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TW200737419A - Trench capacitor and method of fabricating the same - Google Patents

Trench capacitor and method of fabricating the same

Info

Publication number
TW200737419A
TW200737419A TW095110654A TW95110654A TW200737419A TW 200737419 A TW200737419 A TW 200737419A TW 095110654 A TW095110654 A TW 095110654A TW 95110654 A TW95110654 A TW 95110654A TW 200737419 A TW200737419 A TW 200737419A
Authority
TW
Taiwan
Prior art keywords
substrate
trench
fabricating
layer
conductive layer
Prior art date
Application number
TW095110654A
Other languages
Chinese (zh)
Other versions
TWI298931B (en
Inventor
Richard Lee
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW95110654A priority Critical patent/TWI298931B/en
Publication of TW200737419A publication Critical patent/TW200737419A/en
Application granted granted Critical
Publication of TWI298931B publication Critical patent/TWI298931B/en

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

A method of fabricating trench capacitors is described. A plurality of trenches is formed in the substrate by performing a patterning process with a patterned mask layer on a substrate. A bottom electrode is formed in the substrate of the surface of the trench. A portion of the patterned mask layer is removed so as to expose a portion of the substrate of the sides of the top of the trench. A capacitor dielectric layer is formed on the substrate and the surface of the trench. A conductive layer is formed over the substrate. The conductive layer is at leas filled into the trench and covered the capacitor dielectric layer. The patterned mask layer and a portion of the conductive layer are removed, and reserved the portion of the conductive layer which covered the capacitor dielectric layer as to form a top electrode.
TW95110654A 2006-03-28 2006-03-28 Trench capacitor and method of fabricating the same TWI298931B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95110654A TWI298931B (en) 2006-03-28 2006-03-28 Trench capacitor and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95110654A TWI298931B (en) 2006-03-28 2006-03-28 Trench capacitor and method of fabricating the same

Publications (2)

Publication Number Publication Date
TW200737419A true TW200737419A (en) 2007-10-01
TWI298931B TWI298931B (en) 2008-07-11

Family

ID=45069536

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95110654A TWI298931B (en) 2006-03-28 2006-03-28 Trench capacitor and method of fabricating the same

Country Status (1)

Country Link
TW (1) TWI298931B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI424489B (en) * 2011-04-29 2014-01-21 Anpec Electronics Corp Method for fabricating a semiconductor power device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI424489B (en) * 2011-04-29 2014-01-21 Anpec Electronics Corp Method for fabricating a semiconductor power device

Also Published As

Publication number Publication date
TWI298931B (en) 2008-07-11

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