SG10201604044UA - Method of transferring thin films - Google Patents
Method of transferring thin filmsInfo
- Publication number
- SG10201604044UA SG10201604044UA SG10201604044UA SG10201604044UA SG10201604044UA SG 10201604044U A SG10201604044U A SG 10201604044UA SG 10201604044U A SG10201604044U A SG 10201604044UA SG 10201604044U A SG10201604044U A SG 10201604044UA SG 10201604044U A SG10201604044U A SG 10201604044UA
- Authority
- SG
- Singapore
- Prior art keywords
- thin films
- transferring thin
- transferring
- films
- thin
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
- B32B37/025—Transfer laminating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Micromachines (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Carbon And Carbon Compounds (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Decoration By Transfer Pictures (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161489021P | 2011-05-23 | 2011-05-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201604044UA true SG10201604044UA (en) | 2016-07-28 |
Family
ID=47217517
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201604044UA SG10201604044UA (en) | 2011-05-23 | 2012-05-23 | Method of transferring thin films |
| SG2013086699A SG195119A1 (en) | 2011-05-23 | 2012-05-23 | Method of transferring thin films |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013086699A SG195119A1 (en) | 2011-05-23 | 2012-05-23 | Method of transferring thin films |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10723112B2 (en) |
| EP (1) | EP2715778B1 (en) |
| JP (1) | JP6206729B2 (en) |
| CN (1) | CN103620733B (en) |
| SG (2) | SG10201604044UA (en) |
| WO (1) | WO2012161660A1 (en) |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012161660A1 (en) | 2011-05-23 | 2012-11-29 | National University Of Singapore | Method of transferring thin films |
| US8969154B2 (en) * | 2011-08-23 | 2015-03-03 | Micron Technology, Inc. | Methods for fabricating semiconductor device structures and arrays of vertical transistor devices |
| US20140065359A1 (en) * | 2012-08-30 | 2014-03-06 | Jawaharial Nehru Centre for Advanced Scientific Researc | Graphene ribbons and methods for their preparation and use |
| WO2014097015A1 (en) * | 2012-12-19 | 2014-06-26 | Basf Se | Graphene-based in-plane supercapacitors |
| CN103111122B (en) * | 2013-01-21 | 2014-10-08 | 苏州经贸职业技术学院 | Porous adsorption film and preparation method thereof |
| KR102036110B1 (en) * | 2013-02-22 | 2019-10-24 | 엘지전자 주식회사 | Growing substrate having heterostructure, nitride semiconductor device and method for manufacturing the same |
| WO2014134524A1 (en) * | 2013-03-01 | 2014-09-04 | Massachusetts Institute Of Technology | Synthesis of transition metal disulfide layers |
| US20150060768A1 (en) * | 2013-08-13 | 2015-03-05 | The Board Of Regents Of The University Of Texas System | Method to improve performance characteristics of transistors comprising graphene and other two-dimensional materials |
| CN112599592A (en) * | 2014-04-23 | 2021-04-02 | 宾夕法尼亚大学理事会 | Scalable, printable, patterned sheet of high mobility graphene on flexible substrates |
| CN103964422A (en) * | 2014-04-25 | 2014-08-06 | 无锡格菲电子薄膜科技有限公司 | Graphene transferring method |
| EP2985645B1 (en) * | 2014-08-13 | 2019-10-16 | Caliopa NV | Method for producing an integrated optical circuit |
| US9431565B2 (en) * | 2014-10-23 | 2016-08-30 | William Marsh Rice University | Charge coupled device based on atomically layered van der waals solid state film for opto-electronic memory and image capture |
| KR102412965B1 (en) * | 2014-12-30 | 2022-06-24 | 삼성전자주식회사 | Electronic device having two dimensional material layer and method of manufacturing the electronic device using inkjet printing |
| US9493025B2 (en) | 2015-01-19 | 2016-11-15 | International Business Machines Corporation | Graphene layers for identification of products |
| CN104532209B (en) * | 2015-01-27 | 2017-12-29 | 厦门大学 | A kind of method that wafer scale large scale hexagonal boron nitride is prepared in substrate |
| CN106190051A (en) * | 2015-05-05 | 2016-12-07 | 赖中平 | The Graphene stack membrane of tool thermal conductance |
| CN104947070B (en) * | 2015-06-01 | 2018-03-02 | 深圳大学 | The preparation method and molybdenum disulfide film of a kind of molybdenum disulfide film |
| KR101709704B1 (en) | 2015-07-01 | 2017-03-08 | 한국과학기술연구원 | Transfer method of materials by using petroleum jelly |
| MA42906A (en) * | 2015-07-10 | 2018-05-16 | De La Rue Int Ltd | METHOD OF MANUFACTURING A PATTERN IN OR ON A SUPPORT |
| KR101703653B1 (en) | 2015-07-27 | 2017-02-07 | 이형석 | Light diffusing sheet |
| CN105070347B (en) * | 2015-08-17 | 2017-07-11 | 中国科学院上海微系统与信息技术研究所 | It is a kind of that device architecture of contact electrode and preparation method thereof is used as using graphene |
| US20200223206A1 (en) * | 2015-09-11 | 2020-07-16 | Spectral Devices Inc. | Methods for production and transfer of patterned thin films at wafer-scale |
| WO2017053550A1 (en) * | 2015-09-22 | 2017-03-30 | The University Of Massachusetts | Method of transfer printing and articles manufactured therefrom |
| TWI672727B (en) * | 2015-09-25 | 2019-09-21 | 晶元光電股份有限公司 | A metal recycling equipment and a process for recycling metals on a wafer by using the same |
| CN105304832B (en) * | 2015-11-02 | 2017-07-25 | 深圳市华星光电技术有限公司 | The preparation method of electroluminescent device |
| WO2017085849A1 (en) * | 2015-11-19 | 2017-05-26 | 三井金属鉱業株式会社 | Production method for printed wiring board having dielectric layer |
| CN106904605B (en) * | 2015-12-21 | 2018-10-19 | 北京大学 | A method of the transfer graphene based on sublimed method |
| KR101870643B1 (en) * | 2016-01-28 | 2018-06-25 | 주식회사 참트론 | Graphene transfer method |
| US20170217777A1 (en) * | 2016-01-30 | 2017-08-03 | Massachusetts Institute Of Technology | Transfer Method for Two-Dimensional Film |
| CN105679678A (en) * | 2016-03-18 | 2016-06-15 | 武汉华星光电技术有限公司 | Preparation method for graphene thin film transistor |
| TWI610804B (en) * | 2016-05-23 | 2018-01-11 | 國立成功大學 | Energy-saving Glass and Method of Manufacturing the Same |
| WO2018009931A1 (en) | 2016-07-08 | 2018-01-11 | Cornell University | Transition metal chalcogenide van der waals films, methods of making same, and apparatuses and devices comprising same |
| CN106206254A (en) * | 2016-07-13 | 2016-12-07 | 合肥工业大学 | There is the preparation method of the large-area two-dimensional stratified material of excellent photoluminescence property |
| KR101897902B1 (en) * | 2017-02-27 | 2018-09-14 | 한국과학기술원 | Method for fabricating discrete nanostructures |
| CN107887319A (en) * | 2017-11-16 | 2018-04-06 | 中国科学院上海微系统与信息技术研究所 | The preparation method of graphene on a kind of insulator |
| US10593798B2 (en) * | 2018-08-05 | 2020-03-17 | International Business Machines Corporation | Vertical transistor with one atomic layer gate length |
| US10586864B2 (en) | 2018-08-05 | 2020-03-10 | International Business Machines Corporation | Vertical transistor with one-dimensional edge contacts |
| CN109103072B (en) * | 2018-08-28 | 2021-03-02 | 湘潭大学 | Transfer method of large-area single-layer and few-layer molybdenum disulfide film |
| CN109850882B (en) * | 2018-08-30 | 2020-10-16 | 中国科学院微电子研究所 | Multi-support-film-assisted graphene electrochemical transfer method |
| KR102253452B1 (en) * | 2018-10-11 | 2021-05-18 | 성균관대학교산학협력단 | Transfer method of thin films using van der waals force |
| CN111217359B (en) * | 2018-11-23 | 2023-11-07 | 中国科学院上海微系统与信息技术研究所 | Preparation method of Si-based substrate heterogeneous integrated graphene |
| US10926521B2 (en) * | 2018-12-28 | 2021-02-23 | Palo Alto Research Center Incorporated | Method and system for mass assembly of thin film materials |
| TWI703243B (en) * | 2019-01-23 | 2020-09-01 | 中原大學 | Method of forming single-crystal group-iii nitride |
| WO2020152358A1 (en) * | 2019-01-25 | 2020-07-30 | Quellmalz Arne | Method of material transfer |
| US20220214611A1 (en) * | 2019-04-16 | 2022-07-07 | Shin-Etsu Chemical Co., Ltd. | Pellicle, Exposure Original Plate with Pellicle, Method for Producing Semiconductor Device, Method for Producing Liquid Crystal Display Board, Method for Regenerating Exposure Original Plate, and Peeling Residue Reduction Method |
| JP2023502065A (en) * | 2019-11-15 | 2023-01-20 | リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミネソタ | Transfer material layer for graphene manufacturing process |
| CN111086971B (en) * | 2019-12-25 | 2022-06-21 | 大连理工大学 | Transfer printing process method for flexible MEMS device |
| CN111362258A (en) * | 2020-02-12 | 2020-07-03 | 浙江大学 | Graphene film transfer method using beeswax as supporting layer |
| CN111254491B (en) * | 2020-03-19 | 2021-08-10 | 四川大学 | Preparation method of high-quality two-dimensional atomic layer film |
| CN115004343A (en) * | 2020-06-28 | 2022-09-02 | 深圳清华大学研究院 | Atomic-level flattening device with microstructure and preparation method thereof |
| CN111933650B (en) * | 2020-07-22 | 2022-10-14 | 华中科技大学 | Molybdenum sulfide thin film imaging array device and preparation method thereof |
| US11942352B2 (en) * | 2020-08-31 | 2024-03-26 | Industry-Academic Cooperation Foundation, Yonsei University | Manufacturing method of LED display |
| CN112850658A (en) * | 2021-01-15 | 2021-05-28 | 武汉理工大学 | Method for preparing copper indium gallium selenide micro-condensation solar cell absorption layer |
| GB2603905B (en) * | 2021-02-17 | 2023-12-13 | Paragraf Ltd | A method for the manufacture of an improved graphene substrate and applications therefor |
| CN113078053B (en) * | 2021-03-25 | 2024-02-27 | 中国科学院上海微系统与信息技术研究所 | Preparation method of top gate structure and semiconductor structure |
| WO2022243895A1 (en) * | 2021-05-18 | 2022-11-24 | Mellanox Technologies, Ltd. | Process for applying a two-dimensional material to a target substrate post-lamination |
| CN114214101B (en) * | 2021-12-28 | 2022-08-12 | 山东大学 | Method for regulating friction force of molybdenum disulfide by constructing interface liquid drops |
| CN114715842B (en) * | 2022-04-07 | 2023-05-16 | 西安交通大学 | Low-dimensional material transfer medium, preparation method and transfer method |
| CN115595551A (en) * | 2022-09-20 | 2023-01-13 | 西北工业大学（Cn） | High-fidelity 2D TMDs transfer method |
| KR20240139185A (en) * | 2023-03-13 | 2024-09-23 | 한국기계연구원 | Transfer film for high-speed transfer and transfer method using the transfer film |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8222072B2 (en) * | 2002-12-20 | 2012-07-17 | The Trustees Of Princeton University | Methods of fabricating devices by low pressure cold welding |
| JP2006049800A (en) | 2004-03-10 | 2006-02-16 | Seiko Epson Corp | Thin film device feeder, manufacturing method thereof, transfer method, manufacturing method of semiconductor device, and electronic machine |
| US7943491B2 (en) * | 2004-06-04 | 2011-05-17 | The Board Of Trustees Of The University Of Illinois | Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp |
| US20080083484A1 (en) * | 2006-09-28 | 2008-04-10 | Graciela Beatriz Blanchet | Method to form a pattern of functional material on a substrate |
| GB0701909D0 (en) * | 2007-01-31 | 2007-03-14 | Imp Innovations Ltd | Deposition Of Organic Layers |
| US8470701B2 (en) * | 2008-04-03 | 2013-06-25 | Advanced Diamond Technologies, Inc. | Printable, flexible and stretchable diamond for thermal management |
| WO2009129194A2 (en) * | 2008-04-14 | 2009-10-22 | Massachusetts Institute Of Technology | Large-area single- and few-layer graphene on arbitrary substrates |
| KR101004849B1 (en) * | 2008-09-02 | 2010-12-28 | 삼성전기주식회사 | Fabrication method of thin film device |
| KR20100027526A (en) * | 2008-09-02 | 2010-03-11 | 삼성전기주식회사 | Fabrication method of thin film device |
| JP2010143103A (en) * | 2008-12-19 | 2010-07-01 | Sony Corp | Transfer pattern forming blanket, transfer pattern forming method, and transfer apparatus |
| TWI573185B (en) * | 2009-05-12 | 2017-03-01 | 美國伊利諾大學理事會 | Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays |
| JP5097172B2 (en) * | 2009-06-23 | 2012-12-12 | 株式会社沖データ | Graphene layer peeling method, graphene wafer manufacturing method, and graphene element manufacturing method |
| US8753468B2 (en) | 2009-08-27 | 2014-06-17 | The United States Of America, As Represented By The Secretary Of The Navy | Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates |
| KR101652787B1 (en) * | 2009-11-12 | 2016-09-01 | 삼성전자주식회사 | Method of fabricating large-scale graphene and transfering large-scale graphene |
| WO2012161660A1 (en) | 2011-05-23 | 2012-11-29 | National University Of Singapore | Method of transferring thin films |
-
2012
- 2012-05-23 WO PCT/SG2012/000182 patent/WO2012161660A1/en active Application Filing
- 2012-05-23 SG SG10201604044UA patent/SG10201604044UA/en unknown
- 2012-05-23 SG SG2013086699A patent/SG195119A1/en unknown
- 2012-05-23 CN CN201280031744.9A patent/CN103620733B/en active Active
- 2012-05-23 US US14/119,830 patent/US10723112B2/en active Active
- 2012-05-23 JP JP2014512797A patent/JP6206729B2/en active Active
- 2012-05-23 EP EP12788925.1A patent/EP2715778B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2715778C0 (en) | 2023-06-07 |
| US20140087191A1 (en) | 2014-03-27 |
| CN103620733A (en) | 2014-03-05 |
| EP2715778B1 (en) | 2023-06-07 |
| CN103620733B (en) | 2018-04-24 |
| JP2014525134A (en) | 2014-09-25 |
| WO2012161660A1 (en) | 2012-11-29 |
| EP2715778A1 (en) | 2014-04-09 |
| US10723112B2 (en) | 2020-07-28 |
| JP6206729B2 (en) | 2017-10-04 |
| EP2715778A4 (en) | 2014-11-19 |
| SG195119A1 (en) | 2013-12-30 |
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