SE9503198L - Polysilicon resistor and method for making one - Google Patents
Polysilicon resistor and method for making oneInfo
- Publication number
- SE9503198L SE9503198L SE9503198A SE9503198A SE9503198L SE 9503198 L SE9503198 L SE 9503198L SE 9503198 A SE9503198 A SE 9503198A SE 9503198 A SE9503198 A SE 9503198A SE 9503198 L SE9503198 L SE 9503198L
- Authority
- SE
- Sweden
- Prior art keywords
- resistor
- donor
- resistor body
- atoms
- type
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 2
- 229920005591 polysilicon Polymers 0.000 title 1
- 239000000463 material Substances 0.000 abstract 4
- 239000002019 doping agent Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/47—Resistors having no potential barriers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
A resistor has a resistor body (11) of polycrystalline silicon and electrical terminals (23, 15) arranged on and/or in the resistor body (11), so that a resistor portion (13) is formed between the terminals and produces the useful resistance of the resistor. The material of the resistor body is doped with dopants of both acceptor type and donor type. In order to block the charge carrier traps at grain boundaries to a sufficient degree and thereby give the resistor a good stability, also when it is exposed to different substances during the manufacture, the doping is made with donors in such a high concentration, that if only the donor atoms would be present in the material and substantially no acceptor atoms, the material would be to be considered as more or less heavily doped. In particular donor atoms are to be provided in the resistor body in a concentration of at least 3<.>10<19> cm<-3>, in the case where the material has an average grain size of 1000 ANGSTROM and phosphorus is used as a dopant of donor type.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9503198A SE504969C2 (en) | 1995-09-14 | 1995-09-14 | Polysilicon resistor and method for making one |
| EP96931342A EP0850484A1 (en) | 1995-09-14 | 1996-09-13 | A polysilicon resistor and a method of manufacturing it |
| AU70048/96A AU7004896A (en) | 1995-09-14 | 1996-09-13 | A polysilicon resistor and a method of manufacturing it |
| KR1019980701055A KR19990036386A (en) | 1995-09-14 | 1996-09-13 | Polysilicon Resistors and Manufacturing Method Thereof |
| PCT/SE1996/001148 WO1997010606A1 (en) | 1995-09-14 | 1996-09-13 | A polysilicon resistor and a method of manufacturing it |
| JP9511899A JPH11512565A (en) | 1995-09-14 | 1996-09-13 | Polysilicon resistor and method of manufacturing the same |
| CN96196923A CN1196136A (en) | 1995-09-14 | 1996-09-13 | Polysilicon resistor and method of manufacturing it |
| CA002229451A CA2229451A1 (en) | 1995-09-14 | 1996-09-13 | A polysilicon resistor and a method of manufacturing it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9503198A SE504969C2 (en) | 1995-09-14 | 1995-09-14 | Polysilicon resistor and method for making one |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE9503198D0 SE9503198D0 (en) | 1995-09-14 |
| SE9503198L true SE9503198L (en) | 1997-03-15 |
| SE504969C2 SE504969C2 (en) | 1997-06-02 |
Family
ID=20399492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9503198A SE504969C2 (en) | 1995-09-14 | 1995-09-14 | Polysilicon resistor and method for making one |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP0850484A1 (en) |
| JP (1) | JPH11512565A (en) |
| KR (1) | KR19990036386A (en) |
| CN (1) | CN1196136A (en) |
| AU (1) | AU7004896A (en) |
| CA (1) | CA2229451A1 (en) |
| SE (1) | SE504969C2 (en) |
| WO (1) | WO1997010606A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE511816C3 (en) | 1996-06-17 | 2000-01-24 | Ericsson Telefon Ab L M | Resistors comprising a polycrystalline silicon resistor body and a process for producing such a |
| SE513116C2 (en) | 1998-11-13 | 2000-07-10 | Ericsson Telefon Ab L M | Polysilicon resistors and ways of making them |
| CN100378958C (en) * | 2003-12-22 | 2008-04-02 | 上海贝岭股份有限公司 | Method for making polysilicon high-ohmic resistor of integrated circuit |
| US7285472B2 (en) * | 2005-01-27 | 2007-10-23 | International Business Machines Corporation | Low tolerance polysilicon resistor for low temperature silicide processing |
| US7691717B2 (en) | 2006-07-19 | 2010-04-06 | International Business Machines Corporation | Polysilicon containing resistor with enhanced sheet resistance precision and method for fabrication thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60109260A (en) * | 1983-11-15 | 1985-06-14 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Compensated polycrystalline silicon resistive element |
-
1995
- 1995-09-14 SE SE9503198A patent/SE504969C2/en not_active IP Right Cessation
-
1996
- 1996-09-13 EP EP96931342A patent/EP0850484A1/en not_active Withdrawn
- 1996-09-13 JP JP9511899A patent/JPH11512565A/en active Pending
- 1996-09-13 AU AU70048/96A patent/AU7004896A/en not_active Abandoned
- 1996-09-13 CN CN96196923A patent/CN1196136A/en active Pending
- 1996-09-13 CA CA002229451A patent/CA2229451A1/en not_active Abandoned
- 1996-09-13 WO PCT/SE1996/001148 patent/WO1997010606A1/en not_active Application Discontinuation
- 1996-09-13 KR KR1019980701055A patent/KR19990036386A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| CA2229451A1 (en) | 1997-03-20 |
| KR19990036386A (en) | 1999-05-25 |
| WO1997010606A1 (en) | 1997-03-20 |
| CN1196136A (en) | 1998-10-14 |
| AU7004896A (en) | 1997-04-01 |
| SE504969C2 (en) | 1997-06-02 |
| EP0850484A1 (en) | 1998-07-01 |
| SE9503198D0 (en) | 1995-09-14 |
| JPH11512565A (en) | 1999-10-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1843404A3 (en) | Zinc oxide films containing p-type dopant and process for preparing same | |
| WO2001043165A3 (en) | Oxide films containing p-type dopant and process for preparing same | |
| TW374226B (en) | Graded-channel semiconductor device and method of manufacturing the same | |
| EP1215310A4 (en) | P-TYPE ZINCOXIDE SINGLE CRYSTAL WITH LOW RESISTANCE AND PRODUCTION METHOD THEREFOR | |
| SE9602395D0 (en) | Stabilized polysilicon resistor and ways of making it | |
| EP0130311A3 (en) | Stable suspensions of boron, phosphorus, antimony and arsenic dopants | |
| SE9503198L (en) | Polysilicon resistor and method for making one | |
| EP0332101A3 (en) | Semiconductor device having a region doped to a level exceeding the solubility limit | |
| EP0343360A3 (en) | Method for fabricating shallow junctions | |
| Iseler et al. | Titanium‐doped semi‐insulating InP grown by the liquid encapsulated Czochralski method | |
| WO1999026293A3 (en) | Semiconductor component and manufacturing method for semiconductor component | |
| GB1209543A (en) | Improvements in or relating to semiconductor devices | |
| EP0710980A3 (en) | Soi substrate | |
| JPS5583256A (en) | Semiconductor integrated circuit | |
| EP0165507A3 (en) | Phosphoric triamides and polymers thereof as dopants | |
| JPS6477167A (en) | Hetero-bipolar transistor | |
| US3560279A (en) | Method of doping semiconductor material | |
| US3975756A (en) | Gadolinium doped germanium | |
| KR950007771Y1 (en) | Resistor using amorphous silicon | |
| JPS56108271A (en) | Floating gate type non volatile semiconductor memory device | |
| KR900019251A (en) | Semiconductor Resistance Device and Manufacturing Process | |
| KR890017783A (en) | Semiconductor device | |
| EP0807978A3 (en) | A method of fabricating a layer of high p-type conductivity in a semiconductor component and a semiconductor component having such a layer | |
| KR910019131A (en) | Manufacturing Method of Silicon Dioxide Load Resistor | |
| JPH01260856A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |