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TW200728493A - Material and method of producing silicon dioxide hard coating on plastic substrate - Google Patents

Material and method of producing silicon dioxide hard coating on plastic substrate

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Publication number
TW200728493A
TW200728493A TW095102481A TW95102481A TW200728493A TW 200728493 A TW200728493 A TW 200728493A TW 095102481 A TW095102481 A TW 095102481A TW 95102481 A TW95102481 A TW 95102481A TW 200728493 A TW200728493 A TW 200728493A
Authority
TW
Taiwan
Prior art keywords
silicon dioxide
plastic substrate
hard coating
dioxide hard
producing silicon
Prior art date
Application number
TW095102481A
Other languages
Chinese (zh)
Other versions
TWI316562B (en
Inventor
Dai-Shan Liu
Yu-Ke Liao
Cheng-Yang Wu
sheng-zhi Lai
Original Assignee
Univ Nat Formosa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Formosa filed Critical Univ Nat Formosa
Priority to TW095102481A priority Critical patent/TW200728493A/en
Publication of TW200728493A publication Critical patent/TW200728493A/en
Application granted granted Critical
Publication of TWI316562B publication Critical patent/TWI316562B/zh

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  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)

Abstract

This invention provides material and method of producing silicon dioxide hard coating on plastic substrate in which an organic molecule of tetramethylsilane is used as one of the reactants under low temperature with higher stability, easier operation capability and low facilities cost. Oxygen is added with proper proportion as another reactant of the chemical reaction. Silicon dioxide hard coating is produced on the surface of plastic substrate with plasma enhanced chemical vapor deposition method. The silicon dioxide hard coating deposited on the surface of the plastic substrate has excellent uniformity and hardness. By using the above-mentioned material and its preparartion method, not only the defect of non-uniform thickness for the film prepared by traditional dipping deposition method is replaced but also the value added and industrial competition capability of the product is enhanced.
TW095102481A 2006-01-23 2006-01-23 Material and method of producing silicon dioxide hard coating on plastic substrate TW200728493A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095102481A TW200728493A (en) 2006-01-23 2006-01-23 Material and method of producing silicon dioxide hard coating on plastic substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095102481A TW200728493A (en) 2006-01-23 2006-01-23 Material and method of producing silicon dioxide hard coating on plastic substrate

Publications (2)

Publication Number Publication Date
TW200728493A true TW200728493A (en) 2007-08-01
TWI316562B TWI316562B (en) 2009-11-01

Family

ID=45073258

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095102481A TW200728493A (en) 2006-01-23 2006-01-23 Material and method of producing silicon dioxide hard coating on plastic substrate

Country Status (1)

Country Link
TW (1) TW200728493A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110158057A (en) * 2019-06-05 2019-08-23 承德石油高等专科学校 A kind of pecvd process chamber bye-pass device and its air-channel system at place

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110158057A (en) * 2019-06-05 2019-08-23 承德石油高等专科学校 A kind of pecvd process chamber bye-pass device and its air-channel system at place
CN110158057B (en) * 2019-06-05 2024-05-03 承德石油高等专科学校 PECVD process chamber branch pipeline device and gas circuit system thereof

Also Published As

Publication number Publication date
TWI316562B (en) 2009-11-01

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees