SG11201404531UA - Polishing liquid for metal and polishing method - Google Patents
Polishing liquid for metal and polishing methodInfo
- Publication number
- SG11201404531UA SG11201404531UA SG11201404531UA SG11201404531UA SG11201404531UA SG 11201404531U A SG11201404531U A SG 11201404531UA SG 11201404531U A SG11201404531U A SG 11201404531UA SG 11201404531U A SG11201404531U A SG 11201404531UA SG 11201404531U A SG11201404531U A SG 11201404531UA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- metal
- liquid
- polishing liquid
- polishing method
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 2
- 239000007788 liquid Substances 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1472—Non-aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012019571 | 2012-02-01 | ||
PCT/JP2013/051877 WO2013115172A1 (en) | 2012-02-01 | 2013-01-29 | Polishing fluid for metal and polishing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201404531UA true SG11201404531UA (en) | 2014-09-26 |
Family
ID=48905207
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201604674VA SG10201604674VA (en) | 2012-02-01 | 2013-01-29 | Polishing liquid for metal and polishing method |
SG11201404531UA SG11201404531UA (en) | 2012-02-01 | 2013-01-29 | Polishing liquid for metal and polishing method |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201604674VA SG10201604674VA (en) | 2012-02-01 | 2013-01-29 | Polishing liquid for metal and polishing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US10037894B2 (en) |
JP (2) | JP6334172B2 (en) |
KR (1) | KR102033495B1 (en) |
CN (1) | CN104093810B (en) |
SG (2) | SG10201604674VA (en) |
TW (1) | TWI617654B (en) |
WO (1) | WO2013115172A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6366308B2 (en) | 2014-03-12 | 2018-08-01 | 株式会社ディスコ | Processing method |
JP6274926B2 (en) * | 2014-03-17 | 2018-02-07 | 株式会社ディスコ | Cutting method |
JP2018092960A (en) * | 2015-04-03 | 2018-06-14 | Jsr株式会社 | Cleaning composition and cleaning method |
WO2017130749A1 (en) * | 2016-01-28 | 2017-08-03 | 株式会社フジミインコーポレーテッド | Polishing composition |
CN108300331A (en) * | 2018-02-10 | 2018-07-20 | 雷春生 | A kind of metal-polishing liquid |
WO2020159771A1 (en) * | 2019-01-31 | 2020-08-06 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
CN114990685B (en) * | 2022-06-07 | 2024-06-28 | 上海应用技术大学 | Copper electrolytic polishing solution and electrolytic polishing method |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1204602C (en) | 1998-08-31 | 2005-06-01 | 日立化成工业株式会社 | Abrasive liquid for metal and method for polishing |
US20020062600A1 (en) * | 2000-08-11 | 2002-05-30 | Mandigo Glenn C. | Polishing composition |
JP2004153086A (en) | 2002-10-31 | 2004-05-27 | Showa Denko Kk | Metal abrasive compound, metal film grinding method and substrate manufacturing method |
WO2004039905A1 (en) * | 2002-10-31 | 2004-05-13 | Showa Denko K.K. | Composition for polishing metal, polishing method for metal layer, and production method for wafer |
JP5110244B2 (en) * | 2005-03-09 | 2012-12-26 | Jsr株式会社 | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
CN100595892C (en) * | 2005-04-14 | 2010-03-24 | 昭和电工株式会社 | Polishing composition |
JP2007073548A (en) * | 2005-09-02 | 2007-03-22 | Fujimi Inc | Polishing method |
JP5135755B2 (en) | 2005-10-21 | 2013-02-06 | 日立化成工業株式会社 | Polishing agent for copper and copper alloy and polishing method using the same |
US7265055B2 (en) | 2005-10-26 | 2007-09-04 | Cabot Microelectronics Corporation | CMP of copper/ruthenium substrates |
JP2007150264A (en) * | 2005-10-27 | 2007-06-14 | Hitachi Chem Co Ltd | Organic insulating material, polishing material for copper film compound material, and polishing method |
JP5412706B2 (en) | 2005-11-01 | 2014-02-12 | 日立化成株式会社 | Polishing material and polishing method for copper film and insulating material film |
KR20090122182A (en) | 2007-03-08 | 2009-11-26 | 히다치 가세고교 가부시끼가이샤 | Polishing liquid for metal and method of polishing film to be polished |
US20090056231A1 (en) | 2007-08-28 | 2009-03-05 | Daniela White | Copper CMP composition containing ionic polyelectrolyte and method |
JP2009088243A (en) | 2007-09-28 | 2009-04-23 | Fujifilm Corp | Polishing solution |
JP5447789B2 (en) | 2009-04-15 | 2014-03-19 | Jsr株式会社 | Chemical mechanical polishing aqueous dispersion, method for preparing the dispersion, and chemical mechanical polishing method |
JP5743397B2 (en) | 2009-12-02 | 2015-07-01 | 日立化成株式会社 | Abrasive for copper and chemical mechanical polishing method |
-
2013
- 2013-01-29 US US14/376,382 patent/US10037894B2/en active Active
- 2013-01-29 JP JP2013556408A patent/JP6334172B2/en active Active
- 2013-01-29 CN CN201380007749.2A patent/CN104093810B/en active Active
- 2013-01-29 SG SG10201604674VA patent/SG10201604674VA/en unknown
- 2013-01-29 SG SG11201404531UA patent/SG11201404531UA/en unknown
- 2013-01-29 WO PCT/JP2013/051877 patent/WO2013115172A1/en active Application Filing
- 2013-01-29 KR KR1020147021865A patent/KR102033495B1/en active IP Right Grant
- 2013-01-30 TW TW102103542A patent/TWI617654B/en active
-
2016
- 2016-12-06 JP JP2016236606A patent/JP6327326B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI617654B (en) | 2018-03-11 |
JP2017085124A (en) | 2017-05-18 |
KR20140119096A (en) | 2014-10-08 |
TW201335349A (en) | 2013-09-01 |
SG10201604674VA (en) | 2016-07-28 |
US10037894B2 (en) | 2018-07-31 |
WO2013115172A1 (en) | 2013-08-08 |
JP6327326B2 (en) | 2018-05-23 |
CN104093810A (en) | 2014-10-08 |
JPWO2013115172A1 (en) | 2015-05-11 |
JP6334172B2 (en) | 2018-05-30 |
KR102033495B1 (en) | 2019-10-17 |
US20140370707A1 (en) | 2014-12-18 |
CN104093810B (en) | 2016-01-20 |
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