201138158 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種半導體封裝結構，尤其涉及一種發光二 極體封裝結構及其基座的製造方法。 [先前技術] [0002] 現在，發光二極體（Light Emi tting Diode, LED)已 經被廣泛應用到很多領域。發光二極體一般可發出特定 波長的光，例如可見光’但是發光二極體所接收能量的 大部分被轉換為熱量’其餘部分的能量才被真正轉換為 光能。因此，發光Θ極體發光所產生的熱量必須被疏散 掉以保證發光二極體的正常運作。 [0003] 傳統的發光二極體封裝結構一般具有一個佈線基座用於 承載發光二極體晶片’發光二極體晶片產1的熱量通過 該佈線基座導出發光二極體封裝結構。然而，傳統的佈 線基座工程複雜，一般需要鑽孔、埋孔以及多道電鍵制 程來形成電路結構，藉由謗電路結構連結位於佈線基座 上下表面的電極’導致佈線基遽工程複雜且其厚度無法 有效縮小’從而導致封裝結構的散熱能力不佳。 【發明内容】 [0004] 有鑒於此，有必要提供一種散熱效率較好的發光二極體 封裝結構及其基座的製造方法。 [0005] —種發光二極體封裝結構的製造方法，包括以下步驟： k供一電極板及至少一個絕緣基材板’該電極板包括複 數電極單元，每個電極單元包括一個第一電極和一個第 二電極；熱壓合所述電極板及至少一個絕緣基材板，使 099112447 表單編號A0101 第4頁/共23頁 0992022066-0 201138158 [0006] Ο [0007]201138158 VI. Description of the Invention: [Technical Field] The present invention relates to a semiconductor package structure, and more particularly to a light emitting diode package structure and a method of fabricating the same. [Prior Art] [0002] Light Emitter Diode (LED) has been widely used in many fields. Light-emitting diodes typically emit light of a particular wavelength, such as visible light, but most of the energy received by the light-emitting diode is converted to heat' the rest of the energy is actually converted to light energy. Therefore, the heat generated by the luminescence of the illuminating diode must be evacuated to ensure the normal operation of the illuminating diode. [0003] A conventional light-emitting diode package structure generally has a wiring base for carrying a light-emitting diode wafer. The heat of the light-emitting diode wafer 1 is derived through the wiring base to derive a light-emitting diode package structure. However, the conventional wiring base is complicated in engineering, generally requires drilling, buried holes, and multiple key processes to form a circuit structure, and the connection of the electrodes located on the upper and lower surfaces of the wiring base by the circuit structure causes the wiring base engineering to be complicated and The thickness cannot be effectively reduced, which results in poor heat dissipation of the package structure. SUMMARY OF THE INVENTION [0004] In view of the above, it is necessary to provide a light emitting diode package structure and a method of manufacturing the same. [0005] A method of manufacturing a light emitting diode package structure, comprising the steps of: k supplying an electrode plate and at least one insulating substrate plate, the electrode plate comprising a plurality of electrode units, each electrode unit comprising a first electrode and a second electrode; thermocompression bonding the electrode plate and at least one insulating substrate plate to make 099112447 Form No. A0101 Page 4 / Total 23 Page 0992022066-0 201138158 [0006] Ο [0007]
[0008] [0009] 099112447 得電極板上的每個第一電極和第二電極均被絕緣基材板 的絕緣基材包覆；研磨掉電極板兩面的絕緣基材使得第 一電極和第二電極兩端露出，得到一個基座層；在所述 基座層上貼設複數發光二極體晶片，並使該發光二極體 晶片與其對應的第一電極及第二電極電連接；及切割得 到複數發光二極體封裝結構。 一種發光二極體封裝結構的基座的製造方法，包括以下 步驟：提供一電極板及至少一個絕緣基材板，該電極板 包括複數電極單元，每個電極單元包括一個第一電極和 一個第二電極；熱壓合所述電極板及至少一個絕緣基材 板，使得電極板上的每個第一電極和第二電極均被絕緣 基材板的絕緣基材包覆；研磨掉電極板兩面的絕緣基材 使得第一電極和第二電極兩端露出，得到一個基座層； 及切割得到複數基座。 本發明實施方式提供的發光二極體封裝結構製造方法中 ，利用熱壓合與研磨來直接形成發光二極體封裝結構的 基座，其制程簡單不需多道電鍍制程即可完成，從而可 充分縮小基座的厚度，降低基座的熱阻，提高發光二極 體封裝結構中發光二極體晶片的散熱效率。另外，本發 明實施方式提供的制程中，不需切割大面積的金屬基材 便可完成切割步驟，能節省制程的成本。 【實施方式】 以下將結合附圖對本發明作進一步的詳細說明。 請參閱圖1，本發明第一實施方式提供的一種發光二極體 封裝結構100包括基座10、發光二極體晶片20、封裝體 表單編號Α0101 第5頁/共23頁 0992022066-0 201138158 30及反射杯40 [0010] 14及第 電極16 所述基座10包括絕緣基板12、第〆電極 相對 述頂面1以 。所述絕緣基板12具有一頂面122及與所’ διίϊ122及 #资所述頂 的底面124。該絕緣基板12上形成有声 邊Α板12 底面124的第一通孔126和第二通孔128。" 科 /道執反電絕' 採用高導熱且電絕緣材料製成，該而矛'、，、 备化矽的 不以及乳1 可選自環氧樹脂、矽烷氧樹脂、導熱# π裏於所述 組成物。所述第一電極14和第二電極16勿，/14的頂面 電極 [0011] 第一通孔126和第二通孔128中。 所述本平齊 和底面分別與絕緣基板12的頂面I22和’緣Α板12的 ，所述第二電極16的頂面和底面也分別與絕u毽二電 電換14和承 頂面122和底面124基本平齊》所述第 /電極I4 極16採用導熱導電材料製成，優選地，所述第 制π，如氧化姻錫 和第二電極16採用金屬或金屬合金製成 、奴ΓΑ1)、錫（如） (ITO)、銅（Cu)、鎳（Ni)、銀（Ag)、銘CA 、金（Au)或其合金（alloy)等。本實施方式中’所述第 一電極14的直徑大於第二電極16的直徑。 - 所述發光二極體晶片20貼設於所述第一電極14的頂面上 ，且發光二極體晶片20上之兩電極（圖未示）分別與第一 電極14和第二電極16電連接。具體地’發光二極體晶片 20可以通過導線22與第二電極16電連接。或者，可以、畐 過覆晶的技術電連結第二電極16(圖未示）。優選地 述第一電極14的直徑大於發光二極體晶片2〇的最大_ 如此’可最大程度的增大第一電極14與發光二極體曰片 20的接觸面積，使得發光二極體晶片20產生的熱量可奸 099112447 表單編號A0101 第6頁/共23頁 0992022066- 201138158 過第一電極14快速傳導到發光二極體封裝結構100的外部 [0012] [0013] 〇 [0014] [0015] 所述反射杯4〇環繞發光二極體晶片20設置於基座10上， 旅與基座10 -同形成-個容爹空間42。該反射杯40用於 將發光二極體晶片2〇照射到其上的光反射出發光二極體 封裝結構1〇〇。 所述封«30填充於所述容0間42中，用於保護發光 二極體晶片20免受灰塵、水氣等影響。優選地，所述封 裝體30内可掺雜有榮光粉，所述f光粉可選自減石權 石、試㈣石權石、氮化物、硫化物及梦酸鹽#的一種 或幾種的組合。 請參閱圖2及圖3 ,所述發光二極體封裝結構100的第一種 製造方法包括以下步驟： 步驟一，提供一電極板1和兩個綠緣基材板2所辻·電極 板1包括呈陣列分佈的複數電極單元15，每個電極單元15 包括一個第一電極1¾及一個第二電極16。所述電極板1上 每個第一電極14及第二電極16周圍都形成有錄空孔la ° 本實施方式中，電極板1包括複數支撐條lb ’其中支撑條 lb鄰接第一電極14及第二電極16以支撐複數第一電極14 以及複數第二電極16。所述電極板1採用金屬成金屬合金 製成，如銅、鋁、銅合金及鋁合金等。 步驟二，將電極板1放於兩個絕緣基材板2之間’用熱廢 合方式使得每個第一電極14和第二電極16均被絕緣基材 板2的絕緣基材包覆，然後研磨掉電極板1兩面的絕緣基 099112447 表單編號A0101 第7頁/共23頁 0992022066-0 [0016] 201138158 材使得第一電極14和第二電極16兩端露出，得到一個基 座層3。可以理解，用來形成基座層3的絕緣基材板2的數 量並不限於兩個，其數量也可為一個或兩個以上，只要 其提供的絕緣基材能夠包覆住電極板1上的每個第一電極 14和第二電極16即可。 [0017] [0018] [0019] [0020] [0021] [0022] 099112447 步驟三，在所述基座層3的每個第一電極14上貼設一個發 光二極體晶片20，並使該發光二極體晶片2〇與對應的第 一電極14及第二電極16電連接，具體地，該發光二極體 晶片2 0可利用打線或覆晶的技術與對應的第 一電極14及 第二電極16電連接。 步驟四，在所述基座層3上形成一封裝體層4來包覆發光 二極體晶片20。該封裝體層4内可摻雜有螢絲，所述榮 光私可選自纪銘石梅石、試紀銘石權石、氮化物、硫化 物及#酸鹽中的—種或幾種的組合。所述封裝體層4可通 過塗鍵或模鑄的方切成在基祕3上。 步驟五’在所述封襞體層4上形成複數凹槽5，該封裝體 層4分割成複數封裝體3 〇。 步驟六’在所述凹槽5内形成反射杯40。所述反射杯40可 透過模鑄的方式形成在凹槽5内。 步驟七’切割得到複數發光二極體封裝結構100。 請參閱圖4 ’所迷發光二極體封裝結構1GG的第二種製造 方法與上«1製衫法減，二者㈣在於，在第 二種製造方法中’先形成反射杯40再透過注射或點膠等 技術形成封裝體。 表箪編號A0101 第8 1/共23 1 0992022066-0 201138158 [0023]明參閱圖5，所述發光二極體封裝結構1〇〇的第三種製造 方法與上述第一種製造方法相似，二者區別在於，在第 —種製造方法中，在封裝體層4形成在基座層3上之前， 先在基座層3上放置一暫時基板6，在封裝體層4形成^基 座層3後，通過移除暫時基板6在封裝體層4上形成複數凹 槽5，其中暫時基板6可以為一體成型的模片，以方 離。 利 [0024] 請參閱圖6，本發明第二實施方式提供的— 封裳結構綱與第—實施«__‘^體 100相似，二者_在於’所料光二_封I結 沒有發光二極體封裝結構100中的反射杯40〇 [0025] 請參閱圖7 ’所述發光二極艘封襄結構2〇〇的製造方法與 第-實施方式中提供的發光二極體封裝結構刚的第一種 製造方法相似’二者㈣在於，所述發光二極體封裝社 構20〇的製造過程t，在基座層3上形成封裝體層4後即。可 進行切割得到複數發光二極體封裴結構2〇〇。 Ο [0026] 請參閱圖8,本發明第三實施方式提供的一種發光二極體 封装、结構3GG與第-實施方式中的發光二極體封裝結構 100相似，二者區別在於，所述發光二極體封裝結構刪 包括-電極單元15a，電極單元15a包括—第一電極14& 、^第二電極16a及-導熱柱18，其中導熱柱㈣第一電 極l4a與第二電極l6a為彼此分離的結構。所述發光二極 體射裝結構300的發光二極體晶片2〇貼設在所述導熱柱18 上。本實施方式中，第一電極l4a、第二電極心及導熱 柱丨8的材料相同。 099112447 第9頁/共23頁 0992022066- 表草蹁號A0101 201138158 [0027] 請參閱圖9，所述發光二極體封裝結構300的製造方法與 第一實施方式中提供的發光二極體封裝結構100的第一種 製造方法相似，二者區別在於，所述發光二極體封裝結 構300的製造過程中，發光二極體晶片20貼設在基座層3a 的所述導熱柱18上。 [0028] 本發明實施方式提供的發光二極體封裝結構製造方法中 ，利用熱壓合與研磨來直接形成發光二極體封裝結構的 基座，其制程簡單不需鑽孔、埋孔以及多道電鍍制程即 可完成，從而可充分縮小基座的厚度，降低基座的熱阻 ，提高發光二極體封裝結構中發光二極體晶片的散熱效 率。另外，本發明實施方式提供的制程中，不需切割大 面積的金屬基材便可完成切割步驟，能節省制程的成本 〇 [0029] 另外，本領域技術人員還可在本發明精神内做其他變化 ，當然，這些依據本發明精神所做之變化，都應包含在 本發明所要求保護之範圍之内。 【圖式簡單說明】 [0030] 圖1是本發明第一實施方式提供的一種發光二極體封裝結 構剖視圖。 [0031] 圖2是圖1中的發光二極體封裝結構製造過程中提供的電 極板的俯視圖。 [0032] 圖3是圖1中的發光二極體封裝結構第一種製造方法示意 圖。 [0033] 圖4是圖1中的發光二極體封裝結構第二種製造方法示意 099112447 表單編號A0101 第10頁/共23頁 0992022066-0 201138158 圖。 [0034] 圖5是圖1中的發光二極體封裝結構第三種製造方法示意 圖。 [0035] 圖6是本發明第二實施方式提供的一種發光二極體封裝結 構剖視圖。 [0036] 圖7是圖6中的發光二極體封裝結構的一種製造方法示意 圖。[0009] [0009] 099112447 Each of the first electrode and the second electrode on the electrode plate is covered by an insulating substrate of the insulating substrate plate; the insulating substrate on both sides of the electrode plate is ground to make the first electrode and the second electrode The two ends of the electrode are exposed to obtain a pedestal layer; a plurality of illuminating diode chips are attached to the pedestal layer, and the illuminating diode chip is electrically connected to the corresponding first electrode and the second electrode; and cutting A complex LED package structure is obtained. A method for manufacturing a pedestal of a light emitting diode package structure, comprising the steps of: providing an electrode plate and at least one insulating substrate plate, the electrode plate comprising a plurality of electrode units, each electrode unit comprising a first electrode and a first a second electrode; thermocompression bonding the electrode plate and at least one insulating substrate plate, so that each of the first electrode and the second electrode on the electrode plate are covered by an insulating substrate of the insulating substrate plate; grinding both sides of the electrode plate The insulating substrate exposes both ends of the first electrode and the second electrode to obtain a pedestal layer; and the dicing is obtained by cutting. In the method for manufacturing a light-emitting diode package structure provided by the embodiment of the present invention, the susceptor of the light-emitting diode package structure is directly formed by thermal pressing and grinding, and the process is simple, and the plating process can be completed without using multiple plating processes. The thickness of the pedestal is sufficiently reduced, the thermal resistance of the susceptor is lowered, and the heat dissipation efficiency of the illuminating diode chip in the LED package structure is improved. In addition, in the process provided by the embodiment of the present invention, the cutting step can be completed without cutting a large area of the metal substrate, and the cost of the process can be saved. [Embodiment] Hereinafter, the present invention will be further described in detail with reference to the accompanying drawings. Referring to FIG. 1 , a light emitting diode package structure 100 according to a first embodiment of the present invention includes a susceptor 10 , a light emitting diode chip 20 , a package form number Α 0101 , and a total of 23 pages 0992022066-0 201138158 30 . And the reflector cup 40 [0010] 14 and the electrode 16 The susceptor 10 includes an insulating substrate 12 and a second electrode opposite to the top surface 1. The insulating substrate 12 has a top surface 122 and a bottom surface 124 opposite the διίϊ122 and the top surface. A first through hole 126 and a second through hole 128 of the bottom surface 124 of the edge plate 12 are formed on the insulating substrate 12. "科/道执反电绝' is made of high thermal conductivity and electrically insulating material, and the spear ',,, and the preparation of the mash and the milk 1 can be selected from epoxy resin, decyloxy resin, heat conduction #π In the composition. The first electrode 14 and the second electrode 16 are not, and the top surface electrode of the /14 is in the first through hole 126 and the second through hole 128. The front surface and the bottom surface of the insulating substrate 12 and the top surface I22 of the insulating substrate 12, respectively, and the top surface and the bottom surface of the second electrode 16 are also respectively connected to the top surface 122 and the top surface 122. And the bottom surface 124 is substantially flush. The first/electrode I4 pole 16 is made of a thermally conductive material. Preferably, the first π, such as oxidized tin and the second electrode 16 are made of metal or a metal alloy, and the slave 1 ), tin (such as) (ITO), copper (Cu), nickel (Ni), silver (Ag), Ming CA, gold (Au) or alloys thereof (alloy). In the present embodiment, the diameter of the first electrode 14 is larger than the diameter of the second electrode 16. The light emitting diode chip 20 is attached to the top surface of the first electrode 14, and two electrodes (not shown) on the LED substrate 20 are respectively connected to the first electrode 14 and the second electrode 16 Electrical connection. Specifically, the light-emitting diode chip 20 can be electrically connected to the second electrode 16 through the wire 22. Alternatively, the second electrode 16 (not shown) may be electrically coupled to the flip chip technique. Preferably, the diameter of the first electrode 14 is larger than the maximum of the LED 2 _ such that the contact area of the first electrode 14 and the LED chip 20 can be maximized, so that the LED chip 20 generated heat can be raped 099112447 Form No. A0101 Page 6 / Total 23 page 0992022066- 201138158 The first electrode 14 is quickly conducted to the outside of the LED package structure 100 [0012] [0014] [0015] The reflector cup 4 is disposed on the susceptor 10 around the illuminating diode chip 20, and the raft and the susceptor 10 are formed together with a accommodating space 42. The reflector cup 40 is used to reflect the light irradiated onto the light-emitting diode wafer 2 to the light-emitting diode package structure 1A. The seal «30 is filled in the cavity 42 for protecting the LED chip 20 from dust, moisture and the like. Preferably, the package body 30 may be doped with glory powder, and the f-light powder may be selected from one or more of a rock stone, a test stone, a nitride, a sulfide, and a dream salt. The combination. Referring to FIG. 2 and FIG. 3 , the first manufacturing method of the LED package structure 100 includes the following steps: Step one, providing an electrode plate 1 and two green edge substrate plates 2 and an electrode plate 1 The plurality of electrode units 15 are distributed in an array, and each of the electrode units 15 includes a first electrode 126 and a second electrode 16. Each of the first electrode 14 and the second electrode 16 on the electrode plate 1 is formed with a recording hole la °. In this embodiment, the electrode plate 1 includes a plurality of support bars lb ', wherein the support bar lb is adjacent to the first electrode 14 and The second electrode 16 supports the plurality of first electrodes 14 and the plurality of second electrodes 16. The electrode plate 1 is made of a metal alloy such as copper, aluminum, a copper alloy, and an aluminum alloy. In the second step, the electrode plate 1 is placed between the two insulating substrate plates 2. Each of the first electrode 14 and the second electrode 16 is covered with an insulating substrate of the insulating substrate plate 2 by thermal waste. Then, the insulating base on both sides of the electrode plate 1 is ground 099112447. Form No. A0101, page 7/23, 0992022066-0 [0016] The material of the first electrode 14 and the second electrode 16 are exposed at both ends to obtain a pedestal layer 3. It is to be understood that the number of the insulating substrate sheets 2 for forming the susceptor layer 3 is not limited to two, and the number thereof may be one or two or more as long as it provides an insulating substrate capable of covering the electrode sheets 1. Each of the first electrode 14 and the second electrode 16 may be used. [0020] [0020] [0022] Step 3, a light-emitting diode wafer 20 is attached to each of the first electrodes 14 of the pedestal layer 3, and [0018] The LED chip 2 is electrically connected to the corresponding first electrode 14 and the second electrode 16 . Specifically, the LED chip 20 can use a wire bonding or flip chip technology and a corresponding first electrode 14 and The two electrodes 16 are electrically connected. In step four, a package layer 4 is formed on the pedestal layer 3 to cover the luminescent diode wafer 20. The package layer 4 may be doped with a fluorescent filament, and the glory may be selected from the group consisting of Jiming Shimei, Shimi Mingshi, Nitride, Sulfide and #Acate. The package layer 4 can be cut into the base 3 by means of a keying or molding. Step 5' forms a plurality of grooves 5 on the sealing body layer 4, and the package body layer 4 is divided into a plurality of packages 3'. Step six' forms a reflective cup 40 in the recess 5. The reflector cup 40 is formed in the recess 5 by die casting. Step seven' cutting results in a plurality of light emitting diode package structures 100. Please refer to FIG. 4 for the second manufacturing method of the LED package structure 1GG and the above-mentioned method, in which the fourth method is that in the second manufacturing method, the reflective cup 40 is formed first and then the injection is injected. Or a technique such as dispensing to form a package. Table No. A0101 No. 8 1 / 23 1 0992022066-0 201138158 [0023] Referring to FIG. 5, the third manufacturing method of the LED package structure 1 is similar to the first manufacturing method described above, The difference is that, in the first manufacturing method, before the package layer 4 is formed on the pedestal layer 3, a temporary substrate 6 is placed on the pedestal layer 3, and after the pedestal layer 3 is formed on the package layer 4, A plurality of grooves 5 are formed on the package layer 4 by removing the temporary substrate 6, wherein the temporary substrate 6 may be an integrally formed die to be spaced apart. [0024] Referring to FIG. 6, the second embodiment of the present invention provides a similar structure to the first implementation of the «__" body 100, and both of them are in the light of the second envelope. The reflective cup 40 中 in the package structure 100 [0025] Please refer to FIG. 7 'the manufacturing method of the light-emitting diode package structure 2 与 and the second embodiment of the light-emitting diode package structure provided in the first embodiment One manufacturing method is similar to the 'fourth' (four) in that the manufacturing process t of the light-emitting diode package structure 20 is formed after the package layer 4 is formed on the pedestal layer 3. The cutting can be performed to obtain a complex light-emitting diode sealing structure 2〇〇. Referring to FIG. 8 , a light emitting diode package and a structure 3GG according to a third embodiment of the present invention are similar to the light emitting diode package structure 100 of the first embodiment, and the difference is that the light is emitted. The diode package structure includes an electrode unit 15a, and the electrode unit 15a includes a first electrode 14&, a second electrode 16a and a heat conducting column 18, wherein the heat conducting column (four) the first electrode 14a and the second electrode 16a are separated from each other Structure. The light emitting diode chip 2 of the light emitting diode projecting structure 300 is attached to the heat conducting column 18. In the present embodiment, the materials of the first electrode 14a, the second electrode core, and the heat transfer column 8 are the same. 099112447 Page 9 / Total 23 page 0992022066 - Table Grass No. A0101 201138158 [0027] Please refer to FIG. 9 , the manufacturing method of the LED package structure 300 and the LED package structure provided in the first embodiment The first manufacturing method of 100 is similar in that, in the manufacturing process of the light emitting diode package structure 300, the light emitting diode wafer 20 is attached to the heat conducting column 18 of the pedestal layer 3a. [0028] In the method for fabricating a light-emitting diode package structure provided by the embodiments of the present invention, the susceptor of the light-emitting diode package structure is directly formed by thermal pressing and grinding, and the process is simple, no need for drilling, burying, and many The plating process can be completed, thereby fully reducing the thickness of the pedestal, reducing the thermal resistance of the susceptor, and improving the heat dissipation efficiency of the illuminating diode chip in the LED package structure. In addition, in the process provided by the embodiment of the present invention, the cutting step can be completed without cutting a large area of the metal substrate, and the cost of the process can be saved. [0029] In addition, those skilled in the art can also make other in the spirit of the present invention. Variations, of course, are intended to be included within the scope of the invention as claimed. BRIEF DESCRIPTION OF THE DRAWINGS [0030] FIG. 1 is a cross-sectional view showing a structure of a light emitting diode package according to a first embodiment of the present invention. 2 is a top plan view of an electrode plate provided during the fabrication of the light emitting diode package structure of FIG. 1. 3 is a schematic view showing a first manufacturing method of the light emitting diode package structure of FIG. 1. 4 is a schematic diagram of a second manufacturing method of the LED package structure of FIG. 1 099112447 Form No. A0101 Page 10 of 23 0992022066-0 201138158 Figure. 5 is a schematic view showing a third manufacturing method of the light emitting diode package structure of FIG. 1. 6 is a cross-sectional view showing a structure of a light emitting diode package according to a second embodiment of the present invention. 7 is a schematic view showing a manufacturing method of the light emitting diode package structure of FIG. 6.
[0037] 圖8是本發明第三實施方式提供的一種發光二極體封裝結 構剖視圖。 [0038] 圖9是圖8中的發光二極體封裝結構的一種製造方法示意 圖。 【主要元件符號說明】 [0039] 發光二極體封裝結構 100， [0040] 電極板 Ϊ [0041] 鏤空孔 ' ' [0042] 支撐條 lb [0043] 絕緣基材板 2 [0044] 基座層 3，3a [0045] 封裝體層 4 [0046] 凹槽 5 [0047] 暫時基板 6 表單編號A0101 第11頁/共23頁 099112447 0992022066-0 201138158 [0048] 基座 10 [0049] 絕緣基板 12 [0050] 第一電極 14， 14a [0051] 電極單元 15， 15a [0052] 第二電極 16， 16a [0053] 導熱柱 18 [0054] 頂面 122 [0055] 底面 124 [0056] 第一通孔 126 [0057] 第二通孔 128 [0058] 發光二極體晶片 20 [0059] 導線 22 [0060] 封裝體 30 [0061] 反射杯 40 099112447 表單編號A0101 第12頁/共23頁 0992022066-08 is a cross-sectional view showing a structure of a light emitting diode package according to a third embodiment of the present invention. 9 is a schematic view showing a manufacturing method of the light emitting diode package structure of FIG. 8. [Main component symbol description] [0040] LED package structure 100, [0040] electrode plate Ϊ [0041] 镂 hole ' ' [0042] support bar lb [0043] insulating substrate plate 2 [0044] pedestal layer 3,3a [0045] Package Layer 4 [0046] Groove 5 [0047] Temporary Substrate 6 Form No. A0101 Page 11 / Total 23 Pages 099112447 0992022066-0 201138158 [0048] Base 10 [0049] Insulating Substrate 12 [0050] First electrode 14, 14a [0051] electrode unit 15, 15a [0052] second electrode 16, 16a [0053] heat conducting column 18 [0054] top surface 122 [0055] bottom surface 124 [0056] first through hole 126 [ 0057] Second via hole 128 [0058] Light-emitting diode wafer 20 [0059] Conductor 22 [0060] Package 30 [0061] Reflector cup 40 099112447 Form number A0101 Page 12 of 23 0992022066-0