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TW200705651A - Image sensors including active pixel sensor arrays - Google Patents

Image sensors including active pixel sensor arrays

Info

Publication number
TW200705651A
TW200705651A TW095125019A TW95125019A TW200705651A TW 200705651 A TW200705651 A TW 200705651A TW 095125019 A TW095125019 A TW 095125019A TW 95125019 A TW95125019 A TW 95125019A TW 200705651 A TW200705651 A TW 200705651A
Authority
TW
Taiwan
Prior art keywords
active
image sensors
sensor arrays
pixel sensor
active pixel
Prior art date
Application number
TW095125019A
Other languages
Chinese (zh)
Other versions
TWI310607B (en
Inventor
Duck-Hyung Lee
Kang-Bok Lee
Seok-Ha Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050061968A external-priority patent/KR20070006982A/en
Priority claimed from KR1020050068103A external-priority patent/KR100703979B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200705651A publication Critical patent/TW200705651A/en
Application granted granted Critical
Publication of TWI310607B publication Critical patent/TWI310607B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

In one aspect, an image sensor is provided which includes an array of unit active pixels. Each of the unit active pixels comprises a first active area including a plurality of photoelectric conversion regions, and a second active area separated from the first active area. The first active areas are arranged in rows and columns so as to define row and column extending spacings there between, and the second active areas are located at respective intersections of the row and column extending spacings defined between the first active areas.
TW095125019A 2005-07-09 2006-07-10 Image sensors including active pixel sensor arrays TWI310607B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050061968A KR20070006982A (en) 2005-07-09 2005-07-09 Read out element shared type image sensor with improved light receiving efficiency
KR1020050068103A KR100703979B1 (en) 2005-07-26 2005-07-26 2 shared type image sensor with improved light receiving efficiency and fabrication method thereof

Publications (2)

Publication Number Publication Date
TW200705651A true TW200705651A (en) 2007-02-01
TWI310607B TWI310607B (en) 2009-06-01

Family

ID=37617520

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095125019A TWI310607B (en) 2005-07-09 2006-07-10 Image sensors including active pixel sensor arrays

Country Status (3)

Country Link
US (1) US7541628B2 (en)
JP (1) JP2007020194A (en)
TW (1) TWI310607B (en)

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TWI395475B (en) * 2007-08-21 2013-05-01 Sony Corp Image pickup apparatus
TWI413242B (en) * 2007-08-10 2013-10-21 Hon Hai Prec Ind Co Ltd Solid image sensor
TWI673858B (en) * 2015-11-18 2019-10-01 美商豪威科技股份有限公司 Hard mask as contact etch stop layer in image sensors

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US7683407B2 (en) * 2005-08-01 2010-03-23 Aptina Imaging Corporation Structure and method for building a light tunnel for use with imaging devices
US7557419B2 (en) * 2006-07-21 2009-07-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and apparatus for preventing or reducing color cross-talk between adjacent pixels in an image sensor device
US8053287B2 (en) * 2006-09-29 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making multi-step photodiode junction structure for backside illuminated sensor
JP4420039B2 (en) * 2007-02-16 2010-02-24 ソニー株式会社 Solid-state imaging device
KR100835892B1 (en) * 2007-03-26 2008-06-09 (주)실리콘화일 Chip stacking image sensor
JP5214904B2 (en) * 2007-04-12 2013-06-19 ルネサスエレクトロニクス株式会社 Manufacturing method of solid-state imaging device
KR100851495B1 (en) 2007-05-14 2008-08-08 매그나칩 반도체 유한회사 Small pixel for image sensors with jfet and vertically integrated reset diodes
KR100851494B1 (en) 2007-05-14 2008-08-08 매그나칩 반도체 유한회사 Small pixel for cmos image sensors with vertically integrated set and reset diodes
KR20080104589A (en) * 2007-05-28 2008-12-03 삼성전자주식회사 Cmos image sensor layout for removing a difference of gr and gb sensitivity
US8072015B2 (en) 2007-06-04 2011-12-06 Sony Corporation Solid-state imaging device and manufacturing method thereof
KR100904716B1 (en) * 2007-06-13 2009-06-29 삼성전자주식회사 Image sensor with improved light receiving efficiency
JP2009038263A (en) * 2007-08-02 2009-02-19 Sharp Corp Solid-state imaging element, and electronic information apparatus
DE102007045448A1 (en) * 2007-09-24 2009-04-02 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg image sensor
JP2011114324A (en) 2009-11-30 2011-06-09 Sony Corp Solid-state imaging device and electronic apparatus
JP5780711B2 (en) * 2010-04-06 2015-09-16 キヤノン株式会社 Solid-state imaging device
TWI502212B (en) * 2013-01-11 2015-10-01 Pixart Imaging Inc Optical apparatus, light sensitive device with micro-lens and manufacturing method thereof
JP6246076B2 (en) * 2014-06-05 2017-12-13 ルネサスエレクトロニクス株式会社 Semiconductor device manufacturing method and semiconductor device
CN113658966B (en) * 2015-02-27 2024-05-17 索尼公司 Semiconductor device and electronic apparatus
JP2017054966A (en) * 2015-09-10 2017-03-16 ルネサスエレクトロニクス株式会社 Method of manufacturing semiconductor device and semiconductor device
KR102519178B1 (en) * 2015-09-25 2023-04-06 삼성전자주식회사 Image sensor including color separation element and image pickup apparatus including the image sensor
KR102554417B1 (en) 2018-06-18 2023-07-11 삼성전자주식회사 Image sensor

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US6107655A (en) * 1997-08-15 2000-08-22 Eastman Kodak Company Active pixel image sensor with shared amplifier read-out
JP3337976B2 (en) * 1998-04-30 2002-10-28 キヤノン株式会社 Imaging device
US6977684B1 (en) * 1998-04-30 2005-12-20 Canon Kabushiki Kaisha Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus
JP3524391B2 (en) * 1998-08-05 2004-05-10 キヤノン株式会社 Imaging device and imaging system using the same
US6734906B1 (en) 1998-09-02 2004-05-11 Canon Kabushiki Kaisha Image pickup apparatus with photoelectric conversion portions arranged two dimensionally
US6657665B1 (en) * 1998-12-31 2003-12-02 Eastman Kodak Company Active Pixel Sensor with wired floating diffusions and shared amplifier
US6693670B1 (en) * 1999-07-29 2004-02-17 Vision - Sciences, Inc. Multi-photodetector unit cell
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JP2001250931A (en) * 2000-03-07 2001-09-14 Canon Inc Solid-state image sensor and image sensing system using the same
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US7489352B2 (en) * 2002-11-15 2009-02-10 Micron Technology, Inc. Wide dynamic range pinned photodiode active pixel sensor (APS)
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US7755116B2 (en) * 2004-12-30 2010-07-13 Ess Technology, Inc. Method and apparatus for controlling charge transfer in CMOS sensors with an implant by the transfer gate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI413242B (en) * 2007-08-10 2013-10-21 Hon Hai Prec Ind Co Ltd Solid image sensor
TWI395475B (en) * 2007-08-21 2013-05-01 Sony Corp Image pickup apparatus
TWI673858B (en) * 2015-11-18 2019-10-01 美商豪威科技股份有限公司 Hard mask as contact etch stop layer in image sensors

Also Published As

Publication number Publication date
US20070007559A1 (en) 2007-01-11
TWI310607B (en) 2009-06-01
JP2007020194A (en) 2007-01-25
US7541628B2 (en) 2009-06-02

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