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TW200725168A - Mask blanks, and method of producing a transfer mask - Google Patents

Mask blanks, and method of producing a transfer mask

Info

Publication number
TW200725168A
TW200725168A TW095138659A TW95138659A TW200725168A TW 200725168 A TW200725168 A TW 200725168A TW 095138659 A TW095138659 A TW 095138659A TW 95138659 A TW95138659 A TW 95138659A TW 200725168 A TW200725168 A TW 200725168A
Authority
TW
Taiwan
Prior art keywords
light
mask
etching
film
resist film
Prior art date
Application number
TW095138659A
Other languages
Chinese (zh)
Inventor
Megumi Takeuchi
Masahiro Hashimoto
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200725168A publication Critical patent/TW200725168A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

In a mask blank 1 including a light-transmitting substrate 11 with a light-shielding film 12 and a resist film 14 deposited thereon, the resist film 14 has an etching rate not higher than a half of that of the light-shielding film 12 in dry etching using an etching gas containing a chlorine-based gas. Therefore, even if, in order to meet a design rule having a line width or a space width of about 65 nm, the thickness of the resist film 14 is reduced to suppress the aspect ratio to 4 or less, preferably 3 or less, so as not to cause collapse or destruction of a resist pattern 140 upon development of the resist film 14, the resist pattern 140 is not etched but continues to exhibit a function as a mask until completion of etching of the light-shielding film 12.
TW095138659A 2005-10-20 2006-10-20 Mask blanks, and method of producing a transfer mask TW200725168A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005305292A JP2007114451A (en) 2005-10-20 2005-10-20 Mask blank and method for manufacturing transfer mask

Publications (1)

Publication Number Publication Date
TW200725168A true TW200725168A (en) 2007-07-01

Family

ID=37962547

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095138659A TW200725168A (en) 2005-10-20 2006-10-20 Mask blanks, and method of producing a transfer mask

Country Status (3)

Country Link
JP (1) JP2007114451A (en)
TW (1) TW200725168A (en)
WO (1) WO2007046454A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI572972B (en) * 2008-03-31 2017-03-01 Ｈｏｙａ股份有限公司 Photo mask blank, photo mask and manufacturing method for semiconductor integrated circuit
TWI610124B (en) * 2011-05-19 2018-01-01 Ｈｏｙａ股份有限公司 Mask blank substrate, mask blank, reflective mask blank, transfer mask, and reflective mask, as well as methods of manufacturing the same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5201813B2 (en) * 2006-09-15 2013-06-05 Ｈｏｙａ株式会社 Mask blank and mask manufacturing method
US7955516B2 (en) * 2006-11-02 2011-06-07 Applied Materials, Inc. Etching of nano-imprint templates using an etch reactor
JP2008304689A (en) * 2007-06-07 2008-12-18 Toppan Printing Co Ltd Method for forming pattern, imprint mold and photomask
JP2011123426A (en) * 2009-12-14 2011-06-23 Toppan Printing Co Ltd Photomask blank and method for manufacturing photomask
JP6944255B2 (en) * 2017-03-14 2021-10-06 Hoya株式会社 Manufacturing method of transfer mask and manufacturing method of semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61268028A (en) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Development of mask image in photoresist
JP2932488B2 (en) * 1989-03-16 1999-08-09 ソニー株式会社 Dry etching method
JP2593611B2 (en) * 1991-06-11 1997-03-26 エイ・ティ・アンド・ティ・コーポレーション Lithography etching method
JP4780264B2 (en) * 2001-05-16 2011-09-28 信越化学工業株式会社 Method for forming chromium-based photomask
JP4020242B2 (en) * 2001-09-28 2007-12-12 Ｈｏｙａ株式会社 Mask blank and mask
JP2003177549A (en) * 2001-12-07 2003-06-27 Fujitsu Ltd Method of forming pattern, method of manufacturing thin-film magnetic head and thin-film magnetic head

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI572972B (en) * 2008-03-31 2017-03-01 Ｈｏｙａ股份有限公司 Photo mask blank, photo mask and manufacturing method for semiconductor integrated circuit
TWI610124B (en) * 2011-05-19 2018-01-01 Ｈｏｙａ股份有限公司 Mask blank substrate, mask blank, reflective mask blank, transfer mask, and reflective mask, as well as methods of manufacturing the same

Also Published As

Publication number Publication date
WO2007046454A1 (en) 2007-04-26
JP2007114451A (en) 2007-05-10

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