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TW200745756A - Positive type photosensitive resin composition and cured coating prepared therefrom - Google Patents

Positive type photosensitive resin composition and cured coating prepared therefrom

Info

Publication number
TW200745756A
TW200745756A TW096102705A TW96102705A TW200745756A TW 200745756 A TW200745756 A TW 200745756A TW 096102705 A TW096102705 A TW 096102705A TW 96102705 A TW96102705 A TW 96102705A TW 200745756 A TW200745756 A TW 200745756A
Authority
TW
Taiwan
Prior art keywords
resin composition
photosensitive resin
film
ingredient
positive photosensitive
Prior art date
Application number
TW096102705A
Other languages
Chinese (zh)
Other versions
TWI411883B (en
Inventor
Tadashi Hatanaka
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW200745756A publication Critical patent/TW200745756A/en
Application granted granted Critical
Publication of TWI411883B publication Critical patent/TWI411883B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/72—Polyisocyanates or polyisothiocyanates
    • C08G18/80—Masked polyisocyanates
    • C08G18/8061—Masked polyisocyanates masked with compounds having only one group containing active hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/64—Macromolecular compounds not provided for by groups C08G18/42 - C08G18/63
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Polyurethanes Or Polyureas (AREA)

Abstract

To provide: a positive photosensitive resin composition which has excellent storage stability and high sensitivity and is reduced in film thickness loss in unexposed areas and which, after film formation even when subjected to burning at a high temperature or a treatment with a resist stripper liquid, retains a high transmittance and suffers no decrease in film thickness; and a cured film which is obtained from the positive photosensitive resin composition and is suitable for use as a film material for various displays, e.g., an array planarization film for TFT liquid-crystal elements. The positive photosensitive resin composition comprises: ingredient (A) which is a thermally crosslinked polymer formed from a base polymer having a functional group capable of undergoing heat curing reaction by bonding the base polymer to itself through a chemical structure comprising two or more heat-crosslinkable groups represented by the formula (1); [Chemical formula 1] formula (1) ingredient (B) which is a compound having two or more blocked isocyanate groups per molecule; ingredient (C) which is a photo-acid generator; and a solvent (D).
TW096102705A 2006-01-25 2007-01-24 Positive type photosensitive resin composition and cured coating prepared therefrom TWI411883B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006016564 2006-01-25

Publications (2)

Publication Number Publication Date
TW200745756A true TW200745756A (en) 2007-12-16
TWI411883B TWI411883B (en) 2013-10-11

Family

ID=38309048

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096102705A TWI411883B (en) 2006-01-25 2007-01-24 Positive type photosensitive resin composition and cured coating prepared therefrom

Country Status (5)

Country Link
JP (1) JP5019055B2 (en)
KR (1) KR101369486B1 (en)
CN (1) CN101374878B (en)
TW (1) TWI411883B (en)
WO (1) WO2007086249A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1904736B (en) 2005-07-25 2012-06-13 日产化学工业株式会社 Positive-type photosensitive resin composition and cured film manufactured therefrom
JP5083568B2 (en) 2007-01-22 2012-11-28 日産化学工業株式会社 Positive photosensitive resin composition
EP2207837B1 (en) * 2007-10-30 2015-03-25 Brewer Science, Inc. Method of forming a microelectronic structure
JP5562651B2 (en) * 2008-01-21 2014-07-30 株式会社ダイセル Chemically amplified photoresist resin and method for producing the same
KR101570447B1 (en) * 2010-03-11 2015-11-19 후지필름 가부시키가이샤 Positive photosensitive resin composition, method for forming cured film, cured film, liquid crystal display device, and organic el display device
JP5734152B2 (en) * 2011-09-30 2015-06-10 富士フイルム株式会社 Photosensitive resin composition, cured film and method for producing the same
KR101989196B1 (en) * 2013-03-14 2019-06-13 동우 화인켐 주식회사 Binder resin
CN103941544A (en) * 2014-01-26 2014-07-23 京东方科技集团股份有限公司 Photoresist, and preparation method and application method thereof
KR102622165B1 (en) * 2014-12-04 2024-01-08 닛산 가가쿠 가부시키가이샤 Positive-acting photosensitive resin composition
CN107357134B (en) * 2016-05-09 2021-12-10 台湾积体电路制造股份有限公司 Composition and method for forming a material layer
WO2020175036A1 (en) * 2019-02-25 2020-09-03 日産化学株式会社 Photosensitive resin composition for microlenses

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0695369A (en) * 1991-10-14 1994-04-08 Sannopuko Kk Photosensitive resin composition
JP3570477B2 (en) * 1997-01-24 2004-09-29 信越化学工業株式会社 High molecular compound and chemically amplified positive resist material
JP4424630B2 (en) 1999-07-13 2010-03-03 三菱レイヨン株式会社 Chemically amplified resist composition and resist pattern forming method
JP4124978B2 (en) * 2001-04-05 2008-07-23 富士フイルム株式会社 Positive resist composition
JP4510759B2 (en) * 2003-05-20 2010-07-28 東京応化工業株式会社 Method for producing chemically amplified positive photoresist composition and method for forming resist pattern
US7329478B2 (en) * 2003-05-22 2008-02-12 Tokyo Ohka Kogyo Co., Ltd. Chemical amplified positive photo resist composition and method for forming resist pattern
JP4131864B2 (en) * 2003-11-25 2008-08-13 東京応化工業株式会社 Chemical amplification type positive photosensitive thermosetting resin composition, method for forming cured product, and method for producing functional device
JP2006003846A (en) * 2004-06-21 2006-01-05 Daito Chemix Corp Chemically amplified photoresist polymer
JP2006003844A (en) * 2004-06-21 2006-01-05 Tokyo Ohka Kogyo Co Ltd Positive resist composition and method for forming resist pattern

Also Published As

Publication number Publication date
CN101374878B (en) 2012-01-18
CN101374878A (en) 2009-02-25
KR101369486B1 (en) 2014-03-05
WO2007086249A1 (en) 2007-08-02
KR20080089485A (en) 2008-10-06
JPWO2007086249A1 (en) 2009-06-18
TWI411883B (en) 2013-10-11
JP5019055B2 (en) 2012-09-05

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees