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SG11201900068PA - Single crystal silicon plate-shaped body and production method therefor - Google Patents

Single crystal silicon plate-shaped body and production method therefor

Info

Publication number
SG11201900068PA
SG11201900068PA SG11201900068PA SG11201900068PA SG11201900068PA SG 11201900068P A SG11201900068P A SG 11201900068PA SG 11201900068P A SG11201900068P A SG 11201900068PA SG 11201900068P A SG11201900068P A SG 11201900068PA SG 11201900068P A SG11201900068P A SG 11201900068PA
Authority
SG
Singapore
Prior art keywords
single crystal
crystal silicon
shaped body
silicon plate
ppma
Prior art date
Application number
SG11201900068PA
Inventor
Isao Masada
Shoji Tachibana
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of SG11201900068PA publication Critical patent/SG11201900068PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/64—Flat crystals, e.g. plates, strips or discs
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

SINGLE CRYSTAL SILICON PLATE-SHAPED BODY AND PRODUCTION METHOD THEREFOR An object of the invention is to develop a single crystal silicon that becomes such a high-performance device as a solar cell or a power device in which decrease in lifetime is suppressed even if heating treatment from 800°C to 1100°C performed in a device production process is applied in a single crystal silicon plate-shaped body having a high oxygen concentration. Provided is a single crystal silicon plate-shaped body as cut out from an upper portion of a straight body portion of a CZ method single crystal silicon ingot in which an interstitial oxygen concentration in a crystal is 25 ppma to 45 ppma and a substitutional carbon concentration is 0.5 ppma or less in a radial center, wherein in the radial center, oxygen precipitates are not observed in a bulk in an image of 200,000 times by means of a transmission electron microscope, and after heating the single crystal silicon plate-shaped body at 950°C for 60 minutes, oxygen precipitates are observed in an image of the 200,000 times, and a shape of the oxygen precipitates is observed in a polyhedral structure in an image of 2,000,000 times. (Fig.1)
SG11201900068PA 2016-07-06 2017-06-30 Single crystal silicon plate-shaped body and production method therefor SG11201900068PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016134375 2016-07-06
PCT/JP2017/024235 WO2018008561A1 (en) 2016-07-06 2017-06-30 Single crystal silicon plate-shaped body and production method therefor

Publications (1)

Publication Number Publication Date
SG11201900068PA true SG11201900068PA (en) 2019-02-27

Family

ID=60912812

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201900068PA SG11201900068PA (en) 2016-07-06 2017-06-30 Single crystal silicon plate-shaped body and production method therefor

Country Status (8)

Country Link
US (1) US10975496B2 (en)
JP (1) JP6484762B2 (en)
KR (1) KR102032535B1 (en)
CN (1) CN109477240B (en)
DE (1) DE112017003436T5 (en)
SG (1) SG11201900068PA (en)
TW (1) TWI732898B (en)
WO (1) WO2018008561A1 (en)

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Publication number Priority date Publication date Assignee Title
JP6645545B1 (en) * 2018-09-03 2020-02-14 株式会社Sumco Method for evaluating carbon concentration of silicon sample, method for evaluating silicon wafer manufacturing process, method for manufacturing silicon wafer, and method for manufacturing silicon single crystal ingot
JP6979007B2 (en) * 2018-12-17 2021-12-08 グローバルウェーハズ・ジャパン株式会社 Ultra-low oxygen concentration measurement method for silicon wafers
US11885036B2 (en) 2019-08-09 2024-01-30 Leading Edge Equipment Technologies, Inc. Producing a ribbon or wafer with regions of low oxygen concentration
CN115148858B (en) * 2022-08-01 2024-06-11 安徽华晟新能源科技有限公司 Passivation method of silicon solar cell

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Also Published As

Publication number Publication date
WO2018008561A1 (en) 2018-01-11
DE112017003436T5 (en) 2019-03-21
CN109477240B (en) 2019-12-27
TWI732898B (en) 2021-07-11
JPWO2018008561A1 (en) 2018-11-29
KR102032535B1 (en) 2019-10-15
US20190161888A1 (en) 2019-05-30
CN109477240A (en) 2019-03-15
JP6484762B2 (en) 2019-03-13
KR20190007502A (en) 2019-01-22
TW201816201A (en) 2018-05-01
US10975496B2 (en) 2021-04-13

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