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TW200410055A - Cleaning solution for removing photoresist - Google Patents

Cleaning solution for removing photoresist Download PDF

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Publication number
TW200410055A
TW200410055A TW091135939A TW91135939A TW200410055A TW 200410055 A TW200410055 A TW 200410055A TW 091135939 A TW091135939 A TW 091135939A TW 91135939 A TW91135939 A TW 91135939A TW 200410055 A TW200410055 A TW 200410055A
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Taiwan
Prior art keywords
compound
water
formula
group
patent application
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TW091135939A
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Chinese (zh)
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TWI247199B (en
Inventor
Gen-Shou Li
Dai-Chang Jeng
Chi-Shiou Shen
Gen-Guei Kung
Cheng-Chiou Li
Young Sun Hwang
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Hynix Semiconductor Inc
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Publication of TW200410055A publication Critical patent/TW200410055A/en
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Publication of TWI247199B publication Critical patent/TWI247199B/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/04—Carboxylic acids or salts thereof
    • C11D1/06—Ether- or thioether carboxylic acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

The present invention relates to cleaning solutions for removing photoresist resins and a method of forming patterns using the same. The cleaning solution of the present invention comprises water (H2O) as main component and one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (-COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (-SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, and n are defined in the specification.

Description

200410055 A7 _____B7_ 五、發明說明（！） 發明背景 發明所屬之技術領域 (請先閱讀背面之注意事項再填寫本頁) 所揭示者爲去除光阻劑樹脂之洗滌液，其係用以在顯 影後之最後程序期間淸洗半導體基材。更具體言之’所揭 示者爲一種去除光阻劑之洗滌液，其包含作爲主成分的水 (h2o)、作爲添加劑之一或多種界面活性劑（其係選自 於聚氧化烯化合物、式1之醇胺與含羧酸（-COOH)基團 之碳氫化合物所成的鹽、式1之醇胺與含磺酸（-SO3H) 基團之碳氫化合物所成的鹽、聚乙二醇化合物、式3之化 合物、包含式4之重複單元且分子量範圍從1000至10000 的化合物和經聚醚變性之矽化合物所組成的群組）及醇化 合物。 先前技術 隨著裝置日益縮小，光阻劑圖案也具有更高的長寬比 (光阻劑的厚度，所形成圖案的高/線寬）。 當所形成之光阻劑圖案高度超過臨界高度時，毛細力 便超過光阻劑的彈性，因而造成圖案在洗滌過程中的侵蝕 〇 爲解決這個問題，乃藉由增加光阻劑的內部彈性或降 低其表面張力來增強底層與光阻劑之間的黏合力。 一般而言’在半導體基材上形成光阻劑圖案的方法包 括下列步驟： 在半導體基材上形成一層底層； —_ 5 ___ %丰紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 200410055 A7 _B7____ 五、發明說明（> ) 在該底層上形成光阻劑膜；及 利用曝光及顯影程序使一部份底層曝光而形成光阻劑 圖案。 因此，在正型光阻劑膜的情況中，曝光區域的光阻劑 膜藉顯影劑除去，然後形成光阻劑圖案。 如上所述，在光阻劑圖案顯影之後，則藉由自旋轉裝 置上方部分將水分散至半導體基材來去除殘留在半導體基 材上面的光阻劑膜。此時，圖案會因蒸餾水的高表面張力 而被侵蝕。 習知洗滌液包含陰離子型界面活性劑以避免高長寬比 光阻劑圖案的塌陷。舉例來說，US 6,451，565 ( 2002.09.17 )述及洗滌液含有含氟陰離子型界面活性劑與去離子水以 避免圖案的塌陷。 發明內容 發明摘述 所揭示者爲一種去除光阻物質之洗滌液，其降低表面 張力以避免光阻劑圖案的塌陷。 亦揭示者爲一種形成光阻劑圖案的方法，其係使用所 揭不之洗條液來去除光阻物質。 亦揭示者爲利用上述方法所製得之半導體裝置。 圖式簡單說明 圖1至15是得自實施例32至46的光阻劑圖案照片。 6 紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)200410055 A7 _____B7_ V. Description of the Invention (!) Background of the Invention The technical field to which the invention belongs (please read the precautions on the back before filling out this page) What is disclosed is a cleaning solution for removing photoresist resin, which is used after development During the final procedure, the semiconductor substrate is cleaned. More specifically, what is disclosed is a photoresist-removing washing liquid, which contains water (h2o) as a main component, one or more surfactants (which are selected from polyoxyalkylene compounds, formulas) Salt formed from alcohol amine of 1 and hydrocarbon compound containing carboxylic acid (-COOH) group, salt formed from alcohol amine of formula 1 and hydrocarbon compound containing sulfonic acid (-SO3H) group, polyethylene glycol An alcohol compound, a compound of formula 3, a compound comprising a repeating unit of formula 4 having a molecular weight ranging from 1000 to 10,000 and a polyether-denatured silicon compound) and an alcohol compound. Prior Art As devices are shrinking, photoresist patterns have higher aspect ratios (thickness of photoresist, height / line width of the pattern formed). When the height of the photoresist pattern formed exceeds a critical height, the capillary force exceeds the elasticity of the photoresist, thus causing the pattern to erode during the washing process. To solve this problem, the internal elasticity of the photoresist is increased or Reduce its surface tension to enhance the adhesion between the substrate and the photoresist. Generally speaking, the method of forming a photoresist pattern on a semiconductor substrate includes the following steps: forming a bottom layer on the semiconductor substrate; —_ 5 ___% Feng paper size is applicable to Chinese National Standard (CNS) A4 specification (210 X 297 (Mm) 200410055 A7 _B7____ 5. Description of the invention (&); forming a photoresist film on the bottom layer; and exposing a part of the bottom layer to form a photoresist pattern by exposure and development procedures. Therefore, in the case of a positive type photoresist film, the photoresist film in the exposed area is removed by a developer, and then a photoresist pattern is formed. As described above, after the photoresist pattern is developed, the photoresist film remaining on the semiconductor substrate is removed by dispersing water to the semiconductor substrate by the upper portion of the spin device. At this time, the pattern is eroded by the high surface tension of the distilled water. Conventional washing solutions contain anionic surfactants to avoid the collapse of high aspect ratio photoresist patterns. For example, US 6,451,565 (2002.09.17) states that the washing liquid contains a fluorine-containing anionic surfactant and deionized water to prevent the pattern from collapsing. SUMMARY OF THE INVENTION The present disclosure is a cleaning solution for removing photoresist substances, which reduces the surface tension to avoid the collapse of the photoresist pattern. Also disclosed is a method for forming a photoresist pattern, which uses a strip cleaning solution that is not disclosed to remove photoresist substances. Also disclosed is a semiconductor device made by the above method. Brief Description of the Drawings Figures 1 to 15 are photographs of photoresist patterns obtained from Examples 32 to 46. 6 Paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

200410055 A7 __B7___ 五、發明說明（>]) 圖16和17是得自實施例47的光阻劑圖案照片。 圖18至24是得自實施例48至54的光阻劑圖案照片 〇 圖25和26是得自實施例55的光阻劑圖案照片。 圖27至33是得自實施例56至62的光阻劑圖案照片 〇 圖34是得自比較實施例1的光阻劑圖案照片。 實施方式 目前較佳具體實例之詳細說明 一種所揭示的去除光阻物質之洗滌液包含作爲主成分 的水（H20)與作爲添加劑的一或多種界面活性劑，該界 面活性劑係選自於聚氧化烯化合物、式1之醇胺與含羧酸 (-COOH)基團之碳氫化合物所成的鹽、式1之醇胺與含 磺酸（-S03H)基團之碳氫化合物所成的鹽、聚乙二醇化 合物、式3化合物、包含式4重複單元且具有分子量範圍 從1000至10000的化合物及經聚醚變性之矽化合物所組成 的群組。 [式1] (請先閱讀背面之注意事項再填寫本頁) — II 訂·！ — I! 線. HO \ (CH2)/200410055 A7 __B7___ 5. Description of the invention (>]) Figures 16 and 17 are photos of the photoresist pattern obtained from Example 47. 18 to 24 are photos of the photoresist pattern obtained from Examples 48 to 54. Figs. 25 and 26 are photos of the photoresist pattern obtained from Example 55. 27 to 33 are photoresist pattern photographs obtained from Examples 56 to 62. Fig. 34 is a photoresist pattern photograph obtained from Comparative Example 1. Detailed description of the presently preferred specific examples A disclosed photoresist-removing washing liquid includes water (H20) as a main component and one or more surfactants as additives, the surfactants being selected from polymer An alkylene oxide compound, a salt of an alcohol amine of Formula 1 and a hydrocarbon compound containing a carboxylic acid (-COOH) group, a salt of an alcohol amine of Formula 1 and a hydrocarbon compound containing a sulfonic acid (-S03H) group A group consisting of a salt, a polyethylene glycol compound, a compound of Formula 3, a compound containing a repeating unit of Formula 4, having a molecular weight ranging from 1000 to 10,000, and a polyether-denatured silicon compound. [Formula 1] (Please read the notes on the back before filling this page) — Order II! — I! Line. HO \ (CH2) /

R2 Ri 其中： ^_7 紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 200410055 A7 五、發明說明（4 ) 1和R2是氫、CVC^o烷基和CVCw烷基醇；及 ，是範圍從1至10的整數； [式2]R2 Ri Among them: ^ _7 The paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 200410055 A7 V. Description of the invention (4) 1 and R2 are hydrogen, CVC ^ o alkyl, and CVCw alkyl alcohol; And is an integer ranging from 1 to 10; [Eq. 2]

其中： m是範圍從1至500的整數；及 從62至20000的數目平均分子量； [式3] R 〇 L J1 /N^AV|— R4 Ο ; 其中： R3和R4是氫、Q-Cn烷基、芳基、不對稱酸酯（asin )、Q-Cw胺基烷基、胺基芳基、羧酸基或磺酸基； R5是胺基、羥基、Q-Ck烷基、芳基、不對稱酸酯、 胺基烷基、胺基芳基、羧酸基或磺酸基； 八是伸烷基或C3-C1()芳族碳氫化合物；及 η是範圍從0至2的整數；以及 [式4] (請先閱讀背面之注意事項再填寫本頁) ---- 1 I I 訂------I--· fi蠢紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 200410055 A7 B7Where: m is an integer ranging from 1 to 500; and a number average molecular weight from 62 to 20000; [Formula 3] R 〇L J1 / N ^ AV | — R4 Ο; where: R3 and R4 are hydrogen, Q-Cn Alkyl, aryl, asin, Q-Cw aminoalkyl, aminoaryl, carboxylic or sulfonic group; R5 is amine, hydroxyl, Q-Ck alkyl, aryl , Asymmetric acid ester, aminoalkyl, aminoaryl, carboxylic acid, or sulfonic acid; eight is an alkylene or C3-C1 () aromatic hydrocarbon; and η is in the range of 0 to 2 Integer; and [Formula 4] (Please read the precautions on the back before filling out this page) ---- 1 Order II ------ I-- · Fi stupid paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 200410055 A7 B7

此洗滌液進一步包含醇化合物。 在此’界面活性劑存在量範圍是整體洗滌液的約0.001 至約5重量％，較佳範圍是從0.3至5重量％。醇化合物 存在量範圍是整體洗滌液的0.01至1.0重量％，較佳範圍 是從1.7至10重量％。 當將低於0.001重量％的界面活性劑加入洗滌液時， 降低表面張力的效果會變差。當將超過5重量％的界面活 性劑加入洗滌液時，儘管用量增加，降低表面張力的效果 同樣會變差。此外，所使用之界面活性劑可能殘留而變成 晶圓上的沈積物。 當將低於0.01重量％的醇化合物加入洗滌液時，降低 表面張力的效果會變差。當將超過10重量％的醇化合物加 入洗滌液時，醇化合物本身會溶解光敏劑，因而使圖案塌 陷。 聚氧化烯化合物是不解離但溶於水的非離子型界面活 性劑，其在乳化、分散及滲透方面有優異的效果。此外， 聚氧化烯化合物因爲有較多的額外部分而具有較高的親水 性。然而，滲透作用、洗淨力、乳化分散力及發泡力等係 依用作底質的疏水部分種類而改變。 由於有優異的抗化學性，聚氧化烯化合物在酸性和鹼 ______ 9__ 贤夺纟氏張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------線· 200410055 A7 ___B7_ 五、發明說明（b ) 性溶液中都很穩定，而且在由酸、鹼和鹽所組成的水溶液 中具有優異的界面活性。 聚氧化烯化合物由於與陽離子型、陰離子型及其他非 離子型界面活性劑有良好的相容性，而且即使僅使用少量 的此化合物仍具有優異的發泡力，故而具有效益。由於上 述優點，聚氧化烯化合物常在諸如織物、造紙、農用藥品 、醫療供應品、樹膠、塗料、樹脂和金屬加工廠等工業中 被用作洗滌劑、滲透劑、濕潤劑、乳化分散劑、發泡劑及 消泡劑。 聚氧化烯化合物係選自於下列各物所組成的群組： 1) 聚氧乙烯烷基苯基醚； 2) 聚氧乙烯烷基醚； 3) 聚氧乙烯二醇脂肪酸酯； 4) 聚(氧丙烯-氧乙烯)嵌段共聚物； 5) 可用作消泡劑的聚氧化烯 6) 聚氧乙烯烷基胺醚；及 7) 聚氧化烯二醇單烷基醚·聚（氧丙烯-氧乙烯）二醇 的共聚物。 最好該聚氧乙烯烷基苯基醚係選自於聚氧乙烯壬基苯 基醚、聚氧乙烯辛基苯基醚及其組合所組成的群組。 最好該聚氧乙烯烷基醚係選自於聚氧乙烯月桂基醚、 聚氧乙烯油基醚、聚氧乙烯鯨蠟基醚、聚氧乙烯鯨蠘基硬 脂基醚、聚氧乙烯硬脂基醚、聚氧乙烯辛基醚、聚氧乙烯 十三基醚及其組合所組成的群組。 ___10 ___ 紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ϋ I n n I n^tfJ0 I I I— ! ϋ ϋ - 200410055 A7 ___B7__ 五、發明說明（Π ) 最好該聚氧乙烯二醇脂肪酸酯係選自於聚氧乙烯單月 桂酸酯、聚氧乙烯單油酸酯、聚氧乙烯單硬脂酸酯、聚氧 乙烯羊毛脂、聚氧乙烯蓖麻油及其組合所組成的群組。 最好該可用作消泡劑的聚氧化烯化合物係選自於聚氧 乙烯二醇共聚物、聚（氧乙烯-氧丙烯）二醇共聚物、聚烷基 醚、聚氧化烯三醇及其組合所組成的群組。 最好該聚氧乙烯烷基胺醚係選自於聚氧乙烯月桂基胺 醚和聚氧乙烯硬脂基胺醚及其組合所組成的群組。 式1之醇胺與含羧酸基之碳氫化合物（如脂肪酸）所 成的鹽和式1之醇胺與含磺酸基之碳氫化合物所成的鹽具 有優異的界面活性、相較於由鹼金屬鹽以外之金屬鹽所成 不溶性金屬皂爲低的pH及在中性環境的洗淨力和穩定性 ，因此由於在水和有機溶劑中的高溶解度而被用作淸潔劑 或乳化劑。 式1之醇胺，即乙醇胺，係選自於單乙醇胺、二乙醇 胺和三乙醇胺所組成的群組。 含羧酸基之碳氫化合物是C2-C5(H)的化合物。最好該含 羧酸基之碳氫化合物係選自於乙酸、二十四烷酸、亞油酸 、油酸、硬脂酸及其組合所組成的群組。 含擴酸基之碳氨化合物是C2-C500的化合物。最好該含 磺酸基之碳氫化合物係選自於木質素磺酸、甲烷磺酸、對 甲苯磺酸及其組合所組成的群組。 式2之聚乙二醇化合物包含一個親脂基（如具有長鏈 形式的伸烷基）和一個親水基（如分子中的羥基），因此 ______π__ 06杏紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁}This washing liquid further contains an alcohol compound. The ' surfactant is present in the range of about 0.001 to about 5% by weight of the overall washing solution, and preferably in the range of 0.3 to 5% by weight. The alcohol compound is present in an amount ranging from 0.01 to 1.0% by weight of the entire washing liquid, preferably from 1.7 to 10% by weight. When less than 0.001% by weight of a surfactant is added to the washing liquid, the effect of reducing the surface tension becomes poor. When more than 5% by weight of a surfactant is added to the washing liquid, the effect of lowering the surface tension becomes worse in spite of an increase in the amount. In addition, the surfactant used may remain and become a deposit on the wafer. When an alcohol compound of less than 0.01% by weight is added to the washing liquid, the effect of lowering the surface tension becomes worse. When more than 10% by weight of the alcohol compound is added to the washing liquid, the alcohol compound itself dissolves the photosensitizer, thereby causing the pattern to collapse. Polyoxyalkylene compounds are non-ionic surfactants that do not dissociate but are soluble in water, and have excellent effects on emulsification, dispersion, and penetration. In addition, the polyoxyalkylene compound has higher hydrophilicity because it has more extra portions. However, the osmotic effect, the detergency, the emulsifying and dispersing power, and the foaming power are changed depending on the type of the hydrophobic portion used as the substrate. Due to its excellent chemical resistance, polyoxyalkylene compounds are acidic and alkaline. ______ 9__ The size of Zhang ’s scale is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back first) (Fill in this page) -------- Order --------- line · 200410055 A7 ___B7_ V. Description of the invention (b) The solution is stable in acidic solution, and it is stable in acid, alkali and salt. The composition of the aqueous solution has excellent interfacial activity. Polyoxyalkylene compounds are effective because they have good compatibility with cationic, anionic, and other nonionic surfactants, and they have excellent foaming power even when only a small amount of this compound is used. Due to the above advantages, polyoxyalkylene compounds are often used as detergents, penetrants, wetting agents, emulsifying dispersants, Foaming agent and defoaming agent. The polyoxyalkylene compound is selected from the group consisting of: 1) polyoxyethylene alkylphenyl ether; 2) polyoxyethylene alkyl ether; 3) polyoxyethylene glycol fatty acid ester; 4) Poly (oxypropylene-oxyethylene) block copolymer; 5) polyoxyalkylenes useful as defoamers 6) polyoxyethylene alkylamine ethers; and 7) polyoxyalkylene glycol monoalkyl ethers · poly ( Copolymer of oxypropylene-oxyethylene) diol. Preferably, the polyoxyethylene alkylphenyl ether is selected from the group consisting of polyoxyethylene nonylphenyl ether, polyoxyethylene octylphenyl ether, and combinations thereof. Preferably, the polyoxyethylene alkyl ether is selected from the group consisting of polyoxyethylene lauryl ether, polyoxyethylene oleyl ether, polyoxyethylene cetyl ether, polyoxyethylene cetyl stearyl ether, and polyoxyethylene hard ether. A group consisting of fatty ether, polyoxyethylene octyl ether, polyoxyethylene tridecyl ether, and combinations thereof. ___10 ___ Paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the notes on the back before filling this page) ϋ I nn I n ^ tfJ0 III—! Ϋ 2004-200410055 A7 ___B7__ 5 Description of the invention (Π) Preferably, the polyoxyethylene glycol fatty acid ester is selected from polyoxyethylene monolaurate, polyoxyethylene monooleate, polyoxyethylene monostearate, and polyoxyethylene wool. Fat, polyoxyethylene castor oil, and combinations thereof. Preferably, the polyoxyalkylene compound useful as a defoaming agent is selected from the group consisting of polyoxyethylene glycol copolymer, poly (oxyethylene-oxypropylene) glycol copolymer, polyalkyl ether, polyoxyalkylene triol, and A group of its combinations. Preferably, the polyoxyethylene alkylamine ether is selected from the group consisting of polyoxyethylene laurylamine ether, polyoxyethylene stearylamine ether, and combinations thereof. The salt formed by an alcohol amine of formula 1 and a carboxylic acid group-containing hydrocarbon compound (such as a fatty acid) and the salt formed by an alcohol amine of formula 1 and a sulfonic acid group-containing hydrocarbon compound have excellent interfacial activity. Insoluble metal soaps made from metal salts other than alkali metal salts have low pH, detergency and stability in neutral environments, and are therefore used as detergents or emulsifiers due to their high solubility in water and organic solvents. Agent. The alcohol amine of formula 1, i.e. ethanolamine, is selected from the group consisting of monoethanolamine, diethanolamine and triethanolamine. The carboxylic acid group-containing hydrocarbon is a C2-C5 (H) compound. Preferably, the carboxylic acid group-containing hydrocarbon is selected from the group consisting of acetic acid, tetracosanoic acid, linoleic acid, oleic acid, stearic acid, and combinations thereof. Carboxylic acid compounds containing extended acid groups are C2-C500 compounds. Preferably, the sulfonic acid group-containing hydrocarbon is selected from the group consisting of ligninsulfonic acid, methanesulfonic acid, p-toluenesulfonic acid, and combinations thereof. The polyethylene glycol compound of Formula 2 contains a lipophilic group (such as an alkylene group having a long-chain form) and a hydrophilic group (such as a hydroxyl group in a molecule). Therefore, ______ π__ 06 Apricot paper scales are applicable to Chinese National Standards (CNS) A4 size (210 X 297 mm) (Please read the notes on the back before filling this page}

200410055 A7 ___B7_ 五、發明說明（f ) 可破壞表面張力。聚乙二醇對嘴唇或皮膚無害，因爲其具 有極小的毒性和刺激性。因此，聚乙二醇化合物適合作爲 界面活性劑。 此外’聚乙二醇化合物隨著平均分子量增加會從液態 轉換成固態，如糊狀物或蠟的形式。如果平均分子量再增 加，聚乙二醇化合物便會轉換成白色薄片相，其無論是液 態或固態皆可溶於水中。當以適當比例混合時，可製得具 有任意形式的聚乙二醇。 因此’聚乙二醇化合物可單獨使用或經由混合物使用 ，因爲這些化合物無論是具有低分子量的液態或具有高分 子量的固態都可溶於水中並相互混合。 式3之磺胺醯亞胺化合物對溶劑水的溶解度高於羧酸 基團，其係選自於磺醯胺、磺胺嘧啶、對胺基苯磺醯胺、 胺基磺酸、對胺基苯磺酸及磺胺水楊啡所組成的群組。在 此，除對胺基苯磺酸以外，這些化合物爲其中η是0的式 1磺胺醯胺化合物。 包含式4重複單元且具有分子量範圍從1〇〇〇至10000 的化合物係選自於葡萄糖、葡糖醛醯胺、葡糖醛酸、蔗糖 、乳糖、乳糖醇及其組合所組成的群組。 包含式4重複單元的化合物可溶於水中，且顯著地降 低水溶液的表面張力。這些化合物對嘴唇或皮膚無害，因 爲其具有極小的毒性和刺激性。因此，這些化合物被用作 降低表面張力的添加劑。 較佳而言，經聚醚變性之矽化合物具有範圍從1000至 ___12^__ 牟紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -I ϋ ϋ n I n 0 n ϋ ϋ I n «I ϋ I · 200410055 A7 _B7_ 五、發明說明（1 ) 10000的分子量。最好該經聚醚變性之矽化合物包含式5 之重複單元： [式5]200410055 A7 ___B7_ V. Description of the invention (f) Can damage the surface tension. Polyethylene glycol is not harmful to the lips or skin because it has minimal toxicity and irritation. Therefore, polyethylene glycol compounds are suitable as a surfactant. In addition, the 'polyethylene glycol compound changes from liquid to solid as the average molecular weight increases, such as in the form of a paste or wax. If the average molecular weight is increased, the polyethylene glycol compound will transform into a white flake phase, which is soluble in water, whether in liquid or solid state. When mixed in an appropriate ratio, polyethylene glycol having any form can be prepared. Therefore, the 'polyethylene glycol compounds can be used alone or as a mixture, because these compounds are soluble in water and mixed with each other, whether in a liquid state with a low molecular weight or a solid state with a high molecular weight. The sulfamethoxine compound of formula 3 has a higher solubility in solvent water than a carboxylic acid group, and is selected from the group consisting of sulfamethoxamine, sulfadiazine, p-aminobenzenesulfonamide, aminosulfonic acid, and p-aminobenzenesulfonic acid. A group of acids and sulfa salicine. Here, in addition to p-aminobenzenesulfonic acid, these compounds are sulfamidamide compounds of formula 1 in which n is 0. The compound comprising a repeating unit of formula 4 and having a molecular weight ranging from 1000 to 10,000 is selected from the group consisting of glucose, glucuronide, glucuronic acid, sucrose, lactose, lactitol, and combinations thereof. The compound containing the repeating unit of Formula 4 is soluble in water and significantly reduces the surface tension of the aqueous solution. These compounds are not harmful to the lips or skin because they have minimal toxicity and irritation. Therefore, these compounds are used as additives for reducing surface tension. Preferably, polyether-denatured silicon compounds have a range from 1000 to ___ 12 ^ __ Mo paper size applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the notes on the back before filling (This page) -I ϋ ϋ n I n 0 n ϋ ϋ I n «I ϋ I · 200410055 A7 _B7_ 5. Explanation of the invention (1) Molecular weight of 10,000. Preferably, the polyether-denatured silicon compound contains a repeating unit of Formula 5: [Formula 5]

Y ， 其中： X是ch3、C2-C5G()聚醚、醇或銨鹽； Y是Η、CH3、C2-C5G()聚醚、醇或銨鹽；及〇是範圍 從1至200的整數。 作爲實例而言，經聚醚變性之矽化合物係以式5a表示 [式 5a] _SiY, where: X is a ch3, C2-C5G () polyether, alcohol, or ammonium salt; Y is ytterbium, CH3, C2-C5G () polyether, alcohol, or ammonium salt; and 0 is an integer ranging from 1 to 200 . As an example, a polyether-denatured silicon compound is represented by Formula 5a [Formula 5a] _Si

—si-—Si-

xlsrI si· 其中： x是c2-c5()()聚醚、醇或銨鹽；及 P和q個別是範圍從1至100的整數。 在此，最好該X係選自於式6之聚醚、式7之醇和式 8a與8b之銨鹽所組成的群組： [式6] -(CH20)a(C2H40)b(C3H60)cR ； [式7] (請先閱讀背面之注意事項再填寫本頁)xlsrI si · where: x is a c2-c5 () () polyether, alcohol, or ammonium salt; and P and q are each an integer ranging from 1 to 100. Here, it is preferable that the X is selected from the group consisting of a polyether of Formula 6, an alcohol of Formula 7, and an ammonium salt of Formulas 8a and 8b: [Formula 6]-(CH20) a (C2H40) b (C3H60) cR ； [Formula 7] (Please read the notes on the back before filling in this page)

06体紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 200410055 A7 _____Β7____ 五、發明說明（丨。） -ch2(cr，2)oh ; (請先閱讀背面之注意事項再填寫本頁) [式 8a] -(CH2)dN+(R，’)2B ;及 [式 8b] N+(R，，)3B， 其中： R、R’和R”個別是氫或烷基；B是CH2CO〇 或鹵素； a、b和c個別是範圍從1至100的整數；及 d是範圍從1至10的整數； 式8 a的一個典型例子是-(012)3：^(013)20120)0_，而式 8b的一個典型例子是-N+(CH3)3Cr。 具有低分子量的經聚醚變性之矽化合物可顯著地降低 水溶液的表面張力且具有低的固化點。然而，因爲水溶液 的表面張力係受到pH影響，因此當超過降低表面張力的 最適pH値時，其活性可能降低。 醇化合物係選自於烷基醇、烷氧基醇及 其組合所組成的群組。最好該Cl-ClQ院基醇係選自於甲醇 、乙醇、丙醇、異丙醇、正丁醇、第二丁醇、第三丁醇、 1-戊醇、2-戊醇、3-戊醇、2,2-二甲基-1-丙醇及其組合所組 成的群組。 ______14 ____ 06^紙張尺度適用^國國家標準（CNS)A4規格（210 X 297公釐Γ" ' ' 200410055 A7 _____B7____ 五、發明說明（\υ 最好該烷氧基醇係選自於2-甲氧基乙醇、2-(2-甲氧基乙氧基）乙醇、1-甲氧基-2-丙醇、3-甲氧基-1，2-丙二 醇及其組合所組成的群組。 最好是使用蒸餾水作爲洗滌液的水。 本發明之洗滌液係藉由使醇化合物、水與界面活性劑 的混合溶液通過0·2μιη過濾器過濾而製得。 一種利用蝕刻與顯影程序來形成光阻劑圖案的方法包 括下列步驟： (a) 藉由將光阻劑塗覆於形成於半導體基材上之底層 上方部分來形成光阻劑膜； (b) 使該光阻劑膜曝光； (c) 利用顯影劑使該曝光的光阻劑膜顯影；及 (d) 使用本發明之洗滌液淸洗所得結構。 本方法進一步包括在(b)步驟之前進行軟烤（soft-bake )程序並在(b)步驟之後進行後烤（post-bake)的步驟。在 此，最好該烘烤程序係在範圍從70至200°C的溫度進行。 曝光程序(b)最好是使用選自於具有曝光能範圍從0.1 至 50 mJ/cm2 之 KrF ( 248nm)、ArF ( 193nm)、VUV ( 157nm)、EUV ( 13nm)、電子束、X射線及離子束所組 成群組之(b)步驟曝射光源來進行。 顯影程序(c)係使用鹼性顯影劑來進行，該顯影劑是範 圍從0.01至5重量％之氫氧化四甲基銨(TMAH)水溶液。 洗滌液在整個淸洗程序(d)中具有降低的表面張力，藉 此避免圖案在顯影程序期間的侵蝕。 ___15______ 麥紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝 訂- 200410055 A7 ___B7- ------ 五、發明說明（、、> ) 亦揭示利用本發明方法所製得的半導體裝置° 所揭示的洗滌液將參考下述實施例做更詳細’ 這些實施例並無意作限制解。 I .洗滌液的製備 實施例1 :洗滌液Π)的製備 將聚氧乙烯壬基苯基醚（1克）、異丙醇克）：^7jc (95克）攪拌1分鐘。使所得混合物經0·2μπι過 而獲得本發明的洗滌液。 實施例2 :洗條液m的製備 將聚氧乙烯月桂基醚（1克）、異丙醇（4克 95克）攪拌1分鐘。使所得混合物經0·2μπι過濾器過瀘、Μ 獲得本發明的洗滌液。 實施例3 :洗滌液(3)的製備 將聚氧乙烯單月桂酸酯（1克）、異丙醇（4克）與水 (95克）攪拌1分鐘。使所得混合物經0·2μιη過濾'器過濾 而獲得本發明的洗滌液。 實施别4 :洗滌液(4)的製備 將聚氧乙烯三醇（1克）、異丙醇（4克）與水（95 克）攪拌1分鐘。使所得混合物經〇·2μιη過滤窃過濾而獲 得本發明的洗滌液。 實施」例5 :洗滌液⑸的製備 將聚氧乙烯三醇（1克）、甲醇（4克）與水（95克 )攪拌1分鐘。使所得混合物經〇.2μιη過濾器過濾而獲得 _____ 16____—__ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) I I .1 ·ϋ ϋ 1— ϋ «ϋ n 一：0 Hi ϋ ϋ ϋ n an I * 200410055 A7 ___B7______ 五、發明說明（〇 ) 本發明的洗滌液。 眚施例6 :冼滌液(6)的製傲 將單乙醇胺-二十四烷酸（1 : 1莫耳％ )鹽（1克）、 異丙醇（4克）與水（95克）攪拌1分鐘。使所得混合物 經0·2μιη過濾器過濾而獲得本發明的洗滌液。 眚施例7 :洗滌液(7)的製備 將三乙醇胺_亞油酸（1 : 1莫耳％)鹽（1克）、乙醇 (4克）與水（95克）攪拌1分鐘。使所得混合物經 0.2μηι過濾器過濾而獲得本發明的洗滌液。 眚施例8 :洗滌液(8)的製備 將三乙醇胺-乙酸（1 : 1莫耳％)鹽（1克）、異丙醇 (4克）與水（95克）攪拌1分鐘。使所得混合物經 0.2μιη過濾器過濾而獲得本發明的洗滌液。 眚施例9 :洗滌液（9)的製備 將二乙醇胺-硬脂酸（1 : 1莫耳％ )鹽（1克）、1_戊 醇（4克）與水（95克）攪拌1分鐘。使所得混合物經 0.2μηι過濾器過濾而獲得本發明的洗滌液。 實施例10 :洗滌液（10)的製備 將三乙醇胺-油酸（1 : 1莫耳％)鹽（1克）、甲醇（ 4克）與水（95克）攪拌1分鐘。使所得混合物經〇·2μηι 過濾器過濾而獲得本發明的洗滌液。 眚施例11 :洗滌液（11)的製備 將單乙醇胺-木質素磺酸（1 : 1莫耳％ )鹽（1克）、 異丙醇（4克）與水（95克）攪拌1分鐘。使所得混合物 ________ 17_ 氏張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） '' (請先閱讀背面之注意事項再填寫本頁) 裝 200410055 A7 五、發明說明（A) 經〇.2μιη過濾器過濾而獲得本發明的洗滌液。 复施例12 :洗滌液Π2)的製備， 將三乙醇胺-甲烷磺酸（1 : 1莫耳％)鹽（1克）、乙 醇（4克）與水（95克）攪拌1分鐘。使所得混合物經 〇·2μιη過濾器過濾而獲得本發明的洗滌液。 實施例13 :洗滌液Π3)的製備 將三乙醇胺-對甲苯磺酸（1 : 1莫耳％)鹽（1克）、 異丙醇（4克）與水（95克）攪拌1分鐘。使所得混合物 經0.2μιη過濾器過濾而獲得本發明的洗滌液。 實施例14 :洗滌液Π4)的製傲 將二乙醇胺-木質素磺酸（1 : 1莫耳％)鹽（1克）、 1-戊醇（4克）與水（95克）攪拌1分鐘。使所得混合物 經0.2μπι過濾器過濾而獲得本發明的洗滌液。 實施例15 :洗滌、液Π5)的製備_ 將三乙醇胺-木質素磺酸（1 : 1莫耳％)鹽（1克）、 甲醇（4克）與水（95克）攪拌1分鐘。使所得混合物經 0.2μπι過濾器過濾而獲得本發明的洗滌液。 實施例:洗滌液（16)的製i 將數目平均分子量200之式2化合物（0.5克）、異丙 醇（4克）與水（95克）攪拌1分鐘。使所得混合物經 0.2μπι過濾器過濾而獲得本發明的洗滌液。 實施例11·· 1@'液（17)自勺 數目平均分子量1000之式2化合物（0·5克）、乙醇 (4克）與水（95克）攪拌1分鐘。使所得混合物經 __18____ ❹7¾氏張尺度適用47¾¾標準（CNS)A4規格（210 χ 297@ 一 (請先閱讀背面之注意事項再填寫本頁)The size of the 06 paper is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 200410055 A7 _____ Β7 ____ 5. Description of the invention (丨.) -Ch2 (cr, 2) oh; (Please read the precautions on the back before filling (This page) [Formula 8a]-(CH2) dN + (R, ') 2B; and [Formula 8b] N + (R ,,) 3B, where: R, R', and R "are each hydrogen or alkyl; B is CH2CO0 or halogen; a, b, and c are each an integer ranging from 1 to 100; and d is an integer ranging from 1 to 10; A typical example of Formula 8 a is-(012) 3: ^ (013) 20120 ) 0_, and a typical example of Formula 8b is -N + (CH3) 3Cr. Polyether-denatured silicon compounds with a low molecular weight can significantly reduce the surface tension of an aqueous solution and have a low solidification point. However, because the surface of the aqueous solution The tension system is affected by pH, so its activity may decrease when it exceeds the optimum pH for reducing the surface tension. The alcohol compound is selected from the group consisting of alkyl alcohols, alkoxy alcohols, and combinations thereof. Preferably the Cl -ClQ alkyl alcohol is selected from the group consisting of methanol, ethanol, propanol, isopropanol, n-butanol, second butanol, third butanol, 1-pentanol, 2- A group consisting of pentanol, 3-pentanol, 2,2-dimethyl-1-propanol, and combinations thereof. ______14 ____ 06 ^ Paper size applies ^ National Standard (CNS) A4 (210 X 297) Γ '" 200410055 A7 _____B7____ 5. Description of the invention (\ υ Preferably, the alkoxy alcohol is selected from 2-methoxyethanol, 2- (2-methoxyethoxy) ethanol, 1-methyl A group consisting of oxy-2-propanol, 3-methoxy-1,2-propanediol, and a combination thereof. Preferably, distilled water is used as the water of the washing liquid. The washing liquid of the present invention is made by using an alcohol compound A mixed solution of water, water and a surfactant is prepared by filtering through a 0.2 μm filter. A method for forming a photoresist pattern by using an etching and development process includes the following steps: (a) by coating the photoresist on A photoresist film is formed on a portion above the bottom layer on the semiconductor substrate; (b) exposing the photoresist film; (c) developing the exposed photoresist film with a developer; and (d) using the photoresist film. The obtained structure is rinsed by the washing liquid of the invention. The method further comprises performing a soft-bake procedure before step (b) and at step (b). Then, a post-bake step is performed. Here, it is preferable that the baking process is performed at a temperature ranging from 70 to 200 ° C. The exposure process (b) is preferably selected from a range having an exposure energy range. (B) Step (b) exposure light source for groups consisting of KrF (248nm), ArF (193nm), VUV (157nm), EUV (13nm), electron beam, X-ray and ion beam from 0.1 to 50 mJ / cm2 . The developing procedure (c) is performed using an alkaline developer, which is an aqueous solution of tetramethylammonium hydroxide (TMAH) ranging from 0.01 to 5% by weight. The washing liquid has a reduced surface tension throughout the cleaning process (d), thereby avoiding erosion of the pattern during the developing process. ___15______ Wheat paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) Binding-200410055 A7 ___ B7- ------ 5. Description of the invention ( (,, >) It is also disclosed that the semiconductor device prepared by the method of the present invention will be described in more detail with reference to the following examples. These examples are not intended to limit the solution. I. Preparation of washing solution Example 1: Preparation of washing solution II) Polyoxyethylene nonylphenyl ether (1 g), isopropyl alcohol g): ^ 7jc (95 g) was stirred for 1 minute. The resulting mixture was passed through 0.2 µm to obtain a washing liquid of the present invention. Example 2: Preparation of strip washing solution m Polyoxyethylene lauryl ether (1 g) and isopropanol (4 g 95 g) were stirred for 1 minute. The obtained mixture was filtered through a 0.2 μm filter, and the washing liquid of the present invention was obtained. Example 3: Preparation of washing solution (3) Polyoxyethylene monolaurate (1 g), isopropanol (4 g) and water (95 g) were stirred for 1 minute. The resulting mixture was filtered through a 0.2 µm filter to obtain a washing liquid of the present invention. Example 4: Preparation of Washing Solution (4) Polyoxyethylene triol (1 g), isopropanol (4 g), and water (95 g) were stirred for 1 minute. The resulting mixture was filtered through 0.2 µm to obtain the washing liquid of the present invention. Implementation Example 5: Preparation of washing liquid ⑸ Polyoxyethylene triol (1 g), methanol (4 g) and water (95 g) were stirred for 1 minute. The obtained mixture is filtered through a 0.2 μm filter to obtain _____ 16 ____—__ This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) II .1 · ϋ ϋ 1—ϋ «ϋ n 1: 0 Hi ϋ ϋ ϋ n an I * 200410055 A7 ___B7______ 5. Description of the invention (〇) The washing liquid of the present invention. Example 6: Preparation of Polyester Liquid (6) A monoethanolamine-tetracosanoic acid (1: 1 mole%) salt (1 g), isopropyl alcohol (4 g), and water (95 g) Stir for 1 minute. The obtained mixture was filtered through a 0.2 µm filter to obtain a washing liquid of the present invention. Example 7: Preparation of washing solution (7) Triethanolamine-linoleic acid (1: 1 mole%) salt (1 g), ethanol (4 g), and water (95 g) were stirred for 1 minute. The obtained mixture was filtered through a 0.2 µm filter to obtain a washing liquid of the present invention. Example 8: Preparation of washing solution (8) Triethanolamine-acetic acid (1: 1 mole%) salt (1 g), isopropanol (4 g), and water (95 g) were stirred for 1 minute. The obtained mixture was filtered through a 0.2 µm filter to obtain a washing liquid of the present invention. Example 9: Preparation of washing solution (9) Diethanolamine-stearic acid (1: 1 mole%) salt (1 g), 1-pentanol (4 g) and water (95 g) were stirred for 1 minute . The obtained mixture was filtered through a 0.2 µm filter to obtain a washing liquid of the present invention. Example 10: Preparation of washing solution (10) Triethanolamine-oleic acid (1: 1 mole%) salt (1 g), methanol (4 g) and water (95 g) were stirred for 1 minute. The obtained mixture was filtered through a 0.2 μm filter to obtain a washing solution of the present invention. Example 11: Preparation of washing liquid (11) Monoethanolamine-ligninsulfonic acid (1: 1 mole%) salt (1 g), isopropanol (4 g) and water (95 g) were stirred for 1 minute . Make the obtained mixture ________ 17_'s Zhang scale applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) '' (Please read the precautions on the back before filling this page) Installation 200410055 A7 V. Description of Invention (A) The washing liquid of the present invention was obtained by filtering through a 0.2 μm filter. Example 12: Preparation of washing solution II2), triethanolamine-methanesulfonic acid (1: 1 mole%) salt (1 g), ethanol (4 g) and water (95 g) were stirred for 1 minute. The obtained mixture was filtered through a 0.2 µm filter to obtain a washing solution of the present invention. Example 13: Preparation of washing solution III) Triethanolamine-p-toluenesulfonic acid (1: 1 mole%) salt (1 g), isopropanol (4 g) and water (95 g) were stirred for 1 minute. The obtained mixture was filtered through a 0.2 µm filter to obtain a washing liquid of the present invention. Example 14: Preparation of washing solution (4) The diethanolamine-ligninsulfonic acid (1: 1 mole%) salt (1 g), 1-pentanol (4 g) and water (95 g) were stirred for 1 minute . The obtained mixture was filtered through a 0.2 µm filter to obtain a washing liquid of the present invention. Example 15: Preparation of washing, liquid (5) __ Triethanolamine-ligninsulfonic acid (1: 1 mole%) salt (1 g), methanol (4 g) and water (95 g) were stirred for 1 minute. The obtained mixture was filtered through a 0.2 μm filter to obtain a washing liquid of the present invention. Example: Preparation of washing solution (16) The compound of formula 2 (0.5 g), isopropyl alcohol (4 g) and water (95 g) with a number average molecular weight of 200 was stirred for 1 minute. The obtained mixture was filtered through a 0.2 μm filter to obtain a washing liquid of the present invention. Example 11 ·· 1 @ '液 (17) Self-scooping The compound of formula 2 (0.5 g), ethanol (4 g), and water (95 g) were stirred for 1 minute. The resulting mixture is subjected to __18____ ¾7¾ scale standard for 47¾¾ standard (CNS) A4 specification (210 χ 297 @ 一 (please read the precautions on the back before filling this page)

200410055 A7 五、發明說明（J) 〇_2μηι過濾器過濾而獲得本發明的洗滌液。 實施例18 :冼滌液（1_8)_備_ 將四乙二醇（0.5克）、異丙醇（4克）與水（95克） 攪拌丨分鐘。使所得混合物經0.2μηι過濾器過濾而獲彳守本 發明的洗滌液。 實施例1Q :泎藤液Π9)的製備 將數目平均分子量1450之式2化合物（〇·5克）、^ 戊醇（4克）與水（95克）攪拌1分鐘。使所得混合物經 〇·2μηι過濾器過濾而獲得本發明的洗滌液。 實施例20 :冼滌液(20)的製備 將磺胺水楊畊（〇·5克）、異丙醇（4克）與水（95克 )攪拌1分鐘。使所得混合物經0·2μηι過濾器過濾、而獲^ 本發明的洗滌液。 實施例21 :洗滌液(21)的製備 將對胺基苯磺酸（〇·5克）、乙醇（4克）與水（95克 )攪拌1分鐘。使所得混合物經〇·2μπι過濾器過濾、而獲^ 本發明的洗滌液。 實施例22 :洗滌液(22)的製備 將胺基磺酸（0.5克）、異丙醇（4克）與水（95克） 攪拌1分鐘。使所得混合物經〇·2μηι過濾器過濾而獲得本 發明的洗滌液。 實施例23 :洗滌液(23)的製備 將對胺基苯磺醯胺（〇_5克）、1-戊醇（4克）與水（ 95克）攪拌1分鐘。使所得混合物經0·2μιη過濾器過濾、而 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------線· 07本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 200410055 A7 B7 五、發明說明（j ) 獲得本發明的洗滌液。 (請先閱讀背面之注意事項再填寫本頁) 眚施例24 :洗滌液(24)的製備 將葡萄糖（〇·5克）、異丙醇（4克）與水（95克）攪 拌1分鐘。使所得混合物經0.4m過濾器過濾而獲得本發 明的洗滌液。 眚施例25 :洗滌液（25)的製備 將葡糖醛酸（〇·5克）、乙醇（4克）與水（95克）攪 拌1分鐘。使所得混合物經0·2μιη過濾器過濾而獲得本發 明的洗滌液。 實施例26 :冼滌液(26)的製備 將乳糖（0.5克）、異丙醇（4克）與水（95克）攪拌 1分鐘。使所得混合物經〇·2μχη過濾器過濾而獲得本發明 的洗滌液。 實施例27 :洗滌液(27)的製傭 將乳糖醇（〇·5克）、1-戊醇（4克）與水（95克）攪 拌1分鐘。使所得混合物經〇·2μηι過濾器過濾而獲得本發 明的洗滌液。 實施例28 :洗滌液(28)的製備 將其中X是CH2CH2OCH2CH2OCH3之式5a化合物（1 克）、異丙醇（4克）與水（95克）攪拌1分鐘。使所得 混合物經〇.2μιη過濾器過濾而獲得本發明的洗滌液。 實施例29 :冼滌液(29)的製備 將其中X是CH2CH2OH之式5a化合物（1克）、乙 醇（4克）與水（95克）攪拌1分鐘。使所得混合物經 ______20__ y 紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 200410055 A7 五、發明說明（/)) 〇.2μιη過濾器過濾而獲得本發明的洗滌液。 實施例30 :冼滌液(30)的製傲 將其中X是(CH2)3N+(CH3)2CH2COO·之式5a化合物（ 1克）、異丙醇（4克）與水（95克）攪拌1分鐘。使所 得混合物經〇.2μηι過濾器過濾而獲得本發明的洗滌液。 實施例31 :冼滿液（31)的製備 將其中X是(CH2)3N+(CH3)2CH2COO·之式5a化合物（ 1克）、1-戊醇（4克）與水（95克）攪拌1分鐘。使所 得混合物經〇.2μηι過濾器過濾而獲得本發明的洗滌液。 Π.使用洗滌液形成圖案 實施例32 :光阳劑圖案Π)的形成 在經六甲基二矽烷基胺（HMDS)處理之矽晶圓上形 成底層之後，以3000 rpm將具有甲基丙烯酸酯型的光阻劑 AX1020P (由Cladant公司製造）旋塗於矽晶圓上以形成 光阻劑膜，並在約120°C軟烤約90秒。在軟烤之後，利用 AF雷射曝光器使光阻劑曝光，然後在約i2〇°C後烤約90 秒。當後烤完成時’使其在2.38重量％之氯氧化四甲基錶 水溶液中顯影30秒。在使矽晶圓旋轉的同時，藉由自旋轉 裝置噴淋30毫升在實施例1中所製得的洗滌液來淸洗矽晶 圓，然後乾燥，得到83nm線條式樣（見圖1)。 實施例33 :光限劑圖窭m的:^ 使用實施例2的洗滌液代替實施例丨的洗滌液重複實 施例32的步驟，得到90nm線條式樣的圖案（見圖2)。 ----- —_ 21 尺度適用中國國家標準（CNS)A4規格（210 X 297公髮) ----------------- (請先閱讀背面之注意事項再填寫本頁)200410055 A7 V. Description of the invention (J) 〇_2μηι filter to obtain the washing liquid of the present invention. Example 18: Polyester solution (1_8) _preparation__ Tetraethylene glycol (0.5 g), isopropanol (4 g) and water (95 g) were stirred for 丨 minutes. The resulting mixture was filtered through a 0.2 µm filter to obtain a washing solution in accordance with the present invention. Example 1Q: Preparation of hydrangea solution (9) A compound of formula 2 (0.5 g), pentyl alcohol (4 g) and water (95 g) were stirred for 1 minute. The obtained mixture was filtered through a 0.2 µm filter to obtain a washing solution of the present invention. Example 20: Preparation of mash solution (20) Sulfonamide (0.5 g), isopropanol (4 g), and water (95 g) were stirred for 1 minute. The obtained mixture was filtered through a 0.2 μm filter to obtain a washing solution of the present invention. Example 21: Preparation of washing solution (21) p-aminobenzenesulfonic acid (0.5 g), ethanol (4 g) and water (95 g) were stirred for 1 minute. The obtained mixture was filtered through a 0.2 μm filter to obtain a washing solution of the present invention. Example 22: Preparation of washing solution (22) Aminosulfonic acid (0.5 g), isopropanol (4 g) and water (95 g) were stirred for 1 minute. The obtained mixture was filtered through a 0.2 µm filter to obtain a washing solution of the present invention. Example 23: Preparation of washing solution (23) p-Aminosulfenilamide (0-5 g), 1-pentanol (4 g) and water (95 g) were stirred for 1 minute. The resulting mixture was filtered through a 0.2 micron filter, and (please read the precautions on the back before filling this page). -------- Order --------- line · 07 paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 200410055 A7 B7 V. Description of the invention (j) The washing liquid of the present invention is obtained. (Please read the precautions on the back before filling this page) 眚 Example 24: Preparation of washing solution (24) Stir glucose (0.5 g), isopropanol (4 g), and water (95 g) for 1 minute . The resulting mixture was filtered through a 0.4 m filter to obtain a washing liquid of the present invention. Example 25: Preparation of washing solution (25) Glucuronic acid (0.5 g), ethanol (4 g), and water (95 g) were stirred for 1 minute. The obtained mixture was filtered through a 0.2 µm filter to obtain a washing liquid of the present invention. Example 26: Preparation of mash solution (26) Lactose (0.5 g), isopropyl alcohol (4 g) and water (95 g) were stirred for 1 minute. The obtained mixture was filtered through a 0.2 µx? Filter to obtain a washing solution of the present invention. Example 27: Preparation of a washing solution (27) Lactitol (0.5 g), 1-pentanol (4 g) and water (95 g) were stirred for 1 minute. The resulting mixture was filtered through a 0.2 µm filter to obtain a washing solution of the present invention. Example 28: Preparation of a washing solution (28) A compound of formula 5a (1 g) where X is CH2CH2OCH2CH2OCH3, isopropanol (4 g), and water (95 g) were stirred for 1 minute. The obtained mixture was filtered through a 0.2 µm filter to obtain a washing liquid of the present invention. Example 29: Preparation of a polyester solution (29) A compound of formula 5a (1 g) in which X is CH2CH2OH, ethanol (4 g), and water (95 g) were stirred for 1 minute. The resulting mixture was filtered through ______20__ y paper size to Chinese National Standard (CNS) A4 (210 X 297 mm) 200410055 A7 V. Description of the invention (/)) 0.2 μm filter to obtain the washing liquid of the present invention. Example 30: Preparation of a polyester solution (30), where X is (CH2) 3N + (CH3) 2CH2COO, a compound of formula 5a (1 g), isopropanol (4 g), and water (95 g) were stirred for 1 minute. The obtained mixture was filtered through a 0.2 µm filter to obtain a washing liquid of the present invention. Example 31: Preparation of hydrazone solution (31) A compound of formula 5a (1 g), 1-pentanol (4 g), and water (95 g) were stirred in which X was (CH2) 3N + (CH3) 2CH2COO. 1 minute. The obtained mixture was filtered through a 0.2 µm filter to obtain a washing liquid of the present invention. Π. Forming a pattern using a washing liquid Example 32: Formation of a sunblock pattern Π) After forming a bottom layer on a silicon wafer treated with hexamethyldisilazylamine (HMDS), a methacrylate was formed at 3000 rpm Type photoresist AX1020P (manufactured by Cladant) was spin-coated on a silicon wafer to form a photoresist film, and soft-baked at about 120 ° C for about 90 seconds. After soft baking, the photoresist was exposed using an AF laser exposurer, and then baked for about 90 seconds at about 20 ° C. When the post-bake is completed ', it is developed in a 2.38% by weight chlorooxidized tetramethyl surface water solution for 30 seconds. While rotating the silicon wafer, the silicon wafer was rinsed by spraying 30 ml of the washing liquid prepared in Example 1 with a spin device, and then dried to obtain a line pattern of 83 nm (see Fig. 1). Example 33: Photo-limiting agent diagram 窭 m: ^ The washing solution of Example 2 was used instead of the washing solution of Example 丨 and the steps of Example 32 were repeated to obtain a 90nm line pattern (see Figure 2). ----- —_ 21 scales are applicable to China National Standard (CNS) A4 specifications (210 X 297). ----------------- (Please read the notes on the back first (Fill in this page again)

tT 200410055 A7 _B7_ 五、發明說明（θ ) 實施例34 :光阻劑圖案（3)的形成 使用實施例3的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到93nm線條式樣的圖案（見圖3)。 實施例35 :光阻劑圖案(4)的形成 使用實施例4的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到92nm線條式樣的圖案（見圖4)。 實施例36 :光咀劑圖案（5)的形成 使用實施例5的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到87mn線條式樣的圖案（見圖5)。 實施例37 :光阻劑圖案（6)的形成 使用實施例6的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到83mn線條式樣的圖案（見圖6)。 實施例38 :光阻劑圖案（7)的形成 使用實施例7的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到90nm線條式樣的圖案（見圖7 )。 實施例39 :光阻劑圖案（8)的形成 使用實施例8的冼滌液代替實施例1的洗滌液重複實 施例32的步驟，得到87nm線條式樣的圖案（見圖8)。 實施例40 :光阻劑圖案(9)的形成 使用實施例9的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到92nm線條式樣的圖案（見圖9)。 實施例41 :光阻劑圖案（10)的形成 使用實施例10的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到87mn線條式樣的圖案（見圖10)。 _22_ Θ74本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝--------訂---------線· 200410055 A7 _B7_ 五、發明說明（) 實施例42 :光阻劑圖案（11)的形成 ----------------- (請先閱讀背面之注意事項再填寫本頁) 使用實施例11的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到10〇nm線條式樣的圖案（見圖11) 〇 實施例43 :光阻劑圖案（12)Jj形成 使用實施例12的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到98nm線條式樣的圖案（見圖12)。 實施例44 :光阻劑圖案（13丨趙形成 使用實施例13的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到105nm線條式樣的圖案（見圖13) 〇 眚施例45 :光阻劑圖案 使用實施例I4的洗滌液代替實施例丨的洗滌液重複實 施例32的步驟，得到lOOnm線條式樣的圖案（見圖14) --線· 〇 實施例46 :光阻劑圖案 使用實施例I5的洗滌液代替實施例丨的洗滌液重複實 施例32的步驟，得到99nm線條式樣的圖案（見圖15)。 貫施例47 ·光阻劑圖案（16)的避 使用實施例I6的洗滌液代替實施例丨的洗滌液重複實 施例32的步驟，得到1〇〇11111線條式樣的圖案（見圖“和 17) ° 實施例48 =光阻劑圖案 使用貫施例Π的洗滌液代替實施例丨的洗滌液重複實 — 23 氏張尺度適用中國國家標準（CNS)A4規格（210 X 297 -- 200410055 A7 _B7_ 五、發明說明（产） 施例32的步驟，得到100nm線條式樣的圖案（見圖18) 〇 實施例49 :光阻劑圖案Π8)的形成 使用實施例18的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到lOOnm線條式樣的圖案（見圖19) 〇 實施例50 :光阻劑圖案Π9)的形成 使用實施例19的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到lOOnm線條式樣的圖案（見圖20) 〇 實施例51 :光阻劑圖案(20)的形成 使用實施例20的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到lOOnm線條式樣的圖案（見圖21 ) 〇 實施例52 :光阻劑圖案(21)的形成 使用實施例21的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到lOOnm線條式樣的圖案（見圖22) 〇 實施例53 :光阻劑圖案(22)的形成 使用實施例22的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到lOOnm線條式樣的圖案（見圖23) 〇 實施例54 :光阻劑圖案（23)的形成 使用實施例23的洗滌液代替實施例1的洗滌液重複實 _24_ Θ7泰紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------裝--- (請先閱讀背面之注意事項再填寫本頁) 訂： 200410055 A7 _B7_ 五、發明說明（—） 施例32的步驟，得到100nm線條式樣的圖案（見圖24) 〇 實施例55 :光阻劑圖案(24)的形成 使用實施例24的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到lOOnm線條式樣的圖案（見圖25和 26) 〇 實施例56 ·_光阻劑圖案（25)的形成 使用實施例25的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到lOOnm線條式樣的圖案（見圖27) 〇 實施例57 :光阻劑圖案(26)的形成 使用實施例26的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到lOOnm線條式樣的圖案（見圖28) 〇 實施例58 :光阻劑圖案（27)的形成 使用實施例27的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到lOOnm線條式樣的圖案（見圖29) 〇 實施例59 :光咀劑圖案（28)的形成 使用實施例28的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到lOOnm線條式樣的圖案（見圖30) 〇 實施例60 :光阻劑圖案(29)的形成 使用實施例29的洗滌液代替實施例1的洗滌液重複實 _25_ Θ7本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝 200410055 A7 ^__B7__ 五、發明說明（71) 施例32的步驟，得到100nm線條式樣的圖案（見圖31) 〇 實施例61 :光阻劑圖案(30^^开多成 使用實施例30的洗滌液代替實施例1的洗滌液重複實 施例32的步驟，得到lOOnm線條式樣的圖案（見圖32) 〇 眚施例62 :光阻劑圖案（311的形成 使用實施例31的洗滌液代替實施例丨的洗滌液重複實 施例32的步驟，得到lOOnm線條式樣的圖案（見圖33) 〇 比較實施例1 :光阻劑圖案的形成 使用蒸餾水代替根據本發明之洗滌液重複實施例32的 步驟來獲得光阻劑圖案。光阻劑圖案係受到侵蝕（見圖34 如先前所討論者，根據本揭示內容的去除光阻物質之 洗條液在淸洗半導體基材得到光阻劑圖案時，可避免圖案 的侵蝕’這是因爲本發明洗滌液具有比蒸餾水低的表面張 力。因此，本發明之洗滌液可穩定形成130nm以下超精細 光阻劑圖案的程序。 (請先閱讀背面之注意事項再填寫本頁)tT 200410055 A7 _B7_ V. Description of the invention (θ) Example 34: Formation of photoresist pattern (3) Use the cleaning solution of Example 3 instead of the cleaning solution of Example 1 to repeat the procedure of Example 32 to obtain a 93nm line pattern. Pattern (see Figure 3). Example 35: Formation of a photoresist pattern (4) Using the cleaning solution of Example 4 instead of the cleaning solution of Example 1, the procedure of Example 32 was repeated to obtain a 92nm line pattern (see Figure 4). Example 36: Formation of a light nozzle pattern (5) The procedure of Example 32 was repeated using the cleaning solution of Example 5 instead of the cleaning solution of Example 1, to obtain a 87mn line pattern (see Figure 5). Example 37: Formation of a photoresist pattern (6) Using the cleaning solution of Example 6 instead of the cleaning solution of Example 1, the procedure of Example 32 was repeated to obtain a 83mn line pattern (see Fig. 6). Example 38: Formation of a photoresist pattern (7) Using the cleaning solution of Example 7 instead of the cleaning solution of Example 1, the steps of Example 32 were repeated to obtain a 90nm line pattern (see Figure 7). Example 39: Formation of a photoresist pattern (8) Using the cleaning solution of Example 8 instead of the washing solution of Example 1, the procedure of Example 32 was repeated to obtain a pattern of 87 nm line patterns (see Fig. 8). Example 40: Formation of a photoresist pattern (9) Using the cleaning solution of Example 9 instead of the cleaning solution of Example 1, the procedure of Example 32 was repeated to obtain a 92 nm line pattern (see Figure 9). Example 41: Formation of a photoresist pattern (10) Using the washing liquid of Example 10 instead of the washing liquid of Example 1, the procedure of Example 32 was repeated to obtain a 87mn line pattern (see Fig. 10). _22_ Θ74 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) -Installation -------- Order ----- ---- Line · 200410055 A7 _B7_ V. Description of the Invention () Example 42: Formation of Photoresist Pattern (11) ----------------- (Please read the back first (Notes on this page, please fill in this page again) Use the washing liquid of Example 11 instead of the washing liquid of Example 1 and repeat the procedure of Example 32 to obtain a 100nm line pattern (see Figure 11). Example 43: Photoresist Pattern (12) Jj formation The washing liquid of Example 12 was used instead of the washing liquid of Example 1. The steps of Example 32 were repeated to obtain a 98 nm line pattern (see Figure 12). Example 44: Photoresist pattern (13 丨 Zhao Cheng uses the cleaning solution of Example 13 instead of the cleaning solution of Example 1 and repeats the procedure of Example 32 to obtain a 105nm line pattern (see Figure 13). Example 45 : Photoresist pattern Use the washing solution of Example I4 instead of the washing solution of Example 丨 and repeat the steps of Example 32 to obtain a 100nm line pattern (see Figure 14). Line 46. Example 46: Photoresist pattern The washing liquid of Example I5 was used instead of the washing liquid of Example 丨 and the steps of Example 32 were repeated to obtain a 99nm line pattern (see Figure 15). Example 47 · Avoiding Example of Photoresist Pattern (16) The washing liquid of I6 was used in place of the washing liquid of Example 丨 and the steps of Example 32 were repeated to obtain a 10011111 line pattern (see Figures "and 17"). Example 48 = Photoresist pattern washing using Example Π Liquid instead of the washing liquid of Example 丨 repeated practice — 23-square scale applies Chinese National Standard (CNS) A4 specification (210 X 297-200410055 A7 _B7_ V. Description of the invention (production) The steps of Example 32, 100nm line style Pattern (see Figure 18) Example 49: Formation of photoresist pattern (8) Using the washing solution of Example 18 instead of the washing solution of Example 1, the steps of Example 32 were repeated to obtain a 100 nm line pattern (see Figure 19). Example 50: Light Formation of the resist pattern (9) Using the washing solution of Example 19 instead of the washing solution of Example 1, the steps of Example 32 were repeated to obtain a 100 nm line pattern (see Figure 20). Example 51: Photoresist pattern (20 ) Formation Using the washing solution of Example 20 instead of the washing solution of Example 1, the steps of Example 32 were repeated to obtain a 100 nm line pattern (see Figure 21). Example 52: Formation and use of a photoresist pattern (21) The washing liquid of Example 21 was used in place of the washing liquid of Example 1. The steps of Example 32 were repeated to obtain a 100 nm line pattern (see Figure 22). Example 53: Formation of a photoresist pattern (22) Using Example 22 Washing liquid was used instead of the washing liquid of Example 1. The procedure of Example 32 was repeated to obtain a 100 nm line pattern (see Figure 23). Example 54: Formation of a photoresist pattern (23) The washing liquid of Example 23 was used instead of the implementation. The washing solution of Example 1 was repeated Real _24_ Θ7 Thai paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) -------------- install --- (Please read the precautions on the back before (Fill in this page) Order: 200410055 A7 _B7_ V. Description of the invention (—) The steps of Example 32 to obtain a 100nm line pattern (see Figure 24). Example 55: Formation of a photoresist pattern (24) Example of use The washing solution of 24 was used instead of the washing solution of Example 1. The procedure of Example 32 was repeated to obtain a 100 nm line pattern (see Figures 25 and 26). Example 56. Formation of Photoresist Pattern (25) Use Example 25 The washing solution of Example 1 was used instead of the washing solution of Example 1. The procedure of Example 32 was repeated to obtain a 100 nm line pattern (see Figure 27). Example 57: Formation of the photoresist pattern (26) Use the washing solution of Example 26 instead The washing solution of Example 1 was repeated with the procedure of Example 32 to obtain a 100 nm line pattern (see FIG. 28). Example 58: Formation of a photoresist pattern (27) Use the washing solution of Example 27 instead of the washing solution of Example 1. The procedure of Example 32 was repeated with the washing solution to obtain a 100 nm line pattern (see Figure 29). ) Example 59: Formation of a light nozzle pattern (28) Use the washing liquid of Example 28 instead of the washing liquid of Example 1 and repeat the steps of Example 32 to obtain a 100 nm line pattern (see Figure 30). Example 60: Formation of the photoresist pattern (29) Repeatedly using the washing liquid of Example 29 instead of the washing liquid of Example 1 _25_ Θ7 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ( Please read the precautions on the back before filling in this page) Installation 200410055 A7 ^ __ B7__ V. Description of the invention (71) The steps of Example 32 yield a 100nm line pattern (see Figure 31). Example 61: Photoresist pattern (30 ^^ Kaicheng uses the washing solution of Example 30 instead of the washing solution of Example 1 and repeats the steps of Example 32 to obtain a 100 nm line pattern (see Figure 32). Example 62: Photoresist pattern ( The formation of 311 uses the washing liquid of Example 31 instead of the washing liquid of Example 丨 and repeats the steps of Example 32 to obtain a 100 nm line pattern (see Figure 33). ○ Comparative Example 1: The formation of a photoresist pattern uses distilled water instead. Washing according to the invention The procedure of Example 32 was repeated to obtain a resist pattern. The photoresist pattern is eroded (see Figure 34. As previously discussed, the stripping solution for removing photoresist substances according to the present disclosure can avoid pattern erosion when the semiconductor substrate is washed to obtain the photoresist pattern. It is because the washing liquid of the present invention has a lower surface tension than distilled water. Therefore, the washing liquid of the present invention can stably form a procedure of superfine photoresist patterns below 130nm. (Please read the precautions on the back before filling this page)

1 ^本紙張尺度適用中國國家標準（CNS)A4規袼（210 X 297公釐）1 ^ This paper size is subject to Chinese National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

200410055 "A8 B8 C8 D8 、申請專利範圍 L一種去除光阻物質之洗滌液，其包含作爲主成分的 水（HW)及作爲添加劑的一或多種界面活性劑，該界面 活性劑係選自於聚氧化烯化合物、式1之醇胺與含羧酸（_ COOH)基團之碳氫化合物所成的鹽、式1之醇胺與含磺 酸（_S03H)基團之碳氫化合物所成的鹽、式2之聚乙二 醇化合物、式3化合物、包含式4重複單元且具有分子量 範圍從1000至10000之化合物及經聚醚變性之矽化合物所 組成的群組： [式1] HO (CH2), I A 其中 Ri和R2是氫、CVCh烷基和CrCio院基醇 /是範圍從1至10的整數； 及 ............……——........訂..........—^9. (請先閲讀背面之注意事項再塡寫本頁) [式2] HO ‘0 其中 m是範圍從1至500的整數；及 從62至20000的數目平均分子* 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐） 058 895 ABCD 200410055 六、申請專利範圍 / [式3] R 〇 ("At4—Rs 〆h ； 其中： R3和R4是氫、G-Cn烷基、芳基、不對稱酸酯（asin )、C1-C10胺基院基、胺基方基、殘酸基或擴酸基， r5是胺基、羥基、Q-Ck烷基、芳基、不對稱酸酯、 胺基烷基、胺基芳基、羧酸基或磺酸基； A是C1-C5伸院基或C3-C1。芳族碳氣化合物；及 η是範圍從0至2的整數；以及 [式4] (請先閲讀背面之注意事項再塡寫本頁)200410055 " A8 B8 C8 D8, patent application scope L A washing liquid for removing photoresist substances, which contains water (HW) as a main component and one or more surfactants as additives, the surfactant is selected from Polyoxyalkylene compounds, salts of alcohol amines of formula 1 and hydrocarbons containing carboxylic acid (_COOH) groups, compounds of alcohol amines of formula 1 and hydrocarbons containing sulfonic acid (_S03H) groups A group consisting of a salt, a polyethylene glycol compound of Formula 2, a compound of Formula 3, a compound containing a repeating unit of Formula 4, having a molecular weight ranging from 1000 to 10,000, and a polyether-denatured silicon compound: [Formula 1] HO ( CH2), IA where Ri and R2 are hydrogen, CVCh alkyl, and CrCio alkyl alcohol / is an integer ranging from 1 to 10; and ..................... .... Order .............— ^ 9. (Please read the notes on the back before writing this page) [Eq. 2] HO '0 where m is an integer ranging from 1 to 500 ; And the number average numerator from 62 to 20,000 * This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 058 895 ABCD 200410055 / [Formula 3] R 〇 (" At4—Rs 〆h; where: R3 and R4 are hydrogen, G-Cn alkyl, aryl, asymmetric acid ester (asin), C1-C10 amine group, amine R5 is amine, hydroxyl, Q-Ck alkyl, aryl, asymmetric acid ester, aminoalkyl, aminoaryl, carboxylic acid or sulfonic acid A is C1-C5 Shenyuanji or C3-C1. Aromatic carbon gas compounds; and η is an integer ranging from 0 to 2; and [Formula 4] (Please read the precautions on the back before writing this page) 2. 根據申請專利範圍第1項之洗滌液，其進一步包含 醇化合物。 3. 根據申請專利範圍第2項之洗滌液，其中界面活性 劑存在量範圍是整體洗滌液的0.001至5重量％，而醇化 合物存在量範圍是整體洗滌液的0.01至10重量％。 4. 根據申請專利範圍第3項之洗滌液，其中界面活性 劑存在量範圍是整體洗滌液的0.3至5重量％，而醇化合 物存在量範圍是整體洗滌液的1.7至10重量％。 2 :’本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐） 200410055 —__g_ 六、申請專利範圍 / 5·根據申請專利範圍第1項至第4項中任一項之洗滌 液’其中聚氧化烯化合物係選自於下列各物所組成的群組 1) 聚氧乙烯烷基苯基醚； 、 2) 聚氧乙烯烷基醚； 3) 聚氧乙烯二醇脂肪酸酯； 4) 聚(氧丙烯-氧乙烯)嵌段共聚物； 5) 可用作消泡劑的聚氧化烯 6) 聚氧乙烯烷基胺醚；及 Ό聚氧化烯二醇單烷基醚·聚（氧丙烯-氧乙烯）二醇 的共聚物。 6. 根據申請專利範圍第5項之洗滌液，其中（1)聚氧 乙烯烷基苯基醚係選自於聚氧乙烯壬基苯基酸、聚氧乙稀 辛基苯基醚及其組合所組成的群組。 # 7. 根據申請專利範圍第5項之洗滌液’其中（2)聚氧 乙烯院基醚係選自於聚氧乙烯月桂基酿、聚t 醜 、聚氧乙獅蠘基醚、魏乙賴_顧旨基醚^氧乙 烯硬脂基醚、聚氧乙烯辛基醚、聚氧乙煉十二基酸及其組 合所組成的群組。 8. 根據申旨轉利範mu 5項之洗、_ ’其中（3)㈣ Μ留后桂酸酯、聚氧乙 乙烯二醇脂肪酸酯係選自於聚氧乙烯单Θ ^ ^ 烯單油酸酯、聚氧乙烯單硬脂酸酯、聚氧乙煉羊毛1曰^ 氧乙烯蓖麻油及其組合所組成的群組° 9. 根據申請專讎圍第5項之洗滌液’ #ΐ(5) ^ 3 tL_____；____-— ---- j j紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公釐） ....................0^,…….........訂……-----------AW! (請先閲讀背面之注意事項再塡寫本頁) 200410055 ___g _ 六、申請專利範圍 / 作消泡劑的聚氧化烯化合物係選自於聚氧乙烯二醇共聚物 、聚（氧乙烯-氧丙烯）二醇共聚物、聚烷基醚、聚氧化烯二 醇及其組合所組成的群組。 10·根據申請專利範圍第5項之洗滌液，&其中(6)聚氧 乙烯烷基胺醚係選自於聚氧乙烯月桂基胺醚、聚氧乙烯硬 脂基胺醚及其組合所組成的群組。 Π.根據申請專利範圍第1項至第4項中任一項之洗滌 液，其中式1之醇胺係選自於單乙醇胺、二乙醇胺和三乙 醇胺所組成的群組。 12. 根據申請專利範圍第1項至第4項中任一項之洗滌 液，其中含羧酸基之碳氫化合物與含磺酸基之碳氫化合物 是的C2-C500化合物。 13. 根據申請專利範圍第12項之洗滌液，其中含羧酸 基之碳氫化合物係選自於乙酸、二十四烷酸、亞油酸、油 酸、硬脂酸及其組合所組成的群組。 14:根據申請專利範圍第12項之洗滌液’其中含磺酸 基之碳氫化合物係選自於木質素磺酸、甲院磺酸、對甲苯 磺酸及其組合所組成的群組。 15. 根據申請專利範圍第1項至第4項中任一項之洗滌 液，其中式3化合物係選自於磺醯胺 '擴胺嘧陡 '對胺基 苯石冓醯胺、胺基石黃· '黃酉戔黃月安7欠丰昜明1戶斤組 的群組。 16. 根據申請專利範圍第1項至第4項中任一項之洗滌 、液，#中包含式4重複單元之化合物係選自於葡萄糖、葡 4 :¾張尺度適用中國國冢^^NS)A4規格(210 x 297公爱) ---------------------0^------ (請先閱讀背面之注意事項再塡寫本頁) 訂 200410055 Β8 C8 D8 六、申請專利範圍 / 糖醛醯胺、葡糖醛酸、蔗糖、乳糖、乳糖醇及其組合所組 成的群組。 (請先閲讀背面之注意事項再塡寫本頁) 17. 根據申請專利範圍第1項至第4項中任一項之洗滌 液，其中經聚醚變性之矽化合物具有範圍從U)00至10000 的分子量。 18. 根據申請專利範圍第17項之洗滌液，其中經聚醚 變性之矽化合物包含式5之重複單元： [式5] ^-°)T Y 其中： X是CH3、c2-c500聚醚、醇或銨鹽； Y是Η、CH3、C2-C500聚醚、醇或銨鹽；及 〇是範圍從1至200的整數。 19. 根據申請專利範圍第1項至第4項中任一項之洗滌 液，其中經聚醚變性之矽化合物係以式5a表示： [式 5a] I ,1 w ! , ! I 1丨 rI 其中： X是C2_C5〇〇聚醜、醇或錶鹽；及 P和q個別是範圍從1至100的整數。 20. 根據申請專利範圍第19項之洗滌液，其中X係選 5 朱紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐） 200410055 098 8 95 ABCD 六、申請專利範圍 I 自於式6、7、8a和8b所組成的群組： [式6] (請先閱讀背面之注意事項再塡寫本頁) -(CH20)a(C2H40)b(C3H60)cR ； [式7] -CH2(CR，2)OH ; [式 8a] _(CH2)dN+(R’’)2B ;及 [式 8b] -N+(R，，)3B， 其中： R、R’和R”個別是氫或（VCwo烷基；B是CH2COO 或鹵素、 a、b和c個別是範圍從1至100的整數；及 d是範圍從1至10的整數。 21. 根據申請專利範圍第2項至第4項中任一項之洗滌 液，其中醇化合物係選自於烷基醇、Q-Ch烷氧基 醇及其組合。 22. 根據申請專利範圍第21項之洗滌液，其中the Cr C10烷基醇係選自於所組成的群組甲醇、乙醇、丙醇、異丙 醇、正丁醇、第二丁醇、第三丁醇、1-戊醇、2-戊醇、3- 6 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐） 200410055 A8B8C8D8 r 六、申請專利範圍 I 戊醇、2,2-二甲基-1-丙醇及其組合所組成的群組。 23.根據申請專利範圍第B項之洗滌液，其中Ci_Ci〇 院氧基醇係選自於2_甲氧基乙醇、2_(2_甲氧基乙氧基）乙醇 、1·甲氧基-2-丙醇、3-甲氧基a，丙二醇及其組合所組成 的群組。 24_根據申請專利範圍第丨項至第4項中任一項之洗滌 液’其中該洗滌液係選自於下列各物所組成的群組： 由聚氧乙烯壬基苯基醚、異丙醇與水所組成的化合物 ， 由聚氧乙烯月桂基醚、異丙醇與水所組成的化合物； 由聚氧乙烯單月桂酸酯、異丙醇與水所組成的化合物 由聚氧乙烯三醇、異丙醇與水所組成的化合物； 由聚氧乙烯三醇、甲醇與水所組成的化合物； 由單乙醇胺-二十四烷酸鹽、異丙醇與水所組成的化合 物；. 由三乙醇胺-亞油酸鹽、乙醇與水所組成的化合物； 由三乙醇胺-乙酸鹽、異丙醇與水所組成的化合物； 由二乙醇胺·硬脂酸鹽、1-戊醇與水所組成的化合物； 由三乙醇胺-油酸鹽、甲醇與水所組成的化合物； 由單乙醇胺-木質素磺酸鹽、異丙醇與水所組成的化合 物； 由三乙醇胺-甲烷磺酸鹽、乙醇與水所組成的化合物； 由三乙醇胺-對甲苯磺酸鹽、異丙醇與水所組成的化合 7 郎%%尺度適用t國國家標準(CNS)A4規格(210 X 297公爱） — .......................0^i..................訂..........................^9. (請先閲讀背面之注意事項再塡寫本頁) 200410055 B8 C8 D8 六、申請專利範圍 / 物； 由二乙醇胺-木質素磺酸鹽、1-戊醇與水所組成的化合 物； 由三乙醇肢-木質素磺酸鹽、甲醇與水所組成的化合物 ， 由具有數目平均分子量200之式2化合物、異丙醇與 水所組成的化合物； 由具有數目平均分子量1000之式2化合物、乙醇與水 所組成的化合物； 由四乙二醇、異丙醇與水所組成的化合物； 由具有數目平均分子量1450之式2化合物、1-戊醇與 水所組成的化合物； 由磺胺水楊啡、異丙醇與水所組成的化合物； 由對胺基苯磺酸、乙醇與水所組成的化合物； 由胺基磺酸、異丙醇與水所組成的化合物； 由對胺基苯磺醯胺、1-戊醇與水所組成的化合物； 由葡萄糖、異丙醇與水所組成的化合物； 由葡糖醛酸、乙醇與水所組成的化合物； 由乳糖、異丙醇與水所組成的化合物； 由乳糖醇、1-戊醇與水所組成的化合物； 由其中X是CH2CH2OCH2CH2OCH3之式5a化合物、 異丙醇與水所組成的化合物； 由其中X是CH2CH2OH之式5a化合物、乙醇與水所 組成的化合物； 8 義^纸張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) —................—........訂----------------^9. (請先閲讀背面之注意事項再塡寫本頁) A8B8C8D8 f 200410055 六、申請專利範圍 I 由其中X是(CH2)3N+(CH3)2CH2COCr之式5a化合物、 異丙醇與水所組成的化合物；及 由其中X是(CH2)3N+(CH3)2CH2COO·之式5a化合物、 1-戊醇與水所組成的化合物。 、 25. —種形成光阻劑圖案之方法，其包括下列步驟： (a) 藉由將光阻劑塗覆於形成於半導體基材上之底層 上方部分來形成光阻劑膜； (b) 使該光阻劑膜曝光； (c) 利用顯影劑使該曝光的光阻劑膜顯影；及 (d) 使用申請專利範圍第1項之洗滌液淸洗所得的結 構。 26. 根據申請專利範圍第25項之方法，其進一步包括 在(b)步驟之前進行軟烤程序並在(b)步驟之後進行後烤程序 的步驟。 27. 根據申請專利範圍第25項之方法，其中(b)步驟之 曝射光源係選自於KrF、ArF、VUV、EUV、電子束、x射 線和離子束所組成的群組。 28. —種利用申請專利範圍第25項之方法所製得的半 導體裝置。 9 Mb張尺度適用中國國冢標準(CNS)A4規格(210 X 297公釐) -----------------------------………訂................ (請先閲讀背面之注意事項再塡寫本頁)2. The washing liquid according to item 1 of the patent application scope, further comprising an alcohol compound. 3. The washing liquid according to item 2 of the patent application range, wherein the surfactant is present in an amount ranging from 0.001 to 5% by weight of the entire washing liquid, and the alcohol compound is present in an amount ranging from 0.01 to 10% by weight of the entire washing liquid. 4. The cleaning solution according to item 3 of the patent application, wherein the surfactant is present in an amount ranging from 0.3 to 5% by weight of the entire washing solution, and the alcohol compound is present in an amount ranging from 1.7 to 10% by weight of the entire washing solution. 2: 'This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210 X 297 mm) 200410055 —__ g_ 6. Scope of patent application / 5 · Washing according to any of items 1 to 4 of the scope of patent application Liquid 'wherein the polyoxyalkylene compound is selected from the group consisting of 1) polyoxyethylene alkylphenyl ether; 2) polyoxyethylene alkyl ether; 3) polyoxyethylene glycol fatty acid ester 4) poly (oxypropylene-oxyethylene) block copolymer; 5) polyoxyalkylenes that can be used as defoamers 6) polyoxyethylene alkylamine ethers; and polyoxyalkylene glycol monoalkyl ethers; Copolymer of poly (oxypropylene-oxyethylene) glycol. 6. The washing liquid according to item 5 of the scope of patent application, wherein (1) the polyoxyethylene alkylphenyl ether is selected from the group consisting of polyoxyethylene nonylphenyl acid, polyoxyethylene octylphenyl ether, and combinations thereof A group of people. # 7. The washing liquid according to item 5 of the scope of the patent application, where (2) the polyoxyethylene lauryl ether is selected from the group consisting of polyoxyethylene lauryl brewer, polyt ugly, polyoxyethyl lionyl ether, Wei Yilai _Guzhiyl ether ^ oxyethylene stearyl ether, polyoxyethylene octyl ether, polyoxyethyl succinic dodecanoic acid, and combinations thereof. 8. According to the purpose of the application, the washing of 5 items of mu, _ 'wherein (3) Μ after retention laurate, polyoxyethylene glycol fatty acid ester is selected from polyoxyethylene mono Θ ^ ^ ene mono oil Acid esters, polyoxyethylene monostearate, polyoxyethylated wool 1 ^ Group consisting of oxyethylene castor oil and combinations thereof 9. 9. According to the application, the cleaning solution for item 5 in the application is ## ( 5) ^ 3 tL_____; ____----- ---- jj paper size applies to China National Standard (CNS) A4 (210 χ 297 mm) .............. ..0 ^, …… ......... Order …… ----------- AW! (Please read the notes on the back before writing this page) 200410055 ___g _ VI The scope of the patent application / The polyoxyalkylene compound used as an antifoaming agent is selected from the group consisting of polyoxyethylene glycol copolymer, poly (oxyethylene-oxypropylene) glycol copolymer, polyalkyl ether, polyoxyalkylene glycol, and A group of its combinations. 10. The washing liquid according to item 5 of the scope of application for patents, wherein (6) polyoxyethylene alkylamine ether is selected from polyoxyethylene laurylamine ether, polyoxyethylene stearylamine ether, and combinations thereof Group of people. Π. The washing liquid according to any one of items 1 to 4 of the scope of the patent application, wherein the alcohol amine of formula 1 is selected from the group consisting of monoethanolamine, diethanolamine, and triethanolamine. 12. The washing liquid according to any one of claims 1 to 4 in the scope of the patent application, wherein the carboxylic acid group-containing hydrocarbon compound and the sulfonic acid group-containing hydrocarbon compound are C2-C500 compounds. 13. The washing liquid according to item 12 of the application, wherein the carboxylic acid group-containing hydrocarbon is selected from the group consisting of acetic acid, tetracosanoic acid, linoleic acid, oleic acid, stearic acid, and combinations thereof. Group. 14: The washing liquid according to item 12 of the scope of the patent application, wherein the sulfonic group-containing hydrocarbon is selected from the group consisting of ligninsulfonic acid, methylsulfonic acid, p-toluenesulfonic acid and combinations thereof. 15. The washing liquid according to any one of the items 1 to 4 of the scope of the patent application, wherein the compound of formula 3 is selected from the group consisting of sulfamethoxamine, dipyridamole, p-aminobenzidine, amine yellow · 'Huanghuang Huangyue'an 7's Fengfeng Ming's 1 household group. 16. According to the washing and liquid according to any one of the items 1 to 4 of the scope of the patent application, the compound containing the repeating unit of formula 4 in # is selected from glucose and glucose 4: ¾-sheet scale applies to China's national mound ^^ NS ) A4 size (210 x 297 public love) --------------------- 0 ^ ------ (Please read the notes on the back before writing This page) Order 200410055 B8 C8 D8 6. Scope of patent application / Group consisting of aldoxamine, glucuronic acid, sucrose, lactose, lactitol and combinations thereof. (Please read the precautions on the back before writing this page) 17. According to any one of the patent application scope items 1 to 4, the cleaning solution, in which the polyether-denatured silicon compound has a range from U) 00 to A molecular weight of 10,000. 18. The washing liquid according to item 17 of the scope of patent application, wherein the polyether-denatured silicon compound contains a repeating unit of formula 5: [Formula 5] ^-°) TY where: X is CH3, c2-c500 polyether, alcohol Or an ammonium salt; Y is a phosphonium, CH3, C2-C500 polyether, alcohol, or ammonium salt; and 0 is an integer ranging from 1 to 200. 19. The washing liquid according to any one of items 1 to 4 of the scope of the patent application, wherein the polyether-denatured silicon compound is represented by Formula 5a: [Formula 5a] I, 1 w!,! I 1r Where: X is a C2_C500 polymer, alcohol or surface salt; and P and q are each an integer ranging from 1 to 100. 20. Washing liquid according to item 19 of the scope of patent application, of which X series is selected 5 Zhu paper standard applicable to Chinese National Standard (CNS) A4 specification (210 X 297 mm) 200410055 098 8 95 ABCD VI. Application scope of patent I since Groups of formulas 6, 7, 8a, and 8b: [Formula 6] (Please read the precautions on the back before writing this page)-(CH20) a (C2H40) b (C3H60) cR; [Formula 7] -CH2 (CR, 2) OH; [Formula 8a] _ (CH2) dN + (R '') 2B; and [Formula 8b] -N + (R ,,) 3B, where: R, R ', and R "are each Hydrogen or (VCwo alkyl); B is CH2COO or halogen, a, b, and c are each an integer ranging from 1 to 100; and d is an integer ranging from 1 to 10. 21. According to claims 2 to 2, The washing liquid of any one of 4 items, wherein the alcohol compound is selected from the group consisting of an alkyl alcohol, Q-Ch alkoxy alcohol, and a combination thereof. 22. The washing liquid according to item 21 of the patent application scope, wherein the Cr C10 alkane The base alcohol is selected from the group consisting of methanol, ethanol, propanol, isopropanol, n-butanol, second butanol, third butanol, 1-pentanol, 2-pentanol, 3--6 Paper size applies Chinese national standard (C NS) A4 specification (210 X 297 mm) 200410055 A8B8C8D8 r Six. Patent application scope I Group consisting of pentanol, 2,2-dimethyl-1-propanol and combinations thereof. 23. According to the scope of patent application The washing liquid of item B, wherein Ci_Cio is an alcohol selected from 2-methoxyethanol, 2- (2-methoxyethoxy) ethanol, 1.methoxy-2-propanol, 3 -A group consisting of methoxy a, propylene glycol, and combinations thereof. 24_ The washing liquid according to any one of items 丨 to 4 of the scope of the patent application, wherein the washing liquid is selected from the following Group: compounds consisting of polyoxyethylene nonylphenyl ether, isopropanol and water, compounds consisting of polyoxyethylene lauryl ether, isopropanol and water; polyoxyethylene monolaurate Compound consisting of polyisoethylenetriol, isopropanol and water; Compound consisting of polyoxyethylenetriol, methanol and water Compounds of acid salts, isopropanol, and water; chemical compounds consisting of triethanolamine-linoleate, ethanol, and water Compounds; compounds consisting of triethanolamine-acetate, isopropanol, and water; compounds consisting of diethanolamine · stearate, 1-pentanol, and water; consisting of triethanolamine-oleate, methanol, and Compounds composed of water; Compounds composed of monoethanolamine-lignin sulfonate, isopropanol, and water; Compounds composed of triethanolamine-methanesulfonate, ethanol and water; Triethanolamine-p-toluenesulfonate The compound consisting of acid salt, isopropanol and water is worth 7%. The standard is applicable to the national standard (CNS) A4 specification (210 X 297 public love) — ............... ........ 0 ^ i ........ Order ... ... ^ 9. (Please read the precautions on the back before writing this page) 200410055 B8 C8 D8 6. Scope of patent application / substance; Diethanolamine-lignin sulfonate, 1-pentanol and A compound composed of water; a compound composed of triethanol limb-lignin sulfonate, methanol and water; a compound composed of a compound of formula 2 having a number average molecular weight of 200; isopropanol and water; Compound of formula 2 with a molecular weight of 1000 A compound composed of ethanol and water; a compound composed of tetraethylene glycol, isopropanol, and water; a compound composed of a compound of formula 2 having a number average molecular weight of 1,450, 1-pentanol, and water; Compounds consisting of brown, isopropyl alcohol and water; compounds consisting of p-aminobenzenesulfonic acid, ethanol and water; compounds consisting of aminosulfonic acid, isopropyl alcohol and water; compounds consisting of p-aminobenzenesulfonic acid Compounds consisting of fluoramine, 1-pentanol, and water; compounds consisting of glucose, isopropanol, and water; compounds consisting of glucuronic acid, ethanol, and water; compounds consisting of lactose, isopropanol, and water A compound composed of lactitol, 1-pentanol and water; a compound composed of formula 5a in which X is CH2CH2OCH2CH2OCH3, a compound composed of isopropyl alcohol and water; a compound of formula 5a in which X is CH2CH2OH, ethanol Compound with water; 8 meanings ^ Paper size applies to Chinese National Standard (CNS) A4 specifications (210 X 297 mm) —...—... ..... Order ---------------- ^ 9. (Please read the notes on the back first (Written on this page) A8B8C8D8 f 200410055 6. Scope of patent application I consists of a compound of formula 5a in which X is (CH2) 3N + (CH3) 2CH2COCr, a compound composed of isopropanol and water; and a compound in which X is (CH2) 3N + (CH3) 2CH2COO. A compound consisting of a compound of formula 5a, 1-pentanol and water. 25. A method for forming a photoresist pattern, comprising the following steps: (a) forming a photoresist film by coating the photoresist on a portion above a bottom layer formed on a semiconductor substrate; (b) The photoresist film is exposed; (c) the exposed photoresist film is developed with a developer; and (d) the structure obtained by washing with the cleaning solution in the first patent application scope. 26. The method according to item 25 of the scope of patent application, further comprising the steps of performing a soft-baking procedure before step (b) and performing a post-baking procedure after step (b). 27. The method according to item 25 of the application, wherein the exposure light source in step (b) is selected from the group consisting of KrF, ArF, VUV, EUV, electron beam, x-ray, and ion beam. 28. —Semiconductor device made by the method of the scope of application for patent No. 25. 9 Mb scale is applicable to China National Tomb Standard (CNS) A4 specification (210 X 297 mm) ----------------------------- ………… Order ...... (Please read the notes on the back before copying this page)
TW091135939A 2001-12-12 2002-12-12 Cleaning solution for removing photoresist and method of forming photoresist patterns TWI247199B (en)

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TWI502064B (en) * 2009-03-31 2015-10-01 Tokyo Ohka Kogyo Co Ltd A microfilm cleaning solution and a method of forming a photoresist pattern using the cleaning solution

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KR100469558B1 (en) * 2002-04-03 2005-02-02 동우 화인켐 주식회사 New cleansing solution comprising alcohol and ether for removing edge bead and cleansing method using the same
KR100682188B1 (en) 2003-11-25 2007-02-12 주식회사 하이닉스반도체 Cleaning Solution for Photoresist and Method for Forming Pattern Using the same
KR101957875B1 (en) * 2018-06-14 2019-03-13 영창케미칼 주식회사 Process liquid composition for extreme ultraviolet lithography and the method for forming pattern using the same
KR101957876B1 (en) * 2018-06-14 2019-03-13 영창케미칼 주식회사 Process liquid composition for extreme ultraviolet lithography and the method for forming pattern using the same
KR102100432B1 (en) * 2019-09-26 2020-05-15 영창케미칼 주식회사 Pross liquid composition for photolithography and pattern formation mehtod using the same

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KR100429455B1 (en) * 2001-06-11 2004-05-04 동우 화인켐 주식회사 Solution for removing photo-resist edge bead and method for the same therewith

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI502064B (en) * 2009-03-31 2015-10-01 Tokyo Ohka Kogyo Co Ltd A microfilm cleaning solution and a method of forming a photoresist pattern using the cleaning solution

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