TW201315081A - Non-contact electric power supply device - Google Patents
Non-contact electric power supply device Download PDFInfo
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- TW201315081A TW201315081A TW101115773A TW101115773A TW201315081A TW 201315081 A TW201315081 A TW 201315081A TW 101115773 A TW101115773 A TW 101115773A TW 101115773 A TW101115773 A TW 101115773A TW 201315081 A TW201315081 A TW 201315081A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/40—Circuit arrangements or systems for wireless supply or distribution of electric power using two or more transmitting or receiving devices
- H02J50/402—Circuit arrangements or systems for wireless supply or distribution of electric power using two or more transmitting or receiving devices the two or more transmitting or the two or more receiving devices being integrated in the same unit, e.g. power mats with several coils or antennas with several sub-antennas
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/005—Mechanical details of housing or structure aiming to accommodate the power transfer means, e.g. mechanical integration of coils, antennas or transducers into emitting or receiving devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
- H02J50/12—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling of the resonant type
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/60—Circuit arrangements or systems for wireless supply or distribution of electric power responsive to the presence of foreign objects, e.g. detection of living beings
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/80—Circuit arrangements or systems for wireless supply or distribution of electric power involving the exchange of data, concerning supply or distribution of electric power, between transmitting devices and receiving devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/90—Circuit arrangements or systems for wireless supply or distribution of electric power involving detection or optimisation of position, e.g. alignment
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/00032—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries characterised by data exchange
- H02J7/00045—Authentication, i.e. circuits for checking compatibility between one component, e.g. a battery or a battery charger, and another component, e.g. a power source
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Abstract
Description
本發明係關於以非接觸方式供電至受電裝置的非接觸式供電裝置。 The present invention relates to a contactless power supply device that supplies power to a power receiving device in a non-contact manner.
以往存在有從供電裝置以非接觸方式往受電裝置進行供電的非接觸式供電系統(例如參照專利文獻1)。 In the past, there has been a non-contact power supply system that supplies power from a power supply device to a power receiving device in a non-contact manner (see, for example, Patent Document 1).
近年來為達到進一步提升用戶方便性而探討一種所謂自由布局型非接觸式供電系統,將受電裝置設置於供電裝置頂面(供電面)的任意位置,即可往該受電裝置進行供電。此系統中的供電裝置之內部,沿著其供電面排列有多數之1次(primary)線圈。供電裝置對於有受電裝置存在的區域中的1次線圈進行激磁。藉由來自受激磁的1次線圈之磁通變化,使受電裝置的2次(secondary)線圈感應生電(例如參照專利文獻2)。 In recent years, in order to further improve user convenience, a so-called free-layout type non-contact power supply system has been proposed, and the power receiving device is installed at any position on the top surface (power supply surface) of the power supply device, and power can be supplied to the power receiving device. Inside the power supply unit of this system, a plurality of primary coils are arranged along the power supply surface. The power supply device excites the primary coil in the region where the power receiving device exists. The secondary coil of the power receiving device is induced to generate electricity by a change in the magnetic flux from the primary coil of the excitation (see, for example, Patent Document 2).
受電裝置在此系統中只要係設置於供電裝置的供電面即可,不必位於特定位置。例如,期待將此非接觸式供電系統利用於內置有受電裝置的行動終端機之充電。 The power receiving device is not required to be located at a specific position as long as it is disposed in the power supply surface of the power supply device. For example, it is expected that this non-contact power supply system can be used for charging a mobile terminal in which a power receiving device is built.
又,此供電裝置係利用1次線圈進行存在偵測,偵測供電面是否有受電裝置等物體存在。該存在偵測係對於1次線圈進行間歇性激磁,並依據此時1次線圈流通電流的變化來進行。例如1次線圈附近有物體存在時,1次線圈成為與物體磁性結合的狀態,使得1次線圈的阻抗增大。因此,1次線圈上流通的電流減少。所以,供電裝置在受激磁的1次線圈之電流係於閾值以下時,偵測到該1次線圈周邊有物體存在之情形。 Moreover, the power supply device performs presence detection using the primary coil to detect whether there is an object such as a power receiving device on the power supply surface. The presence detection system intermittently excites the primary coil and performs the change according to the current flowing through the coil at this time. For example, when an object exists in the vicinity of the primary coil, the primary coil is in a state of being magnetically coupled to the object, so that the impedance of the primary coil is increased. Therefore, the current flowing through the primary coil is reduced. Therefore, when the current of the energized primary coil is below the threshold, the power supply device detects the presence of an object around the primary coil.
專利文獻1:日本特開2003-204637號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2003-204637
專利文獻2:日本特開2008-5573號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 2008-5573
上述供電裝置即使在往受電裝置進行供電中,亦藉由該供電之1次線圈以外的待命中之1次線圈,每固定週期進行存在偵測。所以,有些情況下相鄰的2個1次線圈分別同時進行供電及存在偵測。此種情況下,兩1次線圈所形成的2個磁場可能會互相干涉。因此,有可能使得作用於2次線圈的磁性能量減少,往相受電裝置的供電效率降下。 The power supply device performs presence detection every fixed period by the one-time coil other than the primary coil of the power supply even when power is supplied to the power receiving device. Therefore, in some cases, the adjacent two primary coils are simultaneously powered and detected. In this case, the two magnetic fields formed by the two primary coils may interfere with each other. Therefore, it is possible to reduce the magnetic energy acting on the secondary coil and reduce the power supply efficiency to the phase receiving device.
本發明之目的在於提供一種非接觸式供電裝置,可抑制在同時進行往受電裝置供電及存在偵測時的供電效率降低。 It is an object of the present invention to provide a non-contact power supply device capable of suppressing a decrease in power supply efficiency when power is supplied to a power receiving device at the same time and detection is detected.
為解決上述問題,本發明之非接觸式供電裝置,包含用來設置受電裝置的供電面以及沿著該供電面配置的多數之供電單元,使該多數之供電單元之中的至少1個供電單元產生磁通,並利用藉由該磁通的電磁感應而以非接觸方式供電至該受電裝置,其特徵在於,多數之供電單元各包含:第1電源側開關元件及第1接地側開關元件,串聯連接在電源與接地之間;第2電源側開關元件及第2接地側開關元件,串聯連接在該電源與該接地之間;供電用線圈,動作式連接於該第1電源側開關元件與該第1接地側開關元件之間的第1連接點,與該第2電源側開關元件與該第2接地側開關元件之間的第2連接點之間;激磁驅動電路,將該各開關元件導通切斷,使該供電用線圈激磁而產生磁通;以及存在偵測部,依據該供電用線圈的電流或電壓,偵測有無設置於該供電面的物體;該激磁驅動電路在該受電裝置受到供電時,將該第1電源側開關元件及該第2接地側開關元件之組,以及該第2電源側開關 元件及該第1接地側開關元件之組,兩組交互導通切斷,該激磁驅動電路在利用該存在偵測部偵測有無物體時,將該第1電源側開關元件與該第1接地側開關元件,交互導通切斷,並將該第2電源側開關元件固定成切斷狀態,且將該第2接地側開關元件固定成導通狀態。 In order to solve the above problems, the contactless power supply device of the present invention includes a power supply surface for setting the power receiving device and a plurality of power supply units disposed along the power supply surface, and at least one power supply unit among the plurality of power supply units Generating a magnetic flux and supplying the power receiving device to the power receiving device in a non-contact manner by electromagnetic induction of the magnetic flux, wherein the plurality of power supply units each include: a first power source side switching element and a first ground side switching element; The power supply and the ground are connected in series; the second power supply side switching element and the second ground side switching element are connected in series between the power supply and the ground; and the power supply coil is operatively connected to the first power supply side switching element and a first connection point between the first ground-side switching elements and a second connection point between the second power-side switching element and the second ground-side switching element; and an excitation drive circuit for each of the switching elements Turning off, causing the power supply coil to be excited to generate magnetic flux; and detecting means for detecting presence or absence of an object disposed on the power supply surface according to the current or voltage of the power supply coil; Exciting driving circuit when the power supply by the power receiving device, the set of first power supply side switching elements and said second ground-side of the switching element, and a second power source side switching The first switching element and the first grounding side switching element are electrically connected to each other, and the excitation driving circuit detects the presence or absence of an object by the presence detecting unit, and the first power supply side switching element and the first ground side are The switching element is alternately turned off, and the second power supply side switching element is fixed in a disconnected state, and the second ground side switching element is fixed in an on state.
又,宜於上述構成中,在利用該存在偵測部偵測有無物體時,在將該第1電源側開關元件與該第1接地側開關元件交互導通切斷之際,將該第1接地側開關元件的導通時間設定成:使該第1接地側開關元件的導通時間比切斷時間更長。 Further, in the above configuration, when the presence detecting unit detects the presence or absence of an object, the first ground is turned on when the first power supply side switching element and the first ground side switching element are alternately turned on and off. The on-time of the side switching element is set such that the on-time of the first ground-side switching element is longer than the off-time.
又,宜於上述構成中,使該激磁驅動電路於存在偵測及供電均未進行的待命狀態中,將該第1及第2電源側開關元件切斷。 Further, in the above configuration, the excitation drive circuit is configured to cut the first and second power supply side switching elements in a standby state in which neither detection nor power supply is performed.
又,宜於上述構成中,使該激磁驅動電路在該待命狀態中僅將該第1及第2接地側開關元件的其中之一導通,並將該第1電源側開關元件與該第2電源側開關元件切斷。 Further, in the above configuration, the excitation drive circuit turns on only one of the first and second ground-side switching elements in the standby state, and connects the first power supply side switching element and the second power supply. The side switching element is turned off.
又,宜於上述構成中,使該存在偵測部依據該供電用線圈的電流或電壓來偵測設置於該供電面的物體是否係金屬。 Further, in the above configuration, the presence detecting unit detects whether the object provided on the power feeding surface is metal based on the current or voltage of the power feeding coil.
依據本發明,能在非接觸式供電裝置中,抑制往受電裝置同時進行供電及存在偵測時的供電效率降低。 According to the present invention, it is possible to suppress a decrease in power supply efficiency when power is supplied to the power receiving device and detection is performed in the non-contact power supply device.
以下參照圖1~圖8,說明將本發明的非接觸式供電裝置具體化至非接觸式供電系統的實施形態。 Hereinafter, an embodiment in which the non-contact power supply device of the present invention is embodied in a non-contact power supply system will be described with reference to Figs. 1 to 8 .
如圖1所示,非接觸式供電系統包含供電裝置10與受電裝置30。在本例中,受電裝置30內置於行動終端機40。以下說明供電裝置10及受電裝置30的具體構成。 As shown in FIG. 1, the contactless power supply system includes a power supply device 10 and a power receiving device 30. In this example, the power receiving device 30 is built in the mobile terminal device 40. The specific configuration of the power supply device 10 and the power receiving device 30 will be described below.
如圖2所示,供電裝置10係由平板狀的筐體5所包覆。筐體5的頂面形成有用來設置行動終端機40的供電面6。 As shown in FIG. 2, the power supply device 10 is covered by a flat casing 5. A power supply surface 6 for arranging the mobile terminal 40 is formed on the top surface of the casing 5.
供電裝置10的內部配置有24組線圈群,遍佈於供電面6整區。線圈群包含供電用線圈L1及1次側異物偵測用線圈L2。線圈群例如在供電面6配置成4行×6列的矩陣狀。 The power supply device 10 is internally provided with 24 sets of coil groups, which are spread over the entire area of the power supply surface 6. The coil group includes a power supply coil L1 and a primary side foreign object detecting coil L2. The coil group is arranged in a matrix of 4 rows × 6 columns, for example, on the power feeding surface 6.
如圖1所示,供電裝置10包含單一共通單元11與連接於該共通單元11的多數(本例中為24個)之供電單元15。 As shown in FIG. 1, the power supply device 10 includes a single common unit 11 and a plurality of power supply units 15 (24 in this example) connected to the common unit 11.
共通單元11包含電源電路13、共通控制電路12與非揮發性記憶體14。 The common unit 11 includes a power supply circuit 13, a common control circuit 12, and a non-volatile memory 14.
記憶體14記憶有受電裝置30所固有的預先註冊之ID號碼。 The memory 14 stores a pre-registered ID number unique to the power receiving device 30.
電源電路13將來自外部電源的交流電轉換成適當的直流電壓,並將該直流電壓供給至各供電單元15及共通單元11作為運作電力。 The power supply circuit 13 converts the alternating current from the external power source into an appropriate direct current voltage, and supplies the direct current voltage to each of the power supply units 15 and the common unit 11 as operating power.
共通控制電路12係利用微電腦構成。共通控制電路12通過給予各供電單元15的各種指令信號而統括控制供電裝置10。 The common control circuit 12 is constituted by a microcomputer. The common control circuit 12 integrally controls the power supply device 10 by giving various command signals to the respective power supply units 15.
供電單元15包含單元控制電路19、激磁驅動電路16、異物偵測用電路21、信號抽出電路17、22以及記憶體24。激磁驅動電路16連接有供電用線圈L1,異物偵測用電路21連接有1次側異物偵測用線圈L2。 The power supply unit 15 includes a unit control circuit 19, an excitation drive circuit 16, a foreign matter detecting circuit 21, signal extracting circuits 17, 22, and a memory 24. The excitation drive circuit 16 is connected to the power supply coil L1, and the foreign matter detecting circuit 21 is connected to the primary foreign object detecting coil L2.
共通控制電路12將意指要求供電的指令信號輸出至各單元控制電路19。單元控制電路19依據來自共通控制電路12的上述指令信號,將意指要求全橋式動作的指令信號輸出至激磁驅動電路16。 The common control circuit 12 outputs a command signal indicating that power is required to be output to each unit control circuit 19. The unit control circuit 19 outputs a command signal indicating that the full-bridge operation is required to the excitation drive circuit 16 in accordance with the above-described command signal from the common control circuit 12.
如圖3所示,激磁驅動電路16包含4個FET(場效電晶體)1H、2H、1L、2L,以及控制各FET之閘極的2個閘極驅動器16a、16b。 As shown in FIG. 3, the excitation drive circuit 16 includes four FETs (Field Effect Transistors) 1H, 2H, 1L, and 2L, and two gate drivers 16a and 16b that control the gates of the respective FETs.
詳細而言,在電源Vdd及接地之間,有2條連接線A1、A2並聯連接。兩連接線A1、A2在圖中左右方向位於相向位置,且經由往左右方向延伸的連接線A3相連接。以下將兩連接線A1、A2中,比連接線A3更上側稱為Hi側,比連接線A3更下側稱為Lo側。連接線A1中的Hi側連接有FET1H的源極端子及汲極端子,連接線A1中的Lo側連接有FET1L的源極端子及汲極端子。連接線A2中的Hi側連接有FET2H的源極端子及汲極端子,連接 線A2中的Lo側連接有FET2L的源極端子及汲極端子。連接線A3串聯連接有供電用線圈L1及電容C。 Specifically, between the power source Vdd and the ground, two connection lines A1 and A2 are connected in parallel. The two connecting lines A1 and A2 are located at opposite positions in the left-right direction in the drawing, and are connected via a connecting line A3 extending in the left-right direction. Hereinafter, among the two connection lines A1 and A2, the upper side of the connection line A3 is referred to as the Hi side, and the lower side of the connection line A3 is referred to as the Lo side. The source terminal and the NMOS terminal of the FET 1H are connected to the Hi side of the connection line A1, and the source terminal and the NMOS terminal of the FET 1L are connected to the Lo side of the connection line A1. The source side and the 汲 terminal of the FET 2H are connected to the Hi side of the connection line A2, and are connected. The source terminal and the NMOS terminal of the FET 2L are connected to the Lo side of the line A2. The power supply coil L1 and the capacitor C are connected in series to the connection line A3.
第1閘極驅動器16a連接於2個FET1H、1L的閘極端子。又,第2閘極驅動器16b連接於2個FET2H、2L的閘極端子。兩閘極驅動器16a、16b係將Hi位準或Lo位準的信號輸出各FET1H、2H、1L、2L的閘極端子。各FET1H、2H、1L、2L接收到Hi位準的信號時,成為導通狀態,將源極端子與汲極端子之間予以導通。又,各FET1H、2H、1L、2L接收到Lo位準的信號時,成為切斷狀態,將源極端子與汲極端子之間予以阻斷。另,未接收到任何信號時,各FET係切斷狀態。 The first gate driver 16a is connected to the gate terminals of the two FETs 1H and 1L. Further, the second gate driver 16b is connected to the gate terminals of the two FETs 2H and 2L. The two gate drivers 16a and 16b output signals of Hi level or Lo level to the gate terminals of the FETs 1H, 2H, 1L, and 2L. When the FETs 1H, 2H, 1L, and 2L receive the signal of the Hi level, they are turned on, and the source terminal and the gate terminal are turned on. Further, when the FETs 1H, 2H, 1L, and 2L receive the signal of the Lo level, they are turned off, and the source terminal and the gate terminal are blocked. In addition, when no signal is received, each FET is turned off.
兩閘極驅動器16a、16b依據來自單元控制電路19之意指要求全橋式動作的指令信號而進行全橋式動作。全橋式動作中,兩閘極驅動器16a、16b切換各FET1H、2H、1L、2L的導通切斷狀態,使得2個FET1H、2L之組合、2個FET1L、2H之組合同步。如圖4所示,在將Hi位準的信號輸出至2個FET1H、2L的期間,將Lo位準的信號輸出至其他2個FET1L、2H。另一方面,在將Hi位準的信號輸出至其他2個FET1L、2H的期間,將2個FET1H、2L輸出至Lo位準的信號。全橋式動作中,設定有將Lo位準的信號輸出至全部之FET1H、2H、1L、2L的失效時間t1。 The two gate drivers 16a, 16b perform a full bridge operation in accordance with a command signal from the unit control circuit 19 that requires full bridge operation. In the full-bridge operation, the two gate drivers 16a and 16b switch the on-off states of the FETs 1H, 2H, 1L, and 2L, and the combination of the two FETs 1H and 2L and the combination of the two FETs 1L and 2H are synchronized. As shown in FIG. 4, while the Hi level signal is output to the two FETs 1H and 2L, the Lo level signal is output to the other two FETs 1L and 2H. On the other hand, while the Hi level signal is output to the other two FETs 1L and 2H, the two FETs 1H and 2L are output to the Lo level signal. In the full-bridge operation, a failure time t1 at which the signal of the Lo level is output to all of the FETs 1H, 2H, 1L, and 2L is set.
如圖3所示,互相位於對角線上的2個FET1H、2L成為導通狀態時,其他2個FET1L、2H成為切斷狀態。此時,來自電源Vdd的電流經由FET1H、供電用線圈L1、電容C及FET2L而流至接地。並且,在其他2個FET1L、2H成為導通狀態的同時,2個FET1H、2L成為切斷狀態。在此狀態下,來自電源Vdd的電流經由FET2H、電容C、供電用線圈L1及FET1L而流至接地。如此,藉由切換各FET1H、2H、1L、2L的導通切斷狀態,而將高頻電流供給至供電用線圈L1。所以,供電用線圈L1受到激磁,來自供電用線圈L1的磁通產生變化。此全橋式動作之供電效率高於後述的半橋式動作之供電效率。所以,全橋式動作適合於供電。 As shown in FIG. 3, when the two FETs 1H and 2L located on the diagonal line are in an on state, the other two FETs 1L and 2H are turned off. At this time, the current from the power supply Vdd flows to the ground via the FET 1H, the power supply coil L1, the capacitor C, and the FET 2L. Further, while the other two FETs 1L and 2H are in an on state, the two FETs 1H and 2L are turned off. In this state, the current from the power supply Vdd flows to the ground via the FET 2H, the capacitor C, the power supply coil L1, and the FET 1L. In this manner, by switching the on-off state of each of the FETs 1H, 2H, 1L, and 2L, the high-frequency current is supplied to the power supply coil L1. Therefore, the power supply coil L1 is excited, and the magnetic flux from the power supply coil L1 changes. The power supply efficiency of this full bridge operation is higher than the power supply efficiency of the half bridge operation described later. Therefore, the full bridge action is suitable for power supply.
又,在失效時間t1中,全部的FET1H、2H、1L、2L成為切 斷狀態。所以,在將2個FET1H、2L的導通切斷狀態,與其他2個FET1L、2H的導通切斷狀態進行切換時,錯開切換時序,藉以抑制例如有貫穿電流從電源Vdd經由2個FET1H、FET1L而流至接地。 Moreover, in the failure time t1, all of the FETs 1H, 2H, 1L, and 2L are cut. Broken state. Therefore, when the on-off state of the two FETs 1H and 2L is switched to the on-off state of the other two FETs 1L and 2H, the switching timing is shifted, thereby suppressing, for example, a through current from the power supply Vdd via the two FETs 1H and FET1L. And flow to ground.
另,2個FET1H,2H相當於電源側開關元件,2個FET1L、2L相當於接地側開關元件。 Further, the two FETs 1H and 2H correspond to the power source side switching elements, and the two FETs 1L and 2L correspond to the ground side switching elements.
如圖3所示,供電用線圈L1及電容C間設有信號抽出電路17。此信號抽出電路17包含電流偵測電路27、包跡檢測電路25以及波形整形電路26。 As shown in FIG. 3, a signal extraction circuit 17 is provided between the power supply coil L1 and the capacitor C. The signal extracting circuit 17 includes a current detecting circuit 27, an envelope detecting circuit 25, and a waveform shaping circuit 26.
電流偵測電路27連接於供電用線圈L1與電容C之間。電流偵測電路27偵測供電用線圈L1與電容C之間流通的電流,將該偵測結果輸出至包跡檢測電路25。包跡檢測電路25對於來自電流偵測電路27的信號之波形進行包跡檢測,將該檢波信號輸出至波形整形電路26。波形整形電路26係以濾波器及增幅器等構成。波形整形電路26藉由去除檢波信號中的雜訊及進行信號增幅來對於信號的波形予以整形,並將該整形的信號輸出至單元控制電路19。 The current detecting circuit 27 is connected between the power feeding coil L1 and the capacitor C. The current detecting circuit 27 detects the current flowing between the power supply coil L1 and the capacitor C, and outputs the detection result to the envelope detecting circuit 25. The envelope detecting circuit 25 performs envelope detection on the waveform of the signal from the current detecting circuit 27, and outputs the detected signal to the waveform shaping circuit 26. The waveform shaping circuit 26 is constituted by a filter, an amplifier, and the like. The waveform shaping circuit 26 shapes the waveform of the signal by removing noise in the detection signal and performing signal amplification, and outputs the shaped signal to the unit control circuit 19.
其次說明偵測供電面6是否有物體存在的存在偵測。 Next, it is explained that the presence detection of the presence of an object is detected on the power supply surface 6.
共通控制電路12對於非供電中的多數之供電單元15依照次序發送意指要求執行存在偵測之指令信號。單元控制電路19接收到此指令信號時,將意指要求半橋式動作之指令信號輸出至激磁驅動電路16。激磁驅動電路16(兩閘極驅動器16a、16b)接收到此指令信號時,經由半橋式動作將高頻電流供給至供電用線圈L1。 The common control circuit 12 transmits, in order for the power supply unit 15 of the non-power supply, an instruction signal requesting execution of the presence detection. When the unit control circuit 19 receives the command signal, it outputs a command signal indicating that the half bridge operation is required to the excitation drive circuit 16. When the excitation drive circuit 16 (the two gate drivers 16a and 16b) receives this command signal, the high-frequency current is supplied to the power supply coil L1 via the half bridge operation.
詳細而言如圖5所示,在半橋式動作時,第2閘極驅動器16b經常將Lo位準的信號輸出至FET2H,並將經常Hi位準的信號輸出至FET2L。又,第1閘極驅動器16a在將Hi位準的信號輸出至FET1H期間係將Lo位準的信號輸出至FET1L,在將Hi位準的信號輸出至FET1L期間係將Lo位準的信號輸出至FET1H。第1閘極驅動器16a在半橋式動作中亦使用與上述全橋式動作相同的週期T1輸出Hi位準及Lo位準的信號。其中,於半橋式動作係將輸出至FET1L的信號之負載比設定在超過50%之值。所以,FET1L 成為導通狀態的時間,長於FET1H成為導通狀態的時間。在半橋式動作時中,亦設定有將Lo位準的信號輸出至全部之FET1H、2H、1L、2L的失效時間t1。 Specifically, as shown in FIG. 5, in the half bridge operation, the second gate driver 16b often outputs a signal of the Lo level to the FET 2H, and outputs a signal of the current Hi level to the FET 2L. Further, the first gate driver 16a outputs a signal of the Lo level to the FET 1L while outputting the signal of the Hi level to the FET 1H, and outputs a signal of the Lo level to the signal of the Hi level when the signal of the Hi level is output to the FET 1L. FET1H. The first gate driver 16a also outputs a signal of the Hi level and the Lo level in the same period T1 as the full bridge operation in the half bridge operation. Among them, in the half bridge type operation, the duty ratio of the signal output to the FET 1L is set to a value exceeding 50%. So, FET1L The time to be in the on state is longer than the time in which the FET 1H is turned on. In the half bridge operation, a failure time t1 at which the signal of the Lo level is output to all of the FETs 1H, 2H, 1L, and 2L is also set.
如圖6所示,於存在偵測時時,FET2H成為經常切斷狀態,FET2L成為經常導通狀態。並且,2個FET1H、1L的導通切斷狀態係交互地切換。FET1H成為導通狀態而FET1L成為切斷狀態時,來自電源Vdd的電流經由FET1H、供電用線圈L1、電容C及FET2L而流至接地。其後,與FET1H切換成切斷狀態同時,當FET1L切換成導通狀態時,供電用線圈L1產生反電動勢。其伴隨電流經由電容C、供電用線圈L1及FET1L而流至接地。如此,藉由切換2個FET1H、1L的導通切斷狀態,將高頻電流供給至供電用線圈L1。此半橋式動作係將來自電源Vdd的電力供給至供電用線圈L1的時間限於FET1H成為導通狀態的期間。因此,在半橋式動作中,藉由將輸出至FET1L的信號(Hi位準)之負載比增加,可縮短從電源Vdd將電力供給至供電用線圈L1的時間。所以,可使半橋式動作中的耗電量比上述全橋式動作低。 As shown in FIG. 6, when there is detection, the FET 2H is always turned off, and the FET 2L is always turned on. Further, the on-off states of the two FETs 1H and 1L are alternately switched. When the FET 1H is turned on and the FET 1L is turned off, the current from the power supply Vdd flows to the ground via the FET 1H, the power supply coil L1, the capacitor C, and the FET 2L. Thereafter, the FET 1H is switched to the off state, and when the FET 1L is switched to the on state, the power supply coil L1 generates a counter electromotive force. The accompanying current flows to the ground via the capacitor C, the power supply coil L1, and the FET 1L. In this manner, by switching the on-off state of the two FETs 1H and 1L, the high-frequency current is supplied to the power supply coil L1. In the half bridge operation, the time during which the power from the power supply Vdd is supplied to the power supply coil L1 is limited to a period in which the FET 1H is turned on. Therefore, in the half bridge operation, by increasing the duty ratio of the signal (Hi level) output to the FET 1L, the time for supplying power from the power supply Vdd to the power supply coil L1 can be shortened. Therefore, the power consumption in the half bridge operation can be made lower than the above-described full bridge operation.
又,半橋式動作中的供電用線圈L1所產生的磁能亦變成比上述全橋式動作小。所以,即使是互相靠近的2個供電用線圈L1在進行供電及存在偵測之情況,伴隨著存在偵測而來自供電用線圈L1的磁能,與伴隨著供電而來自供電用線圈L1的磁能相干涉亦會被抑制。藉此,抑制伴隨著供電而從供電用線圈L1向受電裝置30的供電效率受到存在偵測所降低。 Further, the magnetic energy generated by the power supply coil L1 in the half bridge operation is also smaller than the above-described full bridge type operation. Therefore, even when the two power supply coils L1 that are close to each other are supplied with power and detected, the magnetic energy from the power supply coil L1 is detected along with the magnetic energy from the power supply coil L1 accompanying the power supply. Interference will also be suppressed. As a result, the power supply efficiency from the power supply coil L1 to the power receiving device 30 due to the power supply is suppressed from being reduced by the presence detection.
又,失效時間t1中,2個FET1H、1L成為切斷狀態。所以,切換2個FET1H、1L的導通切斷狀態時,錯開切換時序,藉以抑制例如有貫穿電流從電源Vdd經由FET1H、FET1L而流至接地。 Further, in the failure time t1, the two FETs 1H and 1L are turned off. Therefore, when the ON/OFF states of the two FETs 1H and 1L are switched, the switching timing is shifted, and for example, the through current flows from the power supply Vdd to the ground via the FET 1H and the FET 1L.
單元控制電路19藉由半橋式動作而將高頻電流供給至供電用線圈L1,並依據此時的信號抽出電路17之偵測結果,偵測供電用線圈L1的周邊是否有物體存在。例如,供電用線圈L1附近有物體存在時,成為供電用線圈L1與物體磁性結合的狀態,供電用線圈L1的阻抗增加。因此,供電用線圈L1上流通的電流減少。 當單元控制電路19依據來自信號抽出電路17的電壓位準(存在偵測位準),判斷供電用線圈L1的電流未滿閾值時,則判斷供電用線圈L1的周邊有物體存在。又,單元控制電路19依據來自信號抽出電路17的電壓位準,判斷供電用線圈L1的電流在閾值以上時,則判斷供電用線圈L1的周邊無物體存在。單元控制電路19將存在偵測結果輸出至共通控制電路12。共通控制電路12經由存在偵測而只對於有受電裝置30(正確而言係其受電用線圈L3)存在的區域之供電用線圈L1進行激磁。 The unit control circuit 19 supplies a high-frequency current to the power supply coil L1 by the half bridge operation, and detects whether or not an object exists around the power supply coil L1 based on the detection result of the signal extraction circuit 17 at this time. For example, when an object exists in the vicinity of the power supply coil L1, the power supply coil L1 is magnetically coupled to the object, and the impedance of the power supply coil L1 is increased. Therefore, the current flowing through the power supply coil L1 is reduced. When the unit control circuit 19 determines that the current of the power supply coil L1 is less than the threshold value in accordance with the voltage level (the detection level) from the signal extraction circuit 17, it is determined that an object exists around the power supply coil L1. Further, when the unit control circuit 19 determines that the current of the power supply coil L1 is equal to or higher than the threshold value based on the voltage level from the signal extraction circuit 17, it is determined that there is no object in the vicinity of the power supply coil L1. The unit control circuit 19 outputs the presence detection result to the common control circuit 12. The common control circuit 12 excites only the power supply coil L1 in the region where the power receiving device 30 (correctly, the power receiving coil L3) exists, via the presence detection.
另,單元控制電路19、信號抽出電路17及供電用線圈L1相當於存在偵測部。 Further, the unit control circuit 19, the signal extracting circuit 17, and the power feeding coil L1 correspond to the presence detecting unit.
又,單元控制電路19依據供電時(全橋式動作時)的信號抽出電路17之偵測結果,對於供電對象即受電裝置30是否係正規產品進行認證。在此,供給至供電用線圈L1的高頻信號之振幅,藉由受電裝置30所致的後述負載調變,在每個既定的週期於2值間改變。此振幅係因應於受電裝置30所致的負載調變而因應於ID資訊在2值間改變。 Further, the unit control circuit 19 authenticates whether or not the power receiving device 30 is a regular product based on the detection result of the signal extraction circuit 17 at the time of power supply (when the full-bridge operation is performed). Here, the amplitude of the high-frequency signal supplied to the power supply coil L1 is modulated by the power receiving device 30 to be described later, and is changed between two values for each predetermined period. This amplitude is varied in accordance with the ID information in response to the load modulation caused by the power receiving device 30.
單元控制電路19依據來自信號抽出電路17的電壓位準而辨識ID資訊,將該ID資訊與記憶體24所預先記憶的ID資訊相比對。單元控制電路19將ID比對的成否輸出至共通控制電路12。 The unit control circuit 19 recognizes the ID information based on the voltage level from the signal extraction circuit 17, and compares the ID information with the ID information previously memorized by the memory 24. The unit control circuit 19 outputs the success or failure of the ID comparison to the common control circuit 12.
共通控制電路12在判斷ID比對成立時繼續進行供電。另一方面,共通控制電路12在ID比對不成立則判斷並非正規的受電裝置30而停止供電。 The common control circuit 12 continues to supply power when it is determined that the ID comparison is established. On the other hand, the common control circuit 12 determines that the power receiving device 30 is not normal and stops supplying power when the ID comparison is not established.
其次說明偵測供電面6與受電裝置30之間是否有金屬等異物存在之異物偵測。 Next, the detection of foreign matter in the presence of foreign matter such as metal between the power supply surface 6 and the power receiving device 30 will be described.
如圖1所示,單元控制電路19依據來自共通控制電路12的意指要求異物偵測之指令信號來控制控制異物偵測用電路21的動作。具體而言,異物偵測用電路21係與激磁驅動電路16同樣地將高頻電流供給至1次側異物偵測用線圈L2。因此,1次側異物偵測用線圈L2受到激磁。另,供電用線圈L1及1次側異物偵測用線圈L2係以不同頻率進行激磁。 As shown in FIG. 1, the unit control circuit 19 controls the operation of the foreign object detecting circuit 21 in accordance with a command signal from the common control circuit 12 that requires foreign matter detection. Specifically, the foreign matter detecting circuit 21 supplies a high-frequency current to the primary foreign object detecting coil L2 in the same manner as the excitation driving circuit 16 . Therefore, the primary foreign object detecting coil L2 is excited. Further, the power supply coil L1 and the primary foreign object detecting coil L2 are excited at different frequencies.
1次側異物偵測用線圈L2的高頻電流之振幅,藉由受電裝置30所致的後述負載調變,在每個既定週期於2值間改變。例如,當1次側異物偵測用線圈L2及受電裝置30(2次側異物偵測用線圈L4)間有金屬等異物存在時,加長振幅在2值間改變的週期。信號抽出電路22係與上述信號抽出電路17同樣方式構成。所以,信號抽出電路22因應於在2值間改變的振幅而產生由Hi位準或Lo位準構成的檢波信號。單元控制電路19依據來自上述信號抽出電路22的檢波信號之週期判斷有無異物。單元控制電路19將關於有無異物之判斷結果輸出至共通控制電路12。共通控制電路12於判斷有異物存在時不執行供電,於判斷無異物存在時執行供電。 The amplitude of the high-frequency current of the primary foreign object detecting coil L2 is modulated by the power receiving device 30, and is changed between two values for each predetermined period. For example, when there is a foreign matter such as metal between the primary foreign object detecting coil L2 and the power receiving device 30 (the secondary foreign object detecting coil L4), the period in which the amplitude changes between the two values is lengthened. The signal extracting circuit 22 is configured in the same manner as the signal extracting circuit 17 described above. Therefore, the signal extracting circuit 22 generates a detection signal composed of the Hi level or the Lo level in response to the amplitude changed between the two values. The unit control circuit 19 determines the presence or absence of foreign matter based on the period of the detection signal from the signal extraction circuit 22. The unit control circuit 19 outputs a judgment result regarding the presence or absence of foreign matter to the common control circuit 12. The common control circuit 12 does not perform power supply when it is judged that there is a foreign matter, and performs power supply when it is judged that no foreign matter exists.
單元控制電路19未進行供電及存在偵測時,激磁驅動電路16為待命狀態。詳細而言,如圖7所示,各閘極驅動器16a、16b將Hi位準的信號只輸出至FET2L,並將Lo位準的信號輸出至其他3個FET1H、2H、1L。因此,只有FET2L成為導通狀態,其他3個FET1H、2H、1L成為切斷狀態。此即待命狀態。待命狀態中,供電用線圈L1係與電源Vdd成為電性阻斷。因此,例如電源Vdd側有低阻抗的電路存在時,依據來自位於特定供電用線圈L1周邊的供電用線圈L1之磁能,抑制特定供電用線圈L1所感應的電流流進上述電路方向。再者,藉由使FET1L成為切斷狀態,抑制經由FET2L、供電用線圈L1及FET1L而產生回生電流。如此,在待命狀態僅使FET2L成為導通狀態,可抑制與位於周邊的供電用線圈L1之磁性結合。又,位於此周邊的供電用線圈L1進行供電時,磁性結合受到,可抑制該供電用線圈L1的供電效率降低。又,位於此周邊的供電用線圈L1進行存在偵測時,抑制存在偵測的精度降低。 When the unit control circuit 19 is not powered and there is detection, the excitation drive circuit 16 is in a standby state. Specifically, as shown in FIG. 7, each of the gate drivers 16a and 16b outputs a signal of Hi level only to the FET 2L, and outputs a signal of the Lo level to the other three FETs 1H, 2H, and 1L. Therefore, only the FET 2L is turned on, and the other three FETs 1H, 2H, and 1L are turned off. This is the standby state. In the standby state, the power supply coil L1 and the power supply Vdd are electrically blocked. Therefore, for example, when a circuit having a low impedance on the power supply Vdd side exists, the current induced by the specific power supply coil L1 flows into the circuit direction in accordance with the magnetic energy from the power supply coil L1 located around the specific power supply coil L1. Further, by turning off the FET 1L, the regenerative current is generated via the FET 2L, the power supply coil L1, and the FET 1L. In this manner, only the FET 2L is turned on in the standby state, and magnetic coupling with the power supply coil L1 located in the periphery can be suppressed. Moreover, when the power supply coil L1 located in the periphery is supplied with power, magnetic coupling is received, and the power supply efficiency of the power supply coil L1 can be suppressed from being lowered. Further, when the power supply coil L1 located at the periphery of the power supply detects presence, it is suppressed that the accuracy of detection is lowered.
如圖1所示,受電裝置30包含:整流電路31、受電用線圈L3、2次側控制電路33以及DC/DC轉換器35。 As shown in FIG. 1, the power receiving device 30 includes a rectifier circuit 31, a power receiving coil L3, a secondary side control circuit 33, and a DC/DC converter 35.
受電用線圈L3藉由來自供電用線圈L1的磁通變化而感應交 流電力。整流電路31對於受電用線圈L3所感應的交流電力進行整流。DC/DC轉換器35將來自整流電路31的直流電壓轉換成適合行動終端機40運作之值。此直流電壓系例如用於行動終端機40的運作電源即2次電池(省略圖示)之充電。 The power receiving coil L3 is inductively changed by the magnetic flux change from the power supply coil L1. Streaming electricity. The rectifier circuit 31 rectifies the AC power induced by the power receiving coil L3. The DC/DC converter 35 converts the DC voltage from the rectifier circuit 31 into a value suitable for the operation of the mobile terminal 40. This DC voltage is used, for example, for charging a secondary battery (not shown), which is an operating power source of the mobile terminal unit 40.
2次側控制電路33係以微電腦構成。2次側控制電路33從整流電路31接收一部分的電力,並藉由該電力而運作。 The secondary side control circuit 33 is constituted by a microcomputer. The secondary side control circuit 33 receives a part of the electric power from the rectifying circuit 31 and operates by the electric power.
又,受電裝置30包含:2次側異物偵測用線圈L4、整流電路36、複振器37、負載38以及電晶體39,並進行用以異物偵測之負載調變。 Further, the power receiving device 30 includes a secondary side foreign matter detecting coil L4, a rectifying circuit 36, a oscillating device 37, a load 38, and a transistor 39, and performs load modulation for foreign matter detection.
2次側異物偵測用線圈L4連接於整流電路36。又,整流電路36的後段連接有複振器37。並且,2次側異物偵測用線圈L4與接地之間連接有負載38。電晶體39設於負載38及接地之間。詳細而言,電晶體39的射極端子連接有接地。電晶體39的集極端子連接有負載38。電晶體39的基極端子連接複振器37。 The secondary side foreign matter detecting coil L4 is connected to the rectifier circuit 36. Further, a damper 37 is connected to the rear stage of the rectifier circuit 36. Further, a load 38 is connected between the secondary side foreign object detecting coil L4 and the ground. A transistor 39 is provided between the load 38 and ground. In detail, the emitter terminal of the transistor 39 is connected to the ground. A collector 38 is connected to the collector terminal of the transistor 39. The base terminal of the transistor 39 is connected to the damper 37.
2次側異物偵測用線圈L4利用電磁感應從1次側異物偵測用線圈L2接收高頻信號,並將接收的高頻信號輸出至整流電路36。整流電路36對於高頻信號進行整流,並將該整流的信號輸出至複振器37。複振器37依據高頻信號產生由Hi位準及Lo位準重複所構成的脈衝波,將該脈衝波輸出至電晶體39的基極端子。電晶體39依據脈衝波中的Hi位準及Lo位準切換導通切斷狀態。電晶體39位於導通狀態時,2次側異物偵測用線圈L4的一部分電流流至接地。所以,2次側異物偵測用線圈L4的高頻信號之振幅,因應於電晶體39的導通切斷狀態而在每個固定週期於2值間改變。伴隨於此,1次側異物偵測用線圈L2的高頻信號之振幅亦在每個固定週期於2值間改變(負載調變)。 The secondary side foreign object detecting coil L4 receives a high frequency signal from the primary side foreign object detecting coil L2 by electromagnetic induction, and outputs the received high frequency signal to the rectifier circuit 36. The rectifier circuit 36 rectifies the high frequency signal and outputs the rectified signal to the oscillating device 37. The damper 37 generates a pulse wave composed of a Hi level and a Lo level repeat based on the high frequency signal, and outputs the pulse wave to the base terminal of the transistor 39. The transistor 39 switches the conduction cut-off state in accordance with the Hi level and the Lo level in the pulse wave. When the transistor 39 is in the on state, a part of the current of the secondary side foreign object detecting coil L4 flows to the ground. Therefore, the amplitude of the high-frequency signal of the secondary side foreign object detecting coil L4 changes between two values for each fixed period in accordance with the on-off state of the transistor 39. Along with this, the amplitude of the high-frequency signal of the primary foreign object detecting coil L2 also changes between two values (load modulation) every fixed period.
1次側異物偵測用線圈L2及2次側異物偵測用線圈L4間有異物存在時,兩異物偵測用線圈L2、L4間傳送接收的高頻信號之振幅變小。因此,複振器37產生的脈衝波之Hi位準及Lo位準的重複週期變長,電晶體39的導通切斷狀態之切換週期變長。因此,兩異物偵測用線圈L2、L4間傳送接收的高頻信號的振幅在2值間 改變的週期變長。所以,如上所述,可在供電裝置10進行異物偵測。 When foreign matter exists between the primary foreign object detecting coil L2 and the secondary foreign object detecting coil L4, the amplitude of the high frequency signal transmitted and received between the two foreign object detecting coils L2 and L4 becomes small. Therefore, the repetition period of the Hi level and the Lo level of the pulse wave generated by the damper 37 becomes long, and the switching period of the ON/OFF state of the transistor 39 becomes long. Therefore, the amplitude of the high-frequency signal transmitted and received between the two foreign object detecting coils L2 and L4 is between two values. The period of change becomes longer. Therefore, as described above, foreign matter detection can be performed on the power supply device 10.
又,受電裝置30包含負載調變電路42以及認證用信號產生電路41,進行負載調變用以認證。此認證用信號產生電路41設於2次側控制電路33。 Further, the power receiving device 30 includes a load modulation circuit 42 and an authentication signal generating circuit 41, and performs load modulation for authentication. This authentication signal generating circuit 41 is provided in the secondary side control circuit 33.
認證用信號產生電路41產生由Hi位準及Lo位準之組合所構成的脈衝波。此Hi位準及Lo位準之組合顯示受電裝置30所固有的ID資訊。 The authentication signal generating circuit 41 generates a pulse wave composed of a combination of a Hi level and a Lo level. The combination of the Hi level and the Lo level displays the ID information inherent to the power receiving device 30.
負載調變電路42係以負載及電晶體等所構成。負載調變電路42因應於來自認證用信號產生電路41的脈衝波之Hi位準及Lo位準,改變受電用線圈L3及供電用線圈L1的高頻信號之振幅(負載調變)。藉此,如上所述,可在供電裝置10進行ID比對。 The load modulation circuit 42 is constituted by a load, a transistor, or the like. The load modulation circuit 42 changes the amplitude (load modulation) of the high-frequency signal of the power receiving coil L3 and the power feeding coil L1 in accordance with the Hi level and the Lo level of the pulse wave from the authentication signal generating circuit 41. Thereby, as described above, the ID comparison can be performed in the power supply device 10.
其次參照圖8的流程圖,說明共通控制電路12的處理順序。該流程圖係美經過固定週期時執行。另,在該流程圖的開始時,供電面6未有任何設置,使激磁驅動電路16成為待命狀態。 Next, the processing sequence of the common control circuit 12 will be described with reference to the flowchart of FIG. The flow chart is executed when the US is in a fixed cycle. Further, at the beginning of the flowchart, the power supply surface 6 is not provided, and the excitation drive circuit 16 is placed in a standby state.
首先,共通控制電路12使多數之供電單元15的多數之激磁驅動電路16依照次序半橋式動作而進行存在偵測(S101)。共通控制電路12判斷未偵測到物體存在時(S102中否),在使激磁驅動電路16回到待命狀態(S103)後結束處理。共通控制電路12判斷偵測到物體存在時(S102中是),進行金屬等異物偵測(S104)。共通控制電路12判斷偵測到異物存在時(S105中是),使激磁驅動電路16回到待命狀態(S103)後結束處理。藉此,可抑制異物受到激磁。 First, the common control circuit 12 causes the majority of the excitation drive circuits 16 of the plurality of power supply units 15 to perform presence detection in accordance with the sequential half-bridge operation (S101). When the common control circuit 12 determines that the presence of an object is not detected (NO in S102), the processing is terminated after the excitation drive circuit 16 is returned to the standby state (S103). When the common control circuit 12 determines that the detected object is present (YES in S102), foreign matter detection such as metal is performed (S104). When the common control circuit 12 determines that the foreign matter is detected (YES in S105), the excitation drive circuit 16 returns to the standby state (S103), and the processing ends. Thereby, it is possible to suppress the foreign matter from being excited.
又,共通控制電路12判斷未偵測到異物存在時(S105中否),使激磁驅動電路16全橋式動作而降型供電(S106)。並且,共通控制電路12判斷ID比對是否成立(S107)。共通控制電路12判斷ID比對不成立時(S107中否),經由激磁驅動電路16停止供電(S108),使激磁驅動電路16回到待命狀態(S103)後結束處理。藉此,能有效防止對於正規受電裝置30以外進行供電。 When the common control circuit 12 determines that no foreign matter is detected (NO in S105), the excitation drive circuit 16 operates in a full-bridge manner to reduce the power supply (S106). Further, the common control circuit 12 determines whether or not the ID comparison is established (S107). When the common control circuit 12 determines that the ID comparison is not established (NO in S107), the power supply is stopped via the excitation drive circuit 16 (S108), and the excitation drive circuit 16 is returned to the standby state (S103), and the processing is terminated. Thereby, it is possible to effectively prevent power supply to the outside of the regular power receiving device 30.
共通控制電路12判斷ID比對成立時(S107中是),進續進行供電(S109)。並且,共通控制電路12在供電中經過固定時間之後, 再度判斷ID比對是否成立(S107)。亦即,在供電中亦定期地執行ID比對。 When the common control circuit 12 determines that the ID comparison is established (YES in S107), the power supply is continuously supplied (S109). And, after the fixed control circuit 12 has passed the fixed time in the power supply, It is judged again whether or not the ID comparison is established (S107). That is, the ID comparison is also performed periodically in the power supply.
以上,依據說明的實施形態,可發揮以下效果。 As described above, according to the embodiment described above, the following effects can be exhibited.
(1)存在偵測時使FET2H成為經常切斷狀態,使FET2L成為經常導通狀態。並且,2個FET1H、1L導通切斷狀態切換(半橋式動作)。此半橋式動作時,從電源Vdd向供電用線圈L1的電力之供給時間,限於FET1H成為導通狀態期間。因此,半橋式動作時的耗電量變得比上述全橋式動作中的耗電量小。伴隨於此,半橋式動作中的供電用線圈L1所產生之磁能亦比全橋式動作中的供電用線圈L1所發的磁能還小。所以,即使互相靠近的多數之供電用線圈L1同時分別進行供電及存在偵測,伴隨著存在偵測而來自供電用線圈L1的磁能,與伴隨著供電而來自供電用線圈L1的磁能相干涉亦會被抑制。因此,可藉由進行存在偵測,抑制靠近設置的多數之供電用線圈L1之供電效降低。 (1) When there is detection, the FET 2H is always turned off, and the FET 2L is always turned on. Further, the two FETs 1H and 1L are turned on and off (half-bridge operation). In the half bridge operation, the supply time of the electric power from the power source Vdd to the power supply coil L1 is limited to the period in which the FET 1H is turned on. Therefore, the power consumption during the half bridge operation becomes smaller than the power consumption in the above full bridge operation. Along with this, the magnetic energy generated by the power supply coil L1 in the half bridge operation is also smaller than the magnetic energy generated by the power supply coil L1 in the full bridge operation. Therefore, even if a plurality of power supply coils L1 that are close to each other simultaneously perform power supply and presence detection, the magnetic energy from the power supply coil L1 accompanying the detection is interfered with the magnetic energy from the power supply coil L1 accompanying the power supply. Will be suppressed. Therefore, by performing the presence detection, it is possible to suppress the power supply efficiency of the plurality of power supply coils L1 that are disposed close to each other.
(2)在供電及存在偵測均未進行的待命狀態中,僅使FET2L成為導通狀態,而使其他3個FET1H、2H、1L成為切斷狀態。在此狀態中,供電用線圈L1係與電源Vdd成為電性阻斷。因此,例如電源Vdd側有低阻抗的電路存在時,依據來自位於特定供電用線圈L1周邊的供電用線圈L1之磁能,抑制特定供電用線圈L1所感應的電流流進上述電路方向。再者,藉由使FET1L成為切斷狀態,抑制經由FET2L、供電用線圈L1及FET1L而產生回生電流。如此,在待命狀態中可藉由僅使FET2L成為導通狀態而抑制與位於周邊的供電用線圈L1之磁性結合。在位於特定供電用線圈L1周邊的供電用線圈L1進行供電時,可抑制該供電用線圈L1的供電效率降低。又,在位於特定供電用線圈L1周邊的供電用線圈L1進行存在偵測時,抑制存在偵測的精度降低。 (2) In the standby state in which neither the power supply nor the presence detection is performed, only the FET 2L is turned on, and the other three FETs 1H, 2H, and 1L are turned off. In this state, the power supply coil L1 is electrically blocked from the power supply Vdd. Therefore, for example, when a circuit having a low impedance on the power supply Vdd side exists, the current induced by the specific power supply coil L1 flows into the circuit direction in accordance with the magnetic energy from the power supply coil L1 located around the specific power supply coil L1. Further, by turning off the FET 1L, the regenerative current is generated via the FET 2L, the power supply coil L1, and the FET 1L. As described above, in the standby state, the magnetic connection with the power supply coil L1 located in the periphery can be suppressed by merely turning on the FET 2L. When power is supplied to the power supply coil L1 located around the specific power supply coil L1, the power supply efficiency of the power supply coil L1 can be suppressed from being lowered. Further, when the power supply coil L1 located around the specific power supply coil L1 performs presence detection, it is suppressed that the detection accuracy is lowered.
(3)在存在偵測中,將使FET1L成為導通狀態的時間設定成:使FET1L成為導通狀態的時間比成為切斷狀態的時間更長。又,使FET1H成為切斷狀態的時間設定成:使FET1H成為切斷狀態的時間比成為導通狀態的時間更長。在半橋式動作中,往供電用 線圈L1的電力供給係限定於FET1L係切斷狀態且FET1H係導通狀態的期間。藉由調節該期間,即可調節半橋式動作時的耗電量。 (3) In the presence detection, the time during which the FET 1L is turned on is set such that the time during which the FET 1L is turned on is longer than the time when the FET 1L is turned off. Further, the time during which the FET 1H is turned off is set such that the time during which the FET 1H is turned off is longer than the time when the FET 1H is turned off. In the half-bridge operation, for power supply The power supply of the coil L1 is limited to a period in which the FET 1L is in the off state and the FET 1H is in the on state. By adjusting the period, the power consumption during the half bridge operation can be adjusted.
(4)可降低伴隨存在偵測而來自供電用線圈L1的磁能。所以,能抑制作為存在偵測的對象的物體受到感應電流而使温度上升。 (4) The magnetic energy from the power supply coil L1 accompanying the presence detection can be reduced. Therefore, it is possible to suppress an object that is a subject of detection from being subjected to an induced current to increase the temperature.
另,上述實施形態可藉由將此適當變更的以下形態進行實施。 Further, the above embodiment can be implemented by the following aspects which are appropriately changed.
‧上述實施形態中,在待命狀態僅使FET2L成為導通狀態,但僅使FET1L成為導通狀態亦能獲得同樣效果。 ‧ In the above embodiment, only the FET 2L is turned on in the standby state, but the same effect can be obtained only by turning on the FET 1L.
再者,待命狀態中亦可使接地側的兩FET1L、2L成為導通狀態,使電源Vdd側的兩FET1H、2H成為切斷狀態。此種情況下亦抑制感應電流流進電源Vdd側。 Further, in the standby state, the two FETs 1L and 2L on the ground side can be turned on, and the two FETs 1H and 2H on the power supply Vdd side can be turned off. In this case, the induced current is also suppressed from flowing into the power supply Vdd side.
‧上述實施形態中,係利用負載調變進行ID比對,但亦可將認證用的2個電路分別設於供電裝置10及受電裝置30,經由無線信號的傳送接收而進行ID比對。又,亦可省略ID比對。此時,可省略認證用信號產生電路41及負載調變電路42。 In the above embodiment, the ID comparison is performed by load modulation. However, the two circuits for authentication may be provided in the power supply device 10 and the power receiving device 30, and the ID may be compared by transmission and reception of the wireless signal. Also, the ID comparison can be omitted. At this time, the authentication signal generating circuit 41 and the load modulation circuit 42 can be omitted.
‧亦可省略上述實施形態中有關異物偵測的構成(異物偵測用電路21、兩異物偵測用線圈L2、L4、整流電路36及複振器37等)。 ‧ The configuration for detecting foreign matter in the above embodiment (the foreign object detecting circuit 21, the two foreign object detecting coils L2, L4, the rectifier circuit 36, the oscillating device 37, and the like) may be omitted.
‧上述實施形態中,受電裝置30係設於行動終端機40,但亦可設於其他電子設備。例如,亦可使受電裝置30相對於電子設備的本體而言係獨立的構成。 In the above embodiment, the power receiving device 30 is provided in the mobile terminal device 40, but may be provided in another electronic device. For example, the power receiving device 30 may be configured to be independent of the body of the electronic device.
‧亦可省略上述實施形態中的單元控制電路19。此時,共通控制電路12亦進行上述實施形態中單元控制電路19所執行的控制。又,亦可使共通控制電路12執行由單元控制電路19所進行的一部份控制,或使單元控制電路19執行由共通控制電路12所進行的一部份控制。 ‧ The unit control circuit 19 in the above embodiment can also be omitted. At this time, the common control circuit 12 also performs the control executed by the unit control circuit 19 in the above embodiment. Further, the common control circuit 12 may be caused to perform a part of the control by the unit control circuit 19, or the unit control circuit 19 may perform a part of the control by the common control circuit 12.
‧上述實施形態中,激磁驅動電路16中採用FET作為開關元件,但亦可使用其他開關元件。 In the above embodiment, the EM drive circuit 16 uses an FET as a switching element, but other switching elements may be used.
‧上述實施形態中,係於半橋式動作將輸出至FET1L的信號(Hi位準)之負載比設定成超過50%之值。但,亦可將此負載比設定成未滿50%。此種情況下,FET1H成為切斷狀態期間亦不會從 電源Vdd往供電用線圈L1供給電力。所以,與上述實施形態同樣半橋式動作的耗電量比起全橋式動作而言更低,並且抑制供電效率降低。 In the above embodiment, the load ratio of the signal (Hi level) output to the FET 1L is set to a value exceeding 50% in the half bridge operation. However, the duty ratio can also be set to less than 50%. In this case, the FET1H will not be turned off during the off state. The power supply Vdd supplies electric power to the power supply coil L1. Therefore, the power consumption of the half bridge operation in the same manner as in the above embodiment is lower than that of the full bridge operation, and the power supply efficiency is suppressed from being lowered.
‧上述實施形態致中,供電用線圈L1及電容C係串聯連接,但供電用線圈L1及電容C亦可係並聯連接。又,亦可省略電容C。 In the above embodiment, the power supply coil L1 and the capacitor C are connected in series, but the power supply coil L1 and the capacitor C may be connected in parallel. Also, the capacitor C can be omitted.
‧上述實施形態中,亦可於進行存在偵測時同時進行金屬偵測。如上所述進行存在偵測時,偵測伴隨著置於供電面6的物體之存在所致的阻抗變化而來的供電用線圈L1之電流變化。例如,將具有受電用線圈L3的受電裝置30設置於供電面6時,因為從供電用線圈L1觀察的2次側負載變大,所以在供電用線圈L1上流通的電流值變小,來自信號抽出電路17的電壓位準(存在偵測位準)變小。又,將金屬設置於供電面6時,因為從供電用線圈L1觀察的2次側負載變小,所以比起上述設置有受電裝置30之情況而言,在供電用線圈L1上流通的電流值以及存在偵測位準變高。金屬偵測中,負載特性依據金屬的種類或尺寸等而異,存在偵測位準變成與對應供電用線圈L1的供電面6未有任何設置之狀態不同之值。存在偵測位準因應設於供電面6的物體有無及種類,而存在有例如以下的大小關係。 ‧ In the above embodiment, metal detection can also be performed simultaneously when detecting presence. When the presence detection is performed as described above, the current change of the power supply coil L1 due to the impedance change due to the presence of the object placed on the power supply surface 6 is detected. For example, when the power receiving device 30 having the power receiving coil L3 is placed on the power feeding surface 6, the secondary side load observed from the power feeding coil L1 is increased, so that the current value flowing through the power feeding coil L1 is small, and the signal is received. The voltage level (the presence detection level) of the extraction circuit 17 becomes small. In addition, when the metal is placed on the power supply surface 6, the secondary side load observed from the power supply coil L1 is reduced, so that the current value flowing through the power supply coil L1 is larger than the case where the power receiving device 30 is provided as described above. And the presence detection level becomes higher. In the metal detection, the load characteristics differ depending on the type or size of the metal, and the detection level becomes a value different from the state in which the power supply surface 6 of the corresponding power supply coil L1 is not provided. There is a magnitude relationship between the detection level and the type of the object provided on the power supply surface 6, for example, the following.
「有受電裝置30<無受電裝置30(無負載)<有金屬」 "There is a power receiving device 30<No power receiving device 30 (no load) <With metal"
考慮此大小關係來考慮來設定多數之閾值。藉此,單元控制電路19可經由存在偵測位準與各閾值之比較,於存在偵測時進行金屬偵測。如此,不使用1次側異物偵測用線圈L2及2次側異物偵測用線圈L4等異物偵測電路即可進行金屬偵測,所以可省略上述實施形態中用以進行金屬等異物偵測之構成,亦即異物偵測用電路21、信號抽出電路22、線圈L2、L4、整流電路36、複振器37等。藉此,能更簡單地構成非接觸式供電系統。 Consider this size relationship to consider setting the majority threshold. Thereby, the unit control circuit 19 can perform metal detection when there is detection via the presence detection level and the comparison of the threshold values. In this way, the metal detection can be performed without using the foreign matter detecting circuit such as the primary foreign object detecting coil L2 and the secondary foreign object detecting coil L4, so that the above-described embodiment can be omitted for detecting foreign matter such as metal. The configuration is the foreign matter detecting circuit 21, the signal extracting circuit 22, the coils L2 and L4, the rectifying circuit 36, the oscillating device 37, and the like. Thereby, the contactless power supply system can be constructed more simply.
另,就金屬的種類而言,考慮有銅、鋁、鐵及不鏽鋼等。金屬種類不同時,存在偵測位準依據供電用線圈L1之結合度等差異而改變。因此,金屬偵測之閾值必須因應金屬種類來決定。 In addition, in terms of the type of metal, copper, aluminum, iron, stainless steel, and the like are considered. When the metal types are different, the detection level changes depending on the difference in the degree of bonding of the power supply coil L1. Therefore, the threshold for metal detection must be determined by the type of metal.
又,亦能於有不同負載的多數2次機器(例如行動終端機40) 存在時,依據存在偵測位準而偵測出係何種2次機器。 Also, it can be used in most secondary machines with different loads (for example, mobile terminal 40) When present, it is detected which two-time machine is based on the presence of the detection level.
1H、1L、2H、2L‧‧‧FET(場效電晶體) 1H, 1L, 2H, 2L‧‧‧FET (Field Effect Transistor)
5‧‧‧筐體 5‧‧‧Shell
6‧‧‧供電面 6‧‧‧Power supply surface
10‧‧‧供電裝置 10‧‧‧Power supply unit
11‧‧‧共通單元 11‧‧‧Common unit
12‧‧‧共通控制電路 12‧‧‧Common control circuit
13‧‧‧電源電路 13‧‧‧Power circuit
14‧‧‧記憶體 14‧‧‧ memory
15‧‧‧供電單元 15‧‧‧Power supply unit
16‧‧‧激磁驅動電路 16‧‧‧Excitation drive circuit
16a‧‧‧第1閘極驅動器 16a‧‧‧1st gate driver
16b‧‧‧第2閘極驅動器 16b‧‧‧2nd gate driver
17、22‧‧‧信號抽出電路 17, 22‧‧‧ signal extraction circuit
19‧‧‧單元控制電路 19‧‧‧Unit control circuit
21‧‧‧異物偵測用電路 21‧‧‧ Foreign object detection circuit
24‧‧‧記憶體 24‧‧‧ memory
25‧‧‧包跡檢測電路 25‧‧‧Envelope detection circuit
26‧‧‧波形整形電路 26‧‧‧ Wave shaping circuit
27‧‧‧電流偵測電路 27‧‧‧ Current detection circuit
30‧‧‧受電裝置 30‧‧‧Power-receiving device
31‧‧‧整流電路 31‧‧‧Rectifier circuit
33‧‧‧控制電路(2次側控制電路) 33‧‧‧Control circuit (2nd side control circuit)
35‧‧‧DC/DC轉換器 35‧‧‧DC/DC converter
36‧‧‧整流電路 36‧‧‧Rectifier circuit
37‧‧‧複振器 37‧‧‧Resonator
38‧‧‧負載 38‧‧‧load
39‧‧‧電晶體 39‧‧‧Optoelectronics
40‧‧‧行動終端機 40‧‧‧Mobile terminal
41‧‧‧認證用信號產生電路 41‧‧‧Signal generation circuit for authentication
42‧‧‧負載調變電路 42‧‧‧Load modulation circuit
A1~A3‧‧‧連接線 A1~A3‧‧‧ connection line
Vdd‧‧‧電源 Vdd‧‧‧ power supply
C‧‧‧電容 C‧‧‧ capacitor
L1‧‧‧供電用線圈 L1‧‧‧Power supply coil
L2‧‧‧1次側異物偵測用線圈 L2‧‧‧1 side foreign body detection coil
L3‧‧‧受電用線圈 L3‧‧‧Power coil
L4‧‧‧2次側異物偵測用線圈 L4‧‧‧2 side foreign body detection coil
圖1係非接觸式供電系統之構成圖。 Figure 1 is a block diagram of a contactless power supply system.
圖2係供電裝置之立體圖。 2 is a perspective view of a power supply device.
圖3係激磁驅動電路及信號抽出電路之構成圖。 Fig. 3 is a view showing the configuration of an excitation drive circuit and a signal extraction circuit.
圖4係供電時(全橋式動作時)輸出至各FET的信號之波形圖。 Fig. 4 is a waveform diagram of signals outputted to the respective FETs during power supply (when fully bridged).
圖5係存在偵測時(半橋式動作時)輸出至各FET信號之波形圖。 Fig. 5 is a waveform diagram of signals outputted to respective FETs during detection (half-bridge operation).
圖6係激磁驅動電路及信號抽出電路之構成圖。 Fig. 6 is a view showing the configuration of an excitation drive circuit and a signal extraction circuit.
圖7係待命時輸出至各FET的信號之波形圖。 Fig. 7 is a waveform diagram of signals outputted to the respective FETs when standby.
圖8係顯示共通控制電路的處理順序之流程圖。 Fig. 8 is a flow chart showing the processing sequence of the common control circuit.
1H、1L、2H、2L‧‧‧FET(場效電晶體) 1H, 1L, 2H, 2L‧‧‧FET (Field Effect Transistor)
16‧‧‧激磁驅動電路 16‧‧‧Excitation drive circuit
16a‧‧‧第1閘極驅動器 16a‧‧‧1st gate driver
16b‧‧‧第2閘極驅動器 16b‧‧‧2nd gate driver
17‧‧‧信號抽出電路 17‧‧‧Signal extraction circuit
19‧‧‧單元控制電路 19‧‧‧Unit control circuit
25‧‧‧包跡檢測電路 25‧‧‧Envelope detection circuit
26‧‧‧波形整形電路 26‧‧‧ Wave shaping circuit
27‧‧‧電流偵測電路 27‧‧‧ Current detection circuit
A1~A3‧‧‧連接線 A1~A3‧‧‧ connection line
Vdd‧‧‧電源 Vdd‧‧‧ power supply
C‧‧‧電容 C‧‧‧ capacitor
L1‧‧‧供電用線圈 L1‧‧‧Power supply coil
Claims (5)
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JP2011157005A JP2013027076A (en) | 2011-07-15 | 2011-07-15 | Non-contact power supply device |
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TW201315081A true TW201315081A (en) | 2013-04-01 |
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JP5857251B2 (en) | 2011-08-01 | 2016-02-10 | パナソニックIpマネジメント株式会社 | Non-contact power feeding device control method and non-contact power feeding device |
WO2014156655A1 (en) * | 2013-03-29 | 2014-10-02 | 日産自動車株式会社 | Contactless power transmission device |
JP6264632B2 (en) * | 2013-05-22 | 2018-01-24 | パナソニックIpマネジメント株式会社 | Non-contact power transmission device detection method and non-contact power transmission device |
JP6276532B2 (en) | 2013-07-29 | 2018-02-07 | キヤノン株式会社 | Power receiving device, power transmitting device, control method thereof, and program |
EP3131180B1 (en) * | 2014-04-11 | 2019-06-05 | LG Electronics Inc. | Wireless power transmitter and wireless power transmitting method |
US9321365B2 (en) * | 2014-05-05 | 2016-04-26 | Delphi Technologies, Inc. | Variable gain reference antenna for non-contact charging device |
US9570926B2 (en) * | 2014-07-23 | 2017-02-14 | Visteon Global Technologies, Inc. | Determining a re-configuration of a wireless surface with a multi-coil system |
JP6632308B2 (en) * | 2015-10-13 | 2020-01-22 | ローム株式会社 | Wireless power transmission device, control circuit and control method thereof, and charger |
JP6908348B2 (en) * | 2015-11-27 | 2021-07-28 | ローム株式会社 | Wireless power transmission and its processor |
JP6945188B2 (en) * | 2016-11-30 | 2021-10-06 | パナソニックIpマネジメント株式会社 | Wireless power supply unit, power transmission module, power receiving module and wireless power transmission system |
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JP2003224937A (en) * | 2002-01-25 | 2003-08-08 | Sony Corp | Method and apparatus for power supply, method and apparatus for receiving power supply, power supply system, recording medium, and program |
JP4258737B2 (en) * | 2005-01-24 | 2009-04-30 | 三菱電機株式会社 | Induction heating cooker and induction heating cooking method |
JP4318044B2 (en) * | 2005-03-03 | 2009-08-19 | ソニー株式会社 | Power supply system, power supply apparatus and method, power reception apparatus and method, recording medium, and program |
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JP2011130569A (en) * | 2009-12-17 | 2011-06-30 | Toko Inc | Noncontact power transfer device |
TWM385858U (en) * | 2010-02-12 | 2010-08-01 | Fu Da Tong Technology Co Ltd | Frequency conversion type wireless power supply and charging device |
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