TW200522252A - Adhesive sheet for producing semiconductor device, semiconductor device therewith, and manufacturing method therefor - Google Patents
Adhesive sheet for producing semiconductor device, semiconductor device therewith, and manufacturing method therefor Download PDFInfo
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- TW200522252A TW200522252A TW093133583A TW93133583A TW200522252A TW 200522252 A TW200522252 A TW 200522252A TW 093133583 A TW093133583 A TW 093133583A TW 93133583 A TW93133583 A TW 93133583A TW 200522252 A TW200522252 A TW 200522252A
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- lead frame
- adhesive sheet
- resin
- circuit board
- adhesive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Adhesive Tapes (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
200522252 九、發明說明： [發明所屬之技術領域] 本發明係有關可用以製造半導體裝置 經由使用該黏性片而製造的半導 ’片’有關 裝例如叫==造中，亦即，半導體封 導線竿心： 片以可剝離之形式黏附在 >木4电路板（winng board)。本申請案主張2 月7日提出申請的曰本專利申請案第2〇〇3_37川 ^ 先權，其内容以引用方式併於本文。 、 [先前技術] 等二:由：!Γ器例如手提式個人電腦、行動電話 寺要μ小化、衣成更為薄、且製成多功㊣，因此有 =度:二零件’並將構成電子裝置的電子零：高度 木積化:在此寺狀況之下，平面安裝伽e-m_t)型半導體 裝置，稱為“CSP”，亦即晶片尺寸封裝（啊〜心㈨ 即成為注意焦點’而取代了 QFp (四方平板封裝（Wad胸 Package))和S0P(小尺寸封裝（Small Out—卩他㈣。於 CSP中，且特別是在QFN (無導腳四方平板（Quad Flat Non-lead))之中，因為QFN(無導腳四方平板（如^ Fw Non-iead))可使用傳統半導體農置所用之製造技術製造，所 以主要係適用為具冑100個或更少個接腳的低端子數型 (low-number-of-terminal-type)半導體妒置。 於後文中，係參照第5A至5D圖來解說傳統QFN的 製造方法。第5A至5D圖顯示於qFN製造中之斷面圖， 316466 5 200522252 其係以相對於導線架的半導體裝置之安裝表面垂直切割。 首先，如第5A圖中所顯示，先製備具有眾多半導體裝置 女裝零件（晶粒座部份（die-pad portion)) 12 1與沿著半導體 裝置安裝零件（晶粒座部份（die-pad portion》121周緣裝設 有許多導腳122的導線架12〇,然後於該導線架12〇的表 面上黏附上黏性片110，該黏性片11〇具有黏著層ιΐ2與 形成於該黏著層11 2上面的耐熱性基底材料丨丨}。接著， 如第5B圖中所顯示者，在導線架12〇的各個半導體裝置 安裝零件121上面安裝半導體裝置13〇，將半導體裝置no _ 與導線架120的導腳122分別透過銲線131連接起來，及 使用模塑樹脂（moldmg resin)14〇將半導體裝置等密 封。接著，如第5C圖中所顯示者，從導線架12〇剝㈣ 性片110而得到上面排列著眾多QFN 15〇的單元。 X有關黏性片11 〇所用的黏著劑，通常係使用環氧樹脂/ 丙烯腈-丁二烯共聚物（NBR)型黏著劑與矽酮型黏著劑，如 在日本未審查專利申請案，首次公開第H06-1 8 127號中所 示者。 _ ▲不過，於使用環氧樹脂/ NBR型黏著劑或矽酮型黏著 劑的傳統黏性片中，通常將黏著層製造成儘可能地薄，例 如5微米，以期抑制所謂“黏著劑殘逢（adheSlve residue)”， 亦即’ k導線㈣彳掉純#時在導線架的難财所 的黏著劑之發生。對於此種傳統黏性片會有下列諸項問題。 於使用具有黏著層的黏性片製造傳統㈣15〇之情況 中’該黏著劑無法進入導腳之間的間隙，使得黏著層的表 316466 6 200522252 面和導線架的底部皆處於相同的平面之上，如第5八圖中 所顯不者，且由於此結果，如第6圖中所顯示者，導線架 的底部（安裝於電路板等之中時的外部連接端子側）係 位於相對於模塑樹脂140的底部之相同平面之上。 此外，第6A圖為-顯示得自先前所述方法的第犯圖 =所示傳統QFN之圖式，且其中顯示出導腳已經以預定的 F曰j距排列之樣子。亦即杰炎 '成為外部連接端子的導腳之尖端200522252 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a semi-conductive 'chip' which can be used to manufacture a semiconductor device by using the adhesive sheet. Lead rod core: The sheet is attached in a peelable form to a > wood 4 circuit board (winng board). This application claims the priority of the Japanese Patent Application No. 2003-37, filed on February 7, and its contents are incorporated herein by reference. [Previous technology] Second: From:! Γ devices such as portable personal computers, mobile phone temples to be smaller, thinner, and made of multiple functions, so there are = degrees: two parts' and The electronic zeros that make up electronic devices: highly wooden: Under this situation, the surface-mounted G e-m_t) type semiconductor device is called "CSP", which is the chip size package (ah ~ heart) becomes the focus of attention. 'And replaced QFp (Wad Chest Package) and S0P (Small Out Package-Sunda. In CSP, and especially in QFN (Quad Flat Non-lead )), Because QFN (leadless square plate (such as ^ Fw Non-iead)) can be manufactured using the traditional semiconductor farming manufacturing technology, it is mainly suitable for those with 100 or fewer pins Low-number-of-terminal-type semiconductors are jealous. In the following, the traditional QFN manufacturing method will be explained with reference to Figures 5A to 5D. Figures 5A to 5D are shown in the QFN manufacturing process. Plan view, 316466 5 200522252, which is perpendicular to the mounting surface of the semiconductor device relative to the lead frame. First, as shown in FIG. 5A, first, a plurality of women's clothing parts (die-pad portion) 12 1 for semiconductor devices are prepared, and parts (die-chip portions ( A lead frame 12o with a plurality of guide pins 122 is mounted on the periphery of the die-pad portion. 121, and an adhesive sheet 110 is adhered to the surface of the lead frame 12o. The adhesive sheet 11 has an adhesive layer ι2 and is formed on The heat-resistant base material on the adhesive layer 11 2 is as follows. Next, as shown in FIG. 5B, the semiconductor device 13 is mounted on each semiconductor device mounting part 121 of the lead frame 120, and the semiconductor device is not _ The lead pins 122 of the lead frame 120 are respectively connected through the bonding wires 131, and the semiconductor device is sealed with a mold resin 140. Then, as shown in FIG. 5C, the lead frames 12 are peeled off. The adhesive sheet 110 is obtained by arranging a plurality of QFN 150 units. X The adhesive used for the adhesive sheet 11 〇 is usually an epoxy resin / acrylonitrile-butadiene copolymer (NBR) type adhesive and Silicone-based adhesives, as in Japanese unexamined patent application, first published as shown in H06-1 8 127. _ ▲ However, in conventional adhesive sheets using epoxy / NBR-type adhesives or silicone-type adhesives, usually The adhesive layer is made as thin as possible, for example 5 micrometers, in order to suppress the so-called "adheSlve residue", that is, the occurrence of the adhesive in the difficult financial institution of the lead frame when the 'k wire is cut off pure ## . There are the following problems with this conventional adhesive sheet. In the case of using the adhesive sheet with an adhesive layer to manufacture the traditional ㈣150, the adhesive cannot enter the gap between the guide pins, so that the surface of the adhesive layer 316466 6 200522252 and the bottom of the lead frame are on the same plane. As shown in Figures 5 and 8, and because of this result, as shown in Figure 6, the bottom of the lead frame (the external connection terminal side when mounted in a circuit board, etc.) is located relative to the mold Above the same plane of the bottom of the plastic resin 140. In addition, Fig. 6A is a diagram showing the first offense obtained from the previously described method = the conventional QFN diagram shown therein, and it shows that the guide pins have been arranged at a predetermined F: j pitch. That is, Jie Yan 'becomes the tip of the guide pin of the external connection terminal
;法攸傳統_中的模塑樹脂表面突出來。於此種QFN 衣於電路板上面的情況中’該焊接係於 1土树月日底部的平面上相對於配置有導腳的表面進行。此 =，嚴格說來，於切製QFN單元以分別形 側表面的導腳實施谭接。不過，主要係使用 /、板塑树月日底部位於相同平 子。因此，於後文中只有提及此等之者導腳作為外部連接端 在將丈干球1 6 0施加到第6 a闻山 如笛心 _ ]弟6A圖中所示的QFN 15〇時， 目中所不者’焊球160只會分別黏附在導腳122 底部，且焊球160會形成近似二維的面接合。 所以，相對於周圍安裝（以 半導俨| , ^ ference mounting)類型 广衣置，例如向上黏附成為三維的QFp， =二’傳統_具有相當低的安裝強度，使得焊劑； 口p連接端子的底部包覆於端子之側邊，且其安裝可 Λ (例如電路板的彎曲強度）亦相當的低。 义 表面如第6C圖中所顯示者，於要安裝的電路板Π0 乂 3有外來物質171(例如，黏附性物質，如灰塵以及 316466 7 200522252 :配：的部分等’在對應於機械損害時 中，若該外來物皙1 7 Ί 山— 又❿J之f月况 消（取決於其尺寸），則=又無法由焊球160的高度所抵 170,或者可& u * 160無法成功地連接電路板 易η/ 的電性連接或桿球16〇可能變得容 易仗電路板1 70剝離。 又行合 再者，在製造_時1㈣ 的樹脂模塑係在5至10处爾力且 +:= 熱下實施。 你上儿土 A〇〇C之加 所以’黏性片的黏著層合_霞於古、西 (在黏著層盥導Μ之f1 W ’使得黏著硬度 者，…上的黏著強度)會相對地減退，且再 …所5月枳塑溢料”(moldfaIsh)之現象，1中传 莫塑樹脂嶋，使黏著層從導線架剝離且使樹 能制成=:在¥腳底側或半導體裝置安裝部份，因而可 月匕衣戚不良產品。 [發明内容] 有鑑於上述情況’乃產生了本發明。亦即，本發明之 …目的為提供製造半導體裝置用之黏性片，其 半導體裝置之製造中不會有 ' 、 :留之風險，且其可增加對㈣等半導體裝置的電 安褒強度以及安農可靠性。 h路板之 f造甘本^明之另一目的為提供一種半導體裝置與其 、:：/、在QFN等的半導體裝置之製造中不會有模塑 =也不會有黏著劑殘渣殘留之風險，具 電路板之高安裝強度與高安裝可靠性。 寻的 316466 8 200522252 本發明之發明人經徹底研究以期解決上述諸項問題， 並發明下述製造半導體裝置用之黏性片，半導體裝置，以 及其製造方法。 本發明製造半導體裝置用之黏性片為以可剝離形式黏 附至導線架或電路板以用於製造半導體裝置之黏性片，1 包括在其一表面上的黏著層與耐熱性基底材料，其中該= 著層包含熱固性樹脂（a)與可剝離性賦予成分（b)。 較佳者，該上述黏性片進一步包含熱塑性樹脂（c)。有 關該可剝離性賦予成分（b)，較佳者為矽酮油。再者，嗜黏 著層較佳係包含與該熱固性樹脂⑷或同時與㈣固= 脂⑷及該熱塑性樹脂⑷兩者化學鍵結之該可剝離^ 另外，較佳者，上述黏著層於加熱固化之後，在b 至250。(：下的最低貯存模數為不低於丨他。較佳者，』; The surface of the molding resin in the French tradition is prominent. In the case where such a QFN is coated on a circuit board, the welding is performed on a plane at the bottom of the moon tree with respect to a surface on which a guide pin is disposed. This =, strictly speaking, the QFN unit is cut in order to form a guide pin on the side surface. However, the main use is /, and the bottom of the tree-plastic tree is located on the same level. Therefore, in the following, only the guide pins of these are mentioned as external connection ends. When applying the dry ball 1 60 to the 6th Wenshan Rudixin]] QFN 15 shown in the figure 6A, Whatever is missing in the head, the solder ball 160 will only adhere to the bottom of the guide leg 122, and the solder ball 160 will form an approximately two-dimensional surface joint. Therefore, compared to the surrounding mounting (with semi-conducting 俨 |, ^ ference mounting) type of wide clothing, such as sticking upward to become a three-dimensional QFp, = 2'traditional_ has a relatively low mounting strength, making the solder; the port p connected to the terminal The bottom is covered on the side of the terminal, and its installation can be relatively low (such as the bending strength of the circuit board). The surface is as shown in Figure 6C, and there are foreign substances 171 (for example, adhesive substances such as dust and 316466 7 200522252: parts: etc.) on the circuit board to be mounted. In this case, if the foreign object is fair 1 7 Ί mountain — again ❿ J f month condition (depending on its size), = = 170 can not be offset by the height of the solder ball 160, or can be & u * 160 cannot be successfully The electrical connection to the circuit board or the pole ball 160 may become easily peeled off by the circuit board 1 70. Furthermore, at the time of manufacture, the resin molding of 1㈣ is at 5 to 10 ergs and +: = Implementation under heat. The addition of your upper soil A〇〇C so the 'adhesive layer of the adhesive sheet_xiayugu, west (f1 W in the adhesive layer guide M') makes the adhesive hardness, ... (Adhesive strength) will decrease relatively, and then ... the phenomenon of moldfaIsh in May, 1 in the plastic mold resin, the adhesive layer peeled from the lead frame and the tree can be made =: ¥ The bottom of the foot or the mounting part of the semiconductor device can be a bad product. [Abstract] In view of the above situation ' The present invention has been produced. That is, the purpose of the present invention is to provide an adhesive sheet for manufacturing a semiconductor device. The strength of electrical safety and the reliability of agriculture. Another purpose of the road circuit board is to provide a semiconductor device and its :::, and there will be no molding in the manufacture of semiconductor devices such as QFN. There is no risk of adhesive residue, and it has high mounting strength and high mounting reliability of the circuit board. 316466 8 200522252 The inventor of the present invention has thoroughly studied to solve the above problems, and invented the following manufacturing semiconductor device Adhesive sheet used, semiconductor device, and manufacturing method thereof. The adhesive sheet used in the manufacture of semiconductor devices of the present invention is an adhesive sheet that is peelably attached to a lead frame or a circuit board for use in manufacturing a semiconductor device. An adhesive layer and a heat-resistant base material on one surface thereof, wherein the = adhesive layer includes a thermosetting resin (a) and a releasability-imparting component (b). Preferably, the aforementioned adhesiveness The sheet further contains a thermoplastic resin (c). The peelability-imparting component (b) is preferably a silicone oil. Furthermore, the adhesion-promoting layer preferably contains the thermosetting resin or both of the thermosetting resin and the resin.可 and the thermoplastic resin ⑷ the chemical bond between the peelable ^ In addition, it is preferable that the above adhesive layer is cured at a temperature of b to 250. (: The minimum storage modulus below is not less than 丨 he. The best,
基底材料為一耐熱性樹脂膜，其具有不低於A =_溫度以及5至5〇 ppmrc之熱膨脹係數；或 ’‘〜、5至50PPm/°C的熱膨脹係數之金屬箔。 〆 述黏=之=熱性基底材料表面上，於施加有上 之相對表面上形成保護膜。 必須提及者，於此句 则dulus)，，的測量、。曰中，“貯存模數（st〇rag( 勺測里缸件將在下面的“操作實施例，，中解釋。 附到導導體裝置用之黏性片為以可剝離形式黏 板以用於製造半導體裝置之黏性片，係 ，表面上的黏著層與耐熱性基底材料，並中，一 316466 9 200522252 邛伤黏者層係於黏附到導線架及/或電路板時進入形〜 導線架及/或電路板上面的間隙内。 、节、 較佳者’上述黏著層的厚度不小於6微米（叫，且較 =:係構成本發明製造半導體裝置用之黏性片，以使得 、:本电明黏性片黏附到導線架及/或電路板時，上述黏著層 、入该形成於導線架及/或電路板上面之 ^ 小於2微米。 曰h木度不 ^發日騎導料置包括具有半導體元件衫部份鱼外 邛連接端子之導線架或電路板，以及至少— /、 導體元件安袭部份上且用模塑樹脂料的+ “ 中忒外部連接端子係從模塑樹脂底部突出。· ’、 應提及者，於此說明書中，於安裝有半導 ^端附近部份稱為“尖師P end)”，1在從半導㈣置 樹月^方广向看之情況下’該安裝有半導體的表面稱為模塑 树月日的底部（bottom)，，。 ~供土 、，制=發明製造半導體裝置的方法包括下列諸步驟：將上 、衣&半導體裝置用之黏性 丰邕邮—壯— 々J刮離的方式黏附於具有 入持的導線架或電路板，使得—部份點著層進 壯^ 導線架或電路板上的間隙内；將半導體元件安 衣该半導體安裝部份以將該半導触— 線架或電路板的外部連接端子.使^件笔性連接到該導 架或電路板以及該半導 離掉該製造半導體裝置用之勒性路板剝 有優良之可將黏著層從導線年或=發明黏性片具 ^ A路板剝尚隹的性質，因此 316466 10 200522252 右使用此‘性片製造QFN等之半導體裝置，則沒有黏著劑 殘留下來的可能性。 再者，由於一部份黏著層可進入該形成於導線架或電 路板上的間隙内，因此若使用本發明製造半導體裝置用之 *占性片黏附到導線架或電路板之上以製造QFN等之半導 :衣置4，於使用模塑樹脂的密封程序中就沒有發生模塑 温料之可能性。 <再者，由於外部連接端子的尖端係從模塑樹脂底部突 =來因此在將所得半導體裝置安裝到電路板等 之上時， 、干劏可用二-維形式施加到外部連接端子，藉以增加安裝強 度’且亦增高安裝可靠性。 、&外，由於在電路板等與經安裝的半導體裝置之間的 曰隙可經由具有從模塑樹脂底部突出的尖端之外部連接端 2存在而相對於先前較為拓寬，因此其結果可以減低因 =面上’例如電路板上，存在外來物質所導致的不良電 性連接，並藉以改善安裝可靠性。 口二者，經由使用本發明製造半導體裝置用之黏性片， 風卜提::於衣造中沒有模塑溢料也沒有黏著劑殘渣殘留之 =對於電路板等有高安裝強度，且有優良安襄可靠性 QFN寻半導體裝置。 [貫施方式] 下面要詳細解說本發明。 製造半導體裝置用之黏性片，， 之勒性片）為以 本發明黏性片10 (製造半導體裝置用 316466 11 200522252 J剝離方式黏附在導線架及/或電路板之黏性片，且如第( 2顯示沿厚度方向之橫斷面，本發明黏性片⑺大致係由 点、、生基底材料U與形成於其表面上的黏著層12所構 成。於本發明中，該黏著層12的組成物為其特徵。 (耐熱性基底材料） 1 $耐熱性基底㈣丨卜龍者輕料熱性 月吴、金屬箔等。 於製造諸如QFN之半導體裝置中，係使本發明黏性片 1 〇 士在晶粒接著程序、打線（wlre_bonding)程序、以及使用模 塑樹脂的密封程序中暴露於150至250。〇的高溫。 於使用耐熱性樹脂膜作為耐熱性基底材料u的情況 中二若溫度增加至玻璃轉變溫度（Tg)以上時，該耐熱性樹 脂膜的線性膨脹係數會快速地增加，且由於與金屬導線架 等的熱膨脹差異變大’因此當冷卻到室溫時，在其上黏附 有黏性片的導線架會有發生彎曲之可能性。當其上黏附有 黏性片的導線架於使用模塑樹脂的密封程序中發生彎曲 時，導線架等無法具備金屬模具的定位針腳，使得可能發 生不良定位。所以，當使用耐熱性樹脂膜作為耐熱性基^ 材料11日夺’該耐熱性膜的玻璃轉變溫度較佳為不低於15〇 °c ’且更佳為不低於刚。c。再者，由於金屬導線架等的 熱膨脹差異宜微小’因此該耐熱性樹脂膜在150至2筑 中的熱膨脹係數較佳為5至50ppmrc，且更佳為1〇至3〇 ppm/°C 0 有關具有此等性質之此類耐熱性樹脂膜，可以列舉者 316466 12 200522252 為用亞胺、聚醯胺 '聚 醚醚酮、氧化釭S 來醚鲖、聚 類似者，1=场素、聚《亞胺等所製之膜。 使用的金屬“ 15。：;;=熱性基底材料11時，所 ppmrc，且更佳為1〇至2 C的熱膨脹係數較佳為5至5〇 以列舉者為用全：聲納、秦有關此種金屬箱，可 銘、镍、辞、二、tin鎮、鈦、鉻，、鐵、 為主成靖1的1全造，使用此等金屬作 等。 γ烕的σ &泊或電鍍領，以及由彼等所製成者 再者·’為了在製造QFN等半導體裝置中於純 =程防止黏著劑殘渣’則該在耐熱性基底材料U盘黏著層 U =的黏著強度Sa對該在模塑樹脂與導線架等黏著^ :的黏著強度S b的比率(黏著強度比) ： 較佳為不低於15。 一在Μ%小於1 ·5的情況下，於剝離過程中可能發生 2科11為耐熱性樹脂膜時，為了使黏著強度比Sa/Sh -;1.5 ’較佳係事先對於其上要形成黏著層的表 ㈣糖化處理，以提高在耐熱性樹脂膜與㈣層之間_ 者強度Sa，該等處理可為例如電暈處理、電裝處理、底漆 處理（pnmer processing)、與嘴砂處理。雖然金屬落經分= 為輾乾金屬邱oiling metallicf〇il)和電解金屬箱，但為，了、 使黏著強度比Sa/Sb不低於1-5，較佳係使用電解金屬箱並 於經粗梭化的表面上形成黏著層12。再者，於電解金屬箱 316466 13 200522252 中尤其較佳者為電解銅落。 “黏著層” 二:ΓΛ層12含有熱固性樹侧可剝離性賦予 =()作為必需成分，且較佳者進—步包含熱塑性樹脂 (C) ° =㈣脂⑷為給予黏著層W和良好黏著 / ’且错由在製造㈣等之中摻合此成分，可以 得到良好的打線性質盥槲 "树月曰防漏性質。有關該熱固性樹 月匕曰’ 了 乂列舉者為尿素樹脂、三聚氰胺樹脂、苯基脈胺樹 ^ ^ΓΤμΓ^1116 reSln)' f guanamme 環《心:曰::月曰、本-甲酸二烯丙酯樹脂、異氰酸酯樹脂、 ,亞月女树月曰、降冰片烯二醯亞胺樹脂 rrresin)等。此等熱固性樹脂可以—種單獨地使 用，也可以將其中二種或更多種—起使用。 尤其，較佳者為❹環氧樹脂及/或 此等樹脂的黏著層12可以在 口為3有 住高彈性比例，且在模 丁仏序的加工溫度下維持 料與導線架等之間的高黏著強度。 w住基底材 :剝陳賦予成分（b)為經摻合入以在製造_等之 1 =耗序巾增加刊離性絲止黏㈣殘渣之 刀。有關該可剝離性賦予成分， 網油與變性㈣油等。 彳列牛者為未變性發 有關未變性㈣油，可以列舉者為二曱基聚石夕氧烧類 316466 14 200522252 型、甲基氫聚矽氧烷類型、甲基苯基聚矽氧烷類型等。有 關變性矽酮油，可以使用對於熱固性樹脂（a)或者同時對於 熱固性樹脂（a)及熱塑性樹脂兩者都具有相對反應性之 任何反應性㈣油，與對於此等樹脂都沒有相對反應性的 非反應性矽酮油。 有關刖述反應性矽酮油，可以列舉者為胺基變性類 型、環氧基變性類型、缓基變性類型、甲醇變性類型、甲 基丙稀酸變性（methacryHcdenaturati〇n)類^、氯硫基變性 類型、盼變性類形辇，&认S 士 π i 、又旺頦生寺，而於另一方面，有關後述非反應性 石夕酮油，可以列舉者為㈣變性類型、甲基苯乙烯基變性 類型、絲變性類型、脂肪酸0旨變性類型、烧氧基變性類 型、氟變性類型等。 、 此等石夕酉同油可以一種單獨地使用，也可以將其中二種 或更多種一起使用。 尤/、對方；熱固性樹脂（a)或者同時對於熱固性樹脂（ 及熱塑性樹脂(c)兩者都具有相對反應性之變性矽酮油者 為較佳1為上述變性㈣油在用來形絲著層時，會牢 固地化學鍵結到該熱固性樹脂⑷或者熱固性樹脂⑷與献 塑性樹脂⑷兩者，使得凝聚性增加，且結果導致其黏著劑 ^會在剝離程序中—整片剝離，於是可高度抑制黏著二 殘潰。 若黏著層同時含有熱固性樹脂⑷和可剝離性賦予 成分（b)，則在_等的製造中’ _部分黏著層12可進入 形成於導線架或電路板上的毗鄰端子之間的間隙内，然而 316466 15 200522252 有關此之細節將於後文解說。 再者，、經由將熱塑性樹脂⑷調配到黏著層心，則可 賦予挽性，使一邱公對装β， 、 板的問隙肉，。* ¥ 12變得容易進入導線架或電路 …，、，且使作為純片的可操作性獲得進—步改呈。 有關熱塑性樹脂（C)，可 ° 聚物⑽R)、丙婦腈_ 丁二、列舉者為丙稀腈-丁二烯共 一 一 _苯乙烯樹脂（ABS)、苯乙烯_ J —烯-乙：％樹脂（SEBS)、芏 ^ (SBS)、取τ - π 本乙柯-丁二烯-苯乙烯樹脂 W:r二 丙烯腈、聚乙烯基丁路、聚酸胺、聚 ®皿月女亞胺、聚醯亞胺、 矽氧烷等。 ♦胺基甲酸酯、聚二甲基 等之中，特別是具有酿胺組合的聚醒胺售胺 具有優良的耐教性了 = 2樹脂等為較佳’因為此等都 用，也可以將；：塑性樹脂可以-種單獨地使 以將其中二種或更多種-起使用。 再者’熱塑性樹脂⑷的重量平均 2，_至1，0〇〇,〇〇〇，更佳去 ’仏者為 佳者為1〇，_至500，_/、，0至800,000,且特別較 、会工由將熱塑性樹脂（ 旦 範圍内，可以增加_ '二:刀子里限制在上述 剝離程序中的黏著劑殘渣，::二者進， 雖然各成分的量沒 脂（C)的情、、兄巾 ，1限制，不過於調配熱塑性樹 例 者為。·3 S 2·5，且特別較佳者為i至二·3。至3·5’退更佳 316466 16 200522252 方；成分（a)對（c)的質量比例，亦即（⑷/(c)) ，超過3.5 的丨月况中，姑著層12的撓性可能減低。於製造qFN等時 使用杈，樹脂的密封程序中，黏性片的黏著強度可能減 1氏使付^線架等與黏性片可能彼此部份剝離，而可能造 成模塑溢料。再去7古 ^ ^ ， 也有使一邛伤黏者層12可能無法進入 導線架等的間隙内之可能性。 “另一方面’於質量比例（(a)/(c))低於0.3的情況中，彈 性模數可能減低，因此可能造成不良的打線。 旦再者’不論熱塑性樹脂⑷存在或不存在，樹脂成分總 置（熱固性樹脂（a)和熱塑性樹脂⑷的總量）對可剝離性賦 予成分（b)之質量比例（(⑷+⑷)/(b))較佳為6至^咖更 佳為10至1，000。 ’ 於樹脂成分總量對可剝離性賦予成分⑻之f量比例 小於6之情況中’導線架等與黏性片之間的黏著強度可能 減低’且於使用模塑樹脂的密封程序中會有導線年^ 性片可能彼此部份剝離之可能性，因此可能造成模塑溢料'。 另方面，於樹月曰成分總量對可剝離性賦予成分（b) 之質量比例超過2,000之情況中，導線架等與黏性片1門 :::著強度可能增加’且於黏性片剝離程序中 ; 殘〉查可能殘留之可能性。The base material is a heat-resistant resin film having a thermal expansion coefficient of not less than A = _ temperature and 5 to 50 ppmrc; or a metal foil having a thermal expansion coefficient of 5 to 50 PPm / ° C.黏 As described above, a protective film is formed on the surface of the thermal base material on the opposite surface to which it is applied. Those who must be mentioned, in this sentence dulus), are measured. "The storage modulus (storage cylinder) will be explained in the following" operation example, ". The adhesive sheet attached to the conductor device is a peelable sheet for use in Manufacture of adhesive sheets for semiconductor devices. Adhesive layer on the surface and heat-resistant base material. 316466 9 200522252 The adhesive layer is damaged when it is adhered to the lead frame and / or circuit board. And / or within the gap above the circuit board. The knot, preferably, the thickness of the above-mentioned adhesive layer is not less than 6 microns (called, and more =: constitutes the adhesive sheet used in the manufacture of the semiconductor device of the present invention, so that: When the electric adhesive sheet is adhered to the lead frame and / or the circuit board, the above-mentioned adhesive layer, which is formed on the lead frame and / or the circuit board, is less than 2 micrometers. The device includes a lead frame or a circuit board with a semiconductor component shirt and a fish outer sleeve connection terminal, and at least-the + + middle sleeve external connection terminal on the conductor component mounting portion is molded from a resin. Resin bottom protrudes. · ', Who should be mentioned here In the book, the part near the semiconducting end is called "Spirit Master P end". 1 When looking at the tree from the semiconducting side, the surface on which the semiconductor is mounted is called Molding the bottom of the tree (bottom), ... ~ supplying soil, making = inventing a method for manufacturing a semiconductor device includes the following steps: coating, coating, and the adhesiveness of semiconductor devices-Zhuang-々 The method of J scraping off is adhered to the lead frame or circuit board with holding, so that-part of the point is layered into the gap ^ the lead frame or the gap on the circuit board; the semiconductor component is mounted on the semiconductor mounting part to Semiconducting contact — the external connection terminal of the wire frame or circuit board. It can be connected to the guide frame or circuit board by pen and the semiconductor can be peeled off from the insulative circuit board used for manufacturing the semiconductor device. The layer from the wire or the invention of the adhesive sheet has the characteristics of ^ A circuit board peeling, so 316466 10 200522252 right to use this semiconductor sheet to make semiconductor devices such as QFN, there is no possibility that the adhesive will remain. , Because a part of the adhesive layer can enter the lead frame Or gaps on the circuit board, so if the * occupant sheet used in the manufacture of the semiconductor device of the present invention is adhered to a lead frame or a circuit board to make a semiconductor such as QFN: garment set 4, used for sealing with molding resin There is no possibility of molding warming in the procedure. ≪ Furthermore, since the tip of the external connection terminal protrudes from the bottom of the molding resin, when the obtained semiconductor device is mounted on a circuit board or the like,劏 Can be applied to the external connection terminals in two-dimensional form, thereby increasing the mounting strength 'and also increasing the mounting reliability. In addition, since the gap between the circuit board and the like and the mounted semiconductor device can be achieved by having a slave mold The external connection end 2 of the tip protruding from the bottom of the plastic resin is wider than the previous one, so the result can reduce the bad electrical connection caused by foreign substances on the surface, such as a circuit board, and improve the installation reliability. Sex. Both of the two, through the use of the adhesive sheet for the manufacture of semiconductor devices in the present invention, Feng Buti :: No molding flash and no adhesive residue in the garment manufacturing = high mounting strength for circuit boards, etc. Excellent Anxiang reliability QFN search semiconductor device. [Performance] The present invention will be explained in detail below. The adhesive sheet used for manufacturing semiconductor devices is an adhesive sheet that is adhered to a lead frame and / or a circuit board in the peeling manner of the adhesive sheet 10 (316466 11 200522252 J for manufacturing semiconductor devices) of the present invention, and such as No. 2 shows a cross-section in the thickness direction. The adhesive sheet of the present invention is roughly composed of a dot, a green base material U, and an adhesive layer 12 formed on the surface. In the present invention, the adhesive layer 12 Its composition is characteristic. (Heat-resistant base material) 1 $ Heat-resistant base material 丨 Bronze light heat-resistant material, metal foil, etc. In manufacturing semiconductor devices such as QFN, the adhesive sheet 1 of the present invention is used. 〇Shi is exposed to a high temperature of 150 to 250 ° in a die bonding process, a bonding process, and a sealing process using a molding resin. In the case of using a heat-resistant resin film as the heat-resistant base material u When the temperature is increased above the glass transition temperature (Tg), the coefficient of linear expansion of the heat-resistant resin film will increase rapidly, and the difference in thermal expansion between the heat-resistant resin film and the metal lead frame will increase. Therefore, when cooling to room temperature, The lead frame to which the adhesive sheet is adhered may be bent. When the lead frame to which the adhesive sheet is adhered is bent during a sealing process using a molding resin, the lead frame and the like cannot be equipped with a metal mold. Positioning pins make poor positioning possible. Therefore, when a heat-resistant resin film is used as the heat-resistant base material, the glass transition temperature of the heat-resistant film is preferably not less than 15 ° C and more preferably Not less than rigid. C. Furthermore, since the difference in thermal expansion of the metal lead frame and the like should be small, the thermal expansion coefficient of the heat-resistant resin film in the range of 150 to 2 is preferably 5 to 50 ppmrc, and more preferably 10 to 30ppm / ° C 0 For such heat-resistant resin films having these properties, 316466 12 200522252 can be used as imine, polyamidamine 'polyether ether ketone, osmium oxide S to ether, poly analog 1 = film made of field element, polyimide, etc. The metal used is "15." ;; = ppmrc, and more preferably 10 to 2 C. The thermal expansion coefficient is preferably 5 to 50 are based on enumeration: sonar, Qin Belonging to the box, can be Ming, Nickel, Ci, II, Tin Town, Titanium, Chromium, Iron, etc. It is a complete construction of Jing1, and these metals are used. Γ 烕 σ & Poor or electroplated collar, And those made by them again, "In order to prevent the residue of the adhesive in the process of manufacturing semiconductor devices such as QFN, the adhesive strength Sa of the U-layer adhesive layer U of the heat-resistant base material should be used in the mold. The ratio of the adhesion strength S b (adhesive strength ratio) of plastic resin to lead frame and other adhesion ^: preferably not less than 15.-When M% is less than 1.5, 2 divisions may occur during the peeling process When 11 is a heat-resistant resin film, in order to make the adhesive strength ratio Sa / Sh-; 1.5 ', it is better to saccharify the surface of the heat-resistant resin film and the gadolinium layer in advance_ In terms of strength Sa, such treatments may be, for example, corona treatment, denso treatment, pnmer processing, and mouth sand processing. Although the metal warp points = oiling metallic foil and electrolytic metal box, in order to make the adhesion strength ratio Sa / Sb not lower than 1-5, it is better to use an electrolytic metal box An adhesion layer 12 is formed on the roughened surface. Furthermore, among the electrolytic metal boxes 316466 13 200522252, electrolytic copper is particularly preferred. "Adhesive layer" 2: ΓΛ layer 12 contains thermosetting tree-side peelability imparting = () as an essential component, and the better one-further contains a thermoplastic resin (C) ° = ㈣ grease⑷ to give the adhesive layer W and good adhesion / 'And wrong reason by mixing this ingredient in the production of maggots, etc., you can get good thread properties, toilet mist " Shuyue said leak-proof properties. Regarding the thermosetting tree, the listed ones are urea resin, melamine resin, and phenylmethylamine tree ^ ΓΤμΓ ^ 1116 reSln) 'f guanamme ring "Heart: Yue :: Yue Yue, Ben-Di diallyl formate Ester resins, isocyanate resins, Nyuki, Yuryuki, norbornene difluorene imine resin (rrresin) and so on. These thermosetting resins may be used singly or in combination of two or more of them. In particular, it is preferable that the adhesive layer 12 made of epoxy resin and / or these resins has a high elastic ratio at the mouth of 3, and maintains the temperature between the material and the lead frame at the processing temperature of the molding process. High adhesive strength.住 Base material: The peeling-providing component (b) is a knife that is blended to increase the release of silk and sticky residue in the manufacturing process. Examples of the releasability-imparting component include reticulate oil and denatured emu oil. Those in the queue are undenatured emu oils related to undenatured hair, and examples include dioxin-type polyoxysilane sintering type 316466 14 200522252 type, methylhydrogen polysiloxane type, methylphenyl polysiloxane type Wait. As for the modified silicone oil, any reactive emu oil which is relatively reactive to both the thermosetting resin (a) or both the thermosetting resin (a) and the thermoplastic resin can be used, and is not relatively reactive to these resins. Non-reactive silicone oil. Examples of the reactive silicone oil include amine-denatured, epoxy-denatured, retarded-denatured, methanol-denatured, methylacrylic-denatured (methacryHcdenaturati), chlorothio Types of denaturing and degenerating type, & S S π i, and Wang Shengsheng Temple, and on the other hand, for the non-reactive stone ketone oil described below, examples include degeneration type, methylbenzene Vinyl denaturation type, silk denaturation type, fatty acid 0 purpose denaturation type, oxyhydrogen denaturation type, fluorine denaturation type, etc. These oils can be used alone or in combination of two or more of them. Especially, the other party; a thermosetting resin (a) or a denatured silicone oil that is relatively reactive to both the thermosetting resin (and the thermoplastic resin (c)) is preferred. 1 The above-mentioned modified emu oil is used for threading. When it is layered, it will be strongly chemically bonded to the thermosetting resin⑷, or both the thermosetting resin 塑性 and the plastic resin⑷, which will increase the cohesiveness, and as a result, its adhesive ^ will be in the peeling process-the whole piece is peeled, so it can be highly If the adhesive layer contains both thermosetting resin ⑷ and releasability-imparting component (b), in the manufacture of _, etc., _ part of the adhesive layer 12 can enter adjacent terminals formed on the lead frame or circuit board. Within the gap between them, however, 316466 15 200522252 details about this will be explained later. In addition, by blending the thermoplastic resin to the center of the adhesive layer, it can give the resilience, so that Qiu Gong pairs with β, The interstitial meat of the board. * ¥ 12 makes it easy to enter the lead frame or circuit ..., and improves the operability as a pure sheet-step by step. Regarding the thermoplastic resin (C), the polymer R), Acrylonitrile butadiene, the ones listed are acrylonitrile-butadiene-one styrene resin (ABS), styrene_J-ene-ethyl:% resin (SEBS),) ^ (SBS ), Take τ-π benzyl-butadiene-styrene resin W: r diacrylonitrile, polyvinyl butyral, polyamic acid, polyethylenimine, polyimide, silicone Wait. ♦ Among the urethanes, polydimethyls, etc., especially the polyamines with amine-synthetic amines have excellent education resistance = 2 resins and so on are preferred 'because they are used for both, and can also be used. The :: plastic resin may be used singly to use two or more of them. In addition, the weight of the thermoplastic resin is an average of 2, _ to 1,000,000, more preferably, the one which is more preferable is 10, _ to 500, _ / ,, 0 to 800,000, and particularly The reason is that the thermoplastic resin (in the range of denier can be increased _ 'two: the adhesive residue in the knife limited to the above-mentioned peeling procedure :: both into, although the amount of each component is not fat (C) ,, brother, 1 limit, but those who are not in the formulation of thermoplastic trees are: · 3 S 2 · 5, and particularly preferred is i to 2. · 3. to 3 · 5 'withdrawal is better 316466 16 200522252 side; ingredients (A) mass ratio of (c), that is, (⑷ / (c)), in the case of more than 3.5 months, the flexibility of the anchor layer 12 may be reduced. Use of branches and resin sealing when manufacturing qFN, etc. In the procedure, the adhesive strength of the adhesive sheet may be reduced by 1 degree, so that the wire frame and the adhesive sheet may be partially peeled from each other, which may cause molding flashover. If you go to 7 ^ ^, there is also a sticky wound. There may be a possibility that the layer 12 cannot enter the gap of the lead frame, etc. "On the other hand, when the mass ratio ((a) / (c)) is lower than 0.3, the elastic modulus may be Low, it may cause poor wire bonding. Once again, regardless of the presence or absence of the thermoplastic resin ⑷, the total amount of the resin components (the total amount of the thermosetting resin (a) and the thermoplastic resin ⑷) contributes to the releasability of the component (b). The mass ratio ((⑷ + ⑷) / (b)) is preferably from 6 to ^ coffee, more preferably from 10 to 1,000. 'In the case where the ratio of the amount of f of the total resin component to the releasability imparting component ⑻ is less than 6 "The adhesive strength between the lead frame and the like and the adhesive sheet may be reduced" and there is a possibility that the lead sheet may be partially peeled from each other during the sealing process using a molding resin, so it may cause molding flashover On the other hand, in the case where the mass ratio of the total component to the releasability-imparting component (b) exceeds 2,000, the lead frame, etc., and the adhesive sheet 1 door ::: the strength may increase. Sex stripping procedure; Residuals> Check for possible residues.
、尤其，在打線程序之前實施導線架的電漿清潔以、、主來 導線架的表面之情況中，此現象則相當顯著。 ’月WIn particular, in the case where the plasma cleaning of the lead frame is performed before the wire bonding procedure, the surface of the lead frame is mainly caused by this phenomenon. ’Month W
於黏著層i2之中，除了上述成分⑷至⑷之外 添加其他成分。 ^ J 316466 17 200522252 ^ ’為了調整熱膨脹係數、熱傳導係數、表面黏著 性Ά著性貝等，較佳者為添加無機或有機填充料。 此處，有關無機填充料，可以列舉者為研模型氧化矽、 溶化型氧化矽、氧化紹、氧化鈦、氧化鈹、氧化鎂、碳酸 ^、虱化鈦、氮化石夕、氮化调、魏鈦1化鎢、碳化石夕、 碳化鈦、碳化錯、碳化钥、雲母、氧化鋅、碳黑、氣氧化 紹、氫氧化約、氫氧化鎮、三氧化銻等，或其中在其表面. ^入有二甲基秒烧氧基等之物質。 〃有關有機填充料’可以列舉者為由聚酿亞胺、聚酿胺籲 醯亞胺、聚醚醚酮、聚醚醯亞胺、聚酯醯亞胺、尼龍、聚 矽氧等所製成的填充料。於本發明黏性片1〇之中，^黏= 層12經熱固化之後，於150至25(rc下的最低貯存模數= 佳為不低於1 MPa、更佳為不低於10 MPa、且特別佳為不 低於50 MPa。 於本發明黏性片10之中，在黏著層12經熱固化之後， 於150至25CTC下的最低貯存模數較佳為不低於i Mpa、 更佳為不低於1〇 MPa、且特別佳為不低於5〇 Mpa。 _ 應提及者，“熱固化之後（after heat curing)”係相當於 晶粒接著程序的熱處理之後，且上述溫度範圍係相當=打 線程序的熱處理溫度。 於製造QFN等之中的打線程序中，係在15〇至25〇。〇 加熱下施加60至12〇 kHz超音波以將銲線的兩端焊接，使 得半導體裝置與導線架等透過銲線彼此電性連接。 於此時，由於位於導線架等正下方之黏性片1 〇的黏著 316466 200522252 層12係暴露於上述溫度下，因此其彈性會減低，且易於吸 收超音波，結果導致為該導線架等可能會振動，且可能發 生不良的打線。 ^不過，若在打線程序的溫度（亦即，在150至250°C的 辄圍内）下之最低貯存難*低於1 MPa，則姉著層12 可以在打線程序中維持住其高彈性，且導致難以吸收超音 波並可以避免不良的打線。 士必須提及者，貯存模數可經由熱固性樹脂0)對熱塑性 樹脂（C)的質量比例等予以控制。例如，為了使在150至250 °c下的最低貯存模數不低於1MPa’則可以經由，例如， 使熱固性樹脂⑷對熱塑性樹脂⑷的質量比例不低於〇. 3而 達到，不過其係取決於樹脂之類型。 、i雖然本發明黏性片10的製造方法沒有特別的限制，不 過較佳者為澆鑄法（castlng meth〇d)和積層法此ng method)。於澆鑄法中，係製備含有熱固性樹脂⑷、可剝 離性賦予成分⑻、熱塑性樹脂⑷和有需要的其他成分之黏 著劑組成物，然後將該黏著劑組成物直接塗佈到耐熱性基 底材料11之上，且予以乾燥以形成黏著層12。 ^於積層法令，係將上述黏著劑組成物一次塗佈到可脫 離性膜上，且將其乾燥以形成黏著層12，並於其後再將該 黏著層轉移到耐熱性基底材料i丨之上。 必須提及者，從可塗性②以加讣出以丨等的觀點來看， 較佳者係經由將該熱固性樹脂（a)、可剝離性賦予成分 與有需要時的熱塑性樹脂（c)分別溶解在有機溶劑内超過1 316466 19 200522252 重量％、較佳為超過5重量％。 有關所使用之有機溶劑，可 苯；酮類例如丙酮、 · +者為甲苯和二甲 型例如二，基甲醒胺、：：奶二’基異丁基酮；非質子 酉同；與四氫咲喃等。此等^乙和N-m各院 也可以將其中二種或更多: = 種單獨地使用’ 於本發明黏性片1〇中， 脫離的保護膜（沒有顯示出），藉以在^者止層^上面形成: 刻將該保護性膜脫離掉 ^衣^導，裝置之前 製造好之後與在使用之前，避免 要做為該保護膜之膜具有可絲p 告。只 二可列舉者為諸如下列之膜:聚㈣乙浠、 :氧杓；：對本：甲酸乙二醇醋’該膜之表面係經使用聚 夕乳樹如或鼠化合物處理過以成為可脫離者。 ^由於該黏著層12含有可剝離性賦予成分⑻，因此本 电明黏性片10具有優良的黏著層12可剝離性。所以，即In the adhesive layer i2, other components are added in addition to the above components ⑷ to ⑷. ^ J 316466 17 200522252 ^ 'In order to adjust the coefficient of thermal expansion, thermal conductivity, surface adhesion and adhesion, etc., it is preferable to add an inorganic or organic filler. Here, the inorganic filler can be exemplified by research model silicon oxide, molten silicon oxide, sintered oxide, titanium oxide, beryllium oxide, magnesium oxide, carbonic acid ^, titanium oxide, nitride nitride, nitriding, Wei Titanium 1 tungsten carbide, carbide carbide, titanium carbide, carbonized carbon, carbonized key, mica, zinc oxide, carbon black, gas oxide, hydroxide, hydroxide hydroxide, antimony trioxide, etc., or among its surfaces. ^ A substance such as dimethyl sulfanyloxy is introduced. 〃Related organic fillers' may be made of polyimide, polyimide, imide, polyetheretherketone, polyetherimide, polyesterimide, nylon, polysiloxane, etc. Filler. In the adhesive sheet 10 of the present invention, after the tack = layer 12 is thermally cured, the minimum storage modulus at 150 to 25 (rc = preferably not less than 1 MPa, more preferably not less than 10 MPa And particularly preferably not less than 50 MPa. In the adhesive sheet 10 of the present invention, after the adhesive layer 12 is thermally cured, the minimum storage modulus at 150 to 25 CTC is preferably not less than i Mpa, more It is preferably not less than 10 MPa, and particularly preferably not less than 50 MPa. _ It should be mentioned that "after heat curing" is equivalent to the heat treatment of the grain after the procedure, and the above temperature The range is equivalent to the heat treatment temperature of the wire bonding process. In the wire bonding process in manufacturing QFN, etc., 60 to 120 kHz ultrasonic waves are applied under heating to heat both ends of the wire so that The semiconductor device and the lead frame are electrically connected to each other through a bonding wire. At this time, because the adhesion of the adhesive sheet 10 located directly below the lead frame and the like 316466 200522252 layer 12 is exposed to the above temperature, its elasticity will be reduced, And it is easy to absorb ultrasonic waves, which may cause the lead frame and the like to vibrate, And poor wire bonding may occur. ^ However, if the minimum storage difficulty at the temperature of the wire bonding process (that is, within the range of 150 to 250 ° C) * is less than 1 MPa, then the layer 12 can be used for wire bonding. The procedure maintains its high elasticity, which makes it difficult to absorb ultrasonic waves and avoids poor wire bonding. It must be mentioned that the storage modulus can be controlled by the thermosetting resin (0) on the mass ratio of the thermoplastic resin (C). For example, in order to make the minimum storage modulus at 150 to 250 ° C not less than 1 MPa ', it can be achieved by, for example, making the mass ratio of thermosetting resin ⑷ to thermoplastic resin 不 not less than 0.3, but it is Depends on the type of resin. Although the manufacturing method of the adhesive sheet 10 of the present invention is not particularly limited, the preferred method is the castlng method and the lamination method (the ng method). In the casting method, an adhesive composition containing a thermosetting resin ⑷, a releasability imparting component ⑻, a thermoplastic resin ⑷, and other components as needed is prepared, and the adhesive composition is directly applied to a heat-resistant base material 11 And dried to form the adhesive layer 12. ^ In the build-up law, the above adhesive composition is applied to the detachable film at one time, and dried to form an adhesive layer 12, and the adhesive layer is then transferred to a heat-resistant base material i. on. It must be mentioned that, from the viewpoints of coatability ② in order to add out, etc., it is preferable to use the thermosetting resin (a), the releasability-imparting component, and the thermoplastic resin (c) when necessary. Each of them is dissolved in an organic solvent in an amount of more than 1 316466 19 200522252 wt%, preferably more than 5 wt%. The organic solvent used may be benzene; ketones such as acetone, and toluene are dimethyl and dimethyl form such as dimethylformamide :: milk bis'yl isobutyl ketone; the same as aprotic; and four Hydrogenation and so on. These ^ B and Nm hospitals can also use two or more of them: = kinds of singly used in the adhesive sheet 10 of the present invention, a protective film (not shown), so as to prevent ^ Top formation: Remove the protective film from the clothes immediately. After the device is manufactured before and before use, avoid making the film of the protective film silky. The only two examples are films such as the following: Poly (ethyl acetate),: Oxanthine ;: To this: ethylene glycol formate vinegar 'The surface of this film is treated by using polygalactin or rat compound to become detachable By. ^ Since the adhesive layer 12 contains a releasability imparting component ⑻, the present adhesive sheet 10 has excellent peelability of the adhesive layer 12. So, that is
㈣該黏著層12的厚度增加到大於先前者，於製造QFN 寻半導體裝置之中’在從導線架等剝掉黏性片10的黏性片 剝離過程中’仍可以將黏性片10順利地剝離掉且沒有殘留 黏著劑殘渣之可能性。 如此，由於即使黏著層12較厚於先前者也不怕會殘留 黏著劑殘渣，因此黏著層12可以比先前者較為厚因此， 當本發明黏性片1 〇黏附於導線架等時，一部份該黏著屛 12可進入該形成於導線架等上面之毗鄰端子之間的間隙 316466 20 200522252 著層12的厚度沒有特別限制，不過其較佳為不 小方；6破米，且特別較佳為不小於8微米。 經由將該黏著層12的厚度限定為不小“微米，則一 部伤該黏著層12綸|可、仓λ Z, 、 ， 進入到形成於導線架等之上的 Π 夠的深度’具體而言達到不小於2微求之深 ΐ出ΓΓ提供其外部連接端子的尖端從模塑樹脂底部 犬出不小於2微米之半導體裝置。 線加!ΓΛ於可錢—部份祕著層12進人卿成於導 上的間隙内，因此在黏性片ig與導線架等 黏者強度可以獲得顯著改善。 溢料使用模塑樹脂的密封程序中也沒有發生模塑 亦即，本發明黏性片㈣以同時 可剝離性，此兩性質係彼此相矛盾者。 度“ 由於本發明黏性片10之黏著層12含有熱固性樹脂 本發明=於打線私序中’該黏著層12可維持高彈性使得 “半^ 片1(3不具有會造成不良打線之可能性。 半V肖豆I置與其製造方法，， 制：：根據弗2圖和第3圖解釋使用本發明黏性片 衣造+導體裝置的方法之-個具體實例。 導-穿：文t仏以同時製造二個或更多個QFN⑻作為半 從：：二況為例子進行解說。必須提及者，第2圖為 二^ 件之側看時的導線架平面圖’而第3A至 圖為製造中㈣的A至A，斷面圖。 316466 21 200522252 f先，製備具有如第2圖中所示構造的導線架2〇。 :導、，泉木―2〇 &配著眾多半導體元件安裝部份（晶粒座部 伤）21 ’ 4等半導體元件安裝部份具有島狀形狀，於盆 =半導體元件，例如1C晶片；且沿著各個半導體元： 女衣部份21的周緣裝配著許多導腳22。 八人如第J A圖中所顯示，本發明黏性月丨〇係以增加 The thickness of the adhesive layer 12 is increased to be larger than that of the former. In the manufacture of a QFN semiconductor device, 'the adhesive sheet 10 can be smoothly removed during the process of peeling off the adhesive sheet 10 from a lead frame or the like.' Peel off without the possibility of adhesive residue. Thus, even if the adhesive layer 12 is thicker than the former, there is no fear that adhesive residue will remain, so the adhesive layer 12 may be thicker than the former. Therefore, when the adhesive sheet 10 of the present invention is adhered to a lead frame, etc., a part The adhesive tack 12 can enter the gap between adjacent terminals formed on the lead frame and the like. 316466 20 200522252 The thickness of the coating 12 is not particularly limited, but it is preferably not small; 6-meters, and particularly preferably No less than 8 microns. By limiting the thickness of the adhesive layer 12 to be not less than "micron, a portion of the adhesive layer 12 can be damaged, but can be entered into a sufficient depth of the lead frame etc." The depth is not less than 2 micron. ΓΓ provides the semiconductor device with the tip of its external connection terminal not less than 2 micron from the bottom of the molded resin. Wire plus! ΓΛ 于 可 钱 —Some 12 layers of secretion It is formed in the gap on the guide, so that the strength of the adhesive sheet such as the adhesive sheet ig and the lead frame can be significantly improved. The molding process of the flash resin using the molding resin did not occur, that is, the adhesive sheet of the present invention同时 For simultaneous peelability, these two properties are contradictory to each other. Degree "Because the adhesive layer 12 of the adhesive sheet 10 of the present invention contains a thermosetting resin, the present invention = in the private sequence of the wire, 'the adhesive layer 12 can maintain high elasticity so that "Half ^ piece 1 (3 does not have the possibility of causing poor wiring. Half V Xiaodou I and its manufacturing method, manufacturing :: explained using the adhesive sheet clothing + conductor of the present invention according to the Fu 2 figure and Figure 3 A specific example of the method of the device. Take two or more QFNs to be manufactured at the same time as a semi-following :: 2 case as an example. It must be mentioned that Figure 2 is a plan view of the lead frame when viewed from the side of two pieces, and Figures 3A to 3 are manufacturing Sections A to A of Zhongli, Sectional Views. 316466 21 200522252 f First, a lead frame 20 with a structure as shown in Figure 2 is prepared. Part (die seat wound) 21 '4 and other semiconductor component mounting parts have an island shape, and the basin = semiconductor element, such as a 1C chip; and along each semiconductor element: a lot of women's clothing parts 21 are equipped with a periphery Guide foot 22. As shown in the JA figure, the sticky month of the present invention is based on
剝離方式黏附在導線架2G的_表面上，使得該黏著層U 1 丁在昏表木20側（黏性片黏附步驟）。有關將黏性片1 〇 Z寸'1 =、’泉木20之方法，適當者為熱積層法、熱壓合法等。 如第3A和3B圖中所顯示，於本發明之此步驟中，可 以使一部份黏著層12進人該形成於導線架20上的間隙（亦 P在相4兩‘腳22之間的間隙，以及在半導體元件安裝 (M刀21 ‘腳22之間的間隙）之内達不小於2微米之 度。 曰八' 如第3B圖中所顯示，半導體元件30，例如Ic 上係使用日日粒接著劑（沒有顯示出）從沒有黏附黏性片 ‘的該侧安裝於導線架則半導體元件安裝部份21。 晶粒接著程序，，（die-attach process) —於有需要時，係在要安裝半導體元件3〇的導線架2q 實施電漿清潔。 、包水’肖’累釭在打線程序之前實施，以防止放氣（outgas) 成::和在‘線架2〇的表面上。亦即，放氣成分係在安裝 半‘ 之後且在打線程序之前，於導線架的受熱過程從黏 眭片10和曰a粒接著劑等產生的。若放氣成分沉積在導線架 316466 200522252 2〇的表面上，則可能在打線程序中發生不良的電性連接， 使得產率降低。 其次，如第3C圖中所顯示，半導體元件3〇和導線架 20的導腳22係透過由金線製成的銲線3 1而彼此電性連接 (打線程序）。再者，如第3D圖中所顯示，導線架2〇與半 ‘脰元件3 0係使用模塑樹脂4 0於第3 C圖中所示的製造 中將QFN鋪設在樹脂模塑模（resin m〇lding die)内，並且使 用該模塑樹脂（模塑材料）進行轉移鑄模㈨㈣如 molding)(晶粒模塑（die m〇Ming))而密封住。（樹脂模塑程 序） 接著，如第3E圖中所顯示，將黏性片1〇從模塑樹脂 40和導線架20剝離（黏性片剝離程序）而得到排列有眾多 QFNs 50 的 QFN 單元。 取後，如第3F圖中所顯示，沿著QFNs 5〇的各周緣 切割Q™單元以製得眾多QFNs 50。由於該QFNs 5〇係使 用上述本發明黏性片丨〇根據上述製造方法製成，因此沒有 髮生不良打、、表、模塑溢料（m〇ld nash)與黏著劑殘渣之可能 性。 一 再者於‘〖生片黏附步驟中，由於可使一部份黏著層 12進入^導線架20的間隙之中，如第3F圖中所顯示者， 故可以得到作為外部連接端子的導腳22之尖端從模塑樹 脂4〇底部突出不小於2微米之QFN 50。第4A圖顯示出 QFN 50之B-B橫斷面（第2圖中所示之B-B，線）。 此圖式顯示出該導腳係以預定的間距排列。 316466 200522252 若將谭球60接著到第从圖中所 ^ 4B圖t所示者時，則該谭球6〇 ，如弟 導腳22可為該力曰抹n # . 用一、准方式黏附，使得 A T ' 沿著從作為外部連接端子的導腳 之底部起到側邊所包裹。 逆按而子的寺腳22 士此來，相對於傳統QFN，竽焊戏γ ^ 地黏附到作為外邱、鱼拉 。亥钚球6〇可以更牢固 〜 連接端子的導腳22,且在安穿到雷路揣 寺之後的安裝強度可顯著地改善。 路板 例如電路板的彎曲強 、、，，口不μ女衣可罪牷， 汉]弓曲強度，可以獲得顯著地改善。 门此外’由於—部份導聊22從模塑樹月旨4〇 因此在導線架20(模夠心4Λ… 底#大出’ 間相對於傳統者可爭土二 ㈣電路板70之間的空 者，即:= 寬。如此一來，如第4C圖中所示 ::二電路板7〇中含有外來物質糊如，黏附性物質， 例如灰塵，與對應機械損室 貝 為夕卜來物f 的部分等）’也會因 声所2 導腳22的突出部份和焊球60的高 肖’而使得焊球60可以與電路板7〇有良好的接觸。 接盘=—來，由於外來物質71存在所導致的不良電性連 ΙΉ60從電㈣_之現象都可以顯著地抑制住。 雕壯’根據本發明’可以提供用以製造半導 黏!片’其在製造_之中，沒有不良的打 &核塑版料、不必害怕有殘留黏著劑殘渣之風險、 4增加對QFN的電路板之安裝強度與安裝可靠性。 ^者可以提供QFN和其製造方法，其具有對電路板 寺的尚安裝強度，與優良的安裝可靠性。 必須提及者，雖然上面的具體實施例係以對使用導線 316466 24 200522252 架的QFN的製造之應用例子來解說，不過本發明可以應用 於具有任何構造的任何半導體裝置，只要其具有經安裝到 其在導線架或電路板上所形成的半導體元件安裝部份上， 且係用模塑樹脂將其密封之半導體元件即可。 其次，雖然本發明係藉著操作實施例和比較實施例予 以進一步解說，不過此等實施例全然不限制到本發明。 “操作實施例1-5，， 將表1中所顯示的諸成分以表！中所顯示的質量比例 在四氫呋喃溶劑之下混合以製備黏著劑組成物。必須提及 者於S 1中，也顯不出樹脂成分總量（熱固性樹脂⑷和 熱塑性樹脂⑷的總量）對可剝離性賦予成分（b)之質量比例 ((()(c))/(b))以及熱固性樹脂⑷/熱塑性 例（⑷/⑷X於比較實施财也—樣）。 （）之貝里比 “其次，在塗布該黏著劑組成物後，使用聚酿亞胺樹脂 朕（商品名稱：KAPT〇N 100EN，為 Du Pont_T〇ray c〇，Ltd 所製造’厚度25微米’其玻璃轉變溫度不低於3⑻。c，敎 膨脹係數為16 ppm/t)作為耐熱性基底材料，使得其上乾 ^後的厚度可達1〇微米，將所得膜置於1坑下乾燥$分 鐘而得到本發明黏性片。 “比較實施例1，， f表1中所顯不的諸成分以表1中所顯示的質量比例 四氫呋喃溶劑之下混合以製備黏著劑組成物。然後，婉 由與操作實施例相同的炉皮 、工 、私序形成供比較所用的黏性豆 中不同之處在於，於祇士私#„ ^ 、形成黏考層之中，將該黏著劑組成物 316466 200522252 塗布於該膜之上，使得乾燥後的厚度成為5微米。 “比較實施例2” 將表1中所顯示的諸成分以表1中所顯示的質量比例 在曱苯溶劑中混合以製備黏著劑組成物。 然後，將該黏著劑組成物塗布於與操作實施例中相同 的耐熱性基底材料之上，使得乾燥後的厚度成為5微米， 之後，將所得片體置於160°C下乾燥5分鐘而得到供比較 所用的黏性片。 “比較實施例3” 以與比較實施例1相同的程序製備得到一黏性片，不 同處在於將表1中所顯示的諸成分以表1中所顯示的質量 比例在四氫呋喃溶劑之下混合以製備黏著劑組成物。 必須提及者，表1中的諸符號係表示下列成分。 (A1):環氧樹脂（商品名稱“AT-501”為 DAICEL CHEMICAL INDUSTRIES C〇·，LTD·，所製造，重量平均分 子量 120,000)， (A2):環氧樹脂（商品名稱“EPKQTE 828”為 JAPAN EPOXY RESINS C〇·，LTD·，所製造）， (A3):環氧樹脂（商品名稱“EPKOTE 604”為 JAPAN EPOXY RESINS CO·，LTD·，所製造）， (A4):環氧樹脂（商品名稱“HP-7200”為DAINIPPON INK AND CHEMICALS，INC·所製造）， (A5):酚樹脂（商品名稱“TPM”為NIPPON KAYAKU CO·，LTD·所製造）， 26 316466 200522252It is adhered on the surface of the lead frame 2G in a peeling manner, so that the adhesive layer U 1 is on the side of the wooden surface 20 (adhesive sheet adhesion step). Regarding the method of bonding the adhesive sheet to 1 inch, 1 inch, and 20 springs, suitable methods include a thermal lamination method and a hot pressing method. As shown in Figs. 3A and 3B, in this step of the present invention, a part of the adhesive layer 12 can be inserted into the gap formed on the lead frame 20 (also P is between the phase 4 and the two feet 22). The gap and the semiconductor element installation (the gap between the M-knife 21 'and the foot 22) is not less than 2 micrometers. As shown in FIG. 3B, the semiconductor element 30, such as Ic, is used on the day. The solar cell adhesive (not shown) is mounted on the lead frame from the side where no adhesive sheet is attached, and the semiconductor element mounting portion 21. The die-attach process — when necessary, the system Plasma cleaning is performed on the lead frame 2q where the semiconductor component 30 is to be installed. The water-filled 'Xiao' accumulate is implemented before the wire bonding procedure to prevent outgassing: and on the surface of the 'wire frame 2o' That is, the outgassing component is generated from the sticky sheet 10 and a glue adhesive after the heating process of the lead frame after the installation half and before the wiring process. If the outgassing component is deposited on the lead frame 316466 200522252 On the surface of 20, it may occur in the wire bonding process. The electrical connection reduces the yield. Second, as shown in FIG. 3C, the semiconductor element 30 and the lead 22 of the lead frame 20 are electrically connected to each other through a bonding wire 31 made of gold wire (bonding wire). (Procedure). Furthermore, as shown in FIG. 3D, the lead frame 20 and the half-prong element 30 are molded resin 40, and QFN is laid on the resin mold in the manufacturing shown in FIG. 3C. A resin mold is used, and the molding resin (molding material) is used to perform transfer molding such as molding (die molding) and sealed. (Resin Molding Procedure) Next, as shown in FIG. 3E, the adhesive sheet 10 is peeled from the molding resin 40 and the lead frame 20 (adhesive sheet peeling procedure) to obtain a QFN unit in which a plurality of QFNs 50 are arranged. After removal, as shown in Figure 3F, Q ™ cells were cut along the periphery of QFNs 50 to produce numerous QFNs 50. Since the QFNs 50 are made by using the above-mentioned adhesive sheet of the present invention according to the above-mentioned manufacturing method, there is no possibility of occurrence of defects, molds, mold flashes, and adhesive residues. Repeatedly in the "green sheet adhesion step, since a part of the adhesive layer 12 can be entered into the gap of the lead frame 20, as shown in Fig. 3F, a guide pin 22 can be obtained as an external connection terminal. The tip protrudes from the bottom of the molding resin 40 to a QFN 50 of not less than 2 microns. Figure 4A shows a B-B cross section of the QFN 50 (B-B, line shown in Figure 2). The figure shows that the guide pins are arranged at a predetermined pitch. 316466 200522252 If Tan Qiu 60 is next to the one shown in Figure 4B, then the Tan Qiu 60, such as the younger guide foot 22, can be used for the force. ## Use a quasi-type adhesion , So that AT 'is wrapped along the side from the bottom of the guide pin as an external connection terminal. Here comes the temple foot 22 soldiers who are standing against each other. Compared to the traditional QFN, the 竽 welding scene γ ^ is attached to the outer Qiu and Yula. The Haiqi ball 60 can be more secure ~ The guide pin 22 of the connection terminal, and the installation strength after being worn to Lei Luan Temple can be significantly improved. The bending strength of circuit boards such as circuit boards can be aggravated, and the strength of bowing can be significantly improved. In addition, because of the-part of the guide 22 from the molding tree month 40, the lead frame 20 (mould enough heart 4 Λ ... bottom # 大 出 'compared to the traditional competition between the two circuit board 70 The empty one, that is, == wide. As a result, as shown in Figure 4C :: The two circuit boards 70 contain foreign substances such as paste, adhesive substances, such as dust, and the corresponding mechanical damage. The part f of the object f, etc.) will also cause the solder ball 60 to have a good contact with the circuit board 70 due to the protruding portion of the guide pin 22 of the acoustic chamber 2 and the high shaw of the solder ball 60. The connection plate =-come, the poor electrical properties caused by the presence of foreign substances 71 can significantly suppress the phenomenon of I Ή 60 from electricity. Carved strong 'according to the present invention' can be used to make semiconducting adhesive! Sheets' in the manufacturing process, there is no bad hit & nuclear plastic plate, there is no need to fear the risk of residual adhesive residue, 4 increase the QFN The mounting strength and reliability of the circuit board. The supplier can provide QFN and its manufacturing method, which has high mounting strength to circuit board temples and excellent mounting reliability. It must be mentioned that although the above specific embodiment is explained by the application example of manufacturing QFN using the 316466 24 200522252 frame, the present invention can be applied to any semiconductor device having any structure as long as it has It is on the semiconductor element mounting portion formed on the lead frame or the circuit board, and the semiconductor element can be sealed with a molding resin. Secondly, although the present invention is further explained by operating examples and comparative examples, these examples are not limited to the present invention at all. "Operation Examples 1-5, the ingredients shown in Table 1 are mixed in a mass ratio shown in Table! Under a tetrahydrofuran solvent to prepare an adhesive composition. Must be mentioned in S 1, also No mass ratio ((() (c)) / (b)) of thermosetting resin ⑷ / thermoplastic resin (total amount of thermosetting resin ⑷ and thermoplastic resin ⑷) to releasability-imparting component (b) Example (⑷ / ⑷X is the same as the comparative implementation). (Berry ratio of ")" Second, after applying the adhesive composition, polyimide resin 朕 (trade name: KAPTON 100EN, Du) The glass transition temperature of 'thickness of 25 microns' manufactured by Pont_T〇ray Co., Ltd. is not less than 3⑻. C, the coefficient of 敎 expansion is 16 ppm / t) as a heat-resistant base material, so that the thickness after drying can reach up to 10 micron, the obtained film was dried under a pit for $ minutes to obtain the adhesive sheet of the present invention. "Comparative Example 1, f The components shown in Table 1 were mixed under a tetrahydrofuran solvent in the mass ratio shown in Table 1 to prepare an adhesive composition. Then, the same furnace skin as in the working example was prepared. The difference in the formation of the sticky beans for comparison for the purpose of labor, work, and private order is that in the Zhishi private # „^, forming the adhesive layer, the adhesive composition 316466 200522252 is coated on the film, so that The thickness after drying was 5 micrometers. "Comparative Example 2" The components shown in Table 1 were mixed in a toluene solvent at a mass ratio shown in Table 1 to prepare an adhesive composition. Then, the adhesive composition was coated on the same heat-resistant base material as in the working example so that the thickness after drying became 5 μm, and then the obtained sheet was dried at 160 ° C. for 5 minutes to obtain Sticky sheet for comparison. "Comparative Example 3" A sticky tablet was prepared by the same procedure as Comparative Example 1, except that the ingredients shown in Table 1 were mixed under a tetrahydrofuran solvent at a mass ratio shown in Table 1 to An adhesive composition was prepared. It must be mentioned that the symbols in Table 1 indicate the following components. (A1): epoxy resin (trade name "AT-501" manufactured by DAICEL CHEMICAL INDUSTRIES CO., LTD., Weight average molecular weight 120,000), (A2): epoxy resin (trade name "EPKQTE 828" is JAPAN EPOXY RESINS CO., LTD., Manufactured), (A3): epoxy resin (trade name "EPKOTE 604" is manufactured by JAPAN EPOXY RESINS CO., LTD.,), (A4): epoxy resin ( The product name "HP-7200" is manufactured by DAINIPPON INK AND CHEMICALS, INC., (A5): phenol resin (product name "TPM" is manufactured by NIPPON KAYAKU CO., LTD.), 26 316466 200522252
CKM-2400”為 SHOWAHIGH (A6):酚樹脂（商品名稱CI<：]V[CKM-2400 ”is SHOWAHIGH (A6): phenol resin (trade name CI <:] V [
名稱 “XC-96-A4464” 為 GE POLYMER C〇.，LTD·所製造广 (B 1):變性矽酮油（商品名The name "XC-96-A4464" is manufactured by GE POLYMER Co., Ltd. (B 1): denatured silicone oil (trade name
Toshiba Silicones Co.，Ltd.戶斤义^) “KF -105” 為 Shin-Etsu “KF-861” 為 Shin-Etsu (B2):變性矽酮油（商品名稱Toshiba Silicones Co., Ltd. Tojin ^) "KF-105" is Shin-Etsu "KF-861" is Shin-Etsu (B2): denatured silicone oil (trade name
Chemical Co·，Ltd.所製造）’ (B3) ·變性石夕綱油（商名稱(Made by Chemical Co., Ltd.) ’(B3)
Chemical Co.，Ltd·所製造）， (ci):丙烯腈-丁二烯榛膠（商品名稱“Nip〇i 1001’’為 Nippon Zeon Co.，Ltd.所製造，重量平均分子量30，〇〇〇)， (C2):聚酿胺樹脂（商品名稱“Macro Melt 6238為(Manufactured by Chemical Co., Ltd.), (ci): acrylonitrile-butadiene hazel gum (trade name "Nip〇i 1001" manufactured by Nippon Zeon Co., Ltd., weight average molecular weight 30,000). 〇), (C2): Polyamine resin (trade name "Macro Melt 6238 is
Henkel Japan Co·，Ltd·所製造）， (C3)·笨乙稀_ 丁二烯—苯乙坤樹脂（商品名稱Tuftec 1^1911’’為八331^^36丨（^0.，1^.所製造，重量平均分子量 11〇,〇〇〇)， (C4) ·聚酿亞胺樹脂（為 T〇in〇egawa Paper Co·，Ltd.所 製造’含芳族基矽氧烷聚醯亞胺，重量平均分子量50,000)， (C5):聚烯基矽氧烷/聚烷基氫石夕氧烷混合溶液（商品 名稱乂40 31〇3”為8]1丨11-价511(^116111^1(^〇.，1^(1.所製造）， (D1).·硬化加速劑（為 shik〇ku Chemicals Corporation 所製造，為2-乙基肛曱基咪唑） (D2) ·麵觸媒溶液（商品名稱“PL 50T，，為Shin-Etsu(Manufactured by Henkel Japan Co., Ltd.), (C3) · Stupid Ethylene Butadiene-Styrene Resin (Tuftec 1 ^ 1911 "is eight 331 ^^ 36 丨 (^ 0., 1 ^ Manufactured, weight average molecular weight 110,000), (C4) Polyimide resin (made by Toonoegawa Paper Co., Ltd., 'aromatic siloxane-containing polyfluorene Amine, weight average molecular weight 50,000), (C5): polyalkenylsiloxane / polyalkylhydroxyloxane mixed solution (trade name 商品 40 31〇3 ”is 8] 1 丨 11-valent 511 (^ 116111 ^ 1 (^ 〇., 1 ^ (manufactured by 1.), (D1). · Hardening accelerator (manufactured by shikoku Chemicals Corporation, 2-ethylanthryl imidazole) (D2) · contact Vehicle solution (trade name "PL 50T," Shin-Etsu
Chemical Co·，Ltd·所製造）。 (評估） 27 316466 200522252 下面為評估準則與評估方法 <貯存模數> 將各實施例中所製備的黏 布在脫模性膜…形成片體====塗 件之下乾燥所 片肢在與晶粒接著程庠中相 行2小時熱處理，以梦嘴：:;:：，亦即在175。。下進(Manufactured by Chemical Co., Ltd.). (Evaluation) 27 316466 200522252 The following are the evaluation criteria and evaluation methods < Storage modulus > The adhesive cloth prepared in each example was released on a release film ... to form a sheet body ==== Drying the sheet under the coating The limbs were heat treated for 2 hours with the grains and Cheng Cheng, taking the dream mouth ::; ::, that is, at 175. . Go down
燥後之厚度係調定it層或黏貼層的脫模性㈣ 来X m传具有黏者層或黏貼層的脫模性膜切割成為5毫 為毛^尺寸’將頻率調定為π Hz，將加熱速率調定 ^童，且使用彈性模數測量裝置（商品名稱： 旦 R〇N DDV-11’’，為0RIENTECH C〇·，LTD·所製造〕 測量在150至25代限制内的貯存模數。得到在該限制内 之此溫度下的最低貯存模數。 “不良打線” 將各實施例中所得到的黏性片或黏貼片透過積層法黏# 附到QFN所用具有2〇〇毫米χ 6〇毫米外部尺寸的導線架 (種金•鈀-鎳電鍍銅導線架，4χ 16陣列排列（總共Μ 件）’封裝大小10毫米χ 1〇毫米，84根腳）。隨後，於使 袞氧=員型aa粒接著劑安裝一虛晶片（dummy仏丨口)(6毫米 :6笔米，厚度〇·4毫米）（其上面在導線架的半導體元件安 衣部份上具有經氣相沉積之鋁）之後，使用銲線接合裝置 (商品名稱“UTC-470BI，，為 SHINKAWA CO·，LTD·所製造） 316466 28 200522252 透過金線將該虛晶片與導腳彼此電性連接， 用的荷重為。鄭所使用的加工時間為1〇毫秒二所: 熱溫度為210t，且USP〇W£R為3〇。 腳’加 其後’檢查所得64件之封裝件並且偵 腳邊連接的封裝件數目作為不良打線產生數。良導 “模塑溢料” 使用完成打線評估之後的導線 使用環氧類型模塑樹脂(聯苯基環氧類型、， 製程時間…二1 將加熱溫度所用的< 早— 里，並且使用模塑樹脂透過轉移鑄模 =封(晶粒-模塑程序)。其後’檢查使用 封 連臭：广件封裝件且偵檢出模塑樹脂漏裂到導腳端子；: =?(導腳的黏性片或黏貼片側之表面:卜： 封叙件數目作為模塑溢料產生數。 、之 “黏著劑殘渣，， 評估模塑樹脂密封的導線架之模塑溢料，於 分鐘的條件下將黏性片或黏貼片㈣。 毛未/ ( /双查攸其上剝離掉黏性片或黏貼片之後所含64件之 子二二測疋出在剝離側表面上有殘留黏著劑(於導腳端 殘二脂模塑陳封裝件數目作為有 ‘‘導腳尖端突出量，， 仕办自乂玄杈塑樹脂底部的導腳尖端突出量係利用該用以評 1古I占者劑殘渣之導加 一 v、、泉木而加以測置。亦即，使用一表面粗 316466 29 200522252 度計（商品名稱“SURFC0M 〗〗0β”，為T〇ky〇 Seimhsu α 所衣k) ’對k其上剝離掉黏性片或黏貼片之後所含約 料件之封裝件，測量在該導腳外部連接側尖端與模塑樹^ 之間的垂直差異，且計算出其平均值。 曰 再者，雖然黏著層的厚度為10微米且比傳統者 其根本沒有殘留黏著劑㈣。另外，導腳尖端（外部 =:)從模塑樹脂底部的突出量不小於2微米，使得可 的高度可靠性，亦即’於將所得半導體元件 二::Γ之過程中’可以使焊劑以三維方式黏附以 v腳底部延伸到側表面之導腳部份。 組成有將可剝離性賦予成分_配到黏著劑 存模數，：：!:：：：二t3中’雖然有良好的黏著層貯 塑溢料，雖黏著層的厚产為”“有毛生不良打線和杈 固二 =黏著劑殘渣殘留下來。於沒有調配熱 r生树月曰（a)和可剝離性 的比較實施例2之中，η刀（b)而製備黏著劑組成物 導體裝置之中，發生#1者e的貯存模數極低，在製造半 量的黏著劑殘㈣留打線和模塑溢料，且有大 到的各半導體裝置不且有，由比較實施例i-3所得 端，且其安裝可靠性低。塑樹脂底部突出的導腳尖 316466 200522252 表1The thickness after drying is to set the releasability of the it layer or the adhesive layer. Let X m pass the release film with the adhesive layer or the adhesive layer cut into 5 millimeters for the size of the wool ^ 'set the frequency to π Hz, The heating rate was adjusted, and an elastic modulus measuring device (trade name: Den RoN DDV-11 '', manufactured by 0RIENTECH CO., LTD.) Was used to measure the storage within the 150 to 25 generation limit Modulus. Get the lowest storage modulus at this temperature within this limit. "Poor wiring" The adhesive sheet or sticker obtained in each example was attached to the QFN by lamination method with 200 mm χ 60 mm lead frame (kind of gold • palladium-nickel electroplated copper lead frame, 4 × 16 array arrangement (total M pieces) 'package size 10 mm x 10 mm, 84 feet). Oxygen = aa type of aa particle adhesive installed a dummy chip (6 mm: 6 pens, thickness 0.4 mm) (it has a gas phase on the semiconductor element mounting part of the lead frame After depositing aluminum, use a wire bonding device (trade name "UTC-470BI", SHINKAWA CO , LTD · manufactured) 316466 28 200522252 The dummy chip and the guide pin are electrically connected to each other through a gold wire, the load used is. The processing time used by Zheng is 10 milliseconds. The thermal temperature is 210t, and USP〇 W £ R is 30. Pin 'plus after' inspection of the 64 packages obtained and the number of packages connected to the pin as the number of defective wires. Good "mold flash" Use the wires after completing the wire assessment Use epoxy type molding resin (biphenyl epoxy type, process time ... 2 1) The heating temperature is used as early as possible, and the molding resin is used to transfer through the mold = seal (die-molding procedure) . Afterwards' check the use of sealing odor: Wide package and detection of molding resin leakage to the guide pin terminals; =? (Adhesive sheet of the guide pin or the surface on the side of the adhesive sheet: Bu: number of seals As the number of molding flashes, the "residues of the adhesive," evaluate the molding flashes of the molded resin sealed lead frame, and the adhesive sheet or the adhesive sheet is smashed under the condition of minutes. Mao Wei / (/ double Check out the 64 pieces contained in the adhesive sheet or sticker after peeling it off. In the second test, it was found that there is residual adhesive on the peeling side surface (the number of residual resin molding on the guide pin end is the number of protrusions of the guide pin tip.) The protruding amount of the tip of the guide foot is measured by using the guide used to evaluate the residue of an ancient I occupant agent plus a v, spring wood. That is, a rough surface 316466 29 200522252 degree meter (trade name "SURFC0M" 〖0β "is the coat of T〇ky〇Seimhsu α k) 'For the package of the material contained after the adhesive sheet or the adhesive sheet is peeled off, measure the tip and molding at the external connection side of the guide pin The vertical difference between trees ^, and calculate its average. In addition, although the thickness of the adhesive layer is 10 micrometers, it does not have any adhesive residue at all compared to the conventional one. In addition, the protruding amount of the tip of the guide pin (external = :) from the bottom of the molding resin is not less than 2 micrometers, which makes it possible to have a high degree of reliability, that is, 'in the process of combining the obtained semiconductor element 2 :: Γ', the solder can be used to Three-dimensionally adhere to the guide foot portion extending from the bottom of the v-foot to the side surface. The composition has the peelability-imparting ingredient _ formulated in the adhesive storage modulus, ::::::: t2 'Although there is a good adhesive layer to store plastic overflow, although the thickness of the adhesive layer is "hairy" Unhealthy wiring and solid two = adhesive residues remain. In Comparative Example 2 in which the heat-generating raw tree month (a) and the peelability were not prepared, η knife (b) was used to prepare the adhesive composition conductor device, and the storage modulus pole of # 1 person e occurred. Low, leaving half of the adhesive residue in the manufacture of wire and molding flash, and there are not too many semiconductor devices, the end obtained by Comparative Example i-3, and its mounting reliability is low. Guide toes protruding from the bottom of plastic resin 316466 200522252 Table 1
表2Table 2
本發明用以製造半導體裝置之黏性片可應用來製造 QFN等半導體裝置。本發明之半導體裝置及其製造方法可 較佳地應用於QFN等半導體裝置。 雖然已經在上面說明且闡述本發明的較佳具體實例， 316466 31 200522252 =、須了膝此等僅為本發明的範例且不 ==違:本:明的旨意或範圍下可以做出^ ，、他伶改。因此，本發明不可視為係受前 面的說明部份所限制，且其僅受 [圖式簡單說明] 更附申-專利爾限定。 斷面=®為本發明製造半導體裝置用之㈣片之示意橫 弟2圖為適用於使用本發明製造半導體裝置用之黏性 片製造QFN的導線架之平面圖。 第3A至3F圖為顯示使用本發明製造半 黏性片製造QFN的方法流程圖。 第4A至4C圖為顯示使用本發明製造半導體裝置用之 黏性片製成的QFN之安裝程序圖式。 第5A至5D圖為顯示使用傳統製造半導體裝置用之黏 性片製造QFN的方法流程圖。 第6A至6C圖為顯示使用傳統製造半導體裝置用之黏 性片所得之QFN的安裝程序圖式。 [主要元件符號說明] 1〇 、 110 黏性片 11 > 111 耐熱性基底材料 12 、 112 黏著層 20、 120 導線架 21 、 121 半導體裝置安裝部份 22 、 122 導腳 30 半導體元件 31 、 131 銲線 40、 140 模塑樹脂 50 、 150 QFNs 130 半導體裝置 32 316466 200522252 電路板 60、160 焊球 70、170 71、171 外來物質 33 316466The adhesive sheet used for manufacturing semiconductor devices of the present invention can be applied to manufacture semiconductor devices such as QFN. The semiconductor device and its manufacturing method of the present invention can be preferably applied to semiconductor devices such as QFN. Although the preferred specific examples of the present invention have been described and explained above, 316466 31 200522252 = and the above are only examples of the present invention and are not = = Violation: Ben: This can be made within the purview or scope of ^, He changed his mind. Therefore, the present invention cannot be regarded as being limited by the foregoing description, and it is only limited by the [Simplified Description of the Drawings] more attached patents. Section = Schematic diagram of the cymbal for manufacturing semiconductor devices according to the present invention. Figure 2 is a plan view of a lead frame suitable for manufacturing QFNs using the adhesive sheet for manufacturing semiconductor devices of the present invention. 3A to 3F are flowcharts showing a method for manufacturing a QFN using a semi-adhesive sheet according to the present invention. Figures 4A to 4C are diagrams showing a mounting procedure of a QFN made using an adhesive sheet for manufacturing a semiconductor device according to the present invention. 5A to 5D are flowcharts showing a method for manufacturing a QFN using an adhesive sheet for a conventional semiconductor device. Figures 6A to 6C are diagrams showing the mounting procedure of a QFN obtained using a conventionally manufactured adhesive sheet for a semiconductor device. [Description of main component symbols] 10, 110 Adhesive sheet 11 > 111 Heat-resistant base material 12, 112 Adhesive layer 20, 120 Lead frame 21, 121 Semiconductor device mounting portion 22, 122 Guide pin 30 Semiconductor element 31, 131 Bonding wire 40, 140 Molding resin 50, 150 QFNs 130 Semiconductor device 32 316466 200522252 Circuit board 60, 160 Solder ball 70, 170 71, 171 Foreign matter 33 316466
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003378118A JP4319892B2 (en) | 2003-11-07 | 2003-11-07 | Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device |
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| Publication Number | Publication Date |
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| TW200522252A true TW200522252A (en) | 2005-07-01 |
| TWI249222B TWI249222B (en) | 2006-02-11 |
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| TW093133583A TWI249222B (en) | 2003-11-07 | 2004-11-04 | Adhesive sheet for producing semiconductor device, semiconductor device therewith, and manufacturing method therefor |
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| Country | Link |
|---|---|
| JP (1) | JP4319892B2 (en) |
| KR (1) | KR100618640B1 (en) |
| CN (1) | CN1300845C (en) |
| MY (1) | MY140213A (en) |
| SG (1) | SG150377A1 (en) |
| TW (1) | TWI249222B (en) |
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| TWI717587B (en) * | 2017-02-28 | 2021-02-01 | 日商住友電木股份有限公司 | Pressure-sensitive adhesive tape for processing semiconductor substrate and method for producing semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100635053B1 (en) | 2005-06-21 | 2006-10-16 | 도레이새한 주식회사 | Adhesive tape for electronic components |
| JP4538398B2 (en) * | 2005-10-31 | 2010-09-08 | 株式会社巴川製紙所 | Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device |
| JP4505645B2 (en) * | 2006-02-17 | 2010-07-21 | フジコピアン株式会社 | Affixing the fixed sheet |
| JP4505644B2 (en) * | 2006-02-17 | 2010-07-21 | フジコピアン株式会社 | Fixed sheet |
| JP4505646B2 (en) * | 2006-02-20 | 2010-07-21 | フジコピアン株式会社 | Fixed sheet |
| JP4505649B2 (en) * | 2006-03-23 | 2010-07-21 | フジコピアン株式会社 | Fixed sheet |
| JP5067927B2 (en) * | 2007-03-27 | 2012-11-07 | 日東電工株式会社 | Adhesive film for semiconductor device manufacturing |
| KR100910672B1 (en) * | 2007-08-03 | 2009-08-04 | 도레이새한 주식회사 | Heat-resistant adhesive sheet |
| KR101073698B1 (en) | 2009-09-07 | 2011-10-14 | 도레이첨단소재 주식회사 | Lamination method of adhesive tape and lead frame |
| JP2011134851A (en) * | 2009-12-24 | 2011-07-07 | Hitachi Chem Co Ltd | Semiconductor device, method for manufacturing the same, wiring base material for connecting semiconductor device, wiring board for mounting semiconductor device, and method for manufacturing the same |
| JP2011134960A (en) * | 2009-12-25 | 2011-07-07 | Hitachi Chem Co Ltd | Semiconductor device, method for manufacturing the same, wiring base material for connecting semiconductor element, wiring board for mounting semiconductor device, and method for manufacturing the same |
| KR20110087547A (en) * | 2010-01-26 | 2011-08-03 | 도레이첨단소재 주식회사 | Manufacturing method of semiconductor device using a heat-resistant adhesive sheet |
| CN104658919A (en) * | 2010-09-01 | 2015-05-27 | 群成科技股份有限公司 | Quad-flat no-lead packaging method |
| CN102386105B (en) * | 2010-09-01 | 2016-02-03 | 群成科技股份有限公司 | Four limit flat non-connection pin method for packing and the structure made thereof |
| CN102386104B (en) * | 2010-09-01 | 2014-11-12 | 群成科技股份有限公司 | Quadrilateral flat pin-free encapsulation method |
| TWI510155B (en) * | 2011-04-26 | 2015-11-21 | Adl Engineering Inc | Semiconductor package structure and method for fabricating the same |
| JP5687230B2 (en) * | 2012-02-28 | 2015-03-18 | 信越化学工業株式会社 | Wafer processing body, wafer processing member, wafer processing temporary adhesive, and thin wafer manufacturing method |
| JP5824402B2 (en) * | 2012-04-02 | 2015-11-25 | 株式会社巴川製紙所 | Mask sheet for manufacturing semiconductor device and method for manufacturing semiconductor device using the same |
| JP5925560B2 (en) * | 2012-04-02 | 2016-05-25 | 株式会社巴川製紙所 | Mask sheet for manufacturing semiconductor device and method for manufacturing semiconductor device using the same |
| KR101557841B1 (en) | 2012-12-07 | 2015-10-06 | 제일모직주식회사 | Anisotropic conductive film |
| JP6322026B2 (en) * | 2014-03-31 | 2018-05-09 | 日東電工株式会社 | Die bond film, die bond film with dicing sheet, semiconductor device, and method for manufacturing semiconductor device |
| CN105720021B (en) * | 2016-01-25 | 2020-02-11 | 苏州日月新半导体有限公司 | Integrated circuit package and method of manufacturing the same |
| JP6956492B2 (en) | 2017-02-02 | 2021-11-02 | 株式会社巴川製紙所 | Adhesive sheet for manufacturing semiconductor devices and manufacturing method of semiconductor devices using it |
| JP6909171B2 (en) | 2018-02-12 | 2021-07-28 | 株式会社巴川製紙所 | Adhesive sheet for manufacturing semiconductor devices and manufacturing method of semiconductor devices using it |
| JP7187906B2 (en) * | 2018-09-10 | 2022-12-13 | 昭和電工マテリアルズ株式会社 | Semiconductor device manufacturing method |
| JP7447647B2 (en) * | 2020-04-06 | 2024-03-12 | 株式会社レゾナック | Temporary protective film for semiconductor encapsulation molding and its manufacturing method, lead frame with temporary protective film, encapsulating molded body, and method for manufacturing a semiconductor package |
| CN115699273A (en) | 2020-05-26 | 2023-02-03 | 株式会社巴川制纸所 | Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device using the same |
| CN116848635A (en) | 2021-02-16 | 2023-10-03 | 株式会社巴川制纸所 | Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device using the same |
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| JP2002093830A (en) * | 2000-09-14 | 2002-03-29 | Sony Corp | Manufacturing method of chip-like electronic component, and manufacturing method of pseudo-wafer used for the manufacturing method |
| JP4173346B2 (en) * | 2001-12-14 | 2008-10-29 | 株式会社ルネサステクノロジ | Semiconductor device |
| US20030190466A1 (en) * | 2002-04-03 | 2003-10-09 | Katsuji Nakaba | Adhesive sheet for producing semiconductor devices |
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- 2003-11-07 JP JP2003378118A patent/JP4319892B2/en not_active Expired - Lifetime
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| TWI717587B (en) * | 2017-02-28 | 2021-02-01 | 日商住友電木股份有限公司 | Pressure-sensitive adhesive tape for processing semiconductor substrate and method for producing semiconductor device |
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| Publication number | Publication date |
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| MY140213A (en) | 2009-11-30 |
| CN1617332A (en) | 2005-05-18 |
| JP4319892B2 (en) | 2009-08-26 |
| KR20050044259A (en) | 2005-05-12 |
| TWI249222B (en) | 2006-02-11 |
| SG150377A1 (en) | 2009-03-30 |
| KR100618640B1 (en) | 2006-09-06 |
| JP2005142401A (en) | 2005-06-02 |
| CN1300845C (en) | 2007-02-14 |
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