[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

SG10201900327YA - A method of cvd plasma processing with a toroidal plasma processing apparatus - Google Patents

A method of cvd plasma processing with a toroidal plasma processing apparatus

Info

Publication number
SG10201900327YA
SG10201900327YA SG10201900327YA SG10201900327YA SG10201900327YA SG 10201900327Y A SG10201900327Y A SG 10201900327YA SG 10201900327Y A SG10201900327Y A SG 10201900327YA SG 10201900327Y A SG10201900327Y A SG 10201900327YA SG 10201900327Y A SG10201900327Y A SG 10201900327YA
Authority
SG
Singapore
Prior art keywords
plasma processing
toroidal plasma
toroidal
conduit
cvd
Prior art date
Application number
SG10201900327YA
Inventor
William Holber
Robert J Basnett
Original Assignee
Plasmability Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plasmability Llc filed Critical Plasmability Llc
Publication of SG10201900327YA publication Critical patent/SG10201900327YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A Method of CVD Plasma Processing with a Toroidal Plasma Processing Apparatus A method of CVD plasma processing for depositing at least one of diamond, diamond-like-carbon, or graphene comprising includes forming a vacuum chamber comprising a first toroidal plasma source comprising a conduit and a magnetic core, a second toroidal plasma source comprising a conduit and a magnetic core, and a process chamber that is common to both the first and second toroidal plasma source. Gas is introduced into the vacuum chamber. A first RF electromagnetic field is applied to the magnetic core surrounding the conduit of the first toroidal plasma source to form a first toroidal plasma loop discharge in the vacuum chamber. A second RF electromagnetic field is applied to the magnetic core surrounding the conduit of the second toroidal plasma source to form a second toroidal plasma loop discharge in the vacuum chamber. A workpiece is positioned in the process chamber for plasma processing at a distance from a hot plasma core to a surface of the workpiece that is in a range from .1 cm to 5 cm. A gas comprising hydrogen is introduced to the workpiece so that at least one of the first and second toroidal plasma loop discharges generates atomic hydrogen. (Fig. 2)
SG10201900327YA 2013-03-15 2014-03-14 A method of cvd plasma processing with a toroidal plasma processing apparatus SG10201900327YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361791274P 2013-03-15 2013-03-15
US201361910387P 2013-12-01 2013-12-01

Publications (1)

Publication Number Publication Date
SG10201900327YA true SG10201900327YA (en) 2019-02-27

Family

ID=51528210

Family Applications (3)

Application Number Title Priority Date Filing Date
SG10201708625XA SG10201708625XA (en) 2013-03-15 2014-03-14 Toroidal plasma processing apparatus
SG11201506564RA SG11201506564RA (en) 2013-03-15 2014-03-14 Toroidal plasma processing apparatus
SG10201900327YA SG10201900327YA (en) 2013-03-15 2014-03-14 A method of cvd plasma processing with a toroidal plasma processing apparatus

Family Applications Before (2)

Application Number Title Priority Date Filing Date
SG10201708625XA SG10201708625XA (en) 2013-03-15 2014-03-14 Toroidal plasma processing apparatus
SG11201506564RA SG11201506564RA (en) 2013-03-15 2014-03-14 Toroidal plasma processing apparatus

Country Status (8)

Country Link
US (3) US20140272108A1 (en)
EP (1) EP2974558A4 (en)
JP (2) JP6417390B2 (en)
KR (1) KR102003106B1 (en)
CN (1) CN105144849B (en)
MY (1) MY187052A (en)
SG (3) SG10201708625XA (en)
WO (1) WO2014143775A1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107419236B (en) * 2013-01-14 2019-07-12 加州理工学院 The method and system formed for graphene
SG10201708625XA (en) * 2013-03-15 2017-11-29 Plasmability Llc Toroidal plasma processing apparatus
US10486232B2 (en) 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
WO2016179032A1 (en) * 2015-05-04 2016-11-10 Vranich Michael N External plasma system
CN107810542A (en) * 2015-05-21 2018-03-16 普拉斯玛比利提有限责任公司 Peripheral plasma processing unit with Forming Workpiece fixture
US10249495B2 (en) * 2016-06-28 2019-04-02 Applied Materials, Inc. Diamond like carbon layer formed by an electron beam plasma process
JP6821472B2 (en) * 2016-09-30 2021-01-27 株式会社ダイヘン Plasma generator
DE102018204585A1 (en) * 2017-03-31 2018-10-04 centrotherm international AG Plasma generator, plasma treatment apparatus and method for pulsed supply of electrical power
US20190006154A1 (en) * 2017-06-28 2019-01-03 Chaolin Hu Toroidal Plasma Chamber
CN108303216B (en) * 2018-01-02 2020-03-06 京东方科技集团股份有限公司 Gas detection device
US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
US11019715B2 (en) 2018-07-13 2021-05-25 Mks Instruments, Inc. Plasma source having a dielectric plasma chamber with improved plasma resistance
US11633710B2 (en) 2018-08-23 2023-04-25 Transform Materials Llc Systems and methods for processing gases
AU2019325589B2 (en) 2018-08-23 2023-08-31 Transform Materials Llc Systems and methods for processing gases
CN110872116A (en) * 2018-09-04 2020-03-10 新奥科技发展有限公司 Preparation device and preparation method of graphene
US10553403B1 (en) * 2019-05-08 2020-02-04 Mks Instruments, Inc. Polygonal toroidal plasma source
CN110357085B (en) * 2019-08-15 2020-04-24 常州机电职业技术学院 Graphene surface plasma modification treatment device and treatment method
WO2021026888A1 (en) * 2019-08-15 2021-02-18 常州机电职业技术学院 Graphene surface plasma modification treatment device and treatment method
WO2021115596A1 (en) 2019-12-11 2021-06-17 Jozef Stefan Institute Method and apparatus for deposition of carbon nanostructures
KR20220107521A (en) * 2021-01-25 2022-08-02 (주) 엔피홀딩스 Reactor, process processing apparatus including the same and method for manufacturing reactor
US20240079209A1 (en) * 2022-09-02 2024-03-07 Mks Instruments, Inc. Method and apparatus for plasma generation
CN115274395B (en) * 2022-09-27 2022-12-09 北京芯美达科技有限公司 Method for enlarging effective reaction area of plasma

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4431898A (en) * 1981-09-01 1984-02-14 The Perkin-Elmer Corporation Inductively coupled discharge for plasma etching and resist stripping
JPH04238897A (en) * 1991-01-07 1992-08-26 Toyota Motor Corp Method for forming diamond film
US6238588B1 (en) * 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US5349154A (en) * 1991-10-16 1994-09-20 Rockwell International Corporation Diamond growth by microwave generated plasma flame
US5397428A (en) * 1991-12-20 1995-03-14 The University Of North Carolina At Chapel Hill Nucleation enhancement for chemical vapor deposition of diamond
JPH0945497A (en) * 1995-08-02 1997-02-14 Toshiba Mach Co Ltd Dielectric coupling plasma cvd method and its device
JP3519046B2 (en) * 1996-09-10 2004-04-12 日立マクセル株式会社 Plasma CVD equipment
US7569790B2 (en) 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6924455B1 (en) 1997-06-26 2005-08-02 Applied Science & Technology, Inc. Integrated plasma chamber and inductively-coupled toroidal plasma source
US7166816B1 (en) 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US6112696A (en) * 1998-02-17 2000-09-05 Dry Plasma Systems, Inc. Downstream plasma using oxygen gas mixture
WO2000017906A2 (en) * 1998-09-22 2000-03-30 Applied Materials, Inc. Rf plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls
US6392351B1 (en) * 1999-05-03 2002-05-21 Evgeny V. Shun'ko Inductive RF plasma source with external discharge bridge
JP2003506888A (en) * 1999-08-06 2003-02-18 アドバンスト・エナジー・インダストリーズ・インコーポレイテッド Inductively coupled annular plasma source apparatus and method for processing gases and materials
US6418874B1 (en) * 2000-05-25 2002-07-16 Applied Materials, Inc. Toroidal plasma source for plasma processing
US7520877B2 (en) * 2000-06-07 2009-04-21 Wisconsin Alumni Research Foundation Radiofrequency ablation system using multiple prong probes
US7294563B2 (en) * 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US7223676B2 (en) * 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US6453842B1 (en) * 2000-08-11 2002-09-24 Applied Materials Inc. Externally excited torroidal plasma source using a gas distribution plate
EP1307896A2 (en) * 2000-08-11 2003-05-07 Applied Materials, Inc. Externally excited torroidal plasma source
US7430984B2 (en) * 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7320734B2 (en) * 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US6348126B1 (en) * 2000-08-11 2002-02-19 Applied Materials, Inc. Externally excited torroidal plasma source
US6551446B1 (en) * 2000-08-11 2003-04-22 Applied Materials Inc. Externally excited torroidal plasma source with a gas distribution plate
US6930025B2 (en) 2001-02-01 2005-08-16 Canon Kabushiki Kaisha Transparent conductive film formation process, photovoltaic device production process, transparent conductive film, and photovoltaic device
US6634313B2 (en) * 2001-02-13 2003-10-21 Applied Materials, Inc. High-frequency electrostatically shielded toroidal plasma and radical source
US6583572B2 (en) 2001-03-30 2003-06-24 Lam Research Corporation Inductive plasma processor including current sensor for plasma excitation coil
JP3662211B2 (en) * 2001-09-25 2005-06-22 東京エレクトロン株式会社 Plasma processing equipment
WO2003093173A2 (en) * 2002-05-01 2003-11-13 Blacklight Power, Inc. Diamond synthesis
US20060162656A1 (en) * 2002-07-31 2006-07-27 Tokyo Electron Limited Reduced volume, high conductance process chamber
KR101052395B1 (en) 2002-09-06 2011-07-28 엘리멘트 식스 리미티드 Colored diamonds
KR100488348B1 (en) * 2002-11-14 2005-05-10 최대규 Plasma process chamber and system
GB0227261D0 (en) 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
US6927358B2 (en) 2003-01-31 2005-08-09 Advanced Energy Industries, Inc. Vacuum seal protection in a dielectric break
CN1798697A (en) * 2003-04-15 2006-07-05 布莱克光电有限公司 Plasma reactor and process for producing lower-energy hydrogen species.
US6872909B2 (en) * 2003-04-16 2005-03-29 Applied Science And Technology, Inc. Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel
JP4460940B2 (en) * 2003-05-07 2010-05-12 株式会社ニューパワープラズマ Induction plasma chamber with multiple discharge tube bridges
US20040237897A1 (en) * 2003-05-27 2004-12-02 Hiroji Hanawa High-Frequency electrostatically shielded toroidal plasma and radical source
JP4052476B2 (en) * 2004-02-20 2008-02-27 三菱重工業株式会社 Manufacturing method of SiN thin film
JP2006024442A (en) * 2004-07-08 2006-01-26 Sharp Corp Apparatus and method for atmospheric-pressure plasma treatment
US7666464B2 (en) * 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
EP1831425B1 (en) * 2004-11-08 2011-07-13 MKS Instruments, Inc. Method of disposing metal bearing gases
KR101121418B1 (en) * 2005-02-17 2012-03-16 주성엔지니어링(주) Plasma generation apparatus comprising toroidal core
US7312162B2 (en) * 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
KR100720989B1 (en) * 2005-07-15 2007-05-28 주식회사 뉴파워 프라즈마 Multi chamber plasma process system
US7569791B2 (en) * 2005-09-30 2009-08-04 Energetiq Technology, Inc. Inductively-driven plasma light source
US20100209311A1 (en) * 2005-10-12 2010-08-19 Blacklight Power, Inc. Plasma reactor and process for producing lower-energy hydrogen species
US20080083701A1 (en) * 2006-10-04 2008-04-10 Mks Instruments, Inc. Oxygen conditioning of plasma vessels
US7691755B2 (en) * 2007-05-15 2010-04-06 Applied Materials, Inc. Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor
US20090017258A1 (en) * 2007-07-10 2009-01-15 Carlisle John A Diamond film deposition
DE212007000107U1 (en) * 2007-10-19 2010-09-02 MKS Instruments, Inc., Wilmington Annular plasma chamber for processes with high gas flow rates
US8900405B2 (en) * 2007-11-14 2014-12-02 Applied Materials, Inc. Plasma immersion ion implantation reactor with extended cathode process ring
KR20100106608A (en) * 2008-01-31 2010-10-01 어플라이드 머티어리얼스, 인코포레이티드 Closed loop mocvd deposition control
DE102008031092A1 (en) * 2008-07-01 2010-01-07 Linde Aktiengesellschaft Method and device for generating hydrogen
US8460464B2 (en) * 2009-03-31 2013-06-11 Rajneesh Bhandari Method for producing single crystalline diamonds
US20100310766A1 (en) 2009-06-07 2010-12-09 Veeco Compound Semiconductor, Inc. Roll-to-Roll Chemical Vapor Deposition System
CN102598201A (en) * 2009-08-27 2012-07-18 摩赛科结晶公司 Penetrating plasma generating apparatus for high vacuum chambers
KR101170926B1 (en) * 2010-09-01 2012-08-03 (주) 엔피홀딩스 Plasma reactor having ignition device for plasma discharge
KR20120064867A (en) * 2010-12-10 2012-06-20 주식회사 플라즈마트 Plasma generation apparatus
GB201021865D0 (en) * 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
US20140062285A1 (en) * 2012-08-29 2014-03-06 Mks Instruments, Inc. Method and Apparatus for a Large Area Inductive Plasma Source
SG10201708625XA (en) * 2013-03-15 2017-11-29 Plasmability Llc Toroidal plasma processing apparatus
US20190006154A1 (en) * 2017-06-28 2019-01-03 Chaolin Hu Toroidal Plasma Chamber
US10505348B2 (en) * 2017-09-15 2019-12-10 Mks Instruments, Inc. Apparatus and method for ignition of a plasma system and for monitoring health of the plasma system

Also Published As

Publication number Publication date
JP6417390B2 (en) 2018-11-07
EP2974558A4 (en) 2016-08-10
CN105144849B (en) 2019-06-18
SG10201708625XA (en) 2017-11-29
MY187052A (en) 2021-08-27
SG11201506564RA (en) 2015-09-29
US9909215B2 (en) 2018-03-06
KR102003106B1 (en) 2019-07-23
EP2974558A1 (en) 2016-01-20
KR20150131051A (en) 2015-11-24
US20140272108A1 (en) 2014-09-18
JP2019046805A (en) 2019-03-22
US20170298513A1 (en) 2017-10-19
CN105144849A (en) 2015-12-09
WO2014143775A1 (en) 2014-09-18
US20180155839A1 (en) 2018-06-07
JP2016520950A (en) 2016-07-14

Similar Documents

Publication Publication Date Title
SG10201900327YA (en) A method of cvd plasma processing with a toroidal plasma processing apparatus
WO2014110446A3 (en) Method and system for graphene formation
MX2019012614A (en) Reactive gas generation system and method of treatment using reactive gas.
WO2011063146A3 (en) Plasma source design
EA035316B9 (en) Method for treating a sapphire material by a single- and/or multi-charged gas ion beam for producing an anti-glare material
WO2013098702A3 (en) Mixed mode pulsing etching in plasma processing systems
SG10201908213VA (en) Method and system for graphene formation
EP3492428A3 (en) Nanocrystalline graphene and method of forming nanocrystalline graphene
JP2015505421A5 (en)
WO2012087737A3 (en) Variable-density plasma processing of semiconductor substrates
IN2014DN07707A (en)
MX2019014731A (en) Systems and methods for reducing undesired eddy currents.
MX342253B (en) Device for generating plasma having a high range along an axis by electron cyclotron resonance (ecr) from a gaseous medium.
MX360902B (en) Method and device for generating a plasma excited by microwave energy in the electron cyclotron resonance (ecr) domain, in order to carry out a surface treatment or produce a coating around a filiform element.
MX2016001066A (en) Methods and systems for generating reactive fluoride species from a gaseous precursor in a subterranean formation for stimulation thereof.
WO2012087919A3 (en) Methods and apparatus for gas delivery into plasma processing chambers
SG11201901034XA (en) Substrate processing apparatus, metal member, and method of manufacturing semiconductor device
PH12015502279A1 (en) Plasma perforation
TW201612944A (en) Plasma processing apparatus
WO2014154424A3 (en) Method for a diamond vapor deposition
GB201303809D0 (en) Method and apparatus
Dong et al. Effect of plasma nonuniform on etching profile
Li et al. Simulation of Plasma Characteristics for Inductively Coupled Argon Plasma Using Dual-Frequency Antennas
UA79431U (en) Method for plasma etching in chlorocarbon plasma
Son et al. Properties of large area weakly magnetized inductively coupled plasma measured by cutoff probe and tuned single Langmuir probe