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SG11201610330TA - Tungsten chemical-mechanical polishing composition - Google Patents

Tungsten chemical-mechanical polishing composition

Info

Publication number
SG11201610330TA
SG11201610330TA SG11201610330TA SG11201610330TA SG11201610330TA SG 11201610330T A SG11201610330T A SG 11201610330TA SG 11201610330T A SG11201610330T A SG 11201610330TA SG 11201610330T A SG11201610330T A SG 11201610330TA SG 11201610330T A SG11201610330T A SG 11201610330TA
Authority
SG
Singapore
Prior art keywords
mechanical polishing
polishing composition
tungsten chemical
tungsten
chemical
Prior art date
Application number
SG11201610330TA
Other languages
English (en)
Inventor
Lin Fu
Steven Grumbine
Jeffrey Dysard
Tina Li
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG11201610330TA publication Critical patent/SG11201610330TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201610330TA 2014-06-25 2015-06-25 Tungsten chemical-mechanical polishing composition SG11201610330TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462017002P 2014-06-25 2014-06-25
US201462017100P 2014-06-25 2014-06-25
PCT/US2015/037767 WO2015200679A1 (en) 2014-06-25 2015-06-25 Tungsten chemical-mechanical polishing composition

Publications (1)

Publication Number Publication Date
SG11201610330TA true SG11201610330TA (en) 2017-01-27

Family

ID=54929830

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201610330TA SG11201610330TA (en) 2014-06-25 2015-06-25 Tungsten chemical-mechanical polishing composition

Country Status (8)

Country Link
US (1) US9567491B2 (ja)
EP (1) EP3161098B1 (ja)
JP (1) JP6612789B2 (ja)
KR (2) KR20230003286A (ja)
CN (1) CN106661430B (ja)
SG (1) SG11201610330TA (ja)
TW (1) TWI561621B (ja)
WO (1) WO2015200679A1 (ja)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US9534148B1 (en) * 2015-12-21 2017-01-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
US10066126B2 (en) * 2016-01-06 2018-09-04 Cabot Microelectronics Corporation Tungsten processing slurry with catalyst
JP6737894B2 (ja) * 2016-03-01 2020-08-12 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド ケミカルメカニカルポリッシング方法
KR20180117609A (ko) * 2016-03-01 2018-10-29 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 기판의 화학 기계적 연마 방법
US9803108B1 (en) * 2016-10-19 2017-10-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous compositions of stabilized aminosilane group containing silica particles
US10037889B1 (en) * 2017-03-29 2018-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films
US10600655B2 (en) * 2017-08-10 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US20190085209A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation Composition for tungsten cmp
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US20190211228A1 (en) * 2018-01-09 2019-07-11 Cabot Microelectronics Corporation Tungsten bulk polishing method with improved topography
KR102005963B1 (ko) * 2018-05-26 2019-07-31 에스케이이노베이션 주식회사 식각액 조성물 및 실란화합물
US10995238B2 (en) 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten
US11111435B2 (en) 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
JP7028120B2 (ja) * 2018-09-20 2022-03-02 Jsr株式会社 化学機械研磨用水系分散体及びその製造方法、並びに化学機械研磨方法
CN111378373A (zh) * 2018-12-28 2020-07-07 安集微电子（上海）有限公司 一种用于抛光钨的化学机械抛光液
CN111378375B (zh) * 2018-12-28 2022-05-13 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
US10604678B1 (en) * 2019-02-08 2020-03-31 Rohrn and Haas Electronic Materials CMP Holdings, Inc. Chemical mechanical polishing of tungsten using a method and composition containing quaternary phosphonium compounds
WO2020196542A1 (ja) * 2019-03-27 2020-10-01 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法および基板の製造方法
WO2020245904A1 (ja) * 2019-06-04 2020-12-10 昭和電工マテリアルズ株式会社 研磨液、分散体、研磨液の製造方法及び研磨方法
JP2022543885A (ja) * 2019-08-09 2022-10-14 ビーエーエスエフ ソシエタス・ヨーロピア タングステンエッチング抑制用組成物及び方法
JP7351697B2 (ja) * 2019-09-30 2023-09-27 日揮触媒化成株式会社 シリカ粒子分散液及びその製造方法
TWI853105B (zh) * 2019-12-03 2024-08-21 日商Ｊｓｒ股份有限公司 化學機械研磨用組成物及化學機械研磨方法
CN113004800B (zh) * 2019-12-20 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
KR20210079573A (ko) * 2019-12-20 2021-06-30 주식회사 케이씨텍 유기막 연마용 슬러리 조성물
CN113122141B (zh) * 2019-12-30 2024-08-02 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN113122140B (zh) * 2019-12-30 2024-05-03 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
TWI769619B (zh) * 2020-01-07 2022-07-01 美商Ｃｍｃ材料股份有限公司 經衍生的聚胺基酸
KR20210095465A (ko) 2020-01-23 2021-08-02 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR102623640B1 (ko) * 2020-07-22 2024-01-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR102678848B1 (ko) * 2020-10-14 2024-06-26 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
CN113604154B (zh) * 2021-07-09 2022-07-12 万华化学集团电子材料有限公司 一种钨插塞化学机械抛光液、制备方法及其应用
KR102638622B1 (ko) * 2021-07-22 2024-02-19 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 반도체 소자의 제조 방법
WO2023007722A1 (ja) * 2021-07-30 2023-02-02 昭和電工マテリアルズ株式会社 研磨液及び研磨方法
WO2023171290A1 (ja) * 2022-03-08 2023-09-14 株式会社フジミインコーポレーテッド 研磨用組成物
WO2023178286A1 (en) * 2022-03-18 2023-09-21 Merck Patent Gmbh Chemical mechanical planarization using amino-polyorganosiloxane-coated abrasives

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
DE69734868T2 (de) 1996-07-25 2006-08-03 Dupont Air Products Nanomaterials L.L.C., Tempe Zusammensetzung und verfahren zum chemisch-mechanischen polieren
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
WO2001004226A2 (en) * 1999-07-07 2001-01-18 Cabot Microelectronics Corporation Cmp composition containing silane modified abrasive particles
US7077880B2 (en) 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US6776810B1 (en) 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7022255B2 (en) * 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
WO2007018069A1 (ja) * 2005-08-10 2007-02-15 Catalysts & Chemicals Industries Co., Ltd. 異形シリカゾルおよびその製造方法
US8106229B2 (en) 2006-05-30 2012-01-31 Nalco Company Organically modifid silica and use thereof
TW200817497A (en) * 2006-08-14 2008-04-16 Nippon Chemical Ind Polishing composition for semiconductor wafer, production method thereof, and polishing method
JP5275595B2 (ja) * 2007-08-29 2013-08-28 日本化学工業株式会社 半導体ウエハ研磨用組成物および研磨方法
EP2188344B1 (en) 2007-09-21 2016-04-27 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
MY147729A (en) 2007-09-21 2013-01-15 Cabot Microelectronics Corp Polishing composition and method utilizing abrasive particles treated with an aminosilane
JP5428205B2 (ja) * 2008-06-04 2014-02-26 日立化成株式会社 金属用研磨液
KR101247890B1 (ko) * 2008-09-19 2013-03-26 캐보트 마이크로일렉트로닉스 코포레이션 저-ｋ 유전체를 위한 장벽 슬러리
WO2010035613A1 (ja) * 2008-09-26 2010-04-01 扶桑化学工業株式会社 屈曲構造及び／又は分岐構造を持つシリカ二次粒子を含有するコロイダルシリカ及びその製造方法
WO2010085324A1 (en) * 2009-01-20 2010-07-29 Cabot Corporation Compositons comprising silane modified metal oxides
JP2011216582A (ja) 2010-03-31 2011-10-27 Fujifilm Corp 研磨方法、および研磨液
KR101243331B1 (ko) 2010-12-17 2013-03-13 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법
US8980122B2 (en) * 2011-07-08 2015-03-17 General Engineering & Research, L.L.C. Contact release capsule useful for chemical mechanical planarization slurry
KR101349758B1 (ko) 2011-12-26 2014-01-10 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법
JP5972660B2 (ja) 2012-03-28 2016-08-17 株式会社アドマテックス コロイドシリカの製造方法及びｃｍｐ用スラリーの製造方法

Also Published As

Publication number Publication date
JP6612789B2 (ja) 2019-11-27
KR20170026491A (ko) 2017-03-08
TW201612285A (en) 2016-04-01
TWI561621B (en) 2016-12-11
KR102511928B1 (ko) 2023-03-20
US9567491B2 (en) 2017-02-14
EP3161098A1 (en) 2017-05-03
CN106661430B (zh) 2019-03-19
WO2015200679A1 (en) 2015-12-30
US20150376462A1 (en) 2015-12-31
KR20230003286A (ko) 2023-01-05
EP3161098B1 (en) 2022-10-26
EP3161098A4 (en) 2018-07-11
CN106661430A (zh) 2017-05-10
JP2017524767A (ja) 2017-08-31

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