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TW200643713A - Storage device, memory managing apparatus, memory managing method, and program - Google Patents

Storage device, memory managing apparatus, memory managing method, and program

Info

Publication number
TW200643713A
TW200643713A TW095111563A TW95111563A TW200643713A TW 200643713 A TW200643713 A TW 200643713A TW 095111563 A TW095111563 A TW 095111563A TW 95111563 A TW95111563 A TW 95111563A TW 200643713 A TW200643713 A TW 200643713A
Authority
TW
Taiwan
Prior art keywords
bpt
current
block
memory managing
information
Prior art date
Application number
TW095111563A
Other languages
English (en)
Inventor
Hiroshi Ippongi
Original Assignee
Tokyo Electron Device Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Device Ltd filed Critical Tokyo Electron Device Ltd
Publication of TW200643713A publication Critical patent/TW200643713A/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/10—Address translation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/14—Error detection or correction of the data by redundancy in operation
    • G06F11/1402—Saving, restoring, recovering or retrying
    • G06F11/1415—Saving, restoring, recovering or retrying at system level
    • G06F11/1435—Saving, restoring, recovering or retrying at system level using file system or storage system metadata
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Library & Information Science (AREA)
  • Quality & Reliability (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Read Only Memory (AREA)
TW095111563A 2005-03-31 2006-03-31 Storage device, memory managing apparatus, memory managing method, and program TW200643713A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005104207A JP2006285600A (ja) 2005-03-31 2005-03-31 記憶装置、メモリ管理装置、メモリ管理方法及びプログラム

Publications (1)

Publication Number Publication Date
TW200643713A true TW200643713A (en) 2006-12-16

Family

ID=37073619

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111563A TW200643713A (en) 2005-03-31 2006-03-31 Storage device, memory managing apparatus, memory managing method, and program

Country Status (6)

Country Link
US (1) US20080104361A1 (zh)
EP (1) EP1864223A4 (zh)
JP (1) JP2006285600A (zh)
KR (1) KR100849446B1 (zh)
TW (1) TW200643713A (zh)
WO (1) WO2006107086A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI413931B (zh) * 2009-01-15 2013-11-01 Phison Electronics Corp 快閃記憶體資料之存取方法及其儲存系統與控制系統
TWI622924B (zh) * 2016-05-31 2018-05-01 晨星半導體股份有限公司 資料儲存方法及資料儲存裝置

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101288056A (zh) * 2006-03-13 2008-10-15 松下电器产业株式会社 闪速存储器用的存储控制器
JP2009211202A (ja) * 2008-02-29 2009-09-17 Toshiba Corp メモリシステム
CN101681313A (zh) * 2008-02-29 2010-03-24 株式会社东芝 存储器系统
WO2009110303A1 (en) * 2008-03-01 2009-09-11 Kabushiki Kaisha Toshiba Memory system
JP4551938B2 (ja) * 2008-03-01 2010-09-29 株式会社東芝 メモリシステム
JP4558052B2 (ja) * 2008-03-01 2010-10-06 株式会社東芝 メモリシステム
JP4551939B2 (ja) * 2008-03-01 2010-09-29 株式会社東芝 メモリシステム
US20090327837A1 (en) * 2008-06-30 2009-12-31 Robert Royer NAND error management
CN102314396B (zh) * 2010-07-06 2014-01-29 旺宏电子股份有限公司 区块为基础闪存的字节存取的方法与装置
JP5659178B2 (ja) * 2012-03-16 2015-01-28 株式会社東芝 不揮発性記憶装置及び不揮発性メモリの制御方法
JP5996228B2 (ja) * 2012-03-26 2016-09-21 株式会社ダイヘン ロボット制御装置
JP2016071447A (ja) * 2014-09-26 2016-05-09 ラピスセミコンダクタ株式会社 不揮発性記憶装置及び不揮発性記憶装置の制御方法
CN110908925B (zh) * 2018-09-17 2022-01-25 慧荣科技股份有限公司 高效能垃圾收集方法以及数据存储装置及其控制器
US10884954B2 (en) 2018-09-17 2021-01-05 Silicon Motion, Inc. Method for performing adaptive locking range management, associated data storage device and controller thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100359414B1 (ko) * 1996-01-25 2003-01-24 동경 엘렉트론 디바이스 주식회사 데이타독출/기록방법및그를이용한메모리제어장치및시스템
JP3589033B2 (ja) 1998-06-25 2004-11-17 東京エレクトロンデバイス株式会社 フラッシュメモリシステム
US7620769B2 (en) * 2000-01-06 2009-11-17 Super Talent Electronics, Inc. Recycling partially-stale flash blocks using a sliding window for multi-level-cell (MLC) flash memory
JP4037605B2 (ja) * 2000-12-04 2008-01-23 株式会社東芝 不揮発性メモリユニットのコントローラ、同コントローラを有するメモリシステム及び不揮発性メモリユニットの制御方法
US7013376B2 (en) * 2000-12-20 2006-03-14 Hewlett-Packard Development Company, L.P. Method and system for data block sparing in a solid-state storage device
JP4129381B2 (ja) * 2002-09-25 2008-08-06 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP4058322B2 (ja) * 2002-10-07 2008-03-05 株式会社ルネサステクノロジ メモリカード
JP4211385B2 (ja) * 2002-12-20 2009-01-21 パナソニック株式会社 半導体メモリカードおよび管理情報更新方法
JP2005085011A (ja) * 2003-09-09 2005-03-31 Renesas Technology Corp 不揮発性メモリ制御装置
US7412560B2 (en) * 2004-12-16 2008-08-12 Sandisk Corporation Non-volatile memory and method with multi-stream updating

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI413931B (zh) * 2009-01-15 2013-11-01 Phison Electronics Corp 快閃記憶體資料之存取方法及其儲存系統與控制系統
TWI622924B (zh) * 2016-05-31 2018-05-01 晨星半導體股份有限公司 資料儲存方法及資料儲存裝置

Also Published As

Publication number Publication date
US20080104361A1 (en) 2008-05-01
WO2006107086A1 (en) 2006-10-12
KR100849446B1 (ko) 2008-07-31
JP2006285600A (ja) 2006-10-19
KR20070034999A (ko) 2007-03-29
EP1864223A1 (en) 2007-12-12
EP1864223A4 (en) 2009-01-21

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