201011820 六、發明說明： 【發明所靥之技術領域】 本發明係關於包括在加工時以黏著帶被覆半導體晶圓 的外周端緣，接著將其去除的半導體加工方法及該半導體 加工方法所使用的黏著帶。 【先前技術】 在半導體晶圓的加工步驟中，係進行對半導體晶圓表 ^ 面以薄膜形成或圖案化等所謂的電路形成爲目的的各種加 工。以該加工而言，例如日本特開2008-153425號公報（專 利文獻1 )所示，列舉電極部的鍍敷、光阻的塗布、電漿 蝕刻等。 (專利文獻1)日本特開2008-153425號公報 如上所示之加工方法雖以加工半導體晶圓之主表面爲 目的，但是會有連不需要如上所示之加工的半導體晶圓的 外周端緣部分亦同時加工的情形，而會有將半導體晶圓污 © 染或腐蝕的情形。當半導體晶圓的端緣受到污染時，一般 而言，必須以大量的洗淨液來洗淨污染部位等，而在製造 效率及環境方面造成問題。 此外，在處理半導體晶圓時，會有易受到來自外部的 衝撞的半導體晶圓的外周端緣發生破損的情形。 此外，尤其即使欲對半導體晶圓施行可形成硬度及耐 蝕性佳、均一厚度塗敷的無電解鎳鍍敷加工，亦會有僅將 半導體晶圓浸漬在鍍敷液，並無法在半導體晶圓表面充分 201011820 形成鎳磷合金的鍍敷的情形。 【發明內容】 本發明係鑑於上述情形而硏創者，目的在提供半導體 加工方法及該方法所使用之黏著帶，其即使在因加工而使 半導體晶圓的外周端緣受到污染的情形下，亦無須進行洗 淨而可去除該污染’且可保護半導體晶圓的外周端緣免於 腐蝕或來自外部的衝撞，而且可藉由無電解鎳鍍敷來進行 塗敷。 ❹ 本發明人等爲了解決上述技術課題而精心硏究。結果 發現在將半導體晶圓加工前，利用黏著帶來保護半導體晶 圓的外周端緣，藉此可簡便地保護半導體晶圓的外周端緣 免於污染或衝撞等，而且無須進行伴隨著剝離所爲之洗 淨，即可有效率地進行半導體晶圓的薄膜形成處理或圖案 處理。此外，發現在將半導體晶圓加工後，在半導體晶圓 的外周端緣黏貼黏著帶，接著將該黏著帶由半導體晶圓剝 〇 離，連由於加工而次要地形成在外周端緣的阻劑等的污 染，亦可同時地由半導體晶圓去除》 此外，本發明人等發現在對半導體晶圓施行充分的無 ' 電解鎳鍍敷時，如以下實施例所示，必須在半導體晶圓形 成絕緣部分。藉由本發明，以具電性絕緣性的黏著帶來保 護半導體晶圓的外周端緣，藉此由於黏著帶將絕緣部分形 成在半導體晶圓上，因此尤其適於對半導體晶圓的主表面 施行無電解鎳鍍敷加工。 201011820 亦即’在一態樣中，本發明係關於一種半導體加工方 法，係包括：在半導體晶圓加工時，將黏著帶黏貼在半導 體晶圓之外周端緣的步驟、及由前述半導體晶圓將前述黏 著帶去除的步驟。 此外，本發明人等發現在黏著帶的黏著劑具有丙烯酸 系成分與聚矽氧成分時，尤其可抑制水進入至半導體晶圓 與黏著帶之間，在加工時，黏著帶會難以由半導體晶圓脫 I 落。因此，如上所示之黏著帶係必須將半導體晶圓浸在液 體中，而且在加工時必須要有絕緣部分的無電解鎳鍍敷 中，尤其可安定地適用。 亦即，在其他態樣中，本發明係關於一種黏著帶，係 具有將黏著帶黏貼在半導體晶圓之外周端緣的步驟及將黏 著帶去除的步驟的半導體加工方法所使用的黏著帶，其特 徵爲：黏著帶的黏著劑具有丙烯酸系成分與聚矽氧成分。 【實施方式】 Q 以下針對本發明之實施形態加以說明。 <黏著帶> 黏著帶係以在基材薄膜的單面設有黏著劑層的構成爲 宜。 黏著帶的寬幅係以2mm至10mm之間爲宜。若黏著帶 的寬幅小，黏著帶會容易由半導體晶圓的外周端緣脫落。 若黏著帶的寬幅大，則難以無間隙地將黏著帶黏貼在半導 體晶圓的外周端緣。 201011820 烯、聚 之共聚 宜。若 離去除 緣的可 地將黏 系成分 分與聚 烷成分 以丙烯 加工或 半導體 的可能 ，甚至 成的成 染，同 液，尤 構成基材薄膜的樹脂材料較佳爲聚乙烯、聚丙 對苯二甲酸乙二酯、聚萘二甲酸乙二酯或含有該等 合體。基材薄膜的厚度係以5/zm至150/zm之間爲 基材薄膜的厚度薄，當將黏著帶由半導體晶圓剝 時，會有黏著帶破斷而殘留在半導體晶圓的外周端 能性。此外，若基材薄膜的厚度厚，則難以無間隙 著帶黏貼在半導體晶圓的外周端緣。 ^ 構成黏著帶之黏著劑層的黏著劑係含有丙烯酸 與聚矽氧成分之二者，甚至較佳爲含有丙烯酸系成 矽氧成分之二者相結合而成的成分。 若使用以聚矽氧爲主成分的黏著劑，則有矽氧 成爲半導體晶圓之污染源的可能性。此外，若使用 酸系爲主成分的黏著劑，在半導體晶圓之主表面的 洗淨的步驟中，當黏著帶接觸到水時，水會浸入至 晶圓與黏著帶之間，而有黏著帶由半導體晶圓脫落 ❹ 性。 黏著劑含有丙烯酸系成分與聚矽氧成分之二者 含有丙烯酸系成分與聚矽氧成分之二者相結合而 分，藉此可抑制因黏著劑所造成之半導體晶圓的污 時可抑制因與水接觸而造成黏著帶脫離。 在此所稱的水係指包含酸、鹼、或離子的水溶 其亦包含無電解鎳鍍敷所使用的鍍敷液。 含有丙烯酸系成分與聚矽氧成分的黏著劑係可藉由在 201011820 丙烯酸系黏著劑摻合聚矽氧成分而製造。較佳摻合比係聚 矽氧成分相對於丙烯酸系黏著劑100質量份爲0.5質量份 至5質量份的範圍。 以聚矽氧成分而言，可列舉例如在甲基丙烯酸酯骨架 含有聚矽氧的聚合體。僅將如上所示之聚矽氧成分摻合在 丙烯酸系黏著劑亦佳，但是更佳爲使用使聚矽氧成分與丙 烯酸系成分相結合而成的成分。此係基於當聚矽氧成分與 ^ 丙烯酸系成分、例如丙烯酸酯相結合時，作爲黏著劑的結 合力會受到強化之故。更加具體說明之，例如可列舉具有 羥基的聚矽氧成分透過異氰酸酯硬化劑而與丙烯酸酯共聚 合體相結合而成者。 在黏著劑亦可含有增黏劑，供調整黏著力用。黏著劑 一般而言可爲藉由感壓型或紫外線硬化來減低黏著力的紫 外線剝離型的任一者，但是以對於被著體材料形成爲2N/ 10mm以下之剝離力者爲宜。若剝離力過高，會難以由半導 ® 體晶圓的外周端緣剝離去除黏著帶，而易於發生黏著帶破 裂、殘留黏著劑或半導體晶圓破損。 黏著劑層的厚度係以0.1#m至60//m之間爲宜。若黏 著劑層薄，在黏著帶之黏貼或半導體晶圓之加工中，會有 黏著帶由半導體晶圓的外周端緣脫落的可能性》另一方 面，若黏著劑層厚，則難以剝離去除黏著帶。 黏著劑層係可藉由在基材薄膜上直接塗刷黏著劑而形 成。將構成黏著劑層的黏著劑塗刷在基材薄膜的手段並未 201011820 特別限定，例如有將黏著劑的溶液塗佈在剝離薄膜的單 面，使其乾燥後再轉印在基材薄膜的方法。在任何方法中， 較宜爲黏著帶中的黏著劑層側表面係在使用時爲止藉由剝 離性薄膜予以保護。 此外，黏著劑層亦可利用可在分別以剝離性薄膜層合 由黏著劑所成之層的表背面的狀態下取得者。此時，去除 表面或背面之其中一方剝離性薄膜而露出黏著劑，將該露 ^ 出面黏貼在基材薄膜，藉此可獲得藉剝離性薄膜來保護黏 〇 著劑層的黏著帶。或者，亦可去除表面或背面之其中一方 剝離性薄膜而露出黏著劑，在黏貼於晶圓後，剝離所殘留 的剝離性薄膜而在露出黏著劑層的狀態下將晶圓加工，另 外使黏著帶接觸前述黏著劑層，而將黏著帶與黏著劑層剝 離。 <半導體加工方法> 關於使用上述黏著帶來加工半導體晶圓的方法的一態 〇 樣，一面參照第1圖，一面加以說明。 首先，在加工半導體晶圓1之前，以黏著帶4被覆半 導體晶圓1的外周端緣3。在第1圖中，係沿著半導體晶圓 1的外周，以從捲繞開始位置5起遍及一周以上纏繞黏著 帶4而到達捲繞結束位置6的方式予以被覆。如上所示進 行纏繞，藉此可無間斷地被覆半導體晶圓1的外周端緣3, 可均一地提升對來自外部的衝撞的耐性。此外，可保護半 導體晶圓1的外周端緣3遍及其全周確實地免於受到污 201011820 染。此外，被纏繞在半導體晶圓1的黏著帶4係呈連續的 一條帶體，因此可簡便地由半導體晶圓1去除黏著帶4。 當然’在半導體晶圓1被覆黏著帶4的方法並非限定 於如上所示之方法，亦可使經片斷化的複數條黏著帶4貼 合在半導體晶圓1的外周端緣3或需要保護的部位。 接著，在以黏著帶4所被覆的半導體晶圓1的主表面 2,進行以薄膜形成或圖案化等所謂的電路形成爲目的的各 ^ 種加工。以如上所示之加工而言，係列舉有例如電極部的 鍍敷、光阻的塗佈、電漿蝕刻等。 尤其，亦可進行將半導體晶圓浸漬在鍍敷液，在鍍敷 處理期間，必須在半導體晶圓上保持絕緣部分的無電解鎳 鍍敷。此時，即使黏著劑含有丙烯酸系成分與聚矽氧成分 的黏著帶與水接觸，亦難以由半導體晶圓1脫落，因此較 爲適合。 最後，在加工結束之後，將黏著帶4由半導體晶圓1 © 去除。去除黏著帶4的方法並未特別有所限制，可適當使 用周知方法》 此外，以有別於上述的其他態樣而言，亦可在加工半 導體晶圓1之後，在半導體晶圓1的外周端緣3黏貼黏著 帶4，在經過適當時間後，再將該黏著帶4由半導體晶圓1 剝離。此時，藉由由半導體晶圓1剝離黏著帶4’可免除 因加工而次要地形成在外周端緣3的阻劑等的污染，無須 進行洗淨’即可由半導體晶圓1去除污染。 -10- 201011820 爲了更加具體說明本發明，一面參照第1圖，一面在 以下記述實施例及比較例，惟本發明並非依該等記述而有 所限定。 (實施例） (實施例1 ) 半導體晶圓1係直徑8吋的圓板狀半導體晶圓，具有 主表面2及外周端緣3。將在第1圖（A)之半導體晶圓1的 U 外周端緣3黏貼有黏著帶4的狀態顯示於第1圖（B)、第1 圖（C)。黏著帶4係由第1圖（C)所示之捲繞開始位置5,以 順時針捲繞黏著帶4，纏繞至捲繞超過一周的捲繞結束位 置6。 針對所使用之黏著帶4的製造方法加以說明。 (黏著片的製造） 黏著劑的組成如下所示。丙烯酸酯共聚合體（日本合 成化學公司製N-2993) 100質量份、甲苯二異氰酸酯（日 Ο 本聚胺酯工業公司製Colonate L (註冊商標））2質量份、 胺基甲酸酯丙烯酸酯（荒川化學工業公司製BEAMSET 575 (註冊商標））50質量份、光反應起始劑（汽巴精化公司 (Ciba Specialty Chemicals)製 IRGACURE 907(註冊商標）） 3質量份、含有聚矽氧的成分（綜硏化學公司製 ACTFL0WUTMM-LS2 (註冊商標））2質量份。 將含有該黏著劑的甲苯•乙酸乙酯溶液以30 的厚 度轉印塗刷在作爲基材之經電暈處理的聚乙烯薄膜（厚度 -11- .201011820 30/zm、寬幅300mm)的單面，另外將圖示外的剝離性薄膜 (經塗刷處理聚矽氧系剝離劑的聚對苯二甲酸乙二醋薄 膜）層積在黏著劑表面而製造黏著片° (黏著帶的製造） 將該黏著片以4(TC靜置5天後’裁剪成8mm寬幅而得 黏著帶4。 (效果的確認） ^ 即使將黏貼有黏著帶4的半導體晶圓1(參照第1圖 Ο (B)、（C))浸漬在無電解鎳鍍敷浴，亦不會有黏著帶4剝離， 而可鍍敷在黏著帶4之黏貼面以外的面。鍍敷後，在黏著 帶4以照射量150nU/ cm2照射紫外線而將黏著帶4剝離。 此時在黏著帶4並未發生破裂。而且在黏著帶4剝離後， 即使以10倍光學顯微鏡觀察外周端緣3 (黏貼黏著帶4而 剝落的面），亦沒有殘留糊漿。經對半導體晶圓10片進行 如上所示之試驗，均得到相同的結果。 〇 (比較例1) 除了未含有含有聚矽氧的成分以外，以與實施例1相 同的黏著劑組成來製作黏著帶4，對10片半導體晶圓丨進 行黏貼而進行鍍敷試驗。結果，關於10片中的2片，發現 在黏著帶4與半導體晶圓1之間有鍍敷液浸入，在半導體 晶圓1的主表面2並未被鍍敷。 (比較例2 ) 未黏貼黏著帶4而進行與實施例1相同的無電解鎳鍍 -12- .201011820 敷的結果，並無法鍍敷。確認出在無電解鍍敷，如實施例 1所示，必須要有絕緣部分。 (實施例2) 除了使用含有丙烯酸酯共聚合體（根上工業公司、 W-248E )、亞甲基二異氰酸酯（日本聚胺酯工業公司、 Colonate 2 0 67 )、胺基甲酸酯丙烯酸酯（荒川化學工業公 司、BEAMSET 5 75 )、光反應起始劑（汽巴精化公司（Ciba ❹ Specialty Chemi cals) 、IRGACURE 907)的甲苯.乙酸乙酯 溶液作爲黏著劑以外，係與實施例1相同地製作黏著帶4 而進行鍍敷試驗。 結果，並未發現在黏著帶4與半導體晶圓1之間有鍍 敷液浸入，在半導體晶圓1的主表面2可形成鍍敷。此外， 同樣地可無破裂地進行帶的剝離，甚至即使以10倍光學顯 微鏡觀察外周端緣3(黏貼黏著帶4而剝落的面），亦沒 有殘留糊漿。 〇 (實施例3) 除了將黏著帶4的基材薄膜由聚乙烯薄膜變更爲TP0 (熱可塑性聚烯烴）薄膜（厚度80 A m )以外，係進行與 實施例1相同的方法操作。結果，並未發現在黏著帶4與 半導體晶圓1之間有鍍敷液浸入，在半導體晶圓1的主表 面2可形成鍍敷。此外，同樣地可無破裂地進行帶的剝離， 甚至即使以10倍光學顯微鏡觀察外周端緣3 (黏貼黏著帶 4而剝落的面），亦沒有殘留糊漿。 -13- 201011820 (實施例4) 除了使用含有丙烯酸酯共聚合體（日本合成化學公 司、N3 08 5 )及甲苯二異氰酸酯（日本聚胺酯工業公司、 Colonate L45E)的甲苯•乙酸乙酯溶液作爲黏著劑，使用 TP0 (熱可塑性聚烯烴）薄膜（厚度80 Mm)作爲基材薄膜 以外，係以與實施例1相同的方法而獲得寬幅4mm的黏著 帶4。 ^ 在以氧化膜所被覆的直徑8吋半導體晶圓1的外周端 緣3黏貼黏著帶4。藉由電漿蝕刻來去除主表面2的氧化膜 之後，將黏著帶4剝落，則會殘留有外周端緣3的氧化膜。 藉由黏著帶4，可保護外周端緣3。 (實施例5) 除了使用含有丙烯酸酯共聚合體（日本合成化學公 司、N3085 )及甲苯二異氰酸酯（日本聚胺酯工業公司 (Nippon Polyurethane Industry Co.,Ltd) 、Colonate L45E ) 〇 的甲苯•乙酸乙酯溶液作爲黏著劑以外，係以與實施例l 相同的方法而獲得寬幅3mm的黏著帶4。 在直徑8吋半導體晶圓1的主表面2旋塗光阻。此時， 光阻擴展至外周端緣3»在部分層積有光阻的外周端緣3 黏貼本實施例的黏著帶4。在黏貼後經過20分鐘後再剝落 黏著帶4，可藉由黏著帶4來去除光阻。無須進行洗淨即 可適當地去除擴展至外周端緣3的光阻，可斷絕污染源。 以上根據實施例來說明本發明。該實施例僅爲例示， -14- 201011820 可爲各種變形例，而且該變形例亦在本發明之範圍內乃爲 熟習該項技術者所能理解。 【圖式簡單說明】 第1圖係顯示本發明之實施例之半導體加工方法及其 方法所使用之黏著帶的槪略圖。 【主要元件符號說明】 1 半導體晶圓 © 2 3 外周端緣 4 黏著帶 置置 位位 始束 開結 繞繞 捲捲 5 6 -15-201011820 VI. Description of the Invention: [Technical Field] The present invention relates to a semiconductor processing method including coating an outer peripheral edge of a semiconductor wafer with an adhesive tape during processing, and then removing the semiconductor wafer, and the semiconductor processing method Adhesive tape. [Prior Art] In the processing step of the semiconductor wafer, various processes for forming a so-called circuit such as thin film formation or patterning on the surface of the semiconductor wafer are performed. For example, the plating of the electrode portion, the application of the photoresist, the plasma etching, and the like are exemplified in JP-A-2008-153425 (Patent Document 1). (Patent Document 1) Japanese Laid-Open Patent Publication No. 2008-153425. The processing method as described above is for the purpose of processing the main surface of a semiconductor wafer, but there is a peripheral edge of a semiconductor wafer which does not require processing as described above. Some cases are also processed at the same time, and there is a case where the semiconductor wafer is contaminated or corroded. When the edge of the semiconductor wafer is contaminated, it is generally necessary to wash the contaminated portion with a large amount of cleaning liquid, which causes problems in manufacturing efficiency and environment. Further, when the semiconductor wafer is processed, the outer peripheral edge of the semiconductor wafer which is easily subjected to external impact may be damaged. In addition, even if an electroless nickel plating process that can form a uniform hardness and corrosion resistance and uniform thickness coating is applied to the semiconductor wafer, only the semiconductor wafer is immersed in the plating solution, and the semiconductor wafer cannot be used. The surface is full 201011820 The formation of nickel-phosphorus alloy plating. SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object thereof is to provide a semiconductor processing method and an adhesive tape used in the method, even in the case where the outer peripheral edge of the semiconductor wafer is contaminated by processing. The contamination can be removed without cleaning, and the outer peripheral edge of the semiconductor wafer can be protected from corrosion or impact from the outside, and can be applied by electroless nickel plating. The present inventors have carefully studied the above technical problems. As a result, it was found that the outer peripheral edge of the semiconductor wafer was protected by the adhesive tape before the semiconductor wafer was processed, thereby easily protecting the outer peripheral edge of the semiconductor wafer from contamination or collision, and the like, without the need for peeling. By washing it, the thin film formation process or pattern processing of the semiconductor wafer can be efficiently performed. In addition, it is found that after the semiconductor wafer is processed, an adhesive tape is adhered to the outer peripheral edge of the semiconductor wafer, and then the adhesive tape is peeled off from the semiconductor wafer, and the resistance is formed at the outer peripheral edge by the processing. The contamination of the agent or the like can be simultaneously removed from the semiconductor wafer. In addition, the inventors have found that when performing sufficient electroless nickel plating on the semiconductor wafer, as shown in the following embodiments, it is necessary to be in the semiconductor wafer. Forming an insulating portion. According to the present invention, the outer peripheral edge of the semiconductor wafer is protected by an electrically insulating adhesive tape, whereby the insulating portion is formed on the semiconductor wafer because the adhesive tape is formed, so that it is particularly suitable for performing the main surface of the semiconductor wafer. Electroless nickel plating processing. 201011820 That is, in one aspect, the present invention relates to a semiconductor processing method, including: a step of bonding an adhesive tape to a peripheral edge of a semiconductor wafer during processing of a semiconductor wafer, and a semiconductor wafer The step of removing the aforementioned adhesive tape. Further, the present inventors have found that when the adhesive of the adhesive tape has an acrylic component and a polyfluorene oxide component, it is particularly suppressed that water enters between the semiconductor wafer and the adhesive tape, and the adhesive tape may be difficult to be formed by the semiconductor crystal during processing. The circle is off I. Therefore, the adhesive tape as shown above must be immersed in the liquid in the semiconductor wafer, and must be provided in an electroless nickel plating having an insulating portion during processing, and is particularly stable. That is, in other aspects, the present invention relates to an adhesive tape having an adhesive tape for adhering an adhesive tape to a peripheral edge of a semiconductor wafer and a semiconductor processing method for removing the adhesive tape. The adhesive is characterized in that the adhesive of the adhesive tape has an acrylic component and a polyfluorene component. [Embodiment] Q Hereinafter, embodiments of the present invention will be described. <Adhesive tape> The adhesive tape is preferably one having an adhesive layer provided on one surface of the base film. The width of the adhesive tape is preferably between 2 mm and 10 mm. If the width of the adhesive tape is small, the adhesive tape can easily fall off from the outer peripheral edge of the semiconductor wafer. If the width of the adhesive tape is large, it is difficult to adhere the adhesive tape to the outer peripheral edge of the semiconductor wafer without a gap. 201011820 Copolymerization of olefins and poly. If the adhesion component is separated from the removal edge and the polyalkylene component is processed by propylene or semiconductor, or even the dyeing, the same liquid, the resin material constituting the substrate film is preferably polyethylene or polypropylene. Ethylene diformate, polyethylene naphthalate or the like. The thickness of the base film is between 5/zm and 150/zm, and the thickness of the base film is thin. When the adhesive tape is peeled off from the semiconductor wafer, the adhesive tape is broken and remains on the outer peripheral end of the semiconductor wafer. Capability. Further, when the thickness of the base film is thick, it is difficult to adhere the tape to the outer peripheral edge of the semiconductor wafer without any gap. The adhesive constituting the adhesive layer of the adhesive tape contains both an acrylic acid and a polyoxymethylene component, and is preferably a component containing a combination of an acrylic acid-forming component. If an adhesive containing polyoxymethylene as a main component is used, there is a possibility that xenon is a source of contamination of the semiconductor wafer. In addition, if an acid-based adhesive is used, in the step of washing the main surface of the semiconductor wafer, when the adhesive tape contacts the water, the water is immersed between the wafer and the adhesive tape, and is adhered. The tape is detached from the semiconductor wafer. The adhesive contains both the acrylic component and the polyoxynium component, and the acrylic component and the polyoxynium component are combined, thereby suppressing the contamination of the semiconductor wafer due to the adhesive. Contact with water causes the adhesive tape to detach. The term "water" as used herein refers to a water-soluble solution containing an acid, a base, or an ion. It also includes a plating solution used for electroless nickel plating. The adhesive containing an acrylic component and a polyoxymethylene component can be produced by blending a polyoxymethylene component with an acrylic adhesive in 201011820. The blend ratio is preferably in the range of 0.5 part by mass to 5 parts by mass based on 100 parts by mass of the acrylic adhesive. The polyoxymethylene component may, for example, be a polymer containing polyfluorene oxide in a methacrylate skeleton. It is also preferable to incorporate only the polyoxymethylene component as described above with an acrylic pressure-sensitive adhesive, but it is more preferable to use a component obtained by combining a polyoxymethylene component and an acrylic component. This is based on the fact that when the polyoxynium component is combined with an acrylic component such as acrylate, the bonding force as an adhesive is enhanced. More specifically, for example, a polyfluorene oxide component having a hydroxyl group is bonded to an acrylate copolymer by passing through an isocyanate curing agent. The adhesive may also contain a tackifier for adjusting the adhesion. The adhesive may be any of the ultraviolet detachment type which reduces the adhesive force by the pressure sensitive type or the ultraviolet ray hardening, but it is preferable to form the peeling force of 2N / 10 mm or less with respect to the to-be-obtained material. If the peeling force is too high, it may be difficult to peel off the adhesive tape from the outer peripheral edge of the semiconductor wafer, and the adhesive tape may be broken, and the residual adhesive or the semiconductor wafer may be damaged. The thickness of the adhesive layer is preferably between 0.1 #m and 60//m. If the adhesive layer is thin, there is a possibility that the adhesive tape is detached from the outer peripheral edge of the semiconductor wafer during the adhesion of the adhesive tape or the processing of the semiconductor wafer. On the other hand, if the adhesive layer is thick, it is difficult to peel off. Adhesive tape. The adhesive layer can be formed by directly applying an adhesive to the substrate film. The means for applying the adhesive constituting the adhesive layer to the base film is not particularly limited in 201011820. For example, a solution of the adhesive is applied to one side of the release film, dried, and then transferred to the base film. method. In any method, it is preferred that the side surface of the adhesive layer in the adhesive tape is protected by the peeling film at the time of use. Further, the pressure-sensitive adhesive layer may be obtained by laminating the front and back surfaces of the layer formed of the adhesive by a release film. At this time, one of the surface or the back surface of the release film is removed to expose the adhesive, and the exposed surface is adhered to the base film, whereby the adhesive tape which protects the adhesive layer by the release film can be obtained. Alternatively, one of the surface or the back surface of the release film may be removed to expose the adhesive, and after adhering to the wafer, the remaining peelable film may be peeled off, and the wafer may be processed while the adhesive layer is exposed, and the adhesive may be adhered. The tape is in contact with the aforementioned adhesive layer, and the adhesive tape is peeled off from the adhesive layer. <Semiconductor Processing Method> A method of processing a semiconductor wafer using the above-described adhesive tape will be described with reference to Fig. 1 . First, the outer peripheral edge 3 of the semiconductor wafer 1 is covered with an adhesive tape 4 before the semiconductor wafer 1 is processed. In Fig. 1, along the outer circumference of the semiconductor wafer 1, the adhesive tape 4 is wound over the winding start position 5 over one or more times to reach the winding end position 6. Winding is performed as described above, whereby the outer peripheral edge 3 of the semiconductor wafer 1 can be uninterruptedly covered, and the resistance against impact from the outside can be uniformly improved. Further, the outer peripheral edge 3 of the semiconductor wafer 1 can be protected from being contaminated by the contamination 201011820 throughout its entire circumference. Further, since the adhesive tape 4 wound around the semiconductor wafer 1 is a continuous strip, the adhesive tape 4 can be easily removed from the semiconductor wafer 1. Of course, the method of coating the adhesive tape 4 on the semiconductor wafer 1 is not limited to the above method, and the plurality of the strips 4 can be attached to the outer peripheral edge 3 of the semiconductor wafer 1 or to be protected. Part. Then, on the main surface 2 of the semiconductor wafer 1 covered with the adhesive tape 4, various types of processing for the purpose of so-called circuit formation such as film formation or patterning are performed. For the processing as described above, the series includes, for example, plating of an electrode portion, coating of a photoresist, plasma etching, or the like. In particular, it is also possible to perform electroless nickel plating in which the semiconductor wafer is immersed in the plating solution, and the insulating portion must be held on the semiconductor wafer during the plating process. At this time, even if the adhesive containing the adhesive component of the acrylic component and the polyoxynium component is in contact with water, it is difficult to fall off from the semiconductor wafer 1, and therefore it is suitable. Finally, after the end of the process, the adhesive tape 4 is removed from the semiconductor wafer 1 ©. The method of removing the adhesive tape 4 is not particularly limited, and a well-known method can be suitably used. Further, in addition to the other aspects described above, the semiconductor wafer 1 can be processed after the semiconductor wafer 1 is processed. The end edge 3 is adhered to the adhesive tape 4, and after an appropriate period of time, the adhesive tape 4 is peeled off from the semiconductor wafer 1. At this time, by peeling off the adhesive tape 4' from the semiconductor wafer 1, it is possible to eliminate the contamination of the resist or the like which is formed on the outer peripheral edge 3 by the processing, and it is possible to remove the contamination from the semiconductor wafer 1 without performing the cleaning. -10-201011820 In order to explain the present invention more specifically, the embodiments and the comparative examples are described below with reference to Fig. 1, but the present invention is not limited by the description. (Embodiment) (Example 1) A semiconductor wafer 1 is a disk-shaped semiconductor wafer having a diameter of 8 Å and has a main surface 2 and an outer peripheral edge 3. The state in which the adhesive tape 4 is adhered to the U outer peripheral edge 3 of the semiconductor wafer 1 of Fig. 1(A) is shown in Fig. 1(B) and Fig. 1(C). The adhesive tape 4 is wound by the winding start position 5 shown in Fig. 1(C), wound around the adhesive tape 4 clockwise, and wound around the winding end position 6 where the winding is over one week. A method of manufacturing the adhesive tape 4 to be used will be described. (Manufacture of adhesive sheet) The composition of the adhesive is as follows. Acrylate copolymer (N-2993, manufactured by Nippon Synthetic Chemical Co., Ltd.) 100 parts by mass of toluene diisocyanate (Colonate L (registered trademark) manufactured by Nippon Polyamide Co., Ltd.) 2 parts by mass, urethane acrylate (Arakawa Chemical Co., Ltd.) 50 parts by mass of BEAMSET 575 (registered trademark) manufactured by Industrial Co., Ltd., photoreaction initiator (IRGACURE 907 (registered trademark) manufactured by Ciba Specialty Chemicals Co., Ltd.), 3 parts by mass, and a component containing polyfluorene oxide 2 parts by mass of ACTFL0WUTMM-LS2 (registered trademark) manufactured by Seiko Chemical Co., Ltd. The toluene/ethyl acetate solution containing the adhesive was transferred at a thickness of 30 to a single sheet of a corona-treated polyethylene film (thickness -11-.201011820 30/zm, width 300 mm) as a substrate. On the other hand, a peeling film (a polyethylene terephthalate film coated with a polyfluorinated release agent) is laminated on the surface of the adhesive to form an adhesive sheet (manufacture of an adhesive tape). The adhesive sheet was subjected to 4 (the TC was allowed to stand for 5 days and then cut into a width of 8 mm to obtain an adhesive tape 4. (Confirmation of effect) ^ Even the semiconductor wafer 1 to which the adhesive tape 4 was adhered (refer to Fig. 1 ( B), (C)) is immersed in the electroless nickel plating bath, and the adhesive tape 4 is not peeled off, but may be plated on the surface other than the adhesive surface of the adhesive tape 4. After plating, the adhesive tape 4 is irradiated. The amount of 150 nU/cm2 was irradiated with ultraviolet rays to peel off the adhesive tape 4. At this time, no crack occurred in the adhesive tape 4. Further, even after the adhesive tape 4 was peeled off, the outer peripheral edge 3 was observed even with a 10x optical microscope (adhesive tape 4 peeled off) There is no residual syrup. After testing the 10 wafers of the semiconductor wafer as shown above, The same result. 〇 (Comparative Example 1) The adhesive tape 4 was produced in the same adhesive composition as in Example 1 except that the component containing the polyoxymethylene was not contained, and 10 semiconductor wafers were adhered and plated. As a result, it was found that two of the ten sheets were infiltrated with the plating solution between the adhesive tape 4 and the semiconductor wafer 1, and the main surface 2 of the semiconductor wafer 1 was not plated. (Comparative Example 2) The result of applying the same electroless nickel plating -12-.201011820 as in Example 1 without applying the adhesive tape 4 was not possible. It was confirmed that electroless plating, as shown in Example 1, must be insulated. (Example 2) In addition to the use of an acrylate-containing copolymer (Gold Industrial Co., Ltd., W-248E), methylene diisocyanate (Japan Polyurethane Industry Co., Ltd., Colonate 2 0 67 ), urethane acrylate (Arakawa) The chemical industry company, BEAMSET 5 75 ), the photoreaction initiator (Ciba ❹ Specialty Chemi cals, IRGACURE 907), a toluene, ethyl acetate solution, as the adhesive, was the same as in Example 1. Making adhesive tape 4 The plating test was performed. As a result, it was not found that plating solution was immersed between the adhesive tape 4 and the semiconductor wafer 1, and plating was formed on the main surface 2 of the semiconductor wafer 1. Further, the cracking could be performed in the same manner. The peeling of the tape was carried out, and even if the outer peripheral edge 3 (the surface peeled off by the adhesive tape 4) was observed with a 10x optical microscope, there was no residual paste. (Example 3) except that the base film of the adhesive tape 4 was The same procedure as in Example 1 was carried out except that the polyethylene film was changed to a TP0 (thermoplastic polyolefin) film (thickness: 80 A m ). As a result, it was not found that plating solution was immersed between the adhesive tape 4 and the semiconductor wafer 1, and plating was formed on the main surface 2 of the semiconductor wafer 1. Further, in the same manner, the peeling of the tape can be carried out without cracking, and even if the outer peripheral edge 3 (the surface peeled off by the adhesive tape 4) is observed with a 10x optical microscope, no syrup remains. -13-201011820 (Example 4) In addition to using a toluene/ethyl acetate solution containing an acrylate copolymer (Nippon Synthetic Chemical Co., Ltd., N3 08 5 ) and toluene diisocyanate (Japan Polyurethane Industry Co., Ltd., Colonate L45E) as an adhesive, An adhesive tape 4 having a width of 4 mm was obtained in the same manner as in Example 1 except that a TP0 (thermoplastic polyolefin) film (thickness: 80 Mm) was used as the base film. ^ Adhesive tape 4 is adhered to the outer peripheral edge 3 of the semiconductor wafer 1 having a diameter of 8 Å covered with an oxide film. After the oxide film of the main surface 2 is removed by plasma etching, the adhesive tape 4 is peeled off, and the oxide film of the outer peripheral edge 3 remains. The outer peripheral edge 3 can be protected by the adhesive tape 4. (Example 5) In addition to using a toluene•ethyl acetate solution containing an acrylate copolymer (Nippon Synthetic Chemical Co., Ltd., N3085) and toluene diisocyanate (Nippon Polyurethane Industry Co., Ltd., Colonate L45E) An adhesive tape 4 having a width of 3 mm was obtained in the same manner as in Example 1 except for the adhesive. The photoresist is spin-coated on the main surface 2 of the semiconductor wafer 1 having a diameter of 8 Å. At this time, the photoresist is extended to the outer peripheral edge 3» to adhere the adhesive tape 4 of the present embodiment to the outer peripheral edge 3 in which the photoresist is partially laminated. The adhesive tape 4 is peeled off after 20 minutes after the pasting, and the photoresist can be removed by the adhesive tape 4. The light source extending to the outer peripheral edge 3 can be appropriately removed without washing, and the source of contamination can be cut off. The present invention has been described above based on the embodiments. This embodiment is merely illustrative, and -14-201011820 may be various modifications, and such modifications are also within the scope of the invention as will be understood by those skilled in the art. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing an adhesive tape used in a semiconductor processing method and method of an embodiment of the present invention. [Main component symbol description] 1 Semiconductor wafer © 2 3 Peripheral edge 4 Adhesive tape Placement Position Start beam Open knot Winding Roll 5 6 -15-