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SG10201501458TA - Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures - Google Patents

Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures

Info

Publication number
SG10201501458TA
SG10201501458TA SG10201501458TA SG10201501458TA SG10201501458TA SG 10201501458T A SG10201501458T A SG 10201501458TA SG 10201501458T A SG10201501458T A SG 10201501458TA SG 10201501458T A SG10201501458T A SG 10201501458TA SG 10201501458T A SG10201501458T A SG 10201501458TA
Authority
SG
Singapore
Prior art keywords
structures
semiconductor
methods
metal
forming
Prior art date
Application number
SG10201501458TA
Inventor
Sanh D Tang
Ming Zhang
Andrew M Bayless
John K Zahurak
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG10201501458TA publication Critical patent/SG10201501458TA/en

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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
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    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
SG10201501458TA 2010-03-02 2011-02-10 Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures SG10201501458TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/715,704 US9608119B2 (en) 2010-03-02 2010-03-02 Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures

Publications (1)

Publication Number Publication Date
SG10201501458TA true SG10201501458TA (en) 2015-04-29

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SG10201501458TA SG10201501458TA (en) 2010-03-02 2011-02-10 Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
SG2012062261A SG183452A1 (en) 2010-03-02 2011-02-10 Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures

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SG2012062261A SG183452A1 (en) 2010-03-02 2011-02-10 Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures

Country Status (8)

Country Link
US (2) US9608119B2 (en)
EP (1) EP2543069A4 (en)
JP (1) JP5671070B2 (en)
KR (1) KR101430855B1 (en)
CN (1) CN102782850B (en)
SG (2) SG10201501458TA (en)
TW (1) TWI466256B (en)
WO (1) WO2011109146A2 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8507966B2 (en) 2010-03-02 2013-08-13 Micron Technology, Inc. Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
US9608119B2 (en) 2010-03-02 2017-03-28 Micron Technology, Inc. Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
US8513722B2 (en) 2010-03-02 2013-08-20 Micron Technology, Inc. Floating body cell structures, devices including same, and methods for forming same
US8288795B2 (en) 2010-03-02 2012-10-16 Micron Technology, Inc. Thyristor based memory cells, devices and systems including the same and methods for forming the same
US9646869B2 (en) * 2010-03-02 2017-05-09 Micron Technology, Inc. Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
KR101670451B1 (en) * 2010-03-12 2016-10-31 삼성전자주식회사 Buried electric wiring line substrate, method of forming the same, semiconductor device and method of manufacturing the same
US8598621B2 (en) 2011-02-11 2013-12-03 Micron Technology, Inc. Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor
US8952418B2 (en) 2011-03-01 2015-02-10 Micron Technology, Inc. Gated bipolar junction transistors
US8519431B2 (en) 2011-03-08 2013-08-27 Micron Technology, Inc. Thyristors
US8772848B2 (en) 2011-07-26 2014-07-08 Micron Technology, Inc. Circuit structures, memory circuitry, and methods
KR20130113032A (en) * 2012-04-05 2013-10-15 에스케이하이닉스 주식회사 Semiconductor substrate, semiconductor chip having the same and stacked semiconductor package
US9709740B2 (en) 2012-06-04 2017-07-18 Micron Technology, Inc. Method and structure providing optical isolation of a waveguide on a silicon-on-insulator substrate
SG11201407282XA (en) * 2012-07-31 2015-01-29 Univ Nanyang Tech Semiconductor device and method for forming the same
TWI566328B (en) * 2013-07-29 2017-01-11 高效電源轉換公司 Gan transistors with polysilicon layers for creating additional components
US20150171321A1 (en) * 2013-12-13 2015-06-18 Micron Technology, Inc. Methods of forming metal on inhomogeneous surfaces and structures incorporating metal on inhomogeneous surfaces
WO2015191082A1 (en) * 2014-06-13 2015-12-17 Intel Corporation Surface encapsulation for wafer bonding
JP6165127B2 (en) * 2014-12-22 2017-07-19 三菱重工工作機械株式会社 Semiconductor device and manufacturing method of semiconductor device
US10566187B2 (en) * 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9704916B2 (en) * 2015-07-24 2017-07-11 Artilux Inc. Multi-wafer based light absorption apparatus and applications thereof
US10644187B2 (en) 2015-07-24 2020-05-05 Artilux, Inc. Multi-wafer based light absorption apparatus and applications thereof
US11271028B2 (en) * 2018-02-12 2022-03-08 Trieye Ltd. Germanium on insulator for CMOS imagers in the short wave infrared
US11658208B2 (en) * 2018-03-20 2023-05-23 Intel Corporation Thin film transistors for high voltage applications
FR3079346B1 (en) * 2018-03-26 2020-05-29 Soitec METHOD FOR MANUFACTURING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING SUCH A PIEZOELECTRIC LAYER
EP3900028A4 (en) 2020-01-07 2022-08-03 Yangtze Memory Technologies Co., Ltd. Metal-dielectric bonding method and structure

Family Cites Families (285)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3988771A (en) 1974-05-28 1976-10-26 General Electric Company Spatial control of lifetime in semiconductor device
US4487639A (en) 1980-09-26 1984-12-11 Texas Instruments Incorporated Localized epitaxy for VLSI devices
US5106776A (en) 1988-06-01 1992-04-21 Texas Instruments Incorporated Method of making high performance composed pillar dRAM cell
JPH0750772B2 (en) 1989-01-24 1995-05-31 富士通株式会社 Semiconductor device and manufacturing method thereof
US5102025A (en) * 1989-12-01 1992-04-07 Gary Weldele Computer tractor rail paper margin stripper
JPH0464249A (en) 1990-07-04 1992-02-28 Fujitsu Ltd Manufacture of soi substrate
DE69133311T2 (en) 1990-10-15 2004-06-24 Aptix Corp., San Jose Connection substrate with integrated circuit for programmable connection and sample analysis
JP3081967B2 (en) 1990-11-21 2000-08-28 富士通株式会社 Method for manufacturing silicon-on-insulator substrate
US5102821A (en) * 1990-12-20 1992-04-07 Texas Instruments Incorporated SOI/semiconductor heterostructure fabrication by wafer bonding of polysilicon to titanium
US5098861A (en) * 1991-01-08 1992-03-24 Unitrode Corporation Method of processing a semiconductor substrate including silicide bonding
JPH04283914A (en) 1991-03-12 1992-10-08 Fujitsu Ltd Cladded semiconductor substrate and production method thereof
EP0539559A1 (en) * 1991-04-03 1993-05-05 Eastman Kodak Company HIGH DURABILITY MASK FOR DRY ETCHING OF GaAs
FR2681472B1 (en) 1991-09-18 1993-10-29 Commissariat Energie Atomique PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL.
US5465249A (en) 1991-11-26 1995-11-07 Cree Research, Inc. Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate
US5412598A (en) 1992-04-27 1995-05-02 The University Of British Columbia Bistable four layer device, memory cell, and method for storing and retrieving binary information
JPH06104446A (en) 1992-09-22 1994-04-15 Toshiba Corp Semiconductor device
JPH0798460A (en) 1992-10-21 1995-04-11 Seiko Instr Inc Semiconductor device and light valve device
US5260233A (en) 1992-11-06 1993-11-09 International Business Machines Corporation Semiconductor device and wafer structure having a planar buried interconnect by wafer bonding
US5600160A (en) 1993-04-14 1997-02-04 Hvistendahl; Douglas D. Multichannel field effect device
US5510630A (en) 1993-10-18 1996-04-23 Westinghouse Electric Corporation Non-volatile random access memory cell constructed of silicon carbide
US5471039A (en) 1994-06-22 1995-11-28 Panda Eng. Inc. Electronic validation machine for documents
JPH0888153A (en) 1994-09-19 1996-04-02 Toshiba Corp Laminated structure wafer and formation thereof
DE4433845A1 (en) 1994-09-22 1996-03-28 Fraunhofer Ges Forschung Method of manufacturing a three-dimensional integrated circuit
FR2729008B1 (en) 1994-12-30 1997-03-21 Sgs Thomson Microelectronics INTEGRATED POWER CIRCUIT
US5981992A (en) 1995-06-07 1999-11-09 International Business Machines Corporation Mechanical supports for very thin stacked capacitor plates
US6750091B1 (en) 1996-03-01 2004-06-15 Micron Technology Diode formation method
WO1997047041A2 (en) * 1996-06-05 1997-12-11 Philips Electronics N.V. Programmable, non-volatile memory device, and method of manufacturing such a device
US5920105A (en) 1996-09-19 1999-07-06 Fujitsu Limited Compound semiconductor field effect transistor having an amorphous gas gate insulation layer
US8018058B2 (en) 2004-06-21 2011-09-13 Besang Inc. Semiconductor memory device
US7470598B2 (en) 2004-06-21 2008-12-30 Sang-Yun Lee Semiconductor layer structure and method of making the same
US7888764B2 (en) 2003-06-24 2011-02-15 Sang-Yun Lee Three-dimensional integrated circuit structure
US7052941B2 (en) 2003-06-24 2006-05-30 Sang-Yun Lee Method for making a three-dimensional integrated circuit structure
FR2755537B1 (en) 1996-11-05 1999-03-05 Commissariat Energie Atomique METHOD FOR MANUFACTURING A THIN FILM ON A SUPPORT AND STRUCTURE THUS OBTAINED
JPH10150176A (en) 1996-11-15 1998-06-02 Tadahiro Omi Semiconductor substrate and its manufacture
US5874760A (en) 1997-01-22 1999-02-23 International Business Machines Corporation 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation
US6225151B1 (en) 1997-06-09 2001-05-01 Advanced Micro Devices, Inc. Nitrogen liner beneath transistor source/drain regions to retard dopant diffusion
US5909618A (en) 1997-07-08 1999-06-01 Micron Technology, Inc. Method of making memory cell with vertical transistor and buried word and body lines
US5936274A (en) 1997-07-08 1999-08-10 Micron Technology, Inc. High density flash memory
US6255731B1 (en) 1997-07-30 2001-07-03 Canon Kabushiki Kaisha SOI bonding structure
JP4623451B2 (en) 1997-07-30 2011-02-02 忠弘 大見 Semiconductor substrate and manufacturing method thereof
FR2767416B1 (en) 1997-08-12 1999-10-01 Commissariat Energie Atomique PROCESS FOR PRODUCING A THIN FILM OF SOLID MATERIAL
FR2773261B1 (en) 1997-12-30 2000-01-28 Commissariat Energie Atomique METHOD FOR THE TRANSFER OF A THIN FILM COMPRISING A STEP OF CREATING INCLUSIONS
US5904507A (en) 1998-02-23 1999-05-18 National Semiconductor Corporation Programmable anti-fuses using laser writing
US5963469A (en) 1998-02-24 1999-10-05 Micron Technology, Inc. Vertical bipolar read access for low voltage memory cell
US6242775B1 (en) 1998-02-24 2001-06-05 Micron Technology, Inc. Circuits and methods using vertical complementary transistors
US6365488B1 (en) 1998-03-05 2002-04-02 Industrial Technology Research Institute Method of manufacturing SOI wafer with buried layer
EP0945901A1 (en) 1998-03-23 1999-09-29 Siemens Aktiengesellschaft DRAM cell array with vertical transistors and process of manufacture
US6545297B1 (en) 1998-05-13 2003-04-08 Micron Technology, Inc. High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown
US6225165B1 (en) 1998-05-13 2001-05-01 Micron Technology, Inc. High density SRAM cell with latched vertical transistors
US6229161B1 (en) 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
US6137128A (en) 1998-06-09 2000-10-24 International Business Machines Corporation Self-isolated and self-aligned 4F-square vertical fet-trench dram cells
JP4476390B2 (en) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6245663B1 (en) 1998-09-30 2001-06-12 Conexant Systems, Inc. IC interconnect structures and methods for making same
US20040017721A1 (en) 1998-10-30 2004-01-29 Schwabe Nikolai Franz Gregoe Magnetic storage device
US5977579A (en) 1998-12-03 1999-11-02 Micron Technology, Inc. Trench dram cell with vertical device and buried word lines
JP2000208771A (en) 1999-01-11 2000-07-28 Hitachi Ltd Semiconductor device, liquid cystal display device, and their manufacturing
US6288954B1 (en) 1999-01-19 2001-09-11 Micron Technology, Inc. Integrated circuit having an on-board reference generator
JP3911585B2 (en) 1999-05-18 2007-05-09 富士通株式会社 Semiconductor device and manufacturing method thereof
US6690038B1 (en) 1999-06-05 2004-02-10 T-Ram, Inc. Thyristor-based device over substrate surface
FR2795865B1 (en) 1999-06-30 2001-08-17 Commissariat Energie Atomique METHOD FOR MAKING A THIN FILM USING PRESSURIZATION
US6225162B1 (en) * 1999-07-06 2001-05-01 Taiwan Semiconductor Manufacturing Company Step-shaped floating poly-si gate to improve gate coupling ratio for flash memory application
US6355520B1 (en) 1999-08-16 2002-03-12 Infineon Technologies Ag Method for fabricating 4F2 memory cells with improved gate conductor structure
US6391658B1 (en) 1999-10-26 2002-05-21 International Business Machines Corporation Formation of arrays of microelectronic elements
US6902987B1 (en) * 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
KR100392166B1 (en) 2000-03-17 2003-07-22 가부시끼가이샤 도시바 Semiconductor device and method for manufacturing the same
US6434932B2 (en) 2000-03-23 2002-08-20 Minolta Co., Ltd. Control mechanism with actuator employing shape memory alloy and method for adjusting servo control of the control mechanism
US6797604B2 (en) 2000-05-08 2004-09-28 International Business Machines Corporation Method for manufacturing device substrate with metal back-gate and structure formed thereby
JP2002359247A (en) 2000-07-10 2002-12-13 Canon Inc Semiconductor member, semiconductor device and manufacturing method therefor
KR100819730B1 (en) 2000-08-14 2008-04-07 샌디스크 쓰리디 엘엘씨 Dense arrays and charge storage devices, and methods for making same
US6621725B2 (en) 2000-08-17 2003-09-16 Kabushiki Kaisha Toshiba Semiconductor memory device with floating storage bulk region and method of manufacturing the same
US6600173B2 (en) 2000-08-30 2003-07-29 Cornell Research Foundation, Inc. Low temperature semiconductor layering and three-dimensional electronic circuits using the layering
US6355501B1 (en) 2000-09-21 2002-03-12 International Business Machines Corporation Three-dimensional chip stacking assembly
US6583440B2 (en) 2000-11-30 2003-06-24 Seiko Epson Corporation Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus
US6559471B2 (en) 2000-12-08 2003-05-06 Motorola, Inc. Quantum well infrared photodetector and method for fabricating same
FR2818010B1 (en) 2000-12-08 2003-09-05 Commissariat Energie Atomique METHOD OF MAKING A THIN LAYER INVOLVING THE INTRODUCTION OF GAS SPECIES
JP2002184993A (en) 2000-12-11 2002-06-28 Sony Corp Semiconductor device
US6576944B2 (en) 2000-12-14 2003-06-10 Infineon Technologies Ag Self-aligned nitride pattern for improved process window
US6635550B2 (en) 2000-12-20 2003-10-21 Texas Instruments Incorporated Semiconductor on insulator device architecture and method of construction
US6570208B2 (en) 2001-01-18 2003-05-27 International Business Machines Corporation 6F2 Trench EDRAM cell with double-gated vertical MOSFET and self-aligned STI
US6713791B2 (en) 2001-01-26 2004-03-30 Ibm Corporation T-RAM array having a planar cell structure and method for fabricating the same
US7456439B1 (en) 2001-03-22 2008-11-25 T-Ram Semiconductor, Inc. Vertical thyristor-based memory with trench isolation and its method of fabrication
US6891205B1 (en) 2001-03-22 2005-05-10 T-Ram, Inc. Stability in thyristor-based memory device
US6897514B2 (en) 2001-03-28 2005-05-24 Matrix Semiconductor, Inc. Two mask floating gate EEPROM and method of making
KR100419021B1 (en) 2001-03-30 2004-02-19 주식회사 하이닉스반도체 Method of fabricating Copper line of semiconductor device
US6492662B2 (en) 2001-04-16 2002-12-10 Ibm Corporation T-RAM structure having dual vertical devices and method for fabricating the same
US6627924B2 (en) 2001-04-30 2003-09-30 Ibm Corporation Memory system capable of operating at high temperatures and method for fabricating the same
US6759282B2 (en) 2001-06-12 2004-07-06 International Business Machines Corporation Method and structure for buried circuits and devices
US6906354B2 (en) 2001-06-13 2005-06-14 International Business Machines Corporation T-RAM cell having a buried vertical thyristor and a pseudo-TFT transfer gate and method for fabricating the same
DE10128718B4 (en) 2001-06-13 2005-10-06 Infineon Technologies Ag Trench capacitor of a DRAM memory cell with metallic collarbear and non-metallic conduction bridge to the select transistor
US6777745B2 (en) 2001-06-14 2004-08-17 General Semiconductor, Inc. Symmetric trench MOSFET device and method of making same
JP3647777B2 (en) 2001-07-06 2005-05-18 株式会社東芝 Method of manufacturing field effect transistor and integrated circuit element
JP2003030980A (en) 2001-07-13 2003-01-31 Toshiba Corp Semiconductor memory
DE10136544B4 (en) * 2001-07-26 2004-02-12 Infineon Technologies Ag Integrated dynamic memory and operating procedures
US6841813B2 (en) 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6525953B1 (en) 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
US6744094B2 (en) 2001-08-24 2004-06-01 Micron Technology Inc. Floating gate transistor with horizontal gate layers stacked next to vertical body
US6815781B2 (en) 2001-09-25 2004-11-09 Matrix Semiconductor, Inc. Inverted staggered thin film transistor with salicided source/drain structures and method of making same
EP1453094A4 (en) 2001-11-07 2006-08-23 Shindengen Electric Mfg Surge protection semiconductor device
US6576532B1 (en) * 2001-11-30 2003-06-10 Motorola Inc. Semiconductor device and method therefor
US7081663B2 (en) 2002-01-18 2006-07-25 National Semiconductor Corporation Gate-enhanced junction varactor with gradual capacitance variation
US20030186521A1 (en) 2002-03-29 2003-10-02 Kub Francis J. Method of transferring thin film functional material to a semiconductor substrate or optimized substrate using a hydrogen ion splitting technique
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
JP4951202B2 (en) * 2002-05-07 2012-06-13 エーエスエム アメリカ インコーポレイテッド Method for manufacturing silicon-on-insulator structure
US6940748B2 (en) 2002-05-16 2005-09-06 Micron Technology, Inc. Stacked 1T-nMTJ MRAM structure
US7042749B2 (en) 2002-05-16 2006-05-09 Micron Technology, Inc. Stacked 1T-nmemory cell structure
JP2004003398A (en) 2002-05-31 2004-01-08 Shin Caterpillar Mitsubishi Ltd Construction machine
US6781907B2 (en) 2002-06-06 2004-08-24 Micron Technology, Inc. Temperature compensated T-RAM memory device and method
US6764774B2 (en) 2002-06-19 2004-07-20 International Business Machines Corporation Structures with improved adhesion to Si and C containing dielectrics and method for preparing the same
US6914286B2 (en) 2002-06-27 2005-07-05 Samsung Electronics Co., Ltd. Semiconductor memory devices using sidewall spacers
KR100738065B1 (en) * 2002-07-10 2007-07-10 삼성전자주식회사 Memory device having one transistor and one resistant material as data storing means and method of driving the same
JP3621695B2 (en) * 2002-07-29 2005-02-16 株式会社東芝 Semiconductor device and element forming substrate
WO2004015764A2 (en) * 2002-08-08 2004-02-19 Leedy Glenn J Vertical system integration
US6838723B2 (en) 2002-08-29 2005-01-04 Micron Technology, Inc. Merged MOS-bipolar capacitor memory cell
US7224024B2 (en) 2002-08-29 2007-05-29 Micron Technology, Inc. Single transistor vertical memory gain cell
TWI320571B (en) 2002-09-12 2010-02-11 Qs Semiconductor Australia Pty Ltd Dynamic nonvolatile random access memory ne transistor cell and random access memory array
US6690039B1 (en) 2002-10-01 2004-02-10 T-Ram, Inc. Thyristor-based device that inhibits undesirable conductive channel formation
US6953953B1 (en) 2002-10-01 2005-10-11 T-Ram, Inc. Deep trench isolation for thyristor-based semiconductor device
US6965129B1 (en) 2002-11-06 2005-11-15 T-Ram, Inc. Thyristor-based device having dual control ports
US7710771B2 (en) 2002-11-20 2010-05-04 The Regents Of The University Of California Method and apparatus for capacitorless double-gate storage
JP3813123B2 (en) * 2002-12-25 2006-08-23 株式会社沖データ Semiconductor device and LED head
US6768156B1 (en) 2003-02-10 2004-07-27 Micron Technology, Inc. Non-volatile random access memory cells associated with thin film constructions
US6812504B2 (en) 2003-02-10 2004-11-02 Micron Technology, Inc. TFT-based random access memory cells comprising thyristors
US6713810B1 (en) 2003-02-10 2004-03-30 Micron Technology, Inc. Non-volatile devices, and electronic systems comprising non-volatile devices
JP2004247545A (en) 2003-02-14 2004-09-02 Nissan Motor Co Ltd Semiconductor device and its fabrication process
US6956256B2 (en) 2003-03-04 2005-10-18 Micron Technology Inc. Vertical gain cell
US6845034B2 (en) 2003-03-11 2005-01-18 Micron Technology, Inc. Electronic systems, constructions for detecting properties of objects, and assemblies for identifying persons
JP4062262B2 (en) 2003-03-20 2008-03-19 松下電器産業株式会社 Head support device and disk device using the same
US7335906B2 (en) 2003-04-03 2008-02-26 Kabushiki Kaisha Toshiba Phase change memory device
US20040228168A1 (en) 2003-05-13 2004-11-18 Richard Ferrant Semiconductor memory device and method of operating same
US6958513B2 (en) 2003-06-06 2005-10-25 Chih-Hsin Wang Floating-gate memory cell having trench structure with ballistic-charge injector, and the array of memory cells
JP3933608B2 (en) 2003-06-30 2007-06-20 株式会社東芝 Semiconductor memory device and semiconductor integrated circuit
JP4282388B2 (en) * 2003-06-30 2009-06-17 株式会社東芝 Semiconductor memory device
US8125003B2 (en) 2003-07-02 2012-02-28 Micron Technology, Inc. High-performance one-transistor memory cell
US6921692B2 (en) 2003-07-07 2005-07-26 Micron Technology, Inc. Methods of forming memory circuitry
US7018873B2 (en) * 2003-08-13 2006-03-28 International Business Machines Corporation Method of making a device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gate
US7205185B2 (en) 2003-09-15 2007-04-17 International Busniess Machines Corporation Self-aligned planar double-gate process by self-aligned oxidation
US6890819B2 (en) 2003-09-18 2005-05-10 Macronix International Co., Ltd. Methods for forming PN junction, one-time programmable read-only memory and fabricating processes thereof
US7195959B1 (en) 2004-10-04 2007-03-27 T-Ram Semiconductor, Inc. Thyristor-based semiconductor device and method of fabrication
US7180135B1 (en) 2003-10-06 2007-02-20 George Mason Intellectual Properties, Inc. Double gate (DG) SOI ratioed logic with intrinsically on symmetric DG-MOSFET load
US6888199B2 (en) 2003-10-07 2005-05-03 International Business Machines Corporation High-density split-gate FinFET
JP4044510B2 (en) 2003-10-30 2008-02-06 株式会社東芝 Semiconductor integrated circuit device
EP1530229B1 (en) * 2003-11-04 2012-04-04 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Beam optical component for charged particle beams
JP2005150156A (en) 2003-11-11 2005-06-09 Toshiba Corp Magnetic storage
US7268373B1 (en) 2003-11-12 2007-09-11 T-Ram Semiconductor, Inc. Thyristor-based memory and its method of operation
US7304327B1 (en) 2003-11-12 2007-12-04 T-Ram Semiconductor, Inc. Thyristor circuit and approach for temperature stability
JP2005150393A (en) * 2003-11-14 2005-06-09 Sharp Corp Submount for light receiving/emitting element
US7015092B2 (en) 2003-12-18 2006-03-21 Infineon Technologies North America Corp. Methods for forming vertical gate transistors providing improved isolation and alignment of vertical gate contacts
US6878991B1 (en) 2004-01-30 2005-04-12 Micron Technology, Inc. Vertical device 4F2 EEPROM memory
US20060010056A1 (en) 2004-02-12 2006-01-12 De La Motte Alain L System and method for high-yield returns in riskless-principal interest rate/yield arbitrage
US7075146B2 (en) 2004-02-24 2006-07-11 Micron Technology, Inc. 4F2 EEPROM NROM memory arrays with vertical devices
US6995456B2 (en) 2004-03-12 2006-02-07 International Business Machines Corporation High-performance CMOS SOI devices on hybrid crystal-oriented substrates
US7049654B2 (en) 2004-03-31 2006-05-23 Intel Corporation Memory with split gate devices and method of fabrication
US20080211061A1 (en) * 2004-04-21 2008-09-04 California Institute Of Technology Method For the Fabrication of GaAs/Si and Related Wafer Bonded Virtual Substrates
JP4429798B2 (en) 2004-05-12 2010-03-10 富士通マイクロエレクトロニクス株式会社 System LSI using fin-type channel FET and manufacturing method thereof
US20050261513A1 (en) * 2004-05-18 2005-11-24 Womack Gary B Process for producing indenol esters or ethers
US7935836B2 (en) * 2004-05-18 2011-05-03 Alexander Graham Fallis Compounds comprising a linear series of five fused carbon rings, and preparation thereof
US7112997B1 (en) 2004-05-19 2006-09-26 Altera Corporation Apparatus and methods for multi-gate silicon-on-insulator transistors
US8399934B2 (en) * 2004-12-20 2013-03-19 Infineon Technologies Ag Transistor device
US7141476B2 (en) * 2004-06-18 2006-11-28 Freescale Semiconductor, Inc. Method of forming a transistor with a bottom gate
US7120048B2 (en) 2004-06-21 2006-10-10 Honeywell International Inc. Nonvolatile memory vertical ring bit and write-read structure
FR2872625B1 (en) 2004-06-30 2006-09-22 Commissariat Energie Atomique MOLECULAR ADHESION ASSEMBLY OF TWO SUBSTRATES, ONE AT LEAST SUPPORTING ELECTRICALLY CONDUCTIVE FILM
FR2872627B1 (en) 2004-06-30 2006-08-18 Commissariat Energie Atomique MOLECULAR ADHESION ASSEMBLY OF TWO SUBSTRATES
WO2006003620A1 (en) 2004-06-30 2006-01-12 Koninklijke Philips Electronics N.V. Method for manufacturing an electric device with a layer of conductive material contacted by nanowire
US7518182B2 (en) 2004-07-20 2009-04-14 Micron Technology, Inc. DRAM layout with vertical FETs and method of formation
US20060034116A1 (en) 2004-08-13 2006-02-16 Lam Chung H Cross point array cell with series connected semiconductor diode and phase change storage media
US7145186B2 (en) 2004-08-24 2006-12-05 Micron Technology, Inc. Memory cell with trenched gated thyristor
US7365385B2 (en) 2004-08-30 2008-04-29 Micron Technology, Inc. DRAM layout with vertical FETs and method of formation
US7458439B2 (en) 2004-08-31 2008-12-02 Caterpillar Inc. Machine control pedestal
US7271052B1 (en) 2004-09-02 2007-09-18 Micron Technology, Inc. Long retention time single transistor vertical memory gain cell
US7259415B1 (en) 2004-09-02 2007-08-21 Micron Technology, Inc. Long retention time single transistor vertical memory gain cell
CN1606170A (en) 2004-09-24 2005-04-13 中国科学院物理研究所 Transistor based on double barrier tunnel junction resonant tunneling effect
US7566974B2 (en) * 2004-09-29 2009-07-28 Sandisk 3D, Llc Doped polysilicon via connecting polysilicon layers
JP4083160B2 (en) * 2004-10-04 2008-04-30 株式会社東芝 Semiconductor memory device and driving method of FBC memory cell
US7476939B2 (en) 2004-11-04 2009-01-13 Innovative Silicon Isi Sa Memory cell having an electrically floating body transistor and programming technique therefor
EP1962340A3 (en) 2004-11-09 2009-12-23 S.O.I. TEC Silicon Method for manufacturing compound material wafers
KR100618877B1 (en) * 2004-11-19 2006-09-08 삼성전자주식회사 Multi-bit non-volatile memory device, method of working the same, and method of fabricating the same
US7326969B1 (en) 2004-12-02 2008-02-05 T-Ram Semiconductor, Inc. Semiconductor device incorporating thyristor-based memory and strained silicon
US7173312B2 (en) 2004-12-15 2007-02-06 International Business Machines Corporation Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification
KR100663359B1 (en) 2005-03-31 2007-01-02 삼성전자주식회사 One transistor floating body DRAM cell with recess channel transistor structure and method of fabricating the same
US7816728B2 (en) 2005-04-12 2010-10-19 International Business Machines Corporation Structure and method of fabricating high-density trench-based non-volatile random access SONOS memory cells for SOC applications
KR100702014B1 (en) 2005-05-03 2007-03-30 삼성전자주식회사 One-transistor floating-body DRAM devices having vertical channel transistor structure and methods of fabricating the same
US7279740B2 (en) 2005-05-12 2007-10-09 Micron Technology, Inc. Band-engineered multi-gated non-volatile memory device with enhanced attributes
US7120046B1 (en) 2005-05-13 2006-10-10 Micron Technology, Inc. Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines
JP4696964B2 (en) 2005-07-15 2011-06-08 ソニー株式会社 Semiconductor device for memory
US7579623B2 (en) * 2005-07-22 2009-08-25 Translucent, Inc. Stacked transistors and process
US7768051B2 (en) 2005-07-25 2010-08-03 Micron Technology, Inc. DRAM including a vertical surround gate transistor
US7776715B2 (en) 2005-07-26 2010-08-17 Micron Technology, Inc. Reverse construction memory cell
US7538000B2 (en) 2005-07-28 2009-05-26 Freescale Semiconductor, Inc. Method of forming double gate transistors having varying gate dielectric thicknesses
US7511332B2 (en) 2005-08-29 2009-03-31 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical flash memory
US20070047364A1 (en) 2005-08-31 2007-03-01 International Business Machines Corporation Methods and apparatus for varying a supply voltage or reference voltage using independent control of diode voltage in asymmetrical double-gate devices
US7416943B2 (en) * 2005-09-01 2008-08-26 Micron Technology, Inc. Peripheral gate stacks and recessed array gates
KR100673012B1 (en) 2005-09-02 2007-01-24 삼성전자주식회사 Double-gate type dynamic random access memory device having vertical channel transistors and method of fabricating the same
US7227233B2 (en) 2005-09-12 2007-06-05 International Business Machines Corporation Silicon-on-insulator (SOI) Read Only Memory (ROM) array and method of making a SOI ROM
JP4599259B2 (en) * 2005-09-20 2010-12-15 株式会社東芝 Magnetic element and magnetic signal processing apparatus using the same
KR100675285B1 (en) 2005-10-10 2007-01-29 삼성전자주식회사 Semiconductor device having vertical transistor and method of fabricating the same
KR100660881B1 (en) 2005-10-12 2006-12-26 삼성전자주식회사 Semiconductor devices comprising transistors having vertical channel and method of manufacturing the same
KR100663368B1 (en) 2005-12-07 2007-01-02 삼성전자주식회사 Semiconductor memory device, and data write and read method of the same
US7786505B1 (en) 2005-12-16 2010-08-31 T-Ram Semiconductor, Inc. Reduction of charge leakage from a thyristor-based memory cell
US7563681B2 (en) * 2006-01-27 2009-07-21 Freescale Semiconductor, Inc. Double-gated non-volatile memory and methods for forming thereof
JP5011748B2 (en) 2006-02-24 2012-08-29 株式会社デンソー Semiconductor device
US7439594B2 (en) * 2006-03-16 2008-10-21 Micron Technology, Inc. Stacked non-volatile memory with silicon carbide-based amorphous silicon thin film transistors
US8501581B2 (en) 2006-03-29 2013-08-06 Micron Technology, Inc. Methods of forming semiconductor constructions
CN100454921C (en) 2006-03-29 2009-01-21 华为技术有限公司 Digital copyright protecting method and system
US8008144B2 (en) 2006-05-11 2011-08-30 Micron Technology, Inc. Dual work function recessed access device and methods of forming
US20080003778A1 (en) * 2006-06-13 2008-01-03 Rensselaer Polytechnic Institute Low-temperature welding with nano structures
JP2008010503A (en) 2006-06-27 2008-01-17 Toshiba Corp Semiconductor memory device and its manufacturing method
KR100745934B1 (en) 2006-06-30 2007-08-02 주식회사 하이닉스반도체 Semiconductor device and method for forming the same
US7589995B2 (en) 2006-09-07 2009-09-15 Micron Technology, Inc. One-transistor memory cell with bias gate
US7410856B2 (en) 2006-09-14 2008-08-12 Micron Technology, Inc. Methods of forming vertical transistors
US7851859B2 (en) 2006-11-01 2010-12-14 Samsung Electronics Co., Ltd. Single transistor memory device having source and drain insulating regions and method of fabricating the same
US7592209B2 (en) 2006-11-13 2009-09-22 Intel Corporation Integration of a floating body memory on SOI with logic transistors on bulk substrate
US7619917B2 (en) 2006-11-28 2009-11-17 Qimonda North America Corp. Memory cell with trigger element
JP2008135670A (en) * 2006-11-29 2008-06-12 Elpida Memory Inc Semiconductor device, and method of manufacturing the same
US8217435B2 (en) 2006-12-22 2012-07-10 Intel Corporation Floating body memory cell having gates favoring different conductivity type regions
US7888742B2 (en) * 2007-01-10 2011-02-15 International Business Machines Corporation Self-aligned metal-semiconductor alloy and metallization for sub-lithographic source and drain contacts
JP2008177273A (en) 2007-01-17 2008-07-31 Toshiba Corp Semiconductor memory device and method of manufacturing the same
KR100852233B1 (en) * 2007-02-21 2008-08-13 삼성전자주식회사 Method of fomring a vertical diode and method of manufacturing a phase-change memory device using the same
US8368137B2 (en) 2007-06-26 2013-02-05 Sandisk Technologies Inc. Dual bit line metal layers for non-volatile memory
US8159035B2 (en) * 2007-07-09 2012-04-17 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gates of PMOS devices having high work functions
US7816216B2 (en) 2007-07-09 2010-10-19 Micron Technology, Inc. Semiconductor device comprising transistor structures and methods for forming same
US7969808B2 (en) 2007-07-20 2011-06-28 Samsung Electronics Co., Ltd. Memory cell structures, memory arrays, memory devices, memory controllers, and memory systems, and methods of manufacturing and operating the same
KR100881825B1 (en) 2007-07-27 2009-02-03 주식회사 하이닉스반도체 Semiconductor device and method for fabricating the same
JP4580966B2 (en) * 2007-08-24 2010-11-17 株式会社東芝 Laminated body having Heusler alloy, spin MOS field effect transistor and tunnel magnetoresistive element using the laminated body
US9129845B2 (en) 2007-09-19 2015-09-08 Micron Technology, Inc. Buried low-resistance metal word lines for cross-point variable-resistance material memories
US7439149B1 (en) 2007-09-26 2008-10-21 International Business Machines Corporation Structure and method for forming SOI trench memory with single-sided strap
US20090108351A1 (en) 2007-10-26 2009-04-30 International Business Machines Corporation Finfet memory device with dual separate gates and method of operation
US7719869B2 (en) 2007-11-19 2010-05-18 Qimonda Ag Memory cell array comprising floating body memory cells
KR101027345B1 (en) 2007-11-26 2011-04-11 주식회사 하이닉스반도체 Electorstatic Discharge Device Capable of Controlling Pin Capacitance
KR20090054245A (en) * 2007-11-26 2009-05-29 삼성전자주식회사 Floating body dram device and method of fabricating the same
DE102007057728B4 (en) 2007-11-30 2014-04-30 Infineon Technologies Ag Method for producing a semiconductor device with a short circuit structure
US7940558B2 (en) 2007-12-21 2011-05-10 Qimonda Ag Integrated circuit comprising a thyristor and method of controlling a memory cell comprising a thyristor
KR100950472B1 (en) 2007-12-28 2010-03-31 주식회사 하이닉스반도체 Method for manufacturing semiconductor device having 4F2 transistor
US8558220B2 (en) 2007-12-31 2013-10-15 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US20090173984A1 (en) 2008-01-08 2009-07-09 Qimonda Ag Integrated circuit and method of manufacturing an integrated circuit
US20090179262A1 (en) 2008-01-16 2009-07-16 Qimonda Ag Floating Body Memory Cell with a Non-Overlapping Gate Electrode
US7795691B2 (en) 2008-01-25 2010-09-14 Cree, Inc. Semiconductor transistor with P type re-grown channel layer
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US7742324B2 (en) 2008-02-19 2010-06-22 Micron Technology, Inc. Systems and devices including local data lines and methods of using, making, and operating the same
US20090246952A1 (en) 2008-03-28 2009-10-01 Tokyo Electron Limited Method of forming a cobalt metal nitride barrier film
US8030634B2 (en) 2008-03-31 2011-10-04 Macronix International Co., Ltd. Memory array with diode driver and method for fabricating the same
US7910451B2 (en) 2008-04-04 2011-03-22 International Business Machines Corporation Simultaneous buried strap and buried contact via formation for SOI deep trench capacitor
US7646847B2 (en) 2008-05-01 2010-01-12 Bruker Axs Inc. Handheld two-dimensional X-ray diffractometer
KR20090132872A (en) 2008-06-23 2009-12-31 삼성전자주식회사 Semiconductor device and semiconductor substrate
CN101621036B (en) 2008-07-02 2011-08-17 中芯国际集成电路制造(上海)有限公司 Semiconductor device with amorphous silicon MAS memory cell structure and method for manufacturing same
KR101498873B1 (en) 2008-07-08 2015-03-04 삼성전자주식회사 Method for operating an memory device having characters of DRAM and Non-volatile memory
KR101159879B1 (en) 2008-07-14 2012-06-25 에스케이하이닉스 주식회사 High integrated semiconductor memory device
US20100044670A1 (en) 2008-08-19 2010-02-25 Peiching Ling Semiconductor device structures having single-crystalline switching device on conducting lines and methods thereof
US8130537B2 (en) 2008-09-09 2012-03-06 Qimonda Ag Phase change memory cell with MOSFET driven bipolar access device
KR20100070835A (en) 2008-12-18 2010-06-28 삼성전자주식회사 Memory cell having thyristor and memory device havign its
US8614131B2 (en) 2009-02-03 2013-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned static random access memory (SRAM) on metal gate
KR101554531B1 (en) 2009-02-12 2015-09-21 삼성전자주식회사 Semiconductor device and method of manufacturing the semiconductor device
US8405121B2 (en) 2009-02-12 2013-03-26 Infineon Technologies Ag Semiconductor devices
KR101073643B1 (en) 2009-02-19 2011-10-14 서울대학교산학협력단 High performance 1T-DRAM cell device and manufacturing method thereof
US8148780B2 (en) 2009-03-24 2012-04-03 Micron Technology, Inc. Devices and systems relating to a memory cell having a floating body
US7929343B2 (en) 2009-04-07 2011-04-19 Micron Technology, Inc. Methods, devices, and systems relating to memory cells having a floating body
KR101077453B1 (en) 2009-03-31 2011-10-26 주식회사 하이닉스반도체 Method for Forming Pattern of Semiconductor device
US8362482B2 (en) * 2009-04-14 2013-01-29 Monolithic 3D Inc. Semiconductor device and structure
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8183126B2 (en) 2009-07-13 2012-05-22 Seagate Technology Llc Patterning embedded control lines for vertically stacked semiconductor elements
US10566462B2 (en) 2009-07-30 2020-02-18 Infineon Technologies Austria Ag Bipolar semiconductor device and manufacturing method
US8476145B2 (en) 2010-10-13 2013-07-02 Monolithic 3D Inc. Method of fabricating a semiconductor device and structure
US8588025B2 (en) * 2009-12-30 2013-11-19 Westerngeco L.L.C. Method and apparatus for acquiring wide-azimuth marine data using simultaneous shooting
US8836036B2 (en) 2010-01-05 2014-09-16 Globalfoundries Singapore Pte. Ltd. Method for fabricating semiconductor devices using stress engineering
US9608119B2 (en) 2010-03-02 2017-03-28 Micron Technology, Inc. Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
US8507966B2 (en) 2010-03-02 2013-08-13 Micron Technology, Inc. Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
US8288795B2 (en) 2010-03-02 2012-10-16 Micron Technology, Inc. Thyristor based memory cells, devices and systems including the same and methods for forming the same
US9646869B2 (en) 2010-03-02 2017-05-09 Micron Technology, Inc. Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
US8513722B2 (en) 2010-03-02 2013-08-20 Micron Technology, Inc. Floating body cell structures, devices including same, and methods for forming same
JP5394360B2 (en) 2010-03-10 2014-01-22 東京エレクトロン株式会社 Vertical heat treatment apparatus and cooling method thereof
KR20110102738A (en) 2010-03-11 2011-09-19 삼성전자주식회사 Vertical channel transistors and methods for fabricating vertical channel transistors
KR101670451B1 (en) 2010-03-12 2016-10-31 삼성전자주식회사 Buried electric wiring line substrate, method of forming the same, semiconductor device and method of manufacturing the same
US8552490B2 (en) * 2010-06-18 2013-10-08 United Microelectronics Corp. Nonvolatile memory device with a high-K charge storage layer having a U-shaped,cross-sectional structure
US8598621B2 (en) 2011-02-11 2013-12-03 Micron Technology, Inc. Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor
US8435859B2 (en) 2011-02-16 2013-05-07 Micron Technology, Inc. Methods of forming electrical contacts
US8952418B2 (en) 2011-03-01 2015-02-10 Micron Technology, Inc. Gated bipolar junction transistors
US8519431B2 (en) 2011-03-08 2013-08-27 Micron Technology, Inc. Thyristors
US8518812B2 (en) 2011-05-23 2013-08-27 Micron Technology, Inc. Methods of forming electrical contacts
US8772848B2 (en) 2011-07-26 2014-07-08 Micron Technology, Inc. Circuit structures, memory circuitry, and methods
US8530312B2 (en) 2011-08-08 2013-09-10 Micron Technology, Inc. Vertical devices and methods of forming
US8962465B2 (en) 2012-10-15 2015-02-24 Micron Technology, Inc. Methods of forming gated devices
US9214389B2 (en) 2014-04-29 2015-12-15 Micron Technology, Inc. Methods of forming memory arrays
US9224738B1 (en) 2014-08-18 2015-12-29 Micron Technology, Inc. Methods of forming an array of gated devices
US9673054B2 (en) 2014-08-18 2017-06-06 Micron Technology, Inc. Array of gated devices and methods of forming an array of gated devices
US9209187B1 (en) 2014-08-18 2015-12-08 Micron Technology, Inc. Methods of forming an array of gated devices

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