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TW201337920A - Resistive temperature sensors for improved asperity, head-media spacing, and/or head-media contact detection - Google Patents

Resistive temperature sensors for improved asperity, head-media spacing, and/or head-media contact detection Download PDF

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TW201337920A
TW201337920A TW101142875A TW101142875A TW201337920A TW 201337920 A TW201337920 A TW 201337920A TW 101142875 A TW101142875 A TW 101142875A TW 101142875 A TW101142875 A TW 101142875A TW 201337920 A TW201337920 A TW 201337920A
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Taiwan
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sensor
tcr
probe
resistance
wiring
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TW101142875A
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Chinese (zh)
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Manuel C Anaya-Dufresne
Brian W Karr
Gary J Kunkel
Zhen Wei
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Seagate Technology Llc
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Priority claimed from US13/298,712 external-priority patent/US9123381B2/en
Application filed by Seagate Technology Llc filed Critical Seagate Technology Llc
Publication of TW201337920A publication Critical patent/TW201337920A/en

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Abstract

A sensor supported by a head transducer has a temperature coefficient of resistance (TCR) and a sensor resistance. The sensor operates at a temperature above ambient and is responsive to changes in sensor-medium spacing. Conductive contacts connected to the sensor have a contact resistance and a cross-sectional area adjacent to the sensor larger than that of the sensor, such that the contact resistance is small relative to the sensor resistance and negligibly contributes to a signal generated by the sensor. A multiplicity of head transducers each support a TCR sensor and a power source can supply bias power to each sensor of each head to maintain each sensor at a fixed temperature above an ambient temperature in the presence of heat transfer changes impacting the sensors. A TCR sensor of a head transducer can include a track-oriented TCR sensor wire for sensing one or both of asperities of the medium.

Description

用於改善粗糙度,探頭至介質的間距,及/或探頭至介質的接觸偵測之電阻式溫度感測器 Resistive temperature sensor for improved roughness, probe-to-medium spacing, and/or probe-to-medium contact detection 相關專利文獻 Related patent documents

此申請案依照35U.S.C.§119(e)而主張2010年11月17日所申請的臨時專利申請案序號61/414,733及61/414,734二者之優先權的權益,且因此,該等申請案係以其各自的整體而結合於本文中供參考之用。 This application claims the priority of the provisional patent application number 61/414,733 and 61/414,734, filed on November 17, 2010, in accordance with 35 USC § 119(e), and therefore, such applications They are incorporated herein by reference in their entirety.

本發明係關於用於改善粗糙度,探頭至介質的間距,及/或探頭至介質的接觸偵測之電阻式溫度感測器之設備及方法。 The present invention relates to apparatus and methods for resistive temperature sensors for improving roughness, probe-to-medium spacing, and/or probe-to-medium contact detection.

本發明之實施例係針對包含探頭轉換器之設備,該探頭轉換器係組構要與磁性記錄介質相互作用。感測器係設置於探頭轉換器處,且具有電阻的溫度係數及感測器電阻。感測器係組構要操作於周圍溫度之上的溫度,且係回應於感測器與介質間之間距中的改變。導電接點係連接至感測器且具有接觸電阻。接點具有鄰接於感測器而大於感測器之橫剖面區域的橫剖面區域,以致使接觸電阻相對於感測器電阻而變小,且可忽略地促成藉由感測器所產生之信號。 Embodiments of the present invention are directed to an apparatus including a probe transducer that is to interact with a magnetic recording medium. The sensor is placed at the probe transducer and has a temperature coefficient of resistance and a sensor resistance. The sensor system is operative to operate at temperatures above ambient temperature and is responsive to changes in the distance between the sensor and the medium. The conductive contacts are connected to the sensor and have contact resistance. The contact has a cross-sectional area that is adjacent to the sensor and larger than the cross-sectional area of the sensor such that the contact resistance becomes smaller relative to the sensor resistance and negligibly contributes to the signal generated by the sensor .

實施例係針對方法,包含以磁性記錄介質相對於探頭轉換器而移動,使用具有電阻之溫度係數的感測器而感測 探頭轉換器之接近點的溫度。感測器係連接至具有接觸電阻的導電接點。接點具有鄰接於感測器而大於感測器之橫剖面區域的橫剖面區域,以致使接觸電阻相對於感測器之電阻而變小,且可忽略地促成藉由感測器所產生之信號。方法進一步包含輸出感測器信號,且使用感測器信號而偵測介質的粗糙度。 Embodiments are directed to a method comprising: moving a magnetic recording medium relative to a probe transducer, sensing using a sensor having a temperature coefficient of resistance The temperature at the point of proximity of the probe converter. The sensor is connected to a conductive contact having a contact resistance. The contact has a cross-sectional area that is adjacent to the sensor and larger than the cross-sectional area of the sensor such that the contact resistance becomes smaller relative to the resistance of the sensor and negligibly contributes to the generation by the sensor signal. The method further includes outputting the sensor signal and detecting the roughness of the medium using the sensor signal.

依據各式各樣的實施例,設備包含:複數個探頭轉換器,係組構要與磁性記錄介質相互作用;以及複數個感測器,具有電阻的溫度係數。至少一感測器係設置於各自探頭轉換器上,且係回應於感測器與介質間之間距中的改變。功率源係組構要供應偏壓功率至各自探頭轉換器的每一個感測器,且要調整偏壓功率而在影響感測器之熱轉移改變的存在中維持每一個感測器於周圍溫度之上的固定溫度處。 According to various embodiments, the apparatus includes: a plurality of probe transducers that are configured to interact with the magnetic recording medium; and a plurality of sensors having a temperature coefficient of resistance. At least one sensor is disposed on the respective probe transducer and is responsive to a change in the distance between the sensor and the medium. The power source architecture supplies bias power to each of the respective probe converters and adjusts the bias power to maintain each sensor at ambient temperature in the presence of thermal transfer changes that affect the sensor At a fixed temperature above.

在其他實施例中,方法包含以磁性記錄介質相對於複數個探頭轉換器而移動,使用具有電阻之溫度係數的感測器而感測探頭轉換器與介質間之間距中的改變。方法進一步包含供應偏壓功率至感測器,且調整偏壓功率而在影響感測器之熱轉移改變的存在中維持每一個感測器於周圍溫度之上的固定溫度處。 In other embodiments, the method includes moving the magnetic recording medium relative to the plurality of probe transducers, using a sensor having a temperature coefficient of resistance to sense a change in the distance between the probe transducer and the medium. The method further includes supplying a bias power to the sensor and adjusting the bias power to maintain each of the sensors at a fixed temperature above the ambient temperature in the presence of a change in thermal transfer affecting the sensor.

實施例係針對包含探頭轉換器之設備,該探頭轉換器係組構要與具有複數個軌跡之磁性記錄介質相互作用。設備亦包含感測器,該感測器具有電阻的溫度係數且係配置於探頭轉換器,使得感測器的縱軸係相對於軌跡而實質平 行地取向,感測器係回應於介質的粗糙度及感測器與介質間之間距中的改變之其中一者或二者。 Embodiments are directed to an apparatus including a probe transducer that is to interact with a magnetic recording medium having a plurality of tracks. The device also includes a sensor having a temperature coefficient of resistance and configured in the probe transducer such that the longitudinal axis of the sensor is substantially flat relative to the trajectory The row orientation, the sensor is responsive to one or both of the roughness of the medium and the change in the distance between the sensor and the medium.

在進一步實施例中,方法包含以磁性記錄介質相對於探頭轉換器而移動,使用具有電阻之溫度係數的感測器而感測介質的粗糙度及探頭轉換器與介質間之間距中的改變之其中一者或二者。感測器具有相對於軌跡而實質平行取向之縱軸。 In a further embodiment, the method includes moving the magnetic recording medium relative to the probe transducer, using a sensor having a temperature coefficient of resistance to sense the roughness of the medium and the change in the distance between the probe transducer and the medium One or both. The sensor has a longitudinal axis that is oriented substantially parallel with respect to the trajectory.

各式各樣實施例之該等及其他特性和觀點可鑑於下文之詳細說明及附圖,而予以瞭解。 These and other features and aspects of various embodiments will be apparent from the description and drawings.

資料儲存系統通常包含一或多個記錄探頭轉換器,而對磁性記錄介質讀取及寫入資訊。在記錄探頭轉換器與其相關聯的介質之間具有相對小的距離或間距一直係所欲的。此距離或間距係熟知為〝飛行高度〞或〝探頭至介質的間距〞。藉由減少探頭至介質的間距,記錄探頭轉換器能典型較佳地寫入資料至介質且自介質讀取資料。而且,減少探頭至介質的間距允許諸如用以偵測記錄介質表面的粗糙度和其他特性之用於記錄介質形勢的測量。 A data storage system typically includes one or more recording probe transducers that read and write information to the magnetic recording medium. It is always desirable to have a relatively small distance or spacing between the recording probe transducer and its associated medium. This distance or spacing is known as the flying height 〞 or the spacing of the probe to the medium. By reducing the pitch of the probe to the medium, the recording probe transducer can typically write data to and read data from the medium. Moreover, reducing the pitch of the probe to the medium allows measurements such as the roughness and other characteristics of the surface of the recording medium to be used to record the condition of the recording medium.

依據各式各樣的實施例,且請參閱第1至3圖,藉由懸架101所支撐之滑件100係顯示非常接近旋轉之磁性記錄介質160。滑件100支撐記錄探頭轉換器103及加熱器102,加熱器102係熱耦接至探頭轉換器103。加熱器102可係電阻式加熱器,而在當電流通過加熱器102時產生熱 量。加熱器102並未受限於電阻式加熱器,且可包含任何類型的加熱源。藉由加熱器102所產生之熱能致使探頭轉換器103的熱膨脹。此熱膨脹可在資料儲存系統中被使用以減少探頭至介質的間距107。請注意的是,在某些實施例中,可使用非熱致動器以減少探頭至介質的間距107。 In accordance with various embodiments, and with reference to Figures 1 through 3, the slider 100 supported by the suspension 101 is shown to be in close proximity to the rotating magnetic recording medium 160. The slider 100 supports the recording probe transducer 103 and the heater 102, which is thermally coupled to the probe transducer 103. The heater 102 can be a resistive heater and generate heat when current passes through the heater 102. the amount. Heater 102 is not limited to resistive heaters and may include any type of heat source. Thermal expansion of the probe transducer 103 is caused by thermal energy generated by the heater 102. This thermal expansion can be used in a data storage system to reduce the probe-to-medium spacing 107. It is noted that in certain embodiments, non-thermal actuators can be used to reduce the probe-to-medium spacing 107.

座落在探頭轉換器103上的電阻式溫度感測器105係顯示在接近點或靠近接近點處。較佳地,電阻式溫度感測器105係具有電阻之溫度係數(TCR)的感測器,且在此稱作TCR感測器105。如之前所說明地,探頭轉換器103的致動可藉由諸如加熱器102之熱致動器,或其他致動器(例如,寫入器)而予以實現。偏壓功率係施加至TCR感測器105,以提高探頭轉換器103之感測器105及鄰接部分的表面溫度成為實質高於磁性記錄介質160的溫度。 The resistive temperature sensor 105, located on the probe transducer 103, is shown at or near the approach point. Preferably, the resistive temperature sensor 105 is a sensor having a temperature coefficient of resistance (TCR) and is referred to herein as a TCR sensor 105. As explained previously, actuation of the probe transducer 103 can be accomplished by a thermal actuator such as heater 102, or other actuator (e.g., a writer). The bias power is applied to the TCR sensor 105 to increase the surface temperature of the sensor 105 and the abutting portion of the probe converter 103 to be substantially higher than the temperature of the magnetic recording medium 160.

較佳地,TCR感測器105係組構要感測熱流中的改變,用以偵測探頭至介質的接觸之開始。關於依據本發明各式各樣實施例之探頭至介質間距及接觸的決定之細節係提於2010年11月8日所申請之共同擁有的美國專利申請案序號12/941,461中,該申請案係結合於本文以供參考。 Preferably, the TCR sensor 105 is configured to sense changes in the heat flow for detecting the beginning of contact of the probe to the medium. The details of the determination of the probe-to-medium spacing and contact in accordance with various embodiments of the present invention are disclosed in co-owned U.S. Patent Application Serial No. 12/941,461, filed on Nov. 8, 2010. It is incorporated herein by reference.

如第3圖中所描繪地,在探頭至介質的接觸之前,具有被界定於熱的探頭表面與相對冷的碟片160之間的空氣間隙107。探頭轉換器103、空氣間隙107、及磁性記錄碟片160界定熱轉移速率之一位準。當探頭轉換器103係在諸如熱致動器或加熱器102的致動之後與碟片160接觸時,則探頭轉換器103與碟片160之高的熱傳導性材料間 之直接接觸可大大地增加熱轉移速率。因此,在探頭轉換器103上之TCR感測器105感測溫度的掉落或溫度軌道的幅度,而允許探頭至介質接觸之偵測。 As depicted in FIG. 3, there is an air gap 107 defined between the hot probe surface and the relatively cold disc 160 prior to the probe-to-medium contact. Probe transducer 103, air gap 107, and magnetic recording disc 160 define one of the levels of thermal transfer rate. When the probe transducer 103 is in contact with the disc 160 after actuation, such as by a thermal actuator or heater 102, then between the probe transducer 103 and the high thermal conductivity material of the disc 160 Direct contact can greatly increase the rate of heat transfer. Thus, the TCR sensor 105 on the probe transducer 103 senses the drop in temperature or the amplitude of the temperature track, allowing probe-to-medium contact detection.

第4A圖描繪在探頭轉換器103與磁性記錄碟片160之表面間的接觸之前、之期間、及之後,用於第1至3圖中所示類型之記錄探頭轉換器103的代表性溫度輪廓。在此非限制之描繪性實例中,由於解說之目的的緣故,溫度輪廓係表示成為穩態DC信號。當探頭轉換器103係藉由熱致動器102所致動時,則探頭轉換器表面溫度將由於熱致動器102所產生之熱量而隨著致動增加。探頭轉換器溫度將比碟片160的溫度更高。因此,在此設想情況中,碟片160扮演散熱器的角色。當探頭轉換器103接觸碟片160時,則由於接觸所導致之熱轉移速率中的改變,探頭轉換器表面溫度將掉落。由於熱致動器加熱及摩擦加熱,探頭轉換器表面溫度將持續增加。在溫度中之改變或在溫度軌道中之幅度可被使用以表明探頭至介質的接觸。 Figure 4A depicts a representative temperature profile for the recording probe transducer 103 of the type shown in Figures 1 through 3 before, during, and after contact between the probe transducer 103 and the surface of the magnetic recording disk 160. . In this non-limiting illustrative example, the temperature profile is indicative of a steady state DC signal for the purpose of illustration. When the probe transducer 103 is actuated by the thermal actuator 102, the probe transducer surface temperature will increase with actuation due to the heat generated by the thermal actuator 102. The probe converter temperature will be higher than the temperature of the disc 160. Therefore, in this scenario, the disc 160 acts as a heat sink. When the probe transducer 103 contacts the disc 160, the probe transducer surface temperature will drop due to a change in the thermal transfer rate caused by the contact. Due to thermal actuator heating and friction heating, the surface temperature of the probe transducer will continue to increase. The change in temperature or the amplitude in the temperature track can be used to indicate the probe to medium contact.

第4B圖描繪用於藉由非熱致動器所致動之記錄探頭轉換器103的代表性溫度輪廓。在此描繪性實例中,TCR感測器偏壓功率自行加熱TCR感測器105,而致使探頭對碟片介面處之溫度增加成實質高於碟片160的溫度。在此設想情況中,碟片160扮演散熱器的角色。將探頭轉換器103係向下朝向碟片160而被致動時,則熱轉移速率逐漸增加,而致使感測器105的溫度逐漸減少。當探頭轉換器103變成與碟片160接觸時,則在熱轉移速率中將有改變 ,而造成探頭轉換器表面溫度之幅度。在探頭轉換器表面上的TCR感測器105測量此溫度幅度,而偵測探頭至介質的接觸。若造成探頭至介質的接觸之致動將進一步發生時,則由於摩擦加熱,溫度將最終地增加。 Figure 4B depicts a representative temperature profile for a recording probe transducer 103 that is actuated by a non-thermal actuator. In this illustrative example, the TCR sensor bias power self-heats the TCR sensor 105, causing the probe to increase the temperature at the disc interface to a temperature substantially higher than the temperature of the disc 160. In this scenario, the disc 160 acts as a heat sink. When the probe transducer 103 is actuated downward toward the disk 160, the heat transfer rate is gradually increased, causing the temperature of the sensor 105 to gradually decrease. When the probe transducer 103 becomes in contact with the disc 160, there will be a change in the thermal transfer rate. , which causes the amplitude of the surface temperature of the probe converter. The TCR sensor 105 on the surface of the probe transducer measures this temperature amplitude and detects the contact of the probe to the medium. If the actuation of the probe-to-medium contact will occur further, the temperature will eventually increase due to frictional heating.

在以下說明中,將參考電阻佈線的溫度係數以說明依據各式各樣實施例之合適的電阻式溫度感測器之實施例。應瞭解的是,〝佈線〞之用語係針對解說的目的而使用於此,且並未限制電阻式溫度感測器或感測器元件為佈線結構。其他的TCR結構及感測器組態亦可予以想像。 In the following description, the temperature coefficient of the resistance wiring will be referred to to illustrate an embodiment of a suitable resistive temperature sensor in accordance with various embodiments. It should be understood that the term "wire" is used herein for the purpose of illustration and does not limit the resistive temperature sensor or sensor element to a wiring structure. Other TCR configurations and sensor configurations can also be imagined.

現請翻閱第5圖,描繪有依據各式各樣實施例之感測探頭至介質的間距改變及接觸事件之各式各樣的處理。透過探頭轉換器相對於磁性記錄介質而移動140,在第5A圖中所描繪的方法包含使用連接至低電阻接點之電阻式溫度感測器,而感測142探頭轉換器的接近點之溫度。而且,該方法包含輸出144感測器信號,該感測器信號並未受到藉由接點所促成之信號的成分所混淆。各式各樣的處理可使用感測器信號而予以執行,包含偵測146介質的粗糙度、測量147探頭至介質的間距改變、及偵測148探頭至介質的接觸。 Referring now to Figure 5, there is depicted a wide variety of processes for sensing probe-to-medium spacing changes and contact events in accordance with various embodiments. Moving 140 through the probe transducer relative to the magnetic recording medium, the method depicted in FIG. 5A includes sensing the temperature of the proximity point of the probe 142 using a resistive temperature sensor coupled to the low resistance contact. . Moreover, the method includes outputting 144 a sensor signal that is not confused by the components of the signal facilitated by the contacts. A wide variety of processing can be performed using the sensor signals, including detecting the roughness of the medium 146, measuring the change in the pitch of the probe 147 to the medium, and detecting the contact of the probe 148 to the medium.

當驅使電阻式溫度感測器的TCR佈線變熱時(例如,在周圍溫度之上,且特別地,在相關聯之磁性記錄介質的溫度之上),則藉由佈線所產生之熱量的一部分將從鄰接的導電接點消失。典型地,習知之實施具有相對高的電阻於鄰接至熱的感測器之接點中。因而,在TCR佈線之 隔壁的接點亦最後促成所測量之信號,且使〝有效感測器〞大於所設計之TCR佈線感測器的幾何形狀。 When the TCR wiring that drives the resistive temperature sensor heats up (eg, above ambient temperature, and in particular above the temperature of the associated magnetic recording medium), then a portion of the heat generated by the wiring Will disappear from the adjacent conductive contacts. Typically, conventional implementations have a relatively high electrical resistance in the junction of the sensor adjacent to the heat. Thus, in the TCR wiring The junction of the next wall also ultimately contributes to the measured signal, and the 〝 effective sensor 〞 is greater than the geometry of the designed TCR wiring sensor.

此具有若干問題,包含但未受限於下文。TCR感測器的有效尺寸係大於所欲。在粗糙度偵測的情況中,無法準確地顯示出小於TCR之有效長度的粗糙度尺寸之特徵。因為接點的電阻亦促成所測量之電阻改變,所以無法設定真正的僅TCR佈線/感測器過熱比OHR。此將隨著設計而改變,除非接點的電阻或接點所暴露至之溫度係可忽略。最後,相對於小的TCR佈線,大的接點將具有大大不同的頻率回應。若接點亦促成所測量之信號時,則該等接點將污染TCR佈線本身之所測量的回應。 This has several issues, including but not limited to the following. The effective size of the TCR sensor is greater than desired. In the case of roughness detection, the characteristics of the roughness size smaller than the effective length of the TCR cannot be accurately displayed. Since the resistance of the contact also contributes to the measured change in resistance, it is not possible to set a true TCR-only wiring/sensor overheating ratio OHR. This will vary from design to design, unless the resistance of the contacts or the temperature to which the contacts are exposed is negligible. Finally, large contacts will have greatly different frequency responses relative to small TCR wiring. If the contacts also contribute to the measured signal, then the contacts will contaminate the measured response of the TCR wiring itself.

通常,驅使TCR佈線感測器變熱,亦即,將足夠的電性偏壓安置在TCR佈線上以加熱其至其周圍環境之上,係所欲的。然後,感測器信號則藉由測量由於電阻元件式感測器的熱轉移改變所導致之溫度中的改變而獲得。因為材料具有電阻的溫度係數,所以溫度中的改變造成感測器之電阻中的改變。下文之方程式(1)顯示的是,針對給定的TCR(α 0),TCR佈線之電阻如何隨著溫度而改變: Typically, the TCR wiring sensor is driven to heat up, i.e., a sufficient electrical bias is placed over the TCR wiring to heat it to its surroundings, as desired. The sensor signal is then obtained by measuring a change in temperature due to a change in thermal transfer of the resistive element sensor. Because the material has a temperature coefficient of electrical resistance, a change in temperature causes a change in the resistance of the sensor. Equation (1) below shows how the resistance of the TCR wiring changes with temperature for a given TCR ( α 0 ):

理想地,僅測量由於TCR感測器本身之溫度改變所導致之電阻改變係所欲的。然而,TCR感測器係附著至探頭轉換器中之導電接點以及亦具有電阻之探頭轉換器外部 的引線。下文之方程式(2)顯示所測量之電阻如何包含所感興趣,亦即,將被測量之TCR佈線電阻,且亦包含接點電阻(亦即,在探頭轉換器中之可暴露至來自TCR感測器或來自加熱器元件的溫度之電阻),及引線電阻(亦即,探頭外部之未暴露至TCR感測器溫度或加熱器溫度的電阻)。 Ideally, only the change in resistance due to temperature changes in the TCR sensor itself is measured. However, the TCR sensor is attached to the conductive contacts in the probe converter and also external to the probe converter that also has resistance Leads. Equation (2) below shows how the measured resistance contains interest, that is, the TCR wiring resistance to be measured, and also includes the contact resistance (ie, it can be exposed to the TCR sensing in the probe converter). The resistance of the device or the temperature from the heater element, and the lead resistance (ie, the resistance outside the probe that is not exposed to the TCR sensor temperature or heater temperature).

在下文之方程式(2)中,書寫在下面的第一個符號M、W、C、及L分別表示測量、佈線、接點、及引線之電阻。書寫在下面的第二個符號H及C則分別表示熱及冷佈線電阻測量。 In the following equation (2), the first symbols M, W, C, and L written below represent the resistances of the measurement, wiring, contacts, and leads, respectively. The second symbols H and C, written below, represent the thermal and cold wiring resistance measurements, respectively.

R M,H =R W,H +R C,H +R L,H R M,C =R W,C +R C,C +R L,C 方程式(2) R M , H = R W , H + R C , H + R L , H R M , C = R W , C + R C , C + R L , C equation (2)

下文之方式程式(3)顯示TCR佈線OHR如何根據測量之電阻及接點電阻而定。下文之方程式(4)使用上文之方程式(1)以取代接點之熱電阻的溫度差異及TCR。在此,係忽略恆定且小的引線電阻。 The following program (3) shows how the TCR wiring OHR depends on the measured resistance and contact resistance. Equation (4) below uses equation (1) above to replace the temperature difference and TCR of the junction's thermal resistance. Here, a constant and small lead resistance is ignored.

可發現的是,佈線OHR(或TCR感測器信號)相依於接點所暴露至之溫度(THTC)、接點之TCR(α C)、及接點之冷電阻(RC,C)。考慮要減少所暴露至來自TCR感測器的溫度之接點的電阻係所欲的。當該電阻處於零時,則由於接點之OHR(或TCR感測器信號)的部分變成 零。 It can be found that the wiring OHR (or TCR sensor signal) depends on the temperature (T H T C ) to which the contact is exposed, the TCR ( α C ) of the contact, and the cold resistance (R C, of the contact) . C ). Consider a resistor that is desirable to reduce the contact exposed to the temperature from the TCR sensor. When the resistor is at zero, then the portion of the OHR (or TCR sensor signal) of the junction becomes zero.

現請參閱第6A及6B圖,顯示有習知之電阻式溫度感測器200的有限元素分析模型,該分析模型顯示跨越TCR佈線202及其導電接點204之熱TCR佈線電壓/電阻(第6A圖)及溫度輪廓(第6B圖)。第6A及6B圖顯示當佈線至接點系統係運轉於150毫伏(mV)的偏壓時(230毫瓦(mW))之跨越一佈線設計的電壓/電阻及對應的溫度輪廓。第6A及6B圖係打算要顯示跨越習知之TCR佈線202及其接點204的電壓/電阻及溫度輪廓。此特殊的TCR佈線202具有大約34歐姆的電阻,且在直接鄰接於TCR佈線202之其中可看到電壓輪廓的二接點204(大約佈線之跨越軌跡寬度)中之電阻係18歐姆。在150毫伏之偏壓時,平均TCR佈線溫度係100℃。在鄰接於TCR佈線202之具有18歐姆電阻的接點204區域中之平均溫度係90℃。在此情況中之探頭轉換器的周圍溫度係76℃。 Referring now to Figures 6A and 6B, there is shown a finite element analysis model of a conventional resistive temperature sensor 200 that displays thermal TCR wiring voltage/resistance across the TCR wiring 202 and its conductive contacts 204 (6A) Figure) and temperature profile (Fig. 6B). Figures 6A and 6B show the voltage/resistance and corresponding temperature profile across a wiring design when the wiring to contact system is operating at 150 millivolts (mV) of bias (230 milliwatts (mW)). 6A and 6B are intended to show voltage/resistance and temperature profiles across conventional TCR wiring 202 and its contacts 204. This particular TCR wiring 202 has a resistance of approximately 34 ohms and a resistance of 18 ohms in the two contacts 204 (approximately the crossing track width of the wiring) directly adjacent to the TCR wiring 202 where the voltage profile can be seen. At a bias of 150 millivolts, the average TCR wiring temperature is 100 °C. The average temperature in the region of the contact 204 having an 18 ohm resistance adjacent to the TCR wiring 202 is 90 °C. The ambient temperature of the probe transducer in this case is 76 °C.

下文之方程式(5)顯示在鄰接於TCR佈線202之給定的接點電阻時之鄰接於TCR佈線202的接點溫度中之改變如何影響測量的OHR。由於接點204的影響,佈線OHR係比測量的OHR更高17%。此外,下文之方程式(6)顯示來自接點204之電阻中的增量係TCR佈線202及接點204之電阻中的總增量之25%。因此,來自接點204之信號表示總TCR感測器信號的25%。 Equation (5) below shows how the change in junction temperature adjacent to the TCR wiring 202 at a given contact resistance adjacent to the TCR wiring 202 affects the measured OHR. Due to the influence of the contacts 204, the wiring OHR is 17% higher than the measured OHR. In addition, Equation (6) below shows that the incremental from the resistance of the contact 204 is 25% of the total increment in the resistance of the TCR wiring 202 and the contact 204. Thus, the signal from contact 204 represents 25% of the total TCR sensor signal.

本發明之實施例係針對減少正好在熱TCR佈線感測器隔壁之非感測器接點電阻的實施,用於改良之僅感測器信號的產生。依據各式各樣之實施例,正好鄰接於熱TCR佈線之接點的區域係膨脹而有效率降下電阻,且因此,使來自接點的信號量變低。 Embodiments of the present invention are directed to reducing the implementation of non-sensor contact resistance just in the thermal TCR wiring sensor bulkhead for improved generation of only sensor signals. According to various embodiments, the region adjacent to the junction of the hot TCR wiring is expanded to effectively lower the resistance, and thus, the amount of signal from the contact is lowered.

在若干實施例中,係使用具有鄰接於感測器之極大橫剖面面積的接點,以降下該區域中之接點的電阻。TCR佈線的電阻係給定於下文之方程式(7)中。X之用語係電阻率,l係TCR佈線長度,以及Aw係橫剖面面積。依據方程式(7),增加橫剖面面積可減少TCR佈線或接點之剖面的電阻。 In several embodiments, a joint having a very large cross-sectional area adjacent to the sensor is used to lower the resistance of the joint in the region. The resistance of the TCR wiring is given in Equation (7) below. The terminology of X is the resistivity, the length of the TCR wiring, and the cross-sectional area of the A w system. According to equation (7), increasing the cross-sectional area reduces the resistance of the TCR wiring or junction profile.

第7圖顯示具有TCR佈線325及其鄰接接點327之習知TCR感測器301的描繪性實例。TCR佈線325之表 面及接點327係位於探頭轉換器的空氣軸承表面320上。傳統地,接點327具有TCR佈線325之相同的下行軌跡厚度及緩慢增加之進入滑件深度。第8圖顯示依據各式各樣實施例之具有低接點靈敏度TCR佈線感測器335的電阻式溫度感測器302之代表性實例,其中接點337的下行軌跡寬度及進入滑件深度係大大地增加,而導致接點337之電阻的減少。在第8圖中所示的實施例中,TCR感測器302包含前緣340及後緣350。TRC佈線325及接點327具有個別的前緣及後緣,而與TCR感測器302之前緣及後緣340及350相互平行地配向。TCR佈線335的前緣係相對於接點337的前緣而凹進。個別之TCR佈線335及接點337的相對配向和定位,以及該等元件的幾乎形狀可予以變化以獲得特定的粗糙度和探頭至介質的間距、及/或接觸偵測性能特徵。 FIG. 7 shows a descriptive example of a conventional TCR sensor 301 having a TCR wiring 325 and its adjacent contacts 327. Table of TCR wiring 325 The face and contacts 327 are located on the air bearing surface 320 of the probe transducer. Conventionally, contact 327 has the same downstream track thickness of TCR wiring 325 and a slowly increasing entry slider depth. Figure 8 shows a representative example of a resistive temperature sensor 302 having a low contact sensitivity TCR wiring sensor 335 in accordance with various embodiments, wherein the downstream track width of the contact 337 and the entry slider depth are This is greatly increased, resulting in a decrease in the resistance of the contact 337. In the embodiment shown in FIG. 8, the TCR sensor 302 includes a leading edge 340 and a trailing edge 350. The TRC wiring 325 and the contact 327 have individual leading and trailing edges that are aligned with the leading and trailing edges 340 and 350 of the TCR sensor 302 in parallel with each other. The leading edge of the TCR wiring 335 is recessed with respect to the leading edge of the contact 337. The relative alignment and positioning of the individual TCR wires 335 and contacts 337, as well as the approximate shape of the elements, can be varied to achieve specific roughness and probe to media spacing, and/or contact detection performance characteristics.

依據各式各樣的實施例,TCR感測器302係設置於探頭轉換器處,而探頭轉換器係組構要與磁性記錄介質相互作用。TCR感測器302具有感測器電阻,且係組構要操作於周圍溫度以上的溫度處。例如,TCR感測器302係回應於感測器302和介質之間的間距,與介質之粗糙不平的碰撞,及探頭至介質的接觸。導電接點337係連接至TCR感測器302,且具有接觸電阻。接點337具有鄰接於感測器302而大於感測器302之橫剖面區域的橫剖面區域,以致使接觸電阻相對於感測器電阻而變小,且可忽略地促成藉由TCR感測器302所產生之信號。較佳地,接點337 的電阻係相對於TCR感測器302的電阻而可忽略。 According to various embodiments, the TCR sensor 302 is disposed at the probe transducer and the probe transducer assembly is configured to interact with the magnetic recording medium. The TCR sensor 302 has sensor resistance and is configured to operate at temperatures above ambient temperature. For example, the TCR sensor 302 is responsive to the spacing between the sensor 302 and the media, the rough collision with the media, and the probe-to-media contact. Conductive contacts 337 are connected to TCR sensor 302 and have contact resistance. Contact 337 has a cross-sectional area that is adjacent to sensor 302 and larger than the cross-sectional area of sensor 302 such that the contact resistance becomes smaller relative to the sensor resistance and negligibly contributes to the TCR sensor 302 generated signal. Preferably, the contact 337 The resistance is negligible with respect to the resistance of the TCR sensor 302.

實施包含低電阻接點337之TCR感測器302可提供促成感測器信號之感測器302的有效尺寸成為與感測器302的實體尺寸實質地相同。具有低電阻接點337之TCR感測器302產生感測器信號,而該感測器信號並未受到藉由接點337所促成之該信號的成分所混淆。在若干實施例中,接點337之區域係暴露至藉由TCR感測器302及探頭轉換器之加熱器(未顯示)的其中一者或二者所產生之熱能。在此設想情況中,接點區域337之接觸電阻係相對於感測器電阻而變小,且可忽略地促成藉由TCR感測器302所產生之信號。 Implementing the TCR sensor 302 including the low resistance contact 337 can provide the effective size of the sensor 302 that contributes to the sensor signal to be substantially the same as the physical size of the sensor 302. The TCR sensor 302 with the low resistance contact 337 produces a sensor signal that is not confused by the components of the signal facilitated by the contact 337. In some embodiments, the area of the contacts 337 is exposed to thermal energy generated by one or both of the TCR sensor 302 and the heater (not shown) of the probe transducer. In this scenario, the contact resistance of the contact region 337 is reduced relative to the sensor resistance and negligibly contributes to the signal generated by the TCR sensor 302.

可瞭解的是,在各式各樣的實施例中,TCR感測器302的感測器元件335及接點337可界定單一TCR結構的不同區域。例如,TCR感測器302可具有相對末端,而TCR感測器元件335係設在其間。TCR感測器302之相對末端具有大於感測器元件335之橫剖面區域的橫剖面區域。在該等實施例中,接點337包含或包括感測器302之相對末端。 It can be appreciated that in various embodiments, the sensor elements 335 and contacts 337 of the TCR sensor 302 can define different regions of a single TCR structure. For example, the TCR sensor 302 can have opposite ends with the TCR sensor element 335 disposed therebetween. The opposite ends of the TCR sensor 302 have a cross-sectional area that is greater than the cross-sectional area of the sensor element 335. In these embodiments, the contacts 337 include or include opposite ends of the sensor 302.

依據各式各樣的實施例,接點337可具有鄰接於TCR感測器335的橫剖面區域,其係以範圍在1與1000之間的因子大於感測器335之該者。在各式各樣的實施例中,接觸電阻係以範圍在1與1000之間的因子小於感測器電阻。在各式各樣的實施例中,TCR感測器335係組構要操作於範圍在大約25與300℃之間的溫度處,而典型之操 作溫度約係100℃。在其他實施例中,TCR感測器335係組構要操作於範圍在大約0與300℃間之高於磁性記錄介質的周圍溫度及周遭環境之溫度處;典型地,範圍係在25與75℃之間。 In accordance with various embodiments, the contacts 337 can have a cross-sectional area adjacent to the TCR sensor 335 that is greater than the one of the sensors 335 by a factor ranging between 1 and 1000. In various embodiments, the contact resistance is less than the sensor resistance by a factor ranging between 1 and 1000. In various embodiments, the TCR sensor 335 is configured to operate at temperatures between about 25 and 300 ° C, while typical operations The temperature is about 100 ° C. In other embodiments, the TCR sensor 335 is configured to operate at a temperature between about 0 and 300 ° C above the ambient temperature of the magnetic recording medium and the ambient environment; typically, the range is between 25 and 75. Between °C.

在第7圖中,習知之TCR佈線感測器301係顯示具有狹窄的接點327。第8圖顯示依據本發明實施例之具有大的橫剖面區域接點337以大大地降下接觸電阻之TCR佈線感測器302。第8圖中所給定之特定的幾何形狀顯示一可能之實施,而應瞭解的是,可使用能增加相對於TCR佈線335的橫剖面區域之接點337的橫剖面區域之任何幾何形狀。有限元素分析模型可被使用以界定任何特殊之感測器設計的最佳幾何形狀。較佳地,TRC感測器302係位於或靠近探頭轉換器的接近點。在各式各樣的實施例中,TCR佈線335係定尺寸要感測磁性記錄介質的粗糙度。 In Fig. 7, a conventional TCR wiring sensor 301 is shown to have a narrow joint 327. Figure 8 shows a TCR wiring sensor 302 having a large cross-sectional area contact 337 to greatly reduce the contact resistance in accordance with an embodiment of the present invention. The particular geometry given in Figure 8 shows a possible implementation, and it should be understood that any geometry that increases the cross-sectional area of the contact 337 relative to the cross-sectional area of the TCR wiring 335 can be used. A finite element analysis model can be used to define the optimal geometry for any particular sensor design. Preferably, the TRC sensor 302 is located at or near the proximity of the probe transducer. In various embodiments, the TCR wiring 335 is sized to sense the roughness of the magnetic recording medium.

第9A及10A圖係第9B及10B圖所示之二TCR佈線感測器301及302以及其相關聯之接點327及337的相對電阻為橫跨軌跡位置之函數的概略圖式。第9A圖顯示具有具備相對小的橫剖面區域之接點327的習知TRC感測器301之橫跨軌跡的電阻輪廓。第10A圖顯示依據本發明實施例之具有具備相對大的橫剖面區域之低靈敏度TCR佈線接點的TRC感測器302之橫跨軌跡的電阻輪廓。 Figures 9A and 10A are schematic diagrams of the relative resistance of the two TCR wiring sensors 301 and 302 and their associated contacts 327 and 337 shown in Figures 9B and 10B as a function of track position. Figure 9A shows the resistance profile across the trajectory of a conventional TRC sensor 301 having a contact 327 having a relatively small cross-sectional area. Figure 10A shows a cross-sectional resistance profile of a TRC sensor 302 having a low sensitivity TCR wiring contact having a relatively large cross-sectional area in accordance with an embodiment of the present invention.

第9B圖之習知感測器的理論上之接觸電阻係自感測器電阻值單調地減少。第10B圖之TCR感測器302的低靈敏度接點之理論上的接觸電阻立即降下且比習知設計中 更迅速地減少更多。因此,來自接點337之信號係根據幾何形狀而大大地降低至0與40 dB之間,或更大。 The theoretical contact resistance of the conventional sensor of Figure 9B is monotonically reduced from the sensor resistance value. The theoretical contact resistance of the low sensitivity contact of the TCR sensor 302 of FIG. 10B is immediately lowered and is better than in a conventional design. Reduce more quickly. Thus, the signal from contact 337 is greatly reduced to between 0 and 40 dB, or greater, depending on the geometry.

通常,當使用熱TCR佈線感測器於固定的電性偏壓(亦即,固定的電流、功率、或電壓)時,則在粗糙度及接觸偵測信號中具有非常大的探頭至探頭之變異。該信號變異的一部分來自由於幾何形狀及跨越感測器和探頭轉換器之熱轉移改變所導致的TCR佈線之溫度的探頭至探頭之變異。此探頭對探頭之變異將造成來自探頭至探頭的固定偵測事件之信號振幅變異。 Typically, when using a hot TCR wiring sensor for a fixed electrical bias (ie, a fixed current, power, or voltage), there is a very large probe to probe in the roughness and contact detection signals. variation. Part of this signal variation comes from probe-to-probe variation due to geometry and temperature of the TCR wiring caused by thermal transfer changes across the sensor and probe transducers. This probe-to-probe variation will cause signal amplitude variations from the probe-to-probe fixed detection event.

第11圖係流程圖,顯示依據各式各樣實施例之用以在影響感測器之熱轉移的存在中維持跨越複數個探頭轉換器之複數個電阻式溫度感測器的各者於固定溫度之各式各樣的處理。透過探頭轉換器相對於磁性記錄介質而移動180,第11圖中所描繪之方法包含使用TCR佈線感測器以感測182探頭至介質之間距中的改變,而偏壓功率係供應183至TCR佈線感測器。方法亦包含調整184偏壓功率而在影響感測器之熱轉移改變的存在中維持各自感測器於周圍以上的固定溫度處。若探頭轉換器被熱致動186時,則方法進一步包含調整188偏壓功率而在影響感測器之熱轉移改變的存在中維持TCR佈線感測器於固定溫度處,該等熱轉移改變包含由於熱致動探頭轉換器所導致的該等者。 Figure 11 is a flow diagram showing the use of a plurality of resistive temperature sensors for maintaining a plurality of probe transducers in the presence of thermal transfer affecting the sensor in accordance with various embodiments. Various treatments of temperature. Moving 180 through the probe transducer relative to the magnetic recording medium, the method depicted in FIG. 11 includes using a TCR wiring sensor to sense a change in the 182 probe-to-media spacing, while the bias power is supplied 183 to the TCR Wiring sensor. The method also includes adjusting 184 bias power to maintain the respective sensors at a fixed temperature above the ambient in the presence of a change in thermal transfer affecting the sensor. If the probe transducer is thermally actuated 186, the method further includes adjusting 188 bias power to maintain the TCR wiring sensor at a fixed temperature in the presence of a change in thermal transfer affecting the sensor, the thermal transfer changes comprising These are due to the thermally actuated probe transducer.

第12A及12B圖顯示代表性多重探頭TCR佈線感測器之接觸偵測回應為佈線偏壓電流(第12A圖)及在相 同的偏壓範圍上之佈線OHR/溫度(第12B圖)的函數。在較熱溫度(較高偏壓或OHR)處,當TCR佈線感測器係在跨越探頭轉換器之固定的OHR/溫度運轉時,則跨越TCR佈線感測器之接觸偵測回應的信雜比回應(SNR)係更為一致。 Figures 12A and 12B show the contact detection response of a representative multi-probe TCR wiring sensor as the wiring bias current (Fig. 12A) and in phase The function of the wiring OHR/temperature (Fig. 12B) on the same bias range. At hotter temperatures (higher bias or OHR), when the TCR wiring sensor is operating across a fixed OHR/temperature across the probe transducer, the contact detection response across the TCR wiring sensor is mixed. More consistent than the response (SNR) system.

第13A及13B圖顯示在多重探頭轉換器上為代表性TCR佈線感測器粗糙度SNR資料。第13A及13B圖顯示代表性多重探頭TCR佈線感測器粗糙度偵測SNR資料為TCR佈線偏壓功率(第13A圖)及佈線感測器OHR/溫度(第13B圖)的函數。可發現到的是,當TCR佈線感測器係在跨越探頭轉換器之固定的OHR/溫度運轉時,則跨越TCR佈線感測器之粗糙度偵測回應係更為一致。 Figures 13A and 13B show representative TCR wiring sensor roughness SNR data on a multi-probe converter. Figures 13A and 13B show representative representative probe TCR wiring sensor roughness detection SNR data as a function of TCR wiring bias power (Figure 13A) and wiring sensor OHR/temperature (Figure 13B). It can be seen that when the TCR wiring sensor is operated at a fixed OHR/temperature across the probe transducer, the roughness detection response across the TCR wiring sensor is more consistent.

本發明之實施例係針對用以偏壓每一個TCR佈線感測器以提供固定溫度跨越探頭轉換器之所有的TCR佈線感測器之設備及方法。依據各式各樣的實施例,各自的TCR佈線感測器係運轉於固定溫度處,以消除由於跨越TCR佈線感測器之變化的溫度所導致之粗糙度及接觸偵測信號的探頭至探頭變異。TCR佈線感測器可被使用以藉由測量TCR佈線之電阻中的改變而測量溫度,其中TCR佈線之電阻中的改變係TCR佈線之溫度中的改變之函數,如下文之方程式(8)中所示: 在上文之方程式(8)中,Rw及Tw分別係熱電阻及溫度 ;R0及T0分別係冷電阻及溫度,以及α 0係TCR佈線之電阻的溫度係數。TCR,α 0,係材料性質,且因此,用於固定之TCR佈線溫度的OHR之值將隨著材料而改變。 Embodiments of the present invention are directed to apparatus and methods for biasing each TCR wiring sensor to provide a fixed temperature across all of the TCR wiring sensors of the probe transducer. According to various embodiments, the respective TCR wiring sensors operate at a fixed temperature to eliminate probe-to-probe roughness and contact detection signals due to varying temperatures across the TCR wiring sensor. variation. A TCR wiring sensor can be used to measure the temperature by measuring a change in the resistance of the TCR wiring, wherein the change in the resistance of the TCR wiring is a function of the change in the temperature of the TCR wiring, as in Equation (8) below Shown as follows: In the above equation (8), R w and T w are respectively a thermal resistance and a temperature; R 0 and T 0 are a cold resistance and a temperature, respectively, and a temperature coefficient of a resistance of the α 0- based TCR wiring. TCR, α 0 , is a material property, and therefore, the value of the OHR for the fixed TCR wiring temperature will vary with the material.

方程式(8)係線性化形式,且更高次項可存在於非標準之材料。此外,在此假定均勻的溫度和電阻跨越TCR佈線感測器。若TCR佈線及電阻並非均勻時,則僅只此方程式之小元素微分形式保持著,如下文之方程式(9)所示: 其中dR(x,y,z)及dT(x,y,z)係小的均勻元素之電阻及溫度。若跨越TCR佈線之溫度分佈或電阻改變時,則該微分方程式將必須以使用模型所建立之最大或平均的TCR佈線溫度,而在感測器及精確關係上予以整合。 Equation (8) is a linearized form, and higher order terms can exist in non-standard materials. Furthermore, it is assumed here that uniform temperature and resistance span the TCR wiring sensor. If the TCR wiring and resistance are not uniform, only the small element differential form of this equation is maintained, as shown in equation (9) below: Where dR (x, y, z) and dT (x, y, z) are the resistance and temperature of a small uniform element. If the temperature distribution or resistance across the TCR wiring changes, then the differential equation will have to be integrated in the sensor and the exact relationship using the maximum or average TCR wiring temperature established by the model.

在若干操作的設想情況中,藉由施加偏壓功率至佈線而將TCR佈線加熱至周圍溫度之上係有利的。第14圖顯示用於與來自Bruun的熱線風速儀;原理及信號回應,1995年之相似圖式一致的懸置於空氣中之佈線的描繪性熱轉移平衡實例。在此,明顯地,TCR佈線之溫度不僅相依於焦耳(Joule)加熱(I2R),而且根據來自TCR佈線之各式各樣模式的熱轉移。 In the envisaged case of several operations, it is advantageous to heat the TCR wiring above the ambient temperature by applying bias power to the wiring. Figure 14 shows an example of a descriptive thermal transfer balance for a wire suspended in air consistent with the hotline anemometer from Bruun; principle and signal response, similar to the 1995 pattern. Here, it is apparent that the temperature of the TCR wiring is not only dependent on Joule heating (I 2 R), but also in accordance with various modes of heat transfer from the TCR wiring.

因為在TCR佈線之溫度相依於焦耳加熱及來自該佈線的熱轉移,所以在TCR佈線之溫度並非以固定的佈線偏壓功率跨越不同的探頭而予以固定。因此,為了要運轉 每一個TCR佈線感測器於相同的溫度,必須調整偏壓功率使得過熱比OHR具有相同值(針對固定材料)。用於具有跨越感測器之均勻的溫度和電阻之設計,可使用下文之方程式(10): 針對具有大的溫度及/或電阻梯度之設計,嚴格地,函數形式僅保持於小的元素,如下文之方程式(11)所示: 應注意的是,使用該均勻方程式(上文之方程式(10))將產生可接受或可能無法接受的誤差。 Since the temperature of the TCR wiring is dependent on Joule heating and heat transfer from the wiring, the temperature of the TCR wiring is not fixed across a different probe with a fixed wiring bias power. Therefore, in order to operate each TCR wiring sensor at the same temperature, the bias power must be adjusted so that the overheating has the same value (for the fixed material) than the OHR. For designs with uniform temperature and resistance across the sensor, use equation (10) below: For designs with large temperature and/or resistance gradients, strictly speaking, the functional form is only kept at small elements, as shown in equation (11) below: It should be noted that using this uniform equation (Equation (10) above) will produce an acceptable or possibly unacceptable error.

第15圖顯示OHR對聚集的探頭轉換器(例如,五個探頭轉換器)之佈線偏壓功率的圖形。在第15圖中,各自探頭轉換器係在多重加熱器功率運轉(HP掃描),而OHR=Rw/R0-1。在此,TCR佈線之溫度來自佈線偏壓(橫軸)及加熱器(在固定佈線電流時增加OHR)二者。在固定的TCR佈線偏壓功率及加熱器功率時之跨越探頭轉換器的OHR中之變異可在第15圖中被立即發現,且可引起跨越探頭轉換器之TCR佈線溫度中的重大差異。 Figure 15 shows a graph of the wiring bias power of the OHR pair of clustered probe transducers (e.g., five probe transducers). In Figure 15, the respective probe converters are operated at multiple heater power (HP scan) and OHR = R w /R 0-1 . Here, the temperature of the TCR wiring comes from both the wiring bias (horizontal axis) and the heater (the OHR is increased when the wiring current is fixed). Variations in the OHR across the probe transducer at fixed TCR wiring bias power and heater power can be immediately found in Figure 15 and can cause significant differences in TCR wiring temperatures across the probe transducer.

注意的是,零加熱器功率情形係各自TCR佈線偏壓功率的最低點。例如,在345μW及零加熱器功率時之探頭轉換器S6Q0的OHR係大約0.2。在345μW及零加熱器功率時之探頭轉換器S2W0的OHR係大約0.09。也就是說,探頭轉換器S6Q0具有探頭轉換器S2W0之OHR 2.2倍的 OHR。此在不具有加熱器功率以供該等探頭轉換器之用的TCR佈線處變為73℃的溫差。 Note that the zero heater power situation is the lowest point of the respective TCR wiring bias power. For example, the OHR of the probe transducer S6Q0 at 345 μW and zero heater power is approximately 0.2. The OHR of the probe transducer S2W0 at 345 μW and zero heater power is approximately 0.09. In other words, the probe converter S6Q0 has 2.2 times the OHR of the probe converter S2W0. OHR. This becomes a temperature difference of 73 ° C at the TCR wiring that does not have heater power for the probe converters.

為了要獲得熱TCR感測器之一致的探頭至探頭之操作及可靠度,運轉各自TCR佈線感測器於固定的OHR處(例如,在第15圖中之水平線),而非在並不計算跨越探頭轉換器之TCR佈線感測器的熱轉移改變之固定的佈線偏壓功率(例如,在第15圖中之垂直線),或固定的佈線偏壓電流或電壓處,係所欲的。 In order to obtain consistent probe-to-probe operation and reliability of the thermal TCR sensor, operate the respective TCR wiring sensor at a fixed OHR (eg, in the horizontal line in Figure 15), rather than not calculating The thermal transfer of the TCR wiring sensor across the probe transducer changes the fixed wiring bias power (eg, the vertical line in Figure 15), or a fixed wiring bias current or voltage, as desired.

下文係假定均勻的TCR佈線溫度及電阻時之用以設定固定之OHR的方法之代表性實例(例如,請參閱上文之方程式(10)): The following is a representative example of a method for setting a fixed OCR for a uniform TCR wiring temperature and resistance (see, for example, equation (10) above):

實例1 Example 1

代表性之現場方法係給定如下:1.測量〝冷〞或周圍環境的TCR佈線電阻(R0),2.增加TCR佈線偏壓功率且同時測量增大的〝熱〞佈線電阻(Rw),3.使用上述之方程式(10)以計算OHR,4.使用給定所欲OHR之TCR佈線偏壓功率、或電流、或電壓。 Representative field methods are given as follows: 1. Measure the TCR wiring resistance (R 0 ) of the crucible or the surrounding environment, 2. Increase the TCR wiring bias power and simultaneously measure the increased 〞 〞 wiring resistance (R w 3. Use Equation (10) above to calculate the OHR, 4. Use the TCR wiring bias power, or current, or voltage for a given OHR.

實例2 Example 2

較簡易之內插或外推法係給定如下:1.在二(或更多)佈線偏壓功率處測量TCR佈線的 電阻,2.擬合一線至該資料,且決定Rw對佈線偏壓功率的斜率和截距,3.使用該截距當做R0,4.使用上述方程式(9)中之逆方程式以及所欲OHR、所計算之斜率、及所計算之截距,以解決操作TCR佈線功率。 The simpler interpolation or extrapolation method is given as follows: 1. Measure the resistance of the TCR wiring at two (or more) wiring bias powers, 2. Fit a line to the data, and determine the R w to the wiring. Slope and intercept of the pressure power, 3. Use the intercept as R 0 , 4. Use the inverse equation in equation (9) above and the desired OHR, the calculated slope, and the calculated intercept to resolve the operation. TCR wiring power.

然而,由於在低偏壓時的測量準確性,上文之實例1及2的代表性方法中之R0可具有大的誤差。例如,在100μA時,所測量的電阻具有大的變化(約2歐姆)。在此相同的系統上,要獲得較準確的電阻測量所需之加熱TCR佈線的電流係500μA。下文係用於以短的測試時間及低的R0誤差尋找用於固定OHR之偏壓的另一代表性方法。 However, R 0 in the representative methods of Examples 1 and 2 above may have a large error due to measurement accuracy at a low bias voltage. For example, at 100 μA, the measured resistance has a large change (about 2 ohms). On this same system, the current system of the heated TCR wiring required to obtain a more accurate resistance measurement is 500 μA. The following is another representative method for finding a bias voltage for a fixed OHR with a short test time and a low R 0 error.

實例3 Example 3

1.預偏壓掃描:以100μA的步階而自100μA掃描至目標電流(TC)之偏壓電流測量TCR佈線電阻,該TC係為獲得所欲之OHR所需之電流的最初計值。 1. Pre-biased scan: The TCR wiring resistance is measured in a 100 μA step from a 100 μA scan to a target current (TC), which is the initial value of the current required to obtain the desired OHR.

2.取得用於固定OHR之目標偏壓功率:繪製Rw對佈線偏壓功率的圖表,如第16圖中所示。注意的是,在低的偏壓時,因為不良的電阻測量準確性,所以曲線601並非直線的。可以以在TC、TC-100、TC-200之偏壓電流取得三點用於線性擬合603,而達成Rw=aP+b之方程式。在此,Rw係TCR佈線電阻,P係偏壓功率,a係斜率,以及b係截距 。因為功率係成比例於差量溫度(Tw-T0),所以可將前述之線性擬合方程式重寫為下文之方程式(12): 比較上文之方程式(10)與該線性擬合方程式Rw=aP+b顯示出斜率a係TCR的函數,且最後,截距b係在零偏壓之冷電阻。以下計算可被使用以獲得用於固定OHR的偏壓功率: 2. Obtain the target bias power for the fixed OHR: plot the Rw versus wiring bias power as shown in Figure 16. Note that at low bias voltages, curve 601 is not linear because of poor resistance measurement accuracy. Three points can be taken at a bias current of TC, TC-100, TC-200 for linear fitting 603 to achieve an equation of R w = aP + b. Here, R w is a TCR wiring resistance, a P-system bias power, a-system slope, and a b-intercept. Since the power system is proportional to the differential temperature (T w -T 0 ), the aforementioned linear fitting equation can be rewritten as equation (12) below: Comparing equation (10) above with the linear fit equation R w = aP + b shows a function of slope a, TCR, and finally, intercept b is at zero bias cold resistance. The following calculations can be used to obtain the bias power for the fixed OHR:

a)在固定OHR取得目標TCR佈線感測器電阻:Rw=b*(OHR+1) a) Obtain the target TCR wiring sensor resistance at fixed OHR: R w =b*(OHR+1)

b)將Rw代入上文之線性擬合方程式(12),以供藉由P=(Rw-b)/a所給定的目標偏壓功率之用。 b) Substituting R w into the linear fit equation (12) above for the target bias power given by P = (R w -b) / a.

3.根據運算可行性,轉換目標偏壓功率為偏壓電流或電壓。 3. According to the feasibility of the operation, the conversion target bias power is the bias current or voltage.

4.視需要地限制目標偏壓於諸如來自TCR佈線感測器壽命測試之電壓範圍的可靠度範圍內。 4. Optionally limit the target bias within a range of reliability such as the voltage range from the TCR wiring sensor life test.

請進入一步參閱第16圖,此圖式顯示用以設定固定OHR用於來自特殊晶圓之探頭轉換器的實例,以下之擬合方程式係藉其而獲得:R=127.803+0.092994*P。在此,斜率a=0.092994±0.000796,以及截距b=127.803±0.348。例如,若使用上述該等方法,固定OHR=0.3時,則應設定偏壓功率於P=412.294±2.406μW。 Please refer to Figure 16 for an example. This figure shows an example of setting a fixed OHR for a probe transducer from a special wafer. The following equation is obtained: R = 127.803 + 0.092994 * P. Here, the slope a=0.092994±0.000796, and the intercept b=127.803±0.348. For example, if the above method is used and the fixed OHR is 0.3, the bias power should be set at P = 412.294 ± 2.406 μW.

此外,設定跨越TCR佈線感測器之OHR亦可擴展至設定跨越諸如半徑/斜軸之系統中的其他參數之OHR。當使用多重熱源熱機械模型(MXTM)時,則可發現到跨越 斜軸之接觸偵測回應中的降下起因於當探頭轉換器係運轉於固定的TCR佈線偏壓功率時。而且,來自MXTM的結果已顯示出TCR佈線之電阻中的改變為跨越斜軸之加熱器功率的函數。所觀察到的是,OD(外徑)斜軸情形比ID(內徑)之斜軸情形偏差更多,而可認為具有相對大量的冷卻在OD處發生。在OD處之冷卻中的增量被觀察到變成比在ID處更高3倍。同樣地,在OD處之接觸偵測回應被觀察到變成ID之該者的3倍。若OHR係跨越斜軸而調整時,則可使跨越斜軸的靜態熱轉移更為一致。 In addition, setting the OHR across the TCR wiring sensor can also be extended to set the OHR across other parameters in the system such as radius/oblique axis. When using multiple heat source thermomechanical models (MXTM), you can find The drop in the contact detection response of the oblique axis results from when the probe converter is operating at a fixed TCR wiring bias power. Moreover, the results from the MXTM have shown that the change in the resistance of the TCR wiring is a function of the heater power across the oblique axis. It is observed that the OD (outer diameter) oblique axis case is more deviated than the ID (inner diameter) oblique axis case, and it can be considered that a relatively large amount of cooling occurs at the OD. The increment in cooling at the OD is observed to become three times higher than at the ID. Similarly, the contact detection response at the OD is observed to be three times that of the ID. If the OHR is adjusted across the oblique axis, the static heat transfer across the oblique axis can be made more consistent.

應注意的是,因為在轉換器中之多重熱源以及感測器及接點之不同的電阻率及TCR,所以上述之該等簡易方法可在當嘗試要固定恆定的溫度以供跨越所有探頭轉換器的TCR佈線感測器之用時,導致可理解的誤差。諸如以下之額外的實施可被使用以增進該技術: It should be noted that because of the multiple heat sources in the converter and the different resistivities and TCRs of the sensors and contacts, these simple methods described above can be used when trying to fix a constant temperature for conversion across all probes. The use of the TCR wiring sensor results in an understandable error. Additional implementations such as the following can be used to enhance the technology:

1.可將來自加熱器及/或周圍之溫度增量包含於計算中;亦即,測量由於TCR佈線偏壓及加熱器之電阻增量以設定固定的OHR。 1. The temperature increment from the heater and/or surrounding can be included in the calculation; that is, the fixed OHR is set due to the TCR wiring bias and the heater's resistance increment.

2.可根據系統如何改變而重計算且設定OHR;例如,跨越半徑或時間,若TCR佈線感測器回應隨著時間而衰變時。 2. The OHR can be recalculated and set according to how the system changes; for example, across a radius or time, if the TCR wiring sensor response decays over time.

3.若接點改變跨越正在使用該OHR以常態化之參數的電阻時,則必須計算接觸電阻中的改變。 3. If the junction changes across the resistance of the parameter that is being normalized using the OHR, then the change in contact resistance must be calculated.

4.可使用模型以瞭解非均勻的溫度及電阻梯度究竟改變所欲之溫度設定多少的準確度。 4. Models can be used to understand how non-uniform temperature and resistance gradients change the accuracy of the desired temperature setting.

依據各式各樣的實施例。更準確的OHR及一致的佈線溫度之設定方法包含使用模型以計算非均勻的感測器溫度、電阻、及來自探頭轉換器之溫度。第17A至17D圖顯示依據各式各樣實施例之估計TCR佈線感測器中之最大溫度的不同方式。如在該等圖式中可發現到的是,估計最大溫度的最準確方法係藉由監視TCR佈線中的OHR以及加熱器功率(請參閱第17D、17G、或17I圖)。為可靠度之目的,尤其對於DLC完整性,準確地估計最大功率係重要的。 According to various embodiments. A more accurate method of setting OHR and consistent wiring temperature involves using a model to calculate non-uniform sensor temperature, resistance, and temperature from the probe transducer. Figures 17A through 17D show different ways of estimating the maximum temperature in a TCR wiring sensor in accordance with various embodiments. As can be seen in these figures, the most accurate method of estimating the maximum temperature is by monitoring the OHR and heater power in the TCR wiring (see Figure 17D, 17G, or 17I). For reliability purposes, especially for DLC integrity, it is important to accurately estimate the maximum power.

第17A至17I圖顯示模型化的最大TCR佈線溫度對不同變數如下:第17A圖顯示最大TCR佈線溫度對佈線功率;第17B圖(及較大型式之第17E圖)顯示最大TCR佈線溫度對總過熱比(引線及佈線);第17C圖(及較大型式之第17F圖)顯示最大TCR佈線溫度對佈線過熱比;以及第17D圖(及較大型式之第17G圖)顯示最大TCR佈線溫度對佈線過熱比及寫入器加熱器功率。 Figures 17A through 17I show the modeled maximum TCR wiring temperature versus different variables as follows: Figure 17A shows the maximum TCR wiring temperature versus wiring power; Figure 17B (and larger pattern 17E) shows the maximum TCR wiring temperature versus total Overheat ratio (lead and wiring); Figure 17C (and Figure 17F of the larger version) shows the maximum TCR wiring temperature versus wiring overheat ratio; and Figure 17D (and larger version 17G) shows the maximum TCR wiring temperature The wiring overheat ratio and the writer heater power.

第17A至17G圖顯示藉由MXTM模型所預測的最大佈線溫度對不同輸入變數之回歸。使用MXTM模型之模型化係執於聚集的探頭上,該等探頭跨過包含TCR佈線感測器高度之最多製造參數分佈,以模擬現實所製造的探頭。因此,要接觸介質之必要的加熱器功率將探頭至探頭地變化。 Figures 17A through 17G show the regression of the maximum wiring temperature predicted by the MXTM model for different input variables. The modeling using the MXTM model is performed on a clustered probe that spans the maximum manufacturing parameter distribution including the height of the TCR wiring sensor to simulate a probe made in reality. Therefore, the necessary heater power to contact the medium changes the probe to the probe ground.

佈線的最大溫度係由於供能TCR佈線感測器及寫入器加熱器二者所導致。因而,較高飛行及/或較低效率的 探頭需要較大的加熱器功率以接觸介質,所以當跨越TCR佈線感測器之電壓係維持恆定時,可產生較大的最大佈線溫度。 The maximum temperature of the wiring is due to both the energized TCR wiring sensor and the writer heater. Thus, higher flight and/or lower efficiency The probe requires a large heater power to contact the medium, so a large maximum wiring temperature can be produced when the voltage across the TCR wiring sensor is maintained constant.

在第17A至17D圖中之回歸係以漸增之相關位準而排序,且指出要預測TCR佈線中之溫度的最佳方式係經由佈線中之OHR以及加熱器功率(第17D圖及較大型式之第17G圖,其係與第17I圖相同)。此結果伴隨TCR佈線接觸偵測SNR係與OHR更一致之事實指示的是,跨越探頭的SNR一致性係藉由設定跨越所有探頭之TCR佈線感測器溫度恆定而予以增進。 The regressions in Figures 17A through 17D are ordered with increasing correlation levels, and the best way to predict the temperature in the TCR wiring is via the OHR in the wiring and the heater power (Figure 17D and larger) Figure 17G, which is the same as Figure 17I). This result, along with the fact that the TCR wiring contact detection SNR is more consistent with the OHR, indicates that the SNR consistency across the probe is enhanced by setting the TCR wiring sensor temperature across all probes to be constant.

第17H及17I圖顯示模型化的最大佈線溫度如下:第17H圖顯示最大TCR佈線溫度對佈線電壓及加熱器功率;以及第17I圖顯示最大TCR佈線溫度對OHR及加熱器功率。在第17H圖中所示之模型化的最大佈線溫度對佈線電壓及加熱器功率的回歸指出,使用佈線電壓及加熱器功率之TCR佈線溫度預測係非常良好。然而,此佈線溫度預測並未如使用OHR及加熱器功率時(第17I圖)一樣地準確,如該兩方法之誤差的平方根(RMSE)所示,而大致相差5之因子。 Figures 17H and 17I show the modelled maximum wiring temperatures as follows: Figure 17H shows the maximum TCR wiring temperature versus wiring voltage and heater power; and Figure 17I shows the maximum TCR wiring temperature versus OHR and heater power. The regression of the modeled maximum wiring temperature shown in Fig. 17H with respect to the wiring voltage and the heater power indicates that the TCR wiring temperature prediction using the wiring voltage and the heater power is very good. However, this wiring temperature prediction is not as accurate as when using OHR and heater power (Fig. 17I), as indicated by the square root of the error of the two methods (RMSE), and is roughly a factor of 5.

來自參數計算值之另一重要的觀察在於,與佈線溫度對電壓相關聯之係數的符號係正值(第17H圖),而與佈線溫度對OHR相關聯之係數的符號係負值(第17I圖)。此指示的是,為了要獲得跨越所有部件之恆定的最大溫度,需使要接觸部件之較高功率被設定在比要接觸部件之 較低功率更高的OHR處。 Another important observation from the calculated value of the parameter is that the sign of the coefficient associated with the wiring temperature versus voltage is a positive value (Fig. 17H), and the sign of the coefficient associated with the wiring temperature for the OHR is negative (17I) Figure). This indicates that in order to obtain a constant maximum temperature across all components, the higher power of the component to be contacted is set to be greater than the component to be contacted. Lower power and higher OHR.

第18圖顯示對於不同的加熱器功率之模型化最大佈線溫度對OHR的圖表。針對第18圖中之表面上不合邏輯的資料圖表之理由起因於OHR亦係加熱器功率的函數之事實。也就是說,跨越TCR佈線感測器的溫度分佈隨著加熱器功率而改變。為了要在當加熱器功率增加時維持恆定的最大溫度,OHR之比例亦必須增加。例如,為了要在當加熱器功率自0 mW增加至30 mW到70 mW時獲得80℃之恆定的最大佈線溫度,OHR應自0.062增加至0.09至0.11%且佈線電壓需自125 mW降下至95 mW到52 mW。 Figure 18 shows a graph of the modeled maximum wiring temperature vs. OHR for different heater powers. The reason for the illogical data chart on the surface of Figure 18 is due to the fact that OHR is also a function of heater power. That is, the temperature distribution across the TCR wiring sensor changes with heater power. In order to maintain a constant maximum temperature as the heater power increases, the ratio of OHR must also increase. For example, to achieve a constant maximum wiring temperature of 80 °C when the heater power is increased from 0 mW to 30 mW to 70 mW, the OHR should be increased from 0.062 to 0.09 to 0.11% and the wiring voltage should be lowered from 125 mW to 95. mW to 52 mW.

用於粗糙度及探頭至介質接觸之偵測的習知TCR佈線感測器係以TCR佈線之長度在橫跨軌跡的方向中取向。而至少具有與此幾何形狀相關聯之三個問題。首先者,TCR佈線的橫跨軌跡長度界定最小橫跨軌跡寬度之粗糙度特徵。其係小於橫跨軌跡之佈線長度的粗糙度無法在橫跨軌跡的方向中被準確地特徵化。此將導致比必要更多的軌跡〝墊塞〞,且將造成驅動器容量之不必要的損失。在此文脈中之軌跡墊塞意指無法準確地顯示特徵之軌跡(或通常地,碟片),且因此,可潛在地包含粗糙度或其他的介質缺陷。軌跡或碟片表面之該等無法特徵化的區域係在記錄探頭轉換器之主動飛行的期間被回避,而導致降低之儲存容量。 Conventional TCR wiring sensors for roughness and probe-to-medium contact detection are oriented in a direction across the track with the length of the TCR wiring. There are at least three problems associated with this geometry. First, the cross-track length of the TCR routing defines a roughness profile that spans a minimum across the width of the track. The roughness, which is less than the length of the wiring across the track, cannot be accurately characterized in the direction across the track. This will result in more trajectory than necessary and will result in unnecessary loss of drive capacity. Trajectory padding in this context means that the trajectory of the feature (or, generally, the disc) cannot be accurately displayed, and thus, may include roughness or other media defects. Such uncharacteristic regions of the track or disc surface are evaded during active flight of the recording probe transducer, resulting in reduced storage capacity.

其次者,一旦偵測出粗糙度且予以特徵化時,則超過 粗糙度橫跨軌跡之寬度的更多軌跡被墊塞以計算探頭轉換器之功能性元件的橫跨軌跡寬度。因為習知的TCR佈線感測器係以橫跨軌跡之方向取向,所以要墊塞TCR佈線感測器所需之軌跡的數量係大於寫入器及讀取器所需之軌跡的數量。第三者,上文所討論之第一及第二個問題均認為針對TCR佈線之長度的有利方向係較短。然而,從感測器SNR的觀點來看,TCR佈線愈長則愈佳。因此,對於粗糙度/接觸之偵測及準確的粗糙度橫跨軌跡之特徵化二者,無法完全使TCR佈線感測器最佳化。 Second, once the roughness is detected and characterized, it exceeds More trajectories of roughness across the width of the track are padded to calculate the span trajectory width of the functional elements of the probe transducer. Because conventional TCR wiring sensors are oriented in a direction that traverses the track, the number of tracks required to plug the TCR wiring sensor is greater than the number of tracks required by the writer and reader. Third, the first and second issues discussed above all consider the advantageous direction for the length of the TCR wiring to be shorter. However, from the viewpoint of sensor SNR, the longer the TCR wiring is, the better. Therefore, for the detection of roughness/contact and the characterization of accurate roughness across the trajectory, the TCR wiring sensor cannot be fully optimized.

本發明之實施例係針對與軌跡平行而取向之TCR佈線感測器,其可提供增大的粗糙度解析度及減少的軌跡墊塞,以供驅動器容量的增加之用。依據各式各樣的實施例,與以橫跨軌跡方向取向之習知TCR佈線感測器相較地,TCR佈線感測器係與軌跡平行而取向。 Embodiments of the present invention are directed to TCR wiring sensors oriented parallel to the trajectory that provide increased roughness resolution and reduced track pad for increased drive capacity. According to various embodiments, the TCR wiring sensor is oriented parallel to the trajectory as compared to conventional TCR wiring sensors oriented in a cross-track direction.

第19圖係流程圖,顯示依據各式各樣實施例之用以使用具有相對於磁性記錄介質之軌跡而平行取向的縱軸之TCR佈線感測器以感測粗糙度、探頭至介質間距中的改變、及/或探頭至介質的接觸之各式各樣的處理。透過探頭轉換器相對於磁性記錄介質而移動702,在第19圖中所描繪的方法包含使用具有相對於介質之軌跡而平行取向的縱軸之TCR佈線感測器以感測704感測探頭至介質之間距中的改變。該方法亦包含使用TCR感測器以產生706感測器信號,例如,其可使用於各式各樣的目的,包含偵測712介質的粗糙度、測量710探頭至介質間距的改變、 及偵測714探頭至介質的接觸。 Figure 19 is a flow diagram showing the use of a TCR wiring sensor for sensing the roughness, probe to media spacing using a vertical axis having a parallel orientation with respect to the trajectory of the magnetic recording medium, in accordance with various embodiments. Various changes to the change, and / or probe to medium contact. Moving 702 through the probe transducer relative to the magnetic recording medium, the method depicted in FIG. 19 includes sensing the 704 sensing probe to the TCR wiring sensor using a longitudinal axis having a parallel orientation with respect to the trajectory of the medium. A change in the distance between the media. The method also includes using a TCR sensor to generate 706 sensor signals, for example, which can be used for a variety of purposes, including detecting the roughness of the 712 medium, measuring 710 probe-to-medium spacing changes, And detecting the contact of the 714 probe to the medium.

第20圖顯示包含連接至導電接點827之TCR佈線825的習知橫跨軌跡取向之TCR佈線感測器801的影像。可在第20圖中看到的是,於習知之TCR佈線感測器801中,TCR佈線825與接點827係大致地彼此互相平行。第21圖顯示依據本發明各式各樣實施例之軌跡平行式TCR佈線感測器802的影像。在第21圖中所示之TCR佈線感測器802包含具有軌跡平行之取向的TCR佈線835。如在第21圖中可發現到的是,TCR佈線835係連接至第一接點837’及第二接點837”。第一及第二接點837’及837”之各者係連接至TCR佈線835的相對末端,且形成大約90度的角度於其間。習知TCR佈線825係相對於其接點827而實質地平行;然而,依據各式各樣實施例之TCR佈線835係實質正交於其個別之接點837’及837”。 Figure 20 shows an image of a conventional cross-track oriented TCR wiring sensor 801 comprising a TCR wiring 825 connected to a conductive contact 827. As can be seen in Fig. 20, in the conventional TCR wiring sensor 801, the TCR wiring 825 and the contact 827 are substantially parallel to each other. Figure 21 shows an image of a trajectory-parallel TCR wiring sensor 802 in accordance with various embodiments of the present invention. The TCR wiring sensor 802 shown in Fig. 21 includes a TCR wiring 835 having an orientation in which tracks are parallel. As can be seen in Fig. 21, the TCR wiring 835 is connected to the first contact 837' and the second contact 837". Each of the first and second contacts 837' and 837" is connected to The opposite ends of the TCR wiring 835 are formed at an angle of approximately 90 degrees therebetween. Conventional TCR wiring 825 is substantially parallel with respect to its contact 827; however, TCR wiring 835 in accordance with various embodiments is substantially orthogonal to its individual contacts 837' and 837".

第20及21圖進一步顯示要確保TCR佈線825及835不在主動操作期間與粗糙度相互作用所需之墊塞的數量。用於各自TCR佈線825及835所需之墊塞的數量係藉由沿著頁面自個別的TCR佈線825及835之相對末端向下延伸的點線所表示。在第20及21圖中所示之點線內的區域之比較證明的是,與習知之橫跨軌跡取向的TCR佈線感測器801相較地,軌跡平行取向的TCR佈線感測器802提供所需墊塞數量中之實質的降低及儲存容量中之伴隨的增加。 Figures 20 and 21 further show the number of pads required to ensure that TCR wirings 825 and 835 do not interact with roughness during active operation. The number of pads required for the respective TCR wires 825 and 835 is indicated by dotted lines extending down the opposite ends of the individual TCR wires 825 and 835 along the page. A comparison of the regions within the dotted lines shown in Figures 20 and 21 demonstrates that the trajectory parallel oriented TCR wiring sensor 802 provides comparison to the conventional track-oriented TCR wiring sensor 801. A substantial decrease in the number of plugs required and an accompanying increase in storage capacity.

在第20圖中所示之習知TCR佈線感測器801的情況 中,此標準式感測器橫跨軌跡之長度係500奈米,以及下行軌跡之寬度係35奈米。在零斜軸處,此意指可被決定的最小橫跨軌跡之粗糙度寬度約係500奈米(亦即,有效的感測器橫跨軌跡之寬度約係500奈米)。當添加額外之大約500奈米以供墊塞之用時,習知TCR佈線感測器801之寬度意指各自粗糙度將需要被墊塞大約1微米於每一側。 The case of the conventional TCR wiring sensor 801 shown in Fig. 20. The standard sensor is 500 nm across the length of the track and the width of the down track is 35 nm. At the zero oblique axis, this means that the roughness width of the smallest trajectory that can be determined is about 500 nm (that is, the effective sensor spans the width of the track by about 500 nm). When an additional approx. 500 nm is added for padding, the width of the conventional TCR wiring sensor 801 means that the respective roughness will need to be padded about 1 micron on each side.

相反地,針對在相同情形下之TCR佈線感測器801的相同尺寸,依據本發明實施例之軌跡平行式TCR佈線感測器802(以及如第21圖中所示)可顯示粗糙度之特徵至大約35奈米,且將僅需額外之大約35微米的墊塞,而導致0.07微米的墊塞於每一側。在零斜角處,依據各式各樣實施例之軌跡平行式TCR佈線感測器802產生7%之習知橫跨軌跡TCR佈線感測器801的墊塞。此在墊塞中之大大的減少,及在驅動器容量中之伴隨的增加,係由於使粗糙度之真正的橫跨軌跡寬度及用於較窄感測器所需之降低數量的墊塞更準確地特徵化之緣故。 Conversely, for the same size of the TCR wiring sensor 801 in the same situation, the trajectory parallel TCR wiring sensor 802 (and as shown in FIG. 21) in accordance with an embodiment of the present invention can display the characteristics of roughness Up to about 35 nm, and only an additional 35 micron pad plug will be required, resulting in a 0.07 micron pad plug on each side. At zero bevel, the trajectory-parallel TCR wiring sensor 802 in accordance with various embodiments produces 7% of the conventional traversal traverse TCR wiring sensor 801 pad. This large reduction in the plug and the accompanying increase in drive capacity is due to the true cross-track width of the roughness and the reduced number of pads required for narrower sensors. The reason for the characterization.

在高斜角處,第21圖中所示之軌跡平行式TCR佈線感測器802的有效感測寬度增加如下之下一方程式(13):w eff =w+lsinα 方程式(13)在此,weff係TCR佈線感測器802之有效橫跨軌跡寬度,w係TCR佈線835之實體寬度,l係TCR佈線長度,以及α係斜角。然而,即使直至20度之斜角,軌跡平行式 TCR佈線感測器802的有效感測器橫跨軌跡寬度weff仍係極小於習知橫跨軌跡之TCR佈線感測器801的該者。 At the high bevel, the effective sense width of the trajectory parallel TCR wiring sensor 802 shown in Fig. 21 is increased by the following equation (13): w eff = w + lsinα Equation (13) Here, w eff is the effective cross-track width of the TCR wiring sensor 802, w is the physical width of the TCR wiring 835, l is the TCR wiring length, and the alpha system oblique angle. However, even with an oblique angle of up to 20 degrees, the effective sensor of the trajectory parallel TCR wiring sensor 802 is still much smaller than the trajectory width w eff of the TCR wiring sensor 801 of the conventional cross-track.

針對上述之實例,在20度時之軌跡平行式TCR佈線感測器802的有效感測器寬度weff係206奈米,其係具有相同尺寸及探頭取向之標準式橫跨軌跡TCR佈線感測器801之該者的44%。特定的墊塞保留將根據個別的感測器設計及操作斜軸而定。 For the above example, the effective sensor width w eff of the trajectory parallel TCR wiring sensor 802 at 20 degrees is 206 nm, which is a standard cross-track TCR wiring sensing with the same size and probe orientation. 44% of the one of the 801. The specific pad retention will depend on the individual sensor design and operating the skew axis.

以下係建構依據各式各樣實施例的軌跡平行式TCR佈線感測器802之不同的非限制方法: The following is a non-limiting method of constructing a trajectory-parallel TCR wiring sensor 802 in accordance with various embodiments:

1)蝕刻溝渠(例如,在SiO2或Al2O3中),且蝕刻阻斷層於下方之接點上。然後,使用鑲嵌電鍍處理以填充該溝渠。接著,沈積或電鍍頂部接點,且以電介質覆蓋,並化學機械研磨(CMP)。 1) Etching the trench (for example, in SiO 2 or Al 2 O 3 ) and etching the blocking layer on the underlying contact. Then, a damascene plating process is used to fill the trench. Next, the top contacts are deposited or plated and covered with a dielectric and chemical mechanical polishing (CMP).

2)再者,如上文之1)中一樣地蝕刻溝渠。然後,使用原子層沈積(ALD)處理以填充溝渠(此將係緩慢而不會沈積在溝渠的側壁上)。一些化學物可直接沈積在電介質上。在該等情況中,在沈積/電鍍頂部接點之前,將需要CMP。 2) Again, the trench is etched as in 1) above. An atomic layer deposition (ALD) process is then used to fill the trench (this will be slow without depositing on the sidewalls of the trench). Some chemicals can be deposited directly on the dielectric. In such cases, CMP will be required prior to deposition/plating of the top contacts.

3)產生大的步階而非溝渠。然後,使用諸如離子束沈積(IBD)之方向性沈積處理,且斜向(非法線入射)地沈積,並建立佈線於步階的側壁。接著,沈積電介質於溝渠的另一側,並CMP回到第一步階之頂部的金屬(此可被使用做為用於CMP之阻斷層)。然後,沈積頂部接點,且以電介質覆蓋,並CMP。 3) Produce large steps instead of ditches. Then, a directional deposition process such as ion beam deposition (IBD) is used, and is deposited obliquely (illegal line incidence), and sidewalls routed to the steps are established. Next, a dielectric is deposited on the other side of the trench and CMP is returned to the metal at the top of the first step (this can be used as a blocking layer for CMP). The top contact is then deposited and covered with a dielectric and CMP.

第22圖係依據各式各樣實施例之用以偵測粗糙度,探頭至介質的接觸,及探頭至介質的間距改變之設備900的圖式。應瞭解的是,為簡明之目的,在第22圖中所圖繪說明之設備900的若干組件並未被顯示出。第22圖中所示之設備900描繪各式各樣的組件,其可協力操作以實施本文所敘述之各式各樣的粗糙度、探頭至介質接觸、及探頭至介質間距改變之偵測方法。在此圖式中,控制系統902係顯示耦接至包含任何數目之硬碟驅動器904的主儲存裝置。 Figure 22 is a diagram of apparatus 900 for detecting roughness, probe-to-medium contact, and probe-to-medium spacing changes in accordance with various embodiments. It should be understood that, for the sake of brevity, several components of device 900 illustrated in FIG. 22 are not shown. Apparatus 900, shown in Fig. 22, depicts a wide variety of components that can be operated in concert to implement the various roughness, probe-to-medium contact, and probe-to-media spacing changes described herein. . In this illustration, control system 902 is shown coupled to a primary storage device containing any number of hard disk drives 904.

第22圖包含第1圖中所示之滑件100的再現,其支撐裝配有TCR感測器105之記錄探頭轉換器103,而與旋轉式磁性儲存介質160的表面間隔開。控制系統902係顯示包含控制器914、偵測器912、及電源供應器910。控制器914係組構要與設備900之各式各樣組件協力操作,而在諸如讀取及寫入操作之期間控制介質160的旋轉及滑件100的移動。 Fig. 22 includes a reproduction of the slider 100 shown in Fig. 1 supporting the recording probe transducer 103 equipped with the TCR sensor 105 spaced apart from the surface of the rotary magnetic storage medium 160. Control system 902 is shown to include controller 914, detector 912, and power supply 910. The controller 914 is configured to operate in conjunction with the various components of the device 900 to control the rotation of the media 160 and the movement of the slider 100 during such operations as reading and writing.

電源供應器910提供功率至設備900之各式各樣的組件。在各式各樣實施例的情況中,電源供應器910係組構要提供偏壓功率至TCR感測器105以及用於探頭轉換器之致動器的致動功率。例如,電源供應器910提供功率至操作成為探頭轉換器103之熱致動器的加熱器102。在上文中所敘述之各式各樣實施例的情況中,電源供應器910係組構要供應偏壓功率至複數個探頭轉換器103的每一個TCR感測器105,且要調整偏壓功率以在影響TCR感測器 105之熱轉移改變的存在中,維持每一個TCR感測器105於周圍溫度之上的固定溫度處。 Power supply 910 provides power to a wide variety of components of device 900. In the case of various embodiments, the power supply 910 is configured to provide bias power to the TCR sensor 105 and the actuation power of the actuator for the probe transducer. For example, power supply 910 provides power to heater 102 that operates as a thermal actuator of probe transducer 103. In the case of the various embodiments described above, the power supply 910 is configured to supply bias power to each of the plurality of probe converters 103, and to adjust the bias power. Influencing the TCR sensor In the presence of a thermal transfer change of 105, each TCR sensor 105 is maintained at a fixed temperature above the ambient temperature.

TCR感測器105係位於探頭轉換器105附近或在其接近點,且在此位置測量溫度。較佳地,TCR感測器105係具有電阻之溫度係數(TCR)的感測器。TCR感測器105可具有正TCR或負TCR。如前文所討論地,所測量之溫度回應於探頭轉換器103與磁性記錄介質160間之間距中的改變而變化。偵測器912係耦接至TCR感測器105,且係組構要偵測所測量之溫度之成分中的改變,而指示粗糙度、探頭至介質的接觸、及探頭至介質的間距改變之其中一者或多者。 The TCR sensor 105 is located near or near the probe transducer 105 and measures temperature at this location. Preferably, the TCR sensor 105 is a sensor having a temperature coefficient of resistance (TCR). The TCR sensor 105 can have a positive TCR or a negative TCR. As discussed above, the measured temperature changes in response to a change in the distance between the probe transducer 103 and the magnetic recording medium 160. The detector 912 is coupled to the TCR sensor 105, and the fabric is configured to detect changes in the measured temperature components, and to indicate roughness, probe-to-medium contact, and probe-to-medium spacing change. One or more of them.

依據各式各樣的實施例,TCR感測器105係配置於探頭轉換器103處,使得TCR感測器105之縱軸係相對於磁性記錄介質的軌跡而實質平行地取向。TCR感測器104係回應於TCR感測器105與介質160間之間距中的改變,且特別地,回應於介質160的粗糙度。在使用軌跡平行式TCR感測器104的實施例中,與習知之橫跨軌跡取向的TCR佈線感測器相較地,偵測器912係組構用於以實質降低數量之軌跡墊塞偵測介質160的粗糙度。 According to various embodiments, the TCR sensor 105 is disposed at the probe transducer 103 such that the longitudinal axis of the TCR sensor 105 is oriented substantially parallel with respect to the trajectory of the magnetic recording medium. The TCR sensor 104 is responsive to a change in the distance between the TCR sensor 105 and the medium 160, and in particular, in response to the roughness of the medium 160. In an embodiment using a trajectory-parallel TCR sensor 104, the detector 912 is configured to substantially reduce the number of trajectory pads as compared to conventional cross-track oriented TCR wiring sensors. The roughness of the medium 160 is measured.

依據若干實施例,功率係藉由電源供應器910而供應至TCR感測器105,以加熱探頭至碟片介面至介質160溫度之上的溫度。在其他實施例中,功率係藉由電源供應器910而提供至TCR感測器105及加熱器102二者,以提供對探頭至碟片介面的加熱。偵測器912係組構要根據探頭 至碟片介面的類型(調變式HDI對非調變式HDI),而偵測藉由TCR感測器105所產生之信號的AC或DC成分中之改變,以指示回應於粗糙度、探頭至介質接觸、或探頭至介質間距改變之自加熱的探頭至碟片介面到介質160之熱轉移的增加速率。 According to several embodiments, power is supplied to the TCR sensor 105 by a power supply 910 to heat the probe to a temperature above the temperature of the media interface 160. In other embodiments, power is provided to both the TCR sensor 105 and the heater 102 by a power supply 910 to provide heating of the probe to the disc interface. Detector 912 is based on the probe To the type of disc interface (modulated HDI vs. non-modulated HDI), and detecting changes in the AC or DC component of the signal generated by the TCR sensor 105 to indicate response to roughness, probe The rate of increase in heat transfer from the self-heating probe to the media interface 160 to the media contact, or from probe to media spacing.

應瞭解的是,即使各式各樣實施例之許許多多的特徵已與各式各樣實施例之結構及功能的細節一起被陳明於上文說明中,此詳細說明亦僅係描繪性,且改變可予以細部地做到其中表明附錄申請專利範圍之用語的廣義意義所指示之全部範疇,尤其在有關藉由各式各樣實施例所描繪之部件的結構及配置中。 It will be appreciated that many of the various features of the various embodiments have been described in the above description together with the details of the structure and function of the various embodiments. And, the changes may be made in detail to the full extent of the broad meaning of the terms used in the appended claims, particularly in the structure and arrangement of the components depicted by the various embodiments.

100‧‧‧滑件 100‧‧‧Sliding parts

101‧‧‧懸架 101‧‧‧suspension

102‧‧‧加熱器 102‧‧‧heater

103‧‧‧探頭轉換器 103‧‧‧ Probe Converter

105‧‧‧TCR感測器 105‧‧‧TCR sensor

107‧‧‧探頭至介質間距 107‧‧‧ Probe to media spacing

160‧‧‧磁性記錄介質 160‧‧‧ Magnetic recording media

140-148‧‧‧處理 Processing 140-148‧‧

200,301,302,801‧‧‧習知TCR感測器 200, 301, 302, 801‧‧ ‧known TCR sensor

202,325,335,825‧‧‧TCR佈線 202,325,335,825‧‧‧TCR wiring

204,327,337,827‧‧‧接點 204,327,337,827‧‧‧Contacts

340‧‧‧前緣 340‧‧‧ leading edge

350‧‧‧後緣 350‧‧‧ trailing edge

402-412‧‧‧處理 402-412‧‧‧Process

900‧‧‧設備 900‧‧‧ Equipment

902‧‧‧控制系統 902‧‧‧Control system

904‧‧‧硬碟驅動器 904‧‧‧ hard disk drive

910‧‧‧電源供應器 910‧‧‧Power supply

912‧‧‧偵測器 912‧‧‧Detector

914‧‧‧控制器 914‧‧‧ Controller

第1圖係依據各式各樣實施例之結合溫度感測器的加熱器致動式探頭轉換器配置之簡略側視圖;第2圖係第1圖中所示之加熱器致動式探頭轉換器配置的正面視圖;第3圖係以預致動之組態及致動之組態顯示第1及2圖的加熱器致動式探頭轉換器配置;第4A圖描繪在探頭轉換器與磁性記錄碟片之表面間的接觸之前、之期間、及之後,用於第1至3圖中所示類型之加熱器致動式記錄探頭轉換器的代表性溫度輪廓;第4B圖描繪在探頭轉換器與磁性記錄碟片之表面間的接觸之前、之期間、及之後,用於非熱致動式記錄探頭 轉換器的代表性溫度輪廓;第5圖係流程圖,顯示依據各式各樣實施例之用以使用具有低電阻接點的電阻式溫度感測器而偵測磁性記錄介質之粗糙度的各式各樣之處理;第6A圖顯示跨越不具有低電阻接點之電阻式溫度感測器的電壓輪廓;第6B圖顯示跨越不具有低電阻接點之電阻式溫度感測器的溫度輪廓;第7圖描繪習知設計之電阻式溫度感測器;第8圖描繪依據各式各樣實施例之具有低電阻接點的電阻式溫度感測器;第9A圖係圖形圖式,顯示習知電阻式溫度感測器的橫跨軌跡電阻輪廓;第9B圖係具有如第9A圖中所示的橫跨軌跡電阻輪廓之習知電阻式溫度感測器的空氣軸承表面視圖;第10A圖係圖形圖式,顯示依據各式各樣實施例之由於橫剖面接觸區域中的增加所導致之電阻式溫度感測器的橫跨軌跡電阻中的減少;第10B圖係依據各式各樣實施例之具有如第10A圖中所示的橫跨軌跡電阻輪廓之電阻式溫度感測器的空氣軸承表面視圖;第11圖係流程圖,顯示依據各式各樣實施例之用以在影響感測器之熱轉移的存在中維持跨越複數個探頭轉換器之複數個電阻式溫度感測器的各者於固定溫度之各式各 樣的處理;第12A圖顯示複數個電阻式溫度感測器之接觸偵測回應為感測器偏壓電流的函數;第12B圖顯示複數個電阻式溫度感測器之接觸偵測回應為感測器過熱比(OHR)/溫度的函數;第13A圖顯示複數個電阻式溫度感測器之粗糙度偵測回應為感測器偏壓電流的函數;第13B圖顯示複數個電阻式溫度感測器之粗糙度偵測回應為感測器過熱比(OHR)/溫度的函數;第14圖係用於與來自Bruun的熱線風速儀:原理及信號回應,1995年之相似圖式一致的熱電阻式溫度感測器佈線之熱轉移平衡的描繪性實例;第15圖係顯示OHR對用於複數個探頭轉換器之電阻式溫度感測器偏壓功率的圖形,說明以固定OHR運作多重電阻式溫度感測器而非以固定偏壓功率、偏壓電流、或偏壓係有利之圖形;第16圖係顯示依據各式各樣實施例之電阻式溫度感測器的電阻對偏壓功率之圖形;第17圖顯示依據各式各樣實施例之藉由多重熱源熱機械模型(MXTM)所預測的最大佈線溫度對不同輸入變數之回歸;第18圖係最大電阻式溫度感測器電阻對不同探頭轉換器加熱器功率的OHR之圖形;第19圖係流程圖,顯示依據各式各樣實施例之用以 使用具有相對於磁性記錄介質之軌跡而平行取向的縱軸之TCR佈線感測器以感測粗糙度、探頭至介質間距中的改變、及/或探頭至介質的接觸之各式各樣的處理;第20圖係習知之橫跨軌跡取向的電阻式溫度感測器之影像;第21圖係依據各式各樣實施例之軌跡平行式電阻式溫度感測器之影像;以及第22圖顯示依據各式各樣實施例之用以偵測粗糙度、探頭至介質的接觸、及探頭至介質的間距改變之設備的圖式。 Figure 1 is a schematic side elevational view of a heater-actuated probe transducer configuration incorporating a temperature sensor in accordance with various embodiments; Figure 2 is a heater-actuated probe conversion as shown in Figure 1 Front view of the configuration; Figure 3 shows the heater-actuated probe transducer configuration of Figures 1 and 2 in a pre-actuated configuration and actuation configuration; Figure 4A depicts the probe transducer and magnetic A representative temperature profile for a heater-actuated recording probe transducer of the type shown in Figures 1 through 3 before, during, and after recording the contact between the surfaces of the disc; Figure 4B depicts the probe transition For non-thermally actuated recording probes before, during, and after contact with the surface of the magnetic recording disc A representative temperature profile of the converter; FIG. 5 is a flow chart showing the use of a resistive temperature sensor having a low resistance contact to detect the roughness of the magnetic recording medium in accordance with various embodiments. Various treatments; Figure 6A shows the voltage profile across a resistive temperature sensor that does not have a low resistance contact; Figure 6B shows the temperature profile across a resistive temperature sensor that does not have a low resistance contact; Figure 7 depicts a conventionally designed resistive temperature sensor; Figure 8 depicts a resistive temperature sensor with low resistance contacts in accordance with various embodiments; Figure 9A is a graphical representation of the display The cross-track resistance profile of the resistive temperature sensor; FIG. 9B is an air bearing surface view of a conventional resistive temperature sensor having a cross-track resistance profile as shown in FIG. 9A; FIG. 10A A graphical representation showing the reduction in cross-track resistance of a resistive temperature sensor due to an increase in cross-sectional contact area in accordance with various embodiments; Figure 10B is implemented in accordance with various embodiments For example, as shown in Figure 10A The air bearing surface view of the resistive temperature sensor across the trajectory resistance profile is shown; Figure 11 is a flow chart showing the presence of heat transfer in the sense sensor according to various embodiments. Maintaining a plurality of resistive temperature sensors across a plurality of probe transducers at various fixed temperatures Example 12A shows that the contact detection response of a plurality of resistive temperature sensors is a function of the sensor bias current; and FIG. 12B shows the contact detection response of a plurality of resistive temperature sensors. The detector overheating ratio (OHR)/temperature function; Figure 13A shows the roughness detection response of a plurality of resistive temperature sensors as a function of the sensor bias current; Figure 13B shows a plurality of resistive temperature senses The roughness response of the detector is a function of the sensor's superheat ratio (OHR)/temperature; Figure 14 is used for the heat of the anemometer from Bruun: principle and signal response, similar to the similar pattern of 1995 A descriptive example of the thermal transfer balance of a resistive temperature sensor wiring; Figure 15 shows a graph of OHR versus bias voltage for a resistive temperature sensor for a plurality of probe transducers, illustrating the operation of multiple resistors with a fixed OHR Temperature sensor rather than a fixed bias power, bias current, or bias system; Figure 16 shows the resistance versus bias power of a resistive temperature sensor in accordance with various embodiments. Figure; Figure 17 shows the basis The regression of the maximum wiring temperature predicted by the multiple heat source thermomechanical model (MXTM) for different input variables is used in various embodiments; Figure 18 is the maximum resistive temperature sensor resistance for different probe converter heater powers. Figure of OHR; Figure 19 is a flow chart showing the use of various embodiments A TCR wiring sensor having a longitudinal axis oriented parallel to the trajectory of the magnetic recording medium to sense various effects of roughness, probe-to-media spacing, and/or probe-to-medium contact Figure 20 is an image of a conventional resistive temperature sensor across a track orientation; Figure 21 is an image of a trajectory parallel resistive temperature sensor according to various embodiments; and Figure 22 shows A pattern of equipment for detecting roughness, probe-to-medium contact, and probe-to-medium spacing changes in accordance with various embodiments.

100‧‧‧滑件 100‧‧‧Sliding parts

101‧‧‧懸架 101‧‧‧suspension

102‧‧‧加熱器 102‧‧‧heater

103‧‧‧探頭轉換器 103‧‧‧ Probe Converter

105‧‧‧TCR感測器 105‧‧‧TCR sensor

107‧‧‧探頭至介質間距 107‧‧‧ Probe to media spacing

160‧‧‧磁性記錄介質 160‧‧‧ Magnetic recording media

Claims (25)

一種設備,包含:探頭轉換器,係組構要與磁性記錄介質相互作用;感測器,係設置於該探頭轉換器處,且具有電阻的溫度係數及感測器電阻,該感測器係組構要操作於周圍溫度之上的溫度及回應於該感測器與該介質間之間距中的改變;以及導電接點,係連接至該感測器且具有接觸電阻,該等接點具有鄰接於該感測器而大於該感測器之橫剖面區域的橫剖面區域,以致使該接觸電阻相對於該感測器電阻而變小,且可忽略地促成藉由該感測器所產生之信號。 An apparatus comprising: a probe converter configured to interact with a magnetic recording medium; a sensor disposed at the probe converter and having a temperature coefficient of resistance and a sensor resistance, the sensor system The configuration is to operate at a temperature above the ambient temperature and in response to a change in the distance between the sensor and the medium; and a conductive contact is coupled to the sensor and has a contact resistance, the contacts having Adjacent to the sensor and greater than the cross-sectional area of the cross-sectional area of the sensor such that the contact resistance becomes smaller relative to the sensor resistance and negligibly contributes to the generation by the sensor Signal. 如申請專利範圍第1項之設備,其中該接觸電阻係相對於該感測器電阻而可忽略。 The device of claim 1, wherein the contact resistance is negligible with respect to the sensor resistance. 如申請專利範圍第1項之設備,其中促成該感測器信號之該感測器的有效尺寸係與該感測器的實體尺寸實質地相同。 The apparatus of claim 1, wherein the effective size of the sensor that contributes to the sensor signal is substantially the same as the physical size of the sensor. 如申請專利範圍第1項之設備,其中該感測器信號並未受到藉由該等接點所促成之該信號的成分所混淆。 The device of claim 1, wherein the sensor signal is not confused by the composition of the signal caused by the contacts. 如申請專利範圍第1項之設備,其中:該等接點之區域係暴露至藉由該感測器及該探頭轉換器之加熱器的其中一者或二者所產生之熱能;且該等接點區域之該接觸電阻係相對於該感測器電阻而變小,並可忽略地促成藉由該感測器所產生之該信號。 The device of claim 1, wherein: the regions of the contacts are exposed to thermal energy generated by one or both of the sensor and the heater of the probe transducer; and such The contact resistance of the contact region is reduced relative to the sensor resistance and negligibly contributes to the signal generated by the sensor. 如申請專利範圍第1項之設備,其中: 該感測器包含感測器元件及該感測器元件於其間之相對末端;該感測器之該等相對末端具有大於該感測器元件之橫剖面區域的橫剖面區域;且該等感測器接點包含該感測器之該等相對末端。 For example, the equipment of claim 1 of the patent scope, wherein: The sensor includes a sensor element and an opposite end of the sensor element therebetween; the opposite ends of the sensor have a cross-sectional area greater than a cross-sectional area of the sensor element; and the sense The detector contacts comprise the opposite ends of the sensor. 如申請專利範圍第1項之設備,其中該等接點具有鄰接於該感測器的橫剖面區域,其係以範圍在1與1000之間的因子大於該感測器之該者。 The device of claim 1, wherein the contacts have a cross-sectional area adjacent to the sensor, the factor of between 1 and 1000 being greater than the sensor. 如申請專利範圍第1項之設備,其中該接觸電阻係以範圍在1與1000之間的因子小於該感測器電阻。 The device of claim 1, wherein the contact resistance is less than the sensor resistance by a factor ranging between 1 and 1000. 如申請專利範圍第1項之設備,其中:該等接點及該感測器之各者包含前緣及後緣;且該感測器之該前緣係相對於該等接點之該前緣而凹進。 The device of claim 1, wherein: the contacts and the sensor each comprise a leading edge and a trailing edge; and the leading edge of the sensor is relative to the front of the contacts The edge is recessed. 如申請專利範圍第1項之設備,其中該感測器係組構要操作於大約0℃至300℃之溫度。 The apparatus of claim 1, wherein the sensor system is to operate at a temperature of between about 0 ° C and 300 ° C. 如申請專利範圍第1項之設備,其中該感測器係位於或靠近該探頭轉換器的接近點。 The device of claim 1, wherein the sensor is located at or near an access point of the probe transducer. 如申請專利範圍第1項之設備,其中該感測器係定尺寸要感測該介質的粗糙度。 The apparatus of claim 1, wherein the sensor is sized to sense the roughness of the medium. 一種方法,包含:以磁性記錄介質相對於探頭轉換器而移動;使用具有電阻之溫度係數的感測器而感測該探頭轉換器之接近點的溫度,該感測器係連接至具有接觸電阻的導 電接點,該等接點具有鄰接於該感測器而大於該感測器之橫剖面區域的橫剖面區域,以致使該接觸電阻相對於該感測器之電阻而變小,且可忽略地促成藉由該感測器所產生之信號;輸出該感測器信號;以及使用該感測器信號而偵測該介質的粗糙度。 A method comprising: moving a magnetic recording medium relative to a probe transducer; sensing a temperature of an approach point of the probe converter using a sensor having a temperature coefficient of resistance, the sensor being connected to having a contact resistance Guide Electrical contacts having a cross-sectional area adjacent to the sensor and greater than a cross-sectional area of the sensor such that the contact resistance becomes smaller relative to the resistance of the sensor and is negligible Generating a signal generated by the sensor; outputting the sensor signal; and detecting the roughness of the medium using the sensor signal. 如申請專利範圍第13項之方法,其中該感測器信號並未受到藉由該等接點所促成之該信號的成分所混淆。 The method of claim 13, wherein the sensor signal is not confused by a component of the signal facilitated by the contacts. 一種設備,包含:複數個探頭轉換器,係組構要與磁性記錄介質相互作用;複數個感測器,具有電阻的溫度係數,其中至少一感測器係設置於各自探頭轉換器上,且係回應於該感測器與該介質間之間距中的改變;以及功率源,係組構要供應偏壓功率至各自探頭轉換器的每一個感測器,且要調整該偏壓功率而在影響該等感測器之熱轉移改變的存在中維持每一個感測器於周圍溫度之上的固定溫度處。 An apparatus comprising: a plurality of probe transducers, the fabric is to interact with a magnetic recording medium; a plurality of sensors having a temperature coefficient of resistance, wherein at least one of the sensors is disposed on a respective probe transducer, and Responding to a change in the distance between the sensor and the medium; and a power source, the fabric is configured to supply bias power to each of the respective probe converters, and the bias power is adjusted Each sensor is maintained at a fixed temperature above the ambient temperature in the presence of a change in thermal transfer that affects the sensors. 如申請專利範圍第15項之設備,其中該至少一感測器係設置於各自探頭轉換器的接近點處。 The device of claim 15 wherein the at least one sensor is disposed at an approximate point of the respective probe transducer. 如申請專利範圍第15項之設備,其中該功率源係組構要調整該偏壓功率,以致使實質固定之過熱比(Overheat ratio;OHR)係在影響該等感測器之熱轉移改變 的存在中跨越所有感測器而被維持。 The apparatus of claim 15, wherein the power source system adjusts the bias power such that a substantially fixed overheat ratio (OHR) affects heat transfer changes of the sensors. The existence of the sensor is maintained across all sensors. 如申請專利範圍第15項之設備,進一步包含:加熱器,係設置於該等探頭轉換器的各者處,且係組構要致動該探頭轉換器,其中該功率源係組構要調整該偏壓功率,而在影響該等感測器之熱轉移改變的存在中維持每一個感測器於該固定溫度處,該等熱轉移改變包含由於所供應至該加熱器之功率所導致的該等者。 The device of claim 15 further comprising: a heater disposed at each of the probe converters, and the system is configured to actuate the probe converter, wherein the power source system is to be adjusted The bias power maintains each of the sensors at the fixed temperature in the presence of a change in thermal transfer affecting the sensors, the heat transfer changes including the power supplied to the heater Those who are. 一種方法,包含:以磁性記錄介質相對於複數個探頭轉換器而移動;使用具有電阻之溫度係數的感測器而感測該等探頭轉換器與該介質間之間距中的改變;供應偏壓功率至該等感測器;以及調整該偏壓功率而在影響該等感測器之熱轉移改變的存在中維持每一個感測器於周圍溫度之上的固定溫度處。 A method comprising: moving a magnetic recording medium relative to a plurality of probe transducers; sensing a change in a distance between the probe transducers and the medium using a sensor having a temperature coefficient of resistance; supplying a bias voltage Power to the sensors; and adjusting the bias power to maintain each sensor at a fixed temperature above ambient temperature in the presence of a change in thermal transfer affecting the sensors. 如申請專利範圍第19項之方法,進一步包含:熱致動該等探頭轉換器而致使該等探頭轉換器朝向該介質移動;以及調整該偏壓功率而在影響該等感測器之熱轉移改變的存在中維持每一個感測器於該固定溫度處,該等熱轉移改變包含由於熱致動該等探頭轉換器所導致的該等者。 The method of claim 19, further comprising: thermally actuating the probe transducers to cause the probe transducers to move toward the medium; and adjusting the bias power to affect thermal transfer of the sensors Each sensor is maintained at the fixed temperature in the presence of a change that includes those caused by thermal actuation of the probe transducers. 一種設備,包含:探頭轉換器,係組構要與具有複數個軌跡之磁性記錄介質相互作用;以及 感測器,具有電阻的溫度係數且係配置於該探頭轉換器,使得該感測器的縱軸係相對於該等軌跡而實質平行地取向,該感測器係回應於該介質的粗糙度及該感測器與該介質間之間距中的改變之其中一者或二者。 An apparatus comprising: a probe transducer configured to interact with a magnetic recording medium having a plurality of tracks; a sensor having a temperature coefficient of resistance and configured in the probe converter such that a longitudinal axis of the sensor is oriented substantially parallel with respect to the tracks, the sensor being responsive to roughness of the medium And one or both of the changes in the distance between the sensor and the medium. 如申請專利範圍第21項之設備,其中該感測器係在周圍溫度之上的溫度處操作。 The device of claim 21, wherein the sensor is operated at a temperature above ambient temperature. 如申請專利範圍第21項之設備,其中該感測器係組構要感測該感測器與該介質之間的接觸。 The device of claim 21, wherein the sensor system is configured to sense contact between the sensor and the medium. 如申請專利範圍第21項之設備,其中該感測器包含具有電阻之溫度係數(Temperature coefficient of resistance;TCR)的佈線,該佈線係在相對末端處被連接至第一接點及第二接點,該第一及第二接點係約略正交於該TCR佈線而取向,且彼此互相軸向地偏置。 The device of claim 21, wherein the sensor comprises a wiring having a temperature coefficient of resistance (TCR), the wiring being connected to the first contact and the second connection at opposite ends The first and second contacts are oriented approximately orthogonal to the TCR wiring and are axially offset from one another. 一種方法,包含:相對於探頭轉換器而移動具有軌跡之磁性記錄介質;以及使用具有電阻之溫度係數的感測器而感測該介質的粗糙度及該探頭轉換器與該介質間之間距中的改變之其中一者或二者,該感測器具有相對於該介質之軌跡而實質平行地取向的縱軸。 A method comprising: moving a magnetic recording medium having a track relative to a probe transducer; and sensing a roughness of the medium using a sensor having a temperature coefficient of resistance and a distance between the probe converter and the medium The sensor has one or both of the changes, the sensor having a longitudinal axis that is oriented substantially parallel with respect to the trajectory of the medium.
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