SU396664A1 - ORGANIC DEVELOPER FOR POSITIVE PHOTORESIS - Google Patents

Description

The invention relates to the preparation of organic crystals for positive photoresists, used in the manufacture of semi-conducting devices, and can be applied to the photolithography operation in the manufacture of continuous transistors and integrated circuits.

Producing agents for positive photoresist based on naphthoquinone diazides containing ethanolamine are known, in common, in a developer and as a mixture of monoethanol IMTA, triethanoladin and water. In this case, it is not recommended to lure the developer, consisting only of lunoeth nolamia and water, because the photoresist is destroyed because the content of lunoethanolamine is above 20 wt.%. When the content of this zhomponenta less zhazannogo kolichestia there is a poor appearance.

A characteristic feature of the well-known ethanol-imitating agents. The fact that during repeated application is poorly established, the paaiMepOB relief pattern from the | PL1stins to the plate is increased, which leads to an increase in these sizes compared to the size of the photocell; and contributes to the formation of a significant wedge etching of silicon oxide.

In order to eliminate iodine size

the relief pattern “and on semiconductor nlastins urea is introduced into the solution. It is introduced in an amount of 25-30% b1% in relation to 18-20% monoethanolamine.

The appearance of positive photoresists organica .m pro 1vitela.1. with ethanolamia and: urine, it gives the opportunity to get a qualitative appearance, to achieve reproducibility of the sizes of the relief pattern according to the set) within the batch of blueness and from batch to batch, and also to exclude a wedge when etched).

The introduction of urea into a solution containing α-monoethanol min) i water allows one to stabilize the manifestation process when the content of moloethanolamine is changed in fairly wide limits ah and to reduce the content of ethanolamines in the solvent, which leads to a decrease in TOK1NICHOLNITI with few manufacturers.

Improving the quality of the manifestation (To a large extent, a higher adhesion of urea containing producers to the photoresist contributes to the photoresist compared to the known ones.

The good reproducibility of the specified dimensions on the i1c conductor plates and the elimination of the wedge during a tr / av increases the possibility of obtaining more high-frequency 1 planar transistors, increases the degree of integration of the elements of integrated circuits and the output of suitable semiconductor devices without

out-of-stock iKaivHx-lnbo additional changes in the technological cycle of their in-products. The proposed vendor can be applied at the .Bicex stages of the photolithographic process for the manufacture of planar lupruvodniki p: ri, b, and equal in those cases when ooipa6o-TiKia positive photoresisc .ccfc is needed;

The use of the proposed LroVitel, especially cheshgo. In the manufacture of metal-based photomasks for planar semiconductor K01Vih devices, because they require obtaining a pH of a strictly defined dimensions ic with a clear edge and image.

The cost of a trade is lower than the cost of the producers of ethanol) mines used in the present BpaNin, so KaiK is the content of the last. In the composition of the developer, the content is lower than in the known ones, and the urethra beforehand is a product. in large quantities.

Example. The manufacturer is made by preparing a 50–25% urea solution to a volume of 1 vol. including a solution of 1 part 97% of 1HUH monoE1panol1mya (MRTU-b-02-495-68), thoroughly mixing the mixture and diluting with 2.5--3 parts of water.

8 workers were tested: their batches of silicon in the manufacture of an integrated circuit, in which in situ photoresist Tina was used in the photolithography process

OP-383. A 0.8 μm thick layer of photoresist is applied by centrifuging onto the silicon wafer and onto the aluminum coating. A 20 EM mercury lamp is used to expose for 13 seconds. The first drying is carried out for 15 minutes at a temperature of 100 ± 5 ° C. The development is carried out for 3–10 min, after which the plates are washed with Ü1T and dried in a centrifuge. The second drying is made: water t. In a ternomicate at 140 ° C for 30-40 minutes.

For etching the oxide film, a trap containing HF, NH4F and water is used in a ratio of 2: 7: 1 for 7-10 minutes. For etching alu, m.ini use an etchant, containing acetic acid, orthophosphoric acid and water, for 30 minutes at the usual temperature and 10-12 minutes at a temperature of 30-55 ° C.

After etching, the photoresist is taken out and the relief pattern is measured under the MII-4 micro-cops.

Measurements showed that the wedge on silicon oxide coated wafers is practically absent, and on aluminum coated wafers does not exceed 0.4 microns. The surface of the plastic is clean, there is no greyish bloom. The photoresist is well removed. The adjustment by the acid film and the manufacturer is not observed. The contours of the relief pattern / ka clear.

The measurement results are shown in the table.

.Mono vrancvi amine-urea-water

Moioetacholamp - trizanol. M 111-water

The comparative data given in the table shows that during etching by the same developer during the same time of etching of silicon wafers coated with aluminum, silicon and aluminum, on the plates produced by paiCTbopoiM consisting of monoethiols 1 tri-thiolayin and water, a clin is 0.6-1.4 µl1, while in the case of solutions containing urea, the wedge does not exceed 0.4 µm and npaiKTimeoKn is missing for most batches.

Subject invention

Claims (2)

1.Organic developer for positive photoresists based on naphthohiyoidiazids, containing monoethiolamine, characterized in that, in order to eliminate distortions in the size of the relief pattern on semiconducting plates, urea is introduced into the solution. 2. An organic promoter according to claim 1, characterized in that the urea is introduced in an amount of 25-30% by weight by fire to 18-20% by weight of lamina and na.