140958A (en) * 2007-12-03 2009-06-25 Tokyo Seimitsu Co Ltd Laser dicing device and dicing method
JP5199789B2 (en) * 2008-08-25 2013-05-15 株式会社ディスコ Laser processing apparatus and laser processing method
JP2011033383A (en) * 2009-07-30 2011-02-17 Disco Abrasive Syst Ltd Measuring device of workpiece held on chuck table, and laser beam machine
JP5483084B2 (en) * 2010-02-09 2014-05-07 三菱マテリアル株式会社 Laser processing equipment
CN201645045U (en) * 2010-04-08 2010-11-24 深圳市大族激光科技股份有限公司 Laser processing system
JP5981094B2 (en) * 2010-06-24 2016-08-31 東芝機械株式会社 Dicing method
JP5721377B2 (en) * 2010-09-09 2015-05-20 株式会社ディスコ Split method
JP5912293B2 (en) * 2011-05-24 2016-04-27 株式会社ディスコ Laser processing equipment
DE102011079739A1 (en) * 2011-07-25 2013-01-31 Lpkf Laser & Electronics Ag Device and method for carrying out and monitoring a plastic laser transmission welding process
JP2013226590A (en) * 2012-04-26 2013-11-07 Toshiba Corp Laser cutting apparatus and laser cutting method
JP2013230478A (en) * 2012-04-27 2013-11-14 Disco Corp Laser machining apparatus and laser machining method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107378255A (en) * 2017-07-14 2017-11-24 中国科学院微电子研究所 Method and device for processing wafer by laser
CN107378255B (en) * 2017-07-14 2019-03-15 中国科学院微电子研究所 Method and device for processing wafer by laser
TWI820325B (en) * 2019-04-03 2023-11-01 日商迪思科股份有限公司 Ultra-high-speed camera equipment
CN113834784A (en) * 2021-09-18 2021-12-24 王红珍 Device for detecting wide bandgap semiconductor electronic device

Also Published As

Publication number Publication date
JP6367048B2 (en) 2018-08-01
CN105382420A (en) 2016-03-09
KR20160026715A (en) 2016-03-09
TWI660802B (en) 2019-06-01
CN105382420B (en) 2018-11-27
KR102303131B1 (en) 2021-09-15
JP2016047547A (en) 2016-04-07

Similar Documents

Publication Publication Date Title
TWI660802B (en) Laser processing device
KR101975607B1 (en) Laser machining apparatus
TWI587958B (en) Laser processing equipment
KR102178210B1 (en) Method for detecting spot shape of laser beam
JP6261844B2 (en) Laser processing method and laser processing apparatus
US7564570B2 (en) Height position detector for work held on chuck table
TWI630967B (en) Laser processing device
JP2006187783A (en) Laser beam machine
US9981343B2 (en) Laser processing apparatus
JP2012161812A (en) Laser beam irradiation mechanism and laser beam machining apparatus
TW201401360A (en) Wafer processing method
JP2005118808A (en) Laser beam machining device
US9289853B2 (en) Laser beam applying apparatus
JP2016034659A (en) Laser processing device
JP2005103587A (en) Laser beam machining device
KR20170107900A (en) Workpiece internal detection apparatus and workpiece internal detection method
JP2017050377A (en) Wafer processing method
JP2013035003A (en) Laser beam machining device
JP2017050305A (en) Wafer processing method
JP2009142832A (en) Laser beam machining apparatus