SG11201506362UA - Apparatus and methods for photo-excitation processes - Google Patents
Apparatus and methods for photo-excitation processesInfo
- Publication number
- SG11201506362UA SG11201506362UA SG11201506362UA SG11201506362UA SG11201506362UA SG 11201506362U A SG11201506362U A SG 11201506362UA SG 11201506362U A SG11201506362U A SG 11201506362UA SG 11201506362U A SG11201506362U A SG 11201506362UA SG 11201506362U A SG11201506362U A SG 11201506362UA
- Authority
- SG
- Singapore
- Prior art keywords
- photo
- methods
- excitation processes
- excitation
- processes
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/28—Deposition of only one other non-metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Fluid Mechanics (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361791041P | 2013-03-15 | 2013-03-15 | |
| US14/186,837 US9499909B2 (en) | 2013-03-15 | 2014-02-21 | Methods for photo-excitation of precursors in epitaxial processes using a rotary scanning unit |
| PCT/US2014/018090 WO2014149394A1 (en) | 2013-03-15 | 2014-02-24 | Apparatus and methods for photo-excitation processes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201506362UA true SG11201506362UA (en) | 2015-09-29 |
Family
ID=51528945
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201506362UA SG11201506362UA (en) | 2013-03-15 | 2014-02-24 | Apparatus and methods for photo-excitation processes |
| SG10201710653TA SG10201710653TA (en) | 2013-03-15 | 2014-02-24 | Apparatus and methods for photo-excitation processes |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201710653TA SG10201710653TA (en) | 2013-03-15 | 2014-02-24 | Apparatus and methods for photo-excitation processes |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9499909B2 (en) |
| KR (2) | KR101840319B1 (en) |
| CN (2) | CN105027261B (en) |
| SG (2) | SG11201506362UA (en) |
| TW (2) | TWI595539B (en) |
| WO (1) | WO2014149394A1 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10179948B2 (en) * | 2014-04-24 | 2019-01-15 | United Technologies Corporation | Method and system for controlling coating in non-line-of-sight locations |
| TWI692047B (en) * | 2015-10-09 | 2020-04-21 | 美商應用材料股份有限公司 | Diode laser for wafer heating for epi processes |
| KR101705696B1 (en) * | 2015-11-12 | 2017-02-13 | 한국광기술원 | 3D printer |
| CN107378231B (en) * | 2017-08-21 | 2019-06-07 | 英诺激光科技股份有限公司 | The method for preparing metal structure in transparent material surface using metal nano prepared Chinese ink |
| KR102447189B1 (en) * | 2018-03-02 | 2022-09-26 | 에이에스엠엘 네델란즈 비.브이. | Method and apparatus for forming a patterned layer of material |
| WO2019217180A1 (en) * | 2018-05-08 | 2019-11-14 | Lam Research Corporation | Atomic layer etch and deposition processing systems including a lens circuit with a tele-centric lens, an optical beam folding assembly, or a polygon scanner |
| US11348784B2 (en) | 2019-08-12 | 2022-05-31 | Beijing E-Town Semiconductor Technology Co., Ltd | Enhanced ignition in inductively coupled plasmas for workpiece processing |
| US20220238337A1 (en) * | 2021-01-22 | 2022-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Laser-Assisted Epitaxy and Etching for Manufacturing Integrated Circuits |
| KR102554574B1 (en) * | 2023-02-06 | 2023-07-12 | 주식회사 트리버스시스템 | Directional surface heating device for enhanced adhesion of physical vapor deposition |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3271180A (en) | 1962-06-19 | 1966-09-06 | Ibm | Photolytic processes for fabricating thin film patterns |
| US4340617A (en) | 1980-05-19 | 1982-07-20 | Massachusetts Institute Of Technology | Method and apparatus for depositing a material on a surface |
| JPH0712056B2 (en) * | 1985-04-15 | 1995-02-08 | 株式会社日立製作所 | LSI wiring connection method and device |
| US4748045A (en) | 1986-04-09 | 1988-05-31 | Massachusetts Institute Of Technology | Method and apparatus for photodeposition of films on surfaces |
| EP0306069A3 (en) | 1987-08-31 | 1990-12-27 | Koninklijke Philips Electronics N.V. | A method of forming an oxide layer on a substrate |
| US4843030A (en) | 1987-11-30 | 1989-06-27 | Eaton Corporation | Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes |
| USH1264H (en) | 1988-04-04 | 1993-12-07 | Xerox Corporation | Method of in situ stoiciometric and geometrical photo induced modifications to compound thin films during epitaxial growth and applications thereof |
| US5017317A (en) | 1989-12-04 | 1991-05-21 | Board Of Regents, The Uni. Of Texas System | Gas phase selective beam deposition |
| DE4306921A1 (en) | 1993-03-05 | 1994-09-08 | Bosch Gmbh Robert | Booster pump for a hydraulic system |
| DE69421463T2 (en) * | 1993-07-30 | 2000-02-10 | Applied Materials, Inc. | Deposit of silicon nitride |
| TW314666B (en) | 1994-05-31 | 1997-09-01 | Ibm | |
| WO1996020519A1 (en) | 1994-12-28 | 1996-07-04 | Italtel Societa' Italiana Telecomunicazioni S.P.A. | A coupling arrangement between a multi-mode light source and an optical fiber through an intermediate optical fiber length |
| US5650361A (en) | 1995-11-21 | 1997-07-22 | The Aerospace Corporation | Low temperature photolytic deposition of aluminum nitride thin films |
| US5786023A (en) * | 1996-02-13 | 1998-07-28 | Maxwell; James L. | Method and apparatus for the freeform growth of three-dimensional structures using pressurized precursor flows and growth rate control |
| US6278809B1 (en) | 1997-05-30 | 2001-08-21 | Ion Optics, Inc. | Fiber optic reflectance apparatus for in situ characterization of thin films |
| US6324326B1 (en) | 1999-08-20 | 2001-11-27 | Corning Incorporated | Tapered fiber laser |
| US6788445B2 (en) * | 2002-01-14 | 2004-09-07 | Applied Materials, Inc. | Multi-beam polygon scanning system |
| US7005601B2 (en) * | 2002-04-18 | 2006-02-28 | Applied Materials, Inc. | Thermal flux processing by scanning |
| JP2004153188A (en) * | 2002-10-31 | 2004-05-27 | Applied Materials Inc | Silicon-germanium epitaxial-growth method |
| JP4623942B2 (en) * | 2003-06-24 | 2011-02-02 | 株式会社Ｉｈｉ | Compound semiconductor growth equipment |
| US7396743B2 (en) | 2004-06-10 | 2008-07-08 | Singh Kaushal K | Low temperature epitaxial growth of silicon-containing films using UV radiation |
| EP1771599B1 (en) * | 2004-07-30 | 2007-11-14 | Lpe Spa | Epitaxial reactor with susceptor controlled positioning |
| JP2009514015A (en) | 2005-10-27 | 2009-04-02 | ヒューレット−パッカード デベロップメント カンパニー エル．ピー． | Apparatus and method for scanning light using an array of light sources |
| US7795154B2 (en) * | 2006-08-25 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device that uses laser ablation, to selectively remove one or more material layers |
| US7688491B2 (en) | 2006-09-15 | 2010-03-30 | Ricoh Company, Ltd. | Diffractive-optical element, scanning optical system, optical scanner, and image forming apparatus |
| US7976634B2 (en) * | 2006-11-21 | 2011-07-12 | Applied Materials, Inc. | Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems |
| CN101535530A (en) * | 2006-11-21 | 2009-09-16 | 应用材料股份有限公司 | Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems |
| WO2009085772A2 (en) * | 2007-12-20 | 2009-07-09 | The Regents Of The University Of California | Laser-assisted nanomaterial deposition, nanomanufacturing, in situ monitoring and associated apparatus |
| KR101023645B1 (en) | 2008-09-02 | 2011-03-22 | 에이피시스템 주식회사 | Apparatus for Light Induced Chemical Vapor Deposition |
| JP5403212B2 (en) * | 2008-10-06 | 2014-01-29 | 株式会社Ｉｈｉ | White LED manufacturing apparatus and method |
| US20120234238A1 (en) * | 2011-03-18 | 2012-09-20 | Wei-Yung Hsu | Integrated metrology for wafer screening |
| WO2013109328A2 (en) | 2011-10-27 | 2013-07-25 | Applied Materials, Inc. | Laser crystallization and polycrystal efficiency improvement for thin film solar |
-
2014
- 2014-02-21 US US14/186,837 patent/US9499909B2/en active Active
- 2014-02-24 WO PCT/US2014/018090 patent/WO2014149394A1/en active Application Filing
- 2014-02-24 CN CN201480011573.2A patent/CN105027261B/en active Active
- 2014-02-24 KR KR1020157029257A patent/KR101840319B1/en active Application Filing
- 2014-02-24 KR KR1020187007125A patent/KR20180030256A/en not_active Application Discontinuation
- 2014-02-24 CN CN201710618726.5A patent/CN107574420A/en active Pending
- 2014-02-24 SG SG11201506362UA patent/SG11201506362UA/en unknown
- 2014-02-24 SG SG10201710653TA patent/SG10201710653TA/en unknown
- 2014-03-12 TW TW103108697A patent/TWI595539B/en not_active IP Right Cessation
- 2014-03-12 TW TW106122326A patent/TWI676207B/en active
-
2016
- 2016-11-22 US US15/359,090 patent/US10370762B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US9499909B2 (en) | 2016-11-22 |
| CN105027261B (en) | 2018-09-21 |
| CN105027261A (en) | 2015-11-04 |
| US20140273416A1 (en) | 2014-09-18 |
| KR20150132417A (en) | 2015-11-25 |
| TWI676207B (en) | 2019-11-01 |
| WO2014149394A1 (en) | 2014-09-25 |
| US10370762B2 (en) | 2019-08-06 |
| KR20180030256A (en) | 2018-03-21 |
| TWI595539B (en) | 2017-08-11 |
| SG10201710653TA (en) | 2018-02-27 |
| KR101840319B1 (en) | 2018-03-20 |
| US20180274099A1 (en) | 2018-09-27 |
| CN107574420A (en) | 2018-01-12 |
| TW201442073A (en) | 2014-11-01 |
| TW201737320A (en) | 2017-10-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB201302787D0 (en) | Method and apparatus | |
| GB201311264D0 (en) | Apparatus and method | |
| GB201418204D0 (en) | Apparatus and method | |
| GB201306083D0 (en) | Method and apparatus | |
| SG11201506362UA (en) | Apparatus and methods for photo-excitation processes | |
| GB201319319D0 (en) | Apparatus and method | |
| GB201306495D0 (en) | Apparatus and method | |
| GB201309915D0 (en) | Stall-start method and apparatus | |
| GB201311150D0 (en) | Apparatus and method | |
| GB201309689D0 (en) | Method and apparatus | |
| GB201413597D0 (en) | Apparatus and method | |
| GB201320657D0 (en) | Apparatus and method | |
| GB201416607D0 (en) | Method and apparatus | |
| GB201321397D0 (en) | Method and apparatus | |
| GB201315763D0 (en) | Method and apparatus | |
| GB201305942D0 (en) | Apparatus and method | |
| GB201315003D0 (en) | Apparatus and method | |
| GB201404090D0 (en) | Apparatus and method | |
| GB201319453D0 (en) | Apparatus and method | |
| GB201317037D0 (en) | Apparatus and method | |
| GB201316037D0 (en) | Apparatus and method | |
| GB201509878D0 (en) | Method and apparatus | |
| GB201314077D0 (en) | Method and apparatus | |
| GB201308460D0 (en) | Apparatus and method | |
| GB201304829D0 (en) | Method and apparatus |