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TW200628969A - Method of producing a mask blank for photolithographic applications, and mask blank - Google Patents

Method of producing a mask blank for photolithographic applications, and mask blank

Info

Publication number
TW200628969A
TW200628969A TW094126829A TW94126829A TW200628969A TW 200628969 A TW200628969 A TW 200628969A TW 094126829 A TW094126829 A TW 094126829A TW 94126829 A TW94126829 A TW 94126829A TW 200628969 A TW200628969 A TW 200628969A
Authority
TW
Taiwan
Prior art keywords
mask blank
layer
front side
photolithographic applications
producing
Prior art date
Application number
TW094126829A
Other languages
Chinese (zh)
Inventor
Lutz Aschke
Frank Sobel
Gunter Hess
Hans Becker
Markus Renno
Frank Schmidt
Oliver Goetzberger
Original Assignee
Schott Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott Ag filed Critical Schott Ag
Publication of TW200628969A publication Critical patent/TW200628969A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The invention relates to a method of producing a mask blank (1) for photolithographic applications, particularly in EUV lithography, comprising the steps of: providing a substrate (2) which has a front side (4) and a rear side (3); depositing an electrically conductive layer (5) on the rear side of the substrate; depositing a coating on the front side of the substrate, wherein the coating comprises at least a first layer (6) and a second layer (9); and structuring the coating (6, 9) for photolithographic applications; wherein a respective handling area (22; 22a-22c) is formed on the front side (4) at least at one predefined location, said handling area not being structured for photolithographic applications and being designed for the handling of the mask blank (1) by means of a mechanical clamp or handling device, and wherein the first layer (6) is exposed in the respective handling area (22; 22a-22c) so that, when the mask blank (1) is handled from the front side, the mechanical clamp or handling device bears against the first layer (6). The invention furthermore relates to a corresponding mask blank.
TW094126829A 2004-08-06 2005-08-08 Method of producing a mask blank for photolithographic applications, and mask blank TW200628969A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004038548A DE102004038548A1 (en) 2004-08-06 2004-08-06 Mask blank manufacturing method for photolithography processing, involves designing handling portion so that multilayered layer on front surface of substrate is exposed in each handling portion and pressed by mechanical clamp

Publications (1)

Publication Number Publication Date
TW200628969A true TW200628969A (en) 2006-08-16

Family

ID=35853431

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094126829A TW200628969A (en) 2004-08-06 2005-08-08 Method of producing a mask blank for photolithographic applications, and mask blank

Country Status (4)

Country Link
JP (1) JP2006049910A (en)
KR (1) KR20060050241A (en)
DE (1) DE102004038548A1 (en)
TW (1) TW200628969A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456338B (en) * 2012-06-04 2014-10-11 Nanya Technology Corp Reflective mask

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008072706A1 (en) 2006-12-15 2008-06-19 Asahi Glass Company, Limited Reflective mask blank for euv lithography, and substrate with function film for the mask blank
JP5292747B2 (en) * 2007-09-14 2013-09-18 凸版印刷株式会社 Reflective photomask for extreme ultraviolet
KR101396849B1 (en) * 2007-09-28 2014-05-19 주식회사 에스앤에스텍 Blank mask and photomask which has deposition layer on backside, And the process method of thereof
DE102011079933A1 (en) * 2010-08-19 2012-02-23 Carl Zeiss Smt Gmbh Optical element for UV or EUV lithography
JP5609663B2 (en) 2011-01-18 2014-10-22 旭硝子株式会社 Glass substrate holding means and EUV mask blank manufacturing method using the same
KR20140016662A (en) 2012-07-30 2014-02-10 에스케이하이닉스 주식회사 Mask for extrem ultra violite lithograpghy and method for fabricating the same, method for correcting mask registration error
US9377679B2 (en) * 2012-07-31 2016-06-28 Hoya Corporation Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device
JP2015025894A (en) * 2013-07-25 2015-02-05 株式会社エスケーエレクトロニクス Photomask and manufacturing method of photomask
DE102016110351B4 (en) * 2016-06-03 2019-08-29 Carl Zeiss Meditec Ag Process for producing an optical element
JP7057248B2 (en) * 2018-08-03 2022-04-19 Hoya株式会社 How to manufacture mask blanks and imprint molds
US11294271B2 (en) 2020-04-30 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Mask for extreme ultraviolet photolithography

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JPS61151333U (en) * 1985-03-12 1986-09-18
JPS6370524A (en) * 1986-09-12 1988-03-30 Fujitsu Ltd Resist coating method
JPH01142636A (en) * 1987-11-30 1989-06-05 Hoya Corp Exposing method and photomask blank used in this exposing method and holder for photomask blank
JPH021851A (en) * 1988-06-09 1990-01-08 Nec Corp Mask blank for electron ray exposing
JPH03212916A (en) * 1990-01-18 1991-09-18 Matsushita Electric Ind Co Ltd Multilayer thin film capacitor
JPH0440456A (en) * 1990-06-06 1992-02-10 Matsushita Electron Corp Manufacture of photomask
JP3193863B2 (en) * 1996-01-31 2001-07-30 ホーヤ株式会社 Transfer mask manufacturing method
JPH09306808A (en) * 1996-05-14 1997-11-28 Toshiba Mach Co Ltd Mask blank conductive structure
JPH11149152A (en) * 1997-11-17 1999-06-02 Dainippon Printing Co Ltd Grounding method and photomask blanks
WO2000075727A2 (en) * 1999-06-07 2000-12-14 The Regents Of The University Of California Coatings on reflective mask substrates
JP2001291661A (en) * 2000-04-07 2001-10-19 Fujitsu Ltd Method of manufacturing reflection type mask
US6737201B2 (en) * 2000-11-22 2004-05-18 Hoya Corporation Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device
JP3939132B2 (en) * 2000-11-22 2007-07-04 Ｈｏｙａ株式会社 SUBSTRATE WITH MULTILAYER FILM, REFLECTIVE MASK BLANK FOR EXPOSURE, REFLECTIVE MASK FOR EXPOSURE AND ITS MANUFACTURING METHOD, AND SEMICONDUCTOR MANUFACTURING METHOD
US6803156B2 (en) * 2001-08-01 2004-10-12 Infineon Technologies Richmond, Lp Electrostatic damage (ESD) protected photomask
DE10239858B4 (en) * 2002-08-29 2005-08-11 Infineon Technologies Ag Method and device for compensating for unevenness in the surface of a substrate
DE10317792A1 (en) * 2003-04-16 2004-11-11 Schott Glas Blank mask for use in EUV lithography and process for its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456338B (en) * 2012-06-04 2014-10-11 Nanya Technology Corp Reflective mask

Also Published As

Publication number Publication date
JP2006049910A (en) 2006-02-16
DE102004038548A1 (en) 2006-03-16
KR20060050241A (en) 2006-05-19

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