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SG11201404531UA - Polishing liquid for metal and polishing method - Google Patents

Polishing liquid for metal and polishing method

Info

Publication number
SG11201404531UA
SG11201404531UA SG11201404531UA SG11201404531UA SG11201404531UA SG 11201404531U A SG11201404531U A SG 11201404531UA SG 11201404531U A SG11201404531U A SG 11201404531UA SG 11201404531U A SG11201404531U A SG 11201404531UA SG 11201404531U A SG11201404531U A SG 11201404531UA
Authority
SG
Singapore
Prior art keywords
polishing
metal
liquid
polishing liquid
polishing method
Prior art date
Application number
SG11201404531UA
Inventor
Yasuhiro Ichige
Kouji Haga
Seiichi Kondo
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11201404531UA publication Critical patent/SG11201404531UA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472Non-aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201404531UA 2012-02-01 2013-01-29 Polishing liquid for metal and polishing method SG11201404531UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012019571 2012-02-01
PCT/JP2013/051877 WO2013115172A1 (en) 2012-02-01 2013-01-29 Polishing fluid for metal and polishing method

Publications (1)

Publication Number Publication Date
SG11201404531UA true SG11201404531UA (en) 2014-09-26

Family

ID=48905207

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201604674VA SG10201604674VA (en) 2012-02-01 2013-01-29 Polishing liquid for metal and polishing method
SG11201404531UA SG11201404531UA (en) 2012-02-01 2013-01-29 Polishing liquid for metal and polishing method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201604674VA SG10201604674VA (en) 2012-02-01 2013-01-29 Polishing liquid for metal and polishing method

Country Status (7)

Country Link
US (1) US10037894B2 (en)
JP (2) JP6334172B2 (en)
KR (1) KR102033495B1 (en)
CN (1) CN104093810B (en)
SG (2) SG10201604674VA (en)
TW (1) TWI617654B (en)
WO (1) WO2013115172A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6366308B2 (en) 2014-03-12 2018-08-01 株式会社ディスコ Processing method
JP6274926B2 (en) * 2014-03-17 2018-02-07 株式会社ディスコ Cutting method
JP2018092960A (en) * 2015-04-03 2018-06-14 Jsr株式会社 Cleaning composition and cleaning method
WO2017130749A1 (en) * 2016-01-28 2017-08-03 株式会社フジミインコーポレーテッド Polishing composition
CN108300331A (en) * 2018-02-10 2018-07-20 雷春生 A kind of metal-polishing liquid
WO2020159771A1 (en) * 2019-01-31 2020-08-06 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
CN114990685B (en) * 2022-06-07 2024-06-28 上海应用技术大学 Copper electrolytic polishing solution and electrolytic polishing method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1204602C (en) 1998-08-31 2005-06-01 日立化成工业株式会社 Abrasive liquid for metal and method for polishing
US20020062600A1 (en) * 2000-08-11 2002-05-30 Mandigo Glenn C. Polishing composition
JP2004153086A (en) 2002-10-31 2004-05-27 Showa Denko Kk Metal abrasive compound, metal film grinding method and substrate manufacturing method
WO2004039905A1 (en) * 2002-10-31 2004-05-13 Showa Denko K.K. Composition for polishing metal, polishing method for metal layer, and production method for wafer
JP5110244B2 (en) * 2005-03-09 2012-12-26 Jsr株式会社 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
CN100595892C (en) * 2005-04-14 2010-03-24 昭和电工株式会社 Polishing composition
JP2007073548A (en) * 2005-09-02 2007-03-22 Fujimi Inc Polishing method
JP5135755B2 (en) 2005-10-21 2013-02-06 日立化成工業株式会社 Polishing agent for copper and copper alloy and polishing method using the same
US7265055B2 (en) 2005-10-26 2007-09-04 Cabot Microelectronics Corporation CMP of copper/ruthenium substrates
JP2007150264A (en) * 2005-10-27 2007-06-14 Hitachi Chem Co Ltd Organic insulating material, polishing material for copper film compound material, and polishing method
JP5412706B2 (en) 2005-11-01 2014-02-12 日立化成株式会社 Polishing material and polishing method for copper film and insulating material film
KR20090122182A (en) 2007-03-08 2009-11-26 히다치 가세고교 가부시끼가이샤 Polishing liquid for metal and method of polishing film to be polished
US20090056231A1 (en) 2007-08-28 2009-03-05 Daniela White Copper CMP composition containing ionic polyelectrolyte and method
JP2009088243A (en) 2007-09-28 2009-04-23 Fujifilm Corp Polishing solution
JP5447789B2 (en) 2009-04-15 2014-03-19 Jsr株式会社 Chemical mechanical polishing aqueous dispersion, method for preparing the dispersion, and chemical mechanical polishing method
JP5743397B2 (en) 2009-12-02 2015-07-01 日立化成株式会社 Abrasive for copper and chemical mechanical polishing method

Also Published As

Publication number Publication date
TWI617654B (en) 2018-03-11
JP2017085124A (en) 2017-05-18
KR20140119096A (en) 2014-10-08
TW201335349A (en) 2013-09-01
SG10201604674VA (en) 2016-07-28
US10037894B2 (en) 2018-07-31
WO2013115172A1 (en) 2013-08-08
JP6327326B2 (en) 2018-05-23
CN104093810A (en) 2014-10-08
JPWO2013115172A1 (en) 2015-05-11
JP6334172B2 (en) 2018-05-30
KR102033495B1 (en) 2019-10-17
US20140370707A1 (en) 2014-12-18
CN104093810B (en) 2016-01-20

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