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TW200723521A - Metal oxide semiconductor devices and film structures and methods - Google Patents

Metal oxide semiconductor devices and film structures and methods

Info

Publication number
TW200723521A
TW200723521A TW095109364A TW95109364A TW200723521A TW 200723521 A TW200723521 A TW 200723521A TW 095109364 A TW095109364 A TW 095109364A TW 95109364 A TW95109364 A TW 95109364A TW 200723521 A TW200723521 A TW 200723521A
Authority
TW
Taiwan
Prior art keywords
semiconductor devices
methods
metal oxide
oxide semiconductor
film structures
Prior art date
Application number
TW095109364A
Other languages
Chinese (zh)
Inventor
Yung-Ryel Ryu
Tae-Seok Lee
Henry W White
Original Assignee
Moxtronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Moxtronics Inc filed Critical Moxtronics Inc
Publication of TW200723521A publication Critical patent/TW200723521A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Layered and film structures for improving the performance of semiconductor devices include single and multiple quantum wells and double heterostructures and suplerlattice structures.
TW095109364A 2005-12-06 2006-03-17 Metal oxide semiconductor devices and film structures and methods TW200723521A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/295,686 US20070126021A1 (en) 2005-12-06 2005-12-06 Metal oxide semiconductor film structures and methods

Publications (1)

Publication Number Publication Date
TW200723521A true TW200723521A (en) 2007-06-16

Family

ID=38117828

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095109364A TW200723521A (en) 2005-12-06 2006-03-17 Metal oxide semiconductor devices and film structures and methods

Country Status (2)

Country Link
US (1) US20070126021A1 (en)
TW (1) TW200723521A (en)

Cited By (4)

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CN103688366A (en) * 2011-04-11 2014-03-26 国家科学研究中心 Semiconductor heterostructure and photovoltaic cell including such a heterostructure
TWI449224B (en) * 2011-02-25 2014-08-11 Univ Nat Chiao Tung Light emitting semiconductor device
TWI453820B (en) * 2009-03-18 2014-09-21 Taiwan Semiconductor Mfg Semiconductor device and the fabrication method thereof
TWI829379B (en) * 2021-10-12 2024-01-11 南韓商Ｗｉｔ有限公司 Large area monitoring apparatus

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JP4949836B2 (en) * 2003-08-29 2012-06-13 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ System and method for encoding and decoding enhancement layer data using descriptive model parameters
US7723154B1 (en) 2005-10-19 2010-05-25 North Carolina State University Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
JP4258536B2 (en) * 2006-08-11 2009-04-30 独立行政法人産業技術総合研究所 Method for producing crystallized metal oxide thin film
US20080044590A1 (en) * 2006-08-21 2008-02-21 National Institute Of Advanced Industrial Science And Technology Manufacturing Method of Phosphor Film
WO2008073469A1 (en) * 2006-12-11 2008-06-19 Lumenz, Llc Zinc oxide multi-junction photovoltaic cells and optoelectronic devices
US8159002B2 (en) 2007-12-20 2012-04-17 General Electric Company Heterostructure device and associated method
US8373152B2 (en) * 2008-03-27 2013-02-12 Lg Innotek Co., Ltd. Light-emitting element and a production method therefor
TW200949004A (en) * 2008-04-25 2009-12-01 Lumenz Inc Metalorganic chemical vapor deposition of zinc oxide
EP2304780A1 (en) * 2008-05-21 2011-04-06 Lumenz, Inc. Zinc-oxide based epitaxial layers and devices
US8373153B2 (en) * 2009-05-26 2013-02-12 University Of Seoul Industry Cooperation Foundation Photodetectors
US8367925B2 (en) * 2009-06-29 2013-02-05 University Of Seoul Industry Cooperation Foundation Light-electricity conversion device
US8748862B2 (en) * 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8227793B2 (en) * 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
US8395141B2 (en) 2009-07-06 2013-03-12 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8809834B2 (en) 2009-07-06 2014-08-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
US8368990B2 (en) * 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure
US8368047B2 (en) * 2009-10-27 2013-02-05 University Of Seoul Industry Cooperation Foundation Semiconductor device
US8058641B2 (en) 2009-11-18 2011-11-15 University of Seoul Industry Corporation Foundation Copper blend I-VII compound semiconductor light-emitting devices
US7829376B1 (en) 2010-04-07 2010-11-09 Lumenz, Inc. Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
IT1402406B1 (en) * 2010-10-22 2013-09-04 St Microelectronics Srl METHOD OF MANUFACTURING A SENSOR DEVICE OF A GASEOUS SUBSTANCE OF INTEREST.
US20120126239A1 (en) * 2010-11-24 2012-05-24 Transphorm Inc. Layer structures for controlling stress of heteroepitaxially grown iii-nitride layers
CN102157598A (en) * 2010-12-03 2011-08-17 中国科学院苏州纳米技术与纳米仿生研究所 Solar blind detector based on magnesium-nickle oxide thin film and manufacturing method thereof
US9053737B2 (en) * 2010-12-22 2015-06-09 Seagate Technology Llc Heat assisted magnetic recording devices
WO2012095920A1 (en) * 2011-01-14 2012-07-19 パナソニック株式会社 Ultraviolet light emitting material, method for producing same, and light emitting element using same
CN102820366A (en) * 2011-06-10 2012-12-12 中国科学院物理研究所 Silicon-based heterojunction ultraviolet detector and manufacturing method thereof
CN102412334A (en) * 2011-11-10 2012-04-11 中山大学 BeZnO-based ultraviolet light detector with MSM structure and preparation method thereof
JP6547273B2 (en) * 2013-12-26 2019-07-24 株式会社リコー p-type oxide semiconductor, composition for producing p-type oxide semiconductor, method for producing p-type oxide semiconductor, semiconductor element, display element, image display device, and system
KR20160025455A (en) * 2014-08-27 2016-03-08 서울바이오시스 주식회사 Light emitting device and method for manufacturing the same
WO2017003408A1 (en) * 2015-06-27 2017-01-05 Intel Corporation Method to form ohmic contacts to semiconductors using quantized metals
CN106356715A (en) * 2015-07-16 2017-01-25 中国科学院苏州纳米技术与纳米仿生研究所 Semiconductor laser and preparation method thereof
CN105717675B (en) * 2016-04-21 2018-09-11 哈尔滨工业大学 The preparation method of terahertz wave band electrically-controlled liquid crystal phase-shifter based on polymeric transparent electrode
CN115036380B (en) * 2022-04-25 2023-12-08 西安电子科技大学 Solar blind ultraviolet detector with pin structure and preparation method thereof
KR20240040191A (en) * 2022-09-20 2024-03-28 삼성디스플레이 주식회사 Light emitting element, manufacturing method for light emitting element, and display device including light emitting element

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JP2885198B2 (en) * 1996-09-18 1999-04-19 日本電気株式会社 P-type electrode structure and semiconductor light emitting device having the same
US6057561A (en) * 1997-03-07 2000-05-02 Japan Science And Technology Corporation Optical semiconductor element
US6674098B1 (en) * 1999-07-26 2004-01-06 National Institute Of Advanced Industrial Science And Technology ZnO compound semiconductor light emitting element
TW550839B (en) * 2001-07-25 2003-09-01 Shinetsu Handotai Kk Light emitting element and method for manufacturing thereof
US7172813B2 (en) * 2003-05-20 2007-02-06 Burgener Ii Robert H Zinc oxide crystal growth substrate
US7227196B2 (en) * 2003-05-20 2007-06-05 Burgener Ii Robert H Group II-VI semiconductor devices
JP2005340765A (en) * 2004-04-30 2005-12-08 Sumitomo Electric Ind Ltd Semiconductor light emitting element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI453820B (en) * 2009-03-18 2014-09-21 Taiwan Semiconductor Mfg Semiconductor device and the fabrication method thereof
TWI449224B (en) * 2011-02-25 2014-08-11 Univ Nat Chiao Tung Light emitting semiconductor device
CN103688366A (en) * 2011-04-11 2014-03-26 国家科学研究中心 Semiconductor heterostructure and photovoltaic cell including such a heterostructure
CN103688366B (en) * 2011-04-11 2016-04-27 国家科学研究中心 Semiconductor heterostructure and the photovoltaic cell comprising this heterostructure
TWI829379B (en) * 2021-10-12 2024-01-11 南韓商Ｗｉｔ有限公司 Large area monitoring apparatus

Also Published As

Publication number Publication date
US20070126021A1 (en) 2007-06-07

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