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TW200511440A - A method for manufacturing a trench power MOSFET with a low gate electrode capacitance - Google Patents

A method for manufacturing a trench power MOSFET with a low gate electrode capacitance

Info

Publication number
TW200511440A
TW200511440A TW092124782A TW92124782A TW200511440A TW 200511440 A TW200511440 A TW 200511440A TW 092124782 A TW092124782 A TW 092124782A TW 92124782 A TW92124782 A TW 92124782A TW 200511440 A TW200511440 A TW 200511440A
Authority
TW
Taiwan
Prior art keywords
manufacturing
gate electrode
power mosfet
electrode capacitance
low gate
Prior art date
Application number
TW092124782A
Other languages
Chinese (zh)
Other versions
TWI239570B (en
Inventor
Yen-Yuan Huang
Original Assignee
Advanced Power Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Power Electronics Corp filed Critical Advanced Power Electronics Corp
Priority to TW92124782A priority Critical patent/TWI239570B/en
Publication of TW200511440A publication Critical patent/TW200511440A/en
Application granted granted Critical
Publication of TWI239570B publication Critical patent/TWI239570B/en

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  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

The present invention provides method for manufacturing a trench power MOSFET with a low gate electrode capacitance. Two thermal oxidation processes are used in this present invention. A nitride spacer is formed in the trench structure to ensure the oxide layer only formed in the bottom of the trench structure in the first thermal oxidation process. Next, the nitride spacer is removed. Then, a second thermal oxidation process is performed to form the gate oxide layer.
TW92124782A 2003-09-08 2003-09-08 A method for manufacturing a trench power MOSFET with a low gate electrode capacitance TWI239570B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW92124782A TWI239570B (en) 2003-09-08 2003-09-08 A method for manufacturing a trench power MOSFET with a low gate electrode capacitance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92124782A TWI239570B (en) 2003-09-08 2003-09-08 A method for manufacturing a trench power MOSFET with a low gate electrode capacitance

Publications (2)

Publication Number Publication Date
TW200511440A true TW200511440A (en) 2005-03-16
TWI239570B TWI239570B (en) 2005-09-11

Family

ID=37007473

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92124782A TWI239570B (en) 2003-09-08 2003-09-08 A method for manufacturing a trench power MOSFET with a low gate electrode capacitance

Country Status (1)

Country Link
TW (1) TWI239570B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI424489B (en) * 2011-04-29 2014-01-21 Anpec Electronics Corp Method for fabricating a semiconductor power device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI424489B (en) * 2011-04-29 2014-01-21 Anpec Electronics Corp Method for fabricating a semiconductor power device

Also Published As

Publication number Publication date
TWI239570B (en) 2005-09-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees