TW201501253A - Method and apparatus for joining sealing sheet - Google Patents
Method and apparatus for joining sealing sheet Download PDFInfo
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- TW201501253A TW201501253A TW103115262A TW103115262A TW201501253A TW 201501253 A TW201501253 A TW 201501253A TW 103115262 A TW103115262 A TW 103115262A TW 103115262 A TW103115262 A TW 103115262A TW 201501253 A TW201501253 A TW 201501253A
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- sealing sheet
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- 238000007789 sealing Methods 0.000 title claims abstract description 194
- 238000000034 method Methods 0.000 title claims description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 230000002093 peripheral effect Effects 0.000 claims description 36
- 230000007246 mechanism Effects 0.000 claims description 34
- 239000011342 resin composition Substances 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000012546 transfer Methods 0.000 claims description 11
- 229920005992 thermoplastic resin Polymers 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000007723 transport mechanism Effects 0.000 abstract description 5
- 238000001179 sorption measurement Methods 0.000 description 12
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 230000006837 decompression Effects 0.000 description 7
- 229920001187 thermosetting polymer Polymers 0.000 description 7
- 238000003825 pressing Methods 0.000 description 6
- 238000011109 contamination Methods 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000002788 crimping Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
本發明係關於將形成有由樹脂組成物所構成之密封層的密封片貼附在半導體基板上所形成的複數個半導體元件並加以密封之密封片貼附方法及密封片貼附裝置。 The present invention relates to a sealing sheet attaching method and a sealing sheet attaching apparatus in which a plurality of semiconductor elements formed by attaching a sealing sheet formed of a sealing layer composed of a resin composition to a semiconductor substrate and sealed.
用框體圍繞1個半導體晶片的周圍後,利用由含浸有樹脂之預浸材所構成的第1密封用樹脂片和第2密封用樹脂片,分別夾住該半導體晶片的兩面之各面,而密封半導體晶片以製造半導體裝置(參照專利文獻1)。 After the periphery of one semiconductor wafer is surrounded by the frame, the first sealing resin sheet and the second sealing resin sheet which are formed of the prepreg impregnated with the resin are sandwiched between the respective surfaces of the semiconductor wafer. The semiconductor wafer is sealed to manufacture a semiconductor device (see Patent Document 1).
專利文獻1 日本特開平5-291319號公報 Patent Document 1 Japanese Patent Laid-Open No. Hei 5-291319
然而,上述習知的方法會產生如下之問題。 However, the above conventional methods cause the following problems.
亦即,近年來,因為伴隨應用程式(application)的急速進歩所需求的高密度安裝的關係,有半導體裝置小型化的傾向。因此,由於是在利用切割處理將半導體晶圓分斷成半導體元件之後,將半導體元件個別地用樹 脂密封,所以會有產量(throughput)降低,進而造成生產效率降低之不良情況產生。 In other words, in recent years, there has been a trend toward miniaturization of semiconductor devices due to the high-density mounting required for rapid advancement of applications. Therefore, since the semiconductor wafer is individually sealed with a resin after the semiconductor wafer is separated into semiconductor elements by the dicing process, there is a possibility that the throughput is lowered and the production efficiency is lowered.
本發明係有鑒於此種情況而完成者,其主要目的在提供一種可將密封片以良好精度貼附於半導體基板之密封片貼附方法及密封片貼附裝置。 The present invention has been made in view of such circumstances, and a main object thereof is to provide a sealing sheet attaching method and a sealing sheet attaching device which can attach a sealing sheet to a semiconductor substrate with good precision.
於是,本案發明人等,為了解決該不良情況,反覆實驗、模擬並致力探討研究的結果,得到以下的見解。 Then, in order to solve the problem, the inventors of the present invention repeated experiments, simulations, and efforts to investigate the results of the research, and obtained the following findings.
嘗試在半導體基板的整面貼附形成有由樹脂組成物所構成的密封層之單片密封片並使之硬化後,分斷成該半導體裝置。於是,貼附密封片時,為了提高對半導體元件的密接性,而將密封層加熱以使其軟化。 A single-piece sealing sheet in which a sealing layer made of a resin composition is formed is attached to the entire surface of a semiconductor substrate and cured, and then the semiconductor device is divided. Then, when the sealing sheet is attached, in order to improve the adhesion to the semiconductor element, the sealing layer is heated to soften it.
然而,在加熱壓接密封片的過程中,形成密封層的樹脂組成物會因加熱而軟化。亦即,因為是在黏度降低的狀態下將密封片壓接於半導體基板,故樹脂組成物會從半導體基板擠出,而會有污染保持台等的問題產生。 However, in the process of heating the crimping sealing sheet, the resin composition forming the sealing layer is softened by heating. In other words, since the sealing sheet is pressure-bonded to the semiconductor substrate in a state where the viscosity is lowered, the resin composition is extruded from the semiconductor substrate, and a problem such as contamination of the holding stage occurs.
本發明為了達成此種目的,而採用如下之構成。 In order to achieve such a purpose, the present invention adopts the following constitution.
亦即,一種密封片貼附方法,其係將形成有由熱可塑性樹脂組成物所構成的密封層而成之密封片貼附於半導體基板,該密封片貼附方法的特徵為具備:,搬送過程,將被切斷成前述半導體基板之形狀以下的密封片搬送並重疊於半導體基板上; 第1貼附過程,將前述密封片之外周區域的密封層一邊加熱一邊貼附;及第2貼附過程,將比前述密封片的外周區域靠內側區域的密封層一邊加熱一邊貼附。 In other words, a sealing sheet attaching method is characterized in that a sealing sheet formed by forming a sealing layer composed of a thermoplastic resin composition is attached to a semiconductor substrate, and the sealing sheet attaching method is characterized in that: a process of transferring a sealing sheet cut into a shape below the shape of the semiconductor substrate and superimposing on the semiconductor substrate; In the first attaching process, the sealing layer in the outer peripheral region of the sealing sheet is attached while being heated; and in the second attaching process, the sealing layer on the inner side of the outer peripheral region of the sealing sheet is heated while being attached.
(作用.功效)根據此方法,貼附於半導體基板之密封片的外周區域的密封層會比其內側區域先進行硬化反應而成為半硬化狀態。因此,因加熱而軟化之形成有內側區域的密封層之樹脂組成物即便被按壓,也可藉由在外周區域已半硬化的樹脂組成物而防止被擠出半導體基板的外側。因此,可抑制保持台等被樹脂組成物污染的情況。在此,依據形成密封層之樹脂組成物的特性或加熱溫度等的設定條件,惟僅藉由使加熱狀態的密封片抵接於半導體基板,可進入形成於半導體基板之半導體元件彼此的間隙而密封。或者,也可將密封片一邊進行加壓及加熱,一邊貼附於半導體基板。 (Action and Effect) According to this method, the sealing layer attached to the outer peripheral region of the sealing sheet of the semiconductor substrate is hardened and reacted in a semi-hardened state. Therefore, even if the resin composition of the sealing layer in which the inner region is formed by softening by heating is pressed, the outer side of the semiconductor substrate can be prevented from being extruded by the resin composition which has been semi-hardened in the outer peripheral region. Therefore, it is possible to suppress the contamination of the resin composition by the holding stage or the like. Here, depending on the characteristics of the resin composition forming the sealing layer, the heating temperature, and the like, the sealing sheet in the heated state can be brought into contact with the semiconductor substrate to enter the gap between the semiconductor elements formed on the semiconductor substrate. seal. Alternatively, the sealing sheet may be attached to the semiconductor substrate while being pressurized and heated.
此外,第1貼附過程中之外周區域的密封層的加熱係可以如以下方式實施。 Further, the heating system of the sealing layer in the outer peripheral region in the first attaching process can be carried out as follows.
例如,在一實施形態中,係藉由被覆外周區域之埋設有加熱器的板,將該外周區域的密封層進行加壓及加熱。在其他實施形態中,係使埋設有加熱器的輥在外周區域轉動。又,在其他實施形態中,藉由具有透過性的板,在外周區域照射紅外線以將密封層加熱。此外,在此等各實施形態中,亦可依據形成密封層之樹脂組成物的特性或加熱溫度的設定條件,對密封片僅實施加熱,或者一邊加壓一邊加熱。 For example, in one embodiment, the sealing layer in the outer peripheral region is pressurized and heated by coating a plate in which the heater is embedded in the outer peripheral region. In another embodiment, the roller in which the heater is embedded is rotated in the outer peripheral region. Further, in another embodiment, the insulating layer is irradiated with infrared rays in the outer peripheral region to heat the sealing layer. Further, in each of the above embodiments, the sealing sheet may be heated only or heated while being pressurized depending on the characteristics of the resin composition forming the sealing layer or the setting conditions of the heating temperature.
此等各實施形態中,第2貼附過程係藉由例如被覆內側區域之埋設有加熱器的板,將該內側區域的密封層加熱。在此實施形態中,亦與上述實施形態同樣,亦可對密封片僅實施加熱,或者一邊加壓一邊加熱。 In each of the embodiments, the second attaching process heats the sealing layer in the inner region by, for example, a plate in which the heater is buried in the inner region. Also in this embodiment, as in the above embodiment, the sealing sheet may be heated only or heated while being pressurized.
在此等任一實施形態中,也可適當地實施上述方法。 In any of the above embodiments, the above method can also be suitably carried out.
此外,上述方法中,較佳為在各貼附過程搬送密封片的過程中,將該密封片的密封層預備加熱至保持在未硬化狀態的既定溫度。 Further, in the above method, it is preferred that the sealing layer of the sealing sheet is preheated to a predetermined temperature maintained in an uncured state during the process of transporting the sealing sheet in each attaching process.
根據此方法,可在將密封片貼附於半導體基板後,於短時間使其半硬化。 According to this method, after the sealing sheet is attached to the semiconductor substrate, it can be semi-hardened in a short time.
又,本發明為了達成此種目的,而採用如下之構成。 Moreover, in order to achieve such an object, the present invention adopts the following constitution.
亦即,一種密封片貼附裝置,係將形成有由熱可塑性樹脂組成物所構成的密封層而成之密封片貼附於半導體基板,該密封片貼附裝置的特徵為具備:保持台,保持前述半導體基板;搬送機構,將被切斷成前述半導體基板的形狀以下之密封片藉由保持構件保持,並與保持台上的半導體基板重疊;第1貼附構件,將與前述半導體基板重疊之密封片的外周區域加熱而貼附;及第2貼附構件,將比前述密封片的外周區域靠內側的區域加熱而貼附。 In other words, a sealing sheet attaching device is obtained by attaching a sealing sheet formed of a sealing layer composed of a thermoplastic resin composition to a semiconductor substrate, and the sealing sheet attaching device is characterized in that it has a holding table. Holding the semiconductor substrate; the transfer mechanism holds the sealing sheet having the shape of the semiconductor substrate or less and is held by the holding member and overlaps with the semiconductor substrate on the holding stage; and the first attaching member overlaps the semiconductor substrate The outer peripheral region of the sealing sheet is heated and attached; and the second attaching member is heated and attached to a region inside the outer peripheral region of the sealing sheet.
根據此構成,僅半導體基板上之密封片的外周區域的密封層,受到第1貼附構件加熱而成為已進行硬化反應的半硬化狀態。密封片的內側區域受到第2貼附構件加熱而硬化。因此,可適當地實施上述方法。 According to this configuration, only the sealing layer in the outer peripheral region of the sealing sheet on the semiconductor substrate is heated by the first bonding member to be in a semi-hardened state in which the curing reaction has proceeded. The inner region of the sealing sheet is heated by the second attachment member to be hardened. Therefore, the above method can be suitably carried out.
在此構成中,第1貼附構件係被覆密封片的外周區域之埋設有加熱器的板,前述第2貼附構件係被覆密封片的內側區域之埋設有加熱器的板。 In this configuration, the first attaching member is a plate in which the heater is embedded in the outer peripheral region of the sealing sheet, and the second attaching member is a plate in which the heater is embedded in the inner region of the sealing sheet.
更佳為,構成第1貼附構件的板係由埋設有加熱器的環狀板構成,該加熱器係在比設置於搬送機構之半導體基板的外形還小之保持構件的外周進行升降, 第2貼附構件係於保持構件中埋設有加熱器而構成。 More preferably, the plate constituting the first attachment member is formed of an annular plate in which a heater is embedded, and the heater is lifted and lowered on the outer periphery of the holding member smaller than the outer shape of the semiconductor substrate provided in the transfer mechanism. The second attaching member is configured by embedding a heater in the holding member.
根據此構成,可藉由搬送機構將密封片貼附於半導體基板,故可節省貼附處理的專用裝置。亦即,可將裝置小型化。 According to this configuration, since the sealing sheet can be attached to the semiconductor substrate by the transport mechanism, it is possible to save the dedicated device for the attaching process. That is, the device can be miniaturized.
根據本發明之密封片貼附方法及密封片貼附裝置,由於可將貼附於半導體基板之密封片的外周區域的密封層先進行硬化反應以使其成為半硬化狀態,故可抑制在密封片的內側區域形成軟化的密封層的樹脂組成物,因按壓而從半導體基板被擠出。因此,可抑制保持台等受到樹脂組成物污染的情況。 According to the sealing sheet attaching method and the sealing sheet attaching device of the present invention, since the sealing layer attached to the outer peripheral region of the sealing sheet of the semiconductor substrate can be hardened by the first hardening state, the sealing can be suppressed. The resin composition of the softened sealing layer is formed in the inner region of the sheet, and is extruded from the semiconductor substrate by pressing. Therefore, it is possible to suppress the contamination of the holding substrate or the like by the resin composition.
1‧‧‧片供給部 1‧‧‧ Piece Supply Department
3‧‧‧收納容器 3‧‧‧ storage container
21‧‧‧第1搬送機構 21‧‧‧1st transport agency
22‧‧‧剝離機構 22‧‧‧Disbonding agency
23‧‧‧第1保持台 23‧‧‧1st holding station
24‧‧‧第2搬送機構 24‧‧‧2nd transport agency
26‧‧‧吸附板 26‧‧‧Adsorption plate
26a‧‧‧圓形板 26a‧‧‧round plate
26b‧‧‧環狀板 26b‧‧‧ring plate
25‧‧‧貼附機構 25‧‧‧ Attachment
29a‧‧‧加熱器 29a‧‧‧heater
29b‧‧‧加熱器 29b‧‧‧heater
100‧‧‧控制部 100‧‧‧Control Department
T‧‧‧密封片 T‧‧‧ Sealing film
C‧‧‧半導體元件 C‧‧‧Semiconductor components
M‧‧‧密封層 M‧‧‧ sealing layer
S1、S2‧‧‧第1及第2剝離襯墊 S1, S2‧‧‧1st and 2nd release liners
W‧‧‧半導體基板 W‧‧‧Semiconductor substrate
圖1為顯示密封片的原材輥之斜視圖。 Fig. 1 is a perspective view showing a raw material roll of a sealing sheet.
圖2為密封片的縱剖面圖。 Figure 2 is a longitudinal sectional view of the sealing sheet.
圖3為顯示密封片貼附裝置的整體構成之前視圖。 Fig. 3 is a front view showing the overall configuration of the sealing sheet attaching device.
圖4為顯示密封片貼附裝置的整體構成之俯視圖。 Fig. 4 is a plan view showing the overall configuration of a sealing sheet attaching device.
圖5為顯示吸附板的主要部分構成之俯視圖。 Fig. 5 is a plan view showing the main part of the adsorption plate.
圖6為顯示吸附板的主要部分構成之縱剖面圖。 Fig. 6 is a longitudinal sectional view showing the main part of the adsorption plate.
圖7為顯示襯墊剝離機構的示意構成之前視圖。 Fig. 7 is a front view showing a schematic configuration of a liner peeling mechanism.
圖8為顯示構成貼附機構的減壓室之部分剖面圖。 Fig. 8 is a partial cross-sectional view showing a decompression chamber constituting an attaching mechanism.
圖9為顯示將密封片暫時壓接於半導體基板的動作之圖。 Fig. 9 is a view showing an operation of temporarily pressing a sealing sheet against a semiconductor substrate.
圖10為顯示將密封片暫時壓接於半導體基板的動作之圖。 Fig. 10 is a view showing an operation of temporarily pressing a sealing sheet against a semiconductor substrate.
圖11為顯示將密封片暫時壓接於半導體基板的動作之圖。 Fig. 11 is a view showing an operation of temporarily crimping a sealing sheet to a semiconductor substrate.
圖12為顯示將密封片固定壓接於半導體基板的動作之圖。 Fig. 12 is a view showing an operation of fixing and sealing a sealing sheet to a semiconductor substrate.
圖13為顯示將密封片固定壓接於半導體基板的動作之圖。 Fig. 13 is a view showing an operation of fixing and sealing a sealing sheet to a semiconductor substrate.
圖14為顯示變形例之吸附板的主要部分構成之俯視圖。 Fig. 14 is a plan view showing the configuration of a main part of an adsorption plate according to a modification.
圖15為顯示變形例之吸附板的主要部分構成之前視圖。 Fig. 15 is a front elevational view showing the configuration of a main part of an adsorption plate according to a modification.
以下,參照圖式,說明本發明的一實施例。採用在表面形成有複數個半導體元件的半導體基板上,貼附形成有由樹脂組成物所構成的密封層之密封片的情況為例來進行說明。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings. A case where a sealing sheet in which a sealing layer composed of a resin composition is formed is attached to a semiconductor substrate having a plurality of semiconductor elements formed on its surface will be described as an example.
例如,如圖1及圖2所示,密封片T是以捲繞有長條密封片T的原材輥或從該原材輥切斷成既定形狀的片狀體而供給。又,該密封片T係在密封層M的兩面附設有保護用第1剝離襯墊S1及第2剝離襯墊S2。 For example, as shown in FIG. 1 and FIG. 2, the sealing sheet T is supplied by a raw material roll around which the long sealing sheet T is wound, or a sheet-like body cut into a predetermined shape from the raw material roll. Further, in the sealing sheet T, the first release liner S1 for protection and the second release liner S2 are attached to both surfaces of the sealing layer M.
密封層M是從密封材料形成為片狀。以密封材料而言,可列舉例如:熱硬化性矽樹脂、環氧樹脂、熱硬化性聚醯亞胺樹脂、酚樹脂(phenol resin)、脲樹脂(urea resin)、三聚氰胺樹脂、不飽和聚酯樹脂、酞酸二烯丙酯(diallyl phthalate)樹脂、熱硬化性胺基甲酸酯樹脂(urethane resin)等的熱硬化性樹脂。又,以密封材料而言,也可列舉:上述熱硬化性樹脂、和以適當的比例含有添加劑的熱硬化性樹脂組成物。 The sealing layer M is formed into a sheet shape from a sealing material. Examples of the sealing material include thermosetting resin, epoxy resin, thermosetting polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester. A thermosetting resin such as a resin, a diallyl phthalate resin, or a thermosetting urethane resin. Moreover, the thermosetting resin and the thermosetting resin composition containing an additive in an appropriate ratio are also mentioned as a sealing material.
以添加劑而言,可列舉例如:充填劑、螢光體等。以充填劑而言,可列舉例如:矽石(silica)、氧化鈦、滑石、氧化鋁、氮化鋁、氮化矽等的無機微粒子,例如:矽氧(silicone)粒子等的有機微粒子等。螢光體具有波長轉換機能,可列舉例如:能將藍色光轉換成黃色 光的黃色螢光體、將藍色光變成紅色光的紅色螢光體等。以黃色螢光體而言,可列舉例如:Y3Al5O12:Ce(YAG(釔.鋁.石榴石):Ce)等的石榴石型螢光體。以紅色螢光體而言,可列舉例如:CaAlSiN3:Eu、CaSiN2:Eu等的氮化物螢光體等。 Examples of the additive include a filler, a phosphor, and the like. Examples of the filler include inorganic fine particles such as silica, titanium oxide, talc, aluminum oxide, aluminum nitride, and tantalum nitride, and organic fine particles such as silicon oxide particles. The phosphor has a wavelength conversion function, and examples thereof include a yellow phosphor that converts blue light into yellow light, a red phosphor that converts blue light into red light, and the like. Examples of the yellow phosphor include a garnet-type phosphor such as Y 3 Al 5 O 12 :Ce (YAG (yttrium aluminum garnet): Ce). Examples of the red phosphor include a nitride phosphor such as CaAlSiN 3 :Eu or CaSiN 2 :Eu.
密封層M在密封半導體元件前,被調整成半固體狀,具體而言,於密封材料含有熱硬化性樹脂的情況,可在例如:完全硬化(C階段化)之前,亦即,在半硬化(B階段)狀態下進行調整。 The sealing layer M is adjusted to be semi-solid before sealing the semiconductor element. Specifically, when the sealing material contains a thermosetting resin, it can be, for example, completely cured (C-staged), that is, in a semi-hardened state. Adjust in the (B phase) state.
密封層M的尺寸係可依半導體元件及基板的尺寸而適當設定。具體而言,在密封片被準備為長條片的情況下,密封層的左右方向的長度、即寬度為例如100mm以上,較佳為200mm以上,例如為1500mm以下,較佳為700mm以下。又,密封層的厚度係可因應半導體元件的尺寸而適當設定,例如為30μm以上,較佳為100μm以上,又,例如為3000μm以下,較佳為1000μm以下。 The size of the sealing layer M can be appropriately set depending on the size of the semiconductor element and the substrate. Specifically, when the sealing sheet is prepared as a long piece, the length of the sealing layer in the left-right direction, that is, the width is, for example, 100 mm or more, preferably 200 mm or more, for example, 1500 mm or less, preferably 700 mm or less. Further, the thickness of the sealing layer can be appropriately set in accordance with the size of the semiconductor element, and is, for example, 30 μm or more, preferably 100 μm or more, and for example, 3000 μm or less, preferably 1,000 μm or less.
第1剝離襯墊S1及第2剝離襯墊S2可列舉:例如聚乙烯片、聚酯片(PET等)、聚苯乙烯片、聚碳酸酯片、聚醯亞胺片等的聚合物片,例如陶瓷片,例如金屬箔等。在剝離襯墊之與密封層接觸的接觸面上,亦可實施氟處理等的脫模處理。第1剝離襯墊及第2剝離襯墊的尺寸係可依剝離條件而適當設定,厚度為例如15μm以上,較佳為25μm以上,又,例如為125μm以下,較佳為75μm以下。 Examples of the first release liner S1 and the second release liner S2 include a polymer sheet such as a polyethylene sheet, a polyester sheet (PET or the like), a polystyrene sheet, a polycarbonate sheet, and a polyimide sheet. For example, a ceramic sheet, such as a metal foil or the like. A release treatment such as fluorine treatment may be performed on the contact surface of the release liner which is in contact with the sealing layer. The size of the first release liner and the second release liner can be appropriately set depending on the peeling conditions, and the thickness is, for example, 15 μm or more, preferably 25 μm or more, and is, for example, 125 μm or less, or preferably 75 μm or less.
圖3為密封片貼附裝置的前視圖,圖4為密封片貼附裝置的俯視圖。 Fig. 3 is a front view of the sealing sheet attaching device, and Fig. 4 is a plan view of the sealing sheet attaching device.
密封片貼附裝置係由片供給部1、第1搬送機構21、襯墊剝離機構22、第1保持台23、第2搬送機構24及貼附機構25等所構成。 The sealing sheet attaching device is composed of a sheet supply unit 1, a first transfer mechanism 21, a spacer peeling mechanism 22, a first holding stage 23, a second transfer mechanism 24, and an attaching mechanism 25.
片供給部1具有載置台2。收納容器3被載置於載置台2。該收納容器3係積層收納有例如:被切斷成半導體基板W的形狀的單片密封片T。 The sheet supply unit 1 has a mounting table 2 . The storage container 3 is placed on the mounting table 2. The storage container 3 is housed with a single piece of sealing sheet T that is cut into a shape of the semiconductor substrate W, for example.
第1搬送機構21係於可在前後左右進行水平移動及升降之吸附單元的下端,具備有吸附板26。亦即,具備第1可動台28,其在沿著延伸於裝置本體的横向之框架27的導軌R1上移動。朝裝置本體的前後保持水平的導軌R2係裝設於第1可動台28的下部。具備有可沿縱框架升降的吸附板26,該縱框架係懸垂支持於可沿著導軌R2前後移動的第2可動台30。 The first transfer mechanism 21 is provided with a suction plate 26 at a lower end of the adsorption unit that can horizontally move and move up and down. That is, the first movable table 28 is provided to move along the guide rail R1 extending along the frame 27 extending in the lateral direction of the apparatus body. A guide rail R2 that is horizontally positioned toward the front and rear of the apparatus main body is attached to a lower portion of the first movable table 28. There is provided an adsorption plate 26 that can be raised and lowered along the vertical frame, and the vertical frame is suspended and supported by the second movable table 30 that can move back and forth along the guide rail R2.
吸附板26係如圖5及圖6所示,由圓形板26a和環狀板26b所構成。 The adsorption plate 26 is composed of a circular plate 26a and an annular plate 26b as shown in Figs. 5 and 6 .
圓形板26a係比半導體基板W的外形小。又,該圓形板26a的內部埋設有加熱器29a。 The circular plate 26a is smaller than the outer shape of the semiconductor substrate W. Further, a heater 29a is embedded in the circular plate 26a.
環狀板26b係比半導體基板W的外形大,且以在圓形板26a的外側相對於該圓形板26a升降的方式構成。例如,具備經由軸承65繞著第1搬送機構21的支軸進行升降及旋轉的轂部66,並且在該轂部66設置 朝徑向延伸至中心的三根支持臂67。在各支持臂67的下端裝設有環狀板26b。 The annular plate 26b is larger than the outer shape of the semiconductor substrate W, and is configured to move up and down with respect to the circular plate 26a on the outer side of the circular plate 26a. For example, the hub portion 66 that moves up and down around the support shaft of the first conveying mechanism 21 via the bearing 65 is provided, and is provided in the hub portion 66. Three support arms 67 extend radially to the center. An annular plate 26b is attached to the lower end of each of the support arms 67.
因此,吸附板26係在搬送過程中藉由環狀板26b吸附保持密封片T的外周區域AR1,藉由圓形板26a吸附保持密封片T的內側區域AR2。此時,藉由兩個吸附板26a、26b,使得密封片T能在平坦狀態下被保持。 Therefore, the suction plate 26 sucks and holds the outer peripheral region AR1 of the sealing sheet T by the annular plate 26b during the conveyance, and the inner region AR2 of the sealing sheet T is suction-held by the circular plate 26a. At this time, the sealing sheet T can be held in a flat state by the two adsorption plates 26a, 26b.
加熱器29a及加熱器29b係以可藉由控制部100個別調整溫度的方式構成。 The heater 29a and the heater 29b are configured such that the temperature can be individually adjusted by the control unit 100.
圓形板26a及環狀板26b亦可為在金屬製板形成有吸引孔的構成,亦可以多孔質構成。 The circular plate 26a and the annular plate 26b may have a configuration in which a suction hole is formed in the metal plate, or may be porous.
此外,第1搬送機構21相當於本發明的搬送機構,吸附板26相當於保持構件,圓形板26a相當於第1貼附構件,環狀板26b相當於第2貼附構件。 Further, the first conveying mechanism 21 corresponds to the conveying mechanism of the present invention, the suction plate 26 corresponds to the holding member, the circular plate 26a corresponds to the first attachment member, and the annular plate 26b corresponds to the second attachment member.
襯墊剝離機構22係如圖7所示,由剝離帶供給部31、剝離單元32、帶回收部33及相機34所構成。 As shown in FIG. 7, the spacer peeling mechanism 22 is composed of a peeling tape supply unit 31, a peeling unit 32, a tape collecting unit 33, and a camera 34.
剝離帶供給部31係將寬度比密封片T窄的長條剝離帶TS供給到剝離單元32。 The peeling tape supply unit 31 supplies the long peeling tape TS having a width narrower than the sealing sheet T to the peeling unit 32.
剝離單元32具備有捲繞剝離帶TS的剝離輥35。該剝離輥35可升降,且可上升到比收納容器3還高的位置。亦即,在密封片T被第1搬送機構21吸附保持而搬送的過程中,剝離輥35將剝離帶TS按壓而貼附到密封片T背面的剝離襯墊S2。 The peeling unit 32 is provided with a peeling roller 35 that winds the peeling tape TS. The peeling roller 35 can be raised and lowered, and can be raised to a position higher than the storage container 3. In other words, during the process in which the sealing sheet T is suctioned and held by the first conveying mechanism 21, the peeling roller 35 presses the peeling tape TS and attaches it to the release liner S2 on the back surface of the sealing sheet T.
帶回收部33係在藉由剝離輥35貼附到密封片T背面側的剝離襯墊S2的狀態下捲起剝離帶TS,藉此將剝離帶TS連同從密封片T被剝離的剝離襯墊S2一起捲起並回收到回收筒管。 The tape collecting portion 33 winds up the release tape TS in a state where the release sheet S2 is attached to the release liner S2 on the back side of the sealing sheet T, whereby the release tape TS is peeled off together with the release liner from the sealing sheet T. The S2 is rolled up together and recycled to the recovery bobbin.
相機34係從背面拍攝第2剝離襯墊S2被剝離後的密封片T,並將該影像資料傳送到控制部100。 The camera 34 captures the sealing sheet T from which the second release liner S2 has been peeled off from the back side, and transmits the image data to the control unit 100.
如圖3及圖4所示,第1保持台23係由形狀比半導體基板W大的夾盤台所構成。又,第1保持台23係以繞縱軸旋轉,且進行半導體基板W的對準之方式構成。又,第1保持台23係以沿著導軌38在涵蓋半導體基板W的載置位置與裝置內側的對準位置進行往復移動之方式構成。 As shown in FIGS. 3 and 4, the first holding stage 23 is constituted by a chuck table having a shape larger than that of the semiconductor substrate W. Further, the first holding stage 23 is configured to rotate about the vertical axis and to align the semiconductor substrate W. Further, the first holding stage 23 is configured to reciprocate along the guide rail 38 at an alignment position covering the semiconductor substrate W at the placement position on the inside of the device.
在對準位置的上方,配備有2台相機39,對半導體基板W進行拍攝,將兩影像資料傳送到控制部100。 Two cameras 39 are provided above the alignment position, and the semiconductor substrate W is imaged, and the two image data are transmitted to the control unit 100.
第2搬送機構24係具備在導軌R3上進行裝置移動之可動台42,該導軌R3係沿著延伸於裝置本體的横向的框架41而到達貼附機構25側。在可沿著被懸垂支持於該可動台42之縱框架進行升降的吸附單元下端,具備有吸附板44。吸附板44具有半導體基板W之形狀以上的大小。亦即,基板搬送機構24係構成為在第1保持台23至後述的第2保持台45之間進行往復移動。 The second transport mechanism 24 includes a movable table 42 that moves the device on the guide rail R3, and the guide rail R3 reaches the side of the attaching mechanism 25 along the frame 41 extending in the lateral direction of the device body. An adsorption plate 44 is provided at a lower end of the adsorption unit that can be lifted and lowered along a vertical frame that is suspended and supported by the movable table 42. The adsorption plate 44 has a size equal to or larger than the shape of the semiconductor substrate W. In other words, the substrate transfer mechanism 24 is configured to reciprocate between the first holding stage 23 and the second holding stage 45, which will be described later.
貼附機構25係由第2保持台45及減壓室46等所構成。 The attaching mechanism 25 is constituted by the second holding base 45, the decompression chamber 46, and the like.
第2保持台45係如圖8所示,收納於構成減壓室46之上下一對上殼體46A與下殼體46B中的下殼體46B。 As shown in FIG. 8, the second holding base 45 is housed in a lower casing 46B that constitutes a pair of upper casing 46A and lower casing 46B above and below the decompression chamber 46.
又,下殼體46B係構成為沿著導軌48在裝置本體前側之半導體基板W的接收位置與上殼體46A下方之間往復移動。 Further, the lower case 46B is configured to reciprocate along the guide rail 48 between the receiving position of the semiconductor substrate W on the front side of the apparatus body and the lower side of the upper casing 46A.
構成減壓室46的上殼體46A係設置於升降驅動機構50。此升降驅動機構50具備有:可動台53,其可沿著縱向配置於縱壁51背部之軌道52進行升降;可動框54,其以可調節高度的方式支持於該可動台53;以及臂55,其從該可動框54朝前方延伸。在由此臂55的前端部朝下方延伸的支軸56上裝設有上殼體46A。 The upper casing 46A constituting the decompression chamber 46 is provided in the elevation drive mechanism 50. The lifting drive mechanism 50 is provided with a movable table 53 that can be raised and lowered along a rail 52 disposed longitudinally on the back of the vertical wall 51; a movable frame 54 supported by the movable table 53 in an adjustable height; and an arm 55 It extends forward from the movable frame 54. An upper casing 46A is attached to a support shaft 56 that extends downward from the front end portion of the arm 55.
可動台53係藉由利用馬達58使螺桿軸57進行正反轉動而進行螺桿進給升降。又,在上殼體46A的內部,裝設有可升降的按壓板59。於該按壓板59中埋設有加熱器60。 The movable table 53 performs screw feed up and down by rotating the screw shaft 57 forward and backward by the motor 58. Further, a pressing plate 59 that can be raised and lowered is attached to the inside of the upper casing 46A. A heater 60 is embedded in the pressing plate 59.
其次,詳細說明關於利用上述密封片貼附裝置將密封片貼附於半導體基板之一連串的動作。 Next, an operation of attaching the sealing sheet to one of the semiconductor substrates by the above-described sealing sheet attaching device will be described in detail.
收納有密封片T的收納容器3被載置於載置台2。第1搬送機構21的吸附板26吸附密封片T並在平坦的狀態下將其從收納容器3搬出。第1搬送機構21將密封片T搬送到襯墊剝離機構22。 The storage container 3 in which the sealing sheet T is housed is placed on the mounting table 2. The suction plate 26 of the first conveying mechanism 21 suctions the sealing sheet T and carries it out of the storage container 3 in a flat state. The first conveying mechanism 21 conveys the sealing sheet T to the liner peeling mechanism 22 .
在此搬送過程中,密封片T先被搬送到相機34的上方。此時,如圖7所示,在水平搬送的過程中,剝離輥35逐漸上升到自收納容器3偏離之搬送方向的前方位置。捲繞於該剝離輥35的剝離帶TS係如鏈線所示,被按壓至密封片T背面側的第2剝離襯墊S2。其後,以與第1搬送機構21的搬送速度同步的速度,一邊捲起剝離帶TS,一邊將第2剝離襯墊S2從密封片T剝離。被剝離的第2剝離襯墊S2係連同剝離帶TS一起被捲起並回收到回收筒管(bobbin)19。 During this transfer, the sealing sheet T is first transported to the top of the camera 34. At this time, as shown in FIG. 7, during the horizontal conveyance, the peeling roller 35 gradually rises to the front position shifted from the storage container 3 in the conveyance direction. The peeling tape TS wound around the peeling roller 35 is pressed to the second release liner S2 on the back side of the sealing sheet T as indicated by a chain line. Thereafter, the second release liner S2 is peeled off from the sealing sheet T while the release tape TS is wound up at a speed synchronized with the conveyance speed of the first conveyance mechanism 21. The peeled second release liner S2 is wound up together with the release tape TS and recovered into a recovery bobbin 19.
當密封片T到達相機34的上方時,拍攝密封片T。所取得的影像資料被傳送到控制部100。當拍攝處理完成時,第1搬送機構21在吸附保持密封片T的狀態下,移動到第1保持台23上。 When the sealing sheet T reaches above the camera 34, the sealing sheet T is photographed. The acquired image data is transmitted to the control unit 100. When the photographing process is completed, the first transport mechanism 21 moves to the first holding stage 23 while sucking and holding the sealing sheet T.
在密封片T從收納容器3被搬出的大致同時,半導體基板W被載置於第1保持台23。吸附保持有半導體基板W的第1保持台23移動到對準位置,藉由相機39拍攝表面。所拍攝的影像資料被傳送到控制部100。 The semiconductor substrate W is placed on the first holding stage 23 while the sealing sheet T is being carried out from the storage container 3 at substantially the same time. The first holding stage 23 that adsorbs and holds the semiconductor substrate W is moved to the aligned position, and the surface is photographed by the camera 39. The captured image data is transmitted to the control unit 100.
當拍攝處理完成時,第1保持台23返回載置位置。在此,以藉由控制部100的影像解析處理所求得之密封片T的輪廓與半導體基板W的輪廓一致的方式,進行半導體基板W的對準。使第1保持台23繞著縱軸旋轉以進行對準。 When the photographing processing is completed, the first holding stage 23 returns to the placement position. Here, the alignment of the semiconductor substrate W is performed so that the outline of the sealing sheet T obtained by the image analysis processing of the control unit 100 matches the contour of the semiconductor substrate W. The first holding stage 23 is rotated about the longitudinal axis for alignment.
當半導體基板W的對準完成時,藉由第1搬送機構21所搬送到的密封片T係如圖9所示,與半導體基板W對向配置。然後,圓形板26a及環狀板26b係在將密封片T保持平坦的狀態下下降到既定高度為止。此時,密封片T的底面下降到與半導體元件的表面接觸之高度為止。 When the alignment of the semiconductor substrate W is completed, the sealing sheet T conveyed by the first conveying mechanism 21 is disposed opposite to the semiconductor substrate W as shown in FIG. 9 . Then, the circular plate 26a and the annular plate 26b are lowered to a predetermined height while the sealing sheet T is kept flat. At this time, the bottom surface of the sealing sheet T is lowered to the height in contact with the surface of the semiconductor element.
其次,使加熱器29b作動,並且如圖10所示,使環狀板26b些微下降。亦即,一邊藉由環狀板26b將既定的負載施加到密封片T的外周區域,一邊以既定時間將密封層M加熱。此外,負載、加熱溫度及加熱時間等條件係依形成密封層M之熱可塑性樹脂組成物的特性 而異,而樹脂組成物係設定為成為以下狀態之條件。防止因加熱而軟化之內側區域AR2的樹脂組成物從半導體基板W的外側擠出,並在未硬化狀態下使外周區域AR1的樹脂組成物半硬化到持續維持黏著性的程度為止。 Next, the heater 29b is actuated, and as shown in Fig. 10, the annular plate 26b is slightly lowered. In other words, the sealing layer M is heated for a predetermined period of time while applying a predetermined load to the outer peripheral region of the sealing sheet T by the annular plate 26b. Further, conditions such as load, heating temperature, and heating time depend on the characteristics of the thermoplastic resin composition forming the sealing layer M. The resin composition is set to be in the following state. The resin composition of the inner region AR2 which is softened by heating is prevented from being extruded from the outer side of the semiconductor substrate W, and the resin composition of the outer peripheral region AR1 is semi-hardened in an uncured state until the adhesiveness is maintained.
藉由環狀板26a,形成密封層M的樹脂組成物會軟化而一邊將外周區域的半導體元件間的空氣排除一邊進入,以密封半導體元件。待既定時間經過時,樹脂組成物半硬化而被暫時壓接於半導體基板W。 By the annular plate 26a, the resin composition forming the sealing layer M is softened and enters while excluding air between the semiconductor elements in the outer peripheral region to seal the semiconductor element. When the predetermined time elapses, the resin composition is semi-hardened and temporarily pressed against the semiconductor substrate W.
如圖11所示,使圓形板26a些微下降以加熱密封層M的內側區域AR2而使樹脂組成物軟化,並逐漸進入半導體元件間。此時,密封片T的表面藉由環狀板26b及圓形板26a而被矯正成平坦。當既定時間經過且樹脂組成物半硬化時,使環狀板26b及圓形板26a上升以解除加壓及加熱。 As shown in Fig. 11, the circular plate 26a is slightly lowered to heat the inner region AR2 of the sealing layer M to soften the resin composition and gradually enter between the semiconductor elements. At this time, the surface of the sealing sheet T is corrected to be flat by the annular plate 26b and the circular plate 26a. When the predetermined time passes and the resin composition is semi-hardened, the annular plate 26b and the circular plate 26a are raised to release the pressurization and heating.
此外,於此時點,密封層M處於沒有完全硬化的暫時壓接狀態。當密封片T的暫時壓接完成時,第1搬送機構21返回載置台2側的待機位置。 Further, at this point, the sealing layer M is in a temporarily crimped state which is not completely hardened. When the temporary pressure bonding of the sealing sheet T is completed, the first conveying mechanism 21 returns to the standby position on the mounting table 2 side.
暫時壓接有密封片T的半導體基板W藉由第2搬送機構24吸附保持,而被搬送到第2保持台45。 The semiconductor substrate W to which the sealing sheet T is temporarily pressure-bonded is sucked and held by the second transfer mechanism 24, and is transported to the second holding stage 45.
當半導體基板W被載置於第2保持台45時,第2搬送機構24即上升而返回第1保持台23側。第2保持台45係在吸附保持著半導體基板W的狀態下,移動到上殼體46A的下方。 When the semiconductor substrate W is placed on the second holding stage 45, the second transfer mechanism 24 rises and returns to the first holding stage 23 side. The second holding stage 45 moves to the lower side of the upper casing 46A in a state in which the semiconductor substrate W is adsorbed and held.
如圖12所示,上殼體46A的下端下降到抵接於下殼體46B的位置。亦即,形成減壓室46。然後, 將減壓室46內減壓。接著,如圖13所示,使按壓板59下降以將密封片T按壓及加熱而固定壓接於半導體基板W。於此時點,密封層M處於尚未完全硬化的狀態。 As shown in FIG. 12, the lower end of the upper casing 46A is lowered to a position abutting against the lower casing 46B. That is, the decompression chamber 46 is formed. then, The pressure inside the decompression chamber 46 was reduced. Next, as shown in FIG. 13, the pressing plate 59 is lowered to press and heat the sealing sheet T, and is fixedly pressed against the semiconductor substrate W. At this point, the sealing layer M is in a state in which it has not been completely hardened.
當固定壓接完成,使減壓室46內返回大氣壓而將上殼體46A敞開。下殼體46B連同第2保持台45一起返回基板的接遞位置。固定壓接有密封片T的半導體基板W被剝離了第1剝離襯墊S1。以上述方式,完成了密封片T貼附於半導體基板W之一連串的動作。 When the fixed crimping is completed, the inside of the decompression chamber 46 is returned to the atmospheric pressure to open the upper casing 46A. The lower casing 46B, together with the second holding stage 45, returns to the delivery position of the substrate. The semiconductor substrate W to which the sealing sheet T is fixedly pressed is peeled off from the first release liner S1. In the above manner, the operation of attaching the sealing sheet T to one of the semiconductor substrates W is completed.
根據上述實施例裝置,由於是在半導體基板W僅使密封片T的外周區域AR1的密封層M先半硬化,故即便之後將內側區域AR2的密封層M加熱以使其軟化而按壓,也不會有形成密封層M的樹脂組成物從半導體基板W被擠出的情況,因此,可使保持半導體基板W之第1保持台23等的污染受到抑制。 According to the apparatus of the above-described embodiment, since only the sealing layer M of the outer peripheral region AR1 of the sealing sheet T is semi-cured in the semiconductor substrate W, even if the sealing layer M of the inner region AR2 is heated to be softened and pressed, it is not pressed. Since the resin composition forming the sealing layer M is extruded from the semiconductor substrate W, contamination of the first holding stage 23 or the like holding the semiconductor substrate W can be suppressed.
此外,本發明也可採用以下的形態實施。 Further, the present invention can also be implemented in the following aspects.
(1)上述實施例中,以取代設置於第1搬送機構21的環狀板26b而言,亦可使內設加熱器的輥沿著密封片T的外周區域AR1轉動。 (1) In the above embodiment, instead of the annular plate 26b provided in the first conveying mechanism 21, the roller in which the heater is placed may be rotated along the outer peripheral region AR1 of the sealing sheet T.
例如,如圖14及圖15所示,具備經由軸承65繞著第1搬送機構21的支軸進行升降及旋轉的轂(boss)部66,並且在該轂部55設置朝中心沿徑向延伸的3根支持臂67。輥68係以可經由擺動臂69上下移動的方式裝設於各支持臂67的下端。此外,輥68係藉彈簧朝下偏置。 For example, as shown in FIG. 14 and FIG. 15, a boss portion 66 that moves up and down around a support shaft of the first transport mechanism 21 via a bearing 65 is provided, and the hub portion 55 is provided to extend radially toward the center. 3 support arms 67. The roller 68 is attached to the lower end of each of the support arms 67 so as to be movable up and down via the swing arm 69. In addition, the roller 68 is biased downward by the spring.
此構成為,使經加熱的輥68在與半導體基板W重疊的密封片T的外周區域AR1上轉動,以將樹脂組成物加壓及加熱並使其半硬化後,藉由圓形板26a將內側區域AR2的樹脂組成物加壓及加熱以使其半硬化。 In this configuration, the heated roller 68 is rotated on the outer peripheral region AR1 of the sealing sheet T overlapping the semiconductor substrate W to pressurize and heat the resin composition and semi-harden it, and then the circular plate 26a The resin composition of the inner region AR2 is pressurized and heated to be semi-hardened.
(2)上述各實施例裝置中,亦可為在具有透過性的構件貼附擴散片而構成環狀板26b,並於其內部具備紅外線LED之構成。 (2) In the apparatus of each of the above embodiments, the annular plate 26b may be formed by attaching a diffusion sheet to a member having transparency, and an infrared LED may be provided inside.
亦即,一邊利用環狀板26b按壓密封片T,一邊利用內部的紅外線LED將紅外線照射到密封層M以進行加熱。 In other words, while the sealing sheet T is pressed by the annular plate 26b, infrared rays are irradiated to the sealing layer M by the internal infrared LED to be heated.
(3)上述各實施例裝置中,半導體基板W的形狀不限定為圓形。因此,半導體基板W亦可為正方形或長方形等四角形。 (3) In the devices of the above embodiments, the shape of the semiconductor substrate W is not limited to a circular shape. Therefore, the semiconductor substrate W may have a square shape such as a square or a rectangle.
在半導體基板W為四角形的情況下,與上述各實施例同様,只要藉由四角形的環狀板以及於其內側藉由四角形的板,來將外周區域與內側區域分別加壓及加熱即可。 In the case where the semiconductor substrate W has a square shape, as in the above-described respective embodiments, the outer peripheral region and the inner region may be respectively pressurized and heated by a quadrangular annular plate and a rectangular plate on the inner side thereof.
又,亦可構成為以內設有加熱器的板,依序被覆四角形的側緣以進行加壓及加熱。 Further, a plate having a heater therein may be configured to sequentially cover the side edges of the square to pressurize and heat.
(4)上述各實施例裝置中,亦可設成僅藉由加熱密封片T並使其軟化而貼附於半導體基板W。亦即,根據構成密封層M之樹脂組成物的特性或加熱溫度等的設定條件,亦可不用將密封片加壓,而僅藉由加熱以使密封層M軟化而使樹脂組成物進入半導體元件C彼此之間來進行貼附。 (4) In the apparatus of each of the above embodiments, the sealing sheet T may be heated and softened to be attached to the semiconductor substrate W. In other words, depending on the characteristics of the characteristics of the resin composition constituting the sealing layer M, the heating temperature, and the like, it is also possible to introduce the resin composition into the semiconductor element by merely heating by heating to seal the layer M. C is attached to each other.
(5)上述各實施例裝置中,亦可為在密封片T由收納容器3經由襯墊剝離機構22被搬送到第1保持台23前,先使分別埋設於圓形板26a及環狀板26b的加熱器29a、29b作動,以預備加熱到既定溫度。 (5) In the apparatus of each of the above embodiments, before the sealing sheet T is transported to the first holding stage 23 via the spacer peeling mechanism 22, the sealing sheet T may be embedded in the circular plate 26a and the annular plate, respectively. The heaters 29a, 29b of 26b are actuated to be preheated to a predetermined temperature.
於此情況,可縮短各板26a、26b到達設定溫度而穩定的等待時間。換言之,可節省第1保持台23上加熱器的加熱溫度達穩定的等待時間。 In this case, the waiting time for each of the plates 26a and 26b to reach the set temperature can be shortened. In other words, the heating time of the heater on the first holding stage 23 can be saved to a stable waiting time.
(6)上述各實施例中,雖是以第1搬送機構進行密封片T之外周區域AR1與內側區域AR2的加壓及加熱,但不受限於該構成。因此,亦可為藉由第1搬送機構21使密封片T與第1保持台23上的半導體基板W重疊後,使該第1搬送機構21退避,利用僅具備圓形板26a的裝置和僅具備環狀板26b的裝置,使在密封片T的外周區域AR1與內側區域AR2依序形成該密封層M的樹脂組成物半硬化。 (6) In the above embodiments, the first transfer mechanism pressurizes and heats the outer peripheral region AR1 and the inner region AR2 of the sealing sheet T, but the configuration is not limited thereto. Therefore, after the sealing sheet T and the semiconductor substrate W on the first holding stage 23 are overlapped by the first conveying mechanism 21, the first conveying mechanism 21 can be retracted, and the apparatus including only the circular plate 26a and only the device can be used. The apparatus having the annular plate 26b semi-hardens the resin composition in which the sealing layer M is sequentially formed in the outer peripheral region AR1 and the inner region AR2 of the sealing sheet T.
如上所述,本發明適於可以良好精度將密封片貼附於半導體基板。 As described above, the present invention is suitable for attaching a sealing sheet to a semiconductor substrate with good precision.
21‧‧‧第1搬送機構 21‧‧‧1st transport agency
23‧‧‧第1保持台 23‧‧‧1st holding station
26a‧‧‧圓形板 26a‧‧‧round plate
26b‧‧‧環狀板 26b‧‧‧ring plate
29a‧‧‧加熱器 29a‧‧‧heater
29b‧‧‧加熱器 29b‧‧‧heater
T‧‧‧密封片 T‧‧‧ Sealing film
W‧‧‧半導體基板 W‧‧‧Semiconductor substrate
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JP2013095331A JP2014216606A (en) | 2013-04-30 | 2013-04-30 | Sealing sheet sticking method and sealing sheet sticking device |
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JPH01300531A (en) * | 1988-05-30 | 1989-12-05 | Seikosha Co Ltd | Sealing method for semiconductor element |
JP2000349114A (en) * | 1999-06-07 | 2000-12-15 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
JP2001156088A (en) * | 1999-11-26 | 2001-06-08 | Fujikura Ltd | Semiconductor device and method for manufacture thereof |
JP4724988B2 (en) * | 2001-09-05 | 2011-07-13 | ソニー株式会社 | Method of manufacturing a pseudo wafer for manufacturing a multichip module |
JP5720245B2 (en) * | 2010-12-28 | 2015-05-20 | 富士通株式会社 | Multilayer wafer, resin sealing method, and semiconductor device manufacturing method |
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