201218847 • 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種面狀發熱體及具備該面狀發熱體之 加熱裝置。 【先前技術】 以往，例如已知有一種面狀發熱體作為用在防止窗板 結露等用途的發熱體。例如，在以下的專利文獻1、2中， 揭示一種在樹脂薄膜（fi lm)上形成導電性薄膜之面狀發熱 體。在專利文獻卜2記載之面狀發熱體中，由於基材為樹 脂薄膜’因此專利文獻1、2記載之面狀發熱體，限定在低 溫域使用’無法在高溫域使用。 針對此點，例如，在下述專利文獻3中，揭示一種在 由玻璃等構成之基板上，形成由IT0(Indium Tin Oxid〆， 銦錫氧化物）等構成之透明導電膜的面狀發熱體。在此面狀 發熱體中，由於基材與.透明導電膜均由無機材料構成，因 此專利文獻3記載的面狀發熱體，在高溫域亦可使用。 [先前技術文獻] [專利文獻] 專利文獻1 :曰本特開平1-235181號公報 專利文獻2:日本特開平2_284377號公報 專利文獻3 :日本特開2007-241179號公報 【發明内容】 [發明所欲解決之課題] 然而’在專利文獻3記載的面狀發熱體巾，會有加熱 3 323452 201218847 或冷卻之響應性低的問題。 纟發明係有鑑於以上各點而研創者，其目的在提供一 種可加熱至南溫，而且於施加電壓時，加熱或冷卻之響應 性優異的面狀發熱體。 [解決課題之手段] 本發明之面狀發熱體具備：厚度2〇〇vm以下的玻璃 板，以及形成於玻螭板上的透明導電膜。在本發明之面狀 發熱體中’玻璃板之厚度為2〇〇_以下。因此，本發明之 面狀發熱體具有優異之加熱或冷卻的響應性。此外，本發 月之面狀發熱體係具有可撓性，因此亦可作成非平面形 狀。再者，本發明之面狀發熱體，由於基板為玻璃板，因 此可發熱至高溫域。 另外在本發明中之「玻璃板」，包括結晶化玻璃板。 面狀發熱體以復具備形成於透明導電膜上的絕緣膜為 佳。依據此構成，可抑制來自面狀發熱體的漏電。另外， 絕緣膜並未特別限定，例如可由紹、石夕、或鈦之氧化物或 氮化物形成。 面狀發熱體以復具備形成於透明導電膜上，且紅外線 之放射率較玻璃板為低的低紅外線放射率膜為佳。依據此 構成，可使紅外線主要從玻璃板侧放射，可有效抑制從與 玻璃板相反侧放射紅外線。因此，可將玻璃板侧設為更高 溫。此外，亦可將面狀發熱體以使耐熱性較低之構件接近 低紅外線放射率膜之方式配設。 從更有效抑制紅外線從與玻璃板相反側放射的觀點而 4 323452 g 201218847 言’低紅外線玫射率膜係以構成為由上述面狀發熱體之玻 璃板側放射之紅外線放射量成為由低紅外線放射率膜侧放 射之紅外線放射量之2倍以上為佳。 另外’自低紅外線放射率膜側放射的紅外線放射量， 可藉由低紅外線放射率膜之厚度或材質等加以調整。低紅 外線放射率膜可為單層膜，亦可為多層膜，甚至亦可由傾 斜膜構成。惟從經濟性觀點而言，低紅外線放射率膜以由 單層膜構成為佳。 低紅外線放射率膜可藉由例如IT0(Indium Tin[Technical Field] The present invention relates to a planar heat generating body and a heating device including the planar heat generating body. [Prior Art] Conventionally, for example, a planar heat generating body has been known as a heat generating body for use in preventing condensation on a window panel. For example, in the following Patent Documents 1 and 2, a planar heat generating body in which a conductive film is formed on a resin film (Film) is disclosed. In the planar heat generating body described in Patent Document 2, since the base material is a resin film, the planar heat generating elements described in Patent Documents 1 and 2 are limited to use in a low temperature range and cannot be used in a high temperature range. In this regard, for example, in the following Patent Document 3, a planar heat generating body in which a transparent conductive film made of IT0 (Indium Tin Oxide) or the like is formed on a substrate made of glass or the like is disclosed. In the planar heating element, since both the base material and the transparent conductive film are made of an inorganic material, the planar heat generating body described in Patent Document 3 can be used in a high temperature range. [PRIOR ART DOCUMENT] [Patent Document 1] Patent Document 1: Japanese Patent Application Laid-Open No. Hei. No. Hei. No. Hei. No. Hei. [Problem to be Solved] However, the planar heating element described in Patent Document 3 has a problem of heating 3 323452 201218847 or low responsiveness to cooling. The present invention has been made in view of the above points, and an object thereof is to provide a planar heat generating body which can be heated to a south temperature and which is excellent in responsiveness to heating or cooling when a voltage is applied. [Means for Solving the Problem] The planar heat generating body of the present invention comprises a glass plate having a thickness of 2 〇〇 vm or less and a transparent conductive film formed on the glass plate. In the planar heat generating body of the present invention, the thickness of the glass plate is 2 Å or less. Therefore, the planar heat generating body of the present invention has excellent responsiveness to heating or cooling. In addition, the planar heating system of this month has flexibility and can therefore be made non-planar. Further, in the planar heat generating body of the present invention, since the substrate is a glass plate, it is possible to generate heat to a high temperature range. Further, the "glass plate" in the present invention includes a crystallized glass plate. The planar heating element preferably has an insulating film formed on the transparent conductive film. According to this configuration, leakage from the planar heat generating body can be suppressed. Further, the insulating film is not particularly limited, and may be formed, for example, of an oxide or a nitride of samarium, stellite or titanium. The planar heating element is preferably provided with a low-infrared emissivity film formed on the transparent conductive film and having a lower emissivity of the infrared rays than the glass plate. According to this configuration, the infrared rays can be mainly radiated from the glass plate side, and the infrared rays can be effectively suppressed from being emitted from the side opposite to the glass plate. Therefore, the side of the glass plate can be set to a higher temperature. Further, the planar heat generating body may be disposed such that the member having low heat resistance is close to the low infrared emissivity film. From the viewpoint of more effectively suppressing the emission of infrared rays from the side opposite to the glass plate, 4 323 452 g 201218847 The low-infrared radiance rate film is configured such that the amount of infrared radiation emitted from the glass plate side of the planar heating element becomes low infrared ray. It is preferable that the amount of infrared radiation emitted by the emissivity film side is twice or more. Further, the amount of infrared radiation emitted from the low-infrared emissivity film side can be adjusted by the thickness or material of the low-infrared emissivity film. The low red outer emissivity film may be a single layer film, a multilayer film, or even a tilt film. However, from the viewpoint of economy, the low infrared emissivity film is preferably composed of a single layer film. Low-infrared emissivity film can be obtained by, for example, IT0 (Indium Tin
Oxide ’鋼錫氧化物）形成。此時，由於低紅外線放射率膜 會讓可視光穿透，因此可實現透明的面狀發熱體。本發明 之面狀發熱體係以400nm至800nm之波長域之平均連光率 為70%以上者為佳。另外，平均穿透率係包含表面反射的 穿透率，非所謂的内部穿透率。 此外’由於ΙΤ0之電磁波之放射率低到約〇. 3(玻璃約 〇· 95) ’因此藉由ιΤ〇形成低紅外線放射率膜，既可維持透 光性’又可有效減小自低紅外線放射率膜侧放射的紅外線 放射量。 另外’低紅外線放射率膜由金屬或合金構成時，低放 射率膜係以藉由絕緣膜與透明導電膜絕緣為佳。 本發明之加熱裝置係具備上述本發明之面狀發熱體。 因此’本發明之加熱裝置具有高加熱效率，而且對加熱或 冷卻的響應性優異。 本發明之加熱裝置亦可為配置成具有收納上述面狀發 5 323452 201218847 熱體之内部空間，且具有在該㈣空間形 的框體，而使面狀發熱體面臨開口部之方汗之:口部 本發明之加歸置亦可為在杨· 外’ 面狀發熱體者。此時，亦可設為形成凹部，己置 部而被固定之一對框體部構成框體，且藉由該―對框體： 來夾持上述面狀發熱體。 對忙體邛 另外’框體例如可由樹脂或玻璃形成。 [發明之功效] 依據本發明，可提供一種可加熱至高溫， 電壓時對加熱或冷卻之響應性優異的面狀發於施加 【實施方式】 ° 以下以第1圖所示之加熱裝置i為例，說明實 明之較佳形態。惟加熱裝置丨及加熱裝置丨中八 發熱體11僅為例示。本發明並不限定於加熱聿 狀 發熱體11。 ·、、、、 1及面狀 如第1圖所示，加熱裝置i具有框體1〇 體10之面狀發熱體u。框體10之構成材料或大、框 特別限定。框體10可藉由例如玻璃、金屬、合金、'陶^無 樹脂等形成。將加熱裝置丨設為具有透光性者時，以由透 光性樹脂或透光性玻璃等形成框體10為佳。 在框體10之内部，收納面狀發熱體u。面狀發熱體 11具備··玻璃板17;形成於玻璃板17上之透明導電膜12，· 形成於透明導電膜12上之絕緣膜13 ;形成於絕緣膜a上 之低紅外線放射率膜14;以及電性連接於透明導電臈12 6 323452 Ο 201218847 之一對電極15、16。面狀發熱體丨1在框體ι〇内，係以玻 璃板17朝向框體1 〇之開口 10a側，低紅外線放射率膜14 侧朝向框體1 〇之底壁部1 Ob側之方式配置。玻璃板17係 面臨開口 l〇a。 在本實施形態中，玻璃板17係厚度為2 0 0 // in以下之 具有可撓性的玻璃板。因此，本實施形態之面狀發熱體11 亦具有可撓性。此外，由於玻璃板17較薄’因此玻璃板 π的熱容量較小。因此，可使面狀發熱體11之溫度在短 時間内上升或下降。因此，加熱裝置1對加熱或冷卻之響 應性優異。此外，在面狀發熱體11中，由於基材為玻璃板 Π，因此可發熱至高溫域。 另外，從更進一步提升加熱或冷卻之響應性的觀點而 言，係以將玻璃板17更薄化為佳。然而，玻璃板17過薄 時’面狀發熱體11之機械耐久性會過低。因此，玻璃板 17之厚度係以5；czin以上為佳。 透明導電膜12係形成於玻璃板Π上。藉由透過一對 電極15、16施加電壓於該透明導電膜12，而從玻璃板π 侧放射紅外線。亦即，該透明導電膜12係具有作為熱源的 功能。 透明導電膜12例如可由ΙΤ0形成。當然，透明導電膜 12之材質並不限定於ΙΤ〇。透明導電膜12亦可例如由金、 銀、鋁等金屬薄臈；含銻（antimony)氧化錫、含氟氧化錫 (FT0)、含鋁氡化鋅等氧化物薄臈構成。 透月導電膜12之厚度例如可設為5Gmn至500nm左 323452 7 201218847 右。透明導_ 12自™形成時，當透明導電膜12過厚 時’會有面狀發熱體11在400mn至800nm之波長域之平均 透光率過低之情形。另一方面，當透明導電膜Μ過薄時， 會有驅動電壓變高之情形。 另外，以面狀發熱體u整體而言，彳⑼帥至8〇〇⑽之 波長域中之平岣透光率係以70%以上為佳。 絕緣膜13係以實質覆蓋除透明導電膜12之電極15、 6形成。卩以外部分之整體之方式形成。藉由該絕緣膜13 抑制來自面狀發熱體Π的漏電。絕緣膜13例如可由銘、 矽、鈦之氧化物或氮化物形成。亦即，絕緣膜13例如可由 氧化鋁、氮化鋁、氧化矽、氮化矽、氧化鈦、氮化鈦等形 成。 絕緣膜13之厚度例如可設為5〇ηπι至l〇〇〇nm左右。當 絕緣膜13之厚度過薄時，會有無法確實使透明導電膜12 絕緣之情形》另一方面’當絕緣膜13過厚時，會有絕緣膜 13形成所需的時間較長，面狀發熱體n之製造成本上升 之情形。 低紅外線放射率膜14係形成於絕緣膜13上。低放射 率膜14係藉由絕緣膜13與透明導電膜丨2及電極16電性 絕緣。此低紅外線放射率膜14係紅外線之放射率較玻璃板 17為低的膜’具有抑制在透明導電膜π中產生之熱從低 紅外線放射率膜14側放射的功能。藉由設置此低紅外線放 射率膜14，可使紅外線主要從玻璃板17側放射。結果， 可使面狀發熱體11之玻璃板17側更為高溫。此外，可有Oxide 'steel tin oxide) is formed. At this time, since the low-infrared emissivity film penetrates the visible light, a transparent planar heating element can be realized. The planar heat generating system of the present invention preferably has an average light transmittance of 70% or more in the wavelength range of 400 nm to 800 nm. In addition, the average transmittance is the transmittance of the surface reflection, which is a non-so-called internal transmittance. In addition, the radiation rate of the electromagnetic wave of ΙΤ0 is as low as about 〇. 3 (glass 〇·95). Therefore, by forming a low-infrared emissivity film by Τ〇, the light transmittance can be maintained, and the low-infrared light can be effectively reduced. The amount of infrared radiation emitted by the emissivity film side. Further, when the low infrared emissivity film is composed of a metal or an alloy, the low emissivity film is preferably insulated from the transparent conductive film by the insulating film. The heating device of the present invention includes the above-described planar heat generating body of the present invention. Therefore, the heating device of the present invention has high heating efficiency and is excellent in responsiveness to heating or cooling. The heating device of the present invention may be configured such that it has an inner space for accommodating the above-mentioned surface-shaped hair 5 323 452 201218847, and has a frame shape in the space of the (four), so that the planar heat-generating body faces the opening portion: The mouth portion of the present invention may also be a person who is in the face of the Yang. In this case, the concave portion may be formed, and one of the fixed portions may be fixed to the frame portion, and the planar heat generating body may be sandwiched by the pair of frames. For the busy body, the frame may be formed of, for example, resin or glass. [Effects of the Invention] According to the present invention, it is possible to provide a planar surface which is heated to a high temperature and which is excellent in response to heating or cooling at a voltage, and is applied to the heating device i shown in Fig. 1 below. For example, a preferred embodiment of the invention will be described. However, the heating device 丨 and the heating device 八 medium heating element 11 are merely illustrative. The present invention is not limited to the heating of the heating element 11. ·, , , 1 and the surface shape As shown in Fig. 1, the heating device i has the planar heating element u of the casing 1 body 10. The constituent material of the frame 10 is large or small, and is particularly limited. The frame 10 can be formed by, for example, glass, metal, alloy, 'ceramics, no resin, and the like. When the heating device is made to have light transmissivity, it is preferable to form the frame 10 from a light-transmitting resin or a translucent glass. Inside the casing 10, a planar heating element u is housed. The planar heating element 11 includes a glass plate 17; a transparent conductive film 12 formed on the glass plate 17, an insulating film 13 formed on the transparent conductive film 12, and a low infrared emissivity film 14 formed on the insulating film a. And electrically connected to the transparent conductive 臈 12 6 323452 Ο 201218847 one of the pair of electrodes 15, 16 . In the casing ι, the glass heating plate 1 is disposed so that the glass plate 17 faces the opening 10a side of the casing 1 and the low-infrared emissivity film 14 side faces the bottom wall portion 1 Ob side of the casing 1 〇. . The glass plate 17 faces the opening l〇a. In the present embodiment, the glass plate 17 is a flexible glass plate having a thickness of 200 Å or less. Therefore, the planar heat generating element 11 of the present embodiment also has flexibility. Further, since the glass plate 17 is thinner, the heat capacity of the glass plate π is small. Therefore, the temperature of the planar heat generating body 11 can be raised or lowered in a short time. Therefore, the heating device 1 is excellent in response to heating or cooling. Further, in the planar heat generating body 11, since the base material is a glass plate, heat can be generated to a high temperature range. Further, from the viewpoint of further improving the responsiveness of heating or cooling, it is preferable to make the glass sheet 17 thinner. However, when the glass sheet 17 is too thin, the mechanical durability of the planar heat generating body 11 is too low. Therefore, the thickness of the glass plate 17 is preferably 5 or more. The transparent conductive film 12 is formed on a glass plate. By applying a voltage to the transparent conductive film 12 through the pair of electrodes 15, 16, infrared rays are emitted from the π side of the glass plate. That is, the transparent conductive film 12 has a function as a heat source. The transparent conductive film 12 can be formed, for example, from ΙΤ0. Of course, the material of the transparent conductive film 12 is not limited to the crucible. The transparent conductive film 12 may be made of, for example, a thin metal such as gold, silver or aluminum; or an oxide thin film such as antimony tin oxide, fluorine-containing tin oxide (FT0) or aluminum-containing zinc telluride. The thickness of the vapor-permeable conductive film 12 can be, for example, 5 Gmn to 500 nm left 323452 7 201218847 right. When the transparent conductive film 12 is formed from the TM, when the transparent conductive film 12 is too thick, the average light transmittance of the planar heat generating body 11 in the wavelength range of 400 nm to 800 nm is too low. On the other hand, when the transparent conductive film is too thin, there is a case where the driving voltage becomes high. Further, as a whole of the planar heating element u, the transmittance in the wavelength region of 彳(9) to 8〇〇(10) is preferably 70% or more. The insulating film 13 is formed to substantially cover the electrodes 15 and 6 except the transparent conductive film 12. The whole of the part other than 卩 is formed. The leakage from the planar heat generating element is suppressed by the insulating film 13. The insulating film 13 can be formed, for example, of an oxide of an inscription, tantalum, or titanium or a nitride. That is, the insulating film 13 can be formed, for example, of aluminum oxide, aluminum nitride, tantalum oxide, tantalum nitride, titanium oxide, titanium nitride, or the like. The thickness of the insulating film 13 can be, for example, about 5 〇 ηι to l 〇〇〇 nm. When the thickness of the insulating film 13 is too thin, there is a case where the transparent conductive film 12 cannot be surely insulated. On the other hand, when the insulating film 13 is too thick, the insulating film 13 is formed for a long time, and the surface is long. The manufacturing cost of the heating element n rises. The low infrared emissivity film 14 is formed on the insulating film 13. The low emissivity film 14 is electrically insulated from the transparent conductive film 2 and the electrode 16 by the insulating film 13. The low-infrared emissivity film 14 is a film having a lower emissivity than the glass plate 17 and has a function of suppressing heat generated in the transparent conductive film π from being emitted from the low-infrared emissivity film 14 side. By providing the low infrared radiation rate film 14, infrared rays can be mainly radiated from the glass plate 17 side. As a result, the side of the glass plate 17 of the planar heat generating body 11 can be made higher temperature. In addition, there may be
8 323452 S 201218847 效抑制框體l〇被加熱。 從將面狀發熱體11之玻璃板17側之溫度更為提高且 降低低紅外線放射率膜14側之溫度之觀點而言，低紅外線 放射率膜14之厚度係以形成為自玻璃板17側放射之紅外 線放射量成為自低紅外線放射率膜14側放射之紅外線放 射量之2倍以上的厚度為佳。從此觀點而言，低紅外線放 射率膜14之厚度例如以50nm至500nm左右為佳。 低紅外線放射率膜14例如可由ITO形成。藉由ITO形 成低紅外線放射率膜14與透明導電膜12雙方，可降低面 狀發熱體11的製造成本。此外，面狀發熱體11的製造將 更容易。再者，由放射率低的ITO形成低紅外線放射率膜 14，可抑制透光性的降低，而且有效抑制紅外線朝低紅外 線放射率膜14側放射。 當然，低紅外線放射率膜14的材質並不限定於ITO。 低紅外線放射率膜14亦可由例如金、銀、鋁等金屬或合 金；含銻氧化錫、含氟氧化錫（FTO)、含鋁氧化鋅等形成。 另外，低紅外線放射率膜14、絕緣膜13、及透明導電 膜12的形成方法，並無特別限定。低紅外線放射率膜14、 絕緣膜13、及透明導電膜12可例如由藏鍍（sputtering) 法或 CVD(Chemical Vapor Deposition，化學氣相沉積）法 等形成。. 一對電極15、16係形成於透明導電膜12上。電極15、 16可由例如鋁、鉻、鉬、銀、銅等金屬或合金等形成。電 極15、16係以形成於透明導電膜12兩侧為佳。電極15、 9 323452 201218847 16可由例如濺鍍法、蒸鍍法、導電性膠（paste)的塗佈、 焊接等形成。其中，尤以藉由难鍍法形成電極15、16為佳。 如此一來’即可提高電極15、16與透明導電膜12的密接 強度。 (實施例1) . 在150mmx250mm、厚度為7〇βιη的玻璃板上，藉由機 鍍法形成由厚度150nm之ΙΤ0構成之透明導電膜，藉此製 作面狀發熱體。 將70W的電力供給至上述製作的面狀發熱體，測定玻 璃基板中央部之溫度從室溫（24°C )到達l〇〇°C所需之時 間。然後，停止電力的供給，測定玻璃基板中央部之溫度 從l〇〇°C降低至30°C所需的時間。結果如下述第1表所示。 另外，玻璃基板中央部的溫度，係使用放射溫度儀測定。 (比較例1) 除將玻璃板之厚度設為400/zm以外，以與實施例1相 同方式製作面狀發熱體。將70W的電力供給至該面狀發熱 體’測定玻璃基板中央部之溫度從室溫（24°C)到達100°C 所需之時間。然後，停止電力的供給，測定玻璃基板中央 部之溫度從l〇(TC降低至30°C所需的時間。結果如下述第 1表所示。 10 323452 201218847 ; 第1表 實施例1 比較例1 玻璃板的厚度 70 /z m 400 μ, m 從24°C加熱至l〇〇°C所 需之時間 16秒 22秒 從100°C冷卻至30°c所 需之時間 57秒 21 〇秒 」 如上述第1表所示，可得知藉由將玻璃板之厚度設為 200 ym以下，可有效提升加熱及冷卻的響應性。 (實施例2) 在150mmx250mm、厚度70/zm的玻璃板17上，藉由錢 鍍法依序形成由厚度150nm之ΙΤ0膜構成之透明導電膜 12、由厚度50nm之Si〇2膜構成之絕緣膜13、由厚度l〇〇nm 之A1構成之低紅外線放射率膜14，製成面狀發熱體11。 利用放射溫度儀測定將70W的電力供給至製成之面狀 發熱體11之透明導電膜12 1分鐘時，玻璃板17側與低 紅外線放射率膜14側各別之溫度。 結果，玻璃板17側之溫度為1 ，低放射率膜14 侧之溫度為30°C。 (實施例3) 除不形成低紅外線放射率臈14以外，以與上述實施例 2相同方式製作面狀發熱體。 利用放射溫度儀測定將70W的電力供給至製成之面狀 11 323452 201218847 發熱體11之透明導電膜12 1分鐘時，玻璃板17側與低 紅外線放射率膜14側各別之溫度。 結果，玻璃板17侧之溫度為104°C，低紅外線放射率 膜14側之溫度為43°C。 由實施例2、3的結果，可得知藉由設置低紅外線放射 率膜14，可有效抑制紅外線自低紅外線放射率膜14侧放 射。 以下說明實施本發明之較佳形態的其他例。在以下說 明中，參照與上述實施形態具有實質共通之功能的構件， 係視為共通的功能而省略說明。 第2圖係本發明之另一實施形態之加熱裝置之大略剖 面圖。如第2圖所示，本實施形態之加熱裝置2，係與上 述加熱裝置1相同，具有由透明導電膜12、表面上形成電 極15、16之玻璃板17構成的面狀發熱體11。 在本實施形態中，收納面狀發熱體的框體10，係由端 緣部彼此熔接黏合之2片樹脂薄膜19a、19b構成。亦即， 在加熱裝置2中，面狀發熱體11係由樹脂疊層而成。 因此，在本實施形態中，除面狀發熱體11以外，框體 10亦具有可撓性。因此，加熱裝置2具有可撓性，亦可在 視需要彎曲的形狀，例如變形為大致圓筒狀的狀態下使 用。因此，藉由使用加熱裝置2，例如可將非平面狀被加 熱物有效率地予以加熱。 此外，由於玻璃板17由樹脂製的框體10覆蓋，因此 玻璃板17的表面不易受損，在加熱裝置2中，不易產生強 12 323452 201218847 度的經時劣化。 另外，樹脂薄膜19a、19b只要是由具有财熱性的樹脂 所構成者即可’並無特別限定。樹脂薄膜19a、19b亦可藉 由例如聚對苯二曱酸乙二酯（polyethylene terephthalate，PET)、聚萘酸乙二醋（polyethylene naphthalate，PEN)、聚颯（polysulfone)、聚對苯二甲酸 苯二酯（poly phenylene terephthalate)、聚醯亞胺 (polyimide)、聚碳酸酯（polycarbonate)、纖維素酯 (cellulose ester)樹脂、聚醯胺（polyamide)等而形成。 【圖式簡單說明】 第1圖係本發明之一實施形態之加熱裝置之大略剖面 圖。 第2圖係本發明之另一實施形態之加熱裝置之大略剖 面圖。 【主要元件符號說明】 10 框體 10b 底壁部 11 面狀發熱體 13 絕緣膜 15、16 電極 19a、19b樹脂薄膜 1、2 加熱裝置 10a 開口 10c 黏合部 12 透明導電膜 14 低紅外線放射率膜 17、18玻璃板 13 3234528 323452 S 201218847 The effect suppression frame is heated. The thickness of the low-infrared emissivity film 14 is formed from the side of the glass sheet 17 from the viewpoint of further increasing the temperature on the side of the glass sheet 17 of the planar heating element 11 and lowering the temperature on the side of the low-infrared emissivity film 14 . The amount of infrared radiation emitted is preferably twice or more the amount of infrared radiation emitted from the side of the low-infrared emissivity film 14 . From this point of view, the thickness of the low infrared ray transmittance film 14 is preferably, for example, about 50 nm to 500 nm. The low infrared emissivity film 14 can be formed, for example, of ITO. By forming both the low-infrared emissivity film 14 and the transparent conductive film 12 by ITO, the manufacturing cost of the planar heat generating body 11 can be reduced. Further, the manufacture of the planar heat generating body 11 will be easier. Further, the low-infrared emissivity film 14 is formed of ITO having a low emissivity, and the decrease in light transmittance can be suppressed, and the infrared rays can be effectively suppressed from being emitted toward the low-infrared emissivity film 14 side. Of course, the material of the low-infrared emissivity film 14 is not limited to ITO. The low-infrared emissivity film 14 may be formed of a metal or alloy such as gold, silver or aluminum; tin-containing tin oxide, fluorine-containing tin oxide (FTO), or aluminum-containing zinc oxide. Further, the method of forming the low-infrared emissivity film 14, the insulating film 13, and the transparent conductive film 12 is not particularly limited. The low-infrared emissivity film 14, the insulating film 13, and the transparent conductive film 12 can be formed, for example, by a sputtering method or a CVD (Chemical Vapor Deposition) method. A pair of electrodes 15, 16 are formed on the transparent conductive film 12. The electrodes 15, 16 may be formed of a metal such as aluminum, chromium, molybdenum, silver, copper, or the like. The electrodes 15, 16 are preferably formed on both sides of the transparent conductive film 12. The electrodes 15, 9 323452 201218847 16 may be formed by, for example, a sputtering method, a vapor deposition method, a coating of a conductive paste, soldering, or the like. Among them, it is preferable to form the electrodes 15 and 16 by a hard plating method. In this way, the adhesion strength between the electrodes 15, 16 and the transparent conductive film 12 can be improved. (Example 1) A transparent conductive film composed of ΙΤ0 having a thickness of 150 nm was formed by a plate plating method on a glass plate having a thickness of 75 mm x 250 mm and a thickness of 7 Å, thereby producing a planar heat generating body. 70 W of electric power was supplied to the above-described planar heat generating body, and the time required for the temperature of the central portion of the glass substrate to reach 10 ° C from room temperature (24 ° C) was measured. Then, the supply of electric power was stopped, and the time required for the temperature of the central portion of the glass substrate to decrease from 10 ° C to 30 ° C was measured. The results are shown in Table 1 below. Further, the temperature at the central portion of the glass substrate was measured using a radiation temperature meter. (Comparative Example 1) A planar heat generating body was produced in the same manner as in Example 1 except that the thickness of the glass plate was set to 400 / zm. 70 W of electric power was supplied to the planar heat generating body. The time required for the temperature of the central portion of the glass substrate to reach 100 ° C from room temperature (24 ° C) was measured. Then, the supply of electric power was stopped, and the time required for the temperature of the central portion of the glass substrate to decrease from TC to 30 ° C was measured. The results are shown in Table 1 below. 10 323452 201218847; Table 1 Example 1 Comparative Example 1 Glass plate thickness 70 /zm 400 μm, m from 24 ° C to l ° ° C required time 16 seconds 22 seconds from 100 ° C cooling to 30 ° c time required 57 seconds 21 seconds As shown in the above Table 1, it can be seen that the responsiveness of heating and cooling can be effectively improved by setting the thickness of the glass plate to 200 μm or less. (Example 2) Glass plate 17 of 150 mm x 250 mm and thickness 70/zm. On the other hand, a transparent conductive film 12 made of a ΙΤ0 film having a thickness of 150 nm, an insulating film 13 made of a Si 〇 2 film having a thickness of 50 nm, and low-infrared radiation composed of A1 having a thickness of 〇〇nm are sequentially formed by a money plating method. The film 14 is formed into a planar heat generating body 11. When the electric power of 70 W is supplied to the transparent conductive film 12 of the planar heating element 11 produced by a radiation temperature meter for 1 minute, the glass plate 17 side and the low infrared radiance film are formed. The temperature on each side of the 14 side. As a result, the temperature on the side of the glass plate 17 is 1, and the low emissivity film 14 The temperature was 30 ° C. (Example 3) A planar heat generating body was produced in the same manner as in Example 2 except that the low infrared emissivity 臈 14 was not formed. The electric power of 70 W was measured by a radiation temperature meter. The surface of the transparent conductive film 12 of the heating element 11 at 1 minute, the temperature of the glass plate 17 side and the low-infrared emissivity film 14 side are different. As a result, the temperature of the glass plate 17 side is 104 ° C, low infrared ray. The temperature of the side of the emissivity film 14 was 43 ° C. From the results of the examples 2 and 3, it was found that the low-infrared emissivity film 14 was provided to effectively suppress the emission of infrared rays from the low-infrared emissivity film 14 side. In the following description, members having functions that are substantially the same as those of the above-described embodiments are referred to as common functions, and description thereof will be omitted. Fig. 2 is another embodiment of the present invention. A schematic cross-sectional view of the heating device. As shown in Fig. 2, the heating device 2 of the present embodiment has the same shape as the heating device 1, and has the transparent conductive film 12 and electrodes 15 and 16 formed on the surface. In the present embodiment, the frame body 10 accommodating the planar heat generating body is composed of two resin films 19a and 19b which are welded and bonded to each other at the edge portions. That is, heating is performed. In the device 2, the planar heat generating body 11 is formed by laminating a resin. Therefore, in the present embodiment, the frame body 10 is flexible except for the planar heat generating body 11. Therefore, the heating device 2 is flexible. The property may be used in a state in which it is bent as needed, for example, in a state of being deformed into a substantially cylindrical shape. Therefore, by using the heating device 2, for example, the non-planar heated object can be efficiently heated. Further, since the glass plate 17 is covered with the resin frame 10, the surface of the glass plate 17 is less likely to be damaged, and in the heating device 2, the deterioration of the time of the strong 12 323452 201218847 is less likely to occur. In addition, the resin films 19a and 19b are not particularly limited as long as they are composed of a resin having a heat-generating property. The resin films 19a, 19b may also be made of, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polysulfone, polyterephthalic acid, or polyethylene terephthalate. It is formed by polyphenylene terephthalate, polyimide, polycarbonate, cellulose ester resin, polyamide, or the like. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a heating apparatus according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view showing a heating apparatus according to another embodiment of the present invention. [Main component symbol description] 10 Frame 10b Bottom wall portion 11 Planar heat generating body 13 Insulating film 15, 16 Electrode 19a, 19b Resin film 1, 2 Heating device 10a Opening 10c Bonding portion 12 Transparent conductive film 14 Low-infrared emissivity film 17,18 glass plate 13 323452