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SG10201405522RA - Integrated capacitive and inductive power sources for a plasma etching chamber - Google Patents

Integrated capacitive and inductive power sources for a plasma etching chamber

Info

Publication number
SG10201405522RA
SG10201405522RA SG10201405522RA SG10201405522RA SG10201405522RA SG 10201405522R A SG10201405522R A SG 10201405522RA SG 10201405522R A SG10201405522R A SG 10201405522RA SG 10201405522R A SG10201405522R A SG 10201405522RA SG 10201405522R A SG10201405522R A SG 10201405522RA
Authority
SG
Singapore
Prior art keywords
power sources
plasma etching
inductive power
etching chamber
integrated capacitive
Prior art date
Application number
SG10201405522RA
Inventor
Rajinder Dhindsa
Mukund Srinivasan
Kenji Takeshita
Alexei Marakhtanov
Andreas Fischer
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201405522RA publication Critical patent/SG10201405522RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
SG10201405522RA 2006-02-27 2007-02-16 Integrated capacitive and inductive power sources for a plasma etching chamber SG10201405522RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/363,703 US8911590B2 (en) 2006-02-27 2006-02-27 Integrated capacitive and inductive power sources for a plasma etching chamber

Publications (1)

Publication Number Publication Date
SG10201405522RA true SG10201405522RA (en) 2014-10-30

Family

ID=38442879

Family Applications (2)

Application Number Title Priority Date Filing Date
SG201101340-6A SG170030A1 (en) 2006-02-27 2007-02-16 Integrated capacitive and inductive power sources for a plasma etching chamber
SG10201405522RA SG10201405522RA (en) 2006-02-27 2007-02-16 Integrated capacitive and inductive power sources for a plasma etching chamber

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG201101340-6A SG170030A1 (en) 2006-02-27 2007-02-16 Integrated capacitive and inductive power sources for a plasma etching chamber

Country Status (8)

Country Link
US (1) US8911590B2 (en)
EP (1) EP1989007A4 (en)
JP (1) JP5215875B2 (en)
KR (1) KR101342319B1 (en)
CN (1) CN101426949B (en)
SG (2) SG170030A1 (en)
TW (2) TWI460785B (en)
WO (1) WO2007100528A2 (en)

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US7879184B2 (en) * 2006-06-20 2011-02-01 Lam Research Corporation Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
US8398778B2 (en) 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
CN101687229B (en) * 2007-07-12 2012-01-18 应用材料股份有限公司 Apparatus and method for centering a substrate in a process chamber
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US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US20110204023A1 (en) * 2010-02-22 2011-08-25 No-Hyun Huh Multi inductively coupled plasma reactor and method thereof
US20120258607A1 (en) * 2011-04-11 2012-10-11 Lam Research Corporation E-Beam Enhanced Decoupled Source for Semiconductor Processing
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US20130098390A1 (en) * 2011-10-25 2013-04-25 Infineon Technologies Ag Device for processing a carrier and a method for processing a carrier
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US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
KR101971312B1 (en) * 2011-11-23 2019-04-22 램 리써치 코포레이션 Multi zone gas injection upper electrode system
KR102011535B1 (en) 2011-11-24 2019-08-16 램 리써치 코포레이션 Plasma processing chamber with flexible symmetric rf return strap
US20160284523A1 (en) * 2013-03-28 2016-09-29 The Chemours Company Fc, Llc Hydrofluoroolefin Etching Gas Mixtures
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KR102278074B1 (en) * 2014-06-30 2021-07-19 세메스 주식회사 Apparatus and method for treating substrate
CN106548914B (en) * 2015-09-17 2018-10-30 中微半导体设备(上海)有限公司 A kind of apparatus for processing plasma and its cleaning system and method
CN106611691B (en) * 2015-10-26 2018-10-12 中微半导体设备(上海)有限公司 Multifrequency pulse plasma processing apparatus and its processing method and cleaning method
CN106920726B (en) * 2015-12-24 2018-10-12 中微半导体设备(上海)有限公司 Plasma processing apparatus and its cleaning method
CN107154332B (en) * 2016-03-03 2019-07-19 中微半导体设备(上海)股份有限公司 A kind of plasma processing apparatus and method
CN107369604B (en) * 2016-05-12 2019-10-11 北京北方华创微电子装备有限公司 Reaction chamber and semiconductor processing equipment
CN108227413B (en) * 2016-12-15 2023-12-08 中微半导体设备(上海)股份有限公司 Photoresist removing device and cleaning method thereof
CN110121760B (en) 2016-12-27 2022-08-05 瑞士艾发科技 Vacuum plasma workpiece processing equipment
CN109524324B (en) * 2017-09-19 2021-01-26 长鑫存储技术有限公司 Semiconductor etching equipment
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Also Published As

Publication number Publication date
SG170030A1 (en) 2011-04-29
WO2007100528A3 (en) 2008-10-23
US8911590B2 (en) 2014-12-16
WO2007100528A2 (en) 2007-09-07
KR101342319B1 (en) 2013-12-16
TWI460785B (en) 2014-11-11
EP1989007A4 (en) 2010-09-22
TW201203359A (en) 2012-01-16
TWI447807B (en) 2014-08-01
CN101426949B (en) 2015-05-27
JP5215875B2 (en) 2013-06-19
JP2009528676A (en) 2009-08-06
TW200802591A (en) 2008-01-01
KR20080106417A (en) 2008-12-05
EP1989007A2 (en) 2008-11-12
CN101426949A (en) 2009-05-06
US20070199658A1 (en) 2007-08-30

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