TW200402859A - Elastic bump structure and its manufacturing method - Google Patents

Abstract

A kind of elastic bump structure and its manufacturing method for use in flip-chip package of electronic device are revealed in the present invention. The elastic bump structure is composed of polymer bump and metal layer, and is formed on the conductive contact of the electronic device surface. The polymer bump is provided with an upper surface, a lower surface and one or more than one side-face. The side-face is connected to the upper surface and the lower surface. The lower surface is stuck to the conducting contact. The metal layer covers the upper surface and extends from the side-face to the conducting contact so as to form a vertical electric connection. In addition, the side-face is not completely covered with the metal layer to isolate the lateral electric-conduction, so that short-circuit phenomenon in between contacts generated due to the collection of conductive particles of anisotropic conducting adhesive, fine line-width and fine pitch is blocked.

Description

200402859 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to an elastic bump structure and a manufacturing method thereof, and particularly to an elastic bump structure and a manufacturing method thereof applied to a flip-chip structure. [Previous technology] As electronic products move toward light, thin, short, small, high-speed, and high-performance development, Zhao Shi 'makes semiconductor component mounting technology requirements for increasing component reliability, density, and reducing component size. As the technology continues to increase, traditional wire bonding is gradually being replaced by flip-chip technology. The flip-chip mounting technology uses a bonding surface (^ ad) or a bump to form a bonding surface between the wafer and the substrate to replace the lead frame used in the conventional mounting technology. The circuit conduction is achieved by directly bonding the = bumps and bonding pads between the bonding surface of the wafer and the substrate, which can reduce the = sub-signal wheel distance between the wafer and the substrate, which is suitable for packaging high-speed electronic components. Conventionally, the crystal structure mounting method is to form bumps on the surface of the wafer and the substrate, and then apply a bonding agent to the surface of the substrate. Then, the bumps on the wafer and the substrate are aligned and pressed. In order to complete the flip-chip mounting structure, when the wafer and the i2 adhesive are bonded, because the two have severe thermal expansion, the thermal stress will easily make the crystal soil of the crystal society inverse when the temperature changes. The bump contact is deformed. Therefore, the content disclosed in the patent of the elastic conductive bump motherland No. 5 5 0 82 28 is developed. A high score is used to form a bump at the contact of the elastic element. The metal cladding layer is less ¥ electric bumps, thereby reducing the difference in thermal expansion coefficients of the contacts,

200402859 V. Description of the invention (2) Reducing the effects of thermal stress In addition, in order to reduce the difference between the adhesive and the Metopo and increase the strength of the contact, the thermal expansion coefficient of the particles can be filled with particles, and the filled particles can compensate the glue. Volume change due to an appropriate non-conducting dilatation coefficient difference: = Heat during heating: Point strength. And in the fine-pitch bonding sub = conductive crystal particles superimposed on the crystal structure 'to achieve anisotropy (addition of fine in / C: fine-pitch, in the case of fine-pitch, conductive particles straight / direction); Under the circumstances, it can produce the reverse side of the contact which can be applied. [Summary of the Invention]. The use of lines and spacing is limited. To solve the problems of structure and technology, the present invention provides a kind of bullet, which is applied to the flip-chip structure manufacturing process. ΪίϊBump junction table, the elastic bump structure provides vertical electrical faults. The electronic element structure is composed of polymer bumps and metal layers. The gold bumps of the elastic bump junctions are caused by different directions The conductive particles of the conductive conductive adhesive = designed to prevent short circuit caused by fine pitch. Laimu, thin line width The present invention discloses an elastic bump structure and a metal layer covered with a polymer bump to isolate conductive particles that are designed to directly block anisotropic conductive adhesives, 7 electrically conductive, particles: The short circuit phenomenon caused by aggregation. Its elasticity is equal to the number of conductive contacts on the surface of the conductive electronic element to provide the electrical connection between the external electronic components. This elasticity ::: the bottom surface of the substrate and the side that connects the two, its; the surface,-, the surface of the hair element $ 6,200,402,859 5. The conductive contact of the invention description (3), the contact forms a fully covered metal The shape of the layer can be a circle. The electronic element with this elastic width and fine pitch structure has a plurality of connections and also a plurality of bumps formed on the electronic element bumps and the metal layer pad. The lower surface is affixed to the side of one or one electrically connected block. And the other side is followed by this manufacturing method and then the light horse molecular surface and the sub-bump surface are extended to connect the unfinished conductive substrate and the outer surface. This is based on the lithography technology bump, the surface is pasted, and the metal to the conductive metal layer is straight Electricity, for the purpose of spacer and hexasex bumps. The element and the hybrid pad are composed of the surface of the conductive contact and are provided with a conductive full coating adhesive. The electronic element invented the above-mentioned technique in the electric device and has a conductive layer covering the conductive conductive coating on the connection, and the side thereof. The crystal structure of the body structure is used as the base point, and the metal layer of the side contact element on the side of the electrical contact is coated. Containing the elastic electron element sub-element, an upper surface electrical contact is formed on the upper surface point, wherein a directed electrical or other formed structure is an electrical contact with the guide on the board, the surface is connected, and the metal is extended to the conductive contact. The substrate is separated from the surface of the surface of the substrate-shaped bump piece by a surface, and the rear surface is slowly vertical, and the side of the polymer bump extending through the side is gas-conducted, and its high-dimensional three-dimensional shape. Flip-chip structure, which can be formed by the substrate, including the ammunition, and the electrical circuit of the substrate; the plurality of elastic convex elastic bump structures of the electronic element are covered with a layer on the surface of the substrate and covered with conductive contacts on the upper side of the upper surface. The electrical connection is highly insulated from the lateral electrical and electronic component connection structure and its flip-chip structure. A plurality of conductive conductive contacts are formed on the lower surface and the two are connected. One metal layer is covered by one or one. , The polymer to the conductive surface of the incomplete sub bumps into fine linear bumps on the surface piece surface block structure polymer bonding surface is then turned into a vertical molecular convex conduction, combined with the area of the system to make contacts; a plurality of the side on the high score Of the side bumps 〇

Page 7 200402859 V. Description of the invention (4) The side system is not completely covered with a metal layer to isolate the lateral bands of $, 曾, and 接着. The adhesive will complete the electronic elements of the elastic bump structure. Then a flip-chip structure is formed. First, soil anti-combination, in order to understand the purpose, structural characteristics and the invention of the present invention, the detailed description with the illustration is as follows:

The elastic bump structure disclosed in the present invention and the manufacturing method thereof are designed by the #elastic bump and the metal layer covered by it to prevent the electrical connection between the contacts from being misdirected, so as to solve the problem of fine line width and fine pitch. The short circuit problem that the crystal structure can accommodate. The elastic bump structure is composed of polymer bumps and metal that are easy to produce. With different processes and designs, the shape of the polymer bumps can be layered, hexahedral, or other three-dimensional shapes. The sides of the polymer bumps are The metal layer is completely rounded to isolate its lateral electrical conduction. Unfinished

In a preferred embodiment of the present invention, the plurality of electrical contacts on the surface of the electronic component form a plurality of elastic bump structures. Taking the hexahedron-shaped 1 ^ guide bump as an example, the metal layer coating of the polymer bump will be described. Please refer to FIG. 1A for a detailed description, which is a cross-sectional view of the first / embodiment of the present invention, which includes: a wafer, the surface of which has a plurality of conductive contacts ^ 111, and The surroundings are covered with a protective film 120; the conductive contacts 111 are attached to the elastic bump structure, and a vertical electrical connection is generated by the elastic bump structure. The elastic bump structure includes a lower metal layer, a polymer bump, a metal layer, and a metal layer. In order to prevent contact oxidation and increase the adhesion between the metal layer and the polymer insulation block, the metal layer consists of an adhesive metal. Layer 丨 丨 3 disk metal layer 114. The surface of the conductive contact Ul is sequentially attached with a lower metal layer

200402859 V. Description of the invention (5) 112, fluorene molecular bumps 110, adhesive metal layer 113 and metal layer 114, polymer bumps 110 are in the shape of a hexahedron, which has an upper surface, a lower surface and four sides. . The lower surface of the polymer bump is attached to the lower metal layer 112, the metal layer covers the upper surface and then extends to the conductive contact 11 1 through two opposite sides to form a vertical electrical connection, and the other two opposite sides The metal layer is not covered to isolate its lateral electrical continuity. Among them, when a plurality of elastic bumps are arranged, the metal layers overlying them are not adjacent to the adjacent blocks.

Please refer to FIG. 1B, which is a schematic perspective view of an elastic bump according to the first embodiment of the present invention. The characteristic point of the present invention lies in the design of the metal layer. The elastic bump structure includes a lower metal layer 112, a polymer bump 110, a metal layer U3, and a metal layer 114. As shown in FIG. 1B, the metal is adhered. The metal layer composed of the layer 1 metal layer 114 covers the two sides of the high-scoring block 110 in a bridged manner, and the other two opposite sides are not covered with the metal layer to isolate the lateral electrical conduction. Structure: t test: Figure 1C 'This is the elastic bump and ϊ = apparent intent of the second embodiment of the present invention. * Effectively prevents short circuit caused by anisotropic particles used in packaging, except for the adhesion of metal layers

Γ 堍; Γπ = 14 The metal layer composed of 14 covers the two sides of Gao Fangqiao in a bridging manner. The area covered by the metal layer can also be higher = 1 micron to 5 micron, its shrinkage It can be decided according to the arrival of the particles. In addition, with the same design, such as the first 3, the sides of the metal layer coating of the bump arrangement can be used as the two sides of the metal layer coating.

^ Page 9 200402859 V. Description of the invention (6) The two adjacent sides, or the metal layer is covered from the upper surface of the polymer bump to any three sides of the polymer bump, and extends to the conductive contact.

Please refer to FIG. 2A, which is a schematic cross-sectional structure diagram of a third embodiment of the present invention, which includes a wafer 100, the surface of which has a plurality of conductive contacts 111 ', and is sloped around the conductive contacts 111. Protective film 120. The surface of the conductive contact 111 is sequentially attached with the lower metal layer 11 2. The polymer bump 丨 丨 〇, the metal layer 11 3 and the metal layer 11 4. The polymer bump 110 is in the shape of two, which has ~ Upper surface, lower surface and four sides. The lower surface is attached to the lower metal layer 112, and the metal layer is coated on the upper blade. The knife bump extends from three sides to the conductive contact 11 1 to form a vertical surface and then is connected. One of the sides is not connected. The slope is covered with a metal layer to isolate the rabbits. Please refer to FIG. 2B for a schematic view of the electrical conduction of the third embodiment of the present invention. The elastic bump structure includes the following 6 bumps, high-molecular bumps, polymer bumps 110, and an adhesive metal layer 11 3 and a metal layer ^ 4 layer 11 2. The adhesive metal layer 113 and the metal layer 114 shown in FIG. Into eight. For example, Brother 1B is on the three sides of the polymer bump, and the other side is covered with a metal layer to isolate its lateral electrical conduction. Sloping metal

Please refer to FIG. 2C, which is a schematic perspective view of a fourth embodiment of the present invention. In the area covered by the metal layer, the edge of the sexual bump junction shrinks by 1 micrometer to 5 micrometers.乂 A molecular bump The present invention can determine the situation of the metal layer being covered according to different protrusions on the surface of the electronic component.歹] and design, please refer to Figure 3, which is a wafer with double rows of bumps. 200402859 V. Description of the invention (7) The double rows of bumps can be formed in a staggered arrangement on the surface of the wafer. Designed to isolate the lateral electrical continuity of its abutting faces. Please refer to FIG. 3A, which is a schematic oblique view of a dual-row elastic bump structure according to a fifth embodiment of the present invention. The elastic bump structure includes a lower metal layer 112, a polymer bump 110, an adhesive metal layer 113, and a metal layer. 114, as shown in FIG. 3A, the metal layer composed of the adhesive metal layer 113 and the metal layer 114 covers one side of the polymer bump 110, and the side covered by the metal layer does not adjoin other bumps, but adjoins other bumps. The three sides of the block are not covered with a metal layer to isolate their lateral electrical conduction. Please refer to FIG. 3B, which is a schematic perspective view of a double-row elastic bump structure according to a sixth embodiment of the present invention. The metal layer composed of the adhesive metal layer 11 3 and the metal layer 11 4 covers both sides of the polymer bump 110, and the bump is adjacent to another bump with the side not covered with the metal layer. The edges of the higher molecular bumps 110 covered in the covered area shrink within 1 micrometer to 5 micrometers. Please refer to FIG. 3C, which is a schematic perspective view of a double-row elastic bump structure according to a seventh embodiment of the present invention. The metal layer composed of the adhesive metal layer 11 3 and the metal layer 11 4 covers one side of the polymer bump 110, and the area covered by the metal layer is higher than the edge of the molecular bump 110 by 1 micrometer to 5 Microns. Please refer to FIG. 4, which is a manufacturing flow chart of an embodiment of the present invention. First, a plurality of conductive contacts are formed on the surface of the wafer (step 3 10); second, a protective film is formed on the surface of the wafer and the conductive contact area is exposed ( Step 3 2 0); forming a lower metal layer on the surface of the conductive contact (step 3 3 0); using photolithography to form a plurality of polymer bumps in the shape of a hexahedron on the conductive contact on the surface of the wafer (step 340 ), The polymer bump has an upper surface, a lower surface and

Page 11 200402859 V. Description of the invention (8) Four sides, 1 covering-adhesive metal core f attached to the metal layer above and below the conductive contact; covered with polymer bumps, core knife bumps, step 35)) · Cover a metal layer with a metal layer and a metal layer, then: Synoptic lithography technology etches and adheres to vertical electrical conductivity and then extends to the side of the conductive contacts through the sides. Each side slope covers eight; ^ According to different designs, one to two of the polymer bumps are electrically connected laterally. Covering the mongolian layer to isolate it In addition, in accordance with the manufacturing method of the present invention, a polymer protective layer and a grounded metal component mechanism are fabricated. For the test of the yield of ant noise common contact, please refer to FIG. 5A, which is an elevation view of the eighth implementation of the present invention. The wafer 100 has a plurality of conductive contacts on its surface. Cover with protective film! 2 0. Conductive connection, sub-, 4-pack structure, including lower metal layer 112, high score and metal layer m, of which the adhesive metal layer 113 and the metal layer are extended: to the protective film 120, which can be directly used as the contact yield The testing organization avoids the problem of the alignment of the test probe and the bump during the yield test of the contact, which can reduce the material of the probe for the bump. ㈣Metal layer⑴ and the metal layer = 4 extend the contact yield test mechanism to complete the elastic bump green structure = zhong together, and in the step of making the polymer bump 110, ::: Crystal: 10. A south molecular protective layer 14 is formed on the surface to protect other circuits and surface electronic components. Please refer to FIG. 5B, which is a schematic cross-sectional view of a ninth embodiment of the present invention.

200402859 V. Description of the invention (9) Figure ‘I’ also adds a ground metal shielding layer on the surface of the electronic component to prevent electromagnetic interference and other effects. As shown in FIG. 5A, the polymer protective layer 14 is a covering layer 130. First, a metal layer 112 is made on the surface of the conductive contact ui, and the gate is only used as the metal shielding layer 130, and is grounded to the substrate. When the conductive pad is connected, the molecular protective layer 140 is formed on the surface of the wafer 1000 when the polymer bump η is formed. Among them, the polymer bumps with high differences made at the same time and using the same photomask and the polymer protective layer 140 can be exposed to the positive photosensitive polymer layer through photomasks with different transmittance regions, and then Perform one development to complete. 2. The flip-chip structure formed by applying the elastic bump structure of the present invention can achieve the purposes of fine line width and fine pitch. Fig. 6 of the tea rental test is a schematic structural view of a first application example of the present invention. The flip-chip structure is formed by a substrate 2000, a crystal including an elastic bump structure "sheet 100", and an anisotropic conductive adhesive 22 0, and the anisotropic conductive film 22 contains conductive particles 221, The surface of the substrate 2000 has a plurality of contacts / pads 2 which have been used as the conductive circuit of the substrate 2000; the surface of the wafer 100 has a plurality of = contacts 111. As described above, the plurality of elastic bump structures are formed on the conductive contacts ln on the surface of the wafer 100 and are pressed to the plurality of joints for electrical conduction. The upper surface of the polymer bump 110 is bonded to the bonding pad 210 on the 7th surface of the substrate 200, and the lower surface is bonded to the conductive contact ⑴. A metal layer composed of an adhesive metal layer and a U-based layer U4 is overlaid on top of each other. The surface is extended to the conducting contact through two or more sides to form a vertical electrical connection, so as to provide the electrical connection between the wafer 100 and the substrate 2000. Lane 2, chief, and coating agent 220 are coated on the bonding area between the substrate 200 and the wafer 100 for electrical connection.

Page 13 200402859 V. Description of the invention (10) _ 2 The side of the polymer bump 110 is not completely structured. The side is not covered with a metal layer. Let ’s set another bump to isolate the side-on-chip structure manufacturing method, please refer to the figure of YID, YID, Gudi 7 ′, which is the number of bonding pads of the present invention as the substrate ^ substrate, The surface formation provides a sΗ, 矣 矣 electric circuit (step 410); secondly, the block (step 420), the elastic bump is formed by points, and the elastic bump has-an upper surface,-a lower ΛυΛ block and a metal layer. Form,; cover the upper surface and then pass through the side: extend to conduction; Ϊ = system connection, the side of the polymer bump is incomplete = vertical electrical insulation of its lateral electrical conduction. After that, it was covered with five genus layers with = 43. ); Then, the conductive convex cloth: square :: wool is bonded (step 440), so that the elastic bump: a bonding pad of a person, and a lower surface is pasted by a human guide interface to the substrate surface and the board is electrically connected. The most excellent ^ ^ to provide electronic components and substrates and substrates (step Lai), that is to form a flip-chip structure of the adhesive element, the adhesive used in the present invention can be selected from conductive adhesive, electronic conductive adhesive or non It can be selected from the organic beauty board, Tao Shi # day display device driver chip, substrate substrate bit surface: glass substrate, Shi Xi substrate, metal substrate with an emulsified layer on the surface of the deified gallium soil. Dong Ming: = ::; = 上: Do not talk about :: It is not used within the spirit and scope, it can be made a little bit more ^: No

Page 14 ^ ·; 200402859

Page 15 200402859 Brief description of the drawings. Figure 1 is a top view of a wafer with a single row of bumps. Figure 1 A is a schematic cross-sectional structure diagram of the first embodiment of the present invention. Figure 1 B is a diagram of the first embodiment of the present invention. The oblique view of the elastic bump structure is a schematic illustration of the oblique structure of the convex block TJcaL. The second embodiment is shown in the figure; C f JJ, ΙΠΊ of the sexual bombardment Shi Shishi San San ^ Di Mingfa issued the book as a picture; AB 2 2 Figure ^ Xindi intended to be seen obliquely. Examples of building a convex crtuL Example 4 Figure 2 shows the picture; C 2 shows the example of the oblique agglomeration convexity tTcuu IF double. Example 5 The picture shows the picture A 3 Figure Λ- / Γ from the picture of the younger brother The block convex hr double is an example of an oblique block convex convex Ltr double. The sixth embodiment is shown in the figure; B 3 is an example of the oblique block convex convexity σ & ρ hr double. Shi Shi Seventh Mingfa is a picture; G 3 is from Oxfam Shiming Figures; 4 Figures, Figures, Figures, and Flow Charts are intended to show the structure of the structure JnJ, JnJ. The example application should be-the first Mingfa version is a diagram and the flow chart of the example application should be used. The 1st Mingfa version is a pictorial symbol. Page 16 200402859 The diagram is a simple explanation. 100 chip 110 polymer bump 111 conductive contact 112 Lower metal layer 113 Adhesive metal layer 114 Metal layer 120 Protective film 130 Ground metal shielding layer 140 Polymer protective layer 200 Substrate 210 Bonding pad 220 Anisotropic conductive adhesive 221 Conductive particles Step 3 1 0 Step 3 2 0 Domain step 3 3 0 Step 3 4 0 Hexahedron Step 3 5 0 Step 3 6 0 Step 3 7 0 Step 4 1 0 Form a plurality of conductive contacts on the surface of the wafer as a substrate to form a protective film on the surface of the wafer and expose the conductive contact area_ 于The lower metal layer is formed on the surface of the conductive contact. A plurality of polymer bumps shaped on the conductive contacts on the wafer surface by photolithography are coated with an adhesive metal layer on the polymer bump. Coating a metal layer with a polymer bump photolithography etching adhesive metal layer and the metal layer providing a substrate having a surface to form a plurality of conductive traces engagement Sook

Page 17 200402859 Brief description of the diagram Step 42 0 Provide a wafer with a plurality of conductive contacts on the surface to form a plurality of elastic bumps Step 43 0 Apply an anisotropic conductive adhesive on the surface of the substrate Step 440 Make the conductive bumps pair Step of quasi-pressing the bonding pad on the substrate surface 4 5 0 Curing the anisotropic conductive adhesive to bond the component to the substrate

Page 18

Claims (1)

200402859 VI. Scope of patent application 1. An elastic convex contact forms an electrical bump of a complex electronic component and a gold surface and the surface and the lower layer are covered at a point 'to form a layer to isolate 2. If a molecular bump is applied for patent One of them. The block structure is connected to a bump of an electronic component and an upper surface of a polymer, and the upper point is connected to the upper point. The metal is connected to the conductive slope and covered with the metal, wherein the high pillar and the cone have a plurality of bumps. The element is transparent :: a plurality of conductive connections, characterized in that the bump: is formed by a metal layer, the polymer bump has one or more side surfaces, and the side surface 'the lower surface is attached to the conductive surface The upper surface is connected to the vertical electrical connection through the side surface, and the side surface is not completely electrically conductive in the lateral direction. The elastic bump structure described in the first item of the scope is a cylinder, a hexahedron, and a polygon 3. The elastic bump structure described in the first item of the patent application scope, wherein the shape of the polymer bump is six The shape of a cuboid has the upper surface, the lower surface and four sides. 4. The elastic bump structure according to item 3 of the scope of the patent application, wherein the metal layer is covered from the upper surface of the polymer bump to two opposite sides of the polymer bump and extends to The conductive contact is conducted, and the metal layer is not adjacent to other adjacent bumps. 5. The elastic bump structure according to item 3 of the scope of the patent application, wherein the metal layer is extended from the upper surface of the polymer bump to two adjacent sides of the polymer bump. To turn on the conductive contact. 6. The elastic bump structure according to item 3 of the scope of the patent application, wherein the metal layer is covered by the upper surface slope of the high score + bump to the polymer bump 200402859 VI. One of the four sides of the patent application scope extends to the conductive contact. The elastic bump structure according to item 3 of the scope of the patent application, wherein the metal is covered by the upper surface of the interstitial molecular bump to any of the two sides of the polymer bump, and extends to conduct the conduction contact. 8. The elastic bump structure according to item 1 of the scope of the patent application, wherein the area covered by the metal layer is within 5 micrometers to 5 micrometers smaller than the edge of the polymer bump. 9. According to the elastic bump structure described in item 丨 of the scope of patent application, the metal layer is formed by an adhesive metal layer and a metal layer covering the metal layer. 10. The elastic bump structure described in item 丨 of the patent application scope, wherein the lower surface of the polymer bump has a lower metal layer to fit the conductive contacts of the electronic component. U. The elastic bump structure described in item 丨 of the patent application range, wherein the electronic element further includes a polymer protective layer. i 2. The elastic bump structure according to item 1 of the scope of the patent application, wherein the electronic element further includes a polymer protective layer and a ground metal shielding layer, and the ground metal shielding layer covers the surface of the electronic component. A protective film, f, is connected to the ground bonding pad of the substrate, and the polymer protective layer covers the ground metal shielding layer. i 3. The elastic bump structure as described in item 1 of the scope of the patent application, and the metal layer extends beyond the surface of the electronic component to the structure. Test for forming contacts 丄 4. A method for manufacturing an elastic bump structure, the steps include: forming a plurality of conductive contacts on the surface of an electronic component. 200402859 On the conductive contact on the surface of the electronic element, the polymer bump has an upper surface and a lower surface and one or more side surfaces, and the side surface is connected to the lower surface and attached to the conductive contact layer to form a vertical contact. The steps of manufacturing the hexahedron and the manufacturing side of the entire slope are covered with the shape of the electrical structure of the opposite and conductive polymer extending to the bump, the layer described in the above-mentioned layer. The shape is a side surface. To the high side surface, the scope of the patent application is to use photolithography technology to form a plurality of polymer bumps on the upper surface and the lower surface point; and cover a metal layer on the surface. The surface is directly and electrically connected through the side surface, and the polymer metal layer is used to isolate the lateral direction. 1 5. According to the method of claim 14 of the patent application scope, wherein the polymer convex polygonal column and the cone are 1 6. For example, the 14th method of the scope of patent application, wherein the metal surface of the polymer bump, the lower surface and the upper surface of the four insulating blocks are covered with a point that is not adjacent to the adjacent bump. . 17. According to the method of claim 14 in the scope of patent application, the shape of the metal polymer bump is the lower surface and the four sides, the upper surface of the block is covered to the bump, and the metal is turned on. The conductive connection to the side is not completely conducted. The “elastic convex” structure is a hexahedron in the shape of a cylinder and a high-molecular insulating block having an elastic bump structure, and the metal layer extends from two of the molecular bumps to a manufacturing square layer that conducts the elastic bump structure described above. Molecular bump step, the hexahedron shape, which has the upper surface, wherein the metal layer is formed by two adjacent sides of the polymer bump south molecular bump Page 21 200402859 6. The scope of patent application is extended to conduct the conductive contact. 1 8. The method for manufacturing an elastic bump structure as described in item 14 of the scope of patent application, wherein the step of covering the polymer bump with a metal layer, the shape of the polymer bump is a hexahedron. It has the upper surface, the lower surface and four sides. The metal layer is covered from the upper surface of the polymer bump to one of the four sides of the polymer bump, and extends to the conduction. The conductive contact. 19. The method for manufacturing an elastic bump structure according to item 14 of the scope of the patent application, wherein in the step of covering a polymer layer with the polymer bump, the shape of the polymer bump is a hexahedron shape. It has the upper surface, the lower surface, and four sides. The metal layer is covered by the upper surface of the polymer bump to any three of the sides of the polymer bump, and extends to conduct electricity. contact. 2 0. The method for manufacturing an elastic bump structure and structure as described in item 14 of the scope of the patent application, wherein the step of covering the metal bump on the polymer bump by the slope, the area covered by the metal layer is relatively small. The edges of the polymer bumps shrink within 1 micrometer to 5 micrometers. 2 1. The method for manufacturing an elastic bump structure according to item 14 of the scope of patent application, wherein the step of covering the slope with a metal layer on the polymer bump is covered by an adhesive metal layer Consisting of a metal layer. 2 2. The method for manufacturing an elastic bump structure according to item 14 of the scope of patent application, wherein the step of forming a plurality of polymer bumps on the conductive contact on the surface of the electronic component by photolithography technology, The polymer bump is formed by photolithography technology, and is simultaneously formed on the surface of the electronic component Page 22 200402859 6. Scope of patent application A polymer protective layer. 2 3. The manufacturing method of the elastic bump structure according to item 22 of the scope of the patent application, wherein the height difference between the polymer bump and the polymer protective layer is exposed through a mask having regions of different transmittance A polymer layer is developed by performing another development. 2 4. The method for manufacturing an elastic bump structure according to item 14 of the scope of patent application, wherein the step of forming a plurality of conductive contacts on the surface of an electronic component further includes forming a metal layer on the surface. Steps for conducting contacts. 25. The manufacturing method of the elastic bump structure according to item 24 of the scope of the patent application, wherein the step of forming a lower metal layer on the conductive contact of the electronic component is forming the lower metal layer on the conductive contact. At the same time, a ground metal shielding layer is formed on the surface of the electronic component. The ground metal shielding layer covers a protective film on the surface of the electronic component and is connected to the ground bonding pad of the substrate. 2 6. — A flip chip structure including: a substrate having a plurality of bonding pads formed on the surface thereof as conductive circuits of the substrate, an electronic component having a plurality of conductive contacts on its surface; _ a plurality of elastic bumps Is the conductive contact formed on the surface of the electronic component. The elastic bump is formed by a polymer bump and a metal layer. The polymer bump has an upper surface, a lower surface, and one or more A side surface that connects the upper surface and the lower surface, the upper surface is bonded to the bonding pad on the substrate surface, and the lower surface Page 23, 200402859 Six, the scope of the patent application, surface bonding, and then through this connection, to raise the electrical parts in the direction of the bumps 2 7. Ru Ziqi 2 8 3 1 · As for layer 32 · For one-to-one joint application, one of the special bumps is applied for the surface of the special bump and the four applications are applied by the two phases. The conductive application is applied by the two phases. From the four applications, the application is dedicated to the conductive side for the electrical side to conduct; the agent, the area is in the shape of the area, and the shape of the area is the side of the polymer group without contact. The electric range of the electric range on the side of the polymer range adjacent to the polymer of the profit range extends to the conductive element and the system are not complete and the adhesive is then a cylinder of the base No. 26 and a hexahedron. 〇The adjacent to the metal layer of item 28 is coated on the upper surface of the dagger electrical contact to form a vertical electrical connection: Electrical connection, the high scores cover the -general layer to isolate it. The side system is arranged on the substrate, the electronic element board and the electronic component. Description: flip-chip structure, wherein the high-fraction, /, facet, polygonal column and cone-shaped flip-chip structure, wherein the high-fractal, which has the upper surface, the following flip-chip structure, wherein The upper surface of the metal is covered to the side surface of the polymer bump adjacent to the bump and extends to the chip-on-chip structure described above, wherein the upper surface of the metal is coated to the polymer bump to extend to the conductive contact . The flip-chip structure described above, wherein the upper surface of the metal is covered to the polymer bump and extended to conduct the conductive contact. The covered crystal structure of item 28, wherein the side of the metal bump of item 28 extends one of the bumps of item 28, Page 24 200402859 6. Scope of patent application The layer is covered from the upper surface of the polymer bump to any three of the side surfaces of the polymer bump and extends to the conductive contact. 33. The covered crystal structure described in item 26 of the scope of the patent application, wherein the area covered by the metal layer is within 1 micrometer to 5 micrometers smaller than the edge of the polymer bump. 3 4 · The flip-chip structure as described in item 26 of the scope of patent application, wherein the plurality of elastic bumps are arranged in a staggered double-row arrangement, of which any two adjacent elastic bumps, one of which The elastic bump is adjacent to another elastic bump with the side portion not covering the metal layer. 35. The flip-chip structure as described in item 26 of the scope of patent application, wherein the metal layer is composed of an adhesive metal layer and a metal layer covering the metal layer. 36. The flip-chip structure as described in item 26 of the patent application scope, wherein the lower surface of the high-molecular bump is provided with a lower metal layer to adhere to the conductive contact of the electronic component. 37. The flip-chip structure according to item 26 of the patent application scope, wherein the electronic component further comprises a polymer protective layer. 3 8 · The flip-chip structure described in item 26 of the scope of patent application, wherein the electronic component further includes a polymer protective layer and a ground metal shielding layer, and the ground metal shielding layer covers one of the surfaces of the electronic component. The protective film is quickly connected to the ground bonding pad of the substrate, and the polymer protective layer covers the metal shielding layer. 39. The flip-chip structure as described in item 26 of the patent application scope, wherein the metal layer extends to the periphery of the surface of the electronic component to form a contact test structure. 200402859 VI. Scope of patent application " 40 · The flip-chip structure as described in item 26 of the patent application scope, wherein the electronic component is a liquid crystal display driving chip. 41 · The flip-chip structure as described in item 26 of the scope of the patent application, wherein the substrate is selected from the group consisting of an organic substrate, a ceramic substrate, a glass substrate, and a Shi Xi substrate: a Shi Shenhua gallium substrate and a metal substrate with an oxide layer on the surface. One of the clan formations. Tingba 42 · As described in the scope of patent application No. 26, the structure of the flip chip, the agent is selected from the anisotropic conductive adhesive and non-conductive adhesive = medium 1 43 · — species, the manufacture of crystal structure The method includes the following steps: ϊϊ of the board: a plurality of bonding pads are formed on the surface of the board as a base and a plurality of conductive contacts are formed on the surface of the cow's board; The upper surface, the lower surface, and the side of one or one two-Z-blade projections 忒 are connected to the upper side of the upper ridge on the upper surface On the surface, the metal layer is coated with a direct electrical connection side extending to the conducting conductive contact to form a vertical metal layer to isolate two "blocks. The side is not completely coated to make the conductive layer coated. The upper part of the elastic bump is a bonding pad quasi-pressed on the surface of the substrate, so that the bonding surface of the surface, the covered metal layer is bonded to the bottom surface of the substrate, and the conductive contact is bonded, To provide the I 1 Page 26 200402859 6. Scope of patent application ^ The electrical connection between the electronic component and the substrate; and curing the adhesive to join the component and the substrate. 44. The method for manufacturing a flip chip structure according to item 43 of the scope of application for a patent, wherein the shape of the polymer bump is one of a cylinder, a hexahedron, a polygonal column, and a cone. 4 5. The method for manufacturing a flip-chip structure according to item 43 of the scope of the patent application, wherein the shape of the polymer bump is a hexahedron shape, which has the upper surface, the lower surface, and four sides. The metal layer is covered from the upper surface of the polymer insulating block to two opposite sides of the polymer insulating block and is not adjacent to the side surface of the adjacent bump and extends to the conductive connection φ point. 4 6. The manufacturing method of the flip-chip structure according to item 43 of the scope of the patent application, wherein the shape of the polymer bump is a hexahedron shape, which has the upper surface, the lower surface and four sides, wherein The metal layer is covered from the upper surface of the polymer bump to two adjacent sides of the polymer bump and extends to conduct the conductive contact. 4 7. The method for manufacturing a flip-chip structure according to item 43 of the scope of the patent application, wherein the shape of the polymer bump is a hexahedron shape, which has the upper surface, the lower surface, and four sides. The metal layer is covered from the upper surface of the polymer bump to one of the four sides of the polymer bump, and extends to the conductive contact. 4 8. The manufacturing method of a flip-chip structure according to item 43 of the scope of the patent application, wherein the shape of the polymer bump is a hexahedron shape, which has the upper surface, the lower surface, and four sides. Metal layer Page 27 200402859 6. Scope of Patent Application The upper surface of one of the side 49 · bumps is covered to any surface of the polymer bump 'and extends to conduct the conductive contact. The system of covering crystal structure as described in item 43 of the scope of application for patent, wherein the area covered by the metal layer is 1 micrometer to 5 micrometers smaller than the south molecular convex. Manufacture method, the edge of the block 5 ◦ The manufacturer of the flip-chip structure as described in item 43 of the scope of the patent application, wherein the metal layer is composed of an outer layer of an adhesive metal layer—removal. I belongs to the layer office 5 1 · The manufacturer of the flip-chip structure as described in item 43 of the patent application scope, wherein the polymer bump is formed on the surface of the conductive contact by the photolithography technology. , And at the same time on the surface of the electronic component / component south molecular protective layer. to make 5 2 · The system of flip-chip structure as described in item 51 of the scope of patent application, wherein the height of the europium molecular bump and the polymer protective layer 2 = exposure through a mask with regions of different transmittance One high eight, the knife in the layer, into the development once to complete. 5 3 · The manufacturer of the flip-chip structure as described in item 4.3 of the scope of patent application, wherein the lower surface of the plutonium molecular bump has the following metal ^ to paste the conductive puppet of the electronic component. 5 4. The method for manufacturing an elastic bump structure according to item 43 of the scope of the patent application, wherein the electronic component further includes a polymer protective layer and a ground metal shielding layer, and the ground metal shielding layer covers the electronic component A protective film on the surface is connected to the ground bonding pad of the substrate, and the polymer protective layer covers the metal shielding layer. 200402859 Page 29