SG11201803341QA - Composite structure and associated production method - Google Patents
Composite structure and associated production methodInfo
- Publication number
- SG11201803341QA SG11201803341QA SG11201803341QA SG11201803341QA SG11201803341QA SG 11201803341Q A SG11201803341Q A SG 11201803341QA SG 11201803341Q A SG11201803341Q A SG 11201803341QA SG 11201803341Q A SG11201803341Q A SG 11201803341QA SG 11201803341Q A SG11201803341Q A SG 11201803341QA
- Authority
- SG
- Singapore
- Prior art keywords
- production method
- composite structure
- associated production
- composite
- production
- Prior art date
Links
- 239000002131 composite material Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02133—Means for compensation or elimination of undesirable effects of stress
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/101—Piezoelectric or electrostrictive devices with electrical and mechanical input and output, e.g. having combined actuator and sensor parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1559994A FR3042647B1 (en) | 2015-10-20 | 2015-10-20 | COMPOSITE STRUCTURE AND METHOD OF MANUFACTURING THE SAME |
| PCT/FR2016/052675 WO2017068270A1 (en) | 2015-10-20 | 2016-10-17 | Composite structure and associated production method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201803341QA true SG11201803341QA (en) | 2018-05-30 |
Family
ID=54708030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201803341QA SG11201803341QA (en) | 2015-10-20 | 2016-10-17 | Composite structure and associated production method |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20180316329A1 (en) |
| EP (1) | EP3365927B1 (en) |
| JP (1) | JP6923518B2 (en) |
| KR (1) | KR102671257B1 (en) |
| CN (2) | CN108271425A (en) |
| FR (1) | FR3042647B1 (en) |
| SG (1) | SG11201803341QA (en) |
| WO (1) | WO2017068270A1 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3068508B1 (en) * | 2017-06-30 | 2019-07-26 | Soitec | METHOD OF TRANSFERRING A THIN LAYER TO A SUPPORT SUBSTRATE HAVING DIFFERENT THERMAL EXPANSION COEFFICIENTS |
| FR3076126A1 (en) * | 2017-12-26 | 2019-06-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | METHOD FOR PRODUCING ACOUSTIC RESONATOR WITH VOLUME VOLUME WITH REDUCED PARASITE CAPACITY |
| FR3079346B1 (en) * | 2018-03-26 | 2020-05-29 | Soitec | METHOD FOR MANUFACTURING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING SUCH A PIEZOELECTRIC LAYER |
| CN113544546B (en) | 2019-03-29 | 2023-11-10 | 深圳帧观德芯科技有限公司 | Semiconductor X-ray Detector |
| US11750172B2 (en) | 2019-08-21 | 2023-09-05 | Skyworks Solutions, Inc. | Multilayer piezoelectric substrate |
| US11722122B2 (en) | 2019-11-22 | 2023-08-08 | Skyworks Solutions, Inc. | Multilayer piezoelectric substrate with high density electrode |
| CN111883644B (en) * | 2020-07-23 | 2021-04-13 | 中国科学院上海微系统与信息技术研究所 | Heterogeneous piezoelectric thin film structure and preparation method thereof |
| GB2598665A (en) * | 2020-09-04 | 2022-03-09 | Skyworks Solutions Inc | Multi-layer piezoelectric substrate with controllable delta temperature coefficient of frequency |
| EP3989299A1 (en) * | 2020-10-26 | 2022-04-27 | Université de Franche-Comté | Piezoelectric device comprising flexible single crystalline piezoelectric linbo3 and/or litao3 films integrated on flexible substrate and methods for producing the same |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW219354B (en) * | 1993-05-31 | 1994-01-21 | Ind Tech Res Inst | Strengthening of multi-layer ceramic/glass articles |
| JPH10297931A (en) * | 1997-04-24 | 1998-11-10 | Matsushita Electric Ind Co Ltd | Production of composite piezoelectric substrate |
| TW449937B (en) * | 1999-02-26 | 2001-08-11 | Matsushita Electronics Corp | Semiconductor device and the manufacturing method thereof |
| FR2816445B1 (en) * | 2000-11-06 | 2003-07-25 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING A STACKED STRUCTURE COMPRISING A THIN LAYER ADHERING TO A TARGET SUBSTRATE |
| JP3815424B2 (en) * | 2002-11-08 | 2006-08-30 | 株式会社村田製作所 | Boundary acoustic wave device |
| FR2856192B1 (en) * | 2003-06-11 | 2005-07-29 | Soitec Silicon On Insulator | METHOD FOR PRODUCING HETEROGENEOUS STRUCTURE AND STRUCTURE OBTAINED BY SUCH A METHOD |
| US7486001B2 (en) * | 2004-01-19 | 2009-02-03 | Murata Manufacturing Co., Ltd. | Boundary acoustic wave device |
| JP4957723B2 (en) * | 2006-06-02 | 2012-06-20 | 株式会社村田製作所 | Multilayer ceramic substrate, method for manufacturing the same, and electronic component |
| US7608986B2 (en) * | 2006-10-02 | 2009-10-27 | Seiko Epson Corporation | Quartz crystal resonator |
| WO2008078481A1 (en) * | 2006-12-25 | 2008-07-03 | Murata Manufacturing Co., Ltd. | Elastic boundary-wave device |
| US7408286B1 (en) * | 2007-01-17 | 2008-08-05 | Rf Micro Devices, Inc. | Piezoelectric substrate for a saw device |
| WO2008126486A1 (en) * | 2007-04-09 | 2008-10-23 | Murata Manufacturing Co., Ltd. | Dielectric ceramic composition, ceramic substrate, and method for producing the same |
| JP2009124696A (en) * | 2007-10-26 | 2009-06-04 | Panasonic Electric Works Co Ltd | Resonance device |
| WO2009069398A1 (en) * | 2007-11-30 | 2009-06-04 | Murata Manufacturing Co., Ltd. | Ceramic composite multilayer substrate, method for manufacturing ceramic composite multilayer substrate and electronic component |
| JP5182367B2 (en) * | 2008-05-15 | 2013-04-17 | 株式会社村田製作所 | Multilayer ceramic substrate and manufacturing method thereof |
| FR2942911B1 (en) * | 2009-03-09 | 2011-05-13 | Soitec Silicon On Insulator | METHOD FOR PRODUCING A HETEROSTRUCTURE WITH LOCAL ADAPTATION OF THERMAL EXPANSION COEFFICIENT |
| DE112014000888T5 (en) * | 2013-02-19 | 2015-11-26 | Ngk Insulators, Ltd. | Composite substrate, elastic wave device and method of manufacturing an elastic wave device |
| JP6242597B2 (en) * | 2013-06-03 | 2017-12-06 | 太陽誘電株式会社 | Elastic wave device and manufacturing method thereof |
| US9691680B2 (en) * | 2014-04-10 | 2017-06-27 | Sensor Electronic Technology, Inc. | Structured substrate |
-
2015
- 2015-10-20 FR FR1559994A patent/FR3042647B1/en active Active
-
2016
- 2016-10-17 JP JP2018520170A patent/JP6923518B2/en active Active
- 2016-10-17 US US15/769,698 patent/US20180316329A1/en active Pending
- 2016-10-17 CN CN201680065643.1A patent/CN108271425A/en active Pending
- 2016-10-17 EP EP16798236.2A patent/EP3365927B1/en active Active
- 2016-10-17 SG SG11201803341QA patent/SG11201803341QA/en unknown
- 2016-10-17 WO PCT/FR2016/052675 patent/WO2017068270A1/en active Application Filing
- 2016-10-17 CN CN202210146142.3A patent/CN114512595A/en active Pending
- 2016-10-17 KR KR1020187014265A patent/KR102671257B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180074732A (en) | 2018-07-03 |
| JP2018537888A (en) | 2018-12-20 |
| JP6923518B2 (en) | 2021-08-18 |
| EP3365927A1 (en) | 2018-08-29 |
| WO2017068270A1 (en) | 2017-04-27 |
| EP3365927B1 (en) | 2021-03-24 |
| CN114512595A (en) | 2022-05-17 |
| US20180316329A1 (en) | 2018-11-01 |
| FR3042647B1 (en) | 2017-12-01 |
| FR3042647A1 (en) | 2017-04-21 |
| KR102671257B1 (en) | 2024-06-03 |
| CN108271425A (en) | 2018-07-10 |
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