TW200814172A - Dicing/die bonding film - Google Patents

Abstract

The dicing/die bonding film of this invention is provided, an adhesive layer and a bonding layer for die bonding are laminated on a supporting base sequentially, wherein the thickness of the adhesive layer is 10-80 μm, and the elastic modulus of the adhesive layer is 1x10<sp>4<sp>-1x10<sp>10<sp> Pa at 23 DEG C;.

Description

200814172

Zl^OJpil IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a dicing film. Cleavage, sticky wafer, Taiyi 〇ncl (workU 俨曰 on fixed wafer-like workpiece) (Feng V receiving day (chip), etc.) and electrode parts are attached to the workpiece (semiconductor wafer (wafe In the state of 〇, etc., the workpiece can be used for dicing. Further, the present invention relates to the use of the diced, bonded wafer.

A method of fixing a wafer-like workpiece of Cj and a method of manufacturing a semiconductor device. ^ About - (4) A semiconductor device in which a workpiece is fixed in comparison with a method or a manufacturing method. [Prior Art] In the manufacture of a conventional semiconductor device, a silver paste can be used to fix a semiconductor wafer on a lead frame or an electrode member. The related solid processing is carried out by applying a paste on a wafer holder (die pacJ) of a lead frame, and then mounting a semiconductor wafer thereon to harden the slurry. The semiconductor wafer forming the circuit pattern is cut into a semiconductor wafer (dicing step) by adjusting the thickness (backgrind step) by back grinding as needed, by means of an adhesive The semiconductor wafer is fixed to a bonded body such as a lead frame (die attach step), and a wire bonding step is further performed. In the dicing step, in order to remove the cutting chips, the semiconductor wafer is usually cleaned with moderate hydraulic pressure. In the processing step, the adhesive is additionally applied to the lead frame or formed 5 200814172 ziyojpu / left r ' Although it must be disposed from the adhesive, and it is long-term, and the coating is adhered to the 5 The bulletin (page) has been proposed to have a special Japanese-made 曰 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 不仅 不仅 不仅 不仅 不仅 不仅 不仅 不仅 不仅 不仅 不仅 不仅 不仅 不仅 不仅 不仅 不仅 不仅 不仅Moreover, in the case where the crystal grain adheres to the crystal-cutting layer, the adhesive layer is formed by setting the c-type apart from the smear, and the sputum is formed into a wafer and an adhesive layer. Will be "recovered separately, and then through its sticky (four) 4-port ZlEL J~ HTj 〇 here, cleavage, sticky wafer for cutting semiconductor crystal s support substrate and adhesive layer will not peel off the strong adhesion, after 'easy The semiconductor wafer and the adhesive layer are peeled off. The bonded body is formed. (3) The U-square and the lead frame are equal to this, and the dicing and bonding wafers are used for cutting the semiconductor wafer: the substrate and the adhesive layer are not Peeling off the eve of the day, and seeking a second support for the substrate

However, in the case of the dicing or sticky wafer of the above structure, the adhesion of the adhesive layer is difficult. Therefore, it is disclosed that a crystal-cutting or adhesive wafer is formed in such a manner that an adhesive layer is provided between the support substrate layers, and the balance between adhesion and peelability is good (refer to Japanese Patent Laid-Open No. Hei 2 248064). Bulletin (page 1)). Further, in the dicing step, when the semiconductor wafer on which the circuit pattern is formed is cut, there are cases where filamentous chips are generated from the diced wafer or the bonded wafer, and adhered to the semiconductor wafer or the diced or bonded wafer. The filamentous chips are further adhered to the organic substrate or the lead frame or the semiconductor wafer to be bonded, in the following steps, that is, the die bonding step and the bonding wire bonding step, which not only significantly reduces the performance of the device; And make semiconductor wafers a big problem. "The F-bull is low, so the cost invention is based on the above problems, the generation of the chip, the prevention of the semiconductor wafer adhesive sheet; the use of the wafer-like workpiece 2::, the obtained semiconductor device and its manufacture method. 4 猎 由 法 法 【 【 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本The present invention has been completed in structure. The dicing and viscous wafers of the present invention are used to solve the adhesion layer of the enamel layer and the wafer bonding layer, and are sequentially laminated on the y=== crystal and sticky wafer, which is characterized in that: Agent layer = base 2 knife 0 pm, at 23. 〇 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性 弹性It is also in the pre-department area. That is, by cutting the crystal, the cutting depth is stopped within the circumference of the bubble. The 峨 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜It is possible to seek to "part of the wafer-formed part to be broken = less. Further, if the elastic modulus is super. , 2, 7 200814172 V03pir Adhesive for bonding adhesives in the above range of values. However, if it is set to securely fix the workpiece to the dicing die, the degree of work: low, the result is that the piece can be flying or not. ♦ On the enamel sheet, when the dicing is suppressed, =3 is a radiation-curable adhesive layer. Attached to the part:: 曰曰 bonded: the value range of the workpiece on the adhesive layer. Preferably, the elastic modulus of the adhesive layer is such that, at the adhesive interface, the workpiece is attached to the interface of the adhesive layer of the adhesive layer. The above-mentioned disproportionability is greater than the peeling property of the above interface. In the portion corresponding to the adhesive portion corresponding to the attached portion of the patch bonding layer for the wafer bonding, the portion corresponding to the entire portion of the workpiece sticker is formed. Or by forming a loading 槿, ::,,, α, and abbreviated. Part or all of the corresponding part of the work::::: part of the part other than the portion of the adhesive layer and the wafer part = the corresponding zip state. As a result, for example, when the dicing = bonding layer moderately adheres to the bonding of the layer to the wafer, the adhesion of the workpiece is corresponding to the other side, =. Therefore, even if it is easier to use a day-to-day film such as a super knife tb, it will not incur a wafer-shaped workpiece obtained by cutting a large size of mmxl〇mm, and the 彳/Λ义σ is easily peeled off after being diced. At the crystal part, the holding force at the time of picking and the like having excellent pick-up property and the like are better.

Ο 200814172 ziyojpn film. That is, the above structure can appropriately balance the peeling property of the crystal. In the adhesion of the adhesive layer for wafer bonding, the adhesion to the I member of the X-shaped portion is greater than the adhesion to the adhesive layer of the corresponding portion of the workpiece attachment portion. By forming the above-described structure, for example, when picking up a wafer-like workpiece obtained by cutting a workpiece, the wafer-like workpiece can be easily peeled off from the adhesive layer in a state in which the adhesive layer for wafer bonding is attached. Preferably, a part of the portion other than the attachment portion of the workpiece is a cleavage ring attachment portion. Preferably, in the adhesion of the adhesive layer for wafer bonding, the adhesion to the dicing ring of the dicing ring attachment portion is smaller than the adhesive portion of the corresponding portion of the dicing ring attachment portion. The adhesion of the layers. By forming the above structure, the dicing ring can be easily peeled off from the adhesive layer for bonding the wafer, and the adhesive layer for bonding the wafer is prevented from sticking to the dicing ring from the adhesive layer. . Preferably, the adhesive layer for bonding the wafer is provided on a portion of the adhesive layer as a workpiece attaching portion, and in the adhesive layer, the adhesive portion of the portion corresponding to the attached portion of the workpiece The force is less than the adhesion of the other part. Thereby, even when the adhesive layer for bonding the wafer is a structure which is provided on a part of the adhesive layer as the attachment portion of the workpiece, the wafer-shaped workpiece can be attached when the wafer-shaped workpiece is picked up. The adhesive layer is easily peeled off in the state of the adhesive layer for wafer bonding. 200814172 iy\j^u\i ; in the adhesion of the adhesive layer for the bonding of the sun and the moon, the adhesion of the workpiece in the attached part of the workpiece is greater than that of the adhesive layer of the corresponding portion of the workpiece attached to the workpiece. Adhesion. = In the same manner as above, in the case of picking up the wafer-shaped guard, the crystal contents are:: the state in which the adhesive layer of the wafer is bonded, the layer of the green layer is good, and the above-mentioned adhesive layer is borrowed. Hardened by radiation o

The part corresponding to the attachment part of the L piece is made by the second problem to solve the above-mentioned wafer bonding agent = = the above workpiece and the above-mentioned wafer wafer-like workpiece are adhered to the above wafer; the knife crystal coffee - and adhered from the above The step of peeling off the agent layer, the work of attaching a part of the adhesive layer, and the attaching part = 'the step of occupying the body element by the above wafer I. The 曰 dog workpiece is fixed and fixed on the semi-conductive day-day sticky wafer, so when the workpiece is at least more adhesively squeegee-cut, the dicing is positively adhered to the second H = agent layer ^ _ fruit is 'can prevent cut Broken branch material o 〇 200814172 can reduce the fragmentation of wafer-like workpieces. move. As a result, the workpiece can be surely fixed in the case of incision or crystallizing, and the flying piece of the hair is not uniform. The method of fixing the wafer-like workpiece of the second:::=== the bonding agent on the semiconductor component, and bonding the wafer-shaped workpiece to the fixed problem. The manufacturing method of using the above-mentioned device is to solve the above method. The method is characterized in that: the workpiece is formed by bonding the adhesive layer of the adhesive sheet; and the step of splicing the workpiece to the workpiece is performed on the workpiece; the step of forming: upper;: sheet The step of the above-mentioned wafer layer of the workpiece gold is removed; the layer of the above-mentioned wafer is peeled off: the material is bonded to the semiconductor device, and the thickness of the wafer is 10~80 dicing 曰 = 1X104~Ιχ, which prevents the shape π from supporting the fineness of the supporting substrate, while the salty, the class 200814172 21965pif adhesive bonding layer is applied to the semiconductor element. "Adhesive" adheres and fixes the wafer-shaped guard. The present invention exerts the following effects by the above-described method. 10~80 _, at 23 = 曰曰, sticky wafer ’ because of thickness Ο

With the agent layer, it can prevent the cut of the number of 1x104~lxi0] 〇Pa's viscosity to prevent iL from producing a filamentous 4 °. ', the support substrate is smeared, and as a result, the sheet-like workpiece is contaminated. 〃, ', σ 是 是 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝It. The points are omitted, and the parts are shown for convenience of explanation. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a two-faced plan view showing an example of a diced or bonded wafer of the present invention in an embodiment. As shown in the same figure, the dicing wafer 10 is a structure in which an adhesive layer 2, a die bonding adhesive layer 3, and a peelable protective layer 4 are sequentially laminated on a support substrate 1. The support substrate 1 is a strength precursor of the diced, bonded wafer film 10. The support substrate 1 may, for example, be a low density polyethylene, a linear polyethylene, a medium density polyethylene, a high density polyethylene, an ultra low density polyethylene, a random copolymerized polypropylene, or a copolymerized polypropylene. Polyolefins such as homopolypropylene, polybutene, polydecylpentene, ethylene-ethyl acetate copolymer, ethylene-propylene copolymer, ionic polymer resin, ethylene-(mercapto)acrylic acid copolymer, ethylene-(曱Acrylate (random, alternating) copolymer, ethylene-butene copolymer, ethylene hexene copolymer, polyamino phthalate, polyethylene terephthalate, brewing, 200814172

i VUJLMI ♦ polyester such as ethylene glycol dicarboxylate, polycarbonate, polyimine, _, polyimine, polyether phthalimide, polyamine, full aromatic diethylene ether ercoamine De) (paper), broken glass, arginine resin, (4) oxygen listening, including these mixing (four) _ glue ^, quasi-, can also be mentioned as the cross-linking of the above resin, such as polymerization. Further, the support substrate 1 may also be used without extension. and then,

If necessary, it is also possible to use a single-axis or two-axis extension processor. The resin (9) which is provided with heat shrinkability by elongation treatment or the like can be thermally contracted by the support substrate after dicing, and the adhesive layer 2 of the β-coating layer 2 and the wafer is bonded. The bonding area is simple and easy to recover from the sheet-like workpiece.曰曰^Improve the adhesion to the adjacent layer, maintainability, etc., and support the surface of the substrate to be treated with a regular surface. For example, chromic acid dew, fire exposure, high-voltage electric shock exposure _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Further, the electric power, the supporting substrate 1 can also be used for the above-mentioned plastic film, metal, alloy or oxides thereof, and having a thickness of 30 5 0 0 士士&quot; The film of the vapor-deposited layer may be, for example, a laminate in which the ruthenium film is bonded to another film or the other film, and the support substrate 1 may be a single layer or the above-mentioned material of 200814172 = equal to or greater than The layered layer 2 and the agent i 2 are radiated hard & Electrostatic ability. Antistatic dream, under 'can also make it with conductive agent Holding (4) to the adhesive layer, J: adding antistatic agent or metal film, etc., conductive Μ, ° 匕 3 掎 掎 transfer compound or difficult to produce ^ suitable ^ type, better formula. The thickness of the support substrate 1 of the impurity ion of the bulk wafer is, for example, 5~ can be withstand about 3^ by the above heat shrinkage, and if there is a binder, the adhesive for the bonding of the day; 3 #七The thickness is not particularly limited. In addition, the tension ultraviolet rays generated by the layer 3 may be such that the support substrate 1 may have a thickness of 1 〇 through the adhesive layer 2, and the modulus becomes lxlO4~lxl〇lGp μ in C The bow is as early as the range of the adhesive layer 2, and the thickness of the adhesive layer 2 and the elastic mode of the adhesive layer 2 reach the range of the cut value of the effect and effect of the invention for the invention. The model can be fully utilized. The number of the film is in the range of 25_~50_, and the modulus of the 23 (: is set to the above numerical range to prevent the generation of debris), and the fly is prevented from being picked up when the wafer-shaped workpiece is picked up. 200814172 ^iy〇jpn The above-mentioned elastic modulus is especially good for lx "〇V;; better is Pa, it is easy to cut to the support, a. The right elastic modulus is less than xio7 Pa, the dicing step will cause the wafer; the workpiece is filled and the genus is generated. Further, in the die attach step, It is easy to produce a flying piece, and the amount of wear of the cutting blade is increased by the following: (2) =: Further, the thickness of the adhesive layer 2 is described as follows: To prevent wafer profile defect or = value In the encirclement, it is both sexual and so on. As for the corpse #", the Japanese film station uses the adhesive layer; 3 ^ 20 ^ 6 〇 尽 , , ,, preferably 20~70 μιη, more #0疋2〇60 _, especially good is 20~50 _. More preferably, layer 2 is formed by means of a peeling of the adhesive layer 3 from the wafer: 曰 =; relationship (see _). That is,: "The more the piece of the workpiece is bonded with the adhesive layer 3: = miscellaneous adhesive, the interface of the core Β ^ ^ is read as the adhesive layer 3b for wafer bonding) The peelability of A is greater than the peeling of interface B, ",. In order to satisfy the relationship, the adhesive layer 2 is designed, for example, as follows: the portion 2a corresponding to the workpiece attaching portion 3a (described later) (with: '(four) adhesive layer 2a) has a smaller adhesive force than the outer portion The adhesion of the portion 2b (hereinafter sometimes referred to as the adhesive layer 2b) corresponding to all of the components is the same. ^The adhesion of the above adhesive layer 2a is based on the adhesion at normal temperature (23T:) (the value of 90 degree peeling force (peel), the peeling speed is 3 〇〇 _ / _), 200814172 fixed value of wafer value Or the recyclability of the formed wafer is preferably 小于.5 N/2 Gmm or less, more preferably, mm, particularly preferably 0.01 to 0.35 N/20 mm. Another - 〇.42 N / 20 is the adhesive layer 2b adhesion is 〇. 5~2 〇 N / 2 〇 ^ ^ surface 'better of the lower peel adhesion' can also inhibit sticky viscous The generation of the flying piece or the like of the force (10), and the holding force of the enthalpy layer 2b. In the in-plane of the adhesive layer 2 during the processing of 10,000 and DAY, the adhesion-free adhesive is not used. When the adhesive layer 2 is subjected to partial radiation, the degree of crosslinking of the polymer compound constituting the adhesive layer 2 is caused by, for example, an index of adhesion, and the like: Therefore, in the present embodiment, p can be hardened by lowering the body m, and the adhesion can be remarkably lowered. 'Another radiation agent layer 2b is irradiated with radiation, but it can only be filled with eight + not sticky. Layer 2 can be bonded and peeled off with a good balance of the knife; That is, the adhesive agent can be adhered to the adhesive sheet 3 sufficiently, and the adhesive layer and the crystal = 2 = adhesive layer can be easily peeled off, and the pickup property can be improved. Adhesive agent of the agent layer 2 and the above-mentioned radiation hardening type of the present invention is preferably a point of the agent layer 2a and the adhesive layer 2b because the adhesive agent is easily generated by irradiation of a material line or the like: Reduce its _. Therefore, 3 = ^ _ is large, and the easy adhesive layer 23 illuminates the radiation, and the region is lowered in 200814172. Since the adhesive portion 3a of the wafer bonding is located at a bonding force which is hardened and the adhesion is lowered, the agent layer 2a and the workpiece attaching portion 3 χ &amp; The interface of % has a radiation-curable adhesive which is easy to peel off when picking up, and is formed by the adhesive layer 11 which is not irradiated with radiation. Therefore, the adhesive layer 3 of the two pieces of New Nut m can be confirmed. The fixing of the ground-cured radiation-curing adhesive is reduced by 4 times. It is used to bond the workpieces (semiconductor wafers, etc.) or the workpieces such as the slab-like workpieces (the semi-conductive wafer bonding adhesive) The balance of the adhesive layer 3. The adhesive of θ f into the adhesive layer 2 is not particularly limited, and is preferably a two-part, coffee-curable adhesive. The radiation-curable adhesive has a carbon-carbon double bond. Radiation-hardening property (J-based, and adhesiveness is shown. The 5-ray hardening type adhesive agent is exemplified by the above-mentioned acrylic type, rubber-based adhesive, poly-stone-based adhesive, polyethylene coffee) Adding a radiation-curable adhesive to a pressure-sensitive adhesive, a radiation-curable adhesive with a radiation-curable single = a knife or an agglomerate component. Upper = Inductive Adhesive - Not suitable for contaminated electrical parts such as semiconductor wafers or glass Ultrapure water or organic solvent Each of the cleansing and cleaning properties is preferably an acrylic adhesive having an acrylic polymer as a base polymer (_200814172 ζι^ο^ριτ polymer). Examples of the acrylic polymer are as follows: (Alkyl) acrylic acid alkyl vinegar (for example, 曱酉 、, 乙, 丙 、, isopropyl g |, 丁 司, Isobutyl butyl phthalate, second butyl vinegar, glutinous, Isocyanine, hexyl vinegar, heptyl ester, hexyl sulphate, 2-ethylhexyl S, isooctyl, 壬§, vinegar, isophthalic acid, + - silk S, 12 垸The carbon number of the burning base of the thirteen-burning base §|, the fourteen-burning vinegar, the ten-burning vinegar, the eighteen-burning base, and the twenty-burning base is π 3G 'especially miscellaneous f7 4~18 In the case of a linear or branched sulphuric acid vinegar or the like, and (meth)acrylic acid cyclic oxime (for example, cyclopentyl vinegar, cyclohexan vinegar, etc.), 1 or 2 or more monomers are used as a monomer component. The acrylic polymer to be used, etc. Further, the (meth) acrylate vinegar means acrylic acid and/or methacrylate, and the meaning of (meth) in the present invention is the same. The XK compound may be a unit corresponding to the other monomer component which is copolymerized with the above-mentioned (meth) = ring-based ester, as needed, for the purpose of modifying the enthalpy of the XK compound. Examples of the monomer component include acrylic acid, mercaptoacrylic acid, (mercapto)acrylic acid carboxyethyl ester, (mercapto)acrylic acid carboxypentyl ester, methylidene succinic acid, maleic acid, and fumaric acid. a monomer having a carboxyl group such as crotonic acid; an acid anhydride monomer such as maleic acid anhydride or methylene succinic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxyl (meth) acrylate Propyl ester, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, (fluorenyl) a hydroxyl group-containing monomer such as 12-hydroxydodecyl acrylate or (4-hydroxydecylcyclohexyl) decyl acrylate; styrene sulfonic acid, propylene sulfonic acid, 2-(indenyl) propylene oxime Amine_2_mercaptopropanesulfonic acid, (曱18 200814172

Z J VODpiT base) acrylamide propyl sulfonic acid, sulfonyl (mercapto) acrylate propyl monomer containing a secret monomer; a monomer of propylene-oxygen bis group; propylene _, acrylonitrile, and the like. These early components of the χκ σ can be used in two or more species. The amount of the monomer to be used is preferably equal to or less than the weight of the all monomer component = %. It is required that the diacrylic acid polymer can be cross-linked, so that it can be used as a monomer component for copolymerization according to the need, such as the "pregnancy", etc. = monomer can be exemplified by: hexanediol dioxin ^ ^ ) Acrylic vinegar, (poly) glycerol di(meth)acrylic acid vinegar, L j — (f-based (tetra) (tetra), * fine alcohol: (mercapto) acrylic vinegar, ^ 甲 丙 烧 tri (methyl) acrylic acid , pentaerythritol tris(meth)acrylic acid o, 曰, 季, t, tetraol, hexamethyl acrylate, epoxy (meth) acrylate, ^ (methyl) propylene (tetra), amine Formic acid vinegar (meth) acrylic acid vinegar, etc. These bodies may also be seeded or more than two. In terms of adhesion characteristics, etc., the composition of the single (four) is preferably less than or equal to the polymerization of the total monomeric acid. For example, the preparation of the material can be carried out by one or two types, such as a polymerization method or a suspension polymerization method; in terms of a square wafer, etc., it is preferable to suppress the composition of the substance in the low knife. , the correlation average molecular weight is greater than or equal to 3. Two good == Acrylic polymer as a main component, and thus: 200814172 ^ 1 The parent-linked method or the external cross-linking method is suitable Crosslinking type.

o In order to control the crosslinking density of the adhesive layer 2, for example, it is possible to use: a cyanocyanate compound, an epoxy compound, a melamine-based compound, a metal salt compound, or a metal chelate compound. a method of crosslinking treatment by a suitable external crosslinking agent such as a compound, an amine resin compound or a peroxide; or mixing a low molecular compound having two or more carbon-carbon double bonds by energy A method of performing cross-linking treatment such as line irradiation or the like is suitable. In the case of using an external crosslinking agent, the amount thereof can be appropriately determined by the balance with the raw material polymer to be crosslinked, and further depending on the use of the adhesive. In general, it is preferred to add about 5 parts by weight or less, more preferably 0 to 5 parts by weight, based on 1 part by weight of the above-mentioned raw material polymer. Further, in addition to the above components, additives such as various adhesion-imparting agents and anti-aging agents may be used as needed in the adhesive. Examples of the radiation curable monomer component to be added include, for example, an amino decanoate (mercapto) acrylate, a tri-sulfonic acid propyl sulfonate, and a ruthenium ruthenium sulphate. Acrylic acid vinegar, pentaerythritol tris(fluorenyl) acrylate vinegar, pentaerythritol tetrakis(mercapto) acrylate, dipentaerythritol mono-perylene penta(meth) acrylate, dipentaerythritol hexa(meth) acrylate, hydrazine, 4_butyl bis(indenyl) acrylate and the like. In addition, the radiation-curable oligomer component may, for example, be an amino acid vinegar-based, polyether-based, polyester-based, polycarbonate-based or polybutadiene-based compound. 100-30000 ^ Radiation hardening The amount of the monomer component or the oligomer component can be adjusted according to the type of the above-mentioned adhesive layer, and the adhesion is lowered. (4) The adhesive strength is lowered 20 200814172

Zi^ojpn. In general, the raw material polymer such as an acrylic polymer constituting the adhesive is, for example, 5 to a part by weight, preferably about 70 to 150 parts by weight. Further, the radiation-curable adhesive may be an intrinsic type which is used in a polymer side chain or a main chain or has a carbon-% double bond at the end of the main chain, in addition to the above-mentioned added type of radiation hard type-type adhesive. Radiation hardening type adhesion = as the original compound. _In the type of radiation-curing adhesive, it is not necessary to have a low-molecular-weight silk component, or contain bismuth, and oligo! It is preferable that f is active in the adhesive over time to form an adhesive layer of a stable layer structure. Field &amp; t: There is a raw material polymer of stone anti-double bond, which can be made without any limitation, and is characterized by an adhesive bond. Such a raw material polymer is preferably =:: Γ' "poly ruthenium as a basic skeleton. Acrylic polymer 'soil moon' can be listed as the acrylic polymer exemplified above. The introduction of carbon and carbon = limit 'can be used in various ways. In terms of molecular design, carbon, _ stone anti-double bond can easily lead the polymer. For example, on a polymer; after polymerizing a monomer having a functional group, Ξ 有 "" The s-energy group of the base reaction is condensed or = carboxyl and epoxy in a state in which the carbon-carbon double _= bond is radially hardenable. Examples of the combination of these functional light groups and isocyanate-supporting g 3b groups include a combination of an enemy group and an aza-propyl group, a base, and a heterogeneous group, and the ease of reaction tracking.言21 200814172

A combination of Z1 VODpiT groups is suitable. Further, the group 1 - &amp; base group which is an acrylic polymer having the above carbon-carbon double bond by these functional beauty soils, J' and its own may be an acrylic polymer and the above Any of the compounds - ^ ^ g 1 In a preferred combination, it is preferred that the acrylic acid polymer has a case where the compound has an isocyanate group. In the case of the above-mentioned y τ 上述 Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异^ ^ 土^3 / 酉 酉 氧基 氧基 ^ ^ ^ 氧基 、 、 、 氧基 氧基 氧基 氧基 氧基 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 氧基 氧基 氧基 氧基 氧基 氧基 氧基 氧基 氧基 氧基 α (4) copolymerization of a monomer having a surface group of the above-mentioned age or an ether oxime compound of ethylene vinyl ether, 4-hydroxybutyl vinyl ether, di-n-π 'situ The above-mentioned intrinsic radiation curable adhesive can be used alone and the carrier of the carbon double bond (especially the polymer) can be added to the extent that the properties are not impaired. The body component or the oligomer component is usually in a range of less than or equal to 3 parts by weight, preferably 0 to 1 part by weight, based on the weight of the (10) by weight of the raw material polymer-setting hardenable oligomer component. Scope. The radiation-curing adhesive is hardened by ultraviolet rays or the like - The initiator is a photopolymerization hair styling agent, for example, a ethoxylated phenyl (tetra) propyl propyl group, an α yl group, a methyl phenyl phenyl propyl group, a hexyl phenyl ketone ketone, etc. ^酉同22 &amp;, methoxyacetophenone, 2,2. dimethoxy-2-phenylphenyl hydrazine, Ζ〆--ethoxybenthanone, 丨_xiang its basic clothes have been basic Ketone, 2-mercapto-[4-(曱石瓜基)-本基]-2_口口林基丙院4塔贫寺本乙酮糸 compound; benzoin B 22 200814172 Z1vojpn ether, benzoin isopropyl _, Anise _ _ benzoin _ series compounds; 2-methyl-2- phenyl phenyl propyl and other α § homologous compounds, thiol ketal and other condensate compounds; 2 ♦ fine gas and other aromatic galaxies a compound; 1-benzophenone-1, 1-propanol-terminated 2-(m-hexyl)-based photoactive aliphatic compound; benzophenone, benzoquinone benzoic acid, 3_3, dioxin a benzophenone-based compound such as _4_nonoxy dioxin; thioxanthone (thi〇xanth〇ne), 2_ thioxanthone, 2-methylthioxanthone, 2,4-di Thiophenone, isopropyl thioxanthone, 2,4_one gas 嗔 17 ketone ' 2,4-ethyl oxime ketone, 2,4- a isopropyl sigmazone oxime compound such as diisopropyl thiophene ketone, camph〇r〇quinone; a halogenated ketone; acylphosphinoxyde; acylphosphinate. The amount of the photopolymerization initiator added is, for example, about 0.05 to 20 parts by weight based on 1 part by weight of the raw material polymer such as the acrylic polymer constituting the pressure-sensitive adhesive, and the radiation curing type for forming the pressure-sensitive adhesive layer 2 The adhesive agent may, for example, be an addition polymerizable compound having two or more unsaturated bonds and having an epoxy group as disclosed in Japanese Laid-Open Patent Publication No. SHO 60-196956. (Ji Shi Xi;): a rubber-based adhesive or an acrylic-based adhesive which completes a polymerizable compound, and a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine or a rust salt compound. The above-mentioned addition polymerizable compound having two or more unsaturated bonds may, for example, be acrylic acid or mercaptopropionic acid polyol ester or oligoester, epoxy or urethane compound. In general, the amount of the photopolymerizable compound or the photopolymerization initiator added is 10 to 500 parts by weight per 100 parts by weight of the base polymer, and 23 200814172 21965 pif is preferably 0. 05 to 20 parts by weight. In addition to these added components, / if necessary, an epoxy functional crosslinker which may be added to a molecule such as ethylene glycol diglycidyl ether, or may have two or more epoxy groups, and the crosslinking effect of one agent . The adhesive layer 2 which is used in the above-described radiation curable adhesive can contain a compound colored by radiation irradiation as needed. .丄 Also • Radiation irradiation is used to cause the adhesive layer 2 to contain a colored compound to be colored by the portion irradiated with radiation. Thereby, for example, it is also possible to color only the adhesive layer 2a corresponding to the portion 3a. As a result, it is possible to directly determine whether or not the adhesive layer 2 is irradiated with radiation by attaching the pair of eyes, thereby attaching the portion 3a to the workpiece and easily attaching the workpiece. Further, when the semiconductor element is detected by the identification state or the like, the detection accuracy is improved, and when the half warship is picked up, no erroneous operation occurs. , &amp; Everything A compound colored by radiation is a colored or light color before irradiation with radiation, which is a colored compound by radiation irradiation. Preferable specific examples of the phase-closing compound include a leuco dye (leuc〇dye). 〇 leuco dye, preferably used triphenyl decane, fluoran, phenothiazine, Auramine, Spir〇 Pyran). Specifically, 3-[N-(p-phenylphenylamino)]-7-phenylamine fluorescent yellow mother, 3-hepatic (p-phenylene)-N-methylamino]-7-aniline Fluorescent yellow mother, 3_[N_(p-phenylene)ethylamino]-7-phenylamine fluorescent yellow mother, 3-diethylamino fluorenyl 7 & C ^ light page precursor, crystal violet Vinegar (CryStal vi〇let iact〇ne ), 4 _ bis (didecylamino) triphenyl decyl alcohol, 4, 4f, 4n-tris(dimethylamino) 24 200814172 zivcopir triphenyl ketone Wait. The phenol formaldehyde resin used in the above-mentioned colorless (leue.) dyes can be preferably used in combination with the phenol formaldehyde resin which has been used in the past, and the coloring agent can be used in combination with various color formers. . The coloring compound irradiated by the radiation may be contained in the radiation curable adhesive after the solvent or the like, and may be contained in the hybrid 2 in a fine powder form. Preferably, the compounding ratio is used in the adhesive layer 2 to be 〇〇 〜 1 〇 by weight, preferably 疋 0.5 5 mph. If the proportion of the compound is more than 1% by weight, the radiation emitted by the 9 layer 2 will be absorbed by the compound, so that the curing of the adhesive layer 2a may be insufficient. And the adhesion is not fully reduced. On the other hand, when the compound ratio is less than 〇1% by weight, the adhesive sheet may not be sufficiently colored during radiation irradiation, and erroneous operation may occur easily when the semiconductor element is picked up. In the case where the adhesive layer 2 is formed by the radiation-curable adhesive, a part of the portion corresponding to the workpiece attaching portion 3a is formed after the radiation-curable adhesive layer 2 is formed on the support substrate 1. A method of irradiating radiation to harden it to form the adhesive layer 2a. The partial radiation irradiation can be performed through a mask that forms a pattern corresponding to a portion (3b or the like) other than the workpiece attachment portion 3a. Further, a method of curing by ultraviolet light and curing it may be mentioned. The formation of the radiation-curable adhesive layer 2 can be carried out by transferring onto the support substrate 1 by a person provided on a seperator. Partial radiation hardening can also be carried out on the release layer of the 25 o o 200814172 z 1 vcopir ray hardening type to the adhesive layer 2. Further, when the adhesive shape is formed by the radiation-curable adhesive, a supporting substrate can also be used! At least one side of the work gamma \ = 3 part of the part other than the part or part of the light into the radiation hardening type riding (four) 2 after the irradiation of the radiation yarn 1 on the corresponding part of the hardening, can form the adhesion 'lower' _ 2a. The light-shielding material can be formed by using a support film, printing wire plating, or the like. According to this manufacturing method, the crystal cut and sticky wafer of the present invention can be produced. In the evening, when the radiation is irradiated, the oxygen is caused by the inhibition of the hardening of the rice. The father is good by some method of self-radiation hardening type of helium (air). For example, a method of coating a butterfly with a separator: a method of 'methods' or a thickness of the radiation agent 2 for irradiating ultraviolet rays or the like in a nitrogen atmosphere is not particularly limited, and the wafer is prevented from being cut, and the film is fixed and adhered. The combination of the layer and the other is ancient, and it is about 1 to 5 arrays. Preferably, the adhesive layer 3 for the wafer bonding has the following function: the workpiece (the semiconductor day, the Japanese yen, etc.) which is crimped by the click is cut into a wafer shape. When it is mounted on a wafer, it is used as a wafer or a wafer-shaped workpiece piece = (four) layer when the wafer-shaped guard member Jing # (half-mail film, etc.) is mounted. The adhesive layer 3 for wafer bonding, in particular, has a degree of adhesion to the extent that the cut piece does not scatter when the n pieces are cut. , 26 200814172 : Specifically, it is suitable to use 刼月曰. These materials may be individually, soiled, and the adhesive layer 3 of the hardenable adhesive layer is preferably ^^. Also, the wafer wafer: the person who cuts the ring. Better, it can be used as a thermoplastic adhesive for hanging wafer adhesives, hanging under the dish. Ο ' ' 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热Imine-based resin, etc. Further, step (B-Stage)> 疋 desolvation, flaking, mixture of B-fat and thermocohol resin'; thermosetting gum, urethane聚 酉 、 、 聚 聚 聚 、 、 、 、 、 、 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡 橡It can be 歹: ΓΓ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Material, non-consistent transfer temperature*, refining/different thermosetting resin, and 200814172 using two or more layers of multi-layer cutting step using cutting water, so the work piece (semiconductor wafer) Etc.) 3 moisture absorption, to reach the often bear - ... there is a bond between the adhesive layer and the adhesive layer directly The case where i or the like contains 2. If it is in such a high-containing stage, the bonding is performed on the bonding interface, and the sub-processing is performed after the process (afterCure), so that the wafer is bonded with vapor, thereby generating bubbles. The sheet adhesive has a high moisture permeability. In the post-treatment stage, the water vapor can pass through the old. Therefore, the crystal 2 = structure has 4 layers of women, film, and bonding. There is no particular limitation on the adhesion of the workpiece during the dicing, for example, Η(8) is better than 5~50 _. 〇7〇_, the adhesion layer 3 for wafer bonding, which is attached to the workpiece

C. The coating layer _ is better, the force of 4 = scoop # is greater than the adhesion to the adhesive layer 2 &amp; (4) Adhesive strength 'Separation force T Niubei ί part 3a adhesion to the adhesive layer 2a (9 隹 peeling force (Ped) value, peeling speed 300 mm / mir 〇, if better is less than It is equal to Q.5 brain mm, and more preferably 〇.〇丨~Q.42 = 'mm, especially 0.01~0.35 N/20 mm. The adhesion of the workpiece attached to the other part 3a (with the above) The same conditions), just 2 28 200814172

^l^ODpiT: In terms of picking, reliability and pick-up when sticking the wafer, a better 疋 is less than or equal to 10 to 50 N/20 mm, more preferably 1 〇 to 3 〇 N/2 〇 mm. 〇The main agricultural cutting brake uses a dicing ring (wafer ring) as the semiconductor wafer of the workpiece. The dicing and bonding wafer of the present invention can adopt the following structure. Fig. 3 is a cross-sectional schematic view showing another example of the diced and bonded wafer of the present invention. 4疋 is not a plan view of the Ο c case where the semiconductor wafer and the dicing ring are attached to the diced wafer. As shown in Fig. 3, the dicing die, the adhesive wafer u has an adhesive layer 2 on the supporting substrate 1, and the adhesive I 2 has a structure for bonding the adhesive layer 3 for wafer bonding. The adhesive bonding layer 3 for wafer bonding is provided with a dicing ring attaching portion 3b' on a portion of the above portion 3b. Further, the adhesive layer 21 is provided with a dicing ring attaching portion 3b, and the corresponding portion '沘8 &amp; is the adhesive layer 2b'). Further, the peeling force of the adhesive layer 2, the cleavage ring attaching portion 3b, and the adhesive layer 2b formed corresponding thereto is designed such that the peeling force of the interface A is larger than the peeling force of the interface b. relationship. In the adhesive layer 2 of Fig. 2, all of the layers 2b other than the adhesive layer 2a are formed. However, as shown in Fig. 3, the adhesive layer 2a is two: the month 1 is the adhesive layer 2b, and the bismuth can also be used for cutting. The crystal and the adhesive wafer u towel are used to divide the attached portion of the workpiece into the dicing ring attaching portion 3b, in the case of the outer layer 3 of the wafer, the cleavage ring attaching portion 3b, and the tangential ring ::? With the adhesive agent layer 2b, the adhesion is preferably designed to be a pair of tangent t and for the adhesion to the adhesive layer 2b1. Appropriate adjustments are made to the type of cleavage ring. &quot;考力 can be based on cutting crystal 29

200814172 z I ^OJUII 上相相η"Γ Agent layer 3, the adhesive layer 2b, the adhesion (in ί other = piece) 'as mentioned above is better Ο.5~ face 2 - left force (with The above: the same:: piece) sticky::f the agent layer 3, (four) is equal to ... yam, better is 0.5~5 layer 2, the adhesive attached to the workpiece attached part 3a; force is the design ―== Following the adhesion of a; the adhesion of the inch part is less than or equal to. It is preferable that the above is a good coffee, a G.42 gallbladder, and a special one. Fig. 5 is a structure of the adhesive layer for the daily bonding of the present invention. circle. As above; #2, the adhesive layer 2' has a structure of 3&quot; on the adhesive layer 2; , there is a bonding layer for the bonding of the day and the film to the bonding of the 曰 曰 占 占 占 占 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 上述 上述 上述 上述 上述咖, == (4) Μ _ =:: broad aspect, for crystals ^ 2: under the same conditions as above), in terms of the workpiece when cutting, 'pickup aspect' is better than less than: "5t 200814172 The brain surface is better than 1〇~3〇. The 1G~12 wafer bonding is protected by the adhesive layer 3, 3&quot; 22: 4. The protective layer can be arbitrarily set. It has a spectrum 曰μ 4 and a bonding layer 3, 3" for the bonding of the day to the actual seven", "^ as a protective material. Furthermore, the protective layer 4 can be: Adhesive On the layer 2, the adhesive layer 3 for the transfer of the wafer bonding adhesive layer 3 and the layer 4 of the protective layer 4 can be peeled off when the workpiece is attached to the crystal moon bonding layer 3, 3" of the dicing wafers 11 to 12 Leave. The protective layer 4 may be a plastic film of a stripper such as a t (small) (10), polypropylene or a surface coated with a fluorine-based release agent or a long-bonded acryl-based release agent, or a diced or bonded wafer of the present invention. 1G to 12 can appropriately peel off the separator which is arbitrarily disposed on the adhesive layer 3, 3" for the bonding of the ruthenium, and the wafer of the dicing wafer film 1 〇 12 can be obtained in the following manner. Adhesive adhesives a (3") are crimped onto the I piece to hold it in place and secure it. The crimping can be carried out by the usual method. For bonded body parts, for example, a half-body wafer, a multi-layer substrate, and an integral sealing die scale can be used. In the present invention, a semiconductor wafer can be suitably used for being bonded to a moon bean or a workpiece. Then, as shown in Fig. 6, the workpiece is cut into a wafer shape. The same figure shows the profile of the profile. The dicing can be carried out at least until the crystal layer 3 (3', 3") is completely cut. For the adhesive layer 2 (7), i reaches: the kerf sub-blade 13 has a depth of cut to a predetermined value and does not I. Etch. The wafer is formed into a wafer-like workpiece (semiconductor wafer, etc.) by a method of rotating the circular knife "-de" to a workpiece including the adhesion layer 3 for wafer bonding in 200814172 ziyo^pir. Then, the wafer-like workpiece is attached to the workpiece of the adhesive bonding layer 3 for bonding the wafer, and the bonding 3a (or the adhesive bonding layer 3 for wafer bonding) is applied from the adhesive layer 2a of the adhesive layer 2 together. The wafer-shaped workpiece picked up is attached to the semiconductor element as a lion body via the workpiece attaching portion 3a #. The semiconductor element can be exemplified by a lead frame, a TAB film, a substrate, or a wafer-like film 1 The bonded body may be, for example, a deformable bonded body that is easily deformed, or a non-deformable type that is difficult to deform, (semiconductor day, etc.). The bonded body is suitable. It is a semiconductor wafer. When the adhesive layer 3, 3', 3&quot; for the wafer bonding is in the case of a heat-hardening type, it is possible to heat-harden the workmanship, and to improve the resistance. Furthermore, (4) the adhesive bonding layer 3 for bonding the wafer is fixed to the substrate, and the remaining domains may be one (four)=pieces, * or :: lead sheets 1〇~12' to prevent adhesion or peeling, etc. At the time of production, etc.) (4) Calling method to give anti-static ability: suitable for supporting substrates, bonding for sheet bonding Layers 3, 3 ', 3 "= 2 adding the antistatic' method or crystal; attached to the support 1 on a substrate comprising," left foot ^ "film electrically conductive material layer and the like. These methods are preferably a mode in which the impurity ions of the composite or the metal wafer are deteriorated. ^ Produces a conductive substance that may be added under the purpose of semi-conductivity, etc. = = conductivity, improved metal oxidation of heat-transfer metal powder, etc.: silver, Ming, gold, steel, recorded, conductive human filler Listed in, prepared for M w ^ ^ 〇 to equal spherical, needle-like, graphite, etc. 32 200814172

VODpiT Hereinafter, the preferred embodiments of the present invention will be described in more detail. However, the materials, the amounts of addition, and the like described in the examples are not limited thereto, and the scope of the present invention is not limited thereto. A unique example. ^ (Example 1) • On a support substrate comprising a polyethylene film having a thickness of 60, the cloth was dried by a solution of an ultraviolet-curable acrylic adhesive and dried to form an adhesive layer having a thickness of 20. Thereafter, only a portion of the crystal 5 circle is irradiated with ultraviolet rays of 500 mJ/cm 2 through the mask, and an adhesive containing the support substrate and the portion adhered to the wafer which is cured by ultraviolet rays is obtained.

Adhesive film A of the layer. The method for measuring the thickness of the adhesive layer and the irradiation conditions for ultraviolet rays are as follows. The preparation of a solution of an ultraviolet curable acrylic adhesive is as follows. Namely, 70 parts by weight of butyl acrylate, 3 parts by weight of ethyl acrylate, and 5 parts by weight of acrylic acid were copolymerized in ethyl acetate by a usual method to obtain an acrylic polymer having a weight average molecular weight of 800,000. Next, in an amount of 1 part by weight of the acrylic polymer, 0.5 to 5 parts by weight of a polyfunctional epoxy compound is added as a crosslinking agent, and 20 parts by weight of dipentaerythritol or an alcohol monohydroxypentaacrylate is used as light. The polymerizable compound and 1 part by weight of α-radiocyclohexyl phenyl ketone were used as a photopolymerization initiator, and these were uniformly dissolved in toluene as an organic solvent to obtain an acrylic pressure-sensitive adhesive solution having a concentration of 3 〇% by weight. Here, the elastic modulus of the adhesive film enthalpy at 23 ° C was measured. The result is 3xl 〇 8 Pa. The measurement method is detailed below. 33 200814172 -1 The second is owed, and the music is used as a layer of adhesive for the C. That is, it is made of 100 parts by weight of the acid I-based polymer (3 parts by weight of the polyene in the internal olefin as the main component), Paracr0n w_ 197CM), and the resin (Japan) The joint agent, 23 parts by weight of the epoxy part of the phenophene resin (= the upper share) made 'yang (10) 1 difficult), 6 parts dissolved in the 'fu (four) school (share) system, test XLC_LL), earth ethyl ketone, The concentration was adjusted to 2% by weight. ο ο The solution of the benzoate compound is coated on a polycrystalline ruthenium having a thickness of 5G_. Furthermore, the adhesiveness layer of the 2 〇 wafer bonding adhesive layer is performed on the side of the adhesive layer on the driller's amidoxime, and the sinus is known. Cut crystal, sticky wafer. 4 (Centre Example 2) In the κ application, except for the polymerization using butyl acrylate as a main component (Paracron SN-710, manufactured by Gensei Industrial Co., Ltd.) instead of propylene@yiethyl-methacrylic acid The diced or bonded wafer of this example was produced in the same manner as in the above Example 1 except that the oxime ester was polymerized as the main component and the thickness of the adhesive film A was changed to 30 μm. (Example 3) A solution of a virgin-curable acrylic adhesive was applied to a support substrate containing a polyethylene film having a thickness of 80 μm, and dried, 34 200814172 ^1^ϋ!&gt; An adhesive layer having a thickness of 70 is formed. Thereafter, ultraviolet rays of 500 mJ/cm 2 were irradiated only to the portion to which the wafer was attached via the mask, and the adhesive film B including the support substrate and the adhesive layer which was cured by ultraviolet rays on the portion to which the wafer was attached was obtained. The ultraviolet irradiation conditions are as follows. The preparation of a solution of η ο ultraviolet curable acrylic adhesive is as follows. That is, an additive composition containing 50 parts by weight of propionic acid B, 50 parts by weight of butyl acrylate, and 16 parts by weight of 2-hydroxyethyl acrylate was copolymerized in a sputum solution. An acrylic polymer having an average molecular weight of 50,000. Next, 'with respect to 100 parts by weight of the acrylic acid polymer, 2 parts by weight of 2-methylpropenyloxyethyl isocyanate is subjected to an addition reaction, and carbon carbon is introduced into the inner side of the s molecule. Double key. The side key length is 13 original =. Further, with respect to 100 parts by weight of the polymer, a part by weight of a polyfunctional isocyanate crosslinking agent and 3 parts by weight of an acetophenone-based photopolymerization agent are added, and these are uniformly dissolved in toluene as an organic solvent. The above acrylic adhesive solution having a concentration of 20% by weight of rhodium was obtained. The result is 7 elastic modulus of the film B at 231 4xl 〇 7 Pa. Furthermore, the measurement method is described in detail below. =' The adhesive layer A for wafer bonding was produced in the same manner as in the above embodiment except that the thickness was changed to 1 G. Then, the film is transferred to the above-mentioned acrylic adhesive: (Comparative i Γ)' and (4) the diced or bonded wafer of this embodiment. In the same manner as in the above, the thickness of the adhesive layer was set to 100 35 200814172 crystal, and the same as in the wafer application example 1 (Comparative Example 2) except that the thickness of the adhesive layer was set to be the same as μπι. A diced or bonded wafer of this comparative example was produced in the same manner as in the above Example 3 except for _. (Comparative Example 3) On a support substrate of a polyethylene film having a thickness of 60 Å, a solution of an externally-cured acrylic adhesive was applied and dried to form a thickness of 3 G_. Adhesive layer. Thereafter, ultraviolet rays of 500 mJ/cm2 were irradiated only through the mask at the portion of the mask, and the portion of the adhesive layer adhered to the ultraviolet ray was adhered to the adhesive layer. The ultraviolet irradiation conditions are described below. A solution of an acrylic adhesive which can be cured by an external wire is prepared as follows. That is, a monomer mixture containing (10) parts by weight of butyl acrylate and 2 parts by weight of acrylic acid is copolymerized by a usual method using a mixture of 2 (8) parts by weight and G1 parts by weight of 'iso-butyronitrile' to obtain a weight average. The molecule i is an acrylic polymer having a force of 300,000. #次的(10) parts by weight of the acrylic acid polymer, adding 5 parts by weight of a polyfunctional epoxy compound as a parent crosslinking agent, and 5 parts by weight of dipentaerythritol monopyridyl propylene vinegar as f The polymerizable compound, ruthenium by weight of α-fluorenylcyclohexylphenyl copper as a light-supporting &amp; initiator, uniformly dissolved in toluene as an organic solvent, and obtained a concentration of 3 g% by weight of the above-mentioned acrylic Adhesive solution. This measured the elastic modulus of the adhesive film C at 23 °C. The result is 7x10 Pa. Furthermore, the measurement method is described in detail below. The dicing wafer or the adhesive wafer of this comparative example was produced in the same manner as in the above-described embodiment of 200814172, except that the thickness of the adhesive layer was i μΐΏ. (Comparative Example 4) A solution of an ultraviolet curable acrylic adhesive was applied to a support substrate comprising a polyethylene film having a thickness of 60 μm, and dried to form an adhesive layer having a thickness of 30 μm. Thereafter, an ultraviolet ray of 500 mJ/cm 2 is irradiated only to the portion to be attached to the wafer via the mask, and an adhesive film including the support substrate and the adhesive layer which is cured by ultraviolet rays on the attached portion of the wafer is obtained. D. The ultraviolet irradiation conditions are described below. The preparation of a solution of an externally hardened acrylic adhesive is as follows. That is, 200 parts by weight of toluene and hydrazine by weight of azoisobutyronitrile were used in common by a monomer mixture containing 1 part by weight of decyl methacrylate and 5 parts by weight of acrylic acid. Polymerization was carried out to obtain an acrylic polymer having a weight average molecular weight of 400,000. Next, 3 parts by weight of a polyfunctional epoxy compound is added as a crosslinking agent, and 30 parts by weight of dipentaerythritol monohydroxypentaacrylic acid is added as a photopolymerizable compound to 1 part by weight of the acrylic polymer. 3 parts by weight of heart-reduced cyclohexylphenyl group was a U-photopolymerization initiator, and these uniform terms were dissolved in methanol as an organic solvent to obtain a 30% by weight of the above acrylic-based pressure-sensitive adhesive solution. Here, the elastic modulus of the adhesive film D at 231 was measured. The result is 8xl0]GPa. Furthermore, the measurement method is described in detail below. Then, using the adhesive film D, the crystal-cut and sticky wafer of this comparative example was produced in the same manner as in the above Example 1. (Example 4) On a support substrate comprising a polyethylene film having a thickness of 60 μm, a solution of an ultraviolet-curable acrylic adhesive of 37 200814172 ^ j yujnu was applied and dried to form a thickness of 10 μm. Adhesive layer. Thereafter, ultraviolet rays of 500 mJ/cm2 were irradiated only to the portion to which the wafer was attached via the mask, and an adhesive film a containing the adhesive layer of the substrate supported on the wafer and the ultraviolet-cured portion adhered to the wafer was obtained. The method for measuring the thickness of the adhesive layer and the ultraviolet irradiation strip are as described below. o

The preparation of the solution of the externally hardened acrylic adhesive is as follows: 70 parts by weight of butyl acrylate, 30 parts of acrylic acid in the amount of C The method is carried out in a total of 80 里 里 十 为 为 为 为 为 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 : : : : : : : : : : : : : : : : : : A dipentaerythritol solution as a ^2G reread. X wait / Chen degree 18 weight. /. The acrylic was used here to measure the adhesion of the thin layer 8xl〇6Pa. Further, the modulus of elasticity at 23 ° C was measured. As a result, the fabrication of the wafer bonding 1 is as follows. The parts are in the form of ethyl acrylate. In other words, with respect to the 100-weight acid ester-based polymer (propylene 197C]V[) having a ruthenium acrylate as a main component, 3 parts by weight of the epoxy resin of Paracron W~ parts (Japanese; ^ ring f can be isocyanate cross-linking agent, 23 parts by weight of 6 parts by weight of phenol tree wax long hole resin (shares), Epicoat 10〇4], 曰二井化学(股份), Milex 200814172 vo^pir irL), dissolved in methyl ethyl _, and adjusted to a concentration of 2 〇 heavy benzene = = solution r in a pair containing thickness

Detachment treatment of nicotinamide j3T

Dry for 3 minutes, form, /, after, at 12 ° C v war y sub-degree of 2 〇 pm crystal] m a. In addition, the disengagement sound: 田田# ^ Use adhesive agent 丹 has a spider treatment of the binding film is used in μ for poly-oxygen release treatment. γ 乙 一 一 一 no no no no no no , , , , , , , , , , , , , , , , , , , , , , , 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片Sticky wafer. The latter part is applied (Example 5) in this example, except that the acrylic acid compound is used (the root of the work chapter (the D &quot; 制 as the main component of the polyacrylic acid B, the ninth system. n SN -71°) In place of the 物 Ϊ Ϊ 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙 丙The dicing and sticky wafer of the example. 实施 (Example 6) A solution containing a line-hardened acrylic adhesive on a support substrate of a polyethylene film having a thickness of 111, and dried: forming a thickness It is a layer of adhesive of 70 μηι. Thereafter, only 5 〇〇mJ/cm 2 of ultraviolet light is irradiated through the mask to the portion to which the ruthenium (2) is attached, and the portion to be attached to the wafer is exposed to ultraviolet rays. Adhesive film b of the cured adhesive layer. The ultraviolet irradiation conditions are as follows. 】 The solution of the ultraviolet-curable acrylic adhesive is prepared as follows: 200814172 厶1 jpil, that is, the propylene containing the inner portion, % succinic acid butyl vinegar, 16 parts by weight of propylene 2 _ base Copolymerization is carried out in a solution of bismuth benzene, and a weight average molecule of 1 is obtained, and the product is obtained from an acrylic polymer. The amount of 5% in the sub-particle is the next, and the difference is 100 parts by weight relative to the weight of the propylene. 2-methylpropoxy-oxyl cyanate makes 20 η

The inner chain of the polymer molecule leads to the carbon and money bond. The side chain is in the sub. With respect to 100 f parts of the polymer, the "original polyfunctional isocyanate cross-linking agent, 3 parts by weight of the stupid agent" are dissolved in the organic J first: two bows The above-mentioned acrylic adhesive solution having a concentration of 27 is obtained from the above, and the adhesive film b is measured at 23 〇 of the bomb pot 3xl05Pa. Further, the measurement method is described in detail as follows: ..., °, fruit, human '~, In the same manner as in the above, the wafer bonding reducing layer a is produced in the same manner, and then the bonding layer for the bonding of the wafers &amp;

On the side of the adhesive layer on the adhesive film A of the acrylic acid adhesive, the dicing and sticking wafer of the present embodiment were obtained. O (Comparative Example 5) A diced or bonded wafer of the comparative example was produced in the same manner as in the above Example 4 except that the thickness of the adhesive layer was changed to 100 μm. (Comparative Example 6) A solution of an ultraviolet curable acrylic adhesive was applied onto a support substrate comprising a polyethylene film having a thickness of 60 μm, and dried to form an adhesive layer having a thickness of 3 μm. Thereafter, via the mask, only 40 200814172

The portion to which the wafer is attached is irradiated with ultraviolet rays of 500 mJ/cm2 to obtain a film c containing the adhesive layer of the t-holding substrate and the portion adhered to the wafer by ultraviolet rays. The ultraviolet irradiation conditions are as follows. The preparation of a solution of 4 o u ultraviolet-curable acrylic adhesive is as follows. That is, '200 parts by weight of toluene and 0.1 parts by weight of azo isobutyronitrile are copolymerized in a usual manner with a monomer mixture containing 1 part by weight of decyl acrylate and 2 parts by weight of propionic acid. An acrylic polymer having a weight average molecular weight of 300,000. Next, 5 parts by weight of a polyfunctional epoxy compound as a parent binder and 5 parts by weight of dipentaerythritol monohydroxypentaacrylate are added as a photopolymerizable compound to 1 part by weight of the olefinic polymer. 1 part by weight of a hydroxycyclohexyl phenyl ketone was used as a photopolymerization initiator, and these were uniformly dissolved in a ruthenium as an organic solvent to obtain an acrylic pressure-sensitive adhesive solution having a density of 30% by weight. Here, the elastic modulus of the adhesive film enthalpy at 23 ° C was measured. The result is 3xK)3 Pa. Furthermore, the measurement method is described in detail below. First, using the adhesive film c, the crystal-cut and sticky wafer of this comparative example was produced in the same manner as in the above-described Example 1. (Compare ^ column 7). A solution of a UV-curable acrylic adhesive was applied to a support substrate comprising a polyethylene film having a thickness of 6 μ μ μm, and dried to form an adhesive layer having a thickness of 30 μm. Thereafter, ultraviolet rays of 500 mJ/cm2 were irradiated only to the attached portion via the mask, and a tack d including the adhesive layer of the portion * = ^ and the portion adhered to the wafer by the ultraviolet rays was obtained. The ultraviolet irradiation conditions are as follows. 41 200814172 21965 pif The preparation of a UV curable acrylic adhesive is as follows. That is, 200 parts by weight of toluene and hydrazine parts by weight of azoisobutyronitrile are copolymerized in a usual manner with a monomer mixture containing 1 part by weight of methyl acrylate and 5 parts by weight of propionic acid. An acrylic polymer having a weight average molecular weight of 400,000 was obtained. Next, in 100 parts by weight of the acrylic polymer, 3 parts by weight of a polyfunctional epoxy compound is added as a 'crosslinking agent, and 30 parts by weight of dipentaerythritol monohydroxypentaacrylate is used as a light, a polymerizable compound, and 3 parts by weight. The α-hydroxycyclohexyl phenyl ketone was used as a photopolymerization initiator, and these were uniformly dissolved in decyl alcohol as an organic solvent to obtain a 27% by weight of the above acrylic pressure-sensitive adhesive solution. Here, the elastic modulus of the adhesive film d at 23 C was measured. The result is 5 X1 〇1Q P a. Further, the measurement method is described in detail below. Next, using the adhesive film d, the diced and bonded wafer of this comparative example was produced in the same manner as in the above-mentioned Example 4. (Cut-graining and pick-up) Using each of the dicing crystals and the adhesive wafers of Examples 1 to 6 and Comparative Examples 1 to 7, dicing and die-molding of the semiconductor wafer were carried out in the following manner, and each of the crystal cutting and adhesion was evaluated. The performance of the wafer. A semiconductor wafer (with a diameter of 8 inches and a thickness of 0.6 mm) forming a circuit pattern was subjected to back grinding treatment, and a mirror wafer having a thickness of 〇·15 mm was used as a workpiece. The polishing device is DFG-840 (trade name) manufactured by DISCO. The lens wafers were placed on respective diced and bonded wafers, and rolled and bonded at 40 ° C to perform dicing. The bonding is a wafer bonding apparatus manufactured by Nitto Seiki Co., Ltd. 42 200814172 /ivtopir (DR-8500). In addition, the film size of the gem crystal is carried out on a full-day basis to form a square wafer with a length of 5 mm and a diced, bonded wafer cutter: The semi-descriptive method and the dicing conditions after the cutting are detailed, and there is a filamentous genus. The observation of filamentous debris. Further, from each: =: 3⁄4, and the wafer picked up by the flying piece and the pick-up needle was investigated for the presence or absence of debris. The method of defeating is also described in the method of measuring the thickness of the coating layer. The thickness of the adhesive layer was measured by a gauge. T secretion control (dial [ultraviolet irradiation conditions] ultraviolet (UV) irradiation device: Ν; ΕΧΜ-11〇 fine machine (share) system). The name of the mouth, 曰东 u The cumulative amount of ultraviolet light: 500 mJ/cm2 [Method for measuring the modulus of elasticity] The modulus of elasticity is measured using a calibrator (trade name: RSA- Π) manufactured by Rheometric. Measuring strip:: frequency is just 1 Hz, sample thickness is 2 mm, crimping weight is 10 〇 g, π φ is 5 〇 C / min, at (9) art ~ 2 〇〇. In the range of 〇, take 2 2 degrees as the [Cutting condition] value. Cleavage device: DFD — 651 (trade name, DISCO company potential) Crystal cutting speed: 8〇mm/sec 43 200814172 21965pif company) Cutting blade: 2050HECC (commercial rotation number: 40,000 rpm tangential depth of dicing and bonding wafer :μη (Refer to Fig. 6) Cutting method: full-cut, A-mode wafer size·· Square with 5 mm side length [Method of observing filamentous chips] 〇

U. The left and right 3庐 (total 7 lines) including the center line of the cut semiconductor wafer are observed by an optical microscope (9 times), and the number of filaments of the leaf is equal to 10 _ (refer to FIG. 4). The inspection is performed on the surface of the semiconductor wafer and on the surface of the _, and m-break line. It is cut by 0 [extension condition] cm dicing ring: 2 - 8_1 (trade name, manufactured by DISCO, inner diameter 19 5 removal amount: 5 mm die bonder: SPA~3〇〇 (Shangxinchuan system [Debris evaluation method] ^, after picking up (peeling) 5 任意 arbitrary semiconductor wafers ΐ ' 察 察 察 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体Counting is greater than or equal to 2 () called the size. T [Pickup evaluation] When cutting a 5mm x 5mm square semiconductor wafer, Huo (10) + V wins the bottom of the wafer with adhesive attached. Furthermore, at the time of picking, 44 200814172 z 1 Under the high-pressure mercury lamp of 80 WW, the radiation is hardened by the second, and then the 彳f is picked up. As a result, there will be no =, the layer is completed, and the pick-up situation is set. The damage is generated, and the defect is wrong. In the case where the case is X, the evaluation is performed. The second center error is taken (result). As can be seen from Tables 1 and 2 below, in Examples 1 to 6: the filamentous chips are in any of Comparative Example 2. Looking at "oo, about debris, which produced several f in Examples 3 and 4 The state in which the performance of the wafer can be used. It is good that no debris is generated in the first, second, fourth, and fifth embodiments. On the other hand, the crumb can be observed in the comparative examples 3, 3, 45, and 6. The generation is incapable of using the state of the wafer, and further, regarding the generation of the flying sheet, it is not observed at all in the examples, and it is confirmed that it has sufficient adhesion for fixing the semiconductor wafer. On the other hand, comparison In Example 4, a plurality of flyers were observed, and it was confirmed that the adhesiveness of the adhesive layer was insufficient. Further, the crystal cut and the adhesive wafer* of Comparative Example 7 could be attached to the crystal ring, and thus the crystal cutting could not be performed. As a result, it is also clear that if the adhesive layer is thin, the support substrate is cut by the robbing blade, and filamentous chips are easily generated. On the other hand, if the thickness is too thick, chipping occurs, and the semiconductor grade can be confirmed. Significant decline. 45 200814172

Vb!&gt;pit [Table 1] Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Thickness of the adhesive layer (μπι) 20 30 70 100 3 30 30 Elastic modulus ( Pa) 3χ108 3xlQ8 4χ107 3χ108 3χ108 7χ105 8χ1〇10 Thickness of adhesive for wafer bonding 20 (m) 20 10 20 20 20 20 Number of filaments on the surface of the wafer (0) 0 0 0 0 30 0 0 On the back of the wafer Number of filaments (0) 0 0 0 0 17 0 0 Number of filaments on the surface of the diced and bonded wafers (0) 0 0 0 0 120 0 0 Maximum number of wafer defects (number / 50 0) 0 2 35 0 48 26 _Generating flying pieces (one/50 pieces) 0 0 0 0 0 0 35 Picking property (1) 〇〇〇〇〇X 〇[Table 2] Thickness of the coating layer Tang elastic modulus (Pa) H翌Thickness of adhesive used (um) ~ Number of filamentous chips on the surface (number) Number of wafer defects (number) Example 4 10 8χ1〇6 20 Example 5 30 8χ106 20 Example 6 70 3χ105 Comparative Example. 100 3χ106 20 35 Comparative Example 6 30 3χ103 20 48 Comparative Example 30 5χ1010 20 Cannot be crystallized [Simplified drawing] Cross-section crystal 1 of one embodiment of the adhesive wafer Display tangential plane schematic view of the present invention. Miscellaneous test layer 11 曰 面 面 模式 , , , , , , , , , 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体A cross-sectional schematic view of another embodiment of a diced, viscous wafer. Fig. 6 is a schematic cross-sectional view showing a state in which a workpiece is crystallized into a wafer shape. [Main component symbol description] 1 : Support substrate • 2, 2Π: Adhesive layer 2a: Part corresponding to the workpiece attachment part 〇2b: Part or all of the part 2b' other than the workpiece attachment part: Cleavage Portion 3, 31, 3" corresponding to the ring attachment portion: adhesive layer 3a for wafer bonding: workpiece attachment portion 3b': dicing ring attachment portion 3b: portion other than the attachment portion of the workpiece 4: protection Layer I: 10, Η, 12: adhesive wafer 13: cutting blade - A: interface corresponding to 3a B: interface corresponding to 3b interface B': 3b' corresponding to interface 47

Claims (1)

200814172 ^ινο^ριτ X. The scope of application for patents ·············································································· ^ Wafer, which is characterized by: the number is l xl 〇 4 ~ lxl 〇 1 〇 pa. Help! The elastic mode i at 23 °c occupies the wafer' wherein 2 the above-mentioned adhesive layer is a radiation hardening type transfer agent: crystal η 3. As claimed in the patent scope, at least the above-mentioned wafer is adhered The adhesive chip is used to cut, crystallize, and paste the wafer 'in part of it' to satisfy the above adhesive layer paste: Qingjin corresponds to 4. The range of values of the third household number in the patent application scope. The above adhesive layer is bonded to the wafer, and the interface corresponding to the attachment portion of the wafer or the adhesive wafer is formed on the interface of the second: the interface of the above-mentioned work part or all of the corresponding interface. A 5. If the patent application scope is the third item. = The bonding of the adhesive layer to the wafer = 2 The I of the corresponding portion of the workpiece attachment portion occupies the force of the upper part or all of the corresponding part. In the outer part of J, such as the third paragraph of the patent scope of the application, or the sheet: in the above-mentioned wafer bonding, the bonding force of the workpiece attached to the bonded crystal workpiece is large, Corresponding part of the adhesion of the adhesive layer. The attachment part of the workpiece is as follows: 7. The third item or piece of the patent scope of the application, wherein the workpiece attachment part is cut by the outer eight and two f, and the part of the die cutter is a cleavage ring paste 48 η υ 200814172 section. In the dicing and sticking wafer of the sixth item of the upper range, the force of the cleavage ring of the Yin-attached portion is adhered to the affixed portion of the dicing ring to the attached portion of the dicing ring The dicing and heart arrangement described in Item 1 or Item 2: the above agent; in the above adhesive layer, the force of the workpiece is less than the adhesion of the portion other than the film. The adhesion of the portion corresponding to the knives. 10. According to the ninth aspect of the patent application, the adhesion of the adhesive layer of the above-mentioned wafer bonding layer, the adhesion of the part of the workpiece is greater than the adhesive layer of the above-mentioned part. Adhesion. The part corresponding to the heart is 11. If the patent application scope 3 or the blade 'the above adhesive layer is made by radiation hardening type H dicing, the part corresponding to the attached part of the workpiece is justified. status. A wafer-like workpiece fixing method according to any one of the items 1 to 11, wherein: the patent specification includes: a fixing method of the sheet-like workpiece The step of removing the workpiece from the adhesive layer for bonding the wafer; the step of pressing the upper surface pressure x 49 2UU814172 21965pif for the step of bonding the workpiece to the wafer for wafer formation, the upper station layer a step of cutting the wafer-shaped workpiece and the crystal into a crystal; a step of connecting through the wafer; and attaching the workpiece to the attachment portion of the semi-conductive opening, attaching a portion The step of attaching the adhesive layer to the workpiece via the i V-: soil, eu _^, and scooping steps; and the step of bonding the 11 pieces to the semiconductor device. Π, a semiconductor The device is characterized in that, as described in claim 12 of the patent application, the semiconductor device is bonded to the semiconductor device via the fixed square piece of the workpiece of the adhesive layer for bonding the wafer. Attachment part, will be crystal 14·- Any one of items 1 to n of the manufacturing range of the conductor set is a method of manufacturing the device as described in the patent application body, a feed material, a dicing wafer, and a semi-conductive wafer of the adhesive wafer. The method includes the following steps: the step of pressing the workpiece on the attaching portion of the layer to form the wafer of the workpiece into a wafer shape, and the following: the contact layer simultaneously cuts the wafer-shaped workpiece and the second Step of stopping the dicing; step of the conductor element. And the above-mentioned adhesive is adhesively fixed to the semi-A 1 heavy semi-amplifier, which is characterized in that the vehicle is as claimed in the patent application. The wafer-like workpiece is adhered to the semiconductor component by the y y. 200814172 Z1 VODpiT is fixed on the semiconductor component. 〇