SU1389435A1 - Method and installation for monitoring the distribution of structural irregularities in a single crystal volume - Google Patents

Abstract

The invention allows one to control the three-dimensional distribution of structural defects in semiconductor single crystals directly in the shop-floor conditions of microelectronic production. The aim of the invention is to improve the information content of the control by determining the distribution of structural inhomogeneities in the crystal thickness. In order to control the distribution of defects in the transverse to the single crystal, the cross section of the x-ray beam, diffracted from the single crystal, the specified part of which is irradiated by a diverging primary beam, providing simultaneous diffraction of K and Kd of the Characteristic X-ray spectrum and spectral beams, is carried out. distribution along the line- fragmentation of areas. The installation contains a radiation gap between the single crystal and the detector; the receiving slit mechanism and the turning slit rotation unit; the writing unit movement synchronization unit of the two-coordinate recording unit moving the receiving slit across the diffracted beam; and two keys by which the operation modes are switched installations from recording patterns of the distribution of defects over the area of a single crystal to recording patterns of the distribution of defects in thickness or in the area of any not a single crystal layer. 2 s and 2 z. P. f-ly, 5 ill. with S cl with 00; O 4 ;: CO 01

Description

The invention relates to X-ray diffraction analysis, in particular X-ray diffraction topography, and can be used to control the distribution of crystal structure defects both in area and in thickness of single crystals, including in the workshop conditions for microelectronic production.

The aim of the invention is to increase the information content of the control by determining the distribution of structural inhomogeneities across the thickness of the single crystal.

Figure 1 shows a block diagram of an installation that implements a method for controlling the distribution of structural inhomogeneities; Fig. 2 and Fig. 3 are diagrams illustrating features of the geometry of shooting with microfocus and o6bMfibiM X-ray sources; Fig. 4 is a diagram illustrating possible placement options for the receiving slit when shooting through the light; Fig. 5 is a diagram illustrating possible placement options for the receiving slit when shooting for reflection.

An installation for controlling the distribution of structural inhomogeneities in the volume of a single crystal (Fig. 1) contains an X-ray source 1, a collimator, a single-crystal removal mechanism 3 to a reflecting position by moving and rotating an X-ray source (tube) with a collimator, a X-axis scanner carriage 4, a holder 5

25 output of synchronization unit 10 with input X of the recording node, and in position B connects output X of synchronization unit 9 with input X of the recording node. Detected by detector

monocrystal 6, slit gap (the slit 11 signal transforms and fixes the diaphragm) 7, m ... mechanism of 8 movements and turns of the receiving wheel, unit 9 of synchronization of movement of the scanning carriage 4 with movement of the writing body of the two-coordinate recording unit, unit 10 of the synchronization of the movement of the receiving slits 7 across the diffracted beam with the writing organ moving the recording node, one-dimensional quantum detector 11, diffracted X-ray recording unit (X-ray intensity meter) 12; block 13, life-long, two-coordinate recording unit 14, keys 15 and 16, and block 17 for controlling the mode of movement of the writing body of the recording organ:.

X-rays or source 1 pass through the slit of the collimator

45

50

55

c in the intensity meter 12 and enters the comparison unit 13, where the registered signal is compared with two given powder values G and Iij, where I corresponds to the diffraction intensity from the structurally perfect single crystal region, and 1 to the diffraction intensity from the single crystal portion with the specified density of structure defects. Depending on the ratio of the signal level I, with threshold levels 1 and 1, one of three possible control signals is supplied to the input of control unit 17, on the basis of which unit 17 sets the mode of movement of the writing organ of recording unit 14, .Key 16 in position B of connection em output unit 13 compared to the input of the control unit 17 and one

2, forming a beam of given divergence and cross section, falling on the single crystal 6 at the Bragg angle to the chosen system of atomic planes (figure 1 shows the setup in the transmission mode). The transmitted beam is absorbed by one of the two blinds of which the receiving slit diaphragm 7 consists, which transmits part of the diffracted

the x-ray beam falling into the input window of the detector 11, the single crystal 6 is fixed in the holder 5 mounted on the scanning carriage 4 allowing the single crystal to move in a plane parallel to the cut plane, the movement of the carriage is tracked by the synchronization unit 9. Reception

The slit diaphragm is fixed in the mechanism of 8 displacements and turns, allowing the slit to be set at a problem angle to the cut-off plane of the single crystal and at a predetermined distance

from it, as well as rotate the slit around an axis perpendicular to the cut-off plane of the single crystal, and move the slit across the diffracted beam, the latter movement being tracked by the synchronization unit 10.

In addition, mechanism 8 allows insertion of the receiving slit under the diffracted beam and removing it from under it. Key 15 in position A connects

the output of the synchronization unit 10 with the input X of the recording node, and in position B connects the output X of the synchronization unit 9 with the input X of the recording node. Detected by detector

11 Signal is converted and pushed5

0

five

c in the intensity meter 12 and enters the comparison unit 13, where the registered signal is compared with two given powder values G and Iij, where I corresponds to the diffraction intensity from the structurally perfect single crystal region, and 1 to the diffraction intensity from the single crystal portion with the specified density of structure defects. Depending on the ratio of signal level I, with threshold levels 1 and 1, one of three possible control signals is fed to the input of control block 17, on the basis of which block 17 sets the mode of movement of the writing organ of recording unit 14. Key 16 in position B of connection em output unit 13 comparison with the input unit 17 controls and one

one-time ni.ixoji Y of the synchronization unit 9 with the input Y of the recording 1.1 of the driving node 14, and the L position connects the output of the registration unit 12 with the input Y of the filling unit 14 and disconnects the input of the control unit 17 from the output of the block 13

Comparison. In this case, unit 17 sets the ““

with the only constant mode of movement of the writing organ of the recording unit.

If the slit diaphragm 7 is removed from under the diffracted beam, the key 15 connects the output X of the synchronization unit 9 to the input X of the recording node, and the key 16 connects the output of the comparison unit 3 to the input of the control unit 17 and simultaneously the output Y of the synchronization unit 9 with the input Y when the scanning carriage 4 is moved in one of two mutually perpendicular directions, the synchronization unit 9 moves in the corresponding direction with the proportional speed of the recording body of the recording unit 14, i.e. the position of the single-crystal region when scanning at each time point unambiguously corresponds to the position of the writing body. The control output signal of the comparator unit 13 is fed to the input of the control unit 17, which sets, depending on the control signal fed to its input, the mode of movement of the squeezing op - the ganna of the two-coordinate recording unit 14, due to which the recorded picture is displayed with different signs of the area in which 1c, I,, I ,. : .1о and I at 7, 12, i.e. A picture of the distribution of structural inhomogeneities over the area of a single crystal is recorded in accordance with the prototype method.

If, under the conditions of keys 15 and 16 described above, the slit diaphragm has entered a diffracted beam node and fixed it in a position in which it passes x-rays diffracted in a given layer across the sample thickness into the input window of the Detector 11, then a structural distribution pattern is recorded irregularities in the area of this layer.

 If you turn the key 16 to the position in which the output of the block 12 is registered and connected to the input Y of the record

Q

0 5, p

ABOUT

0

five

the contacting unit, and the input of the control unit 17 is disconnected from the output of the comparison unit 13, then the distribution of the density of structural inhomogeneities over the area of the layer defined in thickness of the crystal is recorded.

If the slit diaphragm 7 is removed from under the diffracted beam, the distribution of the density of structural inhomogeneities rto of the area of the single crystal is recorded. If you switch the key 15 to a position in which the input X of the recording unit 14 is connected to the output of the synchronization unit 10, fix the single crystal in a position in which the primary X-ray beam irradiates a given portion of it, insert the receiving slit 7 under the diffracted beam and move it across the diffracted beam, This is done by recording the distribution of the density of structural inhomogeneities in the cross section of the selected portion of the single crystal.

If the key 16 is switched to a position in which the input Y of the recording node is connected to the output Y b, the synchronization lock 9, and simultaneously the output of the comparison unit 13 is connected to the control block 17, the pattern of distribution of structural inhomogeneities in the cross section of the selected single crystal is recorded .

When recording density distributions of structural inhomogeneities over the area of a single crystal or the area of a layer specified along Tolrin, the distribution of the density of structural inhomogeneities is displayed along the chord of the single crystal along which the section irradiated by the primary beam moves or (while controlling the distribution of the density of structural inhomogeneities across the thickness of the single crystal) along the fragmentation line cross sections of the diffracted beam by the receiving slit. Transition to another area of the single crystal is carried out in this case manually or in automatic mode.

The accuracy f of the determination of the depth of a defect in a single crystal by sectional x-ray pattern is defined as

. . .С2§, (31)

cin. and otp-)

sin2 in

sin2 0

where Yar is the width of the initial radiation of the x-ray beam; and t projections of this width onto the cut-off plane of monocrystalline steel;

(c) Bragg angle for selected X-ray wavelengths and the reflecting plane (hkl) ft — the angle between the primary beam and the reflecting plane.

For given A and (hkl), the parameter c / is determined by the width of the primary beam (more precisely, the width of the part that participates in Bragg reflection), which, in turn, depends on the size of the focal spot of the X-ray tube and the width of the collimation slots (the dependence of the width of the part of the primary beam participating in the Bragg reflection on the angular width of the reflection of the single crystal for the case of monitoring of high-quality, perfect semiconductor single crystals can be neglected). This is illustrated in Figures 2 and 3, where focal spot 18, collimating slit 19, single crystal 6, primary 20 and diffracted 21 X-ray beams are indicated. The fp spot and collimating slit in FIGS. 2 and 3 (as well as in figs 4 and 5) are parallel to the cut-off plane of the single crystal, but it is easy to carry out appropriate calculations for the non-parallel focal spot, collimating cut and single-crystal plane.

As can be seen from FIGS. 2 and 3, when shooting with a conventional source (S f), if the natural angular divergence of a single crystal (component for silicon is not more than 20–30) is neglected, and S, while shooting with a microfocus source radiation a f, which is written in the foregoing relation (25). When calculating the angular relations, the distance D between the input surface of the single crystal and the element determining the width of the part of the primary beam participating in the Bragg reflection, i.e.

50 m to the accuracy of controlling the width Z of the MoiKc t and length, the D4Dj segment, the parallel surface SS and the joint side of the DE and DjE triangle, or at least strife using the microfocus tube; D A B, and the usual D B (26 ). 55 one hundred between the boundaries of the DL beam 21 The scheme of the implementation of the method in the geometrically and D, L beam 21 in the plane and the clearance (Fig. 4) with a microfocus tube, where the focal length is indicated

no slit. In the latter case, the receiving slit is equivalent to a wing.

Q

X-ray tube 18, collimation of slit 19, single crystal 6, primary beams 22 and 22, which provide diffraction from a system of atomic planes (hkl), respectively for Kj / and K d components of the characteristic x-ray spectrum, the corresponding diffracted

X-ray beams 21 and 21, receiving slit 7 (three possible options for the location of the receiving slit are indicated). Borders 23 and 23 of the primary beam formed by the collimating gap, 0

e and Q + and YB are Bragg angles for K (/, and Kgfj components of the spectrum, respectively, and / S + l & angles between the normal to the cut-off plane of the single crystal and, respectively, beams 22

QH22, and Y – Yv are the angles between the normal to the cut-off plane of the single crystal and, respectively, beams 21 and 21.

From figure 4 it follows: SS С С

5 BqO4 a. The receiving slit may be located either between the output surface of the single crystal SS and point E, or at a distance from the output surface of the single crystal, greater than the distance between this surface and point L, or in the vicinity of the superimposed plane of beams 21 and 21, section which the plane of the figure pro. comes along the line GK. In all cases, the condition described by relation (1) is satisfied.

The first case, when the receiving slit is located between the surface SS and point E. In practice, this case is realized only when the distance between the input surface of the QQ single crystal and point E is greater than the thickness of the crystal tg. The distance X between the receiving slit and the surface SS in this case is determined by the relation (2), where X d, is described by the formula (14). The width Z of the receiving slit must either simultaneously be no more than the maximum satisfying requirements for the accuracy of monitoring the width Z MoiKc t and length, the segment D4Dj, the parallel surface S S and the connecting side D.E and DjE of the triangle, or not less than 5

0

five

5 one hundred between the boundaries DL of beam 21 and D, L of beam 21 into the plane and

one hundred between the boundaries DL of beam 21 and D, L of beam 21 into the plane and

no slit. In the latter case, the receiving slit is equivalent to a wing.

The first variant of the location of the slit is described by the system of equations (2) - (5).

The second option is when the receiving slit is removed from the surface SS by a distance greater than the distance between this surface and the point L. Spacing 1 1 X between the receiving slit and n

the surface SS in this case is determined by the relation O (6)., where X is described by formula (15). The width Z of the receiving slit should be simultaneously no more than Z. and the length of the segment.

15

25

thirty

parallel to the surface SS and connecting the straight lines DL and D, L for their transducers at point L, or not less than the distance between the boundaries of the beam 21 and DJ.L of the beam 21 in the plane of the receiving slit. The second case located at the receiving slit is described by the system of equation (3) (6) - (8).

The third case is when the receiving slit is located in the vicinity of the overlap plane of beams 21 and 21, which makes an angle f with a normal to the surface SS, the value of which is determined by relation (30). In this case, the width Z of the receiving slit parallel to the overlap plane of the beams 21 and 21 must either be no more than the width of the projection onto this plane of Z д d (., Or not less than the total width of the overlapping beams 21 and 21 in the plane of the receiving slit In this case, the receiving slit should intersect the diffracted beams, located in a space bounded by planes parallel to the superimposed plane of beams 21 and 21 and spaced from it by distances x ± Y, such that planes (fig, 4) distances G, G | HGjG are equal to width the projections on them, with Y being defined by formula (29). The third variant of the location of the receiving slit when shooting through the light is described by the system of equations (27) - (30).

35

40

45

From the atomic system (hkl) corresponding to the components of the X-ray spectral diffracted receiving slit 7 (a possible variant of the flaring slit), the border 23 of the beam forming the slit, in 9+ angles corresponding to the Kjj spec. angles between cut KocTjr (superficial steel and, respectively, 22, ui f + normal to the surface and, accordingly, a beam

The receiving slit can be (Fig. 5) either on a monocryst surface than the distance from this point to L, or near the thickness of the single crystal, there is a gap between the n in the plane, parallel to

a single crystal

both cases x must be in relation to (1). If ra is more, the second can not be realized

The first variant, when the gap is removed from the top of the steel by the distance X, the distance X between this point and L, what about relations (9) and (1 receiving slot in this with either Z f, cut length, single surface) direct CL and CjL at the point L, or standing between the boundaries 21 and CjCj of the beam 21 in the memory slot.

The first variant of the crack slot is described by

The scheme of the method c. geometries (3), (9) - (11).

eight

five

tO

15

five

20

from the system of atomic planes (hkl) respectively for K y and IvV components of the characteristic x-ray spectrum, the corresponding diffracted beams 21 and 21, the receiving slit 7 (two possible variants of the location of the receiving slit are shown), the boundaries 23 and 23 of the primary beam formed by the collimation - a tanging gap, in 9+ G are the Braggon angles for the Ku and Kjj components of the spectrum, respectively, and / J and /) + + and d are the angles between the normal to the KocTjr cut (surface) of the single crystal and, respectively, beams 22 u22, ui f + - angles between the normal to the surface of monks istalla beams and respectively 21 and 21,

The receiving slit can be located (figure 5) either at a distance from the single crystal surface, greater than the distance from this surface to the point L, or in close proximity to the single crystal surface, where the distance between the edges of the beams 21 and 21 in the plane parallel to the surface of the single crystal, less than Z

AT

In both cases, relation (1) must be satisfied. If the distance SS is greater, the second option cannot be implemented at all.

The first variant is when the receiving slit is removed from the single crystal surface by a distance X greater than the distance X between this surface and point L, as described by relations (9) and (16). The width Z of the receiving slit in this case must either be at the same time no more than Z f, the length of the segment parallel to the single crystal surface and connecting the direct CL and CjL beyond their intersection at the point L, or not less than the distance between the boundaries of the beam 21 and CjCj of the beam 21 in the plane of the receiving gap.

The first variant of the location of the receiving slit is described by a system of extensions (3), (9) - (11).

Fig. 5 with a conventional X-ray tube, where the focal spot 18 of the X-ray tube, collimating slit 19, single crystal 6, single-crystal layer 2A of thickness t, in which diffraction reflection is formed, the primary beams 22 and 22, providing diffraction are considered. the variant, when the receiving slit is located between the surface of the single crystal and the plane parallel to it, which contains the slices DD,. . In this case, the distance between the surface of the single crystal and the receiving slit should not exceed the distance X, but the width at 9.

The slot should be either no more than Z, or no less than the distance between the gratting CjC of the beam 21 and, of the beam 21 in the plane of the receiving slot. The second variant of the location of the receiving slit when shooting for reflection is described by the system of equations (3), (12) and (13).

In the experimental sample of the setup, a serially manufactured X-ray unit URS-002 with a microfocus X-ray tube BSK-1 Mo (focal spot size f 30 µm) was used as a radiation source. For the diffracted beam registers, the BDS-6-05 scintillation detector and the MiBTP EIA-1-1 are used. The two-coordinate device is a two-coordinate recorder PDP4-002, the pen of which is used during Recording patterns of distribution of structural heterogeneity: lifted if IQ 1 is omitted, if 1 ID T-h t is omitted and oscillates with a constant frequency and amplitude / in the direction perpendicular to the movement of the pen when writing if I about 1-25 during the recording of the distribution of the density of structural non-

homogeneity is omitted.

During recording of patterns of distribution of structure inhomogeneities and density distributions of structural inhomogeneities over the area of a single crystal, the recorder's pen moves synchronously with the movement of the scanning carriage with the sample holder in one of two possible scanning directions (parallel to the Bragg direction). heterogeneities and density distributions of structural inhomogeneities across the thickness of a single crystal

la - synchronously with the displacement of the receiving slit across the diffracted beam (in the Bragg direction). After each movement of the carriage (receiving slit) in the Bragg direction50

the distance determined by the position of the switch switches, which are set so that during the scanning of the carriage the primary beam irradiates the single crystal rto of the whole diameter, and during the scanning of the receiving slit it crosses the diffracted reflexes K y and K to move carriages.

.

five

0

five

3,510

(in manual or automatic modes) along the perpendicular direction to the specified step.

Thus, in the control process, a series of consecutive scans of a single crystal by the primary beam (or a diffracted beam by the receiving slit) along the Bragg direction is carried out with successive step-by-step movement of the single crystal along the perpendicular direction; registration of patterns of distribution of structural inhomogeneities — a system of equilibrium chords of a single crystal (chords of diffracted K and / or Kj / j reflexes) parallel to the direction of the background on which the picture of the distribution of clusters of structural defects in the form of areas shaded by an oscillating pen is displayed; when registering distributions of the density of structural inhomogeneities, a system of profiles of the diffraction intensity distribution along selected chords of a single crystal (chords of diffracted K and / or Kj reflections) parallel to the scanning direction.

Synchronization of movements of the scanning carriage and recorder pen, reception, slot and pen, recorder, memorization of the set threshold magnitudes and comparing them with the recorded diffraction intensity, control of the recorder's operating mode, switching modes, installation operation (keys 15 and 16) is carried out by an electronic control device. The mechanism of movement and rotation of the receiving slit and the unit for synchronizing the movement of the receiving slit with the movement of the recorder's pen are placed on the holder of the detector holder. The movement and rotation mechanism of the receiving slit contains dovetail guides with a movable table on which the MH-145 electric motor is attached, the rotation of which is transmitted by rubber to the multi-turn spiral potentiometer shaft, which serves to synchronize the movement of the receiving slit and the pen of the recorder. The motor shaft is connected to a rotating drum of a micrometer feeder that converts the rotation of the drum into a linear movement of the pusher on which the three-section slot holder is fixed, whose sections can move and rotate relative to each other to ensure that the single-crystal surface changes, turning the reception slot around its own longitudinal axis and around the normal to the surface of the single crystal. The receiving slit is made of two brass shutters 10 mm high, the gap between the flat polished ends of which is 10 microns, mounted in a cage attached to the holder. When testing silicon plates with a thickness of tg Oh, / 4 f-iM the distance between the focal point a microfocal x-ray tube (a f and 30 µm) and the entrance surface of the plate is D 180 mm between the exit surface of the plate and the receiving slit Xth 10 m. When the slit is rotated around its own longitudinal axis through an angle of 45 ° Z, 7.1 µm When using diffraction reflected and (022) from the system of atomic planes (011), perpendicular to the surface of silicon wafer orientation: oo17 and: im (9 / i 3

and 10 ° 40, 30, and 4), and a given accuracy of control over the distribution of structural heterogeneity across the sample thickness / 100 µm, we obtain:

 (wetltC

 -7.1

hi.n2Q

um; -; 7 COS

 37.67 microns; X, 30.0 microns; L {and 36.20 microns.

those. the conditions specified by the system of equations (1) - (5) are satisfied.

Claims (4)

Invention Formula . 1. A method of controlling the distribution of structural inhomogeneities in a single crystal volume, including irradiating a single crystal with a collimated primary X-ray beam, the divergence of which in the Bragg direction is limited by a collimating slit to a value that provides simultaneous diffraction from the selected system of reflecting crystallographic planes for characteristic lines, tti 43512 x-ray spectrum on any part of the single crystal without its additional alignment, and in the anti-Bragg direction ensure the size of the reflex recorded by the detector, the movement of the single crystal relative to the radiation source with the detector in a flat five 0 Q ST parallel to the cut-off plane of a single crystal, measuring the intensity of diffracted rays, characterized in that, in order to increase the informativity of the COUNT control, determine the distribution of structural inhomogeneities across the thickness of the single crystal, fix the single crystal at a position at which the primary beam irradiates a given single-flow drain of the single crystal, and Continuous fragmentation of the diffracted beam cross section is achieved by moving the receiving slit located between the single crystal and the detector so that The displacement could cross the diffracted reflexes K and, and provide the source focusing distances -, the collimating slit (A), the collimating slit - the entrance surface of the single crystal (B), the exit surface of the single crystal - the receiving slot (X) and dimensions the projections of the yirin of the focus of the source (f), the collimating slit (S), and the receiving slit (Z) onto the cut-off plane of the single crystal in the plane of incidence of the Rheitgen beam based on t / sin29 .h.ch  P) five 0 five 0 but five 0 five X i X, Z Z me1x Z 55- L% 5 g -I, - (L + 2a + M) l, X g X, g & g Max 2 hg Z l - (L,) AE (2) 3), (A) (five) (6) (3) (7) (eight)  g) - J, D) soa () j9) cggg. . --VGPTeGso l so8 Tl / 9). - - - i V  . i. acos cos fgog (ft 40) CO (T -f t linjO 40) CO (j J)  --- - ... „, (isj t a so8Lsd $ Gso8 (“a) CO () t in2 10 J) COS - Dcoay y. “J)    iin49cos D cos «e G 1 MO / Y. IjSK - () jinjlf / cot "co) t linAe / eosy CQI (l.t 9) J. Bini 7co yco rjT7 r ,, 2HL # «t« in2 (8 E9) , L С08Л CO ТА «5TСГ7д + 4в) CO (f + 4WT a, fsin2e 5inZ (fi.jie.. I cos / cos j cos (p y9) CO (.) J , (j..f) Jinje. .. 1p2v . (COS / J., a co j co j f 49J co Jj | jJljJj (f + flflO co9 (2 .. co "n cos 7V + Je T cos T ji T95 P. li ii 2LXLtA§l.2SdJL: jtiL: i5LiJ -l ljlL gl & 41-r or j SlJ 2. COS CO "I CO (ft-fie) COS (f-t-Lv) Q. 0 - 2i2JjL - + t .yy. at" cos / tcoe (/ I + l9) co "| icos} ("7) (18) (19) (20} (21) (22) (23) (24) -sxn2, f "  soy A co p sin2e "Ssi i f, sat s f u. IB, if 3 4 (, if S f, {/ - specified accuracy of control over the distribution of defects over the thickness of the crystal; t is the thickness of the layer of the crystal that forms the di is fractional spraying (when shooting. g on ("7) (18) (19) (20} (21) (22) (23) (24) (25 (26) t tp, where t в is the thickness of a single crystal; in - Bragg angle for the characteristic line Ko;   brzggovskogo ugl dl characteristic line L is the angle between the primary beam and the normal to the cut-off plane of the single crystal; y is the angle between the diffracted 1 normalt beam to the cut-off plane of the single crystal, when shooting ma lumen, the movement of the receiving slit in , G „ - Jin ( .-; r 4 c; rf. (g ifl) te) co Where V. . (j / r ,, gj) sin (V y) arctg G (A ld) 81p rco8r «in 9 a cogjjcos (C ± lv) si 1 t lcosjco (y + je) -cas; ; cos () J cosj- Csin29 cosTi j TsInf -ecos / t .--. “I - “COS / t c where Jf8in2g coe and reflecting from the intensity distribution of the diffracted rays along whether the research institute has fragmented the cross section of the diffracted beam .. 2. Method according to claim 1, characterized in that, in order to provide information on the distribution of structural inhomogeneities over the area of a given layer at a certain depth of a single crystal, the receiving slit is fixed at a position in which it transmits x-rays diffracted in a given layer and at the fixed receiving slit moves the single crystal from the source of the radiation source with the detector in a plane parallel to the cut-off plane of the single crystal, 3.Installation to control distribution in the structural neodnorodiostey obeye monocrystal, comprising X-ray source, collimator, mehanizdM outputting the single crystal in the reflecting position, the chip carrier, the chip carrier moving mechanism, the recording unit of the diffracted X-rays with quantum-dimensional detector, two-coordinate recording node synchronization block movement of the writing the organ of the recording unit with the movement of the irradiated section of the single crystal, characterized in that oh, in order to get informativity control by determining the distribution the space bounded by planes parallel to the plane of overlapping of diffracted reflexes Ku Kg / spaced from it by distances Y, and the size of the projection of the width of the receiving slit Z on the plane of overlapping each other of diffracted reflections K / and K in the plane of incidence X-ray beam provide the outcome of the conditions (2T) (W (AND   and cogjjcos (C ± lv) si Csin29 cosTi j TsInf -ecos / t 0 0 c five five .--. “Inr.co G. - “COS / t cot (.) Lin f coi) {I tJO) {) I v laziness of structural inhomogeneities monocrystal thickness, it contains a receiving slit placed between the single crystal and the detector, mechanism: movements and turns of the receiving slit, synchronization unit of movement of the writing body of the recording unit with movement of the receiving slit across the diffracted beam, first key,: switching input X of the recording node or with output the synchronization unit of the moving organ of the recording unit with the movement of the receiving slit, or in the output X of the synchronization unit of the movement of the writing organ a recording of the node with the displacement and a second key that commutes either the output of the recording unit with the input Y of a two-coordinate recording unit, or the output Y of the synchronization unit for moving the writing body of the recording unit with the movement of the irradiated portion of the single crystal with the input Y of the recording unit. 4. Installation according to p. 3, so that it is equipped with a unit for comparing the intensity of diffracted X-rays with predetermined threshold values and a control unit for the movement mode of the food organ, which is connected to the recording node the input of the comparison unit is connected to the unit pe17 1389435 18 1 / I JO-r qjDIB In contrast to the diffracted X-ray diffraction mode control block, the output of the comparing unit of the writing ort-an recorder using a key is connected to the input of the node. 1389435 18 I JO-r qjDIB cfJuf.Z (fft / e.