SG11202005140RA - Polishing slurry composition for sti process - Google Patents
Polishing slurry composition for sti processInfo
- Publication number
- SG11202005140RA SG11202005140RA SG11202005140RA SG11202005140RA SG11202005140RA SG 11202005140R A SG11202005140R A SG 11202005140RA SG 11202005140R A SG11202005140R A SG 11202005140RA SG 11202005140R A SG11202005140R A SG 11202005140RA SG 11202005140R A SG11202005140R A SG 11202005140RA
- Authority
- SG
- Singapore
- Prior art keywords
- slurry composition
- polishing slurry
- sti process
- sti
- polishing
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- 239000002002 slurry Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Composite Materials (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170176074A KR20190074597A (en) | 2017-12-20 | 2017-12-20 | Polishing slurry composition for sti process |
PCT/KR2018/013763 WO2019124741A1 (en) | 2017-12-20 | 2018-11-13 | Polishing slurry composition for sti process |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202005140RA true SG11202005140RA (en) | 2020-07-29 |
Family
ID=66994785
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202005140RA SG11202005140RA (en) | 2017-12-20 | 2018-11-13 | Polishing slurry composition for sti process |
Country Status (6)
Country | Link |
---|---|
US (1) | US11384255B2 (en) |
KR (1) | KR20190074597A (en) |
CN (1) | CN111511856A (en) |
SG (1) | SG11202005140RA (en) |
TW (1) | TWI682979B (en) |
WO (1) | WO2019124741A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190074594A (en) * | 2017-12-20 | 2019-06-28 | 주식회사 케이씨텍 | Polishing slurry composition for sti process |
KR20200076991A (en) * | 2018-12-20 | 2020-06-30 | 주식회사 케이씨텍 | Polishing slurry composition for sti process |
KR102279324B1 (en) * | 2018-12-21 | 2021-07-21 | 주식회사 케이씨텍 | Polishing slurry composition |
US20210115300A1 (en) | 2019-10-22 | 2021-04-22 | Cmc Materials, Inc. | Composition and method for silicon oxide and carbon doped silicon oxide cmp |
KR102316237B1 (en) * | 2019-12-19 | 2021-10-25 | 주식회사 케이씨텍 | Multi-selective polishing slurry composition |
CN114621685A (en) * | 2020-12-11 | 2022-06-14 | 安集微电子(上海)有限公司 | Chemical mechanical polishing solution and use method thereof |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6964923B1 (en) * | 2000-05-24 | 2005-11-15 | International Business Machines Corporation | Selective polishing with slurries containing polyelectrolytes |
KR100512134B1 (en) | 2001-02-20 | 2005-09-02 | 히다치 가세고교 가부시끼가이샤 | Polishing compound and method for polishing substrate |
US6974777B2 (en) * | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
US20090093118A1 (en) * | 2005-04-14 | 2009-04-09 | Showa Denko K.K. | Polishing composition |
EP1956642A4 (en) | 2005-11-11 | 2011-04-06 | Hitachi Chemical Co Ltd | Polishing agent for silicon oxide, liquid additive, and method of polishing |
JP4985409B2 (en) | 2006-01-31 | 2012-07-25 | 日立化成工業株式会社 | CMP polishing agent for polishing insulating film, polishing method, and semiconductor electronic component polished by the polishing method |
CN101451047B (en) * | 2007-11-30 | 2013-10-23 | 安集微电子(上海)有限公司 | Chemico-mechanical polishing liquid |
JP5220428B2 (en) * | 2008-02-01 | 2013-06-26 | 株式会社フジミインコーポレーテッド | Polishing method using polishing composition |
TWI573864B (en) * | 2012-03-14 | 2017-03-11 | 卡博特微電子公司 | Cmp compositions selective for oxide and nitride with high removal rate and low defectivity |
JP5822356B2 (en) * | 2012-04-17 | 2015-11-24 | 花王株式会社 | Polishing liquid composition for silicon wafer |
KR101472858B1 (en) * | 2012-11-07 | 2014-12-17 | 한양대학교 산학협력단 | Environmentally friendly slurry for sti process and additive composition |
JP2014216464A (en) * | 2013-04-25 | 2014-11-17 | 日本キャボット・マイクロエレクトロニクス株式会社 | Slurry composition and substrate polishing method |
JP6306383B2 (en) * | 2014-03-17 | 2018-04-04 | 日本キャボット・マイクロエレクトロニクス株式会社 | Slurry composition and substrate polishing method |
-
2017
- 2017-12-20 KR KR1020170176074A patent/KR20190074597A/en not_active IP Right Cessation
-
2018
- 2018-11-13 WO PCT/KR2018/013763 patent/WO2019124741A1/en active Application Filing
- 2018-11-13 US US16/954,350 patent/US11384255B2/en active Active
- 2018-11-13 SG SG11202005140RA patent/SG11202005140RA/en unknown
- 2018-11-13 CN CN201880082763.1A patent/CN111511856A/en active Pending
- 2018-12-19 TW TW107145981A patent/TWI682979B/en active
Also Published As
Publication number | Publication date |
---|---|
TWI682979B (en) | 2020-01-21 |
TW201927950A (en) | 2019-07-16 |
CN111511856A (en) | 2020-08-07 |
KR20190074597A (en) | 2019-06-28 |
WO2019124741A1 (en) | 2019-06-27 |
US20210079262A1 (en) | 2021-03-18 |
US11384255B2 (en) | 2022-07-12 |
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