[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

SG11202005140RA - Polishing slurry composition for sti process - Google Patents

Polishing slurry composition for sti process

Info

Publication number
SG11202005140RA
SG11202005140RA SG11202005140RA SG11202005140RA SG11202005140RA SG 11202005140R A SG11202005140R A SG 11202005140RA SG 11202005140R A SG11202005140R A SG 11202005140RA SG 11202005140R A SG11202005140R A SG 11202005140RA SG 11202005140R A SG11202005140R A SG 11202005140RA
Authority
SG
Singapore
Prior art keywords
slurry composition
polishing slurry
sti process
sti
polishing
Prior art date
Application number
SG11202005140RA
Inventor
Hae Won Yang
Jun Ha Hwang
Jung Yoon Kim
Kwang Soo Park
Original Assignee
Kctech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kctech Co Ltd filed Critical Kctech Co Ltd
Publication of SG11202005140RA publication Critical patent/SG11202005140RA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/04Aqueous dispersions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11202005140RA 2017-12-20 2018-11-13 Polishing slurry composition for sti process SG11202005140RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020170176074A KR20190074597A (en) 2017-12-20 2017-12-20 Polishing slurry composition for sti process
PCT/KR2018/013763 WO2019124741A1 (en) 2017-12-20 2018-11-13 Polishing slurry composition for sti process

Publications (1)

Publication Number Publication Date
SG11202005140RA true SG11202005140RA (en) 2020-07-29

Family

ID=66994785

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202005140RA SG11202005140RA (en) 2017-12-20 2018-11-13 Polishing slurry composition for sti process

Country Status (6)

Country Link
US (1) US11384255B2 (en)
KR (1) KR20190074597A (en)
CN (1) CN111511856A (en)
SG (1) SG11202005140RA (en)
TW (1) TWI682979B (en)
WO (1) WO2019124741A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190074594A (en) * 2017-12-20 2019-06-28 주식회사 케이씨텍 Polishing slurry composition for sti process
KR20200076991A (en) * 2018-12-20 2020-06-30 주식회사 케이씨텍 Polishing slurry composition for sti process
KR102279324B1 (en) * 2018-12-21 2021-07-21 주식회사 케이씨텍 Polishing slurry composition
US20210115300A1 (en) 2019-10-22 2021-04-22 Cmc Materials, Inc. Composition and method for silicon oxide and carbon doped silicon oxide cmp
KR102316237B1 (en) * 2019-12-19 2021-10-25 주식회사 케이씨텍 Multi-selective polishing slurry composition
CN114621685A (en) * 2020-12-11 2022-06-14 安集微电子(上海)有限公司 Chemical mechanical polishing solution and use method thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6964923B1 (en) * 2000-05-24 2005-11-15 International Business Machines Corporation Selective polishing with slurries containing polyelectrolytes
KR100512134B1 (en) 2001-02-20 2005-09-02 히다치 가세고교 가부시끼가이샤 Polishing compound and method for polishing substrate
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US20090093118A1 (en) * 2005-04-14 2009-04-09 Showa Denko K.K. Polishing composition
EP1956642A4 (en) 2005-11-11 2011-04-06 Hitachi Chemical Co Ltd Polishing agent for silicon oxide, liquid additive, and method of polishing
JP4985409B2 (en) 2006-01-31 2012-07-25 日立化成工業株式会社 CMP polishing agent for polishing insulating film, polishing method, and semiconductor electronic component polished by the polishing method
CN101451047B (en) * 2007-11-30 2013-10-23 安集微电子(上海)有限公司 Chemico-mechanical polishing liquid
JP5220428B2 (en) * 2008-02-01 2013-06-26 株式会社フジミインコーポレーテッド Polishing method using polishing composition
TWI573864B (en) * 2012-03-14 2017-03-11 卡博特微電子公司 Cmp compositions selective for oxide and nitride with high removal rate and low defectivity
JP5822356B2 (en) * 2012-04-17 2015-11-24 花王株式会社 Polishing liquid composition for silicon wafer
KR101472858B1 (en) * 2012-11-07 2014-12-17 한양대학교 산학협력단 Environmentally friendly slurry for sti process and additive composition
JP2014216464A (en) * 2013-04-25 2014-11-17 日本キャボット・マイクロエレクトロニクス株式会社 Slurry composition and substrate polishing method
JP6306383B2 (en) * 2014-03-17 2018-04-04 日本キャボット・マイクロエレクトロニクス株式会社 Slurry composition and substrate polishing method

Also Published As

Publication number Publication date
TWI682979B (en) 2020-01-21
TW201927950A (en) 2019-07-16
CN111511856A (en) 2020-08-07
KR20190074597A (en) 2019-06-28
WO2019124741A1 (en) 2019-06-27
US20210079262A1 (en) 2021-03-18
US11384255B2 (en) 2022-07-12

Similar Documents

Publication Publication Date Title
PL3651707T3 (en) Composition for interface dressing
GB2571687B (en) Slurry design process
TWI561621B (en) Tungsten chemical-mechanical polishing composition
SG11202005140RA (en) Polishing slurry composition for sti process
SG11202005141UA (en) Polishing slurry composition for sti process
TWI561619B (en) Mixed abrasive tungsten cmp composition
EP3211053A4 (en) Composition for polishing
EP3253843A4 (en) Cmp composition for silicon nitride removal
SG10201600213YA (en) Method For Dressing Polishing Pads
SG11201609077VA (en) Composition for polishing silicon wafers
TWI561620B (en) Cmp slurry compositions and methods for aluminum polishing
PT3318115T (en) Machine for the treatment of pig slurry
SG11201803364WA (en) Polishing composition
SG11202004727UA (en) Polishing composition
SG11201706046PA (en) Polishing composition
PT3555152T (en) Method for grinding mineral material
SG11201803362VA (en) Polishing composition
SG11201906571TA (en) Polishing composition
SG11201912500PA (en) Polishing method
TWI799485B (en) Chemical mechanical polishing slurry
TWI799486B (en) Chemical mechanical polishing slurry
SG10201904669TA (en) Polishing Slurry Composition
SG11201804539YA (en) Method for double-side polishing wafer
PL3238823T3 (en) Grinding machine
SG10201600749RA (en) Abrasive grindstone