200950138 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種發光二極體晶片（LED chip),特別 是指一種封裝於高亮度發光裝置中的發光二極體晶片。 【先前技術】 一般常見的發光裝置，參閱圖丨，主要是由一底座2、 一沿該底座2周緣向上延伸的反射罩21，及一設置於該底座 2的發光二極體晶片3所構成。該發光二極體晶片3包括一 〇 基板31，及一形成在該基板31上的發光膜32。 當施以外加電流時，該發光膜32會以光電效應產生光 子發光，光子自該發光膜32產生後會朝四面八方輻射，其 中，由該發光膜32向下射向該基板31的光子，因為目前該 基板31乡呈頂、底面均|完整平坦的平面態樣，因此大部 分的光子自基板3丨頂面進入基板31中行進，並在接觸到該 底面時直接反射而實質向上回到該發光膜32中或是因全 反射的限制而在該基板31中往復行進，而僅有極小部分的 光有機會自該基板31側周面射出至外界（如圖丨中箭頭所 示）。 如此該等在基板31中往復行進的光子，經過元件本身 的吸收、折射、反射不斷反覆進行，而至該光子能量耗轉成 廢熱而消’失，因而會嚴重地影響該發光二極體晶片的出光效 率（Hght extracting efficiency)，同時也會使得該發光膜32溫 度升高而影響其正常作動；此外，也因為經由反射、折射後 自該基板31侧周面向外射出的光子數量極少，因此可再藉 200950138 由《亥底座2及/或該反射罩21再次反射折射，而實質向頂 面行進發光的光子數量更為稀少，而使得該發光裝置整體的 亮度不如預期。 因此，如何有效增加該發光二極體晶片3自基板31側 周面出光效率’進而提昇該發光裝置的亮度，是目前所需解 決的重要課題之一。 【發明内容】 因此，本發明之目的，即在提供一種高亮度發光裝置的 〇 發光二極體晶片。 於是，本發明的高亮度發光裝置包含一底座、一沿該底 座周緣向上且斜向外延伸的反射罩，及一設置於該底座的發 光二極體晶片。 該發光二極體晶片包括一基板及一發光膜。 該基板具有相反的一底面、一頂面、複數分別自該底面 向該頂面方向延伸的環繞面，及複數分別連接該等環繞面的 基面，該每一環繞面與該連接該環繞面的基面共同界定出一 ® 梯形凹槽，且該每一環繞面與該底面夾設一純角。 該發光膜設置在該基板頂面，可在施加外部電流時以光 電效應產生光子發光。 本發明之功效在於：以基板多數自底面向頂面方向延伸 且夾設呈鈍角的環繞面，改變發光膜發出向基板底面行進的 光的路徑，增加該等光子從該基板側周面向外逸出的機率， 而提兩該發光二極體晶片侧周面的的出光效率，進而再藉由 該底座及/或反射罩的反射與折射將該等光子實質地往該頂 200950138 面方向聚集行進’有效提昇該高亮度發光裝置整體的亮度。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在以 下配合參考圖式之二個較佳實施例的詳細說明中，將可清楚 的呈現。 在本發明被詳細描述之前，要注意的是，在以下的說明 内容中’類似的元件是以相同的編號來表示。 參閲圖2’本發明高亮度發光裝置的發光二極體晶片的 一第一較佳實施例’包含一底座4、一由該基座4周緣斜向 上延伸的反射罩5，及一設置於該底座4的發光二極體晶片 6 ° 該發光二極體晶片6包括一基板61及一發光膜62。該 基板61 ’凡可用來承載該發光膜62的材料均可適用，例如 陶瓷、藍寶石材料等，在本實施例中並不侷限其種類、構成 材料組成’其具有相反的一底面611、一頂面612、複數分別 自該底面611向該頂面612方向斜向内相向延伸的環繞面 613 ’及複數分別連接該等環繞面613頂部的基面614，該每 一環繞面613與該每一基面614分別界定出一梯形凹槽63， 且該任一環繞面613與該底面611夾設一鈍角，其中，該每 —梯形凹槽63的開口孔徑寬為1〜5μιη、深度為〇.8〜2 5μπι， 且該等梯形凹槽63於該基板61的平均單位密度為〇.〇4〜〇2。 該發光膜62係設置於該基板61上並與該底座4電連 接，凡可以光電效應發光的材料組成、結構均可適用，在本 實施例中並不偈限其種類及組成。 200950138 “卜部電流通過該發光膜62時，光子自該發光膜62產 生，其中’當由該發光膜62產生並向該基板61之底面611 方向行進的光子，接觸到該等環繞面613時，由於該每一環 繞面613被設計為與該底自611夹設一純角且該每一梯形 凹槽63的開口孔徑與深度的設定比值為0.16〜2.5,當深寬比 J於0· 16時’因為光子無法通過就無散射效果，反之當深寬 比大於2.5時，則因為梯形凹槽63的密度不足也無法達到 散射效果。因此在該等深寬比限制的梯形凹槽Μ結構下， © 會使得接觸到該每—環繞面613後的該每-光子的反射、折 射角度產生變化，而使得該每一光子的行進方向發生變化， f而反射、折射後自該基板61侧周面射出至外界而可提 升該發光二極體晶片6側周面的出光效率；且該等自該基板 61側周面射出至外界的光子，在接觸到該底座4及/或反射 罩5時被再次反射、折射而可實質向該頂面612方向行進發 光，而可進一步提昇該高亮度發光裝置的整體亮度，而達到 本發明的目的。 β 接著參閱圖3,本發明高亮度發光裝置的發光二極體晶 片的一第二較佳實施例，其結構與該第一較佳實施例相似， 不同處在於該發光二極體晶片6更包括一形成於該底面 611、該等複數環繞面613與該等複數基面614上的反射鏡 64’該反射鏡64可選自由金、鋁、銀、氮化欽、或氧化锆 等金屬為材料所構成，可用來加強反射、折射光子，增加光 子自該基板61侧周面逸出的機率，提昇該基板“側周面的 出光效率。 8 200950138 综上所述，本發明高亮度發光裝置的發光二極體晶片， 藉由在基板形成複數梯形凹槽，且控制該每一梯形凹槽的環 繞面與該底面的夾角為一鈍角、寬深比為016〜25，當由該 發光膜往基板方向行進的光子，因接觸到該等環繞面而產生 反射、折射角度的變化後，可增加由該基板側周面向外射出 的光子數量，而可確實提昇出光效率’且自基板側周面射出 的光子在接觸到該反射罩及/或該底座時可被再次反射、折 射，而實質向該頂面方向行進發光，可進一步提昇該高亮度 © 發光裝置的整體亮度，故確實能達成本發明之目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不能 以此限定本發明實施之範圍，即大凡依本發明申請專利範圍 及發明說明内容所作之簡單的等效變化與修飾，皆仍屬本發 明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一前視示意圖，說明習知發光裝置； 圖2是一前視示意圖，說明本發明高亮度發光裝置的發 Ο 光二極體晶片的第—較佳實施例；及 圖3是一前視示意圖，說明本發明高亮度發光裝置的發 光二極體晶片的第二較佳實施例。 200950138 【主要元件符號說明】 2 底座 61 基板 21 反射罩 62 發光膜 3 發光二極體晶片 63 梯形凹槽 31 基板 64 反射鏡 32 發光膜 611 底面 4 底座 612 頂面 5 反射罩 613 環繞面 6 發光二極體晶片 614 基面 10BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a light emitting diode chip, and more particularly to a light emitting diode chip packaged in a high brightness light emitting device. [Prior Art] A common light-emitting device, as shown in the figure, is mainly composed of a base 2, a reflector 21 extending upward along the periphery of the base 2, and a light-emitting diode chip 3 disposed on the base 2. . The light emitting diode chip 3 includes a germanium substrate 31, and a light emitting film 32 formed on the substrate 31. When an applied current is applied, the luminescent film 32 generates photon luminescence by a photoelectric effect, and the photon is emitted from the luminescent film 32 and is radiated in all directions, wherein the luminescent film 32 is directed downward toward the photon of the substrate 31 because At present, the substrate 31 has a flat top surface and a bottom surface. The majority of the photons travel from the top surface of the substrate 3 into the substrate 31, and directly reflect when contacting the bottom surface to substantially return to the substrate. The luminescent film 32 is reciprocated in the substrate 31 due to the limitation of total reflection, and only a very small portion of the light has a chance to be emitted from the peripheral surface of the substrate 31 to the outside (as indicated by an arrow in FIG. Thus, the photons reciprocating in the substrate 31 are repeatedly subjected to absorption, refraction, and reflection of the element itself, and the photon energy is converted into waste heat to be lost, thereby seriously affecting the LED chip. The Hetch extracting efficiency also increases the temperature of the luminescent film 32 to affect its normal operation. Moreover, since the number of photons emitted from the side surface of the substrate 31 after reflection and refraction is extremely small, The number of photons that are reflected and refracted by the base 12 and/or the reflector 21 can be further re-used by 200950138, and the number of photons that substantially travel toward the top surface is less rare, so that the overall brightness of the illuminating device is not as expected. Therefore, how to effectively increase the light-emitting efficiency of the light-emitting diode wafer 3 from the side surface of the substrate 31 and thereby increase the brightness of the light-emitting device is one of the important issues to be solved. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a luminescent diode chip of a high brightness illuminating device. Accordingly, the high-intensity light-emitting device of the present invention comprises a base, a reflector that extends upwardly and obliquely outward along the periphery of the base, and a light-emitting diode wafer disposed on the base. The light emitting diode chip includes a substrate and a light emitting film. The substrate has an opposite bottom surface, a top surface, a plurality of surrounding surfaces extending from the bottom surface toward the top surface, and a plurality of base surfaces respectively connected to the surrounding surfaces, and the surrounding surfaces are connected to the surrounding surface The base faces together define a ® trapezoidal groove, and each of the surrounding faces is disposed at a pure angle with the bottom surface. The luminescent film is disposed on the top surface of the substrate to generate photon luminescence by a photo-electric effect when an external current is applied. The effect of the invention is that the majority of the substrate extends from the bottom surface toward the top surface and the surrounding surface is disposed at an obtuse angle, and the path of the light emitted by the luminescent film to the bottom surface of the substrate is changed to increase the photon from the side of the substrate. The probability of the light is extracted, and the light-emitting efficiency of the peripheral surface of the light-emitting diode wafer is raised, and then the photons are substantially concentrated toward the top surface of the top surface of the 200950138 by the reflection and refraction of the base and/or the reflector. 'Effectively increase the brightness of the high-intensity light-emitting device as a whole. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the accompanying drawings. Before the present invention is described in detail, it is noted that in the following description, like elements are denoted by the same reference numerals. Referring to FIG. 2, a first preferred embodiment of the LED of the high-intensity illumination device of the present invention includes a base 4, a reflector 5 extending obliquely upward from the periphery of the base 4, and a reflector The LED of the base 4 is 6°. The LED 6 includes a substrate 61 and a luminescent film 62. The substrate 61' can be used for materials that can carry the luminescent film 62, such as ceramics, sapphire materials, etc., in this embodiment, the type and constituent material composition are not limited to 'there is an opposite bottom surface 611, a top a surface 612 ′, a plurality of surrounding surfaces 613 ′ extending obliquely inward from the bottom surface 611 toward the top surface 612 , and a plurality of base surfaces 614 respectively connected to the tops of the surrounding surfaces 613 , each of the surrounding surfaces 613 and each The base surface 614 defines a trapezoidal groove 63, and the any surrounding surface 613 is disposed at an obtuse angle with the bottom surface 611. The opening aperture of each of the trapezoidal grooves 63 is 1~5 μm wide and the depth is 〇. 8~2 5μπι, and the average unit density of the trapezoidal grooves 63 on the substrate 61 is 〇.〇4~〇2. The luminescent film 62 is disposed on the substrate 61 and electrically connected to the pedestal 4. The material composition and structure of the luminescent material can be applied. In this embodiment, the type and composition are not limited. 200950138 "When a portion of the current passes through the luminescent film 62, photons are generated from the luminescent film 62, wherein when a photon generated by the luminescent film 62 and traveling toward the bottom surface 611 of the substrate 61 contacts the surrounding surface 613, Since each of the surrounding faces 613 is designed to have a pure angle from the bottom 611 and the opening aperture to depth of each of the trapezoidal grooves 63 is set to a ratio of 0.16 to 2.5, when the aspect ratio J is 0.16. When there is no scattering effect because the photon cannot pass, when the aspect ratio is greater than 2.5, the scattering effect cannot be achieved because the density of the trapezoidal groove 63 is insufficient. Therefore, under the trapezoidal groove structure with the aspect ratio limitation , © causes a change in the reflection and refraction angle of the per-photon after the contact with each of the surrounding surfaces 613, so that the traveling direction of each photon changes, f is reflected and refracted from the side of the substrate 61 side The surface is emitted to the outside to improve the light extraction efficiency of the peripheral surface of the light emitting diode chip 6; and the photons emitted from the peripheral surface of the substrate 61 to the outside are in contact with the base 4 and/or the reflector 5 Be reflected again, folded While the light can be substantially traveled toward the top surface 612, the overall brightness of the high-intensity light-emitting device can be further improved to achieve the object of the present invention. β Referring next to FIG. 3, the light-emitting diode chip of the high-intensity light-emitting device of the present invention is used. A second preferred embodiment has a structure similar to that of the first preferred embodiment, except that the LED chip 6 further includes a bottom surface 611, the plurality of surrounding surfaces 613, and the plurality The mirror 64' on the base 614 is formed by a metal such as gold, aluminum, silver, nitride, or zirconia, which can be used to enhance reflection and refract photons, and to add photons from the substrate 61. The probability of the side peripheral surface escaping increases the light-emitting efficiency of the side peripheral surface of the substrate. 8 200950138 In summary, the LED of the high-intensity illumination device of the present invention forms a plurality of trapezoidal grooves on the substrate, and controls the angle between the surrounding surface of each trapezoidal groove and the bottom surface to be an obtuse angle. The aspect ratio is 016 to 25, and when photons traveling in the direction of the substrate by the luminescent film are changed in reflection and refraction angle by contact with the surrounding surfaces, the number of photons emitted from the side surface of the substrate can be increased. And the photon emitted from the peripheral surface of the substrate can be reflected and refracted again when it contacts the reflector and/or the substrate, and substantially travels toward the top surface to further enhance the light. High Brightness © The overall brightness of the light-emitting device, so the object of the present invention can be achieved. The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front elevational view showing a conventional light-emitting device; FIG. 2 is a front elevational view showing a first preferred embodiment of a light-emitting diode chip of the high-intensity light-emitting device of the present invention; And Fig. 3 is a front elevational view showing a second preferred embodiment of the light emitting diode chip of the high brightness light emitting device of the present invention. 200950138 [Description of main component symbols] 2 Base 61 Substrate 21 Reflector 62 Illumination film 3 Light-emitting diode chip 63 Trapezoidal groove 31 Substrate 64 Mirror 32 Light-emitting film 611 Bottom surface 4 Base 612 Top surface 5 Reflector 613 Surround surface 6 Illumination Diode wafer 614 base 10