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SG135924A1 - Nitride-based semiconductor epitaxial substrate, method of manufacturing the same, and hemt substrate - Google Patents

Nitride-based semiconductor epitaxial substrate, method of manufacturing the same, and hemt substrate

Info

Publication number
SG135924A1
SG135924A1 SG200302200-1A SG2003022001A SG135924A1 SG 135924 A1 SG135924 A1 SG 135924A1 SG 2003022001 A SG2003022001 A SG 2003022001A SG 135924 A1 SG135924 A1 SG 135924A1
Authority
SG
Singapore
Prior art keywords
substrate
nitride
manufacturing
same
based semiconductor
Prior art date
Application number
SG200302200-1A
Inventor
Ueno Masaki
Takasuka Eiryo
Akita Katsushi
Chua Soo-Jin
Chen Peng
Original Assignee
Sumitomo Electric Industries
Inst Materials Research & Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries, Inst Materials Research & Eng filed Critical Sumitomo Electric Industries
Priority to SG200302200-1A priority Critical patent/SG135924A1/en
Priority to JP2003158143A priority patent/JP4200049B2/en
Publication of SG135924A1 publication Critical patent/SG135924A1/en

Links

SG200302200-1A 2003-04-02 2003-04-02 Nitride-based semiconductor epitaxial substrate, method of manufacturing the same, and hemt substrate SG135924A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SG200302200-1A SG135924A1 (en) 2003-04-02 2003-04-02 Nitride-based semiconductor epitaxial substrate, method of manufacturing the same, and hemt substrate
JP2003158143A JP4200049B2 (en) 2003-04-02 2003-06-03 Nitride-based semiconductor epitaxial substrate, manufacturing method thereof, and substrate for HEMT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200302200-1A SG135924A1 (en) 2003-04-02 2003-04-02 Nitride-based semiconductor epitaxial substrate, method of manufacturing the same, and hemt substrate

Publications (1)

Publication Number Publication Date
SG135924A1 true SG135924A1 (en) 2007-10-29

Family

ID=33476165

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200302200-1A SG135924A1 (en) 2003-04-02 2003-04-02 Nitride-based semiconductor epitaxial substrate, method of manufacturing the same, and hemt substrate

Country Status (2)

Country Link
JP (1) JP4200049B2 (en)
SG (1) SG135924A1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303475A (en) * 2005-03-23 2006-11-02 Nichia Chem Ind Ltd Field effect transistor
JP2007005764A (en) * 2005-05-27 2007-01-11 Toyota Motor Corp Semiconductor device and method of manufacturing the same
JP5064824B2 (en) * 2006-02-20 2012-10-31 古河電気工業株式会社 Semiconductor element
JP2007335484A (en) * 2006-06-13 2007-12-27 Mitsubishi Cable Ind Ltd Nitride semiconductor wafer
JP2008021756A (en) * 2006-07-12 2008-01-31 Toyota Motor Corp Group iii nitride semiconductor device
JP2008091488A (en) * 2006-09-29 2008-04-17 Rohm Co Ltd Method for manufacturing nitride semiconductor
JP2008153285A (en) * 2006-12-14 2008-07-03 Rohm Co Ltd Nitride semiconductor apparatus and nitride semiconductor manufacturing method
DE112008000409T5 (en) * 2007-02-16 2009-12-24 Sumitomo Chemical Company, Limited Epitaxial substrate for a field effect transistor
JP4920519B2 (en) * 2007-07-26 2012-04-18 株式会社豊田中央研究所 Nitride semiconductor device and manufacturing method thereof
JP2010182993A (en) * 2009-02-09 2010-08-19 Toyota Central R&D Labs Inc Semiconductor device, and method of manufacturing the same
JP5670427B2 (en) * 2009-04-08 2015-02-18 エフィシエント パワー コンヴァーション コーポレーション Dopant diffusion modulation in GaN buffer layers
JP5562579B2 (en) 2009-05-12 2014-07-30 日本碍子株式会社 Method for producing epitaxial substrate for semiconductor device
JP2011228442A (en) * 2010-04-19 2011-11-10 Hitachi Cable Ltd Nitride semiconductor wafer and nitride semiconductor device
EP2600394B1 (en) * 2010-07-29 2017-12-27 NGK Insulators, Ltd. Epitaxial substrate for semiconductor element and production method thereof
JP6024075B2 (en) * 2010-07-30 2016-11-09 住友電気工業株式会社 Semiconductor device and manufacturing method thereof
JP6223075B2 (en) * 2012-10-09 2017-11-01 キヤノン株式会社 Light emitting device manufacturing method and light emitting device
JP6263498B2 (en) * 2015-05-21 2018-01-17 株式会社豊田中央研究所 Semiconductor device and manufacturing method thereof
JP6217719B2 (en) * 2015-09-07 2017-10-25 富士電機株式会社 Method for manufacturing gallium nitride semiconductor device
JP6786307B2 (en) * 2016-08-29 2020-11-18 株式会社ニューフレアテクノロジー Vapor deposition method
JP6950185B2 (en) 2017-01-12 2021-10-13 三菱電機株式会社 Manufacturing method of high electron mobility transistor, high electron mobility transistor
JP7398968B2 (en) * 2020-01-20 2023-12-15 株式会社東芝 Semiconductor device and its manufacturing method
JP7261196B2 (en) * 2020-04-06 2023-04-19 株式会社東芝 semiconductor equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5831277A (en) * 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
US5929466A (en) * 1994-03-09 1999-07-27 Kabushiki Kaisha Toshiba Semiconductor device and method of fabricating the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5929466A (en) * 1994-03-09 1999-07-27 Kabushiki Kaisha Toshiba Semiconductor device and method of fabricating the same
US5831277A (en) * 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures

Also Published As

Publication number Publication date
JP4200049B2 (en) 2008-12-24
JP2004311913A (en) 2004-11-04

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