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TW201351636A - Method for making a display device - Google Patents

Method for making a display device Download PDF

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Publication number
TW201351636A
TW201351636A TW102115223A TW102115223A TW201351636A TW 201351636 A TW201351636 A TW 201351636A TW 102115223 A TW102115223 A TW 102115223A TW 102115223 A TW102115223 A TW 102115223A TW 201351636 A TW201351636 A TW 201351636A
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TW
Taiwan
Prior art keywords
electrode
organic
layer
partition wall
thin film
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Application number
TW102115223A
Other languages
Chinese (zh)
Inventor
Masaru Kajitani
Kenji Kasahara
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Sumitomo Chemical Co
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Publication of TW201351636A publication Critical patent/TW201351636A/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/17Passive-matrix OLED displays
    • H10K59/173Passive-matrix OLED displays comprising banks or shadow masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • H10K59/8051Anodes
    • H10K59/80517Multilayers, e.g. transparent multilayers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices
    • H10K59/876Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

This invention provides a method for making a display device, the method being capable of forming an organic thin film layer with a uniform film thickness without undergoing an oxygen plasma processing. The display device contains a supporting substrate, partition walls, and a plurality of organic EL elements; each organic EL element contains sequentially from the supporting substrate side first electrodes, an organic thin film layer, and second electrodes. The method includes the step of preparing the partition walls by pattern forming a photosensitive resin composition containing a liquid repelling agent according to a photolithography, and a supporting substrate having first electrodes provided thereon, the step of cleaning the surface of the first electrodes with a solution containing at least an oxalic acid, a phosphoric acid, an acetic acid, a nitric acid, and hydrochloride, or a developing liquid for developing the photosensitive resin composition, the step of forming an organic thin film layer on the first electrodes with a coating method, and the step of forming the second electrodes on the organic thin film layer.

Description

顯示裝置之製造方法 Display device manufacturing method

本發明係關於顯示裝置之製造方法。 The present invention relates to a method of manufacturing a display device.

作為顯示裝置之一者,係有一種將有機電激發光元件(以下有時稱為「有機EL元件」)用作為像素的光源之顯示裝置。作為該像素所使用之有機EL元件的構成,係有採用微凹孔構造(微共振器構造)者(例如參考專利文獻1)。藉由採用此般構成,可達到色純度的提升,和既定視角範圍內的高亮度化。 One of the display devices is a display device that uses an organic electroluminescence element (hereinafter sometimes referred to as an "organic EL element") as a light source of a pixel. The configuration of the organic EL element used in the pixel is a micro-recess structure (microresonator structure) (for example, refer to Patent Document 1). By adopting such a configuration, it is possible to achieve an improvement in color purity and a high luminance in a predetermined viewing angle range.

(先前技術文獻) (previous technical literature)

(專利文獻) (Patent Literature)

專利文獻1:日本特開2002-367770號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2002-367770

上述顯示裝置中,對應於像素之多數個有機EL元件係排列配置在既定的支撐基板上。又,於支撐基板上,設置有用以劃分既定的分隔區之區隔壁,多數個有機EL元件係分別排列在由區隔壁所劃分之區域。 In the above display device, a plurality of organic EL elements corresponding to pixels are arranged in a row on a predetermined support substrate. Further, on the support substrate, a partition wall for dividing a predetermined partition is provided, and a plurality of organic EL elements are respectively arranged in a region partitioned by the partition walls.

各有機EL元件,係從支撐基板側依序積層第1電極、有機薄膜層及第2電極域而形成。 Each of the organic EL elements is formed by sequentially laminating a first electrode, an organic thin film layer, and a second electrode region from the side of the support substrate.

有機EL元件的有機薄膜層,例如可藉由塗佈法來形成。以下參考第13圖來說明有機薄膜層的形成方法。如第13A圖所示,首先準備形成有第1電極16與區隔壁13之支撐基板12。接著於該支撐基板12上,將含有成為有機薄膜層18之材料的油墨17供給至由區隔壁13所包圍之區域(凹部)15。所供給之油墨17,被容納於由隔壁13所包圍之區域15(參考第13B圖)。然後,藉由將油墨17的溶劑氣化來形成有機薄膜層18(參考第13C圖)。 The organic thin film layer of the organic EL element can be formed, for example, by a coating method. The method of forming the organic thin film layer will be described below with reference to Fig. 13. As shown in FIG. 13A, first, the support substrate 12 on which the first electrode 16 and the partition wall 13 are formed is prepared. Next, on the support substrate 12, the ink 17 containing the material which becomes the organic thin film layer 18 is supplied to the region (concave portion) 15 surrounded by the partition wall 13. The supplied ink 17 is accommodated in a region 15 surrounded by the partition wall 13 (refer to Fig. 13B). Then, the organic thin film layer 18 is formed by vaporizing the solvent of the ink 17 (refer to Fig. 13C).

又,當區隔壁13對油墨17顯示出親液性時,被供給至特定的區隔壁13之油墨,會在區隔壁13表面上傳遞,有時會溢出至鄰近的凹部15。為了防止此般油墨的流出,必須對區隔壁13賦予某種程度的撥液性。 Further, when the partition wall 13 exhibits lyophilicity to the ink 17, the ink supplied to the specific partition wall 13 is transmitted on the surface of the partition wall 13, and sometimes overflows to the adjacent recess 15. In order to prevent the outflow of the ink, it is necessary to impart a certain degree of liquid repellency to the partition wall 13.

因此,例如在形成區隔壁後,有時會對區隔壁施以氟氣的電漿處理,以對區隔壁13賦予撥液性。然而,該方法中,由於氟氣的反應生成物,導致有機薄膜層被污染,而使有機EL元件的特性劣化。 Therefore, for example, after forming the partition wall, the partition wall may be subjected to plasma treatment of fluorine gas to impart liquid repellency to the partition wall 13. However, in this method, the organic thin film layer is contaminated due to the reaction product of fluorine gas, and the characteristics of the organic EL element are deteriorated.

因此,亦有採取一種藉由使用含有撥液劑之感光性樹脂組成物來形成區隔壁,可不施以氟氣的電漿處理而對區隔壁賦予撥液性之方法。 Therefore, there is also a method of forming a partition wall by using a photosensitive resin composition containing a liquid-repellent agent, and imparting liquid repellency to the partition wall without applying a plasma treatment of fluorine gas.

使用此般區隔壁並以上述方法來形成有機薄膜層時,必然具有不一定能夠形成均一膜厚的有機薄膜層之問題。 When the organic thin film layer is formed by the above method using such a partition wall, there is a problem that it is not necessary to form an organic thin film layer having a uniform film thickness.

當形成膜厚不均一的有機薄膜層時,於膜厚較薄的部分電流會集中流通,而無法得到均一發光。此外,上述微凹孔構造中,雖對應於發光波長來設定各有機薄膜層的膜厚,但存在無法得到預期膜厚之有機薄膜層,而無法得到期望特性之問題。微凹孔構造中,由於有機薄膜層的膜厚對元件特性造成極大影響,所以更特別要求膜厚之面內均一性的提升。 When an organic thin film layer having a non-uniform film thickness is formed, current flows in a portion where the film thickness is thin, and uniform light emission cannot be obtained. Further, in the above-described micro-pit structure, although the film thickness of each organic thin film layer is set in accordance with the light-emitting wavelength, there is a problem that an organic thin film layer having a desired film thickness cannot be obtained, and desired characteristics cannot be obtained. In the micro-pit structure, since the film thickness of the organic thin film layer greatly affects the element characteristics, it is more particularly required to improve the in-plane uniformity of the film thickness.

有機薄膜層的膜厚之面內均一性的降低,可視為第1電極上的潤濕性不均之故。例如當在第1電極上局部地存在潤濕性差之部位時,由於在該部位上油墨被撥開而薄膜化,所以使得膜厚的面內均一性降低。因此,可考量在塗佈油墨前施以用來提升第1電極上的潤濕性之處理。例如,可藉由氧氣電漿處理來提高第1電極上的潤濕性。如此,在提高第1電極上的潤濕性後再供給油墨時,油墨可在第1電極上潤濕擴散,而得到均一膜厚的有機薄膜層。然而,當進行氧氣電漿處理時,區隔壁的表面被蝕刻,使該區隔壁的膜厚產生不均,並且使區隔壁的撥液性降低。如此,供給至凹部(由區隔壁所劃分之區域)內之油墨)有時會溢出,而產生無法如設計般地形成有機EL元件之問題。 The in-plane uniformity of the film thickness of the organic thin film layer is lowered, and it can be regarded as uneven wettability on the first electrode. For example, when a portion having poor wettability is locally present on the first electrode, since the ink is peeled off at this portion and thinned, the in-plane uniformity of the film thickness is lowered. Therefore, a treatment for improving the wettability on the first electrode before the application of the ink can be considered. For example, the wettability on the first electrode can be improved by oxygen plasma treatment. As described above, when the ink is supplied after the wettability of the first electrode is increased, the ink can be wetted and diffused on the first electrode to obtain an organic thin film layer having a uniform film thickness. However, when the oxygen plasma treatment is performed, the surface of the partition wall is etched to cause unevenness in the film thickness of the partition wall of the region, and the liquid repellency of the partition wall is lowered. As a result, the ink supplied to the concave portion (the region partitioned by the partition wall) sometimes overflows, causing a problem that the organic EL element cannot be formed as designed.

因此,本發明之目的在於提供一種不需進行氧氣電漿處理等,而能夠以均一膜厚形成有機薄膜層之顯示裝置之製造方法。 Accordingly, an object of the present invention is to provide a method of manufacturing a display device capable of forming an organic thin film layer with a uniform film thickness without performing oxygen plasma treatment or the like.

本發明係關於一種顯示裝置之製造方法,其係含有:支撐基板、劃分出該支撐基板上所預先設定的分隔區之區隔壁、以及分別設置在由該區隔壁所劃分之分隔區上之複數個有機EL元件;各有機EL元件從支撐基板側依序含有第1電極、有機薄膜層、及第2電極之顯示裝置之製造方法,其中含有:準備支撐基板之步驟,於該支撐基板上方係設置有:藉由微影技術使含有撥液劑之感光性樹脂組成物形成圖案而藉此形成之區隔壁、以及第1電極;藉由含有草酸、磷酸、乙酸、硝酸及鹽酸的至少任一種之溶液或是前述感光性樹脂組成物的顯影液,來洗淨前述第1電極的表面之步驟;於前述第1電極上藉由塗佈法形成有機薄膜層之步驟;以及於前述有機薄膜層上形成第2電極之步驟。 The present invention relates to a method of manufacturing a display device, comprising: a support substrate, a partition wall dividing a predetermined separation area on the support substrate, and a plurality of partitions respectively disposed on the partition divided by the partition wall of the partition a method of manufacturing a display device including a first electrode, an organic thin film layer, and a second electrode in order from the support substrate side, wherein the organic EL device includes a step of preparing a support substrate, and a top portion of the support substrate Provided is a partition wall formed by patterning a photosensitive resin composition containing a liquid repellent by a lithography technique, and a first electrode; and containing at least one of oxalic acid, phosphoric acid, acetic acid, nitric acid, and hydrochloric acid And a developing solution for the photosensitive resin composition to wash the surface of the first electrode; a step of forming an organic thin film layer by the coating method on the first electrode; and the organic thin film layer The step of forming the second electrode thereon.

又,各有機EL元件中,第1電極可為單層或二層以上,有機薄膜層可為單層或二層以上,第2電極可為單層或二層以上。 Further, in each of the organic EL elements, the first electrode may be a single layer or two or more layers, and the organic thin film layer may be a single layer or two or more layers, and the second electrode may be a single layer or two or more layers.

根據本發明,係藉由含有草酸、磷酸、乙酸、硝酸及鹽酸的至少任一種之溶液或用於是區隔壁的形成之感光性樹脂組成物的顯影液,洗淨前述第1電極的表面,來取代進行氧氣電漿處理之作法,如此可提高第1電極表面的潤濕性,並且在第1電極的表面全體上使該潤濕 性均一化。如此,能夠不需進行氧氣電漿處理等,而以均一膜厚形成有機薄膜層。 According to the invention, the surface of the first electrode is washed by a solution containing at least one of oxalic acid, phosphoric acid, acetic acid, nitric acid, and hydrochloric acid or a developing solution for forming a photosensitive resin composition which is a partition wall. Instead of performing the oxygen plasma treatment, the wettability of the surface of the first electrode can be improved, and the wetting is performed on the entire surface of the first electrode. Sexual homogenization. Thus, the organic thin film layer can be formed with a uniform film thickness without performing oxygen plasma treatment or the like.

1‧‧‧顯示裝置 1‧‧‧ display device

2‧‧‧支撐基板 2‧‧‧Support substrate

3‧‧‧區隔壁 3‧‧‧ next door

3a‧‧‧區隔壁的端部 End of the next door to the 3a‧‧

4‧‧‧有機EL元件 4‧‧‧Organic EL components

5‧‧‧凹部 5‧‧‧ recess

6‧‧‧第1電極 6‧‧‧1st electrode

7‧‧‧第1有機薄膜層(電洞注入層) 7‧‧‧1st organic film layer (hole injection layer)

8‧‧‧區隔壁形成用膜 8‧‧‧ partition film for partition formation

9‧‧‧第2有機薄膜層(發光層) 9‧‧‧2nd organic film layer (light-emitting layer)

10‧‧‧第2電極 10‧‧‧2nd electrode

12‧‧‧支撐基板 12‧‧‧Support substrate

13‧‧‧區隔壁 13‧‧‧ next door

15‧‧‧凹部 15‧‧‧ recess

16‧‧‧第1電極 16‧‧‧1st electrode

17‧‧‧油墨 17‧‧‧Ink

18‧‧‧有機薄膜層 18‧‧‧Organic film layer

19‧‧‧殘渣 19‧‧‧Residue

21‧‧‧光罩 21‧‧‧Photomask

22‧‧‧油墨 22‧‧‧Ink

第1圖為擴大有關本發明的一項實施形態之顯示裝置1的一部分而示意顯示之圖。 Fig. 1 is a view schematically showing a part of a display device 1 according to an embodiment of the present invention.

第2圖為擴大有關本發明的一項實施形態之顯示裝置1的一部分而示意顯示之俯視圖。 Fig. 2 is a plan view schematically showing a part of the display device 1 according to an embodiment of the present invention.

第3A圖為用以說明有關本發明的一項實施形態之顯示裝置之製造方法之圖。 Fig. 3A is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.

第3B圖為用以說明有關本發明的一項實施形態之顯示裝置之製造方法之圖。 Fig. 3B is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.

第3C圖為用以說明有關本發明的一項實施形態之顯示裝置之製造方法之圖。 Fig. 3C is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.

第4A圖為用以說明有關本發明的一項實施形態之顯示裝置之製造方法之圖。 Fig. 4A is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.

第4B圖為用以說明有關本發明的一項實施形態之顯示裝置之製造方法之圖。 Fig. 4B is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.

第4C圖為用以說明有關本發明的一項實施形態之顯示裝置之製造方法之圖。 Fig. 4C is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.

第5A圖為用以說明有關本發明的一項實施形態之顯示裝置之製造方法之圖。 Fig. 5A is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.

第5B圖為用以說明有關本發明的一項實施形態之顯示裝置之製造方法之圖。 Fig. 5B is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.

第5C圖為用以說明有關本發明的一項實施形態之顯示裝置之製造方法之圖。 Fig. 5C is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.

第6圖為擴大有關本發明的一項實施形態之顯示裝置1的一部分而示意顯示之俯視圖。 Fig. 6 is a plan view schematically showing a part of the display device 1 according to an embodiment of the present invention.

第7圖為擴大有關本發明的一項實施形態之顯示裝置1的一部分而示意顯示之圖。 Fig. 7 is a view schematically showing a part of the display device 1 according to an embodiment of the present invention.

第8圖為顯示第9圖的計算中所使用之發光材料的PL光譜之圖。 Fig. 8 is a view showing the PL spectrum of the luminescent material used in the calculation of Fig. 9.

第9圖為顯示微凹孔構造中之EL光譜之電洞注入層的膜厚相依性之圖。 Fig. 9 is a graph showing the film thickness dependence of the hole injection layer of the EL spectrum in the micro-pit structure.

第10圖為用以比較本發明之製造方法所製作之有機EL元件的EL光譜與發光材料的PL光譜之圖。 Fig. 10 is a view showing the EL spectrum of the organic EL device produced by the production method of the present invention and the PL spectrum of the luminescent material.

第11圖為用以比較本發明之製造方法所製作之有機EL元件的EL光譜與發光材料的PL光譜之圖。 Fig. 11 is a view showing the EL spectrum of the organic EL device produced by the production method of the present invention and the PL spectrum of the luminescent material.

第12圖為用以比較本發明之製造方法所製作之有機EL元件的EL光譜與發光材料的PL光譜之圖。 Fig. 12 is a view showing the EL spectrum of the organic EL device produced by the production method of the present invention and the PL spectrum of the luminescent material.

第13A圖為用以說明顯示裝置之製造方法之圖。 Fig. 13A is a view for explaining a method of manufacturing the display device.

第13B圖為用以說明顯示裝置之製造方法之圖。 Fig. 13B is a view for explaining a method of manufacturing the display device.

第13C圖為用以說明顯示裝置之製造方法之圖。 Fig. 13C is a view for explaining a method of manufacturing the display device.

以下參考圖面來更詳細說明本發明之實施形態。為了容易理解,圖面中之各構件的比例尺有時與實際者為不同。顯示裝置中,雖然亦存在有電極的引線等,但由於在本發明的說明中並無直接相關,故省略記載。就 層構造等之說明上的簡便,在以下所示之例子中,是以使支撐基板朝下配置之圖來一同說明,但本發明之顯示裝置並不必然配置於該上下左右方向的朝向,且不限於進行製造或使用等之形態,可適當地進行調整。 Embodiments of the present invention will be described in more detail below with reference to the drawings. For ease of understanding, the scale of each component in the drawing is sometimes different from the actual one. In the display device, there are also lead wires and the like of the electrodes, but since they are not directly related in the description of the present invention, the description thereof is omitted. on Although the description of the layer structure and the like is simple, in the following examples, the support substrate is arranged downward, but the display device of the present invention is not necessarily disposed in the vertical and horizontal directions. It is not limited to the form of manufacturing or use, and can be appropriately adjusted.

本發明係關於一種顯示裝置之製造方法,其係含有:支撐基板、劃分出該支撐基板上所預先設定的分隔區之區隔壁、以及分別設置在由該區隔壁所劃分之分隔區上之複數個有機EL元件;各有機EL元件從支撐基板側依序含有第1電極、有機薄膜層、及第2電極之顯示裝置之製造方法,其中含有:製備支撐基板之步驟,於該支撐基板上方係設置有:藉由微影技術使含有撥液劑之感光性樹脂組成物形成圖案而藉此形成之區隔壁、以及第1電極;藉由含有草酸、磷酸、乙酸、硝酸及鹽酸的至少任一種之溶液或是前述感光性樹脂組成物的顯影液,來洗淨前述第1電極的表面之步驟;於前述第1電極上藉由塗佈法形成有機薄膜層之步驟;以及於前述有機薄膜層上形成第2電極之步驟。 The present invention relates to a method of manufacturing a display device, comprising: a support substrate, a partition wall dividing a predetermined separation area on the support substrate, and a plurality of partitions respectively disposed on the partition divided by the partition wall of the partition a method of manufacturing a display device including a first electrode, an organic thin film layer, and a second electrode, each of which includes a first electrode, an organic thin film layer, and a second electrode, wherein the organic EL device includes a step of preparing a support substrate, and a top surface of the support substrate Provided is a partition wall formed by patterning a photosensitive resin composition containing a liquid repellent by a lithography technique, and a first electrode; and containing at least one of oxalic acid, phosphoric acid, acetic acid, nitric acid, and hydrochloric acid And a developing solution for the photosensitive resin composition to wash the surface of the first electrode; a step of forming an organic thin film layer by the coating method on the first electrode; and the organic thin film layer The step of forming the second electrode thereon.

顯示裝置主要有主動矩陣驅動型的裝置與被動矩陣驅動型的裝置。本發明可適用在此兩種驅動型的顯示裝置,但在本實施形態中,係以適用在主動矩陣驅動型的顯示裝置作為一例來說明顯示裝置。 The display device mainly includes an active matrix drive type device and a passive matrix drive type device. The present invention can be applied to the display devices of the two types of driving. However, in the present embodiment, the display device is applied to an active matrix driving type display device as an example.

<顯示裝置的構成> <Configuration of display device>

首先說明顯示裝置的構成。第1圖為擴大本實施形態之顯示裝置1的一部分而示意顯示之圖。第2圖為擴大本 實施形態之顯示裝置1的一部分而示意顯示之俯視圖。顯示裝置1主要是含有:支撐基板2,劃分出在該支撐基板2上所預先設定的分隔區之區隔壁3,以及分別設置在由區隔壁3所劃分之分隔區上之複數個有機EL元件4。 First, the configuration of the display device will be described. Fig. 1 is a view schematically showing a part of the display device 1 of the present embodiment. Figure 2 shows the enlargement A plan view schematically showing a part of the display device 1 of the embodiment. The display device 1 mainly includes a support substrate 2, a partition wall 3 that partitions a predetermined partition area on the support substrate 2, and a plurality of organic EL elements respectively disposed on the partitions partitioned by the partition walls 3. 4.

區隔壁3於支撐基板2上係形成例如為方格狀或長條狀。又,第2圖中係顯示設置有方格狀的區隔壁3之顯示裝置1作為實施的一形態。第2圖中,施有影線之區域係相當於區隔壁3。 The partition wall 3 is formed, for example, in a checkered or elongated shape on the support substrate 2. Moreover, in the second drawing, the display device 1 provided with the square partition 3 is shown as an embodiment. In Fig. 2, the region where the hatching is applied corresponds to the partition wall 3.

於支撐基板2上,設定有由區隔壁3與支撐基板2所規定之複數個凹部5。該凹部5相當於由區隔壁3所劃分之分隔區。 A plurality of recesses 5 defined by the partition walls 3 and the support substrate 2 are set on the support substrate 2. This recess 5 corresponds to a partition divided by the partition wall 3.

本實施形態之區隔壁3係設置為方格狀。因此,從支撐基板2之厚度方向Z的一方觀看時(以下有時稱為「俯視觀看」時),複數個凹部5配置為矩陣狀。亦即,凹部5在列方向X上隔著既定間隔,且在行方向Y上亦隔著既定間隔排列設置。各凹部5於俯視觀看時的形狀並無特別限定。例如,凹部5可形成為俯視觀看時呈大致矩形、大致橢圓形、或小橢圓形等形狀。本實施形態中,係設置俯視觀看時呈大致矩形之凹部5。本說明書中,上述列方向X及行方向Y,分別意味著與支撐基板2的厚度方向Z垂直之方向,且為相互垂直之方向。 The partition wall 3 of the present embodiment is formed in a checkered shape. Therefore, when viewed from one of the thickness directions Z of the support substrate 2 (hereinafter sometimes referred to as "viewing in plan view"), the plurality of recesses 5 are arranged in a matrix. That is, the concave portions 5 are arranged at a predetermined interval in the column direction X and are also arranged at a predetermined interval in the row direction Y. The shape of each recessed portion 5 in a plan view is not particularly limited. For example, the recess 5 may be formed in a shape of a substantially rectangular shape, a substantially elliptical shape, or a small elliptical shape when viewed in plan. In the present embodiment, a concave portion 5 having a substantially rectangular shape in plan view is provided. In the present specification, the column direction X and the row direction Y mean a direction perpendicular to the thickness direction Z of the support substrate 2, and are perpendicular to each other.

本實施形態之區隔壁3為所謂的順錐狀。亦即,本實施形態之區隔壁3係隨著遠離支撐基板2逐漸呈尖細狀。例如,以垂直於該延伸存在方向(行方向Y)之 平面來剖切在行方向Y上延伸存在之區隔壁時之剖面形狀,係形成為隨著遠離支撐基板2逐漸呈尖細狀。第1圖中,係顯示大致呈等腰梯形狀的區隔壁,當比較上底與支撐基板側的下底時,下底的寬度較上底更寬。又實際所形成之區隔壁的剖面並不一定須成為梯形狀,梯形狀的直線部分與角度可帶有圓緩部分,而形成為所謂的半圓狀(圓頂狀)。 The partition wall 3 of the present embodiment has a so-called forward tapered shape. That is, the partition wall 3 of the present embodiment gradually tapers away from the support substrate 2. For example, perpendicular to the direction of extension (row direction Y) The cross-sectional shape when the plane is cut in the row direction Y in the row direction Y is formed to be gradually tapered as it is away from the support substrate 2. In Fig. 1, a partition wall having a substantially isosceles trapeze shape is shown. When the upper bottom and the lower bottom of the support substrate side are compared, the width of the lower bottom is wider than the upper base. Further, the cross section of the partition wall actually formed does not necessarily have to be a trapezoidal shape, and the straight portion and the angle of the trapezoidal shape may have a rounded portion and are formed in a so-called semicircular shape (dome shape).

區隔壁3,於本實施形態中主要是設置在扣除設置有有機EL元件之區域的區域上。又,區隔壁3主要是設置在扣除設置有後述第1電極6之區域的區域上,且亦以使該端部3a重疊於第1電極6之方式形成於第1電極6的周緣部上。又,區隔壁3的端部3a,不須以覆蓋第1電極6的全部周緣部之方式來形成。例如在形成後述長條狀的區隔壁3時,亦可以使區隔壁的端部覆蓋第1電極6的4邊中之相對向的2邊之方式形成區隔壁。本實施形態中,區隔壁3的端部3a,係以覆蓋第1電極6的全部周緣部之方式來形成。 In the present embodiment, the partition wall 3 is mainly provided in a region where the region where the organic EL element is provided is subtracted. In addition, the partition wall 3 is mainly provided in a region where the region where the first electrode 6 to be described later is provided is deducted, and is also formed on the peripheral edge portion of the first electrode 6 so that the end portion 3a is superposed on the first electrode 6. Further, the end portion 3a of the partition wall 3 is not required to cover the entire peripheral portion of the first electrode 6. For example, when forming the elongated partition wall 3 to be described later, the partition wall may be formed so that the end portion of the partition wall covers the two opposite sides of the four sides of the first electrode 6. In the present embodiment, the end portion 3a of the partition wall 3 is formed to cover the entire peripheral edge portion of the first electrode 6.

又,作為其他實施形態,亦可在區隔壁與支撐基板之間,進一步設置有在第1電極上具有開口之絕緣膜。 Further, as another embodiment, an insulating film having an opening in the first electrode may be further provided between the partition wall and the support substrate.

有機EL元件4係設置在由區隔壁3所劃分之分隔區(亦即凹部5)。如本實施形態般,當設置方格狀的區隔壁3時,各有機EL元件4分別設置在各凹部5。因此,有機EL元件4與各凹部5相同地配置為矩陣狀,並且於 支撐基板2上,在列方向X上隔著既定間隔並在行方向Y上亦隔著既定間隔來排列設置。 The organic EL element 4 is disposed in a partition (i.e., the recess 5) partitioned by the partition wall 3. As in the present embodiment, when the square partition walls 3 are provided, the respective organic EL elements 4 are provided in the respective concave portions 5. Therefore, the organic EL element 4 is arranged in a matrix shape in the same manner as each of the concave portions 5, and The support substrate 2 is arranged in the column direction X at a predetermined interval and in the row direction Y at a predetermined interval.

本實施形態中,係設置有3種有機EL元件4。亦即設置有:(1)發射紅色光之紅色有機EL元件4R、(2)發射綠色光之綠色有機EL元件4G、及(3)發射藍色光之藍色有機EL元件4B。此等3種有機EL元件4R、4G、4B,例如可藉由依序在行方向Y上重複地配置下列(I)、(II)、(III)的列而分別排列設置(參考第2圖)。 In the present embodiment, three kinds of organic EL elements 4 are provided. That is, (1) a red organic EL element 4R that emits red light, (2) a green organic EL element 4G that emits green light, and (3) a blue organic EL element 4B that emits blue light. The three kinds of organic EL elements 4R, 4G, and 4B can be arranged, for example, by sequentially arranging the following columns (I), (II), and (III) in the row direction Y (see FIG. 2). .

(I)在列方向X上分別隔著既定間隔配置紅色有機EL元件4R之列。 (I) A row of the red organic EL elements 4R is arranged at a predetermined interval in the column direction X.

(II)在列方向X上分別隔著既定間隔配置綠色有機EL元件4G之列。 (II) The green organic EL element 4G is arranged in a row at a predetermined interval in the column direction X.

(III)在列方向X上分別隔著既定間隔配置藍色有機EL元件4B_之列。 (III) The blue organic EL elements 4B_ are arranged at predetermined intervals in the column direction X.

又,作為其他實施形態,亦可在上述3種有機EL元件之外,例如更設置發射白色光之有機EL元件。此外,亦可藉由1種有機EL元件來實現單色顯示裝置。 Further, as another embodiment, in addition to the above-described three types of organic EL elements, for example, an organic EL element that emits white light may be further provided. Further, a monochrome display device can be realized by one type of organic EL element.

有機EL元件4係從支撐基板2側依序積層第1電極、有機薄膜層、及第2電極而構成。本說明書中,係將設置在第1電極6與第2電極10之間之層中含有有機物之層稱為有機薄膜層。有機EL元件4係至少具備1層發光層以作為有機薄膜層。又,有機EL元件,除了1層發光層之外,可因應必要進一步具備與發光層不同之有機 薄膜層或無機層。例如於第1電極6與第2電極10之間,可設置電洞注入層、電洞輸送層、電子阻擋層、電子輸送層、及電子注入層等。此外,於第1電極6與第2電極10之間,可設置2層以上的發光層。有機EL元件4中,第1電極可為單層或雙層以上,有機薄膜層可為單層或雙層以上,第2電極可為單層或雙層以上。 The organic EL element 4 is formed by sequentially laminating a first electrode, an organic thin film layer, and a second electrode from the side of the support substrate 2. In the present specification, a layer containing an organic substance in a layer provided between the first electrode 6 and the second electrode 10 is referred to as an organic thin film layer. The organic EL element 4 is provided with at least one light-emitting layer as an organic thin film layer. Further, in addition to the one-layer light-emitting layer, the organic EL element may further have an organic layer different from the light-emitting layer. Thin film layer or inorganic layer. For example, a hole injection layer, a hole transport layer, an electron blocking layer, an electron transport layer, an electron injection layer, and the like may be provided between the first electrode 6 and the second electrode 10. Further, two or more light-emitting layers may be provided between the first electrode 6 and the second electrode 10. In the organic EL element 4, the first electrode may be a single layer or a double layer or more, and the organic thin film layer may be a single layer or a double layer or more, and the second electrode may be a single layer or a double layer or more.

有機EL元件4係具備第1電極6與第2電極10作為由陽極與陰極所構成之一對電極。第1電極6與第2電極10中之一方的電極設為陽極,另一方的電極設為陰極。 The organic EL element 4 includes a first electrode 6 and a second electrode 10 as a counter electrode formed of an anode and a cathode. One of the first electrode 6 and the second electrode 10 is an anode, and the other electrode is a cathode.

本實施形態中,作為例子之一,係說明在支撐基板2上依序積層具有陽極的功能之第1電極6、具有電洞注入層的功能之第1有機薄膜層7、具有發光層的功能之第2有機薄膜層9、具有陰極的功能之第2電極10而構成之有機EL元件4。 In the present embodiment, a first electrode 6 having a function of an anode, a first organic thin film layer 7 having a function of a hole injection layer, and a function of a light-emitting layer are sequentially formed on the support substrate 2 as an example. The second organic thin film layer 9 and the organic EL element 4 having the second electrode 10 having a function as a cathode.

本實施形態中,係設置有3種有機EL元件,但此等係分別與第2有機薄膜層(本實施形態中為發光層)9的構成不同。紅色有機EL元件4R具備發射紅色光之紅色發光層9。綠色有機EL元件4G具備發射綠色光之綠色發光層9。藍色有機EL元件4B具備發射藍色光之藍色發光層9。 In the present embodiment, three kinds of organic EL elements are provided, but these are different from the configuration of the second organic thin film layer (the light-emitting layer in the present embodiment) 9, respectively. The red organic EL element 4R has a red light-emitting layer 9 that emits red light. The green organic EL element 4G has a green light-emitting layer 9 that emits green light. The blue organic EL element 4B is provided with a blue light-emitting layer 9 that emits blue light.

本實施形態中,係在各有機EL元件4設置第1電極6。亦即,在支撐基板2上設置有與有機EL元件4相同數目之第1電極6。第1電極6係對應於有機EL元 件4的配置而設置,並與有機EL元件4相同地配置為矩陣狀。又,本實施形態之區隔壁3,主要是在扣除第1電極6之區域上形成為方格狀,但該端部3a進一步以覆蓋第1電極6的周緣部之方式來形成(參考第1圖)。 In the present embodiment, the first electrode 6 is provided in each of the organic EL elements 4. That is, the same number of first electrodes 6 as the organic EL elements 4 are provided on the support substrate 2. The first electrode 6 corresponds to the organic EL element The arrangement of the members 4 is provided in the same manner as the organic EL element 4, and is arranged in a matrix. Further, the partition wall 3 of the present embodiment is mainly formed in a checkered shape in a region where the first electrode 6 is subtracted, but the end portion 3a is further formed to cover the peripheral edge portion of the first electrode 6 (refer to the first Figure).

具有電洞注入層的功能之第1有機薄膜層7,於凹部5中係設置在第1電極6上。該第1有機薄膜層7,可因應必要,因應有機EL元件種類的不同使該材料或膜厚呈不同來設置。從第1有機薄膜層7之形成步驟的簡易度之觀點來看,可由相同材料及膜厚來形成全部第1有機薄膜層7。此外,當形成如後述般之微凹孔構造的有機EL元件時,以產生光共振之方式,因應有機EL元件的種類來調整第1有機薄膜層7的膜厚。 The first organic thin film layer 7 having the function of the hole injection layer is provided on the first electrode 6 in the recess 5. The first organic thin film layer 7 may be provided such that the material or film thickness differs depending on the type of the organic EL element as necessary. From the viewpoint of the ease of the formation step of the first organic thin film layer 7, all of the first organic thin film layers 7 can be formed of the same material and film thickness. Further, when an organic EL element having a micro-pit structure as described later is formed, the film thickness of the first organic thin film layer 7 is adjusted in accordance with the type of the organic EL element so as to cause optical resonance.

具有發光層的功能之第2有機薄膜層9,於凹部5中係設置在第1有機薄膜層7上。如上述般,發光層係因應有機EL元件的種類來設置。因此,紅色發光層9被設置在設置有紅色有機EL元件4R之凹部5。綠色發光層9被設置在設置有綠色有機EL元件4G之凹部5。藍色發光層9被設置在設置有藍色有機EL元件4B之凹部5。 The second organic thin film layer 9 having a function as a light-emitting layer is provided on the first organic thin film layer 7 in the concave portion 5. As described above, the light-emitting layer is provided in accordance with the type of the organic EL element. Therefore, the red light-emitting layer 9 is provided in the recess 5 provided with the red organic EL element 4R. The green light-emitting layer 9 is provided in the recess 5 provided with the green organic EL element 4G. The blue light-emitting layer 9 is provided in the recess 5 provided with the blue organic EL element 4B.

第2電極係設置在有機薄膜層上,但在本說明書中,所謂設置在層「上」,係可採取接觸設置於下層之形態、以及與下層相間離地設置之形態。例如在有機薄膜層與設置於該上方之第2電極之間,可設置既定的無機層。 The second electrode system is provided on the organic thin film layer. However, in the present specification, the layer "on" is provided in a form in which the contact is provided in the lower layer and in a state in which the lower layer is separated from the lower layer. For example, a predetermined inorganic layer may be provided between the organic thin film layer and the second electrode provided above.

本實施形態中,第2電極10係形成於設置 有有機EL元件4之顯示區域的全面上。亦即,第2電極10不僅形成在第2有機薄膜層9上,亦形成於區隔壁3上,並涵蓋複數個有機EL元件連續地形成,而設置作為全部有機EL元件4的共通電極。 In the embodiment, the second electrode 10 is formed in the setting There is a display area of the organic EL element 4 in its entirety. In other words, the second electrode 10 is formed not only on the second organic thin film layer 9, but also on the partition wall 3, and covers a plurality of organic EL elements continuously, and is provided as a common electrode of all the organic EL elements 4.

〈顯示裝置之製造方法〉 <Method of Manufacturing Display Device>

以下參考第3圖至第5圖來說明顯示裝置之製造方法。 A method of manufacturing the display device will be described below with reference to FIGS. 3 to 5.

(製備支撐基板之步驟) (Steps of preparing the support substrate)

本步驟中,係準備支撐基板,於該支撐基板上方係設置有:藉由微影技術使含有撥液劑之感光性樹脂組成物形成圖案而藉此形成之區隔壁、以及第1電極。亦即,本步驟中,係準備於其上方設置有撥液性的區隔壁以及第1電極之支撐基板。本步驟中,可預先準備於該上方設置有區隔壁以及第1電極之支撐基板,或是在本步驟中藉由形成區隔壁及/或第1電極來準備設置有區隔壁以及第1電極之支撐基板。為主動矩陣驅動型的顯示裝置時,可將預先形成有用以個別地驅動複數個有機EL元件之電路之基板用作為支撐基板2。例如,可將預先形成有TFT(Thin Film Transistor:薄膜電晶體)及電容器等之基板用作為支撐基板。 In this step, a support substrate is prepared, and a partition wall formed by patterning a photosensitive resin composition containing a liquid-repellent agent by a lithography technique and a first electrode are provided on the support substrate. In other words, in this step, the liquid-repellent partition wall and the support substrate of the first electrode are prepared above the liquid crystal. In this step, the support substrate on which the partition wall and the first electrode are provided may be prepared in advance, or in this step, the partition wall and the first electrode may be prepared by forming the partition wall and/or the first electrode. Support the substrate. In the case of an active matrix drive type display device, a substrate on which a circuit for individually driving a plurality of organic EL elements is formed in advance can be used as the support substrate 2. For example, a substrate on which a TFT (Thin Film Transistor), a capacitor, or the like is formed in advance can be used as a support substrate.

本實施形態中,首先將複數個第1電極6以矩陣狀形成於支撐基板2上(參考第3A圖)。第1電極6,例如可於支撐基板2上的一面形成導電性薄膜,並藉由微影技術形成矩陣狀的圖案而形成。此外,例如可將在既定部位形成有開口之遮罩配置在支撐基板2上,並透過該遮 罩使導電性材料選擇性地沉積於支撐基板2上的既定部位而藉此形成第1電極6的圖案。關於第1電極6的材料,將於之後詳述。 In the present embodiment, first, a plurality of first electrodes 6 are formed in a matrix on the support substrate 2 (refer to FIG. 3A). The first electrode 6 can be formed, for example, by forming a conductive thin film on one surface of the support substrate 2 and forming a matrix pattern by lithography. Further, for example, a mask having an opening formed at a predetermined portion may be disposed on the support substrate 2 and transmitted through the cover The cover selectively deposits a conductive material on a predetermined portion on the support substrate 2, thereby forming a pattern of the first electrode 6. The material of the first electrode 6 will be described in detail later.

接著在本步驟中,使用含有撥液劑之感光性樹脂組成物並藉由微影技術來形成圖案,藉此,以使該端部接觸於前述第1電極上之方式,形成區隔壁的圖案。本實施形態中,首先將含有撥液劑之感光性樹脂組成物塗佈於前述支撐基板2上,以形成區隔壁形成用膜8。作為前述感光性樹脂組成物的塗佈方法,例如可列舉出旋轉塗佈法或狹縫塗佈法等。 Next, in this step, a pattern of the partition wall is formed by using a photosensitive resin composition containing a liquid repellent and forming a pattern by a lithography technique so that the end portion is in contact with the first electrode. . In the present embodiment, first, a photosensitive resin composition containing a liquid-repellent agent is applied onto the support substrate 2 to form a film for forming a partition wall. The coating method of the photosensitive resin composition may, for example, be a spin coating method or a slit coating method.

將前述感光性樹脂組成物塗佈於前述支撐基板上後,通常會進行預烘烤。例如在80至110℃的溫度、60秒至180秒間之條件下加熱支撐基板2而藉此進行預烘烤,以去除感光性樹脂組成物中的溶劑(參考第3B圖)。 After the photosensitive resin composition is applied onto the support substrate, prebaking is usually performed. The support substrate 2 is heated, for example, at a temperature of 80 to 110 ° C for 60 seconds to 180 seconds to thereby perform prebaking to remove the solvent in the photosensitive resin composition (refer to FIG. 3B ).

接著將用以遮蔽既定圖案的光之光罩21配置在支撐基板2上,透過該光罩21曝光區隔壁形成用膜8。感光性樹脂組成物有正型及負型的感光性樹脂組成物,本步驟中可使用任一種感光性樹脂組成物。當使用正型感光性樹脂組成物時,係將光照射在區隔壁形成用膜8中之主要應形成有區隔壁3之部位之外的的殘餘部位上。此外,當使用負型感光性樹脂組成物時,係將光照射在區隔壁形成用膜8中之主要應形成有區隔壁3之部位上。本步驟中,係參考第3C圖來說明。如第3C圖所示,將光罩21配置在形成有區隔壁形成用膜8之基板上,並透過光罩21 照射光線,藉此將光照射在區隔壁形成用膜8中之主要應形成有區隔壁3之部位上。第3C圖中,係以箭頭記號示意顯示照射在區隔壁形成用膜8之光。 Next, the photomask 21 for shielding the light of the predetermined pattern is placed on the support substrate 2, and the film 8 for forming the partition wall is exposed through the mask 21. The photosensitive resin composition has a positive and negative photosensitive resin composition, and any of the photosensitive resin compositions can be used in this step. When a positive photosensitive resin composition is used, light is irradiated onto the remaining portion of the film for forming a partition wall 8 other than the portion where the partition wall 3 is to be formed. In addition, when a negative photosensitive resin composition is used, light is irradiated onto a portion of the film for forming a partition wall 8 where the partition wall 3 is mainly formed. In this step, it is explained with reference to FIG. 3C. As shown in FIG. 3C, the photomask 21 is placed on the substrate on which the film for partition wall formation 8 is formed, and is transmitted through the photomask 21. The light is irradiated, whereby the light is irradiated onto the portion of the film for forming the partition wall 8 where the partition wall 3 is mainly formed. In Fig. 3C, the light irradiated on the partition wall forming film 8 is schematically indicated by an arrow mark.

接著使用後述顯影液,對曝光後的區隔壁形成用膜8進行顯影。藉此使區隔壁3形成圖案(參考第4A圖)。顯影後進行後烘烤。例如在200至230℃的溫度、15分鐘至60分鐘間之條件下加熱基板而藉此進行後烘烤,以使區隔壁3硬化。 Next, the film for forming the partition wall after the exposure is developed using the developer described later. Thereby, the partition wall 3 is patterned (refer to FIG. 4A). Post-baking after development. The partition wall 3 is hardened by, for example, heating the substrate at a temperature of 200 to 230 ° C for 15 minutes to 60 minutes.

如此,使用含有撥液劑之感光性樹脂組成物並藉由微影技術來形成區隔壁的圖案,藉此可得到賦予撥液性之區隔壁。本實施形態所使用之區隔壁的接觸角,例如相對於苯甲醚而言,較佳為25°至60°,更佳為30°至45°。 In this manner, by using a photosensitive resin composition containing a liquid repellent and forming a pattern of the partition walls by lithography, a partition wall for imparting liquid repellency can be obtained. The contact angle of the partition wall used in the present embodiment is, for example, preferably from 25 to 60, more preferably from 30 to 45 with respect to the anisole.

如上述般,區隔壁的形成中所使用之感光性樹脂組成物,係有負型及正型者。 As described above, the photosensitive resin composition used for forming the partition walls is of a negative type and a positive type.

(負型感光性樹脂組成物) (negative photosensitive resin composition)

負型感光性樹脂組成物,為光的照射部分不溶於顯影液而殘存者。 The negative photosensitive resin composition remains in which the irradiated portion of the light is insoluble in the developer.

感光性樹脂組成物,一般係調配有黏合劑樹脂、交聯劑、光反應起始劑、溶劑、及其他添加劑。 The photosensitive resin composition is generally formulated with a binder resin, a crosslinking agent, a photoreaction initiator, a solvent, and other additives.

黏合劑樹脂為預先進行聚合者。該例子可列舉出本身不具有聚合性之非聚合性黏合劑樹脂、以及導入具有聚合性之取代基之聚合性黏合劑樹脂。黏合劑樹脂,以聚苯乙烯為標準,藉由凝膠滲透層析法(GPC:Gel Permeation Chromatography)所求取之重量平均分子量,位於5,000至400,000之範圍內。 The binder resin is a polymer that is previously polymerized. In this example, a non-polymerizable binder resin which does not have polymerizability itself, and a polymerizable binder resin which introduces a polymerizable substituent are mentioned. Adhesive resin, based on polystyrene, by gel permeation chromatography (GPC: Gel) Permeation Chromatography) The weight average molecular weight sought is in the range of 5,000 to 400,000.

黏合劑樹脂,例如可列舉出酚樹脂、酚醛樹脂、三聚氰胺樹脂、丙烯酸樹脂、環氧樹脂、聚酯樹脂等。黏合劑樹脂可使用均聚物以及組合2種以上的單體之共聚物中的任一種。黏合劑樹脂,相對於上述感光性樹脂組成物的全體固體成分,以質量分率計通常為5%至90%。 Examples of the binder resin include a phenol resin, a phenol resin, a melamine resin, an acrylic resin, an epoxy resin, and a polyester resin. As the binder resin, any of a homopolymer and a copolymer of two or more kinds of monomers may be used. The binder resin is usually 5% to 90% by mass based on the total solid content of the photosensitive resin composition.

交聯劑係可藉由因光的照射從光聚合起始劑所產生的活性自由基、酸等而聚合之化合物,例如可列舉出具有聚合性碳-碳不飽合鍵之化合物。交聯劑可為於分子內具有1個聚合性碳-碳不飽合鍵之單官能的化合物,或是具有2個以上的聚合性碳-碳不飽合鍵之2官能或3官能以上的多官能化合物。上述感光性樹脂組成物中,當黏合劑樹脂與交聯劑之合計量為100質量份時,交聯劑通常為0.1質量份以上70質量份以下。此外,上述感光性樹脂組成物中,當黏合劑樹脂與交聯劑之合計量為100質量份時,光反應起始劑通常為1質量份以上30質量份以下。 The crosslinking agent is a compound which can be polymerized by an active radical, an acid or the like generated from a photopolymerization initiator by irradiation of light, and examples thereof include a compound having a polymerizable carbon-carbon unsaturated bond. The crosslinking agent may be a monofunctional compound having one polymerizable carbon-carbon unsaturated bond in the molecule, or a bifunctional or trifunctional or higher polyfunctional having two or more polymerizable carbon-carbon unsaturated bonds. Compound. In the photosensitive resin composition, when the total amount of the binder resin and the crosslinking agent is 100 parts by mass, the crosslinking agent is usually 0.1 parts by mass or more and 70 parts by mass or less. In the photosensitive resin composition, when the total amount of the binder resin and the crosslinking agent is 100 parts by mass, the photoreaction initiator is usually 1 part by mass or more and 30 parts by mass or less.

(正型感光性樹脂組成物) (Positive photosensitive resin composition)

另一方面,正型感光性樹脂組成物,為光的照射部分可溶於顯影液而殘存者。正型感光性樹脂組成物,一般是藉由將樹脂與在光反應下親水化之化合物予以複合化而構成。 On the other hand, the positive photosensitive resin composition is one in which the irradiated portion of the light is soluble in the developer. The positive photosensitive resin composition is generally composed of a compound in which a resin is hydrophilized under a photoreaction.

正型感光性樹脂組成物,可使用組合有:如酚醛樹脂、聚羥基苯乙烯、丙烯酸樹脂、甲基丙烯酸樹 脂、聚醯亞胺等之具有耐藥性與密著性的樹脂,與光分解性化合物而成者。 A positive photosensitive resin composition which can be used in combination: phenolic resin, polyhydroxystyrene, acrylic resin, methacrylic acid tree A resin having resistance and adhesion such as lipid or polyimine, and a photodegradable compound.

(撥液劑) (liquid dispensing agent)

上述正型或負型感光性樹脂組成物中所含有之撥液劑,例如可列舉出含氟化合物、含聚矽氧烷化合物等,較佳者為對有機溶劑亦顯示出優異的撥液性之含氟化合物。 The liquid-repellent agent contained in the positive- or negative-type photosensitive resin composition may, for example, be a fluorine-containing compound or a polysiloxane-containing compound, and preferably exhibits excellent liquid repellency to an organic solvent. Fluorinated compound.

含氟化合物,例如可列舉出具有碳數1至8之直鏈狀或分枝狀的氟烷基及/或氟聚醚基之化合物。含氟化合物,較佳為具有交聯性基之聚合物,更佳為具有碳數4至6的氟烷基及/或氟聚醚基且具有交聯性基之聚合物。此外,含氟化合物較佳對顯影液具有可溶性功能。含氟化合物只要在區隔壁形成後可對區隔壁表面賦予撥液性者即可,並不限定於聚合物,亦可為低分子化合物。 The fluorine-containing compound may, for example, be a compound having a linear or branched fluoroalkyl group and/or a fluoropolyether group having 1 to 8 carbon atoms. The fluorine-containing compound is preferably a polymer having a crosslinkable group, more preferably a polymer having a fluoroalkyl group and/or a fluoropolyether group having 4 to 6 carbon atoms and having a crosslinkable group. Further, the fluorine-containing compound preferably has a solubility function to the developer. The fluorine-containing compound may be provided with a liquid-repellent property on the surface of the partition wall after the partition wall is formed, and is not limited to a polymer, and may be a low molecular compound.

上述交聯性基,是將交聯性的功能賦予至含氟化合物者,可例示出乙烯性不飽和鍵結基或是環氧基、羥基等。只要具有可與區隔壁的形成中所使用之感光性樹脂組成物交聯之功能者,則交聯性基的種類並不限定於上述者。 The crosslinkable group is a group which imparts a crosslinkability to a fluorine-containing compound, and examples thereof include an ethylenically unsaturated bond group, an epoxy group, and a hydroxyl group. The type of the crosslinkable group is not limited to the above, as long as it has a function of being able to crosslink with the photosensitive resin composition used for forming the partition walls.

撥液劑的具體例,可列舉出MEGAFAC RS-101、RS-102、RS-105、RS-401、RS-402、RS-501、RS-502、RS-718(以上為DIC公司製),OPTOOL DAC、OPTOACE HP系列(以上為Daikin工業公司製),全氟(甲基)丙烯酸酯、全氟二(甲基)丙烯酸酯等。 Specific examples of the liquid-repellent agent include MEGAFAC RS-101, RS-102, RS-105, RS-401, RS-402, RS-501, RS-502, and RS-718 (all manufactured by DIC Corporation). OPTOOL DAC, OPTOACE HP series (above, manufactured by Daikin Industries, Ltd.), perfluoro(meth)acrylate, perfluorodi(meth)acrylate, and the like.

上述撥液劑可單獨使用1種或組合2種以 上使用。撥液劑,相對於上述感光性樹脂組成物之扣除撥液劑後的全體固體成分,以質量分率計通常為0.1質量份以上3質量份以下。 The above liquid repellent may be used alone or in combination of two. Used on. The liquid-repellent agent is usually 0.1 parts by mass or more and 3 parts by mass or less based on the mass fraction of the total solid content of the photosensitive resin composition after the de-liquidizing agent.

(顯影液) (developer)

顯影中所使用之顯影液,例如可列舉出氫氧化鉀水溶液、氫氧化鈉水溶液、氫氧化四甲基銨(TMAH)水溶液等。 Examples of the developing solution used for development include a potassium hydroxide aqueous solution, a sodium hydroxide aqueous solution, and a tetramethylammonium hydroxide (TMAH) aqueous solution.

區隔壁3的形狀及其配置,可因應像素數及解析度等之顯示裝置的規格或製造的容易度等來適當地設定。例如,區隔壁3之列方向X或行方向Y上的寬度約為5μm至50μm左右,區隔壁3的高度約為0.5μm至5μm左右,在列方向X或行方向Y上相鄰之區隔壁3彼此間的間隔,亦即凹部5之列方向X或行方向Y上的寬度約為10μm至500μm左右。此外,第1電極6之列方向X及行方向Y上的寬度分別為10μm至500μm左右。 The shape and arrangement of the partition walls 3 can be appropriately set in accordance with the specifications of the display device such as the number of pixels and the resolution, the ease of manufacture, and the like. For example, the width in the column direction X or the row direction Y of the partition walls 3 is about 5 μm to 50 μm, and the height of the partition walls 3 is about 0.5 μm to 5 μm, and adjacent portions in the column direction X or the row direction Y are partition walls. The interval between the three, that is, the width X of the concave portion 5 or the width in the row direction Y is about 10 μm to 500 μm. Further, the width in the column direction X of the first electrode 6 and the row direction Y are each about 10 μm to 500 μm.

(洗淨第1電極的表面之步驟) (Step of washing the surface of the first electrode)

本步驟中,係洗淨前述第1電極的表面(參考第4A圖、第4B圖)。 In this step, the surface of the first electrode is washed (refer to FIGS. 4A and 4B).

如第4A圖所示,形成於第1電極6上之區隔壁形成用膜8,即使使用顯影液來進行顯影處理,該殘渣19有時亦會附著於第1電極6上而殘存。本步驟中,藉由洗淨第1電極6的表面,來去除區隔壁形成用膜8的殘渣19或污染,使第1電極6的表面清淨化。藉此可提高第1電極6的表面的潤濕性,並且在第1電極6的表面全體上使該潤濕性均一化。 As shown in FIG. 4A, the film for forming a partition wall 8 formed on the first electrode 6 is left to adhere to the first electrode 6 and remains even if the developing process is performed using a developing solution. In this step, by washing the surface of the first electrode 6, the residue 19 or the contamination of the partition wall forming film 8 is removed, and the surface of the first electrode 6 is cleaned. Thereby, the wettability of the surface of the first electrode 6 can be improved, and the wettability can be made uniform over the entire surface of the first electrode 6.

本步驟中,係藉由含有草酸、磷酸、乙酸、硝酸及鹽酸的至少任一種之溶液或是前述感光性樹脂組成物的顯影液,來洗淨第1電極的表面。 In this step, the surface of the first electrode is washed by a solution containing at least one of oxalic acid, phosphoric acid, acetic acid, nitric acid, and hydrochloric acid or a developing solution of the photosensitive resin composition.

本步驟中,作為洗淨中所使用之顯影液,可使用藉由微影技術來形成區隔壁時所能夠使用之顯影液。例如可使用氫氧化鉀、氫氧化鈉、氫氧化四甲基銨(TMAH)水溶液。藉由使用此般顯影液,可有效率地去除區隔壁形成用膜8的殘渣19。又,本步驟中所使用之顯影液,可使用與形成區隔壁時所使用之顯影液為相同組成的顯影液,或是不同組成的顯影液。使用不同組成的顯影液時,可更有效率地去除顯影步驟中所無法去除之殘存的殘渣。 In this step, as the developer used for the cleaning, a developer which can be used when the partition walls are formed by the lithography technique can be used. For example, potassium hydroxide, sodium hydroxide or tetramethylammonium hydroxide (TMAH) aqueous solution can be used. By using such a developing solution, the residue 19 of the film for partition wall formation 8 can be removed efficiently. Further, the developer used in this step may be a developer having the same composition as that of the developer used to form the partition walls, or a developer having a different composition. When a developer having a different composition is used, the residue remaining in the development step which cannot be removed can be removed more efficiently.

又,本步驟中所使用之顯影液的濃度,較佳係低於在形成區隔壁時所使用之顯影液的濃度。例如當以形成區隔壁時所使用之顯影液的濃度作為A(重量%),以本步驟中所使用之顯影液的濃度為B(重量%)時,「A/B」較佳為1至25,更佳為2至5。藉由在該濃度下洗淨第1電極,可抑制區隔壁被蝕刻之情形。 Further, the concentration of the developer used in this step is preferably lower than the concentration of the developer used in forming the partition walls. For example, when the concentration of the developer used to form the partition wall is A (% by weight), and the concentration of the developer used in this step is B (% by weight), "A/B" is preferably 1 to 25, more preferably 2 to 5. By cleaning the first electrode at this concentration, it is possible to suppress the etching of the partition walls.

本步驟中,洗淨中所使用之含有草酸、磷酸、乙酸、硝酸及鹽酸的至少任一種之溶液,例如可列舉出鹽酸與氯化亞鐵溶液之混合溶液、鹽酸與硝酸之混合溶液、磷酸與硝酸與乙酸之混合溶液、及草酸水溶液等。 In this step, a solution containing at least one of oxalic acid, phosphoric acid, acetic acid, nitric acid, and hydrochloric acid used in the washing may, for example, be a mixed solution of hydrochloric acid and a ferrous chloride solution, a mixed solution of hydrochloric acid and nitric acid, or phosphoric acid. A mixed solution of nitric acid and acetic acid, an aqueous solution of oxalic acid, or the like.

該溶液可因應第1電極的種類來選擇適當者。例如當第1電極是由ITO(Indium Tin Oxide:氧化銦錫)薄膜所構成時,較佳係使用鹽酸與氯化亞鐵溶液之混合溶 液、鹽酸與硝酸之混合溶液、或是磷酸與乙酸與硝酸之混合溶液來洗淨,此等當中,更佳係使用磷酸與乙酸與硝酸之混合溶液來洗淨。此外,例如當第1電極是由IZO(Indium Zinc Oxide:氧化銦鋅)薄膜所構成時,較佳係使用磷酸與乙酸與硝酸之混合溶液,或是使用草酸水溶液來洗淨。 This solution can be selected in accordance with the type of the first electrode. For example, when the first electrode is composed of an ITO (Indium Tin Oxide) film, it is preferred to use a mixture of hydrochloric acid and a ferrous chloride solution. The liquid, a mixed solution of hydrochloric acid and nitric acid, or a mixed solution of phosphoric acid and acetic acid and nitric acid is used for washing, and among these, it is more preferable to use a mixed solution of phosphoric acid and acetic acid and nitric acid to wash. Further, for example, when the first electrode is made of an IZO (Indium Zinc Oxide) film, it is preferred to use a mixed solution of phosphoric acid and acetic acid and nitric acid or an aqueous solution of oxalic acid.

當使用鹽酸與氯化亞鐵溶液之混合溶液來洗淨由ITO所構成之第1電極時,較佳為具有鹽酸5至25重量%、氯化亞鐵10至30重量%的濃度之混合溶液,更佳為具有鹽酸17.5重量%、氯化亞鐵20重量%的濃度之混合溶液。此外,當使用磷酸與乙酸與硝酸之混合溶液來洗淨由ITO所構成之第1電極時,較佳為具有磷酸60至80重量%、乙酸0.1至20重量%、硝酸0.1至10重量%的濃度之混合溶液,更佳為具有磷酸71重量%、乙酸10.5重量%、硝酸2.2重量%的濃度之混合溶液。 When the first electrode composed of ITO is washed with a mixed solution of hydrochloric acid and a ferrous chloride solution, a mixed solution having a concentration of 5 to 25% by weight of hydrochloric acid and 10 to 30% by weight of ferrous chloride is preferred. More preferably, it is a mixed solution having a concentration of 17.5% by weight of hydrochloric acid and 20% by weight of ferrous chloride. Further, when the first electrode composed of ITO is washed with a mixed solution of phosphoric acid and acetic acid and nitric acid, it is preferably 60 to 80% by weight of phosphoric acid, 0.1 to 20% by weight of acetic acid, and 0.1 to 10% by weight of nitric acid. The mixed solution of the concentration is more preferably a mixed solution having a concentration of 71% by weight of phosphoric acid, 10.5% by weight of acetic acid, and 2.2% by weight of nitric acid.

此外,當使用磷酸與乙酸與硝酸之混合溶液來洗淨由IZO所構成之第1電極時,較佳為具有磷酸0.1至20重量%、乙酸0.1至10重量%、硝酸0.1至10重量%的濃度之混合溶液,更佳為具有磷酸7.1重量%、乙酸1.1重量%、硝酸0.2重量%的濃度之混合溶液。 Further, when the first electrode composed of IZO is washed with a mixed solution of phosphoric acid and acetic acid and nitric acid, it preferably has 0.1 to 20% by weight of phosphoric acid, 0.1 to 10% by weight of acetic acid, and 0.1 to 10% by weight of nitric acid. The mixed solution of the concentration is more preferably a mixed solution having a concentration of 7.1% by weight of phosphoric acid, 1.1% by weight of acetic acid, and 0.2% by weight of nitric acid.

此外,當使用草酸水溶液來洗淨由IZO所構成之第1電極時,該濃度較佳為1至10重量%。 Further, when the first electrode composed of IZO is washed with an aqueous oxalic acid solution, the concentration is preferably from 1 to 10% by weight.

藉由使用含有草酸、磷酸、乙酸、硝酸及鹽酸的至少任一種之溶液來洗淨第1電極的表面,可去除區隔壁形成用膜8的殘渣19或污染,有時第1電極6的表 面亦被蝕刻。藉此可提高第1電極6的表面的潤濕性,並且在第1電極6的表面全體上使該潤濕性均一化。 By washing the surface of the first electrode with a solution containing at least one of oxalic acid, phosphoric acid, acetic acid, nitric acid, and hydrochloric acid, the residue 19 or contamination of the film for forming the partition wall 8 can be removed, and the surface of the first electrode 6 may be removed. The face is also etched. Thereby, the wettability of the surface of the first electrode 6 can be improved, and the wettability can be made uniform over the entire surface of the first electrode 6.

如上述般,藉由洗淨第1電極6的表面,可使各第1電極6的表面一致地達到親液化。又,洗淨,只要可使含有草酸、磷酸、乙酸、硝酸及鹽酸的至少任一種之溶液或是用於區隔壁的形成之感光性樹脂組成物的顯影液接觸於第1電極的表面,則該方法並無特別限定。例如,洗淨可藉由將第1電極的表面,浸漬於含有草酸、磷酸、乙酸、硝酸及鹽酸的至少任一種之溶液或是區隔壁的形成所使用之感光性樹脂組成物的顯影液來實施。或者是,洗淨可藉由將含有草酸、磷酸、乙酸、硝酸及鹽酸的至少任一種之溶液或是區隔壁的形成所使用之感光性樹脂組成物的顯影液,塗佈於第1電極的表面來實施。或者是,洗淨可藉由噴淋方式,將含有草酸、磷酸、乙酸、硝酸及鹽酸的至少任一種之溶液或是區隔壁的形成所使用之感光性樹脂組成物的顯影液,吹送至第1電極的表面來實施。 As described above, by washing the surface of the first electrode 6, the surface of each of the first electrodes 6 can be uniformly lyophilized. In addition, as long as a solution containing at least one of oxalic acid, phosphoric acid, acetic acid, nitric acid, and hydrochloric acid or a developer containing a photosensitive resin composition for forming a partition wall is brought into contact with the surface of the first electrode, This method is not particularly limited. For example, the surface of the first electrode may be immersed in a solution containing at least one of oxalic acid, phosphoric acid, acetic acid, nitric acid, and hydrochloric acid or a developer of a photosensitive resin composition used for forming a partition wall. Implementation. Alternatively, the cleaning may be applied to the first electrode by a solution containing at least one of oxalic acid, phosphoric acid, acetic acid, nitric acid, and hydrochloric acid or a photosensitive resin composition used for forming a partition wall. The surface is implemented. Alternatively, the cleaning solution may be sprayed to a solution containing at least one of oxalic acid, phosphoric acid, acetic acid, nitric acid, and hydrochloric acid or a developer of a photosensitive resin composition used for forming a partition wall. The surface of the 1 electrode is implemented.

在洗淨前述第1電極6的表面後進行水洗,藉此可從支撐基板上,去除含有草酸、磷酸、乙酸、硝酸及鹽酸的至少任一種之溶液或是前述感光性樹脂組成物的顯影液。然後進行乾燥。 After washing the surface of the first electrode 6 and washing with water, a solution containing at least one of oxalic acid, phosphoric acid, acetic acid, nitric acid, and hydrochloric acid or a developer of the photosensitive resin composition can be removed from the support substrate. . Then it is dried.

(形成有機薄膜層之步驟) (Step of forming an organic thin film layer)

本步驟中,係藉由塗佈法將有機薄膜層形成於第1電極6上。本步驟中,係藉由塗佈法來形成至少接觸於第1電極6所設置之有機薄膜層(本實施形態中為第1有機薄膜 層)。本實施形態中,係藉由塗佈法來形成第1有機薄膜層7及第2有機薄膜層9。 In this step, an organic thin film layer is formed on the first electrode 6 by a coating method. In this step, the organic thin film layer provided in contact with at least the first electrode 6 is formed by a coating method (in the present embodiment, the first organic thin film) Floor). In the present embodiment, the first organic thin film layer 7 and the second organic thin film layer 9 are formed by a coating method.

又,從結束上述洗淨第1電極的表面之步驟的時點開始,至開始進行用以形成接觸於第1電極6所設置之有機薄膜層(本實施形態中為第1有機薄膜層)之油墨的塗佈之時點為止之時間,係愈短愈佳,具體而言,較佳為2小時以內,更加為30分鐘以內。又,結束洗淨第1電極的表面之步驟的時點係上述乾燥完成之時刻,開始進行油墨的塗佈之時點,係指最初塗佈油墨之時刻。 Further, from the time when the step of cleaning the surface of the first electrode is completed, the ink for forming the organic thin film layer (the first organic thin film layer in the present embodiment) provided in contact with the first electrode 6 is started. The shorter the time from the application of the coating, the better, and more preferably, it is within 2 hours, and more preferably within 30 minutes. Moreover, the point at which the step of washing the surface of the first electrode is completed is the timing at which the drying is completed, and the point at which the application of the ink is started is the time at which the ink is first applied.

本步驟中,首先將含有用以形成第1有機薄膜層7之材料的油墨22,供給至由區隔壁3所包圍之區域(凹部5)(參考第4C圖)。油墨,可考量區隔壁3的形狀、成膜步驟的簡易度、及成膜性等條件,以最適當的方法來供給。油墨例如可藉由噴墨印刷法、噴嘴塗佈法、凸版印刷法、凹版印刷法等來供給。 In this step, first, the ink 22 containing the material for forming the first organic thin film layer 7 is supplied to a region (recess 5) surrounded by the partition walls 3 (refer to FIG. 4C). The ink can be supplied in the most appropriate manner by considering the shape of the partition 3, the ease of the film formation step, and the film forming property. The ink can be supplied, for example, by an inkjet printing method, a nozzle coating method, a relief printing method, a gravure printing method, or the like.

如第4C圖所示,供給至由區隔壁3所包圍之區域(凹部5)的油墨22,係在第1電極上潤濕擴散,並擴散至區隔壁3的側面,但由於區隔壁3顯示出撥液性,所以可防止油墨溢出至相鄰的凹部之情形。如此,藉由設置顯示出撥液性之區隔壁,可確實地將油墨容納於由區隔壁3所包圍之區域(凹部5)。 As shown in Fig. 4C, the ink 22 supplied to the region (recess 5) surrounded by the partition wall 3 is wet-diffused on the first electrode and diffused to the side surface of the partition wall 3, but the partition wall 3 is displayed. The liquid repellency is removed, so that the ink can be prevented from overflowing to the adjacent concave portion. As described above, by providing the partition wall showing the liquid repellency, the ink can be surely accommodated in the region (recess 5) surrounded by the partition wall 3.

接著,藉由使油墨22固化來形成第1有機薄膜層7(參考第5A圖)。油墨的固化,例如可藉由自然乾燥、加熱乾燥、真空乾燥等來進行。此外,當油墨含有可 藉由施以能量來進行聚合之材料時,可在供給油墨後加熱薄膜或將光照射在薄膜來使構成有機薄膜層之材料進行聚合。如此,藉由使構成有機薄膜層之材料進行聚合,相對於在該有機薄膜層(第1有機薄膜層)上更形成其他有機薄膜層(第2有機薄膜層)時所使用之油墨,可使該第1有機薄膜層變得難溶。 Next, the first organic thin film layer 7 is formed by curing the ink 22 (refer to FIG. 5A). The curing of the ink can be carried out, for example, by natural drying, heat drying, vacuum drying, or the like. In addition, when the ink contains When the material to be polymerized is applied by energy, the film may be heated after the ink is supplied or the film may be irradiated onto the film to polymerize the material constituting the organic film layer. By polymerizing the material constituting the organic thin film layer, the ink used in forming the other organic thin film layer (the second organic thin film layer) on the organic thin film layer (the first organic thin film layer) can be used. This first organic thin film layer becomes poorly soluble.

如上述般,本發明中,係在提高第1電極的表面的潤濕性的同時,在第1電極的表面全體上進行使該潤濕性均一化之處理,所以在油墨的溶劑氣化而形成薄膜化時,油墨不會被局部地撥開而能夠均一地保持在第1電極上而乾燥。因此可形成均一膜厚的第1有機薄膜層7。 As described above, in the present invention, the wettability of the surface of the first electrode is increased, and the wettability is uniformized on the entire surface of the first electrode. Therefore, the solvent of the ink is vaporized. When the film formation is formed, the ink is not partially removed and can be uniformly held on the first electrode to be dried. Therefore, the first organic thin film layer 7 having a uniform film thickness can be formed.

接著形成具有發光層的功能之第2有機薄膜層9。第2有機薄膜層9可與第1有機薄膜層7同樣地形成。亦即,將含有用以形成紅色發光層9之材料的油墨、含有用以形成綠色發光層9之材料的油墨、含有用以形成藍色發光層9之材料的油墨之3種油墨,分別供給至由區隔壁3所包圍之區域,並使此等油墨固化來形成各發光層9。 Next, a second organic thin film layer 9 having a function as a light-emitting layer is formed. The second organic thin film layer 9 can be formed in the same manner as the first organic thin film layer 7. That is, the ink containing the material for forming the red light-emitting layer 9, the ink containing the material for forming the green light-emitting layer 9, and the ink containing the ink for forming the blue light-emitting layer 9 are respectively supplied. The light-emitting layer 9 is formed by solidifying the ink to the region surrounded by the partition walls 3.

(形成第2電極之步驟) (Step of forming the second electrode)

本步驟中,係將第2電極形成於有機薄膜層上。本實施形態中,第2電極10係形成於設置有有機EL元件4之顯示區域的全面上。亦即,第2電極10不僅在第2有機薄膜層9上,亦形成於區隔壁3上,並涵蓋複數個有機EL元件而連續地形成。藉由如此形成第2電極,而設置具有 全部有機EL元件4的共通電極之功能之第2電極10。 In this step, the second electrode is formed on the organic thin film layer. In the present embodiment, the second electrode 10 is formed over the entire display region where the organic EL element 4 is provided. In other words, the second electrode 10 is formed not only on the second organic thin film layer 9 but also on the partition wall 3, and is formed continuously covering a plurality of organic EL elements. By forming the second electrode in this way, the setting has The second electrode 10 which functions as a common electrode of all of the organic EL elements 4.

以上係說明設置方格狀的區隔壁之形態的顯示裝置,但如上述般,亦可在支撐基板上設置長條狀的區隔壁。第6圖為擴大本實施形態之顯示裝置的一部分而示意顯示之俯視圖。該圖中,施以影線之區域相當於區隔壁3。第7圖為顯示以垂直於列方向X之平面來剖切顯示裝置之顯示裝置的剖面形狀。又,以垂直於行方向Y之平面來剖切顯示裝置之顯示裝置的剖面形狀,係與第1圖相同。本實施形態之顯示裝置與前述實施形態之顯示裝置的構成幾乎為共通,所以在以下內容中僅就相異之部分說明,對於相對應之部分,有時會參考同一圖號並省略重複說明。 In the above description, a display device in which a square-shaped partition wall is provided is described. However, as described above, a long partition wall may be provided on the support substrate. Fig. 6 is a plan view schematically showing a part of the display device of the embodiment. In the figure, the area where the hatching is applied corresponds to the partition wall 3. Fig. 7 is a view showing the sectional shape of the display device which cuts the display device in a plane perpendicular to the column direction X. Further, the cross-sectional shape of the display device of the display device is cut in a plane perpendicular to the row direction Y, which is the same as in the first drawing. The display device of the present embodiment is almost the same as the configuration of the display device of the above-described embodiment. Therefore, in the following description, only the differences will be described, and the corresponding parts will be referred to with the same reference numerals and the description will not be repeated.

在設置長條狀的區隔壁時,區隔壁係例如由在行方向Y上延伸存在之複數條區隔壁構件所構成。該區隔壁構件,係在列方向X上隔著既定間隔而配置。在設置長條狀的區隔壁之形態中,係藉由長條狀的區隔壁與支撐基板來規定長條狀的凹部。 When a long-shaped partition wall is provided, the partition wall is constituted by, for example, a plurality of partition wall members extending in the row direction Y. The partition member in this region is disposed at a predetermined interval in the column direction X. In the form in which the elongated partition walls are provided, the elongated recesses are defined by the elongated partition walls and the support substrate.

在設置長條狀的區隔壁時,有機EL元件4係在行方向Y上延伸存在之各凹部中,分別在行方向Y上隔著既定間隔而配置。 When the elongated partition walls are provided, the organic EL elements 4 are arranged in the respective recesses extending in the row direction Y, and are arranged in the row direction Y at predetermined intervals.

第1電極6,與上述實施形態相同地配置為矩陣狀。區隔壁3,係以該端部3a覆蓋第1電極6之列方向X上之一方的端部與另一方的端部之方式來形成(參考第1圖)。如第7圖所示,本實施形態中,第1電極6之行 方向Y上的端部,並未由區隔壁所覆蓋。 The first electrodes 6 are arranged in a matrix shape in the same manner as in the above embodiment. The partition wall 3 is formed such that the end portion 3a covers one end portion of the first electrode 6 in the column direction X and the other end portion (refer to Fig. 1). As shown in Fig. 7, in the present embodiment, the first electrode 6 is on the line. The end in the direction Y is not covered by the partition wall.

本實施形態中,第1有機薄膜層7及第2有機薄膜層9係分別於在行方向Y上所延伸存在之各凹部上延伸存在而形成,並以涵蓋複數個有機EL元件而連接之方式形成。 In the present embodiment, the first organic thin film layer 7 and the second organic thin film layer 9 are formed so as to extend over the respective concave portions extending in the row direction Y, and are connected to cover a plurality of organic EL elements. form.

<有機EL元件的構成> <Configuration of Organic EL Element>

以下更詳細地說明有機EL元件的構成。有機EL元件係具有至少1層的發光層作為有機薄膜層。如上述般,有機EL元件,例如可具有電洞注入層、電洞輸送層、電子阻擋層、電洞阻擋層、電子輸送層、及電子注入層等,作為有機薄膜層。 The configuration of the organic EL element will be described in more detail below. The organic EL element has at least one light-emitting layer as an organic thin film layer. As described above, the organic EL element may have, for example, a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, an electron injecting layer, or the like as an organic thin film layer.

本實施形態之有機EL元件所能夠採取之層構成的一例如下所示。 An example of the layer configuration that the organic EL device of the present embodiment can take is as follows.

a)陽極/發光層/陰極 a) anode / luminescent layer / cathode

b)陽極/電洞注入層/發光層/陰極 b) anode / hole injection layer / luminescent layer / cathode

c)陽極/電洞注入層/發光層/電子注入層/陰極 c) anode / hole injection layer / luminescent layer / electron injection layer / cathode

d)陽極/電洞注入層/發光層/電子輸送層/電子注入層/陰極 d) anode/hole injection layer/light-emitting layer/electron transport layer/electron injection layer/cathode

e)陽極/電洞注入層/電洞輸送層/發光層/陰極 e) anode/hole injection layer/hole transport layer/light-emitting layer/cathode

f)陽極/電洞注入層/電洞輸送層/發光層/電子注入層/陰極 f) anode/hole injection layer/hole transport layer/light-emitting layer/electron injection layer/cathode

g)陽極/電洞注入層/電洞輸送層/發光層/電子輸送層/電子注入層/陰極 g) anode/hole injection layer/hole transport layer/light-emitting layer/electron transport layer/electron injection layer/cathode

h)陽極/發光層/電子注入層/陰極 h) anode / luminescent layer / electron injection layer / cathode

i)陽極/發光層/電子輸送層/電子注入層/陰極 i) anode / luminescent layer / electron transport layer / electron injection layer / cathode

(在此,記號「/」表示由記號「/」夾持之各層係鄰接而積層之意,以下相同) (Here, the symbol "/" indicates that each layer held by the symbol "/" is adjacent to each other and is layered. The same applies hereinafter)

本實施形態之有機EL元件,可具有2層以上的發光層。上述a)至i)之層構成中的任一項中,當將夾持於陽極與陰極中之積層體設為「構造單位A」時,作為具有2層發光層之有機EL元件之構成的例子,可列舉出下列j)所示之層構成。2個某(構造單位A)的層構成,可互為相同或不同。 The organic EL device of the present embodiment may have two or more light-emitting layers. In any one of the layer configurations of the above-mentioned a) to i), when the layered body sandwiched between the anode and the cathode is referred to as "structural unit A", it is constituted as an organic EL element having two light-emitting layers. As an example, the layer constitution shown by the following j) is mentioned. The layer composition of two (structural unit A) may be the same or different from each other.

j)陽極/(構造單位A)/電荷產生層/(構造單位A)/陰極 j) Anode / (structural unit A) / charge generation layer / (structural unit A) / cathode

在此,所謂電荷產生層,為藉由施以電場而產生電洞與電子之層。 Here, the charge generating layer is a layer that generates holes and electrons by applying an electric field.

電荷產生層,可列舉出例如由氧化釩、氧化銦錫(Indium Tin Oxide:略稱為ITO)、氧化銦鋅(Indium Zinc Oxide:略稱為IZO)、氧化鉬等所構成之薄膜。 The charge generating layer may, for example, be a film composed of vanadium oxide, indium tin oxide (ITO), indium zinc oxide (Indium Zinc Oxide: abbreviated as IZO), or molybdenum oxide.

此外,當將「(構造單位A)/電荷產生層」設為「構造單位B」時,作為具有3層以上的發光層之有機EL元件的構成,可列舉出下列k)所示之層構成。 In addition, when the "(structural unit A) / charge generation layer" is the "structural unit B", the composition of the organic EL element having three or more light-emitting layers is as shown in the following k). .

k)陽極/(構造單位B)x/(構造單位A)/陰極 k) anode / (structural unit B) x / (structural unit A) / cathode

記號「x」係表示2以上之整數,(構造單位B)x表示構造單位B經x段積層而成之積層體。此外,複數個(構造單位B)的層構成,可互為相同或不同。 The symbol "x" indicates an integer of 2 or more, and (structural unit B) x indicates a laminated body in which the structural unit B is laminated by the x-segment. Further, a plurality of layers (structural unit B) may be identical or different from each other.

此外,亦可不設置電荷產生層,直接積層 複數層發光層而構成有機EL元件。 In addition, the charge generation layer may not be provided, and the layer may be directly laminated. A plurality of light-emitting layers constitute an organic EL element.

<支撐基板> <Support substrate>

支撐基板,較佳係採用在製造有機EL元件之步驟中不會產生化學變化者。支撐基板的材料,例如可列舉出玻璃、塑膠、高分子薄膜、及矽基板,以及此等之積層體等。 The support substrate is preferably one which does not cause a chemical change in the step of manufacturing the organic EL element. Examples of the material of the support substrate include glass, plastic, polymer film, and ruthenium substrate, and the like.

<陽極> <anode>

陽極係使用具有光穿透性之電極。該電極可使用電傳導率高之金屬氧化物或金屬的單層膜及積層膜。具體而言,可列舉出由氧化銦、氧化鋅、氧化錫、ITO(Indium Tin Oxide:氧化銦錫)、氧化銦鋅(Indium Zinc Oxide:略稱IZO)等之金屬氧化物;金、鉑、銀、銅、鋁、鎂等金屬,及至少含有前述金屬1種以上之合金等所構成之單層膜及積層膜。此外,積層膜的構成,例如可列舉出ITO\Ag\ITO、IZO\Ag\IZO、ITO\APC(AgPdCu合金)\ITO、IZO\APC(AgPdCu合金)\IZO、ITO\AgCu合金\ITO、IZO\AgCu合金\IZO、ITO\AgMg合金\ITO、IZO\AgMg合金\IZO等。陽極的製作方法,例如可列舉出真空蒸鍍法、濺鍍法、離子蒸鍍法、電鍍法等。 The anode is an electrode having light permeability. As the electrode, a metal oxide or a metal monolayer film and a laminated film having high electrical conductivity can be used. Specific examples thereof include metal oxides such as indium oxide, zinc oxide, tin oxide, ITO (Indium Tin Oxide), and indium zinc oxide (Indium Zinc Oxide: IZO); gold, platinum, and the like. A metal such as silver, copper, aluminum or magnesium, and a single layer film and a laminated film comprising at least one or more alloys of the above metals. Further, examples of the composition of the laminated film include ITO\Ag\ITO, IZO\Ag\IZO, ITO\APC (AgPdCu alloy)\ITO, IZO\APC (AgPdCu alloy)\IZO, ITO\AgCu alloy\ITO, IZO\AgCu alloy\IZO, ITO\AgMg alloy\ITO, IZO\AgMg alloy\IZO, etc. Examples of the method for producing the anode include a vacuum deposition method, a sputtering method, an ion deposition method, and a plating method.

<陰極> <cathode>

陰極材料較佳為功函數小且容易進行電子對發光層之注入,且電傳導率高的材料。此外,在從陽極側取光之構成的有機EL元件中,由於藉由陰極將從發光層所放射之光反射至陽極側,所以陰極材料較佳為相對於可見光之反射率高的材料。該陰極材料例如可列舉出金屬、合金、 石墨及石墨層間化合物。前述金屬可列舉出鹼金屬、鹼土類金屬、過渡金屬及週期表13族金屬,具體例可列舉出鋰、鈉、鉀、銣、銫、鈹、鎂、鈣、鍶、鋇、鋁、鈧、釩、鋅、釔、銦、鈰、釤、銪、鋱、鐿等。前述合金,例如可列舉出前述金屬中之2種以上的金屬之合金;以及前述金屬中之1種以上與選自由金、銀、鉑、銅、錳、鈦、鈷、鎳、鎢、及錫所組成之群組的1種以上的金屬之合金等,具體例可列舉出鎂-銀合金、鎂-銦合金、鎂-鋁合金、銦-銀合金、鋰-鋁合金、鋰-鎂合金、鋰-銦合金、鈣-鋁合金等。此外,陰極可為透明電極,該材料例如可列舉出氧化銦、氧化鋅、氧化錫、ITO、及IZO等之導電性金屬氧化物;聚苯胺或其衍生物、聚噻吩或其衍生物等之導電性有機物。又,陰極可具有積層2層以上之積層構造。此外,電子注入層亦可用作為陰極。 The cathode material is preferably a material having a small work function and easy electron injection into the light-emitting layer and high electrical conductivity. Further, in the organic EL device having the light-receiving light from the anode side, since the cathode emits light emitted from the light-emitting layer to the anode side, the cathode material is preferably a material having a high reflectance with respect to visible light. Examples of the cathode material include metals and alloys. Graphite and graphite intercalation compounds. Examples of the metal include an alkali metal, an alkaline earth metal, a transition metal, and a Group 13 metal of the periodic table. Specific examples thereof include lithium, sodium, potassium, rubidium, cesium, cesium, magnesium, calcium, strontium, barium, aluminum, strontium, Vanadium, zinc, antimony, indium, antimony, bismuth, antimony, antimony, antimony, etc. The alloy may, for example, be an alloy of two or more of the above metals; and one or more of the above metals may be selected from the group consisting of gold, silver, platinum, copper, manganese, titanium, cobalt, nickel, tungsten, and tin. Specific examples of the alloy of one or more kinds of metals, such as a magnesium-silver alloy, a magnesium-indium alloy, a magnesium-aluminum alloy, an indium-silver alloy, a lithium-aluminum alloy, a lithium-magnesium alloy, and the like are exemplified. Lithium-indium alloy, calcium-aluminum alloy, and the like. Further, the cathode may be a transparent electrode, and examples of the material include conductive metal oxides such as indium oxide, zinc oxide, tin oxide, ITO, and IZO; polyaniline or a derivative thereof, polythiophene or a derivative thereof, and the like. Conductive organic matter. Further, the cathode may have a laminated structure in which two or more layers are laminated. Further, an electron injecting layer can also be used as the cathode.

陰極的製作方法,例如可列舉出真空蒸鍍法、離子蒸鍍法等。 Examples of the method for producing the cathode include a vacuum deposition method, an ion deposition method, and the like.

陽極或陰極的膜厚,可考量所要求之特性或成膜步驟的容易度等來適當地設定,例如為10nm至10μm,較佳為20nm至1μm,更佳為50nm至500nm。 The film thickness of the anode or the cathode can be appropriately set in consideration of desired characteristics or easiness of the film formation step, and the like, for example, is 10 nm to 10 μm, preferably 20 nm to 1 μm, and more preferably 50 nm to 500 nm.

<電洞注入層> <hole injection layer>

構成電洞注入層之電洞注入材料,例如可列舉出氧化釩、氧化鉬、氧化釕、及氧化鋁等之氧化物;苯基胺系化合物;星爆型(starburst)胺系化合物;酞菁系化合物;非晶碳;聚苯胺;及聚噻吩衍生物等。 Examples of the hole injecting material constituting the hole injection layer include oxides such as vanadium oxide, molybdenum oxide, cerium oxide, and aluminum oxide; phenylamine compounds; starburst amine compounds; Compound; amorphous carbon; polyaniline; and polythiophene derivatives.

電洞注入層的成膜方法,例如可列舉出從含有電洞注入材料之溶液中所進行的成膜。例如可藉由既定的塗佈法將含有電洞注入材料之溶液予以塗佈成膜,然後藉由乾燥及燒結使溶劑揮發而固化,藉此形成電洞注入層。不論是有機材料為高分子材料或可溶性低分子材料,只要可藉由塗佈法來成膜,均可適用本發明之製造方法。 The film formation method of the hole injection layer may, for example, be a film formation from a solution containing a hole injection material. For example, a solution containing a hole injecting material can be applied to a film by a predetermined coating method, and then the solvent is volatilized by drying and sintering to be solidified, thereby forming a hole injection layer. Whether the organic material is a polymer material or a soluble low molecular material, the production method of the present invention can be applied as long as it can be formed by a coating method.

電洞注入層的膜厚,可考量所要求之特性或成膜步驟的容易度等來適當地設定,例如為1nm至1μm,較佳為2nm至500nm,更佳為5nm至200nm。 The film thickness of the hole injection layer can be appropriately set in consideration of desired characteristics or easiness of the film formation step, and the like, for example, is 1 nm to 1 μm, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.

<電洞輸送層> <hole transport layer>

構成電洞輸送層之電洞輸送材料,例如可列舉出聚乙烯咔唑或其衍生物、聚矽烷或其衍生物、側鏈或主鏈具有芳香族胺之聚矽氧烷或其衍生物、吡唑啉衍生物、芳胺衍生物、二苯代乙烯衍生物、三苯基二胺衍生物、聚苯胺或其衍生物、聚噻吩或其衍生物、聚芳胺或其衍生物、聚吡咯或其衍生物、聚(對伸苯基乙烯)或其衍生物、或聚(2,5-噻吩乙烯)或其衍生物等。 Examples of the hole transporting material constituting the hole transporting layer include polyvinylcarbazole or a derivative thereof, polydecane or a derivative thereof, a polyoxyalkylene having a side chain or a main chain having an aromatic amine, or a derivative thereof. Pyrazoline derivative, arylamine derivative, diphenylethylene derivative, triphenyldiamine derivative, polyaniline or its derivative, polythiophene or its derivative, polyarylamine or its derivative, polypyrrole Or a derivative thereof, poly(p-phenylene vinyl) or a derivative thereof, or poly(2,5-thiopheneethylene) or a derivative thereof.

此等當中,電洞輸送材料較佳為聚乙烯咔唑或其衍生物、聚矽烷或其衍生物、於側鏈或主鏈具有芳香族胺化合物基之聚矽氧烷衍生物、聚苯胺或其衍生物、聚噻吩或其衍生物、聚芳胺或其衍生物、聚(對伸苯乙烯)或其衍生物、或是聚(2,5-噻吩乙烯)或其衍生物等之高分子電洞輸送材料,更佳為聚乙烯咔唑或其衍生物、聚矽烷或其衍生物、於側鏈或主鏈具有芳香族胺之聚矽氧烷衍生物。為低分子 電洞輸送材料時,較佳係分散於高分子黏合劑來使用。 Among these, the hole transporting material is preferably polyvinyl carbazole or a derivative thereof, polydecane or a derivative thereof, a polyoxyalkylene derivative having an aromatic amine compound group in a side chain or a main chain, polyaniline or a polymer thereof, a polythiophene or a derivative thereof, a polyarylamine or a derivative thereof, a poly(p-styrene) or a derivative thereof, or a polymer such as poly(2,5-thiopheneethylene) or a derivative thereof The hole transporting material is more preferably polyvinyl carbazole or a derivative thereof, polydecane or a derivative thereof, or a polyoxyalkylene derivative having an aromatic amine in a side chain or a main chain. Low molecular When the material is transported by the hole, it is preferably dispersed in a polymer binder for use.

電洞輸送層的成膜方法並無特別限制。使用低分子電洞輸送材料時,可列舉從含有高分子黏合劑與電洞輸送材料之混合液進行成膜,高分子電洞輸送材料中,可列舉出從含有電洞輸送材料之溶液進行成膜者。 The film formation method of the hole transport layer is not particularly limited. When a low molecular hole transport material is used, a film mixture is formed from a mixed solution containing a polymer binder and a hole transport material, and the polymer hole transport material may be formed from a solution containing a hole transport material. Membrane.

從溶液所進行之成膜中所用的溶劑,只要是可溶解電洞輸送材料者即可,並無特別限制,例如可列舉出三氯甲烷、二氯甲烷、二氯乙烷等之氯系溶劑;四氫呋喃等之醚系溶劑;甲苯、二甲苯等之芳香族烴系溶劑;丙酮、丁酮等之酮系溶劑;乙酸乙酯、乙酸丁酯、乙基賽珞蘇乙酸酯等之酯系溶劑;以及此等之混合物等。 The solvent to be used for the film formation from the solution is not particularly limited as long as it can dissolve the hole transporting material, and examples thereof include a chlorine solvent such as chloroform, dichloromethane or dichloroethane. An ether solvent such as tetrahydrofuran; an aromatic hydrocarbon solvent such as toluene or xylene; a ketone solvent such as acetone or methyl ethyl ketone; and an ester system such as ethyl acetate, butyl acetate or ethyl cyproterone acetate. Solvent; and mixtures of these, and the like.

作為從溶液所進行之成膜方法,可列舉出與前述電洞注入層的成膜法相同之塗佈法。從長壽命化之觀點來看,較佳係在與前述鄰接層形成步驟相同之環境中進行成膜。 As a film formation method by a solution, the coating method similar to the film formation method of the said cavity injection layer is mentioned. From the viewpoint of long life, it is preferred to form a film in the same environment as the above-described adjacent layer forming step.

所混合之高分子黏合劑,較佳為不會極度阻礙電荷輸送者。此外,可適當使用對可見光之吸收較弱之高分子黏合劑。作為高分子黏合劑,例如可列舉出聚碳酸酯、聚丙烯酸酯、聚丙烯酸甲酯、聚甲基丙烯酸甲酯、聚苯乙烯、聚氯乙烯、聚矽氧烷等。 The polymer binder to be mixed is preferably one which does not extremely impede charge transport. Further, a polymer binder which is weak in absorption of visible light can be suitably used. Examples of the polymer binder include polycarbonate, polyacrylate, polymethyl acrylate, polymethyl methacrylate, polystyrene, polyvinyl chloride, polyoxyalkylene, and the like.

電洞輸送層的膜厚,可考量所要求之特性及成膜工序的簡易度等來適當地設定,例如為1nm至1μm,較佳為2nm至500nm,更佳為5nm至200nm。 The film thickness of the hole transport layer can be appropriately set in consideration of the required characteristics and the ease of the film forming step, and is, for example, 1 nm to 1 μm, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.

<發光層> <Light Emitting Layer>

發光層,通常以含有發出螢光及/或磷光之有機物為主。發光層更可含有輔助該有機物之摻雜劑。摻雜劑係例如用以提升發光效率或是改變發光波長而添加。構成發光層之有機物,可為低分子化合物或高分子化合物,當藉由塗佈法來形成發光層時,發光層較佳係含有高分子化合物。構成發光層之高分子化合物之經聚苯乙烯換算的數量平均分子量,例如可為約103至108。構成發光層之發光材料,例如可列舉出下列色素系材料、金屬錯合物系材料、高分子系材料、及摻雜材料。 The luminescent layer is usually composed of organic substances containing fluorescing and/or phosphorescence. The luminescent layer may further contain a dopant that assists the organic material. The dopant is added, for example, to increase the luminous efficiency or to change the wavelength of the emission. The organic substance constituting the light-emitting layer may be a low molecular compound or a high molecular compound. When the light emitting layer is formed by a coating method, the light emitting layer preferably contains a polymer compound. The polystyrene-equivalent number average molecular weight of the polymer compound constituting the light-emitting layer may be, for example, about 10 3 to 10 8 . Examples of the light-emitting material constituting the light-emitting layer include the following pigment materials, metal complex materials, polymer materials, and dopant materials.

(色素系材料) (pigmented material)

色素系材料,例如可列舉出環戊胺衍生物、四苯基丁二烯衍生物化合物、三苯基胺衍生物、二唑衍生物、吡唑喹啉衍生物、二苯乙烯苯衍生物、二苯乙烯伸芳基衍生物、吡咯衍生物、噻吩環化合物、吡啶環化合物、芘酮(perinone)衍生物、苝衍生物、低聚噻吩衍生物、二唑二聚體、吡唑啉二聚體、喹吖啶酮衍生物、及香豆素衍生物等。 Examples of the pigment-based material include a cyclopentylamine derivative, a tetraphenylbutadiene derivative compound, and a triphenylamine derivative. Diazole derivatives, pyrazoloquinoline derivatives, stilbene benzene derivatives, stilbene extended aryl derivatives, pyrrole derivatives, thiophene ring compounds, pyridine ring compounds, perinone derivatives, hydrazine derivatives Substance, oligothiophene derivative, An oxadiazole dimer, a pyrazoline dimer, a quinacridone derivative, and a coumarin derivative.

(金屬錯合物系材料) (metal complex material)

金屬錯合物系材料,例如可列舉出:具有稀土類金屬(例如Tb、Eu、Dy、Al)、Zn、Be、Ir、Pt等之中心金屬,以及二唑、噻二唑、苯基吡啶、苯基苯并咪唑、喹啉結構等的配位基之金屬錯合物等。該金屬錯合物,例如可列舉出銦錯合物、鉑錯合物等之具有來自三重態激發狀態的發光之金屬錯合物、鋁喹啉錯合物、苯喹啉鈹錯合物、苯 並唑鋅錯合物、苯並噻唑鋅錯合物、偶氮甲基鋅錯合物、卟啉錯合物、菲羅林銪錯合物等。 The metal complex-based material may, for example, be a central metal having a rare earth metal (for example, Tb, Eu, Dy, Al), Zn, Be, Ir, Pt, or the like, and A metal complex of a ligand such as an oxadiazole, a thiadiazole, a phenylpyridine, a phenylbenzimidazole or a quinoline structure. Examples of the metal complex include a metal complex having a light emission from a triplet state, such as an indium complex or a platinum complex, an aluminum quinoline complex, and a quinolinol complex. Benzo An azole zinc complex, a benzothiazole zinc complex, an azomethyl zinc complex, a porphyrin complex, a phenanthroline complex, and the like.

(高分子系材料) (polymer material)

高分子系材料,例如可列舉出聚對伸苯伸乙烯衍生物、聚噻吩衍生物、聚對伸苯衍生物、聚矽烷衍生物、聚乙炔衍生物、聚茀衍生物、聚乙烯咔唑衍生物、將上述色素系材料或金屬錯合物系材料予以高分子化之材料等。 Examples of the polymer material include polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polydecane derivatives, polyacetylene derivatives, polyfluorene derivatives, and polyvinylcarbazole derivatives. A material or a material obtained by polymerizing the above-mentioned pigment-based material or metal-based compound material.

發光層的厚度通常約為2nm至200nm。 The thickness of the light-emitting layer is usually about 2 nm to 200 nm.

<電子輸送層> <Electronic transport layer>

構成電子輸送層之電子輸送材料,可使用一般所知的材料,例如可列舉出二唑衍生物、蒽醌二甲烷或其衍生物、苯醌或其衍生物、萘醌或其衍生物、蒽醌或其衍生物、四氰蒽醌二甲烷或其衍生物、茀酮或其衍生物、二苯基二氰基乙烯或其衍生物、二苯醌或其衍生物、8-羥基喹啉或其衍生物的金屬錯合物、聚喹啉或其衍生物、聚喹喔啉或其衍生物、聚茀或其衍生物等。 As the electron transporting material constituting the electron transporting layer, generally known materials can be used, and for example, An oxadiazole derivative, quinodimethane or a derivative thereof, benzoquinone or a derivative thereof, naphthoquinone or a derivative thereof, hydrazine or a derivative thereof, tetracyanoquinodimethane or a derivative thereof, anthrone or its a derivative, a diphenyldicyanoethylene or a derivative thereof, a diphenylguanidine or a derivative thereof, a metal complex of 8-hydroxyquinoline or a derivative thereof, a polyquinoline or a derivative thereof, a polyquinoxaline Or a derivative thereof, polyfluorene or a derivative thereof, and the like.

電子輸送層的膜厚,可考量所要求之特性或成膜步驟的容易度等來適當地設定,例如為1nm至1μm,較佳為2nm至500nm,更佳為5nm至200nm。 The film thickness of the electron transport layer can be appropriately set in consideration of desired characteristics or easiness of the film formation step, and the like, for example, is 1 nm to 1 μm, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.

<電子注入層> <electron injection layer>

構成電子注入層之電子注入材料,可因應發光層的種類來適當地選擇,電子注入層材料例如可列舉出鹼金屬;鹼土類金屬;含有鹼金屬及鹼土類金屬中的1種以上之合金;鹼金屬或鹼土類金屬的氧化物、鹵化物及碳酸鹽;以 及前述物質的混合物等。前述鹼金屬及其氧化物、鹵化物及碳酸鹽的例子,可列舉出鋰、鈉、鉀、銣、銫、氧化鋰、氟化鋰、氧化鈉、氟化鈉、氧化鉀、氟化鉀、氧化銣、氟化銣、氧化銫、氟化銫、碳酸鋰等。此外,前述鹼土類金屬及其氧化物、鹵化物及碳酸鹽的例子,可列舉出鎂、鈣、鋇、鍶、氧化鎂、氟化鎂、氧化鈣、氟化鈣、氧化鋇、氟化鋇、氧化鍶、氟化鍶、碳酸鎂等。電子注入層可具有積層2層以上之積層構造,例如可列舉出LiF/Ca等。 The electron injecting material constituting the electron injecting layer can be appropriately selected depending on the type of the light emitting layer, and examples of the electron injecting layer material include an alkali metal; an alkaline earth metal; and an alloy containing at least one of an alkali metal and an alkaline earth metal; An oxide, a halide or a carbonate of an alkali or alkaline earth metal; And a mixture of the foregoing substances and the like. Examples of the alkali metal and its oxides, halides, and carbonates include lithium, sodium, potassium, rubidium, cesium, lithium oxide, lithium fluoride, sodium oxide, sodium fluoride, potassium oxide, and potassium fluoride. Antimony oxide, antimony fluoride, antimony oxide, antimony fluoride, lithium carbonate, and the like. Further, examples of the alkaline earth metal and its oxides, halides and carbonates include magnesium, calcium, barium, strontium, magnesium oxide, magnesium fluoride, calcium oxide, calcium fluoride, barium oxide, and barium fluoride. , cerium oxide, cerium fluoride, magnesium carbonate, and the like. The electron injecting layer may have a laminated structure in which two or more layers are laminated, and examples thereof include LiF/Ca and the like.

電子注入層的膜厚較佳為1nm至1μm。 The film thickness of the electron injecting layer is preferably from 1 nm to 1 μm.

各有機薄膜層的形成方法,例如可列舉出噴嘴印刷法、噴墨印刷法、凸版印刷法、凹版印刷法等之塗佈法,以及真空蒸鍍法等。 Examples of the method for forming each of the organic thin film layers include a coating method such as a nozzle printing method, an inkjet printing method, a relief printing method, and a gravure printing method, and a vacuum vapor deposition method.

又,塗佈法中,係將含有成為各有機薄膜層之有機EL材料的油墨予以塗佈成膜,並藉由將此固化而形成有機薄膜層。塗佈法中所使用之油墨的溶劑,例如可列舉出三氯甲烷、二氯甲烷、二氯乙烷等之氯系溶劑;四氫呋喃等之醚系溶劑;甲苯、二甲苯等之芳香族烴系溶劑;丙酮、丁酮等之酮系溶劑;乙酸乙酯、乙酸丁酯、乙基溶纖劑乙酸酯等之酯系溶劑;及水等。 Further, in the coating method, an ink containing an organic EL material serving as each organic thin film layer is applied to a film, and the organic thin film layer is formed by curing. Examples of the solvent of the ink used in the coating method include a chlorine-based solvent such as chloroform, dichloromethane or dichloroethane; an ether solvent such as tetrahydrofuran; and an aromatic hydrocarbon such as toluene or xylene. Solvent; ketone solvent such as acetone or methyl ethyl ketone; ester solvent such as ethyl acetate, butyl acetate or ethyl cellosolve acetate; and water.

在製作彩色有機EL裝置時,例如針對各色彩改變電洞注入層的膜厚,可得到針對各色彩為最適之微凹孔效果。 When a color organic EL device is produced, for example, the film thickness of the hole injection layer is changed for each color, and the effect of the micro-cavity which is optimal for each color can be obtained.

第9圖為顯示在將可得到第8圖所示之光激發光(PL)光譜(峰值波長517nm)的綠色發光材料用在發 光層之有機EL元件中,對改變電洞注入層的膜厚時之EL光譜進行模擬之圖。該模擬中,將有機EL元件的構成設為「陽極/電洞注入層/電洞輸送層/發光層/陰極」,將陽極的構成設為ITO\APC\ITO=7nm\18nm\110nm,陰極的構成設為NaF\Al=2nm\1500nm,發光層的膜厚設為100nm,電洞輸送層的膜厚設為20nm,並計算往垂直於支撐基板2之方向發射之光的EL光譜。 Fig. 9 is a view showing the use of a green luminescent material which can obtain the photoexcitation light (PL) spectrum (peak wavelength 517 nm) shown in Fig. 8 In the organic EL device of the optical layer, the EL spectrum when the film thickness of the hole injection layer was changed was simulated. In the simulation, the configuration of the organic EL element is referred to as "anode/hole injection layer/hole transport layer/light-emitting layer/cathode", and the structure of the anode is ITO\APC\ITO=7 nm\18 nm\110 nm, cathode The structure was set to NaF\Al=2 nm\1500 nm, the film thickness of the light-emitting layer was set to 100 nm, and the film thickness of the hole transport layer was set to 20 nm, and the EL spectrum of light emitted in a direction perpendicular to the support substrate 2 was calculated.

例如當電洞注入層的膜厚為40nm時,為峰值波長526nm、CIE色度座標x=0.216、y=0.731。電洞注入層的膜厚為50nm時,為峰值波長542nm、CIE色度座標x=0.273、y=0.697。此等2種發光色可明確地辨識為不同色彩。 For example, when the film thickness of the hole injection layer is 40 nm, the peak wavelength is 526 nm, and the CIE chromaticity coordinates x = 0.216 and y = 0.731. When the film thickness of the hole injection layer was 50 nm, the peak wavelength was 542 nm, and the CIE chromaticity coordinates x=0.273 and y=0.697. These two illuminating colors can be clearly recognized as different colors.

如此,即使電洞輸送層的膜厚僅改變10nm,原先發光材料本身的光譜亦產生極大改變。此係由於微凹孔效應,在視角一定的條件下被選擇性地強制規定之光波長區,因電洞輸送層膜厚的不同而改變之故。當然,由電洞輸送層的膜厚不均之有機EL元件所構成之顯示裝置,因膜厚的不均導致顯示畫面的色斑,而使產品良率降低。 Thus, even if the film thickness of the hole transport layer is changed by only 10 nm, the spectrum of the original luminescent material itself is greatly changed. This is due to the micro-recave effect, and the wavelength region of the light that is selectively forced under a certain viewing angle is changed due to the difference in film thickness of the hole transport layer. Of course, in a display device comprising an organic EL element having a film thickness unevenness in the hole transport layer, the unevenness of the film thickness causes a stain on the display screen, and the product yield is lowered.

根據本發明之製造方法,可形成適當之電洞輸送層膜厚的微凹孔構造,而可製造出期望色度的有機EL元件。 According to the production method of the present invention, a micropore structure having a film thickness of a suitable hole transporting layer can be formed, and an organic EL element having a desired chromaticity can be produced.

實施例 Example

首先準備TFT基板,該TFT基板形成有: 由從接近支撐基板側依序積層膜厚7nm的ITO層、膜厚18nm的APC層、膜厚110nm的ITO層之積層膜所構成之第1電極6(參考第3A圖)。第3A圖中,係省略ITO層與APC層之交界,並顯示積層膜全體作為第1電極6。 First, a TFT substrate is prepared, and the TFT substrate is formed with: The first electrode 6 composed of an ITO layer having a thickness of 7 nm, an APC layer having a thickness of 18 nm, and an ITO layer having a thickness of 110 nm was formed in this order from the side of the support substrate (see FIG. 3A). In the third drawing, the boundary between the ITO layer and the APC layer is omitted, and the entire laminated film is shown as the first electrode 6.

接著將撥液劑2(Daikin公司製 撥液劑OPTOACE(註冊商標)HP系列)混合於負型感光性樹脂組成物溶液(Zeon Japan股份有限公司製ZPN2464)中,調製出含有撥液劑之感光性樹脂組成物。撥液劑相對於扣除撥液劑後之感光性樹脂組成物的全體固體成分之固體成分濃度比{(撥液劑/扣除撥液劑後之感光性樹脂組成物的全體固體成分)×100}設為0.2%(重量%)。接著藉由旋轉塗佈機將含有撥液劑之感光性樹脂組成物塗佈於所準備之TFT基板的表面上,接著在加熱板上以110℃加熱90秒,藉此進行預烘烤處理。藉由該預烘烤處理,使感光性樹脂組成物的溶劑蒸發,而形成區隔壁形成用膜(參考第3B圖)。 Then, the liquid-repellent 2 (Daikin's liquid-repellent OPTOACE (registered trademark) HP series) was mixed in a negative photosensitive resin composition solution (ZPN 2464, manufactured by Zeon Japan Co., Ltd.) to prepare a photosensitive agent containing a liquid-repellent agent. Resin composition. The solid content concentration ratio of the liquid-repellent agent to the total solid content of the photosensitive resin composition after the liquid-repellent-removing agent is removed ((liquid-repellent agent/total solid content of the photosensitive resin composition after deducting the liquid-repellent agent) × 100} Set to 0.2% by weight. Then, a photosensitive resin composition containing a liquid-repellent agent was applied onto the surface of the prepared TFT substrate by a spin coater, followed by heating at 110 ° C for 90 seconds on a hot plate, thereby performing a prebaking treatment. By this prebaking treatment, the solvent of the photosensitive resin composition is evaporated to form a film for forming a partition wall (refer to FIG. 3B).

接著使用近接式曝光機,透過既定的遮罩以曝光量100mJ/cm2使區隔壁形成用膜曝光(參考第3C圖)。然後在110℃加熱60秒,藉此進行曝光後烘烤(PEB),使用顯影液(Tokuyama股份有限公司製SD-1(TMAH 2.38wt%))進行100秒的顯影。 Next, using a proximity exposure machine, the film for forming a partition wall was exposed through a predetermined mask at an exposure amount of 100 mJ/cm 2 (refer to FIG. 3C). Then, after heating at 110 ° C for 60 seconds, post-exposure baking (PEB) was carried out, and development was carried out for 100 seconds using a developing solution (SD-1 (TMAH 2.38 wt%) manufactured by Tokuyama Co., Ltd.).

接著在230℃下加熱30分鐘間作為後烘烤,使樹脂硬化而形成順錐狀的區隔壁(參考第4A圖)。區隔壁的膜厚設為0.6μm。區隔壁頂面與純水之接觸角為75°,區隔壁頂面與苯甲醚之接觸角為39°。此外,第1電極的表面與純水 之接觸角為25°。又,當形成為區隔壁的膜厚為1.0μm時,係形成反錐狀的區隔壁。本實施例中,係使用順錐狀的區隔壁,但亦可使用反錐狀的區隔壁。 Subsequently, it was heated at 230 ° C for 30 minutes as a post-baking, and the resin was hardened to form a tapered partition wall (refer to FIG. 4A). The film thickness of the partition wall was set to 0.6 μm. The contact angle between the top surface of the partition wall and pure water is 75°, and the contact angle of the top surface of the partition wall with anisole is 39°. In addition, the surface of the first electrode and pure water The contact angle is 25°. Further, when the film thickness formed as the partition wall is 1.0 μm, a partition wall having a reverse tapered shape is formed. In the present embodiment, a tapered partition wall is used, but a reverse tapered partition wall may be used.

接著形成作為第1有機薄膜層之電洞注入層。以純水將與區隔壁的顯影所使用者為相同之顯影液(Tokuyama股份有限公司製SD-1(TMAH 2.38wt%))稀釋為0.5wt%,洗淨基板表面。藉由該洗淨,使第1電極的表面與純水之接觸角降低至5°以下,可賦予至第1電極(ITO薄膜)表面充分的潤濕性。此時區隔壁頂面與苯甲醚之接觸角為35°。然後使用噴墨裝置(ULVAC公司製Litlex 142P),將油墨(固體成分濃度1.5重量%的聚(乙烯二氧噻吩)(PEDOT)/聚苯乙烯磺酸(PPS)水分散液(Bayer公司製AI4083))塗佈於各凹部(參考第4C圖)。由於區隔壁3顯示出撥液性,所以不會溢出至相鄰的凹部,可將油墨容納於由區隔壁3所包圍之區域(凹部5)內。油墨在第1電極上不會被局部地撥開而能夠均一地保持在第1電極上。藉由在200℃下燒結該基板,來形成均一膜厚的電洞注入層(參考第5A圖)。 Next, a hole injection layer as a first organic thin film layer is formed. The developing solution (SD-1 (TMAH 2.38 wt%) manufactured by Tokuyama Co., Ltd.), which is the same as the developer of the partition wall, was diluted to 0.5 wt% with pure water, and the surface of the substrate was washed. By this washing, the contact angle of the surface of the first electrode with pure water is lowered to 5 or less, and sufficient wettability to the surface of the first electrode (ITO film) can be imparted. At this time, the contact angle of the top surface of the partition wall with anisole was 35°. Then, using an inkjet apparatus (Litlex 142P manufactured by ULVAC Co., Ltd.), an ink (poly(ethylene dioxythiophene) (PEDOT) / polystyrene sulfonic acid (PPS) aqueous dispersion having a solid concentration of 1.5% by weight (AI4083 manufactured by Bayer Co., Ltd.) )) is applied to each recess (refer to Figure 4C). Since the partition wall 3 exhibits liquid repellency, it does not overflow to the adjacent recess, and the ink can be accommodated in the region (recess 5) surrounded by the partition wall 3. The ink is not partially removed on the first electrode and can be uniformly held on the first electrode. A hole injection layer having a uniform film thickness was formed by sintering the substrate at 200 ° C (refer to FIG. 5A).

接著形成電洞輸送層作為第2有機薄膜層9。以成為0.28重量%的比率之方式,將高分子電洞輸送化合物混合於環己基苯與4-甲基-苯甲醚(別名4-甲氧基-甲苯)的組成比(重量)8:2的混合溶劑中,得到電洞輸送層形成用油墨。使用噴墨裝置(ULVAC公司製Litlex 142P),將前述電洞輸送層形成用油墨塗佈於既定的凹部內,得到膜厚 20nm的塗膜。將設置有該塗膜之基板,在氮氣環境中以190℃加熱60分鐘,使塗膜不溶化後,自然冷卻制室溫,而得電洞輸送層(電洞輸送層在第5圖中省略)。 Next, a hole transport layer is formed as the second organic thin film layer 9. The composition ratio (weight) of the polymer hole transporting compound to cyclohexylbenzene and 4-methyl-anisole (alias 4-methoxy-toluene) was 8:2 in a ratio of 0.28% by weight. In the mixed solvent, an ink for forming a hole transport layer was obtained. The ink for forming a hole transport layer was applied to a predetermined concave portion by using an inkjet device (Litlex 142P manufactured by ULVAC Co., Ltd.) to obtain a film thickness. 20 nm coating film. The substrate provided with the coating film was heated at 190 ° C for 60 minutes in a nitrogen atmosphere to insolubilize the coating film, and then naturally cooled to room temperature to obtain a hole transport layer (the hole transport layer is omitted in FIG. 5) .

然後形成3種發光層。首先將發射紅色光之高分子發光材料1混合於有機溶劑以使該濃度成為0.8wt%的方式,而調製出紅油墨。同樣的,將發射綠色光之高分子發光材料2混合於有機溶劑以使該濃度成為0.8wt%的方式,而調製出綠油墨。將發射藍色光之高分子發光材料2混合於有機溶劑以使該濃度成為0.8wt%的方式,而調製出藍油墨。分別使用噴墨裝置(ULVAC公司製Litlex 142P),將此等紅、綠、藍油墨塗佈於既定的凹部內。由於油墨被接觸角較大之區隔壁的頂面所撥開,所以可防止傳達至該頂面而溢出至鄰近區域,而將油墨容納於凹部內。藉由在130℃下燒結該基板,來形成均一膜厚的發光層(參考第5C圖)。 Then three kinds of light-emitting layers are formed. First, the red light-emitting polymer light-emitting material 1 was mixed with an organic solvent so that the concentration became 0.8% by weight to prepare a red ink. Similarly, the green light-emitting material 2 was mixed with an organic solvent so that the concentration became 0.8% by weight to prepare a green ink. The blue light-emitting polymer 2 was mixed with an organic solvent to have a concentration of 0.8% by weight to prepare a blue ink. Each of the red, green, and blue inks was applied to a predetermined concave portion by using an inkjet device (Litlex 142P manufactured by ULVAC Co., Ltd.). Since the ink is separated by the top surface of the partition wall of the region having a large contact angle, it is prevented from being transmitted to the top surface and overflowing to the adjacent region, and the ink is accommodated in the concave portion. A light-emitting layer having a uniform film thickness was formed by sintering the substrate at 130 ° C (refer to FIG. 5C).

接著藉由真空蒸鍍法,依序積層NaF層(2nm)、Mg層(2nm)、Al層(1500nm)、Ag層(100nm)來形成第2電極(陰極)。然後貼合封裝基板並封裝有機EL元件,而製作出顯示裝置。 Next, a second electrode (cathode) was formed by sequentially depositing a NaF layer (2 nm), a Mg layer (2 nm), an Al layer (1500 nm), and an Ag layer (100 nm) by a vacuum deposition method. Then, the package substrate was bonded and the organic EL element was packaged to fabricate a display device.

各有機EL元件的有機薄膜層,係因應各有機EL元件的種類,以下列第1表所示之膜厚來形成。 The organic thin film layer of each organic EL device is formed by the film thickness shown in the following Table 1 depending on the type of each organic EL device.

將以上述方式製作之各有機EL元件的EL光譜,與發光材料的光激發光(PL)光譜一同顯示於第10圖、第11圖、第12圖。第10圖顯示紅色有機EL元件的EL光譜及紅色發光材料的PL光譜,第11圖顯示綠色有機EL元件的EL光譜及綠色發光材料的PL光譜,第12圖顯示藍色有機EL元件的EL光譜及藍色發光材料的PL光譜。又,各發光材料的PL光譜,可測定出在玻璃基板上僅形成發光層之試樣的PL光譜而得到。EL光譜,可確認到由於微凹孔效應,較發光材料的PL光譜更尖銳化,且峰值波長移位。 The EL spectrum of each of the organic EL elements produced in the above manner is shown in Fig. 10, Fig. 11, and Fig. 12 together with the photoexcitation light (PL) spectrum of the luminescent material. Fig. 10 shows an EL spectrum of a red organic EL element and a PL spectrum of a red luminescent material, Fig. 11 shows an EL spectrum of a green organic EL element and a PL spectrum of a green luminescent material, and Fig. 12 shows an EL spectrum of a blue organic EL element And the PL spectrum of the blue luminescent material. Further, the PL spectrum of each luminescent material can be obtained by measuring the PL spectrum of a sample in which only the luminescent layer is formed on the glass substrate. In the EL spectrum, it was confirmed that the PL spectrum of the luminescent material was sharper due to the micro-cavity effect, and the peak wavelength was shifted.

所得之有機EL元件的發光特性如下列第2表所示。如下列第2表所示,係確認可得到期望的色度座標值。 The luminescent properties of the obtained organic EL device are shown in Table 2 below. As shown in the second table below, it is confirmed that the desired chromaticity coordinate value can be obtained.

1‧‧‧顯示裝置 1‧‧‧ display device

2‧‧‧支撐基板 2‧‧‧Support substrate

3‧‧‧區隔壁 3‧‧‧ next door

3a‧‧‧區隔壁的端部 End of the next door to the 3a‧‧

4‧‧‧有機EL元件 4‧‧‧Organic EL components

5‧‧‧凹部 5‧‧‧ recess

6‧‧‧第1電極 6‧‧‧1st electrode

7‧‧‧第1有機薄膜層(電洞注入層) 7‧‧‧1st organic film layer (hole injection layer)

9‧‧‧第2有機薄膜層(發光層) 9‧‧‧2nd organic film layer (light-emitting layer)

10‧‧‧第2電極 10‧‧‧2nd electrode

Claims (3)

一種顯示裝置之製造方法,其係含有:支撐基板、劃分出該支撐基板上所預先設定的分隔區之區隔壁、以及分別設置在由該區隔壁所劃分之分隔區上之複數個有機電激發光元件;各有機電激發光元件從支撐基板側依序含有第1電極、有機薄膜層、及第2電極之顯示裝置之製造方法,其中含有:準備支撐基板之步驟,於該支撐基板上方係設置有:藉由微影技術使含有撥液劑之感光性樹脂組成物形成圖案而藉此形成之區隔壁、以及第1電極;藉由含有草酸、磷酸、乙酸、硝酸及鹽酸的至少任一種之溶液或是前述感光性樹脂組成物的顯影液,洗淨前述第1電極的表面之步驟;於前述第1電極上藉由塗佈法形成有機薄膜層之步驟;以及於前述有機薄膜層上形成第2電極之步驟。 A manufacturing method of a display device, comprising: a support substrate, a partition wall dividing a predetermined separation area on the support substrate, and a plurality of organic electric excitations respectively disposed on the separation area partitioned by the partition wall of the partition A method of manufacturing a display device including a first electrode, an organic thin film layer, and a second electrode in order from the support substrate side, wherein the organic light-emitting device includes a step of preparing a support substrate, and a top portion of the support substrate Provided is a partition wall formed by patterning a photosensitive resin composition containing a liquid repellent by a lithography technique, and a first electrode; and containing at least one of oxalic acid, phosphoric acid, acetic acid, nitric acid, and hydrochloric acid a solution of the photosensitive resin composition; a step of washing the surface of the first electrode; a step of forming an organic thin film layer by a coating method on the first electrode; and a layer on the organic thin film layer The step of forming the second electrode. 如申請專利範圍第1項所述之顯示裝置之製造方法,其中,前述第1電極為氧化銦錫,前述溶液為磷酸與乙酸與硝酸之混合溶液。 The method of manufacturing a display device according to claim 1, wherein the first electrode is indium tin oxide, and the solution is a mixed solution of phosphoric acid and acetic acid and nitric acid. 如申請專利範圍第1項所述之顯示裝置之製造方法,其中,前述第1電極為氧化銦鋅,前述溶液為磷酸與乙酸與硝酸之混合溶液或草酸水溶液。 The method for producing a display device according to claim 1, wherein the first electrode is indium zinc oxide, and the solution is a mixed solution of phosphoric acid and acetic acid and nitric acid or an aqueous oxalic acid solution.
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