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SG11201908555TA - Sputtering target and manufacturing method therefor - Google Patents

Sputtering target and manufacturing method therefor

Info

Publication number
SG11201908555TA
SG11201908555TA SG11201908555TA SG11201908555TA SG 11201908555T A SG11201908555T A SG 11201908555TA SG 11201908555T A SG11201908555T A SG 11201908555TA SG 11201908555T A SG11201908555T A SG 11201908555TA
Authority
SG
Singapore
Prior art keywords
sputtering target
manufacturing
method therefor
sputtering
target
Prior art date
Application number
Inventor
Tomio Otsuki
Yasushi Morii
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201908555TA publication Critical patent/SG11201908555TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/01—Alloys based on copper with aluminium as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/05—Alloys based on copper with manganese as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR A sputtering target according to one embodiment is an integrated sputtering target comprising a target portion and a backing plate portion, both of them being made of copper and unavoidable impurities, wherein a Vickers hardness Hv is 90 or more, and wherein a flat ratio of crystal grains in a cross section orthogonal to a sputtering surface is 0.35 or more and 0.65 or less. Fig. 1
SG11201908555T 2017-03-30 2018-03-16 Sputtering target and manufacturing method therefor SG11201908555TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017068457 2017-03-30
JP2018040212 2018-03-06
PCT/JP2018/010629 WO2018180645A1 (en) 2017-03-30 2018-03-16 Sputtering target and manufacturing method therefor

Publications (1)

Publication Number Publication Date
SG11201908555TA true SG11201908555TA (en) 2019-10-30

Family

ID=63675794

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201908555T SG11201908555TA (en) 2017-03-30 2018-03-16 Sputtering target and manufacturing method therefor

Country Status (8)

Country Link
US (2) US11718907B2 (en)
EP (1) EP3604611B1 (en)
JP (1) JP7018055B2 (en)
KR (2) KR20190045315A (en)
CN (1) CN109983149A (en)
SG (1) SG11201908555TA (en)
TW (1) TWI663274B (en)
WO (1) WO2018180645A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7380550B2 (en) * 2018-12-13 2023-11-15 三菱マテリアル株式会社 pure copper plate
CN111705276B (en) * 2020-07-01 2022-05-27 宁波江丰电子材料股份有限公司 Ultra-pure copper-manganese alloy and treatment method thereof
CN112063976B (en) * 2020-09-11 2022-08-30 宁波江丰电子材料股份有限公司 Ultrahigh-purity copper target material and grain control method thereof
CN112921287B (en) * 2021-01-22 2022-10-28 宁波江丰电子材料股份有限公司 Ultrahigh-purity copper target material and grain orientation control method thereof
CN113046705B (en) * 2021-03-16 2022-08-16 宁波江丰电子材料股份有限公司 Copper target material and preparation method and application thereof
CN113894234A (en) * 2021-09-27 2022-01-07 宁波江丰电子材料股份有限公司 Preparation method of cooling back plate
CN115896538B (en) * 2022-10-27 2024-04-26 中色正锐(山东)铜业有限公司 High-performance copper-nickel-silicon-chromium alloy plate and processing method and application thereof

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JPS5277808A (en) 1976-07-28 1977-06-30 Nippon Piston Ring Co Ltd Sintered ferroalloy for manufacturing valve seat
DE2706328A1 (en) * 1977-02-15 1978-08-17 Glyco Metall Werke PROCESS AND DEVICE FOR CONTINUOUS MANUFACTURING OF A PRESSURE-RESISTANT LAMINATED MATERIAL WITH METALLIC OR NON-METALLIC CARRIER MATERIAL AND A PLASTIC LAYER APPLIED TO IT
JP3975414B2 (en) * 1997-11-28 2007-09-12 日立金属株式会社 Sputtering copper target and method for producing the same
JP2001049426A (en) 1999-07-08 2001-02-20 Praxair St Technol Inc Manufacture of copper sputtering target, and assembly of copper sputtering target and backing plate
US20040072009A1 (en) 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
WO2003064722A1 (en) 2002-01-30 2003-08-07 Nikko Materials Company, Limited Copper alloy sputtering target and method for manufacturing the target
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JP5464352B2 (en) 2010-03-05 2014-04-09 三菱マテリアル株式会社 Method for producing high purity copper processed material having uniform and fine crystal structure
JP5520746B2 (en) 2010-08-24 2014-06-11 古河電気工業株式会社 Copper material for sputtering target and method for producing the same
JP5787647B2 (en) 2011-07-08 2015-09-30 古河電気工業株式会社 Method for producing copper material for sputtering target
KR20160030588A (en) 2011-09-14 2016-03-18 제이엑스 킨조쿠 가부시키가이샤 High-purity copper-manganese-alloy sputtering target
EP2733235B1 (en) 2011-09-30 2017-05-03 JX Nippon Mining & Metals Corporation Sputtering target and manufacturing method therefor
KR101645834B1 (en) * 2012-01-12 2016-08-04 제이엑스금속주식회사 High-purity copper sputtering target
US9165750B2 (en) * 2012-01-23 2015-10-20 Jx Nippon Mining & Metals Corporation High purity copper—manganese alloy sputtering target
JP2013253309A (en) 2012-06-08 2013-12-19 Sh Copper Products Co Ltd Cu-Mn ALLOY SPUTTERING TARGET, LAMINATED WIRING OF SEMICONDUCTOR ELEMENT USING THE SAME, AND METHOD FOR MANUFACTURING LAMINATED WIRING
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JP5612147B2 (en) * 2013-03-11 2014-10-22 三菱マテリアル株式会社 Silver alloy sputtering target for forming conductive film and method for producing the same
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JP6308278B2 (en) * 2016-10-07 2018-04-11 三菱マテリアル株式会社 Hot extrusion material for cylindrical sputtering target and method for manufacturing cylindrical sputtering target

Also Published As

Publication number Publication date
KR102362400B1 (en) 2022-02-14
TW201837216A (en) 2018-10-16
EP3604611C0 (en) 2024-09-11
TWI663274B (en) 2019-06-21
JPWO2018180645A1 (en) 2020-02-13
US11718907B2 (en) 2023-08-08
JP7018055B2 (en) 2022-02-17
KR20210005328A (en) 2021-01-13
CN109983149A (en) 2019-07-05
WO2018180645A1 (en) 2018-10-04
US20230349035A1 (en) 2023-11-02
EP3604611A1 (en) 2020-02-05
EP3604611B1 (en) 2024-09-11
KR20190045315A (en) 2019-05-02
US20200032385A1 (en) 2020-01-30
EP3604611A4 (en) 2021-02-17

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