TW201336105A - Vertical LED with current-guiding structure - Google Patents

Abstract

Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.

Description

Vertical light-emitting diode with current guiding structure

This application is a continuation-in-part of US Patent Application No. 13/161,254 (hereinafter referred to as the '254 case) filed on June 15, 2011, and the '254 case is The continuation of US Patent Application No. 12/823,866 (hereinafter referred to as the '866 case) filed on June 25, 2010, the '866 case is currently published as US Patent No. 8,003,994, and '866 The case is a division of US Patent Application No. 12/136,547 (hereinafter referred to as the '547 case) filed on June 10, 2008, and the '547 case is currently announced as US Patent No. 7,759,670. The '547 case has claimed the advantages of U.S. Provisional Application No. 60/943,533, the entire contents of which are hereby incorporated by reference.

Embodiments of the present invention generally relate to semiconductor processing, and in particular, embodiments of the present invention relate to the formation of light emitting diode (LED) structures.

In the manufacture of a light-emitting diode (LED), an epitaxial structure of an "LED stack" may be formed. For example, the "LED stack" includes a p-doped GaN layer and an n-doped GaN layer. 1 is a schematic diagram showing an example of a conventional LED element 102 having an n-doped layer 106 and a p-doped layer 110 separated by a multi-quantum well (MQW) layer 108. In general, the LED component 102 is deposited on a carrier/growth support substrate (not shown) of a suitable material, such as a c-plane tantalum carbide or a c-plane sapphire, and is bonded by a bonding layer 204. The thermally conductive conductive substrate 101 is joined. The reflective layer 202 enhances brightness. A voltage can be applied between the n-doped layer 106 and the p-doped layer 110 via the n-electrode 117 and the thermally conductive conductive substrate 101, respectively.

In some instances, it may be desirable to control the amount of current through the n-electrode 117 to the substrate 101, for example, to limit power loss and/or prevent damage to the LED component 102. Therefore, an electrically insulating layer 206 is formed under the p-doped layer 110 and in the reflective layer 202 to increase the n-electrode. Contact resistance at 117 and current limiting. The insulating layer 206 can be similar to the current-blocking layer described in "Photonics Spectra, December 1991, pp. 64-66 by H. Kaplan." Kish et al. disclose etching a patterned semiconductor wafer to form a recess and bonding the wafer to a separate LED structure such that the recess is in U.S. Patent No. 5,376,580, the disclosure of which is incorporated herein by reference. A cavity is formed in the bonded structure. When the bonding structure is forward biased by applying a voltage, current will flow in the LED structure, but since air is an electrical insulator, no current will flow through the chamber or flow directly into the cavity. The area under the room. Therefore, the air cavity is treated as another type of current-blocking structure.

Unfortunately, these current-directed methods have some drawbacks. For example, the electrically insulating layer 206, the air chamber, and other conventional current limiting structures may limit thermal conductivity and thus may increase the temperature during operation and detract from component reliability and/or lifetime.

Moreover, conventional LED components, such as LED component 102 of FIG. 1, are susceptible to electrostatic discharge (ESD) and other high voltage transients. ESD spikes may occur, for example, during processing of the component, whether at the time of manufacture of the LED component itself, during shipping, or when placed over a printed circuit board or other suitable fixed surface for electrical connection. Overvoltage transients can occur during the electrical operation of the LED components. Such high voltage transients can damage the semiconductor layer of the component and can even cause component failure, thus reducing the lifetime and reliability of the LED component.

Therefore, there is a need for an improved method for directing current through an LED component.

Embodiments of the present invention propose methods and elements for directing current in semiconductor components, such as light emitting diodes, LEDs.

An embodiment of the invention provides an LED. The LED generally includes a substrate; an LED stack for emitting light and disposed on the substrate, wherein the LED stack includes a p-type semiconductor layer and an n-type semiconductor layer; and the n-type semiconductor layer is disposed on the LED stack And an n-electrode coupled between the substrate and the n-type semiconductor layer and forming a non-ohmic contact with the n-type semiconductor layer.

Another embodiment of the invention provides an LED. The LED typically includes a substrate; an LED stack for emitting light and disposed on the substrate, wherein the LED stack includes a p-type semiconductor layer and an n-type semiconductor layer; an n-electrode disposed on the n-type semiconductor layer; a protective element disposed on the n-type semiconductor; and a conductive material coupled to the substrate and the Protect between components.

Yet another embodiment of the present invention provides an LED. The LED generally includes a substrate; a p-electrode disposed on the substrate and having first and second contacts, wherein the resistance of the first contact is higher than the resistance of the second contact; for emitting light and being disposed at the p An LED stack on the electrode, wherein the LED stack includes a p-type semiconductor layer coupled to the p-electrode and an n-type semiconductor layer; and an n-electrode disposed on the n-type semiconductor layer .

101‧‧‧ Thermal conductive substrate

102‧‧‧LED components

106‧‧‧n doped layer (n-type semiconductor layer)

108‧‧‧Multi-quantum well layer (active layer)

110‧‧‧p-doped layer (p-type semiconductor layer)

117‧‧‧n electrode

119‧‧‧ top surface

202‧‧‧reflective layer

204‧‧‧Connection layer

206‧‧‧Insulation

208‧‧‧Barrier metal layer

211‧‧‧High contact resistance zone

213‧‧‧Low contact resistance zone

300‧‧‧ equivalent circuit

302‧‧‧R _L

304‧‧‧R _H

306‧‧‧dipole

400‧‧‧LED components

402‧‧‧Second current path

404‧‧‧Electrical insulation

411‧‧‧Second conductive material

412‧‧‧Non-ohmic contact

500‧‧‧ equivalent circuit

502‧‧‧ equivalent resistor

504‧‧‧Ideal LED

506‧‧‧TVS diode

700‧‧‧ equivalent circuit

810‧‧‧protective components

1002‧‧‧Metal metal layer

1102‧‧‧Shared package anode wire

1104‧‧‧welding line

1106‧‧‧Cathode package wire

1108‧‧‧welding line

1200‧‧‧Chart

1202‧‧‧Executive current-to-voltage curve for LED components without a second current path

1204‧‧‧An exemplary current-to-voltage curve for an LED component with a second current path

1300‧‧‧ exemplary chart

1302‧‧‧LED components

1304‧‧‧LED components

1306‧‧‧LED components

1308‧‧‧LED components

1310‧‧‧LED components

1312‧‧‧LED components

For a more detailed description of the above-described reference features of the present invention, a more particular description of the present invention, that is, the brief summary above may be obtained by reference to the embodiments, some of which are shown in the appended In the schema. However, it is to be understood that the appended drawings are only illustrative of the exemplary embodiments of the invention

Fig. 1 is a schematic view showing an example of a conventional LED element having a current guiding structure.

Fig. 2 is a view showing an example of an LED element having a current guiding structure of the present invention.

Fig. 3 is an equivalent circuit diagram showing the LED element in Fig. 2.

Fig. 4 is a view showing an example of an LED element having a second current path of the present invention.

Fig. 5 is an equivalent circuit diagram showing the LED element of Fig. 4.

Fig. 6 is a view showing an example of an LED element having a current guiding structure and a second current path of the present invention.

Fig. 7 is an equivalent circuit diagram showing the LED element of Fig. 6.

Fig. 8 is a view showing an example of an LED element of the present invention having a second current path and having a protective element.

Fig. 9 is a view showing an example of an LED element having a current guiding structure, a second current path and a protective element of the present invention.

Fig. 10 is a view showing an example of the LED element of the present invention having a second current path and being of a wafer type.

Fig. 11 is a view showing an example of the LED element of the present invention having a second current path and being of a package type.

Figure 12 shows a current-voltage diagram comparing LED elements having a second current path and no second current path.

Figure 13 is a graph showing the degree of electrostatic protection and the corresponding survival rate of an LED element having a second current path and having no second current path.

Embodiments of the present invention generally propose methods for controlling the flow of current through a semiconductor component, such as an LED. This control may be by a current directing structure, a second current path, or a combination of the two.

In the following, the relative terms such as "above", "below", "adjacent to", "under", etc. are for convenience of explanation only. No specific direction is required.

Example of current guiding structure

Fig. 2 is a view showing an example of an LED element having a current guiding structure of the present invention. This LED element comprises an element structure known as an LED stack, and the LED stack comprises any semiconductor material suitable for emitting light, such as AlInGaN. The LED stack may include a heterojunction composed of a p-type semiconductor layer 110, an active layer 108 for emitting light, and an n-type semiconductor layer 106. The LED stack has a top surface 119 and the top surface 119 has been roughened as shown in FIG. The LED component can include an n-electrode 117 formed over the top surface 119, and a p-electrode on the p-type semiconductor layer 110 (the reflective layer 202 and the barrier metal layer 208 can be used as a p-electrode), wherein The n-electrode 117 is electrically coupled to the n-type semiconductor layer 106.

The reflective layer 202 is configured to abut the p-type layer 110 and is interposed with a barrier metal layer 208 to form a low contact resistance region 213 and a high contact resistance region 211, respectively. For certain embodiments, the volume of the low contact resistance region 213 is greater than the high contact resistance region 211. The high contact resistance region 211 which is electrically conductive but has a higher electric resistance than the low contact resistance region 213 can be formed using a metal material as described below. Use areas with different contact resistances and carefully control them to guide the electricity The flow is to illuminate from the active layer in the desired region, for example, the luminescence is primarily from the active layer of the region that is not under the n-electrode 117 used to enhance light emission.

In this manner, a fully conductive current conducting structure is shown in FIG. 2 compared to conventional LED elements having conventional current limiting or other current directing structures (such as LED elements having electrically insulating layer 206 in FIG. 1). The LED elements have greater thermal conductivity. Therefore, the LED element of FIG. 2 and the LED element having the conductive current guiding structure of other embodiments of the present invention can enjoy reduced operating temperature and increased component reliability and/or compared to conventional LED elements. life.

Fig. 3 is a schematic view showing an equivalent circuit 300 of the LED element in Fig. 2. As shown, the equivalent circuit 300 includes resistors R _L 302 and R _H 304 in parallel, and the resistors R _L 302 and R _H 304 simulate the high contact resistance region 211 and the low contact resistance region 213 of FIG. Equivalent resistance. Although only one resistor is shown as a low contact resistance region, resistor R _L 302 may represent a lumped equivalent of more than one parallel low contact resistance region, such as the two regions 213 shown in FIG. Similarly, resistor R _H 304 can represent a lumped equivalent of more than one parallel high contact resistance region 211. For certain embodiments, the equivalent high contact resistance can be at least twice the equivalent low contact resistance. As shown, the parallel resistors R _L 302 and R _H 304 are connected in series with the diode 306, which represents an ideal LED without series resistance.

One or more substrates 201 are disposed adjacent to the p-electrode (consisting of the reflective layer 202 and the barrier metal layer 208 in FIG. 2). The substrate 201 can be electrically conductive or semi-conductive. In some embodiments, the substrate 201 can be thermally conductive. A conductive substrate may be a single layer or multiple layers, and may include a metal or a metal alloy such as Cu, Ni, Ag, Au, Al, Cu-Co, Ni-Co, Cu-W, Cu-Mo, Ge, Ni/Cu, and Ni/Cu-Mo. Such a substrate 201 can be deposited using any suitable thin film deposition method, such as electrochemical deposition (ECD), electroless deposition (Eless CD), chemical vapor deposition (CVD), and organometallic chemical vapor deposition. Method (MOCVD), and physical vapor deposition (PVD). For certain embodiments, a seed metal layer can be deposited using electroless deposition and then one or more additional metal layers of the substrate are deposited on the seed metal layer using electroplating. The semi-conductive substrate may comprise a single layer or multiple layers and may be composed of, for example, germanium (Si) or tantalum carbide (SiC). The thickness of the substrate 201 can be in the range of 10 to 400 μm.

The reflective layer 202 can comprise a single layer or multiple layers, including any suitable The material is used to reflect light and has a relatively low resistance compared to the material used to create the high contact resistance region 211. For example, the reflective layer 202 may include, for example, Ag, Au, Al, Ag-Al, Mg/Ag, Mg/Ag/Ni, Mg/Ag/Ni/Au, AgNi, Ni/Ag/Ni/Au, Ag/Ni. /Au, Ag/Ti/Ni/Au, Ti/Al, Ni/Al, AuBe, AuGe, AuPd, AuPt, AuZn, or using Ag, Au, Al, Ni, Cr, Mg, Pt, Pd, Rh, Or an alloy of Cu.

For some embodiments, the low contact resistance region 213 can comprise an omni-directional reflective (ODR) system. An ODR system may include a transparent conductive layer and a reflective layer composed of a material such as indium tin oxide (ITO) or indium zinc oxide (IZO). The ODR system can be plugged with a current limiting structure or other suitable structure for directing current. An exemplary ODR system is disclosed in commonly-owned U.S. Patent Application Serial No. 11/682,780, filed on March 6, 2007, and entitled "Vertical Light-Emitting Diode Structure with Omni-Directional Reflector" The full text is incorporated herein by reference.

The n-electrode 117 (also referred to as a contact pad or n-pad) may be a single metal layer or a multiple metal layer, and the single metal layer or multiple metal layers are composed of any material suitable for conducting electricity, such as Cr/Au, Cr/Al, Cr/Pt/Au, Cr/Ni/Au, Cr/Al/Pt/Au, Cr/Al/Ni/Au, Ti/Al, Ti/Au, Ti/Al/Pt/Au, Ti/ Al/Ni/Au, Al, Al/Pt/Au, Al/Pt/Al, Al/Ni/Au, Al/Ni/Al, Al/W/Al, Al/W/Au, Al/TaN/Al, Al/TaN/Au, Al/Mo/Au. The thickness of the n-electrode 117 may be about 0.1 to 50 μm. The n-electrode 117 can be formed over the top surface 119 of the LED stack by deposition, sputtering, evaporation, electroplating, electroless plating, coating, and/or printing.

The barrier metal layer 208 can be a single layer or multiple layers, and the single layer or multiple layers include any material suitable for forming the high contact resistance region 211. For example, the barrier metal layer 208 may include, for example, Ag, Au, Al, Mo, Ti, Hf, Ge, Mg, Zn, Ni, Pt, Ta, W, W-Si, W/Au, Ni/Cu, Ta/ Au, Ni/Au, Pt/Au, Ti/Au, Cr/Au, Ti/Al, Ni/Al, Cr/Al, AuGe, AuZn, Ti/Ni/Au, W-Si/Au, Cr/W/ Materials such as Au, Cr/Ni/Au, Cr/W-Si/Au, Cr/Pt/Au, Ti/Pt/Au, Ta/Pt/Au, ITO, and IZO.

As shown in FIG. 2, the protective layer 220 may be formed on a side surface adjacent to the LED element. The protective layer 220 can serve as a passivation layer to protect the LED components (especially the heterojunction) from electrical and chemical conditions in the surrounding environment.

For example, by any suitable treatment (such as electrochemical deposition or no electrochemical deposition) The deposition method, as one or more layers of the reflective layer 202, forms a high/low contact resistance region. The region of the reflective layer 202 designated as the high contact resistance region 211 is then removed by any suitable process, such as wet etching or dry etching. After the specified area is removed, a barrier metal layer 208 is formed in the blank space within the reflective layer 202. For some embodiments as shown in FIG. 2, the barrier metal layer 208 constituting the high contact resistance region 211 can be filled into voided spaces within the reflective layer 202 and cover the reflective layer.

For certain embodiments, the top surface 119 of the LED stack can be patterned or roughened in order to increase light extraction compared to an LED stack having a smooth top surface. The patterning or roughening of the top surface 119 can utilize any suitable technique (e.g., wet or dry etching).

For certain embodiments, the current directing structures described herein can be combined with the second current paths shown in FIGS. 6 and 9. In the following in connection with Fig. 4, the second current path will be described in more detail.

Example of the second current path

4 is a schematic diagram showing an embodiment of an exemplary LED component 400 having a second current path 402 of the present invention. As shown, the LED element 400 can include a substrate 201, a p-electrode 207 disposed on the substrate 201, an LED stack 104 disposed on the p-electrode 207, and an n-electrode 117 disposed on the LED stack 104. The substrate 201 may be thermally conductive and electrically conductive or semiconductive as described above. The LED stack 104 can include a heterojunction that can include a p-type semiconductor layer 110, an active layer 108 for emitting light, and an n-type semiconductor layer 106. A second conductive material 411 is connectable to the substrate 201 and the n-type semiconductor layer 106 and forms a non-ohmic contact 412 with the n-type semiconductor layer 106 to provide a second current path between the substrate 201 and the n-type semiconductor layer 106. 402. The second conductive material 411 can be formed by any suitable process such as electron beam deposition, sputtering, and/or printing.

As shown, the electrically insulating layer 404 can separate the second electrically conductive material 411 from at least a portion of the LED stack 104. The insulating layer 404 can comprise any suitable electrically insulating material such as SiO ₂ , Si ₃ N ₄ , TiO ₂ , Al ₂ O ₃ , HfO ₂ , Ta ₂ O ₅ , spin-on-glass, SOG), MgO, polymers, polyimine, photoresistors, parylene, SU-8, and thermoplastics. For some embodiments, the protective layer 220 can serve as the insulating layer 404.

As described above, the substrate 201 may be a single layer or multiple layers, and the single layer or multiple layers include a metal or a metal alloy such as Cu, Ni, Ag, Au, Al, Cu-Co, Ni-Co, Cu-W, Cu-Mo, Ge, Ni/Cu, and Ni/Cu-Mo. The thickness of the substrate 201 can be about 10 to 400 μm.

Fig. 5 is a view showing an equivalent circuit 500 of the LED element in Fig. 4. As shown, the equivalent circuit 500 includes two parallel current paths. It comprises a first current path based equivalent resistor R _L 502, equivalent resistor R _L 502 over the system and the LED 504 connected in series to form a current path from substrate 201 to the n-electrode 117 along the. The second current path 402 is represented as a bidirectional transient voltage suppression (TVS) diode 506. The operation of the TVS diode 506 can be similar to two relatively series Zener diodes and can be used to protect the resistor 502 and the ideal LED 504 from high voltage transients. Compared to other common overvoltage protection components (such as varistor or gas discharge tube), TVS diode 506 reacts more quickly to overvoltage, making TVS diode 506 useful for protecting very fast and frequent harmful voltages. State, such as electrostatic discharge (ESD). The second conductive material 411 in FIG. 4 can form the TVS diode 506 in FIG. When the induced voltage exceeds the Zener breakdown voltage, the second conductive material 411 can shunt excess current in either direction.

Figure 6 is a schematic illustration of another embodiment of an exemplary LED component having a second current path 402 of the present invention. As shown, the LED component having the second current path 402 also includes a current directing structure comprised of respective high/low contact resistance regions 211/213. For example, as described above with respect to FIG. 2, these different contact regions can be formed by interposing a barrier metal layer 208 in the reflective layer 202.

Fig. 7 is a view showing an equivalent circuit 700 of the LED element in Fig. 6. As shown, FIG. 5, a single equivalent resistor R _L 502 are replaced by a series combination of R _H and R _L 302 to 304, 304 adjacent R _H and R _L 302 represented in Figure 6 of the high / low contact resistance District 211/213. The remainder of circuit 700 is identical to circuit 500 of Figure 5. That is to say, the LED element of Fig. 6 can have the advantages of current steering and transient suppression.

Figure 8 is a schematic diagram showing another embodiment of an exemplary LED element having a second current path 402 of the present invention. In this embodiment, a protection element 810 is formed in the second current path 402. As shown, a protection element 810 can be formed over the n-type semiconductor layer 106 and can be used to increase transient voltage protection or current capability, thereby increasing the reliability and/or lifetime of the LED component. The protective element 810 can comprise any suitable material such as ZnO, ZnS, TiO ₂ , NiO, SrTiO ₃ , SiO ₂ , Cr ₂ O ₃ , and polymethyl methacrylate (PMMA). The thickness of the protective element 810 can range from about 1 nm to 10 [mu]m.

As shown in FIG. 9, an LED element having a second current path 402 and a protection element 810 (as shown in FIG. 8) may also include a plurality of high/low contact resistance regions 211/213. Current guiding structure. For example, as described above with respect to FIG. 2, these different contact regions can be formed by interposing a barrier metal layer 208 in the reflective layer 202.

Figure 10 is a schematic illustration of an embodiment of an exemplary LED element of the present invention having a second current path and being of the wafer type. As shown, a conforming metal layer 1002 can be deposited over the protective element 810 in the second current path. The bonding layer 1002 may comprise any material suitable for electrical connection, such as Al, Au, Ti/Au, Ti/Al, Ti/Pt/Au, Cr/Au, Cr/Al, Ni/Au, Ni/. Al, or Cr/Ni/Au. The thickness of the conforming layer 1002 can range from 0.5 to 10 μm. For certain embodiments, the n-electrode 117 can be extended to allow bonding to a package, as explained below with respect to FIG.

Fig. 11 is a view showing a package type embodiment of the LED element of Fig. 10 of the present invention. As shown, the substrate 201 is bonded to a common package anode lead 1102. The bonding layer 1002 can be connected to the anode lead 1102 by a bonding wire 1104 that is connected to the bonding layer 1002, thus forming a second current path. The n-electrode 117 can be connected to a cathode package lead 1106 by another bond line 1108.

Figure 12 shows a graph 1200 of an exemplary current versus voltage curve 1204, 1202 depicting LED elements with/without a second current path, respectively. As shown by the current versus voltage curve 1204, the second current path can allow an LED component to withstand higher voltages without excessive current, thereby preventing damage and/or extending component life.

Figure 13 is an exemplary graph 1300 showing the correspondence between the survival rate of the LED elements with/without the second current path and the ESD voltage. LED elements 1304, 1306, 1308, 1310, 1312 that do not have a second current path pass the test at different ESD voltages with different rates of survival. Conversely, LED element 1302 having a second current path passes the test at a ratio equal to or close to 100% at a relatively large ESD voltage of greater than 2000 volts.

While the current directing structures described herein have advantages in application to vertical light emitting diode (VLED) components, those skilled in the art will appreciate that such advantages are generally applicable to most semiconductor components. Therefore, for any type of semiconducting with a PN junction Body elements, using the structures described herein, will aid in the formation of low resistance contacts and/or transient inhibitors.

While the foregoing is directed to embodiments of the present invention, the invention may

106‧‧‧n doped layer

110‧‧‧p-doped layer

117‧‧‧n electrode

119‧‧‧ top surface

201‧‧‧Substrate

202‧‧‧reflective layer

208‧‧‧Barrier metal layer

211‧‧‧High-order contact resistance zone

213‧‧‧low-order contact resistance area

220‧‧‧Protective layer

402‧‧‧Second current path

404‧‧‧Electrical insulation

411‧‧‧Second conductive material

412‧‧‧Non-ohmic contact

Claims (37)

A light emitting diode (LED) includes: a substrate; an LED stack for emitting light and disposed on the substrate, wherein the LED stack comprises: a p-type semiconductor layer; and a A semiconductor layer is disposed over the p-type conductor layer, wherein the LED stack provides a first current path to the LED; and a second path of the LED is different from the second path. The light-emitting diode of claim 1, wherein the second path is coupled between the substrate and the n-type semiconductor layer. The light-emitting diode of claim 2, wherein the second path forms a non-ohmic contact with the n-type semiconductor layer. The light-emitting diode according to claim 2, wherein the second path comprises a conductive material. The light-emitting diode according to item 4 of the patent application, wherein the conductive material comprises a multiple metal layer. The light-emitting diode of claim 4, wherein the conductive material comprises at least one of: Ni, Ag, Au, Al, Mo, Pt, W, W-Si, Ta, Ti, Hf, Ge, Mg, Zn, W/Au, Ta/Au, Pt/Au, Ti/Au, Ti/Al, Ti/Pt/Au, Ti/Ni/Au, Ta/Pt/Au, W-Si/Au, Cr/Au, Cr/Al, Ni/Au, Ni/Al, Nui/Cu, Cr/Ni/Au, Cr/W/Au, Cr/W-Si/Au, Cr/Pt/Au, AuGe, AuZn, ITO, or IZO. The light emitting diode according to claim 2, further comprising an electrically insulating material between the second current path and the LED stack. The light-emitting diode according to claim 7, wherein the electrically insulating material comprises a covering layer adjacent to a side surface of the LED stack. The light-emitting diode according to claim 7, wherein the electrical insulating material comprises at least one of the following: SiO ₂ , Si ₃ N ₄ , TiO ₂ , Al ₂ O ₃ , HfO ₂ , Ta ₂ O ₅ , spin-coated glass (SOG), MgO, polymer, polyimine, photoresistor, parylene, SU-8, or thermoplastic. The illuminating diode of claim 1, wherein the second current path is structured to protect the LED stack from a high voltage transient. The light emitting diode according to claim 10, wherein the high voltage transient system comprises an electrostatic discharge (ESD). The illuminating diode of claim 2, wherein the second current path comprises a protective element disposed adjacent to the n-type semiconductor layer. The light-emitting diode according to claim 12, wherein the protective element comprises at least one of: ZnO, ZnS, TiO ₂ , NiO, SrTiO ₃ , SiO ₂ , Cr ₂ O ₃ , and polymethacrylic acid. Methyl fat (PMMA). The light-emitting diode according to claim 12, wherein the protective element has a thickness ranging from 1 nm to 10 μm. The light-emitting diode of claim 12, wherein the second current path comprises a bonding layer disposed adjacent to the protective element. The illuminating diode of claim 15 wherein the second current path comprises a wire coupled between the substrate and the bonding layer. A light-emitting diode according to claim 15 wherein the bonding layer comprises a plurality of metal layers. The light-emitting diode according to the fifteenth aspect of the invention, wherein the bonding layer comprises at least one of the following: Ti/Au, Ti/Al, Ti/Pt/Au, Cr/Au, Cr/Al, Al, Au, Ni/Au, Ni/Al, or Cr/Ni/Au. The light-emitting diode according to claim 15 wherein the thickness of the bonding layer is between 0.5 and 10 μm. The light emitting diode according to claim 1, further comprising a p electrode interposed between the substrate and the LED stack, wherein the p electrode system comprises a conductive structure for conducting current The LED stack is led so that the light emitted directly below the n-electrode is less than the light emitted from other regions of the LED stack. The light emitting diode of claim 20, wherein the current guiding structure comprises first and second contacts, the first contact having a higher electrical resistance than the second contact. A light emitting diode (LED) comprising: an n electrode; An LED stack for emitting light and disposed under the n-electrode, wherein the LED stack includes an n-type semiconductor layer coupled to the n-electrode and a photo disposed under the n-type semiconductor layer a p-type semiconductor layer; and a p-electrode disposed under the p-type semiconductor layer, wherein the p-electrode system includes a conductive structure for directing current through the LED stack such that directly below the n-electrode The light emitted directly is less than the light emitted from other areas of the LED stack. The light emitting diode of claim 22, wherein the current guiding structure comprises first and second contacts, the first contact having a higher electrical resistance than the second contact. The light-emitting diode according to claim 23, wherein the first contact layer comprises a barrier metal layer. The light-emitting diode according to claim 23, wherein the first contact layer comprises a multiple metal layer. The light-emitting diode according to claim 23, wherein the first contact system comprises at least one of the following: PT, Ta, W, W-Si, Ni, Cr/Ni/Au, W/Au, Ta/ Au, Ni/Au, Ti/Ni/Au, W-Si/Au, Cr/W/Au, Cr/W-Si/Au, Pt/Au, Cr/Pt/Au, or Ta/Pt/Au. The light emitting diode according to claim 23, wherein the second contact system comprises a reflective layer. The light-emitting diode according to claim 23, wherein the second contact system comprises at least one of the following: Ag, Au, Al, Ag-Al, Mg/Ag, Mg/Ag/Ni, Mg/Ag/ Ni/Au, AgNi, Ni/Ag/Ni/Au, Ag/Ni/Au, Ag/Ti/Ni/Au, Ti/Al, Ni/Al, AuBe, AuGe, AuPd, AuPt, AuZn, ITO, IZO, Or an alloy containing at least one of Ag, Au, Al, Ni, Cr, Mg, Pt, Pd, Rh, or Cu. The light emitting diode according to claim 23, wherein the second contact system comprises an omni-directional reflective (ODR) system. The light-emitting diode according to claim 23, wherein the area of the second contact is larger than the area of the first contact. The light-emitting diode of claim 23, wherein the first contact is disposed in a blank space of the second contact. According to the illuminating diode of claim 23, wherein the resistance value of the first contact It is at least twice the resistance of the second contact. The light emitting diode according to claim 22, further comprising a substrate disposed under the p electrode and coupled to the p electrode. The light-emitting diode according to claim 22, wherein the LED is a vertical light-emitting diode. A light emitting diode (LED) includes: a substrate; a p electrode disposed under the substrate; an LED stack for emitting light and disposed on the p electrode, wherein the LED The stacking system includes: a p-type semiconductor layer coupled to the p-electrode; and an n-type semiconductor layer disposed on the p-type semiconductor layer, wherein the LED stack provides a first current path to the An n-electrode is disposed over the n-type semiconductor layer, wherein the p-electrode includes a conductive structure for directing current through the LED stack such that it is directly emitted directly below the n-electrode The light is less than the light emitted from the other regions of the LED stack; and the second current path of the LED is different from the first current path, wherein the second current path is coupled to the substrate and the Between the n-type semiconductor layers, and wherein the second current path comprises a protection element disposed adjacent to the n-type semiconductor layer. The light-emitting diode of claim 35, wherein the current guiding structure comprises first and second contacts, the first contact having a higher electrical resistance than the second contact. The light-emitting diode according to claim 35, wherein the protective element comprises at least one of: ZnO, ZnS, TiO ₂ , NiO, SrTiO ₃ , SiO ₂ , Cr ₂ O ₃ , and polymethacrylic acid. Methyl fat (PMMA).