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SG128449A1 - A method of detecting mask defects, a computer program and a reference substrate - Google Patents

A method of detecting mask defects, a computer program and a reference substrate

Info

Publication number
SG128449A1
SG128449A1 SG200306396A SG200306396A SG128449A1 SG 128449 A1 SG128449 A1 SG 128449A1 SG 200306396 A SG200306396 A SG 200306396A SG 200306396 A SG200306396 A SG 200306396A SG 128449 A1 SG128449 A1 SG 128449A1
Authority
SG
Singapore
Prior art keywords
mask
reference substrate
substrate
computer program
mask defects
Prior art date
Application number
SG200306396A
Inventor
Van Der Jan Evert Werf
Auke Jan Mud
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG128449A1 publication Critical patent/SG128449A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/7065Defects, e.g. optical inspection of patterned layer for defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

A method of detecting mask defects in which a reference substrate is patterned by the mask immediately after manufacture of the mask. The reference substrate is stored in clean conditions while IC manufacture takes place. When a mask defect is suspected a resist coated substrate, the test substrate, is patterned by exposure of the mask. The patterns on the reference substrate and the test substrate are compared to determine if there is a mask defect. The location of the mask defect can be found by scanning smaller areas of the patterns.
SG200306396A 2002-10-28 2003-10-28 A method of detecting mask defects, a computer program and a reference substrate SG128449A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02257465 2002-10-28

Publications (1)

Publication Number Publication Date
SG128449A1 true SG128449A1 (en) 2007-01-30

Family

ID=32668904

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200306396A SG128449A1 (en) 2002-10-28 2003-10-28 A method of detecting mask defects, a computer program and a reference substrate

Country Status (7)

Country Link
US (1) US7307712B2 (en)
JP (1) JP2004191973A (en)
KR (1) KR20040038756A (en)
CN (2) CN101520609A (en)
DE (1) DE60321525D1 (en)
SG (1) SG128449A1 (en)
TW (1) TWI245169B (en)

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KR100684104B1 (en) * 2005-08-02 2007-02-16 삼성전자주식회사 Method of inspecting a defect and apparatus for inspecting a defect using the same
KR100856579B1 (en) * 2007-01-18 2008-09-04 홍운식 Management method of mask for exposure utilizing exposure energy information of wafer accumulated with mask system for accumulrating exposure energy information of wafer
CN101344715B (en) * 2007-07-10 2011-07-13 联华电子股份有限公司 Photomask detection method and on-line immediate photomask detection method
CN101546112B (en) * 2008-03-25 2011-04-20 中芯国际集成电路制造(上海)有限公司 Method for replacing mask
US8390786B2 (en) 2008-09-23 2013-03-05 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US8670106B2 (en) * 2008-09-23 2014-03-11 Pinebrook Imaging, Inc. Optical imaging writer system
US8395752B2 (en) 2008-09-23 2013-03-12 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US8390781B2 (en) 2008-09-23 2013-03-05 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US8041106B2 (en) * 2008-12-05 2011-10-18 Kla-Tencor Corp. Methods and systems for detecting defects on a reticle
CN102129164B (en) * 2010-01-15 2012-08-22 中芯国际集成电路制造(上海)有限公司 Method and system for judging mask defects
CN102193302A (en) * 2010-03-03 2011-09-21 中芯国际集成电路制造(上海)有限公司 Mask image defection detection method and detection system thereof
CN104317159A (en) * 2010-03-03 2015-01-28 中芯国际集成电路制造(上海)有限公司 Mask graphic defect detection method and mask graphic defect detection system for
CN102193306B (en) * 2010-03-11 2012-09-05 中芯国际集成电路制造(上海)有限公司 Method for designing optical mask
US8502544B1 (en) * 2012-05-14 2013-08-06 Taiwan Mask Corporation Method for testing mask articles
US9607371B2 (en) * 2013-04-01 2017-03-28 Kla-Tencor Corporation Mesoscopic defect detection for reticle inspection
WO2014165547A1 (en) * 2013-04-01 2014-10-09 Kla-Tencor Corporation Mesoscopic defect detection for reticle inspection
US10216100B2 (en) * 2015-07-16 2019-02-26 Asml Netherlands B.V. Inspection substrate and an inspection method
DE102017203879B4 (en) * 2017-03-09 2023-06-07 Carl Zeiss Smt Gmbh Method for analyzing a defect site of a photolithographic mask
US10964014B2 (en) 2017-10-30 2021-03-30 Taiwan Semiconductor Manufacturing Company, Ltd. Defect detecting method and defect detecting system
CN110824851B (en) * 2018-08-13 2021-06-29 台湾积体电路制造股份有限公司 Method for detecting cleanliness of photoetching equipment and reflection type photomask
US10830709B2 (en) * 2018-09-28 2020-11-10 Onto Innovation Inc. Interferometer with pixelated phase shift mask

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JPS594019A (en) 1982-06-30 1984-01-10 Fujitsu Ltd Comparing and inspecting method for pattern
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JP3515199B2 (en) * 1995-01-06 2004-04-05 大日本スクリーン製造株式会社 Defect inspection equipment
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US6895109B1 (en) * 1997-09-04 2005-05-17 Texas Instruments Incorporated Apparatus and method for automatically detecting defects on silicon dies on silicon wafers
US6252412B1 (en) 1999-01-08 2001-06-26 Schlumberger Technologies, Inc. Method of detecting defects in patterned substrates
US6563586B1 (en) * 1999-02-01 2003-05-13 Therma-Wave, Inc. Wafer metrology apparatus and method
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US6967711B2 (en) * 2004-03-09 2005-11-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
KR20040038756A (en) 2004-05-08
JP2004191973A (en) 2004-07-08
CN101520609A (en) 2009-09-02
TW200417824A (en) 2004-09-16
CN1501174A (en) 2004-06-02
TWI245169B (en) 2005-12-11
US20040130711A1 (en) 2004-07-08
US7307712B2 (en) 2007-12-11
DE60321525D1 (en) 2008-07-24

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