SE1551226A1 - A high frequency package and a method relating thereto - Google Patents
A high frequency package and a method relating thereto Download PDFInfo
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- SE1551226A1 SE1551226A1 SE1551226A SE1551226A SE1551226A1 SE 1551226 A1 SE1551226 A1 SE 1551226A1 SE 1551226 A SE1551226 A SE 1551226A SE 1551226 A SE1551226 A SE 1551226A SE 1551226 A1 SE1551226 A1 SE 1551226A1
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- 230000000903 blocking effect Effects 0.000 claims abstract description 28
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- 239000000523 sample Substances 0.000 claims abstract description 10
- 230000000737 periodic effect Effects 0.000 claims description 24
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/16—Auxiliary devices for mode selection, e.g. mode suppression or mode promotion; for mode conversion
- H01P1/162—Auxiliary devices for mode selection, e.g. mode suppression or mode promotion; for mode conversion absorbing spurious or unwanted modes of propagation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2005—Electromagnetic photonic bandgaps [EPB], or photonic bandgaps [PBG]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/12—Hollow waveguides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
- H01P5/107—Hollow-waveguide/strip-line transitions
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W36/00—Hand-off or reselection arrangements
- H04W36/0005—Control or signalling for completing the hand-off
- H04W36/0011—Control or signalling for completing the hand-off for data sessions of end-to-end connection
- H04W36/0033—Control or signalling for completing the hand-off for data sessions of end-to-end connection with transfer of context information
- H04W36/0038—Control or signalling for completing the hand-off for data sessions of end-to-end connection with transfer of context information of security context information
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6683—High-frequency adaptations for monolithic microwave integrated circuit [MMIC]
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W88/00—Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
- H04W88/02—Terminal devices
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W88/00—Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
- H04W88/08—Access point devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/0056—Casings specially adapted for microwave applications
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- Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Computer Networks & Wireless Communication (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computer Security & Cryptography (AREA)
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- Microwave Amplifiers (AREA)
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Abstract
The present invention relates to a high frequency package (100) comprising a circuit arrangement (30) and a waveguide structure in which said circuit arrangement (30) is arranged. The waveguide structure comprises a split-block assembly comprising a first waveguide block portion (10) and a second waveguide block portion (20) comprising at least one waveguide port. Said circuit (30) is provided in or on one of said waveguide block portions (10), and a blocking arrangement (22) is provided in the other waveguide block portion (20) such as to face the circuit arrangement (30) in an assembled or mounted state of the split-block assembly for preventing leakage of undesired waveguide modes into the circuit (30) .It further comprises at least one probe integrated onto the circuit arrangement (30) forming a waveguide-to-microstrip transition (11,12) between the circuit arrangement (30) and said at least one waveguide.(Fig. 2)
Description
V1 P2SE AB/ab 2015-09-22 Title:A HIGH FREQUENCY PACKAGE AND A METHOD RELATING THERETO TECHNICAL FIELD The present invention relates to a high frequency packagecomprising a microwave circuit arrangement, particularly, but notexclusively, an active circuit arrangement; even more particularlyone or more MMICs (Monolithic Microwave Integrated Circuit),arranged in a waveguide structure having the features of the firstpart of claim 1.
The invention also relates to a method. for providing' a highfrequency package comprising a microwave circuit arrangement, e.g.one or more active MMICs, and a waveguide structure including atleast one waveguide port having the features of the first part of claim 17.
BACKGROUND The use of high frequencies is steadily gaining more interest. Upto about 67 GHz coaxial cables can be used as interconnects betweenmicrowave components.
For higher frequencies, above 67 GHz, waveguides need to be used.Several problems are associated with the construction of a packagecontaining a high-frequency circuit that needs to be interfaced toa waveguide port.
Normally, for such high frequencies, a separate waveguidetransition provides the interface between the waveguide and the circuit. The waveguide transition converts the waveguide TE10 mode lO to a microstrip or coplanar mode. The second requirement is thatthe waveguide transition is sufficiently narrow to prevent leakageof waveguide modes into the circuit cavity. Such a leakage resultsin direct loss and appearance of resonances within the circuitcavity that can result in a positive feedback between the ports ofand therefore the circuit (for example in the case of amplifier) cause oscillations.
However a separate waveguide transition requires a bond-wire or a flip-chip connection. Such a connection contributes with a substantial reactance at high frequencies, causing extra lossesand reduction in the achievable bandwidth. Another disadvantage ofhaving a separate waveguide transition is that it complicates thepackaging' process as it requires extra steps associated. withmounting and accurate alignment of the transition circuit with respect to the circuit, an MMIC. Yet another disadvantage in e.g.using bond-wire connection at high frequencies is that the bond-pad contact area of the MMIC becomes very small at high frequenciesand bonding often destroys the high-frequency pad affecting the yield of the process.
Attempts to integrate the waveguide transition onto the circuit(e.g. MMIC) has shown not to be possible in most cases since thewaveguide transition has to be sufficiently narrow in order toprevent leakage of waveguide mode into the circuit (MMIC) cavity.The width of the waveguide transition needs to be below Å/4 forthe highest frequency. The MMIC, however, in most cases, cannot bemade sufficiently' narrow to match. the width. of the waveguidetransition.
SUMMARY lO It is therefore an object of the present invention to provide ahigh frequency' package comprising' a circuit arrangement, e.g. comprising one or more active MMICs (Monolithic MicrowaveIntegrated Circuit), or one or more active and/or passive circuitsin general, and a waveguide structure comprising at least onewaveguide port as initially referred to through which one or more of the above-mentioned problems can be overcome.
Particularly it is an object of the present invention to providea high frequency package through which the need to use bond-wireconnections at the high frequency port(s) can be avoided.It is also a particular object to provide high frequency packagehaving a high, optimized, yield not affected by bonding onto small bond-pad areas.
Particularly it is an object to provide a package comprising animproved MMIC RF connection avoiding losses due to the presence of bond-wires and external waveguide transitions.
It is also an object to provide a high frequency package which can be easily packaged, and which does not require alignment of more than one circuit.
It is also an object to provide a high frequency package which easy and cheap to fabricate, and which allows assembly in a fast and easy manner.It is a particular object to provide a high frequency package which can be used for high frequencies, above 67 GHz, without any risk of leakage of undesired waveguide modes into the circuit arrangement, e.g. a MMIC (cavity).
A most particular object is to provide a high frequency package which comprises one or more MMICs of arbitrary size, i.e. also large MMICs, and even more generally, circuits of many different kinds including hybrid circuits.
It is also an object to provide a high frequency package which is reliable and precise in operation.
Therefore a high frequency package as initially referred to is provided which has the characterizing features of claim 1.
Still further it is an object to provide a method for providing ahigh. frequency' package comprising' a circuit arrangement and. awaveguide package having the features of the first part of claim17 through which one or more of the above mentioned problems are OVGICOITIG .
Particularly it is an object to provide a method for providing an improved circuit RF performance, particularly MMIC RF connection.
Therefor a method as initially referred is provided which has thecharacterizing features of claim 17.embodiments Advantageous are given. by the respective appended dependent claims.
BRIEF DESCRIPTION OF THE DRAWINGS lO The invention will in the following be further described in a non-limiting manner, and with reference to the accompanying drawings, in which: Fig. l is aa view i11 perspective of za high frequency packagecomprising a waveguide split block assembly in anassembled state according to a first embodiment of thepresent invention, Fig. 2 is a view in perspective of the high frequency packageof Fig.l in a non-assembled, or partly assembled, state, Fig. 3 is a view in a somewhat enlarged scale of the of thebottom part of the waveguide split block of Figs. l and2, Fig. 4 is a view of the bottom part of the waveguide split blockincluding waveguide-to microstrip transitions, Fig. 4A is an enlarged view of the section indicated A in Fig.4,showing a waveguide-to-microstrip transition more indetail, Fig. 5 is a view in a somewhat enlarged scale of the of the toppart of the waveguide split block of Figs. l and 2, Fig. 5A is an enlarged view of the section indicated B in Fig.5, illustrating a blocking structure according to the invention more in detail, and Fig. 6 is a schematic view in perspective of an alternative highfrequency package iJ1 a non-assembled, or partlyassembled, state according to the invention.
DETAILED DESCRIPTION Fig. 1 schematically illustrates a high (RF) frequency package 100 comprising a circuit arrangement, here an MMIC (Monolithic Microwave Integrated. Circuit) (not shown in Fig.1; cf. Fig.2) arranged in a waveguide structure according to one embodiment ofthe invention. It should be clear that the invention is not limited to MMIC circuits, but it may alternatively' be other circuit arrangements, e.g. where one or several MMICs or hybrid circuits are connected, or mounted on a carrier and interconnected. The circuit arrangement comprising one or more circuits, active or passive, is in the following also simply denoted “circuit”.
Figs. 1 and 2 illustrate a two- port device, an amplifier, but can be extended to any circuit having various number and types of ports. Examples are frequency' converters (mixers), power amplifiers, LNAs (Low Noise Amplifiers), signal sources (frequency multipliers) and different combinations of these components etc.
The waveguide structure comprises a waveguide split block assembly comprising' a first waveguide block portion 10, in the shown embodiment comprising a bottom.waveguide block portion with a firstwaveguide part 15A comprising a channel forming the half of a first waveguide, and a second waveguide block portion 20, in the shown embodiment comprising a top waveguide block portion, with a channel forming a second waveguide part 15B, i.e. the other half, of said first waveguide. Channels or waveguide parts forming' a second waveguide are shown in Fig.2.
In Fig.1 the waveguide split block assembly is illustrated in anassembled, closed state.The waveguide split block assembly 10,20 comprises an E-plane splitblock assembly as opposed to an H-plane split block assembly. AnE-plane split block assembly comprises a waveguide formed from twosplit-blocks wherein, when the blocks are connected or assembled,a rectangular waveguide is formed, the split being along the broaddimension of the rectangular cross-section of the waveguide, i.e. the waveguide structure is cut along the electric plane.
H-plane split blocks suffer from the drawbacks of requiring a verygood mechanical contact between the blocks in order not to prevent a current to flow.
According to the invention these drawbacks can be avoided by usingan E-plane split block. In an E-plane split block, no current flows along the plane where the waveguide is split.
Although in the illustrated embodiment the first block portion is taken to be a bottom block portion, it should be clear that, in alternative embodiments, the split block portion disposition may be different, e.g. reverted, or the blocks may comprise two blocks disposed and formed in any other appropriate way.
Fig.2 shows the waveguide split block assembly in an open, non- assembled, or partly assembled, state. In one of the block portions, here the bottom block portion 10, an active MMIC 30 is provided, the circuitry itself not being illustrated, since the invention is not limited to any specific circuitry, and supporting electronics also not being shown for reasons of clarity, and since it does not form part of the inventive concept. The bottom block portion 10 is adapted to receive said MMIC 30, and comprises a receiving cavity 31 (see Fig.3). In alternative embodiments the MMIC 30 is mounted onto the bottom block portion 10 in any other appropriate way, e.g. by welding, gluing or similar. It should also be clear that the circuit does not have to be an MMIC; it may also be any other active (or passive) circuit or circuits. The MMIC 30, or, more generally, the circuit may be of any appropriate, arbitrary size.
Probes comprising one or several waveguide-to-microstrip transitions 11,12 are integrated onto (here) the MMIC 30 at locations corresponding to respective inner ends of first waveguide part (channel) 15A of a first waveguide and of a first waveguide part (channel) 16A of a second waveguide. It should be noted that the waveguides can be arranged in many different ways, and in alternative embodiments there may be one, two, three or more waveguides, and hence one or more ports. Probes as disclosed in Figs. 2, 4,4A,6 comprising waveguide-to-microstrip transitions may thus be arranged in any desired number, one or more, and at any position(s) to form a transition between a waveguide and a circuit arrangement.
The second, input and/or output, waveguide is correspondingly formed by a first waveguide part (channel) 16A provided in the bottom waveguide block portion 10 and a second waveguide part (channel) 16B provided in said second waveguide block portion 20.
The second waveguide block portion 20, here a top waveguide block portion, comprises a waveguide and/or cavity' mode propagation blocking arrangement 22 (in the following denoted. a blocking arrangement), which e.g. is arranged in a blocking arrangement recess 21 or similar, provided at a location corresponding to thelocation in the first waveguide block 10 adapted for reception of the MMIC 30, i.e. such as to be disposed opposite to the MMIC 30 in a mounted state (cf. Fig.1) of the high frequency package 100.
The blocking arrangement 22 comprises a high impedance surface comprising a periodic or quasi-periodic structure e.g. formed by a plurality of nætallic pins 23 extending substantially perpendicularly to a bottom surface in said blocking arrangement recess 21 or similar, forming said high impedance surface, e.g. a corrugated surface, and arranged to face the MMIC 30. By means of the high impedance surface, e.g. the periodic or quasi-periodic structure, of said blocking arrangement 22, waveguide modes are blocked from leaking into the MMIC cavity from the waveguides.Thus no power in a form of a waveguide mode can propagate between the waveguide and the circuit cavity.
The presence of the waveguide modes are blocked through the use of said blocking arrangement 22, comprising the high impedance surface such as e.g. a periodic or quasi-periodic structure by means of removing, preventing the existence of, the E-field perpendicularly to the surface. This means among other things thatbond wires do not have to be used at high RF-frequencies, and theRF performance of the circuit and. the yield. are considerably enhanced.
It thus becomes possible to avoid, eliminate, propagation into thecircuit arrangement, here the active MMIC, of all other modes than a specifically desired. mode, which is extremely advantageous since, as a rule, only one specific mode is generally wanted.
Thus, by means of the blocking arrangement 22 comprising a high impedance surface e.g. comprising a periodic or quasi-periodic structure formed by metallic pins or similar, leakage between the waveguide and the circuit arrangement, here the MMIC, can actually be prevented, all undesired waveguide modes actually being suppressed, which is extremely advantageous, and completely different from so far known solutions used in different contextsand in which are aimed at absorbing undesired leaking waveguide modes.
The blocking arrangement 22, the high. impedance surface, the periodic or quasi-periodic structure, may be provided for in manydifferent manners and comprise different arrangements as will be further discussed below with reference to Figs. 5,5A.
Instead of having separate transitions on a substrate for connecting an (active circuit) to a waveguide, probes 11,12 are itself, hence said 11,12, integrated onto the circuit 30 forming waveguide-to-microstrip transitions which is extremely advantageous as discussed above.
Fig.3 is an enlarged view of the first waveguide block portion 10comprising a bottom waveguide block portion with a first waveguidepart 15A of a first waveguide and first waveguide part 16A of asecond waveguide. The first waveguide parts or channels 15A,16Aextend from, on opposite outer edges with respect to one anotherdisplaced positions of the bottom waveguide block portion 10, tolocations at diagonally' displaced. outer edges of a receivingportion 31 adapted for reception of a circuit, e.g. an active MMIC, such as to (here) each correspond to a diagonally opposite position l0 ll of an outer edge of such a circuit (not shown in Fig.3) where the transition waveguide-to-microstrip will be located.
Fig.4 is an enlarged view of the first waveguide block portion l0 comprising a bottom waveguide block portion with the first waveguide part l5A of the first waveguide and the first waveguidepart l6A of the second waveguide with an active MMIC 30 mounted in the receiving portion 3l (see Fig.3). In positions at outer edges of the MMIC 30 probes are integrated comprising said waveguide- to-microstrip transitions ll,l2, or other types of planar transitions, for example a coplanar waveguide.
Fig.4A is an enlarged view of the section indicated A in Fig. 4 for* the [purposes of 1nore clearly' illustrating za waveguide-to- microstrip transition l2 comprising a probe integrated onto the MMIC.
Fig.5 is an enlarged view of the second waveguide block portion 20 comprising a top waveguide block portion with a second waveguide part l5B of a first waveguide and second waveguide part l6B of a second waveguide leading from, here, on opposite outer edges with respect to one another displaced positions of the top waveguide block portion 20, to locations, or positions, at outer edges of a blocking arrangement receiving cavity 21 adapted for reception of a blocking arrangement, or arranged to comprise a blocking arrangement 22, such as to each correspond to the corresponding positions in the first waveguide block portion lO where the respective corresponding first waveguide parts l5A,l6A end, and where the of the outer edges of an active circuit to be received therein, are located, i.e. at the positions of the waveguide-to- microstrip transitions ll,l2 (see Figs.2,4,4A). 12 The blocking arrangement 22 here comprises a high impedance surfacecomprising a periodic structure comprising a plurality of metallic pins 23 disposed in parallel. The pins 23 here have a square- shaped cross-section and protrude perpendicularly with respect to a plane parallel with a planar outer surface of the second waveguide block portion 20 adapted to, in a mounted state of the high (RF) frequency package 100 (cf.Fig.1), be disposed on a planar outer surface of the first waveguide block portion carrying the active circuit. In an advantageous embodiment the width W, the cross-sectional dimension, of the square shaped pins 23 is about 0.15Å, Å being the wavelength of the centre frequency, and the height H of the pins is about Å/4, i.e. about a quarter wavelength (cf. Fig.4A).
The high impedance surface, particularly the periodic or quasi- periodic structure, here comprising pins 23, may be provided for in many different manners. In one embodiment pins are glued onto a surface in a blocking arrangement recess 21. Alternatively pins may be welded onto such a surface, or in the bottom of a receiving recess in the waveguide block portion 20. Still further a high impedance surface may be provided through milling and comprise pins, ridges, corrugations or other similar elements forming a periodic or quasi-periodic structure. The pins or similar may of course also have other cross-sectional shapes; rectangular, circular etc. Also the dimensions are of course not limited to theexemplifying figures indicated for exemplary reasons above but mayvary, e.g. as discussed below. The high impedance surface, or theperiodic, or quasi-periodic structure, here formed by the pins 23,prevents propagation of any undesired waveguide modes into theMMIC (cavity) and hence prevents the existence of any cavity modes in the circuit cavity. The width, or cross-sectional dimension/the lO l3 height of the pins, corrugations or other elements of any appropriate kind, is determined by the desired signal frequency band. The higher the frequency band, the smaller the dimensions, and the dimensions scale linearly with the wavelength; the higher the frequency, the smaller the wavelength Å, and the smaller the dimensions. It should be clear that, for a frequency band, Å is the wavelength of the centre frequency of the corresponding frequency band.
Fig.5A is an enlarged view of the section indicated B in Fig. 5for the purposes of more clearly illustrating an example of ablocking arrangement 22 comprising a periodic structure formed by pins 23.
The blocking arrangement 22 comprising a high impedance surface inone embodiment comprises an array of pins 23 with a cross sectionhaving the dimensions of about O.lÅ -O.2Å,and a height H of O.l5Ä -O.3Å, in e.g. in advantageousembodiments about O.l5Å x O.l5Å,Particularly O.4Å, particularly advantageous embodiments about O.25Å. the period is between approximately O.25Å and most particularly about O.3Å.
In another exemplary embodiment the blocking arrangement comprisesa high impedance surface, a periodic structure comprising a numberof square shaped pins with the cross-sectional area dimension of(0.lÅ -O.2Å)2, (O.l5Å)2 and a height of O.l5Å-O.3Å, particularly about in particularly advantageous embodiments about O.25Å.
In still other alternative embodiments the high impedance surface,a periodic or quasi-periodic structure, may comprise a plurality of concentrically disposed corrugations with grooves. 14 It should be clear that a high impedance surface, a periodic or aquasi-periodic structure, may also be provided through differentlydisposed corrugations in still other embodiments.
The distance between the top of the high impedance surface, e.g.the top of the pin surface, and the ground plane of the circuitarrangement should be less than Å/4. also Since the high impedance surface, the periodic structure, denoted texture, is so designed that it stops propagation of wavesover a specific frequency band for which it is designed, the shapeand dimensions and the arrangement of e.g. pins, posts, grooves,ridges etc. of the periodic structure are selected correspondingly as discussed above.
The non-propagating or non-leaking characteristics between two with a periodic texture Kildal, E. surfaces of which one is provided (structure), is known from. P.-S. Alfonso, A. e.g.
Valero-Nogueira, E. Rajo-Iglesias, “Local metamaterial-based IEEE Antennas84-87, waveguides in gaps between parallel metal plates”, and Wireless Propagation letters (AWPL), Volume 8, pp.2009. The non-propagating characteristic appears within a specificfrequency band, referred to as a stopband. It is also known thatof periodic Kildal, such stopbands can be provided by other types structures, as described in E. Rajo-Iglesias, P.-S."Numerical studies of bandwidth of parallel plate cut-off realizedby bed of nails, corrugations and mushroom-type EBG for use in gapwaveguides", pp. 282-289, IET Microwaves, Antennas & Propagation, Vol. 5, No 3¿ March 2011. These stopband characteristics are also used to form so called gap waveguides as described in WO/2010/003808.
Any of the described periodic or quasi-periodic textures can alsobe used in the high frequency package of the present invention.Thus, according to the invention, by using a blocking arrangement comprising a high impedance surface or a periodic or quasi-periodic structure, undesired waveguide modes can be efficientlysuppressed.Fig. 6 schematically illustrates another embodiment of a high (RF) frequency package 100' comprising a circuit arrangement, e.g. an MMIC, arranged in a waveguide structure.The high frequency' package 100' here for example comprises a frequency multiplier.
The waveguide structure comprises a waveguide split block assemblycomprising a first waveguide block portion 10', comprising a bottomwaveguide block portion with a first waveguide part 15A' comprisinga channel forming the half of a waveguide here serving as an outputwaveguide, for an output signal, and a second waveguide blockportion 20' comprising a top waveguide block portion with a channelforming a second waveguide part 15B', i.e. the other half of saidoutput waveguide. ZX probe comprising za waveguide-to-microstriptransition or other type of waveguide-to-planar transition 11' isintegrated onto the MMIC 30' as also discussed above. Further, thewaveguide split block assembly 10,20 comprises an E-plane splitblock assembly, and in the bottom block portion 10' a circuit 30'is provided as also discussed with reference to the embodiment described with reference to Figs.1,2 above. 16 In this embodiment, however, a coax port 161' serves as input for an input signal, an input frequency, which hence is fed through a coaxial cable, or alternatively another waveguide.
The second waveguide block portion 20', here a top waveguide block portion, comprises a waveguide mode propagation blocking arrangement 22' as discussed with reference to Figs.2,5,5A above.Similar elements bear the same reference signs as in these Figures,but are provided with a prime sign, and will therefore not befurther described herein.
It should. be clear that the invention. is not limited. to thespecifically illustrated embodiments, but that it can be varied in a number of ways within the scope of the appended claims.
Particularly it is applicable for in principle any circuit of anarbitrary size, active or passive, that the high impedance surface, the periodic or quasi-periodic structure, can be provided for in many different manners, comprising different shapes and sizes of elements, distances between, periods etc. and being made of different materials, and it is not limited to any specific frequencies. Also, the invention is not limited to MMICs, but it is applicable to circuits, e.g. also hybrid circuits, in general, and is also intended to cover other (active or passive) circuits.It is also not limited to any particular number or type of ports,nor to the arrangement and positions of such ports, there may beone, two, three or more ports serving as input and/or output portsand comprising probes integrated onto the circuit as discussedabove. There may also be a combination of such ports and coax portsas exemplified through the embodiment shown in Fig.6. Further, the invention covers different types of planar transitions.
Claims (17)
1. A high frequency package arrangement comprising one or more circuitswaveguide structure in which said circuit arrangementwherein the waveguide structure comprises a split-block (10;10') and arranged,assembly comprising a first waveguide block portiona second waveguide block portion (20;20') and at least onewaveguide port, c h a r a c t e r i z e d i n that it comprises at least one probe integrated onto the circuit(30;30') comprising a waveguide-to-planar transition,(l1,l2;1l')(30;30') is(10;lO'), (22;22') arrangement e.g. a waveguide-to-microstrip transition, forming a waveguide interface, that said circuit arrangement provided in or on one of said waveguide block portionsand in that it further comprises a blocking arrangementprovided in the other waveguide block portion (20;20') and disposedsuch as to face the circuit arrangement (30;30') in an assembledor mounted state of the split-block assembly for preventing leakageinto the circuit of undesired modes (30;30'). waveguide arrangement
2. A high frequency package (100) according to claim 1,c h a r a c t e r i z e d i nthat the circuit arrangement (30;30') comprises an active circuit arrangement, one or more active MMICs, or a passive circuit e.g.arrangement.(100)
3. A high frequency package according to claim 1 or 2, c h a r a c t e r i z e d i n 18 that the waveguide split block assembly (10,20;10',20') comprises an E-plane split block assembly.
4. A high frequency package (100) according to claim 3, c h a r a c t e r i z e d i nthat the E-plane split block assembly comprises a first waveguide block portion (10;10') with at least one first waveguide part (15A,16A;15A') comprising aa channel forming aa half of aa first waveguide, and a second waveguide block portion (20;20') with at least one second waveguide part comprising a channel forming a second waveguide part (15B,16B;15B'), i.e. the other half, of said first waveguide.
5. A high frequency package (100) according to claim 4 c h a r a c t e r i z e d i n(10) that the first waveguide block portion comprises two or more first waveguide parts (15A,16A), each comprising a channel forming a half of a waveguide respectively, e.g. a first and a secondwaveguide respectively, and that the second waveguide blockportion (20) comprises two or more second waveguide parts(15B,16B), each comprising a channel forming a second half ofwaveguides, e.g. said first and said second waveguiderespectively.
6. A high frequency package (100;100') according to any one of thepreceding claims,c h a r a c t e r i z e d i n that the first waveguide block portion (10;10') comprises a bottom waveguide block portion and in that the second waveguide block(20;20') portion comprises a top waveguide block portion. 19
7. A high frequency package (100;100') according to any one ofclaims 1-5, c h a r a c t e r i z e d i n that the first waveguide block portion (10;10') is adapted toreceive the circuit arrangement (30;30'), e.g. comprising areceiving' recess (31) or* a receiving' region, and. in that the circuit arrangement (30;30') is mounted e.g. by means of welding, gluing or similar onto or in the first waveguide block portion (10;10').
8. A high frequency package (100;100') according to any one of the preceding claims,c h a r a c t e r i z e d i n that the second waveguide block portion (20;20') is adapted to comprise the blocking arrangement (22;22'), that said blocking arrangement (22;22') comprises a high impedance surface e.g. comprising a periodic or a quasi-periodic structure arranged suchthat, in a mounted, assembled, state of the high frequency package,surface or periodic or a quasi-periodic (30;30'), said high impedance structure faces the circuit arrangement said blocking(22;22') blocking, preventing, all undesired waveguide (30;30') arrangementmode from leaking into the circuit arrangement or thecircuit arrangement cavity.
9. A high frequency package (100;100') according to claim 8,c h a r a c t e r i z e d i n that the high impedance surface or periodic or the quasi-periodic(22;22') structure of the blocking arrangement comprises a plurality of pins or similar (23;23') having a square-shaped cross-section.
10. A high frequency package (100;100') according to claim 9,c h a r a c t e r i z e d i nthat the pins (23;23') have a cross-sectional dimension of approximately between O.1ÅxO.1A and O.2AxO.2A, preferably about O.15AxO.15A, A being the wavelength of the centre frequency of thethat they have a height of corresponding waveguide, and in approximately between O.15Å and O.35A, preferably about O.25Å.
11. A high frequency package (100;100') according to any one ofclaims 1-7,c h a r a c t e r i z e d i n that the high impedance surface comprises a plurality of pinshaving a circular cross-section with a height of approximatelyO.15A. and O.35Å, preferably' about O.25A, between A. being the wavelength of the centre frequency of the corresponding waveguide.
12. A high frequency package (100;100') at least according to claim8, c h a r a c t e r i z e d i n that the high impedance surface is located at a distance from a(30;30') ground plane of the circuit arrangement which is smaller than A/4, A being the wavelength of the centre frequency of the corresponding waveguide.
13. A high frequency package (100;100') according to any one ofthe preceding claims, c h a r a c t e r i z e d i n that the high. impedance surface, e.g. the periodic or quasi-periodic structure, of the blocking arrangement (22;22') comprises pins (23;23'), corrugations or similar having dimensions adapted 21 for a specific frequency band, with a period of approximately between O.25A and O.4A, preferably of about O.3A.
14. A high frequency package (100;100') according to any one ofthe preceding claims, c h a r a c t e r i z e d i n that the circuit arrangement (30;30') comprises an active or passive circuit arrangement of any appropriate, arbitrary size, e.g. a hybrid circuit.
15. A high frequency package (100;100') according to any one ofthe preceding claims, c h a r a c t e r i z e d i n that the circuit arrangement (30;30') comprises an active MMIC comprising an LNA, a power amplifier, a multiplier, a mixer, a signal source, or one or more of any one thereof in any combination.
16. A high frequency package (100;100') according to any one of the preceding claims, c h a r a c t e r i z e d i n that it is adapted for high RF-frequency signals.
17. A method for providing a high frequency package (100;100'), comprising the steps of: - providing a circuit arrangement (30;30') in a waveguidestructure comprising a split-block assembly comprising a (10) first waveguide block portion and a second waveguide block portion (20) and comprising at least one waveguideport;c h a r a c t e r i z e d i n that the method further comprises the steps of: lO 22 integrating at least one probe integrated onto the circuit arrangement (30;30') forming a waveguide-to-planartransition, e.g. a. waveguide-to-microstrip transition,(ll,l2;ll'); providing the circuit arrangement (30;30') in or on one ofsaid waveguide block portions (lO;lO'); providing the other waveguide block portion (20;20') with ablocking arrangement (22;22') for preventing leakage ofundesired waveguide modes into the circuit arrangement(30;30') in an assembled or mounted state of the split-blockassembly; assembling the split-block assembly by arranging the firstand second waveguide block portions (lO,20;lO',20') so withrespect to one another that the blocking arrangement (22;22') will face the circuit arrangement (30;30').
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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SE1551226A SE1551226A1 (en) | 2015-09-24 | 2015-09-24 | A high frequency package and a method relating thereto |
PCT/SE2016/050821 WO2017052441A1 (en) | 2015-09-24 | 2016-09-01 | A high frequency package and a method relating thereto |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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SE1551226A SE1551226A1 (en) | 2015-09-24 | 2015-09-24 | A high frequency package and a method relating thereto |
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SE1551226A SE1551226A1 (en) | 2015-09-24 | 2015-09-24 | A high frequency package and a method relating thereto |
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WO (1) | WO2017052441A1 (en) |
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CN107342459B (en) * | 2017-07-05 | 2020-07-28 | 电子科技大学 | Transition probe structure of thin-film microstrip antenna |
ES2886940T3 (en) | 2017-09-25 | 2021-12-21 | Gapwaves Ab | Phased antenna array |
EP3621146B1 (en) | 2018-09-04 | 2023-10-11 | Gapwaves AB | High frequency filter and phased array antenna comprising such a high frequency filter |
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DE3217945A1 (en) * | 1982-05-13 | 1984-02-02 | ANT Nachrichtentechnik GmbH, 7150 Backnang | TRANSITION FROM A WAVE LADDER TO A MICROSTRIP LINE |
BRPI0914914B1 (en) | 2008-07-07 | 2021-12-14 | Gapwaves Ab | MICROWAVE DEVICE |
JP5921586B2 (en) * | 2014-02-07 | 2016-05-24 | 株式会社東芝 | Millimeter-wave band semiconductor package and millimeter-wave band semiconductor device |
-
2015
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