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TW201409168A - Radiation-sensitive resin composition, resist pattern forming method, radiation-sensitive acid generator, compound and method for producing compound - Google Patents

Radiation-sensitive resin composition, resist pattern forming method, radiation-sensitive acid generator, compound and method for producing compound Download PDF

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TW201409168A
TW201409168A TW102123211A TW102123211A TW201409168A TW 201409168 A TW201409168 A TW 201409168A TW 102123211 A TW102123211 A TW 102123211A TW 102123211 A TW102123211 A TW 102123211A TW 201409168 A TW201409168 A TW 201409168A
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Hayato Namai
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Jsr Corp
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Abstract

The present invention is a radiation-sensitive resin composition, which contains an acid-cleavable group-containing polymer, a radiation-sensitive acid generator and a solvent, and wherein the radiation-sensitive acid generator contains a compound represented by formula (1). In formula (1), L represents at least one moiety that is selected from the group consisting of -COO-*, -SO2O-, -CONRA-, -O- and -S-, or a single bond; and * represents a binding site bonded with G. In formula (1), it is preferable that: L represents at least one moiety that is selected from the group consisting of -COO-*, -SO2O-, -CONRA-, -O- and -S-; RA represents a hydrogen atom or a monovalent hydrocarbon group having 1-20 carbon atoms; R1 represents a substituted or unsubstituted alkanediyl group having 1-10 carbon atoms, wherein a fluorine atom is not bonded to the carbon atom that is adjacent to SO3 -; and G represents a group that contains an alicyclic structure having 3-30 carbon atoms.

Description

感放射線性樹脂組成物、抗蝕圖型形成方法、感放射線性酸產生劑、化合物及化合物之製造方法 Radiation-sensitive resin composition, resist pattern forming method, radiation-sensitive acid generator, compound and compound manufacturing method

本發明係關於感放射線性樹脂組成物、抗蝕圖型形成方法、感放射線性酸產生劑、化合物及化合物之製造方法。 The present invention relates to a radiation sensitive resin composition, a resist pattern forming method, a radiation sensitive acid generator, a compound, and a method for producing the compound.

於藉由微影術之微細加工中所用之感放射線性樹脂組成物,係藉由ArF準分子雷射光、KrF準分子雷射光等之遠紫外線、電子束等荷帶電粒子束等之照射而於曝光部中產生酸,藉由以該酸作為觸媒之化學反應,使曝光部與未曝光部對顯像液之溶解速度產生差異,而於基板上形成抗蝕圖型。 The radiation-sensitive resin composition used in the microfabrication by lithography is irradiated by a far-ultraviolet light such as ArF excimer laser light, KrF excimer laser light, or a charged particle beam such as an electron beam. An acid is generated in the exposed portion, and a chemical reaction between the exposed portion and the unexposed portion causes a difference in the dissolution rate of the developing solution with the acid as a catalyst to form a resist pattern on the substrate.

對於該感放射線性樹脂組成物,隨著加工技術之微細化,而要求提高解像性、抗蝕圖型之剖面形狀之矩形性。對於此要求,已檢討組成物中所用之聚合物、酸產生劑、其他成分之種類或分子構造,進而針對其組合加以詳細檢討(參照日本特開平11-125907號公報、日本特開平8-146610號公報及日本特開2000-298347號公 報)。 With regard to the radiation-sensitive resin composition, it is required to improve the resolution and the rectangular shape of the cross-sectional shape of the resist pattern as the processing technique is refined. In response to this request, the types, molecular structures, and molecular structures of the polymers, acid generators, and other components used in the composition have been reviewed, and the combinations thereof have been reviewed in detail (see Japanese Patent Laid-Open No. Hei 11-125907, Japanese Patent Application No. Hei 8-146610). Bulletin and Japan Unexamined 2000-298347 Newspaper).

其中,於已越加進行抗蝕圖型之微細化之現今,解像性或剖面形狀之矩形性尚未充分滿意。且,亦要求顯示抗蝕圖型之線寬偏差之線寬粗糙度(LWR)性能優異,進而為了提高製程安定性,亦要求提高焦點深度。然而,上述過去之感放射線性樹脂組成物並無法滿足該等要求。 Among them, the resolution of the resist pattern or the cross-sectional shape of the cross-sectional shape has not been sufficiently satisfactory. Further, it is also required to exhibit excellent line width roughness (LWR) performance of the line width deviation of the resist pattern, and further increase the depth of focus in order to improve process stability. However, the above-mentioned past radiation-sensitive resin composition cannot satisfy these requirements.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開平11-125907號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 11-125907

[專利文獻2]日本特開平8-146610號公報 [Patent Document 2] Japanese Patent Laid-Open No. Hei 8-146610

[專利文獻3]日本特開2000-298347號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2000-298347

本發明係基於以上情況而完成者,其目的係提供一種LWR性能、解像性、剖面形狀之矩形性及焦點深度優異之感放射線性樹脂組成物。 The present invention has been made in view of the above circumstances, and an object thereof is to provide a radiation-sensitive resin composition having excellent LWR performance, resolution, rectangular shape of a cross-sectional shape, and excellent depth of focus.

用以解決上述課題之發明為一種感放射線性樹脂組成物,其含有含酸解離性基之聚合物(以下亦稱為「[A]聚合 物」)、感放射線性酸產生劑(以下亦稱為「[B]酸產生劑」)、及溶劑(以下亦稱為「[C]溶劑」),上述感放射線性酸產生劑包含以下述式(1)表示之化合物,【化1】G-L-R1-SO3 - M+ (1)(式(1)中,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種或單鍵,RA為氫原子或碳數1~20之1價烴基,*表示與G之鍵結部位,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種時,R1為鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為含碳數3~30之脂環構造之基、含碳數6~30之芳香環構造之基、含碳數3~30之雜環構造之基或含碳數2~20之-NRBRC之基,L為單鍵時,R1為單鍵或鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為碳數7~30之多環之脂環式烴基或含碳數2~20之-NRBRC之基,RB及RC各獨立為碳數1~10之烷基或碳數3~10之環烷基,或表示該等基相互結合與該等所鍵結之氮原子一起 構成之環員數3~20之環構造,M+為1價之放射線分解性鎓陽離子)。 The invention for solving the above problems is a radiation-sensitive resin composition containing an acid-dissociable group-containing polymer (hereinafter also referred to as "[A] polymer") and a radiation-sensitive acid generator (hereinafter also referred to as The "[B] acid generator") and the solvent (hereinafter also referred to as "[C] solvent"), the radiation-sensitive acid generator includes a compound represented by the following formula (1), [Chem. 1] GLR 1 -SO 3 - M + (1) (In the formula (1), L is at least selected from the group consisting of -COO-*, -SO 2 O-, -CONR A -, -O-, and -S- One or a single bond, R A is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, * represents a bonding site with G, and L is composed of -COO-*, -SO 2 O-, -CONR A -, - When at least one selected from the group consisting of O- and -S-, R 1 is a substituted or unsubstituted carbon number of 1 to 10 adjacent to an unbonded fluorine atom on a carbon atom of SO 3 - G, a group having an alicyclic structure having a carbon number of 3 to 30, a base having an aromatic ring structure of 6 to 30 carbon atoms, a heterocyclic structure having a carbon number of 3 to 30, or a carbon number of 2 to 20 -NR B R C group, when L is a single bond, R 1 is a single bond or a bond to a fluorine atom adjacent to a carbon atom of SO 3 - Substituted or unsubstituted alkanediyl having 1 to 10 carbon atoms, G is a polycyclic alicyclic hydrocarbon group having 7 to 30 carbon atoms or a NR B R C group having 2 to 20 carbon atoms, R B and R C is independently an alkyl group having 1 to 10 carbon atoms or a cycloalkyl group having 3 to 10 carbon atoms, or a ring number of 3 to 20 which is bonded to the nitrogen atoms bonded to the groups. In the ring structure, M + is a monovalent radiation-decomposable cation cation).

本發明之抗蝕圖型形成方法具有下述步驟:使用該感放射線性樹脂組成物,形成抗蝕膜之步驟,使上述抗蝕膜曝光之步驟,及使上述經曝光之抗蝕膜顯像之步驟。 The resist pattern forming method of the present invention has the steps of: forming a resist film using the radiation sensitive resin composition, exposing the resist film, and developing the exposed resist film The steps.

本發明之感放射線性酸產生劑係由以下述式(1)表示之化合物所組成,【化2】G-L-R1-SO3 - M+ (1)(式(1)中,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種或單鍵,RA為氫原子或碳數1~20之1價烴基,*表示與G之鍵結部位,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種時,R1為鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為含碳數3~30之脂環構造之基、含碳數6~30之芳香環構造之基、含碳數3~30之雜環構造之基或含碳數2~20之-NRBRC之基,L為單鍵時,R1為單鍵或鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為碳數7~30之多環之脂環式烴基或含碳數2~20之-NRBRC之基, RB及RC各獨立為碳數1~10之烷基或碳數3~10之環烷基,或表示該等基相互結合與該等所鍵結之氮原子一起構成之環員數3~20之環構造,M+為1價之放射線分解性鎓陽離子)。 Sense of the present invention radiation-sensitive acid generator based compound represented by the following formula of (1) the composition of [2] GLR 1 -SO 3 - in the M + (1) (Formula (1), L by -COO At least one or a single bond selected from the group consisting of -*, -SO 2 O-, -CONR A -, -O-, and -S-, and R A is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. * indicates a bonding site with G, and L is at least one selected from the group consisting of -COO-*, -SO 2 O-, -CONR A -, -O-, and -S-, and R 1 is adjacent a substituted or unsubstituted alkanediyl group having 1 to 10 carbon atoms which is not bonded to a fluorine atom at a carbon atom of SO 3 - , and a carbon group having a carbon number of 3 to 30 and having a carbon number of 6 a base of an aromatic ring structure of ~30, a group of a heterocyclic structure having a carbon number of 3 to 30 or a group of -NR B R C having a carbon number of 2 to 20, and when L is a single bond, R 1 is a single bond or adjacency a substituted or unsubstituted alkanediyl group having 1 to 10 carbon atoms which is not bonded to a fluorine atom at a carbon atom of SO 3 - , and G is an alicyclic hydrocarbon group having a carbon number of 7 to 30 or a carbon number 2 to 20 -NR B R C group, R B and R C are each independently a C 1-10 alkyl group or a C 3-10 cycloalkyl group, or indicate that the groups are bonded to each other Bonded The number of ring membered ring structure of 3 to 20 constitutes together with the atoms, M + is a monovalent cation of radiation decomposable).

本發明之化合物係以下述式(1)表示,【化3】G-L-R1-SO3 - M+ (1)(式(1)中,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種或單鍵,RA為氫原子或碳數1~20之1價烴基,*表示與G之鍵結部位,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種時,R1為鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為含碳數3~30之脂環構造之基、含碳數6~30之芳香環構造之基、含碳數3~30之雜環構造之基或含碳數2~20之-NRBRC之基,L為單鍵時,R1為單鍵或鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為碳數7~30之多環之脂環式烴基或含碳數2~20之-NRBRC之基,RB及RC各獨立為碳數1~10之烷基或碳數3~10之環烷基,或表示該等基相互結合與該等所鍵結之氮原子一起構成之環員數3~20之環構造, M+為1價之放射線分解性鎓陽離子)。 The compound of the present invention is represented by the following formula (1) : G 3 1 -SO 3 - M + (1) (in the formula (1), L is -COO-*, -SO 2 O-, - At least one or a single bond selected from the group consisting of CONR A -, -O-, and -S-, and R A is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, and * represents a bonding site with G, L When at least one selected from the group consisting of -COO-*, -SO 2 O-, -CONR A -, -O-, and -S-, R 1 is a bond adjacent to a carbon atom of SO 3 - a substituted or unsubstituted alkanediyl group having 1 to 10 carbon atoms, a carbon atom having a carbon number of 3 to 30, a base having an aromatic ring structure having a carbon number of 6 to 30, and a a group having a carbon number of 3 to 30 or a group having a carbon number of 2 to 20 -NR B R C. When L is a single bond, R 1 is a single bond or a bond adjacent to a carbon atom of SO 3 - a substituted or unsubstituted alkanediyl group having 1 to 10 carbon atoms, a carbon atom of 7 to 30 or a NR B R C having a carbon number of 2 to 20 The radicals, R B and R C are each independently a C 1-10 alkyl group or a C 3-10 cycloalkyl group, or a ring member which is bonded to the bonded nitrogen atoms. Number 3~20 ring Made, M + is a monovalent cation of radiation decomposable).

本發明之化合物之製造方法為具有下述步驟之以下述式(1)表示之化合物之製造方法:使以下述式(i-a)表示之有機鹵化物與以E2SO3表示之亞硫酸鹽反應,獲得以下述式(i-b)表示之磺酸鹽之步驟,及使上述磺酸鹽與以MY表示之鎓鹽反應之步驟, (式(i-a)、(i-b)及(1)中,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種或單鍵,RA為氫原子或碳數1~20之1價烴基,*表示與G之鍵結部位,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種時,R1為鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為含碳數3~30之脂環構造之基、含碳數6~30之芳香環構造之基、含碳數3~30之雜環構造之基或含碳數2~20之-NRBRC之基,L為單鍵時,R1為單鍵或鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G 為碳數7~30之多環之脂環式烴基或含碳數2~20之-NRBRC之基,RB及RC各獨立為碳數1~10之烷基或碳數3~10之環烷基,或表示該等基相互結合與該等所鍵結之氮原子一起構成之環員數3~20之環構造,X為鹵原子,E+為鹼金屬離子,M+為1價放射線分解性鎓陽離子,Y-為1價陰離子)。 The method for producing a compound of the present invention is a method for producing a compound represented by the following formula (1) having the following steps: reacting an organic halide represented by the following formula (ia) with a sulfite represented by E 2 SO 3 a step of obtaining a sulfonate represented by the following formula (ib), and a step of reacting the above sulfonate with an onium salt represented by MY, (In the formulas (ia), (ib) and (1), L is at least one selected from the group consisting of -COO-*, -SO 2 O-, -CONR A -, -O-, and -S- Or a single bond, R A is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, * represents a bonding site with G, and L is a group of -COO-*, -SO 2 O-, -CONR A -, -O When at least one selected from the group consisting of - and -S-, R 1 is a substituted or unsubstituted alkanediyl group having 1 to 10 carbon atoms adjacent to an unbonded fluorine atom on a carbon atom of SO 3 - , G is a base of an alicyclic structure having a carbon number of 3 to 30, a base of an aromatic ring having a carbon number of 6 to 30, a base of a heterocyclic structure having a carbon number of 3 to 30, or a carbon number of 2 to 20 - NR B R C of the group, when L is a single bond, R 1 is a single bond or adjacent to the SO 3 - unbound by the junction of the fluorine atom on the carbon atom of a substituted or unsubstituted alkanediyl group having a carbon number of 1 to 10 , G is an alicyclic hydrocarbon group having a carbon number of 7 to 30 or a NR B R C group having a carbon number of 2 to 20, and R B and R C are each independently an alkyl group having 1 to 10 carbon atoms or carbon. a cycloalkyl group of 3 to 10, or a ring structure of 3 to 20 ring members which are bonded to the nitrogen atoms bonded to the groups, X is a halogen atom, and E + is an alkali metal ion. M + is a monovalent radiation Decomposable cation, Y - is a monovalent anion).

此處,所謂「有機基」意指含至少1個碳原子之基。 Here, the "organic group" means a group containing at least one carbon atom.

依據本發明之感放射線性樹脂組成物及抗蝕圖型形成方法,可發揮廣的焦點深度,同時可形成LWR小、具有高解像度、剖面形狀之矩形性優異之抗蝕圖型。本發明之感放射線性酸產生劑可較好地使用作為該感放射線性樹脂組成物之成分。本發明之化合物可較好地使用作為該感放射線性酸產生劑。依據本發明之化合物之製造方法,可簡易且收率佳地製造該化合物。據此,該等可較好地使用於今後進行更微細化之半導體裝置中之製造製程等中。 According to the radiation sensitive resin composition and the resist pattern forming method of the present invention, a wide focus depth can be exhibited, and a resist pattern having a small LWR, a high resolution, and a rectangular shape with a cross-sectional shape can be formed. The radiation-sensitive acid generator of the present invention can be preferably used as a component of the radiation-sensitive resin composition. The compound of the present invention can be preferably used as the radiation-sensitive acid generator. According to the method for producing a compound of the present invention, the compound can be produced simply and in good yield. According to this, these can be preferably used in a manufacturing process or the like in a semiconductor device which is further miniaturized in the future.

〈感放射線性樹脂組成物〉 <Inductive Radiation Resin Composition>

該感放射線性樹脂組成物含有[A]聚合物、[B]酸產生劑及[C]溶劑。且,該感放射線性樹脂組成物亦可含有[D][B]感放射線性酸產生劑以外之感放射線性酸產生劑(以下亦稱為「[D]其他酸產生劑」)、[E]含氮原子之化合物及/或[F]含氟原子之聚合物作為較佳成分,在不損及本發明效果之範圍內,亦可含有其他任意成分。以下,針對各成分加以說明。 The radiation sensitive resin composition contains a [A] polymer, a [B] acid generator, and a [C] solvent. Further, the radiation sensitive resin composition may contain a radioactive acid generator other than the [D][B] radiation-sensitive acid generator (hereinafter also referred to as "[D] other acid generator"), [E The compound containing a nitrogen atom and/or the polymer of [F] fluorine atom may be contained as a preferable component, and may contain other arbitrary components within the range which does not impair the effect of this invention. Hereinafter, each component will be described.

〈[A]聚合物〉 <[A] Polymer>

[A]聚合物為含有酸解離性基之聚合物。依據該感放射線性樹脂組成物,藉由放射線之照射使曝光部之[A]聚合物之酸解離性基解離,使曝光部與未曝光部對顯像液之溶解性產生差異,結果,可形成抗蝕圖型。所謂「酸解離性基」意指取代羧基、羥基等之氫原子之基,且藉酸之作用解離之基。[A]聚合物只要含有酸解離性基即無特別限制,可在主鏈、側鏈、末端等中含有。[A]聚合物除含有酸解離性基之構造單位(以下亦稱為「構造單位(I)」)以外,亦可具有後述之以下述式(3)表示之構造單位(II)、後述之以下述式(4)表示之構造單位(III)、含醯胺基之構造單位(IV)及上述構造單位(I)~(IV)以外之其他構造單位。[A]聚合物亦可具有1種或2種以上之各構造單位。以下,針對各構造單位加以 說明。 [A] The polymer is a polymer containing an acid dissociable group. According to the radiation sensitive resin composition, the acid dissociable group of the [A] polymer in the exposed portion is dissociated by irradiation of radiation, and the solubility of the exposed portion and the unexposed portion to the developing solution is different. A resist pattern is formed. The "acid dissociable group" means a group which substitutes a hydrogen atom of a carboxyl group, a hydroxyl group or the like and which is dissociated by the action of an acid. The [A] polymer is not particularly limited as long as it contains an acid-dissociable group, and may be contained in a main chain, a side chain, a terminal or the like. [A] The polymer may have a structural unit (II) represented by the following formula (3), which will be described later, in addition to a structural unit containing an acid-dissociable group (hereinafter also referred to as "structural unit (I)"). The structural unit (III) represented by the following formula (4), the structural unit (IV) containing a guanamine group, and other structural units other than the above structural units (I) to (IV). The [A] polymer may have one or two or more structural units. Hereinafter, for each structural unit Description.

[構造單位(I)] [structural unit (I)]

構造單位(I)為含酸解離性基之構造單位。構造單位(I)列舉為例如以下述式(2-1)表示之構造單位(以下亦稱為「構造單位(I-1)」)、以下述式(2-2)表示之構造單位(以下亦稱為「構造單位(I-2)」)等。 The structural unit (I) is a structural unit containing an acid-dissociable group. The structural unit (I) is, for example, a structural unit represented by the following formula (2-1) (hereinafter also referred to as "structural unit (I-1)"), and a structural unit represented by the following formula (2-2) (hereinafter) Also known as "structural unit (I-2)").

上述式(2-1)中,R2為氫原子、氟原子、甲基或三氟甲基。Y1為1價之酸解離性基。 In the above formula (2-1), R 2 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. Y 1 is a monovalent acid dissociable group.

上述式(2-2)中,R3為氫原子或甲基。Y2為1價之酸解離性基。 In the above formula (2-2), R 3 is a hydrogen atom or a methyl group. Y 2 is a monovalent acid dissociable group.

上述R2,就獲得構造單位(I-1)之單體之共聚合性之觀點而言,較好為氫原子、甲基,更好為甲基。 From the viewpoint of obtaining the copolymerizability of the monomer of the structural unit (I-1), R 2 is preferably a hydrogen atom or a methyl group, more preferably a methyl group.

以上述Y1表示之1價酸解離性基較好為以下述式(Y-1)表示之基。 The monovalent acid dissociable group represented by the above Y 1 is preferably a group represented by the following formula (Y-1).

上述式(Y-1)中,Re1為碳數1~10之1價鏈狀烴基或碳數3~20之脂環式烴基。Re2及Re3各獨立表示碳數1~10之1價鏈狀烴基或碳數3~20之1價脂環式烴基,或該等基相互結合與該等所鍵結之碳原子一起構成之環碳數3~20之脂環構造。 In the above formula (Y-1), R e1 is a monovalent chain hydrocarbon group having 1 to 10 carbon atoms or an alicyclic hydrocarbon group having 3 to 20 carbon atoms. R e2 and R e3 each independently represent a monovalent chain hydrocarbon group having 1 to 10 carbon atoms or a monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms, or the groups are bonded to each other to bond with the carbon atoms bonded thereto. The ring has a carbon number of 3 to 20 alicyclic structure.

以上述Re1、Re2及Re3表示之碳數1~10之1價鏈狀烴基列舉為例如:甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、第三丁基、正戊基等烷基;乙烯基、丙烯基、丁烯基、戊烯基等烯基;乙炔基、丙炔基、丁炔基、戊炔基等炔基等。 The monovalent chain hydrocarbon group having 1 to 10 carbon atoms represented by the above R e1 , R e2 and R e3 is exemplified by methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, and An alkyl group such as dibutyl, tert-butyl or n-pentyl; an alkenyl group such as a vinyl group, a propenyl group, a butenyl group or a pentenyl group; an alkynyl group such as an ethynyl group, a propynyl group, a butynyl group or a pentynyl group; Wait.

該等中,較佳為烷基,更好為碳數1~4之烷基,又更好為甲基、乙基、異丙基,最好為乙基。 Among these, an alkyl group is preferred, and an alkyl group having 1 to 4 carbon atoms is more preferred, and more preferably a methyl group, an ethyl group or an isopropyl group, and most preferably an ethyl group.

以上述Re1、Re2及Re3表示之碳數3~20之1價脂環式烴基列舉為例如:環丙基、環丁基、環戊基、環己基、環辛基等單環之環烷基;降冰片基、金剛烷基、三環癸基、四環十二烷基等多環之環烷基;環丙烯基、環丁烯基、環戊烯基、環己烯基等單環之環烯基; 降冰片烯基、三環癸烯基等多環之環烯基等。 The monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms represented by the above R e1 , R e2 and R e3 is exemplified by a monocyclic ring such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group or a cyclooctyl group. a cycloalkyl group; a polycyclic cycloalkyl group such as a norbornyl group, an adamantyl group, a tricyclodecanyl group or a tetracyclododecyl group; a cyclopropenyl group, a cyclobutenyl group, a cyclopentenyl group, a cyclohexenyl group, etc. a monocyclic cycloalkenyl group; a polycyclic cycloalkenyl group such as a norbornene group or a tricyclodecenyl group; and the like.

該等中,以單環之環烷基、多環之環烷基較佳,更好為環戊基、環己基、降冰片基、金剛烷基。 Among these, a monocyclic cycloalkyl group or a polycyclic cycloalkyl group is preferred, and more preferably a cyclopentyl group, a cyclohexyl group, a norbornyl group or an adamantyl group.

上述該等基相互結合與該等所鍵結之碳原子一起構成所表示之環碳數3~20之脂環構造列舉為例如:環丙烷構造、環丁烷構造、環戊烷構造、環己烷構造、環辛烷構造等單環之環烷構造;降冰片烷構造、金剛烷構造、三環癸烷構造、四環十二烷構造等多環之環烷構造;環丙烯構造、環丁烯構造、環戊烯構造、環己烯構造、環辛烯構造等單環之環烯構造;降冰片烯構造、三環癸烯構造、四環十二碳烯構造等多環之環烯構造等。 The alicyclic structure in which the above-mentioned groups are bonded to each other and the carbon atoms to be bonded together constitutes a ring carbon number of 3 to 20 is exemplified by a cyclopropane structure, a cyclobutane structure, a cyclopentane structure, and a cyclohexane. a monocyclic naphthenic structure such as an alkane structure or a cyclooctane structure; a polycyclic naphthenic structure such as a norbornane structure, an adamantane structure, a tricyclodecane structure or a tetracyclododecane structure; a cyclopropene structure; a monocyclic cycloolefin structure such as an ene structure, a cyclopentene structure, a cyclohexene structure, or a cyclooctene structure; a polycyclic cycloolefin structure such as a norbornene structure, a tricyclic terpene structure, or a tetracyclododecene structure; Wait.

該等中,以單環之環烷構造、多環之環烷構造較佳,更好為碳數5~8之單環之環烷構造、碳數7~12之多環之環烷構造,又更好為環戊烷構造、環己烷構造、環辛烷構造、降冰片烷構造、金剛烷構造,最好為環戊烷構造、金剛烷構造。 Among these, a monocyclic naphthenic structure and a polycyclic naphthenic structure are preferred, and a cycloalkane structure having a single ring of 5 to 8 carbon atoms and a cycloalkane having a polystyrene having a carbon number of 7 to 12 are more preferable. Further, it is preferably a cyclopentane structure, a cyclohexane structure, a cyclooctane structure, a norbornane structure, or an adamantane structure, and is preferably a cyclopentane structure or an adamantane structure.

上述以(Y-1)表示之基較好表示Re1為碳數1~10之1價鏈狀烴基,且Re2及Re3相互結合與該等所鍵結之碳原子一起構成之環碳數3~20之脂環構造,更好表示Re1為碳數1~10之烷基,且Re2及Re3相互結合與該等所鍵結之碳原子一起構成之環碳數3~20之環烷構造,更好表示Re1為碳數1~4之烷基,且Re2及Re3相互結合與 該等所鍵結之碳原子一起構成之環碳數5~8之單環之環烷構造或環碳數7~12之多環環烷構造,最好為1-乙基-1-環戊基、2-乙基-2-金剛烷基。 The group represented by (Y-1) above preferably represents a ring-shaped hydrocarbon group in which R e1 is a monovalent chain hydrocarbon group having 1 to 10 carbon atoms, and R e2 and R e3 are bonded to each other and the carbon atoms bonded thereto. The alicyclic structure of 3 to 20 preferably indicates that R e1 is an alkyl group having 1 to 10 carbon atoms, and R e2 and R e3 are bonded to each other to form a ring carbon number of 3 to 20 together with the carbon atoms bonded thereto. The naphthenic structure further preferably represents that R e1 is an alkyl group having 1 to 4 carbon atoms, and R e2 and R e3 are bonded to each other to form a ring of 5 to 8 ring carbon atoms together with the carbon atoms bonded thereto. The cycloalkane structure or the polycyclic naphthenic structure having a ring carbon number of 7 to 12 is preferably 1-ethyl-1-cyclopentyl or 2-ethyl-2-adamantyl.

上述R3,就獲得構造單位(I-2)之單體之共聚合性之觀點而言,較好為氫原子。 The above R 3 is preferably a hydrogen atom from the viewpoint of obtaining copolymerization properties of the monomer of the structural unit (I-2).

以上述Y2表示之1價酸解離性基較好為以下述式(Y-2)表示之基。 The monovalent acid dissociable group represented by the above Y 2 is preferably a group represented by the following formula (Y-2).

上述式(Y-2)中,Re4、Re5及Re6各獨立為氫原子、碳數1~20之1價鏈狀烴基、碳數3~20之1價脂環式烴基、碳數1~20之氧基鏈狀烴基或碳數1~20之氧基脂環式烴基。惟,並無Re4、Re5及Re6同時為氫原子之情況。 In the above formula (Y-2), R e4 , R e5 and R e6 are each independently a hydrogen atom, a monovalent chain hydrocarbon group having 1 to 20 carbon atoms, a monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms, and a carbon number. An oxy chain hydrocarbon group of 1 to 20 or an oxyalicyclic hydrocarbon group having 1 to 20 carbon atoms. However, there is no case where R e4 , R e5 and R e6 are both hydrogen atoms.

以上述Re4、Re5及Re6表示之碳數1~20之1價鏈狀烴基列舉為例如:甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、第三丁基、正戊基等烷基;乙烯基、丙烯基、丁烯基、戊烯基等烯基;乙炔基、丙炔基、丁炔基、戊炔基等炔基等。 The monovalent chain hydrocarbon group having 1 to 20 carbon atoms represented by the above R e4 , R e5 and R e6 is exemplified by a methyl group, an ethyl group, a n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, and the like. An alkyl group such as dibutyl, tert-butyl or n-pentyl; an alkenyl group such as a vinyl group, a propenyl group, a butenyl group or a pentenyl group; an alkynyl group such as an ethynyl group, a propynyl group, a butynyl group or a pentynyl group; Wait.

該等中,較好為烷基,更好為碳數1~4之烷基,又更好為甲基、乙基、正丙基,最好為甲基。 Among these, an alkyl group is preferred, and an alkyl group having 1 to 4 carbon atoms is more preferred, and more preferably a methyl group, an ethyl group or a n-propyl group, and most preferably a methyl group.

以上述Re4、Re5及Re6表示之碳數3~20之1價脂環式烴基列舉為例如與以上述Re1、Re2及Re3例示者相同之基等。 The monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms represented by the above R e4 , R e5 and R e6 is, for example, the same as those exemplified as the above R e1 , R e2 and R e3 .

該等中,以單環之環烷基、多環之環烷基較佳,更好為環戊基、環己基、降冰片基、金剛烷基。 Among these, a monocyclic cycloalkyl group or a polycyclic cycloalkyl group is preferred, and more preferably a cyclopentyl group, a cyclohexyl group, a norbornyl group or an adamantyl group.

以上述Re4、Re5及Re6表示之碳數1~20之氧基鏈狀烴基列舉為例如:甲氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、異丁氧基、第二丁氧基、第三丁氧基、正戊氧基等烷氧基;乙烯氧基、丙烯氧基、丁烯氧基、戊烯氧基等烯氧基;乙炔氧基、丙炔氧基、丁炔氧基、戊炔氧基等炔氧基等。 The oxy chain hydrocarbon group having 1 to 20 carbon atoms represented by the above R e4 , R e5 and R e6 is exemplified by a methoxy group, an ethoxy group, a n-propoxy group, an isopropoxy group, a n-butoxy group, or the like. Alkoxy group such as isobutoxy group, second butoxy group, third butoxy group or n-pentyloxy group; alkenyloxy group such as ethyleneoxy group, propyleneoxy group, butenyloxy group or pentenyloxy group; acetylene oxide An alkynyloxy group such as a propargyloxy group, a butynyloxy group or a pentynyloxy group.

該等中,較好為烷氧基,更好為碳數1~4之烷氧基,又更好為甲氧基、乙氧基、正丙氧基。 Among these, an alkoxy group is preferred, an alkoxy group having 1 to 4 carbon atoms is more preferred, and a methoxy group, an ethoxy group or a n-propoxy group is more preferred.

以上述Re4、Re5及Re6表示之碳數3~20之1價氧基脂環式烴基列舉為例如:環丙氧基、環丁氧基、還戊氧基、環己氧基、環辛氧基等單環之環烷氧基;降冰片烷氧基、金剛烷氧基、三環癸氧基、四環十二烷氧基等多環之環烷氧基;環丙烯氧基、環丁烯氧基、環戊烯氧基、環己烯氧基等單環之環烯氧基; 降冰片烯氧基、三環癸烯氧基等多環之環烯氧基等。 The monovalent oxyalicyclic hydrocarbon group having 3 to 20 carbon atoms represented by the above R e4 , R e5 and R e6 is exemplified by a cyclopropoxy group, a cyclobutoxy group, a pentyloxy group, a cyclohexyloxy group, and the like. a monocyclic cycloalkoxy group such as a cyclooctyloxy group; a polycyclic cycloalkoxy group such as a norbornyloxy group, an adamantyloxy group, a tricyclodecyloxy group or a tetracyclododecyloxy group; a cyclopropenyloxy group; a monocyclic cycloalkenyloxy group such as a cyclobutenyloxy group, a cyclopentenyloxy group or a cyclohexenyloxy group; a polycyclic cycloalkenyloxy group such as a norborneneoxy group or a tricyclodecenyloxy group;

該等中,以單環之環烷氧基、多環之環烷氧基較佳,更好為環戊氧基、環己氧基、降冰片烷氧基、金剛烷氧基。 Among these, a monocyclic cycloalkoxy group or a polycyclic cycloalkoxy group is preferred, and more preferably a cyclopentyloxy group, a cyclohexyloxy group, a norbornyloxy group or an adamantyloxy group.

以上述式(Y-2)表示之基較好為Re4、Re5及Re6為1價之鏈狀烴基、Re4及Re5為1價之鏈狀烴基且Re6為1價之氧基鏈狀烴基之基、Re4為1價之鏈狀烴基且Re5及Re6為1價之氧基鏈狀烴基之基,更好為Re4、Re5及Re6為烷基之基、Re4及Re5為烷基且Re6為烷氧基之基、Re4為烷基且Re5及Re6為烷氧基之基,更好為Re4、Re5及Re6為烷基之基,最好為第三丁基、第三戊基、第三己基、第三庚基。 The group represented by the above formula (Y-2) is preferably R e4, R e5 and R e6 is a monovalent hydrocarbon group of chain, R e4 and R e5 is a monovalent hydrocarbon group of chain 1 is oxygen and R e6 price of the a group of a chain-like hydrocarbon group, R e4 is a monovalent chain hydrocarbon group, and R e5 and R e6 are a group of a monovalent oxy chain hydrocarbon group, and more preferably R e4 , R e5 and R e6 are an alkyl group. , R e4 and R e5 are alkyl and R e6 is alkoxy group, R e4 is alkyl and R e5 and R e6 are alkoxy groups, more preferably R e4 , R e5 and R e6 are alkane The base group is preferably a third butyl group, a third pentyl group, a third hexyl group or a third heptyl group.

上述構造單位(I)列舉為例如:構造單位(I-1)為以下述式(2-1-1)~(2-1-7)表示之構造單位等;構造單位(I-2)為以下述式(2-2-1)~(2-2-3)表示之構造單位等。 The structural unit (I) is exemplified by, for example, the structural unit (I-1) being a structural unit represented by the following formulas (2-1-1) to (2-1-7); and the structural unit (I-2) is The structural unit represented by the following formula (2-2-1) to (2-2-3).

上述式(2-1-1)~(2-1-7)中,R2與上述式(2-1)同義。Re1、Re2及Re3與上述式(Y-1)同義。r各獨立為1~3之整數。 In the above formulae (2-1-1) to (2-1-7), R 2 has the same meaning as the above formula (2-1). R e1 , R e2 and R e3 are synonymous with the above formula (Y-1). r is independently an integer from 1 to 3.

上述式(2-2-1)~(2-2-3)中,R3與上述式(2-2)同義。 In the above formulas (2-2-1) to (2-2-3), R 3 has the same meaning as the above formula (2-2).

構造單位(I)較好為構造單位(I-1),更好為以上述式(2-1-2)表示之構造單位、以上述式(2-1-3)表示之構造單位,又更好為含環戊烷構造之基、含金 剛烷構造之基,最好為源自(甲基)丙烯酸1-乙基-1-環戊酯之構造單位、源自(甲基)丙烯酸2-乙基-2-金剛烷酯之構造單位。 The structural unit (I) is preferably a structural unit (I-1), more preferably a structural unit represented by the above formula (2-1-2), and a structural unit represented by the above formula (2-1-3). More preferably a base containing cyclopentane, containing gold The base of the cycloalkane structure is preferably a structural unit derived from 1-ethyl-1-cyclopentyl (meth)acrylate and a structural unit derived from 2-ethyl-2-adamantyl (meth)acrylate. .

構造單位(I)之含有比例,相對於構成[A]聚合物之全部構造單位,較好為10莫耳%~90莫耳%,更好為20莫耳%~70莫耳%,又更好為30莫耳%~60莫耳%,最好為40莫耳%~60莫耳%。藉由使構造單位(I)之含有比例為上述範圍,可提高該感放射線性樹脂組成物之LWR性能、解像性、剖面形狀之矩形性及焦點深度。 The content ratio of the structural unit (I) is preferably from 10 mol% to 90 mol%, more preferably from 20 mol% to 70 mol%, and more preferably all structural units constituting the [A] polymer. It is preferably 30% by mole to 60% by mole, preferably 40% by mole to 60% by mole. By setting the content ratio of the structural unit (I) to the above range, the LWR performance, the resolution, the squareness of the cross-sectional shape, and the depth of focus of the radiation-sensitive resin composition can be improved.

[構造單位(II)] [structural unit (II)]

構造單位(II)為由以下述式(3-1)表示之構造單位(以下亦稱為「構造單位(II-1)」)及以下述式(3-2)表示之構造單位(以下亦稱為「構造單位(II-2)」)所組成群組中選出之至少1種。藉由使[A]聚合物具有構造單位(II),可提高[B]酸產生劑在[A]聚合物中之分散性。結果,可提高該感放射線性樹脂組成物之LWR性能、解像性、剖面形狀之矩形性及焦點深度。又,可提高由該感放射線性樹脂組成物形成之抗蝕圖型對基板之密著性。 The structural unit (II) is a structural unit represented by the following formula (3-1) (hereinafter also referred to as "structural unit (II-1)") and a structural unit represented by the following formula (3-2) (hereinafter also At least one selected from the group consisting of "structural unit (II-2)"). By making the [A] polymer have the structural unit (II), the dispersibility of the [B] acid generator in the [A] polymer can be improved. As a result, the LWR performance, the resolution, the squareness of the cross-sectional shape, and the depth of focus of the radiation-sensitive resin composition can be improved. Further, the adhesion of the resist pattern formed of the radiation-sensitive resin composition to the substrate can be improved.

上述式(3-1)中,R4為氫原子、氟原子、甲基或三氟甲基。E1為單鍵、-CO-O-、-CO-NH-或-CO-O-(CH2)i-CO-O,i為1~6之整數。R5為非酸解離性且包含極性基之基。 In the above formula (3-1), R 4 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. E 1 is a single bond, -CO-O-, -CO-NH- or -CO-O-(CH 2 ) i -CO-O, and i is an integer of 1 to 6. R 5 is a group which is non-acid dissociable and which contains a polar group.

上述式(3-2)中,R4’為氫原子或甲基。Ra及Rb各獨立為氫原子、氟原子、羥基或1價有機基。s為1~3之整數。s為2以上時,複數個Ra及Rb可分別相同亦可不同。R5a及R5b各獨立為氫原子、氟原子、羥基或1價有機基。 In the above formula (3-2), R 4' is a hydrogen atom or a methyl group. R a and R b are each independently a hydrogen atom, a fluorine atom, a hydroxyl group or a monovalent organic group. s is an integer from 1 to 3. When s is 2 or more, the plurality of R a and R b may be the same or different. R 5a and R 5b are each independently a hydrogen atom, a fluorine atom, a hydroxyl group or a monovalent organic group.

構造單位(II-1)中,上述R4,就獲得構造單位(II-1)之單體之共聚合性之觀點而言,較好為氫原子、甲基,更好為甲基。 In the structural unit (II-1), the above R 4 is preferably a hydrogen atom or a methyl group from the viewpoint of obtaining the copolymerizability of the monomer of the structural unit (II-1), and more preferably a methyl group.

至於上述E1,就獲得構造單位(II-1)之單體之共聚合性之觀點而言,較好為-CO-O-。 As for the above E 1 , from the viewpoint of obtaining the copolymerizability of the monomer of the structural unit (II-1), -CO-O- is preferable.

以上述R5表示之非酸解離性且含極性基之基中之極性基列舉為例如羥基、羧基、氰基、磺基、巰基、胺基等1價之基(a);羰基、-O-、-S-、-NR'-、組合該等而成之2價之基(b)等。R’為氫原子或碳數1~20之1 價烴基。 The polar group in the non-acid dissociable and polar group-containing group represented by the above R 5 is exemplified by a monovalent group (a) such as a hydroxyl group, a carboxyl group, a cyano group, a sulfo group, a decyl group or an amine group; a carbonyl group, -O -, -S-, -NR'-, a combination of these two-valent bases (b), and the like. R' is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms.

以上述R5表示之非酸解離性且含極性基之基列舉為例如碳數1~20之1價烴基所具有之氫原子之一部分或全部經上述1價之基(a)取代之基、碳數1~20之1價烴基之一部分或全部之碳-碳間含上述2價之基(b)之基、碳數1~20之1價烴基所具有之氫原子之一部分或全部經上述1價之基(a)取代且在一部分或全部之碳-碳間含上述2價之基(b)之基等。 The non-acid dissociable and polar group-containing group represented by the above R 5 is, for example, a group in which one or all of the hydrogen atoms of the monovalent hydrocarbon group having 1 to 20 carbon atoms are substituted with the above-mentioned monovalent group (a). One or all of the hydrogen atoms of the monovalent hydrocarbon group having a carbon number of 1 to 20 and a part or all of the carbon-carbon containing the above-mentioned divalent group (b) and the monovalent hydrocarbon group having 1 to 20 carbon atoms The group of the monovalent (a) is substituted and the base of the above-mentioned divalent group (b) or the like is contained between some or all of the carbon-carbon.

上述碳數1~20之1價烴基列舉為例如碳數1~20之1價鏈狀烴基、碳數3~20之1價脂環式烴基、碳數6~20之1價芳香族烴基等。 The monovalent hydrocarbon group having 1 to 20 carbon atoms is, for example, a monovalent chain hydrocarbon group having 1 to 20 carbon atoms, a monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms, a monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms, and the like. .

上述碳數1~20之1價鏈狀烴基列舉為與例如上述式(2-2)中之作為Re4、Re5及Re6例示者相同之基等。 The above-mentioned monovalent chain hydrocarbon group having 1 to 20 carbon atoms is exemplified by the same as those exemplified as R e4 , R e5 and R e6 in the above formula (2-2).

上述碳數3~20之1價脂環式烴基列舉為例如與上述式(2-1)中之作為Re1、Re2及Re3例示者相同之基。 The above-mentioned monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms is exemplified by the same groups as those exemplified as R e1 , R e2 and R e3 in the above formula (2-1).

上述碳數6~20之1價芳香族烴基列舉為例如:苯基、甲苯基、二甲苯基、均三甲苯基、萘基、甲基萘基、蒽基、甲基蒽基等芳基;苄基、苯乙基、萘甲基、蒽甲基等芳烷基等。 The above-mentioned monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms is exemplified by an aryl group such as a phenyl group, a tolyl group, a xylyl group, a mesityl group, a naphthyl group, a methylnaphthyl group, an anthracenyl group or a methyl fluorenyl group; An aralkyl group such as a benzyl group, a phenethyl group, a naphthylmethyl group or a fluorenylmethyl group.

上述R5列舉為具有內酯構造之基、具有環狀碳酸酯構造之基、具有磺內酯構造之基、具有羥基之基等。 R 5 is exemplified by a group having a lactone structure, a group having a cyclic carbonate structure, a group having a sultone structure, a group having a hydroxyl group, and the like.

上述具有內酯構造之基列舉為例如丁內酯基、降冰片烷內酯基、5-氧代-4-氧雜三環[4.3.1.13,8]十一 烷基等。 The above-mentioned group having a lactone structure is exemplified by, for example, a butyrolactone group, a norbornyl lactone group, a 5-oxo-4-oxatricyclo[4.3.1.1 3,8 ]undecyl group, and the like.

具有環狀碳酸酯構造之基列舉為例如碳酸伸乙酯基甲基等。 The group having a cyclic carbonate structure is exemplified by, for example, an ethyl carbonate methyl group.

具有磺內酯構造之基列舉為例如丙烷磺內酯基、降冰片烷磺內酯基等具有磺內酯構造之基等。 The group having a sultone structure is exemplified by a sultone structure such as a propane sultone group or a norbornane sultone group.

具有羥基之基列舉為例如羥基金剛烷基、二羥基金剛烷基、三羥基金剛烷基、羥基乙基等。 The group having a hydroxyl group is exemplified by, for example, a hydroxyadamantyl group, a dihydroxyadamantyl group, a trihydroxyadamantyl group, a hydroxyethyl group or the like.

構造單位(II-2)中,上述R4',就獲得構造單位(II-2)之單體之共聚合性之觀點而言,較好為氫原子。 In the structural unit (II-2), the above R 4 ' is preferably a hydrogen atom from the viewpoint of obtaining the copolymerizability of the monomer of the structural unit (II-2).

以上述Ra、Rb、R5a及R5b表示之1價有機基列舉為例如碳數1~20之1價鏈狀烴基、碳數3~20之1價脂環式烴基、碳數6~20之1價芳香族烴基、該等基所具有之氫原子之一部分或全部經取代基取代之基、該等基之碳-碳間含有-CO-、-CS-、-O-、-S-或-NR”-、或組合該等中之2種以上之基等。 The monovalent organic group represented by the above R a , R b , R 5a and R 5b is, for example, a monovalent chain hydrocarbon group having 1 to 20 carbon atoms, a monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms, and a carbon number of 6 a monovalent aromatic hydrocarbon group of ~20, a group in which one or all of the hydrogen atoms of the groups are substituted with a substituent, and the carbon-carbon of the groups contains -CO-, -CS-, -O-, - S- or -NR"-, or a combination of two or more of these.

s較好為1或2,更好為1。 s is preferably 1 or 2, more preferably 1.

構造單位(II)列舉為例如:構造單位(II-1)為以下述式(3-1-1)~(3-1-13)表示之構造單位等;構造單位(II-2)為以下述式(3-2-1)及(3-2-2)表示之構造單位等。 The structural unit (II) is, for example, the structural unit (II-1) is a structural unit represented by the following formulas (3-1-1) to (3-1-13); and the structural unit (II-2) is as follows. The structural unit represented by the formulas (3-2-1) and (3-2-2).

上述式(3-1-1)~(3-1-13)中,R4與上述式(3-1)同義。 In the above formulas (3-1-1) to (3-1-13), R 4 has the same meaning as the above formula (3-1).

上述式(3-2-1)及(3-2-2)中,R4’與上述式(3-2)同義。 In the above formulae (3-2-1) and (3-2-2), R 4' is synonymous with the above formula (3-2).

該等中,較好為以上述式(3-1-1)~(3-1-4)、(3-1-8)、(3-1-12)、(3-1-13)、(3-2-1)、(3-2-2)表示之構造單位,更好為以上述式(3-2)表示之構造單位。 Among these, it is preferred to use the above formulas (3-1-1) to (3-1-4), (3-1-8), (3-1-12), (3-1-13), The structural unit represented by (3-2-1) and (3-2-2) is more preferably a structural unit represented by the above formula (3-2).

構造單位(II)之含有比例,相對於構成[A]聚合物之全部構造單位,較好為0莫耳%~90莫耳%,更好為20莫耳%~70莫耳%,又更好為30莫耳%~60莫耳%。藉由使構造單位(II)之含有比例在上述範圍,可進一步提高[B]酸產生劑在[A]聚合物中之分散性,結果,可進一步提高該感放射線性樹脂組成物之LWR性能等之性能。 The content ratio of the structural unit (II) is preferably from 0 mol% to 90 mol%, more preferably from 20 mol% to 70 mol%, and more preferably to all structural units constituting the [A] polymer. Good for 30%%~60% by mole. By making the content ratio of the structural unit (II) in the above range, the dispersibility of the [B] acid generator in the [A] polymer can be further improved, and as a result, the LWR property of the radiation sensitive resin composition can be further improved. Performance.

[構造單位(III)] [structural unit (III)]

構造單位(III)為以下述式(4)表示之構造單位。使用KrF準分子雷射光、EUV、電子束等作為照射之放射線時,該感放射線性樹脂組成物藉由使[A]聚合物具有構造單位(III)而可提高感度。 The structural unit (III) is a structural unit represented by the following formula (4). When KrF excimer laser light, EUV, electron beam, or the like is used as the radiation to be irradiated, the radiation sensitive linear resin composition can improve the sensitivity by making the [A] polymer have the structural unit (III).

上述式(4)中,R6為氫原子或甲基,R7為碳數1~20之1價有機基,p為0~3之整數,R7為複數個時,複數個R7可相同亦可不同,q為1~3之整數,但,p及q滿足p+q≦5。 In the above formula (4), R 6 is a hydrogen atom or a methyl group, R 7 is a monovalent organic group having 1 to 20 carbon atoms, p is an integer of 0 to 3, and when R 7 is plural, plural R 7 may be used. The same or different, q is an integer from 1 to 3, but p and q satisfy p+q≦5.

上述R6,就獲得構造單位(III)之單體之共聚合性之觀點而言,較好為氫原子。 The above R 6 is preferably a hydrogen atom from the viewpoint of obtaining the copolymerizability of the monomer of the structural unit (III).

以上述R7表示之碳數1~20之1價有機基列舉為例如碳數1~20之1價鏈狀烴基、碳數3~20之1價脂環式烴基、碳數6~20之1價芳香族烴基、該等基所具有之氫原子之一部分或全部更取代基取代之基、該等基之碳-碳間含-CO-、-CS-、-O-、-S-或-NR”-、或組合該等中之2種以上而成之基之基等。 The monovalent organic group having 1 to 20 carbon atoms represented by the above R 7 is, for example, a monovalent chain hydrocarbon group having 1 to 20 carbon atoms, a monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms, and a carbon number of 6 to 20 a monovalent aromatic hydrocarbon group, a group in which one or all of the hydrogen atoms of the groups have a substituent, the carbon-carbon of the groups contains -CO-, -CS-, -O-, -S- or -NR"-, or a group in which two or more of these are combined.

該等中,較好為1價鏈狀烴基,更好為烷基,又更好為甲基。 Among these, a monovalent chain hydrocarbon group is preferred, and an alkyl group is more preferred, and a methyl group is more preferred.

上述p較好為0~2之整數,更好為0或1,又更好為0。 The above p is preferably an integer of 0 to 2, more preferably 0 or 1, and more preferably 0.

上述q較好為1或2,更好為1。 The above q is preferably 1 or 2, more preferably 1.

構造單位(III)列舉為以下述式(4-1)~ (4-4)表示之構造單位等。 The structural unit (III) is listed as follows (4-1)~ (4-4) indicates the structural unit and the like.

上述式(4-1)~(4-4)中,R6與上述式(4)同義。 In the above formulae (4-1) to (4-4), R 6 has the same meaning as the above formula (4).

該等中,較好為以上述式(4-1)及(4-2)表示之構造單位,更好為以上述式(4-1)表示之構造單位。 Among these, the structural unit represented by the above formulas (4-1) and (4-2) is preferable, and the structural unit represented by the above formula (4-1) is more preferable.

構造單位(III)之含有比例,相對於構成[A]聚合物之全部構造單位,較好為0莫耳%~90莫耳%,更好為30莫耳%~80莫耳%,又更好為50莫耳%~75莫耳%。藉由使構造單位(III)之含有比例為上述範圍,可進一步提高該感放射線性樹脂組成物之感度。 The content ratio of the structural unit (III) is preferably from 0 mol% to 90 mol%, more preferably from 30 mol% to 80 mol%, and more preferably all structural units constituting the [A] polymer. It is preferably 50% by mole to 755% by mole. By setting the content ratio of the structural unit (III) to the above range, the sensitivity of the radiation sensitive resin composition can be further improved.

又,構造單位(III)可藉由在使以第三丁基等取代羥基苯乙烯之-OH基之氫原子之單體聚合後,使所得聚合物在胺存在下進行水解反應等而形成。 Further, the structural unit (III) can be formed by polymerizing a monomer in which a hydrogen atom of the -OH group of the hydroxystyrene is substituted with a third butyl group or the like, and then subjecting the obtained polymer to a hydrolysis reaction in the presence of an amine.

[構造單位(IV)] [structural unit (IV)]

構造單位(IV)為以下述式(5)表示之構造單位。 [A]聚合物可藉由具有構造單位(IV),而調整對顯像液之溶解性,同時可適度地控制抗蝕膜中之酸擴散。結果,可更提高該感放射線性樹脂組成物之微影性能。 The structural unit (IV) is a structural unit represented by the following formula (5). [A] The polymer can adjust the solubility to the developing solution by having the structural unit (IV) while appropriately controlling the acid diffusion in the resist film. As a result, the lithographic performance of the radiation sensitive resin composition can be further improved.

上述式(5)中,R8為氫原子、氟原子、甲基或三氟甲基。R9及R10各獨立為氫原子或碳數1~20之烴基,或表示該等之基相互結合與該等基所鍵結之氮原子一起構成之環員數3~20之環構造。 In the above formula (5), R 8 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. R 9 and R 10 are each independently a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms, or a ring structure of 3 to 20 ring members which are bonded to each other and a nitrogen atom bonded to the groups.

上述R8,就獲得構造單位(IV)之單體之共聚合性之觀點而言,較好為氫原子、甲基,更好為甲基。 From the viewpoint of obtaining the copolymerizability of the monomer of the structural unit (IV), R 8 is preferably a hydrogen atom or a methyl group, more preferably a methyl group.

以上述R9及R10表示之碳數1~20之烴基列舉為例如與上述式(3)之R5中作為碳數1~20之烴基所例示之基相同者等。 The hydrocarbon group having 1 to 20 carbon atoms represented by the above R 9 and R 10 is, for example, the same as those exemplified as the hydrocarbon group having 1 to 20 carbon atoms in R 5 of the above formula (3).

該等中,較好為碳數1~20之烷基,更好為碳數1~4之烷基,又更好為甲基、乙基。 Among these, an alkyl group having 1 to 20 carbon atoms, more preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group or an ethyl group.

上述該等基相互結合與該等基所鍵結之氮原子一起構成之所表示之環員數3~20之環構造列舉為例如氮雜環戊烷構造(吡咯烷構造)、氮雜環己烷構造(哌啶構造)、氮雜環庚烷構造、氮雜環辛烷構造等氮雜環烷構 造等。 The ring structure in which the above-mentioned groups are bonded to each other and the nitrogen atom to which the groups are bonded together is represented by a ring structure of 3 to 20, for example, a nitrogen heterocyclopentane structure (pyrrolidine structure), azacyclohexane Alkane structure (piperidine structure), azepanic structure, azacyclooctane structure, etc. Create and so on.

該等中,以氮雜環戊烷構造、氮雜環己烷構造較佳,更好為氮雜環己烷構造。 Among these, the azacyclopentane structure and the azacyclohexane structure are preferred, and more preferably the azacyclohexane structure.

至於構造單位(IV),列舉為例如以下述式(5-1)~(5-2)表示之構造單位等。 The structural unit (IV) is exemplified by a structural unit represented by the following formulas (5-1) to (5-2).

上述式(5-1)~(5-4)中,R8與上述式(5)同義。 In the above formulae (5-1) to (5-4), R 8 has the same meaning as the above formula (5).

該等中,較好為以上述式(5-1)~(5-3)表示之構造單位,更好為以上述式(5-1)表示之構造單位。 Among these, the structural unit represented by the above formula (5-1) to (5-3) is preferable, and the structural unit represented by the above formula (5-1) is more preferable.

構造單位(IV)之含有比例相對於構成[A]聚合物之全部構造單位,較好為0莫耳%~30莫耳%,更好為1莫耳%~20莫耳%,又更好為5莫耳%~15莫耳%。藉由使構造單位(IV)之含有比例為上述範圍,可更提高該感放射線性樹脂組成物之微影性能。 The content ratio of the structural unit (IV) is preferably from 0 mol% to 30 mol%, more preferably from 1 mol% to 20 mol%, and more preferably relative to all structural units constituting the [A] polymer. It is 5 mol%~15 mol%. By setting the content ratio of the structural unit (IV) to the above range, the lithographic performance of the radiation sensitive resin composition can be further improved.

[其他構造單位] [Other construction units]

[A]聚合物亦可具有上述構造單位(I)~(IV)以外之其他構造單位。其他構造單位列舉為例如源自含非解離性之1價脂環式烴基之(甲基)丙烯酸酯之構造單位等。其他構造單位之含有比例相對於構成[A]聚合物之全部構造單位,較好為20莫耳%以下,更好為10莫耳%以下。 The [A] polymer may have other structural units other than the above structural units (I) to (IV). Other structural units are exemplified by, for example, a structural unit derived from a (meth) acrylate containing a non-dissociable monovalent alicyclic hydrocarbon group. The content ratio of the other structural unit is preferably 20 mol% or less, more preferably 10 mol% or less, based on the entire structural unit constituting the [A] polymer.

〈[A]聚合物之合成方法〉 <[A] Synthesis Method of Polymer>

[A]聚合物可根據自由基聚合等常用方法合成。例如,以(1)將含有單體及自由基起始劑之溶液滴加於含有反應溶劑或單體之溶液中進行聚合反應之方法,(2)將含有單體之溶液與含有自由基起始劑之溶液分別滴加於含有反應溶劑或單體之溶液中進行聚合反應之方法,(3)將含有各單體之複數種溶液與含有自由基起始劑之溶液分別滴加於含有反應溶劑或單體之溶液中進行聚合反應之方法,(4)使含有單體及自由基起始劑之溶液在無溶劑中或在反應溶劑中進行聚合反應之方法等合成。 [A] The polymer can be synthesized according to a usual method such as radical polymerization. For example, (1) a method in which a solution containing a monomer and a radical initiator is added dropwise to a solution containing a reaction solvent or a monomer to carry out a polymerization reaction, and (2) a solution containing a monomer and a radical-containing solution are used. The solution of the initiator is added dropwise to the solution containing the reaction solvent or the monomer to carry out the polymerization reaction, and (3) the solution containing the respective monomers and the solution containing the radical initiator are separately added to the reaction. A method of performing a polymerization reaction in a solvent or a monomer solution, and (4) synthesizing a solution containing a monomer and a radical initiator in a solventless manner or a polymerization reaction in a reaction solvent.

又,對於單體溶液,滴加單體溶液進行反應時,滴加之單體溶液中之單體量相對於聚合所用之單體總量較好為30莫耳%以上,更好為50莫耳%以上,又更好為70莫耳%以上。 Further, when the monomer solution is added dropwise to carry out the reaction, the amount of the monomer in the monomer solution to be added is preferably 30 mol% or more, more preferably 50 mol%, based on the total amount of the monomers used for the polymerization. More than %, and more preferably more than 70% by mole.

該等方法中之反應溫度只要依據起始劑種類適當決定即可。通常為30℃~150℃,較好為40℃~150℃, 更好為50℃~140℃。滴加時間隨反應溫度、起始劑種類、所反應之單體等條件而不同,但通常為30分鐘~8小時,較好為45分鐘~6小時,更好為1小時~5小時。且,包含滴加時間之總反應時間亦與滴加時間同樣隨著條件而不同,但通常為30分鐘~12小時,較好為45分鐘~12小時,更好為1~10小時。 The reaction temperature in the methods may be appropriately determined depending on the type of the initiator. Usually 30 ° C ~ 150 ° C, preferably 40 ° C ~ 150 ° C, More preferably 50 ° C ~ 140 ° C. The dropwise addition time varies depending on the reaction temperature, the type of the initiator, the monomer to be reacted, and the like, but is usually 30 minutes to 8 hours, preferably 45 minutes to 6 hours, more preferably 1 hour to 5 hours. Further, the total reaction time including the dropping time is also different from the dropping time depending on the conditions, but it is usually from 30 minutes to 12 hours, preferably from 45 minutes to 12 hours, more preferably from 1 to 10 hours.

上述聚合中使用之自由基起始劑列舉為例如偶氮雙異丁腈(AIBN)、2,2’-偶氮雙(4-甲氧基-2,4-二甲基戊腈)、2,2’-偶氮雙(2-環丙基丙腈)、2,2’-偶氮雙(2,4-二甲基戊腈)、2,2’-偶氮雙(2-甲基丙酸)二甲酯、2,2’-偶氮雙異丁酸二甲酯等偶氮系自由基起始劑;苯甲醯基過氧化物、第三丁基過氧化氫、異丙苯基過氧化氫等過氧化物系自由基聚合起始劑等。該等中以AIBN、2,2’-偶氮雙(2-甲基丙酸)二甲酯較佳。又,自由基起始劑可單獨使用或混合兩種以上使用。 The radical initiator used in the above polymerization is exemplified by, for example, azobisisobutyronitrile (AIBN), 2,2'-azobis(4-methoxy-2,4-dimethylvaleronitrile), 2 , 2'-azobis(2-cyclopropylpropionitrile), 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-azobis(2-methyl An azo radical initiator such as dimethyl diacetate or dimethyl 2,2'-azobisisobutyrate; benzhydryl peroxide, tert-butyl hydroperoxide, cumene A peroxide-based radical polymerization initiator such as hydrogen peroxide. Among these, AIBN, 2,2'-azobis(2-methylpropionic acid) dimethyl ester is preferred. Further, the radical initiators may be used singly or in combination of two or more.

反應溶劑為會阻礙聚合之溶劑(具有聚合抑制效果之硝基苯、具有鏈轉移效果之硫醇化合物等)以外之溶劑,且只要可溶解該單體之溶劑即可使用。列舉為例如醇類、醚類、酮類、醯胺類、酯.內酯類、腈類及其混合溶劑等。該等溶劑可單獨使用或組合2種以上使用。 The reaction solvent is a solvent other than a solvent which inhibits polymerization (nitrobenzene having a polymerization inhibitory effect, a thiol compound having a chain transfer effect, etc.), and can be used as long as it can dissolve the solvent of the monomer. Listed as, for example, alcohols, ethers, ketones, guanamines, esters. Lactones, nitriles and mixed solvents thereof. These solvents may be used singly or in combination of two or more.

由聚合反應獲得之聚合物較好以再沉澱法回收。亦即,聚合反應結束後,藉由將聚合液倒入再沉澱溶劑中,以粉體回收目的聚合物。再沉澱溶劑可單獨或組合2種以上之醇類或烷類等而使用。且,除再沉澱法以外, 亦可藉由分液操作或管柱操作、超過濾操作等,去除單體、寡聚物等低分子成分,而回收聚合物。 The polymer obtained by the polymerization is preferably recovered by a reprecipitation method. That is, after the completion of the polymerization reaction, the target polymer is recovered as a powder by pouring the polymerization liquid into a reprecipitation solvent. The reprecipitation solvent can be used singly or in combination of two or more kinds of alcohols or alkanes. And, in addition to the reprecipitation method, The polymer can also be recovered by removing a low molecular component such as a monomer or an oligomer by a liquid separation operation, a column operation, an ultrafiltration operation, or the like.

[A]聚合物之利用凝膠滲透層析儀(GPC)測量之聚苯乙烯換算之重量平均分子量(Mw)較好為1,000~50,000,更好為2,000~40,000,又更好為3,000~30,000,最好為5,000~20,000。[A]聚合物之Mw未達上述下限時,會有由該感放射線性樹脂組成物形成之抗蝕圖型之耐熱性下降之虞。[A]聚合物之Mw超過上述上限時,會有該感放射線性樹脂組成物之顯像性下降之虞。 [A] Polymer The weight average molecular weight (Mw) in terms of polystyrene measured by gel permeation chromatography (GPC) is preferably from 1,000 to 50,000, more preferably from 2,000 to 40,000, still more preferably from 3,000 to 30,000. , preferably 5,000~20,000. When the Mw of the polymer is less than the above lower limit, the heat resistance of the resist pattern formed of the radiation-sensitive resin composition may be lowered. When the Mw of the polymer exceeds the above upper limit, the developability of the radiation-sensitive resin composition may be lowered.

[A]聚合物之Mw相對於藉GPC測定之聚苯乙烯換算之數平均分子量(Mw)之比(Mw/Mn,分散度)較好為1~5,更好為1~3,又更好為1~2.5。 [A] The ratio of the Mw of the polymer to the number average molecular weight (Mw) in terms of polystyrene by GPC (Mw/Mn, dispersity) is preferably from 1 to 5, more preferably from 1 to 3, and further Good for 1~2.5.

[A]聚合物中之低分子量部分(意指分子量未達1,000之部分)之含量較好為0.5質量%以下,更好為0.3質量%以下,又更好為0.1質量%以下。藉由使上述低分子量部分之含量為上述範圍,可更提高該感放射線性樹脂組成物之LWR性能等。 The content of the low molecular weight portion (meaning that the molecular weight is less than 1,000) in the polymer is preferably 0.5% by mass or less, more preferably 0.3% by mass or less, still more preferably 0.1% by mass or less. By setting the content of the low molecular weight portion to the above range, the LWR performance and the like of the radiation sensitive resin composition can be further improved.

[A]聚合物之含量相對於該感放射線性樹脂組成物中之總固體成分,較好為70質量%以上,更好為80質量%以上,又更好為85質量%以上。 The content of the [A] polymer is preferably 70% by mass or more, more preferably 80% by mass or more, and still more preferably 85% by mass or more based on the total solid content of the radiation sensitive resin composition.

〈[B]酸產生劑〉 <[B]acid generator>

[B]酸產生劑包含以下述式(1)表示之化合物(以下亦稱為「化合物(1)」)。該感放射線性樹脂組成物藉 由含有[B]酸產生劑,而使LWR性能、解像性、剖面形狀之矩形性及焦點深度優異。 The [B] acid generator contains a compound represented by the following formula (1) (hereinafter also referred to as "compound (1)"). The radiation-sensitive linear resin composition The [B] acid generator is excellent in RWR performance, resolution, cross-sectional shape, and depth of focus.

【化15】G-L-R1-SO3 - M+ (1)上述式(1)中,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種或單鍵,RA為氫原子或碳數1~20之1價烴基,*表示與G之鍵結部位,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種,R1為鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為含碳數3~30之脂環構造之基、含碳數6~30之芳香環構造之基、含碳數3~30之雜環構造之基或含碳數2~20之-NRBRC之基,L為單鍵時,R1為單鍵或鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為碳數7~30之多環之脂環式烴基或含碳數2~20之-NRBRC之基,RB及RC各獨立為碳數1~10之烷基或碳數3~10之環烷基,或表示該等基相互結合與該等所鍵結之氮原子一起構成之環員數3~20之環構造,M+為1價之放射線分解性鎓陽離子。 [15] GLR 1 -SO 3 - M + (1) In the above formula (1), L is composed of -COO-*, -SO 2 O-, -CONR A -, -O- and -S- At least one or a single bond selected from the group, R A is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, * represents a bonding site with G, and L is a group of -COO-*, -SO 2 O-, At least one selected from the group consisting of -CONR A -, -O-, and -S-, and R 1 is a substituted or unsubstituted carbon number of an unbonded fluorine atom adjacent to a carbon atom of SO 3 - ~10 alkanediyl, G is an alicyclic structure having a carbon number of 3 to 30, an aromatic ring structure having a carbon number of 6 to 30, a heterocyclic structure having a carbon number of 3 to 30, or a carbon Number of 2 to 20 -NR B R C , when L is a single bond, R 1 is a single bond or a substituted or unsubstituted carbon number of an unbonded fluorine atom adjacent to a carbon atom of SO 3 - ~10 alkanediyl, G is a polycyclic alicyclic hydrocarbon group having a carbon number of 7 to 30 or a NR B R C group having a carbon number of 2 to 20, and R B and R C are each independently a carbon number of 1~ An alkyl group of 10 or a cycloalkyl group having 3 to 10 carbon atoms, or a ring structure of 3 to 20 ring members which are bonded to the nitrogen atoms bonded to the groups, and M + is a monovalent structure. Radiation decomposing Child.

[B]酸產生劑係藉由放射線之照射而使質子鍵 結於化合物(1)之-SO3 -上而成為磺酸化合物。 [B] The acid generator is a sulfonic acid compound by causing a proton to bond to -SO 3 - of the compound (1) by irradiation with radiation.

[B]酸產生劑在[A]聚合物具有構造單位(I-1)作為酸解離性基,且在阻劑圖型形成時之曝光後烘烤(PEB)溫度較低(例如110℃以下)時,可於未曝光部中捕捉酸,於曝光部則喪失該酸捕捉功能。據此,認為可控制酸不擴散至未曝光部。 [B] The acid generator has a structural unit (I-1) as an acid dissociable group in the [A] polymer, and a post-exposure bake (PEB) temperature is low when the resist pattern is formed (for example, 110 ° C or less) In the case where the acid is trapped in the unexposed portion, the acid capturing function is lost in the exposed portion. Accordingly, it is considered that the controllable acid does not diffuse to the unexposed portion.

另外,[B]酸產生劑在[A]聚合物具有構造單位(I-1)作為酸解離性基,且PEB溫度較高(例如120℃以上)時,或[A]聚合物具有構造單位(I-2)作為酸解離性基時,認為可使藉由放射線之照射而自該[B]酸產生劑產生之酸作為觸媒使上述酸解離性基解離。 Further, the [B] acid generator has a structural unit (I-1) as an acid dissociable group in the [A] polymer, and the PEB temperature is high (for example, 120 ° C or higher), or the [A] polymer has a structural unit. (I-2) When it is an acid dissociable group, it is considered that the acid dissociable group can be dissociated by using an acid generated from the [B] acid generator by irradiation of radiation as a catalyst.

藉由使該感放射線性樹脂組成物含有[B]酸產生劑而發揮上述效果之理由雖未必明確,但可推測如下。[B]酸產生劑為含有-COO-、-NRBRC等之具有適度極性之基與脂環構造或芳香環構造,或具有多環之脂環式烴基。如此[B]酸產生劑具有適度之極性與體積,結果,可將該[B]酸產生劑及由[B]酸產生劑產生之酸之擴散控制為適度。據此,依據[B]酸產生劑,可提高該感放射線性樹脂組成物之LWR性能、解像性、剖面形狀之矩形性及焦點深度。 Although the reason why the above-described effects are exhibited by including the [B] acid generator in the radiation-sensitive resin composition is not necessarily clear, it is presumed as follows. [B] The acid generator is a alicyclic or aromatic ring structure having a moderate polarity containing -COO-, -NR B R C or the like, or an alicyclic hydrocarbon group having a polycyclic ring. Thus, the [B] acid generator has a moderate polarity and volume, and as a result, the diffusion of the [B] acid generator and the acid produced by the [B] acid generator can be controlled to be moderate. According to this, according to the [B] acid generator, the LWR performance, the resolution, the squareness of the cross-sectional shape, and the depth of focus of the radiation-sensitive resin composition can be improved.

上述-CONRA-之以RA表示之碳數1~20之1價烴基列舉為例如與[A]聚合物中之上述式(5)之作為R9及R10例示者相同之基等。 The monovalent hydrocarbon group having 1 to 20 carbon atoms represented by R A in the above -CONR A - is, for example, the same as those exemplified as R 9 and R 10 in the above formula (5) in the [A] polymer.

該等中,較好為烷基,更好為碳數1~4之烷基,又更 好為甲基、乙基。 Among these, it is preferably an alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms, and still more It is preferably methyl or ethyl.

上述RA較好為氫原子。 The above R A is preferably a hydrogen atom.

以上述R1表示之鄰接於SO3 -之碳原子上未鍵結氟原子之未經取代之碳數1~10之烷二基列舉為例如:甲烷二基、1,2-乙烷二基、1,3-丙烷二基、1,4-丁烷二基、1,5-戊烷二基、1,6-己烷二基、1,7-庚烷二基、1,8-辛烷二基、1,9-壬烷二基、1,10-癸烷二基等直鏈狀烷二基;1,1-乙烷二基、1,1-丙烷二基、1,2-丙烷二基、1,2-丁烷二基、1,3-丁烷二基、1,4-戊烷二基等分支狀之烷二基。 The unsubstituted alkanediyl group having 1 to 10 carbon atoms which is not bonded to the fluorine atom on the carbon atom of the SO 3 - represented by the above R 1 is exemplified by, for example, methane diyl and 1,2-ethane diyl. , 1,3-propanediyl, 1,4-butanediyl, 1,5-pentanediyl, 1,6-hexanediyl, 1,7-heptanediyl, 1,8-octyl a linear alkanediyl group such as an alkanediyl group, a 1,9-nonanediyl group or a 1,10-decanediyl group; a 1,1-ethanediyl group, a 1,1-propanediyl group, a 1,2- a branched alkanediyl group such as a propanediyl group, a 1,2-butanediyl group, a 1,3-butanediyl group or a 1,4-pentanediyl group.

可取代上述烷二基所具有之氫原子之一部分或全部之取代基列舉為例如氟原子、氯原子、溴原子、碘原子等鹵原子、羥基、羧基、胺基、氰基、硝基、烷氧基、烷氧基羰基、醯基、醯氧基等。但,作為取代基之氟原子不鍵結於與鄰接於SO3 -之碳原子上。 The substituent which may be substituted for a part or the whole of one of the hydrogen atoms of the above alkanediyl group is exemplified by a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, a hydroxyl group, a carboxyl group, an amine group, a cyano group, a nitro group or an alkane group. An oxy group, an alkoxycarbonyl group, a decyl group, a decyloxy group or the like. However, the fluorine atom as a substituent is not bonded to a carbon atom adjacent to SO 3 - .

上述R1較好為未經取代之烷二基,更好為未經取代且為直鏈狀之烷二基,又更好為1,2-乙烷二基、1,3-丙烷二基、1,4-丁烷二基。 The above R 1 is preferably an unsubstituted alkanediyl group, more preferably an unsubstituted and linear alkanediyl group, more preferably a 1,2-ethanediyl group or a 1,3-propanediyl group. , 1,4-butanediyl.

上述L係由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種時,以上述G表示之含碳數3~30之脂環構造之基列舉為例如:環戊基、環己基等單環環烷基;降冰片基、金剛烷基等多環環烷基等。 When the L system is at least one selected from the group consisting of -COO-*, -SO 2 O-, -CONR A -, -O-, and -S-, the carbon number represented by the above G is 3 to 30. The group of the alicyclic structure is exemplified by a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group; a polycyclic cycloalkyl group such as a norbornyl group or an adamantyl group; and the like.

以上述G表示之含碳數6~30之芳香環構造之基列舉為例如:苯基、甲苯基、二甲苯基、均三甲苯基等芳基;苄基、苯乙基等芳烷基等。 The group of the aromatic ring structure having 6 to 30 carbon atoms represented by the above G is exemplified by an aryl group such as a phenyl group, a tolyl group, a xylyl group or a mesityl group; an aralkyl group such as a benzyl group or a phenethyl group; .

以上述G表示之含碳數3~30之雜環構造之基列舉為例如:脂肪族雜環基為氮雜環戊基、但雜環己基等氮雜環烷基;丁內酯基、降冰片烷內酯基、5-氧代-4-氧雜三環[4.3.1.13,8]十一烷基等具有內酯構造之基;碳酸伸乙酯基甲基等具有環狀碳酸酯構造之基;丙烷磺內酯基、降冰片烷磺內酯基等具有磺內酯構造之基等。 The group having a heterocyclic ring structure having 3 to 30 carbon atoms represented by the above G is, for example, an aliphatic heterocyclic group which is azacyclopentyl group, but a heterocyclohexyl group such as a heterocyclohexyl group; a butyrolactone group; a base having a lactone structure such as a borneol lactone group, a 5-oxo-4-oxatricyclo[4.3.1.1 3,8 ]undecyl group or the like; a carbonate ester methyl group having a cyclic carbonate The base of the structure; a base having a sultone structure such as a propane sultone group or a norbornane sultone group.

以上述RB及RC表示之碳數1~10之烷基列舉為例如甲基、乙基、正丙基、異丙基等。 The alkyl group having 1 to 10 carbon atoms represented by the above R B and R C is exemplified by a methyl group, an ethyl group, a n-propyl group, an isopropyl group or the like.

以上述RB及RC表示之碳數3~10之環烷基列舉為例如環丙基、環丁基、環戊基、環己基、環辛基、降冰片基、金剛烷基、三環癸基等。 The cycloalkyl group having 3 to 10 carbon atoms represented by the above R B and R C is exemplified by, for example, a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cyclooctyl group, a norbornyl group, an adamantyl group, a tricyclic ring.癸基等.

上述該等基相互結合與該等所鍵結之氮原子一起構成所表示之環員數3~20之環構造列舉為例如氮雜環己烷構造、氮雜環己烷構造、氮雜環辛烷構造等氮雜環烷構造等。 The ring structure in which the above-mentioned groups are bonded to each other and the nitrogen atom to be bonded together constitutes a ring number of 3 to 20, which is represented by, for example, an azacyclohexane structure, an azacyclohexane structure, or azacyclononine. Azacycloalkane structure such as alkane structure.

RB及RC在該等中較好為烷基,或表示RB及RC相互結合構成之氮雜環烷構造,更好為碳數1~4之烷基,或表 示RB及RC相互結合構成之環員數3~8之氮雜環烷構造,又更好為甲基或乙基,或表示RB及RC相互結合構成之氮雜環戊烷構造或氮雜環己烷構造。 R B and R C are preferably an alkyl group or an azacycloalkane structure in which R B and R C are bonded to each other, more preferably an alkyl group having 1 to 4 carbon atoms, or R B and R. C bonded to each other membered ring structure composed of aza-cycloalkyl of 3 to 8, and more preferably methyl or ethyl, or R B and R C represents a mutual binding azacyclopentane configuration or composed of azacyclohexyl Alkane structure.

以上述G表示之含碳數2~20之-NRBRC之基列舉為例如:二甲基胺基、甲基乙基胺基、二乙基胺基、二正丙基胺基、二異丙基胺基、二正丁基胺基等二烷基胺基;N-氮雜環丙基、N-氮雜環丁基、N-氮雜環戊基、N-氮雜環己基、N-氮雜環辛基等N-氮雜環烷基等。 The group of -NR B R C having a carbon number of 2 to 20 represented by the above G is exemplified by, for example, dimethylamino group, methylethylamino group, diethylamino group, di-n-propylamino group, and a dialkylamino group such as an isopropylamino group or a di-n-butylamino group; an N-azetidinyl group, an N-azetidinyl group, an N-azetidine group, an N-azacyclohexyl group, An N-azacycloalkyl group such as an N-azetidine group or the like.

該等中,以二甲基胺基、二乙基胺基、N-氮雜環戊基、N-氮雜環己基較佳,更好為二甲基胺基、N-氮雜環己基,又更好為N-氮雜環己基。 Among these, a dimethylamino group, a diethylamino group, an N-azetidine group, and an N-azetidinyl group are preferred, and more preferably a dimethylamino group or an N-azacyclohexyl group. More preferably, it is an N-azacyclohexyl group.

上述L為單鍵時,以上述G表示之碳數7~30之多環之脂環式烴基列舉為例如:降冰片基、金剛烷基、三環癸基、四環十二烷基等。 When L is a single bond, the alicyclic hydrocarbon group having a polycyclic number of 7 to 30 represented by G is exemplified by a norbornyl group, an adamantyl group, a tricyclodecyl group, a tetracyclododecyl group or the like.

該等中,以降冰片基、金剛烷基較佳,更好為金剛烷基。 Among these, a norbornyl group, an adamantyl group is preferred, and an adamantyl group is more preferred.

化合物(I)較好為以下述式(1-a)~(1-d)表示之化合物。 The compound (I) is preferably a compound represented by the following formula (1-a) to (1-d).

上述式(1-a)~(1-d)中,G1為以下述式(g-1)表示之基。G2為以下述式(g-2)表示之基。X1為-NRA-。X2及X3各獨立為-O-或-NRA-。RA為氫原子或碳數1~20之1價烴基。R1及M+與上述式(1)同義。 In the above formula (1-a) to (1-d), G 1 is a group represented by the following formula (g-1). G 2 is a group represented by the following formula (g-2). X 1 is -NR A -. X 2 and X 3 are each independently -O- or -NR A -. R A is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. R 1 and M + are synonymous with the above formula (1).

上述式(g-1)中,Rb1為碳數1~6之烷二基。Rb2為以Rb4C(-*)3表示之3價基或氮原子。*表示 鍵結鍵。Rb3為與Rb2一起結合構成脂環式構造、芳香環構造或雜環構造之2價基。Rb4為碳數1~10之烷基。 In the above formula (g-1), R b1 is an alkanediyl group having 1 to 6 carbon atoms. R b2 is a trivalent group or a nitrogen atom represented by R b4 C(-*) 3 . * indicates the key combination. R b3 is a divalent group which binds to R b2 to form an alicyclic structure, an aromatic ring structure or a heterocyclic structure. R b4 is an alkyl group having 1 to 10 carbon atoms.

上述式(g-2)中,Rc1為碳數1~10之1價鏈狀烴基或碳數3~20之1價脂環式烴基。Rc2及Rc3各獨立為碳數1~10之鏈狀烴基或碳數3~20之1價脂環式烴基,或表示該等基相互結合與該等所鍵結之碳原子一起構成之環碳數3~20之脂環構造。 In the above formula (g-2), R c1 is a monovalent chain hydrocarbon group having 1 to 10 carbon atoms or a monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms. R c2 and R c3 are each independently a chain hydrocarbon group having 1 to 10 carbon atoms or a monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms, or a combination of the groups and the carbon atoms bonded thereto. The alicyclic structure of the ring carbon number 3~20.

以上述M+表示之1價放射線分解性鎓陽離子為利用放射線之作用而分解之陽離子。在曝光部中由藉由該射線分解性鎓陽離子之分解生成之質子,與上述化合物(1)之磺酸鹽陰離子產生磺酸。以上述M+表示之1價放射線分解性鎓陽離子列舉為例如含S、I、O、N、P、Cl、Br、F、As、Se、Sn、Sb、Te、Bi等元素之放射線分解性鎓陽離子。含S(硫)作為元素之陽離子列舉為例如鋶陽離子、四氫噻吩鎓陽離子等,含I(碘)作為元素之陽離子列舉為錪陽離子等。該等中,較好為以下述式(M-1)表示之鋶陽離子、以下述式(M-2)表示之錪陽離子。 The monovalent radiation-decomposable phosphonium cation represented by the above M + is a cation which is decomposed by the action of radiation. A sulfonic acid is generated from the sulfonate anion of the compound (1) by a proton formed by decomposition of the ray-decomposable cation cation in the exposed portion. The monovalent radiation-decomposable phosphonium cation represented by the above M + is exemplified by radiation decomposability of elements such as S, I, O, N, P, Cl, Br, F, As, Se, Sn, Sb, Te, and Bi. Ruthenium cation. The cation containing S (sulfur) as an element is exemplified by a phosphonium cation, a tetrahydrothiophene cation, etc., and a cation containing I (iodine) as an element is exemplified by a phosphonium cation. Among these, a phosphonium cation represented by the following formula (M-1) and a phosphonium cation represented by the following formula (M-2) are preferred.

上述式(M-1)中,R11、R12及R13各獨立為經取代或未經取代之碳數1~12之直鏈狀或分支狀之烷基、經取代或未經取代之碳數6~12之芳香族烴基、-SO2-RD或-SO2-RE,或表示該等基中之2個以上相互結合構成之環構造。RD及RE各獨立為經取代或未經取代之碳數1~12之直鏈狀或分支狀之烷基、經取代或未經取代之碳數5~25之脂環式烴基或經取代或未經取代之碳數6~12之芳香族烴基。k、m及n各獨立為0~5之整數。R11~R13及RD與RE各為複數時,複數之R11~R13以及RD及RE可分別相同亦可不同。 In the above formula (M-1), R 11 , R 12 and R 13 are each independently a substituted or unsubstituted linear or branched alkyl group having 1 to 12 carbon atoms, substituted or unsubstituted. An aromatic hydrocarbon group having 6 to 12 carbon atoms, -SO 2 -R D or -SO 2 -R E , or a ring structure in which two or more of the groups are bonded to each other. R D and R E are each independently substituted or unsubstituted linear or branched alkyl having 1 to 12 carbon atoms, substituted or unsubstituted alicyclic hydrocarbon group having 5 to 25 carbon atoms or A substituted or unsubstituted aromatic hydrocarbon group having 6 to 12 carbon atoms. Each of k, m, and n is an integer of 0 to 5. When R 11 to R 13 and R D and R E are each plural, the plural R 11 to R 13 and R D and R E may be the same or different.

上述式(M-2)中,R14及R15各獨立為經取代或未經取代之碳數1~12之直鏈狀或分支狀之烷基、經取代或未經取代之碳數6~12之芳香族烴基、-SO2-RF或-SO2-RG,或表示該等基中之2個以上相互結合構成之環構造。RF及RG各獨立為經取代或未經取代之碳數1~12之直鏈狀或分支狀之烷基、經取代或未經取代之碳數5~25之脂環式烴基或經取代或未經取代之碳數6~12之芳香族烴基。i及j各獨立為0~5之整數。R14、R15、RF與RG各為複數時,複數之R14、R15、RF及RG可分別相同亦可不同。 In the above formula (M-2), R 14 and R 15 are each independently a substituted or unsubstituted linear or branched alkyl group having 1 to 12 carbon atoms, and a substituted or unsubstituted carbon number 6 An aromatic hydrocarbon group of ~12, -SO 2 -R F or -SO 2 -R G , or a ring structure in which two or more of these groups are bonded to each other. R F and R G are each independently a substituted or unsubstituted carbon atoms of the branched linear alkyl group of 1 to 12 or a substituted or unsubstituted alicyclic of 5 to 25 carbon atoms of the cyclic hydrocarbon group, or by A substituted or unsubstituted aromatic hydrocarbon group having 6 to 12 carbon atoms. Each of i and j is an integer of 0 to 5. When R 14 , R 15 , R F and R G are each plural, the plural R 14 , R 15 , R F and R G may be the same or different.

以上述R11~R15表示之未經取代之直鏈狀烷基列舉為例如甲基、乙基、正丙基、正丁基等。 The unsubstituted linear alkyl group represented by the above R 11 to R 15 is exemplified by a methyl group, an ethyl group, a n-propyl group, an n-butyl group or the like.

以上述R11~R15表示之未經取代之分支狀烷基列舉為例如異丙基、異丁基、第二丁基、第三丁基等。 The unsubstituted branched alkyl group represented by the above R 11 to R 15 is exemplified by isopropyl group, isobutyl group, second butyl group, tert-butyl group and the like.

以上述R11~R15表示之未經取代之芳香族烴基列舉為 例如苯基、萘基等芳基;苄基、苯乙基等芳烷基等。 The unsubstituted aromatic hydrocarbon group represented by the above R 11 to R 15 is exemplified by an aryl group such as a phenyl group or a naphthyl group; an aralkyl group such as a benzyl group or a phenethyl group.

可取代上述烷基及芳香族烴基所具有之氫原子之取代基列舉為例如氟原子、氯原子、溴原子、碘原子等鹵原子、羥基、羧基、氰基、硝基、烷氧基、烷氧基羰基、烷氧基羰基氧基、醯基、醯氧基等。 The substituent which may be substituted for the hydrogen atom of the above alkyl group and the aromatic hydrocarbon group is exemplified by a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, a hydroxyl group, a carboxyl group, a cyano group, a nitro group, an alkoxy group or an alkane group. An oxycarbonyl group, an alkoxycarbonyloxy group, a decyl group, a decyloxy group or the like.

該等中,以鹵原子較佳,更好為氟原子。 Among these, a halogen atom is preferred, and a fluorine atom is more preferred.

上述R11~R15較好為未經取代之直鏈狀或分支狀之烷基、氟化烷基、未經取代之1價芳香族烴基、-OSO2-R”、-SO2-R”,更好為氟化烷基、未經取代之1價芳香族烴基,又更好為氟化烷基。R”為未經取代之1價脂環式烴基或未經取代之1價芳香族烴基。 The above R 11 to R 15 are preferably an unsubstituted linear or branched alkyl group, a fluorinated alkyl group, an unsubstituted monovalent aromatic hydrocarbon group, -OSO 2 -R", -SO 2 -R More preferably, it is a fluorinated alkyl group, an unsubstituted monovalent aromatic hydrocarbon group, and more preferably a fluorinated alkyl group. R" is an unsubstituted monovalent alicyclic hydrocarbon group or an unsubstituted monovalent aromatic hydrocarbon group.

上述(M-1)中之k、m及n較好為0~2之整數,更好為0或1,又更好為0。 The k, m and n in the above (M-1) are preferably an integer of 0 to 2, more preferably 0 or 1, more preferably 0.

上述(M-2)中之i及j較好為0~2之整數,更好為0或1,又更好為0。 i and j in the above (M-2) are preferably an integer of 0 to 2, more preferably 0 or 1, more preferably 0.

化合物(I)列舉為例如以下述式(1-1)~(1-25)表示之化合物(以下亦稱為「化合物(1-1)~(1-25)」)。 The compound (I) is exemplified by a compound represented by the following formula (1-1) to (1-25) (hereinafter also referred to as "compound (1-1) to (1-25)").

該等中,以化合物(1-1)~(1-17)較佳。 Among these, the compounds (1-1) to (1-17) are preferred.

上述化合物(I)可藉由例如具有下述(A)步驟及(B)步驟,且以下述反應流程圖所示之製造方法製造。 The above compound (I) can be produced, for example, by the production method shown in the following reaction scheme by having the following steps (A) and (B).

(A)使以下述式(i-a)表示之有機化合物與以E2SO3(E+ 2SO3 2-)表示之亞硫酸鹽反應,獲得以下述式(i-b)表示之磺酸鹽之步驟。 (A) a step of reacting an organic compound represented by the following formula (ia) with a sulfite represented by E 2 SO 3 (E + 2 SO 3 2- ) to obtain a sulfonate represented by the following formula (ib) .

(B)使上述磺酸鹽與MY(M+Y-)表示之鎓鹽反應之步驟。 (B) a step of reacting the above sulfonate with an onium salt represented by MY(M + Y - ).

上述式(i-a)、(i-b)及(1)中,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種或單鍵,RA為氫原子或碳數1~20之1價烴基,*表示與G之鍵結部位,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種時,R1為鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為含碳數3~30之脂環構造之基、含碳數6~30之芳香環構造之基、含碳數3~30之雜環構造之基或含碳數2~20之-NRBRC之基,L為單鍵時,R1為單鍵或鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為碳數7~30之多環之脂環式烴基或含碳數2~20之-NRBRC之基,RB及RC各獨立為碳數1~10之烷基或碳數3~10之環烷基,或表示該等基相互結合與該等所鍵結之氮原子一起構成之環員數3~20之環構造,X為鹵原子,E+為鹼金屬離子,M+為1價之放射線分解性鎓陽離子,Y-為1價之陰離子。 In the above formulas (ia), (ib) and (1), L is at least one selected from the group consisting of -COO-*, -SO 2 O-, -CONR A -, -O- and -S- Or a single bond, R A is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, * represents a bonding site with G, and L is a group of -COO-*, -SO 2 O-, -CONR A -, -O When at least one selected from the group consisting of - and -S-, R 1 is a substituted or unsubstituted alkanediyl group having 1 to 10 carbon atoms adjacent to an unbonded fluorine atom on a carbon atom of SO 3 - , G is a base of an alicyclic structure having a carbon number of 3 to 30, a base of an aromatic ring having a carbon number of 6 to 30, a base of a heterocyclic structure having a carbon number of 3 to 30, or a carbon number of 2 to 20 - a group of NR B R C , when L is a single bond, R 1 is a single bond or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms adjacent to a fluorine atom not bonded to a carbon atom of SO 3 - , G is an alicyclic hydrocarbon group having a carbon number of 7 to 30 or a NR B R C group having a carbon number of 2 to 20, and R B and R C are each independently an alkyl group having 1 to 10 carbon atoms or carbon. a cycloalkyl group of 3 to 10, or a ring structure of 3 to 20 ring members which are bonded to the nitrogen atoms bonded to the groups, X is a halogen atom, and E + is an alkali metal ion. M + is 1 price The radioactive decomposed phosphonium cation, Y - is a monovalent anion.

上述(A)步驟中,藉由使以上述式(i-a)表示之有機鹵化物與以E2SO3表示之亞硫酸鹽在例如甲醇/水混合溶劑中反應,獲得以上述式(i-b)表示之磺酸鹽。 In the above step (A), the organic halide represented by the above formula (ia) and the sulfite represented by E 2 SO 3 are reacted in, for example, a methanol/water mixed solvent to obtain the above formula (ib). Sulfonic acid salt.

接著,上述(B)步驟中,使用例如二氯甲烷/水之溶劑,使上述磺酸鹽與以MY表示之鎓鹽反應,獲得以上述式(1)表示之化合物。反應後,利用分液洗淨、管柱層析等適當之處理,可獲得化合物(I)。 Next, in the above step (B), the sulfonate is reacted with a sulfonium salt represented by MY using a solvent such as dichloromethane/water to obtain a compound represented by the above formula (1). After the reaction, the compound (I) can be obtained by an appropriate treatment such as liquid separation washing or column chromatography.

[B]酸產生劑之含量相對於[A]聚合物100質量份,較好為0.1質量份~30質量份,更好為0.2質量份~20質量份,又更好為0.5質量份~10質量份,最好為1質量份~5質量份。 The content of the [B] acid generator is preferably from 0.1 part by mass to 30 parts by mass, more preferably from 0.2 part by mass to 20 parts by mass, even more preferably from 0.5 part by mass to 10 parts by mass per 100 parts by mass of the [A] polymer. The mass part is preferably from 1 part by mass to 5 parts by mass.

又,該感放射線性樹脂組成物含有後述之[D]其他酸產生劑時,[B]酸產生劑之含量相對於該[D]其他酸產生劑100莫耳%,較好為5莫耳%~100莫耳%,更好為10莫耳%~60莫耳%,又更好為20莫耳%~50莫耳%。 Further, when the radiation sensitive resin composition contains the other acid generator [D] described later, the content of the [B] acid generator is 100 mol%, preferably 5 mol, based on the other acid generator of [D]. %~100% by mole, more preferably 10% by mole to 60% by mole, and even more preferably 20% by mole to 50% by mole.

藉由使[B]酸產生劑之含量為上述範圍,可更提高該感放射線性樹脂組成物之LWR性能等。 By setting the content of the [B] acid generator to the above range, the LWR performance and the like of the radiation sensitive resin composition can be further improved.

〈[C]溶劑〉 <[C] Solvent>

[C]溶劑為使[A]聚合物、[B]酸產生劑及任意成分溶解或分散之成分。至於[C]溶劑列舉為例如由醇系溶劑、酮系溶劑、醯胺系溶劑、醚系溶劑、酯系溶劑等。[C]溶劑可單獨使用1種或組合2種以上使用。 The solvent [C] is a component which dissolves or disperses the [A] polymer, the [B] acid generator, and optional components. The solvent of [C] is exemplified by an alcohol solvent, a ketone solvent, a guanamine solvent, an ether solvent, an ester solvent, and the like. The solvent may be used singly or in combination of two or more.

醇系溶劑列舉為例如:單醇系溶劑為甲醇、乙醇、正丙醇、異丙醇、正丁醇、異丁醇、第二丁醇、第三丁醇、正戊醇、異戊醇、2-甲基丁醇、第二戊醇、第三戊醇、3-甲氧基丁醇、正己醇、2-甲基戊醇、第二己醇、2-乙基丁醇、第二庚醇、3-庚醇、正辛醇、2-乙基己醇、第二辛醇、正壬醇、2,6-二甲基-4-庚醇、正癸醇、第二-十一烷醇、三甲基壬醇、第二-十四烷醇、第二-十七烷醇、糠醇、酚、環己醇、甲基環己醇、3,3,5-三甲基環己醇、苄基醇、二丙酮醇等;多元醇系溶劑為乙二醇、1,2-丙二醇、1,3-丁二醇、2,4-戊二醇、2-甲基-2,4-戊二醇、2,5-己二醇、2,4-庚二醇、2-乙基-1,3-己二醇、二乙二醇、二丙二醇、三乙二醇、三丙二醇等;多元醇部分醚系溶劑為乙二醇單甲基醚、乙二醇單乙基醚、乙二醇單丙基醚、乙二醇單丁基醚、乙二醇單己基醚、乙二醇單苯基醚、乙二醇單-2-乙基丁基醚、二乙二醇單甲基醚、二乙二醇單乙基醚、二乙二醇單丙基醚、二乙二醇單丁基醚、二乙二醇單己基醚、丙二醇單甲基醚、丙二醇單乙基醚、丙二醇單丙基醚、丙二醇單丁基醚、二丙二醇單甲基醚、二丙二醇單乙基醚、二丙二醇單丙基醚等。 The alcohol solvent is exemplified by, for example, a monool solvent: methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, second butanol, third butanol, n-pentanol, isoamyl alcohol, 2-methylbutanol, second pentanol, third pentanol, 3-methoxybutanol, n-hexanol, 2-methylpentanol, second hexanol, 2-ethylbutanol, second g Alcohol, 3-heptanol, n-octanol, 2-ethylhexanol, second octanol, n-nonanol, 2,6-dimethyl-4-heptanol, n-nonanol, second-undecane Alcohol, trimethyl decyl alcohol, second-tetradecanol, second heptadecyl alcohol, decyl alcohol, phenol, cyclohexanol, methylcyclohexanol, 3,3,5-trimethylcyclohexanol , benzyl alcohol, diacetone alcohol, etc.; polyol solvent is ethylene glycol, 1,2-propanediol, 1,3-butanediol, 2,4-pentanediol, 2-methyl-2,4- Pentandiol, 2,5-hexanediol, 2,4-heptanediol, 2-ethyl-1,3-hexanediol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol, etc.; The polyol partial ether solvent is ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, ethylene glycol monohexyl ether, ethylene glycol single Phenyl ether Ethylene glycol mono-2-ethylbutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, two Ethylene glycol monohexyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl Ether, etc.

上述酮系溶劑列舉為例如:鏈狀酮系溶劑為丙酮、甲基乙基酮、甲基正丙基酮、甲基正丁基酮、二乙基酮、甲基異丁基酮、甲基正戊基 酮、乙基正丁基酮、甲基正己基酮、二異丁基酮、三甲基壬酮、2,4-戊二酮、乙醯基丙酮、二丙酮醇、苯乙酮等;環狀酮系溶劑為環戊酮、環己酮、環庚酮、環辛酮、甲基環己酮等。 The ketone solvent is exemplified by, for example, a chain ketone solvent: acetone, methyl ethyl ketone, methyl n-propyl ketone, methyl n-butyl ketone, diethyl ketone, methyl isobutyl ketone, methyl N-pentyl Ketone, ethyl n-butyl ketone, methyl n-hexyl ketone, diisobutyl ketone, trimethyl fluorenone, 2,4-pentanedione, acetyl ketone, diacetone alcohol, acetophenone, etc.; The ketone solvent is cyclopentanone, cyclohexanone, cycloheptanone, cyclooctanone, methylcyclohexanone or the like.

上述醯胺系溶劑列舉為例如:鏈狀醯胺系溶劑為N-甲基甲醯胺、N,N-二甲基甲醯胺、N,N-二乙基甲醯胺、乙醯胺、N-甲基乙醯胺、N,N-二甲基乙醯胺、N-甲基丙醯胺等;環狀醯胺系溶劑為N-甲基吡咯烷酮、N,N’-二甲基咪唑酮等。 The above amide-based solvent is exemplified by, for example, a chain amide-based solvent of N-methylformamide, N,N-dimethylformamide, N,N-diethylformamide, acetamide, N-methylacetamide, N,N-dimethylacetamide, N-methylpropionamide, etc.; the cyclic guanamine solvent is N-methylpyrrolidone, N,N'-dimethylimidazole Ketones, etc.

上述醚系溶劑列舉為例如:鏈狀醚系溶劑為二乙基醚、二丙基醚、二丁基醚、二苯基醚等;環狀醚系溶劑為四氫呋喃、四氫吡喃等。 The ether solvent is, for example, a chain ether solvent such as diethyl ether, dipropyl ether, dibutyl ether or diphenyl ether; and the cyclic ether solvent is tetrahydrofuran or tetrahydropyran.

上述酯系溶劑列舉為例如:乙酸酯系溶劑為乙酸甲酯、乙酸乙酯、乙酸正丙酯、乙酸異丙酯、乙酸正丁酯、乙酸異丁酯、乙酸第二丁酯、乙酸正戊酯、乙酸第二戊酯、乙酸 3-甲氧基丁酯、乙酸甲基戊酯、乙酸 2-乙基丁酯、乙酸 2-乙基己酯、乙酸苄酯、乙酸環己酯、乙酸甲基環己酯、乙酸正壬酯、二乙酸甘醇酯、乙酸甲氧基三甘醇酯等;多元醇部分醚之乙酸酯系溶劑為乙酸乙二醇單甲基醚、乙酸乙二醇單乙基醚、乙酸二乙二醇單甲基醚、乙酸二乙二醇單乙基醚、乙酸二乙二醇單正丁基醚、乙酸丙二 醇單甲基醚、乙酸丙二醇單乙基醚、乙酸丙二醇單丙基醚、乙酸丙二醇單丁基醚、乙酸二丙二醇單甲基醚、乙酸二丙二醇單乙基醚等;碳酸酯系溶劑為碳酸二甲酯、碳酸二乙酯等;其他羧酸之酯系溶劑為乙醯基乙酸甲酯、乙醯基乙酸乙酯、丙酸乙酯、丙酸正丁酯、丙酸異戊酯、草酸二乙酯、草酸二正丁酯、乳酸甲酯、乳酸乙酯、乳酸正丁酯、乳酸正戊酯、丙二酸二乙酯、苯二甲酸二甲酯、苯二甲酸二乙酯等。 The ester solvent is exemplified by, for example, an acetate solvent such as methyl acetate, ethyl acetate, n-propyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, second butyl acetate, or acetic acid. Amyl ester, second amyl acetate, 3-methoxybutyl acetate, methyl amyl acetate, 2-ethylbutyl acetate, 2-ethylhexyl acetate, benzyl acetate, cyclohexyl acetate, acetic acid Methylcyclohexyl ester, n-decyl acetate, glycol diacetate, methoxy triethylene glycol acetate, etc.; the acetate solvent of the partial ether of the polyol is ethylene glycol monomethyl ether, ethylene glycol Alcohol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol mono-n-butyl ether, acrylic acid Alcohol monomethyl ether, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether, etc.; carbonate solvent is carbonic acid Dimethyl ester, diethyl carbonate, etc.; other carboxylic acid ester solvents are methyl acetoxyacetate, ethyl acetoacetate, ethyl propionate, n-butyl propionate, isoamyl propionate, oxalic acid Diethyl ester, di-n-butyl oxalate, methyl lactate, ethyl lactate, n-butyl lactate, n-amyl lactate, diethyl malonate, dimethyl phthalate, diethyl phthalate, and the like.

該等中,以酮系溶劑、酯系溶劑較佳,上述酮系溶劑以環狀酮系溶劑較佳,更好為環己酮,上述酯系溶劑以多元醇部分醚之乙酸酯系溶劑較佳,更好為乙酸丙二醇單甲基醚。 Among these, a ketone solvent and an ester solvent are preferred, and the ketone solvent is preferably a cyclic ketone solvent, more preferably cyclohexanone, and the ester solvent is an acetate partial solvent of a polyol partial ether. More preferably, it is preferably propylene glycol monomethyl ether.

〈[D]其他酸產生劑〉 <[D] Other acid generators>

[D]其他酸產生劑為上述[B]酸產生劑以外之感放射線性酸產生劑,為由磺酸鹽化合物所成,與該磺酸鹽系化合物中之-SO3 -鄰接之碳原子上鍵結有2個以上之氟原子。依據[D]其他酸產生劑,於例如[A]聚合物之含酸解離性基之構造單位為構造單位(I-1)時,可以由該酸產生劑產生之酸作為觸媒,使酸解離性基解離。結果,可提高該感放射線性樹脂組成物之感度。[D]其他酸產生劑可單獨使用1種或組合2種以上使用。 [D] The other acid generator is a radioactive acid generator other than the above [B] acid generator, which is a sulfonate compound and a carbon atom adjacent to -SO 3 - in the sulfonate compound. The upper bond has two or more fluorine atoms. According to [D] other acid generator, when the structural unit of the acid-dissociable group of the [A] polymer is, for example, the structural unit (I-1), the acid produced by the acid generator can be used as a catalyst to cause an acid. Dissociative group dissociation. As a result, the sensitivity of the radiation sensitive resin composition can be improved. [D] The other acid generators may be used alone or in combination of two or more.

[D]其他酸產生劑列舉為例如鋶鹽、四氫噻吩 鎓鹽、錪鹽等鎓鹽化合物等。 [D] Other acid generators are exemplified by, for example, phosphonium salts, tetrahydrothiophenes. Anthracene salt compounds such as barium salts and barium salts.

上述鋶鹽列舉為例如三苯基鋶三氟甲烷磺酸鹽、三苯基鋶九氟正丁烷磺酸鹽、三苯基鋶全氟正辛烷磺酸鹽、環己基 2-氧代環己基甲基鋶三氟甲烷磺酸鹽、二環己基 2-氧代環己基鋶三氟甲烷磺酸鹽、2-氧代環己基二甲基鋶三氟甲烷磺酸鹽、4-羥基-1-萘基二甲基鋶三氟甲烷磺酸鹽、三苯基鋶 2-(金剛烷-1-基)-1,1-二氟乙烷-1-磺酸鹽、三苯基鋶 4-(金剛烷-1-基羰基氧基)-1,1,2,2-四氟丁烷-1-磺酸鹽等。 The above onium salts are exemplified by, for example, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium nonafluorobutanesulfonate, triphenylsulfonium perfluorooctanesulfonate, cyclohexyl 2-oxocyclohexane. Hexylmethyl fluorene trifluoromethane sulfonate, dicyclohexyl 2-oxocyclohexyl fluorene trifluoromethane sulfonate, 2-oxocyclohexyl dimethyl fluorene trifluoromethane sulfonate, 4-hydroxy-1 -naphthyldimethylsulfonium trifluoromethanesulfonate, triphenylsulfonium 2-(adamantan-1-yl)-1,1-difluoroethane-1-sulfonate, triphenylsulfonium 4- (adamantan-1-ylcarbonyloxy)-1,1,2,2-tetrafluorobutane-1-sulfonate, and the like.

上述四氫噻吩鎓鹽列舉為例如4-羥基-1-萘基四氫噻吩鎓三氟甲烷磺酸鹽、4-羥基-1-萘基四氫噻吩鎓九氟正丁烷磺酸鹽、4-羥基-1-萘基四氫噻吩鎓全氟正辛烷磺酸鹽、1-(1-萘基乙醯甲基)四氫噻吩鎓三氟甲烷磺酸鹽、1-(1-萘基乙醯甲基)四氫噻吩鎓九氟正丁烷磺酸鹽、1-(1-萘基乙醯甲基)四氫噻吩鎓全氟正辛烷磺酸鹽、1-(3,5-二甲基-4-羥基苯基)四氫噻吩鎓三氟甲烷磺酸鹽、1-(3,5-二甲基-4-羥基苯基)四氫噻吩鎓九氟正丁烷磺酸鹽、1-(3,5-二甲基-4-羥基苯基)四氫噻吩鎓全氟正辛烷磺酸鹽等。 The above tetrahydrothiophene sulfonium salt is exemplified by, for example, 4-hydroxy-1-naphthyltetrahydrothiophene trifluoromethanesulfonate, 4-hydroxy-1-naphthyltetrahydrothiophene nonafluoro-n-butane sulfonate, 4 -hydroxy-1-naphthyltetrahydrothiophene perfluoro-n-octane sulfonate, 1-(1-naphthylethylidenemethyl)tetrahydrothiophene trifluoromethanesulfonate, 1-(1-naphthyl) Ethylmethyl)tetrahydrothiophene nonafluoro-n-butanesulfonate, 1-(1-naphthylethylidenemethyl)tetrahydrothiophene perfluorooctanesulfonate, 1-(3,5- Dimethyl-4-hydroxyphenyl)tetrahydrothiophene trifluoromethanesulfonate, 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophene nonafluoro-n-butane sulfonate And 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophene fluorinated perfluorooctane sulfonate.

上述錪鹽列舉為例如二苯基錪三氟甲烷磺酸鹽、二苯基錪九氟正丁烷磺酸鹽、二苯基錪全氟正辛烷磺酸鹽、雙(4-第三丁基苯基)錪三氟甲烷磺酸鹽、雙(4-第三丁基苯基)錪九氟正丁烷磺酸鹽、雙(4-第三丁基苯基)錪全氟正辛烷磺酸鹽等。 The above onium salts are exemplified by, for example, diphenylsulfonium trifluoromethanesulfonate, diphenylsulfonium nonafluorobutanesulfonate, diphenylphosphonium perfluorooctanesulfonate, and bis (4-third) Phenyl) fluorinated trifluoromethanesulfonate, bis(4-t-butylphenyl)phosphonium nonafluorobutane sulfonate, bis(4-t-butylphenyl)phosphonium perfluoro-n-octane Sulfonate and the like.

該等中,以鎓鹽化合物較佳,更好為鋶鹽,又更好為三苯基鋶 2-(金剛烷-1-基羰基氧基)-1,1,2,2-四氟丁烷-1-磺酸鹽。 Among these, a phosphonium salt compound is preferred, more preferably a phosphonium salt, and more preferably triphenylsulfonium 2-(adamantan-1-ylcarbonyloxy)-1,1,2,2-tetrafluorobutene. Alkane-1-sulfonate.

[D]其他酸產生劑之含量,就該感放射線性樹脂組成物之感度及顯像性之觀點而言,相對於[A]聚合物100質量份,較好為0.1質量份~30質量份,更好為0.3質量份~20質量份,又更好為1質量份~15質量份。[D]其他酸產生劑之含量未達上述下限時,會有該感放射線性樹脂組成物之感度及顯像性下降之傾向。[D]其他酸產生劑之含量超過上述上限時,會有該感放射線性樹脂組成物對放射線之透明性下降而難以獲得矩形之抗蝕圖型之傾向。 [D] The content of the other acid generator is preferably from 0.1 part by mass to 30 parts by mass based on 100 parts by mass of the [A] polymer, from the viewpoint of sensitivity and developability of the radiation-sensitive linear resin composition. It is preferably from 0.3 part by mass to 20 parts by mass, more preferably from 1 part by mass to 15 parts by mass. When the content of the other acid generator is less than the above lower limit, the sensitivity and developability of the radiation-sensitive resin composition tend to decrease. When the content of the other acid generator exceeds the above upper limit, the transparency of the radiation-sensitive resin composition is less likely to be transparent to the radiation, and it is difficult to obtain a rectangular resist pattern.

〈[E]含氮原子之化合物〉 <[E] Compound containing a nitrogen atom>

[E]含氮原子之化合物為含有氮原子之化合物。[E]含氮原子之化合物可抑制由[B]酸產生劑或[D]其他酸產生劑產生之酸之擴散。該感放射線性樹脂組成物除上述[B]酸產生劑以外,藉由進而含有上述[E]含氮原子之化合物,可更提高LWR性能等。[E]含氮原子之化合物可單獨使用1種或組合2種以上使用。 [E] The compound containing a nitrogen atom is a compound containing a nitrogen atom. [E] The compound containing a nitrogen atom can inhibit the diffusion of an acid generated by the [B] acid generator or [D] other acid generator. In addition to the above-mentioned [B] acid generator, the radiation-sensitive resin composition can further improve LWR performance and the like by further containing the above-mentioned [E] nitrogen atom-containing compound. [E] The compound containing a nitrogen atom may be used alone or in combination of two or more.

[E]含氮原子之化合物列舉為例如胺化合物、含醯胺基之化合物、脲化合物、含氮雜環化合物等。 [E] The compound containing a nitrogen atom is exemplified by, for example, an amine compound, a guanamine group-containing compound, a urea compound, a nitrogen-containing heterocyclic compound, and the like.

上述胺化合物列舉為例如單(環)烷基胺類;二(環)烷基胺類;三(環)烷基胺類;經取代之烷基苯胺或其衍生物;乙二胺、N,N,N’,N’-四甲基乙二胺、 四亞甲基二胺、六亞甲基二胺、4,4’-二胺基二苯基甲烷、4,4’-二胺基二苯基醚、4,4’-二胺基二苯甲酮、4,4’-二胺基二苯基胺、2,2-雙(4-胺基苯基)丙烷、2-(3-胺基苯基)-2-(4-胺基苯基)丙烷、2-(4-胺基苯基)-2-(3-羥基苯基)丙烷、2-(4-胺基苯基)-2-(4-羥基苯基)丙烷、1,4-雙(1-(4-胺基苯基)-1-甲基乙基)苯、1,3-雙(1-(4-胺基苯基)-1-甲基乙基)苯、雙(2-二甲胺基乙基)醚、雙(2-二乙胺基乙基)醚、1-(2-羥基乙基)-2-咪唑啶酮、2-喹噁啉醇、N,N,N’,N’-肆(2-羥基丙基)乙二胺、N,N,N’,N”,N”-五甲基二乙三胺等。 The above amine compounds are exemplified by, for example, mono(cyclo)alkylamines; di(cyclo)alkylamines; tri(cyclo)alkylamines; substituted alkylanilines or derivatives thereof; ethylenediamine, N, N,N',N'-tetramethylethylenediamine, Tetramethyldiamine, hexamethylenediamine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl Methyl ketone, 4,4'-diaminodiphenylamine, 2,2-bis(4-aminophenyl)propane, 2-(3-aminophenyl)-2-(4-aminobenzene Propane, 2-(4-aminophenyl)-2-(3-hydroxyphenyl)propane, 2-(4-aminophenyl)-2-(4-hydroxyphenyl)propane, 1, 4-bis(1-(4-aminophenyl)-1-methylethyl)benzene, 1,3-bis(1-(4-aminophenyl)-1-methylethyl)benzene, Bis(2-dimethylaminoethyl)ether, bis(2-diethylaminoethyl)ether, 1-(2-hydroxyethyl)-2-imidazolidinone, 2-quinoxalinol, N , N, N', N'-肆 (2-hydroxypropyl) ethylenediamine, N, N, N', N", N"-pentamethyldiethylenetriamine and the like.

上述含醯胺基之化合物舉例有例如N-第三丁氧基羰基-4-羥基哌啶等之含N-第三丁氧羰基之胺基化合物;N-第三戊氧基羰基-4-羥基哌啶等含N-第三戊氧基羰基之胺基化合物;甲醯胺、N-甲基甲醯胺、N,N-二甲基甲醯胺、乙醯胺、N-甲基乙醯胺、N,N-二甲基乙醯胺、丙醯胺、苯甲醯胺、吡咯烷酮、N-甲基吡咯烷酮、N-乙醯基-1-金剛烷胺、異氰尿酸叁(2-羥基乙基)酯等。 The above-mentioned amide group-containing compound is exemplified by an N-tert-butoxycarbonyl group-containing amine compound such as N-tert-butoxycarbonyl-4-hydroxypiperidine; N-third pentyloxycarbonyl-4- N-tert-methoxycarbonyl-containing amine compound such as hydroxypiperidine; formamide, N-methylformamide, N,N-dimethylformamide, acetamide, N-methyl Indoleamine, N,N-dimethylacetamide, acetamide, benzamide, pyrrolidone, N-methylpyrrolidone, N-ethinyl-1-adamantanamine, guanidinium isocyanurate (2- Hydroxyethyl) ester and the like.

上述脲化合物列舉為例如尿素、甲基脲、1,1-二甲基脲、1,3-二甲基脲、1,1,3,3-四甲基脲、1,3-二苯基脲、三正丁基硫脲等。 The above urea compounds are exemplified by, for example, urea, methyl urea, 1,1-dimethylurea, 1,3-dimethylurea, 1,1,3,3-tetramethylurea, 1,3-diphenyl. Urea, tri-n-butyl thiourea, and the like.

上述含氮雜環化合物列舉為例如2-苯基咪唑等咪唑類;吡啶類;哌嗪類;吡嗪、吡唑、嗒嗪、喹噁啉、嘌呤、吡咯啶、哌啶、哌啶乙醇、3-哌啶基-1,2-丙二醇、嗎啉、4-甲基嗎啉、1-(4-嗎啉基)乙醇、4-乙醯基 嗎啉、3-(N-嗎啉基)-1,2-丙二醇、1,4-二甲基哌嗪、1,4-二氮雜雙環[2.2.2]辛烷等。 The nitrogen-containing heterocyclic compound is exemplified by, for example, an imidazole such as 2-phenylimidazole; a pyridine; a piperazine; a pyrazine, a pyrazole, a pyridazine, a quinoxaline, an anthracene, a pyrrolidine, a piperidine, or a piperidine. 3-piperidinyl-1,2-propanediol, morpholine, 4-methylmorpholine, 1-(4-morpholinyl)ethanol, 4-ethylidene Morpholine, 3-(N-morpholinyl)-1,2-propanediol, 1,4-dimethylpiperazine, 1,4-diazabicyclo[2.2.2]octane, and the like.

該等中,以含醯胺基之化合物較佳,更好為含N-第三丁氧基羰基之胺基化合物,又更好為N-第三丁氧基羰基-4-間-哌啶。 Among these, a compound containing a guanamine group is preferred, more preferably an N-tert-butoxycarbonyl-containing amine compound, more preferably N-tert-butoxycarbonyl-4-m-piperidine. .

[E]含氮原子之化合物之含量相對於[A]聚合物100質量份,較好為30質量份以下,更好為0.1質量份~20質量份,又更好為0.5質量份~10質量份。藉由使[E]含氮原子之化合物之含量為上述範圍,可更提高該感放射線性樹脂組成物之LWR性能等。 The content of the [E] nitrogen atom-containing compound is preferably 30 parts by mass or less, more preferably 0.1 part by mass to 20 parts by mass, even more preferably 0.5 part by mass to 10 parts by mass per 100 parts by mass of the [A] polymer. Share. By setting the content of the [E] nitrogen atom-containing compound to the above range, the LWR performance and the like of the radiation sensitive resin composition can be further improved.

〈[F]含氟原子之聚合物〉 <[F] Polymer of fluorine atom>

[F]含氟原子之聚合物為含氟原子之聚合物。依據該感放射線性樹脂組成物,除[A]聚合物以外藉由進而含有[F]含氟原子之聚合物,而使[F]含氟原子之聚合物偏在化於所形成之抗蝕膜之表層,結果可提高抗蝕膜表面之疏水性。藉此,在進行液浸曝光時等,自抗蝕膜之物質溶出抑制性優異,同時可充分提高抗蝕膜與液浸液之後退接觸角,而可進行更高速掃描。 [F] The polymer of a fluorine atom is a fluorine atom-containing polymer. According to the radiation sensitive resin composition, the polymer of the [F] fluorine atom is biased to the formed resist film by a polymer further containing [F] fluorine atom in addition to the [A] polymer. The surface layer can improve the hydrophobicity of the surface of the resist film. Thereby, when the liquid immersion exposure is performed, etc., the substance elution suppressing property from the resist film is excellent, and the retreat contact angle of the resist film and the liquid immersion liquid can be sufficiently increased, and higher-speed scanning can be performed.

[F]含氟原子之聚合物並無特別限制,列舉為(1)其本身不溶於顯像液中,藉由酸之作用成為鹼可溶性之聚合物,(2)其本身可溶於顯像液中,藉由酸之作用而增大鹼可溶性之聚合物,(3)其本身不溶於顯像液中,藉由鹼之作用成為鹼可溶性之聚合物,(4)其本身 可溶於顯像液中,藉由鹼之作用而增大鹼可溶性之聚合物等。 [F] The polymer of the fluorine atom is not particularly limited, and is exemplified by (1) itself which is insoluble in the developing solution, which becomes an alkali-soluble polymer by the action of an acid, and (2) which is soluble in the image itself. In the liquid, the alkali-soluble polymer is increased by the action of an acid, (3) it is insoluble in the developing solution itself, becomes an alkali-soluble polymer by the action of the alkali, and (4) itself It is soluble in a developing solution, and an alkali-soluble polymer or the like is increased by the action of a base.

[F]含氟原子之聚合物之樣態列舉為例如:於主鏈上鍵結有氟化烷基之構造;於側鏈上鍵結有氟化烷基之構造;於主鏈與側鏈鍵結有氟化烷基之構造等。 [F] A form of a fluorine atom-containing polymer is exemplified by a structure in which a fluorinated alkyl group is bonded to a main chain, a structure in which a fluorinated alkyl group is bonded to a side chain, and a main chain and a side chain. The structure of the fluorinated alkyl group is bonded to the bond.

獲得於主鏈上鍵結有氟化烷基之構造之單體列舉為例如α-三氟甲基丙烯酸酯化合物、β-三氟甲基丙烯酸酯化合物、α,β-三氟甲基丙烯酸酯化合物、1種以上之乙烯基部位之氫原子經三氟甲基等氟化烷基取代之化合物等。 The monomer obtained by the structure in which a fluorinated alkyl group is bonded to the main chain is exemplified by, for example, an α-trifluoromethacrylate compound, a β-trifluoromethacrylate compound, and α,β-trifluoromethacrylate. A compound or a compound in which one or more hydrogen atoms of a vinyl moiety are substituted by a fluorinated alkyl group such as a trifluoromethyl group.

獲得於側鏈上鍵結有氟化烷基之構造之單體列舉為例如降冰片烯等之脂環式烯烴化合物之側鏈為氟化烷基或其衍生物者、丙烯酸或甲基丙烯酸之側鏈為氟化烷基或其衍生物之酯化合物、1種以上之烯烴之側鏈(不含雙鍵之部位)為氟化烷基或其衍生物者等。 The monomer having a structure in which a fluorinated alkyl group is bonded to a side chain is exemplified by a fluorinated alkyl group or a derivative thereof, such as norbornene or the like, a fluorinated alkyl group or a derivative thereof, acrylic acid or methacrylic acid. The side chain is an ester compound of a fluorinated alkyl group or a derivative thereof, and a side chain (a site containing no double bond) of one or more kinds of olefins is a fluorinated alkyl group or a derivative thereof.

獲得於主鏈與側鏈上鍵結有氟化烷基之構造之單體列舉為例如α-三氟甲基丙烯酸、β-三氟甲基丙烯酸、α,β-三氟甲基丙烯酸等之側鏈為氟化烷基或其衍生物之酯化合物,1種以上之乙烯基部位之氫原子經三氟甲基等之氟化烷基取代之化合物之側鏈經氟化烷基或其衍生基取代者,1種以上之鍵結於脂環式烯烴化合物之雙鍵上之氫原子經三氟甲基等之氟化烷基取代,且側鏈為氟化烷基或其衍生物者等。又,該脂環式烯烴化合物係表示環之一 部份為雙鍵之化合物。 The monomer having a structure in which a fluorinated alkyl group is bonded to the main chain and the side chain is exemplified by, for example, α-trifluoromethacrylic acid, β-trifluoromethylacrylic acid, α,β-trifluoromethacrylic acid, or the like. The side chain is an ester compound of a fluorinated alkyl group or a derivative thereof, and a side chain of a compound in which one or more hydrogen atoms of a vinyl moiety are substituted with a fluorinated alkyl group such as a trifluoromethyl group is subjected to a fluorinated alkyl group or a derivative thereof. The substituent, one or more hydrogen atoms bonded to the double bond of the alicyclic olefin compound are substituted by a fluorinated alkyl group such as a trifluoromethyl group, and the side chain is a fluorinated alkyl group or a derivative thereof. . Further, the alicyclic olefin compound is one of the rings Part of the compound is a double bond.

[F]含氟原子之聚合物較好具有以下述式(6)表示之構造單位(f1)及/或以下述式(7)表示之構造單位(f2)。且,[F]含氟原子之聚合物亦可具有構造單位(f1)及構造單位(f2)以外之「其他構造單位」。又,[F]含氟原子之聚合物亦可含1種或2種以上之各構造單位。以下針對各構造單位加以詳述。 The polymer of the fluorine atom-containing atom preferably has a structural unit (f1) represented by the following formula (6) and/or a structural unit (f2) represented by the following formula (7). Further, the [F] fluorine atom-containing polymer may have "other structural units" other than the structural unit (f1) and the structural unit (f2). Further, the polymer of the [F] fluorine-containing atom may contain one or two or more structural units. The following is a detailed description of each structural unit.

[構造單位(f1)] [structural unit (f1)]

構造單位(f1)為以下述式(6)表示之構造單位。 The structural unit (f1) is a structural unit represented by the following formula (6).

上述式(6)中,Rf1為氫原子、氟原子、甲基或三氟甲基。Rf2為具有氟原子之碳數1~6之直鏈狀或分支狀之烷基或具有氟原子之碳數4~20之1價脂環式烴基。但,上述烷基及脂環式烴基所具有之氫原子之一部分或全部可經取代。 In the above formula (6), R f1 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. R f2 is a linear or branched alkyl group having 1 to 6 carbon atoms of a fluorine atom or a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms and having a fluorine atom. However, some or all of the hydrogen atoms of the above alkyl group and the alicyclic hydrocarbon group may be substituted.

上述碳數1~6之直鏈狀或分支狀之烷基,列舉為例如甲基、乙基、丙基、丁基等。 The linear or branched alkyl group having 1 to 6 carbon atoms is exemplified by a methyl group, an ethyl group, a propyl group, a butyl group or the like.

上述碳數4~20之1價脂環式烴基列舉為例如環戊基、環戊基丙基、環己基、環己基甲基、環庚基、環 辛基、環辛基甲基等。 The above-mentioned monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms is exemplified by, for example, a cyclopentyl group, a cyclopentylpropyl group, a cyclohexyl group, a cyclohexylmethyl group, a cycloheptyl group, and a ring. Octyl, cyclooctylmethyl and the like.

獲得構造單位(f1)之單體列舉為例如(甲基)丙烯酸三氟甲酯、(甲基)丙烯酸 2,2,2-三氟乙酯、(甲基)丙烯酸全氟乙酯、(甲基)丙烯酸全氟正丙酯、(甲基)丙烯酸全氟異丙酯、(甲基)丙烯酸全氟正丁酯、(甲基)丙烯酸全氟異丁酯、(甲基)丙烯酸全氟第三丁酯、(甲基)丙烯酸全氟環己酯、(甲基)丙烯酸 2-(1,1,1,3,3,3-六氟)丙酯、(甲基)丙烯酸 1-(2,2,3,3,4,4,5,5-八氟)戊酯、(甲基)丙烯酸 1-(2,2,3,3,4,4,5,5-八氟)己酯、(甲基)丙烯酸全氟環己基甲酯、(甲基)丙烯酸 1-(2,2,3,3,3-五氟)丙酯、(甲基)丙烯酸 1-(2,2,3,3,4,4,4-七氟)戊酯、(甲基)丙烯酸 1-(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-十七氟)癸酯、(甲基)丙烯酸 1-(5-三氟甲基-3,3,4,4,5,6,6,6-八氟)己酯等。 The monomer which obtains the structural unit (f1) is exemplified by, for example, trifluoromethyl (meth)acrylate, 2,2,2-trifluoroethyl (meth)acrylate, perfluoroethyl (meth)acrylate, (a) Perfluoropropyl n-propyl acrylate, perfluoroisopropyl (meth) acrylate, perfluoro-n-butyl (meth) acrylate, perfluoroisobutyl (meth) acrylate, perfluoro(meth) acrylate Tributyl ester, perfluorocyclohexyl (meth)acrylate, 2-(1,1,1,3,3,3-hexafluoro)propyl (meth)acrylate, 1-(2) (meth)acrylate , 2,3,3,4,4,5,5-octafluoro)pentyl ester, 1-(2,2,3,3,4,4,5,5-octafluoro)hexyl (meth)acrylate , (Perfluorocyclohexyl methyl (meth) acrylate, 1-(2, 2, 3, 3, 3-pentafluoro) propyl (meth) acrylate, 1-(2, 2, 3) (meth) acrylate ,3,4,4,4-heptafluoro)pentyl ester, (meth)acrylic acid 1-(3,3,4,4,5,5,6,6,7,7,8,8,9,9 ,10,10,10-heptadecafluoro)decyl ester, 1-(5-trifluoromethyl-3,3,4,4,5,6,6,6-octafluoro)hexyl (meth)acrylate Wait.

至於構造單位(f1)較好為以下述式(6-1)及(6-2)表示之構造單位。 The structural unit (f1) is preferably a structural unit represented by the following formulas (6-1) and (6-2).

上述式(6-1)及(6-2)中,Rf1與上述式(6)同義。 In the above formulae (6-1) and (6-2), R f1 is synonymous with the above formula (6).

該等中,更好為以式(6-1)表示之構造單位。 Among these, it is more preferably a structural unit represented by the formula (6-1).

構造單位(f1)之含有比例相對於構成[F]含氟原子之聚合物之全部構造單位,較好為10莫耳%~70莫耳%,更好為20莫耳%~50莫耳%。 The content ratio of the structural unit (f1) is preferably from 10 mol% to 70 mol%, more preferably from 20 mol% to 50 mol%, based on the entire structural unit of the polymer constituting the [F] fluorine atom. .

[構造單位(f2)] [structural unit (f2)]

構造單位(f2)為以下述式(7)表示之構造單位。 The structural unit (f2) is a structural unit represented by the following formula (7).

上述式(7)中,Rf3為氫原子、氟原子、甲基或三氟甲基。Rf4為(k+1)價之連結基。X1為具有氟原子之2價連結基。Rf5為氫原子或1價有機基。K為1~3之整數。但,k為2或3時,複數個X1及Rf5可分別相同亦可不同。 In the above formula (7), R f3 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. R f4 is a linking group of (k+1) valence. X 1 is a divalent linking group having a fluorine atom. R f5 is a hydrogen atom or a monovalent organic group. K is an integer from 1 to 3. However, when k is 2 or 3, the plurality of X 1 and R f5 may be the same or different.

上述式(7)中,以Rf4表示之(k+1)價連結基列舉為例如碳數1~30之直鏈狀或分支狀之烴基、碳數3~30之脂環式烴基、碳數6~30之芳香族烴基、或該等之 基與由氧原子、硫原子、醚基、酯基、羰基、亞胺基及醯胺基所組成群阻選出之1種以上之基組合而成之基。另外,上述(k+1)價之連結基亦可具有取代基。 In the above formula (7), the (k+1)-valent linking group represented by R f4 is, for example, a linear or branched hydrocarbon group having 1 to 30 carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbon atoms, or carbon. a number of 6 to 30 aromatic hydrocarbon groups, or a combination of one or more groups selected from the group consisting of an oxygen atom, a sulfur atom, an ether group, an ester group, a carbonyl group, an imine group, and a guanamine group. The foundation of the foundation. Further, the above (k+1)-valent linking group may have a substituent.

上述碳數1~30之直鏈狀或分支狀之烴基列舉為例如由甲烷、乙烷、丙烷、丁烷、戊烷、己烷、庚烷、癸烷、二十烷、三十烷等烴基去除(k+1)個氫原子之基等。 The above-mentioned linear or branched hydrocarbon group having 1 to 30 carbon atoms is exemplified by a hydrocarbon group such as methane, ethane, propane, butane, pentane, hexane, heptane, decane, eicosane or triacontan. The basis of (k+1) hydrogen atoms is removed.

上述碳數3~30之脂環式烴基列舉為例如自下列去除(k+1)個氫原子而成之基等:單環式飽和烴之環丙烷、環丁烷、環戊烷、環己烷、環庚烷、環辛烷、環癸烷、甲基環己烷、乙基環己烷等;單環式不飽和烴之環丁烯、環戊烯、環己烯、環庚烯、環辛烯、環癸烯、環戊二烯、環己二烯、環辛二烯、環癸二烯等;多環式飽和烴之雙環[2.2.1]庚烷、雙環[2.2.2]辛烷、三環[5.2.1.02,6]癸烷、三環[3.3.1.13,7]癸烷、四環[6.2.1.13,6.02,7]十二烷、金剛烷等;多環式不飽和烴之雙環[2.2.1]庚烯、雙環[2.2.2]辛烯、三環[5.2.1.02,6]癸烯、三環[3.3.1.13,7]癸烯、四環[6.2.1.13,6.02,7]十二碳烯等。 The above-mentioned alicyclic hydrocarbon group having 3 to 30 carbon atoms is exemplified by, for example, a group in which (k+1) hydrogen atoms are removed from the following: cyclopropane, cyclobutane, cyclopentane, cyclohexane of a monocyclic saturated hydrocarbon Alkane, cycloheptane, cyclooctane, cyclodecane, methylcyclohexane, ethylcyclohexane, etc.; cyclobutene, cyclopentene, cyclohexene, cycloheptene, monocyclic unsaturated hydrocarbons, Cyclooctene, cyclodecene, cyclopentadiene, cyclohexadiene, cyclooctadiene, cyclodecadiene, etc.; polycyclic saturated hydrocarbon bicyclo [2.2.1] heptane, bicyclo [2.2.2] Octane, tricyclo[5.2.1.0 2,6 ]decane, tricyclo[3.3.1.1 3,7 ]decane, tetracyclo[6.2.1.1 3,6 .0 2,7 ]dodecane, adamantane Etc; polycyclic unsaturated hydrocarbon bicyclo [2.2.1] heptene, bicyclo [2.2.2] octene, tricyclo [5.2.1.0 2,6 ] decene, tricyclo[3.3.1.1 3,7 ] Terpene, tetracyclo[6.2.1.1 3,6 .0 2,7 ] dodecene and the like.

上述碳數6~30之芳香族烴基列舉為自例如苯、萘、菲、蒽、并四苯、并五苯、芘、苉(picene)、甲苯、二甲苯、乙基苯、均三甲苯、異丙苯等芳香族烴去除(k+1)個氫原子之基等。 The above aromatic hydrocarbon group having 6 to 30 carbon atoms is exemplified by, for example, benzene, naphthalene, phenanthrene, anthracene, tetracene, pentacene, fluorene, picene, toluene, xylene, ethylbenzene, mesitylene, An aromatic hydrocarbon such as cumene removes a base of (k+1) hydrogen atoms.

上述式(7)中,以X1表示之具有氟原子之2價連結基列舉為例如具有氟原子之碳數1~20之2價直鏈狀烴基。X1列舉為例如以下述式(X1-1)~(X1-6)表示之基等。 In the above formula (7), the divalent linking group having a fluorine atom represented by X 1 is, for example, a divalent linear hydrocarbon group having 1 to 20 carbon atoms and having a fluorine atom. X 1 is, for example, a group represented by the following formulas (X1-1) to (X1-6).

X1較好為以上述式(X1-1)及(X1-2)表示之基,更好為以式(X1-2)表示之基。 X 1 is preferably a group represented by the above formulas (X1-1) and (X1-2), more preferably a group represented by the formula (X1-2).

上述式(7)中,以Rf5表示之1價有機基列舉為例如碳數1~30之直鏈狀或分支狀之烴基、碳數3~30之脂環式烴基、碳數6~30之芳香族烴基、或該等之基與由氧原子、硫原子、醚基、酯基、羰基、亞胺基及醯胺基所組成群阻選出之1種以上之基組合而成之基。 In the above formula (7), the monovalent organic group represented by R f5 is, for example, a linear or branched hydrocarbon group having 1 to 30 carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbon atoms, and a carbon number of 6 to 30. The aromatic hydrocarbon group or a group in which the group is combined with one or more groups selected from the group consisting of an oxygen atom, a sulfur atom, an ether group, an ester group, a carbonyl group, an imine group, and a guanamine group.

上述構造單位(f2)列舉為例如以下述式(7-1)及式(7-2)表示之構造單位等。 The structural unit (f2) is exemplified by a structural unit represented by the following formula (7-1) and formula (7-2).

上述式(7-1)中,Rf4為碳數1~20之2價值鏈狀、分支狀或環狀之飽和或不飽和烴基。Rf3、X1及Rf5與上述式(7)同義。 In the above formula (7-1), R f4 is a saturated or unsaturated hydrocarbon group having a chain-like, branched or cyclic chain of 1 to 20 carbon atoms. R f3 , X 1 and R f5 are synonymous with the above formula (7).

上述式(7-2)中,Rf3、X1、Rf5及k與上述式(7)同義。但,k為2或3時,複數個X1及Rf5可分別相同亦可不同。 In the above formula (7-2), R f3 , X 1 , R f5 and k have the same meanings as in the above formula (7). However, when k is 2 or 3, the plurality of X 1 and R f5 may be the same or different.

以上述式(7-1)及式(7-2)表示之構造單位列舉為例如以下述式(7-1-1)~(7-1-3)及式(7-2-1)表示之構造單位等。 The structural unit represented by the above formula (7-1) and formula (7-2) is, for example, represented by the following formulas (7-1-1) to (7-1-3) and formula (7-2-1). Construction unit, etc.

上述式(7-1-1)~(7-1-3)及式(7-2-1)中,Rf3與上述式(7)同義。 In the above formulae (7-1-1) to (7-1-3) and (7-2-1), R f3 is synonymous with the above formula (7).

至於構造單位(f2)較好為以上述式(7-1)表示之構造單位,更好為以上述式(7-1-3)表示之構造單位。 The structural unit (f2) is preferably a structural unit represented by the above formula (7-1), and more preferably a structural unit represented by the above formula (7-1-3).

獲得構造單位(f2)之單體列舉為例如(甲基)丙烯酸[2-(1-乙基氧基羰基-1,1-二氟正丁基)]酯、(甲基)丙烯酸(1,1,1-三氟-2-三氟甲基-2-羥基-3-丙基)酯、(甲基)丙烯酸(1,1,1-三氟-2-三氟甲基-2-羥基-4-丁基)酯、(甲基)丙烯酸(1,1,1-三氟-2-三氟甲基-2-羥基-5-戊基)酯、(甲基)丙烯酸2-{[5-(1’,1’,1’-三氟-2’-三氟甲基-2’-羥基)丙基]雙環[2.2.1]庚基}酯等。該等中,以(甲基)丙烯酸[2-(1-乙基氧基羰基-1,1-二氟正丁基)]酯較佳。 The monomer which obtains the structural unit (f2) is exemplified by, for example, [2-(1-ethyloxycarbonyl-1,1-difluoro-n-butyl)](meth)acrylate, (meth)acrylic acid (1, 1,1-trifluoro-2-trifluoromethyl-2-hydroxy-3-propyl)ester, (meth)acrylic acid (1,1,1-trifluoro-2-trifluoromethyl-2-hydroxyl) -4-butyl)ester, (1,1,1-trifluoro-2-trifluoromethyl-2-hydroxy-5-pentyl) (meth)acrylate, 2-{[()(meth)acrylate 5-(1',1',1'-trifluoro-2'-trifluoromethyl-2'-hydroxy)propyl]bicyclo[2.2.1]heptyl}ester. Among these, [2-(1-ethyloxycarbonyl-1,1-difluoro-n-butyl)] (meth)acrylate is preferred.

構造單位(f2)之含有比例相對於構成[F]含 氟原子之聚合物之全部構造單位,較好為30莫耳%~90莫耳%,更好為50莫耳%~80莫耳%。 The content ratio of the structural unit (f2) is relative to the composition [F] The total structural unit of the polymer of the fluorine atom is preferably from 30 mol% to 90 mol%, more preferably from 50 mol% to 80 mol%.

[其他構造單位] [Other construction units]

[F]含氟原子之聚合物亦可包含構造單位(f1)、構造單位(f2)以外之「其他構造單位」。其他構造單位列舉為例如[A]聚合物之構造單位(I)等。 [F] The fluorine atom-containing polymer may also contain "other structural units" other than the structural unit (f1) and the structural unit (f2). Other structural units are listed, for example, as structural units (I) of [A] polymer and the like.

其他構造單位之含有比例相對於構成[F]含氟原子之聚合物之全部構造單位較好為5莫耳%~90莫耳%,更好為10莫耳%~80莫耳%,又更好為20莫耳%~70莫耳%。 The content ratio of the other structural unit is preferably from 5 mol% to 90 mol%, more preferably from 10 mol% to 80 mol%, and more preferably from 10 mol% to 80 mol%, and more preferably the total structural unit of the polymer constituting the [F] fluorine atom. Good for 20% to 70%.

[F]含氟原子之聚合物之含量相對於[A]聚合物100質量份較好為20質量份以下,更好為0.1質量份~15質量份,又更好為1質量份~10質量份,最好為1質量份~6質量份。[F]含氟原子之聚合物之含量超過上述上限時,會有阻劑膜表面之撥水性過高而引起顯像不良之情況。 The content of the polymer of the fluorine atom-containing atom is preferably 20 parts by mass or less, more preferably 0.1 part by mass to 15 parts by mass, even more preferably 1 part by mass to 10 parts by mass per 100 parts by mass of the [A] polymer. The portion is preferably from 1 part by mass to 6 parts by mass. When the content of the polymer of the fluorine-containing atom exceeds the above upper limit, the water repellency of the surface of the resist film may be too high to cause development failure.

[F]含氟原子之聚合物之氟原子含有率較好比[A]聚合物之氟原子含有率大。[F]含氟原子之聚合物中之氟原子含有率比[A]聚合物大時,可進而提高由含有[A]聚合物及[F]含氟原子之聚合物之感放射線性樹脂組成物形成之抗蝕膜表面之撥水性。[F]含氟原子之聚合物之氟原子含有率與[A]聚合物之氟原子含有率之差較好為1質量%以上,更好為3質量%以上。 The fluorine atom content of the [F] fluorine atom-containing polymer is preferably larger than the fluorine atom content of the [A] polymer. When the fluorine atom content in the polymer of the fluorine atom-containing polymer is larger than that of the [A] polymer, the composition of the radiation-sensitive resin containing the polymer containing the [A] polymer and the [F] fluorine atom can be further improved. The water repellency of the surface of the resist film formed by the object. The difference between the fluorine atom content of the [F] fluorine-containing polymer and the fluorine atom content of the [A] polymer is preferably 1% by mass or more, more preferably 3% by mass or more.

且,[F]含氟原子之聚合物之氟原子含有率較好為1質量%以上,更好為3質量%以上,又更好為5質量%以上,最好為10質量%以上。 Further, the fluorine atom content of the [F] fluorine atom-containing polymer is preferably 1% by mass or more, more preferably 3% by mass or more, still more preferably 5% by mass or more, and most preferably 10% by mass or more.

又,該氟原子含有率(質量%)可由13C-NMR求得聚合物之構造,由其構造算出。 In addition, the fluorine atom content (% by mass) was determined by 13 C-NMR to determine the structure of the polymer, and its structure was calculated.

〈[F]含氟原子之聚合物之合成方法〉 <[F] Synthesis method of polymer containing fluorine atom>

[F]含氟原子之聚合物可例如使用自由基聚合起始劑,使對應於特定之各構造單位之單體在適當溶劑中聚合而製造。 The [F] fluorine atom-containing polymer can be produced, for example, by polymerizing a monomer corresponding to each specific structural unit in a suitable solvent using a radical polymerization initiator.

上述自由基聚合起始劑列舉為例如與[A]聚合物之合成方法中使用之自由基聚合起始劑相同者等。上述聚合溶劑列舉為例如與[A]聚合物之合成方法中使用之聚合溶劑相同者等。 The radical polymerization initiator is exemplified by, for example, the same as the radical polymerization initiator used in the synthesis method of the [A] polymer. The above-mentioned polymerization solvent is exemplified by, for example, the same as the polymerization solvent used in the synthesis method of the [A] polymer.

上述聚合中之反應溫度通常為40℃~150℃,較好為50℃~120℃。反應時間通常為1小時~48小時,較好為1小時~24小時。 The reaction temperature in the above polymerization is usually from 40 ° C to 150 ° C, preferably from 50 ° C to 120 ° C. The reaction time is usually from 1 hour to 48 hours, preferably from 1 hour to 24 hours.

[F]含氟原子之聚合物之Mw較好為1,000~50,000,更好為2,000~30,000,又更好為3,000~10,000。[F]含氟原子之聚合物之Mw未達1,000時,無法獲得充分之後退接觸角。另一方面,Mw超過50,000時,會有作為抗蝕劑時之顯像性下降之傾向。 The Mw of the [F] fluorine atom-containing polymer is preferably from 1,000 to 50,000, more preferably from 2,000 to 30,000, still more preferably from 3,000 to 10,000. When the Mw of the [F] fluorine-containing polymer is less than 1,000, a sufficient receding contact angle cannot be obtained. On the other hand, when Mw exceeds 50,000, the development property as a resist tends to decrease.

[F]含氟原子之聚合物之Mw與Mn之比(Mw/Mn)較好為1~5,更好為1~3。 The ratio of Mw to Mn (Mw/Mn) of the [F] fluorine atom-containing polymer is preferably from 1 to 5, more preferably from 1 to 3.

〈[G]偏在化促進劑〉 <[G] partialization accelerator>

[G]偏在化促劑進為使[F]含氟原子之聚合物更有效地偏析於抗蝕膜表面之成分。藉由使該感放射線性樹脂組成物含有[G]偏在化促進劑,可使[F]含氟原子之聚合物更有效地偏析在抗蝕膜表面,結果可減少[F]含氟原子聚合物之使用量。[G]偏在化促進劑列舉為例如內酯化合物、碳酸酯化合物、腈化合物、多元醇等。[G]偏在化促進劑可單獨使用1種,或組合2種以上使用。 The [G] biasing accelerator is a component which causes the [F] fluorine atom-containing polymer to more effectively segregate on the surface of the resist film. By including the [G] biasing accelerator in the radiation sensitive resin composition, the polymer of the [F] fluorine atom can be more effectively segregated on the surface of the resist film, and as a result, [F] fluorine atom polymerization can be reduced. The amount of use of the object. The [G] partialization accelerator is exemplified by a lactone compound, a carbonate compound, a nitrile compound, a polyhydric alcohol, and the like. The [G] partialization accelerator may be used singly or in combination of two or more.

上述內酯化合物列舉為例如γ-丁內酯、戊內酯、甲羥戊腈、降冰片烷內酯等。 The above lactone compound is exemplified by, for example, γ-butyrolactone, valerolactone, mevalononitrile, norbornane lactone and the like.

上述碳酸酯化合物列舉為例如碳酸伸丙酯、碳酸伸乙酯、碳酸伸丁酯、碳酸伸乙烯酯等。 The above carbonate compound is exemplified by, for example, propyl carbonate, ethyl carbonate, butyl carbonate, and vinyl carbonate.

上述腈化合物列舉為例如丁二腈等。 The above nitrile compound is exemplified by, for example, succinonitrile.

上述多元醇列舉為例如丙三醇等。 The above polyol is exemplified by glycerin or the like.

該等中,以內酯化合物較佳,更好為γ-丁內酯。 Among these, a lactone compound is preferred, and more preferably γ-butyrolactone.

[G]偏在化促進劑之含量相對於[A]聚合物100質量份較好為5質量份~300質量份,更好為10質量份~100質量份,又更好為20質量份~70質量份。 The content of the [G] partialization accelerator is preferably from 5 parts by mass to 300 parts by mass, more preferably from 10 parts by mass to 100 parts by mass, even more preferably from 20 parts by mass to 100 parts by mass per 100 parts by mass of the [A] polymer. Parts by mass.

〈其他任意成分〉 <Other optional ingredients>

該感放射線性樹脂組成物除上述[A]成分~[G]成分以外,亦可含有藉由放射線之照射產生羧酸之化合物、界面 活性劑、含有脂環式骨架之化合物、增感劑等其他任意成分。其他任意成分之各成分可單獨使用1種或組合2種以上使用。另外,其他任意成分之含量可依據其目的適當決定。 The radiation sensitive resin composition may contain, in addition to the above components [A] to [G], a compound which forms a carboxylic acid by irradiation of radiation, and an interface. Other optional components such as an active agent, a compound containing an alicyclic skeleton, and a sensitizer. Each of the components of the other optional components may be used alone or in combination of two or more. In addition, the content of other optional components may be appropriately determined depending on the purpose thereof.

藉由上述放射線之照射產生羧酸之化合物通常為由放射線分解性鎓陽離子與羧酸根陰離子構成之羧酸鹽化合物。該羧酸根陰離子可捕捉由[D]其他酸產生劑產生之酸,但在曝光部中藉由放射線照射使上述放射線分解性鎓陽離子分解而生成質子,由該質子與上述羧酸根陰離子產生羧酸,故上述酸之捕捉功能下降。據此,藉放射線之照射產生羧酸之化合物由於在未曝光部中具有抑制酸擴散之功能,故更提高曝光部與未曝光部之對比性,結果提高該感放射線性樹脂組成物之微影性能。 The compound which generates a carboxylic acid by irradiation with the above-mentioned radiation is usually a carboxylate compound composed of a radiation-decomposable phosphonium cation and a carboxylate anion. The carboxylate anion can capture an acid produced by the [D] other acid generator, but the radiation-decomposable cation is decomposed by radiation irradiation in the exposed portion to form a proton, and the carboxylic acid is generated from the proton and the carboxylate anion. Therefore, the above-mentioned acid capture function is degraded. According to this, since the compound which generates a carboxylic acid by irradiation of radiation has a function of suppressing acid diffusion in the unexposed portion, the contrast between the exposed portion and the unexposed portion is further improved, and as a result, the lithography of the radiation-sensitive resin composition is improved. performance.

上述羧酸鹽化合物列舉為例如三苯基鋶水楊酸鹽、第三丁基苯基二苯基鋶水楊酸鹽、三苯基鋶乙酸鹽、萘基二苯基鋶乙酸鹽、三苯基鋶丁酸鹽、三苯基鋶2,2-二甲基丙酸鹽、三苯基鋶五氟苯甲酸鹽、二苯基錪苯甲酸鹽等。 The above carboxylate compounds are exemplified by, for example, triphenylsulfonium salicylate, tert-butylphenyldiphenylsulfonium salicylate, triphenylsulfonium acetate, naphthyldiphenylphosphonium acetate, triphenylbenzene. Base butyrate, triphenylsulfonium 2,2-dimethylpropionate, triphenylsulfonium pentafluorobenzoate, diphenylsulfonium benzoate and the like.

上述藉由放射線之照射產生羧酸之化合物之含量相對於[A]聚合物100質量份,較好為0質量份~20質量份,更好為0.1質量份~15質量份。藉由使含量為上述範圍,而更提高該感放射線性樹脂組成物之微影性能。 The content of the compound which generates a carboxylic acid by irradiation with radiation is preferably from 0 part by mass to 20 parts by mass, more preferably from 0.1 part by mass to 15 parts by mass, per 100 parts by mass of the [A] polymer. The lithographic performance of the radiation sensitive resin composition is further improved by setting the content to the above range.

〈感放射線性樹脂組成物之調製方法〉 <Modulation method of radiation sensitive resin composition>

該感放射線性樹脂組成物可藉由以特定之比例混合[A]聚合物、[B]酸產生劑、[C]溶劑及視需要之[D]其他酸產生劑等各任意成分而調製。 The radiation sensitive resin composition can be prepared by mixing each component such as [A] polymer, [B] acid generator, [C] solvent, and optionally [D] other acid generator in a specific ratio.

該感放射線性樹脂組成物之固體成分濃度較好為0.1質量%~50質量%,更好為0.5質量%~30質量%,又更好為1質量%~10質量%。 The solid content concentration of the radiation sensitive resin composition is preferably from 0.1% by mass to 50% by mass, more preferably from 0.5% by mass to 30% by mass, even more preferably from 1% by mass to 10% by mass.

〈抗蝕圖型之形成方法〉 <Formation method of resist pattern>

該抗蝕圖型之形成方法具有下列步驟:使用該感放射線性樹脂組成物,形成抗蝕膜之步驟(以下亦稱為「抗蝕膜形成步驟」),使上述抗蝕膜曝光之步驟(以下亦稱為「曝光步驟」),及使上述經曝光之抗蝕膜顯像之步驟(以下亦稱為「顯像步驟」)。 The method for forming a resist pattern has the steps of: forming a resist film using the radiation-sensitive resin composition (hereinafter also referred to as "resist film forming step"), and exposing the resist film ( Hereinafter, it is also referred to as "exposure step"), and a step of developing the exposed resist film (hereinafter also referred to as "development step").

以下,針對各步驟加以說明。 Hereinafter, each step will be described.

[抗蝕膜形成步驟] [Resist film forming step]

本步驟係使用上述本發明之感放射線性樹脂組成物形成抗蝕膜。塗佈方法並無特別限制,但可採用例如旋轉塗佈、澆鑄塗佈、輥塗佈等適當之塗佈手段。至於基板列舉為例如矽晶圓、以鋁被覆之晶圓等。具體而言,以使所得抗蝕膜成為既定厚度之方式塗佈該組成物後,視需要經預烘烤(PB),使塗膜中之溶劑揮發。塗膜之膜厚較好為 10nm~500nm。PB之溫度通常為60℃~140℃,較好為80℃~120℃。PB之時間通常為5秒~600秒,較好為10秒~300秒。 In this step, a resist film is formed using the above-described radiation sensitive resin composition of the present invention. The coating method is not particularly limited, and suitable coating means such as spin coating, casting coating, roll coating, or the like can be employed. The substrate is exemplified by, for example, a germanium wafer, a wafer coated with aluminum, or the like. Specifically, after the composition is applied such that the obtained resist film has a predetermined thickness, it is pre-baked (PB) as needed to volatilize the solvent in the coating film. The film thickness of the coating film is preferably 10nm~500nm. The temperature of PB is usually from 60 ° C to 140 ° C, preferably from 80 ° C to 120 ° C. The time of PB is usually 5 seconds to 600 seconds, preferably 10 seconds to 300 seconds.

[曝光步驟] [Exposure step]

本步驟係使上述抗蝕膜形成步驟中形成之抗蝕膜曝光。該曝光係視情況介隔水等液浸介質,透過具有特定圖型之遮罩照射放射線而進行。上述放射線係依據成為目的之圖型之線寬,由例如可見光線、紫外線、遠紫外線、EUV(波長13.5nm)、X射線、γ射線等電磁波;電子束、α射線等帶電粒子束等適當選擇。該等中,該感放射線性樹脂組成物之[A]聚合物具有構造單位(I-1)之情況等,以遠紫外線較佳,更好為ArF準分子雷射光(波長193nm)、KrF準分子雷射光(波長248nm),又更好為ArF準分子雷射光。又,該感放射線性樹脂組成物之[A]聚合物具有構造單位(I-2)之情況等,以電子束、EUV較佳。 This step exposes the resist film formed in the above-described resist film forming step. This exposure is performed by interposing radiation through a mask having a specific pattern depending on the liquid immersion medium such as water. The radiation is based on the line width of the target pattern, and is appropriately selected from, for example, visible light, ultraviolet light, far ultraviolet light, EUV (wavelength 13.5 nm), electromagnetic waves such as X-rays and gamma rays, and charged particle beams such as electron beams and alpha rays. . In the above, the [A] polymer of the radiation-sensitive resin composition has a structural unit (I-1), etc., and is preferably far ultraviolet rays, more preferably ArF excimer laser light (wavelength 193 nm), KrF excimer. Laser light (wavelength 248 nm), and better ArF excimer laser light. Further, the [A] polymer of the radiation sensitive resin composition has a structural unit (I-2), and the like, and is preferably an electron beam or EUV.

又,曝光後較好進行曝光後烘烤(PEB)。藉由進行PEB,可使該抗蝕膜之經曝光部位中之酸解離性基之解離反應順利進行。PEB之溫度通常為50℃~180℃,較好為80℃~130℃。PEB時間通常為5秒~600秒,較好為10秒~300秒。 Further, after exposure, post-exposure baking (PEB) is preferably performed. By performing PEB, the dissociation reaction of the acid dissociable group in the exposed portion of the resist film can be smoothly performed. The temperature of the PEB is usually from 50 ° C to 180 ° C, preferably from 80 ° C to 130 ° C. The PEB time is usually 5 seconds to 600 seconds, preferably 10 seconds to 300 seconds.

本發明中,為了以最大限度引出感放射線性樹脂組成物之潛在能力,亦可例如於使用之基板上預先形 成有機系或無機系之抗反射膜。又,為了防止環境中所含鹼性雜質等之影響,亦可例如於塗膜上設置保護膜。且,進行液浸曝光時,為避免液浸介質與抗蝕膜直接接觸,亦可例如於抗蝕膜上設置液浸用保護膜。 In the present invention, in order to maximize the potential of the radiation-sensitive resin composition, it is also possible to pre-form, for example, on a substrate to be used. An organic or inorganic antireflective film. Further, in order to prevent the influence of alkaline impurities and the like contained in the environment, for example, a protective film may be provided on the coating film. Further, in the case of performing immersion exposure, in order to prevent the liquid immersion medium from coming into direct contact with the resist film, for example, a protective film for liquid immersion may be provided on the resist film.

[顯像步驟] [development step]

本步驟係使上述曝光步驟中曝光之抗蝕膜顯像。該顯像所用之顯像液列舉為例如鹼顯像液、有機溶劑顯像液等。藉此,形成特定之抗蝕圖型。 This step develops the resist film exposed in the above exposure step. The developing solution used for the development is exemplified by an alkali developing solution, an organic solvent developing solution, and the like. Thereby, a specific resist pattern is formed.

上述鹼顯像液列舉為例如使氫氧化鈉、氫氧化鉀、碳酸鈉、矽酸鈉、偏矽酸鈉、氨水、乙基胺、正丙基胺、二乙基胺、二正丙基胺、三乙胺、甲基二乙基胺、乙基二甲基胺、三乙醇胺、氫氧化四甲基銨(TMAH)、吡咯、哌啶、膽鹼、1,8-二氮雜雙環-[5.4.0]-7-十一碳烯、1,5-二氮雜雙環-[4.3.0]-5-壬烯等鹼性化合物之至少一種溶解而成之鹼性水溶液。 The above alkali developing solution is exemplified by, for example, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium citrate, sodium metasilicate, aqueous ammonia, ethylamine, n-propylamine, diethylamine, di-n-propylamine. , triethylamine, methyldiethylamine, ethyldimethylamine, triethanolamine, tetramethylammonium hydroxide (TMAH), pyrrole, piperidine, choline, 1,8-diazabicyclo-[ 5.4.0] An alkaline aqueous solution obtained by dissolving at least one of a basic compound such as 7-undecene or 1,5-diazabicyclo-[4.3.0]-5-decene.

上述有機溶劑顯像液列舉為例如:醇系溶劑為甲醇、乙醇、正丙醇、異丙醇、正丁醇、異丁醇、第二丁醇等;醚系溶劑為二乙基醚、二丙基醚、二丁基醚、四氫呋喃、二噁烷、二苯基醚、苯甲醚等;酮矽溶劑為丙酮、甲基乙基酮、甲基正丙基酮、甲基正丁基酮等;醯胺系溶劑為N,N’-二甲基咪唑啶酮、N-甲基甲醯 胺、N,N-二甲基甲醯胺等;酯系溶劑為碳酸二乙酯、乙酸甲酯、乙酸乙酯、乙酸正丙酯、乙酸異丙酯、乙酸正丁酯等。 The organic solvent developing solution is exemplified by, for example, an alcohol solvent such as methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol or second butanol; and the ether solvent is diethyl ether and Propyl ether, dibutyl ether, tetrahydrofuran, dioxane, diphenyl ether, anisole, etc.; the ketone oxime solvent is acetone, methyl ethyl ketone, methyl n-propyl ketone, methyl n-butyl ketone Ethamamine solvent N, N'-dimethylimidazolidinone, N-methylformamidine An amine, N,N-dimethylformamide or the like; the ester solvent is diethyl carbonate, methyl acetate, ethyl acetate, n-propyl acetate, isopropyl acetate or n-butyl acetate.

該等顯像液可單獨使用或組合2種以上使用。又,顯像後一般係以水等洗淨、並經乾燥。 These developing solutions may be used singly or in combination of two or more. Further, after development, it is generally washed with water or the like and dried.

〈感放射線性酸產生劑〉 <Sense Radiation Acid Generator>

本發明之感放射線性酸產生劑係由以上述式(1)表示之化合物所成。該感放射線性樹脂組成物由於具有上述特性,故可提高感放射線性樹脂組成物之LWR性能等。 The radiation-sensitive acid generator of the present invention is a compound represented by the above formula (1). Since the radiation sensitive resin composition has the above characteristics, the LWR performance and the like of the radiation sensitive resin composition can be improved.

〈化合物〉 Compound

本發明之化合物為以上述式(1)表示之化合物。該化合物由於具有上述構造,故可較好地使用作為構成該感放射線性酸產生劑之化合物。 The compound of the present invention is a compound represented by the above formula (1). Since the compound has the above structure, it can be preferably used as a compound constituting the radiation-sensitive acid generator.

〈化合物之製造方法〉 <Method of Manufacturing Compounds>

本發明之化合物之製造方法為具有下列步驟之以下述式(1)表示之化合物之製造方法:(A)使以下述式(i-a)表示之有機鹵化物與以E2SO3表示之亞硫酸鹽反應,獲得以下述式(i-b)表示之磺酸鹽之步驟,及(B)使上述磺酸鹽予以MY表示之鎓鹽反應之步驟。 The method for producing the compound of the present invention is a method for producing a compound represented by the following formula (1): (A) an organic halide represented by the following formula (ia) and a sulfurous acid represented by E 2 SO 3 The salt is reacted to obtain a sulfonate represented by the following formula (ib), and (B) a step of reacting the above sulfonate with an onium salt represented by MY.

依據該化合物之製造方法,可簡易且收率佳地製造該化合物。 According to the method for producing the compound, the compound can be produced easily and in good yield.

關於該感放射線性酸產生劑、該化合物及該化合物之製造方法,已在上述之感放射係性樹脂組成物之[B]酸產生劑項中說明。 The radiation-sensitive acid generator, the compound, and the method for producing the compound are described in the [B] acid generator of the above-described radiation-sensitive resin composition.

[實施例] [Examples]

以下基於實施例具體說明本發明,但本發明並不受該等實施例之限制。各種物性值之測定方法示於下。 The present invention is specifically described below based on examples, but the present invention is not limited by the examples. The measurement methods of various physical property values are shown below.

[重量平均分子量(Mw)、數平均分子量(Mn)及分散度(Mw/Mn)] [Weight average molecular weight (Mw), number average molecular weight (Mn), and degree of dispersion (Mw/Mn)]

聚合物之Mw及Mn係利用凝膠滲透層析儀(GPC),使用TOSOH製造之GPC管柱(G2000HXL 2根,G3000HXL 1根,G4000HXL 1根),以下述條件測定。又,分散度(Mw/Mn)係由Mw及Mn之測定結果算出。 The Mw and Mn of the polymer were measured by a gel permeation chromatography (GPC) using a GPC column (two G2000HXL, one G3000HXL, and one G4000HXL) manufactured by TOSOH under the following conditions. Further, the degree of dispersion (Mw/Mn) was calculated from the measurement results of Mw and Mn.

溶出溶劑:四氫呋喃 Dissolution solvent: tetrahydrofuran

流量:1.0mL/分鐘 Flow rate: 1.0mL/min

試料濃度:1.0質量% Sample concentration: 1.0% by mass

試料注入量:100μL Sample injection amount: 100 μL

管柱溫度:40℃ Column temperature: 40 ° C

檢測器:示差折射計 Detector: differential refractometer

標準物質:單分散聚苯乙烯 Reference material: monodisperse polystyrene

[低分子量部分之含量] [Content of low molecular weight fraction]

[A]聚合物中之低分子量成分(分子量未達1,000之成分)之含量(質量%)係以高速液體層析儀(HPLC),使用JL Science製之HPLC管柱(Intersil ODS-25μm,4.6mm×250mm),以下述條件測定。 [A] The content (% by mass) of the low molecular weight component (component having a molecular weight of less than 1,000) in the polymer is a high-speed liquid chromatograph (HPLC) using an HPLC column (Intersil ODS-25 μm, 4.6) manufactured by JL Science. Mm ×250 mm), measured under the following conditions.

溶出溶劑:丙烯腈/0.1質量%磷酸水溶液 Dissolution solvent: acrylonitrile / 0.1% by mass phosphoric acid aqueous solution

流量:1.0mL/分鐘 Flow rate: 1.0mL/min

試料濃度:1.0質量% Sample concentration: 1.0% by mass

試料注入量:100μL Sample injection amount: 100 μL

檢測器:示差折射計 Detector: differential refractometer

[13C-NMR分析] [ 13 C-NMR analysis]

用於求得聚合物各構成單位含有之比例之13C-NMR分析係使用核磁共振裝置(JNM-ECX400,日本電子製)測定。 The 13 C-NMR analysis for determining the ratio of each constituent unit of the polymer was measured using a nuclear magnetic resonance apparatus (JNM-ECX400, manufactured by JEOL Ltd.).

〈化合物(I)之合成〉 <Synthesis of Compound (I)>

化合物(I)係以以下之反應流程圖所示之方法進行合成。 The compound (I) was synthesized by the method shown in the following reaction scheme.

上述反應流程圖中,G為金剛烷-1-基、金剛烷-1-基甲基、金剛烷-2-基、N-氮雜環己基、3,5-二甲基金剛烷-1-基、5-氧代-4-氧雜三環[4.3.1.13,8]十一烷基、4-氧代金剛烷-1-基、3-羥基金剛烷-1-基或3-(2,2-二甲基-1,3-二氧基環戊烷-5-基)-7,7-二甲基-4,6,8-三氧基雙環[3.3.0]辛烷-2-基。L為單鍵、-COO-*、-O-、-S-、-CONH-或-SO2O-。*表示與G之鍵結部位。R1為單鍵、1,4-丁烷二基、1,3-丙烷二基或1,2-乙烷二基。 In the above reaction scheme, G is adamantane-1-yl, adamantyl-1-ylmethyl, adamantane-2-yl, N-azetidinyl, 3,5-dimethyladamantane-1- , 5-oxo-4-oxatricyclo[4.3.1.1 3,8 ]undecyl, 4-oxoadamantan-1-yl, 3-hydroxyadamantan-1-yl or 3-( 2,2-Dimethyl-1,3-dioxycyclopentane-5-yl)-7,7-dimethyl-4,6,8-trioxybicyclo[3.3.0]octane- 2-based. L is a single bond, -COO-*, -O-, -S-, -CONH- or -SO 2 O-. * indicates the bonding site with G. R 1 is a single bond, a 1,4-butanediyl group, a 1,3-propanediyl group or a 1,2-ethanediyl group.

[實施例1] [Example 1]

於100mL之梨形燒瓶中饋入5-溴戊酸金剛烷-1-基酯2.0g(6.3mmol)、甲醇50mL及水30mL後,以固體添加亞硫酸鈉2.0g(15.9mmol),經分散成白濁。在85℃加熱攪拌10小時後,添加乙醇100mL後,藉過濾去除不溶物。餾除溶劑後,添加氯化三苯基鋶1.52g(5.1mmol)、二氯甲烷40mL及水30mL後,於室溫攪拌6小時。以二氯甲烷萃取有機物後,以水洗淨5次。以無水硫酸鈉乾燥 後,餾除溶劑,以管柱層析法純化,獲得2.30g(收率78%)無色固體之以下述式(S-1)表示之化合物。 After feeding 2.0 g (6.3 mmol) of adamantyl 5-bromopentanoate, 50 mL of methanol and 30 mL of water in a 100 mL pear-shaped flask, 2.0 g (15.9 mmol) of sodium sulfite was added as a solid, and it was dispersed into a white turbidity. . After heating and stirring at 85 ° C for 10 hours, 100 mL of ethanol was added, and then the insoluble matter was removed by filtration. After distilling off the solvent, 1.52 g (5.1 mmol) of triphenylphosphonium chloride, 40 mL of dichloromethane and 30 mL of water were added, and the mixture was stirred at room temperature for 6 hours. The organic matter was extracted with dichloromethane and washed with water 5 times. Dry with anhydrous sodium sulfate Then, the solvent was distilled off and purified by column chromatography to obtain 2.30 g (yield: 78%) of the compound of the formula (S-1).

[實施例2~17] [Examples 2 to 17]

實施例1中,除使用其他衍生物替代5-溴戊酸金剛烷-1-基酯作為起始物質以外,與實施例1同樣,合成以下述式(S-2)~(S-17)表示之化合物。 In the same manner as in Example 1, except that other derivatives were used instead of adamantyl-1-bromopentanoate as a starting material, the following formulas (S-2) to (S-17) were synthesized. Expressed as a compound.

〈聚合物之合成〉 <Synthesis of Polymers>

[A]聚合物、[F]含氟原子之聚合物之合成中所用之各單體(以下亦稱為「化合物(M1-)~(M-6)」)示於下述。 Each monomer used in the synthesis of the polymer of [A] polymer and [F] fluorine atom (hereinafter also referred to as "compound (M1-) to (M-6)") is shown below.

[[A]聚合物之合成] [[A] Synthesis of Polymers] [合成例1] [Synthesis Example 1]

將上述化合物(M-1)9.01g(50莫耳%)及化合物(M-2)10.99g(50莫耳%)溶解於2-丁酮40g中,接著,使作為自由基聚合起始劑之AIBN 0.81g(相對於上述化合物之合計莫耳數為5莫耳%)溶解,調製單體溶液。以氮氣吹拂注入有20g 2-丁酮之100mL三頸燒瓶30分鐘後,邊攪拌邊加熱至80℃,以滴加漏斗於3小時內滴加上述調製之單體溶液。以滴加開始作為聚合反應之開始時間,進行聚合反應6小時。聚合反應結束後,以水冷使聚合反應液冷卻至30℃以下。將冷卻之聚合反應液投入400g甲醇中,過濾所析出之白色粉末。以80g甲醇洗淨 過濾之白色粉末2次後,經過濾,於50℃乾燥17小時,合成白色粉末狀之聚合物(A-1)(15.6g,收率78%)。聚合物(A-1)之Mw為7,200,Mw/Mn為1.52。13C-NMR分析之結果,源自化合物(M-1)及化合物(M-2)之構造單位之含有比例分別為50.2莫耳%及49.8莫耳%。該聚合物(A-1)中之低分子量部分之含量為0.04質量%。 9.01 g (50 mol%) of the above compound (M-1) and 10.99 g (50 mol%) of the compound (M-2) were dissolved in 40 g of 2-butanone, followed by use as a radical polymerization initiator The AIBN 0.81 g (5 mol% based on the total number of the above compounds) was dissolved to prepare a monomer solution. After injecting 20 g of 2-butanone into a 100 mL three-necked flask under nitrogen for 30 minutes, the mixture was heated to 80 ° C with stirring, and the above-prepared monomer solution was added dropwise over 3 hours with a dropping funnel. The polymerization reaction was carried out for 6 hours starting from the start of the dropwise addition as the start time of the polymerization reaction. After completion of the polymerization reaction, the polymerization reaction liquid was cooled to 30 ° C or lower by water cooling. The cooled polymerization reaction liquid was poured into 400 g of methanol, and the precipitated white powder was filtered. The filtered white powder was washed twice with 80 g of methanol, and then filtered and dried at 50 ° C for 17 hours to obtain a white powdery polymer (A-1) (15.6 g, yield 78%). The polymer (A-1) had a Mw of 7,200 and an Mw/Mn of 1.52. As a result of 13 C-NMR analysis, the content ratios of the structural units derived from the compound (M-1) and the compound (M-2) were 50.2 mol% and 49.8 mol%, respectively. The content of the low molecular weight portion in the polymer (A-1) was 0.04% by mass.

[合成例2] [Synthesis Example 2]

將化合物(M-1)9.53g(50莫耳%)、化合物(M-2)9.29g(40莫耳%)及化合物(M-3)1.18g(10莫耳%)溶解於2-丁酮40g中,接著,使作為自由基聚合起始劑之AIBN 0.86g(5莫耳%)溶解,調製單體溶液。以氮氣吹拂注入有20g 2-丁酮之100mL三頸燒瓶30分鐘後,邊攪拌邊加熱至80℃,以滴加漏斗於3小時內滴加上述調製之單體溶液。以滴加開始作為聚合反應之開始時間,進行聚合反應6小時。聚合反應結束後,以水冷使聚合反應液冷卻至30℃以下。將冷卻之聚合反應液投入400g甲醇中,過濾所析出之白色粉末。以80g甲醇洗淨過濾之白色粉末2次後,經過濾,於50℃乾燥17小時,合成白色粉末狀之聚合物(A-2)(14.1g,收率71%)。聚合物(A-2)之Mw為7,100,Mw/Mn為1.53。又,13C-NMR分析之結果,源自化合物(M-1)、(M-2)及(M-3)之構造單位之含有比例分別為50.1莫耳%、40.6莫耳%及9.3莫 耳%。該聚合物(A-2)中之低分子量部分之含量為0.06質量%。 Compound (M-1) 9.53 g (50 mol%), compound (M-2) 9.29 g (40 mol%) and compound (M-3) 1.18 g (10 mol%) were dissolved in 2-butyl In 40 g of the ketone, 0.86 g (5 mol%) of AIBN as a radical polymerization initiator was dissolved to prepare a monomer solution. After injecting 20 g of 2-butanone into a 100 mL three-necked flask under nitrogen for 30 minutes, the mixture was heated to 80 ° C with stirring, and the above-prepared monomer solution was added dropwise over 3 hours with a dropping funnel. The polymerization reaction was carried out for 6 hours starting from the start of the dropwise addition as the start time of the polymerization reaction. After completion of the polymerization reaction, the polymerization reaction liquid was cooled to 30 ° C or lower by water cooling. The cooled polymerization reaction liquid was poured into 400 g of methanol, and the precipitated white powder was filtered. After the filtered white powder was washed twice with 80 g of methanol, it was filtered and dried at 50 ° C for 17 hours to synthesize a white powdery polymer (A-2) (14.1 g, yield 71%). The polymer (A-2) had a Mw of 7,100 and an Mw/Mn of 1.53. Further, as a result of 13 C-NMR analysis, the content ratios of the structural units derived from the compounds (M-1), (M-2), and (M-3) were 50.1 mol%, 40.6 mol%, and 9.3 mol, respectively. ear%. The content of the low molecular weight portion in the polymer (A-2) was 0.06% by mass.

[合成例3] [Synthesis Example 3]

將化合物(M-4)55.0g及化合物(M-5)45.0g、作為自由基聚合起始劑之AIBN 4g及作為鏈轉移劑之第三-十二烷基硫醇1g溶解於丙二醇單甲基醚100g中後,在氮氣環境下,使反應溫度保持在70℃,聚合16小時。聚合後,將聚合反應液滴加於1,000g之正己烷中,使聚合物凝固純化。接著,再度將丙二醇單甲基醚150g添加於所得聚合物中後,再添加甲醇150g、三乙胺34g及水6g,邊在沸點下回流邊進行水解反應8小時。反應後,減壓餾除溶劑及三乙胺,使所得聚合物溶解於丙酮150g中後,滴加於2,000g之水中凝固,過濾生成之白色粉末,在50℃乾燥17小時,獲得白色粉末狀之聚合物(A-3)(65.7g,收率76.6%)。聚合物(A-3)之Mw為10,000,Mw/Mn為2.1。且,13C-NMR分析之結果,源自對-羥基苯乙烯之構造單位及源自化合物(M-5)之構造單位之含有比例分別為65.4莫耳%及34.6莫耳%。該聚合物(A-3)之低分子量部分之含量為0.05質量%。 55.0 g of the compound (M-4) and 45.0 g of the compound (M-5), 4 g of AIBN as a radical polymerization initiator, and 1 g of a third-dodecylmercaptan as a chain transfer agent were dissolved in propylene glycol monomethyl After 100 g of the ether, the reaction temperature was maintained at 70 ° C under a nitrogen atmosphere, and polymerization was carried out for 16 hours. After the polymerization, the polymerization reaction liquid was added to 1,000 g of n-hexane to solidify and purify the polymer. Then, 150 g of propylene glycol monomethyl ether was further added to the obtained polymer, and then 150 g of methanol, 34 g of triethylamine, and 6 g of water were further added, and hydrolysis reaction was carried out for 8 hours while refluxing at the boiling point. After the reaction, the solvent and triethylamine were distilled off under reduced pressure, and the obtained polymer was dissolved in 150 g of acetone, and then added dropwise to 2,000 g of water to be solidified, and the resulting white powder was filtered and dried at 50 ° C for 17 hours to obtain a white powder. Polymer (A-3) (65.7 g, yield 76.6%). The polymer (A-3) had Mw of 10,000 and Mw/Mn of 2.1. Further, as a result of 13 C-NMR analysis, the content ratios of the structural unit derived from p-hydroxystyrene and the structural unit derived from the compound (M-5) were 65.4 mol% and 34.6 mol%, respectively. The content of the low molecular weight portion of the polymer (A-3) was 0.05% by mass.

[F]含氟原子之聚合物之合成] [F] Synthesis of a fluorine atom-containing polymer] [合成例4] [Synthesis Example 4]

將化合物(M-1)79.9g(70莫耳%)及化合物(M- 6)20.91g(30莫耳%)溶解於100g之2-丁酮中,接著使作為自由基聚合起始劑之2,2’-偶氮雙異丁酸二甲酯4.77g溶解,調製單體溶液。以氮氣吹拂注入有100g 2-丁酮之1,000mL三頸燒瓶30分鐘後,邊攪拌邊加熱至80℃,以滴加漏斗於3小時內滴加上述調製之單體溶液。以滴加開始作為聚合反應之開始時間,進行聚合反應6小時。聚合反應結束後,以水冷使聚合反應液冷卻至30℃以下。將反應溶液移液至2L之分液漏斗中後,以150g之正己烷均勻稀釋該聚合反應液,投入600g甲醇並混合。接著,投入30g蒸餾水,再攪拌且靜置30分鐘。隨後,回收下層,藉由進行溶劑置換,獲得聚合物(F-1)之丙二醇單甲基醚乙酸酯溶液(收率60%)。所得聚合物(F-1)之Mw為7,200,Mw/Mn為2.00。且,13C-NMR分析之結果,聚合物(F-1)中之源自化合物(M-1)及(M-6)之構造單位之含有比率分別為71.1莫耳%及28.9莫耳%。聚合物(F-1)之低分子量部分含量為0.07質量%。 79.9 g (70 mol%) of the compound (M-1) and 20.91 g (30 mol%) of the compound (M-6) were dissolved in 100 g of 2-butanone, followed by use as a radical polymerization initiator. 2.77 g of 2,2'-azobisisobutyric acid dimethyl ester was dissolved to prepare a monomer solution. The 1,000-mL three-necked flask in which 100 g of 2-butanone was injected was blown with nitrogen for 30 minutes, and then heated to 80 ° C with stirring, and the above-prepared monomer solution was added dropwise over 3 hours with a dropping funnel. The polymerization reaction was carried out for 6 hours starting from the start of the dropwise addition as the start time of the polymerization reaction. After completion of the polymerization reaction, the polymerization reaction liquid was cooled to 30 ° C or lower by water cooling. After the reaction solution was pipetted into a 2 L separatory funnel, the polymerization reaction solution was uniformly diluted with 150 g of n-hexane, and 600 g of methanol was added thereto and mixed. Next, 30 g of distilled water was charged, and the mixture was further stirred and allowed to stand for 30 minutes. Subsequently, the lower layer was recovered, and by solvent displacement, a propylene glycol monomethyl ether acetate solution of the polymer (F-1) was obtained (yield 60%). The obtained polymer (F-1) had Mw of 7,200 and Mw/Mn of 2.00. Further, as a result of 13 C-NMR analysis, the content ratios of the structural units derived from the compounds (M-1) and (M-6) in the polymer (F-1) were 71.1 mol% and 28.9 mol%, respectively. . The content of the low molecular weight portion of the polymer (F-1) was 0.07% by mass.

〈感放射線性樹脂組成物之調製〉 <Modulation of Radiation-Linear Resin Composition>

感放射線性樹脂組成物之調製所用之各成分示於下述。 The components used for the preparation of the radiation sensitive resin composition are shown below.

[[B]成分] [[B] ingredients]

實施例中使用上述合成之化合物(S-1)~(S-17)。 The compounds (S-1) to (S-17) synthesized above were used in the examples.

比較例中使用下述化合物(CS-1)~(CS-4)。 The following compounds (CS-1) to (CS-4) were used in the comparative examples.

CS-1:三苯基鋶 10-樟腦磺酸鹽(以下述式(CS-1)表示之化合物) CS-1: triphenylsulfonium 10-camphorsulfonate (compound represented by the following formula (CS-1))

CS-2:三苯基鋶環己烷磺酸鹽(以下述式(CS-2)表示之化合物) CS-2: triphenylsulfonium cyclohexanesulfonate (compound represented by the following formula (CS-2))

CS-3:三苯基鋶丁烷-1-磺酸鹽(以下述式(CS-3)表示之化合物) CS-3: triphenylbutane-1-sulfonate (compound represented by the following formula (CS-3))

CS-4:三苯基鋶 4-(正丙基羰基氧基)-1-氟丁烷-1-磺酸鹽(以下述式(CS-4)表示之化合物)。 CS-4: triphenylsulfonium 4-(n-propylcarbonyloxy)-1-fluorobutane-1-sulfonate (compound represented by the following formula (CS-4)).

[[C]溶劑] [[C]solvent]

C-1:乙酸丙二醇單甲基醚 C-1: propylene glycol monomethyl ether acetate

C-2:環己酮 C-2: cyclohexanone

[[D]其他酸產生劑] [[D]Other acid generators]

D-1:三苯基鋶 2-(金剛烷-1-基羰基氧基)-1,1,2,2-四氟丁烷-1-磺酸鹽(以下述式(D-1)表示之化合物) D-1: triphenylsulfonium 2-(adamantan-1-ylcarbonyloxy)-1,1,2,2-tetrafluorobutane-1-sulfonate (represented by the following formula (D-1)) Compound)

[[E]含氮原子之化合物] [[E] compounds containing nitrogen atoms]

E-1:N-第三丁氧基羰基-4-羥基哌啶(以下述式(E-1)表示之化合物) E-1: N-t-butoxycarbonyl-4-hydroxypiperidine (compound represented by the following formula (E-1))

[[G]偏在化促進劑] [[G] partialization accelerator]

G-1:γ-丁內酯 G-1: γ-butyrolactone

[ArF曝光用感放射線性樹脂組成物之調製] [Modulation of Radiation-Resistant Resin Composition for ArF Exposure] [實施例18] [Embodiment 18]

混合作為[A]聚合物之(A-1)100質量份、作為[B]酸產生劑之(S-1)30莫耳%(相對於[D]其他酸產生劑100莫耳%之莫耳比)、作為[C]溶劑之(C-1)2,240質量份及 (C-2)960質量份、作為[D]其他酸產生劑之(D-1)8.5質量份、作為[F]含氟原子之聚合物之(F-1)3質量份以及作為[G]偏在化促進劑之(G-1)30質量份,調製感放射線性樹脂組成物(J-1)。 100 parts by mass of (A-1) as the [A] polymer and (S-1) 30 mol% as the [B] acid generator (100 mol% relative to [D] other acid generators Ear ratio), (C-1) 2, 240 parts by mass of [C] solvent and (C-2) 960 parts by mass, (D-1) 8.5 parts by mass of [D] other acid generator, (F-1) 3 parts by mass of [F] fluorine atom-containing polymer, and as [G] 30 parts by mass of (G-1) of the partialization accelerator, and the radiation sensitive resin composition (J-1) was prepared.

[實施例19~34及比較例1~5] [Examples 19 to 34 and Comparative Examples 1 to 5]

除使用下述表1所示之種類及含量之各成分以外,餘與實施例18同樣,調製感放射線性樹脂組成物(J-2)~(J-17)。 The radiation sensitive linear resin compositions (J-2) to (J-17) were prepared in the same manner as in Example 18 except that the components of the types and contents shown in the following Table 1 were used.

〈抗蝕圖型之形成〉 <Formation of resist pattern> (鹼顯像之情況) (in the case of alkali imaging)

使用旋轉塗佈器(CLEAN TRACK ACT12,東京電子製),將下層抗反射膜形成用組成物(ARC66,Brewer Science製)塗佈於12吋矽晶圓表面後,在205℃加熱60秒,形成膜厚105nm之下層抗反射膜。使用上述旋轉塗佈器將各實施例及比較例之感放射線性樹脂組成物塗佈於該下層抗反射膜上,在90℃進行PB 60秒。隨後在23℃冷卻30秒,形成膜厚90nm之抗蝕膜。接著,使用ArF準分子雷射液浸曝光裝置(NSR-S610C,NIKON製),以NA=1.3,偶極(σ 0.977/0.782)之光學條件,介隔40nm之線與間隔(1L1S)遮罩圖型使該抗蝕膜曝光。曝光後,在90℃進行PEB 60秒。隨後,以2.38質量%之TMAH水溶液顯像,以水洗淨,並乾燥,形成正型抗蝕圖型。 The composition for forming an underlying antireflective film (ARC66, manufactured by Brewer Science) was applied onto the surface of a 12-inch wafer using a spin coater (CLEAN TRACK ACT12, manufactured by Tokyo Electronics Co., Ltd.), and then heated at 205 ° C for 60 seconds to form a film. An anti-reflection film with a film thickness of 105 nm. The radiation sensitive resin composition of each of the examples and the comparative examples was applied onto the lower antireflection film using the above spin coater, and PB was carried out at 90 ° C for 60 seconds. Subsequently, it was cooled at 23 ° C for 30 seconds to form a resist film having a film thickness of 90 nm. Next, using an ArF excimer laser immersion exposure apparatus (NSR-S610C, manufactured by NIKON), with a line condition of NA=1.3, dipole (σ 0.977/0.782), a line and a spacer (1L1S) masked at 40 nm. The pattern exposes the resist film. After exposure, PEB was carried out at 90 ° C for 60 seconds. Subsequently, it was developed with a 2.38 mass% aqueous TMAH solution, washed with water, and dried to form a positive resist pattern.

〈評價〉 <Evaluation>

藉由形成之各抗蝕圖型之測定,進行各感放射線性樹脂組成物之評價。結果示於表2。又,以該方法形成之抗蝕圖型之測量係使用掃描型電子顯微鏡(S-9380,日立高科技製)。針對LWR性能及解像性,作為成為比較對象之比較例,針對實施例27~34為比較例1,針對實施例23及24為比較例2,且針對實施例22為比較例3,針對實 施例18~21及25與26為比較例4。又,表2中之「-」係表示比較對象。 The evaluation of each of the radiation sensitive resin compositions was carried out by measurement of each of the formed resist patterns. The results are shown in Table 2. Further, the measurement of the resist pattern formed by this method was carried out using a scanning electron microscope (S-9380, manufactured by Hitachi High-Technologies). For the LWR performance and the resolution, as a comparative example to be compared, Examples 27 to 34 are Comparative Example 1, Examples 23 and 24 are Comparative Example 2, and Example 22 is Comparative Example 3, and Examples 18 to 21 and 25 and 26 are Comparative Example 4. Further, "-" in Table 2 indicates a comparison object.

[LWR性能] [LWR performance]

使用上述掃描型電子顯微鏡,自圖型上部觀察抗蝕圖型,於任意點測定合計50點之線寬,由其測定值之分佈求得3σ值。以此作為LWR性能。該值愈小則表示LWR性能(nm)愈良好。此時,與比較例比較時,見到10%以上之LWR性能提升(意指LWR性能之數值成為0.9倍以下)者可評價為「良好」,未達10%之LWR性能提升者評價為「不良」。 Using the scanning electron microscope, the resist pattern was observed from the upper portion of the pattern, and the line width of 50 points was measured at any point, and the value of the measured value was obtained to obtain a value of 3σ. Use this as LWR performance. The smaller the value, the better the LWR performance (nm). At this time, when compared with the comparative example, the LWR performance improvement of 10% or more (meaning that the value of the LWR performance is 0.9 times or less) can be evaluated as "good", and the LWR performance improvement of less than 10% is evaluated as " bad".

[解像性] [resolution]

以上述最適曝光量中解像之最小抗蝕圖型之尺寸作為解像性。該值愈小顯示解像性(nm)愈良好。此時,比較與比較例之解像性時,見到10%以上之解像性提升(意指解像性之數值成為0.9倍以下)者可評價為「良好」,未達10%之解像性提升者可評價為「不良」。 The size of the minimum resist pattern that is resolved in the above optimum exposure amount is taken as the resolution. The smaller the value, the better the resolution (nm). In this case, when the resolution of the comparative example is compared, when the resolution improvement of 10% or more is seen (meaning that the value of the resolution is 0.9 times or less), it can be evaluated as "good", and the solution is less than 10%. A person who is like an ascending person can be evaluated as "bad."

[剖面形狀之矩形性] [Rectangularity of section shape]

觀察於上述最適曝光量中解像之抗蝕圖型之剖面形狀,測定抗蝕圖型之中間線寬Lb,膜之上部之線寬La,算出(La-Lb)/Lb之值,以此作為剖面形狀之矩形性之指標。剖面形狀之矩形性在(La-Lb)/Lb之值愈接近1 表示愈良好。剖面形狀之矩形性為0.9≦(La-Lb)/Lb≦1.1之範圍時可評價為「良好」,在範圍外時可評價為「不良」。 Observing the cross-sectional shape of the resist pattern in which the above-mentioned optimum exposure amount is resolved, measuring the intermediate line width Lb of the resist pattern, the line width La of the upper portion of the film, and calculating the value of (La-Lb)/Lb. As an indicator of the squareness of the cross-sectional shape. The rectangular shape of the cross-sectional shape is closer to 1 at the value of (La-Lb)/Lb The better the expression. When the squareness of the cross-sectional shape is 0.9 ≦ (La-Lb) / Lb ≦ 1.1, it can be evaluated as "good", and when it is outside the range, it can be evaluated as "poor".

[焦點深度] [Focus of depth]

觀察於上述最適曝光量解像之抗蝕圖型中於深度方向焦點變化時之尺寸,以無橋接或殘渣之狀態圖型尺寸進入到基準之90%~110%之深度方向之餘裕度作為焦點深度。該值愈大則表示焦點深度(nm)愈良好。焦點深度與比較例比較時,見到10%以上之焦點深度提高(意指焦點深度之值成為1.1倍以上)者評價為「良好」,未達10%之LWR性能提高者評價為「不良」。 Observing the size of the resist pattern in the above-mentioned optimum exposure amount image when the focus is changed in the depth direction, and entering the margin of the depth of 90% to 110% of the reference as the focus in the state of the state without the bridge or the residue. depth. The larger the value, the better the depth of focus (nm). When the depth of focus is compared with the comparative example, the increase in the depth of focus of 10% or more (meaning that the value of the depth of focus is 1.1 times or more) is evaluated as "good", and the improvement of the LWR performance of less than 10% is evaluated as "bad". .

(有機溶劑顯像之情況) (In the case of organic solvent imaging)

如表1所示,以與實施例18~34及比較例1~5相同之組成調製各感放射線性樹脂組成物。顯像液除使用乙酸正丁酯替代2.38質量%之TMAH水溶液,且未經水洗步驟以外,餘與實施例18~34及比較例1~5同樣操作,進行抗蝕圖型之形成及評價。結果一併示於表2。 As shown in Table 1, each of the radiation sensitive resin compositions was prepared in the same composition as in Examples 18 to 34 and Comparative Examples 1 to 5. The developing solution was formed in the same manner as in Examples 18 to 34 and Comparative Examples 1 to 5 except that n-butyl acetate was used instead of 2.38 mass% of TMAH aqueous solution, and the formation and evaluation of the resist pattern were carried out. The results are shown together in Table 2.

由表2之結果可了解,本發明之感放射線性樹脂組成物在使用ArF曝光時,與鹼顯像及有機溶劑顯像時,均具有優異之LWR性能、解像性、剖面形狀之矩形性及焦點深度。 As is apparent from the results of Table 2, the radiation sensitive resin composition of the present invention has excellent LWR properties, resolution, and cross-sectional shape rectangularity when exposed to AlF and organic solvent. And the depth of focus.

[電子束曝光用感放射線性樹脂組成物之調製] [Modulation of radiation-sensitive resin composition for electron beam exposure] [實施例35] [Example 35]

混合作為[A]聚合物之(A-3)100質量份、作為[B]酸 產生劑之(S-1)20質量份、作為[C]溶劑之(C-1)4,280質量份及(C-2)1,830質量份以及作為[E]含氮原子之聚合物之(E-1)3.6質量份,調製感放射線性樹脂組成物(J-18)。 100 parts by mass of (A-3) as the [A] polymer, as [B] acid (S-1) 20 parts by mass of the generating agent, (C-1) 4,280 parts by mass as the [C] solvent, and 1,830 parts by mass of (C-2) and as the polymer of the [E] nitrogen atom (E- 1) 3.6 parts by mass of a modulating radiation-sensitive resin composition (J-18).

[實施例36~51及比較例6] [Examples 36 to 51 and Comparative Example 6]

除使用下述表3所示之種類及含量之各成分以外,餘與實施例39同樣,調製感放射線性樹脂組成物(J-19)~(J-34)及(CJ-6)。表3中之「-」係表示未使用該成分。 The radiation sensitive resin compositions (J-19) to (J-34) and (CJ-6) were prepared in the same manner as in Example 39 except that the components of the types and contents shown in Table 3 below were used. The "-" in Table 3 indicates that the component is not used.

〈抗蝕圖型之形成〉 <Formation of resist pattern>

使用旋轉塗佈器(CLEAN TRACK ACT8,東京電子製),將感放射線性樹脂組成物塗佈於8吋矽晶圓表面,在90℃進行PB 60秒。隨後在23℃冷卻30秒,形成膜厚50nm之抗蝕膜。接著,使用簡易型之電子束掃描裝置(HL800D,日立製作所製,輸出:50KeV,電流密度:5.0安培/cm2)對該抗蝕膜照射電子束。照射後,在130℃進行PEB 60秒。隨後,使用2.38質量%TMAH水溶液在23℃顯像30秒,以水洗淨、乾燥,形成正型之抗蝕圖型。針對所形成之各抗蝕圖型,與上述同樣進行評價。評價結果示於表4。針對LWR性能及解像性,作為成為比較對象之比較例,於實施例35~51為比較例6。又,表4中之「-」表示為比較對象。比較例6中之PEB係在90℃進行60秒。 The radiation sensitive resin composition was applied onto the surface of an 8-inch wafer using a spin coater (CLEAN TRACK ACT8, manufactured by Tokyo Electronics Co., Ltd.), and PB was applied at 90 ° C for 60 seconds. Subsequently, it was cooled at 23 ° C for 30 seconds to form a resist film having a film thickness of 50 nm. Next, the resist film was irradiated with an electron beam using a simple electron beam scanning device (HL800D, manufactured by Hitachi, Ltd., output: 50 KeV, current density: 5.0 amp/cm 2 ). After the irradiation, PEB was performed at 130 ° C for 60 seconds. Subsequently, it was developed using a 2.38 mass% TMAH aqueous solution at 23 ° C for 30 seconds, washed with water, and dried to form a positive resist pattern. Each of the formed resist patterns was evaluated in the same manner as described above. The evaluation results are shown in Table 4. The LWR performance and the resolution were compared with Comparative Examples in Examples 35 to 51 as comparative examples to be compared. Further, "-" in Table 4 indicates a comparison object. The PEB of Comparative Example 6 was carried out at 90 ° C for 60 seconds.

由表4之結果可了解,本發明之感放射線性樹脂組成物以電子束曝光並使用於鹼顯像時,LWR性能、解像性、剖面形狀之矩形性及焦點深度優異。 As is clear from the results of Table 4, the radiation sensitive resin composition of the present invention is excellent in LWR performance, resolution, squareness of cross-sectional shape, and depth of focus when exposed to an electron beam and used for alkali development.

[產業上之可利用性] [Industrial availability]

依據本發明之感放射線性樹脂組成物及抗蝕圖型形成方法,可一面發揮廣泛的焦點深度,一面形成LWR小、具有高的解像度、且剖面形狀之矩形性優異之抗蝕圖型。本發明之感放射線性酸產生劑可較好地使用作 為該感放射線性樹脂組成物之成分。本發明之化合物可較好地使用作為該感放射線性酸產生劑。依據本發明之化合物之製造方法,可簡易且收率佳地製造該化合物。據此,此可較好地使用於今後進行更微細化之半導體裝置中之製造製程等中。 According to the radiation-sensitive resin composition and the resist pattern forming method of the present invention, it is possible to form a resist pattern having a small LWR, a high resolution, and a high cross-sectional shape, while exhibiting a wide depth of focus. The radiation sensitive acid generator of the invention can be preferably used as It is a component of the radiation-sensitive resin composition. The compound of the present invention can be preferably used as the radiation-sensitive acid generator. According to the method for producing a compound of the present invention, the compound can be produced simply and in good yield. Accordingly, this can be preferably used in a manufacturing process or the like in a semiconductor device which is further miniaturized in the future.

Claims (12)

一種感放射線性樹脂組成物,其含有:含酸解離性基之聚合物、感放射線性酸產生劑、及溶劑,上述感放射線性酸產生劑包含以下述式(1)表示之化合物,【化1】G-L-R1-SO3 - M+ (1)(式(1)中,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種或單鍵,RA為氫原子或碳數1~20之1價烴基,*表示與G之鍵結部位,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種時,R1為鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為含碳數3~30之脂環構造之基、含碳數6~30之芳香環構造之基、含碳數3~30之雜環構造之基或含碳數2~20之-NRBRC之基,L為單鍵時,R1為單鍵或鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為碳數7~30之多環之脂環式烴基或含碳數2~20之-NRBRC之基,RB及RC各獨立為碳數1~10之烷基或碳數3~10之環 烷基,或表示該等基相互結合與該等所鍵結之氮原子一起構成之環員數3~20之環構造,M+為1價之放射線分解性鎓陽離子)。 A radiation-sensitive resin composition comprising: an acid-dissociable group-containing polymer, a radiation-sensitive acid generator, and a solvent, wherein the radiation-sensitive acid generator comprises a compound represented by the following formula (1); 1] GLR 1 -SO 3 - M + (1) (In the formula (1), L is a group consisting of -COO-*, -SO 2 O-, -CONR A -, -O-, and -S- or of at least one selected from a single bond, R A 1 ~ 20 of the monovalent hydrocarbon group is a hydrogen atom or a carbon atoms, and * represents a bonding site of G, L by -COO - *, - SO 2 O -, - CONR When at least one selected from the group consisting of A -, -O-, and -S-, R 1 is a substituted or unsubstituted carbon number of an unbonded fluorine atom adjacent to a carbon atom of SO 3 - 10 alkanediyl, G is a cyclone structure having a carbon number of 3 to 30, a carboxyl group having a carbon number of 6 to 30, a heterocyclic structure having a carbon number of 3 to 30, or a carbon number 2 to 20 - NR B R C group, when L is a single bond, R 1 is a single bond or a substituted or unsubstituted carbon number adjacent to the unbonded fluorine atom of the carbon atom of SO 3 - the 10 alkanediyl group, G is as much as 7 to 30 carbon atoms, alicyclic hydrocarbon rings or -NR 2 ~ 20 carbon atoms is of the group B R C, R B, and R C Independently, it is an alkyl group having 1 to 10 carbon atoms or a cycloalkyl group having 3 to 10 carbon atoms, or a ring structure having a ring number of 3 to 20 which is bonded to the nitrogen atoms bonded to the groups. M + is a monovalent radiation-decomposable cation cation). 如請求項1之感放射線性樹脂組成物,其中上述式(1)中之L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種,RA為氫原子或碳數1~20之1價烴基,R1為鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為含碳數3~30之脂環構造之基。 The radiation-sensitive resin composition of claim 1, wherein L in the above formula (1) is a group consisting of -COO-*, -SO 2 O-, -CONR A -, -O-, and -S- At least one selected from the group consisting of R A being a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, and R 1 being a substituted or unsubstituted carbon number 1 of an unbonded fluorine atom adjacent to a carbon atom of SO 3 - ~10 alkanediyl, G is a group having an alicyclic structure having a carbon number of 3 to 30. 如請求項1之感放射線性樹脂組成物,其中上述式(1)中之L為單鍵,R1為鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為碳數7~30之多環之脂環式烴基。 The radiation sensitive linear resin composition of claim 1, wherein L in the above formula (1) is a single bond, and R 1 is a substituted or unsubstituted one of the unbonded fluorine atoms adjacent to the carbon atom of the SO 3 - An alkanediyl group having 1 to 10 carbon atoms, and G is an alicyclic hydrocarbon group having a polycyclic number of 7 to 30 carbon atoms. 如請求項1之感放射線性樹脂組成物,其進一步含有上述感放射線性酸產生劑以外之感放射線性酸產生劑,且該感放射線性酸產生劑係由磺酸酯化合物所組成,該磺酸酯化合物中之鄰接於-SO3 -之碳原子上鍵結2個以上之氟原子。 A radiation-sensitive resin composition according to claim 1, which further comprises a radiation-sensitive acid generator other than the above-mentioned radiation-sensitive acid generator, and the radiation-sensitive acid generator is composed of a sulfonate compound, the sulfonate Two or more fluorine atoms are bonded to a carbon atom adjacent to -SO 3 - in the acid ester compound. 如請求項4之感放射線性樹脂組成物,其中上述含酸解離性基之聚合物具有以下述式(2-1)表示之構造單位, (式(2-1)中,R3為氫原子、氟原子、甲基或三氟甲基,Y1為以下述式(Y-1)表示之1價酸解離性基), (式(Y-1)中,Re1為碳數1~10之1價鏈狀烴基或碳數3~20之脂環式烴基,Re2及Re3各獨立為碳數1~10之1價鏈狀烴基或碳數3~20之1價脂環式烴基,或表示該等基相互結合與該等所鍵結之碳原子一起構成之環碳數3~20之脂環構造)。 The radiation-sensitive resin composition of claim 4, wherein the acid-dissociable group-containing polymer has a structural unit represented by the following formula (2-1); (In the formula (2-1), R 3 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group, and Y 1 is a monovalent acid dissociable group represented by the following formula (Y-1)), (In the formula (Y-1), R e1 is a monovalent chain hydrocarbon group having 1 to 10 carbon atoms or an alicyclic hydrocarbon group having 3 to 20 carbon atoms, and R e2 and R e3 are each independently 1 to 10 carbon atoms. A valence chain hydrocarbon group or a monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms, or an alicyclic structure having 3 to 20 ring carbon atoms which are bonded to the bonded carbon atoms. 如請求項1之感放射線性樹脂組成物,其中上述含酸解離性基之聚合物具有以下述式(4)表示之構造單位, (式(4)中,R6為氫原子或甲基,R7為1價之有機基,p為0~3之整數,R7為複數個時,複數個R7可彼此相同亦可不同,q為1~3之整數,但,p及q滿足p+q≦5)。 The radiation-sensitive resin composition of claim 1, wherein the acid-dissociable group-containing polymer has a structural unit represented by the following formula (4). (In the formula (4), R 6 is a hydrogen atom or a methyl group, R 7 is a monovalent organic group, p is an integer of 0 to 3, and when R 7 is plural, plural R 7 may be the same or different. , q is an integer from 1 to 3, but p and q satisfy p+q≦5). 如請求項6之感放射線性樹脂組成物,其進一步含有由含氮化合物及藉由放射線之照射產生羧酸之化合物所組成群組中選出之至少一種。 The radiation sensitive resin composition of claim 6, which further comprises at least one selected from the group consisting of a nitrogen-containing compound and a compound which generates a carboxylic acid by irradiation with radiation. 如請求項1之感放射線性樹脂組成物,其中上述式(1)中之M+為由以下述式(M-1)表示之陽離子及以下述式(M-2)表示之陽離子所組成群組中選出之至少一種, (式(M-1)中,R11、R12及R13各獨立為經取代或未經 取代之碳數1~12之直鏈狀或分支狀之烷基、經取代或未經取代之碳數6~12之芳香族烴基、-OSO2-RD或-SO2-RE,或表示該等基中之2個以上相互結合所構成之環構造,RD及RE各獨立為經取代或未經取代之碳數1~12之直鏈狀或分支狀之烷基、經取代或未經取代之碳數5~25之脂環式烴基或經取代或未經取代之碳數6~12之芳香族烴基,k、m及n各獨立為0~5之整數,R11~R13以及RD及RE分別為複數個時,複數個R11~R13及RD與RE可分別相同亦可不同,式(M-2)中,R14及R15各獨立為經取代或未經取代之碳數1~12之直鏈狀或分支狀之烷基、經取代或未經取代之碳數6~12之芳香族烴基、-OSO2-RF或-SO2-RG,或表示該等基中之2個以上相互結合而構成之環構造,RF及RG各獨立為經取代或未經取代之碳數1~12之直鏈狀或分支狀之烷基、經取代或未經取代之碳數5~25之脂環式烴基或經取代或未經取代之碳數6~12之芳香族烴基,i及j各獨立為0~5之整數,R14、R15、RF及RG分別為複數個時,複數個R14、R15、RF與RG可分別相同亦可不同)。 The radiation-sensitive resin composition of claim 1, wherein M + in the above formula (1) is a group consisting of a cation represented by the following formula (M-1) and a cation represented by the following formula (M-2) At least one selected from the group, (In the formula (M-1), R 11 , R 12 and R 13 are each independently a substituted or unsubstituted linear or branched alkyl group having 1 to 12 carbon atoms, substituted or unsubstituted. An aromatic hydrocarbon group having 6 to 12 carbon atoms, -OSO 2 -R D or -SO 2 -R E , or a ring structure composed of two or more of these groups bonded together, and R D and R E are each independently A substituted or unsubstituted linear or branched alkyl group having 1 to 12 carbon atoms, a substituted or unsubstituted alicyclic hydrocarbon group having 5 to 25 carbon atoms or a substituted or unsubstituted carbon number 6 to 12 aromatic hydrocarbon groups, k, m and n are each independently an integer of 0 to 5, and when R 11 to R 13 and R D and R E are plural, respectively, a plurality of R 11 to R 13 and R D are R E may be the same or different, and in the formula (M-2), R 14 and R 15 are each independently substituted or unsubstituted, linear or branched alkyl having 1 to 12 carbon atoms, substituted. Or an unsubstituted aromatic hydrocarbon group having 6 to 12 carbon atoms, -OSO 2 -R F or -SO 2 -R G , or a ring structure in which two or more of the groups are bonded to each other, R F and R G is independently substituted or unsubstituted, linear or branched alkyl having 1 to 12 carbon atoms, substituted Or an unsubstituted alicyclic hydrocarbon group having 5 to 25 carbon atoms or a substituted or unsubstituted aromatic hydrocarbon group having 6 to 12 carbon atoms, and i and j are each independently an integer of 0 to 5, R 14 and R 15 When R F and R G are plural, respectively, a plurality of R 14 , R 15 , R F and R G may be the same or different. 一種抗蝕圖型形成方法,其具有下述步驟:使用如請求項1之感放射線性樹脂組成物,形成抗蝕膜之步驟,使上述抗蝕膜曝光之步驟,及使上述經曝光之抗蝕膜顯像之步驟。 A resist pattern forming method having the steps of: forming a resist film by using a radiation-sensitive resin composition as claimed in claim 1, a step of exposing the resist film, and making the exposed film resistant The steps of etch imaging. 一種感放射線性酸產生劑,其係由以下述式(1) 表示之化合物所組成,【化6】G-L-R1-SO3 - M+ (1)(式(1)中,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種或單鍵,RA為氫原子或碳數1~20之1價烴基,*表示與G之鍵結部位,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種時,R1為鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為含碳數3~30之脂環構造之基、含碳數6~30之芳香環構造之基、含碳數3~30之雜環構造之基或含碳數2~20之-NRBRC之基,L為單鍵時,R1為單鍵或鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為碳數7~30之多環之脂環式烴基或含碳數2~20之-NRBRC之基,RB及RC各獨立為碳數1~10之烷基或碳數3~10之環烷基,或表示該等基相互結合與該等所鍵結之氮原子一起構成之環員數3~20之環構造,M+為1價之放射線分解性鎓陽離子)。 A radiation sensitive acid generator consisting of a compound represented by the following formula (1), GLR 1 -SO 3 - M + (1) (in the formula (1), L is -COO At least one or a single bond selected from the group consisting of -*, -SO 2 O-, -CONR A -, -O-, and -S-, and R A is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. * indicates a bonding site with G, and L is at least one selected from the group consisting of -COO-*, -SO 2 O-, -CONR A -, -O-, and -S-, and R 1 is adjacent a substituted or unsubstituted alkanediyl group having 1 to 10 carbon atoms which is not bonded to a fluorine atom at a carbon atom of SO 3 - , and a carbon group having a carbon number of 3 to 30 and having a carbon number of 6 a base of an aromatic ring structure of ~30, a group of a heterocyclic structure having a carbon number of 3 to 30 or a group of -NR B R C having a carbon number of 2 to 20, and when L is a single bond, R 1 is a single bond or adjacency a substituted or unsubstituted alkanediyl group having 1 to 10 carbon atoms which is not bonded to a fluorine atom at a carbon atom of SO 3 - , and G is an alicyclic hydrocarbon group having a carbon number of 7 to 30 or a carbon number 2 to 20 -NR B R C group, R B and R C are each independently a C 1-10 alkyl group or a C 3-10 cycloalkyl group, or indicate that the groups are bonded to each other Bonded The number of ring membered ring structure of 3 to 20 constitutes together with the atoms, M + is a monovalent cation of radiation decomposable). 一種以下述式(1)表示之化合物,【化7】G-L-R1-SO3 - M+ (1) (式(1)中,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種或單鍵,RA為氫原子或碳數1~20之1價烴基,*表示與G之鍵結部位,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種時,R1為鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為含碳數3~30之脂環構造之基、含碳數6~30之芳香環構造之基、含碳數3~30之雜環構造之基或含碳數2~20之-NRBRC之基,L為單鍵時,R1為單鍵或鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為碳數7~30之多環之脂環式烴基或含碳數2~20之-NRBRC之基,RB及RC各獨立為碳數1~10之烷基或碳數3~10之環烷基,或表示該等基相互結合與該等所鍵結之氮原子一起構成之環員數3~20之環構造,M+為1價之鎓陽離子)。 A compound represented by the following formula (1), G7 1 -SO 3 - M + (1) (in the formula (1), L is -COO-*, -SO 2 O-, -CONR A At least one or a single bond selected from the group consisting of -, -O-, and -S-, and R A is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, * represents a bonding site with G, and L is When at least one selected from the group consisting of -COO-*, -SO 2 O-, -CONR A -, -O-, and -S-, R 1 is an unbonded fluorine on a carbon atom adjacent to SO 3 - A substituted or unsubstituted alkanediyl group having 1 to 10 carbon atoms, G is a group having an alicyclic structure having 3 to 30 carbon atoms, a group having an aromatic ring structure having a carbon number of 6 to 30, and a carbon number a group of 3 to 30 heterocyclic structures or a group having a carbon number of 2 to 20 -NR B R C. When L is a single bond, R 1 is a single bond or is not bonded to a carbon atom adjacent to SO 3 - A substituted or unsubstituted alkanediyl group having 1 to 10 carbon atoms, and G is a polycyclic alicyclic hydrocarbon group having 7 to 30 carbon atoms or a NR B R C group having 2 to 20 carbon atoms. R B and R C are each independently an alkyl group having 1 to 10 carbon atoms or a cycloalkyl group having 3 to 10 carbon atoms, or a ring member number 3 in which the groups are bonded to each other and bonded to the nitrogen atom. Ring structure of ~20 The M + is a monovalent cation). 一種以下述式(1)表示之化合物之製造方法,其具有下述步驟:使以下述式(i-a)表示之有機鹵化物與以E2SO3表示之亞硫酸鹽反應,獲得以下述式(i-b)表示之磺酸鹽之步驟,及使上述磺酸鹽與以MY表示之鎓鹽反應之步驟, (式(i-a)、(i-b)及(1)中,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種或單鍵,RA為氫原子或碳數1~20之1價烴基,*表示與G之鍵結部位,L為由-COO-*、-SO2O-、-CONRA-、-O-及-S-所組成群組中選出之至少一種時,R1為鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為含碳數3~30之脂環構造之基、含碳數6~30之芳香環構造之基、含碳數3~30之雜環構造之基或含碳數2~20之-NRBRC之基,L為單鍵時,R1為單鍵或鄰接於SO3 -之碳原子上未鍵結氟原子之經取代或未經取代之碳數1~10之烷二基,G為碳數7~30之多環之脂環式烴基或含碳數2~20之-NRBRC之基,RB及RC各獨立為碳數1~10之烷基或碳數3~10之環烷基,或表示該等基相互結合與該等所鍵結之氮原子一起構成之環員數3~20之環構造,X為鹵原子,E+為鹼金屬離子, M+為1價放射線分解性鎓陽離子,Y-為1價陰離子)。 A process for producing a compound represented by the following formula (1), which has a step of reacting an organic halide represented by the following formula (ia) with a sulfite represented by E 2 SO 3 to obtain the following formula ( Ib) a step of indicating a sulfonate, and a step of reacting the above sulfonate with an onium salt represented by MY, (In the formulas (ia), (ib) and (1), L is at least one selected from the group consisting of -COO-*, -SO 2 O-, -CONR A -, -O-, and -S- Or a single bond, R A is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, * represents a bonding site with G, and L is a group of -COO-*, -SO 2 O-, -CONR A -, -O When at least one selected from the group consisting of - and -S-, R 1 is a substituted or unsubstituted alkanediyl group having 1 to 10 carbon atoms adjacent to an unbonded fluorine atom on a carbon atom of SO 3 - , G is a base of an alicyclic structure having a carbon number of 3 to 30, a base of an aromatic ring having a carbon number of 6 to 30, a base of a heterocyclic structure having a carbon number of 3 to 30, or a carbon number of 2 to 20 - a group of NR B R C , when L is a single bond, R 1 is a single bond or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms adjacent to a fluorine atom not bonded to a carbon atom of SO 3 - , G is an alicyclic hydrocarbon group having a carbon number of 7 to 30 or a NR B R C group having a carbon number of 2 to 20, and R B and R C are each independently an alkyl group having 1 to 10 carbon atoms or carbon. a cycloalkyl group of 3 to 10, or a ring structure of 3 to 20 ring members which are bonded to the nitrogen atoms bonded to the groups, X is a halogen atom, and E + is an alkali metal ion. M + is a monovalent radiation Decomposable cation, Y - is a monovalent anion).
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Family Cites Families (6)

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KR101758398B1 (en) * 2009-09-11 2017-07-14 제이에스알 가부시끼가이샤 Radiation-sensitive composition and novel compound
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